JP6215748B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the substrate using a substrate processing apparatus. For example, by supplying a chemical solution onto a substrate having a resist pattern formed on the surface, a process such as etching is performed on the surface of the substrate. Further, after the etching process is completed, a removal liquid is supplied onto the substrate to remove the resist, or a cleaning liquid is supplied onto the substrate to clean the substrate.

  When this type of substrate processing solution is used in an environment where oxygen exists, such as in the atmosphere, the oxygen may adversely affect the substrate. In particular, when a metal film is formed on the surface of the substrate, for example, when oxygen is dissolved in the treatment liquid that is the removal liquid and the oxygen concentration of the treatment liquid increases, the metal film on the substrate is oxidized by the treatment liquid. There are things to do. Since the metal oxide is etched by the treatment liquid, the metal film is reduced. It is necessary to prevent such adverse effects as much as possible. Therefore, in the substrate processing apparatus disclosed in Patent Document 1, a blocking member that faces the substrate held by the substrate holding mechanism is provided. The blocking member includes a substrate facing surface that faces the substrate, and a peripheral wall portion that protrudes from the periphery of the substrate facing surface toward the substrate holding mechanism. In the substrate processing apparatus of Patent Document 1, by providing a blocking member, it is possible to block the atmosphere on the substrate surface from the atmosphere outside the blocking member and suppress an increase in the oxygen concentration of the atmosphere on the substrate surface. Patent Documents 2 and 3 disclose a substrate processing apparatus having a sealed chamber. In a substrate processing apparatus having a sealed chamber, it is possible to easily reduce the oxygen concentration in the atmosphere around the substrate. In the substrate processing apparatuses of Patent Documents 2 and 3, a nozzle for supplying a processing liquid to the substrate is further provided in the internal space of the sealed chamber.

JP 2010-56218 A JP 2011-216607 A US Patent Application Publication No. 2012/0103522

  By the way, in a substrate processing apparatus in which a discharge part (nozzle) is provided inside the chamber, a liquid such as a processing liquid adheres around the discharge part. In this case, if the liquid droplet falls on the substrate when the substrate is unloaded, the substrate is contaminated. Although it is conceivable to dry the discharge part by supplying gas into the chamber, the substrate processing chamber is large, so that it is necessary to increase the gas flow rate, which is inefficient.

  The present invention has been made in view of the above problems, and an object thereof is to efficiently dry a discharge unit.

  The invention according to claim 1 is a substrate processing apparatus for processing a substrate, wherein a chamber lid portion having a lower opening and forming a lid internal space having a larger radial size than the lower opening, and a main body A chamber body that forms an internal space and has an upper opening that is vertically opposite to the lower opening, and the upper opening is covered with the chamber lid, thereby forming a chamber together with the chamber lid; A substrate holding unit that holds the substrate in a horizontal state in the chamber, a discharge unit that is disposed in the lid internal space and discharges a processing liquid toward the upper surface of the substrate, and a discharge unit that discharges the discharge unit above the lower opening. A discharge portion moving mechanism that is selectively disposed at a position and a standby position that is separated from the lower opening in the radial direction in the inner space of the lid, and a gas supply portion that supplies gas to the inner space of the lid By controlling the exhaust unit for discharging the gas in the lid internal space and the discharge unit moving mechanism, the discharge unit is arranged at the discharge position when supplying the processing liquid from the discharge unit to the substrate, And a control unit that places the discharge unit at the standby position when the discharge unit is dried during a period in which the processing liquid is not supplied from the discharge unit to the substrate.

  A second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein the shielding plate is disposed in the lid inner space and faces the upper surface of the substrate, and the shielding plate is disposed in the lid inner space. And a shielding plate moving mechanism that moves relative to the chamber lid portion in the up-down direction, and the control unit controls the shielding plate moving mechanism, so that the discharge unit transfers the substrate to the substrate. The shielding plate is disposed above the discharge unit when the treatment liquid is supplied, and the lower opening is opened by the shielding plate when the discharge unit is dried during a period when the treatment liquid is not supplied from the discharge unit to the substrate. Block.

  Invention of Claim 3 is the substrate processing apparatus of Claim 1 or 2, Comprising: The said chamber cover part is equipped with the discharge port which discharges | emits the liquid in the said cover internal space, The said discharge part is the said discharge part. Pre-dispensing is performed in the state of being placed at the standby position.

  Invention of Claim 4 is the substrate processing apparatus of Claim 3, Comprising: The said chamber lid part is the said cup diameter lid body part which turned upside down, and the said diameter from the lower end part of the said lid body part. And an annular lid bottom surface portion that extends inward in the direction and is provided with the lower opening at the center portion, and the upper surface of the lid bottom surface portion is directed downward toward the radially outward direction, and the discharge port Is provided at a connection portion between the lid bottom surface portion of the chamber lid portion and the lid main body portion.

  A fifth aspect of the present invention is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the discharge section is a discharge head that discharges a processing liquid and a member that extends in a horizontal direction. The discharge head is fixed to an end portion, and the fixed end portion includes a head support portion attached to the chamber lid portion in the lid internal space, and the discharge portion moving mechanism has the discharge head centered on the fixed end portion. A head rotation mechanism that rotates together with the head support portion.

  A sixth aspect of the present invention is the substrate processing apparatus according to the fifth aspect, wherein the head rotating mechanism is provided on an upper surface of the chamber lid.

  A seventh aspect of the present invention is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the chamber lid portion is moved relative to the chamber body in the vertical direction, and the chamber The apparatus further includes a chamber opening / closing mechanism that forms the chamber in which the substrate is disposed by covering the upper opening of the main body with the chamber lid.

  According to an eighth aspect of the present invention, in the substrate processing apparatus according to the seventh aspect, before the chamber is formed, gas is supplied to the inner space of the lid by the gas supply unit, and the lid is formed. The interior space is filled with the gas.

  According to the present invention, the discharge part can be efficiently dried by the gas supplied to the lid inner space.

It is sectional drawing which shows the structure of a substrate processing apparatus. It is sectional drawing which shows a substrate processing apparatus. It is sectional drawing which shows a substrate processing apparatus. It is a figure which shows the scan nozzle in a chamber cover part. It is a block diagram which shows a gas-liquid supply part and a gas-liquid discharge part. It is a figure which shows the flow of a process of a board | substrate. It is sectional drawing which shows a substrate processing apparatus. It is a figure which shows the flow of the process which wash | cleans the inside of a chamber cover part. It is a figure for demonstrating the operation | movement which wash | cleans the inside of a chamber cover part. It is sectional drawing which shows the other example of a substrate processing apparatus.

  FIG. 1 is a cross-sectional view showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that supplies a processing liquid to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as “substrate 9”) to process the substrates 9 one by one. In FIG. 1, the provision of parallel oblique lines is omitted in the cross section of a part of the configuration of the substrate processing apparatus 1 (the same applies to other cross sectional views).

  The substrate processing apparatus 1 includes a chamber 21, a substrate holding unit 31, a substrate rotating mechanism 35, a first moving mechanism 41, a second moving mechanism 42, a third moving mechanism 43, a shielding plate 51, and a shielding plate. A rotation mechanism 55 and a housing 11 are provided. The housing 11 accommodates the chamber 21, the substrate holding part 31, the shielding plate 51, and the like.

  The chamber 21 has a substantially cylindrical shape with a lid and a bottom with a central axis J1 facing in the vertical direction as a center. The chamber 21 includes a chamber main body 22 and a chamber lid portion 23. The chamber body 22 and the chamber lid portion 23 face each other in the vertical direction. In the state shown in FIG. 1, the chamber main body 22 and the chamber lid portion 23 are separated from each other in the vertical direction. The chamber main body 22 has a substantially cylindrical shape with a bottom centered on the central axis J1, and forms a main body internal space 221. The chamber lid portion 23 has a substantially cylindrical shape with a lid centered on the central axis J1, and forms a lid internal space 231. The outer diameter of the chamber body 22 and the outer diameter of the chamber lid 23 are approximately equal.

  The chamber body 22 has a substantially circular upper opening 222. The chamber lid 23 has a substantially circular lower opening 232. The upper opening 222 of the chamber body 22 faces the lower opening 232 of the chamber lid 23 in the vertical direction. The diameter of the upper opening 222 of the chamber body 22 and the diameter of the lower opening 232 of the chamber lid 23 are approximately equal. Further, the size of the inner space 231 of the chamber lid 23 in the radial direction centered on the central axis J1 is larger than the size (that is, the diameter) of the lower opening 232 in the radial direction. Details of the structure of the chamber body 22 and the chamber lid 23 will be described later.

