TWI834456B - Grinding wheels, grinding equipment and silicon wafers - Google Patents
Grinding wheels, grinding equipment and silicon wafers Download PDFInfo
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- TWI834456B TWI834456B TW111150615A TW111150615A TWI834456B TW I834456 B TWI834456 B TW I834456B TW 111150615 A TW111150615 A TW 111150615A TW 111150615 A TW111150615 A TW 111150615A TW I834456 B TWI834456 B TW I834456B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 84
- 239000010703 silicon Substances 0.000 title claims abstract description 84
- 235000012431 wafers Nutrition 0.000 title claims abstract description 61
- 206010006514 bruxism Diseases 0.000 claims abstract description 88
- 239000012530 fluid Substances 0.000 claims description 51
- 230000003068 static effect Effects 0.000 claims description 22
- 238000001514 detection method Methods 0.000 claims description 10
- 230000002706 hydrostatic effect Effects 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000007767 bonding agent Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
本發明實施例公開了研磨輪、研磨設備及矽片,該研磨輪包括:具有中心軸線的基座;沿周向方向分佈在該基座的與該中心軸線垂直的一個表面上並且從該表面伸出的多個研磨齒,該多個研磨齒設置成能夠與該基座一起繞該基座的中心軸線旋轉,以通過每個研磨齒的末端對矽片的處於目標平面中的表面進行研磨;驅動模組,該驅動模組設置成:當該基座的中心軸線不與該目標平面垂直時,該驅動模組使每個研磨齒沿該中心軸線移動,以使得每個研磨齒的末端總是處於該目標平面中。Embodiments of the present invention disclose a grinding wheel, grinding equipment and silicon wafers. The grinding wheel includes: a base with a central axis; distributed along a circumferential direction on a surface of the base perpendicular to the central axis and from the surface A plurality of protruding grinding teeth, the plurality of grinding teeth are arranged to be able to rotate together with the base around the central axis of the base to grind the surface of the silicon wafer in the target plane through the end of each grinding tooth ; Driving module, the driving module is configured to: when the central axis of the base is not perpendicular to the target plane, the driving module moves each grinding tooth along the central axis so that the end of each grinding tooth Always in this target plane.
Description
本發明關於半導體製造技術領域,尤其屬於研磨輪、研磨設備及矽片。The present invention relates to the technical field of semiconductor manufacturing, and particularly belongs to grinding wheels, grinding equipment and silicon wafers.
半導體矽片的生產技術通常包括拉晶、線切割、研磨、拋光等處理過程。雙面研磨作為一種研磨技術用於同時對矽片的兩個主表面進行研磨以使矽片具有高度平整表面。在雙面研磨過程中,需要使用專用裝置來保持矽片,以便於研磨輪對矽片的兩個主表面同時進行研磨。通常,這種保持裝置包括對向設置的一對流體靜壓支撐件,矽片沿豎向方向設置在兩個流體靜壓支撐件之間,流體靜壓支撐件可以在其自身與矽片的主表面之間形成流體屏障,以便使矽片能夠在不與兩個流體靜壓支撐件相接觸的情況下被保持豎立,與此同時,可以利用對置的研磨輪對矽片的兩個主表面進行研磨。相比於實體夾持,流體靜壓支撐件的流體夾持方式減少了對矽片的損傷,並使得矽片以較小的摩擦相對於流體靜壓支撐件表面在切向上移動(轉動)。The production technology of semiconductor silicon wafers usually includes processes such as crystal pulling, wire cutting, grinding, and polishing. Double-sided grinding is a grinding technology used to grind the two main surfaces of a silicon wafer simultaneously to make the silicon wafer have a highly flat surface. During the double-sided grinding process, a special device is required to hold the silicon wafer so that the grinding wheel can grind both main surfaces of the silicon wafer simultaneously. Usually, this holding device includes a pair of hydrostatic supports arranged oppositely, and the silicon chip is arranged between the two hydrostatic supports in the vertical direction. The hydrostatic support can be between itself and the silicon chip. A fluid barrier is formed between the main surfaces so that the silicon wafer can be held upright without contact with the two hydrostatic supports. At the same time, the two main surfaces of the silicon wafer can be polished using opposing grinding wheels. The surface is ground. Compared with physical clamping, the fluid clamping method of the hydrostatic support reduces damage to the silicon sheet and allows the silicon sheet to move (rotate) in the tangential direction relative to the surface of the hydrostatic support with less friction.
