TWI824437B - Wafer carrying device - Google Patents

Wafer carrying device Download PDF

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TWI824437B
TWI824437B TW111109215A TW111109215A TWI824437B TW I824437 B TWI824437 B TW I824437B TW 111109215 A TW111109215 A TW 111109215A TW 111109215 A TW111109215 A TW 111109215A TW I824437 B TWI824437 B TW I824437B
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sub
groove
disk
main
tray
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TW111109215A
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Chinese (zh)
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TW202336914A (en
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曹正翰
吳翰宗
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環球晶圓股份有限公司
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Priority to TW111109215A priority Critical patent/TWI824437B/en
Priority to CN202211168150.4A priority patent/CN116791066A/en
Publication of TW202336914A publication Critical patent/TW202336914A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A wafer carrying device comprises a wafer carrier which includes a main plate and a plurality of sub plates. The main plate has a first upper surface, a first lower surface and a plurality of recess. Each of the recesses forms an upper opening at the first upper surface. Each of the sub plates has a carrying recess for accommodating a wafer. Each of the sub plates are respectively placed in each of the recesses. Thereby, the sub plate can be detached from the main plate.

Description

晶圓承載裝置Wafer carrier

本發明係與化學氣相沉積設備有關;特別是指一種用於化學氣相沉積設備的晶圓承載裝置。The present invention relates to chemical vapor deposition equipment; in particular, it refers to a wafer carrying device for chemical vapor deposition equipment.

圖1所示為習用的晶圓承載盤100,其具有複數承載槽100a,該些承載槽100a供放置晶圓102,之後將晶圓承載盤100置入化學氣相沉積設備的製程腔室中,以在晶圓102的上表面沉積沉積層。由於成長沉積層時,製程腔室係處於高溫狀態,承載槽100a中於前一輪製程所殘留的物質容易自晶圓102的下表面擴散進入晶圓102中,特別是前一輪製程的沉積層材質與當次製程的沉積層材質不同時,將會對晶圓102造成嚴重的污染。是以,經常需要清潔晶圓承載盤100才能改善污染的情況。Figure 1 shows a conventional wafer carrier 100, which has a plurality of carrier slots 100a for placing wafers 102. The wafer carrier 100 is then placed into a process chamber of a chemical vapor deposition equipment. , to deposit a deposition layer on the upper surface of wafer 102 . Since the process chamber is in a high-temperature state when the deposition layer is growing, the material remaining in the holding tank 100a from the previous round of process can easily diffuse into the wafer 102 from the lower surface of the wafer 102, especially the material of the deposition layer from the previous round of process. If the material of the deposition layer is different from that of the current process, serious contamination will be caused to the wafer 102 . Therefore, it is often necessary to clean the wafer carrier 100 to improve the contamination situation.

然而,晶圓承載盤100重量重,人員不易拿取,造成清潔的不便。另外,為了維持產量,在清潔晶圓承載盤100時,必需有另外的晶圓承載盤100替換使用。惟,晶圓承載盤100的造價高,多個晶圓承載盤100勢必增加維護的成本。However, the wafer carrying tray 100 is heavy and difficult for personnel to handle, causing cleaning inconvenience. In addition, in order to maintain throughput, when cleaning the wafer carrying tray 100, another wafer carrying tray 100 must be replaced. However, the manufacturing cost of the wafer carrying tray 100 is high, and multiple wafer carrying trays 100 will inevitably increase the maintenance cost.

有鑑於此,本發明之目的在於提供一種晶圓承載裝置,具有可分離的主盤與子盤,可易於清潔。In view of this, an object of the present invention is to provide a wafer carrying device with a separable main tray and a sub-tray that can be easily cleaned.

本發明之另一目的在於提供一種晶圓承載裝置,可以減少維護成本。Another object of the present invention is to provide a wafer carrying device that can reduce maintenance costs.

緣以達成上述目的,本發明提供的一種晶圓承載裝置包含一晶圓承載盤,該晶圓承載盤包括一主盤與複數個子盤,其中,該主盤具有一第一上表面、一第一下表面與複數個容槽,各該容槽於該第一上表面形成有一上開口;各該子盤具有一承載槽,該承載槽供放置晶圓,各該子盤自各該上開口置入各該容槽中。In order to achieve the above object, the present invention provides a wafer carrying device including a wafer carrying tray. The wafer carrying tray includes a main tray and a plurality of sub- trays, wherein the main tray has a first upper surface, a first A lower surface and a plurality of receiving slots, each receiving slot is formed with an upper opening on the first upper surface; each sub-tray has a carrying slot for placing wafers, and each sub-tray is placed from its upper opening. into the respective slots.

本發明之效果在於藉由可分離的主盤與子盤的設計,子盤重量較輕,體積較小,易於清潔,且可以減少主盤清潔的頻率。子盤體積小製作成本低,特定的子盤可以專用於特定成分的沉積層的製程中。藉此,可以減少維護成本。The effect of the present invention is that through the design of the separable main disk and the sub-disk, the sub-disk is lighter in weight, smaller in size, easy to clean, and can reduce the frequency of cleaning the main disk. The sub-disk is small in size and low in production cost, and a specific sub-disk can be used exclusively in the process of depositing a layer with a specific composition. In this way, maintenance costs can be reduced.

