TWI833444B - Chip on film package structure - Google Patents

Abstract

A chip on film package structure includes a flexible circuit substrate, a chip and a heat dissipation structure. The flexible circuit substrate has a first surface and a second surface opposite to each other. The first surface has a chip bonding area. The chip is disposed on the chip bonding area and bonded to the flexible circuit substrate. The heat dissipation structure is disposed on at least one of the first surface and the second surface. The heat dissipation structure includes a first heat dissipation sheet. The first heat dissipation sheet includes a first bottom adhesive, a first heat dissipation layer and a first insulating protection layer. The first bottom adhesive is attached to the first surface of the first heat dissipation layer. The first insulating protection layer is disposed on the second surface of the first heat dissipation layer. The first insulating protection layer and the first heat dissipation layer are repeatedly folded to form a fin-shaped structure or the first heat dissipation sheet further includes a fin-shaped structure formed on the first insulating protection layer.

Description

Thin film flip-chip packaging structure

The invention relates to a thin film flip-chip packaging structure.

In the semiconductor industry, chips are packaged through a packaging process to protect the chips from the external environment. In the display panel industry, high-performance chips are often placed on flexible circuit boards in a flip-chip package to obtain a thin film flip-chip package structure. With the improvement of semiconductor process technology, chips are developing towards high power and high pin count. However, this has resulted in increasing amounts of heat generated by the chips in the thin film flip-chip packaging structure. Therefore, there is an urgent need for a method that can improve the heat dissipation capability of thin film flip-chip packaging structures.

The invention provides a thin film flip-chip packaging structure, which can improve the problem of reduced performance of the chip due to excessive temperature.

At least one embodiment of the present invention provides a thin film flip-chip packaging structure. The thin film flip-chip packaging structure includes a flexible circuit substrate, a chip and a heat dissipation structure. The flexible circuit substrate has a first surface and a second surface opposite to each other. The first surface has a wafer bonding area. The chip is disposed in the chip bonding area and bonded to the flexible circuit substrate. The heat dissipation structure is disposed on at least one of the first surface and the second surface and corresponds to the chip bonding area. The heat dissipation structure includes a first heat dissipation patch. The first heat dissipation patch includes a first base glue layer, a first heat dissipation layer and a first insulating protective layer. The first primer layer is attached to the first surface of the first heat dissipation layer. The first insulating protective layer is disposed on the second side of the first heat dissipation layer opposite to the first side. The first insulating protective layer and the first heat dissipation layer are repeatedly bent to form a fin-shaped structure or the first heat dissipation patch further includes a fin-shaped structure formed on the first insulating protective layer.

Based on the above, the film flip-chip packaging structure can use a heat dissipation structure with a fin-shaped structure to increase the heat dissipation area, or through the combination of multi-layer heat dissipation materials and fin-shaped structures, effectively improve the overall heat dissipation efficiency of the film flip-chip packaging structure.

FIG. 1A is a schematic top view of a first heat dissipation patch 300 according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view along line a-a' of Fig. 1A. Referring to FIGS. 1A and 1B , the first heat dissipation patch 300 includes a first base layer 312 , a first heat dissipation layer 314 and a first insulating protection layer 318 , and the first heat dissipation patch 300 additionally includes a first insulating protection layer formed on Fin structure 320 on layer 318.

The material of the first heat dissipation layer 314 may include metal foil or graphite film, where the metal foil is, for example, aluminum foil or copper foil, but the invention is not limited thereto. The first primer layer 312 is attached to the first surface 314a of the first heat dissipation layer 314. In this embodiment, the sides of the first primer layer 312 are aligned with the sides of the first heat dissipation layer 314, but the invention is not limited thereto. In other embodiments, the area of the first primer layer 312 is smaller than the area of the first heat dissipation layer 314 , so that the sides of the first primer layer 312 are retracted from the sides of the first heat dissipation layer 314 .

The first insulating protective layer 318 is disposed on the second surface 314b of the first heat dissipation layer 314 opposite to the first surface 314a. In some embodiments, the first heat dissipation patch 300 optionally further includes a first adhesive layer 316, and the first insulating protective layer 318 is attached to the second surface of the first heat dissipation layer 314 with the first adhesive layer 316. 314b. The material of the first insulating protective layer 318 is, for example, polyimide (PI) or other suitable polymer materials, but the present invention is not limited thereto. In this embodiment, the area of the first insulating protective layer 318 is larger than the area of the first heat dissipation layer 314, but the invention is not limited thereto. In other embodiments, the area of the first insulating protective layer 318 is equal to the area of the first heat dissipation layer 314 .

