TWI817330B - Wire bonding device, control method of wire bonding device, and control program of wire bonding device - Google Patents
Wire bonding device, control method of wire bonding device, and control program of wire bonding device Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 36
- 238000003384 imaging method Methods 0.000 claims abstract description 54
- 229910052573 porcelain Inorganic materials 0.000 claims abstract description 24
- 238000005259 measurement Methods 0.000 claims description 42
- 238000005304 joining Methods 0.000 claims description 8
- 238000010891 electric arc Methods 0.000 claims description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
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- 239000004065 semiconductor Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 238000000691 measurement method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
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- 238000002360 preparation method Methods 0.000 description 3
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- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78267—Flame torch, e.g. hydrogen torch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78702—Means for aligning in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78753—Means for optical alignment, e.g. sensors
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/789—Means for monitoring the connection process
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85043—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a flame torch, e.g. hydrogen torch
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Abstract
本發明提供一種打線接合裝置,可防止於無空氣球偏芯的狀況下執行接合。打線接合裝置包括:瓷嘴,供給接合線;氣炬,對自瓷嘴伸出的接合線的線尾形成無空氣球;攝像部,拍攝藉由氣炬於前端部形成有無空氣球的狀態的線尾;以及測量部,基於自攝像部輸出的圖像來測量無空氣球相對於接合線的中心軸的偏移。The present invention provides a wire bonding device that can prevent bonding from being performed when an airless ball is eccentric. The wire bonding device includes: a porcelain nozzle, which supplies the bonding wire; an air torch, which forms an air-free balloon at the end of the bonding line protruding from the porcelain nozzle; and a camera unit, which takes pictures of the air-free balloon formed at the front end by the air torch a line tail; and a measuring unit that measures the deflection of the airless balloon relative to the central axis of the bonding line based on the image output from the imaging unit.
Description
本發明是有關於一種打線接合(wire bonding)裝置、打線接合裝置的控制方法以及打線接合裝置的控制程式。The present invention relates to a wire bonding device, a control method of the wire bonding device, and a control program of the wire bonding device.
打線接合裝置中,重要的是使無空氣球(Free Air Ball,FAB)的形狀穩定。例如,根據專利文獻1,藉由研究接合線(bonding wire)的組成從而形成穩定的FAB。 [先前技術文獻] [專利文獻] In a wire bonding device, it is important to stabilize the shape of the Free Air Ball (FAB). For example, according to Patent Document 1, a stable FAB is formed by studying the composition of a bonding wire. [Prior technical literature] [Patent Document]
專利文獻1:日本專利第5807992號Patent Document 1: Japanese Patent No. 5807992
[發明所欲解決之課題][Problem to be solved by the invention]
打線接合裝置中利用的接合線為多種多樣,大多亦根據目的而區分使用。因此,僅限於可利用特定組成的接合線成為大的限制。另外,不限於組成,環境溫度或引線徑、線尾長等因素亦可能對無空氣球相對於引線軸心的偏芯造成影響。無空氣球的偏芯會引起壓接球的偏芯,可能導致襯墊電極間的短路等不良。There are various types of bonding wires used in wire bonding devices, and most of them are used differently depending on the purpose. Therefore, it is a big limitation that only bonding wires with a specific composition can be used. In addition, factors such as environmental temperature, lead diameter, and wire tail length may also affect the eccentricity of the airless balloon relative to the lead axis, not limited to the composition. The eccentricity of the airless balloon will cause the eccentricity of the press ball, which may cause short circuits between the pad electrodes and other defects.
本發明是為了解決此種問題而成,提供一種打線接合裝置等,可防止於無空氣球偏芯的狀態下執行接合。 [解決課題之手段] The present invention is made in order to solve this problem, and provides a wire bonding device and the like that can prevent bonding from being performed in a state where the airless ball is eccentric. [Means to solve the problem]
本發明的第一態樣的打線接合裝置包括:瓷嘴,供給接合線;氣炬(torch),對自瓷嘴伸出的接合線的線尾(wire tail)形成無空氣球;攝像部,拍攝藉由氣炬於前端部形成有無空氣球的狀態的線尾;以及測量部,基於自攝像部輸出的圖像來測量無空氣球相對於接合線的中心軸的偏移。A wire bonding device according to a first aspect of the present invention includes: a porcelain nozzle for supplying a bonding wire; a torch for forming an airless balloon on the wire tail of the bonding wire extending from the porcelain nozzle; and a camera unit, A method for photographing the line tail with an airless balloon formed at the front end by a gas torch; and a measuring section for measuring a displacement of the airless balloon relative to the central axis of the bonding line based on an image output from the imaging section.
本發明的第二態樣的打線接合裝置的控制方法具有:線尾形成步驟,自瓷嘴的前端部伸出接合線而形成線尾;無空氣球形成步驟,使用氣炬於線尾的前端部形成無空氣球;攝像步驟,拍攝形成有無空氣球的線尾;以及測量步驟,基於攝像步驟中輸出的圖像來測量無空氣球相對於接合線的中心軸的偏移。The control method of the wire bonding device of the second aspect of the present invention includes: a wire tail forming step, extending the bonding wire from the front end of the porcelain nozzle to form a wire tail; and an airless balloon forming step, using an air torch on the front end of the wire tail forming an airless balloon at the end; a photographing step of photographing the end of the line formed with the airless balloon; and a measuring step of measuring the offset of the airless balloon relative to the central axis of the joint line based on the image output in the photographing step.
