TWI832526B - Antistatic protection components - Google Patents
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- TWI832526B TWI832526B TW111141681A TW111141681A TWI832526B TW I832526 B TWI832526 B TW I832526B TW 111141681 A TW111141681 A TW 111141681A TW 111141681 A TW111141681 A TW 111141681A TW I832526 B TWI832526 B TW I832526B
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Abstract
本發明提供一種抗靜電保護元件,其包含基板、第一內電極、第二內電極、抗靜電保護層和阻隔層;其中所述阻隔層包含多孔結構。所述基板具有相對的頂面和底面;第一內電極和第二內電極分別設置於基板的頂面,且第一內電極和第二內電極之間具有一間隔;抗靜電保護層設置於基板的頂面,且位於第一內電極和第二內電極之間,抗靜電保護層分別與第一內電極和第二內電極相接觸。本發明藉由設置阻隔層及調整其配方可降低抗靜電保護元件內部炸裂的風險,並提升抗靜電保護元件的耐靜電衝擊能力。The present invention provides an antistatic protection element, which includes a substrate, a first internal electrode, a second internal electrode, an antistatic protection layer and a barrier layer; wherein the barrier layer contains a porous structure. The substrate has an opposite top surface and a bottom surface; a first internal electrode and a second internal electrode are respectively disposed on the top surface of the substrate, and there is a gap between the first internal electrode and the second internal electrode; an antistatic protective layer is disposed on On the top surface of the substrate, and located between the first internal electrode and the second internal electrode, the antistatic protective layer is in contact with the first internal electrode and the second internal electrode respectively. By setting the barrier layer and adjusting its formula, the present invention can reduce the risk of internal explosion of the anti-static protection element and improve the anti-static shock resistance of the anti-static protection element.
Description
本發明係有關於一種抗靜電保護元件,尤其是用於通訊設備或車用的抗靜電保護元件。The present invention relates to an anti-static protection component, especially an anti-static protection component used in communication equipment or vehicles.
靜電是物體電荷分布不均所產生的自然現象。在現今積體電路微型化的時代,基於配線間隔受到壓縮,電路本身的抗靜電能力亦同步減弱,故面對隨處可見的靜電放電(Electrostatic discharge,ESD)問題,設置抗靜電保護元件之必要性漸獲重視,其中較為常見的抗靜電保護元件包含瞬態電壓抑制二極管和壓敏電阻等,皆是藉由在正常工作電壓時,將呈現高電阻狀態,而於突波、電壓異常或靜電放電等較高電壓出現時,瞬間轉變為低電阻狀態,以將過電流導離受保護的電路,以達到電路保護功效。Static electricity is a natural phenomenon caused by the uneven distribution of charge on an object. In today's era of miniaturization of integrated circuits, due to the compression of wiring intervals, the anti-static ability of the circuit itself is also weakened. Therefore, in the face of the ubiquitous electrostatic discharge (ESD) problem, it is necessary to install anti-static protection components. Gradually gaining attention, the more common anti-static protection components include transient voltage suppression diodes and varistors, etc., which will present a high resistance state at normal operating voltage and will be in a state of high resistance during surges, abnormal voltages or electrostatic discharges. When a higher voltage appears, it instantly changes to a low-resistance state to conduct overcurrent away from the protected circuit to achieve circuit protection.
然而,抗靜電保護元件在面對突波、雷擊或靜電放電等意外情況時,容易導致抗靜電保護元件內部炸裂而喪失電路保護功效,故如何提升抗靜電保護元件的可靠性和耐用度,仍為一有待持續研究的課題。However, when anti-static protection components face unexpected situations such as surges, lightning strikes or electrostatic discharges, they can easily cause internal explosion of the anti-static protection components and lose their circuit protection effect. Therefore, how to improve the reliability and durability of anti-static protection components is still a challenge. It is a subject that requires continued research.
為解決上述課題,本發明提供一種抗靜電保護元件,其包含一基板、一第一內電極、一第二內電極、一抗靜電保護層和一阻隔層;其中,所述基板具有相對的一頂面和一底面;所述第一內電極和所述第二內電極分別設置於所述基板的頂面,且所述第一內電極和所述第二內電極之間具有一間隔;所述抗靜電保護層設置於所述基板的頂面,且位於所述第一內電極和所述第二內電極之間;所述抗靜電保護層分別與所述第一內電極和所述第二內電極相接觸;以及所述阻隔層覆蓋所述抗靜電保護層;其中,所述抗靜電保護層的燒成溫度(Firing temperature)高於所述阻隔層的燒成溫度,且所述阻隔層包含多孔結構。In order to solve the above problems, the present invention provides an antistatic protection element, which includes a substrate, a first internal electrode, a second internal electrode, an antistatic protection layer and a barrier layer; wherein, the substrate has an opposite a top surface and a bottom surface; the first internal electrode and the second internal electrode are respectively disposed on the top surface of the substrate, and there is a gap between the first internal electrode and the second internal electrode; The antistatic protective layer is disposed on the top surface of the substrate and is located between the first internal electrode and the second internal electrode; the antistatic protective layer is respectively connected with the first internal electrode and the third internal electrode. Two internal electrodes are in contact; and the barrier layer covers the antistatic protective layer; wherein the firing temperature of the antistatic protective layer is higher than the firing temperature of the barrier layer, and the barrier layer The layer contains a porous structure.
本發明透過設置包含多孔結構的阻隔層來降低抗靜電保護元件內部炸裂的風險,並且,藉由限制所述抗靜電保護層的燒成溫度和所述阻隔層的燒成溫度之間的關係,避免抗靜電保護層於阻隔層的燒結過程中受到破壞,進而提升本發明之抗靜電保護元件的可靠性和耐用度。The present invention reduces the risk of internal explosion of the antistatic protective element by providing a barrier layer containing a porous structure, and by limiting the relationship between the firing temperature of the antistatic protective layer and the firing temperature of the barrier layer, This prevents the antistatic protective layer from being damaged during the sintering process of the barrier layer, thereby improving the reliability and durability of the antistatic protective component of the present invention.
依據本發明,所述抗靜電保護層的燒成溫度係指所述抗靜電保護層能承受或適合的燒成溫度高於所述阻隔層能承受或適合的燒成溫度。所述燒成溫度係指燒結過程中,加熱系統所達到的最高溫度。According to the present invention, the firing temperature of the antistatic protective layer means that the firing temperature that the antistatic protective layer can withstand or is suitable for is higher than the firing temperature that the barrier layer can withstand or is suitable for. The sintering temperature refers to the highest temperature reached by the heating system during the sintering process.
較佳的,所述阻隔層包含多孔結構係指所述阻隔層為一多孔性燒結體。Preferably, the barrier layer containing a porous structure means that the barrier layer is a porous sintered body.
在一些實施態樣中,所述第一內電極和所述第二內電極各自包含銀、鈀或其組合。In some implementations, the first internal electrode and the second internal electrode each include silver, palladium, or a combination thereof.
依據本發明,所述第一內電極具有相對的一第一面與一第二面,且所述第一內電極的第一面遠離所述基板;所述抗靜電保護層具有相對的一第一面與一第二面,且所述抗靜電保護層的第一面遠離所述基板;以及所述第二內電極具有相對的一第一面與一第二面,且所述第二內電極的第一面遠離所述基板。According to the present invention, the first internal electrode has an opposite first surface and a second surface, and the first surface of the first internal electrode is away from the substrate; the antistatic protective layer has an opposite first surface. One side and a second side, and the first side of the antistatic protective layer is away from the substrate; and the second inner electrode has an opposite first side and a second side, and the second inner electrode The first side of the electrode is away from the substrate.
在一些實施態樣中,所述第一內電極和所述第二內電極分別設於所述基板的頂面的相對兩端。In some embodiments, the first internal electrode and the second internal electrode are respectively provided at opposite ends of the top surface of the substrate.
