TWI823479B - Thin-film chip resistor-capacitor and method of fabricating the same - Google Patents

Abstract

A thin-film chip resistor-capacitor includes a substrate, a resistor layer, a dielectric layer, a thin-film capacitor layer, a first terminal electrode and a second terminal electrode. The resistor layer is disposed on the substrate. The dielectric layer is disposed on the resistor layer. The thin-film capacitor layer is disposed on the dielectric layer and includes first and second capacitor electrodes that are physically separated with respect to each other. The first terminal electrode is disposed on a first side edge of the substrate and is coupled to the resistor layer and the first capacitor electrode. The second terminal electrode is disposed on a second side edge of the substrate opposite to the first side edge and is coupled to the resistor layer and the second capacitor electrode.

Description

Thin film chip resistor and capacitor and manufacturing method thereof

The present invention relates to a resistor and capacitor element, and in particular to a thin film chip resistor and capacitor and a manufacturing method thereof.

Common resistive and capacitive components are achieved by using resistors and capacitors in series or parallel designs, or by forming resistive and capacitive coupling devices through a low-temperature ceramic co-firing process. In the design of conventional resistor and capacitor components, in order to achieve circuit miniaturization, the size design space of resistors and capacitors is usually greatly restricted, making it difficult to achieve high resistance and capacitance values, and also causing failure due to the small size. The power resistance and heat dissipation effect are reduced. On the other hand, the low-temperature ceramic co-firing process is easily affected by the thermophysical properties of the respective components during co-firing, resulting in poor production quality.

The present invention proposes a thin film chip resistor and capacitor and a manufacturing method thereof. The resistor and capacitor element is formed by forming an additional thin film capacitor layer on top of the resistor layer or substrate, and coupling the resistor layer and the thin film capacitor layer through terminal electrodes. Effects such as chip thinning and miniaturization can be achieved simultaneously without sacrificing resistance and capacitance values.

One aspect of the present invention refers to a thin film chip resistor capacitor, which includes a substrate, a resistive layer, a first dielectric layer, a first thin film capacitor layer, a first terminal electrode and a second terminal electrode. The resistance layer is arranged on the base material. The first dielectric layer is disposed on the resistive layer. The first thin film capacitor layer is disposed on the first dielectric layer and includes a first capacitor electrode and a second capacitor electrode that are physically separated from each other. The first terminal electrode is disposed on the first side of the substrate and couples the resistive layer and the first capacitive electrode. The second terminal electrode is disposed on the second side of the substrate relative to the first side and is coupled to the resistance layer and the second capacitance electrode.

According to one or more embodiments of the present invention, the first capacitor electrode and the second capacitor electrode are comb-shaped electrodes, and the electrode branches of the first capacitor electrode and the electrode branches of the second capacitor electrode are alternately arranged.

According to one or more embodiments of the present invention, the thin film chip resistor capacitor further includes a second dielectric layer disposed on the first thin film capacitor layer and covering the electrode branches of the first capacitor electrode and the second capacitor electrode. Electrode branches.

According to one or more embodiments of the present invention, the thin film chip resistor capacitor further includes a second thin film capacitor layer, which is disposed on the other side of the base material relative to the resistive layer, and includes a second thin film capacitor layer that is physically separated from each other and The third capacitor electrode and the fourth capacitor electrode are respectively coupled to the first terminal electrode and the second terminal electrode.

According to one or more embodiments of the present invention, the third capacitor electrode and the fourth capacitor electrode are comb-shaped electrodes, and the third capacitor electrode The electrode branches and the electrode branches of the fourth capacitor electrode are arranged alternately.

According to one or more embodiments of the present invention, the thin film chip resistor capacitor further includes a third dielectric layer disposed on the second thin film capacitor layer and covering the electrode branches of the third capacitor electrode and the fourth capacitor electrode. Electrode branches.

