TWI825425B - Method of correcting a lithographic process - Google Patents
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
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Abstract
Description
本揭示內容涉及校正微影製程的方法。具體來說,本揭示內容涉及在相同晶圓中不同曝光場之間的校正。The present disclosure relates to methods of calibrating lithography processes. Specifically, this disclosure relates to correction between different exposure fields in the same wafer.
微影製程包含若干且繁複的物理性以及化學性處理,過程中晶圓與光罩的對準、光阻劑的選擇、曝光條件等均可能造成圖案的誤差。因此,在習知的製程中,會在不同批次晶圓或是不同晶圓轉換之際,執行補償(例如校正晶圓位置的偏移),校正成品誤差。The lithography process involves a number of complex physical and chemical treatments. During the process, the alignment of the wafer and the photomask, the selection of photoresist, and exposure conditions may cause pattern errors. Therefore, in the conventional manufacturing process, compensation (for example, correcting the offset of the wafer position) is performed between different batches of wafers or when different wafers are converted to correct finished product errors.
然而,即使在同一晶圓上,不同位置待形成的圖案便可能不同,並且若將每次曝光時,晶圓照射到光線的曝光區域,定義為一個曝光區(shot area),則晶圓包含複數曝光區,須經過多次曝光以及位移,才能完成單個晶圓的曝光。在習知的製程中,同一晶圓上所有曝光區都套用相同的補償值進行曝光。However, even on the same wafer, the patterns to be formed at different locations may be different, and if the exposure area of the wafer exposed to light during each exposure is defined as an exposure area (shot area), then the wafer contains multiple The exposure area must undergo multiple exposures and displacements to complete the exposure of a single wafer. In a conventional manufacturing process, all exposure areas on the same wafer are exposed using the same compensation value.
隨著半導體元件的要求日趨精密以及複雜化,如何降低晶圓圖案的誤差,提供可降低晶圓圖案誤差的方法,是亟欲解決的問題。As the requirements for semiconductor components become increasingly sophisticated and complex, how to reduce wafer pattern errors and provide methods that can reduce wafer pattern errors are urgent issues to be solved.
本揭示內容中的一些實施方式提供一種校正微影製程的方法,包含以下步驟:提供第一晶圓,第一晶圓具有複數曝光區,此些曝光區包含第一曝光區以及第二曝光區,其中第一曝光區與第二曝光區可重合、部分重合或完全未重合;提供複數光罩,此些光罩包含第一光罩以及第二光罩,第一光罩包含第一光罩圖案以及位於第一光罩圖案周邊的第一光罩對準記號,第二光罩包含第二光罩圖案以及位於第二光罩圖案周邊的第二光罩對準記號;以第一補償量執行第一曝光前補償;使用第一光罩,在第一曝光區上執行第一曝光處理,以形成對應於第一光罩圖案的第一圖案,其中第一圖案具有對應於第一光罩對準記號的第一對準記號;以第二補償量執行第二曝光前補償;以及使用第二光罩,在第二曝光區上執行第二曝光處理,以形成對應於第二光罩圖案的第二圖案,其中第二圖案具有對應於第二光罩對準記號的第二對準記號。Some embodiments of the present disclosure provide a method for calibrating a lithography process, including the following steps: providing a first wafer, the first wafer having a plurality of exposure areas, and the exposure areas include a first exposure area and a second exposure area. , wherein the first exposure area and the second exposure area may overlap, partially overlap, or not overlap at all; provide a plurality of photomasks, these photomasks include a first photomask and a second photomask, and the first photomask includes a first photomask pattern and a first mask alignment mark located around the first mask pattern, the second mask including a second mask pattern and a second mask alignment mark located around the second mask pattern; with the first compensation amount Performing a first pre-exposure compensation; using the first mask, performing a first exposure process on the first exposure area to form a first pattern corresponding to the first mask pattern, wherein the first pattern has a pattern corresponding to the first mask pattern a first alignment mark of the alignment mark; performing a second pre-exposure compensation with a second compensation amount; and using a second mask, performing a second exposure process on the second exposure area to form a pattern corresponding to the second mask A second pattern, wherein the second pattern has second alignment marks corresponding to the second reticle alignment marks.
在一些實施方法中,第一曝光前補償包括調整第一曝光區與第一光罩的相對位置、第一曝光處理中的曝光參數或其組合,以及第二曝光前補償包括調整第二曝光區與第二光罩的相對位置、第二曝光處理中的曝光參數或其組合。In some implementation methods, the first pre-exposure compensation includes adjusting the relative position of the first exposure area and the first mask, the exposure parameters in the first exposure process, or a combination thereof, and the second pre-exposure compensation includes adjusting the second exposure area. The relative position to the second mask, the exposure parameters in the second exposure process, or a combination thereof.
在一些實施方法中,在執行第一曝光前補償的步驟之前,此方法更包含:以第一光罩執行第一曝光初測試,在第一晶圓上獲得第一光罩的實際第一曝光位置;以及比對第一光罩的實際第一曝光位置與理論第一曝光位置,以獲得第一光罩曝光位置誤差量,其中,以第一補償量執行第一曝光前補償的步驟中,第一補償量包含基於第一光罩曝光位置誤差量所計算而得。In some implementation methods, before performing the first pre-exposure compensation step, the method further includes: performing a first exposure preliminary test with the first mask, and obtaining the actual first exposure of the first mask on the first wafer. position; and compare the actual first exposure position of the first mask with the theoretical first exposure position to obtain the first mask exposure position error amount, wherein in the step of performing the first pre-exposure compensation with the first compensation amount, The first compensation amount includes calculation based on the first mask exposure position error amount.
在一些實施方法中,第一光罩曝光位置誤差量,是藉由比對位於實際第一曝光位置中的第一光罩對準記號,以及位於理論第一曝光位置中的第一光罩對準記號的曝光位置差異而得。In some implementation methods, the first mask exposure position error is determined by comparing the first mask alignment mark located in the actual first exposure position with the first mask alignment mark located in the theoretical first exposure position. Derived from differences in the exposure positions of the marks.
在一些實施方法中,第一光罩曝光位置誤差量,是藉由比對位於實際第一曝光位置中的第一光罩投影輪廓,以及位於理論第一曝光位置中的第一光罩投影輪廓的曝光位置差異而得。In some implementation methods, the first mask exposure position error is determined by comparing the first mask projection profile located in the actual first exposure position with the first mask projection profile located in the theoretical first exposure position. Derived from differences in exposure position.
