TWI807253B - Semiconductor reaction device and method - Google Patents

Abstract

The present invention discloses a semiconductor reaction device and method. The semiconductor reaction device includes a vacuum chamber, a carrier unit, a heating unit, a gas distribution unit and an air inlet channel. Inside the vacuum chamber has a reaction space. The carrier unit is disposed in the reaction space and carries a substrate, wherein the substrate extends along a first direction and is disposed on the surface of the carrier unit. The heating unit is disposed at the periphery of the vacuum chamber. The gas distribution unit is disposed in the vacuum chamber. The air inlet channel is connected to the reaction space of the vacuum chamber through the gas distribution unit; wherein, after a reactant passes through the air inlet channel and passes through the gas distribution unit, it forms a gas flow entering the reaction space along a second direction, the first direction and the second direction are not perpendicular to each other.

Description

Semiconductor reaction device and reaction method

The present invention relates to a reaction device, in particular to a semiconductor reaction device and a reaction method applicable to a chemical vapor deposition (Chemical Vapor Deposition, CVD) process.

In the semiconductor industry, the application of integrated circuits or optoelectronic components is changing day by day and the size is becoming smaller and smaller. Chemical vapor deposition (CVD) is a chemical technique that can be used to produce solid materials with high purity and high performance. Among them, the semiconductor industry or the optoelectronic industry use this technology to deposit materials of different crystal forms (single crystal, polycrystalline, amorphous and epitaxial), and the deposited materials include diamond, diamond-like carbon (DLC), silicon, carbon fiber, carbon nanofiber, nanowire, carbon nanotube, silicon dioxide (SiO ₂ ), silicon germanium, tungsten, silicon carbon, silicon nitride, silicon oxynitride and various materials. In a typical chemical vapor deposition process, the substrate is exposed to one or more different reactive precursors, and a chemical reaction (deposition) or/and chemical decomposition (etching) occurs on the surface of the substrate to produce a thin film to be deposited.

Please refer to FIG. 1 , which is a schematic diagram of a conventional semiconductor reaction device. In the semiconductor reaction device 1 of FIG. 1 , the substrate W is arranged on the carrier platform 12 of the vacuum chamber 11, the reaction precursor can enter the vacuum chamber 11 through the gas distributor 14 through the gas distribution channel 13, and the heater 15 is arranged on the carrier platform 12 to heat the substrate W and the reaction space of the vacuum chamber 11. During the process of forming a thin film on the substrate W, the heater 15 can be heated to increase the temperature of the substrate W and the reaction space to the temperature required for the reaction. When one or more reactants enter the reaction space in the vacuum chamber 11 through the inlet channel 13, they can chemically react or/and chemically decompose with the substrate W to produce a thin film to be deposited.

However, in the conventional semiconductor reaction device 1, since the gas flow direction of the reactant after passing through the gas distributor 14 is from top to bottom, and the extension direction of the substrate W on the carrier table 12 is from left to right, the flow direction of the gas flow is almost perpendicular to the surface of the substrate W, and the heater 15 directly heats the substrate W and the vacuum chamber. The reaction space of the body 11 is also likely to cause instability of the gas flow direction of the reactants, which in turn makes the uniformity of the thin film formed on the substrate poor.

The object of the present invention is to provide a semiconductor reaction device and a reaction method. Compared with the conventional manufacturing process, the present invention can make the uniformity of the thin film formed on the substrate better.

To achieve the above purpose, the present invention provides a semiconductor reaction device, which includes a vacuum chamber, a stage unit, a heating unit, a gas distribution unit and an air inlet channel. The interior of the vacuum chamber has a reaction space; the stage unit is arranged in the reaction space and carries a substrate, wherein the substrate extends along a first direction and is arranged on the surface of the stage unit; the heating unit is arranged on the periphery of the vacuum chamber; the gas distribution unit is arranged in the vacuum chamber; the air inlet channel communicates with the reaction space of the vacuum chamber through the gas distribution unit; wherein, a reactant passes through the air inlet channel and passes through the gas distribution unit to form an airflow entering the reaction space along a second direction, and the first direction and the second direction are not perpendicular to each other.

To achieve the above object, the present invention proposes a reaction method for a semiconductor reaction device, comprising: carrying a substrate through a stage unit, wherein the stage unit is arranged in a reaction space inside a vacuum chamber, and the substrate extends along a first direction and is arranged on the surface of the stage unit; heating the vacuum chamber through a heating unit, wherein the heating unit is arranged on the periphery of the vacuum chamber; It is arranged in the vacuum cavity, and the air inlet channel communicates with the reaction space of the vacuum cavity through the gas distribution unit.

