CN108233173A - Unsymmetric structure phase-shifted grating and DFB semiconductor laser - Google Patents
Unsymmetric structure phase-shifted grating and DFB semiconductor laser Download PDFInfo
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- CN108233173A CN108233173A CN201611201528.0A CN201611201528A CN108233173A CN 108233173 A CN108233173 A CN 108233173A CN 201611201528 A CN201611201528 A CN 201611201528A CN 108233173 A CN108233173 A CN 108233173A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Abstract
This application discloses a kind of unsymmetric structure phase-shifted grating and DFB semiconductor lasers, the phase-shifted grating includes the phase-shift structure positioned at phase-shifted grating non-central location and the first grating and the second grating positioned at phase-shift structure both sides, the etching depth of first grating and the second grating is equal, and grating duty ratio is equal or the sum of grating duty ratio is equal to 1, the length of first grating and the second grating is different, neighbouring phase-shift structure both sides are the first chirp grating and the second chirp grating of certain length in first grating and the second grating, first chirp grating and the second chirp grating are symmetrical along phase-shift structure, and first chirp grating and the second chirp grating screen periods along being gradually changed towards phase-shift structure direction.The application can realize the asymmetric output of luminous power, improve the Output optical power of laser；Reduce the index modulation near phase-shift structure, effectively weaken the influence of effects of spatial, improve the single mode stability of laser.
Description
Technical field
The application belongs to semiconductor laser field, and in particular to a kind of unsymmetric structure phase-shifted grating and DFB half
Conductor laser.
Background technology
Distributed feed-back (DFB) semiconductor laser, has become essential light source in optical communication network, in DWDM and
It plays an important role in the various wavelength-division multiplex systems such as CWDM.
For active optic communication device, either in optical communication network still in photon integrated chip, distributed feed-back
(DFB) semiconductor laser is favored due to its good unimodular property.The DFB semiconductor laser of early stage, refractive index
It is by periodically homogeneous modulation, this laser is in bragg wavelength both sides, and symmetrically there are two loss of resonator phases
Same and minimum pattern, referred to as both of which degeneracy, if introducing a quarter-wave (λ/4) at the center of grating
Phase shift, it is possible to eliminate bimodulus degeneracy.The great advantage of this method is that its mode threshold gain inequality is big, can realize true
Positive dynamic single mode work, this is the effective ways for realizing single mode laser operation, is widely used in optical communication system.
In DFB semiconductor laser, in the case of same external Injection Current, needing to obtain as much as possible larger has
Luminous power is imitated, improves the utilization rate to Injection Current.In order to increase effective Output optical power of DFB semiconductor laser, usually
Unsymmetric structure is introduced into phase-shifted grating DFB semiconductor laser, common unsymmetric structure has：
1) the reflectivity size of two light output ends is asymmetric, i.e., highly reflecting films (HR) are plated on laser end face, another
The mode of coating anti reflection film (AR) realizes the asymmetry of both ends of the surface reflectivity on end face, reaches change DFB semiconductor laser
The purpose of the ratio between the output power of both ends of the surface；
2) grating phase shift is deviateed into filters center position, is biased to laser output.
It is that can plate highly reflecting films (HR) in laser end face if laser is discrete device for structure 1,
Another end face plates the mode of anti-reflective film (AR) to distribute the output laser power of two end faces of laser, but highly reflecting films
The influence of random phase can be brought, leads to laser mode hopping, the negative effect that random phase generates laser is unable to control, mesh
Preceding not yet find effectively solves the method that random phase influences.In addition, for following photon integrated chip, i.e., various photonic devices
The chip integrated by selection region growth technology or docking growing technology, can not be realized by the method for plated film
The asymmetric output of Distributed Feedback Laser both ends of the surface laser.For structure 2, phase shift deviates center and is biased to laser output, though energy
Improve the luminous power of output terminal, but phase shift deviates center can aggravate the influence of effects of spatial, reduce single mode stability and into
Product rate.
Invention content
A kind of unsymmetric structure phase-shifted grating of the application, the phase-shifted grating are included positioned at phase-shifted grating non-central location
The etching of phase-shift structure and the first grating and the second grating positioned at phase-shift structure both sides, first grating and the second grating is deep
It spends that equal and grating duty ratio is equal or the sum of grating duty ratio is equal to 1, the length of first grating and the second grating is not
Together, in the first grating and the second grating neighbouring phase-shift structure both sides be certain length the first chirp grating and the second chirped light
Grid, the first chirp grating and the second chirp grating are symmetrical along phase-shift structure, and the first chirp grating and the second chirp grating
Screen periods along being gradually changed towards phase-shift structure direction.
