TWI819441B - Package substrate, chip package and integrated circuit chip - Google Patents
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本發明是有關於一種封裝基板,且特別是有關於一種封裝基板、應用此封裝基板的晶片封裝體以及對應安裝在此封裝基板上的積體電路晶片。The present invention relates to a packaging substrate, and in particular to a packaging substrate, a chip package using the packaging substrate, and a corresponding integrated circuit chip mounted on the packaging substrate.
在積體電路(Integrated Circuit,簡稱IC)設計領域中,雙倍資料率同步動態隨機存取記憶體(Double Data Rate Synchronous Dynamic Random Access Memory,以下簡稱DDR)是一種IC晶片(Chip)。用於DDR的多個通道(Channel)所分屬的多個位元組區排通常會排列在IC晶片的主動面(active surface)上。因此,當這些位元組區排的數量增加時,需要優化這些位元組區排在IC晶片的主動面上的排列,以提高IC晶片的面積利用率。In the field of integrated circuit (IC) design, Double Data Rate Synchronous Dynamic Random Access Memory (DDR) is an IC chip (Chip). Multiple byte blocks to which multiple channels (Channels) for DDR belong are usually arranged on the active surface of the IC chip. Therefore, when the number of these byte area rows increases, it is necessary to optimize the arrangement of these byte area rows on the active surface of the IC chip to improve the area utilization of the IC chip.
本發明提供一種封裝基板,用於安裝積體電路晶片,以提高積體電路晶片的面積利用率。The invention provides a packaging substrate for mounting integrated circuit chips to improve the area utilization of the integrated circuit chips.
本發明提供一種晶片封裝體,用於封裝積體電路晶片,以提高積體電路晶片的面積利用率。The invention provides a chip package for packaging integrated circuit chips to improve the area utilization of the integrated circuit chips.
本發明提供一種積體電路晶片,以提高積體電路晶片的面積利用率。The invention provides an integrated circuit chip to improve the area utilization rate of the integrated circuit chip.
本發明的封裝基板適於以覆晶接合方式安裝一積體電路晶片,並具有一基板面及位在基板面的一晶片區。封裝基板包括多個線路層、多個導電孔道及多個位元組區排。這些線路層依序間隔地配置在基板面的下方。這些線路層的每一個具有多個走線。這些導電孔道的每一個連接這些線路層的至少二個。這些位元組區排從晶片區的邊緣朝向晶片區的中央依序並排。這些位元組區排的每一個包括多個排成一排的位元組區,這些位元組區的每一個包括多個接墊,且這些接墊由最靠近基板面的線路層所構成。越靠近晶片區的邊緣的位元組區排的這些位元組區的這些接墊經由越靠近基板面的線路層的這些走線從晶片區的正下方延伸至晶片區外的正下方。The packaging substrate of the present invention is suitable for mounting an integrated circuit chip in a flip-chip bonding manner, and has a substrate surface and a chip area located on the substrate surface. The packaging substrate includes multiple circuit layers, multiple conductive vias and multiple bit arrays. These circuit layers are arranged at intervals below the substrate surface. Each of these wiring layers has multiple traces. Each of the conductive vias connects at least two of the circuit layers. These bit group rows are arranged side by side in sequence from the edge of the chip area toward the center of the chip area. Each of these byte area rows includes a plurality of byte areas arranged in a row. Each of these byte areas includes a plurality of pads, and these pads are formed by the circuit layer closest to the substrate surface. . The pads of the bit group areas of the bit group area rows closer to the edge of the chip area extend from just below the chip area to just below outside the chip area through the traces of the circuit layer closer to the substrate surface.
本發明的晶片封裝體包括上述之封裝基板及一積體電路晶片。積體電路晶片以覆晶接合方式安裝在封裝基板的晶片區。The chip package of the present invention includes the above-mentioned packaging substrate and an integrated circuit chip. The integrated circuit chip is mounted on the chip area of the packaging substrate through flip-chip bonding.
本發明的積體電路晶片適於以覆晶接合方式安裝在上述之封裝基板的晶片區。The integrated circuit chip of the present invention is suitable for being mounted on the chip area of the above-mentioned packaging substrate by flip-chip bonding.
