TWI805954B - Applying tumor treating fields (ttfields) via electrodes embedded into skull implants - Google Patents
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本發明係關於用於藉由透過嵌入顱骨植入物中之電極來應用腫瘤治療電場(TTFields)以治療人頭部內之腫瘤的裝置和方法。 The present invention relates to devices and methods for treating tumors in the human head by applying Tumor Treating Electric Fields (TTFields) through electrodes embedded in skull implants.
相關申請案之交叉參考 Cross References to Related Applications
本申請案主張在2019年7月31日申請之美國臨時申請案62/880,893之權益,其以全文引用之方式併入本文中。 This application claims the benefit of U.S. Provisional Application 62/880,893, filed July 31, 2019, which is hereby incorporated by reference in its entirety.
腫瘤治療電場或TTField係中頻範圍(例如,100至500kHz)內抑制癌細胞生長之低強度交流電場(例如,1至3V/cm)。此非侵襲性治療以實體腫瘤為目標且描述於美國專利7,565,205中,該專利以全文引用之方式併入本文中。200KHz TTField經FDA批准用於治療神經膠母細胞瘤(GBM),且可例如經由OptuneTM系統遞送。OptuneTM包括置放於患者剃光頭上之一場產生器及兩對換能器陣列(亦即,電極陣列)。一對陣列定位於腫瘤之左側及右側,且另一對陣列定位於腫瘤之前部及後部。 Tumor Therapeutic Fields or TTFields are low intensity AC electric fields (eg, 1 to 3 V/cm) in the mid-frequency range (eg, 100 to 500 kHz) that inhibit cancer cell growth. This non-invasive treatment targets solid tumors and is described in US Patent 7,565,205, which is incorporated herein by reference in its entirety. The 200KHz TTField is FDA-approved for the treatment of glioblastoma (GBM), and can be delivered, for example, via the Optune ™ system. Optune ™ includes a field generator and two pairs of transducer arrays (ie, electrode arrays) placed on the patient's shaved head. One pair of arrays was positioned on the left and right side of the tumor, and the other pair was positioned on the front and back of the tumor.
本發明之一個態樣係關於一第一設備。該第一設備包含一剛性基板,該剛性基板經塑形且經設定尺寸以置換一顱骨之一區段。該基板具有內側及外側。該第一設備亦包含具有內側及外側之一導電板。該板之外側貼附至該基板之內側。該第一設備亦包含安置於該板之內側上之介電層;及具有內端及外端之一導電引線。該引線之內端經安置成與該板電接觸,該引線穿過該基板,且該引線之外端經配置以接受來自外部裝置之電信號。 One aspect of the invention relates to a first device. The first device includes a rigid base plate shaped and dimensioned to replace a segment of a skull. The substrate has an inner side and an outer side. The first device also includes a conductive plate having an inner side and an outer side. The outside of the board is attached to the inside of the substrate. The first device also includes a dielectric layer disposed on the inner side of the board; and a conductive lead having an inner end and an outer end. The inner end of the lead is disposed in electrical contact with the board, the lead passes through the substrate, and the outer end of the lead is configured to receive an electrical signal from an external device.
第一設備之一些具體實例進一步包含鄰近於介電層定位之溫度感測器。視需要,此等具體實例可進一步包含穿過基板且在溫度感測器處終止之至少一根電線,其中該電線經配置以將來自溫度感測器之電信號傳輸至外部裝置。視需要,在此等具體實例中,該溫度感測器包含一熱敏電阻。 Some embodiments of the first apparatus further include a temperature sensor positioned adjacent to the dielectric layer. Optionally, such embodiments can further include at least one wire passing through the substrate and terminating at the temperature sensor, wherein the wire is configured to transmit electrical signals from the temperature sensor to an external device. Optionally, in these embodiments, the temperature sensor includes a thermistor.
在第一設備之一些具體實例中,介電層包含具有至少10,000之介電常數的陶瓷層。在第一設備之一些具體實例中,介電層包含高介電聚合物之可撓性薄層。 In some embodiments of the first device, the dielectric layer includes a ceramic layer having a dielectric constant of at least 10,000. In some embodiments of the first device, the dielectric layer comprises a thin flexible layer of a high dielectric polymer.
本發明之另一態樣係關於一第二設備。該第二設備包含一剛性基板,該剛性基板經塑形且經設定尺寸以置換一顱骨之一區段。該基板具有內側及外側。該第二設備亦包含複數個導電板,各導電板具有內側及外側。各板之外側貼附至基板之內側。該第二設備亦包含安置於各板之內側上之介電層;及具有內端及外端之第一導電引線。該第一引線之內端經安置成與該等板中之第一者電接觸,該第一引線穿過基板,且該第一引線之外端經配置以接受來自外部裝置之電信號。 Another aspect of the invention relates to a second device. The second device includes a rigid base plate shaped and dimensioned to replace a segment of a skull. The substrate has an inner side and an outer side. The second device also includes a plurality of conductive plates, each conductive plate having an inner side and an outer side. The outside of each board is attached to the inside of the substrate. The second apparatus also includes a dielectric layer disposed on the inner side of each board; and a first conductive lead having an inner end and an outer end. The inner end of the first lead is arranged to be in electrical contact with the first of the boards, the first lead passes through the substrate, and the outer end of the first lead is configured to receive an electrical signal from an external device.