然而,對於上述雙面研磨技術而言,隨著設備的連續操作及研磨水的持續供應,研磨室溫度會不斷發生變化,導致金屬磨床的床體發生一定的形變,由於左、右研磨輪通過支撐桿固定在磨床上,一旦磨床發生形變,將導致左、右研磨輪相對於矽片的接觸位置隨之發生變化,也就是說研磨位置發生了變化,當實際研磨位置沒有達到預期要求時,不僅會影響研磨效率,還可能降低研磨後的矽片的平坦度。However, for the above-mentioned double-sided grinding technology, with the continuous operation of the equipment and the continuous supply of grinding water, the temperature of the grinding chamber will continue to change, resulting in a certain deformation of the bed body of the metal grinder. As the left and right grinding wheels pass through The support rod is fixed on the grinder. Once the grinder deforms, the contact position of the left and right grinding wheels relative to the silicon chip will change accordingly. That is to say, the grinding position changes. When the actual grinding position does not meet the expected requirements, Not only will it affect the grinding efficiency, but it may also reduce the flatness of the ground silicon wafers.
因此,在雙面研磨過程中,即時調整研磨輪的研磨齒相對於矽片的位置關係,以確保左、右研磨輪持續保持在能夠實現較佳研磨效果的位置範圍內,對提升研磨效率和研磨效果而言非常重要。Therefore, during the double-sided grinding process, the position of the grinding teeth of the grinding wheel relative to the silicon wafer is adjusted immediately to ensure that the left and right grinding wheels continue to remain within the position range that can achieve better grinding effects, which is important for improving grinding efficiency and Very important for grinding effect.
有鑑於此,本發明實施例期望提供研磨輪、研磨設備及矽片,通過使用該研磨輪能夠調整研磨輪、特別是研磨輪的研磨齒相對於矽片的待研磨表面的位置,使得即使研磨輪因磨床的形變而發生位置變化,研磨輪的研磨齒仍持續保持在能夠實現較佳研磨效果的位置範圍內,從而保證研磨效率和研磨效果。In view of this, embodiments of the present invention are expected to provide a grinding wheel, a grinding equipment and a silicon wafer. By using the grinding wheel, the position of the grinding wheel, especially the grinding teeth of the grinding wheel, relative to the surface to be ground of the silicon wafer can be adjusted, so that even if the grinding The position of the wheel changes due to the deformation of the grinder, but the grinding teeth of the grinding wheel continue to remain within the position range that can achieve better grinding effects, thus ensuring grinding efficiency and grinding effect.
本發明的技術方案是這樣實現的: 第一方面,本發明實施例提供了一種研磨輪,該研磨輪包括: 具有中心軸線的基座; 沿周向方向分佈在該基座的與該中心軸線垂直的一個表面上並且從該表面伸出的多個研磨齒,該多個研磨齒設置成能夠與該基座一起繞該基座的中心軸線旋轉,以通過每個研磨齒的末端對矽片的處於目標平面中的表面進行研磨; 驅動模組,該驅動模組設置成:當該基座的中心軸線不與該目標平面垂直時,該驅動模組使每個研磨齒沿該中心軸線移動,以使得每個研磨齒的末端總是處於該目標平面中。 The technical solution of the present invention is implemented as follows: In a first aspect, an embodiment of the present invention provides a grinding wheel, which includes: a base with a central axis; A plurality of grinding teeth distributed in a circumferential direction on a surface of the base perpendicular to the central axis and protruding from the surface, the plurality of grinding teeth being arranged to be able to circle the center of the base together with the base The axis is rotated to grind the surface of the silicon wafer in the target plane through the end of each grinding tooth; The driving module is configured to: when the central axis of the base is not perpendicular to the target plane, the driving module moves each grinding tooth along the central axis so that the end of each grinding tooth always is in the target plane.
第二方面,本發明實施例提供了一種研磨設備,該研磨設備用於對矽片進行雙面研磨,該研磨設備包括: 對向設置在矽片的兩側的兩個靜壓支撐件,該兩個靜壓支撐件用於通過提供流體靜壓以非接觸的方式支撐矽片; 對向設置在該矽片的兩側的兩個根據第一方面的研磨輪。 In a second aspect, embodiments of the present invention provide a grinding equipment for double-sided grinding of silicon wafers. The grinding equipment includes: Two static pressure supports disposed oppositely on both sides of the silicon chip, the two static pressure supports being used to support the silicon chip in a non-contact manner by providing hydrostatic pressure; Two grinding wheels according to the first aspect are disposed facing each other on both sides of the silicon chip.
第三方面,本發明實施例提供了一種矽片,該矽片通過使用根據第二方面的研磨設備獲得。In a third aspect, an embodiment of the present invention provides a silicon wafer obtained by using the grinding device according to the second aspect.
