TWI824437B - Wafer carrying device - Google Patents
Wafer carrying device Download PDFInfo
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- TWI824437B TWI824437B TW111109215A TW111109215A TWI824437B TW I824437 B TWI824437 B TW I824437B TW 111109215 A TW111109215 A TW 111109215A TW 111109215 A TW111109215 A TW 111109215A TW I824437 B TWI824437 B TW I824437B
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- 235000012431 wafers Nutrition 0.000 claims description 97
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 5
- 230000004308 accommodation Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明係與化學氣相沉積設備有關;特別是指一種用於化學氣相沉積設備的晶圓承載裝置。The present invention relates to chemical vapor deposition equipment; in particular, it refers to a wafer carrying device for chemical vapor deposition equipment.
圖1所示為習用的晶圓承載盤100,其具有複數承載槽100a,該些承載槽100a供放置晶圓102,之後將晶圓承載盤100置入化學氣相沉積設備的製程腔室中,以在晶圓102的上表面沉積沉積層。由於成長沉積層時,製程腔室係處於高溫狀態,承載槽100a中於前一輪製程所殘留的物質容易自晶圓102的下表面擴散進入晶圓102中,特別是前一輪製程的沉積層材質與當次製程的沉積層材質不同時,將會對晶圓102造成嚴重的污染。是以,經常需要清潔晶圓承載盤100才能改善污染的情況。Figure 1 shows a
然而,晶圓承載盤100重量重,人員不易拿取,造成清潔的不便。另外,為了維持產量,在清潔晶圓承載盤100時,必需有另外的晶圓承載盤100替換使用。惟,晶圓承載盤100的造價高,多個晶圓承載盤100勢必增加維護的成本。However, the
有鑑於此,本發明之目的在於提供一種晶圓承載裝置,具有可分離的主盤與子盤,可易於清潔。In view of this, an object of the present invention is to provide a wafer carrying device with a separable main tray and a sub-tray that can be easily cleaned.
本發明之另一目的在於提供一種晶圓承載裝置,可以減少維護成本。Another object of the present invention is to provide a wafer carrying device that can reduce maintenance costs.
緣以達成上述目的,本發明提供的一種晶圓承載裝置包含一晶圓承載盤,該晶圓承載盤包括一主盤與複數個子盤,其中,該主盤具有一第一上表面、一第一下表面與複數個容槽,各該容槽於該第一上表面形成有一上開口;各該子盤具有一承載槽,該承載槽供放置晶圓,各該子盤自各該上開口置入各該容槽中。In order to achieve the above object, the present invention provides a wafer carrying device including a wafer carrying tray. The wafer carrying tray includes a main tray and a plurality of sub- trays, wherein the main tray has a first upper surface, a first A lower surface and a plurality of receiving slots, each receiving slot is formed with an upper opening on the first upper surface; each sub-tray has a carrying slot for placing wafers, and each sub-tray is placed from its upper opening. into the respective slots.
本發明之效果在於藉由可分離的主盤與子盤的設計,子盤重量較輕,體積較小,易於清潔,且可以減少主盤清潔的頻率。子盤體積小製作成本低,特定的子盤可以專用於特定成分的沉積層的製程中。藉此,可以減少維護成本。The effect of the present invention is that through the design of the separable main disk and the sub-disk, the sub-disk is lighter in weight, smaller in size, easy to clean, and can reduce the frequency of cleaning the main disk. The sub-disk is small in size and low in production cost, and a specific sub-disk can be used exclusively in the process of depositing a layer with a specific composition. In this way, maintenance costs can be reduced.