Another aspect of the present invention refers to a method for manufacturing thin film chip resistors and capacitors, which includes: providing a base material; forming a resistance layer on the base material; forming a first dielectric layer on the resistance layer; forming a first dielectric layer on the first dielectric layer. Thin film capacitor layer, this first thin film capacitor layer includes a first capacitor electrode and a second capacitor electrode that are physically separated from each other; a first terminal electrode coupling the resistance layer and the first capacitor electrode is formed on the first side of the substrate ; And forming a second terminal electrode coupling the resistive layer and the second capacitive electrode on the second side of the substrate relative to the first side.

According to one or more embodiments of the present invention, the above method further includes forming a second dielectric layer on the above-mentioned first thin film capacitor layer, and the second dielectric layer covers the electrode branches of the above-mentioned first capacitor electrode and the above-mentioned second capacitor electrode. Electrode branches.

According to one or more embodiments of the present invention, the above method further includes forming a second thin film capacitor layer on the other side of the above substrate relative to the above resistive layer. The second thin film capacitor layer includes entities that are physically separated from each other and are respectively Third capacitor electrodes and fourth capacitor electrodes coupled to the first terminal electrode and the second terminal electrode.

According to one or more embodiments of the present invention, the above method further includes forming a third dielectric layer on the above second film capacitor layer, and the third dielectric layer covers Cover the electrode branches of the above-mentioned third capacitor electrode and the electrode branches of the above-mentioned fourth capacitor electrode.

100:Thin film chip resistor and capacitor

102:Substrate

104:Resistance layer

106A, 106B: Lower electrode

108: First dielectric layer

110A, 110B: terminal electrode

112A, 112B: first upper electrode

114: Second dielectric layer

116A1, 116B1: second upper electrode

116A2, 116B2: Electrode branch

118:Protective layer

122A, 122B: Side electrode

200: Thin film chip resistors and capacitors

202:Substrate

204:Resistance layer

206A1, 206B1: lower electrode

206A2, 206B2: Lower electrode branch

208: First dielectric layer

210A, 210B: terminal electrode

212A, 212B: first upper electrode

214: Second dielectric layer

216A1, 216B1: second upper electrode

216A2, 216B2: Upper electrode branch

218:Protective layer

222A, 222B: Side electrode

224:Third dielectric layer

C, C1, C2: capacitor

CA, CB: capacitive electrode

CAa,CBa:electrode branches

R: Resistor

T1: first end

T2: Second end

For a more complete understanding of the embodiments and their advantages, reference is now made to the following description in conjunction with the accompanying drawings, wherein: [Fig. 1] is a cross-sectional view of a thin film chip resistor and capacitor according to an embodiment of the present invention; [Fig. 2] is [Fig. 1] The equivalent circuit diagram of the thin film chip resistor and capacitor; [Fig. 3] is an example of the planar structure of the capacitor of [Fig. 2]; [Fig. 4] is a cross-sectional view of the thin film chip resistor and capacitor according to another embodiment of the present invention; [Fig. 5] is an equivalent circuit diagram of the thin film chip resistor and capacitor of [Fig. 4]; and [Fig. 6A] to [Fig. 6F] are cross-sectional views of each stage of manufacturing the thin film chip resistor and capacitor of [Fig. 4].

Embodiments of the present disclosure are discussed in detail below. It is to be appreciated, however, that the embodiments provide many applicable concepts that can be embodied in a wide variety of specific contexts. The embodiments discussed and disclosed are for illustration only and are not intended to limit the scope of the present disclosure.

The terms used herein are for the purpose of describing specific embodiments only and are not intended to limit the scope of the patent application. Unless otherwise restricted, the singular form "a" or "the" may also be used to denote the plural form.

It will be understood that although terms such as "first", "second"... may be used herein to describe various signals, components and/or parts, these terms should not limit these signals, components and/or parts. or parts. These terms are only used to distinguish one signal, component and/or part from another signal, component and/or part.

The use of spatially relative terms is to describe the different orientations of components during use or operation, and is not limited to the orientation depicted in the drawings. The components may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted in the same manner.

For simplicity and clarity, element symbols and/or letters may be repeated in various embodiments herein, but this does not imply a causal relationship between the various embodiments and/or configurations discussed. Furthermore, in the description of the figures, similar elements may have names and numbers similar to those of previous figures. When subsequent drawings use components with different contexts or different functions, the components may have different high-digit numbers to represent different drawing numbers (for example, 1xx in Figure 1 and 2xx in Figure 4). The specific reference numerals assigned to various components are merely to aid in description and are not intended to imply any structural or functional limitations.

