TWI817568B - 半導體製造裝置及半導體裝置的製造方法 - Google Patents
半導體製造裝置及半導體裝置的製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 16
- 229910052755 nonmetal Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000004308 accommodation Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 78
- 230000001681 protective effect Effects 0.000 description 55
- 239000010410 layer Substances 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 47
- 239000000463 material Substances 0.000 description 32
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000009849 deactivation Effects 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000006309 butyl amino group Chemical group 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/34—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
實施形態是在於提供一種在基板上形成膜時可對基板供給合適的氣體之半導體製造裝置及半導體裝置的製造方法。
若根據一實施形態,則半導體製造裝置是具備:
收容基板的收容部;
加熱被收容於前述收容部內的前述基板之加熱器;及
供給氣體至被收容於前述收容部內的前述基板之噴射器。
進一步,前述噴射器是包含:
具有管狀的形狀之第1層;及
被設在前述第1層的表面,具有0.5以下的放射率之第2層。
Description
本案的實施形態是有關半導體製造裝置及半導體裝置的製造方法。
[關聯申請案]
本申請案是享有以日本專利第2021-197802號(申請日:2021年12月6日)作為基礎申請案的優先權。本申請案是藉由參照此基礎申請案而包含其全部的內容。
從噴射器供給氣體至基板,在基板上形成膜時,至氣體到達基板為止,有氣體的狀態變化的情況。
本發明所欲解決的課題是在於提供一種在基板上形成膜時可供給合適的氣體至基板的半導體製造裝置及半導體裝置的製造方法。
實施形態的半導體製造裝置是具備:
收容基板的收容部;
加熱被收容於前述收容部內的前述基板之加熱器;及
供給氣體至被收容於前述收容部內的前述基板之噴射器。
進一步,前述噴射器是包含:
具有管狀的形狀之第1層;及
被設在前述第1層的表面,具有0.5以下的放射率之第2層。
以下,參照圖面說明本發明的實施形態。在圖1~圖12中,在相同的構成是附上同樣的符號,重複的說明是省略。
(第1實施形態)
圖1是表示第1實施形態的半導體製造裝置的構造的縱剖面圖。
本實施形態的半導體製造裝置是例如ALD (Atomic Layer Depositon)裝置等的CVD(Chemical Vapor Deposition)裝置。本實施形態的半導體製造裝置是如圖1所示般,成為可同時處理複數的晶圓W的分批處理裝置。各晶圓W是基板的一例。
本實施形態的半導體製造裝置是具備:作為收容部之一例的爐管(tube)1、晶舟2、加熱器3、噴射器4、氣體供給部5及控制部6。噴射器4是包含複數的孔11。
圖1是表示彼此垂直的X方向、Y方向及Z方向。在此說明書中,將+Z方向作為上方向處理,將-Z方向作為下方向處理。-Z方向是亦可與重力方向一致,或亦可未與重力方向一致。
