TWI820940B - Spraying and cleaning system, substrate processing device and cleaning method of nozzle thereof - Google Patents

Spraying and cleaning system, substrate processing device and cleaning method of nozzle thereof Download PDF

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TWI820940B
TWI820940B TW111137113A TW111137113A TWI820940B TW I820940 B TWI820940 B TW I820940B TW 111137113 A TW111137113 A TW 111137113A TW 111137113 A TW111137113 A TW 111137113A TW I820940 B TWI820940 B TW I820940B
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nozzle
cleaning
spraying
substrate
substrate processing
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TW111137113A
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TW202412945A (en
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黃立佐
張修凱
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弘塑科技股份有限公司
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Abstract

The present application provides a spraying and cleaning system, including: an integrated spray head, a first supply system, and a second supply system. The integrated spray head includes a first nozzle, a second nozzle, and a sleeve. The sleeve is circumferentially disposed outside the first nozzle and the second nozzle, and the second nozzle communicates with a space between the sleeve and the first nozzle. The first supply system is connected to the first nozzle and is configured to supply process liquid. The second supply system is connected to the second nozzle and is configured to provide a substance to clean residues remaining on the first nozzle.

Description

噴灑與清洗系統、基板處理裝置及其噴嘴的清洗方法Spraying and cleaning systems, substrate processing devices and cleaning methods for their nozzles

本揭示是涉及一種半導體領域,特別是關於一種噴灑與清洗系統、基板處理裝置和基板處理裝置之噴嘴的清洗方法。 The present disclosure relates to the field of semiconductors, and in particular to a spraying and cleaning system, a substrate processing device and a cleaning method for a nozzle of the substrate processing device.

半導體基板可藉由單晶圓旋轉機台進行濕式蝕刻或清洗。然而,在噴灑完化學液體之後,化學液體容易殘留在噴嘴,使得後續進行基板的清洗時,殘留的該化學液體會污染清洗液,進而影響產品的品質。 Semiconductor substrates can be wet etched or cleaned using a single wafer rotating machine. However, after the chemical liquid is sprayed, the chemical liquid easily remains in the nozzle, so that when the substrate is subsequently cleaned, the remaining chemical liquid will contaminate the cleaning solution, thereby affecting the quality of the product.

有鑑於此,有必要提供一種基板處理裝置和清洗方法,以解決上述技術問題。 In view of this, it is necessary to provide a substrate processing device and cleaning method to solve the above technical problems.

為解決上述習知技術之問題,本申請之目的在於提供一種噴灑與清洗系統、基板處理裝置和基板處理裝置之噴嘴的清洗方法,其將主要的噴嘴清洗部件與噴嘴整合在一起,避免噴嘴清洗部件與噴嘴分離設置而導致請洗時對位誤差,進而確保噴嘴可被確實地清潔。 In order to solve the problems of the above-mentioned conventional technologies, the purpose of this application is to provide a spraying and cleaning system, a substrate processing device and a cleaning method of a nozzle of the substrate processing device, which integrates the main nozzle cleaning components and the nozzle to avoid nozzle cleaning. The components and the nozzle are separated, resulting in misalignment during cleaning, thereby ensuring that the nozzle can be reliably cleaned.

為達成上述目的,本申請提供一種噴灑與清洗系統,包括:整合噴頭、第一供應系統和第二供應系統。該整合噴頭包括第一噴嘴、第二噴嘴和套管,其中該套管環繞地設置在該第一噴嘴和該第二噴嘴之外,以及該第二噴嘴連 通該套管和該第一噴嘴之間的空間。該第一供應系統連接至該第一噴嘴,配置為提供製程液體。該第二供應系統連接至該第二噴嘴,配置為提供物質以清潔殘留在該第一噴嘴上的殘留物。 In order to achieve the above object, the present application provides a spraying and cleaning system, including: an integrated sprinkler head, a first supply system and a second supply system. The integrated nozzle includes a first nozzle, a second nozzle and a sleeve, wherein the sleeve is circumferentially arranged outside the first nozzle and the second nozzle, and the second nozzle is connected to Pass the space between the sleeve and the first nozzle. The first supply system is connected to the first nozzle and configured to provide process liquid. The second supply system is connected to the second nozzle and configured to provide a substance to clean residue remaining on the first nozzle.

在一些實施例中,該第二供應系統包括負壓供應裝置,配置為提供負壓以抽取出殘留在該第一噴嘴上的該殘留物。 In some embodiments, the second supply system includes a negative pressure supply device configured to provide negative pressure to extract the residue remaining on the first nozzle.

在一些實施例中,該第二供應系統包括清洗液體供應裝置,配置為提供清洗液體以沖洗並去除殘留在該第一噴嘴上的該殘留物。 In some embodiments, the second supply system includes a cleaning liquid supply configured to provide cleaning liquid to flush and remove the residue remaining on the first nozzle.

在一些實施例中,該第二供應系統包括氣體供應裝置,配置為提供乾燥氣體以去除殘留在該第一噴嘴上的該殘留物及吹乾該第一噴嘴。 In some embodiments, the second supply system includes a gas supply device configured to provide drying gas to remove the residue remaining on the first nozzle and to dry the first nozzle.

在一些實施例中,在垂直方向上,該套管的長度大於該第一噴嘴的長度。 In some embodiments, the length of the sleeve is greater than the length of the first nozzle in the vertical direction.

在一些實施例中,該第二噴嘴設置有複數個噴出口,並且該複數個噴出口環形地設置在該套管和該第一噴嘴之間的該空間中。 In some embodiments, the second nozzle is provided with a plurality of spout openings, and the plurality of spout openings are annularly disposed in the space between the sleeve and the first nozzle.

