TWI828375B - Direct-lit mini-led backlight module and manufacturing method thereof - Google Patents
Direct-lit mini-led backlight module and manufacturing method thereof Download PDFInfo
- Publication number
- TWI828375B TWI828375B TW111139528A TW111139528A TWI828375B TW I828375 B TWI828375 B TW I828375B TW 111139528 A TW111139528 A TW 111139528A TW 111139528 A TW111139528 A TW 111139528A TW I828375 B TWI828375 B TW I828375B
- Authority
- TW
- Taiwan
- Prior art keywords
- sub
- emitting diode
- millimeter light
- light
- millimeter
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000005538 encapsulation Methods 0.000 claims abstract description 20
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 210000004508 polar body Anatomy 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000036961 partial effect Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 201000009310 astigmatism Diseases 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Planar Illumination Modules (AREA)
- Led Device Packages (AREA)
Abstract
Description
本發明有關於一種背光模組及其製造方法，特別是指一種直下式次毫米發光二極體背光模組及其製造方法。The present invention relates to a backlight module and a manufacturing method thereof, in particular to a direct-type sub-millimeter light-emitting diode backlight module and a manufacturing method thereof.
由於液晶顯示器本身非自發光，需要背光模組提供足夠亮度的光源才能顯示畫面。隨著半導體製程的發展，發光二極體（LED）的尺寸也隨之縮小到數百個微米等級，也就是所謂的次毫米發光二極體（Mini LED）。使用次毫米發光二極體當作背光光源，由於尺寸小，其混光距離相較於傳統的發光二極體來說小很多，可採用直下式背光技術，將數千顆、數萬顆，甚至更多的次毫米發光二極體作成矩陣陣列佈滿液晶顯示器底部，以獲得更好的亮度和亮度均勻性。此外，次毫米發光二極體的矩陣陣列可被劃分成多個局部調光區，以實現區域調光（Local Dimming Zones）技術，其根據液晶顯示器的顯示內容不同，每一調光區可以精確調節亮度，進而實現液晶顯示器的高對比度。Since the LCD itself is not self-illuminating, the backlight module needs to provide a light source of sufficient brightness to display the image. With the development of semiconductor manufacturing processes, the size of light-emitting diodes (LEDs) has also been reduced to hundreds of microns, which is the so-called sub-millimeter light-emitting diodes (Mini LED). Sub-millimeter light-emitting diodes are used as backlight sources. Due to their small size, their light mixing distance is much smaller than that of traditional light-emitting diodes. Direct-lit backlight technology can be used to combine thousands or tens of thousands of light-emitting diodes. Even more sub-millimeter light-emitting diodes are made into a matrix array covering the bottom of the LCD display to obtain better brightness and brightness uniformity. In addition, the matrix array of sub-millimeter light-emitting diodes can be divided into multiple local dimming zones to implement local dimming zones (Local Dimming Zones) technology. According to the different display content of the liquid crystal display, each dimming zone can accurately Adjust the brightness to achieve high contrast in the LCD display.
然而，直下式次毫米發光二極體背光模組的出光因受邊際效應影響，其四周的邊緣輝度較中心位置為低，進而影響整體畫面均勻性。進一步說明，直下式次毫米發光二極體背光模組中任一位置所接收到的光源皆來自四周次毫米發光二極體的光強度疊加，但如第1圖所示，直下式次毫米發光二極體背光模組的邊緣區域所接收到的光強度，只有來自於單側（圖中右側）次毫米發光二極體1的光強度疊加，而其左側是電子元件2和金屬外框3，並不存在次毫米發光二極體1。因此，由於只接收到單側之次毫米發光二極體1的光強度，所以背光模組邊緣區域的輝度較低，即所謂「邊際效應」。儘管直下式次毫米發光二極體背光模組可透過直流（DC）區域調光方式調整四周邊緣的次毫米發光二極體之亮度，來提升邊緣畫面均勻性，但是經由直流區域調光方式調變後往往會發現暗帶仍可視，而影響顯示效果。However, the light output of direct-type sub-millimeter LED backlight modules is affected by the marginal effect, and the brightness around the edges is lower than that at the center, which affects the overall picture uniformity. To further explain, the light source received at any position in the direct-type sub-millimeter LED backlight module comes from the superposition of the light intensity of the four sub-millimeter LEDs. However, as shown in Figure 1, the direct-type sub-millimeter LED backlight module The light intensity received by the edge area of the diode backlight module is only the light intensity superposition from the sub-millimeter light-emitting diode 1 on one side (the right side in the picture), and the left side is the electronic component 2 and the metal frame 3 , there is no sub-millimeter light-emitting diode1. Therefore, since only the light intensity of the sub-millimeter light-emitting diode 1 on one side is received, the brightness in the edge area of the backlight module is low, which is the so-called "marginal effect". Although the direct-type sub-millimeter LED backlight module can adjust the brightness of the sub-millimeter LEDs on the surrounding edges through direct current (DC) regional dimming to improve the uniformity of the edge picture, it is difficult to adjust the brightness through DC regional dimming. After the change, it is often found that the dark band is still visible, which affects the display effect.
