TWI813286B - Acoustic wave device and fabrication method thereof - Google Patents

Acoustic wave device and fabrication method thereof Download PDF

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Publication number
TWI813286B
TWI813286B TW111117839A TW111117839A TWI813286B TW I813286 B TWI813286 B TW I813286B TW 111117839 A TW111117839 A TW 111117839A TW 111117839 A TW111117839 A TW 111117839A TW I813286 B TWI813286 B TW I813286B
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electrode
dielectric material
material portion
acoustic wave
dummy
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TW111117839A
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TW202345423A (en
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林詩猛
陳詩喆
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立積電子股份有限公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H03H9/02685—Grating lines having particular arrangements
    • H03H9/02724—Comb like grating lines
    • H03H9/02732—Bilateral comb like grating lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

An acoustic device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface of the piezoelectric substrate. The transducer includes a first electrode, a second electrode and a dielectric block. The first electrode extends along a first direction, and has a first end. The second electrode extends along the first direction, and has a second end. The first electrode and the second electrode are spaced apart from each other along a second direction. The dielectric block is disposed at the first end of the first electrode and is located on the surface of the piezoelectric substrate. The surface of the piezoelectric substrate includes a first electrode region in contact with the first electrode, and a dielectric block region in contact with the dielectric block, and a pressure across the dielectric block region is no less than a pressure across the first electrode region.

Description

聲波裝置及其製造方法Sonic device and method of making the same

本發明關於射頻通訊，特別是用於射頻通訊中的一種聲波裝置及其製造方法。The present invention relates to radio frequency communications, in particular to an acoustic wave device used in radio frequency communications and a manufacturing method thereof.

表面聲波(surface acoustic wave，SAW)裝置可用於電訊號與聲訊號的轉換及傳遞。表面聲波裝置具有諸多用途。舉例而言，SAW濾波器用以濾除雜訊及留下特定頻段的無線訊號，具有傳輸損耗小、抗電磁干擾性能佳、體積小的特性，因此被廣泛應用於各種通訊產品。然而現有的SAW濾波器會產生能量洩漏，造成品質因數下降。此外，表面聲波裝置亦可用作諧振器(resonator)。Surface acoustic wave (SAW) devices can be used for the conversion and transmission of electrical signals and acoustic signals. Surface acoustic wave devices have many uses. For example, SAW filters are used to filter out noise and retain wireless signals in specific frequency bands. They have the characteristics of low transmission loss, good anti-electromagnetic interference performance, and small size, so they are widely used in various communication products. However, existing SAW filters will produce energy leakage, resulting in a decrease in quality factor. In addition, surface acoustic wave devices can also be used as resonators.

本發明實施例提供一種聲波裝置，包含壓電基板及換能器。壓電基板具有表面。換能器設置在壓電基板的表面上，換能器包含第一電極、第二電極及介電材料部。第一電極沿第一方向延伸，具有第一末端。第二電極沿第一方向延伸，具有第二末端，第二電極與第一電極在第二方向上間隔設置。介電材料部設置於第一電極的第一末端處，且位於壓電基板的表面上。壓電基板的表面包含與第一電極接觸的第一電極區域，以及與介電材料部接觸的介電材料部區域，介電材料部區域受到的壓力不小於第一電極區域受到的壓力。An embodiment of the present invention provides an acoustic wave device, including a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface of the piezoelectric substrate, and the transducer includes a first electrode, a second electrode and a dielectric material part. The first electrode extends along the first direction and has a first end. The second electrode extends along the first direction and has a second end. The second electrode is spaced apart from the first electrode in the second direction. The dielectric material portion is disposed at the first end of the first electrode and is located on the surface of the piezoelectric substrate. The surface of the piezoelectric substrate includes a first electrode region in contact with the first electrode and a dielectric material region in contact with the dielectric material portion. The pressure experienced by the dielectric material region is not less than the pressure experienced by the first electrode region.

本發明實施例提供另一種聲波裝置的製造方法，包含提供壓電基板，該壓電基板具有第一表面。在該第一表面上形成導電層。使該導電層圖案化，以形成圖案化導電層，該圖案化導電層包含沿第一方向延伸的第一電極及第二電極。第一電極具有第一末端，且第二電極具有第二末端，該第二電極與該第一電極在該第二方向上間隔設置；該圖案化導電層還包含位於壓電基板的第一表面上且設置於第一電極之第一末端處的第一介電材料部。壓電基板的該第一表面包含與該第一電極接觸的第一電極區域及與第一介電材料部接觸的第一介電材料部區域，該第一介電材料部區域受到的壓力不小於該第一電極區域受到的壓力。Embodiments of the present invention provide another method for manufacturing an acoustic wave device, including providing a piezoelectric substrate, the piezoelectric substrate having a first surface. A conductive layer is formed on the first surface. The conductive layer is patterned to form a patterned conductive layer, which includes a first electrode and a second electrode extending along a first direction. The first electrode has a first end, and the second electrode has a second end. The second electrode is spaced apart from the first electrode in the second direction; the patterned conductive layer also includes a first surface located on the piezoelectric substrate. and a first portion of dielectric material disposed on the first end of the first electrode. The first surface of the piezoelectric substrate includes a first electrode region in contact with the first electrode and a first dielectric material region in contact with the first dielectric material portion. The first dielectric material portion region is not subject to pressure. is less than the pressure on the first electrode area.

第1圖係為本發明實施例中之一種聲波裝置的俯視圖。在一些實施例中，聲波裝置1可為表面聲波(surface acoustic wave，SAW)濾波器。例如，聲波裝置1可將來自天線的射頻訊號轉換為聲波，對聲波進行處理以產生濾波訊號，及輸出濾波訊號。射頻訊號及濾波訊號係為電性訊號。此處僅舉例說明SAW裝置1的用途，惟本發明不限於此，在其他實施例中，SAW裝置1亦可用於其他用途。Figure 1 is a top view of an acoustic wave device according to an embodiment of the present invention. In some embodiments, the acoustic wave device 1 may be a surface acoustic wave (SAW) filter. For example, the acoustic wave device 1 can convert a radio frequency signal from an antenna into an acoustic wave, process the acoustic wave to generate a filtered signal, and output the filtered signal. Radio frequency signals and filtered signals are electrical signals. The purpose of the SAW device 1 is only illustrated here, but the present invention is not limited thereto. In other embodiments, the SAW device 1 can also be used for other purposes.

