TWI823248B - Method for transferring wafers - Google Patents

Method for transferring wafers Download PDF

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TWI823248B
TWI823248B TW111104279A TW111104279A TWI823248B TW I823248 B TWI823248 B TW I823248B TW 111104279 A TW111104279 A TW 111104279A TW 111104279 A TW111104279 A TW 111104279A TW I823248 B TWI823248 B TW I823248B
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wafers
row
wafer
arranging
preset
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TW202245208A (en
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郎欣林
羅會才
閆靜
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中國大陸商深圳市豐泰工業科技有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

公開了一種晶片轉移方法,晶片轉移方法包括:沿第一方向佈置第一排晶片,第一排晶片包括多個晶片;相對第一排晶片按預設第一預設間隔沿第一方向佈置第二排晶片,第二排晶片包括多個晶片;提取第一列晶片,第一列晶片包括來自第一排晶片中的至少一個晶片和來自第二排晶片中的至少一個晶片;沿第二方向佈置第一列晶片;提取第二列晶片,第二列晶片包括來自第一排晶片中剩餘的至少一個晶片和來自第二排晶片中剩餘的至少一個晶片;相對第一列晶片按預設第二預設間隔沿第二方向佈置第二列晶片。A wafer transfer method is disclosed. The wafer transfer method includes: arranging a first row of wafers along a first direction, the first row of wafers including a plurality of wafers; arranging a first row of wafers at a preset first preset interval along the first direction relative to the first row of wafers. two rows of wafers, the second row of wafers including a plurality of wafers; extracting the first row of wafers, the first row of wafers including at least one wafer from the first row of wafers and at least one wafer from the second row of wafers; along a second direction Arranging the first row of wafers; extracting the second row of wafers, the second row of wafers including at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; relative to the first row of wafers at a preset The second row of wafers is arranged along the second direction at two predetermined intervals.

Description

晶片轉移方法Wafer transfer method

相關申請的引用References to related applications

本案要求於2021年02月08日向中華人民共和國國家智慧財產權局提交的申請號為202110170599.3,發明名稱為“晶片轉移方法”的發明專利案的全部權益,並通過引用的方式將其全部內容併入本案。This case requires all the rights and interests of the invention patent case with the application number 202110170599.3 and the invention name "Chip Transfer Method" submitted to the National Intellectual Property Bureau of the People's Republic of China on February 8, 2021, and its entire content is incorporated by reference this case.

本案大體上涉及半導體設備技術領域,更具體地涉及晶片轉移方法。The case relates generally to the field of semiconductor equipment technology and more specifically to wafer transfer methods.

對晶圓進行切割時,晶圓中心點位置的晶片性能相對均勻,而晶圓邊緣位置的晶片性能與中心位置的晶片性能差距較大,可能會有5個波長的差距。When cutting a wafer, the performance of the wafer at the center of the wafer is relatively uniform, while the performance of the wafer at the edge of the wafer is significantly different from the performance of the wafer at the center, and there may be a gap of 5 wavelengths.

在使用晶圓上的晶片製作顯示幕時,如果按照晶圓上的晶片順序轉移和排列晶片,可能會造成顯示幕上晶片的品質分佈不均勻。When using chips on a wafer to make a display screen, if the chips are transferred and arranged according to the order of the chips on the wafer, the quality distribution of the chips on the display screen may be uneven.

本案涉及晶片轉移方法,其包括:This case involves wafer transfer methods, which include:

沿第一方向佈置第一排晶片,所述第一排晶片包括多個晶片;arranging a first row of wafers along a first direction, the first row of wafers including a plurality of wafers;

相對所述第一排晶片按預設第一預設間隔沿所述第一方向佈置第二排晶片,所述第二排晶片包括多個晶片;Arranging a second row of wafers along the first direction at a predetermined first preset interval relative to the first row of wafers, the second row of wafers including a plurality of wafers;

提取第一列晶片,所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片;extracting a first column of wafers, the first column of wafers including at least one wafer from the first row of wafers and at least one wafer from the second row of wafers;

沿第二方向佈置所述第一列晶片;arranging the first column of wafers along a second direction;

提取所述第二列晶片,所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;以及extracting the second column of wafers, the second column of wafers including at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; and

相對所述第一列晶片按預設第二預設間隔沿所述第二方向佈置所述第二列晶片。The second row of wafers is arranged along the second direction at a predetermined second predetermined interval relative to the first row of wafers.

在某些實施方案中,所述沿第一方向佈置第一排晶片包括:In some embodiments, arranging the first row of wafers along the first direction includes:

從晶圓上提取所述第一排晶片,其中所述晶圓包括以第一初始間隔排布的第一排晶片和第二排晶片;沿所述第一方向在所述第一料盤上佈置提取的所述第一排晶片;以及Extracting the first row of wafers from a wafer, wherein the wafer includes a first row of wafers and a second row of wafers arranged at a first initial spacing; on the first tray along the first direction arranging the extracted first row of wafers; and

所述相對所述第一排晶片按預設第一預設間隔沿所述第一方向佈置第二排晶片包括:Arranging the second row of wafers along the first direction at a preset first preset interval relative to the first row of wafers includes:

從所述晶圓上提取所述第二排晶片;相對所述第一排晶片按預設第一預設間隔沿所述第一方向在所述第一料盤上佈置提取的所述第二排晶片。Extract the second row of wafers from the wafer; arrange the extracted second row of wafers on the first tray at a preset first preset interval along the first direction relative to the first row of wafers. Row wafers.

在某些實施方案中,所述提取第一列晶片,所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片,沿第二方向佈置所述第一列晶片包括:In some embodiments, the extracting a first column of wafers, the first column of wafers including at least one wafer from the first row of wafers and at least one wafer from the second row of wafers, along a Arranging the first row of wafers in two directions includes:

從所述第一料盤上提取所述第一列晶片,其中所述第一料盤包括以第二初始間隔排布的第一列晶片和第二列晶片,所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片;沿所述第二方向在所述第四料盤上佈置提取的所述第一列晶片;以及The first column of wafers is extracted from the first tray, wherein the first column includes a first column of wafers and a second column of wafers arranged at a second initial distance, the first column of wafers includes at least one wafer from the first row of wafers and at least one wafer from the second row of wafers; arranging the extracted first row of wafers on the fourth tray along the second direction; and

所述提取所述第二列晶片,所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;相對所述第一列晶片按預設第二預設間隔沿所述第二方向佈置所述第二列晶片包括:extracting the second row of wafers, the second row of wafers including at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; relative to the first row of wafers; Arranging the row of wafers along the second direction at a preset second preset interval includes:

從所述第一料盤上提取所述第二列晶片;所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;相對所述第一列晶片按預設第二預設間隔沿所述第二方向在所述第四料盤上佈置提取的所述第二列晶片。The second row of wafers is extracted from the first tray; the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers. ; Arrange the extracted second row of wafers on the fourth tray along the second direction at a preset second preset interval relative to the first row of wafers.

