TWI808612B - processing device - Google Patents

Abstract

[Problem] Provide a processing device capable of improving processing performance. [Solution] The plasma generating part (18) is heated by radiant heat (H) (see FIG. 2 ) based on plasma discharge to remove moisture in the vacuum chamber (10). Thus, moisture in the vacuum chamber (10) can be removed by using the radiant heat (H) by plasma discharge in the plasma generation part (18). Therefore, by lowering the ultimate pressure of the vacuum in the vacuum chamber (10), a high degree of vacuum can be achieved. Thereby, when the film forming process is performed in the vacuum chamber (10), the process performance can be improved by improving the film quality.

Description

processing device

The invention relates to a processing device.

As a processing apparatus for performing predetermined processing on an object, as disclosed in Patent Document 1, there is known a film-forming apparatus that forms a film by attaching particles of a film-forming material. The processing device uses a plasma gun to generate plasma in a chamber, and evaporates a film-forming material in the chamber. The film-forming material is attached to the substrate, thereby forming a film on the substrate.

[Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Unexamined Patent Publication No. 2016-141856

Here, as described above, in a processing apparatus that generates a plasma in a chamber to form a film, it is required to improve the film quality of the film of the object. In addition, it is also required to improve the film quality by increasing the irradiation efficiency of negative ions in the processing equipment for the treatment of negative ion irradiation. In summary, for the chamber Processing equipment that generates plasma to perform predetermined processing is required to improve the processing performance of film formation processing and negative ion irradiation processing.

Therefore, an object of the present invention is to provide a processing device capable of improving processing performance.

The processing device related to the present invention is to perform predetermined processing on an object; the processing device has: a chamber for accommodating the object and processing it inside; and a plasma generation part that generates plasma in the chamber; the plasma generation part is heated by radiant heat generated by the plasma to remove moisture in the chamber.

For example, when the chamber is opened to the atmosphere for maintenance or the like, moisture in the atmosphere may be adsorbed in the chamber. Such adsorbed moisture cannot be removed only by vacuuming the chamber, which sometimes prevents the attainment of high vacuum. In contrast, the plasma generation part is heated by radiation heat generated by the plasma to remove moisture in the chamber. In this way, the moisture in the chamber can be removed by using the radiant heat generated by the plasma in the plasma generating unit. Therefore, by lowering the ultimate pressure of the vacuum in the chamber, a high vacuum can be achieved. Thereby, when predetermined processing such as film formation processing or negative ion irradiation is performed in the chamber, processing performance can be improved by improving film quality.

The plasma generating unit can generate plasma according to a dedicated operation mode for removing moisture. In this way, only by adding a dedicated operation mode, it is possible to use the existing plasma generation unit without adding a new heating device Moisture removal is carried out.

The processing device further has a cooling mechanism for cooling the chamber during processing, and the cooling mechanism can stop cooling when the plasma generating part is heating. In this case, since the chamber is easily heated, moisture in the chamber can be effectively removed without setting the generation energy of the plasma generation too high.

The processing device is further equipped with a cooling mechanism for cooling the chamber during processing. The chamber may have an anti-plating plate covering the inner wall surface, and the cooling mechanism can cool the anti-plating plate. In this case, the anti-plating plate covers the inner wall surface of the chamber, thereby preventing substances from directly adhering to the inner wall surface. This type of anti-plating plate tends to become high temperature during processing, but plastic deformation or melting due to high temperature can be suppressed by cooling the anti-plating plate by the cooling mechanism.

The plasma generator may have a pressure gradient type plasma gun. In this case, heating by plasma generation becomes easy.

The treatment may be a film-forming process in which particles of a film-forming material are attached to an object to form a film. By removing moisture in the chamber by the plasma generation part, the film formation process can be performed under high vacuum, so the film quality of the film formed on the object can be improved.

