TWI822178B - A method for manufacturing distributed feedback laser light emitting structure - Google Patents

Abstract

A method for manufacturing distributed feedback laser light emitting structure is provided. The distributed feedback laser light emitting structure is fabricated on a semiconductor epitaxial wafer. The method includes: forming a first-type semiconductor layer and forming a light emitting composite layer on the first-type semiconductor layer, wherein the light emitting composite layer has an active layer, a first grating layer and a second grating layer, and the first grating layer and the second grating layer are expected to be formed have a target period, and the first grating layer having a first predetermined period and the second grating layer having a second predetermined period are actually formed, wherein the finished product includes the first grating layer having a first period and the second grating layer having a second period; and forming a plurality of second-type semiconductor layers on the light emitting composite layer, wherein the second-type semiconductor layers are ridge-shaped.

Description

A method of manufacturing a distributed feedback laser luminescent structure

A method of manufacturing a semiconductor laser, in particular, a method of manufacturing a distributed feedback laser light-emitting structure.

Semiconductor laser is an important optoelectronic component for practical applications in today's technology. Semiconductor lasers are required for fiber optic communications, barcode scanning, laser printing and high-density optical storage, as well as other applications including displays. , lighting and medicine also need to use semiconductor lasers, so the development of semiconductor lasers has become one of the most important optoelectronic components today. At present, semiconductor laser luminescence wavelengths include blue ultraviolet light, visible light, near-infrared light, and far-infrared light.

As mentioned above, in the field of optical fiber communications, Wavelength Division Multiplexing (WDM) technology is to synchronously transmit multiple light waves of different wavelengths within a single optical fiber. The data transmission speed and capacity are doubled and a multiplexer is used. At the transmitting end, optical carriers of different wavelengths are combined and then transmitted into the single-mode fiber. At the receiving end, the optical carriers of different wavelengths are separated by a demultiplexer. Since the carriers of different wavelengths are independent of each other, they can be bidirectional. transmission. Depending on the specifications of the multiplexer and demultiplexer, products with the required number of transmission wavelengths can be selected. The characteristics of WDM technology determine that it can increase the bandwidth several times or dozens of times. Due to the emergence of the wavelength division multiplexing system, an optical fiber has been upgraded from transmitting one channel of coarse wave signals to transmitting multiple channels of fine wave signals.

Semiconductor lasers, or laser diodes, have the advantages of small size and low power consumption, and are widely used in optoelectronic system products, such as optical wave communications, household appliances, precision measurement, and optical fiber communications. Among them, the Distributed Feedback Laser (DFB laser) has the characteristics of simple manufacturing process, single-mode output and suitable for long-distance transmission. The laser optical signal generated by the Distributed Feedback Laser can still be maintained after long-distance transmission. Due to its good signal-to-noise ratio, it is a widely used light source in today's light wave communication and optical fiber communication systems.

Among them, the DFB laser has a built-in Bragg grating, which is a side-emitting semiconductor laser. DFB laser mainly uses semiconductor materials as the medium, including gallium antimonide (GaSb), gallium arsenide (GaAs), indium phosphide (InP), zinc sulfide (ZnS), etc. On the other hand, electroluminescence, also known as electroluminescence (EL), usually refers to the phenomenon of emitting light when an electric current passes through a substance or when the substance is under a strong electric field. It is sometimes called luminescence in consumer product production. The biggest feature of DFB laser is its very good monochromaticity (i.e. spectral purity). However, due to the influence of epitaxy and the stability and uniformity of the wafer process, it is difficult to control the center wavelength of electroluminescence.

The etching methods in the semiconductor manufacturing process can be divided into wet etching and dry etching. The wet etching method is to expose a layer of photoresist on the wafer, and then spray the chemical etchant on the wafer or soak the wafer in a chemical solution. The photoresist area is not covered by mid-etch, and the photoresist is finally washed away. However, since wet etching is isotropic etching and will etch the sides together, when the line width falls below a certain range, such as 3μm, the pattern transfer will become increasingly inaccurate, so it is gradually replaced by dry etching.

The etching process removes specific areas of the wafer surface to deposit other materials. Dry etching is one of the most commonly used processes in semiconductor manufacturing. Before starting etching, a photolithography process is used to create a patterned etching mask on the wafer, usually a photoresist or a hard mask (usually oxide or nitride). During the wafer manufacturing process, the patterning and etching processes are repeated many times. The etching process has been continuously Progress, however, still has its limits. No matter how much improvements are made, there will still be certain errors. Therefore, there will still be differences in performance and quality after subsequent processing of photodiodes including etching processes.