In this embodiment, the fin-shaped structure 320 includes a plurality of heat dissipation rubber strips, and the heat dissipation rubber strips are arranged at intervals on the first insulating protective layer 318 . In some embodiments, the heat dissipation strip includes a polymer and a thermally conductive filler dispersed in the polymer. The polymer may be a thermoset polymer or a UV-curable polymer. Thermal conductive filler materials include metal particles, aluminum oxide, zinc oxide, silicon nitride, aluminum nitride, boron nitride, graphene, carbon nanotubes, carbon nanospheres, silicon dioxide, titanium dioxide, titanium diboride, Glass, diamond, diamond powder, silicon carbide, boron carbide, tungsten carbide or combinations thereof or other suitable materials. In this embodiment, in the direction D1 perpendicular to the surface of the first insulating protective layer 318, all the heat dissipation strips overlap the first heat dissipation layer 314, thereby reducing the probability of the heat dissipation strips collapsing during the manufacturing process. . In other embodiments, in the direction D1 perpendicular to the surface of the first insulating protective layer 318 , some of the heat dissipation strips do not overlap the first heat dissipation layer 314 .

Furthermore, in this embodiment, these heat dissipation rubber strips constitute a plurality of fins 322 of the fin-shaped structure 320, and these fins 322 are spaced apart and extend along one direction. Through the arrangement of these fins 322, the contact area between the first heat dissipation patch 300 and the outside world is increased, that is, the heat dissipation area is increased, which can further improve the heat dissipation efficiency.

FIG. 2A is a schematic bottom view of a thin film flip-chip packaging structure 10 according to an embodiment of the present invention. Fig. 2B is a schematic cross-sectional view along line a-a' of Fig. 2A. It must be noted here that the embodiment of FIGS. 2A and 2B follows the component numbers and part of the content of the embodiment of FIGS. 1A and 1B , where the same or similar numbers are used to represent the same or similar elements, and the same or similar elements are omitted. Description of technical content. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

Referring to FIGS. 2A and 2B , the thin film flip-chip packaging structure 10 includes a flexible circuit substrate 100 , a chip 200 and a heat dissipation structure DS1 . In this embodiment, the heat dissipation structure DS1 includes the first heat dissipation patch 300 as shown in FIG. 1A and FIG. 1B .

The flexible circuit substrate 100 has an opposite first surface 100a and a second surface 100b. The first surface 100a has a wafer bonding area CB. The flexible circuit substrate 100 includes a flexible base material 110 , a conductor layer 120 and a solder mask layer 130 . In this embodiment, the flexible circuit substrate 100 is a single-sided circuit board, and the flexible base material 110 is provided with the wire layer 120 and the solder mask layer 130 on only one side, but the invention is not limited to this. In other embodiments, the flexible circuit substrate 100 is a double-sided circuit board, and the conductive layer 120 and the solder mask layer 130 are provided on both sides of the flexible substrate 110 .

In some embodiments, the flexible substrate 110 is made of, for example, polyethylene terephthalate (PET), polyimide, polyethersulfone (PES), or polycarbonate (PC). ) or other suitable flexible material. The conductor layer 120 includes, for example, circuit structures such as conductors, pads, and pins. In some embodiments, the material of the conductive layer 120 is, for example, copper, copper alloy, tinned copper or other suitable materials. The solder mask 130 partially covers the conductor layer 120, and the solder mask 130 has an opening defining the chip bonding area CB.

The chip 200 is disposed on the first surface 100a of the flexible circuit substrate 100 and is located in the chip bonding area CB. The wafer 200 is bonded to the wire layer 120 of the flexible circuit substrate 100 . For example, the bumps 202 of the chip 200 are eutectic bonded to the inner pins in the conductive layer 120 through a thermal compression bonding process. In some embodiments wafer 200 may be a driver wafer or any suitable wafer. In some embodiments, the underfill material UF is filled at least between the chip 200 and the flexible circuit substrate 100 to protect the electrical contacts between the bumps 202 and the inner pins.

