以下，參照附圖，說明本發明的較佳的實施形態。此外，在各圖中，對同一構件附加同一參照編號，省略重複的說明。
圖1是示出作為本發明的一個側面的曝光裝置100的結構的概略圖。曝光裝置100是使用包含複數波長域的光對基板進行曝光，向基板轉印圖案的光蝕刻裝置。曝光裝置100被使用於平面顯示器、液晶顯示元件、半導體元件、MEMS等的製造，特別作為平面顯示器曝光裝置適合。曝光裝置100具有：照明光學系統10，用來自光源的光對作為被照明面的遮罩(原版)9進行照明；投影光學系統11，將形成於遮罩9的圖案的像投影到配置於與遮罩9在光學共軛的位置的基板12；以及載置台38。
在本實施形態中，投影光學系統11是包括鏡32、34以及36，按照鏡32、34、36、34、32的順序對光進行反射的反射光學系統，將遮罩9的圖案的像等倍地投影到基板12。投影光學系統11是來自光源的光的色像差比折射光學系統還小的反射光學系統，所以在使用包含複數波長域的寬頻帶的光(寬頻照明光)的情況下適合。載置台38是能夠保持基板12而移動的載置台。
＜第1實施形態＞
圖2是用於說明本實施形態中的照明光學系統10的結構的圖。但是，在圖2中，將投影光學系統11簡化圖示。照明光學系統10如圖2所示，包括集光鏡2、集束透鏡5、複眼透鏡7、集束透鏡8、以及開口光圈61。此外，在從集束透鏡5至遮罩9的光路中，配置有以使光的剖面成為預定的形狀以及預定的大小的光的方式對來自光源1的光進行整形的光學系統(未圖示)。
光源1是射出寬頻帶的光(複數波長的光混合存在的光)的光源。光源1在本實施形態中，包括射出紫外光的汞燈，射出複數峰值波長的亮線(i線(365nm)、g線(405nm)、h線(436nm))混合存在的光。光源1在集光鏡2的第1焦點3的附近包括發光部，集光鏡2將從光源1射出的光聚光於第2焦點4。
集束透鏡5將聚光於第1焦點4的光整形成平行光。由集束透鏡5整形後的光入射到複眼透鏡7的入射面7a。複眼透鏡7是由複數光學元件、具體而言複數微小的透鏡構成的光學積分器。複眼透鏡7從入射到入射面7a(光入射面)的光在射出面7b(光射出面)形成2次光源。從複眼透鏡7射出的光經由複數集束透鏡8，對遮罩9重疊地進行照明。
在載置台38中，配置有測量部(未圖示)。上述測量部包括能夠測量形成於複眼透鏡7的射出面7b的2次光源的形狀、光強度的感測器，例如CCD感測器。
作為超解析技術(RET)之一的環形照明(環形形狀的分佈)、四極照明等變形照明(斜入射照明)對解析度的提高是有效的。具有預定的發光區域(強度分佈)的變形照明能夠藉由配置於與照明光學系統10的瞳面相當的複眼透鏡7(光學積分器)的射出面7b的開口光圈61實現。
在此，將遮罩9的圖案的間距(圖案的反復的週期)設為P，將對上述遮罩9進行照明的光的波長(曝光波長)設為λ，將投影光學系統11的數值孔徑設為NA。在該情況下，藉由用包括包含由以下的式(1)規定的照明角度σ
c的發光區域I的變形照明對遮罩9進行照明，能夠抑制與散焦相伴的像對比度的降低。
在式(1)中，照明角度σ
c在用設定於照明光學系統10的瞳面的瞳座標表示的情況下，與從原點的距離(瞳半徑)相當。
在從前的變形照明中，例如，在半導體曝光裝置的情況下，從光源射出的光的光譜窄，所以波長λ被用作單一的值。另一方面，在平面顯示器曝光裝置中，使用從光源射出的光的光譜寬的寬頻照明。但是，在先前技術中，即便是平面顯示器曝光裝置，也與半導體曝光裝置同樣地，針對單一的波長λ(例如強度最大的波長、進行強度的加權後的重心波長)，決定變形照明的發光區域。
在本實施形態中，藉由針對包含於寬頻照明的不同的第1波長域λ1以及第2波長域λ2，使用適合於各波長域的不同的第1發光區域I1以及第2發光區域I2，提高微細的圖案的轉印性能。換言之，本實施形態在針對第1發光區域I1以及第2發光區域I2的各者，將相互不同的第1波長域λ1以及第2波長域λ2的光用作照明光這點與先前技術不同。
作為從前的變形照明的手法已知的窄環形，本實施形態具有抑制照度的降低，來抑制生產性的降低的效果。又，在本實施形態中，因為使用比窄環形寬的環形(寬度)，與由複眼透鏡7形成的照明強度的不均勻性相伴的照度不均被降低。本實施形態相比於環形寬度窄的窄環形照明，針對特定的間距P以外的間距的圖案也能夠提高轉印性能。
在本實施形態中，相對從前的短波長化所引起的解析能力的提高，長波長的光未被完全遮光，因為在特定的發光區域中使用長波長，焦點深度(DOF：Depth of Focus)被維持。進而，在本實施形態中，因為長波長的光未被完全遮光，能夠抑制照度的降低(生產性的降低)。
＜實施例1＞
參照圖3以及圖4，作為比較例，說明從前的變形照明。圖3示出描繪式(1)所示的照明角度σ
c的圖表。在圖3中，橫線所示的發光區域I0表示從前的變形照明，具體而言內σ為0.45、外σ為0.90的環形照明。曝光波長如波長域λ0所示，是335nm以上且475nm以下，是與汞燈的i線、g線以及h線的譜對應的寬頻照明。發光區域I0包含波長域λ0的照明角度σ
c，上述變形照明如上所述具有抑制與散焦相伴的像對比度的降低的效果。
圖4是用照明光學系統的瞳座標表示圖3所示的從前的變形照明的圖。如圖4所示，從前的變形照明是內σ為0.45、外σ為0.90的環形照明，曝光波長是335nm以上且475nm以下。
以下，說明本實施形態中的變形照明。圖5示出描繪式(1)所示的照明角度σ
c的圖表。針對包含於寬頻照明的相互不同的第1波長域λ1以及第2波長域λ2，分別使用不同的第1發光區域I1以及第2發光區域I2。此外，第1發光區域I1和第2發光區域I2藉由照明光學系統10的瞳面中的瞳半徑被區分。
第1波長域λ1是335nm以上且395nm以下的波長域，是與作為光源1的汞燈的i線的譜對應的波長域。包含第1波長域λ1的光的第1發光區域I1是內σ為0.45、外σ為0.90的環形照明(環形形狀的分佈)。這樣，第1發光區域I1是包含至少第1波長域λ1的光，且第1波長域λ1的光和第2波長域λ2的光的強度比成為第1強度比的第1強度分佈。第1發光區域I1包含第1波長域λ1的照明角度σ
c，上述變形照明如上所述，具有抑制與散焦相伴的像對比度的降低的效果。
第2波長域λ2是395nm以上且475nm以下的波長域，是與作為光源1的汞燈的g線以及h線的譜對應的波長域。包含第2波長域λ2的光的第2發光區域I2是內σ為0.70、外σ為0.90的環形照明(環形形狀的分佈)。這樣，第2發光區域I2是包含至少第2波長域λ2的光，且第1波長域λ1的光和第2波長域λ2的光的強度比成為與第1強度比不同的第2強度比的第2強度分佈。第2發光區域I2包含針對第2波長域λ2的一部分的波長域的照明角度σ
c，上述變形照明如上所述具有抑制與散焦相伴的像對比度的降低的效果。
這樣，本實施形態的變形照明包含第1發光區域I1以及第2發光區域I2，第1發光區域I1和第2發光區域I2的照明光學系統10的瞳面中的徑的大小不同。又，本實施形態的變形照明在內σ為0.45、外σ為0.80的與i線、g線以及h線對應的波長域的環形照明中，截斷在圖5中表示為非發光區域D的內σ為0.45、外σ為0.70的與g線以及h線對應的波長域。非發光區域D是未被用作照明光的區域。非發光區域D較佳為與照明角度σ
c不同的區域。但是，非發光區域D並非不能包含照明角度σ
c，也可以在波長域內的一部分的波長中包含照明角度σ
c。非發光區域D中的波長域的截斷，在照明光學系統10中設置波長濾波器即可。例如，如圖2所示，將使複數波長域中的特定的波長域的光透過或者遮斷來形成第1發光區域I1以及第2發光區域I2的波長濾波器63，配置於照明光學系統10的瞳面的附近即可。
圖5所示的本實施形態的變形照明還能夠如圖6所示的變形照明表示。說明圖6所示的變形照明。第1波長域λ1是335nm以上且395nm以下的波長域，是與作為光源1的汞燈的i線的譜對應的波長域。包含第1波長域λ1的光的第1發光區域I1是內σ為0.45、外σ為0.70的環形照明。第2波長域λ2是335nm以上且475nm以下的波長域，是與作為光源1的汞燈的i線、g線以及h線的譜對應的波長域。包含第2波長域λ2的光的第2發光區域I2是內σ為0.70、外σ為0.90的環形照明。這樣，關於複數波長域的分割，也可以在波長域記憶體在包含於第1波長域λ1和第2波長域λ2這兩者的波長。換言之，第1波長域λ1和第2波長域λ2其一部分的波長域重複也可以。
圖7是用照明光學系統的瞳座標表示圖5、圖6所示的本實施形態的變形照明的圖。參照圖7，斜線所示的環形的內側(內σ為0.45、外σ為0.70)的波長域是335nm以上且395nm以下，與i線對應，g線以及h線被截斷。黑色所示的環形的外側(內σ為0.45、外σ為0.90)的波長域是335nm以上且475nm以下，與i線、g線以及h線對應。如圖7所示，在本實施形態中，將包括第1發光區域I1(第1強度分佈)和第2發光區域I2(第2強度分佈)的變形照明(強度分佈)，以使上述變形照明成為旋轉對稱的方式形成於照明光學系統10的瞳面。
參照圖8，說明使本實施形態的變形照明所引起的針對微細的圖案的轉印性能提高的效果。圖8是示出針對線寬為1.5μm、間距(週期)為3μm的線與空間(LS)圖案的先前技術(圖3)和本實施形態的實施例1(圖7)的轉印性能的比較的圖。投影光學系統的數值孔徑(NA)是0.10。LS圖案包括7條線，評價中央的線。DOF用中央的線的線寬成為-10%的散焦評價。
如圖8所示，在本實施形態的實施例1中，相較於先前技術，像對比度從0.53提高到0.56，並且，光阻像的DOF從47.5μm提高到70.0μm。又，在本實施形態的實施例1中，相較於先前技術，光阻像的側壁角度(side wall angle)從69.4度提高到70.9度。此外，雖然在圖8中未示出，伴隨像對比度的提高，MEEF(Mask Error Enhancement Factor，遮罩誤差增強因數)也提高。這些結果表示如本實施形態所述，藉由針對每個發光區域使用不同的波長域的光，能夠提高與微細的圖案對應的轉印性能。此外，在本實施形態的實施例1中，在環形的內側(內σ為0.45、外σ為0.70)，未使用g線以及h線，所以照度成為先前技術的照度的74%。
詳細而言，在本實施形態的實施例1中，DOF大幅提高包括使用σ為0.70以上的環形的效果。σ為0.70以上的環形中的光具有使LS圖案的中央的線的線寬伴隨散焦減少的效果。因此，用σ為0.70以上的環形中的光，抑制散焦所致的LS圖案的線寬的增大，所以能夠大幅提高DOF。這樣，藉由使用σ大的發光區域，能夠提高LS圖案的DOF。
＜實施例2＞
參照圖9，說明本實施形態的實施例2中的變形照明。圖9示出描繪式(1)所示的照明角度σ
c的圖表。如圖9所示，在實施例2的變形照明中，除了與長波長域的內σ相當的非發光區域D1以外，還存在與短波長域的外σ相當的非發光區域D2。非發光區域D1以及D2是與照明角度σ
c不同的區域。
第1波長域λ1是335nm以上且420nm以下的波長域。包含第1波長域λ1的光的第1發光區域I1是內σ為0.45、外σ為0.70的環形照明。第2長域λ2是395nm以上且475nm以下的波長域。包含第2波長域λ2的光的第2發光區域I2是內σ為0.70、外σ為0.90的環形照明。在第1發光區域I1和第2發光區域I2這兩者中重複地包含395nm以上且420nm以下的波長域的光。如非發光區域D2所示，藉由將外σ的短波長域截斷，能夠得到使位於LS圖案的間距方向的端的線的轉印性能提高的效果。
考慮與圖7同樣地，用照明光學系統的瞳座標表示圖9所示的變形照明的情況。在該情況下，在圖7中，斜線所示的環形的內側(內σ為0.45、外σ為0.70)的波長域是335nm以上且420nm以下，黑色所示的環形的外側(內σ為0.45、外σ為0.90)的波長域是395nm以上且475nm以下。
＜實施例3＞
在遮罩9的圖案(或者轉印圖案)不具有明確的間距P的情況下，無法根據式(1)求出發光區域應包含的區域。在這樣的情況下，設為如包括繞射光強度大的照明角度那樣的發光區域即可。具體而言，包含第1波長域λ1的光的第1發光區域I1包括以下的式(2)所示的針對第1波長域λ1的遮罩圖案的繞射光強度(強度分佈)D大的區域即可。
在式(2)中，mask表示遮罩9的圖案，F表示傅立葉轉換。
遮罩9的圖案具有明確的間距P的情況下的式(1)與遮罩9的圖案的繞射光強度D大的區域對應。式(2)是更一般地表示式(1)的式。這樣，在針對第1波長域λ1的遮罩圖案的繞射光的強度分佈中與比基準強度大的區域對應的照明光學系統10的瞳面的區域中形成第1發光區域I1即可。根據式(2)，如在實施例4中說明，得到如圖10所示的各種變形照明。
＜實施例4＞