該第二設備之一些具體實例進一步包含具有內端及外端之第二導電引線。該第二引線之內端經安置成與該等板中之第二者電接觸,該第二引線穿過基板,且該第二引線之外端經配置以接受來自外部裝置之電信號。 Some embodiments of the second apparatus further include a second conductive lead having an inner end and an outer end. The inner end of the second lead is arranged to be in electrical contact with the second of the boards, the second lead passes through the substrate, and the outer end of the second lead is configured to receive an electrical signal from an external device.
第二設備之一些具體實例進一步包含額外導電引線,該額外導電引線經安置成將該等板中之第一者與該等板中之第二者電連接。 Some embodiments of the second apparatus further include additional conductive leads disposed to electrically connect the first of the plates with the second of the plates.
第二設備之一些具體實例進一步包含鄰近於介電層定位之溫度感測器。視需要,此等具體實例可進一步包含穿過基板且在溫度感測器處終止之至少一根電線,其中該電線經配置以將來自溫度感測器之電信號傳輸至外部裝置。視需要,在此等具體實例中,該溫度感測器包含一熱敏電阻。 Some embodiments of the second apparatus further include a temperature sensor positioned adjacent to the dielectric layer. Optionally, such embodiments can further include at least one wire passing through the substrate and terminating at the temperature sensor, wherein the wire is configured to transmit electrical signals from the temperature sensor to an external device. Optionally, in these embodiments, the temperature sensor includes a thermistor.
在第二設備之一些具體實例中,介電層包含具有至少10,000之介電常數的陶瓷層。在第二設備之一些具體實例中,介電層包含高介電聚合物之可撓性薄層。 In some embodiments of the second device, the dielectric layer includes a ceramic layer having a dielectric constant of at least 10,000. In some embodiments of the second device, the dielectric layer comprises a thin flexible layer of high dielectric polymer.
本發明之另一態樣係關於治療人頭部中之腫瘤的第一方法。第一方法包含將第一組電極定位於腫瘤之第一側上之第一顱骨植入物的內側上;將第二組電極定位於腫瘤之與第一側相對之第二側上;及在第一組電極與第二組電極之間施加AC電壓以產生穿過腫瘤的交流電場。 Another aspect of the invention relates to a first method of treating tumors in the human head. The first method comprises positioning a first set of electrodes on the inside of the first cranial implant on a first side of the tumor; positioning a second set of electrodes on a second side of the tumor opposite the first side; and An AC voltage is applied between the first set of electrodes and the second set of electrodes to generate an alternating electric field across the tumor.
在第一方法之一些情況下,第二組電極定位於第一顱骨植入物之內側上。在第一方法之一些情況下,第二組電極定位於第二顱骨植入物之內側上。在第一方法之一些情況下,第二組電極定位於人頭部之外表面上。 In some cases of the first method, the second set of electrodes is positioned on the inside of the first cranial implant. In some cases of the first method, the second set of electrodes is positioned on the inside of the second cranial implant. In some cases of the first method, the second set of electrodes is positioned on an outer surface of the human head.
10A:植入物 10A: Implants
10L:植入物 10L: Implant
10P:植入物 10P: Implant
10R:植入物 10R: Implants
10:植入物 10: Implants
10’:植入物 10': Implant
10”:植入物 10": Implants
11:AC場產生器 11: AC field generator
15:顱骨 15: skull
20:基板 20: Substrate
22:導電板 22: Conductive plate
24:介電層 24: Dielectric layer
26:引線 26: Lead
32:導電板 32: Conductive plate
34:介電層 34: Dielectric layer
36:引線 36: Lead
37:內部佈線 37: Internal wiring
[圖1]描繪將換能器陣列併入至四個顱骨植入物中之具體實例。 [ FIG. 1 ] Depicts a specific example of the incorporation of transducer arrays into four skull implants.
[圖2]描繪用於實施圖1中所描繪之顱骨植入物中之任一者的第一具體實例。 [ FIG. 2 ] Depicts a first embodiment for implementing any of the cranial implants depicted in FIG. 1 .
[圖3]描繪用於實施圖1中所描繪之顱骨植入物中之任一者的第二具體實例。 [ Fig. 3 ] Depicts a second embodiment for implementing any of the cranial implants depicted in Fig. 1 .