The heat dissipation structure DS1 is disposed on at least one of the first surface 100a and the second surface 100b of the flexible circuit substrate 100 and corresponds to the chip bonding area CB. In this embodiment, the heat dissipation structure DS1 is disposed on the second surface 100b of the flexible circuit substrate 100. Specifically, the first heat dissipation patch 300 of the heat dissipation structure DS1 is attached to the second surface 100b with the first primer layer 312 at a position relative to the chip bonding area CB. The fin-shaped structure 320 of the first heat dissipation patch 300 includes a plurality of fins 322 (ie, heat dissipation strips), which are spaced apart and extend along the long side 200 a of the chip 200 . These fins 322 can increase the contact area between the first heat dissipation patch 300 and the outside world, that is, increase the heat dissipation area, which helps to improve the overall heat dissipation efficiency of the thin film flip-chip packaging structure 10 .

FIG. 3A is a schematic top view of a thin film flip-chip packaging structure 20 according to an embodiment of the present invention. Fig. 3B is a schematic cross-sectional view along line a-a' of Fig. 3A. It must be noted here that the embodiment of FIGS. 3A and 3B follows the component numbers and part of the content of the embodiment of FIGS. 2A and 2B , where the same or similar numbers are used to represent the same or similar elements, and the same or similar elements are omitted. Description of technical content. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The main difference between the film flip-chip packaging structure 20 of FIGS. 3A and 3B and the film flip-chip packaging structure 10 of FIGS. 2A and 2B is that the heat dissipation structure DS2 of the film flip-chip packaging structure 20 is further disposed on the first side of the flexible circuit substrate 100 on the surface 100a and corresponding to the wafer bonding area CB.

Please refer to FIGS. 3A and 3B . Specifically, the first heat dissipation patch 300 of the heat dissipation structure DS2 disposed on the first surface 100 a of the flexible circuit substrate 100 is attached to the chip 200 with a first primer layer 312 . In some embodiments, the first heat dissipation patch 300 disposed on the first surface 100a is also attached to the underfill material UF. The plurality of fins 322 (ie, heat dissipation strips) of the fin-shaped structure 320 of the first heat dissipation patch 300 are spaced apart and extend along the long side 200 a of the chip 200 . For a detailed description of the first heat dissipation patch 300 of this embodiment, please refer to the embodiment of FIG. 1A and FIG. 1B , which will not be described again here. Compared with the film flip-chip packaging structure 10 of FIG. 2A and FIG. 2B , the film flip-chip packaging structure 20 of this embodiment is also provided with a first heat dissipation patch 300 having a fin-shaped structure 320 on the first surface 100 a. A heat dissipation patch 300 directly contacts the heat source (i.e., the chip 200) and the fin-shaped structure 320 to increase the heat dissipation area, which can more efficiently dissipate the heat energy generated when the chip 200 is operating, helping to improve the overall thin film flip-chip packaging structure 20 heat dissipation efficiency.

FIG. 4A is a schematic top view of a first heat dissipation patch 300A according to an embodiment of the present invention. Fig. 4B is a schematic cross-sectional view along line a-a' of Fig. 4A. Please refer to FIG. 4A and FIG. 4B. The first heat dissipation patch 300A includes a first base glue layer 312A, a first heat dissipation layer 314A and a first insulating protective layer 318A. The first primer layer 312A is attached to the first surface 314a of the first heat dissipation layer 314A. The first insulating protective layer 318A is disposed on the second surface 314b of the first heat dissipation layer 314A opposite to the first surface 314a. The first insulating protective layer 318A and the first heat dissipation layer 314A are repeatedly bent to form a fin-shaped structure 320A. The fin-shaped structure 320A includes a plurality of fins 322A, which are spaced apart and extend along one direction. Through the arrangement of these fins 322A, the contact area between the first heat dissipation patch 300A and the outside world is increased, that is, the heat dissipation area is increased, which can further improve the heat dissipation efficiency.

The material of the first heat dissipation layer 314A may include metal foil, such as aluminum foil or copper foil, but the invention is not limited thereto. In this embodiment, the sides of the first primer layer 312A are aligned with the sides of the first heat dissipation layer 314A, but the invention is not limited thereto. In other embodiments, the area of the first primer layer 312A is smaller than the area of the first heat dissipation layer 314A, so that the sides of the first primer layer 312A are retracted from the sides of the first heat dissipation layer 314A.