本發明的第三態樣的打線接合裝置的控制程式使電腦執行:線尾形成步驟,自瓷嘴的前端部伸出接合線而形成線尾;無空氣球形成步驟,使用氣炬於線尾的前端部形成無空氣球;攝像步驟,拍攝形成有無空氣球的線尾;測量步驟,基於攝像步驟中輸出的圖像來測量無空氣球相對於接合線的中心軸的偏移。 [發明的效果] The control program of the wire bonding device of the third aspect of the present invention causes the computer to execute: the wire tail forming step, extending the bonding wire from the front end of the porcelain nozzle to form the wire tail; and the airless balloon forming step, using an air torch to form the wire tail. An airless balloon is formed at the front end of the line; the imaging step is to photograph the line tail formed with the airless balloon; and the measuring step is to measure the offset of the airless balloon relative to the central axis of the joint line based on the image output in the imaging step. [Effects of the invention]
根據本發明的打線接合裝置等,可於實際製造半導體晶片的製造環境下形成無空氣球並立即測量其偏芯狀態,故而可防止於無空氣球偏芯的狀態下執行接合。According to the wire bonding apparatus and the like of the present invention, an airless ball can be formed in a manufacturing environment where semiconductor wafers are actually manufactured and its eccentricity can be measured immediately, thereby preventing bonding from being performed in an eccentric state of the airless ball.
以下,藉由發明的實施形態對本發明加以說明,但並非將申請專利範圍所記載的發明限定於以下的實施形態。另外,未必實施形態中說明的結構全部作為解決課題的手段而必需。Hereinafter, the present invention will be described based on the embodiments of the invention. However, the invention described in the claimed scope is not limited to the following embodiments. In addition, not all the structures described in the embodiments are necessary as means to solve the problems.
圖1為示意性地表示本實施形態的打線接合機100的要部的立體圖。圖示的打線接合機100為了理解而使用簡化的結構或機構,或者使要素的大小或形狀不同,或者將與本實施形態並無直接關係的要素省略,但並非意指表示與實際的打線接合機的差異。FIG. 1 is a perspective view schematically showing the main parts of the wire bonding machine 100 according to this embodiment. The illustrated wire bonding machine 100 uses a simplified structure or mechanism for the sake of understanding, or makes the size or shape of the elements different, or omits elements not directly related to the present embodiment, but this is not meant to represent actual wire bonding. machine differences.
打線接合機100為藉由作為接合線的引線300將半導體晶片320的襯墊電極(pad electrode)321與基板330的導線電極(lead electrode)322連線的接合裝置。打線接合機100主要包括頭部110、工具部120、氣炬131、瓷嘴133、第一攝像單元151、第二攝像單元152。頭部110支持工具部120、氣炬131、第一攝像單元151、第二攝像單元152,藉由頭驅動馬達141而可於平面方向移動。平面方向如圖所示,為由X軸方向及Y軸方向規定的水平方向,亦為載置於架台210的平台220的移動方向。於平台220上載置並固定有基板330。The wire bonding machine 100 is a bonding device that connects a pad electrode 321 of a semiconductor chip 320 and a lead electrode 322 of a substrate 330 through a
工具部120支持沿Y軸方向分別伸出的線夾(clamper)132及轉換器(transducer)134,於轉換器134的前端部配設有瓷嘴133。線夾132具有夾持引線300的手(hand),按照打線接合機100的控制而夾緊、鬆開引線300。轉換器134於接合時經由瓷嘴133對引線300的前端附近給予超音波振動。瓷嘴133發揮下述功能,即:引導引線300而向襯墊電極321、導線電極322供給,並且於接合時前端部將引線300按壓於襯墊電極321、導線電極322。引線300是自包含張緊器(tensioner)或旋轉線軸的未圖示的引線供給部供給。引線300的材料根據半導體晶片320的種類或性質等而適當選擇,例如採用金、銀、銅。The tool part 120 supports a clamp 132 and a transducer 134 respectively extending along the Y-axis direction, and a
氣炬131支持於頭部110,於前端部包括放電電極。於對襯墊電極321的第一次接合(first bond)時,自瓷嘴133的前端部伸出一定長度的引線300而形成線尾。於該狀態下,線尾的前端部沿著X軸方向與氣炬131的電極相向,如圖所示,藉由對電極施加電壓從而形成熔融狀態的無空氣球(Free Air Ball,FAB)301。工具部120藉由工具驅動馬達142而可相對於頭部110於高度方向移動,可使線尾的前端部與氣炬131的電極相向,或者相對於襯墊電極321或導線電極322接近或遠離。高度方向如圖所示,為與平面方向正交的Z軸方向。The gas torch 131 is supported on the head 110 and includes a discharge electrode at the front end. During the first bonding to the pad electrode 321, a
第一攝像單元151為用以自Y軸方向拍攝形成於線尾的前端部的FAB301的攝像單元,支持於頭部110。第一攝像單元151包括:攝像元件,輸出圖像訊號;以及光學系統,使FAB301的像於攝像元件成像。第二攝像單元152為用以自X軸方向拍攝形成於線尾的前端部的FAB301的攝像單元,與第一攝像單元151同樣地支持於頭部110。第二攝像單元152亦包括:攝像元件,輸出圖像訊號;以及光學系統,使FAB301的像於攝像元件成像。以下的說明中,有時將第一攝像單元151與第二攝像單元152統稱為攝像部。The first imaging unit 151 is an imaging unit for imaging the
再者,XYZ座標系統為以頭部110的基準位置作為原點的空間座標系統。以下的圖式中,亦有時為了表示各要素的方向而一併記載同樣的座標軸。Furthermore, the XYZ coordinate system is a spatial coordinate system with the reference position of the head 110 as the origin. In the following drawings, the same coordinate axes may also be described in order to indicate the direction of each element.