在一些實施態樣中,所述抗靜電保護層覆蓋所述第一內電極和所述第二內電極。較佳的,所述抗靜電保護層的第二面覆蓋所述第一內電極的第一面以及所述第二內電極的第一面。更佳的,所述抗靜電保護層的第二面覆蓋所述第一內電極的第一面的部分面積以及所述第二內電極的第一面的部分面積。In some implementations, the antistatic protective layer covers the first internal electrode and the second internal electrode. Preferably, the second surface of the antistatic protective layer covers the first surface of the first internal electrode and the first surface of the second internal electrode. More preferably, the second surface of the antistatic protective layer covers part of the first surface of the first internal electrode and part of the first surface of the second internal electrode.
較佳的,所述第一內電極的第一面的總面積包含所有未與所述基板直接接觸的表面積,以及所述第一內電極的第二面的總面積包含所述第一內電極與所述基板直接接觸的所述面的輪廓面積。Preferably, the total area of the first surface of the first internal electrode includes all surface areas not in direct contact with the substrate, and the total area of the second surface of the first internal electrode includes the first internal electrode. The contour area of the surface in direct contact with the substrate.
較佳的,所述第二內電極的第一面的總面積包含所有未與所述基板直接接觸的表面積,以及所述第二內電極的第二面的總面積包含所述第二內電極與所述基板直接接觸的所述面的輪廓面積。Preferably, the total area of the first surface of the second internal electrode includes all surface areas not in direct contact with the substrate, and the total area of the second surface of the second internal electrode includes the second internal electrode. The contour area of the surface in direct contact with the substrate.
所述「輪廓面積」係依據所述面的外輪廓,例如:邊長1公分*1公分=1平方公分來計算。The "contour area" is calculated based on the outer contour of the surface, for example: side length 1 cm * 1 cm = 1 square centimeter.
較佳的,所述抗靜電保護層的第一面的總面積包含所有未與所述基板直接接觸的表面積。Preferably, the total area of the first surface of the antistatic protective layer includes all surface areas not in direct contact with the substrate.
較佳的,所述抗靜電保護層的第二面的總面積係指所述抗靜電保護層的第一面投影至所述抗靜電保護層的第二面(即所述基板的頂面)的投影面積。更佳的,所述投影面積係沿與所述抗靜電保護層的第二面(即所述基板的頂面)垂直之方向,將所述抗靜電保護層的第一面投影至所述抗靜電保護層的第二面。Preferably, the total area of the second surface of the antistatic protective layer refers to the projection of the first surface of the antistatic protective layer to the second surface of the antistatic protective layer (ie, the top surface of the substrate) the projected area. More preferably, the projection area is along a direction perpendicular to the second surface of the antistatic protective layer (ie, the top surface of the substrate), and projects the first surface of the antistatic protective layer to the antistatic surface. The second side of the electrostatic protective layer.
較佳的,以所述第一內電極的第二面的總面積為基準,所述抗靜電保護層的第二面覆蓋所述第一內電極的第一面投影至所述第一內電極的第二面(即所述基板的頂面)的投影面積占3%至30%,例如:3%、5%、10%、15%、20%、25%或30%。更佳的,所述投影面積係沿與所述第一內電極的第二面垂直之方向,將所述抗靜電保護層的第二面覆蓋所述第一內電極的第一面投影至所述第一內電極的第二面。Preferably, based on the total area of the second surface of the first internal electrode, the second surface of the antistatic protective layer covers the first surface of the first internal electrode and is projected to the first internal electrode. The projected area of the second surface (ie, the top surface of the substrate) accounts for 3% to 30%, for example: 3%, 5%, 10%, 15%, 20%, 25% or 30%. More preferably, the projection area is along a direction perpendicular to the second surface of the first internal electrode, so that the second surface of the antistatic protective layer covering the first surface of the first internal electrode is projected to the the second side of the first internal electrode.
較佳的,以所述第二內電極的第二面的總面積為基準,所述抗靜電保護層的第二面覆蓋所述第二內電極的第一面投影至所述第二內電極的第二面的投影面積占3%至30%,例如:3%、5%、10%、15%、20%、25%或30%。更佳的,所述投影面積係沿與所述第二內電極的第二面(即所述基板的頂面)垂直之方向,將所述抗靜電保護層的第二面覆蓋所述第二內電極的第一面投影至所述第二內電極的第二面。Preferably, based on the total area of the second surface of the second internal electrode, the second surface of the antistatic protective layer covers the first surface of the second internal electrode and is projected to the second internal electrode. The projected area of the second side accounts for 3% to 30%, for example: 3%, 5%, 10%, 15%, 20%, 25% or 30%. More preferably, the projected area is along a direction perpendicular to the second surface of the second internal electrode (ie, the top surface of the substrate), and the second surface of the antistatic protective layer covers the second surface of the second inner electrode. The first side of the internal electrode projects onto the second side of the second internal electrode.
在一些實施態樣中,所述第一內電極的第一面為頂面,所述第二內電極的第一面為頂面,且所述抗靜電保護層的第二面覆蓋所述第一內電極的頂面的部分面積以及所述第二內電極的頂面的部分面積。In some embodiments, the first surface of the first internal electrode is the top surface, the first surface of the second internal electrode is the top surface, and the second surface of the antistatic protective layer covers the third surface. A partial area of the top surface of one internal electrode and a partial area of the top surface of the second internal electrode.
本發明藉由使所述抗靜電保護層分別增加與所述第一內電極和所述第二內電極的接觸面積,以提升所述抗靜電保護元件的充、放電效能,進而提升本發明抗靜電保護元件的抗靜電保護功效。The present invention improves the charging and discharging performance of the antistatic protection element by increasing the contact area of the antistatic protective layer with the first internal electrode and the second internal electrode, thereby improving the antistatic protection layer of the present invention. Anti-static protection effect of electrostatic protection components.
在另一些實施態樣中,所述抗靜電保護層覆蓋所述第一內電極,且所述第二內電極覆蓋所述抗靜電保護層。具體而言,所述抗靜電保護層的第二面覆蓋所述第一內電極的第一面,所述第二內電極的第二面覆蓋所述抗靜電保護層的第一面。較佳的,所述抗靜電保護層的第二面覆蓋所述第一內電極的第一面的部分面積,所述第二內電極的第二面覆蓋所述抗靜電保護層的第一面的部分面積。In other embodiments, the antistatic protective layer covers the first internal electrode, and the second internal electrode covers the antistatic protective layer. Specifically, the second surface of the antistatic protective layer covers the first surface of the first internal electrode, and the second surface of the second internal electrode covers the first surface of the antistatic protective layer. Preferably, the second surface of the antistatic protective layer covers part of the first surface of the first internal electrode, and the second surface of the second internal electrode covers the first surface of the antistatic protective layer. part of the area.
本發明藉由使所述抗靜電保護層延伸至所述第一內電極的第一面,且所述第二內電極延伸至所述抗靜電保護層的第一面,來進一步提升所述抗靜電保護層與所述第一內電極和所述第二內電極的接觸面積。較佳的,所述抗靜電保護層的第二面延伸至所述第一內電極的第一面,且所述第二內電極的第二面延伸至所述抗靜電保護層的第一面。The present invention further improves the anti-static protection layer by extending the anti-static protective layer to the first surface of the first internal electrode, and the second internal electrode extends to the first surface of the anti-static protective layer. The contact area between the electrostatic protective layer and the first internal electrode and the second internal electrode. Preferably, the second surface of the antistatic protective layer extends to the first surface of the first internal electrode, and the second surface of the second internal electrode extends to the first surface of the antistatic protective layer. .