One aspect of the present invention provides a method for manufacturing a distributed feedback laser luminescence structure. The distributed feedback laser luminescence structure is manufactured on a semiconductor epitaxial wafer, including: forming a first type semiconductor layer; forming a luminescent composite layer On the first type semiconductor layer, the light-emitting composite layer has an active layer, a first grating layer and a second grating layer. It is expected to form a first grating layer and a second grating layer with a target period. Corresponding to the target period, it is expected to form a first grating layer. a first grating layer with a preset period and a second grating layer with a second preset period, and the finished product includes a first grating layer with a first actual period and a second grating layer with a second actual period; and forming A plurality of second-type semiconductor layers are on the light-emitting composite layer, and the second-type semiconductor layers are ridge-shaped relative to the light-emitting composite layer.

Another aspect of the present invention is a method for manufacturing a distributed feedback laser luminescence structure. The distributed feedback laser luminescence structure is manufactured on a semiconductor epitaxial wafer, including: forming a first type semiconductor layer; A plurality of luminescent composite layers are on the first type semiconductor layer. The luminescent composite layer has an active layer, a first grating layer and a second grating layer. It is expected to form a first grating layer and a second grating layer with a target period, corresponding to the target The cycle is expected to form a first grating layer with a first preset cycle and a second grating layer with a second preset cycle, the first preset cycle is less than the target cycle and the second preset cycle is greater than the target cycle, and is included in the finished product. A first grating layer with a first actual period and a second grating layer with a second actual period; forming a plurality of second-type semiconductor layers on the light-emitting composite layer, and the second-type semiconductor layers are ridge-shaped relative to the light-emitting composite layer; and forming a plurality of insulating layers between the second-type semiconductor layers.

The present invention provides a method for manufacturing a distributed feedback laser luminescence structure. By using the target period and the first preset period and the second preset period, the invention provides a method for improving the wavelength distribution and easily New manufacturing process that exceeds specifications. For WDM applications, that is, wavelength division multiplexing technology, since the wavelength distribution easily exceeds specifications, resulting in a corresponding reduction in the yield of crystal grain production, the present invention provides an innovative solution.

On the other hand, in one embodiment of the present invention, more than one ridge waveguide is designed in a single die, and is matched with gratings of different periods to increase wavelength selectivity and improve production yield. Under the original product design, the present invention does not need to modify the epitaxial crystal, but only needs to modify the grating design, without affecting the number of process flows. In other words, the present invention provides a method for manufacturing a distributed feedback laser light-emitting structure, which can improve yield and use flexibility without increasing process difficulty and is widely used.

11: First type semiconductor layer

12: Luminous composite layer

13:Active layer

14A: First grating layer

14B: Second grating layer

15: Second type semiconductor layer

21: First type semiconductor layer

22: Luminous composite layer

23:Active layer

24A: First grating layer

24B: Second grating layer

25: Second type semiconductor layer

26: Ridge unit

27:Insulation layer

S31~S33, S61~S64: step process

Figure 1 is a side view of a distributed feedback laser light-emitting structure according to an embodiment of the present invention.

Figure 2 is a side view of a distributed feedback laser light-emitting structure according to another embodiment of the present invention.

Figure 3 is a flow chart of a manufacturing method of a distributed feedback laser light-emitting structure according to another embodiment of the present invention.

Figure 4 is a side view of a distributed feedback laser light-emitting structure according to another embodiment of the present invention.

Figure 5 is a side view of a distributed feedback laser light-emitting structure according to another embodiment of the present invention.

Figure 6 is a flow chart of a method for manufacturing a distributed feedback laser light-emitting structure according to another embodiment of the present invention.

In semiconductor lasers, the output beam is a narrow and elliptical light beam. The DFB (Distributed Feedback) wavelength is determined by the equivalent refractive index of the grating and the grating period. Therefore, when the grating period changes, the DFB wavelength will also change. And change.