因此，目前的產業界迫切地需要尋求一種可以改善背光模組邊緣所出現之暗帶缺陷的直下式次毫米發光二極體背光模組及其製造方法，以使得上述習知技術中所遭遇的各種困難和缺失得以被解決。Therefore, the current industry urgently needs to find a direct-type sub-millimeter light-emitting diode backlight module and a manufacturing method that can improve the dark band defects that appear at the edge of the backlight module, so as to eliminate the problems encountered in the above-mentioned conventional technology. Various difficulties and deficiencies were resolved.
有鑑於此，本發明的主要目的在於提供一種直下式次毫米發光二極體背光模組及其製造方法，藉由雷射網點的形成，能夠有效增加邊緣出光效率，可進一步應用區域調光技術，可望大幅改善邊緣輝度的均勻性，從而能夠有效消除背光模組邊緣所出現的暗帶缺陷。In view of this, the main purpose of the present invention is to provide a direct-type sub-millimeter light-emitting diode backlight module and a manufacturing method thereof. Through the formation of laser dots, the edge light emitting efficiency can be effectively increased, and regional dimming technology can be further applied. , it is expected to significantly improve the uniformity of edge brightness, thereby effectively eliminating the dark band defects appearing at the edge of the backlight module.
為達上述目的，本發明提供一種直下式次毫米發光二極體背光模組，其包括有一印刷電路板、複數次毫米發光二極體單元、複數雷射網點及一封裝層。其中，印刷電路板的表面周圍定義一邊緣區域。毫米發光二極體單元矩陣排列於印刷電路板的表面上且涵蓋邊緣區域。雷射網點分佈於邊緣區域的每一毫米發光二極體單元中。封裝層覆蓋次毫米發光二極體單元且填平雷射網點。To achieve the above object, the present invention provides a direct-type sub-millimeter LED backlight module, which includes a printed circuit board, a plurality of sub-millimeter LED units, a plurality of laser outlets and a packaging layer. Wherein, an edge area is defined around the surface of the printed circuit board. A matrix of millimeter LED units is arranged on the surface of the printed circuit board and covers the edge area. Laser dots are distributed in every millimeter of light-emitting diode units in the edge area. The encapsulation layer covers the sub-millimeter light-emitting diode unit and fills the laser dots.
根據本發明的實施例，上述的雷射網點的點徑介於30至50微米。According to an embodiment of the present invention, the spot diameter of the above-mentioned laser dots is between 30 and 50 microns.
根據本發明的實施例，上述的雷射網點的深度介於5至10微米。According to an embodiment of the present invention, the depth of the laser dots is between 5 and 10 microns.
根據本發明的實施例，上述的雷射網點是隨機分佈於邊緣區域的每一毫米發光二極體單元中。According to an embodiment of the present invention, the above-mentioned laser dots are randomly distributed in each millimeter of light-emitting diode units in the edge area.
根據本發明的實施例，上述分佈於邊緣區域的每一毫米發光二極體單元中的雷射網點的數量為500至1000個。According to an embodiment of the present invention, the number of laser dots in each millimeter of the light-emitting diode unit distributed in the edge area is 500 to 1000.
根據本發明的實施例，上述的次毫米發光二極體單元分別包括複數次毫米發光二極體，且於次毫米發光二極體的外側設有一擋牆。According to an embodiment of the present invention, the above-mentioned sub-millimeter light-emitting diode units each include a plurality of sub-millimeter light-emitting diodes, and a retaining wall is provided outside the sub-millimeter light-emitting diodes.
根據本發明的實施例，上述的印刷電路板的表面包括一阻焊層，次毫米發光二極體單元和雷射網點設置於阻焊層上。According to an embodiment of the present invention, the surface of the printed circuit board includes a solder resist layer, and sub-millimeter light emitting diode units and laser dots are disposed on the solder resist layer.
另外，本發明還提供一種直下式次毫米發光二極體背光模組的製造方法，其包括下列步驟：首先，提供一印刷電路板，印刷電路板的表面周圍定義一邊緣區域。接著，形成矩陣排列的複數次毫米發光二極體單元於印刷電路板的表面上，並使次毫米發光二極體單元涵蓋邊緣區域，並且，形成複數雷射網點於邊緣區域的每一次毫米發光二極體單元中。最後，形成一封裝層覆蓋於次毫米發光二極體單元且填平雷射網點。In addition, the present invention also provides a method for manufacturing a direct-type sub-millimeter light-emitting diode backlight module, which includes the following steps: first, a printed circuit board is provided, and an edge area is defined around the surface of the printed circuit board. Then, a plurality of sub-millimeter light-emitting diode units arranged in a matrix are formed on the surface of the printed circuit board, so that the sub-millimeter light-emitting diode units cover the edge area, and a plurality of laser dots are formed in each millimeter of the edge area to emit light. in the diode unit. Finally, an encapsulation layer is formed to cover the sub-millimeter light-emitting diode unit and fill the laser dots.
根據本發明的實施例，上述的雷射網點的點徑介於30至50微米。According to an embodiment of the present invention, the spot diameter of the above-mentioned laser dots is between 30 and 50 microns.