較佳的,以所述抗靜電保護層的第二面的總面積為基準,所述第二內電極的第二面覆蓋所述抗靜電保護層的第一面投影至所述抗靜電保護層的第二面的投影面積占10%至70%,例如:10%、20%、30%、40%、50%、60%或70%。更佳的,所述投影面積係沿與所述抗靜電保護層的第二面(即所述基板的頂面)垂直之方向,將所述第二內電極的第二面覆蓋所述抗靜電保護層的第一面投影至所述抗靜電保護層的第二面。Preferably, based on the total area of the second surface of the antistatic protective layer, the second surface of the second internal electrode covers the first surface of the antistatic protective layer and is projected to the antistatic protective layer. The projected area of the second side accounts for 10% to 70%, for example: 10%, 20%, 30%, 40%, 50%, 60% or 70%. More preferably, the projected area is along a direction perpendicular to the second surface of the antistatic protective layer (ie, the top surface of the substrate), covering the second surface of the second internal electrode with the antistatic layer. The first side of the protective layer projects onto the second side of the antistatic protective layer.
在一些實施態樣中,所述第一內電極的第一面為頂面,所述抗靜電保護層的第一面為頂面,所述第二內電極的第一面為頂面,且所述抗靜電保護層的第二面覆蓋所述第一內電極的頂面的部分面積,以及所述第二內電極的第二面覆蓋所述抗靜電保護層的頂面的部分面積。In some embodiments, the first surface of the first internal electrode is the top surface, the first surface of the antistatic protective layer is the top surface, the first surface of the second internal electrode is the top surface, and The second surface of the antistatic protective layer covers a partial area of the top surface of the first internal electrode, and the second surface of the second internal electrode covers a partial area of the top surface of the antistatic protective layer.
在一些實施態樣中,所述阻隔層包含陶瓷材料及第一玻璃材料。In some implementations, the barrier layer includes a ceramic material and a first glass material.
較佳的,以所述阻隔層的總重為基準,所述陶瓷材料的含量大於50重量百分比。更佳的,以所述阻隔層的總重為基準,所述陶瓷材料的含量為大於50重量百分比且小於或等於83重量百分比,例如:50.1重量百分比、50.5重量百分比、51重量百分比、55重量百分比、60重量百分比、65重量百分比、70重量百分比、75重量百分比、80重量百分比或83重量百分比。較佳的,所述第一玻璃材料的含量為大於或等於17重量百分比且小於50重量百分比,例如:17重量百分比、20重量百分比、25重量百分比、30重量百分比、35重量百分比、40重量百分比、45重量百分比、49重量百分比、49.5重量百分比或49.9重量百分比。Preferably, based on the total weight of the barrier layer, the content of the ceramic material is greater than 50 weight percent. More preferably, based on the total weight of the barrier layer, the content of the ceramic material is greater than 50 weight percent and less than or equal to 83 weight percent, for example: 50.1 weight percent, 50.5 weight percent, 51 weight percent, 55 weight percent. percent, 60 weight percent, 65 weight percent, 70 weight percent, 75 weight percent, 80 weight percent or 83 weight percent. Preferably, the content of the first glass material is greater than or equal to 17 weight percent and less than 50 weight percent, for example: 17 weight percent, 20 weight percent, 25 weight percent, 30 weight percent, 35 weight percent, 40 weight percent. , 45 weight percent, 49 weight percent, 49.5 weight percent or 49.9 weight percent.
依據本發明,當所述阻隔層所含陶瓷材料的含量大於所述第一玻璃材料的含量時,本發明的抗靜電保護元件的耐靜電衝擊次數可顯著提升,亦降低本發明的抗靜電保護元件發生內部炸裂的風險,進一步提升抗靜電保護元件的可靠性和耐用度。According to the present invention, when the content of the ceramic material contained in the barrier layer is greater than the content of the first glass material, the number of times of anti-static shock resistance of the anti-static protection element of the present invention can be significantly improved, and the anti-static protection element of the present invention can also be reduced. The risk of internal explosion of components further enhances the reliability and durability of anti-static protection components.
在一些實施態樣中,所述陶瓷材料包含氧化鋁、碳化矽、氮化矽和氮化鋁之任一或其組合。In some embodiments, the ceramic material includes any one or a combination of aluminum oxide, silicon carbide, silicon nitride, and aluminum nitride.
依據本發明,基於所述阻隔層所含陶瓷材料的熔點明顯比第一玻璃材料的軟化點高,而可於燒結過程中承受較高的溫度,而不影響所述阻隔層的功效,故所述阻隔層能承受或適合的燒成溫度係依第一玻璃材料的軟化點而定,且所述阻隔層能承受或適合的燒成溫度相較於所述第一玻璃材料的軟化點高出10 ○C至100 ○C,例如:10 ○C、25 ○C、50 ○C、75 ○C或100 ○C。此外,所述阻隔層能承受或適合的燒成溫度可另依所述第一玻璃材料的玻璃轉化溫度(glass transition temperature,Tg)、轉變點(transformation point)或變形點(deformation point)而定。 According to the present invention, the ceramic material contained in the barrier layer has a melting point significantly higher than the softening point of the first glass material and can withstand higher temperatures during the sintering process without affecting the efficacy of the barrier layer. The firing temperature that the barrier layer can withstand or is suitable for depends on the softening point of the first glass material, and the firing temperature that the barrier layer can withstand or is suitable for is higher than the softening point of the first glass material. 10 ○ C to 100 ○ C, for example: 10 ○ C, 25 ○ C, 50 ○ C, 75 ○ C or 100 ○ C. In addition, the firing temperature that the barrier layer can withstand or is suitable for may be determined by the glass transition temperature (Tg), transformation point or deformation point of the first glass material. .
在一實施態樣中,所述阻隔層的燒成溫度為400 ○C至550 ○C,例如:400 ○C、430 ○C、460 ○C、470 ○C、490 ○C、520 ○C或550 ○C;較佳的,所述阻隔層的燒成溫度為450 ○C至510 ○C;更佳的,所述阻隔層的燒成溫度為480 ○C至500 ○C。 In an embodiment, the firing temperature of the barrier layer is 400 ○ C to 550 ○ C, such as: 400 ○ C, 430 ○ C, 460 ○ C, 470 ○ C, 490 ○ C, 520 ○ C or 550 ○ C; preferably, the firing temperature of the barrier layer is 450 ○ C to 510 ○ C; more preferably, the firing temperature of the barrier layer is 480 ○ C to 500 ○ C.
在一實施態樣中,所述阻隔層所含第一玻璃材料的軟化點為350 ○C至 540 ○C,例如:350 ○C、400 ○C、450 ○C、500 ○C或540 ○C;較佳的,所述第一玻璃材料的軟化點為420 ○C至445 ○C;更佳的,所述第一玻璃材料的軟化點為430 ○C至436 ○C。 In an embodiment, the first glass material contained in the barrier layer has a softening point of 350 ○ C to 540 ○ C, such as: 350 ○ C, 400 ○ C, 450 ○ C, 500 ○ C or 540 ○ C ; Preferably, the softening point of the first glass material is 420 ○ C to 445 ○ C; more preferably, the softening point of the first glass material is 430 ○ C to 436 ○ C.
在一實施態樣中,所述阻隔層所含第一玻璃材料的玻璃轉化溫度為350 ○C至375 ○C,例如:350 ○C、355 ○C、360 ○C、365 ○C、370 ○C或375 ○C;較佳的,所述第一玻璃材料的玻璃轉化溫度為360 ○C至366 ○C。 In one implementation, the glass transition temperature of the first glass material contained in the barrier layer is 350 ○ C to 375 ○ C, for example: 350 ○ C, 355 ○ C, 360 ○ C, 365 ○ C, 370 ○ C or 375 ○ C; preferably, the glass transition temperature of the first glass material is 360 ○ C to 366 ○ C.