The processing device further includes: an anode, which holds the film-forming material at the holding position; and a retraction mechanism, which retracts the film-forming material from the holding position; and the plasma generating unit can generate plasma between the anode and the anode while the film-forming material is retracted from the holding position by the retracting mechanism, and can be heated. In this case, when removing moisture, it is possible to prevent the film-forming material from Slurry and sublimation. Thereby, when removing moisture, it is not necessary to move the plasma from the anode to the auxiliary anode, so the auxiliary anode can be omitted.

The processing device is further equipped with: an anode, which holds the film-forming material at a holding position; a plasma generating unit can use the energy generated by the film-forming material without sublimation to generate plasma between the anode and the anode for heating. In this case, it is possible to suppress the sublimation of the film-forming material due to plasma when water is removed. Thereby, when removing moisture, it is not necessary to move the plasma from the anode to the auxiliary anode, so the auxiliary anode can be omitted.

The processing device further includes: an anode that holds the film-forming material at a holding position; an auxiliary anode that is provided to surround the anode; and a plasma generating unit capable of generating plasma between the auxiliary anode and heating. In this case, even if the film-forming material is not withdrawn from the anode, it is possible to suppress the sublimation of the film-forming material due to the plasma when water is removed.

The treatment may be negative ion irradiation treatment of irradiating an object with negative ions generated in the chamber. By removing moisture in the chamber by the plasma generating part, negative ion irradiation treatment can be performed under high vacuum, so the efficiency of negative ion irradiation can be improved. As a result, the film quality of the film of the object to be irradiated with negative ions can be improved.

According to the present invention, it is possible to provide a processing device capable of improving processing performance.

1: Processing device

2: Hearth mechanism

3: Handling mechanism

5: Steering coil

6: Ring hearth (auxiliary anode)

7: Plasma Gun

9: Coil

10: Vacuum chamber (chamber)

10a: Moving room

10b: film forming chamber

10c: plasma port

10d, 10e: wall

10h, 10i: side wall

10j: bottom wall

10k: Inner wall surface

10W: wall

11: Substrate (object)

14: Film forming mechanism

18: Plasma Generation Department

17: Main hearth (anode)

17a: filling part

17b: flange part

17c: through hole

20:Permanent magnet part

30: cooling mechanism

31: Cooling piping

32: cooling plate

35: anti-plating plate

40: Gas supply part

41: Gas supply port

50: Retreat Mechanism

51: Retreat Department

52: Operation department

53: Drive Department

60: Cathode

61: The first intermediate electrode (gate)

62: Second intermediate electrode (gate)

61a: ring permanent magnet

62a: Electromagnet coil

80: Current supply part

90: Control Department

100: film forming device

200: Negative ion irradiation device

201: anode

202: Substrate configuration department

A: arrow

H: radiant heat

Ma: film-forming material

Mb: particle

P: Plasma

[ Fig. 1] Fig. 1 is a schematic sectional view showing the structure of a film forming apparatus as a processing apparatus according to an embodiment of the present invention.

[ Fig. 2 ] is an enlarged schematic sectional view schematically showing the main hearth, ring hearth and plasma.

[ Fig. 3 ] is an enlarged schematic cross-sectional view of a film forming apparatus describing a modified example.

[ Fig. 4 ] is an enlarged schematic cross-sectional view of the negative ion irradiation device.

Hereinafter, a processing device according to an embodiment of the present invention will be described with reference to the drawings. In addition, in the description of the drawings, the same reference numerals are assigned to the same elements, and repeated descriptions are omitted.

First, the configuration of a processing device 1 according to an embodiment of the present invention will be described with reference to FIG. 1 . FIG. 1 is a schematic cross-sectional view showing the structure of a film forming apparatus 100 as a processing apparatus 1 of the present embodiment. The processing apparatus 1 is an apparatus that performs predetermined processing on a substrate 11 (object). In the present embodiment, the predetermined process is a film-forming process in which the particles Mb of the film-forming material Ma are attached to the substrate 11 to form a film. That is, the processing apparatus 1 is constituted by the film forming apparatus 100 . As shown in FIG. 1 , the film forming apparatus 100 of the present embodiment is an ion plating apparatus used in a so-called ion plating method. In addition, for convenience of explanation, an XYZ coordinate system is shown in FIG. 1 . The Y-axis direction is the direction in which the substrate 11 is conveyed. The Z-axis direction is a direction in which the base plate 11 faces a hearth mechanism described later. The X-axis direction is a direction perpendicular to the Y-axis direction and the Z-axis direction.

