TWI821614B - Plasma etching device and working method thereof - Google Patents
Plasma etching device and working method thereof Download PDFInfo
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- TWI821614B TWI821614B TW109140828A TW109140828A TWI821614B TW I821614 B TWI821614 B TW I821614B TW 109140828 A TW109140828 A TW 109140828A TW 109140828 A TW109140828 A TW 109140828A TW I821614 B TWI821614 B TW I821614B
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 83
- 238000001816 cooling Methods 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000012530 fluid Substances 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
本發明涉及一種等離子體蝕刻裝置及其工作方法。等離子體蝕刻裝置包括反應腔、上電極元件、冷卻器件、第一驅動裝置及加熱器件；反應腔內具有放置待處理基片的基座；上電極元件位於反應腔的頂部，並與基座相對設置。冷卻器件設置於上電極元件上；第一驅動裝置與冷卻器件連接，用於驅動冷卻器件離開或接觸上電極元件；加熱器件設置於上電極元件上，用於對上電極元件進行加熱。 The invention relates to a plasma etching device and a working method thereof. The plasma etching device includes a reaction chamber, an upper electrode element, a cooling device, a first driving device and a heating device; the reaction chamber has a base for placing the substrate to be processed; the upper electrode element is located at the top of the reaction chamber and is opposite to the base settings. The cooling device is arranged on the upper electrode element; the first driving device is connected to the cooling device and is used to drive the cooling device away from or contact the upper electrode element; the heating device is arranged on the upper electrode element and is used to heat the upper electrode element.
Description
本發明涉及半導體領域的裝置，特別涉及一種等離子體蝕刻裝置及其工作方法。 The present invention relates to devices in the semiconductor field, and in particular to a plasma etching device and a working method thereof.
在習知等離子體蝕刻製程的過程中，要求機台反應腔(電容極板)在閒置(idle)狀態和蝕刻過程(process)狀態希望保持恆定高溫狀態，所以需要加熱裝置和冷卻裝置。 In the conventional plasma etching process, the reaction chamber (capacitor plate) of the machine is required to maintain a constant high temperature state in the idle state and the etching process state, so a heating device and a cooling device are required.
目前的冷卻裝置始終處於工作狀態，在閒置狀態的時候就需要大功率的加熱裝置才能保持反應腔(電容極板)的高溫，因為冷卻裝置帶走部分熱量。 The current cooling device is always in working state. When idle, a high-power heating device is required to maintain the high temperature of the reaction chamber (capacitor plate), because the cooling device takes away some of the heat.
在蝕刻過程狀態，等離子也會使反應腔(電容極板)溫度上升，想要使反應腔保持恆定高溫，就需要通過冷卻能力較強的冷卻裝置把多餘的熱量儘快帶走。然而，習知的等離子體蝕刻裝置中冷卻裝置始終處於工作狀態，使得等離子體蝕刻裝置在閒置狀態的時候就需要大功率的加熱裝置才能保持反應腔(電容極板)內溫度的恆定。 During the etching process, plasma will also increase the temperature of the reaction chamber (capacitor plate). If you want to keep the reaction chamber at a constant high temperature, you need to use a cooling device with strong cooling capacity to take away the excess heat as quickly as possible. However, the cooling device in the conventional plasma etching device is always in operation, so that when the plasma etching device is idle, a high-power heating device is needed to maintain a constant temperature in the reaction chamber (capacitor plate).
然而，大功率加熱裝置會受限於設計空間或發熱功率，使得加熱器的壽命受影響，且浪費電能。 However, high-power heating devices are limited in design space or heating power, which affects the life of the heater and wastes electrical energy.
本發明的目的在於提供一種等離子體蝕刻裝置及其工作方法，用以解決前述背景技術中所面臨在反應腔閒置狀態保持恆定高溫狀態時所產生的加熱器的壽命受影響及浪費電能等問題。 The object of the present invention is to provide a plasma etching device and a working method thereof to solve the problems faced by the background art such as the impact on the life of the heater and the waste of electric energy when the reaction chamber is idle and maintains a constant high temperature.