為能更清楚地說明本發明,茲舉較佳實施例並配合圖式詳細說明如後。請參圖2至圖5所示,為本發明第一較佳實施例之晶圓承載裝置1,包含一晶圓承載盤10,該晶圓承載盤10用以供置入化學氣相沉積設備的製程腔室,例如是有機金屬化學氣相沉積設備。In order to illustrate the present invention more clearly, the preferred embodiments are described in detail below along with the drawings. Please refer to FIGS. 2 to 5 , which is a wafer carrying device 1 according to a first preferred embodiment of the present invention. It includes a
該晶圓承載盤10包括一主盤12與複數個子盤22,其中,該主盤12具有相背對的一第一上表面122與一第一下表面124,且自該第一上表面122凹入形成有複數個容槽14,各該容槽14於該第一上表面122形成有一上開口144。於本實施例中,主盤12係由石墨材質所製成,且各該容槽14的形狀為圓形槽,且容槽14周圍的槽壁142為封閉狀。該些容槽14結構相同,於後以一個容槽14為例說明,該容槽14具有一主槽段16與一次槽段18,該次槽段18位於該主槽段16的上方且具有該上開口144。該次槽段18的槽寬大於該主槽段16的槽寬,且於該次槽段18與該主槽段16之間具有一抵肩部20,該抵肩部20係朝向該上開口144。The
各該子盤22可分離地自各置於各該容槽14的上開口144置入各該容槽14中。於本實施例中,各該子盤22的材質與主盤12相同且形狀為圓形盤體。該些子盤22結構相同,於後以一個子盤22為例說明。Each
該子盤22具有一承載槽222,該承載槽222係由子盤22頂部凹入形成。該子盤22具有一主體部24與一周緣部26,該主體部24具有該承載槽222,該周緣部26一體連接於該主體部24的徑向外圍且環繞該主體部24。該周緣部26的頂面定義為一第二上表面262。該主體部24的底面定義為一第二下表面242。The
當該子盤22置入對應的容槽14後,該子盤22的主體部24位於該容槽14的主槽段16中,該周緣部26位於該次槽段18且該周緣部26的底部抵於該抵肩部20,並且該第二上表面262的位置不高於該第一上表面122的位置。於本實施例中,該第二上表面262與該第一上表面122實質上齊平,該第二下表面242面向該容槽14的槽底。When the
藉由上述結構,將晶圓W置於子盤22的承載槽222後,即可將整個晶圓承載盤10置入化學氣相沉積設備的製程腔室中,以在晶圓W上成長沉積層(例如是磊晶層)。由於該第二上表面262不高於該第一上表面122,因此,該晶圓承載盤10置放於製程腔室時,較不易影響製程氣體的流動,讓製程氣體可以穩定在晶圓W表面反應產生沉積層。在沉積製程結束後,即可將該晶圓承載盤10自製程腔室取出,並將晶圓W自子盤22的承載槽取出。With the above structure, after the wafer W is placed in the
由於晶圓W只和子盤22接觸,只要再將原有的子盤22自主盤12的容槽14取下,再換上乾淨的子盤22,即可再用於新一輪的沉積製程中。較佳者,子盤22的數量多於主盤12之容槽14的數量,例如子盤22的數量為容槽14數量的二倍以上。Since the wafer W is only in contact with the
子盤22重量較輕,體積較小,可易於清潔。亦可對特定成分的沉積層綁定特定的子盤22,即可避免不同成分的沉積層交叉污染晶圓W的情形。由於主盤12不接觸晶圓,因此主盤12不需時常更換或清潔。The
圖6至圖7所示為本發明第二較佳實施例之晶圓承載裝置2,其具有大致相同於第一實施例之結構,不同的是,主盤30的各容槽304於底部的第一下表面302形成有一下開口304a。當各子盤22置入對應的容槽304後,各子盤22的主體部24之第二下表面242不突出各容槽304的下開口304a。藉此,當晶圓承載盤28置於一平面時,主盤30的第一下表面302可抵在該平面上,且該平面不會將子盤22往上頂起。欲將子盤22自主盤30上取下時,可自主盤30底部的下開口304a將子盤22往上頂,即可讓子盤22突出上開口304b以脫離主盤30。6 to 7 show the wafer carrying
圖8所示為本發明第三較佳實施例之晶圓承載裝置3,其係以第二實施例為基礎,更包含一移除治具32,該移除治具有複數個凸塊322,該些凸塊322分別位於對應該些下開口304a的位置。圖8中顯示一個凸塊322。該晶圓承載盤28置於該移除治具32上時,該些凸塊322分別抵於該些子盤22的主體部24的第二下表面242,且各該凸塊322向上將各該子盤22的至少一部分往上推出各該容槽304的上開口304b,藉此,讓該些子盤22可同與主盤30分離,便於取下該些子盤22。Figure 8 shows a wafer carrying
圖9至圖12所示為本發明第四較佳實施例之晶圓承載裝置的子盤34,該子盤34具有大致相同於第一實施例的結構,不同的是,該子盤34係由至少二個盤體以可分離的方式拚接而,而具有一個接縫342,其它子盤34的結構相同,不再贅述。實務上,該子盤34亦可由三個以上的盤體拚接而成,而具有多個接縫。9 to 12 show the sub-tray 34 of the wafer carrying device according to the fourth preferred embodiment of the present invention. The sub-tray 34 has a structure that is substantially the same as that of the first embodiment. The difference is that the sub-tray 34 is It is composed of at least two disks that are detachably spliced together and has a
