TWI827546B - Lead frame, package for light emitting device, light emitting device, and method for manufacturing light emitting device - Google Patents

Abstract

A lead frame includes a base material and two or more silver-containing layers. The base material is composed of a metal. The two or more silver-containing layers are stacked on the base material. The two or more silver-containing layers include an uppermost silver-containing layer containing sulfur, and a lower silver-containing layer. The lower silver-containing layer contains no selenium or the lower silver-containing layer is composed substantially only of silver. A method for manufacturing a light emitting device includes: preparing a lead frame; preparing a package including the lead frame; and mounting a light emitting element on the package. The lead frame is prepared by: providing a base material; forming an underlying metal on the base material by plating to form an underlayer; and forming two or more silver-containing stacked layers on the underlayer, the two or more silver-containing stacked layers including an uppermost silver-containing layer containing sulfur.

Description

Lead frame, package for light-emitting device, light-emitting device and manufacturing method of light-emitting device

The present disclosure relates to a lead frame, a package for a light-emitting device, a light-emitting device and a manufacturing method of the light-emitting device.

In light-emitting devices using semiconductor light-emitting elements (hereinafter also referred to as "light-emitting elements"), packages in which silver (Ag) having a high reflectivity for light from the light-emitting elements are provided on the surface are widely used (for example, Patent Document 1 ~4).

In these light-emitting devices, the light extraction efficiency is improved by utilizing a partially or entirely laminated silver-plated layer or by adjusting the composition or glossiness of the silver-plated layer through a laminated structure.

[Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2002-094130

[Patent Document 2] Japanese Patent Application Publication No. Sho 61-148883

[Patent Document 3] Japanese Patent Application Laid-Open No. 2010-199166

[Patent Document 4] Japanese Patent Application Publication No. 2014-99496

However, the current situation has not yet achieved a sufficient improvement in light extraction efficiency that is satisfactory.

In view of this situation, the purpose of this disclosure is to provide a lead frame and package for a light-emitting device that can further improve light extraction efficiency, and to provide a manufacturing method of such a light-emitting device and the light-emitting device.

The present invention includes the following inventions.

(1) A lead frame comprising: a base material containing metal, and two or more Ag-containing layers laminated on the base material. Among the two or more Ag-containing layers, the uppermost Ag-containing layer contains sulfur. , the lower Ag-containing layer is a layer other than selenium or unavoidable impurities.

(2) A package having a substrate filled in such a way that the Ag-containing layer of the uppermost layer of the lead frame in the present application is exposed.

(3) A light-emitting device provided with the above-mentioned package and a light-emitting element, and the above-mentioned light-emitting element is mounted on the upper surface of the exposed uppermost Ag-containing layer of the package.

(4) A method of manufacturing a light-emitting device, which includes the following steps: A base material is prepared, a base metal is formed on the base metal by plating, and an Ag-containing layer is formed on the base metal by plating. The Ag-containing layer includes two or more laminated layers and is the uppermost layer of the two or more laminated layers. Containing sulfur, a lead frame is prepared, a package equipped with the lead frame is prepared, and the light-emitting element is mounted on the package.

According to the present disclosure, a lead frame and package for a light emitting device that can further improve light extraction efficiency can be provided.

In addition, by using such a lead frame or package, a light-emitting device and a manufacturing method of the light-emitting device that further improve light extraction efficiency can be provided.

1:Light reflective material

1a: base material

1b: Bottom plating layer

1c: Intermediate plating layer

1c1: 1st intermediate plating layer

1c2: 2nd intermediate plating layer

1d: Ag-containing layer

1d1: 1st Ag-containing layer

1d2: 2nd Ag-containing layer

2:Light-emitting components

3: Base material (resin molded body)

4:Joining components

5:Sealing components

6: line

10, 20: Lighting device

31: concave part

32: Bottom face

100: Coiled before lead frame plating

101A: Alkaline electrolytic degreasing treatment tank

101B: Alkaline electrolytic degreasing liquid storage tank

102A: Acid neutralization treatment tank

102B: Acid neutralization liquid storage tank

103A: Bottom plating 1b treatment tank

103B: Bottom plated 1b liquid storage tank

104A: Intermediate plating 1c1 treatment tank

104B: Intermediate plating 1c1 liquid storage tank

105A: Intermediate plating 1c2 treatment tank

105B: Intermediate plating 1c2 liquid storage tank

106A: Ag1d1 plating treatment tank

106B: Ag1d1 plated liquid storage tank

106C: Ag1d1-plated liquid storage tank

107A: Ag1d2 plating treatment tank

107B: Ag1d2-plated liquid storage tank

108:Hot air drying device

109: Coiled after lead frame plating

110: Lead frame

FIG. 1A is a schematic partial enlarged cross-sectional view for explaining one embodiment of the lead frame.

FIG. 1B is a schematic partial enlarged cross-sectional view for explaining another embodiment of the lead frame.

FIG. 2A is a schematic top view illustrating an embodiment of a light-emitting device using the lead frame of FIG. 1 .

FIG. 2B is a schematic cross-sectional view of the light-emitting device of FIG. 2A taken along line II-II'.

3A to 3D are schematic cross-sectional step diagrams for explaining the manufacturing method of the light-emitting device of FIG. 2A.

FIG. 4A is a schematic perspective view illustrating a light-emitting device according to another embodiment.

FIG. 4B is a schematic cross-sectional view of the light-emitting device of FIG. 4A taken along line III-III'.

FIG. 5A is a step diagram illustrating a roll-to-roll plating apparatus according to an embodiment of a lead frame having two or more Ag-containing layers.

5B is a step diagram illustrating a roll-to-roll plating apparatus according to one embodiment of a lead frame having two or more Ag-containing layers.

FIG. 6 is a graph showing the measurement results of the blue radiation beam of the light emitting device using the lead frame of FIG. 1A.

FIG. 7 is a graph showing the measurement results of the green radiation beam of the light emitting device using the lead frame of FIG. 1A.

FIG. 8 is a graph showing the measurement results of the red radiation beam of the light emitting device using the lead frame of FIG. 1A.

FIG. 9 is a graph showing the measurement results of the total white light beam of the light-emitting device using the lead frame of FIG. 1A.

Modes for implementing the present invention will be described below with reference to the drawings. However, the forms shown below are examples of a lead frame, a package, a light-emitting device, and a method of manufacturing a light-emitting device for embodying the technical idea of the present invention, and do not limit the present invention as follows. In addition, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of the constituent parts described in the embodiments are not intended to limit the scope of the present invention and are merely examples. In addition, the size, positional relationship, etc. of the members shown in each drawing may be exaggerated for clear explanation.

