TWI822300B - Semiconductor deposition system and operation method of the same - Google Patents

Semiconductor deposition system and operation method of the same Download PDF

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TWI822300B
TWI822300B TW111133519A TW111133519A TWI822300B TW I822300 B TWI822300 B TW I822300B TW 111133519 A TW111133519 A TW 111133519A TW 111133519 A TW111133519 A TW 111133519A TW I822300 B TWI822300 B TW I822300B
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equipment
deposition
unit
chambers
sensing
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TW202312260A (en
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金玟秀
趙成晤
金起範
南元佑
金宣佑
金泳憲
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南韓商韓華有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00Programme-control systems
    • G05B19/02Programme-control systems electric
    • G05B19/418Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00Testing or monitoring of control systems or parts thereof
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    • GPHYSICS
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    • G05B23/02Electric testing or monitoring
    • G05B23/0205Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0259Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterized by the response to fault detection
    • G05B23/0283Predictive maintenance, e.g. involving the monitoring of a system and, based on the monitoring results, taking decisions on the maintenance schedule of the monitored system; Estimating remaining useful life [RUL]
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Abstract

A semiconductor deposition system according to an embodiment of the present invention includes: an operation distribution device for establishing a distribution plan for unit operations based on equipment information and distributing the unit operations; a deposition facility for allocating the unit operation to a plurality of chambers based on the distribution plan established by the operation distribution device; a sensing device for detecting the state of the deposition equipment and generating state data; and a control device for generating the facility information on the deposition facility based on the state data, wherein the distribution plan includes contents corresponding to the unit operations for each of the plurality of chambers.

Description

半導體沉積系統及其操作方法Semiconductor deposition system and method of operating the same

本發明的實施例涉及半導體沉積系統及其操作方法,尤其涉及一種通過在半導體沉積設備的各生產線上適用故障預測算法,並基於沉積設備的異常信號及主要部件的有效壽命,能夠實時地優化生產計劃的半導體沉積系統及其操作方法。 Embodiments of the present invention relate to semiconductor deposition systems and operating methods, and in particular to a system that can optimize production in real time by applying fault prediction algorithms to each production line of semiconductor deposition equipment and based on abnormal signals of the deposition equipment and the effective life of major components. Planned semiconductor deposition system and method of operation thereof.

半導體薄膜可通過各種方式生成。例如,利用化學方法形成絕緣膜(或者金屬膜)等的化學沉積方法(Chemical Vapor Deposition,CVD)、利用物理方法形成金屬膜的物理沉積方法(Physical Vapor Deposition,PVD)、通過旋轉利用氧氣的氧化膜及用於噴塗有膜形成用溶液的晶圓而形成的旋塗式玻璃法(Spin on Glass,SOG)以及將溶液分解並進行電鍍形成銅模的鑲嵌(damascene)方式等。 Semiconducting thin films can be produced in various ways. For example, Chemical Vapor Deposition (CVD) that uses chemical methods to form an insulating film (or metal film), etc., Physical Vapor Deposition (PVD) that uses physical methods to form a metal film, and oxidation using oxygen through rotation. Films and spin-on-glass (SOG) methods are used to spray wafers coated with a film-forming solution, and damascene methods are used to decompose the solution and perform electroplating to form a copper mold.

最近正在採用能夠同時滿足膜的厚度和可靠性的原子層沉積(Atomic Layer Deposition,ALD)技術。 Recently, atomic layer deposition (ALD) technology, which can satisfy both film thickness and reliability, is being adopted.

原子層沉積不是類似於PVD的物理方式,而是類似於CVD的化學方式,按照順序依次提供輸入原料,使單原子(或者分子)層在每一個週期內 形成一個原子層(Mono Layer,ML)的方法。此時,原子層具有通過吸附方式很容易吸附在縫隙或者溝槽的壁面的特徵。 Atomic layer deposition is not a physical method similar to PVD, but a chemical method similar to CVD. Input raw materials are provided in sequence, so that the single atom (or molecule) layer is deposited in each cycle. A method of forming a Mono Layer (ML). At this time, the atomic layer has the characteristic of being easily adsorbed on the wall of the gap or trench through adsorption.

例如,原子層沉積通過以下方式進行:將1次原料(前驅體)放入腔室內並在其表面觸發吸附,之後將2次原料(反應物體)放入腔室,與1次原料發生化學替換,最終生成第三新物質(膜)。 For example, atomic layer deposition is performed by placing the primary raw material (precursor) into the chamber and triggering adsorption on its surface, and then placing the secondary raw material (reactive object) into the chamber to chemically replace it with the primary raw material. , and finally generate the third new substance (membrane).

用於執行上述原子層沉積的設備(即,ALD設備)將由上層系統(例如,企業資源計劃(Enterprise Resource Planning,ERP)等)請求的任務(task)分別分發給多個腔室。ALD設備確認腔室狀態並不向狀態異常的腔室分發任務。 The equipment used to perform the above-mentioned atomic layer deposition (ie, ALD equipment) distributes tasks requested by an upper-level system (eg, Enterprise Resource Planning (ERP), etc.) to multiple chambers respectively. The ALD device confirms the chamber status and does not distribute tasks to chambers with abnormal status.

但是,就現有方式而言,由於設備本身不能夠確認腔室狀態並分發任務,因此導致生產線中斷等非效率性增加,存在生產效率低的問題。 However, with the existing method, since the equipment itself cannot confirm the chamber status and distribute tasks, it leads to an increase in inefficiency such as production line interruption, and there is a problem of low production efficiency.

因此,亟需一種基於沉積設備的異常信號及主要部件的有效壽命且能夠實時地優化生產計劃的半導體沉積系統及其操作方法。 Therefore, there is an urgent need for a semiconductor deposition system and its operating method that can optimize production plans in real time based on abnormal signals of deposition equipment and the effective life of major components.

[在先技術文獻] [Prior technical documents]

[專利文獻] [Patent Document]

(專利文獻1) 日本公開專利第2021-60929號「生產可視化系統」(2021年04月15日公開) (Patent Document 1) Japanese Patent Publication No. 2021-60929 "Production Visualization System" (published on April 15, 2021)

(專利文獻2) 日本公開專利第2020-197912號「生產監控裝置、生產監控系統、生產監控方法及程序」(2020年12月10日公開) (Patent document 2) Japanese Patent Publication No. 2020-197912 "Production monitoring device, production monitoring system, production monitoring method and program" (published on December 10, 2020)

有鑑於此,吾等發明人乃潛心進一步研究半導體沉積系統,並著手進行研發及改良,期以一較佳發明以解決上述問題,且在經過不斷試驗及修改後而有本發明之問世。 In view of this, our inventors devoted themselves to further research on the semiconductor deposition system, and began to carry out research and development and improvement, hoping to solve the above problems with a better invention, and after continuous testing and modification, the present invention was born.

本發明的目的在於,提供一種通過在半導體沉積設備的各生產線適用故障預測算法,且基於沉積設備的異常信號及主要部件的有效壽命,能夠實時地優化生產計劃的半導體沉積系統及其操作方法。 An object of the present invention is to provide a semiconductor deposition system and its operating method that can optimize production plans in real time by applying a fault prediction algorithm to each production line of semiconductor deposition equipment and based on abnormal signals of the deposition equipment and the effective life of major components.

本發明的另一個目的在於,提供一種能夠以腔室為單位管理及分配任務的半導體沉積系統及其操作方法。 Another object of the present invention is to provide a semiconductor deposition system and an operating method thereof that can manage and allocate tasks on a chamber basis.

本發明的又一個目的在於,提供一種使沉積設備持續生產,能夠最小化設備虧損且最大化生產量的半導體沉積系統及其操作方法。 Another object of the present invention is to provide a semiconductor deposition system and an operating method thereof that enable continuous production of deposition equipment, minimize equipment losses, and maximize production throughput.

本發明的又一個目的在於,提供一種通過預先計算設備的修理時間,能夠最小化運營維護費用的半導體沉積系統及其操作方法。 Another object of the present invention is to provide a semiconductor deposition system and an operating method thereof that can minimize operation and maintenance costs by calculating the repair time of the equipment in advance.