基於上述,在本發明中,越靠近晶片區的邊緣的位元組區排的這些位元組區的這些接墊是經由越靠近基板面的線路層的這些走線從晶片區的正下方延伸至晶片區外的正下方。因此,可以提高位元組區排的並排數量。Based on the above, in the present invention, the pads of the bit group areas of the bit group area rows closer to the edge of the chip area extend from directly below the chip area through the traces of the circuit layer closer to the substrate surface. to just below outside the wafer area. Therefore, the number of side-by-side rows of byte blocks can be increased.
請參考圖1A及圖1B,在本實施例中,晶片封裝體50包括一晶片52(即積體電路晶片52)及一封裝基板100。晶片52適於以覆晶接合方式安裝在封裝基板100上。具體而言,晶片52具有一主動面52a及位在主動面52a上的多個晶片墊52b,而封裝基板100具有一基板面100a、位在基板面100a上的一晶片區100b及位在晶片區100b的多個接墊p(亦可見於圖2的接墊p)。晶片52的這些晶片墊52b可經由多個導電凸塊54安裝至位在晶片區100b的這些接墊p。在本實施例中,位於晶片52下方投影區域的這些接墊p,其訊號分佈與晶片52的主動面52a上的這些晶片墊52b呈現鏡像關係。Please refer to FIGS. 1A and 1B . In this embodiment, the
請參考圖1B及圖2至圖7,在本實施例中,圖1B的封裝基板100包括多個線路層110(亦可見於圖3的線路層100(L1-L9))及多個導電孔道120(conductive via)。圖5、圖6和圖7分別是圖3的第一線路層110(L1)、第二線路層110(L2)和第四線路層110(L4)的平面示意圖。這些線路層110依序間隔地配置在基板面100a的下方。這些線路層110的每一個具有多個走線t(如圖2所示,亦可見於圖6與圖7)。這些導電孔道120的每一個連接這些線路層110的至少二個。換言之,這些線路層110的任二個可經由這些導電通孔120彼此電連接。Please refer to FIG. 1B and FIG. 2 to FIG. 7 . In this embodiment, the
在本實施例中,在DDR或類似的並行訊號的應用下,封裝基板100包括多個位元組區排。在圖2中,以三個位元組區排r1、r2、r3為例,而在圖3至圖7中,以四個位元組區排r1、r2、r3、r4為例。圖2為封裝基板100的晶片區100b的底側附近的局部俯視圖,其由多個線路層110所構成,由圖2可知,在一正投影面上,這些位元組區排r1、r2、r3從晶片區100b的邊緣朝向晶片區100b的中央依序並排。這裡所述的並排是指這些位元組區排r1、r2、r3是以其長度方向彼此平行的方式依序相鄰地排列。換言之,這些位元組區排r1、r2、r3全都排列在第一方向(例如: Y方向)上。因此,可以減少第二方向(例如: X方向)上的邊緣長度,且對應於晶片52的第二方向(例如: X方向)上的邊緣長度也可以減少。這些位元組區排r1、r2、r3的每一個(例如r1或r2或r3)包括多個排成一排的位元組區B。換言之,在第二方向(例如: X方向)上,排在同一排的這些位元組區B構成同一個位元組區排(例如r1或r2或r3),其支援同一通道的訊號傳遞。另外,對應於晶片52的每一個位元組區排,其晶片墊52b的排列方式為彼此相同,或是為鏡像排列。例如: 構成位元組區排r1的晶片墊52b和構成位元組區排r2的晶片墊52b的排列方式相同。或者,構成位元組區排r1的晶片墊52b和構成位元組區排r2的晶片墊52b的排列方式沿著一對稱線具有鏡像關係。In this embodiment, under the application of DDR or similar parallel signals, the
為了便於簡化圖形,在圖2 中,同一個位元組區排的這些位元組區B的數量以二個為例,在圖4至圖7中,同一個位元組區排的這些位元組區B的數量以四個為例,但不以這些數量為限。這些位元組區B的每一個包括多個接墊p(即圖1B中連接導電凸塊54的接墊p)。這些接墊p的排列方式可以平行排列(如圖2所示)或交錯排列(未繪示)。這些接墊p由最靠近基板面100a的線路層110(即圖3之線路層110(L1))所構成。In order to simplify the diagram, in Figure 2, the number of these byte areas B in the same byte area row is two as an example. In Figures 4 to 7, these bits in the same byte area row are The number of tuple areas B is four, but is not limited to these numbers. Each of these byte areas B includes a plurality of pads p (ie, the pads p connected to the