In one embodiment, there is an included angle between the first direction in which the substrate extends and the second direction in which the airflow flows, and the included angle is greater than 0 degrees and less than or equal to 45 degrees.

In one embodiment, the included angle is greater than or equal to 15 degrees and less than or equal to 30 degrees.

In one embodiment, the included angle is changed through the stage unit.

In one embodiment, the rotation of the stage unit drives the substrate to rotate.

In one embodiment, the heating unit includes a plurality of heaters, and the heaters are disposed on a plurality of sides of the vacuum chamber away from the reaction space.

In one embodiment, the heaters make the reaction space form a plurality of regions with different temperatures along the second direction.

In one embodiment, the heaters make the temperature of the region of the reaction space away from the gas distribution unit higher than the temperature of the region adjacent to the gas distribution unit.

In one embodiment, the semiconductor reaction device further includes an exhaust channel, which communicates with the reaction space, wherein the gas in the reaction space is exhausted through the exhaust channel.

In one embodiment, the reaction method further includes: changing the included angle through the stage unit.

In one embodiment, the reaction method further includes: rotating the stage unit to drive the substrate to rotate.

In one embodiment, the reaction method further includes: forming a plurality of regions of different temperatures in the reaction space along the second direction through a plurality of heaters of the heating unit, wherein the heaters are disposed on a plurality of sides of the vacuum chamber away from the reaction space.

In one embodiment, the reaction method further includes: making the temperature of the area of the reaction space away from the gas distribution unit higher than the temperature of the area adjacent to the gas distribution unit through the heaters.

In one embodiment, the reaction method further includes: exhausting the gas in the reaction space through an exhaust channel, wherein the exhaust channel communicates with the reaction space.

Based on the above, in the semiconductor reaction device and reaction method of the present invention, the heating unit is arranged on the periphery of the vacuum chamber, and the extension direction of the substrate on the stage unit (the first direction) is not perpendicular to the gas flow direction (the second direction) of the reactants entering the reaction space. The structural design can prevent the gas flow direction of the reactants from being disturbed, thereby improving the problem of poor uniformity of the thin film formed on the substrate in the prior art.

1,2: Semiconductor reaction device

11,21: Vacuum cavity

12: Carrying platform

13,25: Intake channel

14: Gas distributor

15, 231, 232, 233, 234: heater

211: Bottom

22: Stage unit

221: carrying platform

2211: surface

222: support

23: Heating unit

24: Gas distribution unit

26: exhaust channel

A1,A2,A3: area

D1: the first direction

D2: Second direction

S: reaction space

S01, S02, S03: steps

W: Substrate

FIG. 1 is a schematic diagram of a conventional semiconductor reaction device.

FIG. 2 is a schematic diagram of a semiconductor reaction device according to an embodiment of the present invention.

3 is a schematic diagram of the relationship between the extending direction of the substrate and the flow direction of the reactants entering the reaction space in the semiconductor reaction device of FIG. 2 .

FIG. 4 is another schematic diagram of the semiconductor reaction device in FIG. 2 .

FIG. 5 is a schematic diagram of the process steps of the reaction method of the semiconductor reaction device according to an embodiment of the present invention.

The semiconductor reaction device and reaction method according to the preferred embodiments of the present invention will be described below with reference to the relevant drawings, wherein the same elements will be described with the same reference symbols.

2 is a schematic diagram of a semiconductor reaction device according to an embodiment of the present invention. FIG. 3 is a schematic diagram of the relationship between the extending direction of the substrate and the flow direction of the reactant entering the reaction space in the semiconductor reaction device of FIG. 2 , and FIG. 4 is another schematic diagram of the semiconductor reaction device of FIG. 2 .

Please refer to FIG. 2 and FIG. 3 , the semiconductor reaction device 2 can be applied to a chemical vapor deposition (CVD) process. The semiconductor reaction device 2 may include a vacuum chamber 21 , a stage unit 22 , a heating unit 23 , a gas distribution unit 24 and an air inlet channel 25 . In addition, the semiconductor reaction device 2 of this embodiment may further include an exhaust channel 26 .

