TWI809935B - 晶圓減薄用砂輪 - Google Patents
晶圓減薄用砂輪 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
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Abstract
本發明係關於一種晶圓減薄用砂輪,其包含:一基板;一緩衝層,設於該基板之上,該緩衝層之厚度為20至50μm;及一研磨層,設於該緩衝層之上,且該研磨層具有複數個分散於其中的磨料顆粒,且該磨料顆粒之平均粒徑為界於0.05至5μm。本發明之晶圓減薄用砂輪不但可具有緩衝層所發揮之減緩外力並降低元件受損的效果,還能保有其良好精度。
Description
本發明係關於一種砂輪(grinding wheel),特別係一種晶圓減薄用砂輪。
現階段而言,研磨相關技術已從各個方面影響著半導體產業,例如晶圓減薄(或稱晶圓薄化,wafer thinning)或者晶圓平坦化等;其中又涉及機械式輪磨(Grinding) 以及化學機械拋光(CMP)等多樣技術。
化學機械拋光可使晶圓表面平坦化以進行後續製作積體電路,其製程中包括使用研磨漿液及拋光墊,研磨漿液的液體具有腐蝕性,而其中的粒子可充滿於拋光墊的微細溝槽經固定後,於拋光墊旋轉時提供機械摩擦力研磨晶圓,降低晶圓表面的粗糙度並達到拋光效果。
機械式輪磨則係目前晶圓薄化最常使用的技術,主因在於其薄化速度快,設備成本相對低且薄化品質穩定。具體而言,機械式輪磨係利用高速旋轉的主軸帶動研磨砂輪,並利用其表面的磨料顆粒與工作表面接觸並交互作用,藉以達到磨削之目的。
由於上述技術通常涉及快速且重複的研磨過程,研磨器材在長期使用下可能因碰撞導致其元件損傷,進而影響製作後續成品的精度。有鑑於此,現有技術中提出了在用於CMP的研磨墊中增設高分子緩衝層之技術特徵(如中華民國發明專利公告號TW I410299B一案);亦見在研磨層內側設置彈簧結構之相關內容(如中華人民共和國發明專利公布號 CN 105397650A一案)。
本發明人經觀察後發現,由於緩衝層的設置可能導致用於晶圓減薄之研磨砂輪之精度下降,故綜觀先前技術可見,其通常僅應用於拋光研磨器材當中;然而,拋光製程的加工效率、加工成本以及環境永續成本皆相對較高。有鑑於此,本發明人進一步測試後發現,當結構中的磨料顆粒之粒徑與緩衝層的厚度皆在一定的數值範圍內時,不但令緩衝層得以發揮其減緩外力並降低元件受損之效,更能保有其研磨砂輪之良好精度。換言之,實務上即可採用晶圓減薄實行最大程度的加工程序,進而降低整體製程的成本並提高效率。
有鑑於此,本發明一方面提供一種晶圓減薄用砂輪,其包含:
一基板;一緩衝層,設於該基板之上,該緩衝層之厚度為20至50 μm;及一研磨層,設於該緩衝層之上,且該研磨層具有複數個分散於其中的磨料顆粒,且該磨料顆粒之平均粒徑為界於0.05至5μm。
本發明另一方面提供一種晶圓減薄用砂輪,其包含:一基板;一第一黏合層,設於該基板之上;一緩衝層,設於該第一黏合層之上,該緩衝層之厚度為20至50 μm;一第二黏合層,設於該緩衝層之上;及一研磨層,設於該第二黏合層之上,且該研磨層具有複數個分散於其中的磨料顆粒,且該磨料顆粒之粒徑界於0.05至5μm。
根據本發明之一實施例,該該緩衝層包含一金屬材料。較佳地,該結構狀金屬材料為帶有週期結構之金屬片材。更佳地,該金屬材料之厚度為1至50μm。
