TWI806943B - Process circuit board, multilayer circuit board, and circuit board with cover film manufacturing method, and film with adhesive layer - Google Patents

Process circuit board, multilayer circuit board, and circuit board with cover film manufacturing method, and film with adhesive layer Download PDF

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TWI806943B
TWI806943B TW107145685A TW107145685A TWI806943B TW I806943 B TWI806943 B TW I806943B TW 107145685 A TW107145685 A TW 107145685A TW 107145685 A TW107145685 A TW 107145685A TW I806943 B TWI806943 B TW I806943B
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adhesive layer
film
layer
circuit
substrate
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TW107145685A
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TW201934710A (en
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細田朋也
笠井涉
山邊敦美
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日商Agc股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/281Applying non-metallic protective coatings by means of a preformed insulating foil
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • C09J201/005Dendritic macromolecules
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • H05K3/4655Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern by using a laminate characterized by the insulating layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09Treatments involving charged particles
    • H05K2203/095Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

提供一種處理電路基板之製造方法與附接著劑層之薄膜。 本發明之處理電路基板之製造方法,係將具有聚合物層與導體電路之電路基板的導體電路側表面施行電漿處理而獲得具電漿處理面之電路基板,隨後在低於260℃下使前述電路基板的電漿處理面與具接著劑層之基板的接著劑層進行熱壓合,前述聚合物層包含四氟乙烯系聚合物且前述導體電路設於前述聚合物層表面;本發明之附接著劑層之薄膜,係依序積層有四氟乙烯系聚合物之薄膜與熱硬化性接著劑層,且在壓製溫度160℃、壓製壓力4MPa、壓製時間90分鐘之條件下使前述熱硬化性接著劑層硬化後,前述薄膜與硬化後之前述熱硬化性接著劑層之界面的剝離強度為5N/cm以上。Provided are a manufacturing method for processing a circuit substrate and a thin film for attaching an adhesive layer. The manufacturing method of the processed circuit substrate of the present invention is to apply plasma treatment to the conductive circuit side surface of the circuit substrate having the polymer layer and the conductive circuit to obtain the circuit substrate with the plasma treated surface, and then heat-compress the plasma treated surface of the aforementioned circuit substrate and the adhesive layer of the substrate with the adhesive layer at a temperature lower than 260 ° C. The aforementioned polymer layer contains tetrafluoroethylene polymer and the aforementioned conductive circuit is arranged on the surface of the aforementioned polymer layer; Adhesive adhesive layer, and after the aforementioned thermosetting adhesive layer is hardened under the conditions of pressing temperature 160°C, pressing pressure 4 MPa, and pressing time 90 minutes, the peel strength of the interface between the aforementioned film and the hardened aforementioned thermosetting adhesive layer is 5 N/cm or more.

Description

處理電路基板、多層電路基板及附覆蓋薄膜之電路基板之製造方法、以及附接著劑層之薄膜Process circuit board, multilayer circuit board, and circuit board with cover film manufacturing method, and film with adhesive layer

本發明涉及處理電路基板、多層電路基板及附覆蓋薄膜之電路基板之製造方法、以及附接著劑層之薄膜。The present invention relates to a method for manufacturing a processed circuit substrate, a multilayer circuit substrate, and a circuit substrate with a cover film, and a film for attaching an adhesive layer.

隨著電子機器、電性機器的小型化及高機能化,導體電路經多層化之多層電路基板或附覆蓋薄膜之電路基板的需求日益增加。此等電路基板的製造,現正採用將已於聚醯亞胺薄膜表面設有導體電路之原電路基板、與具熱硬化性接著劑層之基板(接著劑片(接合片)或覆蓋薄膜)熱壓合的方式。With the miniaturization and high-performance of electronic equipment and electrical equipment, the demand for multilayer circuit substrates with multi-layer conductor circuits or circuit substrates with cover films is increasing. The manufacture of these circuit boards is currently adopting the method of thermocompression bonding the original circuit board with the conductor circuit on the surface of the polyimide film and the substrate with a thermosetting adhesive layer (adhesive sheet (adhesive sheet) or cover film).

再者近年來,此等電路基板係被要求具有可對應高頻段之頻率的電特性(低介電係數等)、及可耐受焊料回流的耐熱性。然而,以往的聚醯亞胺薄膜電特性不足。 對此,專利文獻1提出一種多層電路基板,其使用了液晶聚合物薄膜作為原電路基板之絕緣材料層、接著劑片或覆蓋薄膜。Furthermore, in recent years, these circuit boards are required to have electrical characteristics (low dielectric coefficient, etc.) that can cope with high-frequency bands, and heat resistance that can withstand solder reflow. However, conventional polyimide thin films have insufficient electrical characteristics. In this regard, Patent Document 1 proposes a multilayer circuit board, which uses a liquid crystal polymer film as an insulating material layer, an adhesive sheet or a cover film of the original circuit board.

專利文獻2提出一種可撓式金屬積層板及使用其之可撓式印刷基板,該可撓式金屬積層板具有:聚醯亞胺薄膜、設於該聚醯亞胺薄膜表面並具有接著性基團之熔點280~320℃的氟聚合物層、及設於該層表面之金屬箔。Patent Document 2 proposes a flexible metal laminate and a flexible printed substrate using the same. The flexible metal laminate has: a polyimide film, a fluoropolymer layer on the surface of the polyimide film and having an adhesive group with a melting point of 280-320°C, and a metal foil on the surface of the layer.

專利文獻3、4、5及6提出一種覆蓋薄膜,其具有聚醯亞胺薄膜與含有氟聚合物之接著劑層,可作為電特性優良且電路基板之傳輸損耗低的覆蓋薄膜。Patent Documents 3, 4, 5 and 6 propose a cover film having a polyimide film and an adhesive layer containing a fluoropolymer, which can be used as a cover film with excellent electrical characteristics and low transmission loss of a circuit board.

先前技術文獻 專利文獻 專利文獻1:日本特開2014-042043號公報 專利文獻2:國際公開第2015/080260號 專利文獻3:日本特開2014-032980號公報 專利文獻4:日本特開2014-197611號公報 專利文獻5:日本特開2015-133480號公報 專利文獻6:日本特開2015-176921號公報prior art literature patent documents Patent Document 1: Japanese Patent Laid-Open No. 2014-042043 Patent Document 2: International Publication No. 2015/080260 Patent Document 3: Japanese Patent Laid-Open No. 2014-032980 Patent Document 4: Japanese Patent Laid-Open No. 2014-197611 Patent Document 5: Japanese Patent Laid-Open No. 2015-133480 Patent Document 6: Japanese Patent Laid-Open No. 2015-176921

發明欲解決之課題 耐熱性之液晶聚合物因其熔點高達例如270℃以上,故在製造這些電路基板時,必須將原電路基板與接著性之基板在270℃以上的高溫下進行熱壓合。 因此,在使用了液晶聚合物薄膜的情況下,一般用在以熱硬化性接著劑作為接著劑層成分之接著性基板的壓製裝置因其熱壓合之設定溫度低至例如低於220℃,故無法對應,復又需要能對應高溫熱壓合的壓製裝置。又,一旦在270℃以上高溫下進行熱壓合,亦有液晶聚合物薄膜熔融而導體電路位置偏離的狀況。The problem to be solved by the invention Heat-resistant liquid crystal polymer has a melting point as high as 270°C or higher, so when manufacturing these circuit boards, the original circuit board and the adhesive substrate must be thermally bonded at a high temperature of 270°C or higher. Therefore, in the case of using a liquid crystal polymer film, a press device generally used for an adhesive substrate that uses a thermosetting adhesive as an adhesive layer component cannot be used because the set temperature for thermocompression bonding is as low as, for example, lower than 220° C., and a press device that can handle high temperature thermocompression bonding is required. In addition, once thermocompression bonding is performed at a high temperature of 270° C. or higher, the liquid crystal polymer film may melt and the position of the conductor circuit may be displaced.

在將專利文獻2之可撓式印刷基板與接著性基板進行熱壓合時,亦需要氟聚合物熔點以上的高溫(例如280℃以上),而出現與使用了液晶聚合物時同樣的問題。 遂需一種在較低的溫度下將原電路基板與接著性基板熱壓合而製造多層電路基板或附覆蓋薄膜之電路基板的方法。When thermocompression-bonding the flexible printed circuit board of Patent Document 2 and the adhesive substrate, a high temperature (for example, 280° C. or higher) above the melting point of the fluoropolymer is required, and the same problem occurs when liquid crystal polymer is used. Therefore, there is a need for a method for manufacturing a multilayer circuit substrate or a circuit substrate with a cover film by thermally bonding the original circuit substrate and the adhesive substrate at a lower temperature.

在覆蓋薄膜等接著性基板方面,亦正需要一種具備在較低溫度之熱壓合下的接著性與電特性的基板。即,為能使專利文獻3、4、5及6之具有含氟聚合物之接著劑層的覆蓋薄膜亦展現接著性,熱壓合時必須進行氟聚合物熔點以上的高溫加熱,遂需能夠進行一般壓製裝置無法對應之高溫熱壓合的特殊壓製裝置。In terms of adhesive substrates such as cover films, there is also a need for a substrate with adhesive properties and electrical properties under relatively low temperature thermocompression bonding. That is, in order to make the cover films with the adhesive layer of the fluoropolymer in Patent Documents 3, 4, 5 and 6 also exhibit adhesiveness, it is necessary to heat at a high temperature above the melting point of the fluoropolymer during thermocompression bonding, and a special press device capable of performing high temperature thermocompression bonding that cannot be handled by general press devices is required.

本發明之目的在於提供一種製造方法,其能夠在較低的溫度下將接著性基板與電路基板熱壓合以製造多層電路基板或附覆蓋薄膜之電路基板等;以及一種接著性基板,其充份展現電特性並且即便以較低溫度熱壓合亦充份展現接著性。The object of the present invention is to provide a manufacturing method capable of thermocompressing an adhesive substrate and a circuit substrate at a relatively low temperature to manufacture a multilayer circuit substrate or a circuit substrate with a cover film, etc.;

用以解決課題之手段 本發明具有下述態樣。 (1)一種處理電路基板之製造方法,其特徵在於:將具有聚合物層與導體電路之電路基板的導體電路側表面施行電漿處理而獲得具電漿處理面之電路基板,隨後在低於260℃下使前述電路基板的電漿處理面與具接著劑層之基板的接著劑層進行熱壓合以製造處理電路基板,前述聚合物層包含四氟乙烯系聚合物且導體電路設於前述聚合物層表面。 (2)如上述(1)之製造方法,其中前述處理電路基板之熱壓合面的剝離強度為5N/cm以上。 (3)如上述(1)或(2)之製造方法,其中前述具接著劑層之基板為附接著劑層之覆蓋薄膜,前述處理電路基板為附覆蓋薄膜之電路基板;或者,前述具接著劑層之基板為接著劑片,前述處理電路基板為附接著層之電路基板。means to solve problems The present invention has the following aspects. (1) A manufacturing method of a processed circuit substrate, characterized in that: plasma treatment is performed on the conductive circuit side surface of the circuit substrate having a polymer layer and a conductive circuit to obtain a circuit substrate with a plasma-treated surface, and then the plasma-treated surface of the aforementioned circuit substrate and the adhesive layer of the substrate with an adhesive layer are thermally bonded at a temperature lower than 260 ° C to manufacture a processed circuit substrate. (2) The production method according to (1) above, wherein the peel strength of the thermocompression bonded surface of the processed circuit board is 5 N/cm or more. (3) The manufacturing method according to (1) or (2) above, wherein the aforementioned substrate with an adhesive layer is a cover film with an adhesive layer attached, and the aforementioned processed circuit substrate is a circuit substrate with a covered film; or, the aforementioned substrate with an adhesive layer is an adhesive sheet, and the aforementioned processed circuit substrate is a circuit substrate with an adhesive layer attached.

(4)如上述(1)至(3)之製造方法,其經由前述電漿處理使前述具電漿處理面之電路基板的前述聚合物層之暴露面的濕潤張力為30mN/m以上。 (5)如上述(1)至(4)之製造方法,其中前述四氟乙烯系聚合物具有選自於由含羰基之基團、羥基、環氧基、醯胺基、胺基及異氰酸酯基所構成群組中之至少1種官能基。 (6)如上述(1)~(5)之製造方法,其中前述四氟乙烯系聚合物的熔點為260℃以上。 (7)如上述(1)~(6)之製造方法,其中前述接著劑層為含橡膠改質環氧樹脂及硬化劑的熱硬化性接著劑層。 (8)如上述(1)~(7)之製造方法,其中前述具接著劑層之基板為如下所述之基板:在壓製溫度160℃、壓製壓力4MPa且壓製時間90分鐘之條件下使前述電路基板的電漿處理面與前述具接著劑層之基板的接著劑層進行熱壓合後,前述處理電路基板之熱壓合面的剝離強度為5N/cm以上。(4) The production method according to (1) to (3) above, wherein the wetting tension of the exposed surface of the polymer layer of the circuit board having a plasma-treated surface is 30 mN/m or more through the plasma treatment. (5) The production method according to (1) to (4) above, wherein the tetrafluoroethylene-based polymer has at least one functional group selected from the group consisting of a carbonyl-containing group, a hydroxyl group, an epoxy group, an amide group, an amine group, and an isocyanate group. (6) The production method according to (1) to (5) above, wherein the tetrafluoroethylene-based polymer has a melting point of 260° C. or higher. (7) The production method according to (1) to (6) above, wherein the adhesive layer is a thermosetting adhesive layer containing a rubber-modified epoxy resin and a hardener. (8) The manufacturing method according to (1) to (7) above, wherein the aforementioned substrate with an adhesive layer is a substrate as follows: after the plasma-treated surface of the aforementioned circuit substrate and the adhesive layer of the aforementioned substrate with an adhesive layer are thermally bonded under the conditions of a pressing temperature of 160° C., a pressing pressure of 4 MPa, and a pressing time of 90 minutes, the peel strength of the thermally-pressed surface of the aforementioned treated circuit substrate is 5 N/cm or more.

(9)一種多層電路基板之製造方法,其特徵在於:將具有聚合物層與導體電路之電路基板的導體電路側表面施行電漿處理而獲得具電漿處理面的電路基板,隨後使多數前述具電漿處理面之電路基板的電漿處理面各自相對並於各電漿處理面間配置接著劑片,使其在低於260℃下進行熱壓合以製造具多數層導體電路的多層電路基板,前述聚合物層包含四氟乙烯系聚合物且導體電路設於前述聚合物層表面。 (10)一種附覆蓋薄膜之電路基板之製造方法,其特徵在於:將具有聚合物層與導體電路之電路基板的導體電路側表面施行電漿處理而獲得具電漿處理面之電路基板,隨後在低於260℃下使該電路基板之電漿處理面與附接著劑層之覆蓋薄膜的接著劑層進行熱壓合以製造附覆蓋薄膜之電路基板,前述聚合物層包含四氟乙烯系聚合物且導體電路設於前述聚合物層表面。 (11)一種附接著劑層之薄膜,其特徵在於:依序積層有四氟乙烯系聚合物之薄膜與熱硬化性接著劑層,且在壓製溫度160℃、壓製壓力4MPa且壓製時間90分鐘之條件下使前述熱硬化性接著劑層硬化後,前述薄膜與硬化後之前述熱硬化性接著劑層之界面的剝離強度為5N/cm以上。(9) A method of manufacturing a multilayer circuit board, characterized in that: plasma treatment is performed on the side surface of the conductor circuit of the circuit board having the polymer layer and the conductor circuit to obtain a circuit board with a plasma-treated surface, and then the plasma-treated surfaces of the plurality of circuit boards with the plasma-treated surface are respectively opposed and an adhesive sheet is arranged between the plasma-treated surfaces, and thermal compression is performed at a temperature lower than 260° C. to manufacture a multi-layer circuit board with multiple layers of conductor circuits. (10) A method of manufacturing a circuit substrate with a cover film, characterized in that: plasma treatment is performed on the conductor circuit side surface of the circuit substrate having a polymer layer and a conductor circuit to obtain a circuit substrate with a plasma-treated surface, and then the plasma-treated surface of the circuit substrate and the adhesive layer of the cover film attached to the adhesive layer are subjected to thermal compression at a temperature lower than 260° C. to manufacture a circuit substrate with a cover film. (11) A film with an adhesive layer attached, characterized in that a tetrafluoroethylene-based polymer film and a thermosetting adhesive layer are sequentially laminated, and after the thermosetting adhesive layer is cured at a pressing temperature of 160° C., a pressing pressure of 4 MPa, and a pressing time of 90 minutes, the peel strength of the interface between the film and the hardened thermosetting adhesive layer is 5 N/cm or more.