FIG. 1 is a cross-sectional view of a thin film chip resistor and capacitor 100 according to an embodiment of the present invention. The thin film chip resistor capacitor 100 includes a substrate 102, a resistive layer 104, lower electrodes 106A, 106B, a first dielectric layer 108, a first upper electrode 112A, 112B, a second dielectric layer 114, a second upper electrode 116A1, 116B1, and electrode branches. 116A2, 116B2, protective layer 118 and side electrodes 122A, 122B. The substrate 102 may be, for example, an alumina substrate, a ceramic substrate, or other suitable insulating substrate. The resistive layer 104 and the lower electrodes 106A and 106B are respectively disposed on the upper side, lower left side and lower side of the base material 102. On the lower right side, the resistive layer 104 is a thin film alloy foil, which may include, for example, silver-copper alloy, nickel-chromium-copper alloy, nickel-chromium-silicon alloy, manganese-copper alloy, nickel-copper alloy and/or other alloy materials with similar properties, The lower electrodes 106A, 106B may include, for example, copper, silver, and/or other suitable conductive metal materials.

The first dielectric layer 108 and the first upper electrodes 112A and 112B are disposed on the resistive layer 104 . The first dielectric layer 108 may include, for example, resin, epoxy resin, benzocyclobutene (BCB), polytetrafluoroethylene (PTFE), polyimide (PI), tantalum pentoxide ( Ta ₂ O ₅ ), tantalum nitride (TaN), titanium dioxide (TiO ₂ ) or other suitable interface insulating materials. The first upper electrodes 112A and 112B are respectively located on the left and right sides of the first dielectric layer 108 and may include, for example, copper, silver and/or other suitable conductive metal materials.

The second dielectric layer 114, the second upper electrodes 116A1 and 116B1 and the electrode branches 116A2 and 116B2 are disposed on the first dielectric layer 108 and the first upper electrodes 112A and 112B. The second dielectric layer 114 covers the electrode branches 116A2 and 116B2, and may also include, for example, resin, epoxy resin, benzocyclobutene, polytetrafluoroethylene, polyimide, tantalum pentoxide, tantalum nitride, titanium dioxide, or Other suitable interface insulating materials. The second upper electrodes 116A1 and 116B1 are respectively located on the left and right sides of the second dielectric layer 114 and contact the first upper electrodes 112A and 112B respectively. The electrode branches 116A2 and 116B2 are both located between the second upper electrodes 116A1 and 116B1, and are respectively coupled to the second upper electrodes 116A1 and 116B1. In addition, the composition of the second upper electrode 116A1 and the electrode branch 116A2 is the same as that of the second upper electrode 116B1 and the electrode branch. The components of 116B2 are two opposite capacitor electrodes. Since the capacitor electrodes are physically separated, and the second upper electrodes 116A1, 116B1 and electrode branches 116A2, 116B2 have gaps filled by the second dielectric layer 114, the second upper electrode 116A1 and the electrode branches 116A2 can be connected to each other. The second upper electrode 116B1 and the electrode branch 116B2 interact with each other to form a thin film capacitor layer. Likewise, the second upper electrodes 116A1, 116B1 and electrode branches 116A2, 116B2 may also include, for example, copper, silver and/or other suitable conductive metal materials.

The protective layer 118 is disposed on the second dielectric layer 114, the second upper electrodes 116A1, 116B1 and the electrode branches 116A2, 116B2, and covers the second dielectric layer 114 and the electrode branches 116A2, 116B2 to further protect the electrode branches 116A2, 116B2 and Resistor layer 104 and other underlying components. The protective layer 118 may include resin, epoxy, ink, benzocyclobutene, polyimide, solder resist, and/or other suitable materials.