圖10A至圖10G是示出從式(2)得到的本實施形態中的各種變形照明的圖。在圖10A至圖10G中，將黑色、斜線以及橫線所示的發光區域分別設為不同的波長域。本實施形態中的寬頻照明不限定波長範圍。在變形照明中使用的波長域既可以包含比i線短的波長，也可以包含比g線長的波長。
圖10A示出包含第1波長域λ1的光的第1發光區域I1、和包含第2波長域λ2的光的第2發光區域I2未分成內側和外側的情況。第1發光區域I1存在於內側和外側，第2發光區域I2以被第1發光區域I1夾在中間的形式存在。圖10B示出將波長域分成第1波長域λ1、第2波長域λ2以及第3波長域λ3這3個，有與各波長域對應的3個發光區域，即第1發光區域I1、第2發光區域I2以及第3發光區域I3的情況。此外，波長域以及發光區域的分割數也可以是4個以上。除此以外，例如，第2發光區域I2也可以是非發光部(未圖示)。換言之，也可以在發光區域的內部存在非發光區域。圖10C示出主要在孔圖案中使用的變形照明，且在小σ照明的內側和外側改變光的波長域的情況。例如，在外側的第2發光區域I2中，藉由將長波長域截斷，在使用相位遮罩的情況下，能夠抑制旁波瓣所致的減膜。圖10D示出組合小σ照明和環形照明的情況。圖10E示出針對環形照明，將與特定的圖案方向對應的角度分量遮光的情況。也可以如圖10(e)所示，有方向差。圖10F示出第1發光區域I1和第2發光區域I2具有共通的內σ和外σ，與圖案方向對應區分的情況。圖10G示出包括第1發光區域I1以及第2發光區域I2的變形照明並非90度旋轉對稱(4次旋轉對稱)，而是180度旋轉對稱(2次旋轉對稱)的情況。如圖10G所示，遮罩9的圖案的繞射光強度變大的區域也有並非90度旋轉對稱的情況。除了這些以外，針對偏光照明，也能夠應用本實施形態。
＜實施例5＞
參照圖11A以及圖11B，說明能夠實現上述變形照明的光源1以及照明光學系統10的結構。圖11A示出用第1光源1A以及第2光源1B構成光源1的情況。第1光源1A以及第2光源1B射出波長相互不同的光。又，從第1光源1A以及第2光源1B的各者射出的光既可以是單一波長的光、窄的波長域的光，也可以是寬頻光。即便是射出單一波長的光、窄的波長域的光的光源，也在使用複數光源，實現相互不同的波長域的光的情況下，作為寬頻照明。本實施形態中的變形照明包括第1發光區域I1以及第2發光區域I2，第1發光區域I1中的第1波長域λ1和第2發光區域I2中的第2波長域λ2不同。上述變形照明能夠藉由合成從第1光源1A射出的光、和從第2光源1B射出的光來形成。也可以在用第1光源1A和第2光源1B形成相互不同的發光區域之後，將其等用照明光學系統10合成。又，也可以用第1光源1A和第2光源1B形成同一發光區域，用波長濾波器改變第1發光區域I1以及第2發光區域I2中的波長域。第1光源1A以及第2光源1B也可以是LED光源。又，構成光源1的光源數不限定於2個，也可以是3個以上。
圖11B示出用3個寬頻光源1C構成光源1的情況。寬頻光源IC射出波長域寬的光。此外，從3個寬頻光源1C射出的光的波長域相同。在該情況下，例如，針對3個寬頻光源1C的各者，設置第1波長濾波器63A、第2波長濾波器63B以及第3波長濾波器63C，按照每個光源形成包含相互不同的波長域的發光區域。又，也可以如圖11B所示，不使用第1波長濾波器63A、第2波長濾波器63B以及第3波長濾波器63C，設置第4波長濾波器65。在該情況下，在將來自3個寬頻光源1C的光合成之後，用第4波長濾波器65形成包含相互不同的波長域的發光區域。再來，也可以併用第1波長濾波器63A、第2波長濾波器63B以及第3波長濾波器63C、和第4波長濾波器65。這些波長濾波器既可以設置於旋轉轉台，也可以設置於移位驅動的光柵類型的機構。由此，使用波長濾波器的情況和未使用波長濾波器的情況的切換變得容易。在圖11B中，示出構成光源1的光源數是3個的情況，但上述光源數沒有限定，例如，也可以是1個。本實施形態並未限定與波長域的分割、發光區域的形成有關的手法。
波長濾波器減小針對特定的波長的透過率即可，無需使針對特定的波長的透過率完全成為零(遮光)。又，無需在發光區域的邊界部將波長域完全分割。進而，不限於利用波長濾波器所致的波長選擇，也可以使用全像元件來抑制光量(照度)的降低。
＜第2實施形態＞
說明將上述變形照明應用於無遮罩曝光裝置的情況。無遮罩曝光裝置取代遮罩9，而具有形成應轉印到基板12的圖案的裝置，例如數位微鏡裝置(DMD)。DMD與遮罩9一樣，配置於投影光學系統11的物體面。DMD包括二維地排列的複數鏡元件(反射面)，藉由利用鏡元件，變更從光源1射出的光的反射方向，形成應轉印到基板12的圖案。
即使在這樣的無遮罩曝光裝置中，在應轉印到基板12的圖案具有明確的間距P的情況下，能夠根據式(1)求出發光區域應包含的區域。因此，還能夠將在實施例1、實施例2中說明的變形照明使用於無遮罩曝光裝置。
另一方面，在應轉印到基板12的圖案不具有明確的間距P的情況下，無法根據式(1)求出發光區域應包含的區域。在這樣的情況下，以包含應轉印到基板12的圖案的繞射光強度大的照明角度的方式設定發光區域即可。具體而言，包含第1波長域λ1的光的第1發光區域I1包括以下的式(3)所示的針對第1波長域λ1的應轉印到基板12的圖案的繞射光強度Dp比基準強度大的區域即可。在此，基準強度是指，例如，繞射光強度Dp的最大值的0.6倍以上且0.9倍以下的強度。
在式(3)中，pattern表示應轉印到基板12的圖案，F表示傅立葉轉換。根據式(3)，如在實施例4中說明，得到如圖10所示的各種變形照明。這樣，上述變形照明與有無遮罩無關，都能夠應用於曝光裝置。
＜第3實施形態＞
參照圖12，說明曝光裝置100中的對基板12進行曝光的處理(曝光方法)。在本實施形態中，以曝光裝置100為例子進行說明，但還能夠應用於無遮罩曝光裝置。
在S121中，將從光源1射出的光(寬頻光)分割成複數波長域，在本實施形態中分割成第1波長域λ1以及第2波長域λ2。波長域根據從光源1射出的光的譜分佈、式(1)、式(2)、式(3)分割。但是，本實施形態關於分割波長域的手法，未加上任何限定。
在S123中，用在S121中分割的第1波長域λ1中包含的波長，算出遮罩9的圖案(遮罩圖案)的第1繞射光強度分佈D1。同樣地，在S125中，用在S121中分割的第2波長域λ2中包含的波長，算出遮罩9的圖案(遮罩圖案)的第2繞射光強度分佈D2。在第1波長域λ1(第2波長域λ2)中包含的波長既可以是代表第1波長域λ1(第2波長域λ2)的單一的波長，也可以是在第1波長域λ1(第2波長域λ2)中包含的複數波長。在針對複數波長求出繞射光強度分佈的情況下，藉由對針對各波長的繞射光強度分佈，求出考慮從光源1射出的光的光譜強度分佈的加權和，作為最終的繞射光強度分佈(D1、D2)。
在S127中，根據第1繞射強度分佈D1，決定第1發光區域I1。同樣地，在S129中，根據第2繞射強度分佈D2，決定第2發光區域I2。第1發光區域I1與第1波長域λ1的發光區域對應，第2發光區域I2與第2波長域λ2的發光區域對應。本實施形態關於決定發光區域的手法，未加上任何限定。
在S131中，用照明光學系統10生成包括在S127中決定的與第1波長域λ1對應的第1發光區域I1以及與第2波長域λ2對應的第2發光區域I2的變形照明，用上述變形照明對遮罩9進行照明。
在S133中，將在S131中照明的遮罩9的圖案的像，經由投影光學系統11，投影到基板12。由此，遮罩9的圖案被轉印到基板12。
＜第4實施形態＞
本發明的實施形態中的物品的製造方法例如適合於製造平面顯示器、液晶顯示元件、半導體元件、MEMS等物品。上述製造方法包括：使用上述曝光裝置100對塗佈有感光劑的基板進行曝光的工程；以及對曝光的感光劑進行顯影的工程。又，將顯影的感光劑的圖案作為遮罩，針對基板進行蝕刻工程、離子注入工程等，在基板上形成電路圖案。重複進行這些曝光、顯影、蝕刻等工程，在基板上形成包括複數層的電路圖案。在後工程中，針對形成有電路圖案的基板進行切割(加工)，進行晶片的安裝、接合、檢查工程。又，上述製造方法能夠包括其他習知的工程(氧化、成膜、蒸鍍、摻雜、平坦化、光阻剝離等)。本實施形態中的物品的製造方法相比於從前，在物品的性能、品質、生產性以及生產成本的至少1個中是有利的。
以上，說明了本發明的實施形態，但本發明當然不限定於這些實施形態，能夠在其要旨的範圍內進行各種變形以及變更。例如，本發明還能夠應用於放大系統、縮小系統的非等倍系的投影光學系統、使用多重曝光、LED光源的曝光裝置。
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In addition, in each drawing, the same reference number is attached|subjected to the same member, and the overlapping description is abbreviate|omitted. FIG. 1 is a schematic diagram showing the structure of an exposure device 100 as one aspect of the present invention. The exposure device 100 is a photolithography device that exposes a substrate using light including a plurality of wavelength ranges and transfers a pattern to the substrate. The exposure apparatus 100 is used for manufacturing flat-panel displays, liquid crystal display elements, semiconductor elements, MEMS, etc., and is particularly suitable as a flat-panel display exposure apparatus. The exposure apparatus 100 has an illumination optical system 10 that illuminates a mask (original plate) 9 as an illuminated surface with light from a light source, and a projection optical system 11 that projects an image of a pattern formed on the mask 9 onto a surface arranged with The mask 9 is in an optically conjugated position with the substrate 12; and the mounting table 38. In this embodiment, the projection optical system 11 is a reflection optical system including mirrors 32, 34, and 36, and reflects light in the order of the mirrors 32, 34, 36, 34, and 32. The image of the pattern of the mask 9, etc. times projected onto the substrate 12. The projection optical system 11 is a reflective optical system that has smaller chromatic aberration of light from the light source than the refractive optical system, and is therefore suitable when using broad-band light (broadband illumination light) including a complex wavelength range. The mounting base 38 is a mounting base that can move while holding the substrate 12 . <First Embodiment> FIG. 2 is a diagram for explaining the structure of the illumination optical system 10 in this