There is a reaction space S inside the vacuum chamber 21 . Here, the reaction space S is a processing space where reactants (such as reaction precursors, Precursors) enter the vacuum chamber 21 and react or/and chemically decompose with the substrate W to generate a thin film to be deposited. In some embodiments, the vacuum cavity 21 may be made of quartz or metal materials. In some embodiments, the vacuum cavity 21 may have a substrate access channel (not shown), and the substrate W may enter/exit the vacuum cavity 21 through the substrate access channel. Here, the substrate W can be transferred from the substrate access channel to the vacuum chamber 21 by using the transfer mechanism and placed on the stage unit 22 , or the substrate W can be transferred from the stage unit 22 to the outside of the vacuum chamber 21 by the substrate access channel. In some embodiments, the substrate W may be, for example, a wafer (Wafer), and is made of light-transmitting or opaque materials, such as sapphire (Sapphire) substrate, gallium arsenide (GaAs) substrate, or silicon carbide (SiC) substrate, without limitation. In some embodiments, the substrate W may have a film layer on it.

The stage unit 22 is disposed in the vacuum cavity 21 and can carry the substrate W. As shown in FIG. Here, the substrate W extends along a first direction D1 and is disposed on the surface 2211 of the stage unit 22 . In this embodiment, the stage unit 22 has a stage 221 and a supporting member 222 connected to the stage 221 . Wherein, the surface 2211 of the carrying platform 221 is used for carrying the substrate W, and the supporting member 222 can extend from the bottom of the vacuum chamber 21 into the reaction space S, and one end thereof is connected to the carrying platform 221 . In this embodiment, relative to the support 222 or the bottom surface of the vacuum cavity 21 211 , since the carrier 221 is inclined and its surface 2211 extends along the first direction D1 , the substrate W also extends along the first direction D1 and is disposed on the carrier unit 22 .

The heating unit 23 is disposed on the periphery of the vacuum cavity 21 . Wherein, the heating unit 23 can heat the vacuum chamber 21 so that the temperature of the reaction space S between the substrate W and the vacuum chamber 21 can reach the temperature required for the process of chemical reaction or/and chemical decomposition. Compared with conventional heaters arranged in the vacuum chamber 21 (as shown in FIG. 1 ), the heating unit 23 of this embodiment is arranged on the periphery of the vacuum chamber 21, so that the reaction precursors or other gases entering the reaction space S can be prevented from contaminating the heating unit 23. As shown in FIG. 2 , the heating unit 23 of this embodiment includes two heaters 231 , 232 , and the heaters 231 , 232 are disposed on the side of the vacuum cavity 21 away from the reaction space S. As shown in FIG. Here, the heater 231 is disposed on the upper side of the vacuum chamber 21 , and the heater 232 is disposed on the lower side of the vacuum chamber 21 . In addition, as shown in FIG. 4 , the heating unit 23 of this embodiment may further include a third heater 233 and a fourth heater 234. The third heater 233 and the fourth heater 234 are correspondingly arranged on the left and right sides of the vacuum chamber 21 away from the reaction space S, thereby heating the four sides of the vacuum chamber 21, so that the heating efficiency of the substrate W and the reaction space S is faster.

The semiconductor reaction device 2 of this embodiment can also form multiple regions of different temperatures in the reaction space S in the vacuum chamber 21 along the second direction D2 through the heating unit 23 (heaters 231 , 232 , 233 , 234 ) ( FIG. 2 ). In some embodiments, the heaters 231 , 232 , 233 , 234 can control the heating temperature in sections, so that the reaction temperatures of the three regions A1 , A2 , A3 extending along the first direction D1 of the reaction space S are different from each other. In some embodiments, the temperature control ranges of the three areas A1 , A2 , and A3 are, for example, respectively as follows: 25-1000° C. for the area A1 , 25-1000° C. for the area A2 , and 25-1000° C. for the area A3 . In some embodiments, the heaters 231, 232, 233, 234 make the temperature of the region of the reaction space S away from the gas distribution unit 24 higher than the temperature of the region adjacent to the gas distribution unit 24 (i.e., the temperature in region A1<the temperature in region A2<the temperature in region A3). Through the design of the heating unit 23 to control the temperature of the vacuum cavity 21 in different regions, the uniformity of the thin film formed on the substrate W can be improved.