根據本發明之一實施例,該緩衝層包含一高分子彈性體。較佳地,該高分子彈性體為矽氧烷樹脂。
根據本發明之一實施例,該第一黏合層及/或第二黏合層為環氧樹脂。
根據本發明之一實施例,該研磨層具有一研磨尖端,該研磨尖端為刀刃狀、圓錐狀、圓弧狀、圓柱狀、角錐狀或角柱狀。較佳地,該磨料顆粒係選自由鑽石、立方氮化硼、氧化鋁、氧化鈰及碳化矽所組成之群組。
根據本發明之一實施例,該基板係選自由不銹鋼、模具鋼、金屬合金、陶瓷及塑膠所組成之群組。
相較於先前技術,本發明之晶圓減薄用砂輪設有緩衝層,並且界定其厚度與磨料顆粒之粒徑皆在一定的數值範圍內;藉此,所述晶圓減薄用砂輪不但可具有緩衝層所發揮之減緩外力並降低元件受損的效果,還能保有其良好精度。換言之,實務上即可採用晶圓減薄實行最大程度的加工程序,進而降低整體製程的成本並提高效率。
以下實施方式不應視為過度地限制本發明。本發明所屬技術領域中具有通常知識者可在不背離本發明之精神或範疇的情況下對本文所討論之實施例進行修改及變化,而仍屬於本發明之範圍。
本文中術語「一」及「一種」代表於本文中之語法對象有一個或多於一個(即至少一個)。
首先,本發明提供一種晶圓減薄用砂輪,其包含:一基板;一緩衝層,設於該基板之上;及一研磨層,設於該緩衝層之上,且該研磨層具有複數個分散於其中的磨料顆粒。另一方面,本發明提供一種晶圓減薄用砂輪,其包含:一基板;一第一黏合層,設於該基板之上;一緩衝層,設於該第一黏合層之上;一第二黏合層,設於該緩衝層之上;及一研磨層,設於該第二黏合層之上,且該研磨層具有複數個分散於其中的磨料顆粒。
本文所稱之「基板」由不鏽鋼、金屬材料、塑膠材料及陶瓷材料之其一或以上所構成;實務上只要能夠承載該研磨層即可。較佳材料可為金屬基板、金屬合金基板、不鏽鋼基板或模具鋼基板。更具體而言,該金屬基板包含但不限於銅、鐵、鋁、鈦或錫等;金屬合金基板包含但不限於鐵合金、銅合金、鋁合金、鈦合金或鎂合金等。
本文所稱之「黏合層」係指一用以黏接相鄰層體之結構。具體而言,該第一/第二黏合層之材料皆係選自由感壓膠、一液型糊劑、二液型糊劑、壓克力樹脂及環氧樹脂所組成之群組;較佳地,該第一黏合層及第二黏合層之材料皆為環氧樹脂。感壓膠通常包含載體膜,該載體膜包括聚酯,且在載體膜之上側及下側上具有具流動性之黏合層。一液型糊劑係指包含高分子量彈性體充當黏接劑之糊劑,較佳係包含聚胺酯,一液型糊劑包含油改質型塗料及濕氣硬化型塗料。壓克力樹脂包含常溫硬化型及加熱硬化乾燥型;其中常溫硬化型主要為壓克力樹脂單體,加熱硬化乾燥型則是以壓克力樹脂聚合物為基本構造,於其中導入活性反應基,當加熱時該樹脂單獨或與含有反應基之樹脂以及交聯劑反應形成三次元之網狀結構。環氧樹脂則可藉由加入交聯劑而進一步形成三次元結構。
本文所稱之「緩衝層」係指一提供減緩裝置所受外力之效果的層體;在一些情況下,緩衝層所具備之材料可能具有相較其他部分更高的壓縮率。該緩衝層之厚度為20至50 μm,例如:20、21、22、23、24、25、26、27、28、29、30、31、32、33、34、35、36、37、38、39、40、41、42、43、44、45、46、47、48、49或50μm。
根據本發明之一些實施例,該緩衝層包含一金屬材料;具體而言,該金屬材料係選自由鐵、鈷、鎳、鉻、錳、矽、鋁所組成之群組。更進一步地,所述金屬材料係一帶有週期結構之金屬片材。本文所稱之「帶有週期結構之金屬片材」係指一種設有具重複性且排列規則之微結構的金屬片材;較佳地,所述微結構可係一彈性結構。根據本發明之一些特定實施例,該金屬材料之厚度為1至50μm,例如:1、5、10、15、20、25、30、35、40、45或50μm。