本發明實施例提供了研磨輪、研磨設備和矽片;該研磨輪包括驅動模組,該驅動模組設置成當該研磨輪的基座的中心軸線不與目標平面垂直時,該驅動模組使每個研磨齒沿該中心軸線移動,由此,如果研磨輪因受工作環境中的關聯部件或其他因素的影響發生位置偏移或偏轉而導致研磨輪、特別是研磨輪的研磨齒未達到預設研磨位置,則可以憑藉驅動模組使各個研磨齒沿中心軸線移動,即憑藉驅動模組調整各個研磨齒從基座伸出的長度,從而使各個研磨齒的末端總是處於目標平面中、即矽片的待研磨表面上,以始終同時對矽片的待研磨表面進行研磨,進而保證研磨效率和研磨效果,使研磨後的矽片表面具有較好的平坦度。Embodiments of the present invention provide a grinding wheel, a grinding equipment and a silicon wafer; the grinding wheel includes a driving module, and the driving module is configured such that when the central axis of the base of the grinding wheel is not perpendicular to the target plane, the driving module Each grinding tooth is moved along the central axis, so that if the position of the grinding wheel is shifted or deflected due to the influence of associated components or other factors in the working environment, resulting in the grinding wheel, especially the grinding teeth of the grinding wheel, not reaching By presetting the grinding position, the driving module can be used to move each grinding tooth along the central axis, that is, the driving module can be used to adjust the length of each grinding tooth extending from the base, so that the end of each grinding tooth is always in the target plane. , that is, on the surface of the silicon wafer to be ground, the surface to be ground of the silicon wafer is always ground at the same time, thereby ensuring the grinding efficiency and grinding effect, so that the surface of the ground silicon wafer has better flatness.
為了使本發明的目的、技術方案及優點更加清楚明白,下面結合附圖及實施例,對本發明進行進一步詳細說明。應當理解,此處所描述的具體實施例僅用以解釋本發明,但並不用於限定本發明。In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but are not used to limit the present invention.
需要說明的是,當元件被稱為「固定於」或「設置於」另一個元件,它可以直接在另一個元件上或者間接在該另一個元件上。當一個元件被稱為是「連接於」另一個元件,它可以是直接連接到另一個元件或間接連接至該另一個元件上。It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.
需要理解的是,術語「長度」、「寬度」、「上」、「下」、「前」、「後」、「左」、「右」、「垂直」、「水平」、「頂」、「底」、「內」、「外」等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。It should be understood that the terms "length", "width", "top", "bottom", "front", "back", "left", "right", "vertical", "horizontal", "top", The orientations or positional relationships indicated by "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply the device referred to. Or elements must have a specific orientation, be constructed and operate in a specific orientation and therefore are not to be construed as limitations on the invention.
此外,術語「第一」、「第二」僅用於描述目的,而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此,限定有「第一」、「第二」的特徵可以明示或者隱含地包括一個或者更多個該特徵。在本發明的描述中,「多個」的含義是兩個或兩個以上,除非另有明確具體的限定。In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, features defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.
在本發明中,除非另有明確的規定和限定,術語「安裝」、「相連」、「連接」、「固定」等術語應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本領域的具有通常知識者而言,可以根據具體情況理解上述術語在本發明中的具體含義。In the present invention, unless otherwise clearly stated and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection. , or integrated; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interaction between two elements. For those with ordinary knowledge in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
參見圖1,其示出了用於對矽片S進行研磨的相關雙面研磨裝置1,雙面研磨裝置1包括對向設置的第一靜壓支撐件11和第二靜壓支撐件12,以及對向設置的第一研磨輪13和第二研磨輪14,第一靜壓支撐件11和第二靜壓支撐件12設置成用於向放置於二者之間的矽片S的兩個側面同時施加流體壓力,從而以非接觸的方式支承矽片S,第一研磨輪13和第二研磨輪14在矽片S被靜壓支撐件支承的情況下按照預定的研磨軌跡同時對矽片S的兩個側面進行研磨,雙面研磨裝置1還包括:第一水平支撐桿15、第二水平支撐桿16、第一垂直支撐桿17、第二垂直支撐桿18、基台19,其中,第一靜壓支撐件11和第一研磨輪13以及第二靜壓支撐件12和第二研磨輪14分別經由第一水平支撐桿15和第一垂直支撐桿17以及第二水平支撐桿16和第二垂直支撐桿18支撐在基台19上。Referring to Figure 1, a related double-sided
為了對雙面研磨裝置的各部件進行穩定支撐以使雙面研磨操作能夠穩定執行,基台19通常由金屬製成,並且在研磨期間,還需要對研磨輪和矽片提供研磨水以減少對矽片的不必要損傷。然而,隨著設備連續加工及研磨水的持續供應,研磨室溫度會不斷發生變化,導致金屬基台19發生一定的形變,由於研磨輪和靜壓支撐件通過支撐桿被支撐在基台上,基台發生形變會導致研磨輪的研磨位置隨之發生變化,最終導致加工矽片精度惡化。例如,參見圖2,當基台19受到溫度影響使得其上表面發生向上的膨脹時,設置在基台19上的第一水平支撐桿15、第二水平支撐桿16、第一垂直支撐桿17、第二垂直支撐桿18分別相對於各自的初始垂直位置發生了偏轉,支撐桿的偏轉致使第一靜壓支撐件11和第一研磨輪13以及第二靜壓支撐件12和第二研磨輪14也分別相對於它們各自的初始位置發生了偏轉,甚至不再與矽片S的待研磨的側面平行,類似地,參見圖3,當基台19受到溫度影響使得其上表面發生向下的收縮時,支撐桿連同靜壓支撐件、研磨輪分別相對於它們各自的初始位置發生了偏轉,研磨輪的偏轉將導致實際的研磨平面與矽片表面無法重合,而是相對於彼此形成一定的角度,當該角度超出一定範圍時將導致在任何時刻,僅研磨輪的一部分能夠執行研磨操作,如在圖4中示意性示出的,研磨輪的僅一部分研磨齒能夠與矽片相接觸,而且這一部分研磨齒相對於矽片的研磨深度通常將高於預設值,在這情況下不僅研磨效率明顯降低,研磨出的矽片的平坦度將無法達到預期要求。In order to stably support each component of the double-sided grinding device so that the double-sided grinding operation can be performed stably, the