In one embodiment, the phase-shift phase of the phase-shift structure is 0, λ/4, λ/8 or output wavelength that λ, λ are phase-shifted grating.
In one embodiment, the duty ratio of first grating and the second grating is the arbitrary value and the two in the range of (0,1)
Duty ratio is equal or the duty ratio of the first grating and the second grating is respectively in (0,0.5) and (0.5,1) range and sum of the two etc.
In 1.
In one embodiment, the length ratio of first grating and the second grating meets 1<L1:L2≤ 3, L1And L2Respectively
The length of first grating and the second grating.
In one embodiment, the length of first chirp grating and the second chirp grating is the grating of the first chirp grating
Period edge is towards phase-shift structure direction by Λ1Gradually increase to Λ0, the screen periods of the second chirp grating are along towards phase-shift structure
Direction is by Λ2Gradually increase to Λ0, wherein, Λ1=Λ2≠Λ0。
Another embodiment of the application provides a kind of DFB semiconductor laser, and the DFB semiconductor laser swashs including DFB
Optical cavity and several epitaxial layers above and below DFB laser cavities, DFB laser cavities include the grating set gradually etching and prevent
Layer, phase-shifted grating, grating coating, the phase-shifted grating include being located at the phase-shift structure of phase-shifted grating non-central location and be located at
The etching depth of the first grating and the second grating of phase-shift structure both sides, first grating and the second grating is equal and grating
Duty ratio is equal or the sum of grating duty ratio is equal to 1, and the length of first grating and the second grating is different, the first grating and the
Neighbouring phase-shift structure both sides are the first chirp grating and the second chirp grating of certain length in two gratings, the first chirp grating and
Second chirp grating is symmetrical along phase-shift structure, and the screen periods of the first chirp grating and the second chirp grating are along towards phase
It moves structure direction to gradually change, the output power of DFB semiconductor laser both ends of the surface is unequal, to increase dfb semiconductor laser
Effective Output optical power of device.
In one embodiment, the length ratio of first grating and the second grating meets 1<L1:L2≤ 3, L1And L2Respectively
The length of first grating and the second grating.
In one embodiment, the length of first chirp grating and the second chirp grating is the grating of the first chirp grating
Period edge is towards phase-shift structure direction by Λ1Gradually increase to Λ0, the screen periods of the second chirp grating are along towards phase-shift structure
Direction is by Λ2Gradually increase to Λ0, wherein, Λ1=Λ2≠Λ0。
In one embodiment, the both sides of the face of the DFB semiconductor laser are coated with anti-reflective film.
In one embodiment, the DFB semiconductor laser is buried heterostructure type laser or ridge waveguide lasers.
Compared with prior art, the application has the advantages that：
The length of the first grating and the second grating is different in phase-shifted grating, to realize the different coefficients of coup, realizes luminous power
Asymmetric output improves the Output optical power of laser；
Neighbouring phase-shift structure both sides are the chirp grating of certain length in first grating and the second grating, and screen periods are along direction
Phase-shift structure direction gradually changes, and can reduce the index modulation near phase-shift structure, effectively weakens the shadow of effects of spatial
It rings, improves the single mode stability of laser.
Description of the drawings
Fig. 1 is the structure diagram of unsymmetric structure phase-shifted grating in the prior art；
Fig. 2 is the curve graph of the grating coefficient of coup and duty cycle relationship；
Fig. 3 is the structure diagram of unsymmetric structure phase-shifted grating in the application first embodiment；
Fig. 4 is the dimensional structure diagram of DFB semiconductor laser in the application second embodiment；
Fig. 5 is the side structure schematic view of DFB semiconductor laser in the application second embodiment.
Specific embodiment
The application is described in detail below with reference to specific embodiment shown in the drawings.But these embodiments are simultaneously
The application is not limited, structure that those of ordinary skill in the art are made according to these embodiments, method or functionally
Transformation is all contained in the protection domain of the application.