在一些實施例中，聲波裝置1包含壓電基板10及設置在壓電基板10之表面101上的換能器(transducer)11。壓電基板10可包含基板及設置在基板上的壓電材料層。舉例而言，壓電基板10的基板可包含矽基板。壓電材料層可包含壓電單晶體、壓電多晶體（壓電陶瓷）、壓電聚合物、和壓電複合材料。舉例而言，壓電材料層可包含氧化鋅（ZnO）、氮化鋁（AlN）、鉭酸鋰(LiTaO3)、及其組合。在一些實施例中，換能器11可包含母線(bus bar)121及122、電極131至133、電極141至143、介電材料部151至153及介電材料部161至163。在一些實施例中，電極131至133、電極141至143、母線121、及母線122的材料包含金屬，其中金屬可選自以下至少一者：鉬(Mo)、銅(Cu)、鋁(Al)、金(Au)、鉑(Pt)、鎢(W)、及其組合。In some embodiments, the acoustic wave device 1 includes a piezoelectric substrate 10 and a transducer (transducer) 11 disposed on the surface 101 of the piezoelectric substrate 10 . The piezoelectric substrate 10 may include a substrate and a piezoelectric material layer disposed on the substrate. For example, the substrate of the piezoelectric substrate 10 may include a silicon substrate. The piezoelectric material layer may include piezoelectric single crystals, piezoelectric polycrystals (piezoelectric ceramics), piezoelectric polymers, and piezoelectric composite materials. For example, the piezoelectric material layer may include zinc oxide (ZnO), aluminum nitride (AlN), lithium tantalate (LiTaO3), and combinations thereof. In some embodiments, the transducer 11 may include bus bars 121 and 122, electrodes 131 to 133, electrodes 141 to 143, dielectric material portions 151 to 153, and dielectric material portions 161 to 163. In some embodiments, the materials of the electrodes 131 to 133, the electrodes 141 to 143, the bus bar 121, and the bus bar 122 include metal, wherein the metal may be selected from at least one of the following: molybdenum (Mo), copper (Cu), aluminum (Al ), gold (Au), platinum (Pt), tungsten (W), and combinations thereof.

如第1圖所示，母線121可沿方向D2延伸。電極131至133可分別具有末端131e至133e，及可從母線121沿方向D1分別延伸至末端131e至133e。相似地，母線122可沿方向D2延伸。電極141至143可分別具有末端141e至143e，及可從母線122沿方向D1分別延伸至末端141e至143e。電極141至143分別與電極131至133在方向D2上間隔設置，舉例而言，電極141與電極131在方向D2上係互相隔開。電極131至133可平行於電極141至143，且母線121可平行於母線122。母線121及電極131至133可形成第一組叉指(interdigital)結構，母線122及電極141至143可形成第二組叉指結構，第一組叉指結構及第二組叉指結構可沿方向D1呈叉指設置。在上述實施例中，方向D2可垂直於方向D1，且方向D1與方向D2皆平行於壓電基板10的表面101。惟本發明不限於此，在其他實施例中，方向D2與方向D1之間可形成非90度的夾角。As shown in FIG. 1 , the busbar 121 may extend in direction D2. The electrodes 131 to 133 may have terminal ends 131e to 133e, respectively, and may extend from the bus bar 121 to the terminal ends 131e to 133e, respectively, in the direction D1. Similarly, busbar 122 may extend in direction D2. The electrodes 141 to 143 may have terminal ends 141e to 143e, respectively, and may extend from the bus bar 122 along the direction D1 to the terminal ends 141e to 143e, respectively. The electrodes 141 to 143 are respectively spaced apart from the electrodes 131 to 133 in the direction D2. For example, the electrode 141 and the electrode 131 are spaced apart from each other in the direction D2. The electrodes 131 to 133 may be parallel to the electrodes 141 to 143, and the bus bar 121 may be parallel to the bus bar 122. The bus bar 121 and the electrodes 131 to 133 can form a first group of interdigital structures, the bus bar 122 and the electrodes 141 to 143 can form a second group of interdigital structures, and the first group of interdigital structures and the second group of interdigital structures can be formed along the Direction D1 is in an interdigital arrangement. In the above embodiment, the direction D2 may be perpendicular to the direction D1 , and both the direction D1 and the direction D2 are parallel to the surface 101 of the piezoelectric substrate 10 . However, the present invention is not limited thereto. In other embodiments, the direction D2 and the direction D1 may form an included angle other than 90 degrees.

在一些實施例中，在電極131至133的末端131e至133e與母線122的邊緣122e之間，可分別形成間隙21至23，各間隙21至23沿方向D1可具有相同或不同尺寸。相似地，在電極141至143的末端141e至143e與母線121的邊緣121e之間，可分別形成間隙31至33，各間隙31至33沿方向D1可具有相同或不同尺寸。舉例而言，沿方向D2，末端131e至133e可互相對齊，及/或末端141e至143e可互相對齊。In some embodiments, gaps 21 to 23 may be respectively formed between the ends 131e to 133e of the electrodes 131 to 133 and the edge 122e of the bus bar 122, and each gap 21 to 23 may have the same or different sizes along the direction D1. Similarly, gaps 31 to 33 may be respectively formed between the ends 141e to 143e of the electrodes 141 to 143 and the edge 121e of the bus bar 121, and each gap 31 to 33 may have the same or different sizes along the direction D1. For example, along the direction D2, the ends 131e to 133e may be aligned with each other, and/or the ends 141e to 143e may be aligned with each other.

在一些實施例中，SAW裝置1的換能器11可用作輸入換能器或輸出換能器。以輸入換能器為例，電訊號可由母線121/122輸入，經由壓電基板10及其上的電極131、141、132、142、133、及143轉換為聲訊號，聲訊號可沿方向D2傳播。在其他實施例中，換能器11亦可用作將聲訊號轉換為電訊號的輸出換能器。沿方向D2對齊的末端131e至133e以及沿方向D2對齊的末端141e至143e可用來界定聲訊號的有效傳導範圍。詳細而言，以第1圖所示方向為例，連接末端131e、132e、及133e的虛擬直線可為聲訊號有效傳導範圍的右邊界，連接末端141e、142e、及143e的虛擬直線可為聲訊號有效傳導範圍的左邊界。In some embodiments, the transducer 11 of the SAW device 1 may be used as an input transducer or an output transducer. Taking the input transducer as an example, the electrical signal can be input from the bus bar 121/122 and converted into an acoustic signal through the piezoelectric substrate 10 and the electrodes 131, 141, 132, 142, 133, and 143 on it. The acoustic signal can be along the direction D2 spread. In other embodiments, the transducer 11 can also be used as an output transducer for converting acoustic signals into electrical signals. The ends 131e to 133e aligned along the direction D2 and the ends 141e to 143e aligned along the direction D2 may be used to define an effective transmission range of the acoustic signal. Specifically, taking the direction shown in Figure 1 as an example, the virtual straight line connecting the ends 131e, 132e, and 133e can be the right boundary of the effective conduction range of the acoustic signal, and the virtual straight line connecting the ends 141e, 142e, and 143e can be the right boundary of the effective conduction range of the acoustic signal. The left boundary of the signal's effective transmission range.