為了解決上述問題,參見圖5,本發明實施例提出了一種研磨輪100,該研磨輪100包括:具有中心軸線X的基座101;多個研磨齒102,該多個研磨齒102沿周向方向分佈在該基座101的與該中心軸線X垂直的一個表面上並且從該表面伸出,在圖5中所示出的實施例中,該多個研磨齒102沿周向方向分佈在該基座101的表面103上並且從表面103伸出,其中,表面103與中心軸線X垂直,該多個研磨齒102設置成能夠與該基座101一起繞該基座101的中心軸線X旋轉,以通過每個研磨齒的末端對矽片S的處於目標平面A-A中的待研磨表面S1進行研磨;驅動模組104,該驅動模組104設置成:當該基座101的中心軸線X不與該目標平面A-A垂直時,該驅動模組104使每個研磨齒102沿該中心軸線X移動,以使得每個研磨齒的末端總是處於該目標平面A-A中。In order to solve the above problems, referring to Figure 5, an embodiment of the present invention proposes a grinding wheel 100. The grinding wheel 100 includes: a base 101 with a central axis X; a plurality of grinding teeth 102, which are arranged along the circumferential direction. The direction is distributed on a surface of the base 101 that is perpendicular to the central axis On and protruding from the surface 103 of the base 101, where the surface 103 is perpendicular to the central axis X, the plurality of grinding teeth 102 are arranged to be able to rotate together with the base 101 around the central axis The surface S1 to be polished in the target plane A-A of the silicon wafer S is ground through the end of each grinding tooth; the driving module 104 is configured to: when the central axis X of the base 101 is not in line with the When the target plane A-A is vertical, the driving module 104 moves each grinding tooth 102 along the central axis X so that the end of each grinding tooth is always in the target plane A-A.
如圖5中所示,研磨輪100例如受關聯部件的影響而發生了偏轉,致使研磨輪100的基座101的中心軸線X並不與矽片S的待研磨表面S1垂直,為了在研磨輪100發生偏轉的情況下仍保證研磨效率和研磨效果,不同於包括固定的研磨齒的相關研磨輪,本發明實施例提供的研磨輪100的研磨齒102以可伸縮的方式設置在研磨輪100的基座101中,具體而言,研磨輪100的研磨齒102設置成能夠通過驅動模組104沿基座101的中心軸線X進行移動,從而改變研磨齒102從表面103伸出的長度,在圖5示出的研磨輪100的狀態中,研磨齒102A至102G相對於表面103的伸出長度逐漸增大,使得研磨齒102A至102G的末端都處於目標平面A-A中,在實際應用中,目標平面A-A例如可以是垂直平面,以能夠與被保持垂直的矽片S的待研磨表面S1重合,從而研磨齒102A至102G可以同時經由各自的端面對矽片S的待研磨表面S1進行研磨。由於研磨輪100在研磨操作中將繞中心軸線X旋轉,因此,研磨輪100的各個研磨齒102相對於中心軸線X的位置也在發生變化,驅動模組104則可以在研磨過程中持續使每個研磨齒102沿該中心軸線X移動,以使得每個研磨齒102的末端總是處於該目標平面A-A中,例如在研磨輪100從圖5的狀態繞中心軸線X向圖6的狀態旋轉的過程中,驅動模組104持續使研磨齒102A至102G沿中心軸線X移動,當研磨輪100旋轉至圖6示出的狀態中時,研磨齒102A至102G相對於表面103的伸出長度已變化為是逐漸減小的,使得研磨齒102A至102G的末端始終處於目標平面A-A中,從而始終同時對矽片S的待研磨表面S1進行研磨。As shown in FIG. 5 , the grinding wheel 100 is deflected, for example, due to the influence of related components, so that the central axis The grinding efficiency and grinding effect are still ensured even if the grinding wheel 100 is deflected. Different from related grinding wheels including fixed grinding teeth, the grinding teeth 102 of the grinding wheel 100 provided by the embodiment of the present invention are retractably arranged on the grinding wheel 100. In the base 101, specifically, the grinding teeth 102 of the grinding wheel 100 are configured to move along the central axis In the state of the grinding wheel 100 shown in 5, the protruding length of the grinding teeth 102A to 102G relative to the surface 103 gradually increases, so that the ends of the grinding teeth 102A to 102G are in the target plane A-A. In practical applications, the target plane A-A may be, for example, a vertical plane to coincide with the surface to be polished S1 of the silicon wafer S that is kept vertical, so that the grinding teeth 102A to 102G can simultaneously grind the surface to be polished S1 of the silicon wafer S through their respective ends. Since the grinding wheel 100 will rotate around the central axis X during the grinding operation, the position of each grinding tooth 102 of the grinding wheel 100 relative to the central axis Each grinding tooth 102 moves along the central axis During the process, the driving module 104 continues to move the grinding teeth 102A to 102G along the central axis The angle is gradually reduced, so that the ends of the grinding teeth 102A to 102G are always in the target plane A-A, so that the surface S1 to be polished of the silicon wafer S is always ground simultaneously.