根據本發明實施例的半導體沉積系統,包括:任務分配裝置,其基於設備信息對單位任務樹立分配計劃,並分配所述單位任務;沉積設備,其基於由所述任務分配裝置樹立的所述分配計劃,將所述單位任務分發至多個腔室;感測裝置,其通過感測所述沉積設備的狀態生成狀態數據;以及控制裝置,其基於所述狀態數據,生成針對所述沉積設備的所述設備信息,所述分配計劃包括所述單位任務分別對應各個所述多個腔室的內容。 A semiconductor deposition system according to an embodiment of the present invention includes: a task allocation device that establishes an allocation plan for unit tasks based on equipment information and allocates the unit tasks; and a deposition equipment that is based on the allocation established by the task allocation device. a plan that distributes the unit tasks to a plurality of chambers; a sensing device that generates status data by sensing the status of the deposition equipment; and a control device that generates all the parameters for the deposition equipment based on the status data. The equipment information is provided, and the distribution plan includes the content of each of the unit tasks corresponding to each of the plurality of chambers.

此外,所述設備信息包括設備故障信息及設備修理信息中的至少一個,所述設備故障信息包括所述沉積設備及各個所述多個腔室的故障發生與否及故障預測結果,所述設備修理信息包括用於修理所述故障的修理時間。 In addition, the equipment information includes at least one of equipment failure information and equipment repair information. The equipment failure information includes whether a failure occurs and a failure prediction result of the deposition equipment and each of the plurality of chambers. The equipment The repair information includes the repair time to repair the fault.

此外,所述任務分配裝置基於所述設備信息,並利用任務分配優化及調度算法,實時地樹立並修改所述分配計劃。 In addition, the task allocation device establishes and modifies the allocation plan in real time based on the equipment information and using task allocation optimization and scheduling algorithms.

此外,所述任務分配裝置樹立所述分配計劃,當所述沉積設備發生故障或者預測到將發生故障時,在所述修理時間期間不向對應的沉積設備分配所述單位任務,且所述任務分配裝置樹立所述分配計劃,當所述多個腔室中任意一個中發生故障或者預測到將發生故障時,在所述修理時間期間不向對應的腔室分配所述單位任務。 In addition, the task allocation device establishes the allocation plan, and when the deposition equipment fails or is predicted to fail, the unit task is not allocated to the corresponding deposition equipment during the repair time, and the task The allocation device establishes the allocation plan, and when a failure occurs or is predicted to occur in any one of the plurality of chambers, the unit task is not allocated to the corresponding chamber during the repair time.

此外,所述多個腔室分別包括阱及泵。 Additionally, each of the plurality of chambers includes a well and a pump.

此外,所述感測裝置包括:設備感測單元,其用於感測所述沉積設備的狀態;阱感測單元,其用於感測各個所述多個腔室的阱的狀態;以及泵感測單元,其用於感測各個所述多個腔室的泵的狀態。 Furthermore, the sensing device includes: an equipment sensing unit for sensing a state of the deposition equipment; a well sensing unit for sensing a state of a well of each of the plurality of chambers; and a pump A sensing unit configured to sense the status of the pump in each of the plurality of chambers.

此外,所述控制裝置包括:故障判斷單元,其用於判斷所述沉積設備及各個所述多個腔室的故障與否;故障預測單元,其用於預測所述沉積設備及各個所述多個腔室的故障發生;以及修理時間計算單元,其用於計算修理所述故障所用的所述修理時間。 In addition, the control device includes: a fault judgment unit for judging whether the deposition equipment and each of the plurality of chambers are faulty; a fault prediction unit for predicting whether the deposition equipment and each of the plurality of chambers are faulty. A fault occurs in a chamber; and a repair time calculation unit is used to calculate the repair time used to repair the fault.

此外,所述故障判斷單元在所述多個腔室中任意一個對應的阱以及對應的泵中的至少一個發生故障時,判斷為對應腔室中發生故障。 In addition, the fault determination unit determines that a fault occurs in the corresponding chamber when at least one of the corresponding well and the corresponding pump in any one of the plurality of chambers fails.

此外,所述故障預測單元基於所述狀態數據,利用人工智慧模型,導出部件的剩餘有效壽命,並基於所述剩餘有效壽命預測故障的發生。 In addition, the fault prediction unit uses an artificial intelligence model to derive the remaining effective life of the component based on the status data, and predicts the occurrence of a failure based on the remaining effective life.

此外,所述沉積設備為原子層沉積設備。 Furthermore, the deposition equipment is an atomic layer deposition equipment.

此外,所述感測裝置感測所述沉積設備的狀態至少兩次,且通過綜合感測結果生成所述狀態數據。 Furthermore, the sensing device senses the state of the deposition equipment at least twice, and generates the state data by integrating sensing results.

根據本發明實施例的半導體沉積系統的操作方法,包括以下步驟:任務分配裝置基於設備信息對單位任務樹立分配計劃,並分配所述單位任務;沉積設備基於由所述任務分配裝置樹立的所述分配計劃,將所述單位任務分發至多個腔室;所述多個腔室執行所述單位任務;感測裝置通過感測所述沉積設備的狀態生成狀態數據;以及控制裝置基於所述狀態數據,生成針對所述沉積設備的所述設備信息,所述分配計劃包括所述單位任務分別對應各個所述多個腔室的內容。 The operating method of a semiconductor deposition system according to an embodiment of the present invention includes the following steps: a task allocation device establishes an allocation plan for unit tasks based on equipment information, and allocates the unit tasks; the deposition equipment is based on the task allocation plan established by the task allocation device. a distribution plan that distributes the unit task to a plurality of chambers; the plurality of chambers execute the unit task; a sensing device generates status data by sensing a status of the deposition equipment; and a control device based on the status data , generating the equipment information for the deposition equipment, and the distribution plan includes content that the unit tasks respectively correspond to each of the plurality of chambers.

此外,所述設備信息包括設備故障信息及設備修理信息中的至少一個,所述設備故障信息包括所述沉積設備及各個所述多個腔室的故障發生與否以及故障預測結果,所述設備修理信息包括用於修理所述故障的修理時間。 In addition, the equipment information includes at least one of equipment failure information and equipment repair information, and the equipment failure information includes whether failures of the deposition equipment and each of the plurality of chambers have occurred and failure prediction results. The repair information includes the repair time to repair the fault.

此外,樹立所述分配計劃並分配所述單位任務的步驟,包括:所述任務分配裝置基於所述設備信息,確認所述沉積設備是否發生故障以及是否預測到故障;以及當所述沉積設備發生故障或者預測到將發生故障時,從分配對象中排除對應的沉積設備。 In addition, the step of establishing the allocation plan and allocating the unit tasks includes: the task allocation device confirms whether the deposition equipment fails and whether the failure is predicted based on the equipment information; and when the deposition equipment fails When a failure occurs or a failure is predicted to occur, the corresponding deposition equipment is excluded from the allocation objects.

此外,樹立所述分配計劃並分配所述單位任務的步驟,包括:所述任務分配裝置基於所述設備信息,確認所述多個腔室是否發生故障以及是否預測到故障;當所述多個腔室中的至少一個發生故障或者預測到將發生故障時,所述任務分配裝置從分配對象中排除對應的腔室;以及所述任務分配裝置基於所述分配對象樹立所述分配計劃,並分配所述單位任務。 In addition, the step of establishing the allocation plan and allocating the unit tasks includes: the task allocation device confirms whether a failure occurs in the multiple chambers and whether a failure is predicted based on the equipment information; when the multiple chambers When at least one of the chambers fails or is predicted to fail, the task allocation device excludes the corresponding chamber from the allocation object; and the task allocation device establishes the allocation plan based on the allocation object, and allocates Said unit mission.

此外,通過感測所述沉積設備的狀態生成狀態數據的步驟中,所述感測裝置感測所述沉積設備的狀態至少兩次,並通過綜合感測結果生成狀態數據。 Furthermore, in the step of generating status data by sensing the status of the deposition equipment, the sensing device senses the status of the deposition equipment at least twice, and generates status data by integrating the sensing results.

本發明的半導體沉積系統及其操作方法通過在半導體沉積設備的各生產線中適用故障預測算法,基於沉積設備的異常信號及主要部件的有效壽命,可實時地優化生產計劃。 The semiconductor deposition system and its operating method of the present invention can optimize the production plan in real time based on the abnormal signals of the deposition equipment and the effective life of the main components by applying a fault prediction algorithm in each production line of the semiconductor deposition equipment.

此外,本發明的半導體沉積系統及其操作方法具有可根據腔室單位管理及分配任務的效果。 In addition, the semiconductor deposition system and its operating method of the present invention have the effect of being able to manage and allocate tasks according to chamber units.