為了達到上述目的，本發明的第一技術方案是提供一種等離子體蝕刻裝置，包括反應腔、上電極元件、冷卻器件、第一驅動裝置及加熱器件。反應腔內具有放置待處理基片的基座。上電極元件位於反應腔的頂部，並與基座相對設置。冷卻器件設置於上電極元件上。第一驅動裝置與冷卻器件連接，用於驅動冷卻器件離開或接觸上電極元件。加熱器件設置於上電極元件上，用於對上電極元件進行加熱。 In order to achieve the above object, the first technical solution of the present invention is to provide a plasma etching device, which includes a reaction chamber, an upper electrode element, a cooling device, a first driving device and a heating device. The reaction chamber has a base for placing the substrate to be processed. The upper electrode component is located on the top of the reaction chamber and is opposite to the base. The cooling device is arranged on the upper electrode element. The first driving device is connected with the cooling device and is used to drive the cooling device away from or in contact with the upper electrode element. The heating device is arranged on the upper electrode element and used to heat the upper electrode element.
較佳地，上電極元件朝向所述冷卻器件和加熱器件的表面設置導熱片。 Preferably, a thermally conductive sheet is provided on the surface of the upper electrode element facing the cooling device and heating device.
較佳地，導熱片是柔性石墨片 Preferably, the thermal conductive sheet is a flexible graphite sheet
較佳地，冷卻器件內設置流體通道，所述流體通道內容納流體，利用流體對所述上電極元件進行冷卻。 Preferably, a fluid channel is provided in the cooling device, the fluid channel contains fluid, and the fluid is used to cool the upper electrode element.
較佳地，所述加熱器件連接第二驅動裝置，第二驅動裝置用於驅動所述加熱器件離開或接觸所述上電極元件。 Preferably, the heating device is connected to a second driving device, and the second driving device is used to drive the heating device away from or in contact with the upper electrode element.
較佳地，加熱器件設置於上電極元件上，通過控制加熱器件是否通電對上電極元件進行加熱或者不加熱 Preferably, the heating device is arranged on the upper electrode element, and the upper electrode element is heated or not heated by controlling whether the heating device is energized.
較佳地，反應腔與所述上電極元件之間設置接地襯墊。 Preferably, a ground pad is provided between the reaction chamber and the upper electrode element.
較佳地，接地襯墊所包含的材料有鋁。 Preferably, the ground pad is made of aluminum.
較佳地，反應腔與所述上電極元件之間設置隔熱襯墊。 Preferably, a thermal insulation liner is provided between the reaction chamber and the upper electrode element.
較佳地，隔熱襯墊所包含的材料有聚四氟乙烯。 Preferably, the thermal insulation liner is made of polytetrafluoroethylene.
為了達到上述目的，本發明的第二技術方案是提供一種等離子體蝕刻裝置的工作方法，包括：提供如前述技術方案中的等離子體蝕刻裝置。當等離子體蝕刻裝置內進行等離子體蝕刻製程時，通過第一驅動裝置驅動冷卻器件與上電極元件接觸，用於對上電極元件進行降溫，加熱器件不對上電極元件加熱。當等離子體蝕刻裝置內不進行等離子體蝕刻製程時，通過第一驅動裝置驅動冷卻器件離開上電極元件，不對上電極元件進行降溫，加熱器件對上電極元件進行加熱。 In order to achieve the above object, the second technical solution of the present invention is to provide a working method of a plasma etching device, which includes: providing the plasma etching device as in the foregoing technical solution. When the plasma etching process is performed in the plasma etching device, the cooling device is driven by the first driving device to contact the upper electrode element for cooling the upper electrode element, and the heating device does not heat the upper electrode element. When the plasma etching process is not performed in the plasma etching device, the cooling device is driven by the first driving device to leave the upper electrode element without cooling the upper electrode element, and the heating device heats the upper electrode element.
較佳地，當所述加熱器件連結所述第二驅動裝置時，等離子體蝕刻裝置的工作方法還包括下列步驟：當等離子體蝕刻裝置內進行等離子體蝕刻製程時，通過第一驅動裝置驅動冷卻器件與上電極元件接觸，用於對上電極元件進行降溫，通過第二驅動裝置驅動加熱器件離開上電極元件，不對上電極元件加熱。當等離子體蝕刻裝置內不進行等離子體蝕刻製程時，通過第一驅動裝置驅動冷卻器件離開上電極元件，不對上電極元件進行降溫，通過第二驅動裝置驅動加熱器件與上電極元件接觸，用於對上電極元件進行加熱。 Preferably, when the heating device is connected to the second driving device, the working method of the plasma etching device further includes the following steps: when the plasma etching process is performed in the plasma etching device, driving cooling through the first driving device The device is in contact with the upper electrode element for cooling the upper electrode element, and the second driving device drives the heating device away from the upper electrode element without heating the upper electrode element. When the plasma etching process is not performed in the plasma etching device, the cooling device is driven by the first driving device to leave the upper electrode element without cooling the upper electrode element, and the heating device is driven by the second driving device to contact the upper electrode element. The upper electrode element is heated.