在一實施態樣中,所述阻隔層的燒結溫度(sintering temperature)為360 ○C至550 ○C,例如:360 ○C、400 ○C、430 ○C、460 ○C、490 ○C、520 ○C或550 ○C;較佳的,所述阻隔層的燒結溫度為360 ○C至510 ○C;更佳的,所述阻隔層的燒結溫度為400 ○C至510 ○C。 In an embodiment, the sintering temperature of the barrier layer is 360 ○ C to 550 ○ C, for example: 360 ○ C, 400 ○ C, 430 ○ C, 460 ○ C, 490 ○ C, 520 ○ C or 550 ○ C; preferably, the sintering temperature of the barrier layer is 360 ○ C to 510 ○ C; more preferably, the sintering temperature of the barrier layer is 400 ○ C to 510 ○ C.
依據本發明,燒結溫度的上下限值係指燒結過程中,加熱系統所達到的最高溫度和最低溫度。According to the present invention, the upper and lower limits of the sintering temperature refer to the highest temperature and the lowest temperature reached by the heating system during the sintering process.
在一些實施態樣中,所述阻隔層所含第一玻璃材料包含三氧化二鉍(Bi 2O 3)、三氧化二硼(B 2O 3)和氧化鋅(ZnO)。較佳的,以所述阻隔層所含第一玻璃材料的總重為基準,三氧化二鉍的含量為70重量百分比至90重量百分比,例如:70重量百分比、73重量百分比、75重量百分比、78重量百分比、81重量百分比、84重量百分比、87重量百分比或90重量百分比;三氧化二硼的含量為1重量百分比至15重量百分比,例如:1重量百分比、3重量百分比、5重量百分比、7重量百分比、9重量百分比、12重量百分比或15重量百分比;以及氧化鋅的含量為1重量百分比至15重量百分比,例如:1重量百分比、3重量百分比、5重量百分比、7重量百分比、9重量百分比、12重量百分比或15重量百分比。 In some embodiments, the first glass material contained in the barrier layer includes bismuth trioxide (Bi 2 O 3 ), boron trioxide (B 2 O 3 ), and zinc oxide (ZnO). Preferably, based on the total weight of the first glass material contained in the barrier layer, the content of bismuth trioxide is 70 to 90 weight percent, for example: 70 weight percent, 73 weight percent, 75 weight percent, 78% by weight, 81% by weight, 84% by weight, 87% by weight or 90% by weight; the content of boron trioxide is 1% by weight to 15% by weight, for example: 1% by weight, 3% by weight, 5% by weight, 7 weight percent, 9 weight percent, 12 weight percent or 15 weight percent; and the content of zinc oxide is 1 weight percent to 15 weight percent, for example: 1 weight percent, 3 weight percent, 5 weight percent, 7 weight percent, 9 weight percent , 12 weight percent or 15 weight percent.
在一些實施態樣中,所述阻隔層進一步包含玻璃纖維。較佳的,所述玻璃纖維的長度為100微米至200微米。所述阻隔層包含玻璃纖維可進一步降低所述抗靜電保護元件內部炸裂的風險。In some embodiments, the barrier layer further includes glass fibers. Preferably, the length of the glass fiber is 100 microns to 200 microns. The inclusion of glass fiber in the barrier layer can further reduce the risk of internal explosion of the antistatic protection element.
在一些實施態樣中,所述抗靜電保護層包含金屬、金屬碳化物及填料。In some embodiments, the antistatic protective layer includes metal, metal carbide, and filler.
在一些實施態樣中,所述金屬包含鈀、銀、鉑和金之任一或其組合。In some embodiments, the metal includes any one or a combination of palladium, silver, platinum, and gold.
在一些實施態樣中,所述金屬碳化物包含碳化鐵、碳化鎳、碳化鈦、碳化鎢、碳化鋯、碳化鉻和碳化釩之任一或其組合。In some embodiments, the metal carbide includes any one of iron carbide, nickel carbide, titanium carbide, tungsten carbide, zirconium carbide, chromium carbide and vanadium carbide or a combination thereof.
在一些實施態樣中,所述填料包含第二玻璃材料。In some embodiments, the filler includes a second glass material.
依據本發明,當所述阻隔層和所述抗靜電保護層皆包含適量之玻璃成分,可進一步提升所述阻隔層與所述抗靜電保護層之間的附著力,而可提升本發明抗靜電保護元件的結構強度來降低擊穿率,以提升本發明抗靜電保護元件的耐靜電衝擊能力、可靠性和耐用度。According to the present invention, when both the barrier layer and the antistatic protective layer contain an appropriate amount of glass components, the adhesion between the barrier layer and the antistatic protective layer can be further improved, thereby improving the antistatic properties of the present invention. The structural strength of the protection element is used to reduce the breakdown rate, so as to improve the anti-static shock resistance, reliability and durability of the anti-static protection element of the present invention.
依據本發明,基於所述抗靜電保護層所含金屬和金屬碳化物的熔點明顯比第二玻璃材料的軟化點高,而可於燒結過程中承受較高的溫度,而不影響所述抗靜電保護層的功效,故所述抗靜電保護層能承受或適合的燒成溫度係依第二玻璃材料的軟化點而定,且所述抗靜電保護層能承受或適合的燒成溫度相較於所述第二玻璃材料的軟化點高出10 ○C至100 ○C,例如:10 ○C、25 ○C、50 ○C、75 ○C或100 ○C。此外,所述抗靜電保護層能承受或適合的燒成溫度可另依第二玻璃材料的玻璃轉化溫度、轉變點或變形點而定。 According to the present invention, the melting point of the metal and metal carbide contained in the antistatic protective layer is significantly higher than the softening point of the second glass material, and can withstand higher temperatures during the sintering process without affecting the antistatic layer. The function of the protective layer, so the firing temperature that the antistatic protective layer can withstand or is suitable for depends on the softening point of the second glass material, and the firing temperature that the antistatic protective layer can withstand or is suitable for is compared to The softening point of the second glass material is 10 ○ C to 100 ○ C higher, for example: 10 ○ C, 25 ○ C, 50 ○ C, 75 ○ C or 100 ○ C. In addition, the firing temperature that the antistatic protective layer can withstand or is suitable for may be determined by the glass transition temperature, transition point or deformation point of the second glass material.
換句話說,所述抗靜電保護層的燒成溫度高於所述阻隔層的燒成溫度可替換為所述抗靜電保護層所含填料中的第二玻璃材料的軟化點、玻璃轉化溫度、轉變點或變形點高於所述阻隔層所含第一玻璃材料的軟化點、玻璃轉化溫度、轉變點或變形點。In other words, the firing temperature of the antistatic protective layer is higher than the firing temperature of the barrier layer, which can be replaced by the softening point, glass transition temperature, The transition point or deformation point is higher than the softening point, glass transition temperature, transition point or deformation point of the first glass material contained in the barrier layer.
在一實施態樣中,所述抗靜電保護層的燒成溫度為650 ○C至750 ○C,例如:650 ○C、670 ○C、690 ○C、710 ○C、730 ○C或750 ○C;較佳的,所述抗靜電保護層的燒成溫度為680 ○C至720 ○C;更佳的,所述抗靜電保護層的燒成溫度為695 ○C至705 ○C。 In an embodiment, the firing temperature of the antistatic protective layer is 650 ○ C to 750 ○ C, such as: 650 ○ C, 670 ○ C, 690 ○ C, 710 ○ C, 730 ○ C or 750 ○ C; Preferably, the firing temperature of the antistatic protective layer is 680 ○ C to 720 ○ C; More preferably, the firing temperature of the antistatic protective layer is 695 ○ C to 705 ○ C.