As shown in the following embodiments, the present invention provides a distributed feedback laser light-emitting structure and a manufacturing method thereof. In one embodiment of the present invention, please refer to Figures 1 and 2, a distributed feedback laser light-emitting structure is made on a semiconductor epitaxial wafer and includes: a first-type semiconductor layer 11; The luminescent composite layer 12 is disposed on the first type semiconductor layer 11. The luminescent composite layer 12 has an active layer 13, a first grating layer 14A and a second grating layer 14B; a plurality of second type semiconductor layers 15 is disposed on the luminescent composite layer. On layer 12 , the second-type semiconductor layer 15 is ridge-shaped relative to the light-emitting composite layer 12 . The first-type semiconductor 11, the light-emitting composite layer 12 and a second-type semiconductor layer 15 are defined as a light-emitting unit. The first grating layer 14A with the first preset period and the second grating layer 14B with the second preset period are expected to be formed corresponding to the target period, and the finished product includes the first grating layer 14A with the first actual period and the second grating layer 14B with the second preset period. Second grating layer 14B of the second actual period. The manufacturing method of how to form this structure will be described below.

In one embodiment of the present invention, a method for manufacturing a distributed feedback laser luminescent structure is provided. The distributed feedback laser luminescent structure is manufactured on a semiconductor epitaxial wafer, including: forming a first type semiconductor layer 11; forming a luminescent composite Layer 12 is on the first type semiconductor layer 11. The luminescent composite layer 12 has an active layer 13, a first grating layer 14A and a second grating layer 14B. The active layer 13 is the luminescent layer. When forming the luminescent composite layer 12, the first layer 12 can be formed first. The grating layer 14A and the second grating layer 14B then form the active layer 13. Alternatively, the active layer 13 can be formed first and then the first grating layer 14A and the second grating layer 14B are formed, and the first grating layer 14A and the second grating layer 14B are transparent. Formed by electron beam lithography technology; and forming a plurality of second-type semiconductor layers 15 on the light-emitting composite layer 12, wherein the first-type semiconductor layer 11 and the second-type semiconductor layer 15 are N-type and P-type semiconductors respectively; the second-type semiconductor The layer 15 is ridge-shaped relative to the light-emitting composite layer 12 , that is, compared to the light-emitting composite layer 12 , the second-type semiconductor layers 15 have a spacing between them and are formed adjacent to the light-emitting composite layer 12 superior. In the process design, it is expected to form the first grating layer 14A and the second grating layer 14B with a target period, and corresponding to the target period, it is expected to form the first grating layer 14A with the first preset period and the second grating layer 14B with the target period. The second grating layer 14B with a preset period is actually formed with a first grating layer 14A with a first actual period and a second grating layer 14B with a second actual period.

In other words, during process design, it is first estimated that when the product is completed, the grating layer will have a target cycle, and two more cycles will be added, namely the first preset cycle and the second preset cycle. These two cycles will respectively fall within Near the target period; to explain in more detail, the first preset period and the second preset period are respectively smaller than and larger than the target period, or respectively larger than and smaller than the target period; further speaking, the first preset period and the target period are relatively similar. Reduced to the first drop point gap, the second preset period and the target period are subtracted to the second drop point gap. The first drop point gap is smaller than the second drop point gap, or the first drop point gap is greater than the second drop point gap. The gap, this part can be adjusted according to the actual production process conditions, so that the first grating layer 14A and the second grating layer 14B of the finished product can be formed according to the first preset cycle and the second preset cycle, and the first preset Assume that the period and the second preset period are respectively smaller than and larger than or larger than or smaller than the period. Bilateral adjustments can be made, that is, period reduction and increase adjustments can be made downward and upward at the same time, so as to be closer to the original target period. .

In the actual manufacturing process, the user can adjust the first preset cycle and the second preset cycle to correspond to the target cycle based on the operating conditions of the machine, that is, the operating status of the semiconductor process equipment. For example, in one embodiment of the present invention, the target cycle A is 400nm, the first preset period B and the second preset period C are respectively 360nm and 440nm, the first preset period B and the second preset period C are respectively smaller and larger than the target period A correspondingly, and at After the semiconductor process is completed, due to process factors, the first actual period of the first grating layer 14A of the product is 380 nm and the second actual period of the second grating layer 14B is 460 nm. Therefore, the first actual period is very close to the target period A (400 nm). Compared with the traditional manufacturing process, the method of the embodiment of the present invention can produce a grating layer that is closer to the target period A. In other embodiments, the first preset period B and the second preset period C can also be respectively larger and smaller than the target period A corresponding to each other.