embodiment. However, in FIG. 2 , the projection optical system 11 is simplified. As shown in FIG. 2 , the illumination optical system 10 includes a collecting mirror 2 , a focusing lens 5 , a fly-eye lens 7 , a focusing lens 8 , and an aperture 61 . In addition, an optical system (not shown) that shapes the light from the light source 1 so that the cross section of the light has a predetermined shape and a predetermined size is disposed in the optical path from the condensing lens 5 to the mask 9 . The light source 1 emits broad-band light (light in which light of multiple wavelengths is mixed). In this embodiment, the light source 1 includes a mercury lamp that emits ultraviolet light, and emits light in which bright lines (i line (365 nm), g line (405 nm), and h line (436 nm)) of multiple peak wavelengths are mixed. The light source 1 includes a light-emitting part in the vicinity of the first focal point 3 of the condenser mirror 2 , and the condenser mirror 2 condenses the light emitted from the light source 1 at the second focal point 4 . The focusing lens 5 shapes the light condensed at the first focal point 4 into parallel light. The light shaped by the focusing lens 5 enters the incident surface 7 a of the fly-eye lens 7 . The fly-eye lens 7 is an optical integrator composed of a plurality of optical elements, specifically, a plurality of minute lenses. The fly-eye lens 7 forms a secondary light source on the exit surface 7b (light exit surface) from the light incident on the entrance surface 7a (light entrance surface). The light emitted from the fly-eye lens 7 passes through the plurality of converging lenses 8 and illuminates the mask 9 in an overlapping manner. A measuring unit (not shown) is arranged on the mounting table 38 . The above-mentioned measuring unit includes a sensor capable of measuring the shape and light intensity of the secondary light source formed on the emission surface 7b of the fly-eye lens 7, such as a CCD sensor. Deformed illumination (oblique incidence illumination) such as annular illumination (annular-shaped distribution) and quadrupole illumination, which is one of the super-resolution technologies (RET), is effective in improving resolution. Deformed illumination having a predetermined light emission area (intensity distribution) can be realized by the aperture aperture 61 disposed on the exit surface 7 b of the fly-eye lens 7 (optical integrator) corresponding to the pupil plane of the illumination optical system 10 . Here, let the pitch of the pattern of the mask 9 (the period of pattern repetition) be P, the wavelength of the light illuminating the mask 9 (exposure wavelength) be λ, and the numerical aperture of the projection optical system 11 be Set to NA. In this case, by illuminating the mask 9 with deformed illumination including the light-emitting area I including the illumination angle σ c specified by the following equation (1), it is possible to suppress a decrease in image contrast associated with defocus. In equation (1), the illumination angle σ c corresponds to the distance from the origin (pupil radius) when expressed by pupil coordinates set on the pupil plane of the illumination optical system 10 . In conventional anamorphic lighting, for example, in the case of a semiconductor exposure device, the spectrum of light emitted from the light source is narrow, so the wavelength λ is used as a single value. On the other hand, in the flat display exposure apparatus, broadband illumination with a wide spectrum of light emitted from the light source is used. However, in the conventional technology, even for a flat panel display exposure device, like a semiconductor exposure device, the light emitting area of the deformed illumination is determined for a single wavelength λ (for example, the wavelength with the maximum intensity, the center of gravity wavelength after weighting the intensity) . In this embodiment, by using different first light-emitting areas I1 and second light-emitting areas I2 suitable for each wavelength range for the different first wavelength ranges λ1 and second wavelength ranges λ2 included in the broadband illumination, the improvement is improved. Transfer performance of fine patterns. In other words, this embodiment is different from the conventional technology in that light in the first wavelength range λ1 and the second wavelength range λ2 that are different from each other is used as illumination light for each of the first light-emitting area I1 and the second light-emitting area I2. This embodiment has the effect of suppressing a decrease in illumination and suppressing a decrease in productivity by using a narrow ring shape known as a conventional deformation lighting method. Furthermore, in this embodiment, since an annular shape (width) wider than a narrow annular shape is used, illumination unevenness accompanying uneven illumination intensity caused by the fly-eye lens 7 is reduced. Compared with narrow ring illumination with a narrow ring width, this embodiment can improve the transfer performance even for patterns with pitches other than the specific pitch P. In this embodiment, compared with the conventional improvement in resolution caused by shortening the wavelength, the long-wavelength light is not completely blocked because the long wavelength is used in a specific light-emitting area, and the depth of focus (DOF: Depth of Focus) is