在一些實施方法中,在執行第一曝光前補償的步驟之前,此方法更包含:以第一光罩執行第一曝光初測試;以第一光罩執行第一顯影初測試,在第一晶圓上獲得由第一光罩所轉移的實際第一圖案;以及比對實際第一圖案與理論第一圖案的圖案外觀形變或圖案偏移,以獲得第一顯影誤差量,其中,以第一補償量執行第一曝光前補償的步驟中,第一補償量包含基於第一顯影誤差量所計算而得。In some implementation methods, before performing the first pre-exposure compensation step, the method further includes: performing a first initial exposure test using the first photomask; performing a first preliminary development test using the first photomask. Obtain the actual first pattern transferred by the first photomask on the circle; and compare the pattern appearance deformation or pattern deviation of the actual first pattern and the theoretical first pattern to obtain the first development error amount, wherein, with the first In the step of performing the first pre-exposure compensation, the first compensation amount is calculated based on the first development error amount.
在一些實施方法中,在執行第一曝光前補償的步驟之前,此方法更包含:以第一光罩執行第一顯影初測試,在第一晶圓上獲得由第一光罩所轉移的實際第一圖案;以及比對實際第一圖案與理論第一圖案的圖案外觀形變或圖案偏移,以獲得第一顯影誤差量,其中,以第一補償量執行第一曝光前補償的步驟中,第一補償量包含基於第一顯影誤差量所計算而得。In some implementation methods, before performing the first pre-exposure compensation step, the method further includes: performing a first preliminary development test with the first photomask, and obtaining the actual image transferred by the first photomask on the first wafer. the first pattern; and comparing the pattern appearance deformation or pattern shift of the actual first pattern and the theoretical first pattern to obtain the first development error amount, wherein in the step of performing the first pre-exposure compensation with the first compensation amount, The first compensation amount includes calculation based on the first development error amount.
在一些實施方法中,在執行第二曝光前補償的步驟之前,此方法更包含:以第二光罩執行第二曝光初測試,在第一晶圓上獲得第二光罩的實際第二曝光位置;以及比對第二光罩的實際第二曝光位置與理論第二曝光位置,以獲得第二光罩曝光位置誤差量,其中,以第二補償量執行第二曝光前補償的步驟中,第二補償量包含基於第二光罩曝光位置誤差量所計算而得。In some implementation methods, before performing the second pre-exposure compensation step, the method further includes: performing a second exposure preliminary test with the second mask, and obtaining the actual second exposure of the second mask on the first wafer. position; and comparing the actual second exposure position of the second mask with the theoretical second exposure position to obtain the second mask exposure position error amount, wherein in the step of performing second pre-exposure compensation with the second compensation amount, The second compensation amount includes calculation based on the second mask exposure position error amount.
在一些實施方法中,第二光罩曝光位置誤差量,是藉由比對分別位於實際第二曝光位置中的第二光罩對準記號,以及位於理論第二曝光位置中的第二光罩對準記號的曝光位置差異而得。In some implementation methods, the second mask exposure position error is determined by comparing the second mask alignment marks located in the actual second exposure position and the second mask pair located in the theoretical second exposure position. It is derived from the difference in the exposure position of the accurate mark.
在一些實施方法中,第二光罩曝光位置誤差量,是藉由比對位於實際第二曝光位置中的第二光罩投影輪廓,以及位於理論第二曝光位置中的第二光罩投影輪廓的曝光位置差異而得。In some implementation methods, the second mask exposure position error is determined by comparing the second mask projection profile located in the actual second exposure position with the second mask projection profile located in the theoretical second exposure position. Derived from differences in exposure position.
在一些實施方法中,在執行第二曝光前補償的步驟之前,此方法更包含:以第二光罩執行第二曝光初測試;以第二光罩執行第二顯影初測試,在第一晶圓上獲得由第二光罩所轉移的實際第二圖案;以及比對實際第二圖案與理論第二圖案的圖案外觀形變或圖案偏移,以獲得第二顯影誤差量,其中,以第二補償量執行第二曝光前補償的步驟中,第二補償量更包含基於第二顯影誤差量所計算而得。In some implementation methods, before performing the second pre-exposure compensation step, the method further includes: performing a second initial exposure test using a second photomask; performing a second preliminary development test using the second photomask, and after the first crystal Obtain the actual second pattern transferred by the second photomask on the circle; and compare the pattern appearance deformation or pattern deviation of the actual second pattern and the theoretical second pattern to obtain the second development error amount, wherein, with the second In the step of performing the second pre-exposure compensation by the compensation amount, the second compensation amount further includes a calculation based on the second development error amount.
在一些實施方法中,在執行第二曝光前補償的步驟之前,此方法更包含:以第二光罩執行第二顯影初測試,在第一晶圓上獲得由第二光罩所轉移的實際第二圖案;以及比對實際第二圖案與理論第二圖案的圖案外觀形變或圖案偏移,以獲得第二顯影誤差量,其中,以第二補償量執行第二曝光前補償的步驟中,第二補償量包含基於第二顯影誤差量所計算而得。In some implementation methods, before performing the second pre-exposure compensation step, the method further includes: performing a second preliminary development test with the second photomask, and obtaining the actual image transferred by the second photomask on the first wafer. the second pattern; and comparing the pattern appearance deformation or pattern deviation of the actual second pattern and the theoretical second pattern to obtain the second development error amount, wherein in the step of performing the second pre-exposure compensation with the second compensation amount, The second compensation amount includes calculation based on the second development error amount.
在一些實施方法中,第一曝光前補償以及第二曝光前補償所欲校正的誤差現象包括:平移、旋轉、正交、放大、縮小、或前述組合。In some implementation methods, the error phenomena to be corrected by the first pre-exposure compensation and the second pre-exposure compensation include: translation, rotation, orthogonal, enlargement, reduction, or a combination of the foregoing.
在一些實施方法中,執行第一曝光處理、第二曝光處理或前述兩者之後,此方法更包含對於第一晶圓執行化學性處理或物理性處理。In some implementation methods, after performing the first exposure process, the second exposure process, or both, the method further includes performing chemical treatment or physical treatment on the first wafer.