In some embodiments, when the heaters 231, 232, 233, and 234 are heated, the heat energy directed to the outside of the vacuum chamber 21 can be reflected back to the vacuum chamber 21 by using, for example, a reflector. The reflector is, for example, but not limited to a mirror, a reflective sheet or a reflective film layer, which can reflect the heat energy directed to the outside of the vacuum chamber 21 back to the vacuum chamber 21, thereby improving the heating efficiency of the heaters 231, 232, 233, and 234. In some embodiments, for In order to increase the temperature rise rate of the substrate and the reaction space S, the material of the vacuum cavity 21 can also use radiation-transparent materials, so that thermal radiation can pass through to increase the temperature rise rate of the substrate and the reaction space S by radiation heating.

The gas distribution unit 24 is disposed in the vacuum chamber 21 , and the gas inlet channel 25 communicates with the reaction space S of the vacuum chamber 21 through the gas distribution unit 24 . Specifically, the inlet channel 25 of this embodiment is located on the side wall (for example, the left side wall) of the vacuum chamber 21, so that reactants (such as reaction precursors) can enter the reaction space S through the inlet channel 25; and, in order to make the entering reactants evenly distributed in the reaction space S, this embodiment uses the gas distribution unit 24 to distribute the reactants, so that the reactants entering the vacuum chamber 21 can be evenly distributed in the reaction space S, and then the film formation process can be more uniform. Wherein, when the reactant passes through the gas distribution unit 24 through the gas inlet channel 25 , a gas flow entering the reaction space S along a second direction D2 can be formed. Here, the first direction D1 and the second direction D2 are not perpendicular to each other. Specifically, as shown in FIG. 2 , since the substrate W (and the carrying platform 221 ) are arranged obliquely, the substrate W extends along the first direction D1, and the gas flow direction of the reactants entering the reaction space S through the gas distribution unit 24 is roughly the second direction D2. Therefore, there is an angle θ between the first direction D1 where the substrate W extends and the second direction D2 of the gas flow ( FIG. 3 ), and the angle θ is greater than 0 degrees and less than 90 degrees. In some embodiments, the included angle θ may be greater than 0 degrees but less than or equal to 45 degrees; a preferred included angle θ may be greater than or equal to 15 degrees but less than or equal to 30 degrees.

In some embodiments, the aforementioned angle θ can be changed through the stage unit 22, for example, the inclination angle of the surface 2211 of the stage 221 can be increased (or decreased) automatically or manually, thereby increasing (or decreasing) the angle θ between the first direction D1 in which the substrate W extends and the second direction D2 in which the airflow flows. In some embodiments, the support member 222 of the stage unit 22 can be driven to rotate by using, for example, a motor (and a gearbox), so that the substrate W can be driven to rotate through the rotation of the stage unit 22, thereby improving the film properties (such as uniformity) formed on the substrate W. In some embodiments, when the stage unit 22 drives the substrate W to rotate in the reaction space S, the aforementioned included angle θ may or may not change, and is not limited. In addition, the included angle between the surface 2211 of the carrying platform 221 of the carrying platform unit 22 of this embodiment and the second direction D2 is the same as the above-mentioned angle θ, but it is not limited thereto. In some embodiments, the included angle between the surface 2211 of the carrying platform 221 and the second direction D2 can also be different from the above-mentioned included angle θ.

The exhaust channel 26 is located on a side wall of the vacuum cavity 21 and communicates with the reaction space S. In this embodiment, the intake channel 25 and the exhaust channel 26 are respectively located on opposite sides of the vacuum cavity 21 . In some embodiments, an exhaust unit (not shown in the figure, such as a vacuum pump) can be used to exhaust the reaction space S through the exhaust channel 26 gas discharge. In some processes, the heating unit 23 can heat the vacuum chamber 21 to increase the temperature of the substrate W and the reaction space S to the temperature required for the reaction, and the reactants can enter the reaction space S through the gas distribution unit 24 through the gas inlet channel 25, so that the reactants can chemically react or/and decompose with the substrate W, and then exhaust the excess reactants and/or by-products in the reaction space S through the exhaust unit and the exhaust channel 26. In some embodiments, after the reactant enters the reaction space S and undergoes chemical reaction or/and chemical decomposition, there may be redundant reactants and/or by-products in the reaction space S, and non-reactants (such as inert gases, such as nitrogen or argon) can be used to enter the reaction space S through the inlet channel 25, and are discharged through the exhaust channel 26 and the exhaust unit. The cooling rate (such as large flow rate, faster cooling rate).