本發明實施例提供了一種研磨輪100;該研磨輪100包括驅動模組104,該驅動模組104設置成當該研磨輪100的基座101的中心軸線X不與目標平面A-A垂直時,該驅動模組104使每個研磨齒102沿該中心軸線X移動,由此,如果研磨輪100因受工作環境中的關聯部件或其他因素的影響發生位置偏移和/或偏轉而導致研磨輪、特別是研磨輪的研磨齒未達到預設研磨位置,例如僅部分研磨齒的末端能夠與矽片相接觸,則可以憑藉驅動模組104使各個研磨齒102沿中心軸線X移動,即憑藉驅動模組104調整各個研磨齒102從基座101伸出的長度,從而使各個研磨齒102的末端總是處於目標平面A-A中、即矽片的待研磨表面S1上,以始終同時對矽片的待研磨表面S1進行研磨,進而保證研磨效率和研磨效果,使研磨後的矽片表面具有較好的平坦度。An embodiment of the present invention provides a grinding wheel 100; the grinding wheel 100 includes a driving module 104, and the driving module 104 is configured so that when the central axis The driving module 104 moves each grinding tooth 102 along the central axis In particular, if the grinding teeth of the grinding wheel have not reached the preset grinding position, for example, only the ends of some of the grinding teeth can contact the silicon wafer, the driving module 104 can be used to move each grinding tooth 102 along the central axis The group 104 adjusts the length of each grinding tooth 102 extending from the base 101 so that the end of each grinding tooth 102 is always in the target plane A-A, that is, on the surface S1 of the silicon wafer to be polished, so as to always simultaneously grind the silicon wafer. The grinding surface S1 is used for grinding to ensure grinding efficiency and effect, so that the surface of the ground silicon wafer has better flatness.
為了能夠更精準地基於研磨輪的旋轉來驅動研磨齒102沿中心軸線X的移動,該研磨輪100還包括多個距離檢測單元105,該多個距離檢測單元105用於在該研磨輪100對矽片S進行研磨時分別即時檢測每個研磨齒102在該基座101的該表面103上的位置相對於該目標平面的距離,並且該驅動模組104設置成能夠根據該距離驅動每個研磨齒102沿該中心軸線X移動,以使得每個研磨齒102的末端總是處於該目標平面A-A中。In order to more accurately drive the movement of the grinding gear 102 along the central axis When the silicon wafer S is being ground, the distance between the position of each grinding tooth 102 on the surface 103 of the base 101 relative to the target plane is detected in real time, and the driving module 104 is configured to drive each grinding tooth 102 according to the distance. The teeth 102 move along the central axis X so that the end of each grinding tooth 102 is always in the target plane A-A.
具體地,參見圖7,該研磨輪100包括多個距離檢測單元105,為了簡便起見,圖7中僅示出了距離檢測單元105A和105B,然而,本領域之具有通常知識者應當理解的是,距離檢測單元105可以具有與研磨齒102相應的數目並且可以在研磨輪100的基座101的表面103上相鄰於各個研磨齒102設置,例如,距離檢測單元105A相鄰於研磨齒102A設置在表面103上,以即時測量研磨齒102A在基座101的表面103上的位置距目標平面A-A的距離D1,類似地,距離檢測單元105B相鄰於研磨齒102B設置在表面103上,以即時測量研磨齒102B在基座101的表面103上的位置距目標平面A-A的距離D2,驅動模組104則可以將由各個距離檢測單元105即時測量的距離與初始距離進行比較,然後通過例如電動機、連桿機構等使各個研磨齒沿中心軸線X移動相應的量,使得在研磨輪的旋轉研磨操作過程中,每個研磨齒的末端總是處於該目標平面A-A中,以始終同時參與研磨操作。本領域之具有通常知識者能夠理解的是,驅動模組104也可以通過的其他相關技術手段驅動研磨齒沿中心軸線X移動,在此不做贅述。Specifically, referring to FIG. 7 , the grinding wheel 100 includes a plurality of distance detection units 105 . For simplicity, only the distance detection units 105A and 105B are shown in FIG. 7 . However, those skilled in the art should understand that Yes, the distance detection unit 105 may have a corresponding number to the grinding teeth 102 and may be disposed adjacent to each grinding tooth 102 on the surface 103 of the base 101 of the grinding wheel 100, for example, the distance detection unit 105A is adjacent to the grinding tooth 102A. is disposed on the surface 103 to instantly measure the distance D1 between the position of the grinding teeth 102A on the surface 103 of the base 101 and the target plane A-A. Similarly, the distance detection unit 105B is disposed on the surface 103 adjacent to the grinding teeth 102B to Instantly measure the distance D2 between the position of the grinding teeth 102B on the surface 103 of the base 101 and the target plane A-A. The driving module 104 can compare the distance measured in real time by each distance detection unit 105 with the initial distance, and then use, for example, a motor, The linkage mechanism etc. moves each grinding tooth along the central axis Those with ordinary knowledge in the art can understand that the driving module 104 can also drive the grinding teeth to move along the central axis X through other related technical means, which will not be described again here.