In the film forming apparatus 100 , the substrate 11 is arranged and transported in the vacuum chamber 10 so that the thickness direction of the substrate 11 becomes substantially vertical. The so-called horizontal film forming device. At this time, the X-axis and Y-axis directions are the horizontal direction, and the Z-axis direction is the vertical direction and the plate thickness direction. In addition, the film forming apparatus 100 may be a so-called vertical film forming apparatus that arranges and transports the substrate 11 in the vacuum chamber 10 in a state where the substrate 11 is erected or tilted from the erected state so that the thickness direction of the substrate 11 becomes a horizontal direction (the Z-axis direction in FIGS. 1 and 2 ). In this case, the Z-axis direction is the horizontal direction, the thickness direction of the substrate 11 is the plate thickness direction, the Y-axis direction is the horizontal direction, and the X-axis direction is the vertical direction.

The film forming apparatus 100 forms a film on the surface of the substrate 11 by supplying the particles Mb of the film forming material Ma to the substrate 11 . The film forming apparatus 100 includes a vacuum chamber 10 (chamber), a transport mechanism 3 , a film forming mechanism 14 , a cooling mechanism 30 , a gas supply unit 40 , a current supply unit 80 , and a control unit 90 .

The vacuum chamber 10 is a member for accommodating the substrate 11 and performing film formation. The vacuum chamber 10 has: a transfer chamber 10a for transferring the substrate 11 formed with a film of the film-forming material Ma; a film-forming chamber 10b for diffusing the film-forming material Ma; The transfer chamber 10a, the film formation chamber 10b, and the plasma port 10c communicate with each other. The transfer chamber 10a is set along the Y axis in a predetermined transfer direction (arrow A in the figure). The transfer chamber 10a has long wall portions 10d and 10e facing the Z-axis direction and a wall portion facing the X-axis direction. In addition, the vacuum chamber 10 is made of a conductive material, and is connected to the ground potential.

In the film forming chamber 10b, as the wall portion 10W, there are: a pair of side walls along the conveyance direction (arrow A); A pair of side walls 10h and 10i in the direction of intersection (Z-axis direction); and a bottom wall 10j arranged along the X-axis direction.

The conveyance mechanism 3 conveys the substrate holding member 16 holding the substrate 11 in a state facing the film formation material Ma in the conveyance direction (arrow A). For example, the substrate holding member 16 is a frame that holds the outer peripheral edge of the substrate 11 . The conveyance mechanism 3 is constituted by a plurality of conveyance rollers 15 installed in the conveyance chamber 10a. The conveyance rollers 15 are arranged at equal intervals along the conveyance direction (arrow A), and convey along the conveyance direction (arrow A) while supporting the substrate holding member 16 . In addition, as the substrate 11 , for example, a plate-shaped member such as a glass substrate or a plastic substrate is used.

Next, the structure of the film forming mechanism 14 will be described in detail. The film formation mechanism 14 attaches particles of the film formation material Ma to the substrate 11 by ion plating. The film formation mechanism 14 has a plasma generator 18 , a steering coil 5 , a hearth mechanism 2 , and a ring hearth 6 .

The plasma generator 18 generates plasma in the vacuum chamber 10 . The plasma generator 18 has, for example, a pressure gradient type plasma gun 7 . The plasma gun 7 is connected to the film forming chamber 10b through the plasma port 10c whose main part is provided on the side wall of the film forming chamber 10b. The plasma gun 7 generates plasma P in the vacuum chamber 10 . The plasma P generated in the plasma gun 7 is injected into the film formation chamber 10b from the plasma port 10c in the form of a beam. Thereby, plasma P is generated in the film formation chamber 10b.