此外,本發明的半導體沉積系統及其操作方法通過沉積設備持續生產,可具有最小化設備虧損且最大化生產量的效果。 In addition, the semiconductor deposition system and its operating method of the present invention can continuously produce through the deposition equipment, which can have the effect of minimizing equipment losses and maximizing production throughput.

此外,本發明的半導體沉積系統及其操作方法通過預先計算設備的修理時間,具有可最小化運營維護費用的效果。 In addition, the semiconductor deposition system and its operating method of the present invention have the effect of minimizing operation and maintenance costs by calculating the repair time of the equipment in advance.

此外,本發明的半導體沉積系統及其操作方法通過感測至少一次,具有能夠提升感測結果的可靠性的效果。 In addition, the semiconductor deposition system and its operating method of the present invention have the effect of improving the reliability of the sensing results by sensing at least once.

〔本發明〕 [Invention]

10:半導體沉積系統 10:Semiconductor deposition system

100:任務分配裝置 100:Task distribution device

20:資源管理系統 20:Resource management system

200:沉積設備 200:Deposition equipment

210:第一沉積設備 210: First deposition equipment

220:第二沉積設備 220: Second deposition equipment

300:腔室 300: Chamber

310:第一腔室 310:First chamber

320:第二腔室 320: Second chamber

330:第三腔室 330:Third chamber

340:第四腔室 340:Fourth chamber

400:感測裝置 400: Sensing device

410:設備感測單元 410: Device sensing unit

420:阱感測單元 420: Trap sensing unit

430:泵感測單元 430: Pump sensing unit

500:控制裝置 500:Control device

510:故障判斷單元 510:Fault judgment unit

520:故障預測單元 520:Fault prediction unit

530:時間計算單元 530: Time calculation unit

S10、S20、S30、S40、S50、S60:步驟 S10, S20, S30, S40, S50, S60: steps

[圖1]是根據本發明實施例的半導體沉積系統的示意圖;[圖2]是根據本發明實施例的半導體沉積系統的操作方法的示意圖;[圖3]是根據本發明實施例的半導體沉積系統的操作方法的示意圖;[圖4]是根據本發明實施例的感測裝置的示意圖;[圖5]是根據本發明實施例的控制裝置的示意圖;[圖6]是根據本發明實施例的半導體沉積系統的操作方法的流程圖;[圖7]是根據本發明實施例的半導體沉積系統的操作方法的詳細流程圖。 [Fig. 1] is a schematic diagram of a semiconductor deposition system according to an embodiment of the present invention; [Fig. 2] is a schematic diagram of an operating method of a semiconductor deposition system according to an embodiment of the present invention; [Fig. 3] is a schematic diagram of a semiconductor deposition system according to an embodiment of the present invention A schematic diagram of the operating method of the system; [Fig. 4] is a schematic diagram of a sensing device according to an embodiment of the present invention; [Fig. 5] is a schematic diagram of a control device according to an embodiment of the present invention; [Fig. 6] is a schematic diagram of a control device according to an embodiment of the present invention; A flow chart of an operating method of a semiconductor deposition system; [Fig. 7] is a detailed flow chart of an operating method of a semiconductor deposition system according to an embodiment of the present invention.

關於吾等發明人之技術手段,茲舉數種較佳實施例配合圖式於下文進行詳細說明,俾供 鈞上深入瞭解並認同本發明。 Regarding the technical means of our inventors, several preferred embodiments are described in detail below along with the drawings, so as to provide readers with a thorough understanding and recognition of the present invention.

下面進一步詳細說明本發明。 The present invention is described in further detail below.

下面參考附圖詳細闡述本發明的實施例以及為了使本領域普通技術人員容易理解本發明內容所需的事項。然而,本發明可以在權利要求記載範圍內以各種形態實施,因此下面闡述的實施例僅為示例性的,與其表達方式無關。 The embodiments of the present invention and matters required to make the contents of the present invention easy to be understood by those of ordinary skill in the art will be described in detail below with reference to the accompanying drawings. However, the present invention can be implemented in various forms within the scope of the claims, and therefore the embodiments described below are merely exemplary and have nothing to do with their expression.

相同的附圖標記表示相同的構件,在附圖中,為了有效地說明本發明技術內容,會誇大構件的厚度、比率和尺寸。「和/或」可包括由相關聯的構件定義的至少一個組合的全部。 The same reference numerals represent the same components, and in the drawings, the thickness, ratio, and size of the components are exaggerated in order to effectively illustrate the technical content of the present invention. "And/or" may include all of at least one combination defined by the associated member.

儘管在此可使用術語第一、第二等來描述各種構件,但是這些構件不受限於這些術語。這些術語用於將一個構件與另一構件區分開。例如,在不超出本發明的權利範圍的情況下,第一構件可命名為第二構件,類似地第二構件也可命名為第一構件。前後文中如果沒有明確地其他說明,則單數的表述可包括複數。 Although the terms first, second, etc. may be used herein to describe various components, these components are not limited by these terms. These terms are used to distinguish one component from another component. For example, without exceeding the scope of rights of the present invention, the first component may be named the second component, and similarly the second component may also be named the first component. Expressions in the singular may include the plural unless the context clearly indicates otherwise.

此外,「在......之下」、「在......下方」、「在......上方」和「在......之上」等術語,是為了說明附圖中圖示的構件之間的連接關係而使用的。上述術語作為相對概念,將以附圖所示的方向作為基準進行說明。 In addition, the terms "under", "under", "above" and "on", It is used to explain the connection relationship between the components shown in the drawings. The above terms are relative concepts and will be explained based on the directions shown in the drawings.

「包括」、「具有」等術語應理解為用於指出說明書中所記載的特徵、數字、步驟、操作、構件、部件和/或它們的組合的存在,而非用於預先 排除一個或更多個其它特徵、數字、步驟、操作、構件、部件或它們的組合的存在或者附加可能性。 Terms such as "comprises" and "having" should be understood as indicating the existence of the features, numbers, steps, operations, components, parts and/or combinations described in the specification, and are not used to predict the existence of The presence or possibility of addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof is excluded.

即,本發明並非限於下面公開的實施例,而可以各種不同的方式實施,下面說明中,如果記載為某個部分與其他部分連接,這不僅包括直接連接的情況,而且還包括中間夾設其他元件電性連接的情況。此外,需要說明的是,附圖中相同的構件在其他附圖中表示時,也儘可能使用了相同的參考番號和符號。 That is, the present invention is not limited to the embodiments disclosed below, but can be implemented in various ways. In the following description, if it is described that a certain part is connected to other parts, this includes not only the case of direct connection, but also the case where other parts are interposed. The condition of electrical connection of components. In addition, it should be noted that when the same components in the drawings are represented in other drawings, the same reference numbers and symbols are used as much as possible.

圖1是根據本發明實施例的半導體沉積系統10的示意圖。 FIG. 1 is a schematic diagram of a semiconductor deposition system 10 according to an embodiment of the present invention.

參照圖1,半導體沉積系統10可包括任務分配裝置100、沉積設備200、腔室300、感測裝置400及控制裝置500。 Referring to FIG. 1 , the semiconductor deposition system 10 may include a task allocation device 100 , a deposition equipment 200 , a chamber 300 , a sensing device 400 and a control device 500 .

任務分配裝置100可從外部系統(例如,企業資源計劃(Enterprise Resource Planning,ERP)系統)接收用於半導體沉積工藝的單位任務TSK。但是,本發明並不受限於此,任務分配裝置100可從各種系統或者管理員裝置接收單位任務TSK。本說明書中單位任務TSK可指用於執行原子層沉積工藝端的沉積任務。 The task allocation device 100 may receive the unit task TSK for the semiconductor deposition process from an external system (eg, an Enterprise Resource Planning (ERP) system). However, the present invention is not limited thereto, and the task allocation device 100 may receive the unit task TSK from various systems or administrator devices. The unit task TSK in this specification may refer to the deposition task used to perform the atomic layer deposition process end.

任務分配裝置100可基於設備信息MCI對單位任務TSK樹立分配計劃。此時,分配計劃可包括單位任務TSK分別對應各個多個腔室300的內容。即,分配計劃可包括對各個單位任務TSK的分配且與待執行的沉積設備200對應的各個多個腔室300的內容。 The task allocation device 100 can establish an allocation plan for the unit task TSK based on the equipment information MCI. At this time, the distribution plan may include content that the unit task TSK corresponds to each of the plurality of chambers 300 . That is, the allocation plan may include allocation of each unit task TSK and contents of each plurality of chambers 300 corresponding to the deposition apparatus 200 to be executed.