為了實現對每個研磨齒102的精準驅動,參見圖8,根據本發明的另一優選實施例,該驅動模組104包括多個流體壓力驅動單元106,該多個流體壓力驅動單元106構造成當該研磨輪100對矽片S進行研磨時分別對每個研磨齒102施加沿該中心軸線的力,以使得每個研磨齒102始終對該矽片S的處於該目標平面A-A中的待研磨表面S1施加恆定的力。In order to achieve precise driving of each grinding tooth 102, referring to Figure 8, according to another preferred embodiment of the present invention, the driving module 104 includes a plurality of fluid pressure driving units 106, and the plurality of fluid pressure driving units 106 are configured to When the grinding wheel 100 is grinding the silicon wafer S, a force is applied to each grinding tooth 102 along the central axis, so that each grinding tooth 102 is always on the silicon wafer S to be ground in the target plane A-A. Surface S1 exerts a constant force.
在圖8示出的實施例中,針對每個研磨齒設置有一個液壓流體驅動單元,為了清楚起見,僅示出了流體壓力驅動單元106A、106B、106C和106D,在研磨輪100對矽片S執行研磨操作時,各個流體壓力驅動單元分別向每個研磨齒102提供沿中心軸線X的力,一旦研磨輪100相對於矽片發生偏轉和/或偏移使得該基座101的中心軸線X不與該目標平面A-A垂直或者僅部分研磨齒的末端能夠與矽片相接觸,各個流體壓力驅動單元可以分別調整對與其關聯的研磨齒施加的力,以使得每個研磨齒102沿中心軸線X始終向矽片S的待研磨表面S1施加恆定的力,由此每個研磨齒都能夠在整個研磨操作中同時對矽片S的待研磨表面S1進行研磨並且所施加的研磨力始終是一致的,使得研磨後的矽片具有更好的平坦度。In the embodiment shown in FIG. 8 , one hydraulic fluid drive unit is provided for each grinding tooth. For the sake of clarity, only the fluid pressure drive units 106A, 106B, 106C and 106D are shown. When the chip S performs a grinding operation, each fluid pressure driving unit provides a force along the central axis If X is not perpendicular to the target plane A-A or only some of the ends of the grinding teeth can contact the silicon wafer, each fluid pressure drive unit can separately adjust the force applied to its associated grinding teeth so that each grinding tooth 102 is along the central axis. X always applies a constant force to the surface S1 to be polished of the silicon wafer S, so that each grinding tooth can simultaneously grind the surface S1 to be polished of the silicon wafer S during the entire grinding operation and the applied grinding force is always consistent. , so that the polished silicon wafer has better flatness.
對於流體壓力驅動單元的具體實現方式,優選地,參見圖8,每個流體壓力驅動單元106包括:用於容納流體的流體壓力缸107、能夠在該流體壓力缸107內進行往復運動的活塞108、壓力感測器109和控制器110,其中,該活塞108與研磨齒102固定連接,該壓力感測器109設置成用於感測矽片S對研磨齒102的反作用力,並且該控制器110設置成能夠根據該壓力感測器109的感測結果控制該活塞108在該流體壓力缸107內進行往復運動,以使得每個研磨齒始終對該矽片的處於該目標平面中的表面施加恆定的力。Regarding the specific implementation of the fluid pressure drive unit, preferably, referring to FIG. 8 , each fluid pressure drive unit 106 includes: a fluid pressure cylinder 107 for containing fluid, and a piston 108 capable of reciprocating movement within the fluid pressure cylinder 107 , a pressure sensor 109 and a controller 110, wherein the piston 108 is fixedly connected to the grinding teeth 102, the pressure sensor 109 is configured to sense the reaction force of the silicon chip S to the grinding teeth 102, and the controller 110 is configured to be able to control the piston 108 to reciprocate in the fluid pressure cylinder 107 according to the sensing result of the pressure sensor 109, so that each grinding tooth always exerts force on the surface of the silicon chip in the target plane. constant force.