在本實施例中,越靠近晶片區100b的邊緣的位元組區排r的這些位元組區B的這些接墊p經由越靠近基板面100a的線路層110的這些走線t從晶片區100b的正下方延伸至晶片區100b外的正下方。例如:如圖6的第二線路層110(L2)所示,靠近晶片區100b的邊緣的位元組區排r1的這些位元組區B的這些接墊p經由靠近基板面100a的線路層110(L2)的這些走線t2從晶片區100b的正下方延伸至晶片區100b外的正下方。另一方面,越遠離晶片區100b的邊緣的位元組區排r的這些位元組區B的這些接墊p經由越遠離基板面100a的線路層110的這些走線t從晶片區100b的正下方延伸至晶片區100b外的正下方。例如:如圖7的第四線路層110(L4)所示,遠離晶片區100b的邊緣的位元組區排r2的這些位元組區B的這些接墊p經由遠離基板面100a的線路層110(L4)的這些走線t4從晶片區100b的正下方延伸至晶片區100b外的正下方。In this embodiment, the pads p of the bit group areas B closer to the bit group area row r at the edge of the
在本實施例中,在DDR或類似的並行訊號的應用下,在這些線路層100中,包含訊號傳遞的線路層與提供電源/接地的線路層,兩線路層之間以導電孔道120電性連接。而且,以訊號傳遞功能為主的線路層(L2、L4、L6及L8)可分別位於以電源/接地功能為主的兩線路層(L1及L3、L3及L5、L5及L7或L7及L9)之間。在一未繪示的實施例中,以電源/接地功能為主的線路層(L2、L4、L6及L8)可分別位於以訊號傳遞功能為主的兩線路層(L1及L3、L3及L5、L5及L7或L7及L9)之間。由圖3至圖7可知,在本實施例中,假設有四個位元組區排r1、r2、r3、r4在第一方向(例如:圖2的Y方向)上由靠近晶片區100b的邊緣逐漸往遠離晶片區100的方式排列,這些位元組區排r1、r2、r3、r4中的接墊p將分別透過基板面100a的線路層110(L2、L4、L6、L8) 的這些走線t從晶片區100b的正下方延伸至晶片區100b外的正下方,其中線路層110(L2)、線路層110(L4)、線路層110(L6)、線路層110(L8)逐漸遠離基板面100a。雖然圖式僅繪示線路層110(L2)及線路層110(L4),但是可以推論位元組區排r3也會在線路層110(L6)配置走線,以將訊號由晶片區100b的正下方延伸至晶片區100b外的正下方,這未繪示在圖式中。另外,位元組區排r4會在線路層110(L8)配置走線,以將訊號由晶片區100b的正下方延伸至晶片區100b外的正下方,這亦未繪示在圖式中。In this embodiment, under the application of DDR or similar parallel signals, these circuit layers 100 include a circuit layer for signal transmission and a circuit layer for providing power/ground, and
由上可知,相較於已知技術會將多個位元組區排r,接續排列在晶片或是封裝基板的X方向,本發明會將多個位元組排r以其長度方向彼此平行的方式依序相鄰地排列,如此可以減少晶片或是封裝基板的在X方向的邊緣長度。另外,本發明的多個位元組排r是以其寬度沿著晶片或是封裝基板的Y方向接續排列,所以多個位元組排也不會造成晶片或是封裝基板的Y方向的邊緣長度過長的問題。特別是,在晶片52的主動面52a上的多個晶片墊52b,其所對應的這些位元組區排r1、r2、r3、r4從晶片區100b的邊緣朝向晶片區100b的中央依序並排,因此,可以減少晶片52在第二方向(例如: X方向)上的邊緣長度。It can be seen from the above that compared with the known technology that arranges multiple byte areas r in succession in the X direction of the chip or packaging substrate, the present invention arranges the multiple byte areas r with their length directions parallel to each other. are arranged adjacently in sequence, which can reduce the edge length of the chip or packaging substrate in the X direction. In addition, the multiple byte rows r of the present invention are continuously arranged along the Y direction of the chip or the packaging substrate with their widths, so the multiple byte rows will not cause edges in the Y direction of the chip or the packaging substrate. Too long issue. In particular, the plurality of