較佳地，所述加熱器件設置於所述上電極元件上，通過控制所述加熱器件是否通電對所述上電極元件進行加熱或者不加熱時，等離子體蝕刻裝置的工作方法還包括下列步驟：當等離子體蝕刻裝置內進行等離子體蝕刻製程時，通過第一驅動裝置驅動冷卻器件與上電極元件接觸，用於對上電極元件進行降溫，使加熱器件斷電，不對上電極元件加熱；以及當等離子體蝕刻裝置內不進行等離子體蝕刻製程時，通過第一驅動裝置驅 動冷卻器件離開上電極元件，不對上電極元件進行降溫，使加熱器件通電，用於對上電極元件進行加熱。 Preferably, the heating device is disposed on the upper electrode element. When the upper electrode element is heated or not heated by controlling whether the heating device is energized, the working method of the plasma etching device further includes the following steps: When the plasma etching process is carried out in the plasma etching device, the cooling device is driven by the first driving device to contact the upper electrode element for cooling the upper electrode element, so that the heating device is powered off and does not heat the upper electrode element; and when When the plasma etching process is not performed in the plasma etching device, the first driving device is used to drive The cooling device moves away from the upper electrode element without cooling the upper electrode element, and the heating device is energized to heat the upper electrode element.
與習知技術相比，本發明的等離子體蝕刻裝置及其工作方法當等離子體蝕刻裝置用於進行等離子體蝕刻製程時，第一驅動裝置控制冷卻器件接觸上電極元件，冷卻器件能夠帶走多餘的熱量，就能使得反應腔保持恆定高溫狀態；當等離子體蝕刻裝置在空閒狀態時，第一驅動裝置控制冷卻器件離開上電極元件，使得冷卻器件不對上電極元件進行降溫，加熱器件只需要較小的加熱功率就能使得反應腔保持恆定高溫狀態，無須額外增大加熱器件，且達到延長加熱器件使用壽命與節約電能的功效。 Compared with the conventional technology, the plasma etching device and its working method of the present invention are used to perform a plasma etching process. The first driving device controls the cooling device to contact the upper electrode element, and the cooling device can take away excess energy. The heat of the reaction chamber can maintain a constant high temperature state; when the plasma etching device is in an idle state, the first driving device controls the cooling device to leave the upper electrode element, so that the cooling device does not cool the upper electrode element, and the heating device only needs a small amount of heat. A small heating power can keep the reaction chamber at a constant high temperature without the need for additional heating devices, and can achieve the effects of extending the service life of the heating device and saving electric energy.
100,200:等離子體蝕刻裝置 100,200:Plasma etching equipment
110:上電極元件 110: Upper electrode component
111:導熱片 111:Thermal conductor
112:氣體噴淋頭 112:Gas sprinkler head
113:氣道 113:Airway
114:氣體檔板 114:Gas baffle
121:冷卻器件 121: Cooling device
1211:流體通道 1211: Fluid channel
122:第一驅動裝置 122: First drive device
123:第一連桿 123:First connecting rod
131:加熱器件 131: Heating device
132:第二驅動裝置 132: Second drive device
133:第二連桿 133:Second connecting rod
210:反應腔 210:Reaction chamber
213:接地襯墊 213:Ground pad
214:隔熱襯墊 214:Thermal insulation pad
300:基座 300: base
400:待處理基片 400:Substrate to be processed
圖1是本發明的一種等離子體蝕刻裝置的結構示意圖；圖2是本發明的另一種等離子體蝕刻裝置的的結構示意圖；圖3是本發明的等離子體蝕刻裝置的工作流程圖；圖4是圖1等離子體處理裝置在製程過程中的結構示意圖；圖5是圖1等離子體處理裝置在空閒狀態下的結構示意圖。 Fig. 1 is a schematic structural diagram of a plasma etching device of the present invention; Fig. 2 is a schematic structural diagram of another plasma etching device of the present invention; Fig. 3 is a work flow chart of the plasma etching device of the present invention; Fig. 4 is FIG. 1 is a schematic structural diagram of the plasma processing device during the manufacturing process; FIG. 5 is a schematic structural diagram of the plasma processing device of FIG. 1 in an idle state.