  The substrate holding part 31 has a substantially disc shape centered on the central axis J1. The substrate holding unit 31 is disposed below the substrate 9 and holds the outer edge portion of the substrate 9 in a horizontal state. In the state shown in FIG. 1, the substrate holding portion 31 is located between the chamber body 22 and the chamber lid portion 23 in the vertical direction. The diameter of the substrate holding part 31 is larger than the diameter of the substrate 9. The diameter of the substrate holding part 31 is smaller than the diameter of the upper opening 222 of the chamber body 22 and the diameter of the lower opening 232 of the chamber lid part 23. The upper opening 222 of the chamber body 22 and the lower opening 232 of the chamber lid 23 face the substrate 9 and the substrate holding unit 31 in the vertical direction. The substrate rotation mechanism 35 is disposed below the substrate holding unit 31. The substrate rotation mechanism 35 rotates the substrate 9 together with the substrate holder 31 around the central axis J1.

  The shielding plate 51 has a substantially disc shape centered on the central axis J1. The shielding plate 51 is disposed in a lid internal space 231 that is an internal space of the chamber lid portion 23. The size (that is, the diameter) of the shielding plate 51 in the radial direction is preferably larger than the diameter of the lower opening 232 of the chamber lid 23. The shielding plate 51 can close the lower opening 232 of the chamber lid 23. The shielding plate 51 faces the upper surface 91 of the substrate 9 held by the substrate holding part 31 in the vertical direction via the lower opening 232.

  The shielding plate rotation mechanism 55 is disposed above the shielding plate 51. The shielding plate rotation mechanism 55 is, for example, a hollow shaft motor. By the shielding plate rotating mechanism 55, the shielding plate 51 rotates around the central axis J1 in the lid internal space 231 of the chamber lid portion 23. The rotation of the shielding plate 51 by the shielding plate rotation mechanism 55 is performed independently of the rotation of the substrate 9 by the substrate rotation mechanism 35.

  The rotating shaft 551 of the shielding plate rotating mechanism 55 is connected to the shielding plate 51 via a through hole provided in the upper portion of the housing 11 and a through hole provided in the upper portion of the chamber lid portion 23. A part around the through hole of the housing 11 and a part around the through hole of the chamber lid 23 are connected by a substantially cylindrical expansion / contraction member 111 (for example, a bellows) that can expand and contract in the vertical direction. Further, the rotary shaft 551 is provided with a substantially disc-shaped flange portion 553, and a substantially cylindrical shape in which an outer peripheral portion of the flange portion 553 and a portion around the through hole of the housing 11 can expand and contract in the vertical direction. Connected to each other by an elastic member 552 (for example, bellows). In the substrate processing apparatus 1, the space inside the housing 11 and the space outside the housing 11 are isolated by the flange portion 553 and the elastic member 552. In addition, the expansion / contraction member 111 separates the space inside the chamber lid 23 from the space inside the housing 11 and outside the chamber lid 23.

  For example, the first moving mechanism 41 is disposed on the upper side of the housing 11. The first moving mechanism 41 moves the shielding plate 51 in the vertical direction together with the shielding plate rotating mechanism 55. The shielding plate 51 is moved in the vertical direction in the lid internal space 231 of the chamber lid 23 by the first moving mechanism 41. As described above, since the shielding plate 51 is larger than the lower opening 232 of the chamber lid portion 23, the shielding plate 51 passes through the lower opening 232 to the outside of the chamber lid portion 23 (below a lid bottom surface portion 234 described later). Never move. The first moving mechanism 41 includes, for example, a motor and a ball screw (the same applies to the second moving mechanism 42 and the third moving mechanism 43).

  The chamber lid portion 23 includes a lid main body portion 233 and a lid bottom surface portion 234. The lid body 233 has a substantially cylindrical shape with a lid centered on the central axis J1. In other words, the lid main body 233 has a cup shape that is upside down. As described above, the through hole in the central portion of the lid main body portion 233, that is, the through hole in the upper portion of the chamber lid portion 23 is formed by the elastic members 111 and 552, a part of the upper portion of the housing 11, and the flange portion 553. Blocked. These members that close the through hole may be regarded as a part of the lid main body 233. A cylindrical space formed by the elastic members 111 and 552 is a part of the lid internal space 231.

  The lid bottom surface portion 234 has a substantially annular plate shape centered on the central axis J1, and the above-described lower opening 232 is provided in the central portion. The lid bottom surface portion 234 extends radially inward from the lower end portion of the lid main body portion 233. The upper surface 235 and the lower surface 236 of the lid bottom surface part 234 are inclined surfaces that go downward as they go radially outward. A lid portion discharge port 237 is provided at a connection portion between the lid bottom surface portion 234 and the lid body portion 233 of the chamber lid portion 23. The liquid and gas in the lid internal space 231 are discharged via the lid discharge port 237.

  In the state shown in FIG. 1, the lower surface 512 of the shielding plate 51 superimposed on the lower opening 232 of the chamber lid portion 23 contacts the upper surface 235 of the lid bottom surface portion 234 over the entire circumference around the lower opening 232. Specifically, the outer peripheral portion of the lower surface 512 of the shielding plate 51 is in contact with the entire surface of the upper surface 235 of the lid bottom surface portion 234 in the vicinity of the lower opening 232. As a result, the lower opening 232 of the chamber lid 23 is closed by the shielding plate 51, and the lid internal space 231 becomes a closed space. Although the contact portion between the shielding plate 51 and the lid bottom surface portion 234 does not have an airtight structure, the contact portion may have an airtight structure, and the lid internal space 231 may be a sealed space isolated from the external space.

  The second moving mechanism 42 is disposed on the side of the chamber body 22 and moves the chamber lid portion 23 in the vertical direction. Specifically, the chamber lid 23 is moved by the second moving mechanism 42 between the “upper position” shown in FIG. 1 and the “lower position” shown in FIG. The lower opening 232 is positioned above the substrate 9 on the substrate holding unit 31 in a state where the chamber lid 23 is disposed at the upper position, and the lower opening 232 is disposed in a state where the chamber lid 23 is disposed at the lower position. Is located below the substrate 9 on the substrate holding portion 31. When the chamber lid 23 moves from the upper position to the lower position below the upper position, the shielding plate 51 also moves in the vertical direction by the first moving mechanism 41. Actually, the relative position of the shielding plate 51 in the vertical direction with respect to the chamber lid 23 is changed. As described above, the first moving mechanism 41 and the second moving mechanism 42 move the shielding plate 51 so as to move the shielding plate 51 in the vertical direction relative to the chamber lid 23 in the lid internal space 231 of the chamber lid 23. Mechanism.

  As shown in FIG. 1, the chamber main body 22 includes an outer cylinder part 223, an outer cylinder connection part 224, a cup part 225, and a main body bottom part 226. The cup part 225 has a substantially cylindrical shape centered on the central axis J1. The cup portion 225 is located over the entire circumference on the radially outer side of the substrate rotation mechanism 35 below the chamber lid portion 23. The cup part 225 includes a substantially cylindrical cup side wall part 227a centering on the central axis J1, and a substantially annular plate-shaped cup canopy part 227b extending radially inward from the upper end of the cup side wall part 227a.

  The outer cylinder part 223 is a substantially cylindrical shape centering on the central axis J1. The outer cylinder part 223 is located over the entire circumference on the radially outer side of the cup part 225. The outer cylinder part 223 is, for example, a bellows in which a plurality of circumferential fold lines and a plurality of circumferential valley fold lines are alternately arranged in the vertical direction. Under the outer cylinder part 223, the cup part 225, and the substrate holding part 31, a bottomed substantially cylindrical main body bottom part 226 is disposed. The lower end portion of the outer cylinder portion 223 is connected to the upper end portion of the side wall portion of the main body bottom portion 226 over the entire circumference. A main body discharge port 226 a is provided on the bottom surface of the main body bottom 226. The main body discharge port 226 a is disposed below the substrate 9, the substrate holding part 31, and the cup part 225 in the main body internal space 221 that is an internal space of the chamber main body 22. The liquid and gas in the chamber body 22 are discharged out of the chamber body 22 (that is, outside the chamber 21) through the body discharge port 226a. In the main body bottom 226, a plurality of main body discharge ports 226a arranged in the circumferential direction may be provided.