請再參考圖2,在本實施例中,Pmin表示(凸塊)兩個接墊p的最小間距。W表示功能單元(function unit)(即位元組區B)的寬度。H表示功能單元(即位元組區B)的高度。D表示(凸塊54)接墊p的外徑。G表示功能單元(即兩個位元組區B)的相鄰邊緣的兩個(凸塊54)接墊p的間距。T1表示訊號走線t在晶片區100b內的寬度。S1表示兩個的訊號走線t的間距。T2表示訊號走線t在晶片區100b外的寬度。Lmax表示訊號走線t在晶片區100b內的最大長度。n1表示在兩個(凸塊54)接墊p之間的訊號走線t的數量。n2表示在兩個功能單元(即位元組區B)之間的訊號走線t數量。Please refer to Figure 2 again. In this embodiment, Pmin represents the minimum distance between two pads (bumps) p. W represents the width of the function unit (ie, byte area B). H represents the height of the functional unit (ie, byte area B). D represents the outer diameter of the pad p (bump 54). G represents the spacing between two (bump 54) pads p on adjacent edges of the functional unit (ie, the two byte areas B). T1 represents the width of the signal trace t in the
在本實施例中,Pmin = n1T1 + (n1+1)S1 + D。換句話說,屬於單一位元組區排(例如:圖2中的r1)的這些位元組區B的一個的這些接墊p的相鄰二個之間的最小間距Pmin等於位在這些相鄰接墊p之間的這些走線t的數量n1乘以走線t在晶片區100b正下方的部分的寬度T1、這些相鄰接墊p之間的這些走線t的數量加一後乘以這些走線t的間距S1、這些接墊p的任一個的外徑D的總和。In this embodiment, Pmin = n1T1 + (n1+1)S1 + D. In other words, the minimum distance Pmin between two adjacent pads p of one of the byte areas B belonging to a single byte area row (for example: r1 in Figure 2) is equal to the minimum distance Pmin between the two adjacent pads p located in these phases. The number n1 of these traces t between adjacent pads p is multiplied by the width T1 of the portion of trace t directly below the
在本實施例中,G = n2T1 + (n2+1)S1 + D。換句話說,屬於單一位元組區排(例如:圖2中的r3)的這些位元組區B的相鄰二個之間的最小間距等於位在這些相鄰位元組區B之間的這些走線t的數量n2乘以走線t在晶片區100b正下方的部分的寬度、這些相鄰位元組區B之間的這些走線t的數量n2加一後乘以這些走線t的間距、這些接墊p的任一個的外徑D的總和。In this embodiment, G = n2T1 + (n2+1)S1 + D. In other words, the minimum distance between two adjacent byte areas B belonging to a single byte area row (for example: r3 in Figure 2) is equal to the distance between these adjacent byte areas B. The number n2 of these traces t is multiplied by the width of the part of the trace t directly below the
在本實施例中,S1 ≧ 2×T1。換句話說,這些走線t的相鄰的二個之間的間距S1大於等於晶片區100b內的這些走線t的線寬T1的兩倍。In this embodiment, S1 ≧ 2×T1. In other words, the spacing S1 between two adjacent traces t is greater than or equal to twice the line width T1 of the traces t in the
在本實施例中,T1 的較細的走線t阻抗(trace impedance)等於T2的較粗的走線t阻抗± 30%。換句話說,這些較細走線t的每一個在晶片區100b內的正下方的部分的阻抗為較粗走線t在晶片區100b外的正下方的部分的阻抗的0.7至1.3倍。晶片區內外的走線阻抗與走線寬度有關。In this embodiment, the thinner trace t-impedance (trace impedance) of T1 is equal to the thicker trace t-impedance of T2 ± 30%. In other words, the impedance of the portion directly below each of these thinner traces t within the