在一實施態樣中,所述填料所含第二玻璃材料的轉變點為560 ○C至740 ○C,例如:560 ○C、590 ○C、620 ○C、650 ○C、680 ○C、710 ○C或740 ○C;較佳的,所述填料所含第二玻璃材料的轉變點為570 ○C至640 ○C;更佳的,所述填料所含第二玻璃材料的轉變點為587 ○C至627 ○C。 In one embodiment, the transition point of the second glass material contained in the filler is 560 ○ C to 740 ○ C, for example: 560 ○ C, 590 ○ C, 620 ○ C, 650 ○ C, 680 ○ C, 710 ○ C or 740 ○ C; preferably, the transition point of the second glass material contained in the filler is 570 ○ C to 640 ○ C; more preferably, the transition point of the second glass material contained in the filler is 587 ○ C to 627 ○ C.
在一實施態樣中,所述填料所含第二玻璃材料的變形點為600 ○C至740 ○C,例如:600 ○C、620 ○C、650 ○C、680 ○C、710 ○C或740 ○C;較佳的,所述填料所含第二玻璃材料的變形點為667 ○C至707 ○C。 In an embodiment, the second glass material contained in the filler has a deformation point of 600 ○ C to 740 ○ C, such as: 600 ○ C, 620 ○ C, 650 ○ C, 680 ○ C, 710 ○ C or 740 ○ C; preferably, the deformation point of the second glass material contained in the filler is 667 ○ C to 707 ○ C.
依據本發明,所述填料所含第二玻璃材料的轉變點最低為560 ○C,以及變形點最低為600 ○C,故後續針對所述阻隔層進行燒結時,因所述阻隔層的燒成溫度最高為550 ○C,故不會再實質影響抗靜電保護層的結構和功效。 According to the present invention, the transition point of the second glass material contained in the filler is at least 560 ○ C, and the deformation point is at least 600 ○ C. Therefore, when the barrier layer is subsequently sintered, due to the sintering of the barrier layer The maximum temperature is 550 ○ C, so it will no longer substantially affect the structure and efficacy of the antistatic protective layer.
在一實施態樣中,所述抗靜電保護層的燒結溫度為400 ○C至750 ○C,例如:400 ○C、450 ○C、500 ○C、550 ○C、600 ○C、650 ○C、700 ○C或750 ○C;較佳的,述抗靜電保護層的燒結溫度為400 ○C至700 ○C。 In an embodiment, the sintering temperature of the antistatic protective layer is 400 ○ C to 750 ○ C, for example: 400 ○ C, 450 ○ C, 500 ○ C, 550 ○ C, 600 ○ C, 650 ○ C , 700 ○ C or 750 ○ C; preferably, the sintering temperature of the antistatic protective layer is 400 ○ C to 700 ○ C.
較佳的,所述填料所含第二玻璃材料的線膨脹係數為5.6*10 -6/ ○C至6.4*10 -6/ ○C。 Preferably, the linear expansion coefficient of the second glass material contained in the filler is 5.6*10 -6 / ○ C to 6.4*10 -6 / ○ C.
在一些實施態樣中,所述填料所含第二玻璃材料包含氧化鋅(ZnO)、氧化鋁(Al 2O 3)、二氧化矽(SiO 2)和碳酸鈣(CaCO 3)。 In some embodiments, the second glass material contained in the filler includes zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), and calcium carbonate (CaCO 3 ).
在一些實施態樣中,以所述抗靜電保護層的總重為基準,所述金屬的含量為10重量百分比至20重量百分比,例如:10重量百分比、13重量百分比、15重量百分比、18重量百分比或20重量百分比;所述金屬碳化物的含量為50重量百分比至70重量百分比,例如:50重量百分比、55重量百分比、60重量百分比、65重量百分比或70重量百分比;以及所述填料的含量為20重量百分比至30重量百分比,例如:20重量百分比、23重量百分比、25重量百分比、28重量百分比或30重量百分比。In some embodiments, based on the total weight of the antistatic protective layer, the content of the metal is 10 to 20 weight percent, for example: 10 weight percent, 13 weight percent, 15 weight percent, 18 weight percent percentage or 20 weight percent; the content of the metal carbide is 50 to 70 weight percent, for example: 50 weight percent, 55 weight percent, 60 weight percent, 65 weight percent or 70 weight percent; and the content of the filler It is 20 weight percent to 30 weight percent, for example: 20 weight percent, 23 weight percent, 25 weight percent, 28 weight percent or 30 weight percent.
在一些實施態樣中,本發明的抗靜電保護元件進一步包含至少一絕緣保護層,且所述至少一絕緣保護層覆蓋所述阻隔層;其中,所述至少一絕緣保護層包含第三玻璃材料或高分子材料,以進一步降低抗靜電保護元件內部炸裂的風險。In some embodiments, the antistatic protection element of the present invention further includes at least one insulating protective layer, and the at least one insulating protective layer covers the barrier layer; wherein the at least one insulating protective layer includes a third glass material Or polymer materials to further reduce the risk of internal explosion of anti-static protection components.
較佳的,所述至少一絕緣保護層包含一第一絕緣保護層和一第二絕緣保護層;所述第一絕緣保護層覆蓋所述阻隔層;以及所述第二絕緣保護層覆蓋所述第一絕緣保護層。Preferably, the at least one insulating protective layer includes a first insulating protective layer and a second insulating protective layer; the first insulating protective layer covers the barrier layer; and the second insulating protective layer covers the The first insulating protective layer.
在一些實施態樣中,所述第一絕緣保護層包含第三玻璃材料。In some implementations, the first insulating protective layer includes a third glass material.
較佳的,所述第一絕緣保護層所含的第三玻璃材料,包含氧化鋅(ZnO)、氧化鋁(Al 2O 3)、二氧化矽(SiO 2)和碳酸鈣(CaCO 3)。 Preferably, the third glass material contained in the first insulating protective layer includes zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ) and calcium carbonate (CaCO 3 ).
依據本發明,所述阻隔層可有效降低第一絕緣保護層出現炸裂的風險。此外,當所述阻隔層包含適量之玻璃成分,可進一步提升所述阻隔層與所述第一絕緣保護層之間的附著力,而可提升本發明抗靜電保護元件的結構強度來降低擊穿率,以提升本發明抗靜電保護元件的耐靜電衝擊能力、可靠性和耐用度。According to the present invention, the barrier layer can effectively reduce the risk of bursting of the first insulating protective layer. In addition, when the barrier layer contains an appropriate amount of glass components, the adhesion between the barrier layer and the first insulating protective layer can be further improved, and the structural strength of the antistatic protection element of the present invention can be improved to reduce breakdown. efficiency to improve the anti-static impact resistance, reliability and durability of the anti-static protection component of the present invention.
在一些實施態樣中,所述第二絕緣保護層包含高分子材料。較佳的,所述高分子材料包含環氧樹脂、矽氧樹脂和酚醛樹脂之任一或其組合。In some implementations, the second insulating protective layer includes a polymer material. Preferably, the polymer material includes any one of epoxy resin, silicone resin and phenolic resin or a combination thereof.
在一些實施態樣中,本發明的抗靜電保護元件進一步包含一第一外電極和一第二外電極;其中,所述第一外電極和所述第二外電極分別設置於所述基板的相對兩側面,且所述第一外電極與所述第一內電極電性連接,且所述第二外電極與所述第二內電極電性連接。In some embodiments, the antistatic protection component of the present invention further includes a first external electrode and a second external electrode; wherein the first external electrode and the second external electrode are respectively disposed on the substrate. On opposite sides, the first external electrode is electrically connected to the first internal electrode, and the second external electrode is electrically connected to the second internal electrode.
在一些實施態樣中,所述第一外電極和所述第二外電極各自包含銀、鎳和錫之任一或其組合。In some embodiments, the first external electrode and the second external electrode each include any one or a combination of silver, nickel, and tin.