在一些實施方法中,在使用第二光罩,在第二曝光區上執行第二曝光處理的步驟之後,更包含:提供與第一晶圓相同的第二晶圓;以第二晶圓的第一補償量執行第二晶圓的第一曝光前補償,其中第二晶圓的第一補償量是基於對第二晶圓執行第二晶圓的第一曝光初測試、第二晶圓的第一顯影初測試或其組合而得;以第二晶圓的第二補償量執行第二晶圓的第二曝光前補償,其中第二晶圓的第二補償量是基於對第二晶圓執行第二晶圓的第二曝光初測試、第二晶圓的第二顯影初測試或其組合而得;提供與第一晶圓相同的第三晶圓;以第三晶圓的第一補償量執行第三晶圓的第一曝光前補償,其中第三晶圓的第一補償量是由第一晶圓的第一補償量以及第二晶圓的第一補償量平均而得;以及以第三晶圓的第二補償量執行第三晶圓的第二曝光前補償,其中第三晶圓的第二補償量是由第一晶圓的第二補償量以及第二晶圓的第二補償量平均而得。In some implementation methods, after using the second photomask to perform the second exposure process on the second exposure area, it further includes: providing a second wafer that is the same as the first wafer; The first compensation amount performs a first pre-exposure compensation of the second wafer, wherein the first compensation amount of the second wafer is based on performing a first exposure preliminary test of the second wafer on the second wafer, Obtained from the first initial development test or a combination thereof; performing the second pre-exposure compensation of the second wafer with the second compensation amount of the second wafer, wherein the second compensation amount of the second wafer is based on the second wafer Obtained by performing a second initial exposure test of the second wafer, a second initial development test of the second wafer, or a combination thereof; providing a third wafer that is the same as the first wafer; using the first compensation of the third wafer performing the first pre-exposure compensation of the third wafer, wherein the first compensation amount of the third wafer is obtained by averaging the first compensation amount of the first wafer and the first compensation amount of the second wafer; and The second compensation amount of the third wafer performs the second pre-exposure compensation of the third wafer, wherein the second compensation amount of the third wafer is determined by the second compensation amount of the first wafer and the second compensation amount of the second wafer. The amount of compensation is averaged.
在一些實施方法中,第一晶圓、第二晶圓、以及第三晶圓為相同批次的晶圓。In some implementations, the first wafer, the second wafer, and the third wafer are from the same batch of wafers.
在一些實施方法中,第一晶圓、第二晶圓、以及第三晶圓為不同批次的晶圓。In some implementations, the first wafer, the second wafer, and the third wafer are from different batches of wafers.
應當理解,前述的一般性描述和下文的詳細描述都是示例,並且旨在提供對所要求保護的本揭示內容的進一步解釋。It is to be understood that both the foregoing general description and the following detailed description are examples and are intended to provide further explanation of the present disclosure as claimed.
可以理解的是,下述內容提供的不同實施方式或實施例可實施本揭露之標的不同特徵。特定構件與排列的實施例係用以簡化本揭露而非侷限本揭露。當然,這些僅是實施例,並且不旨在限制。舉例來說,以下所述之第一特徵形成於第二特徵上的敘述包含兩者直接接觸,或兩者之間隔有其他額外特徵而非直接接觸。此外,本揭露在複數個實施例中可重複參考數字及/或符號。這樣的重複是為了簡化和清楚,而並不代表所討論的各實施例及/或配置之間的關係。It will be appreciated that the following description provides different implementations or examples for implementing different features of the subject matter of the present disclosure. The specific examples of components and arrangements are provided to simplify the disclosure but not to limit the disclosure. Of course, these are merely examples and are not intended to be limiting. For example, the following statement that a first feature is formed on a second feature includes direct contact between the two, or other additional features between the two rather than direct contact. Furthermore, reference numerals and/or symbols may be repeated in multiple embodiments of the present disclosure. Such repetition is for simplicity and clarity and does not necessarily represent a relationship between the various embodiments and/or configurations discussed.
本說明書中所用之術語一般在本領域以及所使用之上下文中具有通常性的意義。本說明書中所使用的實施例,包括本文中所討論的任何術語的例子僅是說明性的,而不限制本揭示內容或任何示例性術語的範圍和意義。同樣地,本揭示內容不限於本說明書中所提供的一些實施方式。The terms used in this specification generally have their ordinary meanings in the art and the context in which they are used. The embodiments used in this specification, including examples of any terms discussed herein, are illustrative only and do not limit the scope and meaning of the disclosure or any illustrative terms. Likewise, this disclosure is not limited to some of the implementations provided in this specification.
將理解的是,儘管本文可以使用術語第一、第二等來描述各種元件,但是這些元件不應受到這些術語的限制。這些術語用於區分一個元件和另一個元件。舉例來說,在不脫離本實施方式的範圍的情況下,第一元件可以被稱為第二元件,並且類似地,第二元件可以被稱為第一元件。It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. For example, a first element could be termed a second element, and similarly, a second element could be termed a first element, without departing from the scope of the present embodiment.
於本文中,術語“和/或”包含一個或複數個相關聯的所列項目的任何和所有組合。As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
於本文中,術語「包含」、「包括」、「具有」等應理解為開放式,即,意指包括但不限於。As used herein, the terms "includes," "includes," "has," etc. are to be understood as open-ended, i.e., meaning including but not limited to.
習知微影製程,晶圓經過多重處理(例如晶圓曝光、圖案化、蝕刻、其他物理性(例如高溫熱製程)或是化學性處理(例如氧化製程))與光罩以及晶圓轉移的步驟,方製成晶圓成品,其中曝光誤差、顯影誤差等各處理中的誤差因素,常造成晶圓圖案的誤差現象(例如平移、旋轉、正交(即當層與前層的直交度誤差)、放大、縮小等現象),降低製程良率。In the conventional lithography process, the wafer undergoes multiple processes (such as wafer exposure, patterning, etching, other physical (such as high-temperature thermal processes) or chemical treatments (such as oxidation processes)), photomasks, and wafer transfer. steps to produce a finished wafer. Error factors in each process such as exposure error and development error often cause error phenomena in the wafer pattern (such as translation, rotation, orthogonality (that is, when the orthogonality between the layer and the previous layer) Error), amplification, reduction and other phenomena), reducing the process yield.
本揭示內容的一些實施方式提供可以降低晶圓成品誤差,提升製程良率的校正微影製程的方法。請見第1圖。Some embodiments of the present disclosure provide methods for calibrating the lithography process that can reduce wafer finished product errors and improve process yield. See picture 1.