在本實施例中,Lmax大於2公釐(mm)。換句話說,以圖2的r3為例,這些走線t的每一個在晶片區100b內的正下方的部分的距離大於2公釐。In this embodiment, Lmax is greater than 2 millimeters (mm). In other words, taking r3 in FIG. 2 as an example, the distance directly below each of these traces t in the
在本實施例中,G大於Pmin。換句話說,屬於單一位元組區排(例如:圖2的r3)的這些位元組區B的一個的這些接墊p之一與屬於相同單一位元組區排(例如:圖2的r3)這些位元組區B的這些接墊p的最相鄰的之間的距離大於屬於單一位元組區排(例如:圖2的r3)的這些位元組區B的一個的這些接墊p的相鄰二個之間的最小間距Pmin。In this embodiment, G is greater than Pmin. In other words, one of the pads p belonging to one of the byte areas B of a single byte area row (for example: r3 of FIG. 2) is the same as one of the pads p belonging to the same single byte area row (for example: r3 of FIG. 2). r3) The distance between the nearest adjacent pads p of the byte areas B is greater than the distance between the closest ones of the pads p of the byte areas B belonging to a single byte area row (for example: r3 in Figure 2). The minimum distance Pmin between two adjacent pads p.
在本實施例中,W≦4×Pmin。換句話說,這些位元組區B的每一個位於一位元組區B內,且位元組區B的寬度小於等於位元組區B的這些接墊p的相鄰二個之間的最小間距Pmin的四倍。In this embodiment, W≦4×Pmin. In other words, each of these byte areas B is located within the byte area B, and the width of the byte area B is less than or equal to the width between two adjacent pads p of the byte area B. Four times the minimum spacing Pmin.
在本實施例中,較遠離晶片區100b的邊緣的這些位元組區排(例如:相對於r1的 r2、r3、r4)的這些接墊p所連接的這些走線t在基板面100a上的正投影與較接近晶片區100b的邊緣的這些位元組區排(例如:r1)的這些接墊p在基板面100a上的正投影重疊。在一些實施例中,不同的位元組區排的這些接墊p所連接的這些走線t在基板面100a上的正投影未完全重疊。In this embodiment, the traces t connected to the pads p of the bit group rows farther away from the edge of the
請參考圖8,在本實施例中,封裝基板100包括多個位元組區排r1、r2、r3。這些位元組區排r1、r2、r3從晶片區100b的一邊緣朝向晶片區100b的中央依序並排。此外,封裝基板100更包括多個位元組區排r4、r5、r6。這些位元組區排r4、r5、r6從晶片區100b的另一邊緣朝向晶片區100b的中央依序並排。相較於已知技術會將多個位元組區排r,接續排列在晶片或是封裝基板的X方向,本發明會將多個位元組排r以其長度方向彼此平行的方式依序相鄰地排列,如此可以減少晶片或是封裝基板的在X方向的邊緣長度。另外,本發明的多個位元組排r是以其寬度沿著晶片或是封裝基板的Y方向接續排列,所以多個位元組排也不會造成晶片或是封裝基板的Y方向的邊緣長度過長的問題。Please refer to FIG. 8 . In this embodiment, the
請參考圖9,在本實施例中,封裝基板100包括多個位元組區排r1、r2、r3、r4。這些位元組區排r1、r2、r3、r4從晶片區100b的一邊緣朝向晶片區100b的中央依序並排。此外,封裝基板100更包括多個位元組區排r5、r6、r7、r8。這些位元組區排r5、r6、r7、r8從晶片區100b的另一邊緣朝向晶片區100b的中央依序並排。相較於已知技術會將多個位元組區排r,接續排列在晶片或是封裝基板的X方向,本發明會將多個位元組排r以其長度方向彼此平行的方式依序相鄰地排列,如此可以減少晶片或是封裝基板的在X方向的邊緣長度。另外,本發明的多個位元組排r是以其寬度沿著晶片或是封裝基板的Y方向接續排列,所以多個位元組排也不會造成晶片或是封裝基板的Y方向的邊緣長度過長的問題。Please refer to FIG. 9 . In this embodiment, the