In each diagram of the application, for the ease of illustration, structure or partial certain sizes can be relative to other knots
Therefore structure or partial enlargement, are only used for the basic structure of the theme of diagram the application.
The term of the representation space relative position used herein such as "left", "right", " left side ", " right side " is for just
A unit as shown in the drawings or feature are described relative to another unit or the relationship of feature in the purpose of explanation.It is empty
Between the term of relative position can be intended to include different direction of the equipment in using or working other than orientation shown in figure.
If for example, the equipment in figure is overturn, other will be located at by being described as being located at the unit of other units or feature " right side "
Unit or feature " left side ".Therefore, exemplary term " right side " can include left side and both orientation of right side.Equipment can be with
Other modes are directed（It is rotated by 90 ° or other directions）, and correspondingly explain used herein and space correlation description.
Join shown in Fig. 1, introduce unsymmetric structure phase-shifted grating 10 ' of the prior art.The phase-shifted grating 10 ' is including being located at
The phase-shift structure 11 ' of phase-shifted grating non-central location and the first grating 12 ' and the second grating 13 ' positioned at phase-shift structure both sides.
The first grating 12 ' and the second grating 13 ' are along the asymmetric setting of phase-shift structure 11 ', the first grating 12 ' in the prior art
With the length L of the second grating 13 '1' and L2' different, phase-shift structure 11 ' is biased to the second grating 13 ' of right side laser output, i.e.,
L1’>L2', etching depth H1' and H2' identical, periods lambda1' and Λ2' equal, duty ratio γ1' and γ2' also equal.
Wherein, the duty ratio ratio shared in a cycle Λ for grating tooth width degree b, as shown in Figure 1, the first grating
12 ' duty ratio γ1’=b1’/Λ1', the duty ratio γ of the second grating 13 '2’=b2’/Λ2', wherein, grating tooth width degree b1’=
b2', periods lambda1’=Λ2', and H1’=H2', therefore, the duty ratio of the duty ratio of the first grating 12 ' and the second grating 13 ' is equal,
That is γ1’=γ2’。
Fig. 2 show the curve graph of the grating coefficient of coup and duty cycle relationship, it can be seen that the coefficient of coup and duty ratio have
Correspondence, for pure index-coupled type DFB semiconductor laser, coefficient of coup κ is proportional to sin (π γ), wherein, κ
For the coefficient of coup of phase-shifted grating, the power of grating feedback is represented, γ is the duty ratio of phase-shifted grating.In identical etching depth
Under the conditions of, if the duty ratio γ of the first grating 12 ' and the second grating 13 '1' and γ2' equal, the first grating 12 ' and the second grating
13 ' coefficient of coup κ1' and κ2' also equal；In addition, under the conditions of identical etching depth, the first grating 12 ' and the second grating
13 ' duty ratio γ1' and γ2' meet γ1’+γ2During '=1, the coefficient of coup κ of the first grating 12 ' and the second grating 13 '1' and
κ2' also equal.
Based on the DFB semiconductor laser of phase-shifted grating 10 ' in the prior art, in DFB semiconductor laser both ends of the surface all
Coating anti reflection film（AR, reflectivity are less than 1%）Or not in the case of plated film, pass through the first grating 12 ' and the second grating 13 '
Length L1' and L2' different, two end face Output optical power P1' and P2' differ, and P1' ＜ P2', it is defeated can effectively to increase right side
Light power, but the phase-shift structure 11 ' deviateed behind center exacerbates influence of the effects of spatial to unimodular property, so as to
The single mode stability for leading to the laser is poor.
Join the first embodiment for shown in Fig. 3, introducing the application unsymmetric structure phase-shifted grating 10.The phase-shifted grating 10 wraps
Include the phase-shift structure 11 positioned at phase-shifted grating center and the first grating 12 and the second grating 13 positioned at phase-shift structure both sides.
Phase-shift structure 11 is true phase shift, and phase-shift phase can be 0（Uniform grating）, λ/4, λ/8 or λ, or other numerical value
Phase-shift phase, wherein λ are the output wavelength of phase-shifted grating.The phase-shift structure of phase-shifted grating is true phase shift in the application, with taking
Equivalent phase shift in sample grating is different, and the phase-shifted grating based on true phase shift is applied to the dfb semiconductor laser of unsymmetric structure
During device, coupling efficiency is applied to the dfb semiconductor laser of unsymmetric structure than the sampled-grating based on equivalent phase shift in laser cavity
The coupling efficiency of device is big, chamber length, and the DFB semiconductor laser modulating performance is more preferable.Preferably, the phase shift in present embodiment
Amount is illustrated by taking λ/4 as an example.
