TWI809979B - Low power consumption driver circuit for LED display driver chip, LED display driver chip and LED display device - Google Patents

Low power consumption driver circuit for LED display driver chip, LED display driver chip and LED display device Download PDF

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TWI809979B
TWI809979B TW111126158A TW111126158A TWI809979B TW I809979 B TWI809979 B TW I809979B TW 111126158 A TW111126158 A TW 111126158A TW 111126158 A TW111126158 A TW 111126158A TW I809979 B TWI809979 B TW I809979B
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pmos transistor
current
voltage
circuit
led display
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TW202404418A (en
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胡龍山
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大陸商北京集創北方科技股份有限公司
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一種用於LED 顯示驅動晶片之低功耗驅動級電路,其包括:一電流轉電壓電路,具有一第一PMOS電晶體以依一定電流源之電流在其閘極產生一控制電壓,其中,該第一PMOS電晶體之源極耦接一第一供應電壓,且其汲極被偏置在一定電壓;以及一電流輸出電路,具有一電壓轉電流單元,該電壓轉電流單元具有一通道可變之PMOS電晶體,其中,該通道可變之PMOS電晶體之源極耦接該第一供應電壓,閘極耦接該控制電壓,汲極被偏置在該定電壓,且該通道可變之PMOS電晶體係依複數個開關信號決定其通道寬度。A low-power drive stage circuit for LED display driver chips, which includes: a current-to-voltage circuit with a first PMOS transistor to generate a control voltage at its gate according to the current of a certain current source, wherein the The source of the first PMOS transistor is coupled to a first supply voltage, and its drain is biased at a certain voltage; and a current output circuit has a voltage-to-current unit, and the voltage-to-current unit has a channel variable A PMOS transistor, wherein the source of the channel variable PMOS transistor is coupled to the first supply voltage, the gate is coupled to the control voltage, the drain is biased at the constant voltage, and the channel variable The PMOS transistor system determines its channel width according to a plurality of switching signals.

Description

用於LED 顯示驅動晶片之低功耗驅動級電路、LED顯示驅動晶片及LED顯示裝置Low-power driver circuit for LED display driver chip, LED display driver chip and LED display device

本發明係有關於LED顯示驅動電路,特別是關於一種用於LED 顯示驅動晶片之低功耗驅動級電路。The invention relates to an LED display driving circuit, in particular to a low power consumption driving stage circuit for an LED display driving chip.

請參照圖1a,其繪示一現有LED顯示晶片之驅動級電路之電路圖。如圖1所示,該驅動級電路包含一PMOS電晶體10、一PMOS電晶體20及一放大器30以驅動一LED元件40,其中,PMOS電晶體20及放大器30係用以在PMOS電晶體10之汲極產生一定電壓V X,其值約等於一參考電壓V REF,以使PMOS電晶體10能精準地依一控制電壓V CNTL產生一輸出電流I OPlease refer to FIG. 1a, which shows a circuit diagram of a driver stage circuit of a conventional LED display chip. As shown in FIG. 1, the driver stage circuit includes a PMOS transistor 10, a PMOS transistor 20 and an amplifier 30 to drive an LED element 40, wherein the PMOS transistor 20 and the amplifier 30 are used in the PMOS transistor 10 The drain generates a certain voltage V X , which is approximately equal to a reference voltage V REF , so that the PMOS transistor 10 can accurately generate an output current I O according to a control voltage V CNTL .

為了節省功耗,通常希望PMOS電晶體10和PMOS電晶體20的通道壓降越小越好,因此,一般會將參考電壓V REF的值設置為AVDD-0.2V,AVDD為該驅動級電路的供應電壓。如此一來,放大器30的輸入電壓就是AVDD-0.2V,屬於高輸入電壓而需要NMOS作為放大器30的輸入級;另一方面,為了流過大電流,PMOS電晶體20的閘極電壓應盡可能的低以縮小PMOS電晶體20的尺寸,致使放大器30的輸出須提供大的擺幅(相對於參考地之擺幅)。為此,放大器30有兩種常用的架構,一為兩級式、一為疊接式。 In order to save power consumption, it is generally hoped that the channel voltage drop of the PMOS transistor 10 and the PMOS transistor 20 should be as small as possible. Therefore, the value of the reference voltage V REF is generally set to AVDD-0.2V, and AVDD is the driving stage circuit. supply voltage. In this way, the input voltage of the amplifier 30 is AVDD-0.2V, which is a high input voltage and requires NMOS as the input stage of the amplifier 30; on the other hand, in order to flow a large current, the gate voltage of the PMOS transistor 20 should be as low as possible. Low to reduce the size of the PMOS transistor 20, so that the output of the amplifier 30 must provide a large swing (with respect to the swing of the reference ground). For this reason, the amplifier 30 has two commonly used structures, one is a two-stage type, and the other is a cascaded type.