In some embodiments, the first heat dissipation patch 300A optionally further includes a first adhesive layer 316A, and the first insulating protective layer 318A is attached to the second surface of the first heat dissipation layer 314A with the first adhesive layer 316A. 314b. The material of the first insulating protective layer 318A is, for example, polyimide or other suitable polymer materials, but the present invention is not limited thereto. In this embodiment, the area of the first insulating protective layer 318A is larger than the area of the first heat dissipation layer 314A, but the invention is not limited thereto. In other embodiments, the area of the first insulating protective layer 318A is equal to the area of the first heat dissipation layer 314A.

In some embodiments, the method of manufacturing the first heat dissipation patch 300A includes laminating the first base glue layer 312A, the first heat dissipation layer 314A and the first insulating protective layer 318A and then bending them together, or folding the first heat dissipation layer 314A is folded after being stacked with the first insulating protective layer 318A, and then a first primer layer 312A is formed on the first surface 314a of the first heat dissipation layer 314A.

Figure 5 is a schematic cross-sectional view of a first heat dissipation patch according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 5 follows the component numbers and part of the content of the embodiment of FIG. 4A and FIG. 4B , where the same or similar numbers are used to represent the same or similar elements, and references with the same technical content are omitted. instruction. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The main difference between the first heat dissipation patch 300B of FIG. 5 and the first heat dissipation patch 300A of FIGS. 4A and 4B is that the first insulating protective layer 318B of the first heat dissipation patch 300B is formed by coating.

Please refer to FIG. 5 , the first insulating protective layer 318B is disposed on the second surface 314b of the first heat dissipation layer 314A. In some embodiments, the area of the first insulating protective layer 318B is equal to the area of the first heat dissipation layer 314A. The manufacturing method of the first heat dissipation patch 300B may include first bending the first heat dissipation layer 314A, and then coating the first insulating protective layer 318B on the second surface 314b of the bent first heat dissipation layer 314A, or first coating the first heat dissipation layer 314A. Distribute the first insulating protective layer 318B on the second surface 314b of the first heat dissipation layer 314A, and then bend the first insulating protective layer 318B and the first heat dissipating layer 314A together. In this embodiment, there is no need to use a first adhesive layer to bond the first insulating protective layer 318B and the first heat dissipation layer 314A. The first insulating protective layer 318B directly contacts the first heat dissipation layer 314A.

FIG. 6 is a schematic cross-sectional view of a thin film flip-chip packaging structure according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 6 follows the component numbers and part of the content of the embodiment of FIG. 4A and FIG. 4B , where the same or similar numbers are used to represent the same or similar elements, and references with the same technical content are omitted. instruction. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

Referring to FIG. 6 , the thin film flip-chip packaging structure 30 includes a flexible circuit substrate 100 , a chip 200 , an underfill material UF and a heat dissipation structure DS3 . In this embodiment, the two heat dissipation structures DS3 each include a first heat dissipation patch 300A, and are respectively disposed on the first surface 100a and the second surface 100b of the flexible circuit substrate 100.

As shown in FIGS. 4A and 4B , the first heat dissipation patch 300A has a fin-shaped structure 320A formed by repeated bending of the first insulating protective layer 318A and the first heat dissipation layer 314A. For a detailed description of the first heat dissipation patch 300A, please refer to FIG. 4A, FIG. 4B and related text descriptions, and will not be described again here.

Specifically, the first heat dissipation patches 300A of the two heat dissipation structures DS3 are respectively arranged corresponding to the chip bonding areas CB. In this embodiment, the first heat dissipation patch 300A disposed on the first surface 100a is attached to the chip 200 with a first primer layer 312A. In some embodiments, the first heat dissipation patch 300A disposed on the first surface 100a is also attached to the underfill material UF. The plurality of fins 322A of the fin structure 320A of the first heat dissipation patch 300A are spaced apart and extend along the long side 200 a of the chip 200 . The film flip-chip packaging structure 30 of this embodiment is provided with a first heat dissipation patch 300A having a fin-shaped structure 320A on both the first surface 100a and the second surface 100b, which can more efficiently dissipate the heat energy generated when the chip 200 is operated. , which helps to improve the overall heat dissipation efficiency of the thin film flip-chip packaging structure 30 .