為能更清楚地說明本發明,茲舉較佳實施例並配合圖式詳細說明如後。請參圖2至圖5所示,為本發明第一較佳實施例之晶圓承載裝置1,包含一晶圓承載盤10,該晶圓承載盤10用以供置入化學氣相沉積設備的製程腔室,例如是有機金屬化學氣相沉積設備。In order to illustrate the present invention more clearly, the preferred embodiments are described in detail below along with the drawings. Please refer to FIGS. 2 to 5 , which is a wafer carrying device 1 according to a first preferred embodiment of the present invention. It includes a wafer carrying tray 10 for placing chemical vapor deposition equipment. The process chamber is, for example, an organometallic chemical vapor deposition equipment.

該晶圓承載盤10包括一主盤12與複數個子盤22,其中,該主盤12具有相背對的一第一上表面122與一第一下表面124,且自該第一上表面122凹入形成有複數個容槽14,各該容槽14於該第一上表面122形成有一上開口144。於本實施例中,主盤12係由石墨材質所製成,且各該容槽14的形狀為圓形槽,且容槽14周圍的槽壁142為封閉狀。該些容槽14結構相同,於後以一個容槽14為例說明,該容槽14具有一主槽段16與一次槽段18,該次槽段18位於該主槽段16的上方且具有該上開口144。該次槽段18的槽寬大於該主槽段16的槽寬,且於該次槽段18與該主槽段16之間具有一抵肩部20,該抵肩部20係朝向該上開口144。The wafer carrying tray 10 includes a main tray 12 and a plurality of sub- trays 22 , wherein the main tray 12 has a first upper surface 122 and a first lower surface 124 opposite to each other, and from the first upper surface 122 A plurality of recesses 14 are formed in the recess, and each recess 14 forms an upper opening 144 on the first upper surface 122 . In this embodiment, the main plate 12 is made of graphite material, and the shape of each receiving groove 14 is a circular groove, and the groove wall 142 around the receiving groove 14 is closed. The containers 14 have the same structure. One container 14 is taken as an example below. The container 14 has a main tank section 16 and a primary tank section 18 . The secondary tank section 18 is located above the main tank section 16 and has The upper opening 144. The groove width of the secondary groove section 18 is greater than the groove width of the main groove section 16, and there is a shoulder 20 between the secondary groove section 18 and the main groove section 16. The shoulder 20 is facing the upper opening. 144.

各該子盤22可分離地自各置於各該容槽14的上開口144置入各該容槽14中。於本實施例中,各該子盤22的材質與主盤12相同且形狀為圓形盤體。該些子盤22結構相同,於後以一個子盤22為例說明。Each sub-disk 22 is detachably placed in each of the receiving slots 14 from the upper opening 144 of the receiving slot 14 . In this embodiment, each sub-disk 22 is made of the same material as the main disk 12 and is in the shape of a circular disk. The sub-disks 22 have the same structure, and one sub-disk 22 is taken as an example for description below.

該子盤22具有一承載槽222,該承載槽222係由子盤22頂部凹入形成。該子盤22具有一主體部24與一周緣部26,該主體部24具有該承載槽222,該周緣部26一體連接於該主體部24的徑向外圍且環繞該主體部24。該周緣部26的頂面定義為一第二上表面262。該主體部24的底面定義為一第二下表面242。The sub-disk 22 has a bearing groove 222 , and the bearing groove 222 is formed by a concave top of the sub-disk 22 . The sub-disk 22 has a main body 24 and a peripheral portion 26 . The main body 24 has the bearing groove 222 . The peripheral portion 26 is integrally connected to the radial periphery of the main body 24 and surrounds the main body 24 . The top surface of the peripheral portion 26 is defined as a second upper surface 262 . The bottom surface of the main body 24 is defined as a second lower surface 242 .

當該子盤22置入對應的容槽14後,該子盤22的主體部24位於該容槽14的主槽段16中,該周緣部26位於該次槽段18且該周緣部26的底部抵於該抵肩部20,並且該第二上表面262的位置不高於該第一上表面122的位置。於本實施例中,該第二上表面262與該第一上表面122實質上齊平,該第二下表面242面向該容槽14的槽底。When the sub-disk 22 is inserted into the corresponding receptacle 14 , the main body portion 24 of the sub-disk 22 is located in the main groove section 16 of the receptacle 14 , the peripheral portion 26 is located in the secondary groove section 18 and the peripheral portion 26 is located in the secondary groove section 18 . The bottom abuts the shoulder portion 20 , and the position of the second upper surface 262 is not higher than the position of the first upper surface 122 . In this embodiment, the second upper surface 262 is substantially flush with the first upper surface 122 , and the second lower surface 242 faces the bottom of the groove 14 .

藉由上述結構,將晶圓W置於子盤22的承載槽222後,即可將整個晶圓承載盤10置入化學氣相沉積設備的製程腔室中,以在晶圓W上成長沉積層(例如是磊晶層)。由於該第二上表面262不高於該第一上表面122,因此,該晶圓承載盤10置放於製程腔室時,較不易影響製程氣體的流動,讓製程氣體可以穩定在晶圓W表面反應產生沉積層。在沉積製程結束後,即可將該晶圓承載盤10自製程腔室取出,並將晶圓W自子盤22的承載槽取出。With the above structure, after the wafer W is placed in the carrier groove 222 of the sub-tray 22, the entire wafer carrier 10 can be placed in the process chamber of the chemical vapor deposition equipment to grow deposition on the wafer W. Stacked layers (such as epitaxial layers). Since the second upper surface 262 is not higher than the first upper surface 122 , when the wafer carrier 10 is placed in the process chamber, it is less likely to affect the flow of the process gas, allowing the process gas to be stabilized on the wafer W. Surface reactions produce a deposited layer. After the deposition process is completed, the wafer carrier tray 10 can be taken out from the process chamber, and the wafer W can be taken out from the carrier slot of the sub tray 22 .