請參照圖1b,其繪示放大器30之一兩級式架構之電路圖。如圖1b所示,放大器30包含一輸入級及一輸出級,該輸入級包含一電流源(由NMOS電晶體33構成)、一差動輸入對(由NMOS電晶體31a、31b組成)及一主動負載(由PMOS電晶體32a、32b組成),且該輸出級包含串接於AVDD與該參考地之間之一PMOS電晶體34a及一NMOS電晶體34b以在其一輸出端OUT提供一大的輸出電壓擺幅。然而,為了做補償,輸出級的工作電流I3會大於輸入級的工作電流(I1、I2),致使該兩級式架構會消耗相當多的功率。Please refer to FIG. 1 b , which shows a circuit diagram of a two-stage structure of the amplifier 30 . As shown in FIG. 1b, the amplifier 30 includes an input stage and an output stage. The input stage includes a current source (composed of NMOS transistors 33), a differential input pair (composed of NMOS transistors 31a, 31b) and a Active load (composed of PMOS transistors 32a, 32b), and the output stage includes a PMOS transistor 34a and an NMOS transistor 34b connected in series between AVDD and the reference ground to provide a large output voltage swing. However, for compensation, the working current I3 of the output stage is greater than the working current (I1, I2) of the input stage, so that the two-stage architecture consumes a lot of power.

請參照圖1c,其繪示放大器30之一疊接式架構之電路圖。如圖1c所示,放大器30包含一輸入級及一輸出級,該輸入級包含一電流源(由NMOS電晶體36構成)及一差動輸入對(由NMOS電晶體35a、35b組成),且該輸出級包含串接於AVDD與該參考地之間之一疊接式主動負載(由PMOS電晶體37a、37b、38a及38b組成)及一對NMOS電晶體(39a、39b)以在其一輸出端OUT提供一大的輸出電壓擺幅。雖然該疊接式放大器之每一級的工作電流都不大,但卻需要6級工作電流(I1-I6,其中,I5及I6係用以產生偏置電壓VBP1及VBN1),其功耗也是很可觀。Please refer to FIG. 1 c , which shows a circuit diagram of a cascaded structure of the amplifier 30 . As shown in Figure 1c, the amplifier 30 includes an input stage and an output stage, the input stage includes a current source (formed by NMOS transistor 36) and a differential input pair (formed by NMOS transistors 35a, 35b), and The output stage includes a stacked active load (composed of PMOS transistors 37a, 37b, 38a, and 38b) connected in series between AVDD and the reference ground, and a pair of NMOS transistors (39a, 39b) in one of the The output terminal OUT provides a large output voltage swing. Although the operating current of each stage of the cascaded amplifier is not large, it requires 6 stages of operating current (I1-I6, wherein, I5 and I6 are used to generate bias voltages VBP1 and VBN1), and its power consumption is also very high. considerable.

值得一提的是,在一LED顯示器的應用中,LED顯示驅動晶片係以N個輸出通道對應驅動N列的LED單元,N為正整數,而當N很大時,該些輸出通道之驅動級電路中的放大器所合以消耗的功率就會非常大。It is worth mentioning that in the application of an LED display, the LED display driver chip uses N output channels to drive N columns of LED units, and N is a positive integer. When N is very large, the drive of these output channels The combined power consumed by the amplifiers in the stage circuit will be very large.

為解決上述的問題,本領域亟需一新穎的低功耗驅動級電路。In order to solve the above problems, there is an urgent need in the art for a novel low power consumption driver stage circuit.

本發明之主要目的在於揭露一種用於LED 顯示驅動晶片之低功耗驅動級電路,其可藉由取消電流輸出通道中之放大器而有效縮減晶片之功耗。The main purpose of the present invention is to disclose a low power consumption driving stage circuit for LED display driving chip, which can effectively reduce the power consumption of the chip by canceling the amplifier in the current output channel.

本發明之另一目的在於揭露一種LED顯示驅動晶片,其可藉由上述的低功耗驅動級電路有效縮減晶片面積及降低晶片之功耗。Another object of the present invention is to disclose an LED display driver chip, which can effectively reduce the chip area and power consumption of the chip by the above-mentioned low power consumption driver circuit.

本發明之又一目的在於揭露一種顯示裝置,其可藉由上述的低功耗驅動級電路有效縮減其LED驅動晶片之晶片面積及降低其功耗。Another object of the present invention is to disclose a display device, which can effectively reduce the chip area of its LED driver chip and reduce its power consumption through the above-mentioned low power consumption driving stage circuit.