Embodiment 1: Lead frame

The lead frame of this embodiment includes a base material and two or more layers of special materials laminated on the base material. The Ag-containing layer, that is, the uppermost Ag-containing layer contains sulfur, and the lower Ag-containing layer does not contain selenium or layers other than unavoidable impurities.

As a method for efficiently producing an Ag-containing layer, electroplating is preferred. When producing an Ag-containing layer containing sulfur by electroplating, in the plating solution used, in addition to the Ag metal complex, The surface of the Ag-containing layer is smoothed to create a surface with higher light reflectivity, and various organic sulfur compounds are added in small amounts. In this way, the Ag-containing layer precipitated from the Ag plating solution adding organic sulfur compounds can obtain high reflectivity and smooth precipitated crystal particles, but contains trace amounts of organic sulfur components during plating. The sulfur referred to here is considered to be organic sulfur, which is different from silver sulfide, which is known to react with hydrogen sulfide in the air to generate silver (I) sulfide and cause blackening.

_H2S +Ag→ _Ag2S + _H2

Therefore, even if there is a trace amount of sulfur in the Ag-containing layer, it will not accelerate the decrease in reflectivity caused by black discoloration like silver sulfide.

Furthermore, when the surface of the base material in the lead frame is plated with silver, if the silver turns black, the reflectivity drops significantly. Therefore, the silver is usually placed in an environment where it is not vulcanized.

Generally, if the glossiness of the surface of a light-reflecting member such as a lead frame is increased, the reflectivity of light is increased, and the reflected light can increase the brightness of the light-emitting device. However, since the light reflection due to the increase in gloss is regular reflection, although the entire central surface of the light-emitting device is bright and strong light can be obtained, the light becomes weaker in the peripheral parts, resulting in higher directivity and lower light distribution. light-emitting device. This kind of light-emitting device is suitable as a spotlight, but it is difficult to consider it suitable for outdoor advertising display boards, light-emitting display boards, traffic signals, etc., or for general lighting. In such a light-emitting device, if a light-diffusion material is disposed at the light emitting part, the uniformity of the emitted light over the entire surface of the light-emitting device can be achieved. on the other hand, Since the light diffusion material produces light absorption, the light extraction efficiency is reduced, and it is difficult to adjust its dispersion shape and component, resulting in brightness or color deviation.

Therefore, as mentioned above, by selectively arranging two or more specific Ag-containing layers, the brightness can be improved without increasing the gloss, that is, a higher total beam can be achieved, and a significantly improved Lead frames and light-emitting devices for light extraction efficiency. Moreover, by selectively combining such specific Ag-containing layers, relatively simple manufacturing equipment and manufacturing steps can be used to realize lead frames and light-emitting devices that can obtain such advantageous characteristics without increasing manufacturing costs. wait. Therefore, it is also possible to provide a lead frame that can constitute a light-emitting device without using a light-diffusing material whose dispersion form, component, etc. are difficult to adjust.

As described below, the lead frame may further include one or more layers, such as an intermediate layer, a base layer, etc., in addition to the base materials and two or more Ag-containing layers.

Specifically, as shown in FIG. 1A , the lead frame 1 may further include a base layer 1 b laminated on the base material 1 a and an intermediate layer 1 c laminated thereon. The intermediate layer 1c includes, for example, a first intermediate layer 1c1, a second intermediate layer 1c2, and the like, and two or more Ag-containing layers 1d are laminated on the second intermediate layer 1c2. These layers only need to be laminated on one side of the base material 1a. However, considering the formation method of these layers, it is preferably laminated on the entire surface of the base material 1a, that is, the entire surface of the front, back and side surfaces.

In addition, in this application, the lead frame reflects the light emitted from the light-emitting element and the wavelength converting member described below. If the lead frame 1 is in a form that can exert such a reflective function, it can also be used in this form. For example, it can be placed below the light-emitting element, or it can be in the shape of a reflector surrounding the light-emitting element. In addition, as a plate-shaped lead frame, it can be used as wiring formed on an insulating base. The pattern functions as a positive and negative conductive member that is optionally electrically connected to the light-emitting element using wires or the like. Furthermore, the lead frame 1 can also serve as a mounting member for mounting the light-emitting element, a heat-radiating member for dissipating heat, and a conductive member for electrical connection with the light-emitting element.

(Ag-containing layer 1d)

The Ag-containing layer 1d is laminated in two or more layers and is provided on the surface of the lead frame 1 .

The Ag-containing layer 1d is formed of Ag alone, an alloy of Ag and one or more elements selected from the group consisting of Au, Pt, Rh, Pd, Os, Ru, Sn, In, Zn, Te, and the like. In the case of Ag alloy, the proportion of silver is preferably about 70% to 99% by weight.

The total thickness of the Ag-containing layer 1d is preferably about 0.05 μm to about 5.0 μm. It is preferable that the total thickness of the Ag-containing layer 1d is 0.05 μm or more because the light reflectance is high. In addition, if the total thickness of the Ag-containing layer 1d exceeds 5.0 μm, the usage amount of expensive silver increases, which is uneconomical, but has no disadvantages especially as a light-emitting device. The total thickness of the Ag-containing layer 1d is preferably about 0.1 μm to about 3.5 μm from the viewpoints of minimizing an increase in material cost, mounting reliability such as soldering linearity, and preventing vulcanization. In order to improve the light reflectivity, it is more preferably about 0.5 μm to about 3.5 μm. Furthermore, in order to prevent diffusion of elements and the like from the base layer, the thickness is further preferably about 0.5 μm to about 3.0 μm.

As shown in FIG. 1B , among the two or more Ag-containing layers 1d, the Ag-containing layer 1d1 is a layer that does not contain selenium or an Ag-containing layer that does not contain unavoidable impurities. The concentration of selenium element in the Ag-containing layer 1d1 is preferably about 0.01 wtppm to 30 wtppm. In addition, unavoidable impurities refer to cyanide salts and carbon in the silver plating solution used in the production, for example, when the Ag-containing layer is produced by electroplating. Carbon, nitrogen, oxygen, phosphorus, copper and other trace impurities mixed with salts such as acid salts and phosphates, copper or iron impurity salts, or compounds containing these. These impurities refer to elements that can be detected by measurement using a high-sensitivity mass spectrometer or the like from a normally electroplated Ag-containing layer. The Ag-containing layer 1d1 may be a single layer or two or more layers. It is preferable to not contain selenium because when the Ag-containing layer is produced by electroplating, a trace amount of selenium additive is added to the Ag plating solution used. It is difficult to precisely control the concentration of the Se additive and it is extremely difficult to obtain a stable coating. Ag plated appearance.