本申請還提供一種基板處理裝置,包括:基板保持部、如上所述的噴灑與清洗系統和移動裝置。該基板保持部用於保持基板。該移動裝置與該噴灑與清洗系統連接,用於控制該噴灑與清洗系統之整合噴頭在待機位置與該基板保持部之上方的位置之間移動。 This application also provides a substrate processing device, including: a substrate holding part, a spraying and cleaning system as described above, and a moving device. The substrate holding portion holds the substrate. The moving device is connected to the spraying and cleaning system and is used to control the integrated nozzle of the spraying and cleaning system to move between a standby position and a position above the substrate holding part.

本申請還提供一種基板處理裝置之噴嘴的清洗方法,包括:提供基板處理裝置,該基板處理裝置包含基板保持部和如上所述的噴灑與清洗系統;在該基板保持部上放置基板;控制該噴灑與清洗系統之第一噴嘴在該基板上方沿一路徑噴灑製程液體;停止噴灑該製程液體;以及控制該噴灑與清洗系統之第二供應系統提供物質以清潔殘留在該第一噴嘴上的殘留物。 The application also provides a method for cleaning a nozzle of a substrate processing device, which includes: providing a substrate processing device, which includes a substrate holding part and a spraying and cleaning system as described above; placing a substrate on the substrate holding part; controlling the The first nozzle of the spraying and cleaning system sprays the process liquid along a path above the substrate; stops spraying the process liquid; and controls the second supply system of the spraying and cleaning system to provide substances to clean the residue remaining on the first nozzle things.

在一些實施例中,該第二供應系統包括負壓供應裝置,以及控制該供應系統提供該物質包括:藉由該負壓供應裝置提供負壓以抽取出殘留在該第一噴嘴上的該殘留物。 In some embodiments, the second supply system includes a negative pressure supply device, and controlling the supply system to provide the substance includes: providing negative pressure through the negative pressure supply device to extract the residue remaining on the first nozzle. things.

在一些實施例中,該基板處理裝置還包含移動裝置,該移動裝置配置為控制該噴灑與清洗系統之整合噴頭在待機位置與該基板保持部之上方的位置之間移動。在噴灑該製程液體之前,該清洗方法還包括:藉由該移動裝置控制該噴灑與清洗系統之該整合噴頭從該待機位置移動至該基板保持部之上。在停止噴灑該製程液體之後啟動該負壓供應裝置,接著再藉由該移動裝置控制該噴灑與清洗系統之該整合噴頭移動至該待機位置。 In some embodiments, the substrate processing apparatus further includes a moving device configured to control the integrated nozzle of the spraying and cleaning system to move between a standby position and a position above the substrate holding portion. Before spraying the process liquid, the cleaning method further includes: controlling the integrated nozzle of the spraying and cleaning system to move from the standby position to the substrate holding part through the moving device. After stopping spraying the process liquid, the negative pressure supply device is started, and then the integrated nozzle of the spraying and cleaning system is controlled by the moving device to move to the standby position.

在一些實施例中,該第二供應系統包括清洗液體供應裝置,以及控制該供應系統提供該物質包括:藉由該清洗液體供應裝置提供清洗液體以沖洗並去除殘留在該第一噴嘴上的該殘留物。 In some embodiments, the second supply system includes a cleaning liquid supply device, and controlling the supply system to provide the substance includes: providing cleaning liquid through the cleaning liquid supply device to rinse and remove the residue remaining on the first nozzle. residue.

在一些實施例中,該第二供應系統包括氣體供應裝置,以及控制該供應系統提供該物質包括:藉由該氣體供應裝置提供乾燥氣體以去除殘留在該第一噴嘴上的該殘留物及吹乾該第一噴嘴。 In some embodiments, the second supply system includes a gas supply device, and controlling the supply system to provide the substance includes: providing dry gas through the gas supply device to remove the residue remaining on the first nozzle and blowing Dry the first nozzle.

相較於先前技術,本申請提供了一種噴灑與清洗系統、基板處理裝置和基板處理裝置之噴嘴的清洗方法,其可將殘留在噴嘴上的殘留物清除,以避免基板汙染或過度蝕刻等。此外,藉由將提供製程液體的第一噴嘴與提供清洗物質的第二噴嘴整合在一起,使得兩者之間的距離保持固定。因此,當藉由第二噴嘴執行第一噴嘴的清潔操作時,確保了第一噴嘴能被第二噴嘴所對準並清洗乾淨,不會因為兩者之間對位偏移而導致清潔效果下降。 Compared with the prior art, this application provides a spraying and cleaning system, a substrate processing device and a cleaning method for a nozzle of the substrate processing device, which can remove residues remaining on the nozzle to avoid substrate contamination or excessive etching. In addition, by integrating the first nozzle for providing the process liquid and the second nozzle for providing the cleaning substance, the distance between the two is kept constant. Therefore, when the second nozzle is used to perform the cleaning operation of the first nozzle, it is ensured that the first nozzle can be aligned and cleaned by the second nozzle, and the cleaning effect will not be reduced due to misalignment between the two. .