(12)如上述(11)之附接著劑層之薄膜,其中前述四氟乙烯系聚合物具有選自於由含羰基之基團、羥基、環氧基、醯胺基、胺基及異氰酸酯基所構成群組中之至少1種官能基。 (13)如上述(11)或(12)之附接著劑層之薄膜,其中前述四氟乙烯系聚合物的熔點為260℃以上。 (14)如上述(11)~(13)之附接著劑層之薄膜,其中前述熱硬化性接著劑層為含橡膠改質環氧樹脂及硬化劑的熱硬化性接著劑層。 (15)如上述(11)~(14)之附接著劑層之薄膜,其係覆蓋薄膜或層間絕緣薄膜。(12) The adhesive layer-attached film according to (11) above, wherein the tetrafluoroethylene-based polymer has at least one functional group selected from the group consisting of carbonyl-containing groups, hydroxyl groups, epoxy groups, amido groups, amine groups, and isocyanate groups. (13) The adhesive layer-attached film according to (11) or (12) above, wherein the tetrafluoroethylene-based polymer has a melting point of 260°C or higher. (14) The adhesive layer-attached film according to (11) to (13) above, wherein the thermosetting adhesive layer is a thermosetting adhesive layer containing a rubber-modified epoxy resin and a curing agent. (15) The film for attaching the adhesive layer as described in (11) to (14) above, which is a cover film or an interlayer insulating film.

發明效果 依據本發明之製造方法,可在較低的溫度下將電路基板與接著性基板熱壓合以製造多層電路基板或附覆蓋薄膜之電路基板等處理電路基板。 依據本發明,可獲得一種附接著劑層之薄膜,其在較低的溫度下有優良的電特性且展現充分的接著性,並有效作為覆蓋薄膜或層間絕緣薄膜。Invention effect According to the manufacturing method of the present invention, the circuit substrate and the adhesive substrate can be heat-compressed at a relatively low temperature to manufacture multilayer circuit substrates or circuit substrates with cover films and other processed circuit substrates. According to the present invention, it is possible to obtain a film for attaching an adhesive layer, which has excellent electrical characteristics at relatively low temperatures and exhibits sufficient adhesiveness, and which is effective as a cover film or an interlayer insulating film.

以下用語之定義適用涵蓋本說明書及申請專利範圍。 「熱壓合之溫度」係壓製裝置之熱盤的設定溫度。 「熔點」係指與示差掃描熱量測定(DSC)法測得之熔解峰之最大值對應的溫度。 「濕潤張力」為依照JIS K 6768:1999(對應國際規格ISO 8296:1987)測得之值。濕潤張力之測定係於以浸濕有已知濕潤張力之試驗液的綿棒在試驗片上迅速擦過,形成6cm2 之液膜並觀察塗佈2秒後之液膜狀態,沒有發生破裂就表示有濕潤。不會引起液膜破裂的最大濕潤張力即為該試驗片的濕潤張力。另,JIS K 6768:1999中規定之試驗液的濕潤張力下限為22.6mN/m。The definitions of the following terms apply to this specification and the scope of the patent application. "The temperature of hot pressing" refers to the setting temperature of the hot plate of the pressing device. "Melting point" refers to the temperature corresponding to the maximum value of the melting peak measured by differential scanning calorimetry (DSC). "Wetting tension" is a value measured in accordance with JIS K 6768:1999 (corresponding to international standard ISO 8296:1987). The measurement of wetting tension is to quickly wipe the swab soaked with the test solution of known wetting tension on the test piece to form a 6cm 2 liquid film and observe the state of the liquid film 2 seconds after coating. If there is no rupture, it means wet. The maximum wetting tension that does not cause liquid film rupture is the wetting tension of the test piece. In addition, the lower limit of the wetting tension of the test solution specified in JIS K 6768:1999 is 22.6mN/m.

「處理電路基板之剝離強度」為下述方式所測得之值。將處理電路基板裁切成長150mm、寬度10mm,製作評估試樣。將聚合物層及導體電路與接著層之間從評估樣本之長度方向之一端剝離至50mm之位置。使用拉伸試驗機,在拉伸速度50mm/分下以形成90°之方式剝離,並以測定距離20mm至80mm為止之平均荷重(N/cm)作為剝離強度。"Peel strength of processed circuit board" is the value measured in the following manner. The processed circuit board was cut out to a length of 150 mm and a width of 10 mm to prepare evaluation samples. Peel off the polymer layer, the conductive circuit and the adhesive layer from one end of the evaluation sample in the longitudinal direction to a position of 50 mm. Using a tensile tester, peel at a tensile speed of 50 mm/min so as to form 90°, and measure the average load (N/cm) at a distance of 20 mm to 80 mm as the peel strength.

「附接著劑層之薄膜的剝離強度」為下述方式所測得之值。將熱硬化後之附接著劑層之薄膜裁切成長150mm、寬度10mm,製作評估試樣。將聚合物層與熱硬化後之熱硬化性接著層之間從評估樣本之長度方向之一端剝離至50mm之位置。使用拉伸試驗機,在拉伸速度50mm/分下以形成90°之方式剝離,並以測定距離20mm至80mm為止之平均荷重(N/cm)作為剝離強度。The "peel strength of the adhesive layer-attached film" is a value measured in the following manner. Cut the film with the adhesive layer after thermosetting to a length of 150 mm and a width of 10 mm to make an evaluation sample. The polymer layer and the thermosetting adhesive layer after thermosetting were peeled off to a position of 50 mm from one end of the evaluation sample in the longitudinal direction. Using a tensile tester, peel at a tensile speed of 50 mm/min so as to form 90°, and measure the average load (N/cm) at a distance of 20 mm to 80 mm as the peel strength.

「可熔融成形之聚合物」意指在荷重49N之條件下,於比樹脂熔點高20℃以上之溫度中存在有熔融流速為0.1~1000g/10分鐘之溫度的聚合物。 「熔融流速」為JIS K 7210-1:2014(符合國際規格ISO 1133-1:2011)所規定之熔體質量流率(MFR)。 「十點平均粗度(RzJIS )」為JIS B 0601:2013附屬書JA中所規定之値。"Melt-formable polymer" means a polymer that has a melt flow rate of 0.1 to 1000 g/10 minutes at a temperature 20°C higher than the melting point of the resin under a load of 49N. "Melt flow rate" is the melt mass flow rate (MFR) stipulated in JIS K 7210-1:2014 (conforming to international standard ISO 1133-1:2011). "Ten-point average roughness (Rz JIS )" is the value stipulated in JIS B 0601:2013 Appendix JA.

「單元」為聚合1分子單體而直接形成之原子團、與該原子團一部分行化學變換所得之原子團的總稱。基於單體之單元亦僅表記為「單元」。 「壓力」之値在未特別提及之前提下表示「絕對壓力」。 圖1~圖18均為示意性圖式,其等中的尺寸比為了方便說明而與實物不同。"Unit" is a general term for an atomic group formed directly by polymerizing one molecule of a monomer, and an atomic group obtained by chemically converting a part of the atomic group. Monomer-based units are also indicated only as "units". The value of "pressure" means "absolute pressure" unless otherwise mentioned. FIGS. 1 to 18 are all schematic diagrams, and the dimensional ratios among them are different from the real ones for convenience of description.

本發明之處理電路基板,係將具有聚合物層與導體電路之電路基板(以下亦記載為原電路基板)的導體電路側表面施行電漿處理而獲得具電漿處理面之電路基板,再在低於260℃下使前述電路基板的電漿處理面與具接著劑層之基板(以下亦記載為接著性基板)的接著劑層進行熱壓合而得,其中前述聚合物層包含四氟乙烯系聚合物(以下亦記載為F聚合物)(故以下亦將前述聚合物層記載為F層),且導體電路設於F層表面。The processed circuit substrate of the present invention is obtained by performing plasma treatment on the conductive circuit side surface of a circuit substrate having a polymer layer and a conductive circuit (hereinafter also referred to as the original circuit substrate) to obtain a circuit substrate with a plasma-treated surface, and then thermally pressing the plasma-treated surface of the aforementioned circuit substrate and the adhesive layer of the substrate with an adhesive layer (hereinafter also referred to as the adhesive substrate) at a temperature lower than 260°C. ), and the conductor circuit is arranged on the surface of the F layer.

處理電路基板具有F層、設於F層表面之導體電路、以及與前述導體電路表面和F層之設有前述導體電路部分以外的表面相接的接著層(以下亦記載為接著層)。接著層為由接著性基板利用熱壓合而形成之層,具體而言是源自於後述之接著劑片或附接著劑層之覆蓋薄膜之接著劑層而來的層。 處理電路基板宜為:接著性基板為附接著劑層之覆蓋薄膜、且處理電路基板為附覆蓋薄膜之電路基板;或者,接著性基板為接著劑片、且處理電路基板為附接著層之電路基板。The processing circuit board has an F layer, a conductive circuit provided on the surface of the F layer, and an adhesive layer (hereinafter also referred to as an adhesive layer) in contact with the conductive circuit surface and the surface of the F layer other than the portion where the conductive circuit is provided. The adhesive layer is a layer formed by thermocompression bonding of an adhesive substrate, specifically, a layer derived from an adhesive layer of an adhesive sheet or a cover film with an adhesive layer to be described later. The processing circuit substrate is preferably: the adhesive substrate is a cover film with an adhesive layer attached, and the processing circuit substrate is a circuit substrate with a cover film; or, the adhesive substrate is an adhesive sheet, and the processing circuit substrate is a circuit substrate with an adhesive layer.

後者之處理電路基板中,可進一步具有與處理電路基板表面相接的覆蓋層。覆蓋層為保護導體電路之層,具體上可舉如由後述之附接著劑層之覆蓋薄膜所形成的覆蓋層。 處理電路基板亦可具有與F層之設有導體電路側的相反側之表面相接的耐熱性基材層。 處理電路基板可具有2層以上之F層,亦可具有2層以上之耐熱性基材層,亦可具有2層以上之覆蓋層。The latter processing circuit board may further have a cover layer in contact with the surface of the processing circuit board. The cover layer is a layer for protecting the conductor circuit, and specifically, a cover layer formed of a cover film with an adhesive layer to be described later is exemplified. The processing circuit board may have a heat-resistant base material layer in contact with the surface of the F layer opposite to the side where the conductor circuit is provided. The processing circuit board may have two or more F layers, may have two or more heat-resistant substrate layers, and may have two or more cover layers.

處理電路基板中可形成有貫穿孔、通路孔等。 處理電路基板之熱壓合面的剝離強度以5N/cm以上為佳、8N/cm以上較佳、10N/cm以上尤佳。剝離強度若在前述範圍之下限値以上,則F層與接著層之接著性即佳。剝離強度愈高愈佳,上限值並無限定。另,所謂熱壓合面,係F層及導體電路與接著層之界面。 耐熱性基材層為含耐熱性基材之層,可為單層結構,亦可為多層結構。Through holes, via holes, and the like may be formed in the processing circuit substrate. The peel strength of the thermocompression bonded surface of the processed circuit substrate is preferably 5 N/cm or higher, more preferably 8 N/cm or higher, and especially preferably 10 N/cm or higher. If the peel strength is above the lower limit value of the aforementioned range, then the adhesiveness between the F layer and the adhesive layer is good. The higher the peel strength, the better, and the upper limit is not limited. In addition, the so-called thermocompression bonding surface refers to the interface between the F layer and the conductor circuit and the bonding layer. The heat-resistant base material layer is a layer containing a heat-resistant base material, and may have a single-layer structure or a multi-layer structure.

耐熱性基材可舉如聚醯亞胺(芳香族聚醯亞胺等)、聚芳酯、聚碸、聚烯丙基碸(聚醚碸等)、芳香族聚醯胺、芳香族聚醚醯胺、聚苯硫醚、聚烯丙基醚酮、聚醯胺醯亞胺、液晶聚酯、纖維強化基材。 纖維強化基材為具有基質樹脂(環氧樹脂等熱硬化性樹脂之硬化物、耐熱性樹脂等)、與被埋設在基質樹脂中之強化纖維(玻璃纖維、碳纖維、芳香族聚醯胺纖維、聚苯并唑纖維、聚芳酯纖維等,可為織布亦可為不織布)的基材。 耐熱性基材層之厚度通常為5~150μm,且7.5~100μm為佳、12~75μm較佳。Examples of heat-resistant substrates include polyimide (aromatic polyimide, etc.), polyarylate, polyamide, polyallylamide (polyetheramide, etc.), aromatic polyamide, aromatic polyetheramide, polyphenylene sulfide, polyallyl ether ketone, polyamideimide, liquid crystal polyester, and fiber-reinforced substrates. The fiber-reinforced base material has a matrix resin (cured product of thermosetting resin such as epoxy resin, heat-resistant resin, etc.), and reinforcing fibers (glass fiber, carbon fiber, aramid fiber, polybenzoic acid, etc.) embedded in the matrix resin. Azole fibers, polyarylate fibers, etc., can be woven or non-woven fabrics). The thickness of the heat-resistant substrate layer is usually 5-150 μm, preferably 7.5-100 μm, more preferably 12-75 μm.

本發明之導體電路可舉如:將具有金屬箔、F層與視需要之耐熱性基材層的覆金屬積層板利用蝕刻等對金屬箔進行加工而形成了指定之電路圖案的導體電路;將前述覆金屬積層板之金屬箔利用後述之SAP法或MSAP法進行加工而形成了指定之電路圖案的電鍍銅導體電路等。 金屬箔之材質可舉如銅、銅合金、不銹鋼、鎳、鎳合金(亦含42合金)、鋁、鋁合金等。一般用於電子機器的電路基板多採用軋延銅箔、電解銅箔等銅箔,本發明之金屬箔亦以銅箔為宜。The conductor circuit of the present invention can be, for example, a conductor circuit in which a metal-clad laminate having a metal foil, an F layer, and an optional heat-resistant substrate layer is processed by etching the metal foil to form a specified circuit pattern; an electroplated copper conductor circuit in which a specified circuit pattern is formed by processing the metal foil of the metal-clad laminate using the SAP method or MSAP method described later. The material of the metal foil can be, for example, copper, copper alloy, stainless steel, nickel, nickel alloy (including 42 alloy), aluminum, aluminum alloy, etc. Copper foils such as rolled copper foils and electrolytic copper foils are generally used for circuit substrates used in electronic equipment. Copper foils are also suitable for the metal foils of the present invention.

亦可於金屬箔的表面形成防鏽層(鉻酸鹽等之氧化物皮膜等)、耐熱層等。亦可對金屬箔的表面施以用於提高對接著層之接著性的表面處理(偶合劑處理等)。 金屬箔之表面十點平均粗度(RzJIS )以0.2~2.0μm為佳,0.3~1.5μm較佳。此情況下,易在與接著層之接著力及電傳輸損耗之降低之間取得平衡。 金屬箔之厚度宜為5~75μm。 導體電路宜利用半加成法(SAP法)或改良半加成法(MSAP法)加工前述覆金屬積層板而形成。It is also possible to form an anti-rust layer (an oxide film such as chromate, etc.), a heat-resistant layer, etc. on the surface of the metal foil. Surface treatment (coupling agent treatment etc.) for improving the adhesiveness to an adhesive layer can also be given to the surface of metal foil. The ten-point average roughness (Rz JIS ) of the surface of the metal foil is preferably 0.2-2.0 μm, more preferably 0.3-1.5 μm. In this case, it is easy to strike a balance between the reduction of the adhesive force with the adhesive layer and the loss of electrical transmission. The thickness of the metal foil is preferably 5-75 μm. The conductive circuit is preferably formed by processing the aforementioned metal-clad laminate by the semi-additive method (SAP method) or the modified semi-additive method (MSAP method).

SAP法之第1形態可舉如具有下述步驟之方法。 藉由蝕刻將覆金屬積層板之金屬箔全部去除之步驟、 設置貫穿孔及通路孔之任一者或兩者之步驟、 對全表面(含貫穿孔及通路孔)進行除渣處理之步驟、 對全表面(含貫穿孔及通路孔)設置無電鍍層之步驟、 在無電鍍層表面的非電路區域設置電鍍保護膜之步驟、 於設置電鍍保護膜後利用電鍍來形成導體電路之步驟、 去除電鍍保護膜之步驟、 將去除電鍍保護膜後暴露之無電鍍層利用快速蝕刻去除之步驟。The first aspect of the SAP method includes a method having the following steps. A step of completely removing the metal foil of the metal-clad laminate by etching, The step of providing either or both of the through hole and the via hole, Steps for removing slag on the entire surface (including through holes and via holes), Steps for providing electroless plating on the entire surface (including through holes and via holes), The step of providing an electroplating protective film on the non-circuit area of the electroless plating surface, The step of forming a conductor circuit by electroplating after the electroplating protective film is installed, The steps of removing the electroplating protective film, The electroless plating layer exposed after removing the electroplating protective film is removed by rapid etching.