在某些實施方案中,所述沿第一方向佈置第一排晶片包括:In some embodiments, arranging the first row of wafers along the first direction includes:

從第二料盤上提取所述第一排晶片,其中所述第二料盤包括以第一初始間隔排布的第一排晶片和第二排晶片;沿所述第一方向在所述第三料盤上佈置提取的所述第一排晶片;以及The first row of wafers is extracted from a second tray, wherein the second tray includes a first row of wafers and a second row of wafers arranged at a first initial interval; in the first row along the first direction, Arrange the extracted first row of wafers on three trays; and

所述相對所述第一排晶片按預設第一預設間隔沿所述第一方向佈置第二排晶片包括:Arranging the second row of wafers along the first direction at a preset first preset interval relative to the first row of wafers includes:

從所述第二料盤上提取所述第二排晶片;相對所述第一排晶片按預設第一預設間隔沿所述第一方向在所述第三料盤上佈置所述第二排晶片。Extract the second row of wafers from the second tray; arrange the second row of wafers on the third tray along the first direction at a preset first preset interval relative to the first row of wafers. Row wafers.

在某些實施方案中,所述提取第一列晶片,所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片,沿第二方向佈置所述第一列晶片包括:In some embodiments, the extracting a first column of wafers, the first column of wafers including at least one wafer from the first row of wafers and at least one wafer from the second row of wafers, along a Arranging the first row of wafers in two directions includes:

從所述第三料盤上提取所述第一列晶片,其中所述第三料盤包括以第二初始間隔排布的第一列晶片和第二列晶片;所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片;沿所述第二方向在所述第五料盤上佈置提取的所述第一列晶片;以及The first column of wafers is extracted from the third tray, wherein the third column includes a first column of wafers and a second column of wafers arranged at a second initial interval; the first column of wafers includes at least one wafer from the first row of wafers and at least one wafer from the second row of wafers; arranging the extracted first row of wafers on the fifth tray along the second direction; and

所述提取所述第二列晶片,所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;相對所述第一列晶片按預設第二預設間隔沿所述第二方向佈置所述第二列晶片包括:extracting the second row of wafers, the second row of wafers including at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; relative to the first row of wafers; Arranging the row of wafers along the second direction at a preset second preset interval includes:

從所述第三料盤上提取所述第二列晶片;所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;相對所述第一列晶片按預設第二預設間隔沿所述第二方向在所述第五料盤上佈置所述第二列晶片。The second row of wafers is extracted from the third tray; the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers. ; Arrange the second row of wafers on the fifth tray along the second direction at a preset second preset interval relative to the first row of wafers.

在某些實施方案中,所述第一初始間隔小於所述第一預設間隔。In some embodiments, the first initial interval is less than the first preset interval.

在某些實施方案中,所述第二初始間隔小於所述第二預設間隔。In some embodiments, the second initial interval is less than the second preset interval.

在某些實施方案中,所述第一方向與所述第二方向之間具有第一預設角度,所述第一預設角度介於0°至180°之間。In some embodiments, there is a first preset angle between the first direction and the second direction, and the first preset angle is between 0° and 180°.

在某些實施方案中,所述第一方向與所述第二方向互相垂直。In some embodiments, the first direction and the second direction are perpendicular to each other.

在某些實施方案中,所述晶片轉移方法包括:In certain embodiments, the wafer transfer method includes:

沿所述第一方向佈置第一排晶片,所述第一排晶片包括多個第一子排晶片,所述第一子排晶片包括多個晶片;arranging a first row of wafers along the first direction, the first row of wafers including a plurality of first sub-rows of wafers, the first sub-row of wafers including a plurality of wafers;

相對所述第一排晶片按預設第一預設間隔沿所述第一方向佈置第二排晶片,所述第二排晶片包括多個第二子排晶片,所述第二子排晶片包括多個晶片;A second row of wafers is arranged along the first direction at a predetermined first preset interval relative to the first row of wafers. The second row of wafers includes a plurality of second sub-row wafers, and the second sub-row wafers include multiple wafers;

提取第一列晶片,所述第一列晶片包括多個第一子列晶片,所述第一子列晶片包括來自所述第一子排晶片中的至少一個晶片和來自所述第二子排晶片中的至少一個晶片;Extracting a first row of wafers, the first row of wafers including a plurality of first sub-rows of wafers, the first sub-row of wafers including at least one wafer from the first sub-row of wafers and a plurality of wafers from the second sub-row of wafers at least one of the wafers;

沿所述第二方向佈置所述第一列晶片;arranging the first column of wafers along the second direction;

提取所述第二列晶片,所述第二列晶片包括多個第二子列晶片,所述第二子列晶片包括來自所述第一子排晶片中剩餘的至少一個晶片和來自所述第二子排晶片中剩餘的至少一個晶片;以及Extracting the second column of wafers, the second column of wafers including a plurality of second sub-column of wafers, the second sub-column of wafers including at least one remaining wafer from the first sub-column of wafers and the remaining wafers from the first sub-column of wafers. at least one remaining wafer in the second sub-row of wafers; and

相對所述第一列晶片按預設第二預設間隔沿所述第二方向佈置所述第二列晶片。The second row of wafers is arranged along the second direction at a predetermined second predetermined interval relative to the first row of wafers.

在某些實施方案中,本案提供的晶片轉移方法包括:沿第一方向佈置第一排晶片,第一排晶片包括多個晶片;相對第一排晶片按預設第一預設間隔沿第一方向佈置第二排晶片,第二排晶片包括多個晶片;提取第一列晶片,第一列晶片包括來自第一排晶片中的至少一個晶片和來自第二排晶片中的至少一個晶片;沿第二方向佈置第一列晶片;提取第二列晶片,第二列晶片包括來自第一排晶片中剩餘的至少一個晶片和來自第二排晶片中剩餘的至少一個晶片;相對第一列晶片按預設第二預設間隔沿第二方向佈置第二列晶片。利用上述的晶片轉移方法轉移多個晶片,使得多個晶片之間形成具有一定間距的高密度二維陣列排布。In some embodiments, the wafer transfer method provided in this case includes: arranging a first row of wafers along a first direction, where the first row of wafers includes a plurality of wafers; Arrange a second row of wafers in a direction, the second row of wafers includes a plurality of wafers; extract a first row of wafers, the first row of wafers includes at least one wafer from the first row of wafers and at least one wafer from the second row of wafers; along Arrange the first row of wafers in the second direction; extract the second row of wafers, the second row of wafers including at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; press relative to the first row of wafers The second row of wafers is arranged along the second direction at a second predetermined interval. The above-mentioned wafer transfer method is used to transfer multiple wafers, so that a high-density two-dimensional array arrangement with a certain spacing is formed between the multiple wafers.