10:基板處理裝置 10:Substrate processing device

11:基板保持部 11:Substrate holding part

12:整合噴頭 12: Integrated nozzle

121、221:第一噴嘴 121, 221: first nozzle

122、222:套管 122, 222: Casing

123、223:第二噴嘴 123, 223: Second nozzle

13:第一供應系統 13:First supply system

14:第二供應系統 14:Second supply system

141:負壓供應裝置 141: Negative pressure supply device

142:清洗液體供應裝置 142: Cleaning liquid supply device

143:氣體供應裝置 143:Gas supply device

15、25:第一管路 15, 25: First pipeline

16、26:第二管路 16, 26: Second pipeline

17:移動裝置 17:Mobile device

171:旋轉升降柱 171: Rotating lifting column

172:長臂 172:Long arm

18:定位件 18: Positioning parts

2:基板 2:Substrate

P1:待機位置 P1: Standby position

A、B:點 A, B: points

O:中心點 O: center point

R:路徑 R: path

V1:第一閥門 V1: first valve

V2:第二閥門 V2: Second valve

V3:第三閥門 V3: The third valve

V4:第四閥門 V4: The fourth valve

圖1顯示本申請之第一實施例之基板處理裝置之示意圖;圖2顯示圖1之基板處理裝置之局部俯視圖;圖3顯示圖1之基板處理裝置之噴灑與清洗系統之整合噴頭之示意圖;圖4顯示本申請之實施例之基板處理裝置之第一操作示意圖;圖5顯示本申請之實施例之基板處理裝置之第二操作示意圖;圖6顯示本申請之實施例之基板處理裝置之第三操作示意圖;圖7顯示本申請之實施例之基板處理裝置之第四操作示意圖;圖8顯示本申請之第二實施例之噴灑與清洗系統之整合噴頭之示意圖。 Figure 1 shows a schematic diagram of the substrate processing device according to the first embodiment of the present application; Figure 2 shows a partial top view of the substrate processing device of Figure 1; Figure 3 shows a schematic diagram of the integrated nozzle of the spraying and cleaning system of the substrate processing device of Figure 1; FIG. 4 shows a first operational schematic diagram of the substrate processing apparatus according to the embodiment of the present application; FIG. 5 shows a second operational schematic diagram of the substrate processing apparatus according to the embodiment of the present application; FIG. 6 shows the third operational schematic diagram of the substrate processing apparatus according to the embodiment of the present application. Three operational schematic diagrams; Figure 7 shows a fourth operational schematic diagram of the substrate processing device according to the embodiment of the present application; Figure 8 shows a schematic diagram of the integrated nozzle of the spraying and cleaning system according to the second embodiment of the present application.

為了讓本申請之上述及其他目的、特徵、優點能更明顯易懂,下文將特舉本申請較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the above and other objects, features, and advantages of the present application more obvious and understandable, preferred embodiments of the present application will be cited in the following and described in detail with reference to the attached drawings.

請參照圖1和圖2,圖1顯示本申請之第一實施例之基板處理裝置之示意圖,以及圖2顯示圖1之基板處理裝置之局部俯視圖。基板處理裝置10是用於對基板進行各種處理,例如進行濕式蝕刻或者是去除基板表面的顆粒等。基板處理裝置10包括基板保持部11、整合噴頭12、第一供應系統13、第二供應系統14、第一管路15、第二管路16和移動裝置17。在本實施例中,整合噴頭12、第一供應系統13、第二供應系統14、第一管路15和第二管路16共同構成本申請之噴灑與清洗系統。應當理解的是,在圖2中,基板處理裝置10包含3個噴灑與清洗系統,然而,在其他實施例中可包含其他數量的噴灑與清洗系統,不侷限於此。 Please refer to FIGS. 1 and 2 . FIG. 1 shows a schematic diagram of a substrate processing device according to a first embodiment of the present application, and FIG. 2 shows a partial top view of the substrate processing device of FIG. 1 . The substrate processing device 10 is used to perform various processes on the substrate, such as wet etching or removing particles on the surface of the substrate. The substrate processing apparatus 10 includes a substrate holding part 11 , an integrated nozzle 12 , a first supply system 13 , a second supply system 14 , a first pipeline 15 , a second pipeline 16 and a moving device 17 . In this embodiment, the integrated nozzle 12, the first supply system 13, the second supply system 14, the first pipeline 15 and the second pipeline 16 together constitute the spraying and cleaning system of the present application. It should be understood that in FIG. 2 , the substrate processing apparatus 10 includes three spraying and cleaning systems. However, other numbers of spraying and cleaning systems may be included in other embodiments, and the invention is not limited thereto.

如圖1所示,基板保持部11包含用於保持基板2的旋轉盤。可選地,可藉由真空吸附的方式將基板吸附在旋轉盤,或者是藉由夾持機構將基板夾持固定在旋轉盤上,不局限於此。 As shown in FIG. 1 , the substrate holding unit 11 includes a rotating disk for holding the substrate 2 . Alternatively, the substrate can be adsorbed on the rotating disk by vacuum adsorption, or the substrate can be clamped and fixed on the rotating disk by a clamping mechanism, which is not limited thereto.

請參照圖3,其顯示圖1之基板處理裝置之噴灑與清洗系統之整合噴頭之示意圖。整合噴頭12包括第一噴嘴121、套管122和第二噴嘴123。套管122套設在第一噴嘴121和第二噴嘴123之外。具體來說,第一噴嘴121和第二噴嘴123朝垂直方向延伸。套管122包含朝垂直方向延伸的環形壁以及位於環形壁相對兩側的第一端和第二端。套管122的第一端設置有頂壁,並且頂壁開設有兩個小開口。套管122的第二端為不具有物理遮蔽物的開口通道。套管122的環形壁環繞地設置在第一噴嘴121和第二噴嘴123之外。第一噴嘴121和第二噴嘴123分別藉由套管122的第一端的兩個小開口延伸至套管122的內部。第一噴嘴121和第二噴嘴123噴灑出的氣體或液體從套管122的第二端排出。第一噴嘴121設置在靠近套管122內的中心軸位置,以及第二噴嘴123設置在第一噴嘴121與套管122的環形壁之間。也就是說,第二噴嘴123連通套管122和第一噴嘴121之間的空間。應當注意的是,在垂直方向上,套管122的長度大於第一噴嘴121的長度,因此套管122的第二端的開口口徑可限制第一噴嘴121噴灑的範圍,避免噴灑出的製程液體在基板2上過度飛濺。再者,在套管122的內部,與第一噴嘴121的噴出口的位置相比,第二噴嘴123的噴出口相對靠近套管122的第一端。同樣地,與第二噴嘴123的噴出口的位置相比,第一噴嘴121的噴出口相對靠近套管122的第二端。因此,第二噴嘴123噴灑出的氣體或液體會到達第一噴嘴121的外側壁和末端。 Please refer to FIG. 3 , which shows a schematic diagram of an integrated nozzle of the spraying and cleaning system of the substrate processing device of FIG. 1 . The integrated nozzle 12 includes a first nozzle 121 , a sleeve 122 and a second nozzle 123 . The sleeve 122 is set outside the first nozzle 121 and the second nozzle 123 . Specifically, the first nozzle 121 and the second nozzle 123 extend in the vertical direction. The sleeve 122 includes an annular wall extending in a vertical direction and first and second ends located on opposite sides of the annular wall. The first end of the sleeve 122 is provided with a top wall, and the top wall is provided with two small openings. The second end of sleeve 122 is an open channel without physical shielding. The annular wall of the sleeve 122 is arranged circumferentially outside the first nozzle 121 and the second nozzle 123 . The first nozzle 121 and the second nozzle 123 respectively extend to the interior of the sleeve 122 through two small openings at the first end of the sleeve 122 . The gas or liquid sprayed by the first nozzle 121 and the second nozzle 123 is discharged from the second end of the sleeve 122 . The first nozzle 121 is disposed close to the central axis in the casing 122 , and the second nozzle 123 is disposed between the first nozzle 121 and the annular wall of the casing 122 . That is, the second nozzle 123 communicates with the space between the sleeve 122 and the first nozzle 121 . It should be noted that in the vertical direction, the length of the sleeve 122 is greater than the length of the first nozzle 121 , so the opening caliber of the second end of the sleeve 122 can limit the spray range of the first nozzle 121 to avoid the sprayed process liquid in the Excessive spatter on substrate 2. Furthermore, within the sleeve 122 , compared with the position of the discharge outlet of the first nozzle 121 , the discharge outlet of the second nozzle 123 is relatively close to the first end of the sleeve 122 . Similarly, compared with the position of the spray outlet of the second nozzle 123 , the spray outlet of the first nozzle 121 is relatively close to the second end of the sleeve 122 . Therefore, the gas or liquid sprayed by the second nozzle 123 will reach the outer wall and end of the first nozzle 121 .