On the other hand, the first preset period B and the second preset period C can also be designed so that one of them is closer to the target period A. In another embodiment of the present invention, the target period A is 400 nm, depending on the conditions of the semiconductor process equipment. , using the first preset period B and the second preset period C to be 380nm and 440nm respectively. As mentioned above, the first preset period B and the target period A are subtracted to the first landing point difference, and the second preset period The subtraction of C and the target period A is the second landing point difference. In this embodiment, the first landing point difference of 20 nm is smaller than the second landing point difference of 40 nm. After the semiconductor process is completed, the first grating layer 14A of the product is formed. The first actual period is 360nm and the second actual period 420nm of the second grating layer 14B. Therefore, the second actual period 420nm of the second grating layer 14B is very close to the target period A. Compared with the traditional process, the present invention can adapt to the machine operating conditions. A grating layer closer to the target period A can be produced. In this embodiment, the luminescence wavelength variation of the light generated by the luminescent composite layer 12 through the distributed feedback laser luminescent structure will be between ±1.5~2nm.

Through the above structure, a light emitted from the light-emitting composite layer 12 obtains light with a first wavelength and a second wavelength through the first grating layer 14A and the second grating layer 14B corresponding to the first preset period B and the second wavelength respectively. The second preset period C, therefore, the wavelength of the light emitted by the present invention will be closer to the originally expected wavelength range; on the other hand, the difference between the first preset period B or the second preset period C and the target period is less than ± 50nm, in other words, the first preset period B and the second preset period C are compared to the target period, and the first preset period B and the second preset period C are respectively smaller and larger, or larger and smaller than the target period, respectively. Within the range of 50nm; correspondingly, the luminescent composite layer 12 uses a distributed feedback laser luminescent structure, and its luminescent wavelength distribution is in the range of λcenter ±1.5~2nm.

Please refer to FIG. 3 , which is a flow chart of a manufacturing method of a distributed feedback laser light-emitting structure according to another embodiment of the present invention. The distributed feedback laser light-emitting structure is fabricated on a semiconductor epitaxial wafer. The manufacturing method of the distributed feedback laser light-emitting structure in this embodiment includes the following steps:

Step S31: Form a first-type semiconductor layer.

Step S32: Form a luminescent composite layer on the first type semiconductor layer. The luminescent composite layer has an active layer, a first grating layer and a second grating layer. It is expected to form a first grating layer and a second grating layer with a target period, corresponding to the target The period is expected to form a first grating layer with a first preset period and a second grating layer with a second preset period, and the finished product includes a first grating layer with a first actual period and a second grating layer with a second actual period. Two grating layers.

Step S33: Form a plurality of second-type semiconductor layers on the light-emitting composite layer. The second-type semiconductor layers are ridge-shaped relative to the light-emitting composite layer.

In another embodiment of the present invention, please refer to Figures 4 and 5, a distributed feedback laser luminescence structure is provided. The distributed feedback laser luminescence structure is made on a semiconductor epitaxial wafer and includes: A first type semiconductor layer 21; a plurality of luminescent composite layers 22, which are disposed on the first type semiconductor layer 21. The luminescent composite layer 22 has an active layer 23, a first grating layer 24A and a second grating layer 24B; a plurality of second type semiconductor layers 25. Disposed on the light-emitting composite layer 22. The light-emitting composite layer 22 and the second-type semiconductor layer 25 are ridge-shaped relative to the first-type semiconductor layer 21 and are defined as ridge units 26 and have a ridge width; and a plurality of insulating layers 27, Disposed between the light-emitting composite layers 22; wherein the first grating layer 24A with the first preset period and the second grating layer 24B with the second preset period are expected to be formed corresponding to the target period, and the finished product includes the first grating layer 24A with the first preset period. The first grating layer 24A has a real period and the second grating layer 24B has a second real period. The manufacturing method of how to form this structure will be described below.