SAP法之第2形態可舉如具有下述步驟之方法。 於覆金屬積層板設置貫穿孔及通路孔之任一者或兩者之步驟、 對全表面(含貫穿孔及通路孔)進行除渣處理之步驟、 藉由蝕刻將金屬箔全部去除之步驟、 對全表面(含貫穿孔及通路孔)設置無電鍍層之步驟、 在無電鍍層表面的非電路區域設置電鍍保護膜之步驟、 於設置電鍍保護膜後利用電鍍來形成導體電路之步驟、 去除電鍍保護膜之步驟、 將去除電鍍保護膜後暴露之無電鍍層利用快速蝕刻去除之步驟。The second aspect of the SAP method is a method having the following steps. The step of providing either or both of the through hole and the via hole in the metal-clad laminate, Steps for removing slag on the entire surface (including through holes and via holes), The step of completely removing the metal foil by etching, Steps for providing electroless plating on the entire surface (including through holes and via holes), The step of providing an electroplating protective film on the non-circuit area of the electroless plating surface, The step of forming a conductor circuit by electroplating after the electroplating protective film is installed, The steps of removing the electroplating protective film, The electroless plating layer exposed after removing the electroplating protective film is removed by rapid etching.

MSAP法之第1形態可舉如具有下述步驟之方法。 於覆金屬積層板設置貫穿孔及通路孔之任一者或兩者之步驟、 對全表面(含貫穿孔及通路孔)進行除渣處理之步驟、 對全表面(含貫穿孔及通路孔)設置無電鍍層之步驟、 在無電鍍層表面的非電路區域設置電鍍保護膜之步驟、 於設置電鍍保護膜後利用電鍍來形成導體電路之步驟、 去除電鍍保護膜之步驟、 將去除電鍍保護膜後暴露之無電鍍層及金屬箔利用快速蝕刻去除之步驟。The first aspect of the MSAP method includes a method having the following steps. The step of providing either or both of the through hole and the via hole in the metal-clad laminate, Steps for removing slag on the entire surface (including through holes and via holes), Steps for providing electroless plating on the entire surface (including through holes and via holes), The step of providing an electroplating protective film on the non-circuit area of the electroless plating surface, The step of forming a conductor circuit by electroplating after the electroplating protective film is installed, The steps of removing the electroplating protective film, The step of removing the electroless plating layer and metal foil exposed after removing the electroplating protective film by rapid etching.

MSAP法之第2形態可舉如具有下述步驟之方法。 在覆金屬積層板之金屬箔表面的非電路區域設置電鍍保護膜之步驟、 於設置電鍍保護膜後利用電鍍來形成導體電路之步驟、 去除電鍍保護膜之步驟、 將去除電鍍保護膜後暴露之金屬箔利用快速蝕刻等去除之步驟。The second aspect of the MSAP method includes a method having the following steps. The step of arranging an electroplating protective film on the non-circuit area of the metal foil surface of the metal-clad laminate, The step of forming a conductor circuit by electroplating after the electroplating protective film is installed, The steps of removing the electroplating protective film, The step of removing the metal foil exposed after removing the electroplating protective film by rapid etching or the like.

本發明之接著性基板宜為接著劑片或附接著劑層之覆蓋薄膜。又,接著性基板之接著劑層可為熱塑性亦可為熱硬化性,以熱硬化性為宜。即,接著性基板宜為具有熱硬化性接著劑層之基板。此情形時,處理電路基板的接著層中含有該等接著成分之硬化物(熱硬化性接著劑之硬化物)。The adhesive substrate of the present invention is preferably an adhesive sheet or a cover film for attaching an adhesive layer. Also, the adhesive layer of the adhesive substrate can be thermoplastic or thermosetting, and thermosetting is preferable. That is, the adhesive substrate is preferably a substrate having a thermosetting adhesive layer. In this case, the adhesive layer of the processed circuit board contains cured products of these adhesive components (cured products of thermosetting adhesives).

接著劑片係片狀的接著劑,可為僅由接著劑構成之片材,亦可為於耐熱性樹脂薄膜之雙面設置接著劑層而成之片材。接著劑片的接著劑為熱硬化性接著劑時,熱硬化性接著劑宜為半硬化狀態的半硬化物。 附接著劑層之覆蓋薄膜具有覆蓋層(覆蓋薄膜)、及設於覆蓋層之單面的接著劑層。附接著劑層之覆蓋薄膜之接著劑層的接著劑為熱硬化性接著劑時,熱硬化性接著劑宜為半硬化狀態之半硬化物。The adhesive sheet is a sheet-like adhesive, and may be a sheet consisting only of an adhesive, or may be a sheet in which adhesive layers are provided on both sides of a heat-resistant resin film. When the adhesive of the adhesive tablet is a thermosetting adhesive, the thermosetting adhesive is preferably a semi-cured product in a semi-cured state. The cover film with an adhesive layer attached has a cover layer (cover film), and an adhesive layer provided on one side of the cover layer. When the adhesive of the adhesive layer of the cover film to which the adhesive layer is attached is a thermosetting adhesive, the thermosetting adhesive is preferably a semi-cured product in a semi-cured state.

覆蓋層的材質可舉如耐熱性樹脂、F聚合物等。 覆蓋層的厚度宜為12~100μm。接著性基板之接著劑層的厚度宜為5~50μm。熱硬化性接著劑層宜含有熱硬化性樹脂。 熱硬化性樹脂可舉如環氧樹脂、氰酸酯樹脂、多官能性馬來醯亞胺樹脂、不飽和聚伸苯基醚樹脂、苯并 樹脂、乙烯酯樹脂等。熱硬化性樹脂亦可併用2種以上。The material of the covering layer may be, for example, heat-resistant resin, F polymer, or the like. The thickness of the covering layer is preferably 12-100 μm. The thickness of the adhesive layer of the adhesive substrate is preferably 5-50 μm. The thermosetting adhesive layer preferably contains a thermosetting resin. Thermosetting resins include epoxy resins, cyanate resins, polyfunctional maleimide resins, unsaturated polyphenylene ether resins, benzo resin, vinyl ester resin, etc. Two or more types of thermosetting resins may be used in combination.

熱硬化性接著劑層通常含有硬化劑與硬化促進劑。 硬化劑可因應熱硬化性樹脂的種類適當選擇。例如,熱硬化性樹脂為環氧樹脂時的硬化劑可舉如胺系硬化劑、酚系硬化劑、酸酐系硬化劑、二氰二胺、低分子量聚伸苯基醚化合物。硬化劑亦可併用2種以上。 硬化促進劑可舉如咪唑、3級胺、有機膦化合物、金屬皂等。硬化促進劑亦可併用2種以上。A thermosetting adhesive layer usually contains a curing agent and a curing accelerator. A hardening agent can be selected suitably according to the kind of thermosetting resin. For example, examples of the curing agent when the thermosetting resin is an epoxy resin include amine-based curing agents, phenol-based curing agents, acid anhydride-based curing agents, dicyandiamine, and low-molecular-weight polyphenylene ether compounds. Two or more curing agents may be used in combination. Examples of hardening accelerators include imidazoles, tertiary amines, organic phosphine compounds, and metal soaps. The hardening accelerator may use 2 or more types together.

熱硬化性接著劑層亦可進一步含有填料、熱塑性樹脂、其他添加劑。 填料可舉如氧化矽、金屬氧化物(氧化鋁、氧化鎂、氧化鈦等)、金屬氫氧化物(氫氧化鋁、氫氧化鎂等)、硫酸鋇、碳酸鈣、碳酸鎂、氮化硼、硼酸鋁、鈦酸鋇、鈦酸鍶、鈦酸鈣、鈦酸鎂、鈦酸鉍、滑石、黏土、雲母粉、硬化樹脂粉、橡膠粒子(丙烯酸橡膠粒子、核殼型橡膠粒子、交聯丙烯腈丁二烯橡膠粒子、交聯苯乙烯丁二烯橡膠粒子等)。填料亦可併用2種以上。The thermosetting adhesive layer may further contain fillers, thermoplastic resins, and other additives. 填料可舉如氧化矽、金屬氧化物(氧化鋁、氧化鎂、氧化鈦等)、金屬氫氧化物(氫氧化鋁、氫氧化鎂等)、硫酸鋇、碳酸鈣、碳酸鎂、氮化硼、硼酸鋁、鈦酸鋇、鈦酸鍶、鈦酸鈣、鈦酸鎂、鈦酸鉍、滑石、黏土、雲母粉、硬化樹脂粉、橡膠粒子(丙烯酸橡膠粒子、核殼型橡膠粒子、交聯丙烯腈丁二烯橡膠粒子、交聯苯乙烯丁二烯橡膠粒子等)。 You may use 2 or more types of filler together.

熱塑性樹脂可舉如丙烯酸樹脂、苯氧基樹脂、聚乙烯縮醛樹脂、聚伸苯基醚樹脂、碳二醯亞胺樹脂。 其他添加劑可舉如阻燃劑、阻燃助劑、調平劑、著色劑等。 本發明中的熱硬化性接著劑層,宜為含有橡膠改質環氧樹脂及硬化劑的熱硬化性接著劑層。Examples of thermoplastic resins include acrylic resins, phenoxy resins, polyvinyl acetal resins, polyphenylene ether resins, and carbodiimide resins. Other additives include flame retardants, flame retardant aids, leveling agents, coloring agents, and the like. The thermosetting adhesive layer in the present invention is preferably a thermosetting adhesive layer containing a rubber-modified epoxy resin and a curing agent.

橡膠改質環氧樹脂是具有2個以上環氧基並於樹脂結構中形成有橡膠骨架的環氧樹脂。作為形成橡膠骨架的橡膠可舉如聚丁二烯、丙烯腈丁二烯橡膠、苯乙烯系彈性體、胺甲酸乙酯橡膠、丙烯酸橡膠。丙烯腈丁二烯橡膠可具有羧基末端。苯乙烯系彈性體可舉如苯乙烯-丁二烯嵌段共聚物、苯乙烯-乙烯丙烯嵌段共聚物、苯乙烯-丁二烯-苯乙烯嵌段共聚物、苯乙烯-異戊二烯-苯乙烯嵌段共聚物、苯乙烯-乙烯丁烯-苯乙烯嵌段共聚物、苯乙烯-乙烯丙烯-苯乙烯嵌段共聚物。胺甲酸乙酯橡膠可舉如聚碳酸酯二元醇與異氰酸酯的共聚物。丙烯酸橡膠可舉如(甲基)丙烯酸環氧丙酯、(甲基)丙烯酸烷酯及芳香族乙烯基化合物的共聚物。The rubber-modified epoxy resin is an epoxy resin having two or more epoxy groups and forming a rubber skeleton in the resin structure. Examples of the rubber forming the rubber skeleton include polybutadiene, acrylonitrile butadiene rubber, styrene-based elastomer, urethane rubber, and acrylic rubber. The acrylonitrile butadiene rubber may have a carboxyl terminal. Examples of styrene-based elastomers include styrene-butadiene block copolymers, styrene-ethylene propylene block copolymers, styrene-butadiene-styrene block copolymers, styrene-isoprene-styrene block copolymers, styrene-ethylene butylene-styrene block copolymers, and styrene-ethylene propylene-styrene block copolymers. Examples of urethane rubber include copolymers of polycarbonate diol and isocyanate. Examples of the acrylic rubber include copolymers of glycidyl (meth)acrylate, alkyl (meth)acrylate, and aromatic vinyl compounds.

橡膠改質環氧樹脂的環氧當量宜為200~350g/eq。 橡膠改質環氧樹脂宜為環氧丙基醚型環氧樹脂、環氧丙基酯型環氧樹脂、環氧丙基胺型環氧樹脂或氧化型環氧樹脂。 環氧丙基醚型環氧樹脂宜為雙酚A型環氧樹脂、雙酚F型環氧樹脂、酚醛型環氧樹脂或醇型環氧樹脂。The epoxy equivalent of rubber modified epoxy resin should be 200~350g/eq. The rubber modified epoxy resin is preferably a glycidyl ether type epoxy resin, a glycidyl ester type epoxy resin, a glycidylamine type epoxy resin or an oxidized epoxy resin. The glycidyl ether type epoxy resin is preferably bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolac type epoxy resin or alcohol type epoxy resin.

環氧丙基酯型環氧樹脂宜為氫酞酸型環氧樹脂或二體酸型環氧樹脂。 硬化劑宜為二氰二胺、芳香族二胺、脂肪族二胺、苯酚酚醛清漆樹脂、萘酚酚醛清漆樹脂、胺基三酚醛清漆樹脂、或酸酐。從耐熱性的觀點來看,係以胺基三酚醛清漆樹脂為宜。The glycidyl ester type epoxy resin is preferably hydrophthalic acid type epoxy resin or dimer acid type epoxy resin. The hardener should be dicyandiamine, aromatic diamine, aliphatic diamine, phenol novolac resin, naphthol novolak resin, amino three Novolac resin, or acid anhydride. From the point of view of heat resistance, the system is based on the amino three Novolac resins are preferred.

本發明中的F層是含有四氟乙烯系聚合物(F聚合物)之層,該聚合物具有以四氟乙烯(以下亦表記為TFE)為主之單元(以下亦表記為TFE單元)。 F層亦可含有無機填料、F聚合物以外之樹脂、添加劑等。F層中F聚合物的比率係90質量%以上較佳,其上限値為100質量%。The F layer in the present invention is a layer containing a tetrafluoroethylene polymer (F polymer) having units (hereinafter also referred to as TFE units) mainly composed of tetrafluoroethylene (hereinafter also referred to as TFE). The F layer may also contain inorganic fillers, resins other than the F polymer, additives, and the like. The ratio of the F polymer in the F layer is preferably 90% by mass or more, and the upper limit thereof is 100% by mass.

F層的厚度通常為1~1000μm,並以5~500μm為佳、10~500μm較佳、10~300μm更佳、10~200μm尤佳。 F聚合物宜為可熔融成形之F聚合物。前述F聚合物之熔融流速以0.1~1000g/10分為佳、0.5~100g/10分較佳、5~20g/10分尤佳。The thickness of the F layer is usually 1-1000 μm, preferably 5-500 μm, more preferably 10-500 μm, more preferably 10-300 μm, and especially preferably 10-200 μm. The F polymer is preferably a melt formable F polymer. The melt flow rate of the aforementioned polymer F is preferably 0.1-1000 g/10 min, more preferably 0.5-100 g/10 min, and especially preferably 5-20 g/10 min.

F聚合物的熔點係260℃以上為佳、260~325℃較佳、280~320℃更佳、280~315℃尤佳。此時,F層會有優良的耐熱性,並且易於抑止在形成導體電路等時的熱壓合中的位置錯位。又,可使用通用的裝置。 F聚合物的氟含量宜為70~78質量%。另,氟含量係氟原子之合計質量相對於F聚合物總質量的比率,由19 F-NMR求得。The melting point of polymer F is preferably above 260°C, more preferably 260~325°C, more preferably 280~320°C, and especially preferably 280~315°C. In this case, the F layer has excellent heat resistance, and it is easy to suppress dislocation during thermocompression bonding when forming a conductor circuit or the like. Also, general-purpose devices can be used. The fluorine content of the F polymer is preferably 70 to 78% by mass. In addition, the fluorine content is the ratio of the total mass of fluorine atoms to the total mass of the F polymer, and is determined by 19 F-NMR.

F聚合物可具有選自於由含羰基之基團、羥基、環氧基、醯胺基、胺基及異氰酸酯基所構成群組中之至少1種官能基(以下亦表記為官能基),亦可不具官能基。從F層與其他層(接著層、導體電路、耐熱性基材層等,以下相同)之接著性更加優異的觀點來看,以具官能基之F聚合物為佳。 具官能基之F聚合物,可舉如含有以具官能基之單體為主之單元或具官能基之末端基的F聚合物。具體上可舉如具官能基之TFE與PAVE的共聚物、具官能基之TFE與HFP的共聚物、具官能基之乙烯與TFE的共聚物等。The F polymer may have at least one functional group (hereinafter also referred to as a functional group) selected from the group consisting of carbonyl-containing groups, hydroxyl groups, epoxy groups, amide groups, amine groups, and isocyanate groups, or may not have functional groups. From the viewpoint of better adhesion between the F layer and other layers (adhesive layer, conductive circuit, heat-resistant substrate layer, etc., hereinafter the same), the F polymer with functional groups is preferable. The F polymer with a functional group may be, for example, a F polymer containing a unit mainly composed of a monomer with a functional group or an end group with a functional group. Specifically, examples include copolymers of TFE with functional groups and PAVE, copolymers of TFE with functional groups and HFP, copolymers of ethylene with functional groups and TFE, and the like.