第1圖示例性地描述根據本揭示內容的一些實施方式中的校正微影製程的方法100,包含操作S110至操作S160,分別為:操作S110,提供晶圓,包含第一曝光區以及第二曝光區;操作S120,提供複數光罩;操作S130,以第一補償量執行第一曝光前補償;操作S140,在第一曝光區上執行第一曝光處理;操作S150,以第二補償量執行第二曝光前補償;以及操作S160,在第二曝光區上執行第二曝光處理。Figure 1 schematically depicts a
一般而言,一片晶圓通常會根據曝光時光線照射區域,分為複數曝光區,經由多次曝光後,才能完成整片晶圓的曝光。通常在晶圓中,不同曝光區依對位等誤差因素,可能具有不同補償值。然而,習知的曝光方法中,是在不同批次晶圓或是晶圓之間轉換時才執行補償,因此,晶圓上所有曝光區都套用相同的補償值。Generally speaking, a wafer is usually divided into multiple exposure areas according to the area illuminated by light during exposure. After multiple exposures, the entire wafer can be exposed. Usually in a wafer, different exposure areas may have different compensation values depending on error factors such as alignment. However, in the conventional exposure method, compensation is performed when switching between different batches of wafers or wafers. Therefore, the same compensation value is applied to all exposed areas on the wafer.
有別於習知在批次晶圓或是晶圓之間執行的曝光前補償,本揭示內容的一些實施方式將執行補償校正的頻率單位縮小至單一晶圓內的不同次曝光中,即,在同一晶圓中的各次曝光前,即執行曝光前補償,增加校正誤差的頻率,降低晶圓圖案的誤差。Different from the conventional pre-exposure compensation that is performed on batches of wafers or between wafers, some embodiments of the present disclosure reduce the frequency unit of performing compensation correction to different exposures within a single wafer, that is, Before each exposure in the same wafer, pre-exposure compensation is performed to increase the frequency of error correction and reduce the error of the wafer pattern.
請繼續見第1圖。首先,執行操作S110,提供晶圓。晶圓具有分別對應於複數光罩投影的複數曝光區,各個曝光區之間可重合、部分重合或完全未重合。在一些實施方式中,晶圓上具有全區對準記號,可用於光罩與晶圓之間的對準。在一實施方式中,全區對準記號可為晶圓上的一至複數條狀結構(例如凹槽或突塊)、矩形結構、任意其他形狀或其組合。Please continue to picture 1. First, operation S110 is performed to provide a wafer. The wafer has a plurality of exposure areas respectively corresponding to a plurality of mask projections, and the exposure areas may overlap, partially overlap, or not overlap at all. In some embodiments, the wafer has full-area alignment marks that can be used for alignment between the mask and the wafer. In one embodiment, the full-area alignment mark can be one to a plurality of strip structures (such as grooves or bumps), rectangular structures, any other shapes, or combinations thereof on the wafer.
接著,執行操作S120,提供複數光罩。個別光罩中具有個別光罩圖案。在一些實施方式中,光罩的周邊位置,具有光罩對準記號。在一些實施方式中,光罩對準記號的形狀可為一至複數條狀結構、矩形結構、任意其他形狀或其組合,可在後續對應形成的圖案中,形成對應的對準記號。Next, operation S120 is performed to provide a plurality of photomasks. There are individual mask patterns in individual masks. In some embodiments, the peripheral position of the mask has mask alignment marks. In some embodiments, the shape of the mask alignment mark can be one to a plurality of strip structures, rectangular structures, any other shapes, or a combination thereof, and corresponding alignment marks can be formed in the subsequently formed pattern.
接著,執行操作S130,針對後續將使用第一光罩於第一曝光區上執行的第一曝光處理,以第一補償量執行第一曝光前補償,用於校正第一光罩與第一曝光區的對準度或是預先補償後續步驟可能發生的誤差。舉例而言,可調整第一曝光區與第一光罩的相對位置或是調整曝光機的曝光參數等。Next, operation S130 is performed to perform a first pre-exposure compensation with a first compensation amount for the subsequent first exposure process that will be performed on the first exposure area using the first mask to correct the first mask and the first exposure. area alignment or to pre-compensate for errors that may occur in subsequent steps. For example, the relative position of the first exposure area and the first mask can be adjusted or the exposure parameters of the exposure machine can be adjusted.
為增進曝光前補償的精確度,在一些實施方式中,可在正式執行使用第一光罩,在第一曝光區上執行第一曝光處理之前,先經由第一曝光初測試,偵測光罩曝光位置誤差量,計算出第一曝光前補償的第一補償量,據以排除光罩對準以及投影形變等曝光誤差。具體而言,請見第2A圖。In order to improve the accuracy of pre-exposure compensation, in some embodiments, before officially using the first mask and performing the first exposure process on the first exposure area, the mask can be detected through a first exposure preliminary test. The exposure position error amount is used to calculate the first compensation amount before the first exposure, so as to eliminate exposure errors such as mask alignment and projection deformation. Specifically, see Figure 2A.
第2A圖為根據本揭示內容的一些實施方式中第一曝光初測試的示意圖。在第2A圖中,將晶圓200表面上朝任一方向的座標軸設定為Y軸,並將晶圓表面上與Y軸垂直的方向設定為X軸,並對應X軸以及Y軸定義出Z軸(即,Z軸垂直於X軸與Y軸,垂直穿出晶圓200)。Figure 2A is a schematic diagram of a first exposure preliminary test according to some embodiments of the present disclosure. In Figure 2A, the coordinate axis in any direction on the surface of the
晶圓200中包含第一曝光區210,第一光罩300中包含第一光罩圖案310,其中第一光罩圖案310曝光於晶圓200的第一曝光區210中。在一些實施方式中,晶圓200中包含全區對準記號212,可供第一光罩300與晶圓200之間的對準。在一些實施方式中,第一光罩的周邊位置,包含第一光罩對準記號312,例如一至複數條狀結構、矩形結構、任意其他形狀或其組合。The
在第一曝光初測試中,根據第一光罩圖案310曝光於晶圓200上的實際第一曝光位置400,與預期第一光罩圖案310曝光於晶圓200的第一曝光區210上的理論第一曝光位置400(T),計算出第一光罩曝光位置誤差量E1。在一些實施方式中,第一光罩曝光位置誤差量E1,可以藉由比對第一光罩300的實際第一曝光位置400中的實際對準記號410以及理論第一曝光位置400(T)中的理論對準記號410(T)的曝光位置差異而得。在另一些實施方式中,第一光罩曝光位置誤差量E1,也可以直接比對第一光罩300在實際第一曝光位置400以及理論第一曝光位置400(T)之間投影輪廓的曝光位置差異而得。在一實施方式中,可將實際第一曝光位置400以及理論第一曝光位置400(T)以X軸座標與Y軸座標呈現,例如將在理論第一曝光位置400(T)中的點A1(X軸座標x
1, Y軸座標y
1)記載為(16,12),將實際第一曝光位置400中所對應的點A2(X軸座標x
2, Y軸座標y
2)記載為(14,10),藉由分析單點或多點的X軸座標與Y軸座標的變化量並透過數學模型,歸納出第一光罩曝光位置誤差量E1所屬的誤差現象(例如第2A圖中的平移誤差,即在一平面方向移動的誤差),並據此回推獲得第一曝光前補償的第一補償量。
In the first exposure preliminary test, according to the actual
第一曝光前補償的第一補償量除了考量曝光步驟所可能造成的誤差外,在另一些實施方式中,在第一曝光初測試之後,還可進一步進行第一顯影初測試,進一步獲得顯影步驟的第一顯影誤差量,以納入第一曝光前補償將考量的第一補償量中。據以校正顯影步驟中源於物理或化學處理條件、圖案的形狀、圖案的複雜度、圖案位於晶圓的相對位置等因素的顯影誤差。具體而言,請見第2B圖。In addition to considering the possible errors caused by the exposure step, the first compensation amount of the first pre-exposure compensation can also be further performed after the first initial exposure test to further obtain the development step. The first development error amount is included in the first compensation amount that will be considered for the first pre-exposure compensation. This is used to correct development errors in the development step caused by factors such as physical or chemical processing conditions, pattern shape, pattern complexity, and the relative position of the pattern on the wafer. Specifically, see Figure 2B.