為了對本案的技術特徵、目的和效果有更加清楚的理解,現對照圖式詳細說明本案的具體實施方式。以下描述中,需要理解的是,“前”、“後”、“上”、“下”、“左”、“右”、“縱”、“橫”、“豎直”、“水準”、“頂”、“底”、“內”、“外”、“頭”、“尾”等指示的方位或位置關係為基於圖式所示的方位或位置關係、以特定的方位構造和操作,僅是為了便於描述本技術方案,而不是指示所指的裝置或元件必須具有特定的方位,因此不能理解為對本案的限制。In order to have a clearer understanding of the technical features, purposes and effects of this case, the specific implementation of this case is now described in detail with reference to the drawings. In the following description, what needs to be understood is "front", "back", "up", "down", "left", "right", "vertical", "horizontal", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", "head", "tail", etc. are based on the orientation or positional relationship shown in the diagram and are constructed and operated in specific orientations. It is only for the convenience of describing the present technical solution, and does not indicate that the device or element referred to must have a specific orientation, and therefore cannot be understood as a limitation of the present case.

還需要說明的是,除非另有明確的規定和限定,“安裝”、“相連”、“連接”、“固定”、“設置”等術語應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係。當一個元件被稱為在另一元件“上”或“下”時,該元件能夠“直接地”或“間接地”位於另一元件之上,或者也可能存在一個或更多個居間元件。術語“第一”、“第二”、“第三”等僅是為了便於描述本技術方案,而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量,由此,限定有“第一”、“第二”、“第三”等的特徵可以明示或者隱含地包括一個或者更多個該特徵。對於本發明所屬技術領域中具有通常知識者而言,可以根據具體情況理解上述術語在本案中的具體含義。It should also be noted that, unless otherwise expressly stipulated and limited, terms such as "installation", "connection", "connection", "fixing" and "setting" should be understood in a broad sense. For example, it can be a fixed connection or a fixed connection. It can be detachably connected or integrated; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interaction between two elements. When an element is referred to as being "on" or "under" another element, it can be "directly" or "indirectly" on the other element or one or more intervening elements may also be present. The terms "first", "second", "third", etc. are only used to facilitate the description of the present technical solution and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of indicated technical features. Therefore, Features defined as "first," "second," "third," etc. may explicitly or implicitly include one or more of these features. For those with ordinary knowledge in the technical field to which the present invention belongs, the specific meanings of the above terms in this case can be understood according to the specific circumstances.

以下描述中,為了說明而不是為了限定,提出了諸如特定系統結構、技術之類的具體細節,以便透徹理解本案實施例。然而,本發明所屬技術領域中具有通常知識者應當清楚,在沒有這些具體細節的其它實施例中也可以實現本案。在其它情況中,省略對眾所周知的系統、裝置、電路以及方法的詳細說明,以免不必要的細節妨礙本案的描述。In the following description, for the purpose of explanation rather than limitation, specific details such as specific system structures and technologies are provided to provide a thorough understanding of the embodiments of this case. However, it will be apparent to those of ordinary skill in the art that the present invention may be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description with unnecessary detail.

參考圖1和圖2,依據本案提供的晶片轉移方法,其包括:Referring to Figures 1 and 2, the wafer transfer method provided in this case includes:

S110:沿第一方向佈置第一排晶片,第一排晶片包括多個晶片;S110: Arrange the first row of wafers along the first direction, and the first row of wafers includes multiple wafers;

S120:相對第一排晶片按預設第一預設間隔沿第一方向佈置第二排晶片,第二排晶片包括多個晶片;S120: Arrange the second row of wafers along the first direction at a preset first preset interval relative to the first row of wafers, and the second row of wafers includes multiple wafers;

S130:提取第一列晶片,第一列晶片包括來自第一排晶片中的至少一個晶片和來自第二排晶片中的至少一個晶片;S130: Extract the first row of wafers, where the first row of wafers includes at least one wafer from the first row of wafers and at least one wafer from the second row of wafers;

S140:沿第二方向佈置第一列晶片;S140: Arrange the first row of wafers along the second direction;

S150:提取第二列晶片,第二列晶片包括來自第一排晶片中剩餘的至少一個晶片和來自第二排晶片中剩餘的至少一個晶片;S150: Extract the second row of wafers, where the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers;

S160:相對第一列晶片按預設第二預設間隔沿第二方向佈置第二列晶片。S160: Arrange the second row of wafers in the second direction at a predetermined second preset interval relative to the first row of wafers.

利用上述的晶片轉移方法,通過沿第一方向佈置第一排晶片,然後相對第一排晶片佈置第二排晶片,第二排晶片與第一排晶片之間具有預設第一預設間隔。然後提取第一列晶片,按第二方向佈置第一列晶片,再提取第二列晶片,然後相對第一列晶片排布第二列晶片。第二列晶片與第一列晶片之間具有預設第二預設間隔。這樣,多次重複上述步驟,使得多個晶片之間具有預設第一預設間隔和預設第二預設間隔,從而能夠根據實際需求對多個晶片之間的間隔進行調整,進而形成具有預設間隔的二維晶片陣列。Using the above wafer transfer method, by arranging the first row of wafers along the first direction, and then arranging the second row of wafers relative to the first row of wafers, there is a preset first preset interval between the second row of wafers and the first row of wafers. Then extract the first row of wafers, arrange the first row of wafers in the second direction, extract the second row of wafers, and then arrange the second row of wafers relative to the first row of wafers. There is a preset second preset distance between the second row of wafers and the first row of wafers. In this way, the above steps are repeated multiple times, so that there are preset first preset intervals and preset second preset intervals between the plurality of wafers, so that the intervals between the plurality of wafers can be adjusted according to actual needs, thereby forming a A two-dimensional array of wafers at preset intervals.

當然,本案提供的晶片轉移方法,不僅僅可以對單顆晶片進行轉移,也可以對成排的晶片進行轉移,還可以應用於封裝好的多功能集成單元。由多顆RGB晶片組成的一個彩色圖元單元、或者由多顆LED晶片組成的一個背光單元。本實施例提供的晶片轉移方法可以應用於集成了邏輯晶片、MEMS裝置、或者感測器中的一種或多種的多功能積體電路單元。Of course, the chip transfer method provided in this case can not only transfer single wafers, but also transfer rows of wafers, and can also be applied to packaged multi-functional integrated units. A color picture element unit composed of multiple RGB chips, or a backlight unit composed of multiple LED chips. The wafer transfer method provided in this embodiment can be applied to a multi-function integrated circuit unit integrating one or more of a logic chip, a MEMS device, or a sensor.

參考圖2,以其中一個晶片為原點建立二維直角坐標系,以該晶片的一條邊為x軸,以該晶片另一條與該條邊垂直的邊為y軸。圖示中第一方向為A方向,第二方向為B方向,即第一方向為沿x軸方向,第二方向為沿y軸方向。第一預設間隔為y1,第二預設間隔為x1。當然,在某些實施方案中,第一方向也可以為y軸方向,第二方向可以為x軸方向。Referring to Figure 2, a two-dimensional rectangular coordinate system is established with one of the wafers as the origin, with one side of the wafer as the x-axis, and another side of the wafer perpendicular to the side as the y-axis. In the figure, the first direction is the A direction, and the second direction is the B direction, that is, the first direction is along the x-axis direction, and the second direction is along the y-axis direction. The first preset interval is y1, and the second preset interval is x1. Of course, in some embodiments, the first direction may also be the y-axis direction, and the second direction may be the x-axis direction.