圖2為打線接合機100的系統結構圖。打線接合機100的控制系統主要包含運算處理部170、記憶部180、輸入輸出器件190、氣炬131、線夾132、轉換器134、頭驅動馬達141、工具驅動馬達142、第一攝像單元151及第二攝像單元152。運算處理部170為進行打線接合機100的控制及程式的執行處理的處理器(中央處理器(Central Processing Unit,CPU))。處理器亦可為與特殊應用積體電路(Application Specific Integrated Circuit,ASIC)或圖形處理器(Graphics Processing Unit,GPU)等運算處理晶片協作的結構。運算處理部170讀出記憶於記憶部180的控制程式,執行與接合有關的各種處理。FIG. 2 is a system structure diagram of the wire bonding machine 100. The control system of the wire bonding machine 100 mainly includes a calculation processing unit 170, a memory unit 180, an input and output device 190, a gas torch 131, a wire clamp 132, a converter 134, a head drive motor 141, a tool drive motor 142, and a first camera unit 151 and the second camera unit 152. The arithmetic processing unit 170 is a processor (Central Processing Unit (CPU)) that controls the wire bonding machine 100 and executes programs. The processor can also be a structure that cooperates with computing processing chips such as Application Specific Integrated Circuit (ASIC) or Graphics Processing Unit (GPU). The arithmetic processing unit 170 reads the control program stored in the memory unit 180 and executes various processes related to the joining.
記憶部180為不揮發性的記憶媒體,例如包含硬碟驅動器(Hard Disk Drive,HDD)。記憶部180除了可記憶執行打線接合機100的控制或處理的程式以外,還可記憶用於控制或運算的各種參數值、函數、查找表(look-up table)等。輸入輸出器件190例如包含鍵盤、滑鼠、顯示監視器,為受理用戶進行的菜單操作或向用戶提示資訊的器件。例如,運算處理部170亦可將FAB的測量結果與所拍攝的圖像一起顯示於作為輸入輸出器件190之一的顯示監視器。The memory unit 180 is a non-volatile memory medium, including, for example, a hard disk drive (HDD). The memory unit 180 may store not only programs for executing control or processing of the wire bonding machine 100 , but also various parameter values, functions, look-up tables, etc. used for control or calculation. The input/output device 190 includes, for example, a keyboard, a mouse, and a display monitor, and is a device that accepts menu operations performed by the user or prompts information to the user. For example, the arithmetic processing unit 170 may display the measurement result of the FAB together with the captured image on a display monitor that is one of the input and output devices 190 .
氣炬131若自運算處理部170接收放電指示訊號,則執行向電極的電壓施加。若執行向電極的電壓施加,則於電極與線尾之間產生電弧放電,於線尾的前端部形成FAB。線夾132於自運算處理部170接收夾緊指示訊號的期間中閉合手。若解除夾緊指示訊號,則將手打開。引線300於手閉合的期間中,不自瓷嘴133伸出或不向瓷嘴133拉回。轉換器134若接收來自運算處理部170的激振訊號,則使振子振動。由轉換器134所致的超音波振動有助於引線300的接合。When the gas torch 131 receives the discharge instruction signal from the arithmetic processing unit 170, it executes voltage application to the electrodes. When the voltage is applied to the electrode, arc discharge occurs between the electrode and the wire tail, and FAB is formed at the tip of the wire tail. The wire clamp 132 closes the hand while receiving the clamping instruction signal from the arithmetic processing unit 170 . If the clamping indication signal is released, open the hand. When the hand is closed, the
頭驅動監視器141自運算處理部170接收驅動訊號,使頭部110於平面方向移動。工具驅動馬達142自運算處理部170接收驅動訊號,使工具部120於高度方向移動。The head drive monitor 141 receives a drive signal from the arithmetic processing unit 170 to move the head 110 in the plane direction. The tool driving motor 142 receives a driving signal from the processing unit 170 to move the tool unit 120 in the height direction.
第一攝像單元151自運算處理部170接收拍攝要求訊號而執行拍攝,將攝像元件輸出的第一圖像以圖像訊號的形式向運算處理部170發送。同樣地,第二攝像單元152自運算處理部170接收拍攝要求訊號而執行拍攝,將攝像元件輸出的第二圖像以圖像訊號的形式向運算處理部170發送。The first imaging unit 151 receives the imaging request signal from the arithmetic processing unit 170, performs imaging, and sends the first image output by the imaging element to the arithmetic processing unit 170 in the form of an image signal. Similarly, the second imaging unit 152 receives the imaging request signal from the arithmetic processing unit 170, performs imaging, and sends the second image output by the imaging element to the arithmetic processing unit 170 in the form of an image signal.