maintain. Furthermore, in this embodiment, since long-wavelength light is not completely blocked, a decrease in illumination (a decrease in productivity) can be suppressed. <Example 1> Referring to FIGS. 3 and 4 , conventional deformable lighting will be described as a comparative example. FIG. 3 shows a graph depicting the illumination angle σ c represented by equation (1). In FIG. 3 , the light-emitting area I0 shown by the horizontal line represents the conventional deformed lighting, specifically an annular lighting in which the inner σ is 0.45 and the outer σ is 0.90. The exposure wavelength is 335 nm or more and 475 nm or less, as shown in the wavelength range λ0, and is a broadband illumination corresponding to the spectrum of the i-line, g-line, and h-line of the mercury lamp. The light-emitting area I0 includes the illumination angle σ c in the wavelength range λ0 , and the deformed illumination has the effect of suppressing the decrease in image contrast associated with defocusing as described above. FIG. 4 is a diagram showing the conventional deformed illumination shown in FIG. 3 using pupil coordinates of the illumination optical system. As shown in Figure 4, conventional anamorphic illumination was annular illumination with an inner σ of 0.45 and an outer σ of 0.90, and the exposure wavelength was 335 nm or more and 475 nm or less. Hereinafter, the deformable lighting in this embodiment will be described. FIG. 5 shows a graph depicting the illumination angle σ c represented by equation (1). For the mutually different first wavelength range λ1 and second wavelength range λ2 included in the broadband illumination, different first light emitting areas I1 and second light emitting areas I2 are respectively used. In addition, the first light-emitting area I1 and the second light-emitting area I2 are distinguished by the pupil radius in the pupil plane of the illumination optical system 10 . The first wavelength range λ1 is a wavelength range from 335 nm to 395 nm, and is a wavelength range corresponding to the i-line spectrum of the mercury lamp as the light source 1 . The first light-emitting area I1 including the light in the first wavelength range λ1 is annular illumination (annular-shaped distribution) with an inner σ of 0.45 and an outer σ of 0.90. In this way, the first light emitting area I1 is a first intensity distribution including at least the light in the first wavelength range λ1, and the intensity ratio of the light in the first wavelength range λ1 and the light in the second wavelength range λ2 becomes the first intensity ratio. The first light-emitting area I1 includes the illumination angle σ c of the first wavelength range λ1. As described above, the deformed illumination has the effect of suppressing the decrease in image contrast associated with defocusing. The second wavelength range λ2 is a wavelength range from 395 nm to 475 nm, and is a wavelength range corresponding to the g-line and h-line spectra of the mercury lamp as the light source 1 . The second light-emitting area I2 including the light in the second wavelength range λ2 is annular illumination (annular-shaped distribution) with an inner σ of 0.70 and an outer σ of 0.90. In this way, the second light emitting area I2 includes at least the light in the second wavelength range λ2, and the intensity ratio of the light in the first wavelength range λ1 and the light in the second wavelength range λ2 becomes the second intensity ratio that is different from the first intensity ratio. 2nd intensity distribution. The second light emitting area I2 includes the illumination angle σ c for a wavelength range that is part of the second wavelength range λ2 . The above-mentioned deformed illumination has the effect of suppressing a decrease in image contrast associated with defocusing as described above. In this way, the deformed illumination of this embodiment includes the first light-emitting area I1 and the second light-emitting area I2, and the first light-emitting area I1 and the second light-emitting area I2 have different diameters in the pupil plane of the illumination optical system 10 . In addition, the deformed illumination of this embodiment is an annular illumination in the wavelength range corresponding to the i line, g line, and h line with the inner σ being 0.45 and the outer σ being 0.80, and is cut into the non-light-emitting area D shown in FIG. 5 The wavelength range corresponding to the g-line and h-line, where σ is 0.45 and the outer σ is 0.70. The non-light-emitting area D is an area not used as illumination light. The non-luminous area D is preferably an area different from the illumination angle σ c . However, the non-light-emitting region D does not have to include the illumination angle σ c , and the illumination angle σ c may be included in a part of the wavelength within the wavelength range. To cut off the wavelength range in the non-luminous region D, a wavelength filter is provided in the illumination optical system 10 . For example, as shown in FIG. 2 , a wavelength filter 63 that transmits or blocks light in a specific wavelength range among a plurality of wavelength ranges to form the first light-emitting area I1 and the second light-emitting area I2 is disposed in the illumination optical system 10 Just close to the pupil surface. The deformable illumination of this embodiment shown in FIG. 5 can also be represented by the