TWI829465B - Power module - Google Patents

Abstract

The present application provides a power module. The power module includes a substrate, a plurality of semiconductor elements, a plurality of pins and a package. The substrate includes a first metal surface, and the plurality of semiconductor elements are disposed on the first metal surface. The pin direction of each of the plurality of pins is perpendicular to the bottom of the first metal surface. The package is configured to cover the first metal surface and the plurality of semiconductor elements and covers each pin partially. Each of the plurality of pins extends out of the package along the same direction. The plurality of pins include a positive voltage pins and a negative voltage pins. An end of the positive voltage pin is attached to the middle position of the first side of the first metal surface. An end of the negative voltage pin is attached to the middle of the second side of the first metal surface. The first and second sides are spatially opposite each other, and the first and second sides are connected to the bottom of the first metal surface.

Description

Power module

This case relates to a power module, specifically a power module in which multiple semiconductor devices are arranged on a substrate.

In existing charging pile equipment, the power conversion unit requires the use of multiple TO247 structured discrete components. Each TO247 structured discrete device has a MOSFET chip, and the size and power density of the discrete device are fixed.

Since the size and power density of each discrete component are fixed, devices that meet rising power requirements must use more discrete components at the same time than traditional devices with lower power requirements. Meet high power requirements. However, if the device uses more discrete components, the volume will increase, and due to the increase in the number of electronic components, it will be more difficult to dissipate heat inside the device.

Therefore, how to develop a power module that can improve the above-mentioned conventional technology is currently an urgent need.

The purpose of this project is to provide a power module that disposes multiple semiconductor devices on a substrate, thereby replacing multiple traditional discrete components with one power module, thereby reducing the volume and increasing the power density. In addition, the positive voltage and negative voltage pins of the power module in this case are respectively attached to the middle position on the side of the metal surface, thus increasing the structural stability of the power module and extending its service life.

According to the concept of this case, this case provides a power module, including a substrate, multiple semiconductor devices, multiple pins and a package. The substrate includes a first metal surface, and a plurality of semiconductor devices are disposed on the first metal surface. The outlet direction of each pin is perpendicular to the bottom edge of the first metal surface. The package body is used to cover the first metal surface, the plurality of semiconductor devices, and partially cover each pin, and each pin extends out of the package body along the same direction. The plurality of pins include a positive voltage pin and a negative voltage pin, and the end of the positive voltage pin is attached to the middle position of the first side of the first metal surface, and the end of the negative voltage pin is attached to the first At the middle position of the second side of the metal surface, the first and second sides are spatially opposite to each other, and both the first and second sides are connected to the bottom side of the first metal surface.

Some typical embodiments embodying the features and advantages of this case will be described in detail in the following description. It should be understood that this case can have various changes in different aspects without departing from the scope of this case, and the descriptions and illustrations are essentially for illustrative purposes and are not intended to limit this case.

Figure 1 is a schematic three-dimensional structural diagram of the power module 1 of the preferred embodiment of the present invention. Figure 2 is a partial three-dimensional structural diagram of the power module 1 of Figure 1. Figure 3 is a schematic diagram of the power module 1 of Figure 2. top view. As shown in Figures 1, 2 and 3, the power module 1 includes a substrate 2, a plurality of semiconductor devices 3, a plurality of pins and a package 5. The substrate 2 includes a first metal surface 20 on which a plurality of semiconductor devices 3 are disposed. In some embodiments, the number of pins is an odd number and greater than or equal to three. The outlet direction of each pin is perpendicular to the bottom edge 21 of the first metal surface 20 . The package body 5 is used to cover the first metal surface 20 and the plurality of semiconductor devices 3 and partially cover each pin, and each pin extends out of the package body 5 in the same direction. The plurality of pins include a positive voltage pin 40 and a negative voltage pin 41, wherein the end 400 of the positive voltage pin 40 is attached to the middle position of the first side 22 of the first metal surface 20 (such as but not limited to the first The end 410 of the negative voltage pin 41 is attached to the middle position of the second side 23 of the first metal surface 20 (for example, but not limited to the middle point of the second side 23 ). Since the end 400 of the positive voltage pin 40 and the end 410 of the negative voltage pin 41 are attached to the middle position of the first side 22 and the second side 23 respectively, when the power module 1 is damaged during the assembly process, When affected by external forces, the structure of the power module 1 is relatively stable, thereby improving the reliability and service life of the power module 1 . The first side 22 and the second side 23 are spatially opposite to each other, and both the first side 22 and the second side 23 are connected to the bottom side 21 of the first metal surface 20 . The power module 1 of this case arranges multiple semiconductor devices on a substrate, thereby replacing multiple traditional discrete components with one power module, thereby reducing the volume and increasing the power density. In addition, the positive voltage and negative voltage pins of the power module 1 in this case are respectively attached to the middle position on the side of the metal surface, thereby increasing the structural stability of the power module 1 and extending its service life.