As shown in FIG. 1B , among the two or more Ag-containing layers 1 d , the uppermost Ag-containing layer 1 d 2 contains sulfur. The concentration of sulfur element in the Ag-containing layer of the uppermost layer is preferably 20 wtppm to 250 wtppm, more preferably 50 wtppm or more, and further preferably 200 wtppm or less. By setting this range, sufficient light reflectivity can be obtained and light extraction efficiency can be improved. At the same time, it can prevent the deterioration of die bond properties and wire bond properties when installing and assembling light-emitting components without reducing the purity of the film.

The sulfur in the uppermost Ag-containing layer 1d2 is produced by electroplating, and a part of the gloss agent containing the organic sulfur component in the plating solution is mixed into the Ag-containing layer. The gloss agent containing this organic sulfur component is available as a commercially available plating solution using a sulfur-containing heterocyclic compound or a thiol compound as a gloss agent, for example.

The lead frame of this embodiment preferably has a reflectivity of 70% or more, more preferably 80% or more, with respect to light having a wavelength in the visible light region. Thereby, the light extraction efficiency can be improved. In order to improve the light reflectance, as will be described later, a base material 1 a with a relatively high flatness may be used.

Furthermore, from the viewpoint of light distribution, matte to semi-gloss is preferred. Glossiness can Examples include 0.3~1.4, preferably 0.6~1.2. By setting the glossiness to this level, it is possible to prevent the light extraction efficiency from significantly decreasing and to prevent the deterioration of the light distribution caused by an increase in regular reflection of light incident on the lead frame. The glossiness shown here is a value obtained by irradiating at 45° and receiving vertical light using a micro colorimeter VSR 300A (manufactured by Nippon Denshoku Industries). The glossiness can be adjusted by changing the thickness ratio of the uppermost Ag-containing layer containing a sulfur component to the lower Ag-containing layer.

The ratio of the thickness of the uppermost Ag-containing layer 1d2 containing a sulfur component and the lower Ag-containing layer 1d1 of the two or more Ag-containing layers 1d is preferably: the uppermost Ag-containing layer 1d2:the lower Ag-containing layer 1d1=1:1 ~99, for example, 1:99~50:50. By setting the thickness of the uppermost Ag-containing layer 1d2 containing the sulfur component to 1/99 to 50/50 of the total thickness of the Ag-containing layer 1d, the light extraction efficiency can be reduced without reducing the regular reflection of the incident light. In the case of excessive increase, adjust the light distribution appropriately.

The two or more Ag-containing layers 1d may not be provided on the entire surface of the lead frame 1 . That is, it suffices that at least part of the surface of the lead frame 1 is the Ag-containing layer 1d.

For example, in the package shown in FIGS. 2A and 3A , the portion that is not exposed at the bottom of the recess of the resin molded body as the base material 3 is the portion of the lead frame 1 that is embedded inside the side wall of the resin molded body. The Ag-containing layer 1d may not be provided in part or all of the external terminals exposed to the outside of the resin molded body and the mounting parts of the components exposed on the bottom side of the resin molded body.

For example, as shown in FIG. 1 , the Ag-containing layer 1 d may be provided on both the front and back surfaces of the lead frame 1 , or may be provided only on one side and not on the other side. In addition, it may be provided on only a part of one side. In addition, the Ag-containing layer 1d may have the same thickness throughout, or may have different thicknesses. thickness. Specifically, the Ag-containing layer 1d can be disposed on the surface and back of the lead frame 1 and the thickness of one side is thicker than the other side. By providing a thicker Ag-containing layer 1d on the surface where the light-emitting element is mounted and in the vicinity of the light-emitting element, the light extraction efficiency can be improved. In this way, by making the thicknesses different, the amount of materials such as Ag can be reduced, effectively reducing material costs.

As a method of forming the Ag-containing layer 1d on a part of the lead frame 1, when forming the Ag-containing layer 1d, the portion where the Ag-containing layer 1d is not formed is protected with a mask using a resist or protective tape. Methods etc.

(base material 1a)

The lead frame 1 includes a base material 1 a on which an Ag-containing layer 1 d is laminated. The base material 1 a is used as a material that determines the general shape of the lead frame 1 .

Examples of the material of the base material 1a include metals such as Cu and Fe, alloys thereof, and cladding materials (for example, a laminated body of Cu/FeNi/Cu). In particular, in terms of mechanical properties, electrical properties, workability, etc., in addition to exothermic properties, Cu and its alloys are preferred. In addition, since the coating material can suppress the linear expansion coefficient at a low level, the reliability of the light-emitting device and the like can be improved.

The shape of the base material 1a can be appropriately selected according to the application form. For example, it can be in the shape of a plate, a block, a film, etc., and can be in the shape of a wiring pattern provided by printing or the like on ceramics or the like, or a wiring pattern in which Cu or its alloy is plated on such a pattern.

The thickness of the base material 1a can be set to a thickness that can be used as a lead frame or the like.

In order to improve the light reflectivity of the lead frame 1, the base material 1a is preferably relatively flat. For example, It is preferable that the surface roughness Ra of the base material 1a be 0.5 μm or less. This can improve the flatness of the base layer 1b, the intermediate layer 1c, and the Ag-containing layer 1d provided on the base material 1a, even if the thickness of the Ag-containing layer 1d that reflects light is set to an extremely thin 0.1 μm to 0.5 μm. The light reflectivity of the lead frame 1 can be improved. The flatness of the base material 1a can be improved by performing processes such as calendering, physical polishing, and chemical polishing.

(basal layer 1b)

As described above, the lead frame 1 may have the base layer 1 b between the base material 1 a and the Ag-containing layer 1 d.

The base layer 1b can be formed of Cu, Ni, NiCo, NiSn, NiP, etc., for example. Among them, it is preferable to use Cu or Ni which can be easily produced. As for Cu, even if the base material is a Cu alloy, it has the effect of reducing processing scratches or unevenness of the base material. In addition, it can also form a uniform Ag-containing layer without unevenness on the entire lead frame. When the base material is copper or a copper alloy, the Ni or its alloy layer is more effective as a layer that blocks diffusion into the Ag-containing layer.

The thickness of the base layer 1b is preferably, for example, about 0.05 μm to about 10 μm, and more preferably about 0.1 μm to about 5 μm. By setting the thickness within this range, the unevenness of the base material 1a can be reduced, or the diffusion of metal elements such as copper into the Ag-containing layer can be effectively reduced. In addition, raw material and manufacturing costs can be reduced.

(middle layer 1c)

The lead frame 1 may have an intermediate layer 1c between the base material 1a and the Ag-containing layer 1d, especially between the base layer 1b and the Ag-containing layer 1d. The middle layer 1c may have a single-layer structure or a laminated structure. As shown in FIG. 1 , the intermediate layer 1c preferably includes a first intermediate layer 1c1 and a second intermediate layer 1c2.