deformable illumination shown in FIG. 6 . The deformed lighting shown in Fig. 6 will be described. The first wavelength range λ1 is a wavelength range from 335 nm to 395 nm, and is a wavelength range corresponding to the i-line spectrum of the mercury lamp as the light source 1 . The first light-emitting area I1 including the light in the first wavelength range λ1 is annular illumination with an inner σ of 0.45 and an outer σ of 0.70. The second wavelength range λ2 is a wavelength range from 335 nm to 475 nm, and is a wavelength range corresponding to the i-line, g-line, and h-line spectra of the mercury lamp as the light source 1 . The second light emitting area I2 including the light in the second wavelength range λ2 is an annular illumination having an inner σ of 0.70 and an outer σ of 0.90. In this way, regarding the division of the complex wavelength domain, the wavelengths included in both the first wavelength domain λ1 and the second wavelength domain λ2 may be stored in the wavelength domain memory. In other words, a part of the first wavelength range λ1 and the second wavelength range λ2 may overlap. FIG. 7 is a diagram showing the deformed illumination of the present embodiment shown in FIGS. 5 and 6 using pupil coordinates of the illumination optical system. Referring to FIG. 7 , the wavelength range of the inner side of the ring (inner σ is 0.45 and outer σ is 0.70) shown by the diagonal lines is 335 nm or more and 395 nm or less, which corresponds to the i line, and the g line and h line are cut off. The wavelength range of the outer side of the ring shown in black (inner σ is 0.45 and outer σ is 0.90) is from 335 nm to 475 nm and corresponds to the i line, g line, and h line. As shown in FIG. 7 , in this embodiment, deformed lighting (intensity distribution) including a first light-emitting area I1 (first intensity distribution) and a second light-emitting area I2 (second intensity distribution) is used so that the above-described deformed lighting The pupil plane of the illumination optical system 10 is formed in a rotationally symmetrical manner. Referring to FIG. 8 , the effect of improving the transfer performance for fine patterns by the deformed illumination according to this embodiment will be described. FIG. 8 shows the transfer performance of the prior art (FIG. 3) and Example 1 (FIG. 7) of this embodiment for a line and space (LS) pattern with a line width of 1.5 μm and a pitch (period) of 3 μm. Comparative graph. The numerical aperture (NA) of the projection optical system is 0.10. The LS pattern consists of 7 lines, and the center line is evaluated. DOF uses the line width of the center line to achieve a defocus evaluation of -10%. As shown in FIG. 8 , in Example 1 of this embodiment, compared with the prior art, the image contrast is increased from 0.53 to 0.56, and the DOF of the photoresist image is increased from 47.5 μm to 70.0 μm. Furthermore, in Example 1 of this embodiment, compared with the prior art, the side wall angle of the photoresist image is increased from 69.4 degrees to 70.9 degrees. In addition, although not shown in FIG. 8 , as the image contrast increases, the MEEF (Mask Error Enhancement Factor) also increases. These results show that by using light in a different wavelength range for each light-emitting region as described in this embodiment, the transfer performance corresponding to a fine pattern can be improved. In addition, in Example 1 of this embodiment, since the g-line and the h-line are not used on the inner side of the ring (inner σ is 0.45 and outer σ is 0.70), the illuminance becomes 74% of the illuminance of the conventional technology. Specifically, in Example 1 of this embodiment, the effect of greatly improving DOF includes using a ring shape with σ of 0.70 or more. The light in the annular shape with σ of 0.70 or more has the effect of reducing the line width of the center line of the LS pattern along with defocusing. Therefore, using light in an annular shape with σ of 0.70 or more suppresses an increase in the line width of the LS pattern due to defocus, so the DOF can be significantly improved. In this way, by using a light-emitting area with a large σ, the DOF of the LS pattern can be improved. <Example 2> Deformable lighting in Example 2 of this embodiment will be described with reference to FIG. 9 . FIG. 9 shows a graph depicting the illumination angle σ c represented by equation (1). As shown in FIG. 9 , in the deformed lighting of Example 2, in addition to the non-light-emitting area D1 corresponding to the inner σ in the long-wavelength range, there is also a non-light-emitting area D2 corresponding to the outer σ in the short-wavelength range. The non-light-emitting areas D1 and D2 are areas different from the illumination angle σ c . The first wavelength range λ1 is a wavelength range from 335 nm to 420 nm. The first light-emitting area I1 including the light in the first wavelength range λ1 is annular illumination with an inner σ of 0.45 and an outer σ of 0.70. The second long range λ2 is a wavelength range from 395 nm to 475 nm. The second light emitting area I2 including the light in the second wavelength range λ2 is an annular illumination having an inner σ of 0.70 and an outer σ of 0.90. Both the first light-emitting region I1 and the second light-emitting region I2 repeatedly include light in the wavelength range of 395 nm or more and 420 nm or less. As