  The outer cylinder connection part 224 has a substantially annular plate shape centered on the central axis J1. The outer cylinder connection part 224 connects the upper end part of the outer cylinder part 223 and the outer edge part of the cup part 225. Specifically, the outer cylinder connection part 224 connects the upper end part of the outer cylinder part 223 and the outer edge part of the cup canopy part 227b. The outer cylinder connection portion 224 closes the gap between the upper end portion of the outer cylinder portion 223 and the cup portion 225.

  The third moving mechanism 43 is disposed on the side of the chamber body 22 and moves a part of the chamber body 22 in the vertical direction. Specifically, the cup portion 225 of the chamber body 22 moves between the “lower position” shown in FIGS. 1 and 2 and the “upper position” shown in FIG. 3 by the third moving mechanism 43. When the cup portion 225 is disposed at the lower position, the upper opening 222 is located below the substrate 9 on the substrate holding portion 31, and when the cup portion 225 is disposed at the upper position, the upper opening 222 is the substrate. It is located above the substrate 9 on the holding unit 31. When the cup part 225 moves in the vertical direction, the outer cylinder part 223 expands and contracts in the vertical direction. In the substrate processing apparatus 1, the main body bottom 226 and the substrate holder 31 of the chamber main body 22 do not move in the vertical direction.

  As shown in FIG. 2, in a state where the chamber lid portion 23 is located at the lower position and the cup portion 225 of the chamber body 22 is also located at the lower position, the lower opening 232 of the chamber lid portion 23 is formed in the upper opening 222 of the chamber body 22. The upper opening 222 is covered with the chamber lid 23 while facing each other. As a result, the chamber 21 having a sealed space (that is, a space including the lid internal space 231 and the main body internal space 221, hereinafter referred to as “chamber space”) is formed by the chamber lid portion 23 and the chamber main body 22. Is done. Specifically, the connection portion between the lid main body portion 233 and the lid bottom surface portion 234 in the chamber lid portion 23 is in contact with the outer cylinder portion 223 of the chamber main body 22 through the outer cylinder connection portion 224 over the entire circumference. A chamber 21 is formed.

  Further, as shown in FIG. 3, the chamber lid portion 23 is similarly formed in the upper opening 222 of the chamber body 22 even when the cup portion 225 of the chamber body 22 is located at the upper position and the chamber lid portion 23 is located at the upper position. The chamber 21 is formed by the lower opening 232 approaching and the chamber lid 23 covering the upper opening 222. As shown in FIGS. 2 and 3, the substrate 9 and the substrate holder 31 are accommodated in the chamber 21 (that is, the chamber space). On the other hand, as shown in FIG. 1, when the chamber lid portion 23 is located at the upper position and the cup portion 225 of the chamber body 22 is located at the lower position, the lower opening 232 of the chamber lid portion 23 is located above the upper opening 222. Separate. Therefore, an annular gap is formed between the lid bottom surface portion 234 of the chamber lid portion 23 and the cup canopy portion 227b of the cup portion 225 around the substrate 9 on the substrate holding portion 31, and the chamber 21 is opened. (I.e., upper opening 222 is substantially open). As described above, the second moving mechanism 42 and the third moving mechanism 43 move the chamber lid portion 23 relative to the chamber main body 22 in the vertical direction, and the upper opening 222 of the chamber main body 22 is moved to the chamber lid portion 23. It is a chamber opening and closing mechanism that forms the chamber 21 by covering with.

  FIG. 4 is a diagram showing the inside of the chamber lid 23 and shows a cross section of the chamber lid 23 perpendicular to the central axis J1. In FIG. 4, the shielding plate 51 is indicated by a two-dot chain line. As shown in FIGS. 3 and 4, a scan nozzle 186 as a discharge unit is attached to the chamber lid 23. The scan nozzle 186 is disposed in the lid internal space 231 and discharges the processing liquid toward the upper surface 91 of the substrate 9. The scan nozzle 186 includes an ejection head 861 and a head support portion 862. The discharge head 861 discharges the processing liquid downward. The head support portion 862 is a member extending in a substantially horizontal direction that supports the ejection head 861. The head support portion 862 is curved so as to protrude outward in the radial direction in plan view (see FIG. 4). In other words, the scan nozzle 186 has a substantially arc shape, and the scan nozzle 186 is arranged in the lid internal space 231 so that the head support portion 862 is along the side wall portion of the lid body portion 233. One end portion (that is, a fixed end portion) of the head support portion 862 is attached to the canopy portion 238 (see FIG. 3) of the lid main body portion 233 of the chamber lid portion 23 in the lid internal space 231. The ejection head 861 is fixed to the other end (that is, free end) of the head support 862.

  A head rotation mechanism 863 is provided on the top surface of the canopy portion 238 of the chamber lid portion 23. The head rotation mechanism 863 rotates the ejection head 861 together with the head support portion 862 substantially horizontally around the fixed end portion of the head support portion 862. The head rotation mechanism 863 causes the ejection head 861 to move in the radial direction relative to the lower opening 232 in the ejection position above the lower opening 232 (see the scan nozzle 186 indicated by the two-dot chain line in FIG. 4) and the lid internal space 231. It is selectively disposed at a remote standby position (see the scan nozzle 186 indicated by the solid line in FIG. 4). In other words, the head rotation mechanism 863 includes a discharge position where the discharge head 861 faces the upper surface 91 of the substrate 9 and a standby position where the entire scan nozzle 186 is positioned above the lid bottom surface portion 234 (above the cup canopy portion 227b. The scan nozzle 186 can be arranged at the same position. As described above, the head rotation mechanism 863 is a discharge unit moving mechanism that moves the scan nozzle 186 that is a discharge unit in the lid internal space 231. The scan nozzle 186 disposed at the standby position does not come into contact with the shielding plate 51 that moves in the vertical direction. The ejection unit moving mechanism may include a head lifting mechanism that moves the ejection head 861 and the head support unit 862 in the vertical direction.

  As shown in FIG. 1, an upper central nozzle 181 is provided in the rotating shaft 551 of the shielding plate rotating mechanism 55. A processing liquid discharge port that discharges the processing liquid toward the upper surface 91 of the substrate 9 is provided at the center of the lower end of the upper central nozzle 181. Pure water delivered from a pure water supply unit 814 (see FIG. 5), which will be described later, is discharged from the processing liquid discharge port. In addition, a substantially annular gas outlet is provided around the processing liquid outlet at the lower end of the upper central nozzle 181. An inert gas delivered from an inert gas supply unit 816, which will be described later, flows from the gas outlet to a space below the shielding plate 51 (that is, a space between the lower surface 512 of the shielding plate 51 and the upper surface 91 of the substrate 9). Supplied towards. The lower end of the upper central nozzle 181 is disposed at approximately the same position as the lower surface 512 of the shielding plate 51 in the vertical direction. That is, the processing liquid discharge port and the gas outlet of the upper central nozzle 181 are provided in the central portion of the lower surface 512 of the shielding plate 51.

  A lower nozzle 180 is attached to the center of the substrate holder 31. The lower nozzle 180 faces the upper central nozzle 181 with the substrate 9 in between. The upper end of the lower nozzle 180 is slightly separated from the lower surface 92 of the substrate 9. A plurality of outer lid nozzles 182 and a plurality of inner lid nozzles 189 are provided on the top lid portion 238 of the lid body portion 233 of the chamber lid portion 23. The plurality of outer lid nozzles 182 and the plurality of inner lid nozzles 189 face the upper surface 511 of the shielding plate 51 in the vertical direction. The plurality of outer lid nozzles 182 are circumferentially arranged around the central axis J1. The plurality of inner lid nozzles 189 are arranged on the inner side (center axis J1 side) than the plurality of outer lid nozzles 182.

  FIG. 5 is a block diagram showing the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 included in the substrate processing apparatus 1. The gas-liquid supply unit 18 includes a processing liquid supply unit 811, a gas supply unit 812, and a cleaning liquid supply unit 810. The processing liquid supply unit 811 includes a scan nozzle 186, an upper center nozzle 181, a lower nozzle 180, a chemical solution supply unit 813, and a pure water supply unit 814. The chemical solution supply unit 813 is connected to the scan nozzle 186 via a valve. The pure water supply unit 814 is connected to the upper central nozzle 181 through a valve. The pure water supply unit 814 is also connected to the lower nozzle 180 via a valve.