Examples of the intermediate layer 1 c include a layer containing at least one metal or metal compound selected from the group consisting of Ni, NiP, Pd, and Au.

The intermediate layer 1c, for example, the second intermediate layer 1c2 provided directly under the Ag-containing layer 1d is preferably made of a metal that has high adhesion to Ag and is less likely to react with the sulfur component than Ag. Specifically, Au and Au alloy are preferred, and Au is particularly preferred.

The intermediate layer 1c provided directly above the base layer 1b, for example, the first intermediate layer 1c1 is preferably made of Pd, Pd alloy, or the like.

When a material containing Cu is used as the base material 1a, it is preferable to provide a base layer 1b of Ni or NiP alloy on the base material 1a, and then layer the first intermediate layer 1c1 of Pd or Pd alloy and Au in this order. 2nd middle layer 1c2. By adopting this structure, Cu in the base material 1a can be suppressed from diffusing into the Ag-containing layer 1d, and the adhesion and weldability of the Ag-containing layer 1d can be improved.

The intermediate layer 1 c can be formed into a layer that has both sulfation prevention and diffusion prevention. Thus, costs can be reduced. For example, Au can be preferably used because it is difficult to react with sulfur components and has a high diffusion prevention effect.

(Manufacture of lead frame 1)

The layers such as the bottom plating layer 1b, the intermediate layer 1c, and the Ag-containing layer 1d can be formed using film-forming methods known in this field as long as the above-mentioned configuration can be achieved. However, in a lead frame with an Ag-containing layer used as a reflective member of a light-emitting device, both the part where the light-emitting element is mounted and the so-called external lead part used for joining to a mounting substrate, etc., usually have an Ag-containing layer. Therefore, the strip shape, whether the entire surface or part thereof, is preferably formed by plating in sequence.

As a plating method, any of electroplating, electroless plating, etc. can be used. in, Electroplating is preferred because it forms layers quickly and improves mass productivity. Furthermore, a method of continuously plating by a so-called roll-to-roll method is more preferred.

First, it is preferable to prepare the base material 1a and perform preprocessing on the base material 1a. Examples of pretreatment include acid treatment such as dilute sulfuric acid, dilute nitric acid, and dilute hydrochloric acid, and alkali treatment using a commercially available degreasing agent. This treatment can be performed once or multiple times, and the same or different treatments can be combined. When performing multiple pre-treatments, it is better to use pure water for running water cleaning after each treatment. When the base material 1 a is a metal plate containing Cu or an alloy containing Cu, dilute sulfuric acid is preferred, and when the metal plate contains Fe or an alloy containing Fe, dilute hydrochloric acid is preferred.

A base layer 1b is formed on the base material 1a. When the base layer 1b is formed of Ni or NiP alloy, it can be formed using a NiP alloy plating liquid.

The intermediate layer 1c can be formed using a plating solution used to obtain a target material layer.

When the Ag-containing layer 1d is formed by electroplating, the gloss can be improved by using a plating solution without a gloss agent, a gloss agent such as a Se-based gloss agent, an Sb-based gloss agent, an S-based gloss agent, and an organic-based gloss agent in combination. Spend. If a large amount of gloss agent is used, the components of the gloss agent may be mixed into the Ag-containing layer 1d, which may cause deterioration in corrosion resistance. However, by forming the base layer 1c before forming the Ag-containing layer 1d by plating, Control its film quality, thereby reducing the use of gloss agents and improving gloss. As a result, a lead frame 1 having high glossiness and excellent corrosion resistance can be obtained.

In the continuous plating method (roll-to-roll method), for example, the lead frame is passed through multiple sections of an overflowing electrolytic treatment tank of approximately 1 m in length filled with silver plating liquid. If the electrolytic treatment tank is more than If the length of 1m is 1m, due to the resistance of the leadframe material, it is impossible to energize the entire leadframe from the power supply parts located at both ends of the electrolytic treatment tank, and normal silver plating cannot be performed. Therefore, in order to ensure a silver plating thickness of about 2μm~5μm, it is necessary to Pass through the electrolytic treatment tank in multiple sections.

An example of a process step diagram of a plating device for continuous plating is shown in FIGS. 5A and 5B. The strip-shaped lead frame before plating is continuously processed by each of the processing tanks 101A, 102A, 103A, 104A, and 105A from the coil 100 of the lead frame before plating in Figure 5 to continuously generate a plating layer. There can be 2 or 3 sections of water washing tanks between each treatment tank. Finally, after drying with a hot air drying device 108, the lead frame is used as a lead frame for Ag plating. After plating, the lead frame is wound into a roll 109 to complete the Ag plating lead frame.

Before the lead frame is plated, the coil 100 is removed from oil stains and the like in an alkaline electrolytic degreasing treatment tank 101A to form a clean base material 1a. In the alkaline electrolytic degreasing treatment tank, a pump is used to supply the alkaline electrolytic degreasing liquid from the alkaline electrolytic degreasing liquid storage tank 101B. After the lead frame is processed in the overflow tank, it is returned to the alkaline electrolytic degreasing liquid storage tank 101B again. Similarly, the plating process can be performed sequentially in the acid neutralization treatment tank 102A, the bottom plating 1b treatment tank 103A, the intermediate plating 1c1 treatment tank 104A, the intermediate plating 1c2 treatment tank 105A, the Ag1d1 plating treatment tank 106A, and the Ag1d2 plating treatment tank. And the Ag plated lead frame is completed.

In a normal continuous plating apparatus, as shown in FIG. 5A , when the Ag plating liquid is supplied from one storage tank 106B to two Ag1d1 plating treatment tanks and Ag1d2 plating treatment tanks that are plural-stage electrolytic treatment tanks, the obtained result is Strictly speaking, the silver-plated film has a laminated structure. However, even if the cross-section is observed with FIB-SEM, SEM-EBSD, etc., it is difficult to observe the interface between the films plated in each plating treatment tank, and it is generally regarded as a single layer. plating.

On the other hand, a continuous plating device can also form two types of silver-plated lead frames with different gloss levels. In order to form the laminated structure of this embodiment, silver plating may be supplied from separate storage tanks.