為利瞭解本發明的特徵、內容與優點及其所能達成的功效，茲將本發明配合附圖，並以實施方式的表達形式詳細說明如下，而其中所使用的附圖，其主旨僅為示意及輔助說明書之用，未必為本發明實施後的真實比例與精準配置，故不應就所附的附圖式的比例與配置關係解讀、局限本發明於實際實施上的權利範圍。 In order to facilitate understanding of the characteristics, contents, advantages and effects achieved by the present invention, the present invention is described in detail below in conjunction with the accompanying drawings and in the form of embodiments. The main purpose of the drawings used is only The schematic and auxiliary descriptions are not necessarily the actual proportions and precise configurations after implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted to limit the scope of rights of the present invention in actual implementation.
圖1是本發明的一種等離子體蝕刻裝置100的結構示意圖；圖2是本發明的另一種等離子體蝕刻裝置200的結構示意圖。 FIG. 1 is a schematic structural diagram of a plasma etching device 100 of the present invention; FIG. 2 is a schematic structural diagram of another plasma etching device 200 of the present invention.
請參閱圖1及圖2，等離子體蝕刻裝置100包括：反應腔210，反應腔210內具有放置待處理基片400的基座300；上電極元件110位於所述反應腔210的頂部，並與基座300相對設置；冷卻器件121設置於所述上電極元件110上；第一驅動裝置122與所述冷卻器件121連接，用於驅動所述冷卻器件121離開或接觸所述上電極元件110；加熱器件131設置於所述上電極元件110上，用於對所述上電極元件110進行加熱。 Referring to FIGS. 1 and 2 , the plasma etching device 100 includes: a reaction chamber 210 . The reaction chamber 210 has a base 300 for placing the substrate 400 to be processed; the upper electrode element 110 is located on the top of the reaction chamber 210 and connected with the reaction chamber 210 . The base 300 is arranged oppositely; the cooling device 121 is arranged on the upper electrode element 110; the first driving device 122 is connected to the cooling device 121 and is used to drive the cooling device 121 away from or contact the upper electrode element 110; The heating device 131 is disposed on the upper electrode element 110 for heating the upper electrode element 110 .
其中，上電極元件110包括氣體噴淋頭112、複數個氣道113、氣體檔板114。氣體噴淋頭112設置在上電極元件110上，用於向反應腔210內噴淋反應氣體。上電極元件110內還包含氣路連接設置在外部的氣體供應裝置與氣體噴淋頭112之間的複數個氣道113。所述氣道113用以向反應腔210內輸送反應氣體。氣體擋板114設置在上電極元件110對應冷卻器件121的一面，用以改善反應腔210內的反應氣體的流暢均勻性。 The upper electrode element 110 includes a gas shower head 112, a plurality of air channels 113, and a gas baffle 114. The gas shower head 112 is disposed on the upper electrode element 110 for spraying reaction gas into the reaction chamber 210 . The upper electrode element 110 also includes a plurality of air passages 113 that connect an external gas supply device to the gas shower head 112 . The air channel 113 is used to transport reaction gas into the reaction chamber 210 . The gas baffle 114 is disposed on a side of the upper electrode element 110 corresponding to the cooling device 121 to improve the flow and uniformity of the reaction gas in the reaction chamber 210 .
冷卻器件121設置於上電極元件110上。第一驅動裝置122與冷卻器件121連接，用於驅動冷卻器件121離開或接觸上電極元件110。第一驅動裝置122可為氣缸，以氣動方式控制冷卻器件121離開或接觸上電極元件110；冷卻器件121進一步地以第一連桿123連結第一驅動裝置122。 The cooling device 121 is provided on the upper electrode element 110 . The first driving device 122 is connected to the cooling device 121 and is used to drive the cooling device 121 away from or in contact with the upper electrode element 110 . The first driving device 122 can be a cylinder that pneumatically controls the cooling device 121 to leave or contact the upper electrode element 110 ; the cooling device 121 is further connected to the first driving device 122 with a first connecting rod 123 .
加熱器件131設置於上電極元件110上，用於對上電極元件110進行加熱。 The heating device 131 is disposed on the upper electrode element 110 for heating the upper electrode element 110 .