The plasma gun 7 is closed at one end by a cathode 60 . Between the cathode 60 and the plasma port 10c, a first intermediate electrode (grid) 61 and a second intermediate electrode (grid) 62 are arranged concentrically. A ring-shaped permanent magnet 61a for converging the plasma P is built in the first intermediate electrode 61 . An electromagnet coil 62a for converging the plasma P is also built in the second intermediate electrode 62 .

The steering coil 5 is arranged around the plasma port 10c where the plasma gun is installed. The steering coil 5 guides the plasma P into the film formation chamber 10b. The steering coil 5 is excited by a steering coil power supply (not shown).

The hearth mechanism 2 holds the film-forming material Ma. The hearth mechanism 2 is installed in the film forming chamber 10 b of the vacuum chamber 10 , and is arranged in the negative direction of the Z-axis direction when viewed from the conveyance mechanism 3 . The hearth mechanism 2 has a main hearth 17 (anode) as a main anode for guiding the plasma P emitted from the plasma gun 7 to the film formation material Ma or as a main anode for guiding the plasma P emitted from the plasma gun 7 .

The main hearth 17 has a cylindrical filling part 17a filled with the film-forming material Ma and extending in the positive direction of the Z-axis direction, and a flange part 17b protruding from the filling part 17a. Since the main well 17 is kept at a positive potential with respect to the ground potential of the vacuum chamber 10 , the main well 17 serves as an anode during discharge and attracts the plasma P. A through-hole 17c for filling the film-forming material Ma is formed in the filling portion 17a of the main hearth 17 into which the plasma P is injected. And, the tip portion of the film-forming material Ma is exposed in the film-forming chamber 10b at one end portion of the through-hole 17c. In this way, the main hearth 17 can hold the film-forming material Ma by filling the filling portion 17a with the film-forming material Ma. Moreover, one end portion of the through hole 17 c serves as a holding position for holding the film formation material Ma so that the film formation material Ma is sublimated.

The film-forming material Ma is not particularly limited, and can be appropriately selected according to a desired film, for example, transparent conductive materials such as ITO (Indium Tin Oxide: indium tin oxide), ZnO, metal materials, and insulating sealing materials such as SiON. When the film-forming material Ma is composed of an insulating substance, if the main hearth 17 is irradiated with a plasma P beam, then by the plasma P beam The main furnace 17 is heated by the electric current, the front end of the film-forming material Ma evaporates, and the particles Mb ionized by the plasma P beam diffuse into the film-forming chamber 10b. Also, when the film-forming material Ma is composed of a conductive substance, if the main furnace 17 is irradiated with the plasma P beam, the plasma P beam directly enters the film-forming material Ma, the front end of the film-forming material Ma is heated and evaporated, and the particles Mb ionized by the plasma P beam diffuse into the film-forming chamber 10b. The particles Mb diffused into the film-forming chamber 10b move in the positive direction of the Z-axis of the film-forming chamber 10b, and adhere to the surface of the substrate 11 in the transfer chamber 10a. In addition, the film-forming material Ma is a solid object formed into a cylindrical shape with a predetermined length, and a plurality of film-forming materials Ma are filled in the hearth mechanism 2 at once. Further, according to the consumption of the film-forming material Ma, the film-forming material Ma is sequentially squeezed from the Z-axis negative direction side of the hearth mechanism 2, so that the front end portion of the film-forming material Ma on the leading end side maintains a predetermined positional relationship with the upper end of the main hearth 17.

The ring hearth 6 (auxiliary anode) is an auxiliary anode with electromagnets for inducing plasma P. The ring well 6 is arranged around the main well 17 . The ring hearth 6 is disposed around the filling portion 17a of the main hearth 17 holding the film formation material Ma. The ring hearth 6 has an annular coil 9 , an annular permanent magnet portion 20 , and an annular container 12 , and the coil 9 and the permanent magnet portion 20 are housed in the container 12 . In this embodiment, the coil 9 and the permanent magnet portion 20 are sequentially provided along the Z-axis negative direction when viewed from the conveyance mechanism 3 , but the permanent magnet portion 20 and the coil 9 may be sequentially provided along the Z-axis negative direction. The ring hearth 6 controls the direction of the plasma P incident on the film-forming material Ma or the direction of the plasma P incident on the main hearth 17 according to the magnitude of the current flowing through the coil 9 . In addition, the potentials of the main well 17 and the ring well 6 are controlled based on control signals from the control unit 90 .