以下,參照圖1來說明本實施形態的半導體製造裝置的詳細。在此說明之中,圖2也適宜參照。圖2是表示第1實施形態的半導體製造裝置的構造的橫剖面圖。圖2是表示通過圖1所示的任一的孔11的XY剖面。
爐管(tube)1是例如以石英所形成的石英爐管。晶舟(boat)2是具有複數的凹槽(slot),可載置複數的晶圓W,在各凹槽載置1片的晶圓W。在圖1中,各晶圓W會被收容於爐管1內,被載置於晶舟2的各凹槽。在圖2中,以晶圓W的中心與晶舟2的中心會重疊於Z方向的方式,在晶舟2上載置晶圓W。圖2的點C是表示通過晶圓W的中心及晶舟2的中心的軸。
加熱器3是加熱被收容於爐管1內的各晶圓W。本實施形態的加熱器3是被設在爐管1的外部,被配置於爐管1的外側的側面附近。圖1及圖2所示的加熱器3是具有包圍爐管1的管狀的形狀,但亦可具有其他的形狀。各晶圓W是例如藉由從加熱器3產生的熱或電磁波來加熱。
噴射器4是將氣體供給至被收容於爐管1內的各晶圓W。本實施形態的噴射器4是包含多數的孔11,該等的孔11的個數、孔徑及間隔是被設定成可均一地供給氣體至各晶圓W的值。本實施形態的噴射器4是被設在爐管1的內部,被配置於爐管1的內側的側面附近。噴射器4是例如包含作為第1層的一例的母材4a及作為第2層的一例的保護膜4b。
母材4a是具有延伸於Z方向的管狀的形狀。母材4a是形成具有內周面及外周面的管。各孔11是被設在此管的側面,與此管的內部連通。上述的氣體是如在圖1及圖2以箭號所示般,以通過此管的內部的形式來通過噴射器4內,從各孔11往各晶圓W噴出。母材4a是例如成為絕緣膜。本實施形態的母材4a是以石英所形成。
保護膜4b是被形成於母材4a的表面。本實施形態的保護膜4b是如圖1及圖2所示般,被形成於母材4a的表面全體,因此被形成於母材4a的內周面及外周面。本實施形態的保護膜4b是以放射率(emissivity)低的材料所形成,形成不易熱放射。本實施形態的保護膜4b的放射率是例如0.5以下。保護膜4b是例如成為W(鎢)層等的金屬層。有關保護膜4b的放射率的更詳細是後述。
另外,圖1及圖2所示的噴射器4是為了容易看見母材4a及保護膜4b,而以比實際的大小更大的大小來描繪。
氣體供給部5是可將各種的種類的氣體供給至噴射器4。從氣體供給部5供給的氣體是例如用以在各晶圓W上形成膜的來源氣體。例如,在各晶圓W上形成SiO
2膜(矽氧化膜)時,氣體供給部5是將含有Si(矽)的Si來源氣體及含有O(氧)的O來源氣體供給至噴射器4。Si來源氣體的例子是矽烷氣體(例如SiH
4、Si
2H
6)、氯矽烷氣體(例如SiH
3Cl、SiH
2Cl
2、SiHCl
3、SiCl
4)、胺基矽烷氣體(例如BTBAS(雙(第三丁基胺基)矽烷))等(H是表示氫,Cl是表示氯)。O來源氣體的例子是O
3(臭氧)氣體等。例如,從氣體供給部5經由噴射器4來供給SiH
4氣體及O
3氣體至各晶圓W,藉此在各晶圓W上形成SiO
2膜。
另外,氣體供給部5是亦可將來源氣體以外的氣體供給至噴射器4。如此的氣體的例子是稀有氣體或N
2(氮)氣體等的惰性氣體。又,氣體供給部5是亦可藉由化學反應來使產生氣體,將此氣體供給至噴射器4,或亦可藉由氣化使從液體產生氣體,將此氣體供給至噴射器4。
控制部6是控制本實施形態的半導體製造裝置的各種的動作。例如,控制部6是控制晶舟2的旋轉、加熱器3的ON・OFF、加熱器3的發熱量、從氣體供給部5供給的氣體的ON・OFF、從氣體供給部5供給的氣體的種類、從氣體供給部5供給的氣體的流量等。
其次,接著參照圖1,說明有關本實施形態的半導體製造裝置的進一步的詳細。
在晶圓W上形成SiO
2膜時,最好一邊藉由加熱器3來高溫加熱晶圓W,一邊從噴射器4供給Si來源氣體及O來源氣體至晶圓W。理由是為了降低被形成於晶圓W上的SiO
2膜的濕蝕刻速率或收縮率。
然而,若O來源氣體的O
3氣體被加熱,則恐有O