在某些實施方案中,本案實施例提供的晶片轉移方法,其包括:In some embodiments, the wafer transfer method provided by this example includes:

S210:沿第一方向佈置第一排晶片,第一排晶片包括多個晶片;S210: Arrange the first row of wafers along the first direction, and the first row of wafers includes multiple wafers;

S220:相對第一排晶片按預設第一預設間隔沿第一方向佈置第二排晶片;S220: Arrange the second row of wafers in the first direction at a preset first preset interval relative to the first row of wafers;

S230:提取第一列晶片,第一列晶片包括來自第一排晶片中的至少一個晶片;S230: Extract the first row of wafers, where the first row of wafers includes at least one wafer from the first row of wafers;

S240:沿第二方向佈置第一列晶片;S240: Arrange the first row of wafers along the second direction;

S250:提取第二列晶片,第二列晶片包括來自第一排晶片中剩餘的至少一個晶片和來自第二排晶片中的至少一個晶片;S250: Extract the second row of wafers, where the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one wafer from the second row of wafers;

S260:相對第一列晶片按預設第二預設間隔沿第二方向佈置第二列晶片。S260: Arrange the second row of wafers in the second direction at a predetermined second preset interval relative to the first row of wafers.

上述的晶片轉移方法,通過提取第一列晶片時,第一列晶片包括第一排晶片中的至少一個晶片;提取第二列晶片時,第二列晶片包括來自第一排晶片中剩餘的至少一個晶片和來自第二排晶片中的至少一個晶片。即第一列晶片的數量小於第二列晶片的數量,從而可以根據第一排晶片或第二排晶片的數量對晶片進行轉移及排片,使得多個晶片之間具有第一預設間隔和第二預設間隔。In the above wafer transfer method, when the first row of wafers is extracted, the first row of wafers includes at least one wafer in the first row of wafers; when the second row of wafers is extracted, the second row of wafers includes at least one remaining wafer from the first row of wafers. One wafer and at least one wafer from the second row of wafers. That is, the number of wafers in the first row is less than the number of wafers in the second row, so that the wafers can be transferred and arranged according to the number of wafers in the first row or the second row, so that there is a first preset interval between the plurality of wafers and a second row of wafers. Two preset intervals.

在某些實施方案中,第一排晶片包括兩個晶片,第二排晶片包括一個晶片。提取第一列晶片即提取第一排晶片中的一個晶片;提取第二列晶片,即提取第一排晶片中剩餘的一個晶片和第二排晶片中的一個晶片。當然,第一排晶片也可以包括一個晶片,第二排晶片也可以包括兩個晶片,這樣,提取第一列晶片即提取第一排晶片中的一個晶片和第二排晶片中的一個晶片,提取第二列晶片即提取第二排晶片中剩餘的一個晶片。In certain embodiments, the first row of wafers includes two wafers and the second row of wafers includes one wafer. Extracting the first row of wafers means extracting one wafer in the first row of wafers; extracting the second row of wafers means extracting the remaining one wafer in the first row of wafers and one wafer in the second row of wafers. Of course, the first row of wafers can also include one wafer, and the second row of wafers can also include two wafers. In this way, extracting the first row of wafers means extracting one wafer in the first row of wafers and one wafer in the second row of wafers. Extracting the second row of wafers means extracting the remaining wafer in the second row of wafers.

在某些實施方案中,本案實施例提供的晶片轉移方法,其包括:In some embodiments, the wafer transfer method provided by this example includes:

S310:沿第一方向佈置第一排晶片,第一排晶片包括多個晶片;S310: Arrange the first row of wafers along the first direction, and the first row of wafers includes multiple wafers;

S320:相對第一排晶片按預設第一預設間隔沿第一方向佈置第二排晶片;S320: Arrange the second row of wafers in the first direction at a preset first preset interval relative to the first row of wafers;

S330:提取第一列晶片,第一列晶片包括來自第一排晶片中的至少一個晶片和來自第二排晶片中的至少一個晶片;S330: Extract the first row of wafers, where the first row of wafers includes at least one wafer from the first row of wafers and at least one wafer from the second row of wafers;

S340:沿第二方向佈置第一列晶片;S340: Arrange the first row of wafers along the second direction;

S350:提取第二列晶片,第二列晶片包括來自第一排晶片中剩餘的至少一個晶片;S350: Extract the second row of wafers, where the second row of wafers includes at least one remaining wafer from the first row of wafers;

S360:相對第一列晶片按預設第二預設間隔沿第二方向佈置第二列晶片。S360: Arrange the second row of wafers in the second direction at a predetermined second preset interval relative to the first row of wafers.

上述的晶片轉移方法,通過提取第一列晶片時,第一列晶片包括第一排晶片中的至少一個晶片和來自第二排晶片中的至少一個晶片;提取第二列晶片時,第二列晶片包括來自第一排晶片中剩餘的至少一個晶片。即第一列晶片的數量大於第二列晶片的數量,從而可以根據第一排晶片或第二排晶片的數量對晶片進行轉移及排片,使得多個晶片之間具有第一預設間隔和第二預設間隔。In the above wafer transfer method, when extracting the first row of wafers, the first row of wafers includes at least one wafer from the first row of wafers and at least one wafer from the second row of wafers; when extracting the second row of wafers, the second row of wafers The wafers include at least one remaining wafer from the first row of wafers. That is, the number of wafers in the first row is greater than the number of wafers in the second row, so that the wafers can be transferred and arranged according to the number of wafers in the first row or the second row, so that there is a first preset interval between the plurality of wafers and a second row of wafers. Two preset intervals.

在某些實施方案中,第一排晶片包括兩個晶片,第二排晶片包括一個晶片,提取第一列晶片即提取第一排晶片中的一個晶片和第二排晶片中的一個晶片。提取第二列晶片即提取第一排晶片中剩餘的一個晶片。當然,第一排晶片也可以包括一個晶片,第二排晶片包括兩個晶片,提取第一列晶片即提取第一排晶片中的一個晶片和第二排晶片中的一個晶片。In some embodiments, the first row of wafers includes two wafers and the second row of wafers includes one wafer, and extracting the first row of wafers is extracting one wafer from the first row of wafers and one wafer from the second row of wafers. Extracting the second row of wafers means extracting the remaining wafer in the first row of wafers. Of course, the first row of wafers may also include one wafer, and the second row of wafers may include two wafers. Extracting the first row of wafers means extracting one wafer in the first row of wafers and one wafer in the second row of wafers.