In other embodiments, the heat dissipation structure DS3 of the thin film flip-chip packaging structure 30 can also use the first heat dissipation patch 300B shown in FIG. 5 , whose first insulating protective layer 318A is formed on the first heat dissipation layer 314A by coating. Therefore, the first adhesive layer 316A joining the first insulating protective layer 318A and the first heat dissipation layer 314A can be omitted.

Although in this embodiment, the heat dissipation structures DS3 are respectively disposed on the first surface 100a and the second surface 100b of the flexible circuit substrate 100, the invention is not limited thereto. In other embodiments, the heat dissipation structure DS3 may be disposed on only one of the first surface 100a and the second surface 100b according to requirements.

FIG. 7 is a schematic cross-sectional view of a thin film flip-chip packaging structure according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 7 follows the component numbers and part of the content of the embodiment of FIG. 4A and FIG. 4B , where the same or similar numbers are used to represent the same or similar elements, and references with the same technical content are omitted. instruction. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

The film flip-chip packaging structure 40 includes a flexible circuit substrate 100, a chip 200, an underfill material UF, and a heat dissipation structure DS4. In this embodiment, each of the two heat dissipation structures DS4 includes a first heat dissipation patch 300A, a second heat dissipation patch 400 and a thermally conductive adhesive layer 500. The two heat dissipation structures DS4 are respectively disposed on the first surface 100a and the second surface 100b of the flexible circuit substrate 100, and respectively correspond to the chip bonding areas CB.

Please refer to FIG. 7 , the thermal conductive adhesive layer 500 of each heat dissipation structure DS4 is formed on the second heat dissipation patch 400 , and the first heat dissipation patch 300A is attached to the thermal conductive adhesive layer 500 . The heat dissipation structure DS4 is attached to at least one of the first surface 100 a and the second surface 100 b of the flexible circuit substrate 100 with the second heat dissipation patch 400 . In this embodiment, the two heat dissipation structures DS4 are attached to the first surface 100a and the second surface 100b of the flexible circuit substrate 100 using second heat dissipation patches 400 respectively.

In addition, the method of arranging the heat dissipation structure DS4 on the first surface 100a or the second surface 100b of the flexible circuit substrate 100 may include first laminating the first heat dissipation patch 300A, the thermal conductive adhesive layer 500 and the second heat dissipation patch 400 Then, the laminated heat dissipation structure DS4 is attached to the first surface 100a or the second surface 100b with the second heat dissipation patch 400, or the second heat dissipation patch 400 is first attached to the first surface 100a or the second surface. 100b, then the thermal conductive adhesive layer 500 is formed on the second heat dissipation patch 400, and finally the first heat dissipation patch 300A is attached to the thermal conductive adhesive layer 500.

Specifically, the second heat dissipation patches 400 each include a second base glue layer 412, a second heat dissipation layer 414, and a second insulating protective layer 418. The second primer layer 412 is attached to the third surface 414a of the second heat dissipation layer 414. The second insulating protective layer 418 is disposed on the fourth surface 414b of the second heat dissipation layer 414 opposite to the third surface 414a. In this embodiment, the two heat dissipation structures DS4 are respectively attached to the first surface 100a and the second surface 100b of the flexible circuit substrate 100 using the second primer layer 412 of the second heat dissipation patch 400. The thermally conductive adhesive layer 500 is formed on the second insulating protective layer 418 . The first heat dissipation patch 300A is attached to the thermal conductive adhesive layer 500 with the first base adhesive layer 312A.

The material of the second heat dissipation layer 414 may include metal foil or graphite film, where the metal foil is, for example, aluminum foil or copper foil, but the invention is not limited thereto. In this embodiment, the sides of the second primer layer 412 are aligned with the sides of the second heat dissipation layer 414, but the invention is not limited thereto. In other embodiments, the area of the second primer layer 412 is smaller than the area of the second heat dissipation layer 414 , so that the sides of the second primer layer 412 are retracted from the sides of the second heat dissipation layer 414 .