F聚合物中的官能基的種類可為2種以上。 從F層與其他層之接著性更加優異的觀點來看,官能基宜為含羰基之基團。含羰基之基團可舉酮基、碳酸酯基、羧基、鹵代甲醯基、烷氧羰基、酸酐殘基。另,「酸酐殘基」係指以-C(=O)-O-C(=O)-表示之基。 酮基宜含在碳數2~8之伸烷基中之碳原子間。另,前述伸烷基之碳數係不含酮基之碳原子之碳數。 鹵代甲醯基可舉-C(=O)F、-C(=O)Cl、-C(=O)Br、-C(=O)I,且以-C(=O)F為佳。There may be two or more types of functional groups in the F polymer. From the viewpoint of better adhesion between the F layer and other layers, the functional group is preferably a carbonyl group-containing group. Examples of carbonyl-containing groups include ketone groups, carbonate groups, carboxyl groups, haloformyl groups, alkoxycarbonyl groups, and acid anhydride residues. In addition, the "acid anhydride residue" refers to a group represented by -C(=O)-O-C(=O)-. The keto group is preferably contained between the carbon atoms in the alkylene group having 2 to 8 carbons. In addition, the carbon number of the above-mentioned alkylene group is the carbon number of the carbon atom not containing the ketone group. Examples of haloformyl include -C(=O)F, -C(=O)Cl, -C(=O)Br, -C(=O)I, and -C(=O)F is preferred.

烷氧羰基之烷氧基以碳數1~8之烷氧基為佳,且甲氧基或乙氧基尤佳。 含羰基之基團宜為酸酐殘基或羧基。 F聚合物中的官能基含量宜相對於F聚合物之主鏈碳數1×106 個為10~60000個,300~5000個尤佳。此時,F層與其他層之接著性優異,尤其是低溫接著性。 接著性官能基的含量可利用日本特開2007-314720號公報中所記載的方法來測定。The alkoxy group of the alkoxycarbonyl group is preferably an alkoxy group having 1 to 8 carbon atoms, and particularly preferably a methoxy group or an ethoxy group. The carbonyl-containing group is preferably an anhydride residue or a carboxyl group. The content of functional groups in polymer F is preferably 10-60000, more preferably 300-5000, relative to the number of carbons in the main chain of polymer F which is 1×10 6 . In this case, the adhesion between the F layer and other layers is excellent, especially low-temperature adhesion. The content of the adhesive functional group can be measured by the method described in Unexamined-Japanese-Patent No. 2007-314720.

F聚合物中的官能基,從F層與其他層之接著性的觀點來看,宜作為F聚合物主鏈之末端基或F聚合物主鏈之側基存在,且作為F聚合物主鏈之側基存在尤佳。此等F聚合物可利用下述方法製造:使TFE與具官能基之單體共聚合的方法、或是使用可帶來官能基之鏈轉移劑或聚合引發劑使TFE聚合的方法。The functional group in the F polymer is preferably present as a terminal group of the F polymer main chain or a side group of the F polymer main chain, and is particularly preferably present as a side group of the F polymer main chain from the viewpoint of adhesion between the F layer and other layers. These F polymers can be produced by a method of copolymerizing TFE with a monomer having a functional group, or a method of polymerizing TFE using a chain transfer agent or a polymerization initiator capable of imparting a functional group.

具官能基之單體以具有含羰基之基團、羥基、環氧基、醯胺基、胺基或異氰酸酯基的單體為佳,並以具有酸酐殘基或羧基之單體尤佳。所述單體可例示為馬來酸、伊康酸、檸康酸、十一碳烯酸、伊康酸酐(以下亦表記為「IAH」)、檸康酸酐(以下亦表記為CAH)、5-降莰烯-2,3-二羧酸酐(以下亦表記為NAH)、馬來酸酐、羥烷基乙烯醚、環氧烷基乙烯醚。 可帶來官能基之鏈轉移劑可例示為乙酸、乙酸酐、乙酸甲酯、乙二醇、丙二醇等。The monomer with functional groups is preferably a monomer having a carbonyl group, a hydroxyl group, an epoxy group, an amide group, an amine group or an isocyanate group, and is especially preferably a monomer having an acid anhydride residue or a carboxyl group. Examples of such monomers include maleic acid, itaconic acid, citraconic acid, undecylenic acid, itaconic anhydride (hereinafter also referred to as "IAH"), citraconic anhydride (hereinafter also referred to as CAH), 5-norbornene-2,3-dicarboxylic anhydride (hereinafter also referred to as NAH), maleic anhydride, hydroxyalkyl vinyl ether, and epoxyalkyl vinyl ether. The chain transfer agent that can bring a functional group can be exemplified by acetic acid, acetic anhydride, methyl acetate, ethylene glycol, propylene glycol, and the like.

可帶來官能基之聚合引發劑可例示為過氧二碳酸二-正丙酯、過氧碳酸二異丙酯、三級丁基過氧基異丙基碳酸酯、雙(4-三級丁基環己基)過氧二碳酸酯、過氧二碳酸二-2-乙基己酯等。 官能基作為主鏈之側基而存在的F聚合物,從其接著性的觀點來看可例示為具有下述單元的F聚合物:TFE單元、以具酸酐殘基之單體為主之單元、及以TFE以外之氟烯烴為主之單元。Polymerization initiators that can bring functional groups can be exemplified by di-n-propyl peroxydicarbonate, diisopropyl peroxydicarbonate, tertiary butylperoxyisopropyl carbonate, bis(4-tertiary butylcyclohexyl)peroxydicarbonate, di-2-ethylhexyl peroxydicarbonate, and the like. The F polymer in which the functional group exists as a side group of the main chain can be exemplified from the viewpoint of its adhesiveness as an F polymer having the following units: a TFE unit, a unit mainly composed of a monomer having an acid anhydride residue, and a unit mainly composed of a fluoroolefin other than TFE.

前述單體以IAH、CAH、NAH或馬來酸酐為佳,IAH、CAH或NAH較佳,IAH或NAH尤佳。此時,F層與其他層之接著性優異。 另,前述F聚合物中,有時會含有酸酐殘基之一部分經水解所形成的1,2-二羧酸殘基。此情形時,1,2-二羧酸單元的含量係包含在以具酸酐殘基之單體為主之單元的含量內。 TFE以外的氟烯烴可舉如氟乙烯、二氟亞乙烯、三氟乙烯、六氟丙烯(以下亦表記為HFP)、六氟異丁烯、全氟(烷基乙烯醚)(以下亦表記為PAVE)、具官能基之氟乙烯醚、氟(二乙烯醚)、多氟(烷基乙烯)(以下亦表記為FAE)、具環結構之氟單體,而從F聚合物之成形性、F層之耐彎曲性等優異的觀點來看係以HFP、PAVE、FAE為宜。The aforementioned monomers are preferably IAH, CAH, NAH or maleic anhydride, more preferably IAH, CAH or NAH, especially preferably IAH or NAH. In this case, the adhesion between the F layer and other layers is excellent. In addition, the aforementioned F polymer may contain a 1,2-dicarboxylic acid residue formed by hydrolysis of a part of the acid anhydride residue. In this case, the content of the 1,2-dicarboxylic acid unit is included in the content of the unit mainly composed of a monomer having an acid anhydride residue. Fluoroolefins other than TFE include fluoroethylene, difluoroethylene, trifluoroethylene, hexafluoropropylene (hereinafter also referred to as HFP), hexafluoroisobutylene, perfluoro(alkyl vinyl ether) (hereinafter also referred to as PAVE), functional group-containing fluorovinyl ether, fluorine (divinyl ether), polyfluoro(alkylethylene) (hereinafter also referred to as FAE), and fluoromonomers with a ring structure. VE and FAE are suitable.

PAVE可例示為CF2 =CFOCF3 、CF2 =CFOCF2 CF3 、CF2 =CFOCF2 CF2 CF3 (以下亦表記為PPVE)、CF2 =CFOCF2 CF2 CF2 CF3 、CF2 =CFO(CF2 )6 F。 FAE可例示為CH2 =CF(CF2 )2 F、CH2 =CF(CF2 )4 F、CH2 =CF(CF2 )6 F、CH2 =CF(CF2 )2 H、CH2 =CF(CF2 )4 H、CH2 =CF(CF2 )6 H、CH2 =CH(CF2 )2 F(以下亦表記為PFEE)、CH2 =CH(CF2 )4 F(以下亦表記為PFBE)、CH2 =CH(CF2 )6 F、CH2 =CH(CF2 )2 H、CH2 =CH(CF2 )4 H、CH2 =CH(CF2 )6 H。PAVE can be exemplified by CF 2 =CFOCF 3 , CF 2 =CFOCF 2 CF 3 , CF 2 =CFOCF 2 CF 2 CF 3 (hereinafter also referred to as PPVE), CF 2 =CFOCF 2 CF 2 CF 2 CF 3 , and CF 2 =CFO(CF 2 ) 6 F. FAE can be exemplified by CH 2 =CF(CF 2 ) 2 F, CH 2 =CF(CF 2 ) 4 F, CH 2 =CF(CF 2 ) 6 F, CH 2 =CF(CF 2 ) 2 H, CH 2 =CF(CF 2 ) 4 H , CH 2 =CF(CF 2 ) 6 H, CH 2 =CH(CF 2 ) 2 F (also shown below PFEE), CH 2 =CH(CF 2 ) 4 F ( hereinafter also referred to as PFBE), CH 2 =CH(CF 2 ) 6 F, CH 2 =CH(CF 2 ) 2 H, CH 2 =CH(CF 2 ) 4 H, CH 2 = CH ( CF 2 ) 6 H.

具環結構之氟單體可例示為全氟(2,2-二甲基-1,3-二呃)、2,2,4-三氟-5-三氟甲氧基-1,3-二呃、全氟(2-亞甲基-4-甲基-1,3-二氧環戊烷)。 具官能基之氟乙烯醚可例示CF2 =CFOCF2 CF(CF3 )OCF2 CF2 SO2 F、CF2 =CFOCF2 CF2 SO2 F、CF2 =CFOCF2 CF(CF3 )OCF2 CF2 SO3 H、CF2 =CFOCF2 CF2 SO3 H、CF2 =CFO(CF2 )3 COOCH3 、CF2 =CFO(CF2 )3 COOH。 氟(二乙烯醚)可例示CF2 =CFCF2 CF2 OCF=CF2 、CF2 =CFCF2 OCF=CF2Fluorine monomers with a ring structure can be exemplified by perfluoro(2,2-dimethyl-1,3-di uh), 2,2,4-trifluoro-5-trifluoromethoxy-1,3-di Er, perfluoro(2-methylene-4-methyl-1,3-dioxolane). Fluorovinyl ethers with functional groups can be exemplified by CF 2 =CFOCF 2 CF(CF 3 )OCF 2 CF 2 SO 2 F, CF 2 =CFOCF 2 CF 2 SO 2 F, CF 2 =CFOCF 2 CF(CF 3 )OCF 2 CF 2 SO 3 H, CF 2 =CFOCF 2 CF 2 SO 3 H, CF 2 =C FO (CF 2 ) 3 COOCH 3 , CF 2 = CFO(CF 2 ) 3 COOH. Examples of fluorine (divinyl ether) include CF 2 =CFCF 2 CF 2 OCF=CF 2 and CF 2 =CFCF 2 OCF=CF 2 .

F聚合物亦可進一步具有以前述單體以外之非氟單體為主之單元。 非氟單體可舉如乙烯、丙烯、1-丁烯、乙烯酯(乙酸乙烯酯等)。 F聚合物之適宜具體例可例示為:TFE、NAH與PPVE之共聚物;TFE、IAH與PPVE之共聚物;TFE、CAH與PPVE之共聚物;TFE、IAH與HFP之共聚物;TFE、CAH與HFP之共聚物;TFE、IAH、PFBE與乙烯之共聚物;TFE、CAH、PFBE與乙烯之共聚物;TFE、IAH、PFEE與乙烯之共聚物;TFE、CAH、PFEE與乙烯之共聚物;TFE、IAH、HFP、PFBE與乙烯之共聚物。The F polymer may further have units mainly composed of non-fluorine monomers other than the aforementioned monomers. Examples of non-fluorine monomers include ethylene, propylene, 1-butene, and vinyl esters (vinyl acetate, etc.). Suitable specific examples of the F polymer can be illustrated as: a copolymer of TFE, NAH and PPVE; a copolymer of TFE, IAH and PPVE; a copolymer of TFE, CAH and PPVE; a copolymer of TFE, IAH and HFP; a copolymer of TFE, CAH and HFP; a copolymer of TFE, IAH, PFBE and ethylene; Copolymer of TFE, IAH, HFP, PFBE and ethylene.

F聚合物在構成聚合物之總單元內,TFE單元宜佔50~99.89莫耳%(較佳為50~98.9莫耳%),以具官能基之單體為主之單元宜佔0.01~5莫耳%(較佳為0.1~2莫耳%),以HFP、PAVE或FAE為主之單元宜佔0.1~49.99莫耳%(較佳為1~49.9莫耳%)。 此時,F層之耐熱性、耐藥品性及高溫彈性模數、F層及其他層之接著性、以及F聚合物之成形性及耐撓曲性優異。In the total units of the F polymer, the TFE unit preferably accounts for 50-99.89 mol% (preferably 50-98.9 mol%), the unit mainly composed of functional monomers preferably accounts for 0.01-5 mol% (preferably 0.1-2 mol%), and the unit mainly composed of HFP, PAVE or FAE preferably accounts for 0.1-49.99 mol% (preferably 1-49.9 mol%). In this case, the heat resistance, chemical resistance and high temperature elastic modulus of the F layer, the adhesiveness between the F layer and other layers, and the moldability and flex resistance of the F polymer are excellent.

當F聚合物含有TFE單元、以具官能基之單體為主之單元、以HFP、PAVE或FAE為主之單元、及以乙烯為主之單元時,在構成聚合物之總單元內,TFE單元宜佔25~80莫耳%(較佳為45~63莫耳%),以具官能基之單體為主之單元宜佔0.01~5莫耳%(較佳為0.05~1莫耳%),以HFP、PAVE或FAE為主之單元宜佔0.2~20莫耳%(較佳為0.5~15莫耳%),以乙烯為主之單元宜佔20~75莫耳%(較佳為37~55莫耳%)。 此時,F層之耐藥品性及耐撓曲性、F層與接著層、導體電路、耐熱性基材層等之接著性、以及F聚合物之成形性會更加優異。When the F polymer contains TFE units, units mainly based on monomers with functional groups, units mainly based on HFP, PAVE or FAE, and units mainly based on ethylene, in the total units constituting the polymer, TFE units should account for 25-80 mole % (preferably 45-63 mole %), and units mainly based on monomers with functional groups should account for 0.01-5 mole % (preferably 0.05-1 mole %), mainly HFP, PAVE or FAE The unit should account for 0.2-20 mol% (preferably 0.5-15 mol%), and the unit mainly composed of ethylene should account for 20-75 mol% (preferably 37-55 mol%). In this case, the chemical resistance and flex resistance of the F layer, the adhesion between the F layer and the adhesive layer, the conductive circuit, the heat-resistant base material layer, and the formability of the F polymer will be more excellent.

不具官能基之氟樹脂可舉如TFE與PAVE之共聚物、TFE與HFP之共聚物、乙烯與TFE之共聚物、二氟亞乙烯之均聚物、三氟氯乙烯之均聚物、乙烯與三氟氯乙烯之共聚物等。 本發明之製造方法中,係將具有F層與導體電路之電路基板的導體電路側表面施行電漿處理,且該導體電路係設於F層表面。 電漿處理可舉如大氣壓電漿處理、真空電漿處理等,並以真空電漿處理為佳。Examples of fluororesins without functional groups include copolymers of TFE and PAVE, copolymers of TFE and HFP, copolymers of ethylene and TFE, homopolymers of vinylidene fluoride, homopolymers of chlorotrifluoroethylene, and copolymers of ethylene and chlorotrifluoroethylene. In the manufacturing method of the present invention, the conductive circuit side surface of the circuit substrate having the F layer and the conductive circuit is subjected to plasma treatment, and the conductive circuit is provided on the surface of the F layer. Plasma treatment may include atmospheric pressure plasma treatment, vacuum plasma treatment, etc., and vacuum plasma treatment is preferred.