第2B圖是根據本揭示內容的一些實施方式中第一顯影初測試的剖面示意圖。在此實施方式中,第一顯影初測試接續於校正第2A圖中的第一光罩曝光誤差量E1之後。也就是,在透過第一曝光初測試(請同參第2A圖),將第一光罩300的實際第一曝光位置400透過基於第一曝光位置誤差量E1的曝光前補償,校正至理論曝光位置400(T)所容許誤差範圍內;接著,執行第一顯影初測試,進一步比較第一光罩圖案310轉移並顯影於晶圓200上的實際第一圖案500與理論第一圖案500(T)之間的第一顯影誤差量P1。然而,第一顯影初測試的執行,並不限定須於校正第一光罩曝光位置誤差量E1之後。在一些實施方式中,也可以不校正第一光罩曝光位置誤差量E1,直接進行第一顯影初測試,獲得第一顯影誤差量。Figure 2B is a schematic cross-sectional view of a first initial development test in accordance with some embodiments of the present disclosure. In this embodiment, the first initial development test follows the correction of the first mask exposure error amount E1 in Figure 2A. That is, after the first exposure test (please refer to Figure 2A), the actual
在一些實施方式中,第一顯影誤差量P1可以透過比對實際第一圖案500與理論第一圖案500(T)上的對準記號(理論第一圖案500(T)上的對準記號,即為第2A圖中第一光罩對準記號312顯影於第一曝光區210上的理論對準記號410(T)的相同位置)的座標位置差異而得。在另一些實施方式中,第一顯影誤差量P1可以透過掃描式電子顯微鏡,比對實際第一圖案500與理論第一圖案500(T)的圖案外觀形變(例如邊角圓化、銳化或圖形缺陷等)或圖案偏移(例如圖案平移、旋轉、正交、放大、縮小等)差異而得。In some embodiments, the first development error amount P1 can be determined by comparing the alignment marks on the actual
根據第一曝光初測試所獲得的第一光罩曝光誤差量E1,以及第一顯影初測試所獲得第一顯影誤差量P1,可計算獲得第一曝光前補償的第一補償量,從而校正曝光步驟以及顯影步驟中的誤差。本領域技術人員也可以根據實際誤差情形,而選擇僅單獨基於第一曝光初測試所獲得的第一光罩曝光誤差量E1、或是以第一顯影初測試中,未校正第一光罩曝光誤差量E1,即獲得的第一顯影誤差量,計算第一曝光前補償的第一補償量。According to the first mask exposure error amount E1 obtained from the first initial exposure test and the first development error amount P1 obtained from the first initial development test, the first compensation amount for the first pre-exposure compensation can be calculated to correct the exposure. steps and errors in the development step. Those skilled in the art can also choose to base solely on the first mask exposure error E1 obtained in the first initial exposure test based on the actual error situation, or based on the uncorrected first mask exposure in the first initial development test. The error amount E1, that is, the obtained first development error amount, calculates the first compensation amount of the first pre-exposure compensation.
應了解到,根據本揭示內容中關於第一曝光前補償的第一補償量的一些實施方式,本領域技術人員還可以經由結合或變更常規的技術手段(例如比對第一曝光位置中或第一圖案中,特定其他位置的位移或形變),同樣獲得曝光誤差量與顯影誤差量,並應用作為第一曝光前補償的第一補償量,校正後續製程中的曝光以及顯影誤差。It should be understood that according to some implementations of the first compensation amount of the first pre-exposure compensation in the present disclosure, those skilled in the art can also combine or change conventional technical means (such as comparing the first exposure position or the first compensation amount). (displacement or deformation of specific other positions in a pattern), the exposure error amount and the development error amount are also obtained, and the first compensation amount as the first pre-exposure compensation is used to correct the exposure and development errors in the subsequent process.
此外,本領域技術人員也可以根據本揭示內容的一些實施方式,結合其他常規的技術手段,獲得微影製程中其他處理步驟可能造成的誤差量(例如更後續的蝕刻處理),並綜合前述之曝光誤差以及顯影誤差,共同換算為第1圖的操作S130中,第一曝光前補償中的第一補償量,除了校正第一光罩與第一曝光區的對準外,同時預先校正微影製程中後續各處理步驟將造成的誤差。In addition, those skilled in the art can also obtain the error amount that may be caused by other processing steps in the lithography process (such as the subsequent etching process) based on some embodiments of the present disclosure, combined with other conventional technical means, and comprehensively combine the foregoing The exposure error and the development error are jointly converted into the first compensation amount in the first pre-exposure compensation in operation S130 in Figure 1. In addition to correcting the alignment of the first mask and the first exposure area, the photolithography is also pre-corrected. Errors caused by subsequent processing steps in the manufacturing process.
