TWI824713B - Wavelength conversion element and backlight module - Google Patents
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Abstract
Description
本發明是有關於一種光源技術,且特別是有關於一種波長轉換元件及背光模組。The present invention relates to a light source technology, and in particular, to a wavelength conversion element and a backlight module.
由於液晶本身不具發光的能力,所以顯示面板必須依賴背光模組提供背光源進而顯示影像。也因此,提升背光源的色彩品質是強化液晶顯像技術的目標之一,而量子點技術剛好符合此需求的基本概念。詳細而言,量子點技術利用藍光發光二極體光源照射直徑不同的綠色量子點和紅色量子點的方式分別激發出紅光和綠光,達到全彩顯示所需要的紅光,綠光和藍光三原色。並且,以高度效率來分解光線,進而達到高色度再現性,大幅提升其色域,讓液晶顯示的色彩更加鮮明。Since liquid crystal itself does not have the ability to emit light, the display panel must rely on a backlight module to provide backlight to display images. Therefore, improving the color quality of backlight is one of the goals of strengthening liquid crystal display technology, and quantum dot technology just meets the basic concept of this requirement. In detail, quantum dot technology uses a blue light-emitting diode light source to illuminate green quantum dots and red quantum dots with different diameters to excite red light and green light respectively to achieve the red light, green light and blue light required for full-color display. Three primary colors. Moreover, it decomposes light with a high degree of efficiency, thereby achieving high chromaticity reproducibility, greatly increasing its color gamut, and making the colors of the liquid crystal display more vivid.
在現有技術架構中,因量子點於結構上能階配位設計關係,皆須使用三明治架構將量子點材料封裝於水氧阻隔膜中,藉以穩定經由量子點材料轉換的光線輝度和色度。由於經由量子點材料轉換後的光線並沒有特定的方向性,而是以四面八方散射的方式出光,造成後續的出光光型較難藉由光學膜片進行調整而容易有漏光的現象。In the existing technical architecture, due to the energy level coordination design relationship of quantum dots in the structure, a sandwich structure must be used to encapsulate the quantum dot material in a water and oxygen barrier film to stabilize the brightness and chromaticity of the light converted by the quantum dot material. Since the light converted by the quantum dot material does not have a specific direction, but is scattered in all directions, the subsequent light pattern is difficult to adjust through the optical film and is prone to light leakage.
“先前技術”段落只是用來幫助了解本發明內容,因此在“先前技術”段落所揭露的內容可能包含一些沒有構成所屬技術領域中具有通常知識者所知道的習知技術。在“先前技術”段落所揭露的內容,不代表該內容或者本發明一個或多個實施例所要解決的問題,在本發明申請前已被所屬技術領域中具有通常知識者所知曉或認知。The "prior art" paragraph is only used to help understand the content of the present invention. Therefore, the content disclosed in the "prior art" paragraph may contain some conventional technologies that do not constitute common knowledge to those with ordinary knowledge in the technical field. The content disclosed in the "Prior Art" paragraph does not mean that the content or the problems to be solved by one or more embodiments of the present invention have been known or recognized by those with ordinary knowledge in the technical field before the application of the present invention.
本發明提供一種波長轉換元件,其轉換效率較佳,且轉換光束的正向出光量較高。The present invention provides a wavelength conversion element with better conversion efficiency and higher forward light output of the converted light beam.
本發明提供一種背光模組,其組裝良率高,且整體厚度較薄。The invention provides a backlight module with high assembly yield and thin overall thickness.
本發明的其他目的和優點可以從本發明所揭露的技術特徵中得到進一步的了解。Other objects and advantages of the present invention can be further understood from the technical features disclosed in the present invention.
為達上述之一或部份或全部目的或是其他目的,本發明的一實施例提出一種波長轉換元件。波長轉換元件包括基板、擋牆結構層以及波長轉換層。擋牆結構層設置在基板的表面上,且定義出多個微凹槽。擋牆結構層的反射率介於1%至90%之間的範圍。波長轉換層設置在這些微凹槽內。波長轉換層包括多個波長轉換粒子。擋牆結構層沿著基板的表面的法線方向上的高度大於波長轉換層沿著基板的表面的法線方向上的高度。In order to achieve one, part or all of the above objects or other objects, an embodiment of the present invention provides a wavelength conversion element. The wavelength conversion element includes a substrate, a barrier structure layer and a wavelength conversion layer. The retaining wall structural layer is disposed on the surface of the substrate and defines a plurality of micro-grooves. The reflectivity of the retaining wall structural layer ranges from 1% to 90%. Wavelength converting layers are disposed within these microgrooves. The wavelength conversion layer includes a plurality of wavelength conversion particles. The height of the barrier structure layer along the normal direction of the surface of the substrate is greater than the height of the wavelength conversion layer along the normal direction of the surface of the substrate.
在本發明的一實施例中,上述的波長轉換元件的擋牆結構層沿著基板的表面的法線方向上具有彼此相背離的第一表面與第二表面。第一表面與第二表面沿著一方向分別具有第一寬度和第二寬度。第二寬度小於或等於第一寬度,且第一寬度和第二寬度都小於0.4毫米。In an embodiment of the present invention, the barrier structure layer of the wavelength conversion element has a first surface and a second surface that are away from each other along the normal direction of the surface of the substrate. The first surface and the second surface respectively have a first width and a second width along a direction. The second width is less than or equal to the first width, and both the first width and the second width are less than 0.4 mm.