如圖8所示,活塞108沿中心軸線X的方向設置在流體壓力缸107內,並且活塞108的一端連接至研磨齒102,使得當活塞108在流體壓力缸107內進行往復運動時能夠帶動研磨齒102沿中心軸線X的方向進行移動。在研磨操作中,如果研磨輪100相對於矽片S發生偏轉和/或偏移使得該基座101的中心軸線X不與該目標平面A-A垂直或者僅部分研磨齒的末端能夠與矽片相接觸,那麼矽片S反作用於各個研磨齒102的力將發生變化,該力的變化能夠從研磨齒102通過活塞108傳遞至流體壓力缸107中的流體,因此能夠被壓力感測器109感測到,壓力感測器109可以將該感測結果發送至控制器110,控制器110可以根據感測結果通過向流體壓力缸107注入流體或從流體壓力缸107排出流體來調節流體壓力缸107中的流體壓力,而流體壓力缸107中的流體壓力的變化可以引起活塞108在流體壓力缸107中的運動,進而帶動研磨齒102沿中心軸線X移動,由此實現每個研磨齒102始終對該矽片S的處於目標平面A-A中的待研磨表面S1施加恆定的力。在整個研磨過程中,壓力感測器109可以即時檢測流體壓力缸107中的流體壓力的變化,並且控制器110也可以基於檢測結果即時控制研磨齒102沿中心軸線X的移動,以在研磨輪100旋轉的情況下仍能夠保持每個研磨齒102作用於矽片S的待研磨表面S1的力始終是恆定的。As shown in Figure 8, the piston 108 is disposed in the fluid pressure cylinder 107 along the direction of the central axis The teeth 102 move in the direction of the central axis X. During the grinding operation, if the grinding wheel 100 is deflected and/or offset relative to the silicon wafer S such that the central axis , then the force of the silicon chip S acting on each grinding tooth 102 will change. This change in force can be transmitted from the grinding tooth 102 through the piston 108 to the fluid in the fluid pressure cylinder 107, and therefore can be sensed by the pressure sensor 109. , the pressure sensor 109 can send the sensing result to the controller 110, and the controller 110 can adjust the pressure in the fluid pressure cylinder 107 by injecting fluid into the fluid pressure cylinder 107 or discharging fluid from the fluid pressure cylinder 107 according to the sensing result. Fluid pressure, and changes in the fluid pressure in the fluid pressure cylinder 107 can cause the piston 108 to move in the fluid pressure cylinder 107, thereby driving the grinding teeth 102 to move along the central axis A constant force is exerted on the surface S1 of the sheet S to be ground, which is in the target plane A-A. During the entire grinding process, the pressure sensor 109 can instantly detect changes in the fluid pressure in the fluid pressure cylinder 107, and the controller 110 can also instantly control the movement of the grinding teeth 102 along the central axis The force exerted by each grinding tooth 102 on the surface S1 to be grinded of the silicon chip S can still be kept constant even under 100° rotation.
作為本發明的示例性而非限制性的示例,該流體壓力驅動單元106可以包括液壓驅動單元或氣壓驅動單元。As an illustrative and non-limiting example of the present invention, the fluid pressure driving unit 106 may include a hydraulic driving unit or a pneumatic driving unit.
根據本發明另一優選實施例,該流體壓力驅動單元106可以包括與流體壓力驅動單元連通的流體壓力源(圖中未示出),用於為該流體壓力驅動單元106提供流體壓力。According to another preferred embodiment of the present invention, the fluid pressure driving unit 106 may include a fluid pressure source (not shown in the figure) connected to the fluid pressure driving unit for providing fluid pressure to the fluid pressure driving unit 106 .
對於研磨齒102的材料,優選地,該研磨齒由金剛石和結合劑製成。進一步優選地,該結合劑為陶瓷結合劑或樹脂結合劑,其中,採用陶瓷結合劑的研磨齒具有熱穩定好,對磨粒的把持度好,使用壽命長的優點;採用樹脂結合劑的研磨齒具有自銳性好,磨削髮熱少的優點且具有一定的彈性,有利於改善矽片表面的粗糙度。As for the material of the grinding teeth 102, preferably, the grinding teeth are made of diamond and bonding agent. Further preferably, the bond is a ceramic bond or a resin bond. Grinding teeth using ceramic bond have the advantages of good thermal stability, good grip of abrasive grains, and long service life; grinding teeth using resin bond The teeth have the advantages of good self-sharpening, low grinding heat generation and a certain degree of elasticity, which is beneficial to improving the surface roughness of the silicon wafer.