任務分配裝置100可根據分配計劃分配單位任務TSK。例如,任務分配裝置100可將單位任務TSK分配給沉積設備200的同時將分配計劃一起發送。 The task allocation device 100 can allocate unit tasks TSK according to the allocation plan. For example, the task allocation device 100 may allocate the unit task TSK to the deposition equipment 200 and send the allocation plan together.

沉積設備200可基於由任務分配裝置100樹立的分配計劃,將單位任務TSK分發給多個腔室300。 The deposition apparatus 200 may distribute the unit task TSK to the plurality of chambers 300 based on the distribution plan established by the task distribution device 100 .

根據實施例,沉積設備200可以是原子層沉積(Atomic Layer Deposition,ALD)設備。例如,沉積設備200可包括用於執行原子層沉積工藝的單位任務TSK的多個腔室300。此時,腔室300可以是用於執行半導體沉積工藝的處理腔室。 According to an embodiment, the deposition apparatus 200 may be an atomic layer deposition (ALD) apparatus. For example, the deposition apparatus 200 may include a plurality of chambers 300 for performing unit tasks TSK of an atomic layer deposition process. At this time, the chamber 300 may be a processing chamber for performing a semiconductor deposition process.

根據實施例,腔室300可包括用於執行原子層沉積工藝的阱及泵(例如,真空泵)。此時,阱可佈置在原子層沉積設備的排出口與真空泵之間。為了防止真空泵受損,阱可去除流出物(outflow)中未反應的前驅體。 According to embodiments, chamber 300 may include a well and a pump (eg, a vacuum pump) for performing an atomic layer deposition process. At this time, the trap may be arranged between the discharge port of the atomic layer deposition apparatus and the vacuum pump. To prevent damage to the vacuum pump, the trap removes unreacted precursors from the outflow.

感測裝置400可通過感測沉積設備200的狀態生成狀態數據SDT。根據實施例,感測裝置400可以為配置在沉積設備200上的傳感器。本說明書中,感測裝置400感測沉積設備200的狀態可指還感測沉積設備200中包括的多個腔室300的狀態。 The sensing device 400 may generate status data SDT by sensing the status of the deposition apparatus 200 . According to embodiments, the sensing device 400 may be a sensor configured on the deposition apparatus 200 . In this specification, the sensing device 400 sensing the state of the deposition apparatus 200 may refer to also sensing the states of the plurality of chambers 300 included in the deposition apparatus 200.

控制裝置500可基於狀態數據SDT生成沉積設備200有關的設備信息MCI。此時,設備信息MCI可包括設備故障信息及設備修理信息中的至少一個。設備故障信息可包括沉積設備200及各個多個腔室300的故障發生與否以及故障預測結果。設備修理信息可包括用於修理所述故障的修理時間。 The control device 500 may generate equipment information MCI related to the deposition equipment 200 based on the status data SDT. At this time, the equipment information MCI may include at least one of equipment failure information and equipment repair information. The equipment failure information may include whether a failure occurs in the deposition equipment 200 and each of the plurality of chambers 300 as well as failure prediction results. Equipment repair information may include repair times to repair the fault.

根據實施例,任務分配裝置100可基於設備信息MCI,利用任務分配優化及調度算法,實時地樹立和修改分配計劃。任務分配優化算法可以是一種基於任務類型、任務所需時間、任務特性,將任務施加到最優的腔室並執行的分配算法。調度算法可以是根據時間將任務調度(scheduling)至可用的腔室的算法。 According to embodiments, the task allocation device 100 can establish and modify the allocation plan in real time based on the device information MCI and using task allocation optimization and scheduling algorithms. The task allocation optimization algorithm can be an allocation algorithm that applies tasks to the optimal chamber and executes them based on task type, task required time, and task characteristics. The scheduling algorithm may be an algorithm that schedules tasks to available chambers based on time.

例如,任務分配裝置100可樹立分配計劃,當沉積設備200發生故障或者預測到將發生故障時,在修理時間期間不向對應的沉積設備200分配單位任務TSK。圖2中將對與其相關的詳細內容進行說明。 For example, the task allocation device 100 may establish an allocation plan so that when the deposition equipment 200 fails or is predicted to fail, the unit task TSK is not allocated to the corresponding deposition equipment 200 during the repair time. Details related to this will be explained in Figure 2 .

任務分配裝置100可樹立分配計劃,當多個腔室300中任意一個發生故障或者預測到將發生故障時,在修理時間期間不向對應的腔室分配單位任務TSK。圖3中將對與其相關的詳細內容進行說明。 The task allocation device 100 can establish an allocation plan, and when any one of the plurality of chambers 300 fails or is predicted to fail, the unit task TSK is not allocated to the corresponding chamber during the repair time. Details related to this will be explained in Figure 3 .

圖2是根據本發明實施例的半導體沉積系統10的操作方法的示意圖。 FIG. 2 is a schematic diagram of an operating method of the semiconductor deposition system 10 according to an embodiment of the present invention.

具體地,圖2對沉積設備200發生故障或者預測到將發生故障時的任務分配裝置100的操作進行說明。 Specifically, FIG. 2 illustrates the operation of the task allocation device 100 when the deposition equipment 200 fails or is predicted to fail.

參照圖1和圖2,半導體沉積系統10可包括任務分配裝置100、第一沉積設備210、第二沉積設備220、第一腔室310、第二腔室320、第三腔室330、第四腔室340、感測裝置400及控制裝置500。 Referring to FIGS. 1 and 2 , the semiconductor deposition system 10 may include a task allocation device 100 , a first deposition device 210 , a second deposition device 220 , a first chamber 310 , a second chamber 320 , a third chamber 330 , a fourth Chamber 340, sensing device 400 and control device 500.

任務分配裝置100接收半導體沉積工藝所需的單位任務TSK,並基於設備信息MCI對單位任務TSK樹立分配計劃。 The task allocation device 100 receives the unit tasks TSK required for the semiconductor deposition process, and establishes an allocation plan for the unit tasks TSK based on the equipment information MCI.

下面,假設第一沉積設備210發生故障或者預測到將發生故障的情況進行說明。 In the following, description will be given assuming that the first deposition apparatus 210 fails or is predicted to fail.

感測裝置400可通過感測第一沉積設備210的狀態,並生成狀態數據SDT。 The sensing device 400 may sense the status of the first deposition device 210 and generate status data SDT.

控制裝置500可基於狀態數據SDT,生成針對第一沉積設備210的設備信息MCI。此時,設備信息MCI可包括設備故障信息,用於顯示第一沉積設 備210發生故障或者預測到故障。此外,設備信息MCI可包括設備修理信息,用於顯示修理第一沉積設備210的故障所需的修理時間。 The control device 500 may generate device information MCI for the first deposition device 210 based on the status data SDT. At this time, the equipment information MCI may include equipment fault information for displaying the first deposition equipment Backup 210 fails or a failure is predicted. In addition, the equipment information MCI may include equipment repair information for displaying a repair time required to repair a fault of the first deposition equipment 210 .

任務分配裝置100可基於設備信息MCI,生成單位任務TSK的分配計劃,從而在修理時間期間不向第一沉積設備210分配單位任務TSK。 The task allocation device 100 may generate an allocation plan of the unit task TSK based on the equipment information MCI, so that the unit task TSK is not allocated to the first deposition equipment 210 during the repair time.

任務分配裝置100可根據分配計劃,在修理時間期間不向第一沉積設備210分配單位任務TSK而向將其分配至第二沉積設備220。 The task allocation device 100 may not allocate the unit task TSK to the first deposition equipment 210 but allocate it to the second deposition equipment 220 during the repair time according to the allocation plan.

第二沉積設備220可將分配到的單位任務TSK分別分發給第三腔室330和第四腔室340。第三腔室330和第四腔室340可通過執行分發到的單位任務TSK來執行原子層沉積工藝。 The second deposition apparatus 220 may distribute the assigned unit tasks TSK to the third chamber 330 and the fourth chamber 340 respectively. The third chamber 330 and the fourth chamber 340 may perform the atomic layer deposition process by executing the assigned unit tasks TSK.