如圖1和圖3所示,第一供應系統13藉由第一管路15連接至第一噴嘴121,以及第二供應系統14藉由第二管路16連接至第二噴嘴123。第一供應系統 13配置為提供製程液體,如蝕刻液等。第二供應系統14配置為提供一物質以清潔殘留在第一噴嘴121上的殘留物。如圖1所示,第二供應系統14包括負壓供應裝置141、清洗液體供應裝置142和氣體供應裝置143。負壓供應裝置141可提供負壓。清洗液體供應裝置142可提供清洗液體,如去離子水。氣體供應裝置143可提供乾燥氣體,如乾淨的乾空氣或氮氣等。 As shown in FIGS. 1 and 3 , the first supply system 13 is connected to the first nozzle 121 through the first pipeline 15 , and the second supply system 14 is connected to the second nozzle 123 through the second pipeline 16 . first supply system 13 is configured to provide process liquid, such as etching liquid, etc. The second supply system 14 is configured to provide a substance to clean residue remaining on the first nozzle 121 . As shown in FIG. 1 , the second supply system 14 includes a negative pressure supply device 141 , a cleaning liquid supply device 142 and a gas supply device 143 . The negative pressure supply device 141 can provide negative pressure. The cleaning liquid supply device 142 may provide cleaning liquid, such as deionized water. The gas supply device 143 can provide dry gas, such as clean dry air or nitrogen.

應當理解的是,第二噴嘴123作為主要施加清潔第一噴嘴121的物質的部件。也就是說,第一噴嘴121與第二噴嘴123兩者的相對距離會直接地影響第一噴嘴121的清洗效果。在本申請中,由於第一噴嘴121與第二噴嘴123整合在一起,使得兩者之間的距離保持固定。因此,當藉由第二噴嘴123執行第一噴嘴121的清潔操作時,確保了第一噴嘴121能被第二噴嘴123所對準並清洗乾淨,不會因為兩者之間對位偏移而導致清潔效果下降。 It should be understood that the second nozzle 123 serves as a component that mainly applies the substance that cleans the first nozzle 121 . That is to say, the relative distance between the first nozzle 121 and the second nozzle 123 will directly affect the cleaning effect of the first nozzle 121 . In this application, since the first nozzle 121 and the second nozzle 123 are integrated together, the distance between them remains fixed. Therefore, when the second nozzle 123 performs the cleaning operation of the first nozzle 121, it is ensured that the first nozzle 121 can be aligned and cleaned by the second nozzle 123, and will not be damaged due to alignment deviation between the two. Resulting in reduced cleaning effect.