真空電漿處理係利用減壓容器內之輝光放電進行之電漿處理,其施加電壓比電暈放電低而可降低消費電力。又,因為是在低壓下的處理,所以F聚合物表面的氧化劣化少,處理所致污染物質(屬F聚合物之分解物的低分子量體等)的產生少,故可抑止WBL(Weak Boundary Layer)的發生,並可進一步提升F層與接著層的剝離強度。 處理氣體可舉如氦氣、氖氣、氬氣、氮氣、氧氣、二氧化碳氣體、甲烷氣體、四氟化碳氣體、氫氣等。處理氣體可使用單一氣體,亦可使用混合氣體。從形成具有適宜之濕潤張力的電漿處理面的觀點來看,處理氣體宜為氬氣、二氧化碳氣體、氮氣與氫氣的混合氣體、氬氣與氫氣的混合氣體。Vacuum plasma treatment is a plasma treatment using glow discharge in a decompression vessel. The applied voltage is lower than that of corona discharge, which can reduce power consumption. In addition, because of the treatment under low pressure, there is less oxidative degradation on the surface of the F polymer, and the generation of pollutants (low-molecular-weight substances that are decomposition products of the F polymer, etc.) caused by the treatment is less, so the occurrence of WBL (Weak Boundary Layer) can be suppressed, and the peel strength between the F layer and the adhesive layer can be further improved. Examples of the processing gas include helium gas, neon gas, argon gas, nitrogen gas, oxygen gas, carbon dioxide gas, methane gas, carbon tetrafluoride gas, hydrogen gas, and the like. A single gas or a mixed gas can be used for the processing gas. From the viewpoint of forming a plasma-treated surface with an appropriate wetting tension, the processing gas is preferably argon, carbon dioxide gas, a mixed gas of nitrogen and hydrogen, or a mixed gas of argon and hydrogen.

氣體壓力以0.1~1330Pa為佳、1~266Pa較佳。 電漿處理時的處理氣體與處理壓力的適宜組合可舉如處理氣體為氮氣或氬氣與氫氣的混合氣體、抑或二氧化碳氣體且處理壓力為1~266Pa的組合。此情形時,特別容易形成濕潤張力優異的電漿處理面,而易於獲得剝離強度高的處理基板。 在前述氣體壓力下,若以例如頻率10kHz~2GHz之高頻於電極間施予10W~100kW的電力,則輝光放電會穩定。頻帶除了高頻以外,亦可使用低頻、微波、直流等。The gas pressure is preferably 0.1~1330Pa, preferably 1~266Pa. A suitable combination of processing gas and processing pressure during plasma processing can be, for example, a combination of nitrogen or a mixture of argon and hydrogen, or carbon dioxide gas with a processing pressure of 1-266 Pa. In this case, it is particularly easy to form a plasma-treated surface with excellent wetting tension, and it is easy to obtain a processed substrate with high peel strength. Under the aforementioned gas pressure, if a power of 10W to 100kW is applied between the electrodes at a high frequency of, for example, 10kHz to 2GHz, the glow discharge will be stable. As the frequency band, other than high frequency, low frequency, microwave, direct current, etc. may be used.

為能將F層之暴露面的濕潤張力落在適宜範圍,宜將放電電力設為10~500W、處理時間設為10~100秒。 真空電漿產生裝置宜為內部電極型。依情況亦可為外部電極型、線圈爐等電容耦合型或電感耦合型。 電極的形狀可舉如平板狀、環狀、棒狀、圓筒狀等。亦可為將處理裝置之金屬內壁作為其中一電極而形成接地之形狀。 要對電極間施加1000V以上之電壓以維持穩定的電漿狀態,宜對輸入電極施以具有極大耐電壓性的絕緣披覆。在銅、鐵、鋁等金屬裸露之電極的情形時,容易變成電弧放電,所以宜對電極表面施以琺瑯塗層、玻璃塗層、陶瓷塗層等。In order to keep the wetting tension of the exposed surface of the F layer within an appropriate range, it is advisable to set the discharge power at 10~500W and the treatment time at 10~100 seconds. The vacuum plasma generator is preferably an internal electrode type. According to the situation, it can also be capacitive coupling type or inductive coupling type such as external electrode type and coil furnace. The shape of the electrode may be, for example, a flat plate, a ring, a rod, or a cylinder. The shape of grounding can also be formed by using the metal inner wall of the processing device as one of the electrodes. To apply a voltage of more than 1000V between the electrodes to maintain a stable plasma state, it is advisable to apply an insulating coating with great voltage resistance to the input electrodes. In the case of exposed metal electrodes such as copper, iron, and aluminum, it is easy to cause arc discharge, so it is advisable to apply enamel coating, glass coating, ceramic coating, etc. to the electrode surface.

電漿處理面中F層之暴露面的濕潤張力以30mN/m以上為佳、30~60mN/m較佳、30~50mN/m以下更佳。電漿處理面中F層之暴露面的濕潤張力有F層表面之接著性基數量越多就會越高的傾向。濕潤張力若在前述範圍的下限値以上,則即便降低熱壓合溫度,F層與接著層之接剝離強度仍會更加提升。濕潤張力若在前述範圍的上限値以下,則表面處理所致污染物質就少,可抑制污染物質所致之密著阻礙。The wetting tension of the exposed surface of the F layer in the plasma treated surface is preferably above 30mN/m, more preferably 30~60mN/m, and more preferably below 30~50mN/m. The wetting tension of the exposed surface of the F layer in the plasma treated surface tends to be higher as the number of adhesive groups on the surface of the F layer increases. If the wetting tension is above the lower limit of the above-mentioned range, even if the thermocompression temperature is lowered, the bonding peel strength between the F layer and the adhesive layer will still be further improved. If the wetting tension is below the upper limit of the above-mentioned range, there will be less pollutants caused by the surface treatment, and the adhesion inhibition caused by the pollutants can be suppressed.

本發明之製造方法中,會進一步在低於260℃下使具電漿處理面之電路基板的電漿處理面與接著性基板之接著劑層進行熱壓合。例如,使前述電漿處理面與接著劑片進行熱壓合、或使前述電漿處理面與覆蓋薄膜之接著劑層進行熱壓合。 熱壓合的溫度低於260℃,且以低於220℃為佳、低於200℃以下較佳。熱壓合的溫度若低於260℃,熱壓合時導體電路等的位置不易錯位,又,可使用以習知接著性基板為對象的壓製裝置。In the manufacturing method of the present invention, the plasma-treated surface of the circuit substrate with the plasma-treated surface and the adhesive layer of the adhesive substrate are further thermally bonded at a temperature lower than 260°C. For example, the plasma-treated surface and the adhesive sheet are thermocompressed, or the plasma-treated surface and the adhesive layer of the cover film are thermocompressed. The thermocompression bonding temperature is lower than 260°C, preferably lower than 220°C, more preferably lower than 200°C. If the temperature of thermocompression bonding is lower than 260°C, the position of the conductor circuit etc. will not be displaced easily during thermocompression bonding, and a press device for conventional adhesive substrates can be used.

熱壓合的溫度,從F層與接著層之剝離強度優異的觀點來看係以120℃以上為佳、140℃以上較佳、160℃以上更佳。熱壓合的壓力以1~8MPa為佳、2~6MPa較佳。熱壓合的時間以30~150分鐘為佳、60~120分鐘較佳。 本發明之製造方法之適宜的第1態樣可舉下述具有多層導體電路之多層電路基板之製造方法:將原電路基板的導體電路側表面施行電漿處理而獲得具電漿處理面的電路基板,使多數個前述具電漿處理面之電路基板的電漿處理面各自相對並於各電漿處理面間配置接著劑片,使其在低於260℃下進行熱壓合。The temperature for thermocompression bonding is preferably 120°C or higher, more preferably 140°C or higher, and more preferably 160°C or higher from the viewpoint of excellent peel strength between the F layer and the adhesive layer. The pressure of hot pressing is preferably 1~8MPa, preferably 2~6MPa. The time for hot pressing is preferably 30-150 minutes, more preferably 60-120 minutes. A suitable first aspect of the manufacturing method of the present invention can include the following manufacturing method of a multilayer circuit substrate having a multilayer conductor circuit: plasma treatment is performed on the conductor circuit side surface of the original circuit substrate to obtain a circuit substrate with a plasma treatment surface, the plasma treatment surfaces of the plurality of circuit substrates with plasma treatment surfaces are made to face each other, an adhesive sheet is arranged between each plasma treatment surface, and thermal compression bonding is performed at a temperature lower than 260°C.

本發明之製造方法適宜的第2態樣可舉下述附覆蓋薄膜之電路基板之製造方法:將原電路基板的導體電路側表面施行電漿處理而獲得具電漿處理面的電路基板,再在低於260℃下使前述電路基板之電漿處理面與附接著劑層之覆蓋薄膜的接著劑層進行熱壓合。 圖1為表示多層電路基板之一例的剖面圖。多層電路基板1具有耐熱性基材層10、設在其兩面之F層12、設在F層12表面之導體電路14、與導體電路14表面及F層12表面相接的接著層16、以及與接著層16相接的覆蓋層18。A suitable second aspect of the manufacturing method of the present invention can be mentioned the following method of manufacturing a circuit substrate with a cover film: the conductor circuit side surface of the original circuit substrate is subjected to plasma treatment to obtain a circuit substrate with a plasma-treated surface, and then the plasma-treated surface of the circuit substrate and the adhesive layer of the cover film attached to the adhesive layer are subjected to thermal compression at a temperature lower than 260°C. FIG. 1 is a cross-sectional view showing an example of a multilayer circuit board. The multilayer circuit board 1 has a heat-resistant base material layer 10, an F layer 12 arranged on both sides thereof, a conductor circuit 14 arranged on the surface of the F layer 12, an adhesive layer 16 connected to the surface of the conductor circuit 14 and the surface of the F layer 12, and a cover layer 18 connected to the adhesive layer 16.

圖2為表示多層電路基板之一例的剖面圖。多層電路基板2具有2層耐熱性基材層10、設在各耐熱性基材層兩面之F層12、設在F層12表面之導體電路14、兩面與導體電路14表面及F層12表面相接的接著層16A、單面與導體電路14表面及F層12表面相接的接著層16B、以及與接著層16B相接的覆蓋層18。 圖3為表示多層電路基板之一例的剖面圖。多層電路基板3具有2層耐熱性基材層10、設於各耐熱性基材層單面之F層12、設在F層12表面之導體電路14、一表面與下側之導體電路14表面及F層12表面相接而另一表面與上側之耐熱性基材層10相接的接著層16A、單面與上側之導體電路14表面及F層12表面相接的接著層16B、以及與接著層16B相接之覆蓋層18。Fig. 2 is a cross-sectional view showing an example of a multilayer circuit board. The multilayer circuit substrate 2 has two layers of heat-resistant base material layers 10, F layers 12 arranged on both sides of each heat-resistant base material layer, conductor circuits 14 arranged on the surface of the F layer 12, an adhesive layer 16A in contact with the conductor circuit 14 surface and the F layer 12 surface on both sides, an adhesive layer 16B in contact with the conductor circuit 14 surface and the F layer 12 surface on one side, and a cover layer 18 in contact with the adhesive layer 16B. Fig. 3 is a cross-sectional view showing an example of a multilayer circuit board. The multilayer circuit board 3 has two heat-resistant substrate layers 10, an F layer 12 disposed on one side of each heat-resistant substrate layer, a conductor circuit 14 disposed on the surface of the F layer 12, an adhesive layer 16A in which one surface is in contact with the surface of the conductor circuit 14 on the lower side and the surface of the F layer 12, and the other surface is in contact with the heat-resistant substrate layer 10 on the upper side, an adhesive layer 16B in which one surface is in contact with the surface of the conductor circuit 14 on the upper side and the surface of the F layer 12, and the adhesive layer 16B. The covering layer 18.

圖4為表示製造圖1之多層電路基板之樣貌的剖面圖。 電路基板20具有耐熱性基材層10、設在其兩面之F層12、以及設在F層12表面之導體電路14。電路基板20之兩個表面係經電漿處理。 附接著劑層之覆蓋薄膜22具有由F層構成之覆蓋層18、以及設在覆蓋層18單面之接著劑層26。 以使電路基板20之電漿處理面與接著劑層26相接的方式從下方起依序堆疊附接著劑層之覆蓋薄膜22、電路基板20、及附接著劑層之覆蓋薄膜22後,在低於260℃下將其等熱壓合。Fig. 4 is a cross-sectional view showing the state of manufacturing the multilayer circuit board of Fig. 1 . The circuit board 20 has a heat-resistant base material layer 10 , F layers 12 provided on both surfaces thereof, and conductor circuits 14 provided on the surface of the F layer 12 . Both surfaces of the circuit substrate 20 are treated with plasma. The adhesive layer-attached cover film 22 has a cover layer 18 composed of an F layer, and an adhesive layer 26 provided on one side of the cover layer 18 . After the cover film 22 with the adhesive layer attached, the circuit board 20 , and the cover film 22 with the adhesive layer are stacked sequentially from below in such a way that the plasma-treated surface of the circuit board 20 is in contact with the adhesive layer 26, they are heat-compressed at a temperature lower than 260°C.

圖5為表示製造圖2之多層電路基板之樣貌的剖面圖。 以使電路基板20之電漿處理面與接著劑層26相接的方式從下方起依序堆疊附接著劑層之覆蓋薄膜22、電路基板20、接著劑片24、電路基板20、附接著劑層之覆蓋薄膜22後,在低於260℃下將其等熱壓合。 圖6為表示製造圖3之多層電路基板之樣貌的剖面圖。 電路基板30具有耐熱性基材層10、設在其單面之F層12、以及設在F層12表面之導體電路14。電路基板30之導體電路14側的表面係經電漿處理。 以使電路基板30之電漿處理面與接著劑層26相接的方式從下方起依序堆疊電路基板30、接著劑片24、電路基板30、及附接著劑層之覆蓋薄膜22後,在低於260℃下將其等熱壓合。Fig. 5 is a cross-sectional view showing the state of manufacturing the multilayer circuit board of Fig. 2 . The adhesive layer-attached cover film 22, circuit board 20, adhesive sheet 24, circuit board 20, and adhesive layer-attached cover film 22 are stacked sequentially from below in such a way that the plasma-treated surface of the circuit board 20 is in contact with the adhesive layer 26, and then heat-compressed at a temperature lower than 260°C. Fig. 6 is a cross-sectional view showing the state of manufacturing the multilayer circuit board of Fig. 3 . The circuit board 30 has a heat-resistant base material layer 10 , an F layer 12 provided on one surface thereof, and a conductor circuit 14 provided on the surface of the F layer 12 . The surface of the circuit board 30 on the conductor circuit 14 side is treated with plasma. After the circuit substrate 30, the adhesive sheet 24, the circuit substrate 30, and the cover film 22 with the adhesive layer attached are stacked sequentially from below in such a way that the plasma-treated surface of the circuit substrate 30 is in contact with the adhesive layer 26, they are heat-compressed at a temperature lower than 260°C.

在以上所說明之本發明之製造方法中,由於原電路基板之設有導體電路側的表面已進行電漿處理,故即便在低於260℃下原電路基板與接著性基板之接著劑層仍會充分熱壓合。結果可獲得F層與接著層之接著性優良、且F層及導體電路之剝離強度為例如5N/cm以上的處理電路基板(多層電路基板、附覆蓋薄膜之電路基板等)。In the manufacturing method of the present invention described above, since the surface of the original circuit board on the side where the conductor circuit is provided has been subjected to plasma treatment, the adhesive layer of the original circuit board and the adhesive substrate can still be fully thermally bonded even at a temperature lower than 260°C. As a result, a processed circuit board (multilayer circuit board, circuit board with cover film, etc.) with excellent adhesion between the F layer and the adhesive layer and a peel strength of, for example, 5 N/cm or more between the F layer and the conductor circuit can be obtained.

本發明之附接著劑層之薄膜(以下亦表記為接著薄膜),是依序積層有F聚合物之薄膜(以下亦表記為F薄膜)與熱硬化性接著劑層的薄膜。在壓製溫度160℃、壓製壓力4MPa、壓製時間90分鐘的條件下使接著薄膜之熱硬化性接著劑層硬化後,F薄膜與硬化後之前述熱硬化性接著劑層之界面的剝離強度為5N/cm以上。The adhesive layer-attached film (hereinafter also referred to as the adhesive film) of the present invention is a film in which the F polymer film (hereinafter also referred to as the F film) and the thermosetting adhesive layer are sequentially laminated. After hardening the thermosetting adhesive layer attached to the film under the conditions of pressing temperature 160°C, pressing pressure 4 MPa, and pressing time 90 minutes, the peel strength of the interface between the F film and the hardened thermosetting adhesive layer is 5 N/cm or more.

接著薄膜可為僅於F薄膜單面積層有熱硬化性接著劑層,亦可為於F薄膜雙面積層有熱硬化性接著劑層。僅於F薄膜之單面積層有熱硬化性接著劑層的F薄膜有利於作為覆蓋薄膜。於F薄膜之雙面積層有熱硬化性接著劑層的F薄膜有利於作為層間絕緣薄膜。在接著薄膜為於F薄膜雙面具有熱硬化性接著劑層的情形時,就任一熱硬化性接著劑層而言,F薄膜與硬化後熱硬化性接著劑層之界面的剝離強度皆為5N/cm以上。The subsequent film may have a thermosetting adhesive layer on only one side of the F film, or may have a thermosetting adhesive layer on both sides of the F film. An F film with a thermosetting adhesive layer on only one side of the F film is advantageous as a cover film. The F film having a thermosetting adhesive layer on the double-sided layer of the F film is advantageous as an interlayer insulating film. When the adhesive film has thermosetting adhesive layers on both sides of the F film, the peel strength of the interface between the F film and the cured thermosetting adhesive layer is 5 N/cm or more for either thermosetting adhesive layer.

