CN216067498U - Novel manipulator for testing metal content of back of large-diameter silicon wafer - Google Patents
Novel manipulator for testing metal content of back of large-diameter silicon wafer Download PDFInfo
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- CN216067498U CN216067498U CN202120047014.4U CN202120047014U CN216067498U CN 216067498 U CN216067498 U CN 216067498U CN 202120047014 U CN202120047014 U CN 202120047014U CN 216067498 U CN216067498 U CN 216067498U
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- silicon wafer
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- manipulator body
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 88
- 239000010703 silicon Substances 0.000 title claims abstract description 88
- 239000002184 metal Substances 0.000 title claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 34
- 238000012360 testing method Methods 0.000 title claims abstract description 26
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 238000001179 sorption measurement Methods 0.000 claims abstract description 9
- 230000007306 turnover Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 20
- 239000007788 liquid Substances 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 52
- 239000007789 gas Substances 0.000 description 17
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004154 testing of material Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Sampling And Sample Adjustment (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model provides a novel manipulator for testing metal content on the back of a large-diameter silicon wafer, which comprises: a manipulator body; the overturning device is arranged on the manipulator body and controls the manipulator to overturn; the cleaning device is arranged on the manipulator body and used for cleaning the manipulator body; and the adsorption device is arranged on the manipulator body and used for adsorbing the silicon wafer. The method has the beneficial effects of effectively solving the problems that external impurities are inevitably introduced in the existing method, particularly, the back of the silicon wafer is directly contacted in the overturning process, the scanning liquid can not completely sweep the whole silicon wafer, and metal ions can be introduced into the silicon wafer in the environment, personnel and operation processes, so that the silicon wafer is polluted, and the measurement result is inaccurate.
Description
Technical Field
The utility model belongs to the field of semiconductor material testing, and particularly relates to a novel manipulator for testing metal content on the back of a large-diameter silicon wafer.
Background
In the development of integrated circuits, as the geometric dimension of unit patterns is reduced, the influence of pollutants on devices is more and more prominent, and in the production process of semiconductors, the performances of diodes and transistors are deteriorated due to the pollution of metal ions on the surface of a silicon wafer, and particularly under high temperature or electric field, the metal ions can diffuse into the body of the semiconductor or expand and distribute on the surface of the semiconductor, so that the performances of the devices are reduced, the yield is reduced, and even the whole devices can be completely failed. Therefore, analyzing and testing the content of metal ions on the surface of the silicon wafer is crucial to monitoring the cleanliness of the surface of the silicon wafer.
At present, most of researches on metal pollution of semiconductor silicon wafers are to test the content of metal impurities on the front sides of the silicon wafers so as to ensure the cleanliness of the front sides of the silicon wafers in the processing process, influence of metal on the back sides of the silicon wafers on the production process of semiconductor devices is easily ignored, and the yield of produced products is also influenced by too much metal impurities on the back sides of the silicon wafers, so that the method is also important for monitoring the metal on the back sides of the silicon wafers.
In the metal test of the back of the silicon wafer, most of the silicon wafers are pretreated by using manual chemical vapor deposition (VPD) and have the size of 8 inches or less, namely, an operator uses a vacuum suction pen to suck the front of the silicon wafer, a drop of scanning liquid is dripped on the back of the silicon wafer after the silicon wafer is turned over, the scanning liquid is sucked into ICP-MS for testing by using a liquid taking gun after the scanning liquid sweeps the whole silicon wafer by inclining the silicon wafer, external impurities are inevitably introduced by the method, particularly, the back of the silicon wafer can be directly contacted in the turning process, and the situation that the scanning liquid cannot completely sweep the whole silicon wafer can possibly occur, so that the test result is influenced. For the 12-inch silicon wafer, due to the fact that the surface area of the silicon wafer is larger, metal ions are more likely to be introduced into the silicon wafer in the manual VPD process and are more likely to be contaminated in the environment, personnel and operation process compared with the silicon wafer of 8 inches or below, and in addition, the manual VPD cannot scan the whole silicon wafer to the same extent, and therefore ideal test results cannot be obtained.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the problem that the existing method inevitably introduces external impurities, particularly the scanning liquid can not completely sweep the whole silicon wafer due to the fact that the back of the large-diameter silicon wafer is directly contacted in the overturning process, and the silicon wafer can possibly introduce metal ions in the environment, personnel and operation processes, so that the silicon wafer is polluted, and the measurement result is inaccurate.
In order to solve the technical problems, the utility model adopts the technical scheme that: a novel manipulator for testing metal content of the back of a large-diameter silicon wafer comprises: a manipulator body; the overturning device is arranged on the manipulator body and controls the manipulator to overturn; the cleaning device is arranged on the manipulator body and used for cleaning the manipulator body; and the adsorption device is arranged on the manipulator body and used for adsorbing the silicon wafer.