shown in the non-luminescent region D2, by cutting off the short wavelength region of the outer σ, the effect of improving the transfer performance of the lines located at the ends in the pitch direction of the LS pattern can be obtained. Consider a case where the deformed illumination shown in FIG. 9 is represented by the pupil coordinates of the illumination optical system in the same manner as in FIG. 7 . In this case, in FIG. 7 , the wavelength range of the inner side of the annular shape shown by hatching (inner σ is 0.45 and outer σ is 0.70) is 335 nm or more and 420 nm or less, and the outer side of the annular shape shown in black (inner σ is 0.45 , the outer σ is 0.90) the wavelength range is from 395nm to 475nm. <Example 3> When the pattern (or transfer pattern) of the mask 9 does not have a clear pitch P, the area to be included in the light-emitting area cannot be determined based on equation (1). In such a case, the light emitting area may be a light-emitting area including an illumination angle with a high intensity of diffracted light. Specifically, the first light emitting area I1 including the light in the first wavelength range λ1 includes an area in which the diffracted light intensity (intensity distribution) D of the mask pattern of the first wavelength range λ1 shown in the following formula (2) is large. That’s it. In equation (2), mask represents the pattern of mask 9, and F represents Fourier transform. Expression (1) when the pattern of the mask 9 has a clear pitch P corresponds to a region in which the diffracted light intensity D of the pattern of the mask 9 is large. Equation (2) is an expression that expresses Equation (1) more generally. In this way, it is sufficient to form the first light emitting area I1 in the area of the pupil surface of the illumination optical system 10 corresponding to an area greater than the reference intensity in the intensity distribution of the diffracted light of the mask pattern in the first wavelength range λ1. According to equation (2), as explained in Example 4, various deformed lightings as shown in FIG. 10 are obtained. <Example 4> FIGS. 10A to 10G are diagrams showing various deformed lighting in this embodiment obtained from equation (2). In FIGS. 10A to 10G , the light-emitting regions shown in black, hatched lines, and horizontal lines are respectively set to different wavelength regions. The broadband illumination in this embodiment is not limited to a wavelength range. The wavelength range used in anamorphic illumination may include wavelengths shorter than the i-line or longer than the g-line. FIG. 10A shows a case where the first light emitting area I1 including the light in the first wavelength range λ1 and the second light emitting area I2 including the light in the second wavelength range λ2 are not divided into the inner side and the outer side. The first light-emitting area I1 exists inside and outside, and the second light-emitting area I2 exists sandwiched by the first light-emitting area I1. FIG. 10B shows that the wavelength range is divided into three wavelength ranges: first wavelength range λ1, second wavelength range λ2, and third wavelength range λ3. There are three light-emitting areas corresponding to each wavelength range, namely, the first light-emitting area I1, the second light-emitting area I1, and the third light-emitting area I1. The case of the light-emitting area I2 and the third light-emitting area I3. In addition, the number of divisions of the wavelength domain and the light emitting region may be four or more. In addition, for example, the second light-emitting area I2 may be a non-light-emitting portion (not shown). In other words, a non-light-emitting area may exist inside the light-emitting area. FIG. 10C shows a case where anamorphic illumination is mainly used in a hole pattern, and the wavelength domain of light is changed inside and outside of small σ illumination. For example, in the outer second light-emitting region I2, by cutting off the long wavelength region, when a phase mask is used, film reduction due to side lobes can be suppressed. Figure 10D shows the case of combining small sigma illumination and ring illumination. FIG. 10E shows a case where the angular component corresponding to a specific pattern direction is blocked from light for ring lighting. There may also be a direction difference as shown in Figure 10(e). FIG. 10F shows a case where the first light-emitting area I1 and the second light-emitting area I2 have a common inner σ and an outer σ and are differentiated according to the pattern direction. FIG. 10G shows a case where the deformed lighting including the first light-emitting area I1 and the second light-emitting area I2 is not 90-degree rotational symmetry (fourth rotational symmetry) but 180-degree rotational symmetry (secondary rotational symmetry). As shown in FIG. 10G , the pattern of the mask 9 may not be 90-degree rotationally symmetrical in areas where the intensity of diffracted light increases. In addition to these, this embodiment can also be applied to polarized lighting. <Example 5> The structure of the light source 1 and the illumination optical system 10 that can realize the above-described deformable illumination will be described with reference to FIGS. 11A and 11B. FIG. 11A shows a case where the light source 1 is composed of the first light source 1A and the second light source 