F薄膜與硬化後之前述熱硬化性接著劑層之界面的剝離強度係8N/cm以上為佳、10N/cm以上較佳。前述剝離強度若在前述範圍之下限値以上,F薄膜與硬化後之熱硬化性接著劑層的接著性便優異。前述剝離強度愈高愈佳,上限値並無限定。 接著薄膜中的熱硬化性接著劑層係含有熱硬化性接著劑。 接著薄膜中的熱硬化性接著劑層之厚度以5~50μm為佳。當接著薄膜於F薄膜雙面具有熱硬化性接著劑層時,各個熱硬化性接著劑層之厚度宜為前述範圍。The peel strength of the interface between the F film and the cured thermosetting adhesive layer is preferably 8 N/cm or higher, more preferably 10 N/cm or higher. If the aforementioned peel strength is more than the lower limit value of the aforementioned range, the adhesion between the F film and the cured thermosetting adhesive layer will be excellent. The higher the peel strength, the better, and the upper limit is not limited. Next, the thermosetting adhesive layer in the film contains a thermosetting adhesive. Next, the thickness of the thermosetting adhesive layer in the film is preferably 5-50 μm. When the adhesive film has thermosetting adhesive layers on both sides of the F film, the thickness of each thermosetting adhesive layer is preferably within the aforementioned range.

熱硬化性接著劑層宜含有熱硬化性樹脂。熱硬化性接著劑層宜進一步含有硬化劑與硬化促進劑。 接著薄膜中的熱硬化性樹脂、硬化劑及硬化促進劑的種類,係與上述本發明之處理電路基板之製造方法所述者相同,其適宜範圍亦同。 接著薄膜中的F薄膜係含有四氟乙烯系聚合物(F聚合物)之薄膜,該聚合物具有以四氟乙烯為主之單元。The thermosetting adhesive layer preferably contains a thermosetting resin. The thermosetting adhesive layer preferably further contains a curing agent and a curing accelerator. Next, the types of the thermosetting resin, curing agent, and curing accelerator in the film are the same as those described above for the manufacturing method of the processed circuit board of the present invention, and their suitable ranges are also the same. Next, the F film among the films is a film containing a tetrafluoroethylene-based polymer (F polymer) having units mainly composed of tetrafluoroethylene.

F薄膜亦可含有無機填料、F聚合物以外之樹脂、添加劑等。F薄膜中之F聚合物的比率以90質量%以上較佳。F聚合物之比率的上限値為100質量%。 F薄膜之厚度宜為12~100μm。 接著薄膜中的F聚合物,與上述本發明之處理電路基板之製造方法中的F聚合物相同,其適宜範圍亦同。 接著薄膜之製造方法可舉如:在F薄膜之一或兩表面上塗佈熱硬化性接著劑的方法;在F薄膜之一或兩表面上積層熱硬化性接著劑片的方法。在將接著薄膜作為覆蓋薄膜使用時,係於F薄膜之其中一表面形成熱硬化性接著劑層。在將接著薄膜作為層間絕緣薄膜使用時,係於F薄膜兩面形成熱硬化性接著劑層。F film may also contain inorganic fillers, resins other than F polymer, additives, etc. The ratio of the F polymer in the F film is preferably 90% by mass or more. The upper limit of the ratio of the F polymer is 100% by mass. The thickness of F film should be 12~100μm. Next, the F polymer in the thin film is the same as the F polymer in the above-mentioned method for manufacturing a circuit board of the present invention, and its suitable range is also the same. The manufacturing method of the subsequent film can be, for example: a method of coating a thermosetting adhesive on one or both surfaces of the F film; a method of laminating a thermosetting adhesive sheet on one or both surfaces of the F film. When using the adhesive film as a cover film, a thermosetting adhesive layer is formed on one surface of the F film. When using the adhesive film as an interlayer insulating film, a thermosetting adhesive layer is formed on both sides of the F film.

熱硬化性接著劑的塗佈方法可舉如模塗法、噴塗法、輥塗法、旋塗法、凹版塗佈法、微凹版塗佈法、凹版平版法、刮刀塗佈法、接觸塗佈法、棒塗法、噴泉式線棒法、狹縫式模塗法等。 將F薄膜與熱硬化性接著劑片積層的方法可舉如壓製、輥壓層合、雙帶式壓製等。Examples of coating methods for thermosetting adhesives include die coating, spray coating, roll coating, spin coating, gravure coating, micro gravure coating, gravure lithography, knife coating, contact coating, rod coating, fountain wire bar, slot die coating, and the like. The method of laminating the F film and the thermosetting adhesive sheet includes pressing, roll lamination, double-belt pressing, and the like.

在接著薄膜的製造上,宜於F薄膜之一或兩表面進行電漿處理,並於F薄膜之經電漿處理側之表面形成熱硬化性接著劑層。藉此,F薄膜與熱硬化性接著劑層之接著性便會更加優異。電漿處理之諸條件,係與本發明之處理電路基板之製造方法中於電漿處理所載內容相同,其適宜範圍亦同。 接著薄膜中,F薄膜之電漿處理面的濕潤張力以30mN/m以上為佳、30~60mN/m較佳、30~50mN/m更佳。F薄膜之電漿處理面的濕潤張力,有F薄膜表面之官能基量愈多就會愈高的傾向。濕潤張力若在前述範圍之下限値以上,則即便調低熱壓合的溫度,F薄膜與熱硬化性接著劑層之接著性仍更為優異。濕潤張力若在前述範圍之上限値以下,因表面處理而生成之污染物質少,難以發生污染物質所致之密著阻礙。In the manufacture of the adhesive film, it is advisable to conduct plasma treatment on one or both surfaces of the F film, and form a thermosetting adhesive layer on the surface of the plasma-treated side of the F film. Thereby, the adhesion between the F film and the thermosetting adhesive layer will be more excellent. The conditions of the plasma treatment are the same as those described in the plasma treatment in the manufacturing method of the circuit board of the present invention, and the suitable range is also the same. In the following film, the wetting tension of the plasma-treated surface of the F film is preferably 30mN/m or more, preferably 30-60mN/m, and more preferably 30-50mN/m. The wetting tension of the plasma-treated surface of the F film tends to be higher as the amount of functional groups on the surface of the F film increases. If the wetting tension is above the lower limit of the aforementioned range, even if the thermocompression temperature is lowered, the adhesion between the F film and the thermosetting adhesive layer is still more excellent. If the wetting tension is below the upper limit of the aforementioned range, less pollutants will be produced by surface treatment, and it will be less likely to cause adhesion hindrance caused by pollutants.

如以上說明,本發明之接著薄膜係積層有F薄膜與熱硬化性接著劑層。由於F薄膜有優於聚醯亞胺薄膜的電特性,在作為高頻用途之印刷基板材料使用時能夠減少傳輸損耗。又,本發明之接著薄膜在溫度160℃、壓力4MPa及時間90分鐘之條件下進行熱壓合而使熱硬化性接著劑層硬化後,F薄膜與硬化後之熱硬化性接著劑層之界面的剝離強度為5N/cm以上。因此,本發明之接著薄膜與電路基板即便是在較低溫(低於260℃)的熱壓合下仍能夠牢固地接著。As explained above, the adhesive film of the present invention is laminated with the F film and the thermosetting adhesive layer. Since F film has better electrical characteristics than polyimide film, it can reduce transmission loss when used as a printed substrate material for high-frequency applications. In addition, after the adhesive film of the present invention is thermocompressed at a temperature of 160°C, a pressure of 4 MPa, and a time of 90 minutes to harden the thermosetting adhesive layer, the peel strength of the interface between the F film and the cured thermosetting adhesive layer is 5 N/cm or more. Therefore, the bonding film of the present invention and the circuit substrate can still be firmly bonded even under relatively low temperature (lower than 260° C.) thermocompression bonding.

再者,本發明之接著薄膜中,若使用具官能基之F聚合物作為F聚合物,便容易將F薄膜與硬化後熱硬化性接著劑層之界面的剝離強度調整至5N/cm以上。又,若在經電漿處理調整表面濕潤性之F薄膜表面上形成熱硬化性接著劑層,便容易將F薄膜與硬化後熱硬化性接著劑層之界面的剝離強度調整至5N/cm以上。 本發明之接著薄膜宜作為覆蓋薄膜或層間絕緣薄膜來使用,尤宜作為上述本發明之處理基板之製造方法中的接著性基材使用。 圖7為表示將接著薄膜作為覆蓋薄膜使用之一例的剖面圖。接著薄膜10'具有F薄膜12'、及設在F薄膜12'表面之熱硬化性接著劑層14'。F薄膜12'之熱硬化性接著劑層14'側的表面係經電漿處理。Furthermore, in the adhesive film of the present invention, if the F polymer with functional groups is used as the F polymer, it is easy to adjust the peel strength of the interface between the F film and the cured thermosetting adhesive layer to 5 N/cm or more. Also, if a thermosetting adhesive layer is formed on the surface of the F film whose surface wettability has been adjusted by plasma treatment, it is easy to adjust the peel strength of the interface between the F film and the cured thermosetting adhesive layer to 5 N/cm or more. The adhesive film of the present invention is preferably used as a cover film or an interlayer insulating film, especially as an adhesive base material in the above-mentioned method for manufacturing a processed substrate of the present invention. Fig. 7 is a cross-sectional view showing an example of using an adhesive film as a cover film. Next, the film 10' has an F film 12' and a thermosetting adhesive layer 14' provided on the surface of the F film 12'. The surface of the F film 12' on the side of the thermosetting adhesive layer 14' is treated with plasma.

圖8為表示將接著薄膜作為層間絕緣薄膜使用之一例的剖面圖。接著薄膜11'具有F薄膜12'、及設在其雙面之熱硬化性接著劑層14'。F薄膜12'之熱硬化性接著劑層14'側的表面係經電漿處理。 圖9為表示將接著薄膜作為覆蓋薄膜的附覆蓋薄膜之電路基板之一例的剖面圖。附覆蓋薄膜之電路基板1'具有絕緣層20'、設於其雙面之導體電路22'、以及接著薄膜10'',該接著薄膜10''係與導體電路22'表面及絕緣層20'表面相接之硬化後的接著薄膜10'。接著薄膜10''中,接著薄膜10'之熱硬化性接著劑層14'經熱硬化而形成之接著層14'',係與導體電路22'表面、及絕緣層20'之設有導體電路22'部分以外之表面相接。Fig. 8 is a cross-sectional view showing an example of using an adhesive film as an interlayer insulating film. Next, the film 11' has an F film 12' and thermosetting adhesive layers 14' provided on both sides thereof. The surface of the F film 12' on the side of the thermosetting adhesive layer 14' is treated with plasma. Fig. 9 is a cross-sectional view showing an example of a circuit board with a cover film in which an adhesive film is used as a cover film. The circuit substrate 1' with a cover film has an insulating layer 20', a conductor circuit 22' disposed on both sides thereof, and an adhesive film 10''. The adhesive film 10'' is a hardened adhesive film 10' that is in contact with the surface of the conductor circuit 22' and the surface of the insulating layer 20'. In the following film 10'', the thermosetting adhesive layer 14' of the film 10' is thermally hardened to form an adhesive layer 14'' that is in contact with the surface of the conductive circuit 22' and the surface of the insulating layer 20' other than the part where the conductive circuit 22' is provided.

圖10為表示將接著薄膜作為覆蓋薄膜的附覆蓋薄膜之電路基板之另一例的剖面圖。附覆蓋薄膜之電路基板2'具有2個絕緣層20'、設於其雙面之導體電路22'、雙面與導體電路22'表面及絕緣層20'表面相接的接著層24''、以及與導體電路22'表面及絕緣層20'表面相接之接著薄膜10''。 圖11為表示將接著薄膜作為覆蓋薄膜的附覆蓋薄膜之電路基板之另一例的剖面圖。附覆蓋薄膜之電路基板3'具有2個絕緣層20'、設於其單面之導體電路22'、接著層24''、以及與上側之導體電路22'表面及絕緣層20'表面相接之接著薄膜10'',且前述接著層24''之一表面與下側之導體電路22'表面及絕緣層20'表面相接而另一表面與上側之絕緣層20'相接。Fig. 10 is a cross-sectional view showing another example of a circuit board with a cover film in which an adhesive film is used as a cover film. The circuit substrate 2' with a cover film has two insulating layers 20', a conductor circuit 22' on both sides, an adhesive layer 24'' that is in contact with the surface of the conductor circuit 22' and the surface of the insulating layer 20', and an adhesive film 10'' that is in contact with the surface of the conductor circuit 22' and the surface of the insulating layer 20'. Fig. 11 is a cross-sectional view showing another example of a circuit board with a cover film in which an adhesive film is used as a cover film. The circuit substrate 3' with a cover film has two insulating layers 20', a conductor circuit 22' on one side thereof, an adhesive layer 24'', and an adhesive film 10'' that is in contact with the surface of the conductor circuit 22' on the upper side and the surface of the insulating layer 20', and one surface of the aforementioned adhesive layer 24'' is in contact with the surface of the conductor circuit 22' and the surface of the insulating layer 20' on the lower side, while the other surface is in contact with the insulating layer 20' on the upper side.

圖12為表示將接著薄膜作為覆蓋薄膜及層間絕緣薄膜的附覆蓋薄膜之多層電路基板之一例的剖面圖。附覆蓋薄膜之多層電路基板4'具有2個絕緣層20'、設於各絕緣層雙面之導體電路22'、接著薄膜11''、以及與導體電路22'表面及絕緣層20'表面相接之接著薄膜10'',且前述接著薄膜11''係雙面與導體電路22'表面及絕緣層20'表面相接之硬化後的接著薄膜11'。 接著薄膜10''中,接著薄膜10'之熱硬化性接著劑層14'經熱硬化而形成之接著層14'',係與導體電路22'表面、及絕緣層20'之設有導體電路22'部分以外之表面相接。 接著薄膜11''之雙面中,接著薄膜11雙面之熱硬化性接著劑層14經熱硬化而形成之接著層14'',係與導體電路22'表面及絕緣層20'各別表面相接。12 is a cross-sectional view showing an example of a cover film-attached multilayer circuit board in which an adhesive film is used as a cover film and an interlayer insulating film. The multilayer circuit substrate 4' with a cover film has two insulating layers 20', a conductor circuit 22' disposed on both sides of each insulating layer, an adhesive film 11'', and an adhesive film 10'' that is in contact with the surface of the conductor circuit 22' and the surface of the insulating layer 20'. In the following film 10'', the thermosetting adhesive layer 14' of the film 10' is thermally hardened to form an adhesive layer 14'' that is in contact with the surface of the conductive circuit 22' and the surface of the insulating layer 20' other than the part where the conductive circuit 22' is provided. On both sides of the film 11'', the thermosetting adhesive layer 14 on both sides of the film 11 is thermally hardened to form an adhesive layer 14'', which is in contact with the surface of the conductor circuit 22' and the surface of the insulating layer 20' respectively.

圖13為表示將接著薄膜作為覆蓋薄膜及層間絕緣薄膜的附覆蓋薄膜之多層電路基板之另一例的剖面圖。附覆蓋薄膜之電路基板5具有2個絕緣層20'、設於各絕緣層單面之導體電路22'、接著薄膜11''、以及與上側之導體電路22'表面及絕緣層20'表面相接的接著薄膜10'',且前述接著薄膜11''之一表面與下側之導體電路22'表面及絕緣層20'表面相接而另一表面與上側之絕緣層20'相接。Fig. 13 is a cross-sectional view showing another example of a cover film-attached multilayer circuit board in which an adhesive film is used as a cover film and an interlayer insulating film. The circuit substrate 5 with a cover film has two insulating layers 20', a conductor circuit 22' on one side of each insulating layer, an adhesive film 11'', and an adhesive film 10'' that is in contact with the surface of the conductor circuit 22' and the surface of the insulating layer 20' on the upper side.

圖14為表示製造圖9之電路基板之樣貌的剖面圖。 電路基板30'具有絕緣層20'、以及設於其雙面之導體電路22'。電路基板30'雙面之絕緣層20'表面係經電漿處理。以使電路基板30'電漿處理面與熱硬化性接著劑層14'相接的方式從下方起依序堆疊接著薄膜10'、電路基板30'、接著薄膜10'後,將其等熱壓合。Fig. 14 is a cross-sectional view showing how the circuit board of Fig. 9 is manufactured. The circuit substrate 30' has an insulating layer 20' and conductor circuits 22' provided on both sides thereof. The surface of the insulating layer 20' on both sides of the circuit substrate 30' is treated with plasma. The adhesive film 10', the circuit board 30', and the adhesive film 10' are stacked in order from below so that the plasma-treated surface of the circuit board 30' is in contact with the thermosetting adhesive layer 14', and then thermally press-bonded.