First grating 12 and the second grating 13 along 11 asymmetric setting of phase-shift structure, the first grating 12 and the second grating 13
Etching depth H1And H2It is equal, duty ratio γ1And γ2Equal or duty ratio γ1、γ2The sum of be equal to 1, but the first grating 12 and the
The length L of two gratings 131And L2Neighbouring 11 both sides of phase-shift structure are certain length in difference, the first grating 12 and the second grating 13
The first chirp grating 121 and the second chirp grating 131, the first chirp grating 121 and the second chirp grating 132 are along phase-shift structure
Symmetrical, length is L0, and the grating period A of the first chirp grating 121 and the second chirp grating 131 is along towards phase
It moves structure direction to gradually change, the first chirp grating 121 and the second chirp grating is removed in the first grating 12 and the second grating 13
Grating part other than 131, grating tooth and screen periods are equal.
Wherein, duty ratio is grating tooth width degree shared ratio in one cycle, as shown in figure 3, the first grating 12
Duty ratio γ1=b1/Λ1, the duty ratio γ of the second grating 132=b2/Λ2, γ in present embodiment1=γ2.In the first chirp grating
In 121, screen periods edge is towards phase-shift structure direction by Λ1Gradually increase to Λ0, by designing grating tooth width degree, make the first Zhou
Sing grating 121 duty ratio be equal to remaining grating section duty ratio；In second chirp grating 131, screen periods are along towards phase shift
Structure direction is by Λ2Gradually increase to Λ0, by designing grating tooth width degree, the duty ratio of the second chirp grating 131 is made to be equal to it
The duty ratio of remaining light grid section.
Since coefficient of coup κ is proportional to sin (π γ), wherein, κ is the coefficient of coup of phase-shifted grating, represents grating feedback
Power, γ are the duty ratio of phase-shifted grating, meanwhile, coefficient of coup κ is also proportional to the etching depth H of grating.In present embodiment
Under conditions of sin (π γ) and etching depth are equal, by length and the grating week for controlling the first grating 12 and the second grating 13
Phase, to realize two end face Output optical power P1And P2Differ.
Present invention contemplates that influence of the grating length to the grating coefficient of coup, therefore it need to ensure that the value of sin (π γ) is fixed
It is worth and etching depth is equal, i.e. sin (π γ1)= sin(πγ2)、H1=H2.As seen from Figure 2, sin (π γ1)= sin(π
γ2) including following two kinds of situations：
1）, the first grating 12 duty ratio γ1With the duty ratio γ of the second grating 132Meet γ1=γ2, i.e. b1/Λ1=b2/Λ2,
For example, γ1=γ2=0.5, in Λ1=Λ2In the case of, the thickness b of the first grating 12 need to be controlled1Equal to the thickness of the second grating 13
Spend b2；
2）, the first grating 12 duty ratio γ1With the duty ratio γ of the second grating 132Meet γ1+γ2=1, i.e. b1/Λ1+b2/
Λ2=1, for example, γ1=0.4, γ2=0.6, in Λ1=Λ2In the case of, the thickness b of the first grating 12 need to be controlled1With the second light
The thickness b of grid 132The sum of be equal to the first grating periods lambda1（That is the periods lambda of the second grating2）；
Therefore, in above-mentioned sin (π γ1)= sin(πγ2) under conditions of, by designing the first grating of phase-shift structure both sides and
The length of two gratings, you can the different coefficient of coup of phase-shift structure both sides grating is realized, using the dfb semiconductor of the phase-shifted grating
Laser can realize that the Output optical power at both ends is different.
Preferably, in present embodiment the first grating 12 length L1More than the length L of the second grating 132, and meet 1<
L1:L2≤ 3, in this way, the Output optical power P of 13 1 side end face of the second grating2More than the output light work(of 12 1 side end face of the first grating
Rate P1, i.e. P2:P1＞ 1, by designing L1:L2Value can adjust the asymmetry of both sides Output optical power, increase effective output light
Power.