進一步地，上電極元件110朝向所述冷卻器件121和加熱器件131的表面設置導熱片111。導熱片111將與冷卻器件121或加熱器件131 是狀態選擇性地接觸。其中，導熱片111具有一定強度、較高的導熱率及有一定的可壓縮性，例如：柔性石墨片。導熱片111可用以加快傳導加熱器件131所產生的熱，以及加快散去上電極元件110所產生的熱。 Further, a thermal conductive sheet 111 is provided on the surface of the upper electrode element 110 toward the cooling device 121 and the heating device 131 . The thermal conductive sheet 111 will be connected with the cooling device 121 or the heating device 131 Is state selective exposure. Among them, the thermal conductive sheet 111 has a certain strength, high thermal conductivity and certain compressibility, such as a flexible graphite sheet. The thermally conductive sheet 111 can be used to speed up the conduction of the heat generated by the heating device 131 and speed up the dissipation of the heat generated by the upper electrode element 110 .
冷卻器件121內設置有流體通道1211，所述流體通道1211內容納流體，利用流體對所述上電極元件110進行冷卻，所述流體可為氣體或液體。 A fluid channel 1211 is provided in the cooling device 121. The fluid channel 1211 contains a fluid, and the upper electrode element 110 is cooled by the fluid. The fluid may be a gas or a liquid.
在本實施例中，第二驅動裝置132與所述加熱器件131連接，用於驅動所述加熱器件131離開或接觸所述上電極元件110。所述第二驅動裝置132可為氣缸，用以氣動方式控制加熱器件131離開或接觸上電極元件110。加熱器件131進一步地以第二連桿133連結第二驅動裝置132。加熱器件131可包括加熱板及加熱管。 In this embodiment, the second driving device 132 is connected to the heating device 131 for driving the heating device 131 to leave or contact the upper electrode element 110 . The second driving device 132 may be a cylinder for pneumatically controlling the heating device 131 to leave or contact the upper electrode element 110 . The heating device 131 is further connected to the second driving device 132 through a second connecting rod 133 . The heating device 131 may include a heating plate and a heating tube.
在本實施例中，加熱器件131設置於所述上電極元件110上，通過控制加熱器件131是否通電對所述上電極元件110進行加熱或不加熱。 In this embodiment, the heating device 131 is disposed on the upper electrode element 110, and the upper electrode element 110 is heated or not heated by controlling whether the heating device 131 is energized.
此外，反應腔210與所述上電極元件110之間設置接地襯墊213，接地襯墊213可以保證上電極元件110的電路通路。 In addition, a ground pad 213 is provided between the reaction chamber 210 and the upper electrode element 110 . The ground pad 213 can ensure the circuit path of the upper electrode element 110 .
其中，接地襯墊213為鋁材質。但是，其僅為舉例，並不以此為限。 Among them, the ground pad 213 is made of aluminum. However, this is only an example and not a limitation.
另一方面，反應腔210與所述上電極元件110之間設置隔熱襯墊214，隔熱襯墊214可以減少上電極元件110的零部件和機台其他零件進行熱交換。 On the other hand, a thermal insulation liner 214 is provided between the reaction chamber 210 and the upper electrode element 110. The thermal insulation liner 214 can reduce heat exchange between the parts of the upper electrode element 110 and other parts of the machine.
其中，隔熱襯墊214所包含的材料有塑膠，例如聚四氟乙烯。但是，其僅為舉例，並不以此為限。 The thermal insulation pad 214 is made of plastic, such as polytetrafluoroethylene. However, this is only an example and not a limitation.
圖3是本發明的等離子體蝕刻裝置的工作流程圖。請參閱圖3， Figure 3 is a working flow chart of the plasma etching device of the present invention. Please refer to Figure 3,
步驟S31：提供等離子體蝕刻裝置。 Step S31: Provide a plasma etching device.
步驟S32：當等離子體蝕刻裝置內進行等離子體蝕刻製程時，通過第一驅動裝置驅動冷卻器件與上電極元件接觸，用於對上電極元件進行降溫，加熱器件不對上電極元件加熱。 Step S32: When the plasma etching process is performed in the plasma etching device, the first driving device drives the cooling device to contact the upper electrode element for cooling the upper electrode element, and the heating device does not heat the upper electrode element.