As mentioned above, in the semiconductor reaction device 2 of this embodiment, the heating unit 23 is arranged on the periphery of the vacuum chamber 21, and the extension direction of the substrate W on the stage unit 22 (the first direction D1) is not perpendicular to the gas flow direction (the second direction D2) of the reactants entering the reaction space S. The structural design can prevent the gas flow direction of the reactants from being disturbed, thereby improving the problem of poor uniformity of the thin film formed on the substrate W in the prior art.

In one embodiment of the thin film deposition process, the thin film deposited on the substrate W may be, for example, a gallium nitride (GaN) layer, and the reactant may be, for example, a gallium-containing compound (such as triethylgallium, Triethylgallium, (C ₂ H ₅ ) ₃ Ga)) and ammonia (NH ₃ ); In an embodiment, for example, taking an oxide (such as O ₂ , H ₂ O, or H ₂ O _{2 )} to etch the germanium film layer on the substrate W as an example, the reactant may be an oxide.

Please refer to FIG. 5 , which is a schematic flow chart of the reaction method of the semiconductor reaction device according to an embodiment of the present invention.

The present invention also proposes a reaction method of a semiconductor reaction device, which is used in conjunction with the aforementioned semiconductor reaction device 2. The specific technical content of the semiconductor reaction device 2 has been described in detail above, and will not be repeated. The reaction method of the present invention may at least include the following steps: carrying the substrate through the stage unit, wherein the stage unit is arranged in the reaction space inside the vacuum chamber, and the substrate extends along the first direction and is arranged on the surface of the stage unit (step S01); heating the vacuum chamber through the heating unit, wherein the heating unit is arranged in the vacuum chamber. The periphery of the cavity body (step S02); and, after the reactants pass through the gas distribution unit through the gas distribution unit, a gas flow entering the reaction space along the second direction is formed, wherein the first direction and the second direction are not perpendicular to each other, the gas distribution unit is arranged in the vacuum chamber, and the gas distribution unit communicates with the reaction space of the vacuum chamber through the gas distribution unit (step S03).

Please refer to FIG. 2 to FIG. 4 together with FIG. 5 to illustrate the above steps. First, as shown in FIG. 2 , step S01 is: carrying the substrate W through the stage unit 22, wherein the stage unit 22 is disposed in the reaction space S inside the vacuum chamber 21, and the substrate W extends along the first direction D1 and is disposed on the surface 2211 of the stage unit 22. Next, proceed to step S02 : heating the vacuum cavity 21 through the heating unit 23 , wherein the heating unit 23 is disposed on the periphery of the vacuum cavity 21 . Afterwards, step S03 is performed: after the reactant passes through the gas distribution unit 24 through the gas distribution unit 24, the gas flow entering the reaction space S along the second direction D2 is formed, wherein the first direction D1 and the second direction D2 are not perpendicular to each other, the gas distribution unit 24 is arranged in the vacuum cavity 21, and the gas intake channel 25 communicates with the reaction space S of the vacuum cavity 21 through the gas distribution unit 24. The order of the above steps S02 and S03 can be reversed.

In some embodiments, as shown in FIG. 3 , there is an included angle θ between the first direction D1 where the substrate W extends and the second direction D2 where the airflow flows. The included angle θ may be greater than 0 degrees but less than or equal to 45 degrees; a preferred included angle θ may be greater than or equal to 15 degrees but less than or equal to 30 degrees; as shown in FIG. 2 , in some embodiments, the reaction method may further include: changing the included angle θ through the stage unit 22; In some embodiments, as shown in FIG. 2 and FIG. 4 , the reaction method may further include: forming multiple (three) regions (A1, A2, A3) of different temperatures in the reaction space S along the second direction D2 through multiple (four) heaters 231, 232, 233, 234 of the heating unit 23, wherein these heaters 231, 232, 233, 234 are arranged on multiple (four) sides of the vacuum chamber 21 away from the reaction space S; Including: using the heaters 231, 232, 233, 234 to make the temperature of the area of the reaction space S away from the gas distribution unit 24 higher than the temperature of the area adjacent to the gas distribution unit 24;

In addition, other technical contents of the reaction method of the semiconductor reaction device have been described in detail above, and will not be further described here.

To sum up, in the semiconductor reaction device and reaction method of the present invention, the heating unit is arranged on the periphery of the vacuum chamber, and the extension direction of the substrate on the stage unit (the first direction) is not perpendicular to the gas flow direction (the second direction) of the reactant entering the reaction space. The structural design can prevent the gas flow direction of the reactant from being disturbed, thereby improving the problem of poor uniformity of the thin film formed on the substrate in the prior art.