請回見第1圖,在操作S130的以第一補償量執行第一曝光前補償後,接著,進行操作S140,執行第一曝光處理。使用第一光罩,在第一曝光區上執行第一曝光處理,以形成對應於第一光罩圖案的第一圖案。Please refer back to FIG. 1. After performing the first pre-exposure compensation with the first compensation amount in operation S130, operation S140 is then performed to perform the first exposure process. Using the first mask, a first exposure process is performed on the first exposure area to form a first pattern corresponding to the first mask pattern.
經由操作S120中的第一曝光前補償,可降低經由操作S140所形成的第一圖案的誤差機率(例如第2A圖的第一光罩曝光誤差量E1或第2B圖的第一顯影誤差量P1)。Through the first pre-exposure compensation in operation S120, the error probability of the first pattern formed through operation S140 (such as the first mask exposure error amount E1 in Figure 2A or the first development error amount P1 in Figure 2B ).
接著,進行操作S150,針對後續將使用第二光罩於第二曝光區上執行的第二曝光處理,以第二補償量執行第二曝光前補償。第二曝光前補償的第二補償量,基本上與操作S130中評估第一曝光前補償的第一補償量的原理大致上類似。具體而言,請見第3A圖以及第3B圖。Next, operation S150 is performed to perform a second pre-exposure compensation with a second compensation amount for the second exposure process that will be subsequently performed on the second exposure area using the second mask. The second compensation amount of the second pre-exposure compensation is basically similar to the principle of evaluating the first compensation amount of the first pre-exposure compensation in operation S130. Specifically, see Figure 3A and Figure 3B.
第3A圖為根據本揭示內容的一些實施方式中第二曝光初測試的示意圖。相對於第2A圖,第3A圖中晶圓200上的待曝光區域,是由第2A圖中的第一光罩300所對應的第一曝光區210,沿方向D平移,轉移至第二光罩600所對應的第二曝光區220。Figure 3A is a schematic diagram of a second exposure preliminary test in some embodiments according to the present disclosure. Compared with Figure 2A, the area to be exposed on the
在第二曝光初測試中,根據第二光罩600曝光於晶圓200上的實際第二曝光位置700,與預期第二光罩600曝光於晶圓200的理論第二曝光位置700(T),計算出第二光罩曝光位置誤差量E2。在一些實施方式中,第二光罩曝光位置誤差量E2,可以類似於第一光罩曝光位置誤差量E1的比對位置分析而得,例如比對第二光罩600的實際對準記號710以及理論對準記號710(T),或是實際第二曝光位置700以及理論第二曝光位置700(T)之間投影輪廓的曝光位置差異而得。在一實施方式中,可將實際第二曝光位置700以及理論第二曝光位置700(T)以X軸座標與Y軸座標呈現,例如將在理論第二曝光位置700(T)中的點B1(X軸座標x
3, Y軸座標y
3)記載為(16,8),將實際第二曝光位置700中所對應的點B2(X軸座標x
4, Y軸座標y
4)記載為(14,6),同樣歸納出第二光罩曝光位置誤差量E2所屬的誤差現象(例如第3A圖中的平移誤差),並據此回推獲得第二曝光前補償的第二補償量。
In the second exposure preliminary test, according to the actual
在另一些實施方式中,在第二曝光初測試,補償第二曝光位置誤差量後,還進一步進行第二顯影初測試,類似於第2B圖所示,獲得顯影步驟的第二顯影誤差量,以納入第二曝光前補償將考量的第二補償量中。據以校正顯影誤差。具體而言,請見第3B圖。In other embodiments, after the second exposure initial test is used to compensate for the second exposure position error, a second initial development test is further performed, similar to that shown in Figure 2B, to obtain the second development error amount of the development step, to be included in the second compensation amount that will be considered for the second pre-exposure compensation. This is used to correct development errors. Specifically, see Figure 3B.
第3B圖是根據本揭示內容的一些實施方式中第二顯影初測試的剖面示意圖。在此實施方式中,在校正第3A圖中的第二光罩曝光誤差量E2之後,接續第二顯影初測試,獲得並校正第二顯影誤差量P2。同前述第2B圖所述,在其他實施方式中,第二顯影初測試的執行,並不限定於校正第二光罩曝光位置誤差量E2之後,也就是,可以不校正第二光罩曝光位置誤差量E2,直接進行第二顯影初測試,獲得第二顯影誤差量。Figure 3B is a schematic cross-sectional view of a second initial development test in accordance with some embodiments of the present disclosure. In this embodiment, after correcting the second mask exposure error amount E2 in Figure 3A, following the second initial development test, the second development error amount P2 is obtained and corrected. As described in Figure 2B above, in other embodiments, the execution of the second initial development test is not limited to correcting the second mask exposure position error E2, that is, the second mask exposure position does not need to be corrected. For the error amount E2, perform the second initial development test directly to obtain the second development error amount.
第二顯影誤差量P2可以透過比對實際第二圖案800與理論第二圖案800(T)上的對準記號(理論第二圖案800(T)上的對準記號,即為第3A圖中第二光罩對準記號612顯影於第二曝光區220中的理論對準記號710(T)的相同位置)的座標位置差異,或是透過掃描式電子顯微鏡,比對實際第二圖案800與理論第二圖案800(T)的圖案外觀形變(例如邊角圓化、銳化或圖形缺陷等)或圖案偏移(例如圖案平移、旋轉、正交、放大、縮小等)差異而得。The second development error amount P2 can be determined by comparing the alignment marks on the actual
根據第二曝光初測試所獲得的第二光罩曝光誤差量E2,以及第二顯影初測試所獲得第二顯影誤差量P2,可計算獲得第二曝光前的第二補償量,從而校正曝光步驟以及顯影步驟中的誤差。本領域技術人員也可以根據實際誤差情形,而選擇僅單獨基於第二曝光初測試所獲得的第二光罩曝光誤差量E2,或是第二顯影初測試中,未校正第二光罩曝光誤差量E2,即獲得的第二顯影誤差量,計算第二曝光前補償的第二補償量。According to the second mask exposure error amount E2 obtained from the second initial exposure test and the second development error amount P2 obtained from the second initial development test, the second compensation amount before the second exposure can be calculated to correct the exposure step. and errors in the development step. Those skilled in the art can also choose to base solely on the second mask exposure error E2 obtained in the second initial exposure test based on the actual error situation, or the second mask exposure error is not corrected in the second initial development test. The amount E2, that is, the obtained second development error amount, is used to calculate the second compensation amount of the second pre-exposure compensation.