為達前述目的,一種用於LED 顯示驅動晶片之低功耗驅動級電路乃被提出,其包括: 一電流轉電壓電路,具有一第一PMOS電晶體以依一定電流源之電流在其閘極產生一控制電壓,其中,該第一PMOS電晶體之源極耦接一第一供應電壓,且其汲極被偏置在一定電壓;以及 一電流輸出電路,具有一電壓轉電流單元,該電壓轉電流單元具有一通道可變之PMOS電晶體,其中,該通道可變之PMOS電晶體之源極耦接該第一供應電壓,閘極耦接該控制電壓,汲極被偏置在該定電壓,且該通道可變之PMOS電晶體係依複數個開關信號決定其通道寬度。 In order to achieve the aforementioned purpose, a low power consumption driver stage circuit for LED display driver chips is proposed, which includes: A current-to-voltage circuit has a first PMOS transistor to generate a control voltage at its gate according to the current of a certain current source, wherein the source of the first PMOS transistor is coupled to a first supply voltage, and its The drain is biased at a certain voltage; and A current output circuit has a voltage-to-current unit, and the voltage-to-current unit has a channel-variable PMOS transistor, wherein the source of the channel-variable PMOS transistor is coupled to the first supply voltage, and the gate is Coupled with the control voltage, the drain is biased at the constant voltage, and the variable-channel PMOS transistor system determines its channel width according to a plurality of switching signals.

在一實施例中,該電流轉電壓電路具有一第一偏壓電路,該第一偏壓電路具有串接於一第二供應電壓與一參考地之間之一第二PMOS電晶體及一第一電流源,以依該第一電流源之電流在該第二PMOS電晶體之閘極產生該定電壓。In one embodiment, the current-to-voltage circuit has a first bias circuit, the first bias circuit has a second PMOS transistor connected in series between a second supply voltage and a reference ground, and A first current source is used to generate the constant voltage at the gate of the second PMOS transistor according to the current of the first current source.

在一實施例中,該電流輸出電路具有一第二偏壓電路,該第二偏壓電路具有串接於該第二供應電壓與該參考地之間之一第三PMOS電晶體及一第二電流源,以依該第二電流源之電流在該第三PMOS電晶體之閘極產生該定電壓,該第三PMOS電晶體之通道長寬比等於該第二PMOS電晶體之通道長寬比,且該第二電流源之電流等於該第一電流源之電流。In one embodiment, the current output circuit has a second bias circuit, and the second bias circuit has a third PMOS transistor and a third PMOS transistor connected in series between the second supply voltage and the reference ground. The second current source is used to generate the constant voltage at the gate of the third PMOS transistor according to the current of the second current source, and the channel aspect ratio of the third PMOS transistor is equal to the channel length of the second PMOS transistor. width ratio, and the current of the second current source is equal to the current of the first current source.

在一實施例中,該第二供應電壓高於該第一供應電壓。In one embodiment, the second supply voltage is higher than the first supply voltage.

在一實施例中,該第二供應電壓等於該第一供應電壓,且該第二PMOS電晶體和該第三PMOS電晶體均為一原生PMOS電晶體。In one embodiment, the second supply voltage is equal to the first supply voltage, and both the second PMOS transistor and the third PMOS transistor are native PMOS transistors.

在一實施例中,該第二供應電壓等於該第一供應電壓,且該第二PMOS電晶體和該第三PMOS電晶體之本體各經一第二電流源耦接至該參考地。In one embodiment, the second supply voltage is equal to the first supply voltage, and bodies of the second PMOS transistor and the third PMOS transistor are respectively coupled to the reference ground through a second current source.

在一實施例中,該通道可變之PMOS電晶體具有多個第四PMOS電晶體,且該些第四PMOS電晶體係依該些開關信號決定其併接組態以決定所述的通道寬度。In one embodiment, the channel variable PMOS transistor has a plurality of fourth PMOS transistors, and the fourth PMOS transistor system determines its parallel configuration according to the switching signals to determine the channel width .

為達前述目的,本發明進一步提出一種LED顯示驅動晶片,其具有一偏壓電路及複數個輸出通道,該偏壓電路係用以偏壓該些輸出通道,其中,該偏壓電路及所述輸出通道係由前述之低功耗驅動級電路之該電流轉電壓電路及該電流輸出電路對應實現。To achieve the aforementioned purpose, the present invention further proposes an LED display driver chip, which has a bias circuit and a plurality of output channels, and the bias circuit is used to bias the output channels, wherein the bias circuit And the output channel is correspondingly implemented by the current-to-voltage circuit and the current output circuit of the aforementioned low-power consumption driver circuit.

為達前述目的,本發明進一步提出一種LED顯示裝置,其具有一LED陣列及用以驅動該LED陣列之前述之LED驅動晶片。To achieve the aforementioned purpose, the present invention further provides an LED display device, which has an LED array and the aforementioned LED driver chip for driving the LED array.

在可能的實施例中,該LED陣列可微一次毫米發光二極體陣列、一微發光二極體陣列或一量子點發光二極體陣列。In possible embodiments, the LED array can be a sub-millimeter LED array, a micro LED array or a quantum dot LED array.