The side electrode 122A extends on the lower electrode 106A, the left side of the substrate 102, the left side of the resistive layer 104, the left side of the first upper electrode 112A and the second upper electrode 116A1, and is coupled to the resistive layer 104 and the second upper electrode 116A1. Electrode 116A1 and electrode branch 116A2. The side electrode 122B extends on the lower electrode 106B, the right side of the substrate 102, the right side of the resistive layer 104, the right side of the first upper electrode 112B and the second upper electrode 116B1, and is coupled to the resistive layer 104 and the second upper electrode 116B1. Electrode 116B1 and electrode branch 116B2. Specifically, one end of the side electrode 122A is disposed on the second upper electrode 116A1 and covers a part of the second upper electrode 116A1 and the protective layer 118, and is sequentially formed along the first upper electrode 112A, the resistive layer 104 and the base layer. The left side of the material 102 extends to the lower electrode 106A, so that the other end covers the lower electrode 106A. Similarly, one end of the side electrode 122B is disposed on the second upper electrode 116B1 and covers a portion of the second upper electrode 116B1 and the protective layer 118 , and is sequentially along the right side of the first upper electrode 112B, the resistive layer 104 and the substrate 102 The side extends to the lower electrode 106B, so that the other end covers the lower electrode 106B. Side electrodes 122A, 122B may also include, for example, copper, silver, and/or other suitable conductive metal materials. In some embodiments, the outer sides of the side electrodes 122A and 122B can be further plated with a metal film layer such as tin or nickel.

In this embodiment, the lower electrode 106A, the first upper electrode 112A, the second upper electrode 116A1 and the side electrode 122A constitute the terminal electrode 110A, and the lower electrode 106B, the first upper electrode 112B, the second upper electrode 116B1 and the side electrode 122B The terminal electrode 110B is formed. The terminal electrodes 110A and 110B are respectively disposed on two opposite sides of the base material 102 and serve as contacts for coupling to external circuits.

The thin film chip resistor capacitor 100 is equivalent to a parallel resistor-capacitor circuit. FIG. 2 is an equivalent circuit diagram of the thin film chip resistor and capacitor 100 in FIG. 1 . The equivalent circuit diagram shown in FIG. 2 includes a resistor R and a capacitor C connected in parallel with each other, and a first terminal T1 and a second terminal T2 respectively coupled to the opposite sides of the resistor R and the capacitor C. The resistor R corresponds to the resistor layer 104 and the capacitor C Corresponding to the second upper electrodes 116A1 and 116B1 and the electrode branches 116A2 and 116B2, the first end T1 and the second end T2 respectively correspond to the terminal electrodes 110A and 110B.

FIG. 3 is an example of the planar structure of the capacitor C in FIG. 2 . The capacitor C includes two opposite capacitor electrodes CA and CB, in which the capacitor electrode CA has There are multiple electrode branches CAa, and the capacitive electrode CB has multiple electrode branches CBa, and the electrode branches CAa and CBa are staggered with each other. The capacitor electrodes CA and CB are both comb-shaped, and the electrode branches CAa and CBa can respectively correspond to the electrode branches 116A2 and 116B2 in Figure 1 . The comb-shaped electrodes shown in Figure 1 and the electrode branches CAa and CBa shown in Figure 3 are only examples, and their numbers can be adjusted according to design requirements.