如圖1至圖3所示,移動裝置17與噴灑與清洗系統連接,用於控制噴灑與清洗系統之整合噴頭12在一待機位置P1與基板保持部11之上方的位置之間移動。移動裝置17包括旋轉升降柱171和長臂172。圖3所示,整合噴頭12藉由定位件18固定至長臂172的一端,以及長臂172的另一端連接至旋轉升降柱171。如圖2所示,旋轉升降柱171設置在基板保持部11的周圍外側,與基板保持部11相距一距離。當旋轉升降柱171轉動時,長臂172能帶動整合噴頭12一起移動。舉例來說,移動裝置17能控制整合噴頭12從待機位置P1移動至基板保持部11之上,始得第一噴嘴121在基板2上方沿一路徑R噴灑對應的製程液體。路徑R包含從基板2的邊緣上的一點A朝基板2的中心點O移動,並且接著從基板2的中心點O朝基板2的邊緣上的另一點B移動。在一些實施例中,旋轉升降柱171分別與旋轉驅動部以及升降驅動部連接,其中旋轉驅動部和升降驅動部可採用將旋轉升降柱171分 別與兩個不同的驅動裝置(例如馬達)連接來實施,或者是將旋轉驅動部和升降驅動部整合在同一驅動裝置上,並進一步與旋轉升降柱171連接來實施。藉由旋轉驅動部的驅動可驅使旋轉升降柱171繞著一轉軸轉動,進而驅使長臂172帶動整合噴頭12在水平面上沿路徑R移動。再者,藉由升降驅動部的驅動可驅使旋轉升降柱171沿著垂直於水平面的方向做垂直升降運動,連帶地改變整合噴頭12的水平高度。 As shown in FIGS. 1 to 3 , the moving device 17 is connected to the spraying and cleaning system, and is used to control the integrated nozzle 12 of the spraying and cleaning system to move between a standby position P1 and a position above the substrate holding portion 11 . The moving device 17 includes a rotating lifting column 171 and a long arm 172 . As shown in FIG. 3 , the integrated nozzle 12 is fixed to one end of the long arm 172 through the positioning member 18 , and the other end of the long arm 172 is connected to the rotating lifting column 171 . As shown in FIG. 2 , the rotating lifting column 171 is provided around the outside of the substrate holding part 11 and is spaced apart from the substrate holding part 11 . When the rotating lifting column 171 rotates, the long arm 172 can drive the integrated nozzle 12 to move together. For example, the moving device 17 can control the integrated nozzle 12 to move from the standby position P1 to the substrate holding part 11 , so that the first nozzle 121 sprays the corresponding process liquid along a path R above the substrate 2 . The path R consists of movement from a point A on the edge of the substrate 2 towards a center point O of the substrate 2 and then from the center point O of the substrate 2 towards another point B on the edge of the substrate 2 . In some embodiments, the rotating lifting column 171 is connected to the rotating driving part and the lifting driving part respectively, wherein the rotating driving part and the lifting driving part may adopt the method of dividing the rotating lifting column 171 into two parts. It can be implemented by connecting with two different driving devices (such as motors), or by integrating the rotating driving part and the lifting driving part on the same driving device and further connecting with the rotating lifting column 171 . The rotating lifting column 171 can be driven to rotate around a rotating axis by driving the rotating driving part, thereby driving the long arm 172 to drive the integrated nozzle 12 to move along the path R on the horizontal plane. Furthermore, by driving the lifting driving part, the rotating lifting column 171 can be driven to perform a vertical lifting movement in a direction perpendicular to the horizontal plane, thereby changing the horizontal height of the integrated nozzle 12 .

本申請還提供一種基板處理裝置之噴嘴的清洗方法,其將主要的噴嘴清洗部件與第一噴嘴121整合在一起,並且藉由第二噴嘴123與第二供應系統14提供對應的物質來實現第一噴嘴121的清潔,具體噴灑與清洗步驟以及各部件的具體配置將詳述於後。 The present application also provides a method for cleaning a nozzle of a substrate processing device, which integrates the main nozzle cleaning component with the first nozzle 121, and uses the second nozzle 123 and the second supply system 14 to provide corresponding substances to realize the second nozzle cleaning method. The cleaning of the nozzle 121, the specific spraying and cleaning steps, and the specific configuration of each component will be described in detail later.

請參照圖1、圖2和圖4,圖4顯示本申請之實施例之基板處理裝置之第一操作示意圖。當基板處理裝置10處理基板時,首先提供如圖1所示之基板處理裝置10。應當理解的是,基板處理裝置10之各部件的具體結構如上所述,在此不加以贅述。接著,在基板保持部11上放置基板2。如圖2所示,當將基板2保持在基板保持部11之後,藉由移動裝置17控制噴灑與清洗系統之整合噴頭12從待機位置P1移動至基板保持部11之上方,並且沿一路徑R進行往復運動。如圖4所示,此時,第一管路15上的第一閥門V1開啟,以及第二管路16上的第二閥門V2、第三閥門V3和第四閥門V4關閉。第一供應系統13通過第一管路15提供製程液體至第一噴嘴121,並且第一噴嘴121將製程液體噴灑至基板2上。此外,由於第二管路16上的閥門關閉,因此第二供應系統14不提供物質至第二噴嘴123。也就是說,在此步驟中,藉由移動裝置17控制第一噴嘴121在基板2上方沿路徑R噴灑製程液體,以對基板2進行各種處理,例如進行濕式蝕刻等。 Please refer to FIGS. 1, 2 and 4. FIG. 4 shows a first operational schematic diagram of the substrate processing apparatus according to the embodiment of the present application. When the substrate processing device 10 processes a substrate, the substrate processing device 10 as shown in FIG. 1 is first provided. It should be understood that the specific structures of each component of the substrate processing apparatus 10 are as described above and will not be described again here. Next, the substrate 2 is placed on the substrate holding portion 11 . As shown in FIG. 2 , after the substrate 2 is held in the substrate holding part 11 , the integrated nozzle 12 of the spraying and cleaning system is controlled by the moving device 17 to move from the standby position P1 to above the substrate holding part 11 along a path R. Perform reciprocating motion. As shown in Figure 4, at this time, the first valve V1 on the first pipeline 15 is opened, and the second valve V2, the third valve V3 and the fourth valve V4 on the second pipeline 16 are closed. The first supply system 13 provides the process liquid to the first nozzle 121 through the first pipeline 15 , and the first nozzle 121 sprays the process liquid onto the substrate 2 . Furthermore, since the valve on the second line 16 is closed, the second supply system 14 does not provide substance to the second nozzle 123 . That is to say, in this step, the first nozzle 121 is controlled by the moving device 17 to spray the process liquid along the path R above the substrate 2 to perform various processes on the substrate 2 , such as wet etching.