  The gas supply unit 812 includes an upper central nozzle 181, a plurality of outer lid nozzles 182, and an inert gas supply unit 816. The inert gas supply unit 816 is connected to the upper central nozzle 181 through a valve. The inert gas supply unit 816 is also connected to a plurality of outer lid nozzles 182 via valves. The cleaning liquid supply unit 810 includes a plurality of inner lid nozzles 189, a lower nozzle 180, and a pure water supply unit 814. As described above, the pure water supply unit 814 is connected to the lower nozzle 180. The pure water supply unit 814 is also connected to a plurality of inner lid nozzles 189 via valves.

  In the gas-liquid supply unit 18, the upper central nozzle 181 is shared by the processing liquid supply unit 811 and the gas supply unit 812, and the lower nozzle 180 is shared by the processing liquid supply unit 811 and the cleaning liquid supply unit 810. Further, the pure water supply unit 814 is shared by the processing liquid supply unit 811 and the cleaning liquid supply unit 810. The processing liquid supply unit 811, the gas supply unit 812, and the cleaning liquid supply unit 810 may be configured by components that are independent from each other. Further, the arrangement of the nozzles provided in the chamber 21 may be changed as appropriate.

  The gas / liquid discharge unit 19 includes a main body discharge port 226a, a lid discharge port 237, a gas / liquid separation unit 193, a main body exhaust unit 194, a chemical solution recovery unit 195a, a liquid discharge unit 196, and a gas / liquid separation unit 197. A lid exhaust unit 198, a chemical recovery unit 195 b, and a drainage unit 199. A main body discharge port 226 a provided in the chamber main body 22 is connected to the gas-liquid separator 193. The gas-liquid separation unit 193 is connected to the main body exhaust unit 194, the chemical solution recovery unit 195a, and the drainage unit 196 through valves. A lid discharge port 237 provided in the chamber lid 23 is connected to the gas-liquid separator 197. The gas-liquid separation unit 197 is connected to the lid exhaust unit 198, the chemical solution recovery unit 195b, and the drainage unit 199 through valves. Each configuration of the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 is controlled by the control unit 10. The first moving mechanism 41, the second moving mechanism 42, the third moving mechanism 43, the substrate rotating mechanism 35, and the shielding plate rotating mechanism 55 (see FIG. 1) are also controlled by the control unit 10.

The chemical solution supplied from the chemical solution supply unit 813 to the substrate 9 via the scan nozzle 186 is, for example, a polymer removing solution or an etching solution such as hydrofluoric acid or an aqueous tetramethylammonium hydroxide solution. The pure water supply unit 814 supplies pure water (DIW: deionized water) to the substrate 9 through the upper central nozzle 181 and the lower nozzle 180. The treatment liquid supply unit 811 includes another supply unit that supplies a treatment liquid other than the chemical liquid and pure water (for example, a solvent such as isopropyl alcohol (IPA), another acid or alkali solution, a removal liquid, or the like). It may be. As will be described later, the pure water supplied from the pure water supply unit 814 to the lid internal space 231 is also a cleaning liquid for cleaning the inside of the chamber lid unit 23. The cleaning liquid supply unit 810 may include another supply unit that supplies a cleaning liquid other than pure water. The gas supplied from the inert gas supply unit 816 is, for example, nitrogen (N ₂ ) gas. The gas supply unit 812 may include another supply unit that supplies an inert gas other than the nitrogen gas or a gas other than the inert gas.

  Next, the flow of processing of the substrate 9 by the substrate processing apparatus 1 will be described with reference to FIG. In the substrate processing apparatus 1, first, as shown in FIG. 1, the chamber lid portion 23 is located at the upper position, and the cup portion 225 of the chamber body 22 is located at the lower position. In other words, the chamber 21 is opened. Further, the shielding plate 51 is overlaid on the lower opening 232 of the chamber lid portion 23, and the lower surface 512 of the shielding plate 51 is in contact with the upper surface 235 of the lid bottom surface portion 234, thereby closing the lower opening 232 and closing the lid internal space 231. It becomes space. Further, in the substrate processing apparatus 1, nitrogen gas is supplied to the lid internal space 231 from the plurality of outer lid nozzles 182 of the gas supply unit 812 (see FIG. 5), and the gas in the lid internal space 231 is transferred to the lid discharge port. It is discharged from 237 to the outside of the chamber lid 23. Therefore, the lid internal space 231 is filled with nitrogen gas (step S11). In principle, the substrate processing apparatus 1 always supplies nitrogen gas to the lid internal space 231 and discharges gas from the lid internal space 231.

  In step S <b> 11, the lower opening 232 of the chamber lid 23 does not necessarily need to be sealed by the shielding plate 51, and if the shielding plate 51 overlaps the lower opening 232, the shielding plate 51 and the lid bottom surface portion 234 are used. A minute gap may exist between the two. Even in this state, the supply amount of nitrogen gas from the gas supply unit 812 to the lid internal space 231 is controlled, the inflow amount of nitrogen gas to the lid internal space 231, the gap, and the lid discharge port 237. By making the gas outflow amount approximately equal, the lid internal space 231 is filled with nitrogen gas. In FIG. 1, the substrate 9 is illustrated, but step S <b> 11 is performed before the substrate 9 is carried into the substrate processing apparatus 1.

  Subsequently, the substrate 9 is carried into the housing 11 from the carry-in / out port (not shown) provided in the housing 11 with the chamber lid 23 being separated from the chamber main body 22 as described above. . The substrate 9 passes through the gap between the lower surface 236 of the lid bottom surface portion 234 and the upper surface of the cup canopy portion 227b, moves below the shielding plate 51, and is held by the substrate holding portion 31 (step S12). In step S <b> 12, the substrate 9 is held by the substrate holding unit 31 above the upper opening 222 of the chamber body 22.

  When the substrate 9 is held by the substrate holding portion 31, the second moving mechanism 42 is driven to lower the chamber lid 23, and the chamber lid 23 is moved from the upper position shown in FIG. 1 to the lower position shown in FIG. Move to. In other words, the chamber lid 23 moves relative to the chamber body 22 in the up-down direction. Then, the upper opening 222 of the chamber body 22 is covered with the chamber lid 23, whereby the chamber 21 is closed (step S13). That is, the chamber 21 that accommodates the substrate 9 and the substrate holder 31 is formed. At this time, when the first moving mechanism 41 is driven, the shielding plate 51 rises relative to the chamber lid portion 23, and the shielding plate 51 moves upward from the lower opening 232 of the chamber lid portion 23 in the chamber 21. Separate.

  As described above, when the chamber lid portion 23 moves from the upper position to the lower position, the substrate 9 held by the substrate holding portion 31 passes through the lower opening 232 of the chamber lid portion 23 and the lid inner space 231. Move to. In other words, with the chamber 21 formed in step S13, the substrate 9 is located in the lid internal space 231 in the chamber space. Since the lid internal space 231 is filled with nitrogen gas as described above, by moving the substrate 9 to the lid internal space 231, a nitrogen gas atmosphere (that is, a low oxygen content) can be quickly generated around the substrate 9. Atmosphere). In the lid internal space 231, the upper surface 91 of the substrate 9 and the lower surface 512 of the shielding plate 51 are opposed to each other in the vertical direction.

  In the state shown in FIG. 2, the nitrogen gas is supplied to the lid internal space 231 from the plurality of outer lid nozzles 182 positioned above the shielding plate 51, whereby the atmospheric pressure in the lid internal space 231 is changed to the atmospheric pressure in the main body internal space 221. Higher than. Therefore, nitrogen gas in the lid internal space 231 is sent from the gap between the shielding plate 51 and the lid bottom surface portion 234 of the chamber lid portion 23 to the main body internal space 221 through the lower opening 232 and the upper opening 222 ( Supply). Further, the gas in the main body internal space 221 is discharged from the main body discharge port 226 a to the outside of the chamber 21. As a result, the nitrogen gas from the gas supply unit 812 is also filled into the main body internal space 221 after a predetermined time has elapsed since the formation of the chamber 21. In other words, nitrogen gas is supplied into the chamber 21 by the gas supply unit 812 and is filled (step S14). Hereinafter, the process of step S14 is referred to as “gas replacement process”.