在本發明的一實施例中,上述的波長轉換元件的擋牆結構層的材料包括二氧化鈦、聚甲基丙烯酸甲酯、聚碳酸酯或聚苯乙烯。In an embodiment of the present invention, the material of the barrier structure layer of the wavelength conversion element includes titanium dioxide, polymethylmethacrylate, polycarbonate or polystyrene.
在本發明的一實施例中,上述的波長轉換元件還包括硬塗層,覆蓋波長轉換層背離基板的表面。In an embodiment of the present invention, the above-mentioned wavelength conversion element further includes a hard coating layer covering the surface of the wavelength conversion layer facing away from the substrate.
在本發明的一實施例中,上述的波長轉換元件的波長轉換層具有背離基板的表面,且波長轉換層的表面暴露在空氣中。In an embodiment of the present invention, the wavelength conversion layer of the wavelength conversion element has a surface facing away from the substrate, and the surface of the wavelength conversion layer is exposed to the air.
在本發明的一實施例中,上述的波長轉換元件的擋牆結構層具有定義每一個微凹槽的第一部分與第二部分。第一部分與第二部分沿著基板的表面的法線方向分別具有第一高度與第二高度,且第一高度不同於第二高度。In an embodiment of the present invention, the barrier structure layer of the wavelength conversion element has a first part and a second part defining each micro-groove. The first part and the second part respectively have a first height and a second height along the normal direction of the surface of the substrate, and the first height is different from the second height.
在本發明的一實施例中,上述的波長轉換元件的波長轉換層為多個波長轉換圖案。這些波長轉換圖案分別填充在擋牆結構層的多個微凹槽內。這些波長轉換圖案的任兩者沿著基板的表面的法線方向的厚度差小於或等於0.5微米。In an embodiment of the present invention, the wavelength conversion layer of the above-mentioned wavelength conversion element is a plurality of wavelength conversion patterns. These wavelength conversion patterns are respectively filled in multiple micro-grooves of the retaining wall structural layer. The difference in thickness of any two of these wavelength conversion patterns along the normal direction of the surface of the substrate is less than or equal to 0.5 microns.
在本發明的一實施例中,上述的波長轉換元件的波長轉換層為多個波長轉換圖案。這些波長轉換圖案分別填充在擋牆結構層的多個微凹槽內。各個波長轉換圖案適於吸收激發光束並發出轉換光束。這些波長轉換圖案發出的多個轉換光束在CIE1931色彩空間中的色度座標x的色度差值小於0.01,且這些轉換光束在CIE1931色彩空間中的色度座標y的色度差值小於0.01。In an embodiment of the present invention, the wavelength conversion layer of the above-mentioned wavelength conversion element is a plurality of wavelength conversion patterns. These wavelength conversion patterns are respectively filled in multiple micro-grooves of the retaining wall structural layer. Each wavelength conversion pattern is adapted to absorb the excitation beam and emit a converted beam. The chromaticity difference of the chromaticity coordinate x of the multiple converted light beams emitted by these wavelength conversion patterns in the CIE1931 color space is less than 0.01, and the chromaticity difference of the chromaticity coordinate y of these converted light beams in the CIE1931 color space is less than 0.01.
在本發明的一實施例中,上述的波長轉換元件的擋牆結構層包括第一結構層與第二結構層。第二結構層於基板的表面的法線方向上堆疊於第一結構層上。第一結構層沿著基板的表面的法線方向上具有彼此相背離的第一表面與第二表面。第二表面連接第二結構層。第二結構層具有背離第二表面的第三表面。第三表面沿著一方向分別具有第一寬度、第二寬度和第三寬度。第二寬度小於或等於第一寬度,第三寬度小於第二寬度,且第一寬度、第二寬度和第三寬度都小於0.4毫米。In an embodiment of the present invention, the barrier structural layer of the wavelength conversion element includes a first structural layer and a second structural layer. The second structural layer is stacked on the first structural layer in a normal direction of the surface of the substrate. The first structural layer has a first surface and a second surface that are away from each other along the normal direction of the surface of the substrate. The second surface connects the second structural layer. The second structural layer has a third surface facing away from the second surface. The third surface has a first width, a second width and a third width respectively along one direction. The second width is less than or equal to the first width, the third width is less than the second width, and the first width, the second width and the third width are all less than 0.4 mm.
在本發明的一實施例中,上述的波長轉換元件的擋牆結構層沿著基板的表面的法線方向的高度小於1毫米。In an embodiment of the present invention, the height of the barrier structure layer of the wavelength conversion element along the normal direction of the surface of the substrate is less than 1 mm.
在本發明的一實施例中,上述的波長轉換元件的擋牆結構層具有定義多個微凹槽的其中相鄰兩者的第一側面與第二側面,且第一側面和第二側面為平面、折面、曲面、或上述的組合。In an embodiment of the present invention, the barrier structure layer of the wavelength conversion element has a first side and a second side defining adjacent two of the plurality of micro-grooves, and the first side and the second side are Flat, folded, curved, or a combination of the above.
在本發明的一實施例中,上述的波長轉換元件的各個波長轉換粒子包括核層、殼層以及多個疏水官能基。殼層包覆核層。這些疏水官能基設置在殼層背離核層的表面上。In an embodiment of the present invention, each wavelength conversion particle of the above-mentioned wavelength conversion element includes a core layer, a shell layer and a plurality of hydrophobic functional groups. The shell covers the core. These hydrophobic functional groups are provided on the surface of the shell layer facing away from the core layer.