In one embodiment, the present invention provides a method for manufacturing a distributed feedback laser light-emitting structure. The distributed feedback laser light-emitting structure is manufactured on a semiconductor epitaxial wafer, including: forming a first type semiconductor layer 21; forming a plurality of The light-emitting composite layer 22 is on the first type semiconductor layer 21. The light-emitting composite layer 22 has an active layer 23, a first grating layer 24A and a second grating layer 24B. The active layer 23 is the light-emitting layer, forming When forming the light-emitting composite layer 22, the first grating layer 24A and the second grating layer 24B may be formed first and then the active layer 23 may be formed, or the active layer 23 may be formed first and then the first grating layer 24A and the second grating layer 24B may be formed; and, a plurality of The second-type semiconductor layer 25 is on the light-emitting composite layer 22. The first-type semiconductor layer 21 and the second-type semiconductor layer 25 are N-type and P-type semiconductors respectively. The light-emitting composite layer 22 and the second-type semiconductor layer 25 are opposite to the first-type semiconductor layer 21 and the second-type semiconductor layer 25. The type semiconductor layer 21 is ridge-shaped and is defined as ridge units 26. That is, compared with the first-type semiconductor, the ridge units 26 have a spacing between them and are formed adjacent to each other in the first-type semiconductor. on layer 21. The first grating layer 24A and the second grating layer 24B having a target period are expected to be formed, and the first grating layer 24A having a first preset period and the second grating layer 24B having a second preset period are expected to be formed corresponding to the target period, and A first grating layer 24A with a first actual period and a second grating layer 24B with a second actual period are actually formed; wherein the first preset period is smaller than the target period, and the second preset period is larger than the target period; and, forming a complex number The insulating layer 27 is between the ridge units 26; in the process design, it is expected that the first grating layer 24A and the second grating layer 24B will be formed with a target period, and corresponding to the target period, a first predetermined period and a second predetermined period are designed. Preset period.

In other words, during the process design, it is first expected that there will be a first grating layer 24A and a second grating layer 24B of the target period when the product is completed, and two more periods will be added, namely the first preset period and the second preset period. , these two periods will respectively fall near the target period; to explain in more detail, the first preset period and the second preset period are respectively smaller and larger than the target period, or respectively larger and smaller than the target period; further speaking, , the first preset period and the target period are subtracted to the first drop point gap, the second preset period and the target period are subtracted to the second drop point gap, the first drop point difference is smaller than the second drop point difference, or the second drop point difference The first drop point difference is larger than the second drop point difference. This part can be adjusted according to the actual production process conditions, so that the first grating layer 24A and the second grating layer 24B of the finished product can be adjusted according to the design. A preset period and a second preset period are formed, and the first preset period and the second preset period are respectively smaller and larger than or larger than or smaller than the target period corresponding to each other.

Please refer to FIG. 6 , which is a flow chart of a manufacturing method of a distributed feedback laser light-emitting structure according to another embodiment of the present invention. The distributed feedback laser light-emitting structure is fabricated on a semiconductor epitaxial wafer. The manufacturing method of the distributed feedback laser light-emitting structure in this embodiment includes the following steps:

Step S61: Form a first-type semiconductor layer.

Step S62: Form a plurality of luminescent composite layers on the first type semiconductor layer. The luminescent composite layer has an active layer, a first grating layer and a second grating layer. It is expected to form a first grating layer and a second grating layer with a target period, corresponding to The target period is expected to form a first grating layer with a first preset period and a second grating layer with a second preset period. The first preset period is smaller than the target period and the second preset period is larger than the target period, and in the finished product It includes a first grating layer with a first real period and a second grating layer with a second real period.

Step S63: Form a plurality of second-type semiconductor layers on the light-emitting composite layer. The second-type semiconductor layers are ridge-shaped relative to the light-emitting composite layer.

Step S64: Form a plurality of insulating layers between the second-type semiconductor layers.

In one embodiment of the present invention, multiple grating layers with different periods can be designed on a semiconductor epitaxial wafer to design the DFB wavelength. The different periods of each grating layer can be used to select wavelengths. The advantage is that there is no need to modify the epitaxial crystal again during the product process design stage. In other words, as long as the grating design is modified, the present invention provides a new manufacturing method without affecting the number of manufacturing processes.

As described in the above embodiments of the present invention, the ridge structure can be a platform type or a buried type. On the other hand, based on optical characteristics and reliability considerations, the ridge width can be formed in the range of 1.3~2.0μm. The light source area, that is, the active layer in the light-emitting composite layer, can be AlInGaAs-base, InGaAsP-base or It is InGaAlN-base, and its applications cover DML (Directly modulated laser), EML (Electro-absorption modulated laser) and CML (Continuous-wave laser).