請參照圖5,其顯示本申請之實施例之基板處理裝置之第二操作示意圖。當第一噴嘴121噴灑一段時間後,第一管路15上的第一閥門V1關閉並且停止噴灑製程液體。此時,為了避免殘留在第一噴嘴121和套管122內壁的製程液體滴落在基板2上,啟動第二供應系統14的負壓供應裝置141。具體來說,第二管路16上的第二閥門V2開啟,以及第一管路15和第二管路16上的其餘閥門關閉。此時,由於套管122的長度大於第一噴嘴121的長度,藉由負壓供應裝置141提供負壓,進而可利用真空力順利地抽取出殘留在第一噴嘴121和套管122內壁上的殘留物,防止殘留物滴落於基板2表面,以及避免基板2遭受化學藥液污染或過度蝕刻。在此步驟中,殘留物包括製程液體和/或其他可能的汙染物質。 Please refer to FIG. 5 , which shows a second operational schematic diagram of the substrate processing device according to the embodiment of the present application. After the first nozzle 121 sprays for a period of time, the first valve V1 on the first pipeline 15 closes and stops spraying the process liquid. At this time, in order to prevent the process liquid remaining on the inner wall of the first nozzle 121 and the sleeve 122 from dripping on the substrate 2 , the negative pressure supply device 141 of the second supply system 14 is started. Specifically, the second valve V2 on the second pipeline 16 is opened, and the remaining valves on the first pipeline 15 and the second pipeline 16 are closed. At this time, since the length of the casing 122 is greater than the length of the first nozzle 121, the negative pressure supply device 141 provides negative pressure, and the vacuum force can be used to smoothly extract the residue on the inner wall of the first nozzle 121 and the casing 122. residues to prevent the residues from dripping on the surface of the substrate 2 and to prevent the substrate 2 from being contaminated by chemical liquid or over-etched. During this step, residues include process fluids and/or other possible contaminants.

如圖2所示,當第一噴嘴121停止噴灑製程液體之後,移動裝置17控制整合噴頭12移動至待機位置P1。待機位置P1設置有一槽體。應當注意的是,整合噴頭12至待機位置P1的移動與負壓供應裝置141的啟動可同時開始,也可以彼此相隔一段時間依序進行。然而,當兩動作在不同時間點發生時,較佳地先啟動負壓供應裝置141再接著移動整合噴頭12,如此可避免因先移動整合噴頭12而導致殘留的製程液體被甩落。 As shown in FIG. 2 , after the first nozzle 121 stops spraying the process liquid, the moving device 17 controls the integrated nozzle 12 to move to the standby position P1 . The standby position P1 is provided with a tank. It should be noted that the movement of the integrated nozzle 12 to the standby position P1 and the activation of the negative pressure supply device 141 can be started at the same time, or can be performed sequentially after a period of time. However, when the two actions occur at different time points, it is better to start the negative pressure supply device 141 first and then move the integrated nozzle 12. This can avoid the remaining process liquid being thrown off due to moving the integrated nozzle 12 first.

請參照圖6,其顯示本申請之實施例之基板處理裝置之第三操作示意圖。如圖6所示,當控制整合噴頭12定位至待機位置P1後,第一管路15上的第一閥門V1保持關閉,第二管路16上的第三閥門V3開啟,以及第二管路16上的其餘閥門關閉。此時,第二供應系統14的清洗液體供應裝置142開啟。清洗液體供應裝置142通過第二管路16提供清洗液體至第二噴嘴123,並且第二噴嘴123將清洗液體噴灑至第一噴嘴121和套管122內壁上,進而沖洗並去除殘留在第一噴 嘴121和套管122內壁上的殘留物。殘留物例如包括製程液體及其結晶等。可以理解的是,噴灑出的清洗液體和殘留物可藉由位於待機位置P1的槽體收集並排出。 Please refer to FIG. 6 , which shows a third operational schematic diagram of the substrate processing device according to the embodiment of the present application. As shown in Figure 6, when the control integrated nozzle 12 is positioned at the standby position P1, the first valve V1 on the first pipeline 15 remains closed, the third valve V3 on the second pipeline 16 is opened, and the second pipeline The remaining valves on 16 are closed. At this time, the cleaning liquid supply device 142 of the second supply system 14 is turned on. The cleaning liquid supply device 142 provides cleaning liquid to the second nozzle 123 through the second pipeline 16, and the second nozzle 123 sprays the cleaning liquid onto the first nozzle 121 and the inner wall of the sleeve 122, thereby flushing and removing the residue on the first nozzle 122. squirt Residues on the inner walls of mouth 121 and sleeve 122. Residues include, for example, process liquids and crystals thereof. It can be understood that the sprayed cleaning liquid and residue can be collected and discharged through the tank located at the standby position P1.

請參照圖7,其顯示本申請之實施例之基板處理裝置之第四操作示意圖。清洗液體供應裝置142停止輸出清洗液體,並且將第二管路16上的第三閥門V3關閉。接著,第一管路15上的第一閥門V1保持關閉,第二管路16上的第四閥門V4開啟,以及第二管路16上的其餘閥門關閉。此時,第二供應系統14的氣體供應裝置143開啟。氣體供應裝置143通過第二管路16提供乾燥氣體至第二噴嘴123,並且第二噴嘴123將乾燥氣體施加至第一噴嘴121和套管122內壁上,進而去除殘留在第一噴嘴121和套管122內壁上的殘留物及吹乾第一噴嘴121。殘留物例如包括製程液體、清洗液體、異物微粒等。 Please refer to FIG. 7 , which shows a fourth operational schematic diagram of the substrate processing device according to the embodiment of the present application. The cleaning liquid supply device 142 stops outputting cleaning liquid, and closes the third valve V3 on the second pipeline 16 . Then, the first valve V1 on the first line 15 remains closed, the fourth valve V4 on the second line 16 is opened, and the remaining valves on the second line 16 are closed. At this time, the gas supply device 143 of the second supply system 14 is turned on. The gas supply device 143 provides dry gas to the second nozzle 123 through the second pipeline 16, and the second nozzle 123 applies the dry gas to the first nozzle 121 and the inner wall of the sleeve 122, thereby removing the residue on the first nozzle 121 and the inner wall of the sleeve 122. The first nozzle 121 blows away the residue on the inner wall of the casing 122 . Residues include, for example, process liquid, cleaning liquid, foreign particles, etc.