根據本發明的實施例，上述的雷射網點的深度介於5至10微米。According to an embodiment of the present invention, the depth of the laser dots is between 5 and 10 microns.
根據本發明的實施例，上述的雷射網點是隨機分佈於邊緣區域的每一毫米發光二極體單元中。According to an embodiment of the present invention, the above-mentioned laser dots are randomly distributed in each millimeter of light-emitting diode units in the edge area.
根據本發明的實施例，上述分佈於邊緣區域的每一毫米發光二極體單元中的雷射網點的數量為500至1000個。According to an embodiment of the present invention, the number of laser dots in each millimeter of the light-emitting diode unit distributed in the edge area is 500 to 1000.
根據本發明的實施例，上述的次毫米發光二極體單元分別包括複數次毫米發光二極體，且於次毫米發光二極體的外側設有一擋牆。According to an embodiment of the present invention, the above-mentioned sub-millimeter light-emitting diode units each include a plurality of sub-millimeter light-emitting diodes, and a retaining wall is provided outside the sub-millimeter light-emitting diodes.
根據本發明的實施例，上述的印刷電路板的表面包括一阻焊層，次毫米發光二極體單元和雷射網點設置於阻焊層上。According to an embodiment of the present invention, the surface of the printed circuit board includes a solder resist layer, and sub-millimeter light emitting diode units and laser dots are disposed on the solder resist layer.
根據本發明的實施例，上述形成雷射網點的步驟是使用二氧化碳雷射加工來進行。According to an embodiment of the present invention, the above step of forming laser dots is performed using carbon dioxide laser processing.
與先前技術相比，本發明具有以下優勢： （1） 本發明能夠突破現有的直下式次毫米發光二極體背光模組於採用區域調光方式調變後仍舊存在暗帶缺陷的現象，進而導致顯示效果不佳的問題。 （2） 本發明所設計的雷射網點可以有效增加背光模組的邊緣出光效率，再輔以區域調光技術，使邊緣輝度的均勻性可獲得有效改善，從而大幅提升背光模組的出光效能。 Compared with prior art, the present invention has the following advantages: (1) The present invention can overcome the problem that existing direct-lit sub-millimeter light-emitting diode backlight modules still have dark band defects after using local dimming, which in turn leads to poor display effects. (2) The laser dots designed in this invention can effectively increase the edge light emission efficiency of the backlight module, and supplemented by regional dimming technology, the uniformity of edge brightness can be effectively improved, thereby greatly improving the light emission efficiency of the backlight module. .
底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。It will be easier to understand the purpose, technical content, characteristics and achieved effects of the present invention through detailed description of specific embodiments below.
本發明的實施例將藉由下文配合相關圖式進一步加以解說。盡可能的，於圖式與說明書中，相同標號係代表相同或相似構件。於圖式中，基於簡化與方便標示，形狀與厚度可能經過誇大表示。可以理解的是，未特別顯示於圖式中或描述於說明書中之元件，為所屬技術領域中具有通常知識者所知之形態。本領域之具有通常知識者可依據本發明之內容而進行多種之改變與修改。The embodiments of the present invention will be further explained in conjunction with relevant drawings below. Wherever possible, the same reference numbers are used in the drawings and description to refer to the same or similar components. In the drawings, shapes and thicknesses may be exaggerated for simplicity and ease of notation. It will be understood that components not specifically shown in the drawings or described in the specification are in a form known to those of ordinary skill in the art. Those with ordinary knowledge in the art can make various changes and modifications based on the contents of the present invention.
正如先前技術所描述的，目前習知的直下式次毫米發光二極體背光模組的四周受到邊際效應影響容易出現邊緣輝度較低而導致均勻性不佳的問題，且即使透過區域調光方式調變後仍舊存在暗帶缺陷，進而導致顯示效果不佳的問題。為了解決上述技術問題，本發明的基本思想是提供一種直下式次毫米發光二極體背光模組及其製造方法，透過雷射網點的形成，而可以有效增加邊緣出光效率，進一步使得應用區域調光技術調控後存在暗帶缺陷的問題有所改善。As described in the previous technology, the current direct-type sub-millimeter LED backlight module is affected by the edge effect and is prone to low edge brightness, resulting in poor uniformity, and even through the local dimming method There are still dark band defects after modulation, which leads to poor display effects. In order to solve the above technical problems, the basic idea of the present invention is to provide a direct-type sub-millimeter light-emitting diode backlight module and a manufacturing method thereof. Through the formation of laser dots, the edge light extraction efficiency can be effectively increased, further enabling application area modulation. The problem of dark band defects has been improved after light technology control.