1B. The first light source 1A and the second light source 1B emit light having mutually different wavelengths. In addition, the light emitted from each of the first light source 1A and the second light source 1B may be light of a single wavelength, light of a narrow wavelength range, or broadband light. Even a light source that emits light of a single wavelength or light of a narrow wavelength range can be used as broadband illumination when a plurality of light sources are used to realize light of mutually different wavelength ranges. The deformed lighting in this embodiment includes a first light-emitting area I1 and a second light-emitting area I2. The first wavelength range λ1 in the first light-emitting area I1 and the second wavelength range λ2 in the second light-emitting area I2 are different. The above-mentioned deformed illumination can be formed by combining the light emitted from the first light source 1A and the light emitted from the second light source 1B. You may form mutually different light-emitting areas with the 1st light source 1A and the 2nd light source 1B, and then combine them with the illumination optical system 10. Alternatively, the first light source 1A and the second light source 1B may form the same light emitting area, and a wavelength filter may be used to change the wavelength range in the first light emitting area I1 and the second light emitting area I2. The first light source 1A and the second light source 1B may be LED light sources. In addition, the number of light sources constituting the light source 1 is not limited to two, and may be three or more. FIG. 11B shows a case where the light source 1 is composed of three broadband light sources 1C. Broadband light source IC emits light over a wide wavelength range. In addition, the wavelength ranges of the lights emitted from the three broadband light sources 1C are the same. In this case, for example, a first wavelength filter 63A, a second wavelength filter 63B, and a third wavelength filter 63C are provided for each of the three broadband light sources 1C, and a wavelength range including mutually different wavelengths is formed for each light source. luminous area. Alternatively, as shown in FIG. 11B , the first wavelength filter 63A, the second wavelength filter 63B, and the third wavelength filter 63C may not be used, but the fourth wavelength filter 65 may be provided. In this case, after the lights from the three broadband light sources 1C are combined, the fourth wavelength filter 65 is used to form light-emitting regions including mutually different wavelength regions. Furthermore, the first wavelength filter 63A, the second wavelength filter 63B, the third wavelength filter 63C, and the fourth wavelength filter 65 may be used together. These wavelength filters can be mounted either on a rotating turntable or on a displacement driven grating type mechanism. This makes it easy to switch between using the wavelength filter and not using the wavelength filter. In FIG. 11B , the number of light sources constituting the light source 1 is shown to be three. However, the number of the light sources is not limited. For example, it may be one. This embodiment is not limited to the method related to dividing the wavelength domain and forming the light emitting area. The wavelength filter only needs to reduce the transmittance with respect to a specific wavelength, and does not need to completely reduce the transmittance with respect to a specific wavelength to zero (shield light). In addition, there is no need to completely divide the wavelength domain at the boundary of the light-emitting region. Furthermore, it is not limited to wavelength selection using a wavelength filter, and a holographic element may be used to suppress a decrease in the amount of light (illuminance). <Second Embodiment> A case in which the above-mentioned deformed lighting is applied to a maskless exposure device will be described. The maskless exposure device replaces the mask 9 and has a device that forms a pattern to be transferred to the substrate 12, such as a digital micromirror device (DMD). The DMD, like the mask 9 , is arranged on the object surface of the projection optical system 11 . The DMD includes a plurality of mirror elements (reflective surfaces) arranged two-dimensionally. By using the mirror elements, the reflection direction of the light emitted from the light source 1 is changed, thereby forming a pattern to be transferred to the substrate 12 . Even in such a maskless exposure apparatus, when the pattern to be transferred to the substrate 12 has a clear pitch P, the area to be included in the light-emitting area can be determined based on equation (1). Therefore, the deformed illumination described in Example 1 and Example 2 can also be used in a maskless exposure apparatus. On the other hand, when the pattern to be transferred to the substrate 12 does not have a clear pitch P, the area to be included in the light-emitting area cannot be determined based on equation (1). In such a case, the light-emitting area may be set so as to include an illumination angle at which the diffracted light intensity of the pattern to be transferred to the substrate 12 is high. Specifically, the first light emitting area I1 including the light in the first wavelength range λ1 includes the diffracted light intensity Dp ratio reference of the pattern to be transferred to