根據本發明之一些實施例,該緩衝層包含一高分子彈性體。如本文所用,「高分子彈性體」係展現類似橡膠品質之一聚合物種類。根據本發明之一些實施例,該高分子彈性體之材料係選自樹脂、聚合物、聚合物複合材料、環氧樹脂及矽氧烷樹脂所組成之群組;較佳地,該緩衝層包含矽氧烷樹脂。
本文所稱之「研磨層」係用以承載該複數磨料顆粒的層體,且其附著於該基板上。該磨料顆粒主要係嵌入固定在該研磨層之中。具體而言,該研磨層材料之選用包含硬焊材料、電鍍材料、陶瓷材料、金屬材料或高分子材料,本發明不為此所限。更進一步地,該硬焊材料、該電鍍材料或該金屬材料係選自由鐵、鈷、鎳、鉻、錳、矽、鋁所組成之群組;而該高分子材料包含環氧樹脂、聚酯樹脂、聚丙烯酸樹脂或酚醛樹脂;另,該陶瓷材料包含各種金屬氧化物、氮化物、碳化物、硼化物、矽化物或其等之組合,例如碳化矽、氮化矽、氮化鋁、氧化鋁、碳化鈦、硼化鈦或碳化硼等。
本文所稱之「磨料顆粒」係選自由天然鑽石、人造鑽石、多晶鑽石、立方氮化硼、氧化鋁、氧化鈰及碳化矽所組成之群組。該磨料顆粒之外形可為但不限於角錐狀、圓錐狀、圓弧狀、圓柱狀、刀刃狀或角柱狀。該磨料顆粒之平均粒徑為界於0.05 至5μm;例如:0.05、1、1.5、2、2.5、3、3.5、4、4.5、5μm。
實施例
1
本案實施例1係用以具體呈現本發明所提供之晶圓減薄用砂輪。圖1係示意本發明實施例1之晶圓減薄用砂輪100A的層疊結構。該晶圓減薄用砂輪100A包括一基板110,並在該基板110上方依序設置一緩衝層130以及一研磨層150。該緩衝層130具有一厚度D。而該研磨層150包括複數磨料顆粒152,且該複數磨料顆粒分具一粒徑d。詳細而言,該緩衝層130係直接設置於該基板110上方,而該研磨層150則係直接設置於該緩衝層130上方。
另一方面,該厚度D為20至50 μm,例如:20、21、22、23、24、25、26、27、28、29、30、31、32、33、34、35、36、37、38、39、40、41、42、43、44、45、46、47、48、49或50μm。該粒徑d則為0.05 至5μm;例如:0.05、1、1.5、2、2.5、3、3.5、4、4.5、5μm。
實施例
2
本案實施例2係用以具體呈現本發明所提供之晶圓減薄用砂輪。圖2係呈現本發明實施例2之晶圓減薄用砂輪100B的層疊結構。晶圓減薄用砂輪100B的結構與實施例1中晶圓減薄用砂輪100A之結構實質上相似,兩者之差別在於,在晶圓減薄用砂輪100B中,該緩衝層130及該基板110之間,以及該研磨層150及緩衝層130之間皆進一步設有一黏合層120(分別為第一黏合層及第二黏合層)。
實施例
3
本案實施例3係用以具體呈現本發明所提供之晶圓減薄用砂輪。圖3係呈現本發明實施例3之晶圓減薄用砂輪100C的層疊結構。晶圓減薄用砂輪100C的結構與實施例2中晶圓減薄用砂輪100B之結構實質上相似,兩者之差別在於,該緩衝層130當中設有複數週期結構130S。具體而言,該複數週期結構130S之間為中空結構,且其間為一固定間距。根據本發明較佳的實施例,該複數週期結構130S可分別為一彈性結構或一支撐結構;例如;彈簧。
隨時間受力變化分析