運算處理部170亦承擔作為功能運算部的作用,根據控制程式所指示的處理來執行各種運算。運算處理部170作為測量部171、調整部172及驅動控制部173發揮功能。測量部171向第一攝像單元151及第二攝像單元152發送拍攝要求訊號,獲取第一圖像的圖像訊號及第二圖像的圖像訊號,測量FAB相對於引線300的中心軸的偏移。調整部172基於由測量部171所得的測量結果來調整氣炬131的放電條件。驅動控制部173生成對頭驅動馬達141進行驅動的驅動訊號、及對工具驅動馬達142進行驅動的驅動訊號,向各馬達發送。The arithmetic processing unit 170 also plays a role as a functional arithmetic unit and performs various operations according to processing instructed by the control program. The arithmetic processing unit 170 functions as the measurement unit 171 , the adjustment unit 172 , and the drive control unit 173 . The measurement unit 171 sends a shooting request signal to the first camera unit 151 and the second camera unit 152, acquires the image signal of the first image and the image signal of the second image, and measures the deviation of the FAB relative to the central axis of the
圖3為說明FAB的觀察狀況的圖。如上文所述,自瓷嘴133的前端部伸出引線300而形成線尾,該線尾的前端部自X軸正方向受到氣炬131的電弧放電,形成FAB301。FIG. 3 is a diagram explaining the observation status of FAB. As mentioned above, the
關於FAB301,視氣炬131的放電條件不同,有時FAB301相對於引線300的中心軸偏移地形成。若其偏移量超過容許量,則引起第一次接合時形成於襯墊電極321上的壓接球的偏芯,導致襯墊電極321間的短路等不良。FAB301的偏移是引線300的組成或直徑、線尾長、環境溫度等多種要素影響而產生。因此,較佳為於實際執行連線作業的條件下形成FAB301,評價其偏移量是否超過容許量。另外,即便於偏移量超過容許量的情形時,有時亦可藉由調整氣炬131的放電條件從而抑制於容許量以下。因此,本實施形態的打線接合機100拍攝實際形成的FAB301並測量其偏移。Regarding the
第一攝像單元151以自Y軸方向拍攝包含FAB301的線尾的方式設置,所述Y軸方向即與作為自瓷嘴133伸出線尾的伸出方向的Z軸方向、及作為電弧放電的放電方向的X軸方向正交的方向。第一攝像單元151生成自Y軸方向拍攝線尾所得的第一圖像的圖像訊號。本實施形態中,第一攝像單元151以自Y軸負方向拍攝線尾的方式設置,但亦可以自Y軸正方向拍攝的方式設置。FAB301的偏移於放電方向容易產生,故而可根據自與放電方向正交的方向拍攝的第一圖像來精確地掌握其偏移。The first imaging unit 151 is arranged to capture the line tail including the
第二攝像單元152以自X軸方向拍攝包含FAB301的線尾的方式設置。第二攝像單元152生成自X軸方向拍攝線尾所得的第二圖像的圖像訊號。本實施形態中,第二攝像單元152以自X軸負方向拍攝線尾的方式設置,但亦可以自X軸正方向拍攝線尾的方式設置。若除了第一圖像以外將第二圖像亦作為測量的對象,則可自正交的兩方向精確地掌握FAB301的偏移。The second camera unit 152 is arranged to capture the line tail including the
本實施形態的攝像部包含第一攝像單元151及第二攝像單元152此兩個攝像單元,但亦可進一步增設攝像單元。此時,增設的攝像單元較理想為以下述方式設置,即:可自與作為伸出線尾的伸出方向的Z軸正交的方向拍攝線尾。The imaging unit of this embodiment includes two imaging units, a first imaging unit 151 and a second imaging unit 152 , but further imaging units may be added. At this time, it is preferable that the additional imaging unit is installed in such a manner that the line tail can be photographed from a direction orthogonal to the Z-axis, which is the direction in which the line tail extends.
測量部171根據所獲取的圖像來測量FAB301的偏移。此處,使用圖對兩個測量方法分別進行說明。The measurement unit 171 measures the offset of the
圖4為說明測量FAB301的偏移的第一方法的圖。測量部171測量作為FAB301相對於引線300的中心軸向一個方向的突起量的第一突出量、及作為向與該一個方向相反的另一方向的突起量的第二突出量。FIG. 4 is a diagram illustrating a first method of measuring the offset of
圖4左圖表示自第一攝像單元151獲取的第一圖像。第一圖像中,第一突出量為自引線300的表面(相對於引線300的中心軸向X軸正側以引線300的半徑程度偏移而得的邊界線)至FAB301的X軸正側的頂點為止的距離D
1。同樣地,第二突出量為自引線300的表面(相對於引線300的中心軸向X軸負側以引線300的半徑程度偏移而得的邊界線)至FAB301的X軸負側的頂點為止的距離D
2。例如,若設偏芯評價值=1.0-Min(D
1,D
2)/Max(D
1,D
2),於Max(D
1,D
2)=D
1時賦予「-」符號,於Max(D
1,D
2)=D
2時賦予「+」符號,則可表示向哪一側以何種程度偏移。若D
1=D
2,則偏芯評價值成為0,可知相對於第一圖像的拍攝方向並無偏移。
The left diagram of FIG. 4 shows the first image acquired from the first imaging unit 151. In the first image, the first protruding amount is from the surface of the lead 300 (the boundary line offset from the central axis of the
圖4右圖表示自第二攝像單元152獲取的第二圖像。第二圖像中,第一突出量為自引線300的表面(相對於引線300的中心軸向Y軸負側以引線300的半徑程度偏移而得的邊界線)至FAB301的Y軸負側的頂點為止的距離D
3。同樣地,第二突出量為自引線300的表面(相對於引線300的中心軸向Y軸正側以引線300的半徑程度偏移而得的邊界線)至FAB301的Y軸正側的頂點為止的距離D
4。同樣地,若設偏芯評價值=1.0-Min(D
3,D
4)/Max(D
3,D
4),於Max(D
3,D
4)=D
3時賦予「-」符號,於Max(D
3,D
4)=D
4時賦予「+」符號,則可表示向哪一側以何種程度偏移。若D
3=D
4,則偏芯評價值成為0,可知相對於第二圖像的拍攝方向並無偏移。
The right diagram of FIG. 4 shows the second image acquired from the second camera unit 152. In the second image, the first protruding amount is from the surface of the lead 300 (the boundary line offset from the central axis of the
再者,穿插於瓷嘴133的實際的引線300的直徑已知,故而可根據圖像上的引線300的寬度來算出每一像素的實際距離。藉此,可由圖像上的距離(像素數)變換為實際距離。Furthermore, the diameter of the
圖5為說明測量FAB301的偏移的第二方法的圖。測量部171測量FAB301的中心相對於引線300的中心軸的偏位量。FIG. 5 is a diagram illustrating a second method of measuring the offset of
圖5左圖表示自第一攝像單元151獲取的第一圖像。第一圖像中,偏位量為自FAB301的中心軸至FAB310的中心C
X為止的距離D
X。例如,若設偏芯評價值=D
X,於C
X存在於較中心軸更靠X軸正側時賦予「-」符號,於C
X存在於較中心軸更靠X軸負側時賦予「+」符號,則可表示向哪一側以何種程度偏移。若D
X=0,則偏芯評價值成為0,可知相對於第一圖像的拍攝方向並無偏移。
The left diagram of FIG. 5 shows the first image acquired from the first imaging unit 151. In the first image, the offset amount is the distance D X from the central axis of
圖5右圖表示自第二攝像單元152獲取的第二圖像。第二圖像中,偏位量為自FAB301的中心軸至FAB310的中心C Y為止的距離D Y。例如,若設偏芯評價值=D Y,於C Y存在於較中心軸更靠Y軸負側時賦予「-」符號,於C Y存在於較中心軸更靠Y軸正側時賦予「+」符號,則可表示向哪一側以何種程度偏移。若D Y=0,則偏芯評價值成為0,可知相對於第二圖像的拍攝方向並無偏移。關於由圖像上的距離(像素數)變換為實際距離,與圖4的情形相同。 The right diagram of FIG. 5 shows the second image acquired from the second imaging unit 152 . In the second image, the offset amount is the distance D Y from the central axis of FAB301 to the center C Y of FAB310. For example, assuming that the eccentricity evaluation value = D Y , a "-" sign is assigned when C Y exists on the negative side of the Y-axis relative to the central axis, and a "-" sign is assigned when C Y exists on the positive side of the Y-axis relative to the central axis. +" symbol can indicate which side and to what extent it is offset. If D Y =0, the eccentricity evaluation value becomes 0, indicating that there is no deviation with respect to the shooting direction of the second image. Regarding the conversion from the distance on the image (number of pixels) to the actual distance, the situation is the same as in Figure 4.