[圖4]描繪用於實施圖1中所描繪之顱骨植入物中之任一者的第 三具體實例。 [Fig. 4] depicts the first method for implementing any one of the cranial implants depicted in Fig. 1 Three specific examples.
在下文參看隨附圖式詳細地描述各種具體實例,其中相同參考數字表示相同元件。 Various specific examples are described in detail below with reference to the accompanying drawings, wherein like reference numerals refer to like elements.
在患有神經膠母細胞瘤之患者中,當OptuneTM換能器陣列定位於患者剃光頭上時,電場必須穿過患者之頭皮及顱骨兩次以便到達腫瘤。此情形引入兩個問題。首先,換能器陣列與腫瘤之間的顱骨之存在使得更難以將場對準大腦中之所需位置(亦即,腫瘤床)。且其次,歸因於由顱骨及頭皮引入之電場的衰減,施加至換能器陣列之電壓及電流必須相對較高(例如,約50VAC及約1A)以便在腫瘤床中獲得具有治療上有效量值之電場。 In a patient with glioblastoma, when the Optune ™ transducer array is positioned on the patient's shaved head, the electric field must travel twice through the patient's scalp and skull in order to reach the tumor. This situation introduces two problems. First, the presence of the skull between the transducer array and the tumor makes it more difficult to aim the field at the desired location in the brain (ie, the tumor bed). And second, due to the attenuation of the electric field introduced by the skull and scalp, the voltage and current applied to the transducer array must be relatively high (e.g., about 50 VAC and about 1 A) in order to obtain a therapeutically effective dose in the tumor bed. value of the electric field.
圖1描繪藉由將換能器陣列併入至一或多個顱骨植入物中來改良此等問題之具體實例。在所說明之具體實例中,顱骨植入物10L及10R分別定位於患者顱骨15之左側及右側上;且顱骨植入物10A及10P分別定位於患者顱骨15之前側及後側上。AC場產生器11(a)在顱骨植入物10A中之電極與顱骨植入物10P中之電極之間施加AC電壓持續第一時間間隔(例如,1秒);接著(b)在顱骨植入物10L中之電極與顱骨植入物10R中之電極之間施加AC電壓持續第二時間間隔(例如,1秒);接著在治療持續時間內重複兩步序列(a)及(b)。
Figure 1 depicts a specific example of ameliorating these problems by incorporating a transducer array into one or more cranial implants. In the illustrated example,
圖2描繪用於實施圖1中所描繪之顱骨植入物10A/10P/10L/10R中之任一者的第一具體實例。在此具體實例中,剛性基板20經塑形及設定尺寸以置換顱骨之一區段。基板20具有內側及外側,且可使用用於形成顱骨植入物(包括但不限於3D列印)之多種習知方法中之任一者而形成。在一些較佳具體實例中,基板20之面積係至少5cm2。
FIG. 2 depicts a first embodiment for implementing any of the
導電板22貼附至基板20之內側。此板22較佳為金屬(例如,銅、
鋼等),但亦可使用替代導電材料。板22之形狀可經定製以匹配基板20之輪廓,且板22的外側可使用包括但不限於3D列印及黏著劑的多種習知方法中之任一者貼附至基板20。介電層24安置於板22之內側上。
The
在許多情形下,較佳地將電場以電容方式耦合至目標區域中。導電板22及介電層24形成電容器,且使用較高電容改善電場至腫瘤中之耦合。用於實現高電容之一種方法係使用具有至少10,000之介電常數的陶瓷介電材料來實施介電層24,此類似於習知的OptuneTM系統中使用之方法。用於增加電容之替代方法係使用高介電聚合物之可撓性薄層作為介電層24。
In many cases it is preferable to capacitively couple the electric field into the target area. The
導電板22之未由介電質24覆蓋的任何部分應由適當絕緣體(例如,醫用級聚矽氧)覆蓋以防止導電板22與患者頭部中組織之間的非電容耦合。
Any portion of
導電引線26之內端(例如,電線)安置成與板22電接觸。引線26穿過基板20,且引線26之外端經配置以接受來自外部裝置(例如,圖1中所描繪的場產生器11)之電信號。此可例如藉由在引線26之外端處提供端子來實現。
The inner ends (eg, wires) of the conductive leads 26 are placed in electrical contact with the
舉例而言,假定圖2中所描繪之四組設備10定位於患者頭部之所有四側上(亦即,分別為左側、右側、前部及後部)。場產生器11在通向植入物10A及10P之電線上產生AC電壓,接著在通向植入物10L及10R之電線上產生AC電壓(如上文所描述,以重複及交替序列)。對應AC電流將行進穿過電線26,直至其到達植入物10A/10B/10L/10R中之各者中的導電板22。由於存在介電層24,所需電場將經由電容耦合施加至腫瘤床中。
For example, assume that the four sets of
較佳地,將至少一個溫度感測器(例如,熱敏電阻,圖中未示)整合至各植入物10A/10P/10L/10R中以降低患者腦部之任何部分過熱之風險。在一些具體實例中,適當佈線(圖中未示)穿過基板20且用以將信號自溫度感測器投送至系統之控制器(其可位於例如圖1中展示之場產生器11中)。在替代具體實例中,系統可經配置以使用多種習知方法中之任一者以無線方式與溫度感
測器通信。
Preferably, at least one temperature sensor (eg, a thermistor, not shown) is integrated into each