在一些實施例中，SAW裝置1可以活塞(piston)模式運作，使能量不會或較少的經由電極131至133分別與母線122之間的間隙21至23、及/或經由電極141至143分別與母線121之間的間隙31至33洩漏。In some embodiments, the SAW device 1 can operate in a piston mode, so that no or less energy passes through the gaps 21 to 23 between the electrodes 131 to 133 and the bus bar 122 respectively, and/or through the electrodes 141 to 143 The gaps 31 to 33 between the busbar 121 and the busbar 121 respectively leak.

在一些實施例中，如第1圖所示，介電材料部151至153可位於壓電基板10的表面101上，且可分別設置於電極131至133的末端131e至133e處。進一步講，介電材料部151至153可分別至少部分的填充間隙21至23。舉例而言，介電材料部151設置於電極131的末端131e處，且至少部分的填充間隙21。在一些實施例中，介電材料部151至153的材料可包括矽氧化物(SiOx)、矽氮化物（SiNx）、及矽氮氧化物(SiON)中之一任意組合。例如，介電材料部151至153的材料可包括二氧化矽(SiO 2)、及/或氮化矽Si 3N 4。在一些實施例中，介電材料部151至153亦可包含半導體材料。 In some embodiments, as shown in FIG. 1 , the dielectric material portions 151 to 153 may be located on the surface 101 of the piezoelectric substrate 10 and may be disposed at the ends 131e to 133e of the electrodes 131 to 133 respectively. Furthermore, the dielectric material portions 151 to 153 may at least partially fill the gaps 21 to 23 respectively. For example, the dielectric material portion 151 is disposed at the end 131 e of the electrode 131 and at least partially fills the gap 21 . In some embodiments, the material of the dielectric material portions 151 to 153 may include any combination of one of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON). For example, the material of the dielectric material portions 151 to 153 may include silicon dioxide (SiO 2 ) and/or silicon nitride Si 3 N 4 . In some embodiments, the dielectric material portions 151 to 153 may also include semiconductor materials.

請參考第2圖，第2圖係為聲波裝置1沿切線2-2’的剖面圖。間隙21可形成於電極131之末端131e與母線122之邊緣122e之間，且介電材料部151可至少部分填充於間隙21。介電材料部151可與電極131的末端131e直接接觸，且未與母線122的邊緣122e直接接觸。如第2圖所示，壓電基板10的表面101可包含與電極131接觸的電極區域131a及與介電材料部151接觸的介電材料部區域151a。進一步講，表面101的電極區域131a可受到來自電極131的壓力，且介電材料部區域151a可受到來自介電材料部151的壓力。Please refer to Figure 2, which is a cross-sectional view of the sonic device 1 along the tangent line 2-2’. The gap 21 may be formed between the end 131e of the electrode 131 and the edge 122e of the bus bar 122, and the dielectric material portion 151 may at least partially fill the gap 21. The dielectric material portion 151 may be in direct contact with the end 131e of the electrode 131 and not in direct contact with the edge 122e of the bus bar 122. As shown in FIG. 2 , the surface 101 of the piezoelectric substrate 10 may include an electrode region 131 a in contact with the electrode 131 and a dielectric material portion region 151 a in contact with the dielectric material portion 151 . Furthermore, the electrode region 131a of the surface 101 may be subject to pressure from the electrode 131, and the dielectric material portion region 151a may be subject to pressure from the dielectric material portion 151.

在一些實施例中，電極131具有電極表面131s，介電材料部151具有介電表面151s，且母線122具有母線表面122s。舉例而言，相對於壓電基板10的表面101，介電表面151s可突出於或高於電極表面131s，且可進一步突出於或高於母線表面122s。在進一步的實施例中，介電材料部151的材料密度可小於電極131的材料密度。藉由設置介電材料部151，使得壓電基板10在介電材料部區域151a範圍內單位面積的受到的壓力不小於(例如，大於或等於)壓電基板10在電極區域131a範圍內單位面積受到的壓力。在一些實施例中，壓力的單位例如為帕斯卡(pa)，且壓力的方向不受限於第2圖中所示之從電極131/介電材料部151至壓電基板10的方向（亦即，自上而下的方向），在其他實施例中，壓力的方向亦可反之，例如從壓電基板10至電極131/介電材料部151的方向。類似的，介電材料部152至153設置可相似於介電材料部151，其解釋在此不再贅述。In some embodiments, electrode 131 has electrode surface 131s, dielectric material portion 151 has dielectric surface 151s, and busbar 122 has busbar surface 122s. For example, relative to the surface 101 of the piezoelectric substrate 10, the dielectric surface 151s may protrude from or be higher than the electrode surface 131s, and may further protrude from or be higher than the busbar surface 122s. In further embodiments, the material density of the dielectric material portion 151 may be less than the material density of the electrode 131 . By disposing the dielectric material portion 151, the pressure per unit area of the piezoelectric substrate 10 within the dielectric material portion region 151a is not less than (for example, greater than or equal to) the pressure per unit area of the piezoelectric substrate 10 within the electrode region 131a. pressure. In some embodiments, the unit of pressure is, for example, Pascal (pa), and the direction of the pressure is not limited to the direction from the electrode 131/dielectric material portion 151 to the piezoelectric substrate 10 as shown in Figure 2 (that is, , top-down direction). In other embodiments, the direction of the pressure can also be reversed, such as the direction from the piezoelectric substrate 10 to the electrode 131/dielectric material portion 151 . Similarly, the dielectric material portions 152 to 153 may be configured similarly to the dielectric material portion 151, and their explanation will not be repeated here.

在上述例示性實施例中，介電材料部在電極的末端處形成重量負載，於聲波裝置1運作時，重量負載可阻擋或抑制聲波能量沿方向D1的傳導（亦即，減小或停止聲訊號沿方向D1的傳導）。進一步講，在電極131之末端131e處設置介電材料部151，其中介電材料部151的材料密度小於電極131的材料密度，且介電材料部151的表面151s突出於電極131的表面131s，藉此可減少聲波能量在間隙21處的洩露，使得聲波能量較多的或全部的沿方向D2傳導，進而改善聲波裝置1的品質因數(quality factor，Q factor)。In the above exemplary embodiment, the dielectric material portion forms a weight load at the end of the electrode. When the acoustic wave device 1 is operating, the weight load can block or inhibit the conduction of the acoustic wave energy in the direction D1 (ie, reduce or stop the acoustic wave energy). Signal conduction along direction D1). Furthermore, a dielectric material portion 151 is provided at the end 131e of the electrode 131, wherein the material density of the dielectric material portion 151 is smaller than the material density of the electrode 131, and the surface 151s of the dielectric material portion 151 protrudes from the surface 131s of the electrode 131, This can reduce the leakage of sound wave energy at the gap 21 , so that more or all of the sound wave energy can be conducted along the direction D2 , thereby improving the quality factor (Q factor) of the sound wave device 1 .