由於晶圓W只和子盤22接觸,只要再將原有的子盤22自主盤12的容槽14取下,再換上乾淨的子盤22,即可再用於新一輪的沉積製程中。較佳者,子盤22的數量多於主盤12之容槽14的數量,例如子盤22的數量為容槽14數量的二倍以上。Since the wafer W is only in contact with the sub-disk 22, as long as the original sub-disk 22 is removed from the receptacle 14 of the main disk 12 and replaced with a clean sub-disk 22, it can be reused in a new round of deposition process. Preferably, the number of sub-disks 22 is greater than the number of slots 14 of the main disk 12 , for example, the number of sub-disks 22 is more than twice the number of slots 14 .

子盤22重量較輕,體積較小,可易於清潔。亦可對特定成分的沉積層綁定特定的子盤22,即可避免不同成分的沉積層交叉污染晶圓W的情形。由於主盤12不接觸晶圓,因此主盤12不需時常更換或清潔。The sub-tray 22 is lighter in weight and smaller in size and can be easily cleaned. A specific sub-disk 22 can also be bound to a deposition layer of a specific composition, so as to avoid cross-contamination of the wafer W by deposition layers of different compositions. Since the main disk 12 does not contact the wafer, the main disk 12 does not need to be replaced or cleaned frequently.

圖6至圖7所示為本發明第二較佳實施例之晶圓承載裝置2,其具有大致相同於第一實施例之結構,不同的是,主盤30的各容槽304於底部的第一下表面302形成有一下開口304a。當各子盤22置入對應的容槽304後,各子盤22的主體部24之第二下表面242不突出各容槽304的下開口304a。藉此,當晶圓承載盤28置於一平面時,主盤30的第一下表面302可抵在該平面上,且該平面不會將子盤22往上頂起。欲將子盤22自主盤30上取下時,可自主盤30底部的下開口304a將子盤22往上頂,即可讓子盤22突出上開口304b以脫離主盤30。6 to 7 show the wafer carrying device 2 according to the second preferred embodiment of the present invention. It has a structure that is substantially the same as that of the first embodiment. The difference is that each receiving slot 304 of the main tray 30 is at the bottom. The first lower surface 302 is formed with a lower opening 304a. When each sub-disk 22 is placed into the corresponding receiving slot 304, the second lower surface 242 of the main body portion 24 of each sub-disk 22 does not protrude from the lower opening 304a of each receiving slot 304. Thereby, when the wafer carrying tray 28 is placed on a flat surface, the first lower surface 302 of the main tray 30 can abut the flat surface, and the flat surface will not push up the sub-tray 22 . When you want to remove the sub-tray 22 from the main tray 30, you can push the sub-tray 22 upward through the lower opening 304a at the bottom of the main tray 30, so that the sub-tray 22 protrudes from the upper opening 304b to separate from the main tray 30.

圖8所示為本發明第三較佳實施例之晶圓承載裝置3,其係以第二實施例為基礎,更包含一移除治具32,該移除治具有複數個凸塊322,該些凸塊322分別位於對應該些下開口304a的位置。圖8中顯示一個凸塊322。該晶圓承載盤28置於該移除治具32上時,該些凸塊322分別抵於該些子盤22的主體部24的第二下表面242,且各該凸塊322向上將各該子盤22的至少一部分往上推出各該容槽304的上開口304b,藉此,讓該些子盤22可同與主盤30分離,便於取下該些子盤22。Figure 8 shows a wafer carrying device 3 according to the third preferred embodiment of the present invention. It is based on the second embodiment and further includes a removal jig 32 with a plurality of bumps 322. The protrusions 322 are respectively located at positions corresponding to the lower openings 304a. A bump 322 is shown in Figure 8 . When the wafer carrier 28 is placed on the removal jig 32 , the bumps 322 respectively abut against the second lower surfaces 242 of the main portions 24 of the sub-plates 22 , and each of the bumps 322 moves upward. At least a part of the sub-pans 22 is pushed upward from the upper opening 304b of each receiving slot 304, thereby allowing the sub-pans 22 to be separated from the main pan 30, making it easier to remove the sub-pans 22.

圖9至圖12所示為本發明第四較佳實施例之晶圓承載裝置的子盤34,該子盤34具有大致相同於第一實施例的結構,不同的是,該子盤34係由至少二個盤體以可分離的方式拚接而,而具有一個接縫342,其它子盤34的結構相同,不再贅述。實務上,該子盤34亦可由三個以上的盤體拚接而成,而具有多個接縫。9 to 12 show the sub-tray 34 of the wafer carrying device according to the fourth preferred embodiment of the present invention. The sub-tray 34 has a structure that is substantially the same as that of the first embodiment. The difference is that the sub-tray 34 is It is composed of at least two disks that are detachably spliced together and has a seam 342. The structures of other sub-disks 34 are the same and will not be described again. In practice, the sub-pan 34 can also be composed of three or more pans and have multiple joints.