測量部171進行的FAB310的偏芯測量可組入至各種實際執行連線作業的製造步驟。此處,使用圖對3個實施例分別進行說明。The eccentricity measurement of the FAB 310 performed by the measurement unit 171 can be incorporated into various manufacturing steps that actually perform wiring operations. Here, three embodiments will be described using drawings.
圖6為說明包含本實施形態的FAB的偏芯測量的、第一實施例的處理順序的流程圖。第一實施例中,於執行連線作業之前,為了以形成滿足基準的FAB的方式決定氣炬131的放電條件,而進行FAB的偏芯測量。圖示的流程例如於執行連線作業之前的準備時間點開始。FIG. 6 is a flowchart illustrating the processing procedure of the first embodiment including the eccentricity measurement of the FAB according to this embodiment. In the first embodiment, before performing the wiring operation, in order to determine the discharge conditions of the gas torch 131 in order to form a FAB that satisfies the reference, the eccentricity measurement of the FAB is performed. The process shown in the figure starts, for example, at a preparation time point before executing the connection operation.
調整部172於步驟S111中,經由輸入輸出器件190受理與電炬131的放電條件有關的初始設定的輸入。調整部172不限於利用輸入輸出器件190的輸入,亦可使用預定的初始設定。驅動控制部173於步驟S112中,自引線供給部伸出引線300,自瓷嘴133的前端部伸出引線300而形成線尾。此時,若所形成的線尾的前端部不與氣炬131的電極相向,則以相向的方式驅動工具驅動馬達142而調整線尾的高度。In step S111 , the adjustment unit 172 receives an input of the initial settings regarding the discharge conditions of the torch 131 via the input/output device 190 . The adjustment unit 172 is not limited to using input from the input/output device 190 and may use predetermined initial settings. In step S112, the drive control unit 173 extends the
調整部172於步驟S113中,依據所設定的放電條件對氣炬131的電極施加電壓,於線尾的前端部形成FAB301。測量部171於步驟S114中,向第一攝像單元151及第二攝像單元152分別發送拍攝要求訊號而使其執行拍攝處理,獲取拍攝包含FAB301的線尾所得的第一圖像及第二圖像。繼而,步驟S115中,藉由使用圖4、圖5所說明的任一測量方法根據第一圖像及第二圖像來測量FAB301相對於引線300的中心軸的偏移。使用哪一測量方法可為事先可由操作員選擇,亦可根據半導體晶片320等的設定而自動選擇。或者,亦可使控制程式僅與任一個測量方法對應。In step S113, the adjustment unit 172 applies a voltage to the electrode of the gas torch 131 according to the set discharge conditions to form the
測量部171於步驟S116中,判定測量結果是否滿足預先設定的基準。基準例如是作為不會引起襯墊電極321間的短路等不良狀況的、偏芯評價值的容許量而規定。若作為測量結果的偏芯評價值超過容許量,則進入步驟S117。若收容於容許量,則視為能以經設定、調整的放電條件形成適當的FAB,結束一系列的準備作業,以待機至執行對半導體晶片320的連線作業為止。In step S116, the measurement unit 171 determines whether the measurement result satisfies a preset standard. The standard is, for example, defined as an allowable amount of eccentricity evaluation value that does not cause a short circuit or other defect between the pad electrodes 321 . If the eccentricity evaluation value as the measurement result exceeds the allowable amount, the process proceeds to step S117. If it is within the allowable amount, it is considered that an appropriate FAB can be formed under the set and adjusted discharge conditions, and a series of preparation operations are completed, and the process waits until the wiring operation on the semiconductor chip 320 is performed.
於進入步驟S117的情形時,運算處理部170使所形成的FAB301接著於虛設的電極墊等,閉合線夾132而切斷引線300。繼而,於步驟S118中,調整部172考慮由測量部171所得的測量結果,調整放電條件。即,於向一定方向偏芯的情形時,考慮FAB表面的冷卻速度的差異,變更火花電流、電流傾斜時間、氣體流量等,於偏芯方向隨機改變的情形時,考慮振動的影響而加入火花前延遲時間等,根據偏移的大小或方向來變更放電條件的參數。放電條件的調整完成後,為了評價由該調整後的放電條件形成的FAB301,返回步驟S112,繼續一系列的處理。When proceeding to step S117 , the arithmetic processing unit 170 connects the formed
若經由此種準備作業而進入半導體晶片320的連線作業,則可自連線作業的初始階段開始穩定地形成FAB。If the wiring work of the semiconductor wafer 320 is started through such preparation work, the FAB can be stably formed from the initial stage of the wiring work.