The cooling mechanism 30 is a mechanism for cooling the vacuum chamber 10 during film formation. In the present embodiment, the chamber 10 has a plating resist 35 covering the inner wall surface 10k. The anti-plating plate 35 is a plate-shaped member that prevents the particles Mb from adhering to the inner wall surface 10k by adhering the particles Mb. The anti-plating plate 35 covers the side walls 10h and 10i facing the Y-axis direction and the side walls facing the X-axis direction. In addition, the plating resist 35 covering the side wall 10h is opened at a portion corresponding to the plasma gun 7 and the gas supply port 41 .

The cooling mechanism 30 cools the anti-plating plate 35 . The cooling mechanism 30 includes a cooling pipe 31 and a cooling plate 32 . The cooling plate 32 is provided on the back side (inner wall surface 10k side) of the plating resist plate 35 . The cooling plate 32 has substantially the same shape as the plating guard 35 . The cooling pipe 31 is provided on the back side of the cooling plate 32 (inner wall surface 10k side). The cooling pipe 31 is arranged over the entire rear surface of the cooling plate 32 . The cooling pipe 31 is a pipe for flowing a cooling medium such as cooling water. The cooling pipe 31 can cool the cooling plate 32 by heat conduction and heat radiation by a cooling medium. Thereby, the anti-plating plate 35 is cooled by the cooling pipe 31 via the cooling plate 32 .

The gas supply unit 40 supplies carrier gas and oxygen into the vacuum chamber 10 . As the substance contained in the carrier gas, for example, a rare gas such as argon gas or helium gas is used. The gas supply unit 40 is disposed outside the vacuum chamber 10 and supplies source gases into the vacuum chamber 10 through a gas supply port 41 provided on a side wall (for example, side wall 10h) of the film forming chamber 10b. The gas supply unit 40 supplies carrier gas and oxygen at flow rates based on control signals from the control unit 90 .

The current supply unit 80 supplies a current for ionizing the film formation material to the plasma gun 7 . The current supply part 80 is connected to the cathode 60 of the plasma gun 7 supply current. Thereby, the plasma gun 7 discharges with a discharge current of a predetermined value. The current supply unit 80 supplies a current based on the current value of the control signal from the control unit 90 .

The control part 90 is a device which controls the whole film formation apparatus 100, and is comprised by CPU, RAM, ROM, an input-output interface, etc. The control unit 90 is arranged outside the vacuum chamber 10 . When performing the film forming process, the control unit 90 controls the film forming apparatus 100 according to the control content for performing the film forming process. Furthermore, when performing maintenance of the film forming apparatus 100 , the control unit 90 controls the film forming apparatus 100 according to the control content for performing the maintenance. When performing the film forming process, the control unit 90 controls the film forming apparatus 100 according to the film forming conditions. The control unit 90 controls the flow rate of the gas supplied from the gas supply unit 40 and the current supplied from the current supply unit 80 . In addition, the control unit 90 controls the electric potential of the main well 17 to discharge between the plasma gun 7 and the main well 17 . At this time, the control unit 90 sets the output of the plasma gun so that only the discharge energy (generated energy) for the sublimation of the film formation material Ma is obtained. In addition, the control unit 90 performs cooling by the cooling mechanism 30 when performing the film forming process. Therefore, it is possible to suppress plastic deformation or melting of the plating resist 35 by radiant heat based on the discharge energy of the plasma discharge (plasma generation) during film formation.

During maintenance, the vacuum chamber 10 is opened to the atmosphere. At this time, moisture in the atmosphere is adsorbed on the plating resist 35 . When the vacuum chamber 10 is sealed, the vacuum chamber 10 is evacuated. At this time, the plasma gun 7 is heated by the radiant heat of plasma discharge (plasma generation) to remove moisture in the vacuum chamber 10 . The control part 90 performs control with the control content different from the time of film-forming process. Thereby, the plasma gun 7 according to the In the operating mode used, plasma P is generated.