該兩個盤體分別為一第一盤體40與一第二盤體50,各該盤體分別具有該主體部36的一部分以及該周緣部38的一部分。該第一盤體40具有一第一壁面42與一第一槽面44與一側向槽48,該側向槽48的槽壁形成一第一接部482。該第二盤體50具有一第二壁面52與一第二槽面54,且第二盤體50的三個側面形成一第二接部56。該第二接部56與該第一接部482相互補。第二盤體50可以與該第一盤體40的側向槽48結合或分離(圖9、圖11參照),且該第一接部482與該第二接部56拚接而於彼此之間形成接縫342,該第一壁面42與該第二壁面52構成承載槽344的槽壁,該第一槽面44與該第二槽面54構成該承載槽344的槽面。該接縫342在主體部36與周緣部38之間延伸,且該接縫342的一部分位於該主體部36的底部且位於承載槽344的下方。The two disks are a first disk 40 and a second disk 50 respectively, and each disk has a part of the main body part 36 and a part of the peripheral part 38 respectively. The first plate body 40 has a first wall surface 42, a first groove surface 44 and a lateral groove 48. The groove wall of the lateral groove 48 forms a first connecting portion 482. The second plate body 50 has a second wall surface 52 and a second groove surface 54, and three side surfaces of the second plate body 50 form a second connecting portion 56. The second connecting portion 56 and the first connecting portion 482 are complementary to each other. The second plate body 50 can be combined with or separated from the lateral groove 48 of the first plate body 40 (refer to FIGS. 9 and 11 ), and the first connecting part 482 and the second connecting part 56 are spliced to each other. A seam 342 is formed therebetween. The first wall surface 42 and the second wall surface 52 constitute the groove wall of the bearing groove 344 . The first groove surface 44 and the second groove surface 54 constitute the groove surface of the bearing groove 344 . The seam 342 extends between the main body part 36 and the peripheral edge part 38 , and a part of the seam 342 is located at the bottom of the main body part 36 and below the bearing groove 344 .

請配合圖12,沿著平行於該承載槽344的槽面的一軸向X上,該第一壁面42與該第二壁面52之間具有一最大距離L1,本實施例中,該最大距離L1為承載槽344的於徑向上的槽寬。於該軸向X上,該第二壁面52至該第二接面562的頂部之間具有一長度L2,該長度L2不大於該最大距離L1的四分之一。於本實施例中,該長度L2為該承載槽344的該最大距離L1的四分之一。由於長度L2不大於最大距離L1的四分之一,因此,晶圓W有較大的面積與第一盤體40接觸,當兩個盤體分離時,第一盤體40仍可穩定地托住晶圓W。當晶圓W置承載槽344中時,晶圓W遮蓋位於承載槽344下方的接縫342上,減少承載槽344下方的接縫342直接暴露於外的面積,以減少製程氣體進入承載槽344下方的接縫342。Please refer to Figure 12, along an axis X parallel to the groove surface of the bearing groove 344, there is a maximum distance L1 between the first wall surface 42 and the second wall surface 52. In this embodiment, the maximum distance L1 is the groove width of the bearing groove 344 in the radial direction. In the axial direction X, there is a length L2 between the second wall surface 52 and the top of the second contact surface 562, and the length L2 is no more than one-quarter of the maximum distance L1. In this embodiment, the length L2 is one-quarter of the maximum distance L1 of the carrying groove 344 . Since the length L2 is not greater than a quarter of the maximum distance L1, the wafer W has a larger area in contact with the first disk 40. When the two disks are separated, the first disk 40 can still support it stably. Live wafer W. When the wafer W is placed in the carrying groove 344, the wafer W covers the seam 342 below the carrying groove 344, reducing the area of the seam 342 under the carrying groove 344 that is directly exposed to the outside, so as to reduce the process gas from entering the carrying groove 344. Seam 342 below.

另外,該第一盤體40的第一接部482具有一第一接面482a,該第一接面482a為斜面且位於該主體部36的底部而位於承載槽344下方。該第一盤體40的下表面46與該第一接面482a的夾角θ介於30~60度,於本實施例中,夾角θ以35度為例,在一實施例中,夾角θ亦可為40或45度。該第二盤體50具有一第二接面562,該第二接面562為斜面且位於該主體部36的底部而位於承載槽344下方,該第二接面562與該第一接面482a相接觸。In addition, the first connecting portion 482 of the first plate body 40 has a first connecting surface 482a. The first connecting surface 482a is an inclined surface and is located at the bottom of the main body 36 and below the bearing groove 344. The included angle θ between the lower surface 46 of the first plate 40 and the first joint surface 482a ranges from 30 to 60 degrees. In this embodiment, the included angle θ is 35 degrees. In one embodiment, the included angle θ is also Can be 40 or 45 degrees. The second plate body 50 has a second joint surface 562. The second joint surface 562 is an inclined surface and is located at the bottom of the main body 36 and below the load-bearing groove 344. The second joint surface 562 and the first joint surface 482a contact.

當兩個盤體分離時,可將一吸取器(圖未示)沿著第一接面482a向上移動,插入晶圓W與第一盤體40的第一槽面44之間,讓吸取器吸住晶圓W的底部,以取下晶圓W。此外,亦可如圖13所示,將第二盤體50向上提起,即可讓第二盤體50同時將晶圓W往上頂起,更利於拿取晶圓W。When the two disks are separated, a suction device (not shown) can be moved upward along the first interface 482a and inserted between the wafer W and the first groove surface 44 of the first disk 40 to allow the suction device to move upward. Suction the bottom of the wafer W to remove the wafer W. In addition, as shown in FIG. 13 , the second tray 50 can also be lifted upward, so that the second tray 50 can push up the wafer W at the same time, which is more convenient for taking the wafer W.