圖3是根據本發明實施例的半導體沉積系統10的操作方法的示意圖。 FIG. 3 is a schematic diagram of an operating method of the semiconductor deposition system 10 according to an embodiment of the present invention.

具體地,圖3對第一腔室310發生故障或者預測到將發生故障時的任務分配裝置100的操作進行說明。 Specifically, FIG. 3 illustrates the operation of the task allocation device 100 when the first chamber 310 fails or is predicted to fail.

參照圖1和圖3,半導體沉積系統10可包括任務分配裝置100、第一沉積設備210、第二沉積設備220、第一腔室310、第二腔室320、第三腔室330、第四腔室340、感測裝置400及控制裝置500。 Referring to FIGS. 1 and 3 , the semiconductor deposition system 10 may include a task distribution device 100 , a first deposition device 210 , a second deposition device 220 , a first chamber 310 , a second chamber 320 , a third chamber 330 , a fourth Chamber 340, sensing device 400 and control device 500.

任務分配裝置100接收半導體沉積工藝所需的單位任務TSK,並基於設備信息MCI對單位任務TSK樹立分配計劃。 The task allocation device 100 receives the unit tasks TSK required for the semiconductor deposition process, and establishes an allocation plan for the unit tasks TSK based on the equipment information MCI.

下面,假設第一腔室310發生故障或者預測到將要發生故障的情況進行說明 Below, description will be given assuming that the first chamber 310 fails or is predicted to fail.

感測裝置400可感測第一腔室310的狀態,並生成狀態數據SDT。 The sensing device 400 may sense the status of the first chamber 310 and generate status data SDT.

控制裝置500可基於狀態數據SDT,生成針對第一腔室310的設備信息MCI。此時,設備信息MCI可包括設備故障信息,用於顯示第一腔室310發生故障或者預測到故障。此外,設備信息MCI可包括設備修理信息,用於顯示修理第一腔室310故障所需的修理時間。 The control device 500 may generate equipment information MCI for the first chamber 310 based on the status data SDT. At this time, the equipment information MCI may include equipment failure information, which is used to show that a failure occurs in the first chamber 310 or that a failure is predicted. In addition, the equipment information MCI may include equipment repair information for displaying the repair time required to repair the fault of the first chamber 310 .

任務分配裝置100可基於設備信息MCI生成單位任務TSK的分配計劃,從而在修理時間期間不向第一腔室310分配單位任務TSK。 The task allocation device 100 may generate an allocation plan of the unit task TSK based on the equipment information MCI so that the unit task TSK is not allocated to the first chamber 310 during the repair time.

任務分配裝置100可根據分配計劃,將單位任務TSK分配給第一沉積設備210和第二沉積設備220。 The task allocation device 100 may allocate the unit task TSK to the first deposition equipment 210 and the second deposition equipment 220 according to the allocation plan.

第一沉積設備210可將分配到的單位任務TSK分發給第二腔室320而非第一腔室310。例如,第一沉積設備210在修理時間期間可能不向第一腔室310分發單位任務TSK。 The first deposition apparatus 210 may distribute the assigned unit task TSK to the second chamber 320 instead of the first chamber 310 . For example, the first deposition apparatus 210 may not distribute unit tasks TSK to the first chamber 310 during repair time.

第二腔室320可通過執行所分發到的單位任務TSK來執行原子層沉積工藝。 The second chamber 320 may perform an atomic layer deposition process by executing the assigned unit tasks TSK.

第二沉積設備220可將所分配到的單位任務TSK分別分發給第三腔室330和第四腔室340。 The second deposition device 220 may distribute the assigned unit tasks TSK to the third chamber 330 and the fourth chamber 340 respectively.

第三腔室330和第四腔室340可通過執行所分發到的單位任務TSK來執行原子層沉積工藝。 The third chamber 330 and the fourth chamber 340 may perform the atomic layer deposition process by executing the assigned unit tasks TSK.

根據實施例,任務分配裝置100可基於第一沉積設備210和第二沉積設備220的可用腔室的數量生成分配計劃。 According to an embodiment, the task allocation device 100 may generate an allocation plan based on the number of available chambers of the first deposition device 210 and the second deposition device 220 .

例如,任務分配裝置100可生成分配計劃,以使第二沉積設備220分配到的單位任務TSK為第一沉積設備210的兩倍。 For example, the task allocation device 100 may generate an allocation plan so that the unit task TSK allocated to the second deposition equipment 220 is twice that of the first deposition equipment 210 .

根據實施例,感測裝置400在感測第一腔室310的狀態時,感測第一腔室310的狀態至少兩次,以提高感測可靠性性。即,本發明的感測裝置400對第一腔室310的狀態進行確認,當第一腔室310發生故障或者預測到將發生故障時,可以通過對第一腔室310進行重新感測至少一次來重新確認狀態。 According to an embodiment, when sensing the state of the first chamber 310 , the sensing device 400 senses the state of the first chamber 310 at least twice to improve sensing reliability. That is, the sensing device 400 of the present invention confirms the status of the first chamber 310. When the first chamber 310 fails or is predicted to fail, the first chamber 310 can be re-sensed at least once. to reconfirm the status.

詳細地,感測裝置400可以以預設的週期對第一腔室310的狀態進行感測至少兩次。由此,感測裝置400可提高發生故障或者預測到將發生故障的腔室所對應的狀態感測結果的可靠性。此外,由於任務分配裝置100可基於可用腔室的數量生成分配計劃,因此能夠優化生產計劃。 In detail, the sensing device 400 may sense the state of the first chamber 310 at least twice in a preset period. Therefore, the sensing device 400 can improve the reliability of the state sensing results corresponding to the chamber where a failure occurs or is predicted to occur. In addition, since the task allocation device 100 can generate an allocation plan based on the number of available chambers, the production plan can be optimized.

圖4是根據本發明實施例的感測裝置400的示意圖。 Figure 4 is a schematic diagram of a sensing device 400 according to an embodiment of the present invention.

參照圖4,感測裝置400可包括設備感測單元410、阱感測單元420及泵感測單元430。 Referring to FIG. 4 , the sensing device 400 may include a device sensing unit 410 , a well sensing unit 420 , and a pump sensing unit 430 .

設備感測單元410可感測沉積設備的狀態。例如,設備感測單元410可感測沉積設備的整體操作狀態及設備的組成部件的狀態等。 The equipment sensing unit 410 may sense the status of the deposition equipment. For example, the equipment sensing unit 410 may sense the overall operating status of the deposition equipment, the status of component parts of the equipment, and the like.

阱感測單元420可感測各個多個腔室的阱的狀態。例如,阱感測單元420可通過測量流出物中未反應的前驅體來感測阱的狀態。 The well sensing unit 420 may sense the status of the wells of each of the plurality of chambers. For example, trap sensing unit 420 may sense the status of the trap by measuring unreacted precursors in the effluent.

泵感測單元430可感測各個多個腔室的泵的狀態。例如,泵感測單元430可通過測量腔室的真空泵的壓力變化等來感測泵的狀態。 The pump sensing unit 430 may sense the status of the pump for each of the plurality of chambers. For example, the pump sensing unit 430 may sense the status of the pump by measuring a pressure change of the vacuum pump of the chamber, or the like.

圖5是根據本發明實施例的控制裝置500的示意圖。 Figure 5 is a schematic diagram of a control device 500 according to an embodiment of the present invention.

參照圖4和圖5,控制裝置500可包括故障判斷單元510、故障預測單元520及時間計算單元530。 Referring to FIGS. 4 and 5 , the control device 500 may include a fault judgment unit 510 , a fault prediction unit 520 and a time calculation unit 530 .

故障判斷單元510可判斷沉積設備及各個多個腔室的故障與否。故障判斷單元510基於由感測裝置400接收的狀態數據(例如,感測裝置400感測 到的至少一次的感測數據),可分別判斷沉積設備和各個多個腔室是否發生故障。詳細地,故障判斷單元510基於由感測裝置400接收的狀態數據,例如由所述感測裝置400感測到的至少兩次的感測數據,可分別判斷沉積設備和各個多個腔室是否發生故障。由此,根據實施例的控制裝置500可提升感測結果的可靠性。 The fault determination unit 510 can determine whether the deposition equipment and each of the plurality of chambers are faulty. The fault judgment unit 510 is based on the status data received by the sensing device 400 (for example, the sensing device 400 senses Sensing data obtained at least once) can respectively determine whether the deposition equipment and each of the plurality of chambers have failed. In detail, based on the status data received by the sensing device 400 , such as at least two sensing data sensed by the sensing device 400 , the fault determination unit 510 may respectively determine whether the deposition equipment and each of the plurality of chambers are faulty. A malfunction occurred. Therefore, the control device 500 according to the embodiment can improve the reliability of the sensing results.