圖15為表示製造圖10之電路基板之樣貌的剖面圖。 以使電路基板30'之電漿處理面與熱硬化性接著劑層14'相接的方式由下方起依序堆疊接著薄膜10'、電路基板30'、接著劑片24'、電路基板30'、接著薄膜10'後,將其等熱壓合。 圖16為表示製造圖11之電路基板之樣貌的剖面圖。 電路基板32'具有絕緣層20'、以及設於其單面之導體電路22。電路基板32'之絕緣層20'之設有導體電路22'側的表面係經電漿處理。以使電路基板32'之電漿處理面與熱硬化性接著劑層14'相接的方式由下方起依序堆疊電路基板32'、接著劑片24'、電路基板32'、接著薄膜10'後,將其等熱壓合。Fig. 15 is a cross-sectional view showing how the circuit board of Fig. 10 is manufactured. The adhesive film 10', the circuit board 30', the adhesive sheet 24', the circuit board 30', and the adhesive film 10' are stacked sequentially from below in such a way that the plasma-treated surface of the circuit board 30' is in contact with the thermosetting adhesive layer 14', and then thermally pressed together. Fig. 16 is a cross-sectional view showing how the circuit board of Fig. 11 is manufactured. The circuit board 32' has an insulating layer 20' and a conductor circuit 22 provided on one side thereof. The surface of the insulating layer 20' of the circuit substrate 32' on the side where the conductor circuit 22' is provided is treated with plasma. The circuit board 32', the adhesive sheet 24', the circuit board 32', and the adhesive film 10' are stacked sequentially from below in such a way that the plasma-treated surface of the circuit board 32' is in contact with the thermosetting adhesive layer 14', and then thermally pressed together.

圖17為表示製造圖12之電路基板之樣貌的剖面圖。 以使電路基板30'之電漿處理面與熱硬化性接著劑層14'相接的方式由下方起依序堆疊接著薄膜10'、電路基板30'、接著薄膜11'、電路基板30'、接著薄膜10'後,將其等熱壓合。 圖18為表示製造圖13之電路基板之樣貌的剖面圖。 以使電路基板32'之電漿處理面與熱硬化性接著劑層14'相接的方式從下方起依序堆疊電路基板32'、接著薄膜11'、電路基板32'、接著薄膜10'後,將其等熱壓合。Fig. 17 is a cross-sectional view showing how the circuit board of Fig. 12 is manufactured. The bonding film 10', the circuit substrate 30', the bonding film 11', the circuit substrate 30', and the bonding film 10' are stacked sequentially from below in such a way that the plasma-treated surface of the circuit substrate 30' is in contact with the thermosetting adhesive layer 14', and then heat-compressed. Fig. 18 is a cross-sectional view showing how the circuit board of Fig. 13 is manufactured. The circuit board 32', the adhesive film 11', the circuit board 32', and the adhesive film 10' are sequentially stacked from below in such a way that the plasma-treated surface of the circuit board 32' is in contact with the thermosetting adhesive layer 14', and then heat-compressed.

另,電路基板30'及32'宜為於上述本發明製造方法中至少將原電路基板之導體電路側之表面進行電漿處理而獲得之具有電漿處理面之電路基板。 如以上說明,本發明之接著薄膜是作為覆蓋薄膜、層間絕緣薄膜等時具有優異的電特性、於高頻用途上能夠減少傳輸損耗、並能夠在較低溫使用(低於260℃)的薄膜。In addition, the circuit boards 30' and 32' are preferably circuit boards having a plasma-treated surface obtained by plasma-treating at least the surface of the original circuit board on the conductor circuit side in the above-mentioned manufacturing method of the present invention. As explained above, the adhesive film of the present invention has excellent electrical properties when used as a cover film, an interlayer insulating film, etc., can reduce transmission loss in high-frequency applications, and can be used at relatively low temperatures (less than 260°C).

實施例 以下,以實施例詳細說明本發明,惟本發明不受該等限定解釋。另,實施例等所使用的材料、和物性及評價方法係如以下所述。 (聚合物的熔點) 用示差掃描熱量計(Seiko Instruments Inc.製、DSC-7020)記錄聚合物在10℃/分鐘之速度下升溫時的熔解峰,並以對應極大值之溫度(℃)作為熔點。Example Hereinafter, the present invention will be described in detail with examples, but the present invention should not be interpreted by these limitations. In addition, the materials, physical properties, and evaluation methods used in Examples and the like are as follows. (melting point of polymer) A differential scanning calorimeter (DSC-7020 manufactured by Seiko Instruments Inc.) was used to record the melting peak of the polymer when the temperature was raised at a rate of 10°C/min, and the temperature (°C) corresponding to the maximum value was taken as the melting point.

(聚合物的熔融流速) 使用熔融指數測定儀(Technol Seven Co.,Ltd.製),測定在372℃、49N負載下從直徑2mm且長8mm之噴嘴流出10分鐘之共聚物的質量(g),視為熔融流速。 (濕潤張力) 電漿處理後聚合物層之暴露面的濕潤張力,是使用濕潤張力試驗用混合液(和光純藥工業公司製),按照JIS K 6768:1999而求得。 (剝離強度) 將對象物(薄膜或處理電路基板)裁切成長150mm、寬度10mm,製作評估試樣。將聚合物層與接著層之間從評估試樣之長度方向之一端剝離至50mm之位置。使用拉伸試驗機,在拉伸速度50mm/分下以形成90°之方式剝離,並以測定距離20mm至80mm之平均荷重作為剝離強度(N/cm)。(melt flow rate of polymer) Using a melt indexer (manufactured by Technol Seven Co., Ltd.), the mass (g) of the copolymer flowing out from a nozzle with a diameter of 2 mm and a length of 8 mm under a load of 49 N at 372° C. for 10 minutes was measured, and it was regarded as a melt flow rate. (wet tension) The wetting tension of the exposed surface of the polymer layer after plasma treatment was determined in accordance with JIS K 6768:1999 using a mixed liquid for wetting tension test (manufactured by Wako Pure Chemical Industries, Ltd.). (peel strength) The object (film or processed circuit board) is cut out to a length of 150 mm and a width of 10 mm to prepare an evaluation sample. Peel off the polymer layer and the adhesive layer from one end of the evaluation sample in the longitudinal direction to a position of 50 mm. Using a tensile testing machine, peel at 90° at a tensile speed of 50 mm/min, and measure the average load at a distance of 20 mm to 80 mm as the peel strength (N/cm).

<TFE系聚合物> 聚合物F1:按照國際公開案第2016/104297號段落[0111]~[0113]之記載所製造的聚合物(各單元之比率(莫耳比):TFE單元/NAH單位/PPVE單位=97.9/0.1/2.0,接著性基含量:相對於聚合物之主鏈碳數1×106 個為1000個,熔點:305℃,熔融流速:11.0g/10分,氟含量:75質量%)。 聚合物F2:市售PFA(各單元之比率(莫耳比):TFE單元/PPVE單位=98.0/2.0,熔點:310℃,熔融流速:11.0g/10分,氟含量:75質量%)。<TFE-based polymer> Polymer F1: polymer produced according to paragraphs [0111]~[0113] of International Publication No. 2016/104297 (ratio of each unit (molar ratio): TFE unit/NAH unit/PPVE unit=97.9/0.1/2.0, adhesive group content: 1000 units relative to the number of carbons in the main chain of the polymer 1×10 6 , melting point: 305°C, melting Flow rate: 11.0 g/10 minutes, fluorine content: 75% by mass). Polymer F2: Commercially available PFA (ratio of each unit (molar ratio): TFE unit/PPVE unit=98.0/2.0, melting point: 310° C., melting flow rate: 11.0 g/10 minutes, fluorine content: 75% by mass).

<薄膜F1> 薄膜F1:使用具有750mm寬度之衣架型模具的65mmφ單軸擠製機,在模具溫度340℃下將聚合物F1擠製成形為薄膜狀而獲得之薄膜(厚度12μm)。 <薄膜F2> 薄膜F2:使用具有750mm寬度之衣架型模具的65mmφ單軸擠製機,在模具溫度340℃下將聚合物F2擠製成形為薄膜狀而獲得之薄膜(厚度12μm)。<Film F1> Film F1: A film obtained by extruding polymer F1 into a film at a die temperature of 340° C. using a 65 mmφ single-screw extruder having a coat hanger-shaped die with a width of 750 mm (thickness: 12 μm). <Film F2> Film F2: A film (thickness 12 μm) obtained by extruding polymer F2 into a film at a die temperature of 340° C. using a 65 mmφ single-screw extruder having a coat hanger-shaped die with a width of 750 mm.

<聚醯亞胺薄膜> 薄膜PI:東麗-杜邦公司製KAPTON(商品名)100EN (厚度:25μm)。 <銅箔> 銅箔:電解銅箔(福田金屬箔粉工業公司製、CF-T4X-SV-12、厚度:12μm、表面算術平均粗度(RzJIS ):1.1μm)。<Polyimide film> Film PI: KAPTON (trade name) 100EN (thickness: 25 μm) manufactured by Toray-DuPont Corporation. <Copper foil> Copper foil: Electrolytic copper foil (manufactured by Fukuda Metal Foil Powder Industry Co., Ltd., CF-T4X-SV-12, thickness: 12 μm, surface arithmetic average roughness (Rz JIS ): 1.1 μm).

<熱硬化性接著劑片> 接著劑片1:尼關工業公司製NIKAFLEX(商品名)SAFG(厚度:25μm)。 接著劑片11:含有丙烯腈丁二烯改質環氧樹脂、氫氧化鋁、丙烯酸橡膠、胺基三酚醛清漆樹脂(硬化劑)及咪唑(硬化促進劑)的接著劑片(厚度:15μm)。<Thermosetting adhesive sheet> Adhesive sheet 1: NIKAFLEX (trade name) SAFG (thickness: 25 μm) manufactured by Nikkan Kogyo Co., Ltd. Adhesive Tablet 11: Contains acrylonitrile butadiene modified epoxy resin, aluminum hydroxide, acrylic rubber, amino three Adhesive sheet (thickness: 15 μm) of novolak resin (curing agent) and imidazole (hardening accelerator).

[例1]附接著層之薄膜的製造例及評價例 [例1-1] 在氣體壓力20Pa之二氧化碳氣體環境下於電極間施加110kHz之高頻電壓,並在放電電力300W、60秒鐘之條件下對薄膜F1之單面進行電漿處理。薄膜F1之電漿處理面的濕潤張力為50mN/m。 於薄膜F1之電漿處理面堆疊接著劑片1,獲得附熱硬化性接著層之薄膜Ad1。利用真空壓製,將薄膜Ad1壓製處理(溫度160℃、壓力4MPa、時間90分),對處理後之薄膜Ad1測定薄膜F1與硬化後接著層之界面的剝離強度,結果為8N/cm。[Example 1] Production example and evaluation example of a thin film with an adhesive layer [Example 1-1] A high-frequency voltage of 110 kHz was applied between the electrodes in a carbon dioxide gas environment with a gas pressure of 20 Pa, and plasma treatment was performed on one side of the film F1 under the condition of a discharge power of 300 W for 60 seconds. The wetting tension of the plasma-treated surface of film F1 was 50 mN/m. Adhesive sheet 1 was stacked on the plasma-treated surface of film F1 to obtain film Ad1 with a thermosetting adhesive layer. Film Ad1 was press-treated by vacuum pressing (temperature 160°C, pressure 4 MPa, time 90 minutes), and the peel strength of the interface between film F1 and the hardened adhesive layer was measured for the treated film Ad1, and the result was 8N/cm.

[例1-2]~[例1-7] 除了變更薄膜種類與電漿處理條件以外,以和例1-1相同方式,分別獲得附熱硬化性接著層之薄膜Ad2~Ad7。 將各個附接著層之薄膜的製造條件、濕潤張力、及剝離強度彙整示於表1。[Example 1-2] ~ [Example 1-7] Except for changing the type of film and plasma treatment conditions, in the same manner as in Example 1-1, films Ad2-Ad7 with thermosetting adhesive layers were respectively obtained. Table 1 summarizes the production conditions, wetting tension, and peel strength of the films of the respective adhesive layers.

[表1] [Table 1]

另,例1-3(比較例)中,將電漿處理後之薄膜F1與接著劑片1重疊,在將壓製處理條件設為溫度280℃、壓力4MPa、時間30分進行壓製處理後,其界面之剝離強度係低於0.2N/cm。咸認此係蓋因壓製處理時溫度為280℃而接著層已熱分解之故。In addition, in Examples 1-3 (comparative examples), the plasma-treated film F1 was superimposed on the adhesive sheet 1, and the peeling strength of the interface was lower than 0.2 N/cm after the pressing treatment conditions were set at a temperature of 280° C., a pressure of 4 MPa, and a time of 30 minutes. It is believed that this is due to the fact that the temperature of the pressing process was 280°C and the adhesive layer had been thermally decomposed.

[例2]處理電路基板的製造例及評價例(其1) [例2-1] 依序堆積銅箔、薄膜F1、薄膜PI、薄膜F1、銅箔,並以真空下、320℃、30分鐘的條件進行熱壓製而獲得覆金屬積層板。 將覆金屬積層板之單面遮蔽,浸漬於蝕刻液(Sunhayato公司製、H-1000A、氯化鐵水溶液)中,將單面的銅箔完全去除。 隨後,在氣體壓力20Pa之二氧化碳氣體環境下於電極間施加110kHz之高頻電壓,並在放電電力300W、60秒鐘之條件下對薄膜F1層之暴露面進行電漿處理,而獲得具有電漿處理面之電路基板1。電漿處理面之薄膜F1層之暴露面的濕潤張力為50mN/m。[Example 2] Production example and evaluation example of processed circuit board (Part 1) [Example 2-1] The copper foil, the film F1, the film PI, the film F1, and the copper foil were sequentially stacked, and hot-pressed under vacuum at 320° C. for 30 minutes to obtain a metal-clad laminate. One side of the metal-clad laminate was masked and immersed in an etching solution (manufactured by Sunhayato Co., Ltd., H-1000A, ferric chloride aqueous solution) to completely remove the copper foil on one side. Subsequently, a high-frequency voltage of 110 kHz was applied between the electrodes in a carbon dioxide gas environment with a gas pressure of 20 Pa, and plasma treatment was performed on the exposed surface of the film F1 layer under the condition of a discharge power of 300 W for 60 seconds, and a circuit substrate 1 with a plasma-treated surface was obtained. The wetting tension of the exposed surface of the film F1 layer on the plasma-treated surface was 50 mN/m.

將2片電路基板1以各自之電漿處理面相對向的方式配置,在其間插入堆疊接著劑片1,並進行熱壓製處理(溫度160℃、壓力4MPa、熱壓合90分鐘)而熱壓合,從而獲得隔著接著劑片1之硬化物而接著有2片電路基板1的處理電路基板1。測定薄膜F1與硬化後接著層之界面的剝離強度,結果為8N/cm。Arrange two circuit boards 1 with their respective plasma-treated surfaces facing each other, insert and stack adhesive sheets 1 therebetween, and perform thermal compression treatment (temperature 160° C., pressure 4 MPa, thermocompression bonding for 90 minutes) to obtain a processed circuit board 1 in which two circuit boards 1 are adhered via the cured product of the adhesive sheet 1 . The peel strength of the interface between the film F1 and the cured adhesive layer was measured and found to be 8 N/cm.

[例2-2]~[例2-7] 除了變更薄膜種類與電漿處理條件以外,以和例1-1相同方式,分別獲得處理電路基板2~4。 將各個處理電路基板的製造條件、薄膜層的濕潤張力及剝離強度彙整示於表2。[Example 2-2] ~ [Example 2-7] Processed circuit substrates 2 to 4 were obtained in the same manner as in Example 1-1, except for changing the type of film and the plasma treatment conditions. Table 2 summarizes the manufacturing conditions of each processed circuit board, the wetting tension and the peeling strength of the thin film layer.