Fig. 2 is an enlarged view schematically showing the main hearth 17, the ring hearth 6 and the plasma P. As shown in FIG. 2 , the control unit 90 controls so that the plasma P is guided to the ring hearth 6 when the heating for moisture removal is performed. The plasma gun 7 performs electric discharge (plasma generation) with the ring hearth 6 to perform heating for moisture removal. At this time, the control unit 90 controls so that the plasma P is not guided to the main well 17 . Thereby, the sublimation of the film-forming material Ma is controlled. The control unit 90 controls so as to stop supply of the cooling medium to the cooling pipe 31 when performing heating for moisture removal. Thereby, the cooling mechanism 30 stops cooling when the plasma gun 7 is heating. At this time, the control unit 90 sets the output of the plasma gun 7 so that the plating resist 35 will not be plastically deformed or melted by radiant heat from the discharge energy of the plasma discharge even when cooling by the cooling mechanism 30 is stopped. The control unit 90 adjusts the output of the plasma gun 7 so that the heating temperature is suitable for moisture removal.

Actions and effects of the processing apparatus 1 of this embodiment will be described.

For example, when the vacuum chamber 10 is opened to the atmosphere for maintenance or the like, moisture in the atmosphere may be adsorbed in the vacuum chamber 10 (for example, the plating resist 35 ). The moisture adsorbed in this way cannot be removed only by vacuuming the vacuum chamber 10, which sometimes hinders the attainment of a high vacuum degree. On the other hand, the plasma generator 18 is heated by radiant heat H (refer to FIG. 2 ) by plasma discharge to remove moisture in the vacuum chamber 10 . At this time, the moisture adsorbed on the anti-plating plate 35 is evaporated by the radiant heat H, and removed from the vacuum chamber 10 by vacuum pumping. Thus, by using the plasma generating part (18) based on Radiant heat (H) of plasma discharge can remove moisture in the vacuum chamber (10). Therefore, by lowering the ultimate pressure of the vacuum in the vacuum chamber (10), a high degree of vacuum can be achieved. Thereby, when the film forming process is performed in the vacuum chamber (10), the process performance can be improved by improving the film quality.

The plasma generating unit 18 can generate plasma P according to a dedicated operation mode for removing moisture. In this way, only by adding a dedicated operation mode, it is possible to remove moisture using the existing plasma generating unit 18 without newly installing a heating device.

The processing apparatus 1 further includes a cooling mechanism 30 for cooling the vacuum chamber 10 during processing, and the cooling mechanism 30 can stop cooling when the plasma generating unit 18 is heating. At this time, since the vacuum chamber 10 is easily heated, moisture in the vacuum chamber 10 can be effectively removed without setting the discharge energy of the plasma discharge too high.

The processing device 1 further includes a cooling mechanism 30 for cooling the vacuum chamber 10 during processing. The vacuum chamber 10 may have a plating plate 35 covering the inner wall surface 10k, and the cooling mechanism 30 may cool the plating plate 35. At this time, the anti-plating plate 35 covers the inner wall surface 10k of the vacuum chamber 10, thereby preventing substances such as particles Mb from directly adhering to the inner wall surface 10k. This type of anti-plating plate 35 tends to become high temperature during processing, but by cooling the anti-plating plate 35 by the cooling mechanism 30, plastic deformation or melting due to high temperature can be suppressed.

The plasma generator 18 may have a pressure gradient type plasma gun 7 . In this case, heating by plasma discharge becomes easy.

The treatment can be to make the particles Mb of the film-forming material Ma adhere to A film-forming process for forming a film on the substrate 11. By removing moisture in the vacuum chamber 10 by the plasma generating part 18, the film forming process can be performed under a high vacuum degree, so the film quality of the film formed on the substrate 11 can be improved.