the substrate 12 in the first wavelength range λ1 represented by the following equation (3). Areas of high intensity are sufficient. Here, the reference intensity refers to, for example, an intensity that is 0.6 times or more and 0.9 times or less than the maximum value of the diffracted light intensity Dp. In the formula (3), pattern represents a pattern to be transferred to the substrate 12, and F represents Fourier transform. According to equation (3), as explained in Example 4, various deformed lightings as shown in FIG. 10 are obtained. In this way, the above-mentioned deformed lighting can be applied to an exposure device regardless of the presence or absence of a mask. <Third Embodiment> The process (exposure method) of exposing the substrate 12 in the exposure device 100 will be described with reference to FIG. 12 . In this embodiment, the exposure apparatus 100 is used as an example for description, but it can also be applied to a maskless exposure apparatus. In S121, the light (broadband light) emitted from the light source 1 is divided into a plurality of wavelength regions. In this embodiment, the light is divided into a first wavelength region λ1 and a second wavelength region λ2. The wavelength domain is divided based on the spectral distribution of the light emitted from the light source 1 and Expression (1), Expression (2), and Expression (3). However, this embodiment does not impose any limitation on the method of dividing the wavelength domain. In S123, the first diffracted light intensity distribution D1 of the pattern of the mask 9 (mask pattern) is calculated using the wavelength included in the first wavelength range λ1 divided in S121. Similarly, in S125, the second diffracted light intensity distribution D2 of the pattern of the mask 9 (mask pattern) is calculated using the wavelength included in the second wavelength range λ2 divided in S121. The wavelength included in the first wavelength range λ1 (the second wavelength range λ2) may be a single wavelength representing the first wavelength range λ1 (the second wavelength range λ2), or it may be a wavelength in the first wavelength range λ1 (the second wavelength range λ2). The complex wavelengths contained in the wavelength domain λ2). When the diffracted light intensity distribution is obtained for a plurality of wavelengths, a weighted sum of the spectral intensity distributions of the light emitted from the light source 1 is obtained as the final diffracted light intensity distribution by comparing the diffracted light intensity distribution for each wavelength. (D1, D2). In S127, the first light emitting area I1 is determined based on the first diffraction intensity distribution D1. Similarly, in S129, the second light emitting area I2 is determined based on the second diffraction intensity distribution D2. The first light-emitting area I1 corresponds to the light-emitting area of the first wavelength range λ1, and the second light-emitting area I2 corresponds to the light-emitting area of the second wavelength range λ2. This embodiment does not place any restrictions on the method of determining the light-emitting area. In S131, the illumination optical system 10 is used to generate deformed illumination including the first light-emitting area I1 corresponding to the first wavelength range λ1 and the second light-emitting area I2 corresponding to the second wavelength range λ2 determined in S127. Illumination illuminates the mask 9 . In S133, the image of the pattern of the mask 9 illuminated in S131 is projected onto the substrate 12 via the projection optical system 11. Thereby, the pattern of the mask 9 is transferred to the substrate 12 . <Fourth Embodiment> The method for manufacturing articles in the embodiment of the present invention is suitable for manufacturing articles such as flat displays, liquid crystal display elements, semiconductor elements, and MEMS, for example. The above-mentioned manufacturing method includes: using the above-mentioned exposure device 100 to expose the substrate coated with the photosensitive agent; and developing the exposed photosensitive agent. Furthermore, using the pattern of the developed photosensitive agent as a mask, an etching process, an ion implantation process, etc. are performed on the substrate to form a circuit pattern on the substrate. These exposure, development, etching and other processes are repeated to form a circuit pattern including a plurality of layers on the substrate. In the post-processing process, the substrate on which the circuit pattern is formed is cut (processed), and wafer mounting, bonding, and inspection processes are performed. In addition, the above-mentioned manufacturing method can include other conventional processes (oxidation, film formation, evaporation, doping, planarization, photoresist stripping, etc.). The method of manufacturing an article in this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods. The embodiments of the present invention have been described above. However, the present invention is of course not limited to these embodiments, and various modifications and changes are possible within the scope of the gist thereof. For example, the present invention can be applied to projection optical systems of non-equal magnification systems such as enlargement systems and reduction systems, and exposure devices using multiple exposures and LED light sources.