在某些實施方案中,沿第一方向佈置第一排晶片包括:In certain embodiments, arranging the first row of wafers in the first direction includes:

從晶圓上提取第一排晶片,其中晶圓包括以第一初始間隔排布的第一排晶片和第二排晶片;沿第一方向在第一料盤上佈置提取的第一排晶片;Extracting a first row of wafers from a wafer, wherein the wafer includes a first row of wafers and a second row of wafers arranged at a first initial interval; arranging the extracted first row of wafers on a first tray along a first direction;

相對第一排晶片按預設第一預設間隔沿第一方向佈置第二排晶片包括:Arranging the second row of wafers along the first direction at a predetermined first preset interval relative to the first row of wafers includes:

從晶圓上提取第二排晶片;相對第一排晶片按預設第一預設間隔沿第一方向在第一料盤上佈置提取的第二排晶片。A second row of wafers is extracted from the wafer; and the extracted second row of wafers are arranged on the first material tray at a first preset interval relative to the first row of wafers along a first direction.

這樣,通過將晶圓上的晶片排布在第一料盤上,不僅實現了晶片的轉移,也實現了將晶片按照第一預設間隔進行排布,進而提高了晶片轉移的效率。避免了將晶片從晶圓上轉移到其他承載件後,再在其他承載件上對晶片進行排布,然後再將晶圓轉移至目標料盤上。利用本案實施例提供的晶片轉移方法,可以在轉移晶片的同時對晶片進行排布,實現了晶片的巨量轉移。In this way, by arranging the wafers on the wafer on the first tray, not only the transfer of the wafers is realized, but also the wafers are arranged according to the first preset intervals, thereby improving the efficiency of the wafer transfer. This avoids the need to transfer the wafers from the wafer to other carriers, then arrange the wafers on other carriers, and then transfer the wafers to the target tray. Using the wafer transfer method provided by the embodiment of this case, the wafers can be arranged while transferring the wafers, thereby realizing the transfer of a large amount of wafers.

在某些實施方案中,提取第一列晶片,第一列晶片包括來自第一排晶片中的至少一個晶片和來自第二排晶片中的至少一個晶片,沿第二方向佈置第一列晶片包括:In some embodiments, extracting the first column of wafers, the first column of wafers including at least one wafer from the first row of wafers and at least one wafer from the second row of wafers, arranging the first column of wafers in the second direction includes :

從第一料盤上提取第一列晶片,其中第一料盤包括以第二初始間隔排布的第一列晶片和第二列晶片,第一列晶片包括來自第一排晶片中的至少一個晶片和來自第二排晶片中的至少一個晶片;沿第二方向在第四料盤上佈置提取的第一列晶片;A first column of wafers is extracted from a first tray, wherein the first tray includes a first column of wafers and a second column of wafers arranged at a second initial spacing, the first column of wafers including at least one wafer from the first row wafers and at least one wafer from the second row of wafers; arranging the extracted first row of wafers on a fourth tray along a second direction;

提取第二列晶片,第二列晶片包括來自第一排晶片中剩餘的至少一個晶片和來自第二排晶片中剩餘的至少一個晶片;相對第一列晶片按預設第二預設間隔沿第二方向佈置第二列晶片包括:Extracting the second row of wafers, the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; relative to the first row of wafers at a preset second preset interval along the first row of wafers The second row of wafers arranged in two directions includes:

從第一料盤上提取第二列晶片;第二列晶片包括來自第一排晶片中剩餘的至少一個晶片和來自第二排晶片中剩餘的至少一個晶片;相對第一列晶片按預設第二預設間隔沿第二方向在第四料盤上佈置提取的第二列晶片。The second row of wafers is extracted from the first row of wafers; the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; relative to the first row of wafers, the preset number is Arrange the extracted second row of wafers on the fourth material tray at two preset intervals along the second direction.

這樣,在將第一料盤上的第一列晶片轉移至第四料盤上,使得第四料盤上的多個晶片之間具有第一預設間隔和第二預設間隔,從而使得第四料盤上的多個晶片之間形成二維陣列排布。進而實現晶片的巨量轉移,並提高晶片轉移的效率。In this way, when the first column of wafers on the first material tray is transferred to the fourth material tray, there is a first preset interval and a second preset interval between the plurality of wafers on the fourth material tray, so that the third Multiple wafers on the four trays are arranged in a two-dimensional array. This enables massive transfer of wafers and improves the efficiency of wafer transfer.

在某些實施方案中,沿第一方向佈置第一排晶片包括:In certain embodiments, arranging the first row of wafers in the first direction includes:

從第二料盤上提取第一排晶片,其中第二料盤包括以第一初始間隔排布的第一排晶片和第二排晶片;沿第一方向在第三料盤上佈置提取的第一排晶片;A first row of wafers is extracted from a second tray, wherein the second tray includes a first row of wafers and a second row of wafers arranged at a first initial interval; and the extracted third row of wafers is arranged on a third tray along a first direction. a row of wafers;

相對第一排晶片按預設第一預設間隔沿第一方向佈置第二排晶片包括:Arranging the second row of wafers along the first direction at a predetermined first preset interval relative to the first row of wafers includes:

從第二料盤上提取第二排晶片;相對第一排晶片按預設第一預設間隔沿第一方向在第三料盤上佈置第二排晶片。Extract the second row of wafers from the second material tray; arrange the second row of wafers on the third material tray at a preset first preset interval along a first direction relative to the first row of wafers.

這樣,通過將第二料盤上的晶片排布在第三料盤上,不僅實現了多個晶片之間轉移,也實現了將晶片按照第一預設間隔進行排布,進而提高了晶片轉移的效率。避免了將晶片從第二料盤上轉移到其他承載件後,在其他承載件上對晶片進行排布,然後再將晶片轉移至第三料盤上。利用本案實施例提供的晶片轉移方法,可以在轉移晶片的同時對晶片進行排布,實現了晶片的巨量轉移。In this way, by arranging the wafers on the second tray on the third tray, not only the transfer between multiple wafers is realized, but also the wafers are arranged according to the first preset interval, thereby improving the efficiency of wafer transfer. s efficiency. It is avoided that after transferring the wafers from the second material tray to other carriers, arranging the wafers on other carriers and then transferring the wafers to the third material tray is avoided. Using the wafer transfer method provided by the embodiment of this case, the wafers can be arranged while transferring the wafers, thereby realizing the transfer of a large amount of wafers.