The processing device 1 further includes: a main hearth 17, which holds the film-forming material Ma at a holding position; and a ring hearth 6, which is arranged to surround the main hearth 17; At this time, even if the film-forming material Ma is not evacuated in the main hearth 17, it is possible to suppress the sublimation of the film-forming material Ma by the plasma P at the time of water removal.

The present invention is not limited to the above-mentioned embodiments.

In the above-mentioned embodiment, the ring hearth 6 is provided, but as shown in FIG. 3 , this ring hearth 6 may be omitted. In this case, the processing apparatus 1 may further include: a main hearth 17 for holding the film-forming material Ma at the holding position at the front end of the filling portion 17a; and an retraction mechanism 50 for retracting the film-forming material Ma from the holding position. At this time, the plasma generating unit 18 may be heated by discharging between the main furnace 17 and the film formation material Ma retracted from the holding position by the retracting mechanism 50 . The retraction mechanism 50 includes a retraction unit 51 , an operation unit 52 , and a drive unit 53 . The evacuation part 51 is a part which stores the film-forming material Ma in advance at the evacuation position on the lower side of the filling part 17a. The filling part 17a and the retreat part 51 have the through-hole 17c which communicates with each other. The operation part 52 is a part which operates the position of the film-forming material Ma in the through-hole 17c. The operation unit 52 is a pin-shaped member that expands and contracts so as to operate the film-forming material Ma from below. The driving unit 53 is a part that applies a driving force for extending and contracting the operation unit 52 . When removing moisture, the retraction mechanism 50 retracts the film-forming material Ma to a retracted position in advance. avoidance part 51. When the film formation process is performed, the retreat mechanism 50 moves the film formation material Ma to the front end of the filling portion 17a.

According to the structure shown in FIG. 3 , the film-forming material Ma retreats from the front end portion of the filling portion 17 a when removing water, and thus the sublimation of the film-forming material Ma by the plasma P can be suppressed. This eliminates the need to move the plasma P from the main hearth 17 to the ring hearth 6 when removing water, so the ring hearth 6 can be omitted.

In addition, the processing device 1 further includes: a main hearth 17, which holds the film-forming material Ma at the holding position at the front end of the filling part 17a; the plasma generating part 18 can use the discharge energy of the film-forming material Ma not to sublimate, and discharge between the main hearth to perform heating for removing moisture. In this case, when water is removed, it is possible to suppress the sublimation of the film-forming material Ma due to plasma. Thereby, since it is not necessary to move the plasma P from the main hearth 17 to the ring hearth 6 when removing moisture, the ring hearth 6 and the retracting mechanism 50 can be omitted.

In addition, the processing apparatus 1 is not limited to the film formation apparatus 100 mentioned above. For example, as shown in FIG. 4 , a negative ion irradiation device 200 can be used as the processing device 1 . At this time, as a process, a negative ion irradiation process of irradiating the substrate 11 with negative ions generated in the vacuum chamber 10 is performed. As shown in FIG. 4 , the negative ion irradiation device 200 includes a plasma generation unit 18 , an anode 201 , and a substrate arrangement unit 202 . The anode 201 is disposed on the side wall 10i opposite to the plasma generating portion 18 . The plasma generator 18 performs plasma discharge with the anode 201 . The substrate arrangement part 202 is a part where the substrate 11 on which the film is formed is arranged. The substrate placement portion 202 is provided on the bottom wall 10j. Moreover, the cooling mechanism 30 and the anti-plating plate 35 are provided with respect to side wall 10h, 10i. In addition, the anti-plating plate 35 can also be omitted. At this time, the cooling mechanism 30 can be installed in the vacuum chamber 10 Each of the walls is cooled.

As described above, in the vacuum chamber 10 , negative ions are generated by the plasma P, and the negative ions are irradiated on the film of the substrate 11 . In addition, the plasma generating unit 18 performs plasma discharge between the anode 201 and heats with radiation heat from the plasma discharge to remove moisture in the vacuum chamber 10 . By removing the moisture in the vacuum chamber 10 by the plasma generating part 18, the negative ion irradiation treatment can be performed under a high vacuum degree, so the efficiency of the negative ion irradiation can be improved. As a result, the film quality of the film of the substrate 11 irradiated with negative ions can be improved.