請參照圖8,其顯示本申請之第二實施例之噴灑與清洗系統之整合噴頭之示意圖。本實施例的整合噴頭包括第一噴嘴221、套管222和第二噴嘴223。套管222環繞地設置在第一噴嘴221和第二噴嘴223之外。第一噴嘴221與第一管路25連接,以及第二噴嘴223與第二管路26連接。第二實施例之整合噴頭與第一實施例之整合噴頭大致相同,其區別在於,第二實施例之第二噴嘴223設置有複數個噴出口。該些噴出口環形地設置在套管222和第一噴嘴221之間的空間中。藉由多個噴出口的設計,第二噴嘴223可將物質均勻地施加至套管222和第一噴嘴221之間的空間,以提高清潔殘留物的效率。 Please refer to FIG. 8 , which shows a schematic diagram of an integrated nozzle of a spraying and cleaning system according to a second embodiment of the present application. The integrated nozzle of this embodiment includes a first nozzle 221, a sleeve 222 and a second nozzle 223. The sleeve 222 is arranged circumferentially outside the first nozzle 221 and the second nozzle 223 . The first nozzle 221 is connected to the first pipeline 25 , and the second nozzle 223 is connected to the second pipeline 26 . The integrated nozzle of the second embodiment is substantially the same as the integrated nozzle of the first embodiment. The difference lies in that the second nozzle 223 of the second embodiment is provided with a plurality of ejection ports. The spray outlets are annularly arranged in the space between the sleeve 222 and the first nozzle 221 . Through the design of multiple nozzles, the second nozzle 223 can evenly apply the substance to the space between the sleeve 222 and the first nozzle 221 to improve the efficiency of cleaning residues.

相較於現有技術,本申請提供了一種噴灑與清洗系統、基板處理裝置和基板處理裝置之噴嘴的清洗方法,其可將殘留在噴嘴上的殘留物清除,以避免基板汙染或過度蝕刻等。此外,藉由將提供製程液體的第一噴嘴與提供清洗物質的第二噴嘴整合在一起,使得兩者之間的距離保持固定。因此,當藉由第二 噴嘴執行第一噴嘴的清潔操作時,確保了第一噴嘴能被第二噴嘴所對準並清洗乾淨,不會因為兩者之間對位偏移而導致清潔效果下降。 Compared with the prior art, this application provides a spraying and cleaning system, a substrate processing device and a cleaning method for a nozzle of the substrate processing device, which can remove residues remaining on the nozzle to avoid substrate contamination or excessive etching. In addition, by integrating the first nozzle for providing the process liquid and the second nozzle for providing the cleaning substance, the distance between the two is kept constant. Therefore, when through the second When the nozzle performs the cleaning operation of the first nozzle, it is ensured that the first nozzle can be aligned and cleaned by the second nozzle, and the cleaning effect will not be reduced due to misalignment between the two.

以上僅是本揭示的較佳實施方式,應當指出,對於所屬領域技術人員,在不脫離本揭示原理的前提下,還可以做出若干改進和潤飾,這些改進和潤飾也應視為本揭示的保護範圍。 The above are only preferred embodiments of the present disclosure. It should be noted that those skilled in the art can make several improvements and modifications without departing from the principles of the present disclosure. These improvements and modifications should also be regarded as part of the present disclosure. scope of protection.

10:基板處理裝置 10:Substrate processing device

11:基板保持部 11:Substrate holding part

12:整合噴頭 12: Integrated nozzle

13:第一供應系統 13:First supply system

14:第二供應系統 14:Second supply system

141:負壓供應裝置 141: Negative pressure supply device

142:清洗液體供應裝置 142: Cleaning liquid supply device

143:氣體供應裝置 143:Gas supply device

15:第一管路 15:First pipeline

16:第二管路 16:Second pipeline

17:移動裝置 17:Mobile device

171:旋轉升降柱 171: Rotating lifting column

172:長臂 172:Long arm

2:基板 2:Substrate

Claims (12)