為使 貴審查委員能進一步瞭解本發明之結構、特徵及其目的,茲附以圖式及較佳具體實施例之詳細說明如後。In order to enable your review committee members to further understand the structure, features and purpose of the present invention, drawings and detailed descriptions of preferred specific embodiments are hereby attached.

本發明的原理在於:藉由取消LED顯示驅動晶片之電流輸出通道中之放大器而有效縮減晶片之面積及功耗。The principle of the present invention is to effectively reduce the area and power consumption of the chip by canceling the amplifier in the current output channel of the LED display driver chip.

請參照圖2,其繪示本發明之用於LED 顯示驅動晶片之低功耗驅動級電路之一實施例的電路圖。如圖2所示,一低功耗驅動級電路100具有一電流轉電壓電路110及一電流輸出電路120以依複數個開關信號SW1~SWn產生一輸出電流I OPlease refer to FIG. 2 , which shows a circuit diagram of an embodiment of a low power consumption driver circuit for LED display driver chips of the present invention. As shown in FIG. 2 , a low power consumption driver circuit 100 has a current-to-voltage circuit 110 and a current output circuit 120 for generating an output current I O according to a plurality of switching signals SW1˜SWn.

電流轉電壓電路110具有一第一PMOS電晶體111以依一定電流源114所產生之參考電流I REF在其閘極產生一控制電壓V Y,其中,第一PMOS電晶體111之源極耦接一第一供應電壓AVDD,且其汲極被偏置在一定電壓V XThe current-to-voltage circuit 110 has a first PMOS transistor 111 to generate a control voltage V Y at its gate according to a reference current I REF generated by a certain current source 114, wherein the source of the first PMOS transistor 111 is coupled to A first supply voltage AVDD, and its drain is biased at a certain voltage V X .

電流輸出電路120具有一電壓轉電流單元121,電壓轉電流單元121具有一通道可變之PMOS電晶體,其中,該通道可變之PMOS電晶體之源極耦接第一供應電壓AVDD,閘極耦接控制電壓V Y,汲極被偏置在定電壓V X,且該通道可變之PMOS電晶體係依該些開關信號SW1~SWn決定其通道寬度。 The current output circuit 120 has a voltage-to-current unit 121, and the voltage-to-current unit 121 has a channel-variable PMOS transistor, wherein the source of the channel-variable PMOS transistor is coupled to the first supply voltage AVDD, and the gate Coupled with the control voltage V Y , the drain is biased at a constant voltage V X , and the variable-channel PMOS transistor system determines its channel width according to the switching signals SW1~SWn.

詳細而言,電流轉電壓電路110具有一第一偏壓電路,該第一偏壓電路具有串接於一第二供應電壓VDD與一參考地之間之一第二PMOS電晶體112及一第一電流源115,以依第一電流源115之電流在第二PMOS電晶體112之閘極產生定電壓V X,其中,V X約等於VDD-V TH,V TH為第二PMOS電晶體112之閾值電壓,亦即,第一電流源115之電流I1很小,致使第二PMOS電晶體112之源-閘壓差約等於V TH。另外,一PMOS電晶體113之通道係耦接於第一PMOS電晶體111與定電流源114之間,且其閘極耦接第二PMOS電晶體112之汲極以在第二PMOS電晶體112之汲極處產生一定電壓V Z1。如此,第二PMOS電晶體112之三端會看到三個定電壓(VDD、V X、V Z1)而將其通道電流鎖住,且PMOS電晶體113之三端會看到三個定電壓(V X、V Z1、V Y)而將其通道電流鎖住。 Specifically, the current-to-voltage circuit 110 has a first bias circuit, the first bias circuit has a second PMOS transistor 112 connected in series between a second supply voltage VDD and a reference ground, and A first current source 115 is used to generate a constant voltage V X at the gate of the second PMOS transistor 112 according to the current of the first current source 115, wherein V X is approximately equal to VDD-V TH , and V TH is the second PMOS transistor The threshold voltage of the crystal 112, that is, the current I1 of the first current source 115 is very small, so that the source-gate voltage difference of the second PMOS transistor 112 is approximately equal to V TH . In addition, the channel of a PMOS transistor 113 is coupled between the first PMOS transistor 111 and the constant current source 114, and its gate is coupled to the drain of the second PMOS transistor 112 so that the second PMOS transistor 112 A certain voltage V Z1 is generated at the drain. In this way, the three terminals of the second PMOS transistor 112 will see three constant voltages (VDD, V X , V Z1 ) to lock its channel current, and the three terminals of the PMOS transistor 113 will see three constant voltages (V X , V Z1 , V Y ) to lock its channel current.