在本發明的一實施例中,上述的波長轉換元件的各個疏水官能基為聚矽烷聚合物。In an embodiment of the present invention, each hydrophobic functional group of the above-mentioned wavelength conversion element is a polysilane polymer.
在本發明的一實施例中,上述的波長轉換元件的波長轉換層還包括疏水性基材,且多個波長轉換粒子分散地設置在疏水性基材內。In one embodiment of the present invention, the wavelength conversion layer of the above-mentioned wavelength conversion element further includes a hydrophobic base material, and a plurality of wavelength conversion particles are dispersedly provided in the hydrophobic base material.
在本發明的一實施例中,上述的波長轉換元件的擋牆結構層包括多個稜鏡結構。這些稜鏡結構彼此相鄰排列並定義出多個微凹槽。波長轉換層填入這些微凹槽內並形成多個波長轉換圖案,且這些波長轉換圖案的橫截面輪廓為三角狀。In an embodiment of the present invention, the barrier structure layer of the above-mentioned wavelength conversion element includes a plurality of barrier structures. These structures are arranged adjacent to each other and define multiple micro-grooves. The wavelength conversion layer is filled into the micro grooves and forms a plurality of wavelength conversion patterns, and the cross-sectional profiles of these wavelength conversion patterns are triangular.
為達上述之一或部份或全部目的或是其他目的,本發明的一實施例提出一種背光模組。背光模組包括光源及波長轉換元件。光源適於提供激發光束。波長轉換元件設置在激發光束的傳遞路徑上,且包括基板、擋牆結構層以及波長轉換層。擋牆結構層設置在基板的表面上,且定義出多個微凹槽。擋牆結構層的反射率介於1%至90%之間的範圍。波長轉換層設置在這些微凹槽內,且包括多個波長轉換粒子。擋牆結構層沿著基板的表面的法線方向上的高度大於波長轉換層沿著基板的表面的法線方向上的高度。In order to achieve one, part or all of the above objects or other objects, an embodiment of the present invention provides a backlight module. The backlight module includes a light source and a wavelength conversion component. The light source is adapted to provide an excitation beam. The wavelength conversion element is arranged on the transmission path of the excitation beam, and includes a substrate, a barrier structure layer and a wavelength conversion layer. The retaining wall structural layer is disposed on the surface of the substrate and defines a plurality of micro-grooves. The reflectivity of the retaining wall structural layer ranges from 1% to 90%. The wavelength conversion layer is disposed within the micro-grooves and includes a plurality of wavelength conversion particles. The height of the barrier structure layer along the normal direction of the surface of the substrate is greater than the height of the wavelength conversion layer along the normal direction of the surface of the substrate.
在本發明的一實施例中,上述的背光模組的各個波長轉換粒子包括核層、殼層及多個疏水官能基。殼層包覆核層。這些疏水官能基設置在殼層背離核層的表面上。In an embodiment of the present invention, each wavelength conversion particle of the above-mentioned backlight module includes a core layer, a shell layer and a plurality of hydrophobic functional groups. The shell covers the core. These hydrophobic functional groups are provided on the surface of the shell layer facing away from the core layer.
在本發明的一實施例中,上述的背光模組還包括導光板。導光板具有入光面以及連接入光面的出光面。光源設置在導光板的入光面的一側。波長轉換元件設置在導光板的出光面的一側。In an embodiment of the present invention, the above-mentioned backlight module further includes a light guide plate. The light guide plate has a light incident surface and a light exit surface connected to the light incident surface. The light source is arranged on one side of the light incident surface of the light guide plate. The wavelength conversion element is arranged on one side of the light exit surface of the light guide plate.
基於上述,在本發明的一實施例的波長轉換元件及背光模組中,擋牆結構層的多個微凹槽內設有波長轉換層,且波長轉換層的填充高度低於擋牆結構層的高度。由於擋牆結構層的反射率介於1%至90%之間的範圍,除了可增加激發光束的轉換效率外,還能限制轉換光束的散射角度,使其正向出光量增加。另一方面,擋牆結構層的設置還可以提升波長轉換元件的挺性,除了能滿足整體厚度薄化的需求外,還能避免薄化後造成背光模組的組裝良率下降的問題。Based on the above, in the wavelength conversion element and the backlight module according to an embodiment of the present invention, the wavelength conversion layer is provided in the plurality of micro-grooves of the barrier structure layer, and the filling height of the wavelength conversion layer is lower than that of the barrier structure layer. the height of. Since the reflectivity of the retaining wall structural layer ranges from 1% to 90%, in addition to increasing the conversion efficiency of the excitation beam, it can also limit the scattering angle of the converted beam, increasing the amount of forward light. On the other hand, the setting of the retaining wall structural layer can also improve the stiffness of the wavelength conversion element. In addition to meeting the need for overall thickness thinning, it can also avoid the problem of reduced assembly yield of the backlight module caused by thinning.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本發明。The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. Directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only for reference to the directions in the attached drawings. Accordingly, the directional terms used are illustrative and not limiting of the invention.