第3圖係為介電材料部151的另一種設置方式的示意圖。如第3圖所示，介電材料部151可沿方向D1填滿間隙21。如第3圖所示，介電材料部151可與電極131的末端131e直接接觸，且可進一步與母線122的邊緣122e直接接觸。相較於第2圖，由於第3圖的介電材料部151填滿間隙21中更多的空間，其形成更重的重量負載，因此更能阻擋或抑制聲波能量沿方向D1的傳導，進而改善聲波裝置1的品質因數。Figure 3 is a schematic diagram of another arrangement manner of the dielectric material portion 151. As shown in FIG. 3 , the dielectric material portion 151 may fill the gap 21 along the direction D1. As shown in FIG. 3 , the dielectric material portion 151 may be in direct contact with the end 131 e of the electrode 131 , and may further be in direct contact with the edge 122 e of the bus bar 122 . Compared with Figure 2, since the dielectric material portion 151 in Figure 3 fills more space in the gap 21, it forms a heavier weight load, and therefore can better block or inhibit the conduction of the sound wave energy in the direction D1, thereby further Improve the quality factor of sonic device 1.

第4圖係為介電材料部151的另一種設置方式的示意圖。第4圖和第3圖的差異在於第4圖另包含鈍化層40，至少覆蓋於電極131的電極表面131s、介電材料部151的介電表面151s、及母線122的母線表面122s中至少一者上方。在此實施例中，表面101的電極區域131a可受到來自電極131及電極131上方之鈍化層40的壓力，且介電材料部區域151a可受到來自介電材料部151及介電材料部151上方之鈍化層40的壓力。此外，參考第1圖及第4圖，鈍化層40亦可至少覆蓋於電極141至143、介電材料部161至163、及母線121中至少一者上方。Figure 4 is a schematic diagram of another arrangement manner of the dielectric material portion 151. The difference between Figure 4 and Figure 3 is that Figure 4 further includes a passivation layer 40 covering at least one of the electrode surface 131s of the electrode 131, the dielectric surface 151s of the dielectric material portion 151, and the busbar surface 122s of the busbar 122. above. In this embodiment, the electrode region 131a of the surface 101 may be subjected to pressure from the electrode 131 and the passivation layer 40 above the electrode 131, and the dielectric material portion region 151a may be subjected to pressure from the dielectric material portion 151 and the dielectric material portion 151. the pressure of the passivation layer 40. In addition, referring to FIGS. 1 and 4 , the passivation layer 40 may also cover at least one of the electrodes 141 to 143 , the dielectric material portions 161 to 163 , and the bus bar 121 .

在第1圖所示的實施例中，介電材料部151至153沿方向D2的尺寸分別等於電極電極131至133沿方向D2的尺寸，惟本發明不限於此，在其他實施例中，介電材料部151至153沿方向D2的尺寸可分別小於或大於電極131至133沿方向D2的尺寸。In the embodiment shown in FIG. 1 , the dimensions of the dielectric material portions 151 to 153 along the direction D2 are respectively equal to the dimensions of the electrode electrodes 131 to 133 along the direction D2. However, the present invention is not limited thereto. In other embodiments, The sizes of the electrical material portions 151 to 153 along the direction D2 may be respectively smaller or larger than the sizes of the electrodes 131 to 133 along the direction D2.

第5圖係為本發明實施例中之另一種聲波裝置的俯視圖。參考第5圖，聲波裝置5和聲波裝置1的差別在於聲波裝置5中的介電材料部551至553沿方向D2的尺寸分別小於電極131至133沿方向D2的尺寸。第6圖係為本發明實施例中之另一種聲波裝置的俯視圖。參考第6圖，聲波裝置6和聲波裝置1的差別在於聲波裝置6中的介電材料部651至653沿方向D2的尺寸分別大於電極131至133沿方向D2的尺寸。舉例而言，介電材料部651沿方向D2的尺寸大於電極131沿方向D2的尺寸，且介電材料部651可接觸電極141。類似的，介電材料部661沿方向D2的尺寸大於電極141沿方向D2的尺寸，及介電材料部661可接觸電極131及132。相較於聲波裝置1及聲波裝置5，介電材料部651至653沿方向D2的尺寸較大，因此分別形成更重的重量負載，因此更能阻擋或抑制聲波能量沿方向D1的傳導，進而更加改善聲波裝置6的品質因數。Figure 5 is a top view of another sonic device according to an embodiment of the present invention. Referring to FIG. 5 , the difference between the acoustic wave device 5 and the acoustic wave device 1 is that the dimensions of the dielectric material portions 551 to 553 in the acoustic wave device 5 along the direction D2 are respectively smaller than the dimensions of the electrodes 131 to 133 along the direction D2. Figure 6 is a top view of another sonic device in an embodiment of the present invention. Referring to FIG. 6 , the difference between the acoustic wave device 6 and the acoustic wave device 1 is that the dimensions of the dielectric material portions 651 to 653 in the acoustic wave device 6 along the direction D2 are respectively larger than the dimensions of the electrodes 131 to 133 along the direction D2. For example, the size of the dielectric material portion 651 along the direction D2 is larger than the size of the electrode 131 along the direction D2, and the dielectric material portion 651 can contact the electrode 141. Similarly, the size of the dielectric material portion 661 along the direction D2 is larger than the size of the electrode 141 along the direction D2, and the dielectric material portion 661 can contact the electrodes 131 and 132 . Compared with the acoustic wave device 1 and the acoustic wave device 5 , the dimensions of the dielectric material portions 651 to 653 along the direction D2 are larger, thus forming a heavier weight load respectively, and therefore can better block or inhibit the conduction of the acoustic wave energy along the direction D1, and thus The quality factor of the sonic device 6 is further improved.

返回參考第1、5、及6圖，舉例而言，介電材料部161至163分別與電極141至143的配置關係類似於介電材料部151與電極131的配置關係，介電材料部561至563分別與電極141至143的配置關係類似於介電材料部551與電極131的配置關係，介電材料部661至663分別與電極141至143的配置關係類似於介電材料部651與電極131的配置關係，在此不加贅述。Referring back to Figures 1, 5, and 6, for example, the configuration relationship between the dielectric material portions 161 to 163 and the electrodes 141 to 143 is similar to the configuration relationship between the dielectric material portion 151 and the electrode 131. The dielectric material portion 561 The arrangement relationship between the dielectric material portion 551 and the electrode 131 is similar to the arrangement relationship between the dielectric material portion 551 and the electrode 131 , and the arrangement relationship between the dielectric material portion 661 and the electrodes 141 to 143 is similar to the arrangement relationship between the dielectric material portion 651 and the electrode The configuration relationship of 131 will not be described in detail here.