步驟S33：當等離子體蝕刻裝置內不進行等離子體蝕刻製程時，通過第一驅動裝置驅動冷卻器件離開上電極元件，不對上電極元件進行降溫，加熱器件對上電極元件進行加熱。 Step S33: When the plasma etching process is not performed in the plasma etching device, the first driving device drives the cooling device away from the upper electrode element without cooling the upper electrode element, and the heating device heats the upper electrode element.
在一實施例中，所述加熱器件131連接第二驅動裝置132，從而等離子體蝕刻裝置的工作方法還包括下列步驟：當等離子體蝕刻裝置100內進行等離子體蝕刻製程時，通過第一驅動裝置122驅動冷卻器件121與上電極元件110接觸，用於對上電極元件110進行降溫，通過第二驅動裝置132驅動加熱器件131離開上電極元件110，不對上電極元件110加熱；當等離子體蝕刻裝置100內不進行等離子體蝕刻製程時，通過第一驅動裝置122驅動冷卻器件121離開上電極元件110，不對上電極元件110進行降溫，通過第二驅動裝置132驅動加熱器件131與上電極元件110接觸，用於對上電極元件110進行加熱。 In one embodiment, the heating device 131 is connected to the second driving device 132, so that the working method of the plasma etching device further includes the following steps: when the plasma etching process is performed in the plasma etching device 100, through the first driving device 122 drives the cooling device 121 to contact the upper electrode element 110 for cooling the upper electrode element 110, and drives the heating device 131 away from the upper electrode element 110 through the second driving device 132 without heating the upper electrode element 110; when the plasma etching device When the plasma etching process is not performed in 100, the cooling device 121 is driven by the first driving device 122 to leave the upper electrode element 110 without cooling the upper electrode element 110, and the heating device 131 is driven by the second driving device 132 to contact the upper electrode element 110. , used to heat the upper electrode element 110 .
在另一實施例中，等離子體蝕刻裝置200的工作方法還包括下列步驟：當等離子體蝕刻裝置200內進行等離子體蝕刻製程時，通過第一驅動裝置122驅動冷卻器件121與上電極元件110接觸，用於對上電極元件110進行降溫，通過加熱器件131對加熱器件斷電，不對上電極元件110加熱；當等離子體蝕刻裝置200內不進行等離子體蝕刻製程時，通過第一驅動裝置122驅動冷卻器件121離開上電極元件110，不對上電極元件110進行降溫，通過對加熱器件131通電，實現對上電極元件110進行加熱。 In another embodiment, the working method of the plasma etching device 200 further includes the following steps: when the plasma etching process is performed in the plasma etching device 200 , the cooling device 121 is driven by the first driving device 122 to contact the upper electrode element 110 , used to cool down the upper electrode element 110, power off the heating device through the heating device 131, and not heat the upper electrode element 110; when the plasma etching process is not performed in the plasma etching device 200, it is driven by the first driving device 122 The cooling device 121 is away from the upper electrode element 110 and does not cool the upper electrode element 110. By energizing the heating device 131, the upper electrode element 110 is heated.
當進行等離子體蝕刻製程時，第一驅動裝置122控制冷卻器件121接觸上電極元件110，冷卻器件121可以帶走多餘的熱量就能使得反應腔保持恆定高溫狀態；當等離子體蝕刻裝置200在空閒狀態時，第一驅動裝置122控制冷卻器件121離開上電極元件110，使得冷卻器件121不對上電極元件110造成影響，加熱器件131只需要較小的加熱功率就能使得反應腔保持恆定高溫狀態，無須額外增大加熱器件131，且達到延長加熱器件131使用壽命與節約電能的功效。 When the plasma etching process is performed, the first driving device 122 controls the cooling device 121 to contact the upper electrode element 110. The cooling device 121 can take away excess heat to maintain a constant high temperature state in the reaction chamber; when the plasma etching device 200 is idle state, the first driving device 122 controls the cooling device 121 to leave the upper electrode element 110 so that the cooling device 121 does not affect the upper electrode element 110. The heating device 131 only requires a small heating power to maintain the reaction chamber in a constant high temperature state. There is no need to increase the size of the heating device 131 additionally, and the effects of extending the service life of the heating device 131 and saving electric energy are achieved.