在某些實施方案中,提取第一列晶片,第一列晶片包括來自第一排晶片中的至少一個晶片和來自第二排晶片中的至少一個晶片,沿第二方向佈置第一列晶片包括:In some embodiments, extracting the first column of wafers, the first column of wafers including at least one wafer from the first row of wafers and at least one wafer from the second row of wafers, arranging the first column of wafers in the second direction includes :

從第三料盤上提取第一列晶片,其中第三料盤包括以第二初始間隔排布的第一列晶片和第二列晶片;第一列晶片包括來自第一排晶片中的至少一個晶片和來自第二排晶片中的至少一個晶片;沿第二方向在第五料盤上佈置提取的第一列晶片;The first column of wafers is extracted from a third tray, wherein the third tray includes a first column of wafers and a second column of wafers arranged at a second initial interval; the first column of wafers includes at least one of the first row of wafers. wafers and at least one wafer from the second row of wafers; arranging the extracted first row of wafers on a fifth tray along a second direction;

提取第二列晶片,第二列晶片包括來自第一排晶片中剩餘的至少一個晶片和來自第二排晶片中剩餘的至少一個晶片;相對第一列晶片按預設第二預設間隔沿第二方向佈置第二列晶片包括:Extracting the second row of wafers, the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; relative to the first row of wafers at a preset second preset interval along the first row of wafers The second row of wafers arranged in two directions includes:

從第三料盤上提取第二列晶片;第二列晶片包括來自第一排晶片中剩餘的至少一個晶片和來自第二排晶片中剩餘的至少一個晶片;相對第一列晶片按預設第二預設間隔沿第二方向在第五料盤上佈置第二列晶片。The second row of wafers is extracted from the third tray; the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; relative to the first row of wafers, the preset number is Arrange the second row of wafers on the fifth material tray at two preset intervals along the second direction.

這樣,在將第三料盤上的第一列晶片轉移至第五料盤上,使得第五料盤上的多個晶片之間具有第一預設間隔和第二預設間隔,從而使得第五料盤上的多個晶片之間形成二維陣列排布。進而實現晶片的巨量轉移,並提高晶片轉移的效率。In this way, when the first row of wafers on the third tray is transferred to the fifth tray, there is a first preset interval and a second preset interval between the plurality of wafers on the fifth tray, so that the third Multiple wafers on the five-material tray form a two-dimensional array arrangement. This enables massive transfer of wafers and improves the efficiency of wafer transfer.

在某些實施方案中,第一初始間隔小於第一預設間隔。這樣,可以使得轉移後的多個晶片具有第一預設間隔。第一預設間隔可以根據實際需要進行設置。同時,使得晶圓切割後的多個晶片按照第一預設間隔進行排布。也可以使得第一料盤上的多個晶片在轉移至第二料盤後按照第一預設間隔進行排布。In some implementations, the first initial interval is less than the first preset interval. In this way, the transferred plurality of wafers can have a first preset interval. The first preset interval can be set according to actual needs. At the same time, the multiple wafers after wafer cutting are arranged according to the first preset interval. It is also possible to arrange the plurality of wafers on the first material tray according to the first preset interval after being transferred to the second material tray.

在某些實施方案中,第二初始間隔小於第二預設間隔。這樣可以使得轉移後的多個晶片具有第二預設間隔,第二預設間隔可以根據實際需要進行設置。同時,可以使得第一料盤上的多個晶片在轉移至第三料盤後按照第二預設間隔進行排布。也可以使得第三料盤上的多個晶片在轉移至第五料盤後按照第一預設間隔進行排布。In some embodiments, the second initial interval is less than the second preset interval. In this way, the plurality of transferred wafers can have a second preset interval, and the second preset interval can be set according to actual needs. At the same time, the plurality of wafers on the first material tray can be arranged according to the second preset interval after being transferred to the third material tray. It is also possible to arrange the plurality of wafers on the third material tray according to the first preset interval after being transferred to the fifth material tray.

第一預設間隔介於0.5um至5mm之間,第二預設間隔介於0.5um至5mm之間。在某些實施方案中,第一預設間隔介於0.6um至5mm之間,第二預設間隔介於0.6um至5mm之間。第一預設間隔和第二預設間隔為LED顯示幕上多個晶片之間所需的間隔。常規解析度為1920*1080的高清LED顯示幕需要1920*1080*3個Micro LED晶片,合計是620萬顆晶片。而顯示幕上的晶片需要以第一預設間隔和第二預設間隔構成高密度級的二維陣列結構。The first preset interval is between 0.5um and 5mm, and the second preset interval is between 0.5um and 5mm. In some embodiments, the first preset interval is between 0.6um and 5mm, and the second preset interval is between 0.6um and 5mm. The first preset interval and the second preset interval are the required intervals between the plurality of chips on the LED display screen. A high-definition LED display with a conventional resolution of 1920*1080 requires 1920*1080*3 Micro LED chips, a total of 6.2 million chips. The chips on the display screen need to form a high-density two-dimensional array structure with a first preset interval and a second preset interval.

第一方向與第二方向之間具有第一預設角度,第一預設角度介於0°至180°之間。第一方向和第二方向之間具有第一預設角度,這樣可以根據實際晶片排布的需要選取需要轉移的晶片。There is a first preset angle between the first direction and the second direction, and the first preset angle is between 0° and 180°. There is a first preset angle between the first direction and the second direction, so that the wafers to be transferred can be selected according to actual wafer arrangement requirements.

在某些實施方案中,第一方向與第二方向互相垂直。第一預設角度為90°。這樣可以提高晶片轉移的效率和便於調整晶片排布的位置。同時使得多個晶片之間形成二維陣列結構。In some embodiments, the first direction and the second direction are perpendicular to each other. The first preset angle is 90°. This can improve the efficiency of wafer transfer and facilitate the adjustment of the wafer arrangement position. At the same time, a two-dimensional array structure is formed between multiple wafers.

在某些實施方案中,在沿第一方向佈置第一排晶片前還包括檢測晶片的參數,晶片的參數包括晶片的類型、色差、或波長中的一種或多種。晶片的類型包括紅光晶片、藍光晶片、白光晶片、綠光晶片中的一種或多種。In some embodiments, before arranging the first row of wafers along the first direction, the method further includes detecting parameters of the wafers, and the parameters of the wafers include one or more of wafer type, color difference, or wavelength. The type of chip includes one or more of a red light chip, a blue light chip, a white light chip, and a green light chip.

在某些實施方案中,晶片轉移方法包括:In certain embodiments, the wafer transfer method includes:

S410:沿第一方向佈置第一排晶片,第一排晶片包括多個第一子排晶片,第一子排晶片包括多個晶片;S410: Arrange the first row of wafers along the first direction, the first row of wafers includes a plurality of first sub-row wafers, and the first sub-row of wafers includes a plurality of wafers;

S420:相對第一排晶片按預設第一預設間隔沿第一方向佈置第二排晶片,第二排晶片包括多個第二子排晶片,第二子排晶片包括多個晶片;S420: Arrange the second row of wafers along the first direction at a preset first preset interval relative to the first row of wafers, the second row of wafers includes a plurality of second sub-row wafers, and the second sub-row of wafers includes a plurality of wafers;

S430:提取第一列晶片,第一列晶片包括多個第一子列晶片,第一子列晶片包括來自第一子排晶片中的至少一個晶片和來自第二子排晶片中的至少一個晶片;S430: Extract the first row of wafers. The first row of wafers includes a plurality of first sub-row wafers. The first sub-row of wafers includes at least one wafer from the first sub-row of wafers and at least one wafer from the second sub-row of wafers. ;

S440:沿第二方向佈置第一列晶片;S440: Arrange the first row of wafers along the second direction;

S450:提取第二列晶片,第二列晶片包括多個第二子列晶片,第二子列晶片包括來自第一子排晶片中剩餘的至少一個晶片和來自第二子排晶片中剩餘的至少一個晶片;S450: Extract the second row of wafers. The second row of wafers includes a plurality of second sub-row wafers. The second sub-row of wafers includes at least one remaining wafer from the first sub-row of wafers and at least one remaining wafer from the second sub-row of wafers. a wafer;

S460:相對第一列晶片按預設第二預設間隔沿第二方向佈置第二列晶片。S460: Arrange the second row of wafers in the second direction at a predetermined second preset interval relative to the first row of wafers.