請參照第2圖，其為本發明之實施例所提供的直下式次毫米發光二極體背光模組的製造方法之流程圖。同時，請參照第3A圖至第5圖，其繪示本發明之實施例所提供的直下式次毫米發光二極體背光模組的製造方法中對照各個步驟的示意圖；其中，第3A圖為本發明之實施例中形成多個次毫米發光二極體單元的印刷電路板之示意圖，第3B圖為第3A圖的印刷電路板的邊緣區域之局部放大圖，第4A圖為本發明之實施例中形成雷射網點於邊緣區域內的毫米發光二極體單元中之示意圖，第4B圖為本發明之實施例中形成雷射網點的印刷電路板的邊緣區域之局部放大圖，第4C圖為本發明之實施例中形成雷射網點的印刷電路板之示意圖，第5圖為本發明之實施例中完成覆蓋封裝層之步驟後的結構剖面圖。以下詳細說明本發明之實施例的直下式次毫米發光二極體背光模組的製造方法中的各個步驟。Please refer to FIG. 2 , which is a flow chart of a manufacturing method of a direct sub-millimeter light emitting diode backlight module according to an embodiment of the present invention. At the same time, please refer to Figures 3A to 5 , which are schematic diagrams comparing various steps in the manufacturing method of the direct-type sub-millimeter light-emitting diode backlight module provided by the embodiment of the present invention; Figure 3A is A schematic diagram of a printed circuit board on which multiple sub-millimeter light-emitting diode units are formed in an embodiment of the present invention. Figure 3B is a partial enlarged view of the edge area of the printed circuit board in Figure 3A. Figure 4A is an implementation of the present invention. A schematic diagram of forming laser dots in a millimeter light-emitting diode unit in the edge area in this example, Figure 4B is a partial enlarged view of the edge area of a printed circuit board where laser dots are formed in an embodiment of the present invention, Figure 4C It is a schematic diagram of a printed circuit board on which laser dots are formed in an embodiment of the present invention. Figure 5 is a structural cross-sectional view after completing the step of covering the encapsulation layer in the embodiment of the present invention. Each step in the manufacturing method of the direct sub-millimeter light emitting diode backlight module according to the embodiment of the present invention is described in detail below.
首先，見步驟S10，如第3A圖所示，提供一印刷電路板10，此印刷電路板10的表面劃分多個分區，並於印刷電路板10的表面的周圍定義一邊緣區域11（圖中以粗線區隔出來的範圍）。本發明中，邊緣區域11的範圍是根據背光模組於邊際效應下邊緣暗帶的大小來決定，而背光模組的邊緣暗帶的大小和產品設計有關，當產品設計不同，則邊緣暗帶的大小也會有所不同。另外，本實施例之印刷電路板10的表面包括一阻焊層12（見第4A圖），阻焊層12的材質是二氧化鈦（俗稱為鈦白粉），其為具有保護作用之白色顏料。First, see step S10. As shown in Figure 3A, a printed circuit board 10 is provided. The surface of the printed circuit board 10 is divided into multiple zones, and an edge area 11 is defined around the surface of the printed circuit board 10 (in the figure). range separated by bold lines). In the present invention, the range of the edge area 11 is determined based on the size of the edge dark band of the backlight module under the marginal effect, and the size of the edge dark band of the backlight module is related to the product design. When the product design is different, the edge dark band The size will also vary. In addition, the surface of the printed circuit board 10 in this embodiment includes a solder resist layer 12 (see Figure 4A). The solder resist layer 12 is made of titanium dioxide (commonly known as titanium dioxide), which is a white pigment with a protective effect.
接著，見步驟S20，形成矩陣排列的多個次毫米發光二極體單元20於印刷電路板10的表面上。本實施例中，在印刷電路板10的表面共有44 x 59 =2596個分區，每個分區設置一個次毫米發光二極體單元20，且次毫米發光二極體單元20涵蓋印刷電路板10的邊緣區域11。本實施例中，邊緣區域11大約為沿著印刷電路板10四周圍繞的外側5排分區的範圍，為了清楚說明，請參照第3B圖所示的局部放大圖，此部分之邊緣區域11包括有6 x 6 =36個分區，也就是說，共設置有6 x 6 =36個次毫米發光二極體單元20，每一次毫米發光二極體單元20包括有多顆次毫米發光二極體21，且這些次毫米發光二極體21的外側設有一擋牆22（見第4A圖），擋牆22為不透明的樹脂膠層，將多個次毫米發光二極體21照向周圍的光線遮擋。本實施例中，每一次毫米發光二極體單元20包括四顆次毫米發光二極體21，其規則排列成2x2的陣列，但本發明不限於此，可依據實際產品設計，每一次毫米發光二極體單元20內可包含任意顆次毫米發光二極體21，且在每一次毫米發光二極體單元20內次毫米發光二極體21的排列方式可以是規則排列， 也可以是隨機排列。Next, in step S20 , a plurality of sub-millimeter light-emitting diode units 20 arranged in a matrix are formed on the surface of the printed circuit board 10 . In this embodiment, there are a total of 44 x 59 = 2596 partitions on the surface of the printed circuit board 10 , each partition is provided with a sub-millimeter light-emitting diode unit 20 , and the sub-millimeter light-emitting diode unit 20 covers the printed circuit board 10 Edge area 11. In this embodiment, the edge area 11 is approximately the range of the five outer rows of partitions surrounding the printed circuit board 10. For clear explanation, please refer to the partial enlarged view shown in Figure 3B. The edge area 11 of this part includes 6 x 6 =36 partitions, that is to say, a total of 6 x 6 =36 sub-millimeter light-emitting diode units 20 are provided, and each sub-millimeter light-emitting diode unit 20 includes a plurality of sub-millimeter light-emitting diodes 21 , and there is a blocking wall 22 (see Figure 4A) on the outside of these sub-millimeter light-emitting diodes 21. The blocking wall 22 is an opaque resin glue layer that blocks the surrounding light from the multiple sub-millimeter light-emitting diodes 21. . In this embodiment, each sub-millimeter light-emitting diode unit 20 includes four sub-millimeter light-emitting diodes 21, which are regularly arranged in a 2x2 array. However, the invention is not limited to this. It can be based on actual product design. The diode unit 20 can contain any sub-millimeter light-emitting diodes 21, and the arrangement of the sub-millimeter light-emitting diodes 21 in each sub-millimeter light-emitting diode unit 20 can be a regular arrangement or a random arrangement. .