圖14所示為本發明第五較佳實施例之晶圓承載裝置的子盤58,該子盤58具有大致相同於第四實施例的結構,不同的是,該第一盤體60的下表面602與該第一接面604的夾角θ介於120~150度,於本實施例中,夾角以145度為例,在一實施例中,夾角θ亦可為140或135度。Figure 14 shows the sub-tray 58 of the wafer carrying device according to the fifth preferred embodiment of the present invention. The sub-tray 58 has a structure that is substantially the same as that of the fourth embodiment. The difference is that the lower part of the first tray 60 The angle θ between the surface 602 and the first interface 604 is between 120 and 150 degrees. In this embodiment, the angle θ is 145 degrees. In one embodiment, the angle θ can also be 140 or 135 degrees.

圖15至圖17所示為本發明第六較佳實施例之晶圓承載裝置的子盤62,該子盤62具有大致相同於第四實施例的結構,不同的是,第一盤體64具有扇形的側向槽66,第二盤體70呈扇形且與側向槽66相拼接。側向槽66的兩側槽壁662呈傾斜,第一接面662a位於兩槽壁662的連接處。第二盤體70的兩側面的傾斜方向與側向槽66的槽壁662相反,第二接面72位於兩側面的連接處。該第一盤體64的下表面68與該第一接面662a的夾角θ介於30~60度。Figures 15 to 17 show the sub-tray 62 of the wafer carrying device according to the sixth preferred embodiment of the present invention. The sub-tray 62 has substantially the same structure as the fourth embodiment, except that the first tray body 64 It has a fan-shaped lateral groove 66 , and the second plate body 70 is fan-shaped and spliced with the lateral groove 66 . The two side groove walls 662 of the lateral groove 66 are inclined, and the first contact surface 662a is located at the connection of the two groove walls 662 . The inclination direction of the two side surfaces of the second plate 70 is opposite to the groove wall 662 of the lateral groove 66 , and the second joint surface 72 is located at the connection between the two side surfaces. The angle θ between the lower surface 68 of the first plate body 64 and the first contact surface 662a ranges from 30 to 60 degrees.

圖18與圖19所示為本發明第七較佳實施例之晶圓承載裝置的子盤74,該子盤74具有大致相同於第六實施例的結構,不同的是,第一盤體76的側向槽78的槽壁傾斜的方向及第二盤體82的兩側面822的傾斜方向與第六實施例相反,第二接面822a位於兩側面的連接處。該第一盤體76的下表面80與該第一接面782的夾角θ介於120~150度。Figures 18 and 19 show the sub-tray 74 of the wafer carrying device according to the seventh preferred embodiment of the present invention. The sub-tray 74 has a structure that is substantially the same as that of the sixth embodiment. The difference is that the first tray body 76 The inclination direction of the groove wall of the lateral groove 78 and the inclination direction of the two side surfaces 822 of the second plate body 82 are opposite to those of the sixth embodiment, and the second joint surface 822a is located at the connection of the two side surfaces. The angle θ between the lower surface 80 of the first plate body 76 and the first contact surface 782 is between 120 and 150 degrees.

上述第四至第七實施例的子盤皆可應用於第一至第三實施例中。The sub-disks of the fourth to seventh embodiments described above can be applied to the first to third embodiments.

據上所述,本發明之晶圓承載裝置之晶圓承載盤具有可分離的主盤與子盤,可便於清潔子盤,且可以減少主盤清潔或更換的頻率。子盤體積小製作成本低,可備大量的子盤替換使用,特定的子盤可專用於特定成分的沉積層的製程中。相較於習用的晶圓承載盤,可有效減少維護成本。According to the above, the wafer carrying tray of the wafer carrying device of the present invention has a separable main tray and a sub-tray, which can facilitate cleaning of the sub-tray and reduce the frequency of cleaning or replacement of the main tray. The sub-disks are small in size and low in production cost, and a large number of sub-disks can be prepared for replacement. A specific sub-disk can be used exclusively in the process of depositing layers of specific compositions. Compared with conventional wafer carrying trays, maintenance costs can be effectively reduced.

以上所述僅為本發明較佳可行實施例而已,舉凡應用本發明說明書及申請專利範圍所為之等效變化,理應包含在本發明之專利範圍內。The above are only the best possible embodiments of the present invention. Any equivalent changes made by applying the description and patent scope of the present invention should be included in the patent scope of the present invention.