Preferably, the turnover device comprises a rotating shaft, and the rotating shaft is arranged at one end of the manipulator body and controls the manipulator body to rotate.
Preferably, the turnover device further comprises a rotating motor, which is arranged at one end of the rotating shaft and controls the rotating shaft to rotate.
Preferably, the manipulator body is internally provided with a hollow structure for gas to pass through.
Preferably, the cleaning device includes an air injection hole provided on the robot body.
Preferably, the adsorption device comprises a sucker which is arranged at the front end of the manipulator body and adsorbs the silicon wafer.
Due to the design of the turnover device, the manipulator can turn over at any angle at any time to cooperate with a machine to detect the metal content on the back of the silicon wafer; due to the design of the adsorption device, when the manipulator grabs and overturns the silicon wafer, the manipulator cannot directly contact the back of the silicon wafer, so that the influence of manpower and environment is reduced, and the test result of the metal content is more accurate; due to the design of the cleaning device, after the last silicon wafer is detected, the manipulator is cleaned by once purging, the detection result of the metal content of the silicon wafer is prevented from being influenced by some metals and other impurities on the manipulator, and the use of the manipulator is not influenced because the thickness of the manipulator is not changed; because a novel manipulator for testing metal content on the back of a large-diameter silicon wafer, external impurities are inevitably introduced by the existing method, particularly, the silicon wafer back can be directly contacted in the overturning process, the situation that scanning liquid cannot completely sweep the whole silicon wafer can occur, metal ions can be introduced into the silicon wafer in the environment, personnel and operation processes, the problem that the measurement result is inaccurate due to contamination of the silicon wafer occurs, and the metal content on the back of the silicon wafer can be measured more conveniently, rapidly and accurately.
Drawings
FIG. 1 is a schematic diagram of a front structure of a novel manipulator for testing metal content on the back of a large-diameter silicon wafer according to an embodiment of the present invention
FIG. 2 is a schematic view of a cross-sectional structure of a novel manipulator for testing metal content on the back surface of a large-diameter silicon wafer according to an embodiment of the present invention
In the figure:
1. manipulator body 2, sucking disc 3, fumarole
4. Rotating shaft 5 and gas pipe
Detailed Description
The utility model is further illustrated by the following examples and figures:
in the description of the embodiments of the present invention, it should be understood that the terms "top," "bottom," and the like refer to orientations and positional relationships illustrated in the drawings, which are used for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present invention. In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "disposed" and "connected" are to be interpreted broadly, e.g., as a fixed connection, a detachable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
In an embodiment of the present invention, as shown in fig. 1, a schematic diagram of a front structure of a novel manipulator for testing metal content of a back surface of a large-diameter silicon wafer, and fig. 2, a schematic diagram of a cross-sectional structure of a novel manipulator for testing metal content of a back surface of a large-diameter silicon wafer, a novel manipulator for testing metal content of a back surface of a large-diameter silicon wafer includes: the manipulator body 1 is made of ceramic materials, and in order to reduce the use of production materials and ensure that gas smoothly reaches the gas injection holes 3, the manipulator body 1 is of an internal hollow structure, so that the production cost is saved, and the use of materials is reduced; the overturning device is arranged on the manipulator body 1 and controls the manipulator to overturn; the cleaning device is arranged on the manipulator body 1 and used for cleaning the manipulator body 1; and the adsorption device is arranged on the manipulator body 1 and used for adsorbing the silicon wafer.
Specifically, turning device includes axis of rotation 4 and rotating electrical machines, and the rear end at manipulator body 1 is connected to the one end of axis of rotation 4, and control manipulator body 1 is rotatory, and the angle that rotation angle used as required is decided, and when measuring the metal content at the silicon chip back, the manipulator adsorbs the front of silicon chip, and the 4 upsets 180 of axis of rotation of controlling again send the back of silicon chip upwards into and measure metal content in the machine. The rotating electrical machines is connected at the other end of axis of rotation 4, for axis of rotation 4 drives the rotatory power that provides of manipulator body 1, starts the rotating electrical machines, and the rotating electrical machines drives axis of rotation 4 and rotates, and axis of rotation 4 drives manipulator body 1 and rotates, and the angle that rotatory angle used as required is decided.
Cleaning device includes fumarole 3, and even setting is at the front end surface of manipulator body 1, and gas can be nitrogen gas or other inert gas, reaches fumarole 3 departments in the hollow structure through manipulator body 1 inside, through 3 blowout of fumarole, sweeps manipulator body 1 totally, accomplishes cleaning work. Compared with other cleaning methods, the purging cleaning method can save more time, the thickness of the mechanical hand body 1 is unchanged, and the influence on the use of the mechanical hand is reduced.
Adsorption equipment includes sucking disc 2, and the number is 2, bonds at manipulator body 1 foremost, adsorbs the silicon chip, when the manipulator upset, guarantees that the silicon chip can not drop, still does not contact the silicon chip back that will detect simultaneously for the testing result is more accurate.