Meanwhile the screen periods of the first grating 12 and the second grating 13 are non-constant in present embodiment.Specifically, first
Grating 12 adjacent to 11 side of phase-shift structure be the first chirp grating 121, the length of L0, screen periods are along towards phase-shift structure side
To by Λ1Gradually increase to Λ0, the first chirp grating 121 is constant for Λ with outer portion screen periods in the first grating 121；Second
Grating 13 adjacent to 11 side of phase-shift structure be the second chirp grating 131, the length of L0, screen periods are along towards phase-shift structure side
To by Λ2Gradually increase to Λ0, the second chirp grating 131 is constant for Λ with outer portion screen periods in the second grating 132；And this
Λ in embodiment1=Λ2＜ Λ0。
Since phase-shift structure both sides introduce the chirp grating that screen periods gradually change, chirp grating edge in present embodiment
Gradually increase towards phase-shift structure direction, index modulation is gradually reduced by two lateral phase shifts, so as to reduce near phase-shift structure
Index modulation, effectively weaken effects of spatial influence.
It should be understood that in present embodiment the first grating 12 length L1With the length L of the second grating 132, the first Zhou
It sings 121 and second chirp grating of grating, 131 length L0, the first chirp grating 121 and the second chirp grating 131 period profile can
To be designed as needed, however it is not limited to the range protected in present embodiment.
By designing the length of the first grating of phase-shift structure both sides and the second grating in present embodiment, you can realize phase shift
The grating different coefficient of coup in structure both sides can realize the output light at both ends using the DFB semiconductor laser of the phase-shifted grating
Power is different, meanwhile, by introducing the chirp grating that the phase-shift structure both sides period gradually changes, can reduce near phase-shift structure
Index modulation effectively weakens the influence of effects of spatial.
Join the second embodiment for shown in Fig. 4, Fig. 5, introducing the application DFB semiconductor laser 100.The dfb semiconductor
Laser includes DFB laser cavities and several epitaxial layers above and below DFB laser cavities, and DFB laser cavities include setting successively
Grating etching barrier layer 20, phase-shifted grating 10, the grating coating 30 put, the interior grating for playing modeling of DFB laser cavities is phase
Shifted raster 10, wherein, phase-shifted grating 10 is identical with the unsymmetric structure phase-shifted grating 10 in second embodiment, herein not
It is repeated again.The length of first grating and the second grating is different in phase-shifted grating 10, to realize the different coefficients of coup, DFB
The Output optical power at semiconductor laser both ends is different, meanwhile, neighbouring phase-shift structure both sides one in the first grating and the second grating
The chirp grating of measured length can reduce the index modulation near phase-shift structure, effectively weaken the influence of effects of spatial.
Formation of the DFB semiconductor laser above and below DFB laser cavities has several epitaxial layers, such as present embodiment
In, the epitaxial layer below DFB laser cavities includes substrate 31, buffer layer 32, lower limit layer 33, multiple quantum well layer 34 and upper limiting layer
Epitaxial layer above 35, DFB laser cavities includes vallum etching barrier layer 41, vallum layer 42 and ohmic contact layer 43, in addition, DFB
Semiconductor laser further includes the N electrode 51 below substrate and the P electrode above ohmic contact layer 43 52.
The epitaxial material of epitaxial layer be III-V race's compound semiconductor material and IV-VI race's compound semiconductor material, such as
InGaAsP/InP, InAlGaAs/InP, AlGaAs/GaAs, InGaAs/InGaP, GaAsP/InGaP etc..
DFB semiconductor laser in present embodiment is according only to the length for needing design phase-shift structure or so two sections of gratings
And screen periods, and the techniques such as DFB semiconductor laser epitaxial structure and electrode preparation are same as the prior art, below to this
The preparation process of DFB semiconductor laser is described in detail in embodiment.
Pass through MOCVD epitaxy technology, in N-shaped InP substrate 31, epitaxial growth successively：
N-shaped InP is as buffer layer 32；
InAlGaAs graded indexs detach lower limit layer 33；
InAlGaAs multiple quantum well layers 34；
InAlGaAs graded indexs detach upper limiting layer 35；
P-type InP gratings etching barrier layer 20；
P-type InGaAsP phase-shifted gratings 10；
P-type InP gratings coating 30；
P-type InGaAsP vallums etching barrier layer 41；
P-type InP vallums layer 42, it is preferable that illustrated by taking double ditch vallums as an example in present embodiment；
InGaAsP ohmic contact layers 43.