圖1是依照本發明的一實施例的背光模組的剖視示意圖。圖2是圖1的波長轉換元件的放大示意圖。圖3是圖2的波長轉換元件的俯視示意圖。圖4是圖3的另一種變形實施例的波長轉換元件的俯視示意圖。圖5是圖2的波長轉換粒子的放大示意圖。圖6是圖2的另一實施例的擋牆結構層的放大示意圖。圖7A至圖7G是圖6的另一些變形實施例的擋牆結構層的剖視示意圖。FIG. 1 is a schematic cross-sectional view of a backlight module according to an embodiment of the present invention. FIG. 2 is an enlarged schematic diagram of the wavelength conversion element of FIG. 1 . FIG. 3 is a schematic top view of the wavelength conversion element of FIG. 2 . FIG. 4 is a schematic top view of the wavelength conversion element of another modified embodiment of FIG. 3 . FIG. 5 is an enlarged schematic diagram of the wavelength conversion particles of FIG. 2 . FIG. 6 is an enlarged schematic view of the retaining wall structural layer of another embodiment of FIG. 2 . 7A to 7G are schematic cross-sectional views of retaining wall structural layers in other modified embodiments of FIG. 6 .
請參照圖1,背光模組10包括導光板100、光源110和波長轉換元件120。導光板100具有入光面100is以及連接入光面100is的出光面100es。光源110設置在導光板100的入光面100is的一側。波長轉換元件120設置在導光板100的出光面100es的一側。更具體地說,本實施例的背光模組10為側入式背光模組,但不以此為限。Referring to FIG. 1 , the
在本實施例中,光源110適於朝向導光板100的入光面100is提供激發光束EB,而激發光束EB經由導光板100的橫向傳遞後自導光板100的出光面100es離開導光板100並入射波長轉換元件120。波長轉換元件120設置在激發光束EB的傳遞路徑上,適於接收來自導光板100的激發光束EB,並發出轉換光束CB。In this embodiment, the
請參照圖2及圖3,波長轉換元件120包括基板SUB、擋牆結構層123和波長轉換層125。擋牆結構層123設置在基板SUB的表面SUBs上,且定義出多個微凹槽MG。波長轉換層125設置在這些微凹槽MG內。在本實施例中,擋牆結構層123可以是由多個第一擋牆123BW1與多個第二擋牆123BW2交叉排列而成。Referring to FIGS. 2 and 3 , the
舉例來說,多個第一擋牆123BW1的排列方向可垂直於多個第二擋牆123BW2的排列方向,且第一擋牆123BW1的延伸方向可垂直於第二擋牆123BW2的延伸方向。亦即,本實施例的擋牆結構層123在基板SUB的表面SUBs的法線方向上呈現出網狀(mesh)排列的結構。在本實施例中,擋牆結構層123所定義的多個微凹槽MG可沿著多個第一擋牆123BW1或多個第二擋牆123BW2的排列方向排列。即,這些微凹槽MG是以二維陣列的方式間隔排列於基板SUB上,且設置在這些微凹槽MG內的波長轉換層125被擋牆結構層123切分為彼此間隔排列且呈方形狀的多個波長轉換圖案125P。For example, the arrangement direction of the plurality of first blocking walls 123BW1 may be perpendicular to the arrangement direction of the plurality of second blocking walls 123BW2, and the extending direction of the first blocking walls 123BW1 may be perpendicular to the extending direction of the second blocking walls 123BW2. That is, the retaining
然而,本發明不限於此。請參照圖4,在另一實施例中,波長轉換元件120A的擋牆結構層123”也可以是由具單一延伸方向的多個擋牆123BW沿著單一方向(例如圖4的水平方向)間隔排列而成。因此,擋牆結構層123”定義出的多個微凹槽MG-A也是沿著所述單一方向間隔排列,且設置在這些微凹槽MG-A內的波長轉換層125A可被切分為沿著所述單一方向間隔排列且呈長條狀的多個波長轉換圖案。在另一未繪示的實施例中,擋牆結構層定義出的多個微凹槽還可以蜂巢狀(honeycomb)的方式進行排列。However, the present invention is not limited to this. Please refer to FIG. 4 . In another embodiment, the barrier
請參照圖2,特別注意的是,擋牆結構層123沿著基板SUB的表面SUBs的法線方向上的高度H大於波長轉換層125沿著基板SUB的表面SUBs的法線方向上的高度(即波長轉換圖案125P1的厚度t1或波長轉換圖案125P2的厚度t2),且擋牆結構層123的反射率介於1%至90%之間的範圍。據此,可透過擋牆結構層123將激發光束EB反射回微凹槽MG內的波長轉換層125,除了能增加激發光束EB的轉換效率外,還能限制轉換光束CB的散射角度,使其正向出光量增加。在本實施例中,擋牆結構層123的材料包括基材(例如壓克力樹脂)和高反射率材料(例如二氧化鈦、聚甲基丙烯酸甲酯、聚碳酸酯或聚苯乙烯),其中高反射率材料均勻地混合於基材中。較佳地,擋牆結構層123沿著基板SUB的表面SUBs的法線方向的高度H可小於1毫米,以提高製程良率並確保背光模組10的出光品質。Please refer to FIG. 2 . Please note that the height H of the
另一方面,在本實施例中,擋牆結構層123沿著基板SUB的表面SUBs的法線方向上具有彼此相背離的第一表面SF1和第二表面SF2。第一表面SF1和第二表面SF2沿著一方向(例如平行於基板SUB的表面SUBs的方向,或圖2中的水平方向或垂直於擋牆結構層123的延伸方向)分別具有第一寬度W1和第二寬度W2。特別說明的是,擋牆結構層123的第二寬度W2小於或等於第一寬度W1,且這些寬度都要小於0.4毫米。如此,可大幅降低擋牆結構層123在基板SUB的表面SUBs的法線方向上的可視性,以確保採用背光模組10的顯示器的顯示品質。On the other hand, in this embodiment, the retaining
進一步而言,波長轉換層125可包括多個波長轉換粒子WCP。在本實施例中,波長轉換粒子WCP的種類是以兩種為例進行示範性地說明,例如波長轉換粒子WCP1和波長轉換粒子WCP2,但不以此為限。在其他實施例中,波長轉換層所包含的波長轉換粒子WCP種類當可視實際應用需求而調整。Furthermore, the
舉例來說,在本實施例中,波長轉換粒子WCP1適於吸收入射的激發光束EB(如圖1所示)後發出紅光,而波長轉換粒子WCP2適於吸收入射的激發光束EB後發出綠光,其中激發光束EB例如是藍光,但不以此為限。例如:激發光束EB也可以是波長介於200奈米至450奈米之間的紫外光(ultraviolet)。For example, in this embodiment, the wavelength conversion particle WCP1 is suitable for absorbing the incident excitation beam EB (as shown in Figure 1) and then emits red light, while the wavelength conversion particle WCP2 is suitable for absorbing the incident excitation beam EB and then emitting green light. Light, where the excitation beam EB is, for example, blue light, but is not limited thereto. For example, the excitation beam EB can also be ultraviolet light with a wavelength between 200 nanometers and 450 nanometers.