For example, as shown in FIG. 5B , an Ag-plated lead frame is manufactured using a device capable of supplying the Ag plating liquid from the Ag1d1 plating liquid storage tank 106B and the Ag1d2 plating liquid storage tank 107B that are independent of the Ag plating treatment tanks 106A and 107A. When this device is used to produce Ag-plated lead frame products with a glossiness of 0.8 and Ag-plated lead frame products with a glossiness of 1.2 using the same continuous plating device, the gloss agent is used in the Ag plating solution supplied from a plurality of electrolytic treatment tanks. Each independent storage tank with varying concentration supplies Ag plating. Then, for example, when producing an Ag-plated lead frame with a glossiness of 0.8, after performing one stage of plating in the Ag plating treatment tank 106A to obtain Ag plating with a glossiness of 0.8, the pump is stopped in the Ag plating treatment tank 107A. The supply of the Ag plating liquid from the Ag1d2 plating liquid storage tank 107B to the Ag plating treatment tank 107A is stopped, and only one stage of plating is performed to complete the process. On the other hand, when producing a silver-plated lead frame with a glossiness of 1.2, one stage of plating is performed in the treatment tank of the Ag plating treatment tank 106A to obtain a glossiness of 0.8, and then in the Ag plating treatment tank to obtain a glossiness of 1.6. The second stage of plating is carried out in a 107A processing tank to produce an Ag-plated lead frame with a glossiness of 1.2. In this way, a laminated Ag-plated lead frame can be produced by continuously plating in an Ag plating treatment tank including two or more stages obtained from various Ag plating solutions that change the concentration of the gloss agent or the type of the gloss agent. Furthermore, the plating device of the processing steps in FIGS. 5A and 5B is only an example, and each processing tank can have a plurality of processing steps or reduce them according to the style of the lead frame to be manufactured. In addition, for the length of the treatment layer in each treatment step, the length of the treatment tank can be adjusted according to the plating pattern produced.

The results of in-depth studies in such continuous plating equipment, such as self-containing sulfur gloss The Ag coating obtained from the agent's Ag plating solution usually has a glossiness of more than 1.5 when the coating thickness is more than 1 μm, and a glossiness of more than 1.8 when the coating thickness is more than 2 μm. Although the light-emitting device using a lead frame with a high-gloss silver-plated layer has a so-called light-emitting device with a high total beam, the silver-plated layer is close to the mirror surface and becomes regular reflection, so it is necessary to use light diffusion materials for general lighting purposes. Adjust the light distribution characteristics. However, in displays such as LED display panels, if a plurality of light-emitting devices using light-diffusing materials are arranged, due to differences in the dispersion state and/or weight of the light-diffusing materials in each light-emitting device, the arrangement of the display panels The brightness and color are deviated and cannot be used as a practical display device.

On the other hand, in this embodiment, the Ag-containing layer of a laminated structure made of an Ag plating solution using sulfur as a gloss agent is used for the uppermost Ag-containing layer, that is, by using two or more layers. In the Ag-containing layer, a silver-containing layer with low gloss is disposed on the lower side and a lead frame containing an Ag-containing layer containing sulfur is disposed on the uppermost Ag-containing layer. This can provide a significantly higher luminous efficiency despite low gloss. Luminous device.

Implementation form 2: encapsulation

As shown in FIGS. 2A and 2B , the package of this embodiment includes, for example, the above-described lead frame 1 and a resin molded body as a base material 3 . The resin molding system is used to support or retain the components of the lead frame 1 . The resin molded body has a recessed portion 31 on the upper surface, and the lead frames 1 are embedded in the bottom surface of the recessed portion 31 so that the Ag-containing layers of the pair of lead frames 1 are exposed.

In the lead frame 1, the lower layer 1b is often more brittle than a normal metal layer. Therefore, if the lead frame 1 having the lower layer 1b is bent, the Ag-containing layer 1d may be damaged or the Ag-containing layer 1d may be cracked. As a result, the base material 1a of the lead frame 1 may be oxidized or vulcanized, and the light emitting device may be damaged. Decreased reliability.

However, as shown in FIGS. 2A and 2B , by forming the lead frame 1 into a substantially flat shape without a bent portion, the reliability as a light reflective material can be improved.

(Substrate 3)

The base material 3 is a member that integrally holds a pair of lead frames 1 .

The top view shape of the base material 3 may be approximately square as shown in Figure 2A. Among them, it can be made into horizontally long rectangles, other quadrilaterals, polygons, and combinations of these shapes.

As for the recessed portion 31 of the base material 3, the inner surface of the side wall can be perpendicular to the bottom surface, can be inclined as shown in Figures 2A and 2B, or can have a stepped surface. The depth of the recess 31, the shape of the opening, etc. can be appropriately adjusted according to the purpose and use. It is preferable to provide a light reflective material on the inner surface of the recess 31. In addition to exposing the lead frame 1 on the bottom surface, a light reflective material can also be provided on the inner surface of the side wall.

The base material 3 can be formed of thermosetting resin or thermoplastic resin. Among them, it is preferable to use thermosetting resin. The thermosetting resin is preferably a resin with lower gas permeability than the resin used for the sealing member described below. Specific examples include epoxy resin compositions, silicone resin compositions, and modified silicone. Modified epoxy resin compositions such as epoxy resin, modified organosilicon resin compositions such as epoxy modified organosilicon resin, polyimide resin compositions, modified polyimide resin compositions, polyaminomethane Acid ester resin, modified polyurethane resin composition, etc.

Preferably, the base material 3 further contains TiO ₂ , SiO ₂ , Al ₂ O ₃ , MgO, MgCO ₃ , CaCO ₃ , Mg(OH) ₂ , Ca(OH) ₂ and other fine particles as filling materials (fillers), so that The light transmittance is adjusted so that about 60% or more of the light from the light-emitting element is reflected, and preferably about 90% is reflected.

In addition to resin, the base 3 may also be formed of inorganic materials such as ceramics, glass, and metal. This makes it possible to manufacture a highly reliable light-emitting device with less deterioration.

Implementation form 3: encapsulation

As shown in FIGS. 4A and 4B , the package of this embodiment includes, for example, the above-described lead frame 1 and base material 3 . The base material 3 is horizontally long when viewed from above, and has a horizontally long recess 31 on its upper surface. The lead frames 1 are embedded in the bottom surface of the recess 31 so that the Ag-containing layers of the pair of lead frames 1 are exposed. The lead frame 1 protrudes partially from the outside of the base material 3 and is bent at the back side facing the upper surface and the lower side adjacent to the upper surface according to the shape of the base material 3 to form an external terminal.

Embodiment 4: Light-emitting device

As shown in FIGS. 2A and 2B , the light-emitting device 10 of this embodiment includes the above-mentioned package and a light-emitting element 2 that is rectangular in plan view. The package has a recess 31 on the upper surface of the base material 3. The Ag-containing layers of a pair of lead frames 1 are exposed on the bottom surface of the recess 31, and part of the lead frame 1 is embedded in the base material 3. The light-emitting element 2 is mounted on the exposed upper surface of the Ag-containing layer. The exposed upper surface of the Ag-containing layer reflects the light emitted from the light-emitting element 2 and the wavelength converting member described below. A sealing member 5 is sealed in the recessed portion where the light-emitting element 2 is installed. The sealing member 5 is formed of a translucent resin containing phosphor.