It can be seen that the present invention has indeed achieved the desired improvement effect by breaking through the previous technology, and it is not easy to imagine by those who are familiar with this technology. Its progress and practicality clearly meet the requirements for patent application. I have filed a patent application in accordance with the law, and I sincerely request your office to approve this invention patent application to encourage creation, and I would like to express my gratitude to you.

The above is only illustrative and not restrictive. Any other equivalent modifications or changes that do not depart from the spirit and scope of the invention should be included in the appended patent application scope.

11: First type semiconductor layer

12: Luminous composite layer

13:Active layer

14A: First grating layer

14B: Second grating layer

15: Second type semiconductor layer

Claims (12)

A method for manufacturing a distributed feedback laser luminescence structure. The distributed feedback laser luminescence structure is manufactured on a semiconductor epitaxial wafer, including: forming a first type semiconductor layer; forming a luminescent composite layer on the first On the type semiconductor layer, the light-emitting composite layer has an active layer, a first grating layer and a second grating layer. It is expected to form the first grating layer and the second grating layer with a target period, corresponding to the target period. The first grating layer having a first preset period and the second grating layer having a second preset period are formed, and the finished product includes the first grating layer having a first actual period and having a first The second grating layer has two actual periods, the first preset period and the second preset period are respectively smaller than and larger than the target period corresponding to each other; and a plurality of second-type semiconductor layers are formed on the light-emitting composite layer, the The second-type semiconductor layers are ridge-shaped relative to the light-emitting composite layer. The manufacturing method of the distributed feedback laser light-emitting structure as described in claim 1, wherein a light emitted from the light-emitting composite layer has a first wavelength and a second wavelength through the second-type semiconductor layers. The wavelengths of light correspond to the first actual period and the second actual period respectively. The manufacturing method of the distributed feedback laser light-emitting structure as described in claim 1, wherein the first preset period and the target period width are subtracted to a first landing point difference, and the second preset period and the target period width are The periods are subtracted to a second landing point difference, and the first landing point difference is smaller than the second landing point difference. The manufacturing method of the distributed feedback laser light-emitting structure as described in claim 1, wherein the width of a ridge of each second-type semiconductor layer is between 1.3~2.0 μm. The manufacturing method of the distributed feedback laser luminescent structure as described in claim 1, wherein the luminescence wavelength variation of the light generated by the luminescent composite layer through the distributed feedback laser luminescent structure will be between ±1.5~2nm. The manufacturing method of the distributed feedback laser light-emitting structure as described in claim 1, wherein the first grating layer and the second grating layer are formed through an electron beam lithography technology. A method for manufacturing a distributed feedback laser luminescence structure. The distributed feedback laser luminescence structure is made on a semiconductor epitaxial wafer, including: forming a first type semiconductor layer; forming a plurality of luminescent composite layers on the first On the type semiconductor layer, the light-emitting composite layer has an active layer, a first grating layer and a second grating layer. It is expected to form the first grating layer and the second grating layer with a target period, corresponding to the target period. Forming the first grating layer with a first preset period and the second grating layer with a second preset period, the first preset period being smaller than the target period and the second preset period being larger than the target period , and the finished product includes the first grating layer with a first actual period and the second grating layer with a second actual period; forming a plurality of second-type semiconductor layers on the light-emitting composite layer, the second The first-type semiconductor layer is ridge-shaped relative to the light-emitting composite layer; and a plurality of insulating layers are formed between the second-type semiconductor layers. The manufacturing method of the distributed feedback laser light-emitting structure as described in claim 7, wherein a light emitted from the light-emitting composite layer has a first wavelength and a second wavelength through the second-type semiconductor layers. The wavelengths of light correspond to the first actual period and the second actual period respectively. The manufacturing method of the distributed feedback laser light-emitting structure as described in claim 7, wherein the first preset period and the target period are subtracted to a first landing point difference, and the second preset period and the target period are The subtraction is a second landing point difference, and the first landing point difference is smaller than the second landing point difference. The manufacturing method of the distributed feedback laser light-emitting structure as described in claim 7, wherein the width of a ridge of each second-type semiconductor layer is between 1.3~2.0 μm. The manufacturing method of the distributed feedback laser luminescence structure as described in claim 7, wherein the luminescence wavelength variation of the light generated by the luminescent composite layer through the distributed feedback laser luminescence structure will be in the range of ±1.5~2nm. The manufacturing method of the distributed feedback laser light-emitting structure as described in claim 7, wherein the first grating layer and the second grating layer are formed through an electron beam lithography technology.

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