[表2] [Table 2]

另,例2-3(比較例)中,係將2片電路基板1以各自之電漿處理面相對向的方式配置,其間插入堆疊接著劑片1,並將熱壓製處理條件設為溫度280℃、壓力4MPa、時間30分進行壓製處理後,其界面之剝離強度為低於0.2N/cm。咸認蓋因壓製處理時溫度為280℃而接著層已熱分解之故。 另,於例2中,係未於TFE系聚合物層表面設置導體電路而進行評價,惟在TFE系聚合物層表面設有導體電路的情形時仍獲得相同結果。In addition, in Example 2-3 (comparative example), two circuit boards 1 are arranged in such a way that their respective plasma-treated surfaces face each other, and a stacked adhesive sheet 1 is inserted between them, and the hot-pressing treatment conditions are set at a temperature of 280° C., a pressure of 4 MPa, and a pressing time of 30 minutes. After the pressing treatment, the peel strength of the interface is lower than 0.2 N/cm. It is believed that the cover is thermally decomposed due to the temperature of 280°C during the pressing process. In addition, in Example 2, the evaluation was performed without providing a conductive circuit on the surface of the TFE-based polymer layer, but the same result was obtained when the conductive circuit was provided on the surface of the TFE-based polymer layer.

[例3]處理電路基板的製造例及評價例(其2) 依序堆積銅箔、薄膜F1、薄膜PI、薄膜F1、銅箔,並以真空下、320℃、30分鐘的條件進行熱壓製而獲得覆金屬積層板。 將覆金屬積層板之單面遮蔽,浸漬於蝕刻液(Sunhayato公司製、H-1000A、氯化鐵水溶液)中,由單面銅箔形成導體電路。 在氣體壓力20Pa之二氧化碳氣體環境下於電極間施加110kHz之高頻電壓,並在放電電力300W、60秒鐘之條件下對導體電路側(薄膜F1層之暴露面)進行電漿處理,而獲得具有電漿處理面之電路基板11。[Example 3] Production example and evaluation example of processed circuit board (Part 2) The copper foil, the film F1, the film PI, the film F1, and the copper foil were sequentially stacked, and hot-pressed under vacuum at 320° C. for 30 minutes to obtain a metal-clad laminate. One side of the metal-clad laminate was masked and immersed in an etching solution (manufactured by Sunhayato Co., Ltd., H-1000A, ferric chloride aqueous solution), and a conductor circuit was formed from the copper foil on one side. A high-frequency voltage of 110 kHz was applied between the electrodes in a carbon dioxide gas environment with a gas pressure of 20 Pa, and a plasma treatment was performed on the conductive circuit side (the exposed surface of the F1 layer of the film) under the condition of a discharge power of 300 W for 60 seconds to obtain a circuit substrate 11 with a plasma-treated surface.

以使2片電路基板11各自之電漿處理面相對向之方式配置,在其間插入堆疊接著劑片11,並利用真空壓製進行熱壓製處理(溫度160℃、壓力4MPa、熱壓合90分鐘)而熱壓合,從而獲得隔著接著劑片11之硬化物而接著有2片電路基板11的處理電路基板11。測定薄膜F1與硬化後接著層之界面的剝離強度,結果為9N/cm。 另,使用丁二烯改質環氧樹脂橡膠、苯乙烯系彈性體改質環氧樹脂、胺甲酸乙酯改質環氧樹脂或丙烯醯基改質環氧樹脂來替換丙烯腈丁二烯改質環氧樹脂時,仍獲得相同結果。The plasma-treated surfaces of the two circuit boards 11 were arranged to face each other, and the stacked adhesive sheets 11 were inserted therebetween, and heat-pressed by vacuum pressing (temperature 160° C., pressure 4 MPa, heat-compression bonding for 90 minutes) to obtain a processed circuit board 11 in which two circuit boards 11 were bonded via the cured product of the adhesive sheet 11. The peel strength of the interface between the film F1 and the cured adhesive layer was measured and found to be 9 N/cm. Also, when the acrylonitrile-butadiene-modified epoxy resin was replaced with butadiene-modified epoxy resin rubber, styrene-based elastomer-modified epoxy resin, urethane-modified epoxy resin, or acryl-based modified epoxy resin, the same results were obtained.

產業上之可利用性 由本發明之製造方法所獲得之處理電路基板,作為多層電路基板、附覆蓋薄膜之電路基板等係有利於作為要求小型化、高機能化的電子機器、電性機器之電路基板。本發明之接著性薄膜,有利於作為在多層電路基板、附覆蓋薄膜之電路基板等之製造上所用之覆蓋薄膜、層間絕緣薄膜等。Industrial availability The processed circuit substrate obtained by the manufacturing method of the present invention is advantageous as a circuit substrate for electronic devices and electrical devices requiring miniaturization and high performance as multilayer circuit substrates and circuit substrates with cover films. The adhesive film of the present invention is advantageous as a cover film, interlayer insulating film, etc. used in the manufacture of multilayer circuit boards, circuit boards with cover films, and the like.

另,在此係援引已於2017年12月19日提申之日本專利申請案2017-243191號及已於2018年1月18日提申之日本專利申請案2018-006324號之說明書、申請專利範圍、圖式及摘要之全部內容並納入作為本發明說明書之揭示。In addition, the Japanese patent application No. 2017-243191 filed on December 19, 2017 and the Japanese patent application No. 2018-006324 filed on January 18, 2018 are cited here, and all contents of the specification, scope of claims, drawings and abstracts are incorporated as the disclosure of the specification of the present invention.

1、2、3‧‧‧多層電路基板 10‧‧‧耐熱性基材層 12‧‧‧F層 14‧‧‧導體電路 16、16A、16B‧‧‧接著層 18‧‧‧覆蓋層 20、30‧‧‧電路基板 22‧‧‧附接著劑層之覆蓋薄膜 24‧‧‧接著劑片 26‧‧‧接著劑層 1'、2'、3'‧‧‧附覆蓋薄膜之電路基板 4'、5'‧‧‧附覆蓋薄膜之多層電路基板 10'、11'‧‧‧接著薄膜 10''、11''‧‧‧硬化後之接著薄膜 12'‧‧‧F薄膜 14'‧‧‧熱硬化性接著劑層 14''‧‧‧熱硬化性接著劑層 20'‧‧‧絕緣層 22'‧‧‧導體電路 24'‧‧‧接著劑片 30'、32'‧‧‧電路基板1, 2, 3‧‧‧Multilayer circuit board 10‧‧‧Heat-resistant substrate layer 12‧‧‧F floor 14‧‧‧conductor circuit 16, 16A, 16B‧‧‧adhesion layer 18‧‧‧Covering layer 20, 30‧‧‧circuit board 22‧‧‧Cover film with adhesive layer attached 24‧‧‧adhesive tablets 26‧‧‧adhesive layer 1', 2', 3'‧‧‧circuit substrate with cover film 4', 5'‧‧‧Multilayer circuit board with cover film 10', 11'‧‧‧Film Bonding 10'', 11''‧‧‧adhesive film after hardening 12'‧‧‧F film 14'‧‧‧thermosetting adhesive layer 14''‧‧‧thermosetting adhesive layer 20'‧‧‧Insulation layer 22'‧‧‧conductor circuit 24'‧‧‧adhesive tablet 30', 32'‧‧‧circuit board

圖1為表示多層電路基板之一例的剖面圖。 圖2為表示多層電路基板之另一例的剖面圖。 圖3為表示多層電路基板之另一例的剖面圖。 圖4為表示製造圖1之多層電路基板之樣貌的剖面圖。 圖5為表示製造圖2之多層電路基板之樣貌的剖面圖。 圖6為表示製造圖3之多層電路基板之樣貌的剖面圖。 圖7為表示以接著薄膜作為覆蓋薄膜之一例的剖面圖。FIG. 1 is a cross-sectional view showing an example of a multilayer circuit board. Fig. 2 is a cross-sectional view showing another example of a multilayer circuit board. Fig. 3 is a cross-sectional view showing another example of a multilayer circuit board. Fig. 4 is a cross-sectional view showing the state of manufacturing the multilayer circuit board of Fig. 1 . Fig. 5 is a cross-sectional view showing the state of manufacturing the multilayer circuit board of Fig. 2 . Fig. 6 is a cross-sectional view showing the state of manufacturing the multilayer circuit board of Fig. 3 . Fig. 7 is a cross-sectional view showing an example of an adhesive film as a cover film.

圖8為表示以接著薄膜作為層間絕緣薄膜之一例的剖面圖。 圖9為表示附覆蓋薄膜之電路基板之一例的剖面圖。 圖10為表示附覆蓋薄膜之電路基板之另一例的剖面圖。 圖11為表示附覆蓋薄膜之電路基板之另一例的剖面圖。 圖12為表示附覆蓋薄膜之多層電路基板之一例的剖面圖。 圖13為表示附覆蓋薄膜之多層電路基板之另一例的剖面圖。 圖14為表示製造圖9之電路基板之樣貌的剖面圖。Fig. 8 is a cross-sectional view showing an example of an adhesive film as an interlayer insulating film. Fig. 9 is a cross-sectional view showing an example of a circuit board with a cover film. Fig. 10 is a cross-sectional view showing another example of a circuit board with a cover film. Fig. 11 is a cross-sectional view showing another example of a circuit board with a cover film. Fig. 12 is a cross-sectional view showing an example of a multilayer circuit board with a cover film. Fig. 13 is a cross-sectional view showing another example of a multilayer circuit board with a cover film. Fig. 14 is a cross-sectional view showing how the circuit board of Fig. 9 is manufactured.

圖15為表示製造圖10之電路基板之樣貌的剖面圖。 圖16為表示製造圖11之電路基板之樣貌的剖面圖。 圖17為表示製造圖12之多層電路基板之樣貌的剖面圖。 圖18為表示製造圖13之多層電路基板之樣貌的剖面圖。Fig. 15 is a cross-sectional view showing how the circuit board of Fig. 10 is manufactured. Fig. 16 is a cross-sectional view showing how the circuit board of Fig. 11 is manufactured. Fig. 17 is a cross-sectional view showing the state of manufacturing the multilayer circuit board of Fig. 12 . Fig. 18 is a cross-sectional view showing the state of manufacturing the multilayer circuit board of Fig. 13 .

10‧‧‧耐熱性基材層 10‧‧‧Heat-resistant substrate layer

12‧‧‧F層 12‧‧‧F floor

14‧‧‧導體電路 14‧‧‧conductor circuit

18‧‧‧覆蓋層 18‧‧‧Covering layer

20‧‧‧電路基板 20‧‧‧circuit board

22‧‧‧附接著劑層之覆蓋薄膜 22‧‧‧Cover film with adhesive layer attached

26‧‧‧接著劑層 26‧‧‧adhesive layer

Claims (9)

一種處理電路基板之製造方法,其特徵在於:將具有聚合物層與導體電路之電路基板的導體電路側表面施行電漿處理,獲得具有已令前述聚合物層之暴露面的濕潤張力為30mN/m以上之電漿處理面的電路基板,隨後在低於260℃下使前述電路基板的電漿處理面與具接著劑層之基板的接著劑層進行熱壓合以製造處理電路基板,前述聚合物層包含四氟乙烯系聚合物,前述導體電路設於前述聚合物層表面且係將表面十點平均粗度(RzJIS)為2.0μm以下之金屬箔加工而形成者。 A method for manufacturing a processed circuit substrate, characterized in that: plasma treatment is performed on the conductive circuit side surface of the circuit substrate having a polymer layer and a conductive circuit to obtain a circuit substrate having a plasma-treated surface having a wetting tension of the exposed surface of the polymer layer of 30 mN/m or more, and then the plasma-treated surface of the circuit substrate is thermally bonded to the adhesive layer of the substrate with an adhesive layer at a temperature lower than 260° C. to manufacture a processed circuit substrate. And it is formed by processing a metal foil whose surface ten-point average roughness (Rz JIS ) is 2.0 μm or less. 如請求項1之製造方法,其中前述處理電路基板之熱壓合面的剝離強度為5N/cm以上。 The manufacturing method according to claim 1, wherein the peel strength of the thermocompression bonding surface of the aforementioned processed circuit substrate is 5 N/cm or more. 如請求項1或2之製造方法,其中前述具接著劑層之基板為附接著劑層之覆蓋薄膜,前述處理電路基板為附覆蓋薄膜之電路基板;或者,前述具接著劑層之基板為接著劑片,前述處理電路基板為附接著層之電路基板。 The manufacturing method according to claim 1 or 2, wherein the aforementioned substrate with an adhesive layer is a cover film with an adhesive layer attached, and the aforementioned processed circuit substrate is a circuit substrate with a covered film; or, the aforementioned substrate with an adhesive layer is an adhesive sheet, and the aforementioned processed circuit substrate is a circuit substrate with an adhesive layer attached. 如請求項1或2之製造方法,其中前述四氟乙烯系聚合物具有選自於由含羰基之基團、羥基、環氧基、醯胺基、胺基及異氰酸酯基所構成群組中之至少1種官能基。 The production method according to claim 1 or 2, wherein the tetrafluoroethylene-based polymer has at least one functional group selected from the group consisting of carbonyl-containing groups, hydroxyl groups, epoxy groups, amido groups, amine groups, and isocyanate groups. 如請求項1或2之製造方法,其中前述四氟乙烯系聚合物的熔點為260℃以上。 The production method according to claim 1 or 2, wherein the melting point of the aforementioned tetrafluoroethylene-based polymer is 260° C. or higher. 如請求項1或2之製造方法,其中前述接著劑層為含橡膠改質環氧樹脂及硬化劑的熱硬化性接著劑 層。 The manufacturing method according to claim 1 or 2, wherein the aforementioned adhesive layer is a thermosetting adhesive containing a rubber-modified epoxy resin and a hardener layer. 如請求項1或2之製造方法,其中前述具接著劑層之基板為如下所述之基板:在壓製溫度160℃、壓製壓力4MPa且壓製時間90分鐘之條件下使前述電路基板的電漿處理面與前述具接著劑層之基板的接著劑層進行熱壓合後,前述處理電路基板之熱壓合面的剝離強度為5N/cm以上。 The manufacturing method according to claim 1 or 2, wherein the aforementioned substrate with an adhesive layer is a substrate as follows: after the plasma-treated surface of the aforementioned circuit substrate and the adhesive layer of the aforementioned substrate with an adhesive layer are thermally bonded under the conditions of a pressing temperature of 160° C., a pressing pressure of 4 MPa, and a pressing time of 90 minutes, the peel strength of the thermally-pressed surface of the aforementioned treated circuit substrate is 5 N/cm or more. 一種多層電路基板之製造方法,其特徵在於:將具有聚合物層與導體電路之電路基板的導體電路側表面施行電漿處理,獲得具有已令前述聚合物層之暴露面的濕潤張力為30mN/m以上之電漿處理面的電路基板,隨後使多數前述具電漿處理面之電路基板的電漿處理面各自相對並於各電漿處理面間配置接著劑片,使其在低於260℃下進行熱壓合以製造具多數層導體電路的多層電路基板,前述聚合物層包含四氟乙烯系聚合物,前述導體電路設於前述聚合物層表面且係將表面十點平均粗度(RzJIS)為2.0μm以下之金屬箔加工而形成者。 A method for manufacturing a multi-layer circuit board, characterized in that: plasma treatment is performed on the conductor circuit side surface of the circuit board having a polymer layer and a conductor circuit to obtain a circuit board having a plasma-treated surface with a wetting tension of the exposed surface of the polymer layer above 30 mN/m, and then the plasma-treated surfaces of the plurality of circuit boards with plasma-treated surfaces face each other and an adhesive sheet is placed between each plasma-treated surface, and thermal compression bonding is performed at a temperature lower than 260° C. to manufacture a multi-layer circuit board with multiple layers of conductor circuits. The polymer layer comprises a tetrafluoroethylene polymer, and the conductor circuit is set on the surface of the polymer layer and the surface ten-point average roughness (RzJIS) is formed by processing a metal foil of 2.0 μm or less. 一種附覆蓋薄膜之電路基板之製造方法,其特徵在於:將具有聚合物層與導體電路之電路基板的導體電路側表面施行電漿處理,獲得具有已令前述聚合物層之暴露面的濕潤張力為30mN/m以上之電漿處理面的電路基板,隨後在低於260℃下使該電路基板之電漿處理面與附接著劑層之覆蓋薄膜的接著劑層進行熱壓合以製造附覆蓋薄膜之電路基板,前述聚合物層包含四氟乙烯系聚合 物,前述導體電路設於前述聚合物層表面係將表面十點平均粗度(RzJIS)為2.0μm以下之金屬箔加工而形成者。 A method for manufacturing a circuit substrate with a cover film, characterized in that: plasma treatment is performed on the conductor circuit side surface of the circuit substrate having a polymer layer and a conductor circuit to obtain a circuit substrate having a plasma-treated surface whose wetting tension on the exposed surface of the polymer layer is 30 mN/m or more, and then the plasma-treated surface of the circuit substrate is thermally bonded to the adhesive layer of the cover film with an adhesive layer below 260°C to produce a circuit substrate with a cover film. The above-mentioned conductive circuit is set on the surface of the above-mentioned polymer layer, and the surface ten-point average roughness (RzJIS) is formed by processing a metal foil of 2.0 μm or less.
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