In some embodiments, the second heat dissipation patch 400 optionally further includes a second adhesive layer 416, and the second insulating protective layer 418 is attached to the fourth surface of the second heat dissipation layer 414 with the second adhesive layer 416. 414b. The material of the second insulating protective layer 418 is, for example, polyimide, but the present invention is not limited thereto. In this embodiment, the area of the second insulating protective layer 418 is larger than the area of the second heat dissipation layer 414, but the invention is not limited thereto. In other embodiments, the area of the second insulating protective layer 418 is equal to the area of the second heat dissipation layer 414 .

In some embodiments, the thermally conductive adhesive layer 500 is formed by coating and curing liquid thermally conductive adhesive or attaching a dry film thermally conductive adhesive film. In some embodiments, the thermally conductive adhesive layer 500 includes a plurality of thermally conductive fillers. The materials of the thermally conductive fillers include metal particles, aluminum oxide, zinc oxide, silicon nitride, aluminum nitride, boron nitride, graphene, and carbon nanotubes. Carbon nanospheres, silicon dioxide, titanium dioxide, titanium diboride, glass, diamond, diamond powder, silicon carbide, boron carbide, tungsten carbide or combinations thereof.

In other embodiments, the heat dissipation structure DS4 of the thin film flip-chip packaging structure 40 may also use the first heat dissipation patch 300B shown in FIG. 5 . Furthermore, although in this embodiment, the heat dissipation structures DS4 are respectively disposed on the first surface 100a and the second surface 100b of the flexible circuit substrate 100, the invention is not limited thereto. In other embodiments, the heat dissipation structure DS4 may be disposed on only one of the first surface 100a and the second surface 100b according to requirements.

In this embodiment, the heat dissipation structure DS4 is composed of a second heat dissipation patch 400, a thermal conductive adhesive layer 500 and a first heat dissipation patch 300A with a fin-shaped structure 320A. Through multiple layers of heat dissipation materials and fin-shaped fins with an increased heat dissipation area, The structure can more efficiently dissipate the heat energy generated when the chip 200 is operating, which helps to improve the overall heat dissipation efficiency of the thin film flip-chip packaging structure 40 .

To sum up, the thin film flip-chip packaging structure of the present invention can use a heat dissipation structure with a fin-shaped structure to increase the heat dissipation area or through the combination of multi-layer heat dissipation materials and fin-shaped structures, effectively improving the overall heat dissipation efficiency of the thin film flip-chip packaging structure.

10,20,30,40: Thin film flip-chip packaging structure

100: Flexible circuit substrate

100a: first surface

100b: Second surface

110: Flexible substrate

120: Wire layer

130: Solder mask

200:wafer

200a: long side

202: Bump

300, 300A, 300B: The first heat dissipation patch

312,312A: First primer layer

314,314A: First heat dissipation layer

314a: Side 1

314b:Second side

316,316A: First adhesive layer

318, 318A, 318B: first insulating protective layer

320,320A: Fin structure

322,322A: Fins

400: Second heat dissipation patch

412: Second primer layer

414: Second heat dissipation layer

414a:The third side

414b:The fourth side

416:Second adhesive layer

418: Second insulation protective layer

500: Thermal conductive adhesive layer

CB: Chip bonding area

D1: direction

DS1, DS2, DS3, DS4: heat dissipation structure

UF: underfill material

1A is a schematic top view of a first heat dissipation patch according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view along line a-a' of Fig. 1A. FIG. 2A is a schematic bottom view of a thin film flip-chip packaging structure according to an embodiment of the present invention. Fig. 2B is a schematic cross-sectional view along line a-a' of Fig. 2A. FIG. 3A is a schematic top view of a thin film flip-chip packaging structure according to an embodiment of the present invention. Fig. 3B is a schematic cross-sectional view along line a-a' of Fig. 3A. FIG. 4A is a schematic top view of a first heat dissipation patch according to an embodiment of the present invention. Fig. 4B is a schematic cross-sectional view along line a-a' of Fig. 4A. Figure 5 is a schematic cross-sectional view of a first heat dissipation patch according to an embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a thin film flip-chip packaging structure according to an embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a thin film flip-chip packaging structure according to an embodiment of the present invention.