The above descriptions are illustrative only, not restrictive. Any equivalent modification or change made without departing from the spirit and scope of the present invention shall be included in the scope of the appended patent application.

2: Semiconductor reaction device

21: Vacuum cavity

211: Bottom

22: Stage unit

221: carrying platform

2211: surface

222: support

23: Heating unit

231,232: Heater

24: Gas distribution unit

25: Intake channel

26: exhaust channel

A1,A2,A3: area

D1: the first direction

D2: Second direction

S: reaction space

W: Substrate

Claims (12)

A semiconductor reaction device, comprising: a vacuum chamber, which has a reaction space inside, and the vacuum chamber uses radiation-transmissible materials; a stage unit, which is arranged in the reaction space and carries a substrate, wherein the stage unit is tilted and rotated, and its surface extends along a first direction, and the substrate extends along the first direction and is arranged on the surface of the stage unit; a heating unit, which is arranged on the periphery of the vacuum chamber; a reflector, which reflects heat energy directed outside the vacuum chamber back to the vacuum chamber; , arranged in the vacuum chamber; and an air inlet passage, communicated with the reaction space of the vacuum chamber through the gas distribution unit; wherein, a reactant passes through the air inlet passage and passes through the gas distribution unit to form an airflow entering the reaction space along a second direction, and the first direction and the second direction are not perpendicular to each other; the heating unit includes a plurality of heaters, and these heaters are arranged on multiple sides of the vacuum chamber away from the reaction space, so that the reaction space forms a plurality of regions with different temperatures along the second direction, and the temperature of the region away from the gas distribution unit is higher than that adjacent to the gas distribution unit temperature in the area. The semiconductor reaction device according to claim 1, wherein an angle is formed between the first direction in which the substrate extends and the second direction in which the gas flow flows, and the angle is greater than 0 degrees and less than or equal to 45 degrees. The semiconductor reaction device according to claim 2, wherein the included angle is greater than or equal to 15 degrees and less than or equal to 30 degrees. The semiconductor reaction device according to claim 2 or 3, wherein the included angle is changed through the stage unit. The semiconductor reaction device as claimed in claim 1, wherein the rotation of the stage unit drives the substrate to rotate. The semiconductor reaction device as claimed in claim 1, further comprising: an exhaust channel communicating with the reaction space, wherein the gas in the reaction space is exhausted through the exhaust channel. A reaction method of a semiconductor reaction device, comprising: Carrying a substrate through a stage unit, wherein the stage unit is arranged in a reaction space inside a vacuum chamber, the stage unit is tilted and rotated and its surface extends along a first direction, the substrate extends along the first direction and is arranged on the surface of the stage unit, the vacuum chamber uses a radiation-transmissible material; the vacuum chamber is heated through a heating unit, wherein the heating unit is arranged on the periphery of the vacuum chamber; heat energy projected to the outside of the vacuum chamber is reflected back to the vacuum chamber through a reflector; The reactant passes through an air inlet channel and a gas distribution unit to form a gas flow entering the reaction space along a second direction, wherein the first direction and the second direction are not perpendicular to each other. The gas distribution unit is arranged in the vacuum chamber, and the air inlet passage communicates with the reaction space of the vacuum chamber through the gas distribution unit; the reaction space forms a plurality of regions with different temperatures along the second direction through a plurality of heaters of the heating unit, wherein the heaters are arranged on multiple sides of the vacuum chamber away from the reaction space; through the heaters, the reaction space is far away from the gas distribution unit. The temperature of the zone is higher than the temperature of the zone adjacent to the gas distribution unit. The reaction method according to claim 7, wherein an angle is formed between the first direction in which the substrate extends and the second direction in which the gas flows, and the angle is greater than 0 degrees and less than or equal to 45 degrees. The reaction method as claimed in item 8, wherein the included angle is greater than or equal to 15 degrees and less than or equal to 30 degrees. The reaction method as claimed in item 8 or 9 further includes: changing the included angle through the stage unit. The reaction method as claimed in item 7 further includes: rotating the stage unit to drive the substrate to rotate. The reaction method according to claim 7, further comprising: exhausting the gas in the reaction space through an exhaust channel, wherein the exhaust channel communicates with the reaction space.

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