例如,故障判斷單元510在多個腔室中的任意一個所對應的阱及對應的泵中的至少一個發生故障時,判斷對應的腔室發生故障。 For example, when at least one of the trap and the corresponding pump corresponding to any one of the plurality of chambers fails, the fault determination unit 510 determines that the corresponding chamber fails.

故障預測單元520可分別預測沉積設備和各個多個腔室是否發生故障。 The failure prediction unit 520 may separately predict whether the deposition equipment and each of the plurality of chambers will fail.

例如,故障預測單元520可基於狀態數據利用人工智慧模型推導出部件的剩餘有效壽命,並基於剩餘有效壽命預測故障的發生。 For example, the fault prediction unit 520 may use an artificial intelligence model to derive the remaining effective life of the component based on the status data, and predict the occurrence of the failure based on the remaining effective life.

根據實施例,故障預測單元520可利用基於機器學習(machine learning)技術實時地評價健全性(health)並預測故障發生的時間點的算法,分別對沉積設備和各個多個腔室推導出部件的剩餘有效壽命,並預測故障的發生。 According to an embodiment, the fault prediction unit 520 may use an algorithm based on machine learning technology to evaluate health in real time and predict the time point at which a fault occurs, to deduce the components of the deposition equipment and each of the plurality of chambers respectively. Remaining effective life and predict the occurrence of failure.

根據另一實施例,故障預測單元520可分別對沉積設備和各個多個腔室適用故障預測軟體(例如,HIFACPMS系統),推導出部件的剩餘有效壽命,並預測故障的發生。 According to another embodiment, the fault prediction unit 520 can apply fault prediction software (eg, HIFACPMS system) to the deposition equipment and each of the plurality of chambers, derive the remaining effective life of the component, and predict the occurrence of faults.

故障預測單元520可另外具有資料庫,以運行基於上述機器學習的人工智慧模型。 The fault prediction unit 520 may additionally have a database to run the artificial intelligence model based on the above machine learning.

時間計算單元530可計算出修理故障所需的修理時間。例如,時間計算單元530確認發生故障的對象、故障類型,部件種類等,並代入預設的數學公式,從而可計算出修理時間。但是,本發明並不受限於此,為了計算修理故障所需的修理時間,時間計算單元530可利用人工智慧模型得出計算值。 The time calculation unit 530 may calculate the repair time required to repair the fault. For example, the time calculation unit 530 confirms the faulty object, fault type, component type, etc., and substitutes a preset mathematical formula to calculate the repair time. However, the present invention is not limited thereto. In order to calculate the repair time required to repair the fault, the time calculation unit 530 may use an artificial intelligence model to obtain a calculated value.

圖6是根據本發明實施例的半導體沉積系統的操作方法的流程圖。 6 is a flowchart of a method of operating a semiconductor deposition system according to an embodiment of the present invention.

下面,參照圖1至圖6,對半導體沉積系統10的操作方法進行說明。 Next, the operation method of the semiconductor deposition system 10 will be described with reference to FIGS. 1 to 6 .

首先,任務分配裝置100可基於設備信息MCI對單位任務TSK樹立分配計劃,並分配單位任務TSK(S10)。例如,如無設備信息MCI,則任務分配裝置100可根據預設的初始值樹立分配計劃。 First, the task allocation device 100 can establish an allocation plan for the unit task TSK based on the equipment information MCI, and allocate the unit task TSK (S10). For example, if there is no device information MCI, the task allocation device 100 can establish an allocation plan based on a preset initial value.

沉積設備200可基於由任務分配裝置100樹立的分配計劃將單位任務TSK分發給多個腔室300(S20)。例如,沉積設備200可包括多個腔室300,並將單位任務TSK均勻地分發至不同的腔室300。 The deposition apparatus 200 may distribute the unit task TSK to the plurality of chambers 300 based on the distribution plan established by the task distribution device 100 (S20). For example, the deposition apparatus 200 may include a plurality of chambers 300, and the unit tasks TSK may be evenly distributed to the different chambers 300.

腔室300可執行所分發到的單位任務TSK(S30)。例如,腔室300可以是用於執行原子層沉積工藝的處理腔室。 The chamber 300 can execute the distributed unit task TSK (S30). For example, chamber 300 may be a processing chamber for performing an atomic layer deposition process.

感測裝置400可通過感測沉積設備200的狀態生成狀態數據SDT(S40)。例如,感測裝置400可感測沉積設備200及沉積設備200中包括的多個腔室300的狀態。感測裝置400可將狀態數據SDT傳輸給任務分配裝置100。進一步地,感測裝置400可通過感測沉積設備200至少兩次來感測狀態。由此,根據本發明實施例的感測裝置可提升狀態數據SDT的可靠性。 The sensing device 400 may generate status data SDT by sensing the status of the deposition apparatus 200 (S40). For example, the sensing device 400 may sense the status of the deposition apparatus 200 and the plurality of chambers 300 included in the deposition apparatus 200 . The sensing device 400 may transmit status data SDT to the task allocation device 100 . Further, the sensing device 400 may sense the state by sensing the deposition apparatus 200 at least twice. Therefore, the sensing device according to the embodiment of the present invention can improve the reliability of the status data SDT.

控制裝置500可基於狀態數據SDT生成針對沉積設備200的設備信息MCI(S50)。例如,控制裝置500可通過任務分配裝置100接收狀態數據SDT,並將設備信息MCI傳輸給任務分配裝置100。 The control device 500 may generate device information MCI for the deposition device 200 based on the status data SDT (S50). For example, the control device 500 may receive the status data SDT through the task allocation device 100 and transmit the device information MCI to the task allocation device 100 .

當工藝沒有結束時(S60的否),可執行步驟S10,即,任務分配裝置100基於設備信息MCI對單位任務TSK樹立分配計劃,並分配單位任務TSK。 When the process has not ended (No in S60 ), step S10 may be executed, that is, the task allocation device 100 establishes an allocation plan for the unit task TSK based on the equipment information MCI, and allocates the unit task TSK.

圖7是根據本發明實施例的半導體沉積系統的操作方法的詳細流程圖。 7 is a detailed flowchart of a method of operating a semiconductor deposition system according to an embodiment of the present invention.

下面,參照圖1至圖7,對圖7所示的樹立分配計劃並分配單位任務的步驟S10進行詳細說明。 Next, step S10 of establishing an allocation plan and allocating unit tasks shown in FIG. 7 will be described in detail with reference to FIGS. 1 to 7 .

首先,任務分配裝置100可基於設備信息MCI確認沉積設備200是否發生故障及是否預測到故障(S11)。 First, the task allocation device 100 can confirm whether a failure occurs in the deposition equipment 200 and whether the failure is predicted based on the equipment information MCI (S11).

如果沉積設備200發生故障或者預測到將發生故障(S12),則任務分配裝置100可在修理時間期間從分配對象中排除對應的沉積設備200(S13)。例如,任務分配裝置100可準備為分配對象即設備或者腔室樹立分配計劃。 If the deposition equipment 200 fails or is predicted to fail (S12), the task allocation device 100 may exclude the corresponding deposition equipment 200 from the allocation objects during the repair time (S13). For example, the task allocation device 100 may prepare to establish an allocation plan for the allocation object, that is, the equipment or chamber.

任務分配裝置100可基於設備信息MCI為多個腔室300確認是否發生故障及是否預測到故障(S14)。 The task allocation device 100 may confirm whether a fault occurs and whether a fault is predicted for the plurality of chambers 300 based on the equipment information MCI (S14).

如果多個腔室300中的至少一個發生故障或者預測到將發生故障(S15),則任務分配裝置100可在修理時間期間從分配對象中排除對應的腔室300(S16)。 If at least one of the plurality of chambers 300 fails or is predicted to fail (S15), the task allocation device 100 may exclude the corresponding chamber 300 from the allocation objects during the repair time (S16).

任務分配裝置100可基於分配對象樹立分配計劃,並分配單位任務TSK(S17)。 The task allocation device 100 can establish an allocation plan based on the allocation target, and allocate the unit task TSK (S17).