In addition, in the above-mentioned embodiment and modified example, the plating resist 35 was provided, but it may be omitted. In addition, the cooling mechanism 30 may also be omitted. Moreover, although the pressure gradient type plasma gun 7 is used as the plasma generation part 18, it will not specifically limit as long as it can generate|occur|produce plasma.

In addition, the film-forming method using plasma is not limited to the above-mentioned embodiment, and for example, a film-forming apparatus such as ECR plasma CVD, inductively coupled plasma CVD, surface wave plasma CVD, and helicon wave plasma CVD can also be used.

1: Processing device

2: Hearth mechanism

3: Handling mechanism

5: Steering coil

6: Ring hearth (auxiliary anode)

7(18): Plasma gun (plasma generation part)

9: Coil

10: Vacuum chamber (chamber)

10a: Moving room

10b: film forming chamber

10c: plasma port

10d: wall

10e: wall

10h (10W): side wall (wall part)

10i (10W): side wall (wall part)

10j (10W): bottom wall (wall)

10k: Inner wall surface

11: Substrate (object)

12: container

14: Film forming mechanism

15: Conveying roller

16: Substrate holding member

17: Main hearth (anode)

17a: filling part

17b: flange part

17c: through hole

20:Permanent magnet part

30: cooling mechanism

31: Cooling piping

32: cooling plate

35: anti-plating plate

40: Gas supply part

41: Gas supply port

60: Cathode

61: The first intermediate electrode (gate)

61a: permanent magnet

62: Second intermediate electrode (gate)

62a: electromagnetic coil

80: Current supply part

90: Control Department

100: film forming device

A: Transport direction

Ma: film-forming material

Mb: particle

P: Plasma

Claims (10)

A processing device that performs predetermined processing on an object; the processing device includes: a chamber for accommodating the aforementioned object and performing the aforementioned processing therein; and a plasma generating part, which generates plasma in the aforementioned chamber; The plasma generation part is heated by radiation heat generated by the plasma to remove moisture in the chamber. The processing device of claim 1, wherein, The plasma generating unit generates plasma according to a dedicated operation mode for removing moisture. The processing device of claim 1 or 2, wherein, It is further equipped with: a cooling mechanism for cooling the aforementioned chamber during the aforementioned processing; The cooling mechanism stops cooling when the plasma generating unit performs the heating. The processing device of claim 1 or claim 2, wherein, It is further equipped with: a cooling mechanism for cooling the aforementioned chamber during the aforementioned processing; The aforementioned chamber has an anti-plating plate covering the inner wall surface; The cooling mechanism cools the anti-plating plate. The processing device of claim 1 or claim 2, wherein, The plasma generating unit has a pressure gradient type plasma gun. The processing device of claim 1 or claim 2, wherein, The aforementioned treatment is a film-forming process in which particles of a film-forming material are attached to the aforementioned object to form a film. Such as the processing device of claim 6, wherein, it further has: an anode, which holds the aforementioned film-forming material in a holding position; and a retracting mechanism, which retracts the aforementioned film-forming material from the aforementioned holding position; The plasma generator generates plasma between the anode and the anode to perform the heating while the film-forming material is retracted from the holding position by the retraction mechanism. Such as the processing device of claim 6, wherein, it further has: an anode, which holds the aforementioned film-forming material in a holding position; The plasma generation unit generates plasma between the anode and the anode by using energy generated by the film-forming material without sublimation to perform the heating. Such as the processing device of claim 6, wherein, it further has: an anode that holds the aforementioned film-forming material in a holding position; and an auxiliary anode arranged to surround the aforementioned anode; The plasma generating unit generates plasma between the auxiliary anode and the heating. The processing device of claim 1 or claim 2, wherein, The aforementioned treatment is an anion irradiation treatment in which the anion generated in the aforementioned chamber is irradiated onto the aforementioned object.

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