另外,電流輸出電路120具有一第二偏壓電路,該第二偏壓電路具有串接於第二供應電壓VDD與該參考地之間之一第三PMOS電晶體122及一第二電流源124,以依第二電流源124之電流I1在第三PMOS電晶體122之閘極產生定電壓V X,其中,第三PMOS電晶體122之通道長寬比等於第二PMOS電晶體112之通道長寬比,且第二電流源124之電流等於第一電流源115之電流。另外,一PMOS電晶體123之源極耦接電壓轉電流單元121及第三PMOS電晶體122之閘極,PMOS電晶體123之閘極耦接第三PMOS電晶體122之汲極以在第三PMOS電晶體122之汲極處產生一定電壓V Z2。如此,第三PMOS電晶體122之三端會看到三個定電壓(VDD、V X、V Z2)而將其通道電流鎖住,且電壓轉電流單元121之三端將會與第一PMOS電晶體111之三端同樣看到三個定電壓(AVDD、V Y、V X)而使輸出電流I O精準地正比於參考電流I REFIn addition, the current output circuit 120 has a second bias circuit, the second bias circuit has a third PMOS transistor 122 connected in series between the second supply voltage VDD and the reference ground and a second current The source 124 is used to generate a constant voltage V X at the gate of the third PMOS transistor 122 according to the current I1 of the second current source 124, wherein the channel aspect ratio of the third PMOS transistor 122 is equal to that of the second PMOS transistor 112 channel aspect ratio, and the current of the second current source 124 is equal to the current of the first current source 115 . In addition, the source of a PMOS transistor 123 is coupled to the voltage-to-current unit 121 and the gate of the third PMOS transistor 122, and the gate of the PMOS transistor 123 is coupled to the drain of the third PMOS transistor 122 for the third PMOS transistor 122. The drain of the PMOS transistor 122 generates a certain voltage V Z2 . In this way, the three terminals of the third PMOS transistor 122 will see three constant voltages (VDD, V X , V Z2 ) to lock its channel current, and the three terminals of the voltage-to-current unit 121 will be connected to the first PMOS The three terminals of the transistor 111 also see three constant voltages (AVDD, V Y , V X ) so that the output current I O is precisely proportional to the reference current I REF .

另外,為極小化定電壓V X與第一供應電壓AVDD之壓差以降低電流輸出電路120之功耗,在可能的實施例中,第二供應電壓VDD可高於第一供應電壓AVDD;或第二供應電壓VDD可等於第一供應電壓AVDD,且第二PMOS電晶體112和第三PMOS電晶體122均為一原生PMOS電晶體;或者,如圖3所示,使第二供應電壓VDD等於第一供應電壓AVDD,第二PMOS電晶體112經一第電流源112a耦接至該參考地,且第三PMOS電晶體122之本體經另一電流源112a耦接至該參考地,其中,電流源112a提供定電流I2。 In addition, in order to minimize the voltage difference between the constant voltage V X and the first supply voltage AVDD to reduce the power consumption of the current output circuit 120, in a possible embodiment, the second supply voltage VDD may be higher than the first supply voltage AVDD; or The second supply voltage VDD can be equal to the first supply voltage AVDD, and the second PMOS transistor 112 and the third PMOS transistor 122 are both native PMOS transistors; or, as shown in FIG. 3, the second supply voltage VDD is equal to The first supply voltage AVDD, the second PMOS transistor 112 is coupled to the reference ground through a first current source 112a, and the body of the third PMOS transistor 122 is coupled to the reference ground through another current source 112a, wherein the current Source 112a provides a constant current I2.

另外,請參照圖4,其繪示圖2之電壓轉電流單元121之該通道可變之PMOS電晶體之一實施例之電路圖。如圖4所示,該通道可變之PMOS電晶體具有多個第四PMOS電晶體121a,且該些第四PMOS電晶體121a係依該些開關信號SW1~SWn控制多個開關121b以決定其併接組態,從而決定所述的通道寬度。In addition, please refer to FIG. 4 , which shows a circuit diagram of an embodiment of the channel-variable PMOS transistor of the voltage-to-current unit 121 in FIG. 2 . As shown in FIG. 4 , the channel-variable PMOS transistor has a plurality of fourth PMOS transistors 121a, and the fourth PMOS transistors 121a control a plurality of switches 121b according to the switching signals SW1˜SWn to determine their Parallel configuration, thus determining the channel width described.