請參照圖2及圖5,波長轉換粒子WCP包括核層CL、殼層SL和多個疏水官能基HFG,如圖5所示。殼層SL包覆核層CL。這些疏水官能基HFG設置在殼層SL背離核層CL的表面SLs上。詳細而言,波長轉換粒子WCP的核層CL為發光核心,且其材料例如包括硒化鎘(Cadmium selenide,CdSe)、硫化鎘(Cadmium Sulfide,CdS)或硒化鋅(Zinc Selenide,ZnSe),但不以此為限。為了避免核層CL受水氣及氧氣的侵入而失效,包覆核層CL的殼層SL可作為保護層,且其材料例如包括二氧化矽(Silicon dioxide,SiO2)、硫化鎘或硒化鋅等,但不以此為限。在本實施例中,波長轉換粒子WCP的核層CL和殼層SL的總粒徑Da可介於22奈米至25奈米之間。Please refer to Figures 2 and 5. The wavelength conversion particle WCP includes a core layer CL, a shell layer SL and multiple hydrophobic functional groups HFG, as shown in Figure 5. The shell layer SL covers the core layer CL. These hydrophobic functional groups HFG are provided on the surfaces SLs of the shell layer SL facing away from the core layer CL. In detail, the core layer CL of the wavelength conversion particle WCP is a luminescent core, and its material includes, for example, cadmium selenide (CdSe), cadmium sulfide (Cdmium Sulfide, CdS) or zinc selenide (Zinc Selenide, ZnSe), But it is not limited to this. In order to prevent the core layer CL from failing due to the intrusion of water vapor and oxygen, the shell layer SL covering the core layer CL can be used as a protective layer, and its material includes, for example, silicon dioxide (SiO2), cadmium sulfide or zinc selenide. etc., but not limited to this. In this embodiment, the total particle diameter Da of the core layer CL and the shell layer SL of the wavelength conversion particle WCP may be between 22 nanometers and 25 nanometers.
殼層SL的表面SLs可具有多個配體(ligand)LG。前述多個疏水官能基HFG可經由這些配體LG而配位於殼層SL的表面SLs上,並形成一疏水膜層。在本實施例中,疏水官能基HFG例如是聚矽烷聚合物。藉由此疏水膜層的包覆,可進一步提升波長轉換粒子WCP的阻水氧能力。也因此,在本實施例中,波長轉換層125在背離基板SUB的一側表面125s上無須設置額外的保護層、阻隔層或另一基板來阻水氧,有助於波長轉換元件120的薄化。更具體地說,波長轉換層125的表面125s可暴露在空氣AIR中。The surface SLs of the shell SL can have multiple ligands LG. The aforementioned plurality of hydrophobic functional groups HFG can be coordinated on the surface SLs of the shell layer SL through these ligands LG, and form a hydrophobic film layer. In this embodiment, the hydrophobic functional group HFG is, for example, polysilane polymer. By coating with this hydrophobic film layer, the water and oxygen blocking ability of the wavelength conversion particles WCP can be further improved. Therefore, in this embodiment, there is no need to provide an additional protective layer, barrier layer or another substrate on the
在本實施例中,波長轉換層125還可包括疏水性基材HPM,且這些波長轉換粒子WCP分散地設置在疏水性基材HPM內。疏水性基材HPM的材料例如包括環氧矽、矽膠或壓克力。據此,可進一步提升波長轉換層125的阻水氧能力。然而,本發明不限於此。在其他實施例中,波長轉換層的基材材料也可包括非疏水性基材。In this embodiment, the
特別說明的是,透過擋牆結構層123的設置,可進一步增加薄化後的波長轉換元件120的挺性(stiffness),使基板SUB的選用厚度可降至12微米至50微米之間,進而讓波長轉換元件120的整體厚度可小於100微米。也就是說,薄化後的波長轉換元件120可藉由擋牆結構層123的支撐而具有足夠的挺性來避免背光模組10的組裝良率下降。In particular, through the arrangement of the retaining