於此,本案發明人分別測試本案實施例之晶圓減薄用砂輪與習用砂輪在研磨工件時,其隨時間所受外力的變化情形。圖4係呈現砂輪A在研磨工件B的過程中隨時間之受力變化。如圖4所示,其橫軸係呈現時間(單位為ms),而其縱軸則呈現砂輪所受外力(單位為N)。實施例於圖中係以實線表達,而習用砂輪則以虛線表達。詳細而言,在此測試中,砂輪的研磨係採定速之進刀模式。
由圖4可見,在一定時間內,本案實施例之晶圓減薄用砂輪在研磨工件的過程中所受外力之變化,相較於習用的砂輪而言,實質上較為平緩且穩定,亦未如同習用砂輪在測試中有遽然上升的受力情形。
在不為特定理論所限制下,研磨層厚度約為緩衝層厚度的5~500倍,較佳為100~350倍,更佳為120~200倍。
綜上所述,實施例之晶圓減薄用砂輪基於其界定可相對習用砂輪而實質減緩其研磨過程中所受外力。據此可理解,本發明之晶圓減薄用砂輪不但可具有緩衝層所發揮之減緩外力並降低元件受損的效果,還能保有其良好精度,可進一步在實務上改善製程的加工效率、加工成本以及環境永續成本等面向。
以上已將本發明做一詳細說明,惟以上所述者,僅惟本發明之一較佳實施例而已,當不能以此限定本發明實施之範圍,即凡依本發明申請專利範圍所作之均等變化與修飾,皆應仍屬本發明之專利涵蓋範圍內。
100A, 100B, 100C:晶圓減薄用砂輪
110:基板
120:黏合層
130:緩衝層
130S:週期結構
150:研磨層
152:磨料顆粒
A:砂輪
B:工件
D:厚度
d:粒徑
為讓本發明的上述與其他目的、特徵、優點與實施例能更淺顯易懂,所附圖式之說明如下:
圖1至圖3係本發明不同實施例之晶圓減薄用砂輪剖面示意圖。
圖4係一砂輪隨時間受力變化比較示意圖。
根據慣常的作業方式,圖中各種特徵與元件並未依實際比例繪製,其繪製方式是為了以最佳的方式呈現與本發明相關的具體特徵與元件。此外,在不同圖式間,以相同或相似的元件符號指稱相似的元件及部件。
A:砂輪
B:工件
Claims (7)
- 一種晶圓減薄用砂輪,其包含:一基板;一緩衝層,設於該基板之上,該緩衝層之厚度為20至50μm,其中該緩衝層包含一金屬材料,該金屬材料為帶有週期結構之金屬片材;及一研磨層,設於該緩衝層之上,且該研磨層具有複數個分散於其中的磨料顆粒,且該磨料顆粒之平均粒徑為界於0.05至5μm。
- 一種晶圓減薄用砂輪,其包含:一基板;一第一黏合層,設於該基板之上;一緩衝層,設於該第一黏合層之上,該緩衝層之厚度為20至50μm,其中該緩衝層包含一金屬材料,該金屬材料為帶有週期結構之金屬片材;一第二黏合層,設於該緩衝層之上;及一研磨層,設於該第二黏合層之上,且該研磨層具有複數個分散於其中的磨料顆粒,且該磨料顆粒之粒徑界於0.05至5μm。
- 如請求項1或2之晶圓減薄用砂輪,其中該金屬材料之厚度為1至50μm。
- 如請求項2之晶圓減薄用砂輪,其中該第一黏合層及/或第二黏合層為環氧樹脂。
- 如請求項1或2之晶圓減薄用砂輪,其中該研磨層具有一研磨尖端,該研磨尖端為刀刃狀、圓錐狀、圓弧狀、圓柱狀、角錐狀或角柱狀。
- 如請求項5之晶圓減薄用砂輪,其中該磨料顆粒係選自由鑽石、立方氮化硼、氧化鋁、氧化鈰及碳化矽所組成之群組。
- 如請求項1或2之晶圓減薄用砂輪,其中該基板係選自由不銹鋼、模具鋼、金屬合金、陶瓷及塑膠所組成之群組。
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