In some embodiments, the end 400 of the positive voltage pin 40 is disposed between the two semiconductor devices 3 , and the end 410 of the negative voltage pin 41 is disposed between the two semiconductor devices 3 . Since the ends 400 and 410 of the positive voltage pin 40 and the negative voltage pin 41 are respectively disposed between the two semiconductor devices 3, the heat dissipation effect of the power module 1 can be increased.

In some embodiments, the number of semiconductor devices 3 is an even number, such as the power module 1 shown in Figures 1 to 3, which includes four semiconductor devices 3, and the four semiconductor devices 3 are on the first metal surface 20 Arrange to form a matrix. The center O of the matrix, the middle position of the first side 22 and the second side 23 are spatially located on the same horizontal line L.

In some embodiments, the plurality of pins further include a phase voltage pin 42 , and the phase voltage pin 42 is disposed between the positive voltage pin 40 and the negative voltage pin 41 . The end 420 of the phase voltage pin 42 is attached to the first metal surface 20 , and the end 420 is attached to the first metal surface 20 closer to the bottom edge 21 than the horizontal line L. The first distance R1 between the phase voltage pin 42 and the positive voltage pin 40 is the same as the second distance R2 between the phase voltage pin 42 and the negative voltage pin 41 .

In some embodiments, the positive voltage pin 40 , the negative voltage pin 41 and the phase voltage pin 42 have the same cross-sectional area, and the positive voltage pin 40 , the negative voltage pin 41 and the phase voltage pin 42 have multiple Pin 4 has the largest cross-sectional area, so the positive voltage pin 40, the negative voltage pin 41 and the phase voltage pin 42 can withstand the power supply current input from outside the power module 1.

In some embodiments, the plurality of pins further include a first gate pin 43 and a first source pin 44, and the first gate pin 43 and the first source pin 44 are disposed at the first spacing R1 Within, that is, the first gate pin 43 and the first source pin 44 are located between the phase voltage pin 42 and the positive voltage pin 40 . The end 430 of the first gate pin 43 and the end 440 of the first source pin 44 are adjacent to the bottom edge 21 of the first metal surface 20 , and the first gate pin 43 is connected by at least one power transmission line 6 The end 430 of the first source pin 44 and the end 440 of the first source pin 44 are electrically connected to the first metal surface 20 . Among the plurality of power transmission lines 6 in this case, some of the power transmission lines 6 are used for signal transmission, and some of the power transmission lines 6 are used for power transmission. In some embodiments, the signal of the power transmission line 6 is provided by the semiconductor device 3 on the first metal surface 20 . The package 5 covers the end 430 of the first gate pin 43 and the end 440 of the first source pin 44 . It should be noted that in order to keep the diagram concise, only some power transmission lines 6 are given numbers 6 in the diagram.