另一方面,擋牆結構層123的設置還能增加波長轉換層125的膜厚均勻性。舉例來說,分別填充在多個微凹槽MG內的多個波長轉換圖案125P的任兩者沿著基板SUB的表面SUBs的法線方向的厚度差(例如圖2的波長轉換圖案125P1與波長轉換圖案125P2的厚度差t2-t1的絕緣值)可小於或等於0.5微米。On the other hand, the provision of the
從另一觀點來說,由於填充在擋牆結構層123的多個微凹槽MG內的多個波長轉換圖案125P具有較佳的膜厚均勻性,這些波長轉換圖案125P各自吸收激發光束EB後發出的轉換光束CB在CIE1931色彩空間中的色度座標x的色度差值可小於0.01,且在CIE1931色彩空間中的色度座標y的色度差值可小於0.01。也就是說,分別設置在多個微凹槽MG內的這些波長轉換圖案125P發出的轉換光束CB可具有較佳的色度均勻性。較佳地,這些轉換光束CB在CIE1931色彩空間中的色度座標x的色度差值以及色度座標y的色度差值都小於0.005。From another point of view, since the plurality of
請參照圖2及圖6,不同於圖2的擋牆結構層123,在另一實施例中,擋牆結構層123’可包括於基板SUB的表面SUBs的法線方向上堆疊的第一結構層123L1與第二結構層123L2。第一結構層123L1沿著基板SUB的表面SUBs的法線方向上具有彼此相背離的第一表面SF1和第二表面SF2。第一結構層123L1的第二表面SF2連接第二結構層123L2。第二結構層123L2具有背離第二表面SF2的第三表面SF3。第一表面SF1、第二表面SF2和第三表面SF3沿著一方向(例如平行於基板SUB的表面SUBs的方向,或圖6中的水平方向或垂直於擋牆結構層123的延伸方向)分別具有第一寬度W1、第二寬度W2和第三寬度W3。Please refer to Figures 2 and 6. Different from the
特別注意的是,擋牆結構層123的第二寬度W2小於或等於第一寬度W1,第三寬度W3小於第二寬度W2,且這些寬度都要小於0.4毫米。如此,可大幅降低擋牆結構層123在基板SUB的表面SUBs的法線方向上的可視性,以確保採用背光模組10的顯示器的顯示品質。It is particularly noted that the second width W2 of the retaining wall
然而,本發明不限於此。在另一些變形實施例中,擋牆結構層的第一側面和第二側面也可以各自是折面(例如圖7A的擋牆結構層123A的第一側面123ss1-A和第二側面123ss2-A和圖7E的擋牆結構層123E的第一側面123ss1-E和第二側面123ss2-E)、曲面(例如圖7C的擋牆結構層123C的第一側面123ss1-C和第二側面123ss2-C和圖7G的擋牆結構層123G的第一側面123ss1-G和第二側面123ss2-G)或平面(例如圖6的擋牆結構層123的第一側面123ss1和第二側面123ss2以及圖7D的擋牆結構層123D的第一側面123ss1-D和第二側面123ss2-D)與曲面的組合(例如圖7B的擋牆結構層123B的第一側面123ss1-B和第二側面123ss2-B和圖7F的擋牆結構層123F的第一側面123ss1-F和第二側面123ss2-F)。However, the present invention is not limited to this. In other modified embodiments, the first side and the second side of the retaining wall structural layer may also be folded surfaces (for example, the first side 123ss1-A and the second side 123ss2-A of the retaining wall
特別注意的是,在圖7A的擋牆結構層123A中,其第一側面123ss1-A與第二側面123ss2-A可呈非對稱設置。在圖7D至圖7G的擋牆結構層123D、擋牆結構層123E、擋牆結構層123F和擋牆結構層123G中,這些擋牆結構層的第三表面SF3-D、第三表面SF3-E、第三表面SF3-F和第三表面SF3-G並非如圖6的第三表面SF3、圖7A的第三表面SF3-A、圖7B的第三表面SF3-B和圖7C的第三表面SF3-C為平面。It is particularly important to note that in the retaining wall
舉例來說,在圖7D的擋牆結構層123D中,其第一側面123ss1-D與第二側面123ss2-D相交並形成一頂角。相似地,在圖7E的擋牆結構層123E中,其第一側面123ss1-E與第二側面123ss2-E相交並形成一頂角。在圖7F的擋牆結構層123F以及圖7G的擋牆結構層123G中,其第三表面SF3-F和第三表面SF3-G都為曲面。For example, in the retaining wall
以下將列舉另一些實施例以詳細說明本揭露,其中相同的構件將標示相同的符號,並且省略相同技術內容的說明,省略部分請參考前述實施例,以下不再贅述。Other embodiments will be enumerated below to describe the present disclosure in detail, in which the same components will be marked with the same symbols, and the description of the same technical content will be omitted. Please refer to the previous embodiments for the omitted parts, which will not be described again below.