依上述的說明,本發明進一步提出一種LED顯示驅動晶片。請參照圖5,其繪示本發明之LED顯示驅動晶片之一實施例之方塊圖。如圖5所示,一LED顯示驅動晶片200具有一偏壓電路210及複數個輸出通道220,其中,偏壓電路210係用以偏壓該些輸出通道220,該偏壓電路210及輸出通道220係由前述之低功耗驅動級電路100之電流轉電壓電路110及電流輸出電路120對應實現。According to the above description, the present invention further provides an LED display driver chip. Please refer to FIG. 5 , which shows a block diagram of an embodiment of the LED display driver chip of the present invention. As shown in FIG. 5 , an LED display driver chip 200 has a bias circuit 210 and a plurality of output channels 220, wherein the bias circuit 210 is used to bias the output channels 220, and the bias circuit 210 And the output channel 220 is correspondingly implemented by the current-to-voltage circuit 110 and the current output circuit 120 of the aforementioned low-power consumption driver circuit 100 .

另外,依上述的說明,本發明進一步提出一種LED顯示裝置。請參照圖6,其繪示本發明之LED顯示裝置之一實施例的方塊圖。如圖6所示,一LED顯示裝置300具有一LED陣列310及用以驅動LED陣列310之一LED顯示驅動晶片320,其中,LED顯示驅動晶片320係由LED顯示驅動晶片200實現。另外,LED陣列310可為一共陽型LED陣列或一共陰型LED陣列,且其可為一次毫米發光二極體陣列、一微發光二極體陣列或一量子點發光二極體陣列。In addition, according to the above description, the present invention further provides an LED display device. Please refer to FIG. 6 , which shows a block diagram of an embodiment of the LED display device of the present invention. As shown in FIG. 6 , an LED display device 300 has an LED array 310 and an LED display driver chip 320 for driving the LED array 310 , wherein the LED display driver chip 320 is realized by the LED display driver chip 200 . In addition, the LED array 310 can be a common-anode LED array or a common-cathode LED array, and it can be a millimeter LED array, a micro LED array or a quantum dot LED array.

藉由前述所揭露的設計,本發明乃具有以下的優點: 一、本發明之用於LED 顯示驅動晶片之低功耗驅動級電路可藉由取消電流輸出通道中之放大器而有效縮減晶片之功耗。 二、本發明之LED顯示驅動晶片可藉由上述的低功耗驅動級電路有效縮減晶片面積及降低晶片之功耗。 三、本發明之顯示裝置可藉由上述的低功耗驅動級電路有效縮減其LED顯示驅動晶片之晶片面積及降低其功耗。 With the design disclosed above, the present invention has the following advantages: 1. The low power consumption driving stage circuit for LED display driving chip of the present invention can effectively reduce the power consumption of the chip by canceling the amplifier in the current output channel. 2. The LED display driver chip of the present invention can effectively reduce the chip area and power consumption of the chip by the above-mentioned low power consumption driver circuit. 3. The display device of the present invention can effectively reduce the chip area of its LED display driver chip and reduce its power consumption by the above-mentioned low power consumption driver circuit.

本案所揭示者,乃較佳實施例,舉凡局部之變更或修飾而源於本案之技術思想而為熟習該項技藝之人所易於推知者,俱不脫本案之專利權範疇。What is disclosed in this case is a preferred embodiment. For example, any partial changes or modifications derived from the technical ideas of this case and easily deduced by those who are familiar with the technology are within the scope of the patent right of this case.

綜上所陳,本案無論目的、手段與功效,皆顯示其迥異於習知技術,且其首先發明合於實用,確實符合發明之專利要件,懇請 貴審查委員明察,並早日賜予專利俾嘉惠社會,是為至禱。To sum up, regardless of the purpose, means and efficacy of this case, it shows that it is very different from the conventional technology, and its first invention is practical, and it does meet the patent requirements of the invention. I implore your review committee to understand it clearly and grant a patent as soon as possible. Society is for the Most Prayer.

10:PMOS電晶體 20:PMOS電晶體 30:放大器 31a、31b:NMOS電晶體 32a、32b:PMOS電晶體 33:NMOS電晶體 34a:PMOS電晶體 34b:NMOS電晶體 35a、35b:NMOS電晶體 36:NMOS電晶體 37a、37b、38a、38b:PMOS電晶體 39a、39b:NMOS電晶體 40:LED元件 100:低功耗驅動級電路 110:電流轉電壓電路 111:第一PMOS電晶體 112:第二PMOS電晶體 112a:電流源 113:PMOS電晶體 114:定電流源 115:第一電流源 120:電流輸出電路 121:電壓轉電流單元 121a:第四PMOS電晶體 121b:開關 122:第三PMOS電晶體 123:PMOS電晶體 124:第二電流源 200:LED顯示驅動晶片 210:偏壓電路 220:輸出通道 300:LED顯示裝置 310:LED陣列 320:LED顯示驅動晶片 10: PMOS transistor 20: PMOS transistor 30: Amplifier 31a, 31b: NMOS transistors 32a, 32b: PMOS transistors 33: NMOS transistor 34a: PMOS transistor 34b: NMOS transistor 35a, 35b: NMOS transistors 36: NMOS transistor 37a, 37b, 38a, 38b: PMOS transistors 39a, 39b: NMOS transistor 40: LED components 100: Low power consumption driver stage circuit 110: Current to voltage circuit 111: The first PMOS transistor 112: The second PMOS transistor 112a: current source 113: PMOS transistor 114: constant current source 115: the first current source 120: current output circuit 121: Voltage to current unit 121a: the fourth PMOS transistor 121b: switch 122: The third PMOS transistor 123: PMOS transistor 124: second current source 200: LED display driver chip 210: Bias circuit 220: output channel 300: LED display device 310:LED array 320: LED display driver chip