綜上,本發明透過設置包含多孔結構的阻隔層及調整其配方來降低抗靜電保護元件內部炸裂的風險,並藉由限制所述抗靜電保護層的燒成溫度和所述阻隔層的燒成溫度之間的關係,避免抗靜電保護層於阻隔層的燒結過程中受到破壞,進而提升本發明之抗靜電保護元件的可靠性和耐用度。此外,當所述抗靜電保護層、所述阻隔層和所述第一絕緣保護層皆包含適量之玻璃成分,可進一步提升所述抗靜電保護層、所述阻隔層與所述第一絕緣保護層之間的附著力,而可提升本發明抗靜電保護元件的結構強度來降低擊穿率,以提升本發明抗靜電保護元件的耐靜電衝擊能力、可靠性和耐用度。In summary, the present invention reduces the risk of internal explosion of the antistatic protection element by providing a barrier layer containing a porous structure and adjusting its formula, and by limiting the firing temperature of the antistatic protective layer and the firing temperature of the barrier layer The relationship between temperatures prevents the antistatic protective layer from being damaged during the sintering process of the barrier layer, thereby improving the reliability and durability of the antistatic protective element of the present invention. In addition, when the antistatic protective layer, the barrier layer and the first insulating protective layer all contain an appropriate amount of glass components, the antistatic protective layer, the barrier layer and the first insulating protective layer can be further improved. The adhesion between the layers can improve the structural strength of the anti-static protection component of the present invention to reduce the breakdown rate, thereby improving the anti-static shock resistance, reliability and durability of the anti-static protection component of the present invention.
以下提供數種實施例說明本發明之實施方式;熟習此技藝者可經由本說明書之內容輕易地了解本發明所能達成之優點與功效,並且於不悖離本發明之精神下進行各種修飾與變更,以施行或應用本發明之內容。Several examples are provided below to illustrate the implementation of the present invention; those skilled in the art can easily understand the advantages and effects achieved by the present invention through the content of this specification, and can make various modifications and improvements without departing from the spirit of the present invention. Modifications to implement or apply the contents of the present invention.
實施例1:抗靜電保護元件Example 1: Antistatic protection component
如圖1所示,抗靜電保護元件1包含一基板10、一第一內電極11、一第二內電極12、一抗靜電保護層13和一阻隔層14。所述基板10具有相對的一頂面100和一底面101;所述第一內電極11和所述第二內電極12分別設置於所述基板10的頂面100,且所述第一內電極11和所述第二內電極12彼此之間具有一間隔;所述抗靜電保護層13設置於所述基板10的頂面100,且位於所述第一內電極11和所述第二內電極12之間(即設置於前述間隔中),並與所述第一內電極11和所述第二內電極12直接接觸;所述阻隔層14完全覆蓋所述抗靜電保護層13。此外,所述抗靜電保護層13的燒成溫度高於所述阻隔層14的燒成溫度,以及所述阻隔層14包含多孔結構。As shown in FIG. 1 , the antistatic protection component 1 includes a
實施例2:抗靜電保護元件Example 2: Antistatic protection component
圖2的抗靜電保護元件1與圖1的抗靜電保護元件1相似,主要差異在於第一內電極11、第二內電極12以及抗靜電保護層13的位置關係不同。具體而言,如圖2所示,在抗靜電保護元件1中,所述第一內電極11具有相對的一第一面110與一第二面111,且所述第一內電極11的第一面110遠離所述基板10,所述第一內電極11的第二面111則與基板10的頂面100直接接觸;所述第二內電極12具有相對的一第一面120與一第二面121,且所述第二內電極12的第一面120遠離所述基板10,所述第二內電極12的第二面121則與基板10的頂面100直接接觸;所述抗靜電保護層13具有相對的一第一面130與一第二面131,且所述抗靜電保護層13的第一面130遠離所述基板10,所述抗靜電保護層13的第二面131與所述基板10的頂面100直接接觸。The antistatic protection element 1 in FIG. 2 is similar to the antistatic protection element 1 in FIG. 1 . The main difference lies in the positional relationship between the first
所述抗靜電保護層13的第二面131覆蓋部分的所述第一內電極11的第一面110(即頂面)。所述第二內電極12的第二面121覆蓋部分的所述抗靜電保護層13的第一面130(即頂面)。The
實施例3:抗靜電保護元件Example 3: Antistatic protection component
如圖3所示,抗靜電保護元件1進一步包含第一絕緣保護層15和一第二絕緣保護層16,所述第一絕緣保護層15覆蓋全部的所述阻隔層14、部分的所述第一內電極11,以及部分的所述第二內電極12;且所述第二絕緣保護層16覆蓋全部的所述第一絕緣保護層15、部分的所述第一內電極11,以及部分的所述第二內電極12。As shown in FIG. 3 , the antistatic protection element 1 further includes a first insulating
此外,抗靜電保護元件1進一步包含第一外電極17和一第二外電極18;其中,所述第一外電極17和所述第二外電極18分別設置於所述基板10的相對兩側面102A、102B,且所述第一外電極17與所述第一內電極11電性連接,且所述第二外電極18與所述第二內電極12電性連接。In addition, the antistatic protection element 1 further includes a first
製備例1:抗靜電保護元件Preparation Example 1: Antistatic Protection Component
步驟一:齊備一基板,並透過網板印刷或電鍍於所述基板之頂面形成一第一內電極和一第二內電極後進行乾燥;其中,所述基板為氧化鋁陶瓷基板,所述第一內電極和所述第二內電極皆為銀鈀合金電極。Step 1: Prepare a substrate, and form a first internal electrode and a second internal electrode on the top surface of the substrate through screen printing or electroplating, and then dry them; wherein the substrate is an alumina ceramic substrate, and the The first internal electrode and the second internal electrode are both silver-palladium alloy electrodes.
步驟二:透過網板印刷於部分所述第一內電極、部分所述第二內電極和部分所述基板上形成一抗靜電保護層,並於400 ○C至700 ○C下進行燒結,以使所述抗靜電保護層固著於所述第一內電極、所述第二內電極及所述基板上;其中,以所述抗靜電保護層的總重為基準,所述抗靜電保護層包含15重量百分比的鉑、60重量百分比的碳化鎳及25重量百分比的填料;其中,所述填料為第一市售玻璃,成分包含氧化鋅(ZnO)、氧化鋁(Al 2O 3)、二氧化矽(SiO 2)和碳酸鈣(CaCO 3),且產品標示顯示所述第一市售玻璃的轉變點為587 ○C至627 ○C;變形點為667 ○C至707 ○C;以及線膨脹係數為56*10 -7/ ○C至64*10 -7/ ○C。 Step 2: Form an antistatic protective layer on part of the first internal electrode, part of the second internal electrode and part of the substrate through screen printing, and sinter at 400 ○ C to 700 ○ C to The antistatic protective layer is fixed on the first internal electrode, the second internal electrode and the substrate; wherein, based on the total weight of the antistatic protective layer, the antistatic protective layer It contains 15 weight percent of platinum, 60 weight percent of nickel carbide and 25 weight percent of filler; wherein, the filler is the first commercially available glass, and the ingredients include zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), Silicon oxide (SiO 2 ) and calcium carbonate (CaCO 3 ), and the product label shows that the transition point of the first commercial glass is 587 ○ C to 627 ○ C; the deformation point is 667 ○ C to 707 ○ C; and the line The expansion coefficient is 56*10 -7 / ○ C to 64*10 -7 / ○ C.
步驟三:透過網板印刷形成一阻隔層,以覆蓋全部的所述抗靜電保護層、部分所述第一內電極、部分所述第二內電極和部分所述基板。Step 3: Form a barrier layer through screen printing to cover all of the antistatic protective layer, part of the first internal electrode, part of the second internal electrode and part of the substrate.
步驟四:透過網板印刷形成一第一絕緣保護層,以覆蓋全部的所述阻隔層、部分所述第一內電極、部分所述第二內電極和部分所述基板,並於400 ○C至510 ○C下進行燒結;其中,所述第一絕緣保護層所用材料包含上述第一市售玻璃。 Step 4: Form a first insulating protective layer through screen printing to cover all of the barrier layer, part of the first internal electrode, part of the second internal electrode and part of the substrate, and heat it at 400 ○ C to 510 ○ C for sintering; wherein the material used for the first insulating protective layer includes the above-mentioned first commercially available glass.