該兩個盤體分別為一第一盤體40與一第二盤體50,各該盤體分別具有該主體部36的一部分以及該周緣部38的一部分。該第一盤體40具有一第一壁面42與一第一槽面44與一側向槽48,該側向槽48的槽壁形成一第一接部482。該第二盤體50具有一第二壁面52與一第二槽面54,且第二盤體50的三個側面形成一第二接部56。該第二接部56與該第一接部482相互補。第二盤體50可以與該第一盤體40的側向槽48結合或分離(圖9、圖11參照),且該第一接部482與該第二接部56拚接而於彼此之間形成接縫342,該第一壁面42與該第二壁面52構成承載槽344的槽壁,該第一槽面44與該第二槽面54構成該承載槽344的槽面。該接縫342在主體部36與周緣部38之間延伸,且該接縫342的一部分位於該主體部36的底部且位於承載槽344的下方。The two disks are a
請配合圖12,沿著平行於該承載槽344的槽面的一軸向X上,該第一壁面42與該第二壁面52之間具有一最大距離L1,本實施例中,該最大距離L1為承載槽344的於徑向上的槽寬。於該軸向X上,該第二壁面52至該第二接面562的頂部之間具有一長度L2,該長度L2不大於該最大距離L1的四分之一。於本實施例中,該長度L2為該承載槽344的該最大距離L1的四分之一。由於長度L2不大於最大距離L1的四分之一,因此,晶圓W有較大的面積與第一盤體40接觸,當兩個盤體分離時,第一盤體40仍可穩定地托住晶圓W。當晶圓W置承載槽344中時,晶圓W遮蓋位於承載槽344下方的接縫342上,減少承載槽344下方的接縫342直接暴露於外的面積,以減少製程氣體進入承載槽344下方的接縫342。Please refer to Figure 12, along an axis X parallel to the groove surface of the bearing
另外,該第一盤體40的第一接部482具有一第一接面482a,該第一接面482a為斜面且位於該主體部36的底部而位於承載槽344下方。該第一盤體40的下表面46與該第一接面482a的夾角θ介於30~60度,於本實施例中,夾角θ以35度為例,在一實施例中,夾角θ亦可為40或45度。該第二盤體50具有一第二接面562,該第二接面562為斜面且位於該主體部36的底部而位於承載槽344下方,該第二接面562與該第一接面482a相接觸。In addition, the first connecting
當兩個盤體分離時,可將一吸取器(圖未示)沿著第一接面482a向上移動,插入晶圓W與第一盤體40的第一槽面44之間,讓吸取器吸住晶圓W的底部,以取下晶圓W。此外,亦可如圖13所示,將第二盤體50向上提起,即可讓第二盤體50同時將晶圓W往上頂起,更利於拿取晶圓W。When the two disks are separated, a suction device (not shown) can be moved upward along the
圖14所示為本發明第五較佳實施例之晶圓承載裝置的子盤58,該子盤58具有大致相同於第四實施例的結構,不同的是,該第一盤體60的下表面602與該第一接面604的夾角θ介於120~150度,於本實施例中,夾角以145度為例,在一實施例中,夾角θ亦可為140或135度。Figure 14 shows the sub-tray 58 of the wafer carrying device according to the fifth preferred embodiment of the present invention. The sub-tray 58 has a structure that is substantially the same as that of the fourth embodiment. The difference is that the lower part of the
圖15至圖17所示為本發明第六較佳實施例之晶圓承載裝置的子盤62,該子盤62具有大致相同於第四實施例的結構,不同的是,第一盤體64具有扇形的側向槽66,第二盤體70呈扇形且與側向槽66相拼接。側向槽66的兩側槽壁662呈傾斜,第一接面662a位於兩槽壁662的連接處。第二盤體70的兩側面的傾斜方向與側向槽66的槽壁662相反,第二接面72位於兩側面的連接處。該第一盤體64的下表面68與該第一接面662a的夾角θ介於30~60度。Figures 15 to 17 show the sub-tray 62 of the wafer carrying device according to the sixth preferred embodiment of the present invention. The sub-tray 62 has substantially the same structure as the fourth embodiment, except that the
圖18與圖19所示為本發明第七較佳實施例之晶圓承載裝置的子盤74,該子盤74具有大致相同於第六實施例的結構,不同的是,第一盤體76的側向槽78的槽壁傾斜的方向及第二盤體82的兩側面822的傾斜方向與第六實施例相反,第二接面822a位於兩側面的連接處。該第一盤體76的下表面80與該第一接面782的夾角θ介於120~150度。Figures 18 and 19 show the sub-tray 74 of the wafer carrying device according to the seventh preferred embodiment of the present invention. The sub-tray 74 has a structure that is substantially the same as that of the sixth embodiment. The difference is that the
上述第四至第七實施例的子盤皆可應用於第一至第三實施例中。The sub-disks of the fourth to seventh embodiments described above can be applied to the first to third embodiments.