圖1a繪示一現有LED顯示晶片之驅動級電路之電路圖。 圖1b繪示圖1a之驅動級電路之放大器之一兩級式架構之電路圖。 圖1c繪示圖1a之驅動級電路之放大器之一疊接式架構之電路圖。 圖2繪示本發明之用於LED 顯示驅動晶片之低功耗驅動級電路之一實施例的電路圖。 圖3繪示圖2之低功耗驅動級電路之第一偏壓電路及第二偏壓電路之一實施例的電路圖。 圖4繪示圖2之低功耗驅動級電路之電壓轉電流單元之通道可變之PMOS電晶體之一實施例之電路圖。 圖5繪示本發明之LED顯示驅動晶片之一實施例之方塊圖。 圖6繪示本發明之LED顯示裝置之一實施例的方塊圖。 FIG. 1a shows a circuit diagram of a driver stage circuit of a conventional LED display chip. FIG. 1b shows a circuit diagram of a two-stage structure of an amplifier of the driver stage circuit of FIG. 1a. FIG. 1c is a circuit diagram of a cascaded structure of amplifiers in the driver stage circuit of FIG. 1a. FIG. 2 is a circuit diagram of an embodiment of a low power consumption driver circuit for an LED display driver chip of the present invention. FIG. 3 is a circuit diagram of an embodiment of a first bias circuit and a second bias circuit of the low power consumption driver circuit shown in FIG. 2 . FIG. 4 is a circuit diagram of an embodiment of a channel-variable PMOS transistor of the voltage-to-current unit of the low-power-consumption driving stage circuit shown in FIG. 2 . FIG. 5 shows a block diagram of an embodiment of the LED display driver chip of the present invention. FIG. 6 shows a block diagram of an embodiment of the LED display device of the present invention.

100:低功耗驅動級電路 100: Low power consumption driver stage circuit

110:電流轉電壓電路 110: Current to voltage circuit

111:第一PMOS電晶體 111: The first PMOS transistor

112:第二PMOS電晶體 112: The second PMOS transistor

113:PMOS電晶體 113: PMOS transistor

114:定電流源 114: constant current source

115:第一電流源 115: the first current source

120:電流輸出電路 120: current output circuit

121:電壓轉電流單元 121: Voltage to current unit

122:第三PMOS電晶體 122: The third PMOS transistor

123:PMOS電晶體 123: PMOS transistor

124:第二電流源 124: second current source

Claims (9)