FIG. 4 is a cross-sectional view of a thin film chip resistor and capacitor 200 according to another embodiment of the present invention. The thin film chip resistor capacitor 200 includes a substrate 202, a resistor layer 204, lower electrodes 206A1, 206B1, lower electrode branches 206A2, 206B2, a first dielectric layer 208, first upper electrodes 212A, 212B, a second dielectric layer 214, a second upper electrode Electrodes 216A1, 216B1, upper electrode branches 216A2, 216B2, protective layer 218, side electrodes 222A, 222B and third dielectric layer 224. Compared with the thin film chip resistor and capacitor 100 of Figure 1, in the thin film chip resistor and capacitor 200 of Figure 4, there are also lower electrode branches 206A2, 206B2 and a third dielectric layer 224 below the base material 202, wherein the lower electrode branches 206A2, 206B2 The lower electrodes 206A1 and 206B1 are respectively coupled, and the third dielectric layer 224 covers the lower electrode branches 206A2 and 206B2. The third dielectric layer 224 may also include, for example, resin, epoxy resin, benzocyclobutene, polytetrafluoroethylene, polyimide, tantalum pentoxide, tantalum nitride, titanium dioxide, or other suitable interface insulating materials. The lower electrode branches 206A2 and 206B2 are both located between the lower electrodes 206A1 and 206B1 and are respectively coupled to the lower electrodes 206A1 and 206B1. In addition, the composition of the lower electrode 206A1 and the lower electrode branch 206A2 and the composition of the lower electrode 206B1 and the lower electrode branch 206B2 are respectively two opposite capacitive electrodes. Because these capacitors The electrodes are physically separated, and the lower electrodes 206A1, 206B1 and the lower electrode branches 206A2, 206B2 have gaps filled by the third dielectric layer 224. Therefore, the lower electrode 206A1 and the lower electrode branch 206A2 can be connected to the lower electrode 206B1 and the lower electrode. The branches 206B2 interact with each other to form a thin film capacitor layer. The combination of lower electrode 206A1 and lower electrode branch 206A2 and the combination of lower electrode 206B1 and lower electrode branch 206B2 may also have a comb-shaped structure of capacitive electrodes CA and CB as shown in Figure 3, wherein lower electrode branch 206A2, lower electrode branch 206B2 corresponds to the electrode branches CAa and CBa respectively. Likewise, lower electrode branches 206A2, 206B2 may also include, for example, copper, silver, and/or other suitable conductive metal materials.

Base material 202, resistive layer 204, lower electrodes 206A1, 206B1, first dielectric layer 208, terminal electrodes 210A, 210B, first upper electrodes 212A, 212B, second dielectric layer 214, second upper electrodes 216A1, 216B1, upper electrode The branches 216A2 and 216B2, the protective layer 218 and the side electrodes 222A and 222B can be connected to the base material 102, the resistive layer 104, the lower electrodes 106A and 106B, the first dielectric layer 108, the terminal electrodes 110A and 110B, and the first upper electrode of FIG. 1 respectively. 112A, 112B, the second dielectric layer 114, the second upper electrodes 116A1, 116B1, the electrode branches 116A2, 116B2, the protective layer 118 and the side electrodes 122A, 122B are the same or similar, so please refer to the previous paragraphs for related descriptions, and will not be repeated here. .

The thin film chip resistor capacitor 200 is equivalent to a parallel resistor-capacitor circuit. FIG. 5 is an equivalent circuit diagram of the thin film chip resistor and capacitor 200 of FIG. 4 . The equivalent circuit diagram shown in Figure 5 includes a resistor R and a capacitor C1, C2 connected in parallel with each other, and a first resistor R and a capacitor C1, C2 coupled to the opposite sides of the resistor R and the capacitor C1, C2 respectively. terminal T1 and the second terminal T2, where the resistor R corresponds to the resistance layer 204, the capacitor C1 corresponds to the second upper electrode 216A1, 216B1 and the upper electrode branches 216A2, 216B2, the capacitor C2 corresponds to the lower electrode 206A1, 206B1 and the lower electrode branch 206A2, 206B2, The first terminal T1 and the second terminal T2 correspond to the terminal electrodes 210A and 210B respectively. Since the upper and lower sides of the thin film chip resistor capacitor 200 are designed with thin film capacitor layers, its capacitance value can be further increased.

6A to 6F are cross-sectional views of various stages of manufacturing the thin film chip resistor and capacitor 200 of FIG. 4 . First, as shown in FIG. 6A , a base material 202 is provided, and a resistance layer 204 is formed on the base material 202 . The resistive layer 204 can be formed on the substrate 202 by lamination, printing, or physical vapor deposition such as sputtering, depending on the type of material.