據上所述,本發明之晶圓承載裝置之晶圓承載盤具有可分離的主盤與子盤,可便於清潔子盤,且可以減少主盤清潔或更換的頻率。子盤體積小製作成本低,可備大量的子盤替換使用,特定的子盤可專用於特定成分的沉積層的製程中。相較於習用的晶圓承載盤,可有效減少維護成本。According to the above, the wafer carrying tray of the wafer carrying device of the present invention has a separable main tray and a sub-tray, which can facilitate cleaning of the sub-tray and reduce the frequency of cleaning or replacement of the main tray. The sub-disks are small in size and low in production cost, and a large number of sub-disks can be prepared for replacement. A specific sub-disk can be used exclusively in the process of depositing layers of specific compositions. Compared with conventional wafer carrying trays, maintenance costs can be effectively reduced.
以上所述僅為本發明較佳可行實施例而已,舉凡應用本發明說明書及申請專利範圍所為之等效變化,理應包含在本發明之專利範圍內。The above are only the best possible embodiments of the present invention. Any equivalent changes made by applying the description and patent scope of the present invention should be included in the patent scope of the present invention.
[習用] 100:晶圓承載盤 100a:承載槽 102:晶圓 [本發明] 1:晶圓承載裝置 10:晶圓承載盤 12:主盤 122:第一上表面 124:第一下表面 14:容槽 142:槽壁 144:上開口 16:主槽段 18:次槽段 20:抵肩部 22:子盤 222:承載槽 24:主體部 242:第二下表面 26:周緣部 262:第二上表面 2:晶圓承載裝置 28:晶圓承載盤 30:主盤 302:第一下表面 304:容槽 304a:下開口 304b:上開口 3:晶圓承載裝置 32:移除治具 322:凸塊 34:子盤 342:接縫 344:承載槽 36:主體部 38:周緣部 40:第一盤體 42:第一壁面 44:第一槽面 46:下表面 48:側向槽 482:第一接部 482a:第一接面 50:第二盤體 52:第二壁面 54:第二槽面 56:第二接部 562:第二接面 58子盤 60第一盤體 602下表面 604第一接面 62子盤 64第一盤體 66側向槽 662槽壁 662a第一接面 68下表面 70第二盤體 72第二接面 74子盤 76第一盤體 78側向槽 782第一接面 80下表面 82第二盤體 822側面 822a第二接面 L1:最大距離 L2:長度 W:晶圓 X:軸向 θ:夾角 [common usage] 100:Wafer carrier 100a: Bearing tank 102:wafer [Invention] 1: Wafer carrying device 10:Wafer carrier 12: Main disk 122:First upper surface 124:First lower surface 14: Container 142:Trough wall 144:Open the top 16: Main groove section 18: Secondary slot section 20: Shoulder 22:Sub plate 222: Bearing tank 24:Main part 242: Second lower surface 26: Peripheral part 262:Second upper surface 2: Wafer carrying device 28:Wafer carrier 30: Main disk 302: First lower surface 304:Tank 304a: Lower opening 304b: Upper opening 3: Wafer carrying device 32:Remove fixture 322: Bump 34: Subplate 342:Seam 344: Bearing tank 36:Main part 38: Peripheral part 40:The first plate 42:First wall 44:First groove surface 46: Lower surface 48: Lateral groove 482:First connection 482a: First interface 50:Second plate body 52:Second wall 54:Second groove surface 56:Second connection 562:Second interface 58 sub-disks 60 first plate 602 lower surface 604 first interface 62 sub-disks 64 first plate 66 lateral slots 662 tank wall 662a first junction 68 lower surface 70 second plate body 72 second interface 74 sub-plates 76 first plate 78 lateral slot 782 first interface 80 lower surface 82 second plate body 822 side 822a second junction L1: Maximum distance L2: length W:wafer X:Axis θ: included angle
圖1為習用的晶圓承載盤之立體圖。 圖2為本發明第一較佳實施例之晶圓承載裝置的立體圖。 圖3為本發明第一較佳實施例之晶圓承載裝盤的俯視圖。 圖4為圖3之4-4方向剖視圖。 圖5為本發明第一較佳實施例之晶圓承載裝盤的分解剖視示意圖。 圖6為本發明第二較佳實施例之晶圓承載裝置的立體圖。 圖7為本發明第二較佳實施例之晶圓承載裝盤的剖視示意圖。 圖8為本發明第三較佳實施例之晶圓承載裝置的剖視示意圖。 圖9為本發明第四較佳實施例之晶圓承載裝置的子盤的立體圖。 圖10為本發明第四較佳實施例之晶圓承載裝置的子盤的俯視圖。 圖11為本發明第四較佳實施例之晶圓承載裝置的子盤的分解立體圖。 圖12為圖10之12-12方向剖視圖。 圖13為本發明第四較佳實施例之子盤分離的示意圖。 圖14為本發明第五較佳實施例之晶圓承載裝置的子盤的剖視示意圖。 圖15為本發明第六較佳實施例之晶圓承載裝置的子盤的俯視圖。 圖16為本發明第六較佳實施例之晶圓承載裝置的子盤的分解示意圖。 圖17為本發明第六較佳實施例之晶圓承載裝置的子盤的剖視示意圖。 圖18為本發明第七較佳實施例之晶圓承載裝置的子盤的分解示意圖。 圖19為本發明第七較佳實施例之晶圓承載裝置的子盤的剖視示意圖。 