In some embodiments, the plurality of pins further include a second gate pin 45 and a second source pin 46, and the second gate pin 45 and the second source pin 46 are disposed at the second spacing R2 Within, that is, the second gate pin 45 and the second source pin 46 are located between the phase voltage pin 42 and the negative voltage pin 41 . The end 450 of the second gate pin 45 and the end 460 of the second source pin 46 are adjacent to the bottom edge 21 of the first metal surface 20 , and the second gate pin 45 is connected by at least one power transmission line 6 The end 450 of the second source pin 46 and the end 460 of the second source pin 46 are electrically connected to the first metal surface 20 . In some embodiments, the signal of the power transmission line 6 is provided by the semiconductor device 3 on the first metal surface 20 . The package 5 covers the end 450 of the second gate pin 45 and the end 460 of the second source pin 46 .

Please refer to Figure 4. Figure 4 is a schematic diagram of the current flow when the power module 1 in Figure 3 receives power current. Each semiconductor device 3 is electrically connected to the first metal surface 20 through at least one power transmission line 6 . In FIG. 4 , the direction of the solid arrow represents the direction in which the power supply current flows into and out of the power module 1 via the positive voltage pin 40 and the phase voltage pin 42 respectively. When the positive voltage pin 40 receives the power current, the power current flows through the semiconductor device 3 which is higher than the horizontal line L compared to the bottom edge 21 (that is, with the bottom edge 21 through the first metal surface 20 and at least one power transmission line 6 The semiconductor device 3) is located on the opposite side of the horizontal line L, and then the supply current flows out of the power module 1 via the phase voltage pin 42.

The pin setting position of the power module in this case is not limited to the power module 1 shown in Figures 3 and 4. Please refer to Figure 5. The power module 1 shown in Figure 5 and the power module shown in Figure 4 The difference between 1 and 1 lies in the location of the pins in this embodiment. In the embodiment shown in Figure 5, the negative voltage pin 41 is set between the phase voltage pin 42 and the positive voltage pin 40. The second gate The gate pin 45 and the second source pin 46 are located between the positive voltage pin 40 and the negative voltage pin 41, and the first gate pin 43 and the first source pin 44 are located between the negative voltage pin 41 and the negative voltage pin 41. voltage between pins 42. In FIG. 5 , the direction of the solid arrow represents the direction in which the power supply current flows into and out of the power module 1 via the positive voltage pin 40 and the phase voltage pin 42 respectively. In the embodiment shown in FIG. 5 , after the supply current flows through the semiconductor device 3 which is higher than the horizontal line L compared to the bottom edge 21 , the supply current flows out of the power module 1 through the phase voltage pin 42 .

In some embodiments, the power supply current can flow into the power module 1 through the phase voltage pin 42 and flow through the semiconductor device 3 which is lower than the horizontal line L compared to the bottom edge 21 (that is, the same as the bottom edge 21 is located at the horizontal line L). Side semiconductor device 3), the embodiment in which the power supply current flows into the power module 1 through the phase voltage pin 42 is illustrated in Figures 4 and 5 as follows.

Please refer to Figures 4 and 5. In Figures 4 and 5, the hollow arrow directions represent the directions in which the power supply current flows into and out of the power module 1 through the phase voltage pin 42 and the negative voltage pin 41 respectively. In the embodiment shown in FIG. 4 , when the phase voltage pin 42 receives the power current, the power current flows through the first metal surface 20 and at least one power transmission line 6 , which is lower than the horizontal line L compared to the bottom edge 21 . The semiconductor device 3 then supplies current out of the power module 1 via the negative voltage pin 41 .

The connection method of the power transmission line 6 of the power module in this case on the first metal surface 20 is not limited to the power module 1 shown in Figures 3, 4 and 5. Please refer to Figure 6. The power module shown in Figure 6 The difference between 1 and the power module 1 shown in Figures 3, 4 and 5 is only that the connection method of the power transmission line 6 of this embodiment is different. Among different embodiments, the connection method of the power transmission line 6 can be based on the semiconductor Device 3 and the setting relationship between multiple pins vary.