When the silicon chip detects the metal content on the back side, the rotating motor controls the rotating shaft 4 to rotate 180 degrees, the rotating shaft 4 drives the mechanical hand body 1 to overturn 180 degrees and then grab the front side of the silicon chip, the front side of the silicon chip is adsorbed by the sucking disc 2 at the front end, the silicon chip is overturned by 180 degrees again, the back side of the silicon chip faces upwards, the mechanical hand does not contact with the back side of the silicon chip in the process, then the mechanical hand carries out pretreatment on the silicon chip by sending the silicon chip into the VPD cavity, the back side of the silicon chip is a treatment side at the moment, the mechanical hand automatically takes out the silicon chip and tests the silicon chip after the treatment is finished, the scanning liquid scans the back side of the silicon chip to enable the metal on the back side to be enriched in the scanning liquid, and ICP-MS (inductively coupled plasma mass spectrometer) is used for element analysis, so that the content of metal impurities on the back side of the silicon chip is obtained. After the metal content of the back of a silicon wafer is tested, the manipulator starts to clean, the gas injection holes 3 start to work, gas is sprayed out from the gas injection holes 3 to purge dust on the manipulator body 1, and after purging is finished, the detection work of the next silicon wafer is directly carried out, so that the drying time of water cleaning is saved. The above process is repeated, and the work of detecting the metal content on the back of the silicon wafer is quickly, conveniently and accurately completed.
In another embodiment of the present invention, the gas transmission pipes 5 are added into the hollow structure of the manipulator body 1, the number of the gas transmission pipes 5 is determined according to the number of the rows of the gas injection holes 3, and the position of each gas transmission pipe 5 corresponding to the gas injection hole 3 is provided with a gas outlet, so that the gas injection pressure can be increased, gas leakage when gas injection is not needed can be avoided, the use of inert gas can be saved, and the production cost can be saved.
The adsorption device can be vacuum chuck 2, and the number is 2, and the welding is at the foremost end of manipulator body 1, adsorbs the silicon chip, when the manipulator upset, guarantees that the silicon chip can not drop, and the silicon chip back that still contactless will detect simultaneously for the testing result is more accurate.
Although the embodiments of the present invention have been described in detail, the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (5)
1. A novel manipulator for testing metal content of the back of a large-diameter silicon wafer comprises:
a manipulator body;
the overturning device is arranged on the manipulator body and controls the manipulator to overturn;
the cleaning device is arranged on the manipulator body and used for cleaning the manipulator body;
the adsorption device is arranged on the manipulator body and adsorbs the silicon wafer;
wherein, cleaning device includes the fumarole, sets up on the manipulator body.
2. The novel mechanical arm for testing the metal content of the back surface of the large-diameter silicon wafer as claimed in claim 1, is characterized in that: the turnover device comprises a rotating shaft, is arranged at one end of the manipulator body and controls the manipulator body to rotate.
3. The novel mechanical arm for testing the metal content of the back surface of the large-diameter silicon wafer as claimed in claim 2, is characterized in that: the turnover device further comprises a rotating motor which is arranged at one end of the rotating shaft and used for controlling the rotating shaft to rotate.
4. The novel mechanical arm for testing the metal content of the back surface of the large-diameter silicon wafer as claimed in claim 1, is characterized in that: the manipulator body is internally provided with a hollow structure for gas to pass through.
5. The novel mechanical arm for testing the metal content of the back surface of the large-diameter silicon wafer as claimed in claim 1, is characterized in that: the adsorption device comprises a sucker which is arranged at the front end of the manipulator body and used for adsorbing the silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120047014.4U CN216067498U (en) | 2021-01-08 | 2021-01-08 | Novel manipulator for testing metal content of back of large-diameter silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120047014.4U CN216067498U (en) | 2021-01-08 | 2021-01-08 | Novel manipulator for testing metal content of back of large-diameter silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216067498U true CN216067498U (en) | 2022-03-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120047014.4U Active CN216067498U (en) | 2021-01-08 | 2021-01-08 | Novel manipulator for testing metal content of back of large-diameter silicon wafer |
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| CN (1) | CN216067498U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116344434A (en) * | 2023-05-11 | 2023-06-27 | 广东鸿浩半导体设备有限公司 | Rapid dust removal and transfer method after laser de-bonding and sheet taking manipulator |
-
2021
- 2021-01-08 CN CN202120047014.4U patent/CN216067498U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116344434A (en) * | 2023-05-11 | 2023-06-27 | 广东鸿浩半导体设备有限公司 | Rapid dust removal and transfer method after laser de-bonding and sheet taking manipulator |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: No.12 Haitai East Road, Huayuan Industrial Zone, Binhai New Area, Tianjin Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |
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| CP03 | Change of name, title or address |