第7圖係為本發明實施例中之另一種聲波裝置7的俯視圖。聲波裝置7可包含壓電基板10及換能器71。聲波裝置7和聲波裝置1的差異在於換能器71可另包含偽電極171至173及偽電極181至183。偽電極171至173分別具有偽末端171e至173e，且偽電極171至173可從母線122沿方向D1分別延伸至偽末端171e至173e。類似的，偽電極181至183分別具有偽末端181e至183e，且偽電極181至183可從母線121沿方向D1分別延伸至偽末端181e至183e。在一些實施例中，偽電極171至173、及/或181至183的材料包含金屬，其中金屬可選自以下至少一者：鉬(Mo)、銅(Cu)、鋁(Al)、金(Au)、鉑(Pt)、鎢(W)、及其組合。Figure 7 is a top view of another acoustic wave device 7 in the embodiment of the present invention. The acoustic wave device 7 may include a piezoelectric substrate 10 and a transducer 71 . The difference between the acoustic wave device 7 and the acoustic wave device 1 is that the transducer 71 may further include dummy electrodes 171 to 173 and dummy electrodes 181 to 183 . The dummy electrodes 171 to 173 have dummy terminals 171e to 173e respectively, and the dummy electrodes 171 to 173 may extend from the bus bar 122 along the direction D1 to the dummy terminals 171e to 173e respectively. Similarly, the dummy electrodes 181 to 183 have dummy terminals 181e to 183e respectively, and the dummy electrodes 181 to 183 may extend from the bus bar 121 to the dummy terminals 181e to 183e respectively along the direction D1. In some embodiments, the material of the dummy electrodes 171 to 173 and/or 181 to 183 includes metal, wherein the metal can be selected from at least one of the following: molybdenum (Mo), copper (Cu), aluminum (Al), gold ( Au), platinum (Pt), tungsten (W), and combinations thereof.

在第7圖所示的實施例中，沿方向D1，偽電極171至173的偽末端171e至173e可分別與電極131至133的末端131e至133e對齊，類似的，偽電極181至183的偽末端181e至183e可分別與電極141至143的末端141e至143e對齊。進一步講，沿方向D2，偽末端171e至173e可互相對齊，及/或偽末端181e至183e可互相對齊。在聲波裝置7中，藉由設置偽電極171至173、及/或181至183，可進一步抑制聲訊號沿方向D1的洩漏，藉以提高聲波裝置7的品質因數。In the embodiment shown in FIG. 7 , along the direction D1, the dummy ends 171e to 173e of the dummy electrodes 171 to 173 may be aligned with the ends 131e to 133e of the electrodes 131 to 133 respectively. Similarly, the dummy ends 171e to 173e of the dummy electrodes 181 to 183 The ends 181e to 183e may be aligned with the ends 141e to 143e of the electrodes 141 to 143, respectively. Furthermore, along the direction D2, the dummy terminals 171e to 173e may be aligned with each other, and/or the dummy terminals 181e to 183e may be aligned with each other. In the acoustic wave device 7 , by providing the dummy electrodes 171 to 173 and/or 181 to 183 , the leakage of the acoustic signal along the direction D1 can be further suppressed, thereby improving the quality factor of the acoustic wave device 7 .

在第7圖所示實施例中，舉例而言，間隙21可形成於電極131的末端131e與偽電極171的偽末端171e之間。介電材料部751可至少部分填充於間隙21。進一步講，介電材料部751可沿方向D1填滿間隙，其中介電材料部751可與電極131的末端131e直接接觸，且可進一步與偽電極171的偽末端171e直接接觸。其他間隙22、23、31、32、及33類似於間隙21，其他介電材料部752、753、761、762、及763類似於介電材料部751，在此不加贅述。In the embodiment shown in FIG. 7 , for example, the gap 21 may be formed between the end 131 e of the electrode 131 and the dummy end 171 e of the dummy electrode 171 . The dielectric material portion 751 may at least partially fill the gap 21 . Furthermore, the dielectric material portion 751 can fill the gap along the direction D1, wherein the dielectric material portion 751 can directly contact the end 131e of the electrode 131, and can further directly contact the dummy end 171e of the dummy electrode 171. The other gaps 22, 23, 31, 32, and 33 are similar to the gap 21, and the other dielectric material portions 752, 753, 761, 762, and 763 are similar to the dielectric material portion 751, and will not be described again.

第8圖係為第7圖中之聲波裝置沿切線3-3’的剖面圖。相較於第3圖，第8圖的壓電基板10的表面101除了包含與電極131接觸的電極區域131a及與介電材料部751接觸的介電材料部區域751a之外，還包括與偽電極171接觸的偽電極區域171a。表面101的偽電極區域171a可受到來自偽電極171的壓力。在一些實施例中，偽電極171具有偽電極表面171s，相對於壓電基板10的表面101，介電表面751s可突出於或高於偽電極表面171s。進一步講，介電材料部751的材料密度可小於偽電極171的材料密度。藉由設置介電材料部751，使得壓電基板10在介電材料部區域751a範圍內單位面積的受到的壓力不小於(例如，大於或等於)壓電基板10在偽電極區域171a範圍內單位面積受到的壓力。類似的，介電材料部752至753設置可相似於介電材料部751，在此不再贅述。Figure 8 is a cross-sectional view of the sonic device in Figure 7 along the tangent line 3-3'. Compared with FIG. 3 , the surface 101 of the piezoelectric substrate 10 in FIG. 8 includes, in addition to the electrode region 131 a in contact with the electrode 131 and the dielectric material portion region 751 a in contact with the dielectric material portion 751 , the surface 101 of the piezoelectric substrate 10 in FIG. The dummy electrode area 171a contacted by the electrode 171. The dummy electrode area 171a of the surface 101 may be subject to pressure from the dummy electrode 171. In some embodiments, the dummy electrode 171 has a dummy electrode surface 171 s, and the dielectric surface 751 s may protrude beyond or be higher than the dummy electrode surface 171 s relative to the surface 101 of the piezoelectric substrate 10 . Furthermore, the material density of the dielectric material portion 751 may be smaller than the material density of the dummy electrode 171 . By disposing the dielectric material portion 751, the pressure per unit area of the piezoelectric substrate 10 within the dielectric material portion region 751a is no less than (for example, greater than or equal to) the pressure per unit area of the piezoelectric substrate 10 within the dummy electrode region 171a. The pressure on the area. Similarly, the dielectric material portions 752 to 753 may be configured similarly to the dielectric material portion 751, which will not be described again.