Please refer to FIG. 1 again. In some embodiments, the package body 5 has a detachable upper sealant 50 and a lower sealant 51 and two fixing components 52 . In some embodiments, the upper sealant 50 and the lower sealant 51 are integrally formed, and the upper sealant 50 and the lower sealant 51 are injection molded epoxy resin (Epoxy). The upper sealant 50 and the lower sealant 51 Package 5 is formed. In other embodiments, after the upper sealant 50 and the lower sealant 51 form the package body 5, they are fixed to each other through two fixing components 52. The fixing components 52 can be, for example but not limited to, locking screws.

Please refer to Figure 7. Figure 7 is a schematic cross-sectional structural diagram of the power module 1 in Figure 1. The substrate 2 in this case also includes a thermally conductive insulating plate 24 and a second metal surface 25. The thermally conductive insulating plate 24 has an opposite first surface 240 and a second surface 241. The first metal surface 20 is attached to the first surface of the thermally conductive insulating plate 24. 240, and the second metal surface 25 is attached to the second surface 241 of the thermally conductive insulating plate 24, and the second metal surface 25 is exposed to the package body 5. In some embodiments, the package 5 is made of a molding compound, and the molding compound is made of epoxy resin.

To sum up, this project provides a power module that disposes multiple semiconductor devices on a substrate, thereby replacing multiple traditional discrete components with one power module, thereby reducing the volume and increasing the power density. In addition, the positive voltage and negative voltage pins of the power module in this case are respectively attached to the middle position on the side of the metal surface, thus increasing the structural stability of the power module and extending its service life. The end is disposed between two semiconductor devices, thereby increasing the heat dissipation effect of the power module.

It should be noted that the above are only preferred embodiments proposed to illustrate this case. This case is not limited to the embodiments described. The scope of this case is determined by the scope of the attached patent application. Moreover, this case may be modified in various ways by those who are familiar with this technology, but it will not deviate from the intended protection within the scope of the attached patent application.

1: Power module 2:Substrate 20: First metal surface 21: Bottom 22:First side 23:Second side 24:Thermal conductive insulation board 240: First side 241:Second side 25: Second metal surface 3: Semiconductor devices 40: Positive voltage pin 41: Negative voltage pin 400, 410: end 42 phase voltage pins 420:end 43: First gate pin 44: First source pin 430, 440: end 45: Second gate pin 46: Second source pin 450, 460: end 5:Package 50: Upper sealant 51: Lower sealant 52: Fixed components 6:Power transmission line O: center of matrix L: horizontal line R1: first spacing R2: second spacing

Figure 1 is a schematic three-dimensional structural diagram of a power module according to a preferred embodiment of the present invention.

Figure 2 is a partial three-dimensional structural diagram of the power module in Figure 1.

Figure 3 is a top view of the power module in Figure 2.

Figure 4 is a schematic diagram of the current flow when the power module in Figure 3 receives power current.

Figure 5 is a schematic diagram of the current flow when the power module receives power current according to another preferred embodiment of the present invention.

Figure 6 is a schematic diagram of the current flow when the power module receives power current according to another preferred embodiment of the present invention.

Figure 7 is a schematic cross-sectional structural diagram of the power module in Figure 1.

1: Power module

40: Positive voltage pin

41: Negative voltage pin

42: Phase voltage pin

43: First gate pin

44: First source pin

45: Second gate pin

46: Second source pin

5:Package

50: Upper sealant

51: Lower sealant

52: Fixed components

Claims (15)