步驟五:透過網板印刷形成一第二絕緣保護層,以覆蓋全部的所述第一絕緣保護層、部分所述第一內電極、部分所述第二內電極和部分所述基板,並於100 ○C至300 ○C下進行加熱,以獲得一半成品;其中,所述第二絕緣保護層包含環氧樹脂(epoxy)。 Step 5: Form a second insulating protective layer through screen printing to cover all of the first insulating protective layer, part of the first internal electrode, part of the second internal electrode and part of the substrate, and Heating is performed at 100 ○ C to 300 ○ C to obtain a half finished product; wherein the second insulating protective layer contains epoxy.
步驟六:透過浸漬和電鍍於所述半成品之相對兩側面分別形成一第一外電極和一第二外電極,且所述第一外電極與所述第一內電極電性連接,且所述第二外電極與所述第二內電極電性連接,以獲得一如圖3所示之抗靜電保護元件之成品;其中,所述第一外電極和所述第二外電極皆為三層結構:第一至三層(由內而外)的電極材料依序為銀、鎳與錫。Step 6: Form a first external electrode and a second external electrode respectively on the opposite sides of the semi-finished product through dipping and electroplating, and the first external electrode is electrically connected to the first internal electrode, and the The second external electrode is electrically connected to the second internal electrode to obtain a finished antistatic protection element as shown in Figure 3; wherein the first external electrode and the second external electrode are both three-layer Structure: The electrode materials of the first to third layers (from the inside out) are silver, nickel and tin in order.
最後,所述抗靜電保護層、阻隔層和第一絕緣保護層的原料皆另添加松油醇和乙基纖維素以利原料混合及黏合,並於燒結過程中移除松油醇和乙基纖維素。Finally, terpineol and ethyl cellulose are added to the raw materials of the antistatic protective layer, barrier layer and first insulating protective layer to facilitate the mixing and adhesion of the raw materials, and the terpineol and ethyl cellulose are removed during the sintering process. .
製備例2:抗靜電保護元件Preparation Example 2: Antistatic Protection Component
步驟一:齊備一基板,並透過網板印刷或電鍍於所述基板之頂面形成一第一內電極後進行乾燥;其中,所述基板為氧化鋁陶瓷基板,所述第一內電極為銀鈀合金電極。Step 1: Prepare a substrate, form a first internal electrode on the top surface of the substrate through screen printing or electroplating, and then dry it; wherein the substrate is an alumina ceramic substrate, and the first internal electrode is silver. Palladium alloy electrode.
步驟二:透過網板印刷於部分所述第一內電極和部分所述基板上形成一抗靜電保護層,並於400 ○C至700 ○C下進行燒結,以使所述抗靜電保護層固著於所述第一內電極及所述基板上;其中,所述抗靜電保護層同製備例1。 Step 2: Form an antistatic protective layer on part of the first internal electrode and part of the substrate through screen printing, and sinter at 400 ○ C to 700 ○ C to make the antistatic protective layer solid. Adhered to the first internal electrode and the substrate; wherein, the antistatic protective layer is the same as Preparation Example 1.
步驟三:透過網板印刷或電鍍於部分所述抗靜電保護層和部分所述基板上形成一第二內電極後進行乾燥,以獲得一如圖2所示之抗靜電保護元件的結構;其中,所述第二內電極為銀鈀合金電極。Step 3: Form a second internal electrode on part of the antistatic protective layer and part of the substrate through screen printing or electroplating and then dry it to obtain an antistatic protection element structure as shown in Figure 2; wherein , the second internal electrode is a silver-palladium alloy electrode.
步驟四至步驟七:分別同製備例1之步驟三至六,在第一內電極、抗靜電保護層和第二內電極上依序形成阻隔層、第一絕緣保護層和第二絕緣保護層,以及於所述半成品之相對兩側面分別形成第一外電極和第二外電極。Steps 4 to 7: Follow steps 3 to 6 of Preparation Example 1, respectively, to sequentially form a barrier layer, a first insulating protective layer and a second insulating protective layer on the first internal electrode, the antistatic protective layer and the second internal electrode. And forming a first external electrode and a second external electrode respectively on two opposite sides of the semi-finished product.
測試例1:抗靜電衝擊試驗Test Example 1: Anti-static shock test
測試例1包含比較例A、實施例A和實施例B,且每組各包含20個成品,每組之差異說明如表1所示。Test Example 1 includes Comparative Example A, Example A and Example B, and each group contains 20 finished products. The differences in each group are shown in Table 1.
表1:比較例A、實施例A和實施例B之差異說明
上述阻隔層的第一玻璃材料為第二市售玻璃,其成分包含三氧化二鉍(Bi 2O 3)、三氧化二硼(B 2O 3)和氧化鋅(ZnO),且產品標示顯示所述第二玻璃的軟化點為433 ○C;燒成溫度為480 ○C至500 ○C,玻璃轉化溫度為363 ○C,以及直徑為3微米至4.5微米。 The first glass material of the above-mentioned barrier layer is the second commercially available glass. Its composition includes bismuth trioxide (Bi 2 O 3 ), diboron trioxide (B 2 O 3 ) and zinc oxide (ZnO), and the product label shows The second glass has a softening point of 433 ○ C, a firing temperature of 480 ○ C to 500 ○ C, a glass transition temperature of 363 ○ C, and a diameter of 3 to 4.5 microns.
測試方法:Test method:
第一階段:各組依據IEC61000-4-2之靜電放電抗擾度測試標準進行測試;其中,接觸放電的測試電壓設為15千伏特(kV),並對各組中的每一成品皆提供正反向靜電放電衝擊各100次,並檢查各組中的每一成品的外觀,若未出現擊穿狀況者標示O,反之,若出現擊穿狀況者標示X。各組的測試結果記錄於表2中。The first stage: Each group is tested according to the electrostatic discharge immunity test standard of IEC61000-4-2; among them, the test voltage of contact discharge is set to 15 kilovolts (kV), and each finished product in each group is provided Perform forward and reverse electrostatic discharge shocks 100 times each, and check the appearance of each finished product in each group. If no breakdown occurs, mark O. On the contrary, if breakdown does occur, mark X. The test results of each group are recorded in Table 2.
之後,對各組中的每一成品皆提供12 V之最大連續工作電壓(Maximum allowable continuous DC voltage,Vdc),並以Keithley電表量測漏電流,並區分2種情況:(1)當所測得的漏電流≦10 μA時,標示為O,表示該成品未因受靜電放電衝擊而受損,而未衍生漏電流的問題;(2)當所測得的漏電流>10 μA時,標示為X,表示該成品受靜電放電衝擊後內部結構受損,且產生漏電流的問題。各組的測試結果記錄於表2中;其中,平均漏電流係將每組中的20個成品所測得的漏電流加以平均而得;以及最大漏電流為每組中的20個成品中所測得的漏電流中之最大值。After that, each finished product in each group is provided with a maximum continuous working voltage (Maximum allowable continuous DC voltage, Vdc) of 12 V, and the leakage current is measured with a Keithley meter, and two situations are distinguished: (1) When the measured When the measured leakage current ≦10 μA, mark it as O, which means that the finished product has not been damaged by electrostatic discharge impact and does not cause leakage current problems; (2) When the measured leakage current >10 μA, mark it If it is The test results of each group are recorded in Table 2; among them, the average leakage current is the average leakage current measured by the 20 finished products in each group; and the maximum leakage current is the average leakage current measured by the 20 finished products in each group. The maximum value of the measured leakage current.