[習用] 100:晶圓承載盤 100a:承載槽 102:晶圓 [本發明] 1:晶圓承載裝置 10:晶圓承載盤 12:主盤 122:第一上表面 124:第一下表面 14:容槽 142:槽壁 144:上開口 16:主槽段 18:次槽段 20:抵肩部 22:子盤 222:承載槽 24:主體部 242:第二下表面 26:周緣部 262:第二上表面 2:晶圓承載裝置 28:晶圓承載盤 30:主盤 302:第一下表面 304:容槽 304a:下開口 304b:上開口 3:晶圓承載裝置 32:移除治具 322:凸塊 34:子盤 342:接縫 344:承載槽 36:主體部 38:周緣部 40:第一盤體 42:第一壁面 44:第一槽面 46:下表面 48:側向槽 482:第一接部 482a:第一接面 50:第二盤體 52:第二壁面 54:第二槽面 56:第二接部 562:第二接面 58子盤 60第一盤體 602下表面 604第一接面 62子盤 64第一盤體 66側向槽 662槽壁 662a第一接面 68下表面 70第二盤體 72第二接面 74子盤 76第一盤體 78側向槽 782第一接面 80下表面 82第二盤體 822側面 822a第二接面 L1:最大距離 L2:長度 W:晶圓 X:軸向 θ:夾角 [common usage] 100:Wafer carrier 100a: Bearing tank 102:wafer [Invention] 1: Wafer carrying device 10:Wafer carrier 12: Main disk 122:First upper surface 124:First lower surface 14: Container 142:Trough wall 144:Open the top 16: Main groove section 18: Secondary slot section 20: Shoulder 22:Sub plate 222: Bearing tank 24:Main part 242: Second lower surface 26: Peripheral part 262:Second upper surface 2: Wafer carrying device 28:Wafer carrier 30: Main disk 302: First lower surface 304:Tank 304a: Lower opening 304b: Upper opening 3: Wafer carrying device 32:Remove fixture 322: Bump 34: Subplate 342:Seam 344: Bearing tank 36:Main part 38: Peripheral part 40:The first plate 42:First wall 44:First groove surface 46: Lower surface 48: Lateral groove 482:First connection 482a: First interface 50:Second plate body 52:Second wall 54:Second groove surface 56:Second connection 562:Second interface 58 sub-disks 60 first plate 602 lower surface 604 first interface 62 sub-disks 64 first plate 66 lateral slots 662 tank wall 662a first junction 68 lower surface 70 second plate body 72 second interface 74 sub-plates 76 first plate 78 lateral slot 782 first interface 80 lower surface 82 second plate body 822 side 822a second junction L1: Maximum distance L2: length W:wafer X:Axis θ: included angle

圖1為習用的晶圓承載盤之立體圖。 圖2為本發明第一較佳實施例之晶圓承載裝置的立體圖。 圖3為本發明第一較佳實施例之晶圓承載裝盤的俯視圖。 圖4為圖3之4-4方向剖視圖。 圖5為本發明第一較佳實施例之晶圓承載裝盤的分解剖視示意圖。 圖6為本發明第二較佳實施例之晶圓承載裝置的立體圖。 圖7為本發明第二較佳實施例之晶圓承載裝盤的剖視示意圖。 圖8為本發明第三較佳實施例之晶圓承載裝置的剖視示意圖。 圖9為本發明第四較佳實施例之晶圓承載裝置的子盤的立體圖。 圖10為本發明第四較佳實施例之晶圓承載裝置的子盤的俯視圖。 圖11為本發明第四較佳實施例之晶圓承載裝置的子盤的分解立體圖。 圖12為圖10之12-12方向剖視圖。 圖13為本發明第四較佳實施例之子盤分離的示意圖。 圖14為本發明第五較佳實施例之晶圓承載裝置的子盤的剖視示意圖。 圖15為本發明第六較佳實施例之晶圓承載裝置的子盤的俯視圖。 圖16為本發明第六較佳實施例之晶圓承載裝置的子盤的分解示意圖。 圖17為本發明第六較佳實施例之晶圓承載裝置的子盤的剖視示意圖。 圖18為本發明第七較佳實施例之晶圓承載裝置的子盤的分解示意圖。 圖19為本發明第七較佳實施例之晶圓承載裝置的子盤的剖視示意圖。 Figure 1 is a perspective view of a conventional wafer carrier. FIG. 2 is a perspective view of the wafer carrying device according to the first preferred embodiment of the present invention. FIG. 3 is a top view of the wafer loading tray according to the first preferred embodiment of the present invention. Figure 4 is a cross-sectional view along the direction 4-4 of Figure 3 . FIG. 5 is an exploded schematic diagram of a wafer loading tray according to the first preferred embodiment of the present invention. FIG. 6 is a perspective view of the wafer carrying device according to the second preferred embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a wafer loading tray according to the second preferred embodiment of the present invention. FIG. 8 is a schematic cross-sectional view of the wafer carrying device according to the third preferred embodiment of the present invention. FIG. 9 is a perspective view of the sub-tray of the wafer carrying device according to the fourth preferred embodiment of the present invention. FIG. 10 is a top view of the sub-tray of the wafer carrying device according to the fourth preferred embodiment of the present invention. FIG. 11 is an exploded perspective view of the sub-tray of the wafer carrying device according to the fourth preferred embodiment of the present invention. Figure 12 is a cross-sectional view along the direction 12-12 of Figure 10 . Figure 13 is a schematic diagram of the daughter disk separation according to the fourth preferred embodiment of the present invention. 14 is a schematic cross-sectional view of the sub-tray of the wafer carrying device according to the fifth preferred embodiment of the present invention. FIG. 15 is a top view of the sub-tray of the wafer carrying device according to the sixth preferred embodiment of the present invention. FIG. 16 is an exploded schematic view of the sub-tray of the wafer carrying device according to the sixth preferred embodiment of the present invention. FIG. 17 is a schematic cross-sectional view of the sub-tray of the wafer carrying device according to the sixth preferred embodiment of the present invention. FIG. 18 is an exploded schematic view of the sub-tray of the wafer carrying device according to the seventh preferred embodiment of the present invention. FIG. 19 is a schematic cross-sectional view of the sub-tray of the wafer carrying device according to the seventh preferred embodiment of the present invention.