A power module containing: a substrate including a first metal surface; A plurality of semiconductor devices are disposed on the first metal surface; A plurality of pins, wherein the outlet direction of each pin is perpendicular to a bottom edge of the first metal surface; and A package body for covering the first metal surface, the plurality of semiconductor devices, and partially covering each of the pins, wherein each of the pins extends out of the package body along the same direction; Wherein, the plurality of pins include a positive voltage pin and a negative voltage pin, and an end of the positive voltage pin is attached to a middle position of a first side of the first metal surface, and the An end of the negative voltage pin is attached to a middle position of a second side of the first metal surface, wherein the first side and the second side are spatially opposite to each other, and the first and the second side are spatially opposite to each other. The second sides are connected to the bottom edge of the first metal surface. The power module of claim 1, wherein the number of the plurality of semiconductor devices is an even number, and the plurality of semiconductor devices are arranged on the first metal surface to form a matrix; Wherein, a center of the matrix and the middle position of the first and second sides are spatially located on the same horizontal line. The power module as described in claim 2, wherein the plurality of pins further includes a phase voltage pin, and the phase voltage pin is disposed between the positive voltage pin and the negative voltage pin; One end of the phase voltage pin is attached to the first metal surface closer to the bottom edge than the horizontal line. The power module of claim 3, wherein a first spacing between the phase voltage pin and the positive voltage pin is the same as a second spacing between the phase voltage pin and the negative voltage pin. . The power module of claim 4, wherein the plurality of pins further include a first gate pin and a first source pin, and the first gate pin and the first source pin The feet are arranged within the first distance; An end of the first gate pin and the first source pin is adjacent to the bottom edge of the first metal surface, and the first gate pin and the third source pin are connected by at least one power transmission line. The end of a source pin is electrically connected to the first metal surface; The package body covers the first gate pin and the end of the first source pin. The power module of claim 4, wherein the plurality of pins further include a second gate pin and a second source pin, and the second gate pin and the second source pin The feet are arranged within the second distance; The ends of the second gate pin and the second source pin are adjacent to the bottom edge of the first metal surface, and the second gate pin and the second source pin are connected by at least one power transmission line. The end of the source pin is electrically connected to the first metal surface; The package body covers the second gate pin and the end of the second source pin. The power module of claim 3, wherein each of the semiconductor devices is electrically connected to the first metal surface through at least one power transmission line; When the positive voltage pin receives a power current, the power current flows through the semiconductor device that is higher than the horizontal line compared to the bottom edge through the first metal surface and the at least one power transmission line. The power module of claim 7, wherein after the power current flows through the semiconductor device that is higher than the horizontal line compared to the bottom edge, the power current flows out of the power module through the phase voltage pin. The power module of claim 7, wherein after the power current flows through the semiconductor device that is higher than the horizontal line compared to the bottom edge, the power current flows out of the power module through the negative voltage pin. The power module of claim 7, wherein when the negative voltage pin receives the power current, the power current flows through the first metal surface and the at least one power transmission line, which is lower than the bottom edge. the semiconductor device on the horizontal line; Wherein, after the power current flows through the semiconductor device which is lower than the horizontal line compared to the bottom edge, the power current flows out of the power module through the phase voltage pin. The power module of claim 7, wherein when the phase voltage pin receives the power current, the power current flows through the first metal surface and the at least one power transmission line, which is lower than the bottom edge. the semiconductor device on the horizontal line; Wherein, after the power current flows through the semiconductor device which is lower than the horizontal line compared to the bottom edge, the power current flows out of the power module through the negative voltage pin. The power module as described in claim 3, wherein the plurality of pins have a cross-sectional area, and the positive voltage pin, the negative voltage pin and the phase voltage pin have the largest cross-section among the plurality of pins. area. The power module as described in claim 1, wherein the number of the plurality of pins is an odd number, and the number of the plurality of pins is greater than or equal to three. The power module of claim 1, wherein the substrate further includes a thermally conductive insulating plate and a second metal surface; wherein the first metal surface is attached to a first side of the thermally conductive insulating plate, and the second metal surface is attached to a second side of the thermally conductive insulating plate, the first side and the second side are opposite, and The second metal surface is exposed on the package body. The power module of claim 1, wherein the package is made of a molding compound, and the molding compound is made of epoxy resin.

Images