3氣體失活之虞。亦即,恐有O
3氣體變化成O
2氣體之虞。例如,若噴射器4藉由加熱器3加熱,則O
3氣體會在噴射器4內被加熱而失活。噴射器4是具有在Z方向長的大小,且被配置於加熱器3的附近,因此O
3氣體容易在噴射器4內被加熱。
於是,本實施形態的噴射器4是藉由以保護膜4b覆蓋母材4a而形成。本實施形態的保護膜4b是具有0.5以下的低的放射率,因此不易熱放射。放射率低的材料是難吸收熱或電磁波。所以。本實施形態的保護膜4b是不易吸收來自加熱器3的熱或電磁波,因此難藉由加熱器3而被加熱。所以,若根據本實施形態,則藉由形成包含母材4a及保護膜4b的噴射器4,可抑制噴射器4藉由加熱器3而被加熱。藉此,可抑制O
3氣體在噴射器4內被加熱,可抑制O
3氣體的失活。
在本實施形態中,一邊藉由加熱器3加熱各晶圓W,一邊如此的噴射器4供給Si來源氣體及O來源氣體至各晶圓W。因此,加熱器3加熱各晶圓W的期間,噴射器4內的溫度會形成比各晶圓W的溫度更低。例如,噴射器4的內部的空間的溫度會形成比爐管1的內部的各晶圓W的附近的空間的溫度更低。藉此,可抑制在噴射器4內的O
3氣體的失活。例如,即使各晶圓W的溫度形成比500℃更高溫(例:約550℃),噴射器4內的溫度也被保持於比500℃更低溫(例:約450℃)。
噴射器4包含母材4a,但不包含保護膜4b時,可思考以低溫加熱各晶圓W。此情況,由於噴射器4內的溫度也形成低溫,因此可抑制O
3氣體的失活。然而,若以低溫加熱各晶圓W,則無法形成高品質的SiO
2膜。另一方面,當噴射器4包含母材4a及保護膜4b時,雖噴射器4內的溫度形成低溫,但可高溫加熱各晶圓W。藉此,可一面抑制O
3氣體的失活,一面短時間形成高品質的SiO
2膜。
如此的效果是在形成SiO
2膜以外的膜的情況或使用O
3氣體以外的氣體的情況也可取得。例如,若某來源氣體在噴射器4內被加熱至某溫度以上,則會在噴射器4內引起CVD反應,CVD膜會堆積於噴射器4的表面。噴射器4的內部是壓力比爐管1內的其他的區域更高,因此CVD膜的堆積速度快。所以,噴射器4及孔11的內徑會因為CVD膜而變小,而有在氣體供給產生狀態不佳的情況或噴射器4因為CVD膜的應力而折斷的情況,需要定期性的噴射器4的更換。然而,若從本實施形態的噴射器4供給此來源氣體至各晶圓W,則可抑制噴射器4內的CVD膜的堆積速度。藉此,可兼顧膜的品質及膜的生產性。
另外,保護膜4b是亦可為W層以外的金屬層,或亦可為金屬層以外的膜。例如,保護膜4b是亦可為以金屬單體所形成,或亦可以金屬化合物所形成。前者的保護膜4b的例子是W層或含有W元素以外的1種類的金屬元素的金屬層。後者的保護膜4b的例子是含有W元素及其他的元素(可為金屬元素或非金屬元素)的金屬層。
圖3是表示第1實施形態的第1及第2變形例的半導體製造裝置的構造的橫剖面圖。
本實施形態的半導體製造裝置是如圖3(a)或圖3(b)所示般,亦可具備複數的噴射器4。圖3(a)所示的半導體製造裝置是具備2個的噴射器4。圖3(b)所示的半導體製造裝置是具備3個的噴射器4。圖3(a)或圖3(b)所示的各噴射器4的構造或動作是與圖1及圖2所示的噴射器4同樣。在圖3(a)或圖3(b)中,亦可從相同的噴射器4供給或從不同的噴射器4供給Si來源氣體及O來源氣體。
圖4是表示第1實施形態的第3及第4變形例的半導體製造裝置的構造的縱剖面圖。
本實施形態的噴射器4是如圖4(a)或圖4(b)所示般,亦可只在母材4a的表面的一部分含有保護膜4b。就圖4(a)所示的噴射器4而言,保護膜4b只被形成於母材4a的內周面及外周面之中母材4a的內周面。就圖4(b)所示的噴射器4而言,保護膜4b只被形成於母材4a的內周面及外周面之中母材4a的外周面。但,為了有效地抑制O
3氣體的失活,最好保護膜4b被形成於母材4a的內周面及外周面。
圖5是表示第1實施形態的第5變形例的半導體製造裝置的構造的縱剖面圖及橫剖面圖。