一種噴灑與清洗系統,包括:一整合噴頭,包括一第一噴嘴、一第二噴嘴和一套管,其中該套管環繞地設置在該第一噴嘴和該第二噴嘴之外,以及該第二噴嘴連通該套管和該第一噴嘴之間的空間,且該第二噴嘴對準該第一噴嘴;一第一供應系統,連接至該第一噴嘴,配置為提供一製程液體;以及一第二供應系統,連接至該第二噴嘴,配置為提供一物質以清潔殘留在該第一噴嘴上的一殘留物;其中,該製程液體為蝕刻液。 A spraying and cleaning system includes: an integrated spray head, including a first nozzle, a second nozzle and a sleeve, wherein the sleeve is circumferentially arranged outside the first nozzle and the second nozzle, and the third Two nozzles communicate with the space between the sleeve and the first nozzle, and the second nozzle is aligned with the first nozzle; a first supply system connected to the first nozzle and configured to provide a process liquid; and a first supply system connected to the first nozzle and configured to provide a process liquid; The second supply system is connected to the second nozzle and is configured to provide a substance to clean a residue remaining on the first nozzle; wherein the process liquid is an etching liquid. 如請求項1的噴灑與清洗系統,其中該第二供應系統包括一負壓供應裝置,配置為提供一負壓以抽取出殘留在該第一噴嘴上的該殘留物。 The spraying and cleaning system of claim 1, wherein the second supply system includes a negative pressure supply device configured to provide a negative pressure to extract the residue remaining on the first nozzle. 如請求項1的噴灑與清洗系統,其中該第二供應系統包括一清洗液體供應裝置,配置為提供一清洗液體以沖洗並去除殘留在該第一噴嘴上的該殘留物。 The spraying and cleaning system of claim 1, wherein the second supply system includes a cleaning liquid supply device configured to provide a cleaning liquid to rinse and remove the residue remaining on the first nozzle. 如請求項1的噴灑與清洗系統,其中該第二供應系統包括一氣體供應裝置,配置為提供一乾燥氣體以去除殘留在該第一噴嘴上的該殘留物及吹乾該第一噴嘴。 The spraying and cleaning system of claim 1, wherein the second supply system includes a gas supply device configured to provide a dry gas to remove the residue remaining on the first nozzle and blow dry the first nozzle. 如請求項1的噴灑與清洗系統,其中在一垂直方向上,該套管的長度大於該第一噴嘴的長度。 The spraying and cleaning system of claim 1, wherein the length of the sleeve is greater than the length of the first nozzle in a vertical direction. 如請求項1的噴灑與清洗系統,其中該第二噴嘴設置有複數個噴出口,並且該複數個噴出口環形地設置在該套管和該第一噴嘴之間的該空間中。 The spraying and cleaning system of claim 1, wherein the second nozzle is provided with a plurality of spray outlets, and the plurality of spray outlets are annularly arranged in the space between the sleeve and the first nozzle. 一種基板處理裝置,包括: 一基板保持部,用於保持一基板;如請求項1至6任一項所述的噴灑與清洗系統;以及一移動裝置,與該噴灑與清洗系統連接,用於控制該噴灑與清洗系統之一整合噴頭在一待機位置與該基板保持部之上方的位置之間移動。 A substrate processing device including: A substrate holding part for holding a substrate; the spraying and cleaning system as described in any one of claims 1 to 6; and a moving device connected to the spraying and cleaning system for controlling the spraying and cleaning system An integrated nozzle moves between a standby position and a position above the substrate holding part. 一種基板處理裝置之噴嘴的清洗方法,包括:提供一基板處理裝置,該基板處理裝置包含一基板保持部和如請求項1至6任一項所述的噴灑與清洗系統;在該基板保持部上放置一基板;控制該噴灑與清洗系統之該第一噴嘴在該基板上方沿一路徑噴灑該製程液體;停止噴灑該製程液體;以及控制該噴灑與清洗系統之該第二供應系統提供該物質以清潔殘留在該第一噴嘴上的該殘留物。 A method for cleaning a nozzle of a substrate processing device, including: providing a substrate processing device, the substrate processing device including a substrate holding part and the spraying and cleaning system as described in any one of claims 1 to 6; in the substrate holding part Place a substrate on the substrate; control the first nozzle of the spraying and cleaning system to spray the process liquid along a path above the substrate; stop spraying the process liquid; and control the second supply system of the spraying and cleaning system to provide the substance To clean the residue remaining on the first nozzle. 如請求項8的基板處理裝置之噴嘴的清洗方法,其中該第二供應系統包括一負壓供應裝置,以及控制該供應系統提供該物質包括:藉由該負壓供應裝置提供一負壓以抽取出殘留在該第一噴嘴上的該殘留物。 The cleaning method of a nozzle of a substrate processing device as claimed in claim 8, wherein the second supply system includes a negative pressure supply device, and controlling the supply system to provide the substance includes: providing a negative pressure through the negative pressure supply device to extract Remove the residue remaining on the first nozzle. 如請求項9的基板處理裝置之噴嘴的清洗方法,其中該基板處理裝置還包含一移動裝置,該移動裝置配置為控制該噴灑與清洗系統之一整合噴頭在一待機位置與該基板保持部之上方的位置之間移動;其中在噴灑該製程液體之前,該清洗方法還包括:藉由該移動裝置控制該噴灑與清洗系統之該整合噴頭從該待機位置移動至該基板保持部之上;以及 其中在停止噴灑該製程液體之後啟動該負壓供應裝置,接著再藉由該移動裝置控制該噴灑與清洗系統之該整合噴頭移動至該待機位置。 The cleaning method of a nozzle of a substrate processing device as claimed in claim 9, wherein the substrate processing device further includes a moving device configured to control an integrated nozzle of the spraying and cleaning system between a standby position and the substrate holding part. Move between upper positions; wherein before spraying the process liquid, the cleaning method further includes: controlling the integrated nozzle of the spraying and cleaning system through the moving device to move from the standby position to above the substrate holding part; and The negative pressure supply device is started after the spraying of the process liquid is stopped, and then the integrated nozzle of the spraying and cleaning system is controlled by the moving device to move to the standby position. 如請求項8的基板處理裝置之噴嘴的清洗方法,其中該第二供應系統包括一清洗液體供應裝置,以及控制該供應系統提供該物質包括:藉由該清洗液體供應裝置提供一清洗液體以沖洗並去除殘留在該第一噴嘴上的該殘留物。 The cleaning method of a nozzle of a substrate processing device as claimed in claim 8, wherein the second supply system includes a cleaning liquid supply device, and controlling the supply system to provide the substance includes: providing a cleaning liquid for flushing through the cleaning liquid supply device and remove the residue remaining on the first nozzle. 如請求項8的基板處理裝置之噴嘴的清洗方法,其中該第二供應系統包括一氣體供應裝置,以及控制該供應系統提供該物質包括:藉由該氣體供應裝置提供一乾燥氣體以去除殘留在該第一噴嘴上的該殘留物及吹乾該第一噴嘴。 The cleaning method of a nozzle of a substrate processing device as claimed in claim 8, wherein the second supply system includes a gas supply device, and controlling the supply system to provide the substance includes: providing a dry gas through the gas supply device to remove residual The residue on the first nozzle and blow dry the first nozzle.
TW111137113A 2022-09-29 2022-09-29 Spraying and cleaning system, substrate processing device and cleaning method of nozzle thereof TWI820940B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208435468U (en) * 2018-02-26 2019-01-29 江苏美的清洁电器股份有限公司 Water circuit system for dust catcher and the dust catcher with it
CN217468353U (en) * 2022-06-06 2022-09-20 晟盈半导体设备(江苏)有限公司 High-speed cleaning and drying device suitable for electroplated wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208435468U (en) * 2018-02-26 2019-01-29 江苏美的清洁电器股份有限公司 Water circuit system for dust catcher and the dust catcher with it
CN217468353U (en) * 2022-06-06 2022-09-20 晟盈半导体设备(江苏)有限公司 High-speed cleaning and drying device suitable for electroplated wafer

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