在上述例示性實施例中，藉由設置偽電極及介電材料部，可進一步抑制聲訊號沿方向D1的洩漏，藉以提高聲波裝置7的品質因數。In the above exemplary embodiment, by providing the dummy electrode and the dielectric material portion, the leakage of the acoustic signal along the direction D1 can be further suppressed, thereby improving the quality factor of the acoustic wave device 7 .

在一些實施例中，聲波裝置7可另包含鈍化層，至少覆蓋於電極131至133、介電材料部751至753、偽電極171至173、母線122、電極141至143、介電材料部761至763、偽電極181至183、及母線121其中至少一者上方。In some embodiments, the acoustic wave device 7 may further include a passivation layer, covering at least the electrodes 131 to 133, the dielectric material portions 751 to 753, the dummy electrodes 171 to 173, the bus bars 122, the electrodes 141 to 143, and the dielectric material portion 761 to 763, above at least one of the dummy electrodes 181 to 183, and the bus bar 121.

在聲波裝置1、5~7中，熟習此技藝者亦可依照本發明原則變更電極及/或偽電極的數目，以符合實際應用的需求。In the acoustic wave devices 1, 5-7, those skilled in the art can also change the number of electrodes and/or dummy electrodes according to the principles of the present invention to meet the needs of actual applications.

第9圖係為聲波裝置1、5~7之製造方法900的流程圖。製造方法900包括步驟S902至S908，用以製造聲波裝置1、5~7其中任一者。任何合理的步驟改變、順序或調整都落在本公開內容的範圍內。步驟S902至S908例示性解釋如下：Figure 9 is a flow chart of a manufacturing method 900 of the acoustic wave devices 1, 5-7. The manufacturing method 900 includes steps S902 to S908 for manufacturing any one of the acoustic wave devices 1, 5-7. Any reasonable variation, sequence, or adaptation of the steps falls within the scope of this disclosure. Steps S902 to S908 are illustratively explained as follows:

步驟S902:  提供壓電基板10；Step S902: Provide piezoelectric substrate 10;

步驟S904:  在壓電基板10的表面上形成導電層；Step S904: Form a conductive layer on the surface of the piezoelectric substrate 10;

步驟S906:  利用遮罩使導電層圖案化，以形成圖案化導電層，其中圖案化導電層可包含母線121、電極131、母線122、及電極141；Step S906: Pattern the conductive layer using a mask to form a patterned conductive layer, where the patterned conductive layer may include bus bars 121, electrodes 131, bus bars 122, and electrodes 141;

步驟S908:  在壓電基板10的表面上形成介電材料部151，其中介電材料部151形成於電極131的末端處，其中壓電基板10的表面包含與電極131接觸的電極區域131a及與介電材料部151接觸的介電材料部區域151a，且介電材料部區域151a受到的壓力不小於電極區域131a受到的壓力。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 Step S908: Form a dielectric material portion 151 on the surface of the piezoelectric substrate 10, wherein the dielectric material portion 151 is formed at the end of the electrode 131, wherein the surface of the piezoelectric substrate 10 includes an electrode region 131a in contact with the electrode 131 and an electrode region 131a in contact with the electrode 131. The dielectric material portion 151 contacts the dielectric material portion region 151a, and the pressure experienced by the dielectric material portion region 151a is not less than the pressure experienced by the electrode region 131a. The above are only preferred embodiments of the present invention, and all equivalent changes and modifications made in accordance with the patentable scope of the present invention shall fall within the scope of the present invention.

1, 5~7:聲波裝置1, 5~7: Sonic device

10:壓電基板10: Piezoelectric substrate

101:表面101:Surface

11, 51, 61, 71:換能器11, 51, 61, 71: Transducer

121及122:母線121 and 122: busbar

121e及122e:邊緣121e and 122e: Edge

122s:母線表面122s: Busbar surface

131至133, 141至143:電極131 to 133, 141 to 143: Electrode

131a:第一電極區域131a: first electrode area

131s:電極表面131s: Electrode surface

131e至133e, 141e至143e:末端131e to 133e, 141e to 143e: end

151至153, 161至163, 551至553, 561至563, 651至653, 661至663, 751至753, 761至763:介電材料部151 to 153, 161 to 163, 551 to 553, 561 to 563, 651 to 653, 661 to 663, 751 to 753, 761 to 763: Dielectric Materials Department

151a, 751a:介電材料部區域151a, 751a: Dielectric materials area

151s, 751s:介電表面151s, 751s: dielectric surface

171至173, 181至183:偽電極171 to 173, 181 to 183: dummy electrodes

171e至173e, 181e至183e:偽末端171e to 173e, 181e to 183e: pseudo-terminal

171a:偽電極區域171a: Pseudo electrode area

171s:偽電極表面171s: Pseudo electrode surface

21至23, 31至33:間隙21 to 23, 31 to 33: gap

40:鈍化層40: Passivation layer

900:製造方法900: Manufacturing method

S902至S908:步驟S902 to S908: steps

D1, D2, D3:方向D1, D2, D3: direction

第1圖係為本發明實施例中之一種聲波裝置的俯視圖。 第2圖係為第1圖中之聲波裝置沿切線2-2’的剖面圖。 第3圖係為第1圖中之介電材料部的另一種設置方式的示意圖。 第4圖係為第1圖中之介電材料部的另一種設置方式的示意圖。 第5圖係為本發明實施例中之另一種聲波裝置的俯視圖。 第6圖係為本發明實施例中之另一種聲波裝置的俯視圖。 第7圖係為本發明實施例中之另一種聲波裝置的俯視圖。 第8圖係為第7圖中之聲波裝置沿切線3-3’的剖面圖。 第9圖係為第1、5~7圖中之聲波裝置之製造方法的流程圖。 Figure 1 is a top view of an acoustic wave device according to an embodiment of the present invention. Figure 2 is a cross-sectional view of the acoustic wave device in Figure 1 along the tangent line 2-2'. Figure 3 is a schematic diagram of another arrangement of the dielectric material portion in Figure 1 . Figure 4 is a schematic diagram of another arrangement of the dielectric material portion in Figure 1. Figure 5 is a top view of another sonic device according to an embodiment of the present invention. Figure 6 is a top view of another sonic device in an embodiment of the present invention. Figure 7 is a top view of another sonic device according to an embodiment of the present invention. Figure 8 is a cross-sectional view of the sonic device in Figure 7 along the tangent line 3-3'. Figure 9 is a flow chart of the manufacturing method of the sonic device shown in Figures 1, 5 to 7.