  In the gas replacement process in step S <b> 14, in addition to the plurality of outer lid nozzles 182, the upper central nozzle 181 is also used for supplying nitrogen gas into the chamber 21. That is, the nitrogen gas from the gas supply unit 812 is also supplied to the space between the lower surface 512 of the shielding plate 51 and the upper surface 91 of the substrate 9 via the gas outlet of the upper central nozzle 181. Thereby, the atmosphere of the space between the shielding plate 51 and the substrate 9 can be quickly replaced with a nitrogen gas atmosphere.

  Next, when the second moving mechanism 42 and the third moving mechanism 43 are driven, the chamber lid portion 23 and the cup portion 225 of the chamber body 22 are raised, and the chamber lid portion 23 and the cup portion 225 are respectively shown in FIG. It moves from the lower position shown to the upper position shown in FIG. In other words, the substrate 9 is lowered relative to the chamber 21 together with the substrate holder 31 by the second moving mechanism 42 and the third moving mechanism 43. The second moving mechanism 42 and the third moving mechanism 43 are substrate moving mechanisms that move the substrate 9 together with the substrate holding portion 31 relative to the chamber 21 in the vertical direction. At this time, when the first moving mechanism 41 is driven, the relative position of the shielding plate 51 to the chamber lid portion 23 is not changed. That is, the first moving mechanism 41 maintains the state in which the shielding plate 51 is spaced upward from the lower opening 232 of the chamber lid 23.

  As described above, when the chamber 21 moves from the lower position to the upper position, the substrate 9 moves from the lid inner space 231 to the main body inner space 221 through the lower opening 232 and the upper opening 222 in the chamber 21. (Step S15). As a result, the cup portion 225 is positioned over the entire circumference on the radially outer side of the substrate 9 and the substrate holding portion 31 below the chamber lid portion 23.

  When the substrate 9 is positioned in the main body internal space 221, rotation of the substrate 9 by the substrate rotation mechanism 35 is started. Further, a predetermined amount of chemical solution is supplied from the chemical solution supply unit 813 (see FIG. 5) to the scan nozzle 186 disposed at a standby position radially outside the lower opening 232. Thereby, the discharge of the chemical solution from the discharge head 861 (see FIG. 4) in the state of being placed at the standby position, that is, pre-dispensing is performed (step S16). The chemical solution discharged from the discharge head 861 is received by the upper surface 235 of the lid bottom surface portion 234 and guided to the lid portion discharge port 237. The chemical solution that has passed through the lid discharge port 237 flows into the gas-liquid separation unit 197 shown in FIG. In the chemical solution recovery unit 195b, the chemical solution is recovered from the gas-liquid separation unit 197, and impurities are removed from the chemical solution through a filter or the like and then reused.

  When the pre-dispensing is finished, the scan nozzle 186 is rotated by the head rotating mechanism 863 shown in FIG. Thereby, as shown in FIG. 3, the ejection head 861 passes between the lower surface 512 of the shielding plate 51 and the upper surface 235 of the lid bottom surface portion 234, and between the shielding plate 51 and the lower opening 232, that is, the substrate. 9 is disposed at a discharge position above 9. Further, the head rotating mechanism 863 is controlled by the control unit 10, and the reciprocating movement of the ejection head 861 above the substrate 9 is started. The ejection head 861 continuously reciprocates in the horizontal direction along a predetermined movement path connecting the center portion and the outer edge portion of the substrate 9. Then, the chemical solution is supplied from the chemical solution supply unit 813 to the discharge head 861, and the chemical solution is supplied from the discharge head 861 in the lid internal space 231 to the upper surface 91 of the substrate 9 in the main body internal space 221 through the lower opening 232. Is supplied (step S17).

  The chemical solution from the discharge head 861 is continuously supplied to the upper surface 91 of the rotating substrate 9. The chemical solution spreads radially outward on the upper surface 91 by centrifugal force, and the entire upper surface 91 is covered with the chemical solution. By supplying the chemical solution from the ejection head 861 that swings in the horizontal direction to the rotating substrate 9, the chemical solution can be supplied to the upper surface 91 of the substrate 9 approximately uniformly. In addition, the uniformity of the temperature of the chemical solution on the substrate 9 can be improved. As a result, the uniformity of the chemical treatment for the substrate 9 can be improved.

  The chemical solution scattered from the outer peripheral edge of the rotating substrate 9 is received by the cup portion 225 and guided to the main body discharge port 226 a disposed below the cup portion 225. The chemical liquid that has passed through the main body discharge port 226a flows into the gas-liquid separator 193 shown in FIG. In the chemical solution recovery unit 195a, the chemical solution is recovered from the gas-liquid separation unit 193 and is reused after impurities and the like are removed from the chemical solution via a filter or the like.

  Further, in the state in which the chamber 21 is formed, the inner edge portion of the cup canopy portion 227 b that is the edge of the upper opening 222 comes into contact with the inner edge portion of the lid bottom surface portion 234 that is the edge of the lower opening 232. Thereby, the chemical solution scattered from the upper surface 91 of the substrate 9 is prevented from adhering to the lower surface 236 of the lid bottom surface portion 234 (the same applies to the processing in step S18 described later). Therefore, at the time of unloading the substrate 9 (and loading the next substrate 9) described later, the liquid falls from the lower surface 236 of the lid bottom surface portion 234 that forms a path through which the substrate 9 passes to the upper surface 91 of the substrate 9. It is prevented.

  In the substrate processing apparatus 1, while the chemical solution is being supplied to the substrate 9, as described above, the supply of the nitrogen gas by the gas supply unit 812 is continued, and the nitrogen gas atmosphere in the chamber space can be secured. It is preferable (same when supplying pure water described later). Further, nitrogen gas may be ejected from the gas ejection port of the upper central nozzle 181, and the nitrogen gas atmosphere around the substrate 9 may be ensured more reliably.

  When a predetermined time has elapsed from the start of the supply of the chemical solution, the supply of the chemical solution from the scan nozzle 186 to the substrate 9 is stopped. Further, the scan nozzle 186 passes between the lower surface 512 of the shielding plate 51 and the upper surface 235 of the lid bottom surface portion 234 by the head rotating mechanism 863 and does not overlap the lower opening 232 in the vertical direction as shown in FIG. Move to the standby position. As described above, when the processing liquid is supplied from the scan nozzle 186 to the substrate 9, the scan nozzle 186 is disposed at the discharge position by the head rotation mechanism 863, and when the processing liquid is not supplied from the scan nozzle 186 to the substrate 9, the head is rotated. The mechanism 863 places the scan nozzle 186 in the standby position.

  When the scan nozzle 186 moves to the standby position, pure water, which is a rinsing liquid, is applied to the upper surface 91 and the lower surface 92 of the substrate 9 via the upper central nozzle 181 and the lower nozzle 180 by the pure water supply unit 814 (see FIG. 5). Is supplied (step S18). Pure water from the pure water supply unit 814 is continuously supplied to the central portions of the upper surface 91 and the lower surface 92 of the substrate 9. The pure water spreads to the outer peripheral portions of the upper surface 91 and the lower surface 92 by the rotation of the substrate 9 and scatters from the outer peripheral edge of the substrate 9 to the outside. Pure water scattered from the substrate 9 is received by the cup portion 225 and guided to the main body discharge port 226a. The pure water that has passed through the main body discharge port 226a is discarded through the gas-liquid separation unit 193 and the drainage unit 196 (see FIG. 5). Thus, the cleaning of the cup portion 225 is substantially performed together with the rinsing process of the upper surface 91 and the cleaning process of the lower surface 92 of the substrate 9. When a predetermined time has elapsed from the start of the supply of pure water, the supply of pure water from the pure water supply unit 814 is stopped.

  When the supply of the processing liquid (chemical solution and pure water) to the substrate 9 is completed, the second moving mechanism 42 and the third moving mechanism 43 are driven to lower the chamber lid portion 23 and the cup portion 225 of the chamber body 22, Each of the chamber lid part 23 and the cup part 225 moves from the upper position shown in FIG. 7 to the lower position shown in FIG. In other words, the second moving mechanism 42 and the third moving mechanism 43 raise the substrate 9 together with the substrate holding portion 31 relative to the chamber 21. At this time, when the first moving mechanism 41 is driven, the relative position of the shielding plate 51 to the chamber lid portion 23 is not changed. That is, the first moving mechanism 41 maintains the state in which the shielding plate 51 is spaced upward from the lower opening 232 of the chamber lid 23.