This kind of light-emitting device has high light reflectivity regardless of the thickness of the Ag-containing layer 1d of the lead frame 1. Therefore, a light-emitting device with higher light extraction efficiency can be produced.

That is, metal layers such as Ag-containing layers provided by plating on the base material and the base layer are usually affected by the crystal structure of the plating on the base material and the base layer. That is, there is a crystalline structure between the base material and the base layer. In the case of the structure, the metal layer disposed on it is affected by its crystal structure and undergoes so-called epitaxial growth. On the other hand, it was confirmed that the crystal structure inherited from the base material etc. adversely affects the light reflectance of the Ag-containing layer, especially the Ag-containing layer with a thickness of 1 μm or less. Therefore, by providing the base layer 1b between the base material 1a and the Ag-containing layer 1d that can reduce the influence of the crystal structure of the base material, etc., it is possible to reduce or eliminate the influence of the Ag-containing layer 1d provided by plating on the base material 1a. The influence of the crystal structure of the base material 1a. As a result, it is possible to form the Ag-containing layer 1d that is dense and has an original crystal structure of fine Ag with few defects and has a high light reflectivity. Therefore, even if the thickness of the Ag-containing layer 1d is reduced, the lead frame 1 with high light reflectivity can be obtained, and a light-emitting device with high light extraction efficiency can be constructed.

(Light-emitting element 2)

The light-emitting element 2 is disposed at a position where the light emitted from the light-emitting element 2 is reflected on the lead frame 1 . For example, as shown in FIGS. 2A and 2B , the light-emitting element 2 is disposed in a recess of the base material 3 such that the lead frame 1 is exposed on the bottom surface. That is, the light-emitting element 2 is mounted on the lead frame 1 . Therefore, the light extraction efficiency of the light emitting device 10 can be improved.

The light-emitting element 2 can be a semiconductor light-emitting element of any wavelength. For example, as the light-emitting element 2 that emits blue or green light, a light-emitting element using nitride-based semiconductors such as InGaN, GaN, and AlGaN, or GaP can be used. In addition, as red light-emitting elements, GaAlAs, AlInGaP, etc. can be used. Furthermore, the light-emitting element 2 containing other materials may also be used. The composition, luminous color, size, number, etc. of the light-emitting elements 2 used can be appropriately selected according to the purpose.

When the light-emitting device 10 is provided with a wavelength conversion member, a nitride semiconductor capable of emitting short wavelength light that can efficiently excite the wavelength conversion member is preferably used. Various emission wavelengths can be selected according to the material of the semiconductor layer and its mixed crystal ratio. Furthermore, it can be made that not only the output can A light-emitting element 2 that can see light in the light area and can also output ultraviolet or infrared rays.

The light-emitting element 2 has positive and negative electrodes. The positive and negative electrodes can be disposed on one side, or can be disposed on the upper and lower surfaces of the light-emitting element 2 . The light-emitting element 2 can be connected to the lead frame 1 using the bonding member 4 and wire 6 described later, or can be flip-chip mounted using the bonding member.

When the light-emitting element 2 is mounted on the Ag-containing layer 1d of the lead frame 1, it is preferable because the light extraction efficiency can be improved.

In order to supply electricity to the light-emitting element 2, in addition to using the bonding member 4 as a conductive component to be bonded to the electrode of the light-emitting element 2, the wire 6 can also be used. The wire 6 can also be connected to connect a plurality of light-emitting elements 2 . In addition, as shown in FIGS. 2A and 2B , each light-emitting element 2 can be connected to the lead frame 1 respectively.

(joint member 4)

The joint member 4 is a member that fixes and mounts the light-emitting element 2 to the lead frame 1 . Preferably, it is a conductive joining member 4, for example, conductive pastes of silver, gold, palladium, etc., eutectic solder materials such as Au-Sn, Sn-Ag-Cu, etc., soldering materials of low melting point metals, Cu , Ag, Au particles or films, etc. In addition, insulating materials may also be used as the joining member 4 . For example, epoxy resin compositions, silicone resin compositions, polyimide resin compositions, modified resins thereof, mixed resins, etc. can be used. When using these resins, taking into consideration the deterioration caused by light and heat from the light-emitting element 2, it is preferable to provide a metal layer with a high reflectivity such as an Al film or an Ag film on the mounting surface of the light-emitting element 2. Dielectric reflective film, etc.

(Sealing member 5)

The light emitting device 10 may be provided with the sealing member 5 . By providing the sealing member 5 to cover the light-emitting element 2, the lead frame 1, the wire 6, etc., the covered components can be protected from dust, moisture, external force, etc., thereby improving the reliability of the light-emitting device.

The sealing member 5 preferably has light transmittance that can transmit light from the light-emitting element 2 and light resistance that is not easily deteriorated by the light transmittance. Specific materials include insulating materials having translucency capable of transmitting light from light-emitting elements, such as organic silicone resin compositions, modified organic silicone resin compositions, modified epoxy resin compositions, and fluororesin compositions. Resin composition. Among them, a mixed resin containing at least one type of resin having a siloxane skeleton such as dimethyl silicone, phenyl silicone with a small phenyl content, and fluorine-based silicone resin is preferred.

When the sealing member 5 is made of resin, the dripping (drip) method, compression molding method, printing method, transfer molding method, jet dispensing method, spray coating method, etc. can be used as the forming method of the sealing member 5 . In the case of the base 3 having the concave portion 31 as shown in Figures 2A and 2B, the drip irrigation method is preferred, and in the case of using the flat base 3, the compression molding method or the transfer molding method is preferred.

As shown in FIGS. 2A and 2B , the sealing member 5 can be provided so as to fill the recess 31 of the base material 3 .

The shape of the outer surface of the sealing member 5 can be selected in various ways according to the light distribution characteristics required of the light-emitting device 10 and the like. For example, by making the upper surface a convex lens shape, a concave lens shape, a Fresnel lens shape, a rough surface, etc., the directional characteristics and light extraction efficiency of the light-emitting device can be adjusted.

The sealing member 5 may also contain additives such as a wavelength converting member, a colorant, a light diffusing agent, a light reflecting material, and various fillers. From the viewpoint of light absorption, etc., it is preferable that it does not contain additives other than the wavelength converting member.