本實施形態的噴射器4是如圖5(a)及圖5(b)所示般,亦可包含母材4a、保護膜4b以及保護膜4c。在圖5(a)及圖5(b)中,保護膜4c會在母材4a的表面隔著保護膜4b而形成。保護膜4c在圖5(a)及圖5(b)中是被形成於母材4a的內周面及外周面的雙方,但亦可只被形成於母材4a的內周面及外周面的一方。又,保護膜4c是亦可被設在圖4(a)或圖4(b)所示的噴射器4。保護膜4c是例如SiO
2膜等的非金屬層。保護膜4c是第3層的一例。
當保護膜4b為金屬層(例如W層)時,保護膜4b中所含的金屬原子(例如W原子)恐有汙染爐管1的內部之虞。於是,圖5(a)及圖5(b)所示的保護膜4b是以保護膜4c所覆蓋。藉此,可抑制保護膜4b成為爐管1的污染源。
為此,最好保護膜4c是以不污染爐管1的內部的材料或難以污染爐管1的內部的材料所形成。例如,若保護膜4c為非金屬層,則由於保護膜4c不含金屬原子(除了雜質原子),因此可抑制保護膜4c成為爐管1的污染源。又,若保護膜4c為SiO
2膜,則由於SiO
2膜是含在多數的半導體裝置的膜,因此可抑制保護膜4c成為爐管1的污染源。
另外,當某金屬層不污染爐管1的內部時,或難以污染爐管1的內部時,保護膜4c是亦可設為其金屬氧化膜。如此的金屬氧化膜的例子是Al
2O
3膜(鋁氧化膜)。
又,保護膜4c是亦可用放射率低的材料所形成,或亦可用放射率高的材料所形成。例如,保護膜4c的放射率是亦可為0.5以下,或亦可比0.5更大。但,當保護膜4c的放射率高時,恐有保護膜4c促進O
3氣體的失活之虞,因此最好將保護膜4c的厚度設為薄。例如,保護膜4c的厚度是亦可與保護膜4b的厚度同程度,或亦可比保護膜4b的厚度更薄。
如以上般,本實施形態的噴射器4是在母材4a的表面包含具有低的放射率的保護膜4b。因此,若根據本實施形態,則在晶圓W上形成膜時,可供給合適的氣體至晶圓W。例如,可抑制用以在晶圓W上形成SiO
2膜的O
3氣體的失活。
(第2實施形態)
圖6及圖7是分別表示第2實施形態的半導體製造裝置的構造之縱剖面圖及橫剖面圖。圖7是表示通過在圖6所示的任一個的孔11的XY剖面。
本實施形態的半導體製造裝置是具備與第1實施形態的半導體裝置同樣的構成要素。但,本實施形態的爐管1是包含:在晶舟2上收容複數的晶圓W的內部爐管1a、及收容此內部爐管1a的外部爐管1b。內部爐管1a與外部爐管1b的各者是例如石英爐管。內部爐管1a是第1收容部的一例,外部爐管1b是第2收容部的一例。
在本實施形態中,加熱器3會被設在外部爐管1b的外部,噴射器4會被設在內部爐管1a的內部。但,圖6及圖7所示的噴射器4是以比實際的大小更大的大小來描繪的關係上,是被描繪成與內部爐管1a重疊的位置,不是內部爐管1a的內部。噴射器4是亦可與內部爐管1a接觸,或亦可不與內部爐管1a接觸。
圖7是表示從噴射器4的孔11噴出氣體的情況。從孔11噴出的氣體是被供給至晶圓W,為了在晶圓W上形成膜而被使用。不貢獻於膜的形成殘留的氣體或形成膜時產生的氣體是從被設在內部爐管1a的排氣口12排出,通過內部爐管1a與外部爐管1b之間,而被排出至外部爐管1b外。
如以上般,包含母材4a及保護膜4b的噴射器4是在含有內部爐管1a及外部爐管1b的爐管1也可適用。
(第3實施形態)
圖8~圖12是表示第3實施形態的半導體裝置的製造方法的縱剖面圖。本實施形態的半導體裝置是例如立體半導體記憶體。
在圖8~圖12所示的工程中,各種的SiO
2膜會被形成。該等的SiO
2膜之中的至少任一者是亦可在第1或第2實施形態的半導體製造裝置內被形成。又,圖8~圖12所示的其他的膜也亦可在第1或第2實施形態的半導體製造裝置內被形成。
首先,準備基板21(圖8)。基板21是例如Si基板等的半導體基板。本實施形態的基板21是相當於第1或第2實施形態的各晶圓W的具體例。
其次,在基板21上交替形成複數的絕緣層22及複數的犠牲層23(圖8)。其結果,包含該等的絕緣層22及犠牲層23的層疊膜24會被形成於基板21上。各絕緣層22是例如SiO