上述的晶片轉移方法,通過佈置第一排晶片和第二排晶片,以及佈置第一列晶片和第二列晶片,其中,第一排晶片包括多個第一子排晶片,第二排晶片包括多個第一子列晶片。在轉移晶片的過程中,可以通過佈置多個第一子排晶片和多個第二子排晶片、以及多個第一子列晶片和多個第二子列晶片實現多個晶片的轉移,從而形成二維陣列結構。The above-mentioned wafer transfer method arranges the first row of wafers and the second row of wafers, and arranges the first row of wafers and the second row of wafers, wherein the first row of wafers includes a plurality of first sub-row wafers, and the second row of wafers includes A plurality of first sub-row wafers. During the process of transferring wafers, the transfer of multiple wafers can be achieved by arranging a plurality of first sub-row wafers and a plurality of second sub-row wafers, and a plurality of first sub-row wafers and a plurality of second sub-row wafers, thereby Form a two-dimensional array structure.

可以理解的,以上實施例僅表達了本發明的較佳實施方式,其描述較為具體和詳細,但並不能因此而理解為對本發明申請專利範圍的限制;應當指出的是,對於本發明所屬技術領域中具有通常知識者來說,在不脫離本發明構思的前提下,可以對上述技術特點進行自由組合,還可以做出若干變形和改進,這些都屬於本發明的保護範圍;因此,凡跟本發明申請專利範圍所做的均等變換與修飾,均應屬於本發明申請專利範圍的涵蓋範圍。It can be understood that the above embodiments only express the preferred embodiments of the present invention, and their descriptions are relatively specific and detailed, but they cannot be understood as limiting the patent scope of the present invention; it should be noted that, for the technology to which the present invention belongs, For those with ordinary knowledge in the field, the above technical features can be freely combined without departing from the concept of the present invention, and several modifications and improvements can be made, which all belong to the protection scope of the present invention; therefore, anything following Equal transformations and modifications made within the patentable scope of the present invention shall all fall within the scope of the patentable scope of the present invention.

(無)(without)

此處的圖式被併入說明書中並構成本說明書的一部分,示出了符合本案的實施例,並與說明書一起用於解釋本案的原理。The drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the present application.

為了更清楚地說明本案的技術方案,下面將對本案的描述中所需要使用的圖式作簡單地介紹,顯而易見地,對於本發明技術領域中具有通常知識者而言,在不過度實驗的前提下,還可以根據這些圖式獲得其他的圖式。In order to explain the technical solution of this case more clearly, the drawings needed to be used in the description of this case will be briefly introduced below. Obviously, for those with ordinary knowledge in the technical field of the present invention, without excessive experimentation, Below, other schemas can also be obtained based on these schemas.

圖1為本案一實施例提供的晶片轉移方法的流程圖;以及Figure 1 is a flow chart of a wafer transfer method provided by an embodiment of this case; and

圖2為本案一實施例提供的晶片轉移方法的操作示意圖。FIG. 2 is a schematic diagram of the operation of a wafer transfer method according to an embodiment of the present invention.

Claims (9)