然後，見步驟S30，如第4A圖所示，採用雷射加工方式，以雷射探頭50對準每一次毫米發光二極體單元20中多個次毫米發光二極體21之間的間隙，形成多個雷射網點30於印刷電路板10的邊緣區域11的每一次毫米發光二極體單元20中，且次毫米發光二極體單元20和雷射網點30皆設置於阻焊層12上。本實施例中，形成這些雷射網點30的步驟是使用二氧化碳雷射加工來進行，使用的雷射波長範圍具體為10.6微米（μm）。如第6圖所示，其顯示本發明之實施例所形成的雷射網點30的表面微觀結構圖。此雷射網點30結構的外圈31為雷射加工後的噴濺物所形成的凸面結構，內圈32為凹面孔洞，凸面結構一般稱為火山口。Then, see step S30. As shown in Figure 4A, a laser processing method is used to align the laser probe 50 with the gaps between the plurality of sub-millimeter light-emitting diodes 21 in each sub-millimeter light-emitting diode unit 20. A plurality of laser dots 30 are formed in each sub-millimeter light-emitting diode unit 20 in the edge area 11 of the printed circuit board 10 , and both the sub-millimeter light-emitting diode units 20 and the laser dots 30 are disposed on the solder resist layer 12 . In this embodiment, the step of forming these laser dots 30 is performed using carbon dioxide laser processing, and the laser wavelength range used is specifically 10.6 microns (μm). As shown in FIG. 6 , it shows the surface microstructure of the laser dots 30 formed by the embodiment of the present invention. The outer ring 31 of the laser dot structure 30 is a convex structure formed by the spatter after laser processing, and the inner ring 32 is a concave hole. The convex structure is generally called a crater.
本發明中，雷射網點30的數量與雷射網點30的大小和單一毫米發光二極體單元20的面積有關。具體而言，本實施例所形成的雷射網點30的點徑為50微米，若每一次毫米發光二極體單元20的面積大小為4x4 mm 2， 則建議可形成上千個雷射網點30方可發揮增光效果。一般來說，本發明之雷射網點30的點徑是介於30至50微米，雷射網點30的深度是介於5至10微米，且分佈於邊緣區域11的每一毫米發光二極體單元20中的雷射網點30的數量為500至1000個。進一步地，如第4B圖所示，本發明在邊緣區域11的每一毫米發光二極體單元20中的雷射網點30的排列方式較佳為隨機分佈，因為採取隨機分佈則其散光效果更好，邊緣亮度會更均勻，若是採取有序分佈，反而容易造成邊緣亮度分佈有侷限性，不易散光，而導致亮度不均勻。如第4C圖所示，本實施例之雷射網點30僅分佈於印刷電路板10四周的邊緣區域11，而未分佈於印刷電路板10的中央區域，藉以解決邊緣暗帶的問題，使背光模組的出光效果更為均勻。 In the present invention, the number of laser dots 30 is related to the size of the laser dots 30 and the area of the single millimeter light-emitting diode unit 20 . Specifically, the spot diameter of the laser dots 30 formed in this embodiment is 50 microns. If the area size of each millimeter light-emitting diode unit 20 is 4x4 mm 2 , it is recommended that thousands of laser dots 30 can be formed. Only then can the brightening effect be exerted. Generally speaking, the diameter of the laser dots 30 of the present invention is between 30 and 50 microns, and the depth of the laser dots 30 is between 5 and 10 microns, and is distributed in every millimeter of the light-emitting diodes in the edge area 11 The number of laser dots 30 in the unit 20 is 500 to 1000. Furthermore, as shown in Figure 4B, the arrangement of the laser dots 30 in each millimeter of the light-emitting diode unit 20 in the edge area 11 of the present invention is preferably randomly distributed, because the astigmatism effect is better when randomly distributed. Well, the edge brightness will be more uniform. If it is distributed in an orderly manner, it will easily cause the edge brightness distribution to be limited and difficult to astigmatism, resulting in uneven brightness. As shown in Figure 4C, the laser dots 30 of this embodiment are only distributed in the edge areas 11 around the printed circuit board 10, but not in the central area of the printed circuit board 10, thereby solving the problem of edge dark bands and making the backlight The light emission effect of the module is more uniform.