表2:比較例A、實施例A和實施例B之靜電放電抗擾度測試結果
從表2的實驗結果可知,比較例A的擊穿率為35%,實施例A的擊穿率為25%,實施例B的擊穿率為0%,可知實施例A和實施例B因設有阻隔層,故可降低擊穿率,亦即降低抗靜電保護元件內部炸裂的風險。From the experimental results in Table 2, it can be seen that the breakdown rate of Comparative Example A is 35%, the breakdown rate of Example A is 25%, and the breakdown rate of Example B is 0%. It can be seen that the breakdown rate of Example A and Example B is It is equipped with a barrier layer, so the breakdown rate can be reduced, which means the risk of internal explosion of the anti-static protection element is reduced.
此外,由實施例A與實施例B的擊穿率和電流差異可知,當陶瓷材料(即氧化鋁)的含量大於50重量百分比時,可進一步大幅降低擊穿率,亦即大幅降低抗靜電保護元件內部炸裂的風險,並避免衍生漏電流的問題。In addition, it can be seen from the difference in breakdown rate and current between Example A and Example B that when the content of the ceramic material (ie, alumina) is greater than 50% by weight, the breakdown rate can be further significantly reduced, that is, the anti-static protection can be significantly reduced. Reduce the risk of internal component explosion and avoid leakage current problems.
最後,成品外觀出現擊穿的原因在於所述抗靜電保護層未能及時傳導靜電放電的能量,而導致第一絕緣保護層炸裂,雖非所述抗靜電保護層炸裂,但所述抗靜電保護層仍可能同時受損,而無法使連接本發明成品的迴路維持開路狀態,亦即維持迴路的低電流狀態,而衍生後續漏電流的問題。因此,本發明增設阻隔層可提升抗靜電保護元件的結構強度來降低擊穿率,以提升本發明抗靜電保護元件的耐靜電衝擊能力、可靠性和耐用度。Finally, the reason for the breakdown of the appearance of the finished product is that the anti-static protective layer failed to conduct the energy of electrostatic discharge in time, causing the first insulating protective layer to burst. Although the anti-static protective layer did not burst, the anti-static protective layer The layers may still be damaged at the same time, and the loop connected to the finished product of the present invention cannot be maintained in an open circuit state, that is, the low current state of the loop can be maintained, resulting in subsequent leakage current problems. Therefore, adding a barrier layer in the present invention can improve the structural strength of the anti-static protection element to reduce the breakdown rate, thereby improving the anti-static shock resistance, reliability and durability of the anti-static protection element in the present invention.
第二階段:Second stage:
基於實施例B於第一階段的測試結果表現優異,故進一步將實施例B之20個成品進行更多次數之正反向靜電放電衝擊測試(各200次和各500次),其餘試驗方法同第一階段,結果說明如表3:Based on the excellent test results of Example B in the first stage, the 20 finished products of Example B were further subjected to more forward and reverse electrostatic discharge impact tests (200 times each and 500 times each). The remaining test methods were the same. In the first stage, the results are explained in Table 3:
表3:實施例B之靜電放電抗擾度測試結果
從表3的結果可知,即便實施例B承受的靜電放電衝擊高達500*2=1000次,仍可正常運作。It can be seen from the results in Table 3 that even if Example B withstands electrostatic discharge shocks up to 500*2=1000 times, it can still operate normally.
最後,基於比較例A、實施例A和實施例B的20個成品皆能於承受正反向靜電放電衝擊各10次,亦即比較例A、實施例A和實施例B的擊穿率皆為0%,且各組平均電流和最大電流皆≦10 μA,故未另提供實驗數據。Finally, the 20 finished products based on Comparative Example A, Example A and Example B were able to withstand 10 forward and reverse electrostatic discharge impacts each, that is, the breakdown rates of Comparative Example A, Example A and Example B were all the same. is 0%, and the average current and maximum current of each group are both ≦10 μA, so no additional experimental data is provided.
綜上,比較例A和實施例A可承受的靜電放電衝擊次數至少為10*2=20次。更進一步者,實施例A因進一步設置阻隔層,故可降低抗靜電保護元件內部炸裂的風險,亦即降低擊穿率。實施例B則係於進一步調整阻隔層的配方(亦即阻隔層所含陶瓷材料的含量大於50重量百分比)後,使抗靜電保護元件的抗靜電放電衝擊次數由20次提升為至少1000次,亦即所述抗靜電保護元件即便歷經1000次的15千伏特之靜電衝擊後,仍可正常運作,而未出現擊穿或衍生漏電流問題,而提升本發明抗靜電保護元件的耐靜電衝擊能力、可靠性和耐用度。In summary, the number of electrostatic discharge shocks that Comparative Example A and Embodiment A can withstand is at least 10*2=20 times. Furthermore, since Embodiment A further provides a barrier layer, the risk of internal explosion of the anti-static protection element can be reduced, that is, the breakdown rate can be reduced. In Example B, after further adjusting the formula of the barrier layer (that is, the content of the ceramic material contained in the barrier layer is greater than 50% by weight), the number of anti-static discharge shocks of the anti-static protection element is increased from 20 times to at least 1000 times. That is to say, the anti-static protection element can still operate normally even after experiencing 1,000 times of 15 kV electrostatic shocks without breakdown or derived leakage current problems, thereby improving the anti-static shock resistance of the anti-static protection element of the present invention. , reliability and durability.
1:抗靜電保護元件1: Anti-static protection components
10:基板10:Substrate
100:頂面100:Top surface
101:底面101: Bottom
11:第一內電極11: First internal electrode
110:第一面110: Side 1
111:第二面111:Second side
102A,102B:側面102A,102B: Side
12:第二內電極12: Second internal electrode
120:第一面120: First side
121:第二面121:Second side
13:抗靜電保護層13: Antistatic protective layer
130:第一面130: Side 1
131:第二面131:Second side
14:阻隔層14: Barrier layer
15:第一絕緣保護層15: First insulation protective layer
16:第二絕緣保護層16: Second insulation protective layer
17:第一外電極17: First external electrode
18:第二外電極18: Second external electrode
圖1為本發明實施例1的示意圖。Figure 1 is a schematic diagram of Embodiment 1 of the present invention.
圖2為本發明實施例2的示意圖。Figure 2 is a schematic diagram of Embodiment 2 of the present invention.
圖3為本發明實施例3的示意圖。Figure 3 is a schematic diagram of Embodiment 3 of the present invention.
無without
1:抗靜電保護元件 1: Anti-static protection components
10:基板 10:Substrate
100:頂面 100:Top surface
101:底面 101: Bottom
11:第一內電極 11: First internal electrode
12:第二內電極 12: Second internal electrode
13:抗靜電保護層 13: Antistatic protective layer
14:阻隔層 14: Barrier layer
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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TW297940B (en) * | 1996-07-08 | 1997-02-11 | Taiwan Semiconductor Mfg | The method for forming high electricresist contact |
TW200713575A (en) * | 2005-09-20 | 2007-04-01 | Inpaq Technology Co Ltd | Protection element of electronic circuit |
WO2010061550A1 (en) * | 2008-11-26 | 2010-06-03 | 株式会社 村田製作所 | Esd protection device and manufacturing method thereof |
TW201802842A (en) * | 2016-06-10 | 2018-01-16 | 摩達伊諾琴股份有限公司 | Complex electronic component |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW297940B (en) * | 1996-07-08 | 1997-02-11 | Taiwan Semiconductor Mfg | The method for forming high electricresist contact |
TW200713575A (en) * | 2005-09-20 | 2007-04-01 | Inpaq Technology Co Ltd | Protection element of electronic circuit |
WO2010061550A1 (en) * | 2008-11-26 | 2010-06-03 | 株式会社 村田製作所 | Esd protection device and manufacturing method thereof |
TW201802842A (en) * | 2016-06-10 | 2018-01-16 | 摩達伊諾琴股份有限公司 | Complex electronic component |
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