圖7為說明包含本實施形態的FAB的偏芯測量的、第二實施例的處理順序的流程圖。第二實施例中,監視連線作業的執行中實際形成的FAB。圖示的流程是於對設置於平台220的基板330的各半導體晶片320開始連線作業的時間點開始。再者,關於與使用圖6所說明的各步驟相同的處理,藉由賦予相同的步驟編號,從而除了特別提及的情形以外省略其說明。7 is a flowchart illustrating the processing procedure of the second embodiment including the eccentricity measurement of the FAB according to this embodiment. In the second embodiment, the FAB actually formed during the execution of the connection job is monitored. The flow shown in the figure starts when the wiring operation is started for each semiconductor chip 320 provided on the substrate 330 of the platform 220 . In addition, the same process as that of each step explained using FIG. 6 is assigned the same step number, and the description thereof is omitted unless otherwise mentioned.
若開始流程,則步驟S111至步驟S116執行與圖6的對應步驟相同的處理。然而,此處形成的FAB301並非為了測量而試形成,而是實際接著於半導體晶片320的襯墊電極321。When the flow is started, steps S111 to S116 execute the same processing as the corresponding steps in FIG. 6 . However, the
測量部171於步驟S116中判斷為滿足基準後,進入步驟S121。驅動控制部173將所形成的FAB301接著於成為對象的襯墊電極321,執行第一次接合。此時,運算處理部170向轉換器134發送激振訊號等,執行伴隨第一次接合的控制。After determining that the criterion is satisfied in step S116, the measurement unit 171 proceeds to step S121. The drive control unit 173 adheres the formed
繼而,驅動控制部173於步驟S122中,使引線300向對應的導線電極322移動,執行第二次接合。此時,運算處理部170向轉換器134發送激振訊號等,執行伴隨第二次接合的控制。運算處理部170進入步驟S123,閉合線夾132而切斷引線300,進入步驟S124。Next, in step S122, the drive control unit 173 moves the
運算處理部170於步驟S124中,確認所有接合處理是否結束。若未結束,則為了執行剩餘的接合處理而回到步驟S112,繼續一系列的處理。若結束,則結束一系列的接合處理。In step S124, the arithmetic processing unit 170 confirms whether all joining processes have been completed. If it is not completed, the process returns to step S112 to continue a series of processes in order to execute the remaining joining process. If it ends, a series of joining processes ends.
若測量部171於步驟S116中判斷為不滿足基準,則進入步驟S125,驅動控制部173不使所形成的FAB301接著於成為對象的襯墊電極321,而是向既定位置退避。而且,運算處理部170例如執行發出警告音等警告處理,告知操作員中斷處理,中斷一系列的處理而結束。If the measurement unit 171 determines in step S116 that the standard is not satisfied, the process proceeds to step S125, and the drive control unit 173 does not cause the formed
若採用此種處理順序,則可將襯墊電極321間的短路等不良狀況防患於未然。If this processing sequence is adopted, problems such as short circuits between the pad electrodes 321 can be prevented before they occur.
圖8為說明包含本實施形態的FAB的偏芯測量的、第三實施例的處理順序的流程圖。第三實施例中,監視連線作業的執行中實際形成的FAB,並且於測量結果滿足一定條件的情形時,一方面繼續連線作業一方面調整放電條件。圖示的流程與圖7的流程同樣地,於對設置於平台220的基板330的各半導體晶片320開始連線作業的時間點開始。再者,關於與使用圖6、圖7所說明的各步驟相同的處理,藉由賦予相同的步驟編號,從而除了特別提及的情形以外省略其說明。FIG. 8 is a flowchart illustrating the processing procedure of the third embodiment including the eccentricity measurement of the FAB according to this embodiment. In the third embodiment, the FAB actually formed during the execution of the wiring operation is monitored, and when the measurement results meet certain conditions, the wiring operation is continued while the discharge conditions are adjusted. The flow shown in the figure is the same as the flow shown in FIG. 7 , and starts at the time when the wiring operation is started for each semiconductor chip 320 placed on the substrate 330 of the platform 220 . Incidentally, the same steps as those described using FIGS. 6 and 7 are assigned the same step numbers, and description thereof will be omitted unless otherwise mentioned.
若流程開始,則步驟S111至步驟S115執行與圖7的對應步驟相同的處理。若自步驟S115進入步驟S131,則測量部171判定測量結果是否滿足預先設定的第一基準。第一基準為於不滿足該第一基準的情形時,判斷為引起襯墊電極321間的短路等不良狀況的可能性高的基準,例如根據偏芯評價值來規定範圍。於測量結果滿足第一基準的情形時進入步驟S121,開始第一次接合。於測量結果不滿足第一基準的情形時進入步驟S125,執行退避及警告的處理,中斷一系列的處理而結束。If the flow starts, steps S111 to S115 execute the same processing as the corresponding steps in FIG. 7 . If the process proceeds from step S115 to step S131, the measurement unit 171 determines whether the measurement result satisfies a preset first criterion. The first criterion is a criterion that determines that there is a high possibility of causing a malfunction such as a short circuit between the pad electrodes 321 when the first criterion is not satisfied. For example, the range is defined based on the eccentricity evaluation value. When the measurement result meets the first criterion, step S121 is entered to start the first bonding. When the measurement result does not meet the first criterion, the process proceeds to step S125, where backoff and warning processes are executed, and a series of processes are interrupted and ended.