圖4是圖1的等離子體蝕刻裝置100在製程過程中的結構示意圖。請參閱圖4，當等離子體蝕刻裝置100在進行等離子體蝕刻製程時，第一驅動裝置122控制冷卻器件121接觸上電極元件110，加熱器件131不對上電極元件110加熱，冷卻器件121可以帶走多餘的熱量就能使得反應腔保持恆定高溫狀態。 FIG. 4 is a schematic structural diagram of the plasma etching apparatus 100 of FIG. 1 during the process. Please refer to Figure 4. When the plasma etching device 100 is performing a plasma etching process, the first driving device 122 controls the cooling device 121 to contact the upper electrode element 110. The heating device 131 does not heat the upper electrode element 110, and the cooling device 121 can be taken away. Excess heat can keep the reaction chamber at a constant high temperature.
圖5是圖1等離子體蝕刻裝置在空閒狀態下的結構示意圖；請參閱圖5，當等離子體蝕刻裝置在空閒狀態時，第一驅動裝置122控制冷卻器件121離開上電極元件110，冷卻器件121不對上電極元件110冷卻，加熱器件131只需要較小的加熱功率就能使得反應腔保持恆定高溫狀態。 FIG. 5 is a schematic structural diagram of the plasma etching device in FIG. 1 in an idle state; please refer to FIG. 5 . When the plasma etching device is in an idle state, the first driving device 122 controls the cooling device 121 to leave the upper electrode element 110 , and the cooling device 121 Without cooling the upper electrode element 110, the heating device 131 only requires a small heating power to maintain a constant high temperature state in the reaction chamber.
此外，當等離子體蝕刻裝置在蝕刻狀態，但射頻功率較低時，且所述射頻功率難以使反應腔內達到所需的溫度，需要所述加熱器件對上電極加熱以達到所需溫度；當反應腔內部進行蝕刻製程時，更加需要所述加熱器件對上電極加熱以達到所需溫度。由此可見，當所述射頻功率較低時，無論反應腔內進行蝕刻製程還是停止蝕刻製程，所述加熱器件都要對上電極進行加熱，同時所述冷卻器件無需對上電極進行降溫。 In addition, when the plasma etching device is in the etching state, but the radio frequency power is low, and the radio frequency power is difficult to reach the required temperature in the reaction chamber, the heating device needs to heat the upper electrode to reach the required temperature; when When the etching process is performed inside the reaction chamber, it is more necessary for the heating device to heat the upper electrode to reach the required temperature. It can be seen that when the radio frequency power is low, no matter whether the etching process is performed or stopped in the reaction chamber, the heating device must heat the upper electrode, and the cooling device does not need to cool the upper electrode.
儘管本發明的內容已經通過上述較佳實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在所屬技術領域中具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。 Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those of ordinary skill in the art upon reading the foregoing description. Therefore, the protection scope of the present invention should be limited by the appended patent application scope.
100:等離子體蝕刻裝置 100:Plasma etching device
110:上電極元件 110: Upper electrode component
111:導熱片 111:Thermal conductor
112:氣體噴淋頭 112:Gas sprinkler head
113:氣道 113:Airway
114:氣體檔板 114:Gas baffle
121:冷卻器件 121: Cooling device
1211:流體通道 1211: Fluid channel
122:第一驅動裝置 122: First drive device
123:第一連桿 123:First connecting rod
131:加熱器件 131: Heating device
132:第二驅動裝置 132: Second drive device
133:第二連桿 133:Second connecting rod
210:反應腔 210:Reaction chamber
213:接地襯墊 213:Ground pad
214:隔熱襯墊 214:Thermal insulation pad
300:基座 300: base
400:待處理基片 400:Substrate to be processed
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| JP5762798B2 (en) * | 2011-03-31 | 2015-08-12 | 東京エレクトロン株式会社 | Ceiling electrode plate and substrate processing placement |
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| US20050103275A1 (en) * | 2003-02-07 | 2005-05-19 | Tokyo Electron Limited | Plasma processing apparatus, ring member and plasma processing method |
| US20120273135A1 (en) * | 2008-03-05 | 2012-11-01 | Tokyo Electron Limited | Electrode unit, substrate processing apparatus, and temperature control method for electrode unit |
| KR101320064B1 (en) * | 2012-06-29 | 2013-10-18 | 주식회사 휴템 | Wafer bonder using dual-cooling and wafer bonding method |
| TW201715239A (en) * | 2015-10-16 | 2017-05-01 | Hon Tech Inc | Temperature control device of connector of test equipment and temperature control method thereof comprising a joint block contacting on an electronic component to be tested, a thermoelectric cooling chip mounted on a heating plate of the joint block, and a heat dissipater mounted on the thermoelectric cooling chip |
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