1:聲波裝置 1: Sonic device

10:壓電基板 10: Piezoelectric substrate

101:表面 101:Surface

11:換能器 11:Transducer

121及122:母線 121 and 122: busbar

121e及122e:邊緣 121e and 122e: Edge

131至133,141至143:電極 131 to 133, 141 to 143: electrode

131e至133e,141e至143e:末端 131e to 133e, 141e to 143e: end

151至153,161至163:介電材料部 151 to 153, 161 to 163: Dielectric Materials Department

21至23,31至33:間隙 21 to 23, 31 to 33: gap

D1,D2,D3:方向 D1, D2, D3: direction

Claims (20)

一種聲波裝置，包含：一壓電基板，具有一第一表面；及一換能器，設置在該壓電基板的該第一表面上，該換能器包含：一第一電極，沿一第一方向延伸，具有一第一末端；一第二電極，沿該第一方向延伸，具有一第二末端，該第二電極與該第一電極在一第二方向上間隔設置；及一第一介電材料部，設置於該第一電極的該第一末端處，且位於該壓電基板的該第一表面上；其中，該壓電基板的該第一表面包含與該第一電極接觸的一第一電極區域，以及與第一介電材料部接觸的一第一介電材料部區域，該第一介電材料部區域受到的一壓力不小於該第一電極區域受到的一壓力。 An acoustic wave device includes: a piezoelectric substrate having a first surface; and a transducer disposed on the first surface of the piezoelectric substrate, the transducer including: a first electrode along a first surface Extending in one direction and having a first end; a second electrode extending along the first direction and having a second end, the second electrode being spaced apart from the first electrode in a second direction; and a first a dielectric material portion disposed at the first end of the first electrode and located on the first surface of the piezoelectric substrate; wherein the first surface of the piezoelectric substrate includes a portion in contact with the first electrode A first electrode region, and a first dielectric material region in contact with the first dielectric material portion. The first dielectric material region is subjected to a pressure that is not less than a pressure that the first electrode region is subjected to. 如請求項1所述之聲波裝置，其中該第一介電材料部沿該第二方向的一尺寸等於該第一電極沿該第二方向的一尺寸。 The acoustic wave device of claim 1, wherein a size of the first dielectric material portion along the second direction is equal to a size of the first electrode along the second direction. 如請求項1所述之聲波裝置，其中該第一介電材料部沿該第二方向的一尺寸大於該第一電極沿該第二方向的一尺寸，及該第一介電材料部接觸該第二電極。 The acoustic wave device of claim 1, wherein a size of the first dielectric material portion along the second direction is greater than a size of the first electrode along the second direction, and the first dielectric material portion contacts the Second electrode. 如請求項1所述之聲波裝置，其中該換能器另包含：一第一母線，沿該第二方向延伸，該第一電極從該第一母線延伸至該第一末端；及一第二母線，沿該第二方向延伸，該第二電極從該第二母線延伸至該第二 末端；其中在該第一電極與該第二母線之間形成一第一間隙，該第一介電材料部至少部分填充該第一間隙。 The acoustic wave device of claim 1, wherein the transducer further includes: a first busbar extending along the second direction, the first electrode extending from the first busbar to the first end; and a second second busbar extending along the second direction. The bus bar extends along the second direction, and the second electrode extends from the second bus bar to the second End; wherein a first gap is formed between the first electrode and the second bus bar, and the first dielectric material portion at least partially fills the first gap. 如請求項4所述之聲波裝置，其中該換能器另包含：一第一偽電極，從該第二母線開始沿該第一方向延伸，具有一第一偽末端；其中沿該第一方向，該第一偽電極的該第一偽末端與該第一電極的該第一末端對齊；該第一間隙形成於該第一電極的該第一末端與該第一偽電極的該第一偽末端之間；該第一表面包含該第一偽電極與該壓電基板接觸的一第一偽電極區域；及該第一介電材料部區域受到的壓力不小於該第一偽電極區域受到的壓力。 The acoustic wave device according to claim 4, wherein the transducer further includes: a first dummy electrode extending from the second bus bar along the first direction and having a first dummy end; wherein along the first direction , the first dummy end of the first dummy electrode is aligned with the first end of the first electrode; the first gap is formed between the first end of the first electrode and the first dummy end of the first dummy electrode. between the ends; the first surface includes a first dummy electrode region where the first dummy electrode is in contact with the piezoelectric substrate; and the pressure on the first dielectric material region is not less than the pressure on the first dummy electrode region. pressure. 如請求項5所述之聲波裝置，其中該第一介電材料部與該第一電極直接接觸。 The acoustic wave device of claim 5, wherein the first dielectric material portion is in direct contact with the first electrode. 如請求項6所述之聲波裝置，其中該第一介電材料部與該第一偽電極直接接觸。 The acoustic wave device of claim 6, wherein the first dielectric material portion is in direct contact with the first dummy electrode. 如請求項5所述之聲波裝置，其中該第一電極具有一第一電極表面；該第一介電材料部具有一第一介電表面；及相對於該壓電基板的該第一表面，該第一介電表面高於該第一電極表面。 The acoustic wave device of claim 5, wherein the first electrode has a first electrode surface; the first dielectric material portion has a first dielectric surface; and relative to the first surface of the piezoelectric substrate, The first dielectric surface is higher than the first electrode surface. 如請求項8所述之聲波裝置，其中該第二母線具有一第二母線表面；該第一偽電極具有第一偽電極表面；及相對於壓電基板的該第一表面，該第一介電表面高於該第一偽電極表面。 The acoustic wave device of claim 8, wherein the second bus bar has a second bus bar surface; the first dummy electrode has a first dummy electrode surface; and relative to the first surface of the piezoelectric substrate, the first dielectric The electrical surface is higher than the first dummy electrode surface. 如請求項1所述之聲波裝置，其中該第一介電材料部的一材料密度小於該第一電極的一材料密度。 The acoustic wave device of claim 1, wherein a material density of the first dielectric material portion is less than a material density of the first electrode. 如請求項1所述之聲波裝置，其中該換能器另包含：一第二介電材料部，設置於該第二電極的該第二末端處，且位於該壓電基板的該第一表面上；及該壓電基板的該第一表面還包含與該第二電極接觸的一第二電極區域，及與該第二介電材料部接觸的一第二介電材料部區域，其中該第二介電材料部區域受到的壓力不小於該第二電極區域受到的壓力。 The acoustic wave device of claim 1, wherein the transducer further includes: a second dielectric material portion disposed at the second end of the second electrode and located on the first surface of the piezoelectric substrate on; and the first surface of the piezoelectric substrate further includes a second electrode region in contact with the second electrode, and a second dielectric material portion region in contact with the second dielectric material portion, wherein the first The pressure experienced by the two dielectric material portion areas is not less than the pressure experienced by the second electrode area. 如請求項11所述之聲波裝置，其中該第二介電材料部沿該第二方向的一尺寸等於該第二電極沿該第二方向的一尺寸。 