1:晶圓承載裝置 10:晶圓承載盤 12:主盤 122:第一上表面 14:容槽 142:槽壁 144:上開口 20:抵肩部 22:子盤 222:承載槽 24:主體部 26:周緣部 262:第二上表面 1: Wafer carrying device 10:Wafer carrier 12: Main disk 122:First upper surface 14: Container 142:Trough wall 144:Open the top 20: Shoulder 22:Sub plate 222: Bearing tank 24:Main part 26: Peripheral part 262:Second upper surface

Claims (11)

一種晶圓承載裝置,包含:一晶圓承載盤,包括一主盤與複數個子盤,其中:該主盤具有一第一上表面、一第一下表面與複數個容槽,各該容槽於該第一上表面形成有一上開口;各該子盤具有一承載槽,該承載槽供放置晶圓,各該子盤自各該上開口置入各該容槽中;其中,各該容槽的槽壁為封閉狀;其中,各該容槽具有一主槽段與一次槽段,該次槽段位於該主槽段的上方且具有該上開口,且於該次槽段與該主槽段之間具有一抵肩部;各該子盤具有一主體部與一周緣部,其中,該主體部具有該承載槽,該周緣部連接於該主體部的徑向外圍;其中,各該子盤置入各該容槽後,各該子盤的主體部位於各該容槽的主槽段中,各該周緣部位於各該次槽段且各該周緣部的底部抵於各該抵肩部。 A wafer carrying device includes: a wafer carrying tray, including a main tray and a plurality of sub- trays, wherein: the main tray has a first upper surface, a first lower surface and a plurality of accommodating grooves, each of the accommodating grooves An upper opening is formed on the first upper surface; each sub-tray has a carrying slot for placing wafers, and each sub-tray is placed into each of the receiving slots from the upper opening; wherein, each of the receiving slots The tank wall is closed; wherein, each tank has a main tank section and a primary tank section, the secondary tank section is located above the main tank section and has the upper opening, and between the secondary tank section and the main tank section There is a shoulder portion between the segments; each sub-disk has a main body part and a peripheral part, wherein the main body part has the bearing groove, and the peripheral part is connected to the radial periphery of the main body part; wherein, each sub-disk After the disk is placed in each of the receptacles, the main body of each sub-disk is located in the main groove section of each receptacle, each of the peripheral portions is located in each of the secondary groove sections, and the bottom of each of the peripheral portions is against each of the shoulders. department. 如請求項1所述之晶圓承載裝置,其中各該子盤的該周緣部環繞該主體部。 The wafer carrying device as claimed in claim 1, wherein the peripheral portion of each sub-disk surrounds the main body portion. 如請求項1所述之晶圓承載裝置,其中該主盤與該些子盤為相同材質。 The wafer carrying device of claim 1, wherein the main disk and the sub-disks are made of the same material. 如請求項1所述之晶圓承載裝置,其中各該子盤的周緣部具有一第二上表面,各該子盤置入各該容槽後,各該第二上表面的位置不高於該第一上表面的位置。 The wafer carrying device according to claim 1, wherein the peripheral portion of each sub-disk has a second upper surface. After each sub-disk is placed in each of the receiving slots, the position of each second upper surface is no higher than the position of the first upper surface. 一種晶圓承載裝置,包含:一晶圓承載盤,包括一主盤與複數個子盤,其中: 該主盤具有一第一上表面、一第一下表面與複數個容槽,各該容槽於該第一上表面形成有一上開口;各該子盤具有一承載槽,該承載槽供放置晶圓,各該子盤自各該上開口置入各該容槽中;其中,各該容槽具有一主槽段與一次槽段,該次槽段位於該主槽段的上方且具有該上開口,且於該次槽段與該主槽段之間具有一抵肩部;各該子盤具有一主體部與一周緣部,其中,該主體部具有該承載槽,該周緣部連接於該主體部的徑向外圍;其中,各該子盤置入各該容槽後,各該子盤的主體部位於各該容槽的主槽段中,各該周緣部位於各該次槽段且各該周緣部的底部抵於各該抵肩部;其中,各該容槽於該第一下表面形成有一下開口;各該子盤的主體部具有一第二下表面,各該第二下表面不突出各該下開口。 A wafer carrying device includes: a wafer carrying tray, including a main tray and a plurality of sub- trays, wherein: The main tray has a first upper surface, a first lower surface and a plurality of receiving slots, each of which is formed with an upper opening on the first upper surface; each of the sub-disks has a bearing slot for placement. Wafers are placed into each sub-trough from the upper opening; wherein each container has a main tank section and a primary tank section, and the secondary tank section is located above the main tank section and has the upper tank section. opening, and has a shoulder portion between the secondary groove section and the main groove section; each sub-disk has a main body part and a peripheral part, wherein the main body part has the load-bearing groove, and the peripheral part is connected to the The radial periphery of the main body portion; wherein, after each sub-disk is placed in each of the receiving grooves, the main body portion of each sub-disk is located in the main groove section of each receiving groove, and each peripheral portion is located in each secondary groove section and The bottom of each peripheral portion abuts each shoulder portion; wherein each receiving groove is formed with a lower opening on the first lower surface; the main body portion of each sub-disk has a second lower surface, and each second lower surface The surface should not protrude from each opening. 如請求項5所述之晶圓承載裝置,包含一移除治具,該移除治具有複數個凸塊,且該些凸塊分別對應該些下開口;該晶圓承載盤置於該移除治具上,且該些凸塊分別抵於該些子盤的主體部的第二下表面,將各該子盤的至少一部分推出各該容槽的上開口。 The wafer carrying device as claimed in claim 5 includes a removal jig, the removal jig has a plurality of bumps, and the bumps respectively correspond to the lower openings; the wafer carrier is placed on the transfer jig. In addition to the fixture, and the bumps are respectively against the second lower surface of the main body of the sub-disks, at least a part of each sub-disk is pushed out of the upper opening of each of the grooves. 