綜上所述,在本發明中,除了多個位元組區排的排列方式之外,越靠近晶片區的邊緣的位元組區排的這些位元組區的這些接墊是經由越靠近基板面的線路層的這些走線從晶片區的正下方延伸至晶片區外的正下方。因此,可以提高位元組區排的並排數量,且減少晶片的主動面的邊緣的所需長度,以提高積體電路晶片的面積利用率,避免晶片尺寸過大。To sum up, in the present invention, in addition to the arrangement of multiple byte area rows, the pads of the bit area rows closer to the edge of the chip area are connected via the closer These traces of the circuit layer on the substrate surface extend from directly below the chip area to directly below outside the chip area. Therefore, the number of side-by-side bit group rows can be increased, and the required length of the edge of the active surface of the chip can be reduced, thereby improving the area utilization of the integrated circuit chip and preventing the chip from being too large.
50:晶片封裝體
52:晶片
52a:主動面
52b:晶片墊
54:導電凸塊
100:封裝基板
100a:基板面
100b:晶片區
110:線路層
120:導電孔道
B:位元組區
p:接墊
r1、r2、r3、r3、r5、r6、r7、r8:位元組區排(r)
t、t2、t4:走線
D:外徑
G:間距
H:高度
Pmin:最小間距
Lmax:最大長度
S1:間距
T1:寬度
T2:寬度
W:寬度
50: Chip package
52:
圖1A及圖1B分別是本發明的一實施例的一種晶片封裝體的俯視圖及側視圖。 圖2是圖1A的封裝基板的晶片區底側附近的局部俯視圖。 圖3是圖1A的封裝基板的多個位元組區及多個線路層的立體示意圖。 圖4是圖3的多個位元組區的平面示意圖。 圖5是圖3的第一線路層100(L1)的平面示意圖。 圖6是圖3的第二線路層100(L2)的平面示意圖。 圖7是圖3的第四線路層100(L4)的平面示意圖。 圖8是本發明的另一實施例的一種晶片封裝體的俯視圖。 圖9是本發明的又一實施例的一種晶片封裝體的俯視圖。 1A and 1B are respectively a top view and a side view of a chip package according to an embodiment of the present invention. FIG. 2 is a partial top view of the package substrate of FIG. 1A near the bottom side of the chip area. FIG. 3 is a schematic perspective view of multiple byte areas and multiple circuit layers of the packaging substrate of FIG. 1A . FIG. 4 is a schematic plan view of multiple byte areas of FIG. 3 . FIG. 5 is a schematic plan view of the first circuit layer 100 (L1) of FIG. 3 . FIG. 6 is a schematic plan view of the second circuit layer 100 (L2) of FIG. 3 . FIG. 7 is a schematic plan view of the fourth circuit layer 100 (L4) of FIG. 3 . FIG. 8 is a top view of a chip package according to another embodiment of the present invention. FIG. 9 is a top view of a chip package according to yet another embodiment of the present invention.
100b:晶片區 100b: Chip area
B:位元組區 B: Byte area
p:接墊 p:pad
r1、r2、r3:位元組區排 r1, r2, r3: Byte area arrangement
t:走線 t: trace
D:外徑 D:Outer diameter
G:間距 G: spacing
H:高度 H: height
Pmin:最小間距 Pmin: minimum spacing
Lmax:最大長度 Lmax: maximum length
S1:間距 S1: spacing
T1:寬度 T1:width
T2:寬度 T2:Width
W:寬度 W: Width
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TW202044496A (en) * | 2019-05-15 | 2020-12-01 | 聯發科技股份有限公司 | Electronic package |
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