本發明實施例還提供了一種研磨設備10,該研磨設備10用於對矽片進行雙面研磨,該研磨設備10包括:
對向設置在矽片的兩側的兩個靜壓支撐件(即第一靜壓支撐件11、第二靜壓支撐件12),該兩個靜壓支撐件用於通過提供流體靜壓以非接觸的方式支撐矽片S;
對向設置在該矽片S的兩側的兩個根據本發明所述的研磨輪100。
An embodiment of the present invention also provides a grinding equipment 10, which is used for double-sided grinding of silicon wafers. The grinding equipment 10 includes:
Two static pressure support members (ie, the first static
本發明實施例還提供了一種矽片,該矽片通過使用本發明所述的研磨設備10獲得。An embodiment of the present invention also provides a silicon wafer, which is obtained by using the grinding device 10 of the present invention.
需要說明的是:本發明實施例所記載的技術方案之間,在不衝突的情況下,可以任意組合。It should be noted that the technical solutions recorded in the embodiments of the present invention can be combined arbitrarily as long as there is no conflict.
顯然,本領域的具有通常知識者可以對本發明進行各種改動和變型而不脫離本發明的精神和範圍。這樣,倘若本發明的這些修改和變型屬本發明申請專利範圍及其等同技術的範圍之內,則本發明也意圖包含這些改動和變型在內。It will be apparent to those of ordinary skill in the art that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention. In this way, if these modifications and variations of the present invention fall within the scope of the patent application of the present invention and the scope of equivalent technologies, the present invention is also intended to include these modifications and variations.
1:雙面研磨裝置 10:研磨設備 100:研磨輪 101:基座 102:研磨齒 102A-102G:研磨齒 103:表面 104:驅動模組 105:檢測單元 105A-105B:檢測單元 106:流體壓力驅動單元 106A-106D:流體壓力驅動單元 107:流體壓力缸 108:活塞 109:壓力感測器 11:第一靜壓支撐件 110:控制器 12:第二靜壓支撐件 13:第一研磨輪 14:第二研磨輪 15:第一水平支撐桿 16:第二水平支撐桿 17:第一垂直支撐桿 18:第二垂直支撐桿 19:基台 S:矽片 S1:待研磨表面 X:中心軸線 D1,D2:距離 1:Double-sided grinding device 10:Grinding equipment 100:Grinder wheel 101:Pedestal 102:Grinding gear 102A-102G: Grinding gear 103:Surface 104:Driver module 105:Detection unit 105A-105B: Detection unit 106: Fluid pressure drive unit 106A-106D: Fluid pressure drive unit 107:Fluid pressure cylinder 108:Piston 109: Pressure sensor 11: First static pressure support 110:Controller 12:Second static pressure support 13: First grinding wheel 14:Second grinding wheel 15:First horizontal support rod 16:Second horizontal support rod 17:First vertical support rod 18:Second vertical support rod 19:Abutment S: Silicon chip S1: Surface to be ground X: central axis D1, D2: distance
圖1為相關的雙面研磨設備的示意圖; 圖2為相關的雙面研磨設備的另一示意圖,其示出了雙面研磨設備受溫度影響發生變形的狀態; 圖3為相關的雙面研磨設備的又一示意圖,其示出了雙面研磨設備受溫度影響發生變形的另一狀態; 圖4為相關的研磨輪在對矽片執行研磨操作時的示意圖; 圖5為本發明實施例提供的研磨輪的示意圖; 圖6為本發明實施例提供的研磨輪的另一示意圖; 圖7為本發明的另一實施例提供的研磨輪的示意圖; 圖8為本發明的又一實施例提供的研磨輪的示意圖; 圖9為本發明實施例提供的研磨設備的示意圖。 Figure 1 is a schematic diagram of related double-sided grinding equipment; Figure 2 is another schematic diagram of the related double-sided grinding equipment, which shows the state in which the double-sided grinding equipment is deformed due to the influence of temperature; Figure 3 is another schematic diagram of the related double-sided grinding equipment, which shows another state in which the double-sided grinding equipment is deformed due to the influence of temperature; Figure 4 is a schematic diagram of a related grinding wheel performing a grinding operation on a silicon wafer; Figure 5 is a schematic diagram of a grinding wheel provided by an embodiment of the present invention; Figure 6 is another schematic diagram of a grinding wheel provided by an embodiment of the present invention; Figure 7 is a schematic diagram of a grinding wheel provided by another embodiment of the present invention; Figure 8 is a schematic diagram of a grinding wheel provided by another embodiment of the present invention; Figure 9 is a schematic diagram of the grinding equipment provided by the embodiment of the present invention.
100:研磨輪 100:Grinder wheel
101:基座 101:Pedestal
102:研磨齒 102:Grinding gear
102A-102G:研磨齒 102A-102G: Grinding gear
103:表面 103:Surface
104:驅動模組 104:Driver module
S:矽片 S: Silicon chip
S1:待研磨表面 S1: Surface to be ground
X:中心軸線 X: central axis
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