The wavelength conversion member is a material that converts the wavelength of the light from the light-emitting element 2 . When the light emitted from the light-emitting element 2 is blue light, it is preferable to use an yttrium-aluminum-garnet-based phosphor (hereinafter referred to as "YAG"), which is one of the aluminum oxide-based phosphors, as the wavelength conversion member. :Ce"). The YAG: Ce phosphor partially absorbs the blue light from the light-emitting element and emits the yellow light that is a complementary color. Therefore, it is relatively simple to form a high-output light-emitting device 100 that emits white mixed-color light.

Examples of the coloring agent include carbon black and the like.

Examples of light diffusing agents include silicon dioxide, titanium dioxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, zinc oxide, barium titanate, aluminum oxide, iron oxide, and chromium oxide. , manganese oxide, glass, etc.

Examples of light reflective materials include titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, mullite, niobium oxide, barium sulfate, and various rare earth oxides (for example, Yttrium oxide, yttrium oxide), etc.

Examples of fillers include fibrous fillers such as glass fiber and wollastonite, and inorganic fillers such as carbon.

(Line 6)

The wire 6 is a member that connects the light-emitting element 2 and the lead frame 1 and the like. The material for line 6 is preferably Au, Al, Cu and other metals and their alloys. In addition, it is possible to use a wire in which a coating layer is provided on the surface of the core with a material different from the core. For example, a wire in which Pd or PdAu alloy is provided as a coating layer on the surface of the Cu core can be used. Among them, any one selected from Au, Ag, and Ag alloys with high reliability is preferred. Among them, it is preferable to use Ag or Ag alloy with high light reflectivity. At this time, the wire 6 is preferably covered with a protective film. This prevents vulcanization and disconnection of wires containing Ag, thereby improving the reliability of the light-emitting device.

When the base material 1a of the lead frame 1 is Cu and the wire 6 is Ag or an Ag alloy, the formation of local cells between Cu and Ag can be suppressed by providing the base layer 1b or the intermediate layer 1c therebetween. Therefore, the risk of deterioration of the lead frame 1 or the wire 6 can be reduced, and a highly reliable light-emitting device can be produced.

(protective film)

The light-emitting device can also be provided with a protective film. The protective film is a member that covers at least the Ag-containing layer 1d provided on the surface of the lead frame 1 and mainly inhibits discoloration or corrosion of the Ag-containing layer 1d on the surface of the lead frame 1. Furthermore, the surfaces of members other than the lead frame 1 such as the light-emitting element 2, the bonding member 4, the wire 6, the base material 3 (resin molded body), and the surface of the lead frame 1 on which the Ag-containing layer 1d is not provided can be arbitrarily covered.

The protective film is preferably formed by atomic layer deposition (also called ALD). According to the ALD method, a very uniform protective film can be formed, and the formed protective film is denser than that obtained by other film forming methods, so it can extremely effectively prevent the sulfurization of the Ag-containing layer 1d.

Materials for the protective film include: Al ₂ O ₃ , SiO ₂ , TiO ₂ , ZrO ₂ , ZnO, Nb ₂ O ₅ , MgO, In ₂ O ₃ , Ta ₂ O ₅ , HfO ₂ , SeO, Y ₂ O3 , SnO ₂ and other oxides, AlN, TiN, ZrN and other nitrides, ZnF ₂ and SrF ₂ and other fluorides. These can be used individually or in combination. The protective film may have either a single layer or a laminated structure.

The light emitting device 10 may further include various components. For example, a Zener diode may be installed as a protection element.

Embodiment 5: Manufacturing method of light-emitting device

The light-emitting device 10 is in the shape of a flat plate without a bend in the lead frame 1 .

This kind of light-emitting device 10 can be manufactured by the following manufacturing method.

First, as shown in FIG. 3A , a Cu metal plate as the base material 1 a is punched to form a plurality of pairs of leads.

Then, through wet etching, steps are formed at specific positions on the metal plate. After forming the step difference, a base layer 1b, an intermediate layer 1c, and Ag-containing layers 1d1 and 1d2 are sequentially formed on the surface of the base material 1a using a plating method to form the lead frame 1.

As shown in FIG. 3B , a resin molded body serving as a base material 3 is formed on the lead frame 1 obtained in this way by a transfer molding method. As shown in FIG. 3B , the resin molded body is formed such that a pair of leads are respectively exposed on the bottom surface of the recess 31 .

Next, as shown in FIG. 3C , the light-emitting element 2 is placed on the element placement area of the lead frame 1 on which the base material 3 is formed via the bonding member. The light-emitting element 2 and the lead frame 1 are connected using wires. Thereafter, the sealing member 5 is formed in each recess 31 .

As shown in FIG. 3D , the lead frame 1 and the base material 3 are cut using a microtome or the like, and are individually divided into individual light-emitting devices 10 as shown in FIGS. 2A and 2B . By this cutting, the cross section of the lead frame 1 is exposed on the outer side of the light emitting device 10 . In this cross section, the base material 1a, the amorphous layer 1b, the base layer 1c, and the Ag-containing layer 1d are exposed.

By this manufacturing method, the light-emitting device 10 having the flat lead frame 1 without a bend can be manufactured.

Embodiment 6: Light-emitting device

As shown in FIGS. 4A and 4B , the light-emitting device 20 of this embodiment includes a light-emitting element 2 that is rectangular in plan view; a pair of plate-shaped lead frames with an Ag layer on the surface; and a lead frame 1 embedded therein. A part of the resin molded body serves as the base material 3.

The resin molded body has a horizontally long shape when viewed from above, and has a horizontally long recessed portion 31 on its upper surface. The lead frames 1 are filled in the bottom surface of the recess 31 in such a way that the Ag-containing layers of the pair of lead frames 1 are exposed. The lead frame 1 protrudes partially from the outside of the base material 3 and is bent at the back side facing the upper surface and the lower side adjacent to the upper surface according to the shape of the base material 3 to form an external terminal.

Then, the sealing member 5 is filled into the recessed portion 31 of the resin molded body so as to cover these members.

Hereinafter, embodiments of a pair of lead frames and a light-emitting device using the lead frames will be described in detail.

Example 1

On the surface of the Cu base material, a base layer with a thickness of 0.8 μm is sequentially formed by electroplating. A Cu layer, a matte Ag-containing layer (thickness: 0.1 μm) obtained from a gloss-free Ag plating solution as a lower Ag-containing layer, and an uppermost Ag-containing layer composed of Prepare an Ag-containing layer (thickness: 3.0 μm) obtained from the Ag plating solution using sulfur gloss agent, and prepare a pair of lead frames.

Examples 2~4

Each layer shown in Table 1 was formed by electroplating in the same manner as in Example 1, and a pair of lead frames was prepared.

Comparative examples 1~4

In the same manner as Example 1, each layer shown in Table 1 was formed by electroplating without forming the lower Ag-containing layer, and a pair of lead frames was prepared.

The Ag-containing layer in the Example was formed in the following manner.