2膜。各犠牲層23是例如SiN膜(矽氮化膜)。
其次,藉由微影及RIE(Reactive ion Etching),在層疊膜24內形成複數的存儲孔(Memory Hole)H1(圖9)。圖9是表示在該等的存儲孔H1之中的1個。
其次,在各存儲孔H1內依序形成區塊絕緣膜31的絕緣膜31a、電荷蓄層疊32、隧道絕緣膜33、通道半導體層34及核心絕緣膜35(圖10)。絕緣膜31a是例如SiO
2膜。電荷蓄層疊32是例如SiN膜。隧道絕緣膜33是例如SiO
2膜或SiON膜(矽氧氮化膜)。通道半導體層34是例如多晶矽層。核心絕緣膜35是例如SiO
2膜。
其次,在層疊膜24內形成未圖示的縫隙,藉由來自縫隙的溼蝕刻,除去各犠牲層23(圖11)。其結果,在層疊膜24內形成複數的空洞H2。
其次,在各空洞H2內依序形成區塊絕緣膜31的絕緣膜31b、障壁金屬(barrier metal)層25a及電極材層25b(圖12)。其結果,在基板21上形成含有複數的絕緣層22及複數的電極層25的層疊膜26。亦即,各犠牲層23會被置換成1個的電極層25,層疊膜24會被置換成層疊膜26。各電極層25是在1個的空洞H2內隔著絕緣膜31b而形成,依序含有障壁金屬層25a及電極材層25b。絕緣膜31b是例如Al
2O
3膜。障壁金屬層25a是例如TiN膜(鈦氮化膜)。電極材層25b是例如、W(鎢)層。
然後,在基板21上形成各種的插塞層、配線層、層間絕緣膜等。如此,製造本實施形態的半導體裝置。
若根據本實施形態,則在基板21上形成膜時,藉由在第1或第2實施形態的半導體製造裝置內在基板21上形成膜,可對基板21供給好適的氣體。例如,可抑制用以在基板21上形成SiO
2膜的O
3氣體的失活。
以上,說明了幾個的實施形態,但該等的實施形態是作為例子提示者,不是意圖限定發明的範圍。在本說明書說明的新穎的裝置及方法是能以其他的各種的形態實施。並且,對於在本說明書說明的裝置及方法的形態,可在不脫離發明的主旨的範圍內進行各種的省略、置換、變更。申請專利範圍及其均等的範圍是意圖包含發明的範圍或主旨中所含的如此的形態或變形例。
1:爐管
1a:內部爐管
1b:外部爐管
2:晶舟
3:加熱器
4:噴射器
4a:母材
4b:保護膜
4c:保護膜
5:氣體供給部
6:控制部
11:孔
12:排氣口
21:基板
22:絕緣層
23:犠牲層
24:層疊膜
25:電極層
25a:障壁金屬層
25b:電極材層
26:層疊膜
31:區塊絕緣膜
31a:絕緣膜
31b:絕緣膜
32:電荷蓄層疊
33:隧道絕緣膜
34:通道半導體層
35:核心絕緣膜
[圖1]是表示第1實施形態的半導體製造裝置的構造的縱剖面圖。
[圖2]是表示第1實施形態的半導體製造裝置的構造的橫剖面圖。
[圖3]是表示第1實施形態的第1及第2變形例的半導體製造裝置的構造的橫剖面圖。
[圖4]是表示第1實施形態的第3及第4變形例的半導體製造裝置的構造的縱剖面圖。
[圖5]是表示第1實施形態的第5變形例的半導體製造裝置的構造的縱剖面圖及橫剖面圖。
[圖6]是表示第2實施形態的半導體製造裝置的構造的縱剖面圖。
[圖7]是表示第2實施形態的半導體製造裝置的構造的橫剖面圖。
[圖8~圖12]是表示第3實施形態的半導體裝置的製造方法的縱剖面圖。
1:爐管
2:晶舟
3:加熱器
4:噴射器
4a:母材
4b:保護膜
5:氣體供給部
6:控制部
11:孔
W:晶圓
Claims (12)
- 一種半導體製造裝置,其特徵是具備:收容基板的收容部;加熱被收容於前述收容部內的前述基板之加熱器;及供給氣體至被收容於前述收容部內的前述基板之噴射器,前述噴射器是包含:具有管狀的形狀之第1層;被設在前述第1層的表面,具有0.5以下的放射率之第2層;及在前述第1層的表面隔著前述第2層而設的第3層。
- 如請求項1記載的半導體製造裝置,其中,前述第1層是包含絕緣膜。