最後，見步驟S40，如第5圖所示，形成一封裝層40覆蓋於次毫米發光二極體單元20且填平雷射網點30，來得到本發明之直下式次毫米發光二極體背光模組。本實施例中，封裝層40的材質為矽膠，多個次毫米發光二極體21發出的光線能夠透過封裝層40向外傳播，擋牆22圍設於封裝層40的周圍。有關封裝層40的形成，其利用點膠機將矽膠直接注入次毫米發光二極體單元30中，矽膠受到注膠壓力會自動流入不平整的雷射網點30所形成的孔洞內，進而填充孔洞，將雷射網點30填平，使得矽膠下表面形成類似導光板（Light Guide Plate, LGP）的作用。Finally, see step S40. As shown in Figure 5, an encapsulation layer 40 is formed to cover the sub-millimeter light-emitting diode unit 20 and fill the laser dots 30 to obtain the direct-type sub-millimeter light-emitting diode backlight of the present invention. Mods. In this embodiment, the packaging layer 40 is made of silicone. The light emitted by the plurality of sub-millimeter light-emitting diodes 21 can propagate outward through the packaging layer 40 . The blocking wall 22 is surrounding the packaging layer 40 . Regarding the formation of the encapsulation layer 40, a dispensing machine is used to directly inject silicone into the sub-millimeter light-emitting diode unit 30. The silicone will automatically flow into the holes formed by the uneven laser dots 30 under the injection pressure, thereby filling the holes. , fill in the laser dots 30 so that the lower surface of the silicone forms a function similar to a light guide plate (LGP).
以下藉由分析雷射網點的存在對於直下式次毫米發光二極體背光模組的出光情形之影響，以對於本發明的原理和功效作進一步詳細說明，但不應將其理解為對本發明保護範圍的限制。By analyzing the impact of the existence of laser dots on the light emission of direct sub-millimeter LED backlight modules, the principles and effects of the present invention will be further described in detail below, but this should not be understood as a protection of the present invention. Scope limitations.
請參照第7圖和第8圖，其分別繪示先前技術和本發明之實施例所提供的直下式次毫米發光二極體背光模組的出光情形。Please refer to FIGS. 7 and 8 , which respectively illustrate the light emitting conditions of the direct sub-millimeter light emitting diode backlight module provided by the prior art and embodiments of the present invention.
根據光學原理，在第7-8圖中，當次毫米發光二極體21所發出的光線從折射率為n1的第一介質（即封裝層）進入折射率為n2的第二介質（即空氣）中，假設封裝層40的材質為矽膠，其折射率n 1為1.5，空氣的折射率n 2為1，光線從矽膠進入空氣的入射角為θ 1，折射角為θ 2， 由折射定律 n 1x sinθ 1= n 2x sinθ 2， 帶入數據後 1.5 x sinθ 1= 1 x sin90˚ ， 推得 sin θ 1= 1/1.5 = 0.6667， 最後推得 θ 1= 41.81 ˚ ，即為臨界角（critical angle）θc 。 According to optical principles, in Figures 7-8, when the light emitted by the sub-millimeter light-emitting diode 21 enters the second medium with a refractive index n2 (i.e., air) from the first medium (i.e., the encapsulation layer) with a refractive index n1 ), assuming that the material of the encapsulation layer 40 is silicone, its refractive index n 1 is 1.5, the refractive index n 2 of air is 1, the incident angle of light entering the air from silicone is θ 1 , and the refraction angle is θ 2 , according to the law of refraction n1 _ _ _ _ _ _ Angle (critical angle) θc.
如第7圖所示之直下式次毫米發光二極體背光模組不存在雷射網點，在光程Ⅰ的情況，若入射角θ 1＞ θc ，則光線會在封裝層40內發生全反射現象，此時光線無法折射出封裝層40，進而影響出光效率；在光程Ⅱ的情況，光線射到擋牆22時，無法第一時間射出封裝層40，會經由多次反射才射出封裝層40，且途中經歷多次耗損，同樣會影響出光效率。 As shown in Figure 7, the direct-type sub-millimeter light-emitting diode backlight module does not have laser dots. In the case of optical path I, if the incident angle θ 1 > θc, the light will be totally reflected in the packaging layer 40 Phenomenon, at this time, the light cannot refract out of the encapsulation layer 40, thereby affecting the light extraction efficiency; in the case of optical path II, when the light hits the blocking wall 22, it cannot emit out of the encapsulation layer 40 at the first time, and will emit out of the encapsulation layer after multiple reflections. 40, and experiencing multiple losses along the way will also affect the light extraction efficiency.
如第8圖所示之直下式次毫米發光二極體背光模組的邊緣區域於封裝層40下表面分佈有雷射網點30，在光程Ⅰ的情況，光線經由封裝層40下表面的雷射網點30會破壞全反射現象，進而增加出光效率；在光程Ⅱ的情況，光線經由封裝層40下表面的雷射網點30會減少反射次數，使其光線耗損減少，進而增加出光效率。As shown in Figure 8, the edge area of the direct-type sub-millimeter LED backlight module has laser dots 30 distributed on the lower surface of the encapsulation layer 40. In the case of optical path I, the light passes through the laser dots on the lower surface of the encapsulation layer 40. The laser dots 30 will destroy the total reflection phenomenon, thereby increasing the light extraction efficiency; in the case of optical path II, the light passing through the laser dots 30 on the lower surface of the encapsulation layer 40 will reduce the number of reflections, thereby reducing light loss, thereby increasing the light extraction efficiency.