Figure 1 is a perspective view of a conventional wafer carrier. FIG. 2 is a perspective view of the wafer carrying device according to the first preferred embodiment of the present invention. FIG. 3 is a top view of the wafer loading tray according to the first preferred embodiment of the present invention. Figure 4 is a cross-sectional view along the direction 4-4 of Figure 3 . FIG. 5 is an exploded schematic diagram of a wafer loading tray according to the first preferred embodiment of the present invention. FIG. 6 is a perspective view of the wafer carrying device according to the second preferred embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a wafer loading tray according to the second preferred embodiment of the present invention. FIG. 8 is a schematic cross-sectional view of the wafer carrying device according to the third preferred embodiment of the present invention. FIG. 9 is a perspective view of the sub-tray of the wafer carrying device according to the fourth preferred embodiment of the present invention. FIG. 10 is a top view of the sub-tray of the wafer carrying device according to the fourth preferred embodiment of the present invention. FIG. 11 is an exploded perspective view of the sub-tray of the wafer carrying device according to the fourth preferred embodiment of the present invention. Figure 12 is a cross-sectional view along the direction 12-12 of Figure 10 . Figure 13 is a schematic diagram of the daughter disk separation according to the fourth preferred embodiment of the present invention. 14 is a schematic cross-sectional view of the sub-tray of the wafer carrying device according to the fifth preferred embodiment of the present invention. FIG. 15 is a top view of the sub-tray of the wafer carrying device according to the sixth preferred embodiment of the present invention. FIG. 16 is an exploded schematic view of the sub-tray of the wafer carrying device according to the sixth preferred embodiment of the present invention. FIG. 17 is a schematic cross-sectional view of the sub-tray of the wafer carrying device according to the sixth preferred embodiment of the present invention. FIG. 18 is an exploded schematic view of the sub-tray of the wafer carrying device according to the seventh preferred embodiment of the present invention. FIG. 19 is a schematic cross-sectional view of the sub-tray of the wafer carrying device according to the seventh preferred embodiment of the present invention.
1:晶圓承載裝置 10:晶圓承載盤 12:主盤 122:第一上表面 14:容槽 142:槽壁 144:上開口 20:抵肩部 22:子盤 222:承載槽 24:主體部 26:周緣部 262:第二上表面 1: Wafer carrying device 10:Wafer carrier 12: Main disk 122:First upper surface 14: Container 142:Trough wall 144:Open the top 20: Shoulder 22:Sub plate 222: Bearing tank 24:Main part 26: Peripheral part 262:Second upper surface
Claims (11)
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TWM496228U (en) * | 2014-10-28 | 2015-02-21 | Advanced System Technology Co Ltd | Wafer tray structure |
US20150251228A1 (en) * | 2012-11-14 | 2015-09-10 | Samsung Electronics Co., Ltd. | Wafer holder cleaning apparatus and film deposition system including the same |
TW201824435A (en) * | 2016-12-16 | 2018-07-01 | 台灣積體電路製造股份有限公司 | Wafer susceptor device and semiconductor apparatus |
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- 2022-09-23 CN CN202211168150.4A patent/CN116791066A/en active Pending
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Publication number | Priority date | Publication date | Assignee | Title |
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US20150251228A1 (en) * | 2012-11-14 | 2015-09-10 | Samsung Electronics Co., Ltd. | Wafer holder cleaning apparatus and film deposition system including the same |
TWM496228U (en) * | 2014-10-28 | 2015-02-21 | Advanced System Technology Co Ltd | Wafer tray structure |
TW201824435A (en) * | 2016-12-16 | 2018-07-01 | 台灣積體電路製造股份有限公司 | Wafer susceptor device and semiconductor apparatus |
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