通過上述方式,本發明的半導體沉積系統及其操作方法通過在半導體沉積設備的各生產線中適用故障預測算法,基於沉積設備的異常信號及主要部件的有效壽命,可實時地優化生產計劃。 In the above manner, the semiconductor deposition system and its operating method of the present invention can optimize production plans in real time by applying fault prediction algorithms in each production line of semiconductor deposition equipment based on abnormal signals of the deposition equipment and the effective life of major components.

此外,本發明的半導體沉積系統及其操作方法具有可根據腔室單位管理及分配任務的效果。 In addition, the semiconductor deposition system and its operating method of the present invention have the effect of being able to manage and allocate tasks according to chamber units.

此外,本發明的半導體沉積系統及其操作方法通過沉積設備持續生產,可具有最小化設備虧損且最大化生產量的效果。 In addition, the semiconductor deposition system and its operating method of the present invention can continuously produce through the deposition equipment, which can have the effect of minimizing equipment losses and maximizing production throughput.

此外,本發明的半導體沉積系統及其操作方法通過預先計算出設備的修理時間,具有可最小化運營維護費用的效果。 In addition, the semiconductor deposition system and its operating method of the present invention have the effect of minimizing operation and maintenance costs by calculating the repair time of the equipment in advance.

以上,本說明書中說明的功能性操作及本主題有關的實施方式包括本說明書中揭示的結構及其結構上的等價物,可在數碼電子電路或者計算機軟體、固件或者硬體中或者它們中的至少一個組合中實現。 Above, the functional operations described in this specification and the embodiments related to the subject matter include the structures disclosed in this specification and their structural equivalents, which can be implemented in digital electronic circuits or computer software, firmware or hardware, or at least in them. realized in a combination.

本說明書中描述的主題的實施方式可由至少一個電腦程式產品,即與為了在數據處理裝置上執行或為了控制操作而在有形的程序介質上編碼的電腦程式指令相關的一個以上的模塊來實現。有形的程序介質可為電波信號或計算機可讀介質。電波信號是如機器生成的電學、光學或電磁信號等人工生成的信號,其為了能夠由計算機執行且對傳輸至適當的接收裝置的信息進行編碼而生成。計算機可讀介質可以是機器可讀存儲裝置、機器可讀存儲基板、存儲裝置、影響到機器可讀電波信號的物質的組合或其中至少一個以上的組合。 Embodiments of the subject matter described in this specification may be implemented by at least one computer program product, ie, one or more modules associated with computer program instructions encoded on a tangible program medium for execution on a data processing apparatus or for controlling operations. The tangible program medium may be a radio wave signal or a computer-readable medium. Radio signals are artificially generated signals, such as machine-generated electrical, optical or electromagnetic signals, which are generated in order to be executable by a computer and encode information for transmission to an appropriate receiving device. The computer-readable medium may be a combination of a machine-readable storage device, a machine-readable storage substrate, a storage device, a substance that affects machine-readable radio wave signals, or a combination of at least one or more thereof.

電腦程式(還稱為程序、軟體、應用軟體、腳本或代碼)可由包括被編譯或解析的語言及先驗性或程序性語言在內的程式語言的任何形式製作,還可以展開為包括獨立程序或模塊、組件、子程序或適合在計算機環境中使用的其他單元在內的任何形式。 A computer program (also called a program, software, application, script or code) may be produced in any form of programming language, including compiled or parsed languages and a priori or procedural languages, and may be expanded to include stand-alone programs or any form including a module, component, subroutine or other unit suitable for use in a computer environment.

電腦程式並非必須與文件設備的文件對應。程序可存儲在提供於所請求的程序中的單個文件內,或存儲在多個彼此作用的文件(例如,存儲一個以上的模塊、子程序或部分代碼的文件)內,或存儲在攜帶有其他程序或數據的文件中的一部分(例如,存儲於標記語言文件內的一個以上的腳本)內。 The computer program does not necessarily need to correspond to the file on the file device. Programs may be stored in a single file provided in the requested program, in multiple files that interact with each other (e.g., files storing more than one module, subroutine, or portion of code), or in a file that carries other A portion of a program or data file (for example, one or more scripts stored in a markup language file).

電腦程式可在一個網站,或分散在多個網站,並以通過通信網絡互相連接的多個計算機或一個計算機上執行的方式展開。 A computer program may be deployed on a single website, or may be distributed across multiple websites and executed on multiple computers or a single computer that are connected to each other through a communications network.

進一步地,在本專利文獻中所描述的邏輯流程和結構方塊圖是用於描述公開的結構裝置所支持的對應功能以及公開的步驟所支持的對應行為及/或特定方法的,還可用於構建對應的軟體結構、算法及其等效物。 Furthermore, the logic flow and structural block diagrams described in this patent document are used to describe the corresponding functions supported by the disclosed structural devices and the corresponding behaviors and/or specific methods supported by the disclosed steps. They can also be used to construct Corresponding software structures, algorithms and their equivalents.

本說明書中描述的過程和邏輯流程可通過一個以上的可編程處理器來執行,該可編程處理器為了在輸入數據上操作並生成輸出來執行功能,執行一個以上的電腦程式。 The processes and logic flows described in this specification may be performed by more than one programmable processor that executes more than one computer program in order to operate on input data and generate output to perform functions.

適合於執行電腦程式的處理器例如包括通用及特殊目的的微處理器兩者以及任何類型的數字計算機中的任何一個以上的處理器。通常,處理器從只讀存儲器或隨機存取存儲器或這兩者中接收指令和數據。 Examples of processors suitable for the execution of a computer program include both general and special purpose microprocessors, and any one or more processors of any type of digital computer. Typically, a processor receives instructions and data from read-only memory or random access memory, or both.

計算機的核心要素是用於存儲指令和數據的至少一個存儲裝置及用於執行指令的處理器。此外,計算機通常為了從例如磁碟、磁光碟或光碟等的用於存儲數據的至少一個大容量存儲裝置中接收數據,或者為了向該大容量存儲裝置傳輸數據,或者為了執行這種兩種操作而能夠操作的方式結合有或者包括該一個以上的大容量存儲裝置。但是,計算機無需具備這些裝置。 The core elements of a computer are at least one storage device for storing instructions and data and a processor for executing the instructions. In addition, computers are generally designed to receive data from at least one mass storage device for storing data, such as a magnetic disk, a magneto-optical disk, or an optical disk, or to transmit data to the mass storage device, or to perform both operations. And can be operated in combination with or include the one or more mass storage devices. However, the computer does not need to have these devices.

綜上所述,本發明所揭露之技術手段確能有效解決習知等問題,並達致預期之目的與功效,且申請前未見諸於刊物、未曾公開使用且具長遠進步性,誠屬專利法所稱之發明無誤,爰依法提出申請,懇祈 鈞上惠予詳審並賜准發明專利,至感德馨。 In summary, the technical means disclosed in the present invention can indeed effectively solve the problems of conventional knowledge and achieve the expected purposes and effects. They have not been published in publications or publicly used before the application and are of long-term progress. They are truly worthy of the title. The invention described in the Patent Law is correct. I have submitted the application in accordance with the law. I sincerely pray that Jun will review it carefully and grant a patent for the invention. I am deeply grateful.

惟以上所述者,僅為本發明之數種較佳實施例,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明書內容所作之等效變化與修飾,皆應仍屬本發明專利涵蓋之範圍內。 However, the above are only several preferred embodiments of the present invention, and should not be used to limit the scope of the present invention. That is, all equivalent changes and modifications made based on the patent scope of the present invention and the content of the invention specification are It should still fall within the scope of the patent of this invention.