Next, as shown in FIG. 6B , first upper electrodes 212A and 212B are formed on the resistive layer 204 , and lower electrodes 206A1 and 206B1 and lower electrode branches 206A2 and 206B2 are formed on the side of the base material 202 opposite to the resistive layer 204 . . The lower electrodes 206A1 and 206B1, the lower electrode branches 206A2 and 206B2 and the first upper electrodes 212A and 212B may be formed in the following manner. First, a conductive layer is formed on the substrate 202 and the resistive layer 204 using, for example, sputtering or thin film lamination, and then the formed conductive layer is patterned using processes such as photolithography and etching to remove unnecessary components. part, and then perform an electroplating process, thereby forming lower electrodes 206A1 and 206B1, lower electrode branches 206A2 and 206B2 and first upper electrodes 212A and 212B. Processes such as photolithography and etching can remove materials of different thicknesses everywhere, so that the thickness of the lower electrode branches 206A2 and 206B2 is smaller than that of the lower electrode branches 206A2 and 206B2. The thickness of electrodes 206A1 and 206B1. In other embodiments, the lower electrodes 206A1 and 206B1, the lower electrode branches 206A2 and 206B2 and the first upper electrodes 212A and 212B may be formed by printing.

After that, as shown in FIG. 6C , the first dielectric layer 208 is formed on the portion of the resistive layer 204 that is not covered by the first upper electrodes 212A and 212B, and the first dielectric layer 208 is formed on the portion of the base material 202 that is not covered by the lower electrodes 206A1 and 206B1. A third dielectric layer 224 is formed. The first dielectric layer 208 and the third dielectric layer 224 can be formed by, for example, coating, photoresist dry film lamination, or printing technology according to their materials. The top of the first dielectric layer 208 may be coplanar with the tops of the first upper electrodes 212A and 212B, and the top of the third dielectric layer 224 may be coplanar with the tops of the lower electrodes 206A1 and 206B1.

Next, as shown in FIG. 6D , second upper electrodes 216A1 and 216B1 and upper electrode branches 216A2 and 216B2 are formed on the first dielectric layer 208 and the first upper electrodes 212A and 212B, and then between the second upper electrodes 216A1 and 216B1 A second dielectric layer 214 covering the upper electrode branches 216A2 and 216B2 is formed therebetween. The second upper electrodes 216A1 and 216B1, the upper electrode branches 216A2 and 216B2 and the second dielectric layer 214 may be formed in the following manner. First, a conductive layer is formed on the first dielectric layer 208 and the first upper electrodes 212A and 212B using, for example, sputtering or thin film lamination, and then the formed conductive layer is patterned and removed using processes such as photolithography and etching. The unnecessary parts are then subjected to an electroplating process, thereby forming second upper electrodes 216A1 and 216B1 and upper electrode branches 216A2 and 216B2. Processes such as photolithography and etching can remove materials of different thicknesses everywhere, so that the thickness of the upper electrode branches 216A2 and 216B2 is less than The thickness of the second upper electrodes 216A1 and 216B1. In other embodiments, the second upper electrodes 216A1 and 216B1 and the upper electrode branches 216A2 and 216B2 may be formed by printing. The second dielectric layer 214 can be formed by, for example, coating, photoresist dry film lamination, or printing technology depending on its material. The top of the formed second dielectric layer 214 may be lower than or equal to the top of the second upper electrode 216A1, 216B1, and may be higher than or equal to the top of the upper electrode branch 216A2, 216B2.

Afterwards, as shown in FIG. 6E , a protective layer 218 is formed on the second dielectric layer 214 and the second upper electrodes 216A1 and 216B1. The protective layer 218 is formed to cover the second dielectric layer 214, the upper electrode branches 216A2, 216B2, and part of the second upper electrodes 216A1, 216B1. The protective layer 218 can be formed by, for example, coating, photoresist dry film lamination, or printing technology depending on its material.

Next, as shown in FIG. 6F , a side electrode 222A is formed on the left side of the base material 202, the resistance layer 204, the lower electrode 206A1, the first upper electrode 212A, and the second upper electrode 216A1, and the side electrode 222A is formed on the base material 202, the resistance layer 204, and the left side of the second upper electrode 216A1. The right sides of the lower electrode 206B1, the first upper electrode 212B, and the second upper electrode 216B1 form a side electrode 222B. The side electrodes 222A and 222B can be formed on the left and right sides of the base material 202 and the resistive layer 204 respectively by sputtering and extend up and down to the protective layer 218 and the third dielectric layer 224 and cover the second upper electrodes 216A1 and 216B1. and lower electrodes 206A1, 206B1. In some embodiments, a metal film layer such as tin or nickel can be plated on the outside of the side electrodes 222A and 222B.