  As described above, when the chamber 21 moves from the upper position to the lower position, the substrate 9 moves from the main body inner space 221 to the lid inner space 231 through the upper opening 222 and the lower opening 232 in the chamber 21. (Step S19). As shown in FIG. 2, in the lid internal space 231, the upper surface 91 of the substrate 9 and the lower surface 512 of the shielding plate 51 are opposed to each other in the vertical direction.

  Subsequently, the substrate 9 arranged in the lid internal space 231 is rotated at a relatively high speed around the central axis J1 together with the substrate holding unit 31 by the substrate rotation mechanism 35. Thereby, the processing liquid (mainly pure water) on the substrate 9 moves radially outward on the upper surface 91 and the lower surface 92 and scatters from the outer edge of the substrate 9 to the surroundings. As a result, the processing liquid on the substrate 9 is removed (step S20). Hereinafter, the process of step S20 is referred to as “drying process”. The rotation speed of the substrate 9 in step S20 is larger than the rotation speed of the substrate 9 in steps S17 and S18.

  In step S <b> 20, the processing liquid splashed from the rotating substrate 9 is received by the inner surface of the lid body 233 and the upper surface 235 of the lid bottom surface 234, and to the connection portion between the lid body 233 and the lid bottom surface 234. Moving. The processing liquid (that is, the processing liquid removed from the substrate 9 in step S20) is discarded through the lid discharge port 237, the gas-liquid separation unit 197, and the drainage unit 199 (see FIG. 5). In the chamber lid 23, as described above, the upper surface 235 of the lid bottom surface portion 234 is an inclined surface that goes downward as it goes outward in the radial direction. This prevents the processing liquid on the upper surface 235 from moving toward the lower opening 232 at the center. Further, since the processing liquid on the upper surface 235 moves radially outward, the processing liquid can be quickly discharged from the lid internal space 231.

  When the substrate 9 rotates in the lid internal space 231, the shielding plate 51 is rotated in the same rotational direction as the substrate 9 at the position where the shielding plate 51 is close to the upper surface 91 of the substrate 9 in the vertical direction by the shielding plate rotating mechanism 55. Rotate about the central axis J1 at a rotational speed approximately equal to the rotational speed of. By disposing the shielding plate 51 in the vicinity of the upper surface 91 of the substrate 9, the processing liquid splashed from the substrate 9 rebounds on the inner surface of the lid main body 233 and reattaches to the upper surface 91 of the substrate 9. It can be suppressed (or prevented). Further, when the shielding plate 51 rotates, the processing liquid adhering to the upper surface 511 and the lower surface 512 of the shielding plate 51 can be scattered around and removed from the shielding plate 51.

  In the drying process in step S20, in addition to the plurality of outer lid nozzles 182, the upper center nozzle 181 also ejects nitrogen gas. That is, nitrogen gas is supplied to the space between the lower surface 512 of the shielding plate 51 and the upper surface 91 of the substrate 9 through the gas outlet of the upper central nozzle 181. Thereby, the processing liquid can be discharged more rapidly from the space between the substrate 9 and the shielding plate 51 and the drying of the substrate 9 can be promoted.

  When the drying process of the substrate 9 is completed, the rotation of the substrate 9 by the substrate rotation mechanism 35 is stopped. Further, when the second moving mechanism 42 is driven, the chamber lid portion 23 rises from the position shown in FIG. 2 and is arranged at the upper position shown in FIG. As a result, the chamber lid 23 and the chamber body 22 are separated in the vertical direction, and the chamber 21 is opened (step S21). Then, the substrate 9 subjected to the above-described series of processing passes through the gap between the lower surface 236 of the lid bottom surface portion 234 and the upper surface of the cup canopy portion 227b by an external transport mechanism, and is carried out in the housing 11 It is carried out of the housing 11 through an inlet (not shown) (step S22).

  Actually, by driving the first moving mechanism 41 in parallel with the driving of the second moving mechanism 42, the shielding plate 51 opens the lower opening 232 of the chamber lid 23 in the open state of the chamber 21 shown in FIG. Block. Further, the supply of the nitrogen gas to the lid internal space 231 and the discharge of the gas in the lid internal space 231 are continued. Accordingly, in parallel with the unloading of the substrate 9 in step S22, a process of filling the lid internal space 231 with nitrogen gas is performed as step S11 for the next substrate 9. Further, by the nitrogen gas supplied to the lid internal space 231, the lid internal space 231 is dried (reduction in humidity), that is, disposed on the inner surface of the chamber lid portion 23, the upper surface 511 of the shielding plate 51, and the standby position. The scan nozzle 186 is also dried. The process of step S11 can be regarded as a drying process of the inner surface of the chamber lid 23 and the scan nozzle 186. Then, when the next substrate 9 is loaded and held by the substrate holding unit 31 (step S12), the processes of steps S13 to S22 are performed in the same manner as described above.

  Next, a process for cleaning the inside of the chamber lid 23 will be described with reference to FIG. Since the inside of the chamber lid 23 is gradually soiled by the processing liquid splashed from the substrate 9 during the drying process, for example, each time a predetermined number of substrates 9 are processed, the chamber lid 23 is cleaned by the process of FIG. When cleaning the inside of the chamber lid 23, as shown in FIG. 9, both the chamber lid 23 and the cup portion 225 of the chamber body 22 are positioned at the upper position, and the substrate 9 is placed in the chamber 21. Not placed. The scan nozzle 186 is disposed at the standby position. In the substrate processing apparatus 1, first, rotation of the shielding plate 51 by the shielding plate rotation mechanism 55 is started (step S31). The rotation speed of the shielding plate 51 is relatively high as in the drying process of the substrate 9. In addition, when the first moving mechanism 41 is driven, an operation in which the shielding plate 51 repeats rising and lowering in the lid internal space 231, that is, an up-and-down movement of the shielding plate 51 is started (step S <b> 32).

  Subsequently, pure water is sent from the pure water supply unit 814 (see FIG. 5) to the plurality of inner lid nozzles 189, and the pure water is discharged from the plurality of inner lid nozzles 189 toward the upper surface 511 of the shielding plate 51. . Also, pure water is sent from the pure water supply unit 814 to the lower nozzle 180 disposed in the main body internal space 221, and pure water is discharged upward from the lower nozzle 180. That is, pure water is applied from the lower nozzle 180 to the lower surface 512 of the shielding plate 51 through the upper opening 222 and the lower opening 232. As described above, in parallel with the rotation and vertical movement of the shielding plate 51, the cleaning liquid supply unit 810 (see FIG. 5) having the plurality of inner lid nozzles 189 and the lower nozzles 180 causes the upper surface 511 and the lower surface 512 of the shielding plate 51 to Pure water is supplied as a cleaning liquid, and the upper surface 511 and the lower surface 512 of the shielding plate 51 are cleaned (step S33).

  At this time, the cleaning liquid on the upper surface 511 and the lower surface 512 is shaken off at the outer peripheral edge of the shielding plate 51 that moves while moving up and down, and the inner surface of the chamber lid portion 23, that is, the inner side surface and the lid bottom surface portion of the lid body portion 233 It scatters to the upper surface 235 of 234 (refer the arrow which attaches | subjects code | symbol A1 in FIG. 9). In addition, the cleaning liquid is scattered to the scan nozzle 186 disposed at the standby position. As a result, the chemical component adhering to the inner surface of the chamber lid 23 and the surface of the scan nozzle 186 is washed away by the cleaning liquid. The cleaning liquid moves to a connection portion between the lid main body portion 233 and the lid bottom surface portion 234 and is discharged out of the chamber lid portion 23 via the lid portion discharge port 237. When supplying the cleaning liquid to the shielding plate 51, it is preferable that the substrate holder 31 is also rotated by the substrate rotation mechanism 35, thereby preventing the cleaning liquid from staying on the substrate holder 31. Further, when pure water is supplied as a cleaning liquid from the upper central nozzle 181 to the upper surface of the rotating substrate holding unit 31, the inner surface of the chamber body 22 can be cleaned with the cleaning liquid scattered from the upper surface of the substrate holding unit 31. is there.