圖8是依照本發明的另一實施例的波長轉換元件的剖視示意圖。請參照圖8,本實施例的波長轉換元件120B與圖2的波長轉換元件120的主要差異在於:擋牆結構層的厚度多樣性。具體而言,波長轉換元件120B的擋牆結構層123H具有定義任一個微凹槽的兩部分,例如:定義微凹槽MG1-B的第一部分123P1和第二部分123P2以及定義微凹槽MG2-B的第二部分123P2和第三部分123P3。FIG. 8 is a schematic cross-sectional view of a wavelength conversion element according to another embodiment of the present invention. Please refer to FIG. 8 . The main difference between the
特別注意的是,擋牆結構層123H的多個部分各自的高度可不同。在本實施例中,擋牆結構層123H的第一部分123P1、第二部分123P2和第三部分123P3沿著基板SUB的表面SUBs的法線方向分別具有第一高度H1、第二高度H2和第三高度H3,且這三個高度都不相同。例如:第一高度H1可大於第二高度H2,且第三高度H3可大於第一高度H1,但不以此為限。透過擋牆結構層123H的上述高低差可避免波長轉換元件120B與其他光學膜片間的吸附現象發生。It is particularly noted that the heights of the portions of the retaining wall
圖9是依照本發明的又一實施例的波長轉換元件的剖視示意圖。請參照圖9,不同於圖2的波長轉換元件120,本實施例的波長轉換元件120C還可選擇性地包括硬塗層HCL。此硬塗層HCL可覆蓋在波長轉換層125背離基板SUB的表面125s。亦即,本實施例的波長轉換層125並未如圖2的波長轉換層125一樣暴露在空氣AIR中。Figure 9 is a schematic cross-sectional view of a wavelength conversion element according to yet another embodiment of the present invention. Referring to FIG. 9 , unlike the
舉例來說,在本實施例中,硬塗層HCL的水氣穿透率可大於10g/m2∙day,而硬塗層HCL的氧氣穿透率可大於10cm3/m2∙day∙atm。也就是說,在本實施例中,由於使用了具有高阻水氣/氧氣能力的硬塗層HCL,波長轉換層125的波長轉換粒子WCP也可使用不含有疏水官能基HFG(如圖5所示)的波長轉換粒子來取代。For example, in this embodiment, the water vapor transmission rate of the hard coating HCL can be greater than 10g/m2∙day, and the oxygen transmission rate of the hard coating HCL can be greater than 10cm3/m2∙day∙atm. That is to say, in this embodiment, due to the use of the hard coating HCL with high water vapor/oxygen resistance ability, the wavelength conversion particles WCP of the
圖10是依照本發明的再一實施例的波長轉換元件的剖視示意圖。請參照圖10,本實施例的波長轉換元件120D與圖2的波長轉換元件120的差異在於:擋牆結構層的構型不同。具體而言,在本實施例中,擋牆結構層123I例如是多個稜鏡結構所組成,這些稜鏡結構例如沿著圖10的水平方向並排設置,並且定義出多個微凹槽MG-C。FIG. 10 is a schematic cross-sectional view of a wavelength conversion element according to yet another embodiment of the present invention. Please refer to Figure 10. The difference between the
在本實施例中,波長轉換層125B填入這些稜鏡結構(即擋牆結構層123I)間的多個微凹槽MG-C,並且被切分為彼此間隔排列且橫截面(即圖10的圖面)輪廓為三角狀的多個波長轉換圖案125P”。特別說明的是,由於本實施例的多個稜鏡結構彼此緊鄰設置,擋牆結構層123I的穿透率都較前述各個實施例的擋牆結構層來得高。In this embodiment, the wavelength conversion layer 125B is filled in a plurality of micro-grooves MG-C between these structures (ie, the retaining wall structure layer 123I), and is cut into spaced apart arrangements and cross-sections (ie, FIG. 10 The figure) has a plurality of
圖11是依照本發明的另一實施例的背光模組的剖視示意圖。請參照圖11,不同於圖1的背光模組10為側入式背光模組,本實施例的背光模組20為直下式背光模組。舉例來說,在本實施例中,背光模組20可包括電路板CBD和多個光源110A。這些光源110A分散地設置在電路板CBD上並且與電路板CBD電性連接。波長轉換元件120重疊這些光源110A的出光面設置,並且適於將各個光源110A發出的激發光束EB吸收後發出轉換光束CB。FIG. 11 is a schematic cross-sectional view of a backlight module according to another embodiment of the present invention. Please refer to FIG. 11 . Different from the
由於本實施例的波長轉換元件120相似於圖1的波長轉換元件120,詳細說明請參見前述實施例的相關段落,於此便不再贅述。另一方面,前述各實施例的波長轉換元件都可用來取代本實施例的波長轉換元件120以滿足不同的應用設計或製程需求。Since the
綜上所述,在本發明的一實施例的波長轉換元件及背光模組中,擋牆結構層的多個微凹槽內設有波長轉換層,且波長轉換層的填充高度低於擋牆結構層的高度。由於擋牆結構層的反射率介於1%至90%之間的範圍,除了可增加激發光束的轉換效率外,還能限制轉換光束的散射角度,使其正向出光量增加。另一方面,擋牆結構層的設置還可以提升波長轉換元件的挺性,除了能滿足整體厚度薄化的需求外,還能避免薄化後造成背光模組的組裝良率下降的問題。To sum up, in the wavelength conversion element and the backlight module according to one embodiment of the present invention, the wavelength conversion layer is provided in the plurality of micro-grooves of the barrier structure layer, and the filling height of the wavelength conversion layer is lower than the barrier wall The height of the structural layer. Since the reflectivity of the retaining wall structural layer ranges from 1% to 90%, in addition to increasing the conversion efficiency of the excitation beam, it can also limit the scattering angle of the converted beam, increasing the amount of forward light. On the other hand, the setting of the retaining wall structural layer can also improve the stiffness of the wavelength conversion element. In addition to meeting the need for overall thickness thinning, it can also avoid the problem of reduced assembly yield of the backlight module caused by thinning.