10:半導體沉積系統 10:Semiconductor deposition system

100:任務分配裝置 100:Task distribution device

20:資源管理系統 20:Resource management system

200:沉積設備 200:Deposition equipment

300:腔室 300: Chamber

400:感測裝置 400: Sensing device

500:控制裝置 500:Control device

Claims (12)

一種半導體沉積系統,包括:任務分配裝置,其基於設備信息對單位任務樹立分配計劃,並分配所述單位任務;沉積設備,其基於由所述任務分配裝置樹立的所述分配計劃,將所述單位任務分發至多個腔室;感測裝置,其通過感測所述沉積設備的狀態生成狀態數據;以及控制裝置,其基於所述狀態數據,生成針對所述沉積設備的所述設備信息,所述分配計劃包括所述單位任務分別對應各個所述多個腔室的內容;所述設備信息包括設備故障信息及設備修理信息中的至少一個,所述設備故障信息包括所述沉積設備及各個所述多個腔室的故障發生與否及故障預測結果,所述設備修理信息包括用於修理所述故障的修理時間;所述任務分配裝置樹立所述分配計劃,當所述沉積設備發生故障或者預測到將發生故障時,在所述修理時間期間不向對應的沉積設備分配所述單位任務;所述任務分配裝置樹立所述分配計劃,當所述多個腔室中任意一個中發生故障或者預測到將發生故障時,在所述修理時間期間不向對應的腔室分配所述單位任務。 A semiconductor deposition system, including: a task allocation device, which establishes an allocation plan for unit tasks based on equipment information, and allocates the unit tasks; a deposition equipment, which based on the allocation plan established by the task allocation device, allocates the said Unit tasks are distributed to multiple chambers; a sensing device generates status data by sensing the status of the deposition equipment; and a control device generates the equipment information for the deposition equipment based on the status data, so The distribution plan includes the unit tasks corresponding to the contents of each of the plurality of chambers; the equipment information includes at least one of equipment failure information and equipment repair information, and the equipment failure information includes the deposition equipment and each of the Whether the faults of the plurality of chambers have occurred and the fault prediction results, the equipment repair information includes the repair time for repairing the faults; the task allocation device establishes the allocation plan, when the deposition equipment fails or When a failure is predicted to occur, the unit task is not allocated to the corresponding deposition equipment during the repair time; the task allocation device establishes the allocation plan, when a failure occurs in any one of the plurality of chambers or When a failure is predicted to occur, the unit task is not assigned to the corresponding chamber during the repair time. 如請求項1所述之半導體沉積系統,其中,所述任務分配裝置基於所述設備信息,並利用任務分配優化及調度算法,實時地樹立並修改所述分配計劃。 The semiconductor deposition system of claim 1, wherein the task allocation device establishes and modifies the allocation plan in real time based on the equipment information and using a task allocation optimization and scheduling algorithm. 如請求項1所述之半導體沉積系統,其中,所述多個腔室分別包括阱及泵。 The semiconductor deposition system of claim 1, wherein the plurality of chambers respectively include wells and pumps. 如請求項3所述之半導體沉積系統,其中,所述感測裝置包括:設備感測單元,其用於感測所述沉積設備的狀態;阱感測單元,其用於感測各個所述多個腔室的阱的狀態;以及泵感測單元,其用於感測各個所述多個腔室的泵的狀態。 The semiconductor deposition system according to claim 3, wherein the sensing device includes: an equipment sensing unit for sensing the state of the deposition equipment; a well sensing unit for sensing each of the A state of a well of a plurality of chambers; and a pump sensing unit for sensing a state of a pump of each of the plurality of chambers. 如請求項4所述之半導體沉積系統,其中,所述控制裝置包括:故障判斷單元,其用於判斷所述沉積設備及各個所述多個腔室的故障與否;故障預測單元,其用於預測所述沉積設備及各個所述多個腔室的故障發生;以及修理時間計算單元,其用於計算修理所述故障所用的所述修理時間。 The semiconductor deposition system according to claim 4, wherein the control device includes: a fault judgment unit for judging whether the deposition equipment and each of the plurality of chambers are faulty; a fault prediction unit for Predicting the occurrence of faults in the deposition equipment and each of the plurality of chambers; and a repair time calculation unit configured to calculate the repair time used to repair the fault. 如請求項5所述之半導體沉積系統,其中,所述故障判斷單元在所述多個腔室中任意一個對應的阱以及對應的泵中的至少一個發生故障時,判斷為對應腔室中發生故障。 The semiconductor deposition system according to claim 5, wherein the fault judgment unit determines that when at least one of the corresponding wells and the corresponding pumps in any one of the plurality of chambers fails, a fault occurs in the corresponding chamber. Fault. 如請求項5所述之半導體沉積系統,其中,所述故障預測單元基於所述狀態數據,利用人工智慧模型,導出部件的剩餘有效壽命,並基於所述剩餘有效壽命預測故障的發生。 The semiconductor deposition system of claim 5, wherein the fault prediction unit uses an artificial intelligence model to derive the remaining effective life of the component based on the status data, and predicts the occurrence of the failure based on the remaining effective life. 如請求項1所述之半導體沉積系統,其中,所述沉積設備為原子層沉積設備。 The semiconductor deposition system of claim 1, wherein the deposition equipment is an atomic layer deposition equipment. 如請求項1所述之半導體沉積系統,其中,所述感測裝置感測所述沉積設備的狀態至少兩次,且通過綜合感測結果生成所述狀態數據。 The semiconductor deposition system of claim 1, wherein the sensing device senses the status of the deposition equipment at least twice, and generates the status data by integrating sensing results. 一種半導體沉積系統的操作方法,包括以下步驟: 任務分配裝置基於設備信息對單位任務樹立分配計劃,並分配所述單位任務;沉積設備基於由所述任務分配裝置樹立的所述分配計劃,將所述單位任務分發至多個腔室;所述多個腔室執行所述單位任務;感測裝置通過感測所述沉積設備的狀態生成狀態數據;以及控制裝置基於所述狀態數據,生成針對所述沉積設備的所述設備信息,所述分配計劃包括所述單位任務分別對應各個所述多個腔室的內容所述設備信息包括設備故障信息及設備修理信息中的至少一個,所述設備故障信息包括所述沉積設備及各個所述多個腔室的故障發生與否以及故障預測結果,所述設備修理信息包括用於修理所述故障的修理時間;其中,樹立所述分配計劃並分配所述單位任務的步驟,包括:所述任務分配裝置基於所述設備信息,確認所述多個腔室是否發生故障以及是否預測到故障;當所述多個腔室中的至少一個發生故障或者預測到將發生故障時,於所述修理時間期間內,所述任務分配裝置從分配對象中排除對應的腔室;以及所述任務分配裝置基於所述分配對象樹立所述分配計劃,並分配所述單位任務。 An operating method of a semiconductor deposition system, including the following steps: The task allocation device establishes an allocation plan for unit tasks based on equipment information, and allocates the unit tasks; the deposition equipment distributes the unit tasks to multiple chambers based on the allocation plan established by the task allocation device; the multiple chambers Each chamber performs the unit task; the sensing device generates status data by sensing the status of the deposition equipment; and the control device generates the equipment information for the deposition equipment based on the status data, and the allocation plan The unit tasks include content corresponding to each of the plurality of chambers. The equipment information includes at least one of equipment failure information and equipment repair information. The equipment failure information includes the deposition equipment and each of the plurality of chambers. Whether a fault occurs in the room and the fault prediction result, the equipment repair information includes the repair time for repairing the fault; wherein, the step of establishing the allocation plan and allocating the unit tasks includes: the task allocation device Based on the equipment information, confirm whether the plurality of chambers fails and whether a failure is predicted; when at least one of the plurality of chambers fails or is predicted to fail, within the repair time period , the task allocation device excludes the corresponding chamber from the allocation object; and the task allocation device establishes the allocation plan based on the allocation object, and allocates the unit task. 如請求項10所述之半導體沉積系統的操作方法,其中,樹立所述分配計劃並分配所述單位任務的步驟,包括:所述任務分配裝置基於所述設備信息,確認所述沉積設備是否發生故障以及是否預測到故障;以及 當所述沉積設備發生故障或者預測到將發生故障時,從分配對象中排除對應的沉積設備。 The operating method of the semiconductor deposition system according to claim 10, wherein the step of establishing the allocation plan and allocating the unit tasks includes: the task allocation device confirms whether the deposition equipment occurs based on the equipment information. the failure and whether the failure was predicted; and When the deposition equipment fails or is predicted to fail, the corresponding deposition equipment is excluded from the allocation object. 如請求項10所述之半導體沉積系統的操作方法,其中,在通過感測所述沉積設備的狀態生成狀態數據的步驟中,所述感測裝置感測所述沉積設備的狀態至少兩次,並通過綜合感測結果生成狀態數據。 The operating method of a semiconductor deposition system as claimed in claim 10, wherein in the step of generating status data by sensing the status of the deposition equipment, the sensing device senses the status of the deposition equipment at least twice, And generate status data by integrating sensing results.
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