Finally P electrode 52 and N electrode 51 are respectively formed with 31 back side of InP substrate on InGaAsP ohmic contact layers 43.
In above-mentioned 100 both ends of the surface of DFB semiconductor laser all coating anti reflection films（AR, reflectivity are less than 1%）In the case of,
Two end face Output optical power P1And P2It differs, you can realize the asymmetry of Output optical power, increase DFB semiconductor laser
Effective Output optical power.The chirp grating gradually changed additionally by screen periods are introduced, can reduce the folding near phase-shift structure
Rate modulation is penetrated, effectively weakens the influence of effects of spatial.
DFB semiconductor laser in present embodiment is illustrated by taking ridge waveguide structure as an example, in other embodiment party
Buried heterostructure type structure can also be designed in formula, no longer citing is described in detail herein.
It should be understood that DFB semiconductor laser is applied to unsymmetric structure phase-shifted grating in the above embodiment
For illustrate, such DFB semiconductor laser can both ends of the surface carry out plated film.Photon collection in other embodiments
Into chip, such as detector array, laser array, modulator array and multiplexer photonic device, such photonic device are logical
Cross selection region growth technology or dock growing technology prepare, in integrating process, can not by plate highly reflecting films or
Anti-reflective film increases effective Output optical power, can be applied to height by the phase-shifted grating of the coefficient of coup asymmetric in the application
In the integrated photon integrated chip of degree, to improve the effective Output optical power in end face.
The application is had the advantages that by the above embodiment：
The length of the first grating and the second grating is different in phase-shifted grating, to realize the different coefficients of coup, realizes luminous power
Asymmetric output improves the Output optical power of laser；
Neighbouring phase-shift structure both sides are the chirp grating of certain length in first grating and the second grating, and screen periods are along direction
Phase-shift structure direction gradually changes, and can reduce the index modulation near phase-shift structure, effectively weakens the shadow of effects of spatial
It rings, improves the single mode stability of laser.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
For bright book as an entirety, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can
With the other embodiment of understanding.
Those listed above it is a series of be described in detail only for the application feasibility embodiment specifically
Bright, they are not limiting the protection domain of the application, all equivalent implementations made without departing from the application skill spirit
Or change should be included within the protection domain of the application.
Claims (10)
1. a kind of unsymmetric structure phase-shifted grating, which is characterized in that the phase-shifted grating includes being located at the non-central position of phase-shifted grating
The quarter of the phase-shift structure and the first grating and the second grating positioned at phase-shift structure both sides put, first grating and the second grating
It loses deep equality and grating duty ratio is equal or the sum of grating duty ratio is equal to 1, the length of first grating and the second grating
Neighbouring phase-shift structure both sides are the first chirp grating and the second chirped light of certain length in difference, the first grating and the second grating
Grid, the first chirp grating and the second chirp grating are symmetrical along phase-shift structure, and the first chirp grating and the second chirp grating
Screen periods along being gradually changed towards phase-shift structure direction.
2. unsymmetric structure phase-shifted grating according to claim 1, which is characterized in that the phase-shift phase of the phase-shift structure is
0th, λ/4, λ/8 or λ, λ are the output wavelength of phase-shifted grating.
3. unsymmetric structure phase-shifted grating according to claim 1, which is characterized in that first grating and the second grating
Duty ratio is the arbitrary value in the range of (0,1) and the two duty ratio is equal or the duty score of the first grating and the second grating
It is not equal to 1 in (0,0.5) and (0.5,1) range and sum of the two.
4. the unsymmetric structure phase-shifted grating according to any one of claim 1 ~ 3, which is characterized in that first grating
Meet 1 with the length ratio of the second grating<L1:L2≤ 3, L1And L2The respectively length of the first grating and the second grating.