The thin film chip resistor and capacitor 100 in Figure 1 can also be produced similarly to the above paragraphs in conjunction with the contents shown in Figures 6A to 6F. Since thin film chip resistors The capacitor electrode of the capacitor 100 is only on one side of the base material 102, so there is no need to form electrode branches and dielectric layers on the other side of the base material 102 relative to the resistance layer 104; the manufacturing steps of the remaining components can be as shown in Figure 6A to The content shown in Figure 6F is the same, so the description will not be repeated here.

Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.

100:Thin film chip resistor and capacitor

102:Substrate

104:Resistance layer

106A, 106B: Lower electrode

108: First dielectric layer

110A, 110B: terminal electrode

112A, 112B: first upper electrode

114: Second dielectric layer

116A1, 116B1: second upper electrode

116A2, 116B2: Electrode branch

118:Protective layer

122A, 122B: Side electrode

Claims (10)

A thin film chip resistor and capacitor, including: a base material; A resistance layer is provided on the base material; a first dielectric layer disposed on the resistive layer; a first thin film capacitor layer, disposed on the first dielectric layer, the first thin film capacitor layer including a first capacitor electrode and a second capacitor electrode that are physically separated from each other; a first terminal electrode disposed on a first side of the substrate and coupled to the resistive layer and the first capacitive electrode; and A second terminal electrode is disposed on a second side of the substrate relative to the first side and couples the resistive layer and the second capacitive electrode. The thin film chip resistor capacitor according to claim 1, wherein the first capacitor electrode and the second capacitor electrode are comb-shaped electrodes, and the electrode branches of the first capacitor electrode and the electrode branches of the second capacitor electrode are alternately arranged. . The thin film chip resistor and capacitor as described in claim 2 further includes: A second dielectric layer is disposed on the first thin film capacitor layer and covers the electrode branches of the first capacitor electrode and the electrode branches of the second capacitor electrode. The thin film chip resistor and capacitor as described in claim 1 further includes: A second thin film capacitor layer is disposed on the other side of the substrate relative to the resistive layer. The second thin film capacitor layer includes entities that are physically separated from each other and are respectively coupled to the first terminal electrode and the second terminal electrode. a third capacitor electrode and a fourth capacitor electrode. The thin film chip resistor capacitor according to claim 4, wherein the third capacitor electrode and the fourth capacitor electrode are comb-shaped electrodes, and the electrode branches of the third capacitor electrode and the electrode branches of the fourth capacitor electrode are alternately arranged. . The thin film chip resistor and capacitor as described in claim 5 further includes: A third dielectric layer is disposed on the second thin film capacitor layer and covers the electrode branches of the third capacitor electrode and the electrode branches of the fourth capacitor electrode. A method of making thin film chip resistors and capacitors, including: Provide a base material; forming a resistive layer on the substrate; forming a first dielectric layer on the resistive layer; forming a first thin film capacitor layer on the first dielectric layer, the first thin film capacitor layer including a first capacitor electrode and a second capacitor electrode that are physically separated from each other; forming a first terminal electrode coupling the resistive layer and the first capacitive electrode on a first side of the substrate; and A second terminal electrode coupling the resistive layer and the second capacitive electrode is formed on a second side of the substrate relative to the first side. The method described in request item 7 further includes: A second dielectric layer is formed on the first thin film capacitor layer, and the second dielectric layer covers the electrode branches of the first capacitor electrode and the electrode branches of the second capacitor electrode. The method described in request item 7 further includes: A second thin film capacitor layer is formed on the other side of the base material relative to the resistive layer. The second thin film capacitor layer includes two layers that are physically separated from each other and coupled to the first terminal electrode and the second terminal electrode respectively. a third capacitor electrode and a fourth capacitor electrode. The method described in request item 9 further includes: A third dielectric layer is formed on the second thin film capacitor layer, and the third dielectric layer covers the electrode branches of the third capacitor electrode and the electrode branches of the fourth capacitor electrode.

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