- 如請求項1記載的半導體製造裝置,其中,前述第2層是被設在前述第1層的內周面及外周面。
- 如請求項1記載的半導體製造裝置,其中,前述第2層是被設在前述第1層的內周面及外周面之中,僅前述第1層的內周面,或僅前述第1層的外周面。
- 如請求項1記載的半導體製造裝置,其中,前述第3層是包含非金屬層。
- 如請求項1記載的半導體製造裝置,其中,前述噴射器是包含噴出前述氣體至前述基板的孔。
- 如請求項6記載的半導體製造裝置,其中,前述收容部是可收容複數的基板, 前述噴射器是包含噴出前述氣體至前述複數的基板的複數的孔。
- 如請求項1記載的半導體製造裝置,其中,前述加熱器是被設在前述收容部的外部,前述噴射器是被設在前述收容部的內部。
- 如請求項1~8中的任一項記載的半導體製造裝置,其中,前述加熱器加熱前述基板的期間,前述噴射器內的溫度是比前述基板的溫度更低。
- 如請求項1記載的半導體製造裝置,其中,前述收容部是包含收容前述基板的第1收容部及收容前述第1收容部的第2收容部。
- 一種半導體製造裝置,其特徵是具備:收容基板的收容部;加熱被收容於前述收容部內的前述基板之加熱器;及供給氣體至被收容於前述收容部內的前述基板之噴射器,前述噴射器是包含:具有管狀的形狀之第1層;被設在前述第1層的表面,含有金屬層的第2層;及在前述第1層的表面隔著前述第2層而設的第3層。
- 如請求項11記載的半導體製造裝置,其中,前述第1層是包含絕緣膜。
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TW201350620A (zh) * | 2012-05-25 | 2013-12-16 | Kookje Electric Korea Co Ltd | 噴嘴單元及使用該噴嘴單元的基板處理設備 |
TW201604964A (zh) * | 2014-03-24 | 2016-02-01 | 東京威力科創股份有限公司 | 立式熱處理裝置之運轉方法、記錄媒體及立式熱處理裝置 |
TW201736634A (zh) * | 2016-03-04 | 2017-10-16 | 東京威力科創股份有限公司 | 混合氣體複數系統供給體系及利用該體系的基板處理裝置 |
TW201801182A (zh) * | 2016-03-03 | 2018-01-01 | 東京威力科創股份有限公司 | 氣化原料供給裝置及利用該氣化原料供給裝置的基板處理裝置 |
TW201843736A (zh) * | 2017-03-21 | 2018-12-16 | 日商東京威力科創股份有限公司 | 氣體供給構件及氣體處理裝置 |
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TW201350620A (zh) * | 2012-05-25 | 2013-12-16 | Kookje Electric Korea Co Ltd | 噴嘴單元及使用該噴嘴單元的基板處理設備 |
TW201604964A (zh) * | 2014-03-24 | 2016-02-01 | 東京威力科創股份有限公司 | 立式熱處理裝置之運轉方法、記錄媒體及立式熱處理裝置 |
TW201801182A (zh) * | 2016-03-03 | 2018-01-01 | 東京威力科創股份有限公司 | 氣化原料供給裝置及利用該氣化原料供給裝置的基板處理裝置 |
TW201736634A (zh) * | 2016-03-04 | 2017-10-16 | 東京威力科創股份有限公司 | 混合氣體複數系統供給體系及利用該體系的基板處理裝置 |
TW201843736A (zh) * | 2017-03-21 | 2018-12-16 | 日商東京威力科創股份有限公司 | 氣體供給構件及氣體處理裝置 |
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