10、20:背光模組 100:導光板 100es:出光面 100is:入光面 110、110A:光源 120、120A、120B、120C、120D:波長轉換元件 123、123’、123”、123A~123H、123I:擋牆結構層 123BW:擋牆 123BW1:第一擋牆 123BW2:第二擋牆 123L1:第一結構層 123L2:第二結構層 123P1~123P3:第一部分~第三部分 123ss1、123ss1-A~123ss1-G:第一側面 123ss2、123ss2-A~123ss2-G:第二側面 125、125A、125B:波長轉換層 125P、125P1、125P2、125P”:波長轉換圖案 125s、SLs、SUBs:表面 AIR:空氣 CB:轉換光束 CBD:電路板 CL:核層 Da:粒徑 EB:激發光束 H、H1、H2、H3:高度 HCL:硬塗層 HFG:疏水官能基 HPM:疏水性基材 LG:配體 MG、MG-A、MG1-B、MG2-B、MG-C:微凹槽 SF1:第一表面 SF2:第二表面 SF3、SF3-A~SF3-G:第三表面 SL:殼層 SUB:基板 t1、t2:厚度 W1~W3:第一寬度~第三寬度 WCP、WCP1、WCP2:波長轉換粒子 10, 20: Backlight module 100:Light guide plate 100es: light-emitting surface 100is: light incident surface 110, 110A: light source 120, 120A, 120B, 120C, 120D: wavelength conversion element 123, 123’, 123”, 123A~123H, 123I: retaining wall structural layer 123BW: retaining wall 123BW1: The first retaining wall 123BW2:Second retaining wall 123L1: First structural layer 123L2: Second structural layer 123P1~123P3: Part 1~Part 3 123ss1, 123ss1-A~123ss1-G: first side 123ss2, 123ss2-A~123ss2-G: second side 125, 125A, 125B: Wavelength conversion layer 125P, 125P1, 125P2, 125P”: wavelength conversion pattern 125s, SLs, SUBs: surface AIR: air CB: Conversion beam CBD: circuit board CL: nuclear layer Da: particle size EB: excitation beam H, H1, H2, H3: height HCL: hard coating HFG: hydrophobic functional group HPM: hydrophobic substrate LG: ligand MG, MG-A, MG1-B, MG2-B, MG-C: micro grooves SF1: first surface SF2: Second surface SF3, SF3-A~SF3-G: third surface SL: Shell SUB:Substrate t1, t2: thickness W1~W3: first width~third width WCP, WCP1, WCP2: wavelength conversion particles
圖1是依照本發明的一實施例的背光模組的剖視示意圖。 圖2是圖1的波長轉換元件的放大示意圖。 圖3是圖2的波長轉換元件的俯視示意圖。 圖4是圖3的另一種變形實施例的波長轉換元件的俯視示意圖。 圖5是圖2的波長轉換粒子的放大示意圖。 圖6是圖2的另一實施例的擋牆結構層的放大示意圖。 圖7A至圖7G是圖6的另一些變形實施例的擋牆結構層的剖視示意圖。 圖8是依照本發明的另一實施例的波長轉換元件的剖視示意圖。 圖9是依照本發明的又一實施例的波長轉換元件的剖視示意圖。 圖10是依照本發明的再一實施例的波長轉換元件的剖視示意圖。 圖11是依照本發明的另一實施例的背光模組的剖視示意圖。 FIG. 1 is a schematic cross-sectional view of a backlight module according to an embodiment of the present invention. FIG. 2 is an enlarged schematic diagram of the wavelength conversion element of FIG. 1 . FIG. 3 is a schematic top view of the wavelength conversion element of FIG. 2 . FIG. 4 is a schematic top view of the wavelength conversion element of another modified embodiment of FIG. 3 . FIG. 5 is an enlarged schematic diagram of the wavelength conversion particles of FIG. 2 . FIG. 6 is an enlarged schematic view of the retaining wall structural layer of another embodiment of FIG. 2 . 7A to 7G are schematic cross-sectional views of retaining wall structural layers in other modified embodiments of FIG. 6 . FIG. 8 is a schematic cross-sectional view of a wavelength conversion element according to another embodiment of the present invention. Figure 9 is a schematic cross-sectional view of a wavelength conversion element according to yet another embodiment of the present invention. FIG. 10 is a schematic cross-sectional view of a wavelength conversion element according to yet another embodiment of the present invention. FIG. 11 is a schematic cross-sectional view of a backlight module according to another embodiment of the present invention.
120:波長轉換元件 120:Wavelength conversion element
123:擋牆結構層 123:Retaining wall structural layer
123ss1:第一側面 123ss1: first side
123ss2:第二側面 123ss2:Second side
125:波長轉換層 125: Wavelength conversion layer
125P1、125P2:波長轉換圖案 125P1, 125P2: Wavelength conversion pattern
125s、SUBs:表面 125s, SUBs: Surface
AIR:空氣 AIR: air
H:高度 H: height
HPM:疏水性基材 HPM: hydrophobic substrate
MG:微凹槽 MG: micro groove
SF1:第一表面 SF1: first surface
SF2:第二表面 SF2: Second surface
SUB:基板 SUB:Substrate
t1、t2:厚度 t1, t2: thickness
WCP、WCP1、WCP2:波長轉換粒子 WCP, WCP1, WCP2: wavelength conversion particles
W1:第一寬度 W1: first width
W2:第二寬度 W2: second width
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