綜上所述，本發明所提供之直下式次毫米發光二極體背光模組及其製造方法，透過於背光模組四周的邊緣區域製作雷射網點，此雷射網點的結構會在矽膠下表面形成類似導光板的作用，能讓邊緣出光效率獲得明顯的改善，可以有效降低背光模組四周的邊緣輝度較低而導致均勻性不佳的問題，同時，可在搭配區域調光技術的條件下，減輕甚至消除背光模組邊緣所產生之暗帶缺陷，讓背光模組的出光效能大幅提升，搭配應用之顯示器畫面品質亦可隨之提升，藉以提高競爭優勢，增大市場佔有率。To sum up, the direct-type sub-millimeter light-emitting diode backlight module and its manufacturing method provided by the present invention make laser dots in the edge area around the backlight module. The structure of this laser dot will be under the silicone. The surface forms a function similar to a light guide plate, which can significantly improve the edge light emission efficiency, and can effectively reduce the problem of poor uniformity caused by low edge brightness around the backlight module. At the same time, it can be used with regional dimming technology By reducing or even eliminating the dark band defects produced at the edges of the backlight module, the light output performance of the backlight module can be greatly improved, and the picture quality of the display used with it can also be improved accordingly, thereby improving competitive advantage and increasing market share.
唯以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾，均應包括於本發明之申請專利範圍內。The above descriptions are only preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Therefore, all equivalent changes or modifications made in accordance with the characteristics and spirit described in the scope of the present invention shall be included in the patent scope of the present invention.
1:次毫米發光二極體 2:電子元件 3:金屬外框 10:印刷電路板 11:邊緣區域 12:阻焊層 20:次毫米發光二極體單元 21:次毫米發光二極體 22:擋牆 30:雷射網點 31:外圈 32:內圈 40:封裝層 50:雷射探頭 θ 1:入射角 θ 2:折射角 S10-S40:步驟 1: Sub-millimeter light-emitting diode 2: Electronic component 3: Metal frame 10: Printed circuit board 11: Edge area 12: Solder mask 20: Sub-millimeter light-emitting diode unit 21: Sub-millimeter light-emitting diode 22: Barrier 30: Laser dot 31: Outer ring 32: Inner ring 40: Encapsulation layer 50: Laser probe θ 1 : Incident angle θ 2 : Refraction angle S10-S40: Steps
第1圖為先前技術的一種直下式次毫米發光二極體背光模組的邊緣區域的局部放大圖。 第2圖為本發明之實施例所提供的直下式次毫米發光二極體背光模組的製造方法的流程圖。 第3A圖為本發明之實施例中形成多個次毫米發光二極體單元的印刷電路板之示意圖。 第3B圖為第3A圖的印刷電路板的邊緣區域之局部放大圖。 第4A圖為本發明之實施例中形成雷射網點於邊緣區域內的毫米發光二極體單元中之示意圖。 第4B圖為本發明之實施例中形成雷射網點於印刷電路板的邊緣區域之局部放大圖。 第4C圖為本發明之實施例中形成雷射網點的印刷電路板之示意圖。 第5圖為本發明之實施例中完成覆蓋封裝層之步驟後的結構剖面圖。 第6圖為本發明之實施例所提供的直下式次毫米發光二極體背光模組的雷射網點的表面微觀結構圖。 第7圖為先前技術的一種直下式次毫米發光二極體背光模組的出光情形。 第8圖為本發明之實施例所提供的直下式次毫米發光二極體背光模組的出光情形。 Figure 1 is a partial enlarged view of the edge area of a direct-type sub-millimeter light-emitting diode backlight module in the prior art. FIG. 2 is a flow chart of a method for manufacturing a direct sub-millimeter LED backlight module according to an embodiment of the present invention. FIG. 3A is a schematic diagram of a printed circuit board on which multiple sub-millimeter light-emitting diode units are formed in an embodiment of the present invention. Figure 3B is a partial enlarged view of the edge area of the printed circuit board in Figure 3A. Figure 4A is a schematic diagram of forming laser dots in a millimeter light-emitting diode unit in the edge area according to an embodiment of the present invention. Figure 4B is a partial enlarged view of the edge area of the printed circuit board formed by laser dots in an embodiment of the present invention. Figure 4C is a schematic diagram of a printed circuit board on which laser dots are formed in an embodiment of the present invention. Figure 5 is a structural cross-sectional view after completing the step of covering the encapsulation layer in the embodiment of the present invention. Figure 6 is a surface microstructure diagram of the laser dots of the direct sub-millimeter LED backlight module provided by the embodiment of the present invention. Figure 7 shows the light emission situation of a direct-type sub-millimeter light-emitting diode backlight module in the prior art. Figure 8 shows the light emission situation of the direct sub-millimeter light emitting diode backlight module provided by the embodiment of the present invention.