於進入步驟S121的情形時,直至步驟S123為止如上文所述般繼續處理。繼而,進入步驟S132後,測量部171判定步驟S115中測量的測量結果是否滿足第二基準。第二基準為於滿足該第二基準的情形時可評價為最適形狀的基準,設定有相較於第一基準而偏移更少的範圍。不滿足第二基準且滿足第一基準的狀況下,雖然直接繼續連線作業亦不會引起襯墊電極321間的短路等不良狀況,但有可能因某些契機而亦不滿足第一基準。因此,於測量部171於步驟S132中判定為不滿足第二基準的情形時,進入步驟S133,調整部172考慮測量結果而調整放電條件。即,根據偏移的大小或方向來變更放電條件的參數。然後,進入步驟S124。於測量部171於步驟S132中判定為滿足第二基準的情形時,跳過步驟S133,進入步驟S124。When entering step S121, the process continues as described above until step S123. Next, after proceeding to step S132, the measurement unit 171 determines whether the measurement result measured in step S115 satisfies the second criterion. The second standard is a standard that can be evaluated as the optimal shape when the second standard is satisfied, and a range with less deviation than the first standard is set. In a situation where the second criterion is not satisfied but the first criterion is satisfied, even if the wiring operation is continued directly without causing a short circuit between the pad electrodes 321 or other malfunctions, the first criterion may not be satisfied due to some circumstances. Therefore, when the measurement unit 171 determines in step S132 that the second criterion is not satisfied, the process proceeds to step S133, and the adjustment unit 172 adjusts the discharge conditions considering the measurement results. That is, the parameters of the discharge conditions are changed according to the magnitude or direction of the offset. Then, proceed to step S124. When the measurement unit 171 determines in step S132 that the second criterion is satisfied, step S133 is skipped and the process proceeds to step S124.
若採用此種處理順序,則可將襯墊電極321間的短路等不良狀況防患於未然,並且亦可繼續調整放電條件,故而可更為最適地執行連線作業。再者,於觀察如此般連續形成的FAB301的情形時,亦可掌握偏移的變化。調整部172亦可考慮此種變化而調整放電條件。另外,若準備根據所測量的偏芯評價值及由經調整的放電條件隨後形成的FAB301的偏移的學習資料而生成的、學習完畢模型,則調整部172亦可利用此種學習完畢模型來調整放電條件。於該情形時,亦可將藉由實際的連線作業所得的資料活用作為用於再學習的學習資料。If this processing sequence is adopted, problems such as short circuits between the pad electrodes 321 can be prevented before they occur, and the discharge conditions can be continuously adjusted, so that the wiring operation can be performed more optimally. Furthermore, by observing the condition of FAB301 formed continuously in this way, the change in offset can also be grasped. The adjustment unit 172 may also adjust the discharge conditions taking such changes into account. In addition, if a learned model generated based on the measured eccentricity evaluation value and the learning data of the offset of
以上說明的打線接合機100中,藉由第一攝像單元151及第二攝像單元152此兩個攝像單元來構成攝像部,但就簡化裝置的觀點而言,亦可由一個攝像單元構成攝像部。圖9為示意性地表示另一實施形態的打線接合機100'的要部的立體圖。對與打線接合機100同樣的結構標註相同符號,省略說明。In the wire bonding machine 100 described above, the imaging unit is composed of two imaging units, the first imaging unit 151 and the second imaging unit 152. However, from the viewpoint of simplifying the device, the imaging unit may be composed of one imaging unit. FIG. 9 is a perspective view schematically showing an essential part of a wire bonding machine 100' according to another embodiment. The same structures as those of the wire bonding machine 100 are denoted by the same symbols, and descriptions thereof are omitted.
打線接合機100'於下述方面與打線接合機100不同,即:攝像部由一個攝像單元151'構成;以及該攝像單元151'設置於架台210。於由一個攝像單元構成攝像部的情形時,較佳為如上文所述,以自與放電方向正交的方向拍攝包含FAB301的線尾的方式設置。打線接合機100'以自Y軸正方向拍攝線尾的方式包括攝像單元151',但亦可以自Y軸負方向拍攝線尾的方式包括該攝像單元151'。The wire bonding machine 100' is different from the wire bonding machine 100 in the following aspects: the imaging unit is composed of one imaging unit 151'; and the imaging unit 151' is installed on the stand 210. When the imaging unit is constituted by one imaging unit, it is preferable to set it so that the line
另外,若將攝像單元151'以支持於架台210的方式設置,則不伴隨頭部的動作而移動,故而可穩定地觀察線尾。然而,此時可拍攝線尾的空間有限,故而驅動控制部173需要以線尾位於該空間的方式驅動頭部110及工具部120。自該觀點而言,攝像單元支持於架台210的結構於實施所述第一實施例的情形時較佳。再者,亦可於架台210設置多個攝像單元,自兩個以上的方向觀察線尾。In addition, if the imaging unit 151' is installed so as to be supported on the stand 210, it will not move with the movement of the head, so that the end of the line can be observed stably. However, the space where the line tail can be photographed is limited at this time, so the drive control unit 173 needs to drive the head 110 and the tool part 120 so that the line tail is located in the space. From this point of view, the structure in which the camera unit is supported on the stand 210 is better when implementing the first embodiment. Furthermore, multiple camera units can also be installed on the stand 210 to observe the line end from more than two directions.
以上,作為打線接合裝置的一例,對打線接合機100進行了說明,但可適用本實施形態的測量FAB的偏移的方法或結構的接合裝置不限於以引線將兩個接合點連接的打線接合機100的例子。例如,亦可適用於在基板上的多個電極上分別形成凸塊的凸塊接合機。The wire bonding machine 100 has been described above as an example of the wire bonding device. However, the bonding device to which the method or structure of measuring the offset of the FAB according to the present embodiment is applicable is not limited to wire bonding in which two bonding points are connected with a wire. Machine 100 example. For example, it is also applicable to a bump bonding machine that forms bumps on a plurality of electrodes on a substrate.