請回到第1圖,在操作S150的第二曝光前補償後,接著,執行操作S160,使用第二光罩,在第二曝光區上執行第二曝光處理,以形成對應於第二光罩圖案的第二圖案。Please return to Figure 1. After the second pre-exposure compensation in operation S150, operation S160 is performed to use the second mask to perform a second exposure process on the second exposure area to form a pattern corresponding to the second mask. The second pattern of the pattern.
經由操作S140中的第二曝光前補償,可降低經由操作S160所形成的第二圖案的誤差機率 (例如第3A圖的第二光罩曝光誤差量E2或第3B圖的第二顯影誤差P2)。Through the second pre-exposure compensation in operation S140, the error probability of the second pattern formed through operation S160 can be reduced (for example, the second mask exposure error amount E2 in Figure 3A or the second development error P2 in Figure 3B) .
值得強調的是,本揭示內容的一些實施方式,在曝光場轉移之間,均進行曝光補償,預先校正後續步驟的可能誤差(例如曝光誤差或是顯影誤差),可進一步降低同一晶圓中不同位置的圖案誤差,提升晶圓成品的良率。It is worth emphasizing that in some embodiments of the present disclosure, exposure compensation is performed between exposure field transfers to pre-correct possible errors in subsequent steps (such as exposure errors or development errors), which can further reduce differences in the same wafer. Positional pattern errors improve the yield of finished wafers.
在一些實施方式中,可依據晶圓內的曝光場數量,在執行第二曝光處理之後,參照操作S150中的第二曝光前補償的第二補償量計算方式與原理,重複以後續各曝光場對應的補償量執行另一曝光前補償以及另一曝光處理,降低晶圓中各曝光場所形成的實際圖案與理論圖案的誤差,其中後續各曝光場對應的補償量可基於各曝光場對應的曝光初測試、顯影初測試、其他微影步驟初測試或其組合而得。In some implementations, according to the number of exposure fields in the wafer, after performing the second exposure process, refer to the calculation method and principle of the second compensation amount of the second pre-exposure compensation in operation S150, and repeat the steps for each subsequent exposure field. The corresponding compensation amount performs another pre-exposure compensation and another exposure process to reduce the error between the actual pattern formed at each exposure site in the wafer and the theoretical pattern. The subsequent compensation amount corresponding to each exposure field can be based on the exposure corresponding to each exposure field. It is obtained from the initial test, the initial test of development, the initial test of other photolithography steps, or a combination thereof.
考量在各曝光場的曝光處理前均執行曝光前補償,將提升整體執行時間,降低製程速度,在另一些實施方式中,僅針對特定曝光場執行曝光前補償即可,無須針對晶圓中的所有曝光場執行曝光前補償。即,可經由針對各步驟的初測試,分析晶圓中各曝光場在經微影製程後的各步驟誤差後,選擇性挑選誤差較大的特定多個曝光場,執行曝光前補償,以期在降低誤差之餘,同時兼顧製程速度。Considering that performing pre-exposure compensation before the exposure processing of each exposure field will increase the overall execution time and reduce the process speed, in other implementations, pre-exposure compensation can only be performed for a specific exposure field, and there is no need to target the wafer. All exposure fields perform pre-exposure compensation. That is, through preliminary testing of each step, after analyzing the errors of each exposure field in the wafer after the photolithography process, specific multiple exposure fields with larger errors can be selectively selected to perform pre-exposure compensation, in order to In addition to reducing errors, the process speed is also taken into consideration.
值得強調的是,可以經由與前述相同或相似的初測試 (例如曝光初測試、顯影初測試或其組合),分別獲得相同 (即,相同材質、尺寸以及形狀,並且具有相同曝光區以及對準記號(例如全區對準記號)) 的複數晶圓中各曝光場的補償量的統計數據,藉由分析此些晶圓中各曝光場的補償量的統計數據,將此些晶圓的補償量平均值應用於後續晶圓,經由統計數據的應用,可以降低晶圓間以及批次間的誤差,並且節省後續晶圓用於初測試以獲得補償值的時間,提升生產效率。It is worth emphasizing that the same (i.e., the same material, size and shape, and having the same exposure area and alignment) can be obtained through the same or similar preliminary tests as mentioned above (such as exposure preliminary tests, development preliminary tests or combinations thereof). Marks (such as full-area alignment marks)), by analyzing the statistical data of the compensation amount of each exposure field in these wafers, the compensation of these wafers The average quantity is applied to subsequent wafers. Through the application of statistical data, errors between wafers and batches can be reduced, and the time for subsequent wafers to be used for initial testing to obtain compensation values can be saved, and production efficiency can be improved.
舉例而言,可以計算第一晶圓(例如前述的晶圓200)的第一曝光場的補償量與第二晶圓的第一曝光場的補償量的平均值,將平均值用於後續第三晶圓中,作為第三晶圓的第一曝光場的補償量。在一些實施方式中,第一晶圓、第二晶圓、以及第三晶圓為相同批次中的晶圓。在一些實施方式中,第一晶圓、第二晶圓、以及第三晶圓為不同批次中的晶圓,即,可以計算不同批次晶圓中各曝光場的補償量平均值,應用為後續批次晶圓中各曝光場的補償量。在一些實施方式中,可以統計不同批次數目晶圓中的各曝光場的補償量平均值,例如可以統計2至n個 (n為大於3的正整數,例如3、4、5、6、7、8、9、10或以上的數值) 批次晶圓中各曝光場的補償量平均值,應用為下一個批次晶圓中各曝光場的補償量。在一些實施方式中,特定批次晶圓中各曝光場的補償量,是由此特定晶圓前的2至n個批次晶圓中各曝光場的補償量平均而得。For example, the average of the compensation amount of the first exposure field of the first wafer (such as the aforementioned wafer 200) and the compensation amount of the first exposure field of the second wafer can be calculated, and the average value is used for the subsequent Among the three wafers, the compensation amount is used as the first exposure field of the third wafer. In some embodiments, the first wafer, the second wafer, and the third wafer are wafers in the same batch. In some embodiments, the first wafer, the second wafer, and the third wafer are wafers in different batches, that is, the average compensation amount of each exposure field in different batches of wafers can be calculated, and the application It is the compensation amount for each exposure field in subsequent batches of wafers. In some embodiments, the average compensation amount of each exposure field in different batches of wafers can be counted, for example, 2 to n can be counted (n is a positive integer greater than 3, such as 3, 4, 5, 6, 7, 8, 9, 10 or above) The average compensation amount of each exposure field in a batch of wafers shall be applied as the compensation amount of each exposure field in the next batch of wafers. In some embodiments, the compensation amount of each exposure field in a specific batch of wafers is obtained by averaging the compensation amounts of each exposure field in 2 to n batches of wafers before the specific wafer.