5. unsymmetric structure phase-shifted grating according to claim 4, which is characterized in that first chirp grating and second
The length of chirp grating is ^, the screen periods of the first chirp grating along towards phase-shift structure direction by Λ1Gradually increase to Λ0,
The screen periods edge of second chirp grating is towards phase-shift structure direction by Λ2Gradually increase to Λ0, wherein, Λ1=Λ2≠Λ0。
6. a kind of DFB semiconductor laser, the DFB semiconductor laser includes DFB laser cavities and above DFB laser cavity
With several epitaxial layers of lower section, DFB laser cavities include the grating etching barrier layer, phase-shifted grating, the grating coating that set gradually,
It is characterized in that, the phase-shifted grating is included positioned at the phase-shift structure of phase-shifted grating non-central location and positioned at phase-shift structure both sides
The first grating and the second grating, the etching depth of first grating and the second grating is equal and grating duty ratio is equal or
For the sum of grating duty ratio equal to 1, the length of first grating and the second grating is different, neighbouring in the first grating and the second grating
Phase-shift structure both sides are the first chirp grating and the second chirp grating of certain length, the first chirp grating and the second chirp grating
It is symmetrical along phase-shift structure, and the screen periods of the first chirp grating and the second chirp grating along towards phase-shift structure direction by
Gradual change, the output power of DFB semiconductor laser both ends of the surface is unequal, to increase effective output of DFB semiconductor laser
Luminous power.
7. DFB semiconductor laser according to claim 6, which is characterized in that first grating and the second grating
Length ratio meets 1<L1:L2≤ 3, L1And L2The respectively length of the first grating and the second grating.
8. DFB semiconductor laser according to claim 7, which is characterized in that first chirp grating and the 2nd Zhou
The length of grating of singing is, the screen periods of the first chirp grating along towards phase-shift structure direction by Λ1Gradually increase to Λ0, second
The screen periods edge of chirp grating is towards phase-shift structure direction by Λ2Gradually increase to Λ0, wherein, Λ1=Λ2≠Λ0。
9. DFB semiconductor laser according to claim 6, which is characterized in that the both sides of the DFB semiconductor laser
End face is coated with anti-reflective film.
10. DFB semiconductor laser according to claim 6, which is characterized in that the DFB semiconductor laser is covers
Bury heterojunction type laser or ridge waveguide lasers.
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| CN108768526A (en) * | 2018-07-16 | 2018-11-06 | 深圳太辰光通信股份有限公司 | Production method, direction tracing device and the passive network of bidirectional optical fiber grating |
| WO2020014814A1 (en) * | 2018-07-16 | 2020-01-23 | 深圳太辰光通信股份有限公司 | Method for manufacturing bidirectional fiber grating, bidirectional tracker, and passive network |
| CN111600198A (en) * | 2020-05-26 | 2020-08-28 | 陕西源杰半导体技术有限公司 | Ultra-high-power laser for communication and preparation method thereof |
| TWI822178B (en) * | 2022-07-13 | 2023-11-11 | 華星光通科技股份有限公司 | A method for manufacturing distributed feedback laser light emitting structure |
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| CN103337788A (en) * | 2013-04-24 | 2013-10-02 | 南京大学 | DFB semiconductor laser based on asymmetric structure of reconstruction-equivalent chirp and preparation method thereof |
| CN103762500A (en) * | 2013-11-27 | 2014-04-30 | 南京大学 | Asymmetric equivalent apodization sampling optical grating and laser based on reconstruction-equivalent chirp |
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| CN103762500A (en) * | 2013-11-27 | 2014-04-30 | 南京大学 | Asymmetric equivalent apodization sampling optical grating and laser based on reconstruction-equivalent chirp |
| CN104917051A (en) * | 2015-05-29 | 2015-09-16 | 江苏微宁科技有限公司 | Distributed coupling coefficient DFB laser based on reconstruction-equivalent chirp technology and array thereof |
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Cited By (4)
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| CN108768526A (en) * | 2018-07-16 | 2018-11-06 | 深圳太辰光通信股份有限公司 | Production method, direction tracing device and the passive network of bidirectional optical fiber grating |
| WO2020014814A1 (en) * | 2018-07-16 | 2020-01-23 | 深圳太辰光通信股份有限公司 | Method for manufacturing bidirectional fiber grating, bidirectional tracker, and passive network |
| CN111600198A (en) * | 2020-05-26 | 2020-08-28 | 陕西源杰半导体技术有限公司 | Ultra-high-power laser for communication and preparation method thereof |
| TWI822178B (en) * | 2022-07-13 | 2023-11-11 | 華星光通科技股份有限公司 | A method for manufacturing distributed feedback laser light emitting structure |
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Application publication date: 20180629 |