一種用於LED顯示驅動晶片之低功耗驅動級電路,其包括:一電流轉電壓電路,具有一第一PMOS電晶體以依一定電流源之電流在其閘極產生一控制電壓,其中,該第一PMOS電晶體之源極耦接一第一供應電壓,且其汲極被偏置在一定電壓;以及一電流輸出電路,具有一電壓轉電流單元,該電壓轉電流單元具有一通道可變之PMOS電晶體,其中,該通道可變之PMOS電晶體之源極耦接該第一供應電壓,閘極耦接該控制電壓,汲極被偏置在該定電壓,且該通道可變之PMOS電晶體係依複數個開關信號決定其通道寬度;其中,該通道可變之PMOS電晶體具有多個第四PMOS電晶體,且該些第四PMOS電晶體係依該些開關信號決定其併接組態以決定所述的通道寬度。 A low-power drive stage circuit for LED display drive chips, which includes: a current-to-voltage circuit with a first PMOS transistor to generate a control voltage at its gate according to the current of a certain current source, wherein the The source of the first PMOS transistor is coupled to a first supply voltage, and its drain is biased at a certain voltage; and a current output circuit has a voltage-to-current unit, and the voltage-to-current unit has a channel variable A PMOS transistor, wherein the source of the channel variable PMOS transistor is coupled to the first supply voltage, the gate is coupled to the control voltage, the drain is biased at the constant voltage, and the channel variable The PMOS transistor system determines its channel width according to a plurality of switching signals; wherein, the channel-variable PMOS transistor has a plurality of fourth PMOS transistors, and the fourth PMOS transistor system determines its channel width according to the switching signals. Connect to the configuration to determine the channel width described. 如申請專利範圍第1項所述之用於LED顯示驅動晶片之低功耗驅動級電路,其中,該電流轉電壓電路具有一第一偏壓電路,該第一偏壓電路具有串接於一第二供應電壓與一參考地之間之一第二PMOS電晶體及一第一電流源,以依該第一電流源之電流在該第二PMOS電晶體之閘極產生該定電壓。 As the low power consumption driver circuit for LED display driver chip described in item 1 of the patent scope of the application, wherein, the current-to-voltage circuit has a first bias circuit, and the first bias circuit has a serial connection A second PMOS transistor and a first current source between a second supply voltage and a reference ground are used to generate the constant voltage at the gate of the second PMOS transistor according to the current of the first current source. 如申請專利範圍第2項所述之用於LED顯示驅動晶片之低功耗驅動級電路,其中,該電流輸出電路具有一第二偏壓電路,該第二偏壓電路具有串接於該第二供應電壓與該參考地之間之一第三PMOS電晶體及一第二電流源,以依該第二電流源之電流在該第三PMOS電晶體之閘極產生該定電 壓,該第三PMOS電晶體之通道長寬比等於該第二PMOS電晶體之通道長寬比,且該第二電流源之電流等於該第一電流源之電流。 As the low power consumption driving stage circuit for LED display driver chip described in item 2 of the patent scope of the application, wherein, the current output circuit has a second bias circuit, and the second bias circuit has a circuit connected in series A third PMOS transistor and a second current source between the second supply voltage and the reference ground, so as to generate the constant voltage at the gate of the third PMOS transistor according to the current of the second current source voltage, the channel aspect ratio of the third PMOS transistor is equal to the channel aspect ratio of the second PMOS transistor, and the current of the second current source is equal to the current of the first current source. 如申請專利範圍第3項所述之用於LED顯示驅動晶片之低功耗驅動級電路,其中,該第二供應電壓高於該第一供應電壓。 The low power consumption driving stage circuit for LED display driver chip as described in item 3 of the scope of patent application, wherein the second supply voltage is higher than the first supply voltage. 如申請專利範圍第3項所述之用於LED顯示驅動晶片之低功耗驅動級電路,其中,該第二供應電壓等於該第一供應電壓,且該第二PMOS電晶體和該第三PMOS電晶體均為一原生PMOS電晶體。 The low power consumption driving stage circuit for LED display driver chip as described in item 3 of the scope of patent application, wherein the second supply voltage is equal to the first supply voltage, and the second PMOS transistor and the third PMOS The transistors are all native PMOS transistors. 如申請專利範圍第3項所述之用於LED顯示驅動晶片之低功耗驅動級電路,其中,該第二供應電壓等於該第一供應電壓,且該第二PMOS電晶體和該第三PMOS電晶體之本體各經一第二電流源耦接至該參考地。 The low power consumption driving stage circuit for LED display driver chip as described in item 3 of the scope of patent application, wherein the second supply voltage is equal to the first supply voltage, and the second PMOS transistor and the third PMOS The bodies of the transistors are each coupled to the reference ground via a second current source. 一種LED顯示驅動晶片,其具有一偏壓電路及複數個輸出通道,該偏壓電路係用以偏壓該些輸出通道,其中,該偏壓電路及所述輸出通道係由如申請專利範圍第1至6項中任一項所述之低功耗驅動級電路之該電流轉電壓電路及該電流輸出電路對應實現。 An LED display driver chip, which has a bias circuit and a plurality of output channels, and the bias circuit is used to bias the output channels, wherein, the bias circuit and the output channels are provided by the application The current-to-voltage circuit and the current output circuit of the low-power-consumption driving stage circuit described in any one of items 1 to 6 of the patent scope are implemented correspondingly. 一種LED顯示裝置,其具有一LED陣列及用以驅動該LED陣列之如申請專利範圍第7項所述之LED顯示驅動晶片。 An LED display device, which has an LED array and the LED display driving chip as described in item 7 of the scope of the patent application for driving the LED array. 如申請專利範圍第8項所述之LED顯示裝置,其中,該LED陣列係由次毫米發光二極體陣列、微發光二極體陣列和量子點發光二極體陣列所組成之群組所選擇的一種顯示元件陣列。 The LED display device as described in item 8 of the scope of the patent application, wherein the LED array is selected from the group consisting of a submillimeter light emitting diode array, a micro light emitting diode array and a quantum dot light emitting diode array An array of display elements.
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US20080054390A1 (en) * 2006-09-05 2008-03-06 Sloan Thomas C Led controller and method using variable drive currents
TW201002156A (en) * 2008-06-30 2010-01-01 Green Solution Technology Inc LED driving circuit, LED driving controller and transistor switching module thereof
TW202036513A (en) * 2019-03-28 2020-10-01 大陸商北京集創北方科技股份有限公司 LED display driving circuit and LED display wherein the LED display driving circuit includes a voltage-to-current circuit, a dis-connectable current mirror circuit and an output stage current mirror circuit

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