  In the chamber lid 23, as described above, the upper surface 235 of the lid bottom surface portion 234 is an inclined surface that goes downward as it goes radially outward, so that the cleaning liquid on the upper surface 235 enters the central lower opening 232. It is prevented from moving toward. In addition, since the cleaning liquid on the upper surface 235 moves radially outward, the cleaning liquid can be quickly discharged from the lid internal space 231. Further, when the inner edge portion of the cup canopy portion 227b and the inner edge portion of the lid bottom surface portion 234 come into contact with each other, the cleaning liquid is prevented from adhering to the lower surface 236 of the lid bottom surface portion 234. Therefore, after the inside of the chamber lid 23 is cleaned, when the substrate 9 to be processed passes through the gap between the lid bottom surface 234 and the cup canopy 227b with the chamber 21 opened, the lid bottom surface 234 The liquid is prevented from dropping from the lower surface 236 to the upper surface 91 of the substrate 9.

  The supply of the cleaning liquid to the shielding plate 51 is continued for a predetermined time and then stopped. Subsequently, the vertical movement of the shielding plate 51 by the first moving mechanism 41 is stopped (step S34). Even after the supply of the cleaning liquid to the shielding plate 51 is stopped, the shielding plate 51 continues to rotate for a predetermined time. Thereby, the cleaning liquid on the upper surface 511 and the lower surface 512 is removed. After the shielding plate 51 is dried, the rotation of the shielding plate 51 by the shielding plate rotation mechanism 55 is also stopped, and the cleaning process inside the chamber lid portion 23 is completed (step S35). In the substrate processing apparatus 1, nitrogen gas is constantly supplied from the plurality of outer lid nozzles 182 of the gas supply unit 812 (see FIG. 5) to the lid internal space 231 (may be stopped when the cleaning liquid is supplied to the shielding plate 51. .) Therefore, the cleaned inner surface of the chamber lid 23 and the scan nozzle 186 are efficiently dried.

  As described above, in the substrate processing apparatus 1, the shielding plate 51 having a larger radial size than the lower opening 232 is provided in the lid internal space 231 of the chamber lid portion 23. Then, before the substrate 9 is carried in and the chamber 21 is formed, the gas supplied from the gas supply unit 812 in the state where the shielding plate 51 closes the lower opening 232 causes the internal space of the lid of the chamber lid 23 to be formed. 231 is filled. Thereby, after formation of the chamber 21, the inside of the chamber 21 can be rapidly made into a desired gas atmosphere. As a result, the time from the formation of the chamber 21 to the start of processing of the substrate 9 in the gas atmosphere can be shortened, and the productivity of the substrate processing apparatus 1 can be improved.

  As described above, when the gas supplied from the gas supply unit 812 is an inert gas such as nitrogen gas, the substrate 9 can be quickly processed with the processing liquid in a low oxygen atmosphere. As a result, the oxidation or the like of the metal film provided on the upper surface 91 of the substrate 9 can be suppressed. Further, immediately after the chamber 21 is formed (at the same time as the chamber 21 is formed), since the substrate 9 is located in the lid internal space 231 filled with gas in advance, the substrate 9 is loaded into the apparatus. The surrounding of the substrate 9 can be quickly made a desired gas atmosphere.

  In the substrate processing apparatus 1, the scan nozzle 186 is disposed at the ejection position and the shielding plate 51 is disposed above the scan nozzle 186 when the processing liquid is supplied from the scan nozzle 186 to the substrate 9 under the control of the control unit 10. Is done. Further, when the scan nozzle 186 is dried during a period in which the processing liquid is not supplied from the scan nozzle 186 to the substrate 9, the scan nozzle 186 is disposed at the standby position, and the lower opening 232 is closed by the shielding plate 51. Therefore, the scan nozzle 186 can be efficiently dried by the gas supplied to the lid internal space 231 that is smaller than the main body internal space 221, and the scan nozzle 186 can be kept clean. Since the size of the lower opening 232 in the radial direction is smaller than that of the lid internal space 231, even if the lower opening 232 is not closed by the shielding plate 51, the scan nozzle is used by the gas supplied to the relatively small lid internal space 231. It is possible to dry 186 to some extent efficiently. Further, the scan nozzle 186 is provided outside the chamber lid portion 23 and outside the chamber 21, and the chamber lid portion 23 is opened to move the scan nozzle 186 above the substrate 9 when supplying the processing liquid to the substrate 9. Compared with the case where an opening for nozzle entry is provided in the chamber lid 23, outside air does not enter the periphery of the substrate 9 when the processing liquid is supplied, and the substrate 9 can be kept in a lower oxygen state.

  The chamber lid portion 23 includes a lid portion discharge port 237 for discharging the liquid in the lid internal space 231 and the pre-dispensing is performed in a state where the scan nozzle 186 is disposed at the standby position. Thereby, in the substrate processing apparatus 1, the liquid receiving structure for pre-dispensing can be omitted. Further, by providing the head rotation mechanism 863 on the upper surface of the chamber lid portion 23, the head support portion 862 in the scan nozzle 186 can be shortened compared to the case where it is provided on the outer surface of the chamber lid portion 23.

  In the substrate processing apparatus 1, the drying process of the substrate 9 is performed in the lid internal space 231 that is different from the main body internal space 221 in which the processing of the substrate 9 with the processing liquid is performed. Further, in the lid internal space 231, the cleaning liquid is supplied to the upper surface 511 of the rotating shielding plate 51, and the cleaning liquid is scattered from the upper surface 511 of the shielding plate 51 to the inner surface of the chamber lid portion 23 by centrifugal force. Thus, the inner surface and the like of the chamber lid portion 23 can be easily cleaned. As a result, the lid internal space 231 for drying the substrate 9 can be kept extremely clean. Further, since the chamber space including the lid internal space 231 is sealed, the mist of the cleaning liquid is prevented from being scattered outside (outside the chamber 21). Further, when the inside of the chamber lid 23 is cleaned, the shielding plate 51 moves in the vertical direction relative to the chamber lid 23 in the lid internal space 231, thereby widening the inner surface of the chamber lid 23. Can be washed.

  In the substrate processing apparatus 1 in which the scan nozzle 186 is provided in the lid internal space 231, when the cleaning liquid is supplied to the upper surface 511 of the shielding plate 51, the cleaning liquid is located at the standby position from the upper surface 511 of the shielding plate 51. It also scatters to the nozzle 186. As a result, the scan nozzle 186 can be easily cleaned, and the scan nozzle 186 can be kept clean. Further, the gas is supplied to the lid internal space 231 by the gas supply unit 812, and the gas in the lid internal space 231 is discharged by the lid exhaust unit 198. Thereby, drying of the inner surface of the chamber lid 23 and drying of the scan nozzle 186 can be performed efficiently, and the dropping of the cleaning liquid onto the substrate 9 can be suppressed.

  In the substrate processing apparatus 1, the inside of the chamber lid portion 23 can be cleaned in parallel with the processing of the substrate 9 by the processing liquid. For example, in the state shown in FIG. 7, the cleaning liquid is supplied from the plurality of inner lid nozzles 189 to the upper surface 511 of the rotating shielding plate 51 in parallel with the processing of steps S <b> 17 and S <b> 18 for supplying the processing liquid to the substrate 9. In other words, while the cleaning liquid is supplied to the upper surface 511 of the shielding plate 51, the processing liquid is supplied from the processing liquid supply unit 811 to the upper surface 91 of the substrate 9 disposed in the main body internal space 221. Thereby, the inner surface of the chamber lid 23 can be cleaned during the processing of the substrate 9 with the processing liquid, and the throughput of the substrate processing in the substrate processing apparatus 1 can be improved.

  The substrate processing apparatus 1 can be variously modified.

  The chemical solution may be discharged from the upper center nozzle 181 and pure water may be discharged from the scan nozzle 186. In this case, when the chemical solution is discharged from the upper central nozzle 181, the chemical solution scattered from the upper surface 91 of the substrate 9 is prevented from adhering to the scan nozzle 186 due to the shielding plate 51 approaching the lower opening 232. Further, both the chemical solution supply unit 813 and the pure water supply unit 814 may be connected to the upper central nozzle 181 (or the scan nozzle 186) via valves, and the chemical solution and pure water may be selectively discharged from the upper central nozzle 181. .