The acoustic wave device of claim 11, wherein a size of the second dielectric material portion along the second direction is equal to a size of the second electrode along the second direction. 如請求項11所述之聲波裝置，其中該第二介電材料部沿該第二方向的一尺寸大於該第二電極沿該第二方向的一尺寸，及該第二介電材料部接觸該第一電極。 The acoustic wave device of claim 11, wherein a size of the second dielectric material portion along the second direction is greater than a size of the second electrode along the second direction, and the second dielectric material portion contacts the first electrode. 如請求項11所述之聲波裝置，其中該換能器另包含：一第一母線，沿該第二方向延伸，該第一電極從該第一母線延伸至該第一 末端；及一第二母線，沿該第二方向延伸，該第二電極從該第二母線延伸至該第二末端；其中在該第二電極與該第一母線之間形成一第二間隙，該第二介電材料部至少部分填充該第二間隙。 The acoustic wave device according to claim 11, wherein the transducer further includes: a first bus bar extending along the second direction, and the first electrode extends from the first bus bar to the first end; and a second busbar extending along the second direction, the second electrode extending from the second busbar to the second end; wherein a second gap is formed between the second electrode and the first busbar, The second portion of dielectric material at least partially fills the second gap. 如請求項14所述之聲波裝置，其中該換能器另包含：一第二偽電極，從該第一母線開始沿該第一方向延伸，具有一第二偽末端；其中沿該第一方向，該第二偽電極的該第二偽末端與該第二電極的該第二末端對齊；該第二間隙形成於該第二電極的該第二末端與該第二偽電極的該第二偽末端之間；該第一表面包含該第二偽電極與該壓電基板接觸的一第二偽電極區域；及該第二介電材料部區域受到的壓力不小於該第二偽電極區域受到的壓力。 The acoustic wave device according to claim 14, wherein the transducer further includes: a second dummy electrode extending from the first bus bar along the first direction and having a second dummy end; wherein along the first direction , the second dummy end of the second dummy electrode is aligned with the second end of the second dummy electrode; the second gap is formed between the second end of the second electrode and the second dummy end of the second dummy electrode. between the ends; the first surface includes a second dummy electrode area where the second dummy electrode is in contact with the piezoelectric substrate; and the pressure on the second dielectric material portion area is not less than the pressure on the second dummy electrode area. pressure. 如請求項15所述之聲波裝置，另包含一鈍化層，至少覆蓋於該第一電極、該第一介電材料部、該第二母線、及該第一偽電極之一者上方，及至少覆蓋於該第二電極、該第二介電材料部、該第一母線、及該第二偽電極中之一者上方。 The acoustic wave device of claim 15, further comprising a passivation layer covering at least one of the first electrode, the first dielectric material portion, the second bus bar, and the first dummy electrode, and at least Covering one of the second electrode, the second dielectric material portion, the first bus bar, and the second dummy electrode. 如請求項11所述之聲波裝置，其中該第一介電材料部的一材料密度小於該第一電極的一材料密度，且該第二介電材料部的一材料密度小於該第二電極的一材料密度。 The acoustic wave device of claim 11, wherein a material density of the first dielectric material portion is less than a material density of the first electrode, and a material density of the second dielectric material portion is less than a material density of the second electrode. 1. Material density. 如請求項17所述之聲波裝置，其中：該第一介電材料部及該該第二介電材料部包含矽氧化物(SiOx)、矽氮化物(SiNx)及矽氮氧化物(SiON)中之一任意組合；及該第一電極、該第二電極、該第一母線、該第二母線的一材料包含金屬，該金屬選自以下至少一者：鉬(Mo)、銅(Cu)、鋁(Al)、金(Au)、鉑(Pt)、鎢(W)、及其組合。 The acoustic wave device according to claim 17, wherein: the first dielectric material part and the second dielectric material part include silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON) Any combination of any of them; and a material of the first electrode, the second electrode, the first bus bar, and the second bus bar includes a metal, and the metal is selected from at least one of the following: molybdenum (Mo), copper (Cu) , aluminum (Al), gold (Au), platinum (Pt), tungsten (W), and combinations thereof. 如請求項1所述之聲波裝置，其中該第二方向垂直於該第一方向。 The acoustic wave device of claim 1, wherein the second direction is perpendicular to the first direction. 一種聲波裝置的製造方法，包含：提供一壓電基板，該壓電基板具有一第一表面；在該第一表面上形成一導電層；使該導電層圖案化，以形成一圖案化導電層，該圖案化導電層包含：一第一電極，沿一第一方向延伸，具有一第一末端；一第二電極，沿該第一方向延伸，具有一第二末端，該第二電極與該第一電極在一第二方向上間隔設置；及一第一介電材料部，設置於該第一電極的該第一末端處，且位於該壓電基板的該第一表面上；其中，該壓電基板的該第一表面包含與該第一電極接觸的一第一電極區域，以及與第一介電材料部接觸的一第一介電材料部區域，該第一介電材料部區域受到的一壓力不小於該第一電極區域受到的一壓力。 A method of manufacturing an acoustic wave device, including: providing a piezoelectric substrate having a first surface; forming a conductive layer on the first surface; patterning the conductive layer to form a patterned conductive layer , the patterned conductive layer includes: a first electrode extending along a first direction and having a first end; a second electrode extending along the first direction and having a second end, and the second electrode is connected to the first end. The first electrodes are spaced apart in a second direction; and a first dielectric material portion is provided at the first end of the first electrode and located on the first surface of the piezoelectric substrate; wherein, the The first surface of the piezoelectric substrate includes a first electrode region in contact with the first electrode, and a first dielectric material region in contact with the first dielectric material portion, the first dielectric material portion region is affected by A pressure of is not less than a pressure on the first electrode area.
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TWI676351B (en) * 2018-12-07 2019-11-01 立積電子股份有限公司 Capacitor circuit and capacitive multiple filter
TW202011692A (en) * 2018-09-05 2020-03-16 立積電子股份有限公司 Bulk acoustic wave structure, bulk acoustic wave device, and manufacturing method thereof
TW202121838A (en) * 2018-09-05 2021-06-01 立積電子股份有限公司 Bulk acoustic wave device

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Publication number Priority date Publication date Assignee Title
TW202011692A (en) * 2018-09-05 2020-03-16 立積電子股份有限公司 Bulk acoustic wave structure, bulk acoustic wave device, and manufacturing method thereof
TW202121838A (en) * 2018-09-05 2021-06-01 立積電子股份有限公司 Bulk acoustic wave device
TWI676351B (en) * 2018-12-07 2019-11-01 立積電子股份有限公司 Capacitor circuit and capacitive multiple filter

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