100、100':打線接合機 110:頭部 120:工具部 131:氣炬 132:線夾 133:瓷嘴 134:轉換器 141:頭驅動馬達 142:工具驅動馬達 151:第一攝像單元 151':攝像單元 152:第二攝像單元 170:運算處理部 171:測量部 172:調整部 173:驅動控制部 180:記憶部 190:輸入輸出器件 210:架台 220:平台 300:引線 301:FAB(無空氣球) 320:半導體晶片 321:襯墊電極 322:導線電極 330:基板 C X、C Y:中心 D 1、D 2、D 3、D 4、D X、D Y:距離 S111~S118、S121~S125、S131~S133:步驟 100, 100': wire bonding machine 110: head 120: tool part 131: gas torch 132: wire clamp 133: porcelain nozzle 134: converter 141: head drive motor 142: tool drive motor 151: first camera unit 151' :Camera unit 152: Second camera unit 170: Computational processing unit 171: Measurement unit 172: Adjustment unit 173: Drive control unit 180: Memory unit 190: Input and output device 210: Stand 220: Platform 300: Lead wire 301: FAB (none air ball) 320: semiconductor wafer 321 : pad electrode 322 : wire electrode 330 : substrate C ~S125, S131~S133: Steps
圖1為示意性地表示本實施形態的打線接合機(wire bonder)的要部的立體圖。 圖2為打線接合機的系統結構圖。 圖3為說明FAB的觀察狀況的圖。 圖4為說明測量FAB的偏移的第一方法的圖。 圖5為說明測量FAB的偏移的第二方法的圖。 圖6為說明包含本實施形態的FAB測量的、第一實施例的處理順序的流程圖。 圖7為說明包含本實施形態的FAB測量的、第二實施例的處理順序的流程圖。 圖8為說明包含本實施形態的FAB測量的、第三實施例的處理順序的流程圖。 圖9為示意性地表示另一實施形態的打線接合機的要部的立體圖。 FIG. 1 is a perspective view schematically showing the main parts of a wire bonder according to this embodiment. Figure 2 is the system structure diagram of the wire bonding machine. FIG. 3 is a diagram explaining the observation status of FAB. FIG. 4 is a diagram illustrating a first method of measuring the offset of FAB. FIG. 5 is a diagram illustrating a second method of measuring the offset of FAB. FIG. 6 is a flowchart illustrating the processing procedure of the first embodiment including FAB measurement according to this embodiment. FIG. 7 is a flowchart illustrating the processing procedure of the second embodiment including FAB measurement of this embodiment. FIG. 8 is a flowchart illustrating the processing procedure of the third embodiment including FAB measurement according to this embodiment. FIG. 9 is a perspective view schematically showing an essential part of a wire bonding machine according to another embodiment.
100:打線接合機 100:Wire bonding machine
110:頭部 110:Head
120:工具部 120:Tool Department
131:氣炬 131: Gas torch
132:線夾 132:Cable clip
133:瓷嘴 133: porcelain mouth
134:轉換器 134:Converter
141:頭驅動馬達 141:Head drive motor
142:工具驅動馬達 142:Tool drive motor
151:第一攝像單元 151: First camera unit
152:第二攝像單元 152: Second camera unit
210:架台 210: Set up the platform
220:平台 220:Platform
300:引線 300:lead
301:FAB(無空氣球) 301:FAB (airless balloon)
320:半導體晶片 320:Semiconductor wafer
321:襯墊電極 321: Pad electrode
322:導線電極 322: Wire electrode
330:基板 330:Substrate
Claims (7)
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JPH0222833A (en) * | 1988-07-11 | 1990-01-25 | Kobe Steel Ltd | Formation of ball of composite bonding wire |
JPH08139124A (en) * | 1994-11-04 | 1996-05-31 | Nippon Steel Corp | Bonder |
JP2011146754A (en) * | 2007-01-15 | 2011-07-28 | Nippon Steel Materials Co Ltd | Bonding structure of bonding wire, and method for forming the bonding structure |
WO2017154453A1 (en) * | 2016-03-11 | 2017-09-14 | タツタ電線株式会社 | Bonding wire |
US20180090464A1 (en) * | 2015-03-31 | 2018-03-29 | Shinkawa Ltd. | Wire bonding apparatus and wire bonding method |
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JPS587992U (en) | 1981-07-09 | 1983-01-19 | 株式会社大崎精密工具製作所 | Service channel closure device for branch pipe removal |
JPS58199532A (en) * | 1982-05-17 | 1983-11-19 | Hitachi Ltd | Manufacture of wire with ball for ball bonding |
JP3192761B2 (en) * | 1992-06-17 | 2001-07-30 | 芝浦メカトロニクス株式会社 | Wire bonding method |
US6062462A (en) * | 1997-08-12 | 2000-05-16 | Kulicke And Soffa Investments, Inc. | Apparatus and method for making predetermined fine wire ball sizes |
JP4644294B2 (en) * | 2009-05-14 | 2011-03-02 | 株式会社新川 | Bonding apparatus and bonding method |
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2021
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- 2021-01-26 KR KR1020237027826A patent/KR20230133342A/en unknown
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JPH0222833A (en) * | 1988-07-11 | 1990-01-25 | Kobe Steel Ltd | Formation of ball of composite bonding wire |
JPH08139124A (en) * | 1994-11-04 | 1996-05-31 | Nippon Steel Corp | Bonder |
JP2011146754A (en) * | 2007-01-15 | 2011-07-28 | Nippon Steel Materials Co Ltd | Bonding structure of bonding wire, and method for forming the bonding structure |
US20180090464A1 (en) * | 2015-03-31 | 2018-03-29 | Shinkawa Ltd. | Wire bonding apparatus and wire bonding method |
WO2017154453A1 (en) * | 2016-03-11 | 2017-09-14 | タツタ電線株式会社 | Bonding wire |
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