  Depending on the design of the substrate processing apparatus 1, a plurality of scan nozzles that discharge different types of processing liquids may be provided in the lid internal space 231. In this case, a plurality of pods that respectively collect the chemicals from the plurality of scan nozzles may be provided on the upper surface 235 of the lid bottom surface portion 234. A plurality of scan nozzles perform pre-dispensing in individual pods, so that it is possible to easily collect the chemical solutions individually.

  In the above embodiment, the head rotation mechanism 863 that rotates the scan nozzle 186 is provided in the chamber lid 23, but the head rotation mechanism 863 may be provided outside the housing 11, for example, on the upper surface of the housing 11. . In this case, the head rotation mechanism 863 can be kept away from the atmosphere such as a chemical solution, and the head rotation mechanism 863 can be used for a long period of time.

  In addition, depending on the design of the substrate processing apparatus 1, the discharge unit that discharges the processing liquid may have a form other than the cantilever scan nozzle. Further, the ejection unit moving mechanism that selectively arranges the ejection unit at the ejection position and the standby position may be a mechanism that linearly moves the ejection unit.

  Depending on the type of treatment for the substrate 9, the treatment liquid supply unit 811 may supply droplets or vapor of the treatment liquid to the upper surface 91 of the substrate 9.

  In the example shown in FIG. 1, the chamber opening / closing mechanism includes a second moving mechanism 42 that moves the chamber lid portion 23 and a third moving mechanism 43 that moves the cup portion 225 of the chamber body 22. One of the second moving mechanism 42 and the third moving mechanism 43 may be omitted, and only the other may be used as the chamber opening / closing mechanism. Further, in the example shown in FIG. 1, the shielding plate moving mechanism includes a first moving mechanism 41 that moves the shielding plate 51 and a second moving mechanism 42 that moves the chamber lid 23. One of the second moving mechanisms 42 may be omitted, and only the other may be used as the shielding plate moving mechanism.

  In the example shown in FIG. 1, the above-described substrate moving mechanism includes a second moving mechanism 42 that moves the chamber lid portion 23 and a third moving mechanism 43 that moves the cup portion 225 of the chamber body 22. The mechanism may be, for example, a mechanism that moves the substrate holding unit 31 in the vertical direction in the chamber 21.

  In the chamber body 22, a plurality of cups arranged concentrically may be provided as the cup portion 225. In this case, when the type of the processing liquid supplied onto the substrate 9 is switched, it is preferable that the cup that receives the processing liquid from the substrate 9 is also switched. Thereby, when a plurality of types of processing liquids are used, the plurality of processing liquids can be easily separated and collected or discarded.

  As shown in FIG. 10, a chamber 21 a formed as a member in which the chamber lid portion 23 and the cup portion 225 of the chamber body 22 are connected may be employed. Also in the substrate processing apparatus 1a of FIG. 10, the upper opening 222 of the chamber body 22 is covered with the chamber lid 23 to form the chamber 21a. In the chamber 21a, a side opening 239 is provided in the chamber lid 23, and the substrate 9 passes through the side opening 239 when the substrate 9 is carried into and out of the chamber 21a. The side opening 239 is opened and closed by a side opening opening / closing mechanism 39. In the substrate processing apparatus 1a of FIG. 10, the third moving mechanism 43 in the substrate processing apparatus 1 of FIG. 1 is omitted, and the chamber cover part 23 and the cup part 225 are moved up and down by the second moving mechanism. Accordingly, the substrate 9 is selectively disposed in the lid internal space 231 and the main body internal space 221. Also in the substrate processing apparatus 1a, the processing with the processing liquid is performed when the substrate 9 is disposed in the main body internal space 221, and the drying process of the substrate 9 is performed when the substrate 9 is disposed in the lid internal space 231. The process of cleaning the inside of the chamber lid 23 is the same as that of the substrate processing apparatus 1.

  In the substrate processing apparatuses 1 and 1a, various substrates other than the semiconductor substrate may be processed. In addition to polymer removal and etching, various liquid treatments that are desirably performed in a low-oxygen environment can be performed using various liquids such as hydrochloric acid and hydrofluoric acid. The gas for realizing the low oxygen state is not limited to nitrogen gas, but may be other inert gas such as argon, or other desired gas atmosphere, for example, a gas in which a plurality of types of gas composition ratios are controlled. Also good.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1,1a Substrate processing apparatus 9 Substrate 10 Control part 21,21a Chamber 22 Chamber main body 23 Chamber lid part 31 Substrate holding part 35 Substrate rotation mechanism 41 First movement mechanism 42 Second movement mechanism 43 Third movement mechanism 51 Shielding plate 55 Shielding Plate rotation mechanism 91 Upper surface of substrate 186 Scan nozzle 198 Lid exhaust part 221 Main body internal space 222 Upper opening 231 Lid internal space 232 Lower opening 233 Lid main body part 234 Lid bottom part 235 Upper surface 237 Lid part discharge Port 511 Upper surface of shielding plate 512 Lower surface of shielding plate 810 Cleaning liquid supply unit 811 Processing liquid supply unit 812 Gas supply unit 861 Discharge head 862 Head support unit 863 Head rotation mechanism J1 Central axis S11 to S22, S31 to S35 Step

Claims (8)

A substrate processing apparatus for processing a substrate,
A chamber lid portion having a lower opening and forming a lid inner space having a larger radial size than the lower opening;
A chamber body that forms a main body internal space and has an upper opening that is vertically opposite to the lower opening, and the upper opening is covered by the chamber lid, thereby forming a chamber together with the chamber lid;
A substrate holding unit for holding the substrate in a horizontal state in the chamber;
A discharge unit disposed in the lid internal space and for discharging a processing liquid toward the upper surface of the substrate;
A discharge unit moving mechanism that selectively disposes the discharge unit at a discharge position above the lower opening and a standby position separated from the lower opening in the radial direction in the lid internal space;
A gas supply unit for supplying gas to the lid internal space;
An exhaust part for discharging the gas in the lid internal space;
By controlling the ejection unit moving mechanism, the ejection unit is disposed at the ejection position when the treatment liquid is supplied from the ejection unit to the substrate, and the treatment liquid is not supplied from the ejection unit to the substrate. A controller that positions the discharge unit at the standby position when the discharge unit is dried in a period;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
A shielding plate disposed in the inner space of the lid and facing the upper surface of the substrate;
A shielding plate moving mechanism for moving the shielding plate in the vertical direction relative to the chamber lid in the lid internal space;
Further comprising
The control unit controls the shielding plate moving mechanism to arrange the shielding plate above the ejection unit when supplying the processing liquid from the ejection unit to the substrate, and from the ejection unit to the substrate. A substrate processing apparatus, wherein the lower opening is closed by the shielding plate when the discharge unit is dried during a period when the processing liquid is not supplied. The substrate processing apparatus according to claim 1, wherein:
The chamber lid includes a discharge port for discharging the liquid in the lid internal space;
A substrate processing apparatus, wherein pre-dispensing is performed in a state where the discharge unit is disposed at the standby position. The substrate processing apparatus according to claim 3, wherein
The chamber lid is
A cup-shaped lid body that is upside down,
An annular lid bottom surface portion that extends inward in the radial direction from the lower end portion of the lid main body portion and is provided with the lower opening at the center portion;
Further comprising
The upper surface of the bottom surface of the lid is directed downward as it goes outward in the radial direction,
The substrate processing apparatus, wherein the discharge port is provided in a connection portion between the lid bottom surface portion of the chamber lid portion and the lid main body portion. The substrate processing apparatus according to claim 1, wherein:
The discharge part is
A discharge head for discharging the treatment liquid;
A head extending in a horizontal direction, wherein the discharge head is fixed to a free end, and a fixed end is attached to the chamber lid in the lid internal space;
With
The substrate processing apparatus, wherein the discharge unit moving mechanism includes a head rotation mechanism that rotates the discharge head together with the head support unit around the fixed end. The substrate processing apparatus according to claim 5,
The substrate processing apparatus, wherein the head rotation mechanism is provided on an upper surface of the chamber lid. A substrate processing apparatus according to any one of claims 1 to 6,
The chamber lid is moved relative to the chamber body in the up-down direction, and the upper opening of the chamber body is covered with the chamber lid to form the chamber in which the substrate is disposed. A substrate processing apparatus, further comprising a chamber opening / closing mechanism. The substrate processing apparatus according to claim 7,
Before the chamber is formed, a gas is supplied to the lid inner space by the gas supply unit, and the lid inner space is filled with the gas.

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