在一些實施方式中,例如請見第1圖,在執行操作S130的第一曝光處理之後、操作S150的第二曝光處理之後,或是第一或第二曝光處理之後,可彈性依需求,對晶圓執行各種化學性處理(例如顯影(以顯影劑處理晶圓,使圖案顯影)、蝕刻(利用蝕刻劑在晶圓上形成所需特徵))或物理性處理(高溫烘烤(舉例而言可去除化學性處理後的殘餘溶劑、或是由於加熱脫水,而提升圖案附著於晶圓的附著力))。In some implementations, for example, see FIG. 1 , after performing the first exposure process of operation S130 , after the second exposure process of operation S150 , or after the first or second exposure process, it is possible to flexibly depend on the needs. The wafer undergoes various chemical processes (such as developing (treating the wafer with a developer to develop a pattern), etching (using an etchant to form desired features on the wafer)) or physical processing (high-temperature baking (for example) It can remove residual solvent after chemical treatment or improve the adhesion of the pattern to the wafer due to heating and dehydration)).
本揭示內容的一些實施方式,提供校正微影製程的方法,針對不同曝光場在微影製程中的可能誤差,在曝光前進行曝光前補償,最適化各個曝光場的製程參數,降低晶圓成品在不同位置上所可能發生的誤差,提升晶圓成品的良率。此外,在一些實施方式中,可以將複數晶圓的補償量平均值應用於後續晶圓,經由統計數據的應用,降低晶圓間以及批次間的誤差,並且節省後續晶圓用於初測試以獲得補償值的時間,提升生產效率。Some embodiments of the present disclosure provide methods for calibrating the lithography process. Aiming at possible errors in the lithography process at different exposure fields, pre-exposure compensation is performed before exposure, optimizing the process parameters of each exposure field, and reducing wafer finished product. The errors that may occur at different positions improve the yield of wafer finished products. In addition, in some embodiments, the average compensation amount of multiple wafers can be applied to subsequent wafers, through the application of statistical data, to reduce inter-wafer and inter-batch errors, and save subsequent wafers for initial testing. In order to obtain the time of compensation value, improve production efficiency.
儘管本揭示內容已根據某些實施方式具體描述細節,其他實施方式也是可行的。因此,所附請求項的精神和範圍不應限於本文所記載的實施方式。Although this disclosure has been described in detail with respect to certain implementations, other implementations are possible. Accordingly, the spirit and scope of the appended claims should not be limited to the embodiments described herein.
100:方法
200:晶圓
210:第一曝光區
212:全區對準記號
220:第二曝光區
300:第一光罩
310:第一光罩圖案
312:第一光罩對準記號
400:實際第一曝光位置
400(T):理論第一曝光位置
410、710:實際對準記號
410(T)、710(T):理論對準記號
500:實際第一圖案
500(T):理論第一圖案
600:第二光罩
610:第二光罩圖案
612:第二光罩對準記號
700:實際第二曝光位置
700(T):理論第二曝光位置
800:實際第二圖案
800(T):理論第二圖案
S110、S120、S130、S140、S150、S160:操作
A1、A2、B1、B2:點
D:方向
E1:第一光罩曝光誤差量
E2:第二光罩曝光誤差量
P1:第一顯影誤差量
P2:第二顯影誤差量
X:X軸
x
1、x
2、x
3、x
4:X軸座標
Y:Y軸
y
1、y
2、y
3、y
4:Y軸座標
Z:Z軸
100: Method 200: Wafer 210: First exposure area 212: Full area alignment mark 220: Second exposure area 300: First mask 310: First mask pattern 312: First mask alignment mark 400: Actual first exposure position 400 (T): theoretical
通過閱讀以下參考附圖對實施方式的詳細描述,可以更完整地理解本揭示內容。 第1圖示例性地描述根據本揭示內容的一些實施方式中形成晶圓圖案的方法的流程; 第2A圖示例性地描述根據本揭示內容的一些實施方式中第一曝光初測試的示意圖; 第2B圖示例性地描述根據本揭示內容的一些實施方式中第一顯影初測試的剖面示意圖; 第3A圖示例性地描述根據本揭示內容的一些實施方式中第二曝光初測試的示意圖;以及 第3B圖示例性地描述根據本揭示內容的一些實施方式中第二顯影初測試的剖面示意圖。 The present disclosure may be more completely understood by reading the following detailed description of the embodiments with reference to the accompanying drawings. Figure 1 schematically depicts a flow of a method of forming a wafer pattern in some embodiments according to the present disclosure; Figure 2A illustrates a schematic diagram of a first exposure preliminary test in some embodiments according to the present disclosure; Figure 2B illustrates a schematic cross-sectional view of a first initial development test in some embodiments according to the present disclosure; Figure 3A illustrates a schematic diagram of a second exposure preliminary test in some embodiments according to the present disclosure; and Figure 3B illustrates a schematic cross-sectional view of a second initial development test in some embodiments of the present disclosure.
100:方法 100:Method
S110、S120、S130、S140、S150、S160:操作 S110, S120, S130, S140, S150, S160: Operation
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US20050094132A1 (en) * | 2003-01-07 | 2005-05-05 | Intel Corporation | Process compensation for step and scan lithography |
TW201001084A (en) * | 2008-06-26 | 2010-01-01 | Ind Tech Res Inst | Method and system for step-and-align interference lithography |
US20120140193A1 (en) * | 2010-12-03 | 2012-06-07 | Nanya Technology Corporation | Dynamic wafer alignment method in exposure scanner system |
US20190369504A1 (en) * | 2018-05-29 | 2019-12-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Lithographic overlay correction and lithographic process |
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US20050094132A1 (en) * | 2003-01-07 | 2005-05-05 | Intel Corporation | Process compensation for step and scan lithography |
TW201001084A (en) * | 2008-06-26 | 2010-01-01 | Ind Tech Res Inst | Method and system for step-and-align interference lithography |
US20120140193A1 (en) * | 2010-12-03 | 2012-06-07 | Nanya Technology Corporation | Dynamic wafer alignment method in exposure scanner system |
US20190369504A1 (en) * | 2018-05-29 | 2019-12-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Lithographic overlay correction and lithographic process |
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