Use commercially available alkaline electrolytic degreasing solution to degrease the copper lead frame, and then use 10% sulfuric acid water for acid neutralization. Then, copper plating with a thickness of 0.8 μm was performed using a copper plating solution with the following composition at a liquid temperature of 60°C and a current density of 4A/ ^dm2 .

Copper plating liquid composition:

Potassium copper cyanide=200g/L

Potassium cyanide=25g/L

Potassium carbonate=15g/L

Thereafter, a shock silver plating liquid with the following composition was used to form a shock silver plating film under the conditions of a liquid temperature of 25°C, a current density of 1.5 A/dm ² , and a plating time of 15 seconds.

Impact silver plating liquid composition:

Potassium silver cyanide=1g/L

Potassium cyanide=120g/L

Potassium carbonate=15g/L

Then, in Example 1, the silver plating solution with the following composition was used to perform silver plating on the lower layer with a thickness of 2.5 μm at a liquid temperature of 50° C. and a current density of 4 A/dm ² .

Potassium silver cyanide=70g/L

Potassium cyanide=120g/L

Potassium carbonate=15g/L

Then, silver plating was performed on the uppermost layer using a silver plating solution with the following composition at a liquid temperature of 25°C and a current density of 4A/ ^dm2 .

Potassium silver cyanide=70g/L

Potassium cyanide=120g/L

Potassium carbonate=15g/L

Commercially available sulfur gloss agent=20ml/L

In Examples 2 to 3, only the plating thickness was changed.

Potassium silver cyanide=70g/L

Potassium cyanide=120g/L

Potassium carbonate=15g/L

Potassium cyanoselenate=0.05mg/L

Then, silver plating was performed with a silver plating solution of the following composition at a liquid temperature of 25°C and a current density of 4A/ ^dm2 .

Potassium silver cyanide=70g/L

Potassium cyanide=120g/L

Potassium carbonate=15g/L

Organic sulfur gloss agent=20ml/L

In Comparative Examples 1 to 4, after forming the impact silver plating film of Example 1, the silver plating liquid with the following composition was used to plating the uppermost layer of silver plating with a thickness of 2.5 μm at a liquid temperature of 25°C and a current density of 4 A/ ^dm2 . .

Potassium silver cyanide=70g/L

Potassium cyanide=120g/L

Potassium carbonate=15g/L

The potassium cyanoselenide concentration is adjusted to obtain each gloss level.

Using the lead frames obtained in Examples 1 to 4 and Comparative Examples 1 to 4, light-emitting devices having substantially the same structure as the light-emitting device 20 shown in FIGS. 4A and 4B were manufactured respectively. Furthermore, in each of the Examples and Comparative Examples, RGB light-emitting elements were mounted as light-emitting elements. In addition, a white light-emitting device equipped with a blue light-emitting element coated with YAG fluorescent agent was manufactured. The blue radiation beam, the green radiation beam, and the red radiation beam were respectively measured on the light-emitting device manufactured in this way. In addition, the total light beam was measured for the white light-emitting device.

The results are shown in Figures 6 to 9 respectively.

It can be seen from Figures 6 to 9 that even if the glossiness is low, the light-emitting devices of Examples 1 to 4 all show higher radiation beams regardless of the thickness of the Ag-containing layer. Moreover, the white light-emitting device shows a higher total light beam. On the other hand, in the light-emitting device of the comparative example, it was confirmed that only a lower radiation beam or a lower total beam could be obtained compared with the embodiment with the same silver-plated glossiness.

It can be seen from this that the above-mentioned embodiments are all light-emitting devices that maintain high light distribution and obtain high light extraction efficiency.

1‧‧‧Light reflective material

1a‧‧‧base material

1b‧‧‧Bottom plating layer

1c‧‧‧Intermediate plating layer

1c1‧‧‧1st intermediate plating layer

1c2‧‧‧The second intermediate plating layer

1d‧‧‧Ag-containing layer

Claims (15)

A lead frame, characterized in that it contains: a base material containing metal, and two or more Ag-containing layers laminated on the base material; among the two or more Ag-containing layers, the uppermost Ag-containing layer contains Sulfur, the lower Ag-containing layer is a layer that does not contain other than unavoidable impurities. The glossiness of the above two or more Ag-containing layers is 0.3~1.4. For example, the lead frame of claim 1, wherein the sulfur content of the Ag-containing layer of the uppermost layer is 20 ppm to 250 ppm by weight. Such as the lead frame of claim 1 or 2, wherein the total thickness of the above two or more Ag-containing layers is 0.05~5 μm, and the ratio of the thickness of the above-mentioned uppermost Ag-containing layer to the above-mentioned lower Ag-containing layer is 1:1 ~99. The lead frame of claim 1 or 2, wherein there is a base layer between the Ag-containing layer and the base material. The lead frame of claim 4, wherein the base layer includes a layer of at least one metal selected from the group consisting of Cu, Ni, Pd and Au. The lead frame of claim 1 or 2, wherein the lead frame is flat and does not have a bend. For example, the lead frame of claim 1 or 2, wherein the Ag-containing layer contains 70% to 99% by weight of Ag. A package having a base material in which the Ag-containing layer of the uppermost layer of the lead frame according to any one of claims 1 to 7 is embedded and exposed. A light-emitting device provided with the package of claim 8 and a light-emitting element, which is mounted on the uppermost Ag-containing layer exposed in the package. The light-emitting device of claim 9 further has a line connecting the above-mentioned light-emitting element and the above-mentioned uppermost Ag-containing layer, and the line includes Au, Ag, Ag alloy, copper, copper core wire coated with palladium, or copper core wire coated with palladium silver. Any 1 type of copper core wire. A method for manufacturing a light-emitting device, which includes the following steps: preparing a base material, forming a base metal on the base material by plating, forming an Ag-containing layer including two or more laminated layers on the base metal by plating, and preparing Lead frame, the lower layer of the two or more layers does not contain other than unavoidable impurities, the uppermost layer of the two or more layers contains sulfur, and the glossiness of the Ag-containing layer of the two or more layers is 0.3~1.4, A package with the lead frame is prepared, and the light-emitting element is mounted on the package. The method for manufacturing a light-emitting device according to claim 11, wherein the Ag-containing layer is formed by electroplating. The method for manufacturing a light-emitting device according to claim 11, wherein the base material is formed by rolling. The manufacturing method of the light-emitting device of claim 11, wherein the thickness ratio of the Ag-containing layer of the uppermost layer to the Ag-containing layer of the lower layer is 1:99~50:50. The method for manufacturing a light-emitting device according to any one of claims 11 to 14, wherein the Ag-containing layer contains 70% to 99% by weight of Ag.