20: Thin film flip-chip packaging structure

100: Flexible circuit substrate

100a: first surface

100b: Second surface

110: Flexible substrate

120: Wire layer

130: Solder mask

200:wafer

300:The first heat dissipation patch

312: First primer layer

314: First heat dissipation layer

314a: Side 1

314b:Second side

316: First adhesive layer

318: First insulation protective layer

320: Fin structure

DS2: Heat dissipation structure

UF: underfill material

Claims (10)

A thin film chip-on-chip packaging structure, including: a flexible circuit substrate having an opposite first surface and a second surface, the first surface having a chip bonding area; a chip disposed on the first surface and located on the In the chip bonding area, the chip is bonded to the conductive layer of the flexible circuit substrate through bumps; and a heat dissipation structure is provided on at least one of the first surface and the second surface, and corresponds to The chip bonding area includes a first heat dissipation patch. The first heat dissipation patch includes: a first primer layer; a first heat dissipation layer. The first primer layer is attached to the first heat dissipation layer. the first side; and a first insulating protective layer disposed on the second side of the first heat dissipation layer opposite to the first side; wherein the first heat dissipation patch faces the first base glue layer A flexible circuit substrate is disposed on the first surface and covers the chip and part of the flexible circuit substrate, or is disposed on the second surface at a position relative to the wafer bonding area; wherein The first insulating protective layer and the first heat dissipation layer are repeatedly bent to form a fin-shaped structure, or the first heat dissipation patch further includes a fin-shaped structure formed on the first insulating protective layer and including a plurality of heat dissipating rubber strips. structure. The film flip-chip packaging structure according to claim 1, wherein the first heat dissipation patch additionally includes the fin-shaped structure including the heat dissipation rubber strip formed on the first insulating protective layer, wherein the heat dissipation The adhesive strips are arranged at intervals on the first insulating protective layer. The film flip-chip packaging structure according to claim 2, wherein the heat dissipation strips include a plurality of thermally conductive fillers, and the materials of the thermally conductive fillers include metal particles, aluminum oxide, zinc oxide, silicon nitride, aluminum nitride, nitrogen Boron, graphene, carbon nanotubes, carbon nanospheres, silicon dioxide, titanium dioxide, titanium diboride, glass, diamond, diamond powder, silicon carbide, boron carbide, tungsten carbide or combinations thereof. The film flip-chip packaging structure according to claim 1, wherein the fin-shaped structure includes a plurality of fins, the plurality of fins are spaced apart and extend along the long side of the wafer. The film flip-chip packaging structure according to claim 1, wherein the first heat dissipation patch further includes a first adhesive layer, and the first insulating protective layer is attached to the first adhesive layer with the first adhesive layer. The second side of a heat dissipation layer. The film flip-chip packaging structure according to claim 1, wherein the heat dissipation structure further includes a thermal conductive adhesive layer and a second heat dissipation patch, the thermal conductive adhesive layer is formed on the second heat dissipation patch, and the first heat dissipation patch is formed on the second heat dissipation patch. The heat dissipation patch is attached to the thermally conductive adhesive layer, wherein the heat dissipation structure is attached to at least one of the first surface and the second surface of the flexible circuit substrate with the second heat dissipation patch. Above one. The film flip-chip packaging structure according to claim 6, wherein the second heat dissipation patch includes: a second primer layer; a second heat dissipation layer, the second primer layer is attached to the third surface of the second heat dissipation layer; and a second insulating protective layer is disposed opposite the second heat dissipation layer. Side three of side four. The film flip-chip packaging structure according to claim 7, wherein the second heat dissipation patch further includes a second adhesive layer, and the second insulating protective layer is attached to the first adhesive layer with the second adhesive layer. The fourth side of the second heat dissipation layer. The thin film chip-on-chip packaging structure according to claim 6, wherein the thermally conductive adhesive layer is formed by coating and curing liquid thermally conductive adhesive or attaching a dry film thermally conductive adhesive film. The film flip-chip packaging structure according to claim 6, wherein the thermally conductive adhesive layer includes a plurality of thermally conductive fillers, and the materials of the thermally conductive fillers include metal particles, aluminum oxide, zinc oxide, silicon nitride, aluminum nitride, nitrogen Boron, graphene, carbon nanotubes, carbon nanospheres, silicon dioxide, titanium dioxide, titanium diboride, glass, diamond, diamond powder, silicon carbide, boron carbide, tungsten carbide or combinations thereof.

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