一種晶片轉移方法,其包括:沿第一方向佈置第一排晶片,所述第一排晶片包括多個晶片;相對所述第一排晶片按預設第一預設間隔沿所述第一方向佈置第二排晶片,所述第二排晶片包括多個晶片;提取第一列晶片,所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片;沿第二方向佈置所述第一列晶片;提取第二列晶片,所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;以及相對所述第一列晶片按預設第二預設間隔沿所述第二方向佈置所述第二列晶片;其中,所述沿第一方向佈置第一排晶片包括:從晶圓上提取所述第一排晶片,其中所述晶圓包括以第一初始間隔排布的第一排晶片和第二排晶片;沿所述第一方向在所述第一料盤上佈置提取的所述第一排晶片;以及所述相對所述第一排晶片按預設第一預設間隔沿所述第一方向佈置第二排晶片包括:從所述晶圓上提取所述第二排晶片;相對所述第一排晶片按預設第一預設間隔沿所述第一方向在所述第一料盤上佈置提取的所述第二排晶片。 A wafer transfer method, which includes: arranging a first row of wafers along a first direction, the first row of wafers including a plurality of wafers; and relative to the first row of wafers at a preset first preset interval along the first direction. arranging a second row of wafers, the second row of wafers including a plurality of wafers; extracting a first row of wafers, the first row of wafers including at least one wafer from the first row of wafers and from the second row of wafers at least one wafer in the first row of wafers; arranging the first row of wafers in a second direction; extracting a second row of wafers, the second row of wafers including at least one remaining wafer from the first row of wafers and from the second row of wafers. at least one remaining wafer in the row of wafers; and arranging the second row of wafers along the second direction at a preset second preset interval relative to the first row of wafers; wherein the first row of wafers is arranged along the first direction. Arranging wafers includes: extracting the first row of wafers from a wafer, wherein the wafer includes a first row of wafers and a second row of wafers arranged at a first initial interval; Arranging the extracted first row of wafers on a tray; and arranging the second row of wafers at a preset first preset interval along the first direction relative to the first row of wafers includes: Extract the second row of wafers from above; arrange the extracted second row of wafers on the first material tray at a predetermined first preset interval along the first direction relative to the first row of wafers. 如請求項1所述的晶片轉移方法,其中,所述提取第一列晶片,所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片,沿第二方向佈置所述第一列晶片包括:從所述第一料盤上提取所述第一列晶片,其中所述第一料盤包括以第二初始間隔排布的第一列晶片和第二列晶片,所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片;沿所述第二方向在第四料盤上佈置提取的所述第一列晶片;以及所述提取所述第二列晶片,所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;相對所述第一列晶片按預設第二預設間隔沿所述第二方向佈置所述第二列晶片包括:從所述第一料盤上提取所述第二列晶片;所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;相對所述第一列晶片按預設第二預設間隔沿所述第二方向在所述第四料盤上佈置提取的所述第二列晶片。 The wafer transfer method according to claim 1, wherein the first column of wafers is extracted, and the first column of wafers includes at least one wafer from the first row of wafers and a wafer from the second row of wafers. At least one wafer, arranging the first row of wafers in the second direction includes: extracting the first row of wafers from the first tray, wherein the first tray includes a first row of wafers arranged at a second initial spacing. A row of wafers and a second row of wafers, the first row of wafers including at least one wafer from the first row of wafers and at least one wafer from the second row of wafers; arranging the extracted first row of wafers on four trays; and extracting the second row of wafers, the second row of wafers including at least one remaining wafer from the first row of wafers and the remaining wafers from the first row of wafers. At least one wafer remaining in the two rows of wafers; arranging the second row of wafers in the second direction at a preset second preset interval relative to the first row of wafers includes: extracting all the wafers from the first tray The second row of wafers; the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; relative to the first row of wafers in a predetermined Arrange the extracted second row of wafers on the fourth tray along the second direction at a second preset interval. 如請求項1所述的晶片轉移方法,其中,所述沿第一方向佈置第一排晶片包括:從第二料盤上提取所述第一排晶片,其中所述第二料盤包括以第一初始間隔排布的第一排晶片和第二排晶片;沿所述第一方向在第三料盤上佈置提取的所述第一排晶片;以及所述相對所述第一排晶片按預設第一預設間隔沿所述第一方向佈置第二排晶片包括:從所述第二料盤上提取所述第二排晶片;相對所述第一排晶片按預設第一預設間隔沿所述第一方向在所述第三料盤上佈置所述第二排晶片。 The wafer transfer method of claim 1, wherein arranging the first row of wafers in the first direction includes: extracting the first row of wafers from a second material tray, wherein the second material tray includes: a first row of wafers and a second row of wafers initially arranged at intervals; arranging the extracted first row of wafers on a third tray along the first direction; Arranging the second row of wafers along the first direction with a first preset interval includes: extracting the second row of wafers from the second tray; and maintaining a first preset interval with respect to the first row of wafers. The second row of wafers is arranged on the third tray along the first direction. 如請求項3所述的晶片轉移方法,其中,所述提取第一列晶片,所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片,沿第二方向佈置所述第一列晶片包括:從所述第三料盤上提取所述第一列晶片,其中所述第三料盤包括以第二初始間隔排布的第一列晶片和第二列晶片;所述第一列晶片包括來自所述第一排晶片中的至少一個晶片和來自所述第二排晶片中的至少一個晶片;沿所述第二方向在第五料盤上佈置提取的所述第一列晶片;以及所述提取所述第二列晶片,所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;相對所述第一列晶片按預設第二預設間隔沿所述第二方向佈置所述第二列晶片包括:從所述第三料盤上提取所述第二列晶片;所述第二列晶片包括來自所述第一排晶片中剩餘的至少一個晶片和來自所述第二排晶片中剩餘的至少一個晶片;相對所述第一列晶片按預設第二預設間隔沿所述第二方向在所述第五料盤上佈置所述第二列晶片。 The wafer transfer method according to claim 3, wherein the first column of wafers is extracted, and the first column of wafers includes at least one wafer from the first row of wafers and a wafer from the second row of wafers. At least one wafer, arranging the first row of wafers in the second direction includes: extracting the first row of wafers from the third tray, wherein the third tray includes a third row of wafers arranged at a second initial spacing. One row of wafers and a second row of wafers; the first row of wafers includes at least one wafer from the first row of wafers and at least one wafer from the second row of wafers; arranging the extracted first row of wafers on a five-material tray; and extracting the second row of wafers, the second row of wafers including at least one remaining wafer from the first row of wafers and the remaining wafers from the first row of wafers. At least one wafer remaining in the two rows of wafers; arranging the second row of wafers in the second direction at a preset second preset interval relative to the first row of wafers includes: extracting all the wafers from the third tray The second row of wafers; the second row of wafers includes at least one remaining wafer from the first row of wafers and at least one remaining wafer from the second row of wafers; relative to the first row of wafers in a predetermined Arrange the second row of wafers on the fifth tray along the second direction with a second preset interval. 如請求項1至4中任一項所述的晶片轉移方法,其中,所述第一初始間隔小於所述第一預設間隔。 The wafer transfer method according to any one of claims 1 to 4, wherein the first initial interval is smaller than the first preset interval. 如請求項2或4所述的晶片轉移方法,其中,所述第二初始間隔小於所述第二預設間隔。 The wafer transfer method according to claim 2 or 4, wherein the second initial interval is smaller than the second preset interval. 如請求項1所述的晶片轉移方法,其中,所述第一方向與所述第二方向之間具有第一預設角度,所述第一預設角度介於0°至180°之間。 The wafer transfer method according to claim 1, wherein there is a first preset angle between the first direction and the second direction, and the first preset angle is between 0° and 180°. 如請求項7所述的晶片轉移方法,其中,所述第一方向與所述第二方向互相垂直。 The wafer transfer method according to claim 7, wherein the first direction and the second direction are perpendicular to each other. 如請求項1所述的晶片轉移方法,其中,所述晶片轉移方法包括:沿所述第一方向佈置第一排晶片,所述第一排晶片包括多個第一子排晶片,所述第一子排晶片包括多個晶片;相對所述第一排晶片按預設第一預設間隔沿所述第一方向佈置第二排晶片,所述第二排晶片包括多個第二子排晶片,所述第二子排晶片包括多個晶片;提取第一列晶片,所述第一列晶片包括多個第一子列晶片,所述第一子列晶片包括來自所述第一子排晶片中的至少一個晶片和來自所述第二子排晶片中的至少一個晶片;沿所述第二方向佈置所述第一列晶片;提取所述第二列晶片,所述第二列晶片包括多個第二子列晶片,所述第二子列晶片包括來自所述第一子排晶片中剩餘的至少一個晶片和來自所述第二子排晶片中剩餘的至少一個晶片;以及相對所述第一列晶片按預設第二預設間隔沿所述第二方向佈置所述第二列晶片。 The wafer transfer method according to claim 1, wherein the wafer transfer method includes: arranging a first row of wafers along the first direction, the first row of wafers including a plurality of first sub-row wafers, and the first row of wafers. A sub-row of wafers includes a plurality of wafers; a second row of wafers is arranged along the first direction at a predetermined first preset interval relative to the first row of wafers, and the second row of wafers includes a plurality of second sub-row wafers. , the second sub-row of wafers includes a plurality of wafers; extracting a first row of wafers, the first row of wafers includes a plurality of first sub-row wafers, the first sub-row of wafers includes wafers from the first sub-row and at least one wafer from the second sub-row of wafers; arranging the first row of wafers along the second direction; extracting the second row of wafers, the second row of wafers including a plurality of a second sub-row of wafers, the second sub-row of wafers including at least one remaining wafer from the first sub-row of wafers and at least one remaining wafer from the second sub-row of wafers; and relative to the first sub-row of wafers; A row of wafers arranges the second row of wafers along the second direction at a predetermined second preset interval.
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