10:印刷電路板 10:Printed circuit board
12:阻焊層 12: Solder mask
20:次毫米發光二極體單元 20: Sub-millimeter LED unit
21:次毫米發光二極體 21: Sub-millimeter LED
22:擋牆 22: retaining wall
30:雷射網點 30:Laser outlets
40:封裝層 40: Encapsulation layer
Claims (13)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211253151.9A CN115469483B (en) | 2022-10-13 | 2022-10-13 | Direct type sub-millimeter light emitting diode backlight module and manufacturing method thereof |
| CN202211253151.9 | 2022-10-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI828375B true TWI828375B (en) | 2024-01-01 |
| TW202416027A TW202416027A (en) | 2024-04-16 |
Family
ID=84337486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111139528A TWI828375B (en) | 2022-10-13 | 2022-10-18 | Direct-lit mini-led backlight module and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115469483B (en) |
| TW (1) | TWI828375B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116466514B (en) * | 2023-04-18 | 2024-07-16 | 业成光电（深圳）有限公司 | Light emitting layout structure of backlight module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101634726A (en) * | 2008-07-21 | 2010-01-27 | 鸿富锦精密工业（深圳）有限公司 | Light panel and manufacturing method as well as backlight module adopting same |
| CN113985656A (en) * | 2021-10-27 | 2022-01-28 | 合肥京东方光电科技有限公司 | Backlight source, backlight module and display device |
| CN215895180U (en) * | 2021-06-08 | 2022-02-22 | 深圳市隆利科技股份有限公司 | Lamp panel and direct type backlight structure |
| TW202227886A (en) * | 2020-12-31 | 2022-07-16 | 友達光電股份有限公司 | Backlight module |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM289865U (en) * | 2005-11-08 | 2006-04-21 | Lighthouse Technology Co Ltd | Sectional light emitting diode backlight unit |
| KR20110071634A (en) * | 2009-12-21 | 2011-06-29 | 엘지디스플레이 주식회사 | Printed circuit board mounting ic chip for driving display device |
| US9019444B2 (en) * | 2012-03-27 | 2015-04-28 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Edge-type backlight module and liquid crystal display using the same |
| CN104534417B (en) * | 2014-12-24 | 2018-06-26 | 安徽芯瑞达科技股份有限公司 | A kind of PCB and its down straight aphototropism mode set of application |
| CN209803516U (en) * | 2019-04-26 | 2019-12-17 | 深圳市隆利科技股份有限公司 | Backlight module with light scattering structure |
-
2022
- 2022-10-13 CN CN202211253151.9A patent/CN115469483B/en active Active
- 2022-10-18 TW TW111139528A patent/TWI828375B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101634726A (en) * | 2008-07-21 | 2010-01-27 | 鸿富锦精密工业（深圳）有限公司 | Light panel and manufacturing method as well as backlight module adopting same |
| TW202227886A (en) * | 2020-12-31 | 2022-07-16 | 友達光電股份有限公司 | Backlight module |
| CN215895180U (en) * | 2021-06-08 | 2022-02-22 | 深圳市隆利科技股份有限公司 | Lamp panel and direct type backlight structure |
| CN113985656A (en) * | 2021-10-27 | 2022-01-28 | 合肥京东方光电科技有限公司 | Backlight source, backlight module and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115469483A (en) | 2022-12-13 |
| CN115469483B (en) | 2024-05-17 |
| TW202416027A (en) | 2024-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11221442B2 (en) | Backlight structure and display device | |
| US10871607B2 (en) | Lighting device and display device | |
| JP6209527B2 (en) | Light emitting module and lens | |
| US20190115329A1 (en) | Led module assemblies for displays | |
| DE102019133775A1 (en) | BACKLIGHT UNIT AND DISPLAY DEVICE THAT HAS IT | |
| US11156341B2 (en) | Backlight module and display device | |
| TWI671574B (en) | Light source module and display appartus | |
| TW202028825A (en) | Light-emitting mechanism and backlight module | |
| TWI828375B (en) | Direct-lit mini-led backlight module and manufacturing method thereof | |
| US10754196B2 (en) | Lighting device and display device | |
| US20220099880A1 (en) | Light emitting module and planar light source | |
| TW202121030A (en) | Surface-emitting light source capable of suppressing unevenness in luminance of leaked light from a lighting region to an adjacent extinguishing region | |
| KR101707574B1 (en) | backlight unit having light blocking pattern and method for forming light blocking pattern of the same | |
| US20190088186A1 (en) | Display device | |
| JP2019197875A (en) | Optoelectronic package | |
| KR102298380B1 (en) | Backlight unit and liquid crystal display device including the same | |
| US10505086B2 (en) | Light source device | |
| US11644607B2 (en) | Lighting device and display device | |
| TW202129381A (en) | Direct type backlight device | |
| CN113805384B (en) | Backlight module | |
| KR20110127387A (en) | Backlight unit and display apparatus comprising thereof | |
| TW202131051A (en) | Light distribution control element | |
| US11181772B2 (en) | Light-emitting module, method for manufacturing the same, and liquid-crystal display device | |
| KR101372961B1 (en) | Backlight Unit Having Grid Serration Pattern And Liquid Crystal Display Device Including The Same | |
| KR100663909B1 (en) | Side illumination lens and luminescent device using the same |