一種晶圓承載裝置,包含:一晶圓承載盤,包括一主盤與複數個子盤,其中:該主盤具有一第一上表面、一第一下表面與複數個容槽,各該容槽於該第一上表面形成有一上開口;各該子盤具有一承載槽,該承載槽供放置晶圓,各該子盤自各該上開口置入各該容槽中;其中,各該容槽具有一主槽段與一次槽段,該次槽段位於該主槽段的上方且具有該上開口,且於該次槽段與該主槽段之間具有一抵肩部; 各該子盤具有一主體部與一周緣部,其中,該主體部具有該承載槽,該周緣部連接於該主體部的徑向外圍;其中,各該子盤置入各該容槽後,各該子盤的主體部位於各該容槽的主槽段中,各該周緣部位於各該次槽段且各該周緣部的底部抵於各該抵肩部;其中,各該子盤係由至少二個盤體以可分離的方式拚接而成,各該盤體分別具有該主體部的一部分以及該周緣部的一部分。 A wafer carrying device includes: a wafer carrying tray, including a main tray and a plurality of sub- trays, wherein: the main tray has a first upper surface, a first lower surface and a plurality of accommodating grooves, each of the accommodating grooves An upper opening is formed on the first upper surface; each sub-tray has a carrying slot for placing wafers, and each sub-tray is placed into each of the receiving slots from the upper opening; wherein, each of the receiving slots It has a main groove section and a primary groove section, the secondary groove section is located above the main groove section and has the upper opening, and there is a shoulder between the secondary groove section and the primary groove section; Each sub-disk has a main body part and a peripheral part, wherein the main body part has the bearing groove, and the peripheral part is connected to the radial periphery of the main body part; wherein, after each sub-disk is placed in each of the receiving grooves, The main body part of each sub-disk is located in the main groove section of each accommodation groove, each peripheral part is located in each secondary groove section, and the bottom of each peripheral part is against each shoulder part; wherein, each sub-disk is It is composed of at least two disks that are detachably spliced together, and each disk has a part of the main body part and a part of the peripheral part respectively. 如請求項7所述之晶圓承載裝置,其中各該子盤的該至少二盤體分別具有相面對的一第一接部與一第二接部,該第一接部與該第二接部之間形成至少一接縫,該至少一接縫的一部分位於該主體部的底部。 The wafer carrying device of claim 7, wherein the at least two disk bodies of each sub-disk respectively have a first connecting part and a second connecting part facing each other, and the first connecting part and the second connecting part At least one seam is formed between the joint parts, and a part of the at least one seam is located at the bottom of the main body part. 如請求項8所述之晶圓承載裝置,其中各該子盤的該第一接部於該主體部的底部具有一第一接面,該第二接部於該主體部的底部具有一第二接面;該第一接面與該第二接面分別為斜面。 The wafer carrying device of claim 8, wherein the first connecting portion of each sub-disk has a first connecting surface at the bottom of the main body, and the second connecting portion has a first connecting portion at the bottom of the main body. Two joint surfaces; the first joint surface and the second joint surface are respectively inclined surfaces. 如請求項9所述之晶圓承載裝置,其中具有該第一接面的盤體具有一下表面,該下表面與該第一接面的夾角介於30~60度或介於120~150度。 The wafer carrying device of claim 9, wherein the disk with the first interface has a lower surface, and an angle between the lower surface and the first interface is between 30 and 60 degrees or between 120 and 150 degrees. . 如請求項8所述之晶圓承載裝置,其中該至少二盤體包括一第一盤體與一第二盤體,該第一盤體具有一第一壁面與一第一槽面,該第二盤體具有一第二壁面與一第二槽面,該第一壁面與該第二壁面構成該承載槽的槽壁,該第一槽面與該第二槽面構成該承載槽的槽面;沿著該承載槽的槽面的一軸向上,該第一槽壁與該第二槽壁之間具有一最大距離,且於該軸向上,該第二槽壁至該第二接面的頂部之間具有一長度,該長度為不大於該最大距離的四分之一。 The wafer carrying device according to claim 8, wherein the at least two disks include a first disk and a second disk, the first disk has a first wall surface and a first groove surface, and the third disk body has a first wall surface and a first groove surface. The two disks have a second wall surface and a second groove surface. The first wall surface and the second wall surface constitute the groove wall of the bearing groove. The first groove surface and the second groove surface constitute the groove surface of the bearing groove. ; Along an axial direction of the groove surface of the load-bearing groove, there is a maximum distance between the first groove wall and the second groove wall, and in the axial direction, the second groove wall to the top of the second interface There is a length between them, the length being no more than one quarter of the maximum distance.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM496228U (en) * 2014-10-28 2015-02-21 Advanced System Technology Co Ltd Wafer tray structure
US20150251228A1 (en) * 2012-11-14 2015-09-10 Samsung Electronics Co., Ltd. Wafer holder cleaning apparatus and film deposition system including the same
TW201824435A (en) * 2016-12-16 2018-07-01 台灣積體電路製造股份有限公司 Wafer susceptor device and semiconductor apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150251228A1 (en) * 2012-11-14 2015-09-10 Samsung Electronics Co., Ltd. Wafer holder cleaning apparatus and film deposition system including the same
TWM496228U (en) * 2014-10-28 2015-02-21 Advanced System Technology Co Ltd Wafer tray structure
TW201824435A (en) * 2016-12-16 2018-07-01 台灣積體電路製造股份有限公司 Wafer susceptor device and semiconductor apparatus

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