圖3類似於圖2具體實例,除了以下情況以外:替代使用單個導電板22及單個介電層24(如在圖2具體實例中),使用複數個較小導電板32及較小介電層34。視需要,此等較小導電板32中之各者可為圓形的。視需要,較小介電層34中之各者可為安置於較小導電板32上之陶瓷塗層。
FIG. 3 is similar to the FIG. 2 embodiment, except that instead of using a single
在圖3具體實例中,單根引線36穿過基板20到達導電板32中之一者,且內部佈線37用於將電流投送至其他導電板。替代地,如圖4中所描繪,若導電板32中之各者具備其穿過基板20之自身引線36,則可省略內部佈線。
In the embodiment of FIG. 3, a
值得注意的係,由於電場不必穿過頭皮或顱骨,因此對於腫瘤處之任何給定所需場強度,用於此具體實例中之電壓及電流可顯著低於用於習知OptuneTM系統中之電壓及電流。(此係因為在習知的OptuneTM系統中,電極全部定位於患者之剃光頭皮上,此意謂電場必須橫穿頭皮及顱骨兩次以到達腫瘤。) It is worth noting that since the electric field does not have to pass through the scalp or skull, for any given desired field strength at the tumor, the voltage and current used in this particular example can be significantly lower than those used in the conventional Optune ™ system. voltage and current. (This is because in the conventional Optune ™ system, the electrodes are all positioned on the patient's shaved scalp, which means that the electric field has to traverse the scalp and skull twice to reach the tumor.)
此外,當換能器陣列併入至顱骨植入物中時,可簡化治療之規劃以使得所需場呈現在腫瘤床中,此係因為在腫瘤之相對側上的換能器陣列之間電路徑得以簡化。最後,將換能器陣列併入至顱骨植入物中可在手術傷口或皮膚異常之位置可能阻止將習知OptuneTM換能器陣列施加至患者皮膚表面上特定位置的情況下改善治療規劃。 Furthermore, when transducer arrays are incorporated into cranial implants, the planning of treatment can be simplified so that the desired field is presented in the tumor bed because electrical connections between the transducer arrays on opposite sides of the tumor Paths are simplified. Finally, incorporating transducer arrays into cranial implants can improve treatment planning where the location of surgical wounds or skin abnormalities may prevent the application of conventional Optune ™ transducer arrays to specific locations on the patient's skin surface.
應注意,圖1描繪所有電極併入至各別顱骨植入物10A/10P/10L/10R中。但在替代具體實例中,僅一些組電極併入至顱骨植入物中,且其餘組電極定位於患者之顱骨外部(如在使用OptuneTM之習知TTField治療中)。舉例而言,一組電極可定位於患者頭部之前側上的顱骨植入物10A中,且右側、左側及後側上之電極組可全部定位於患者之顱骨外部。
It should be noted that Figure 1 depicts the incorporation of all electrodes into respective
在其他替代具體實例中,將兩組或多於兩組電極併入至單個顱骨植入物中。舉例而言,單個大致半球形顱骨植入物可安裝在患者頭部上以代替 患者顱骨之上半球,且所有四組電極可併入至單個顱骨植入物中(亦即,在植入物之左側、右側、前部及後部內壁上)。 In other alternative embodiments, two or more sets of electrodes are incorporated into a single cranial implant. For example, a single generally hemispherical skull implant can be mounted on the patient's head in place of The upper hemisphere of the patient's skull, and all four sets of electrodes can be incorporated into a single cranial implant (ie, on the left, right, anterior, and posterior inner walls of the implant).
儘管已參考某些具體實例公開本發明,但對所描述具體實例之眾多修改、變更及改變在不脫離如在所附申請專利範圍中所界定之本發明之領域及範圍的情況下係可能的。因此,希望本發明不限於所描述之具體實例,而是其具有由以下申請專利範圍及其等效物之語言界定的完整範圍。 Although the invention has been disclosed with reference to certain specific examples, numerous modifications, changes and variations to the described specific examples are possible without departing from the field and scope of the invention as defined in the appended claims . Thus, it is intended that the invention not be limited to the particular examples described, but that it have its full scope as defined by the language of the following claims and their equivalents.
10A:植入物 10A: Implants
10L:植入物 10L: Implant
10P:植入物 10P: Implant
10R:植入物 10R: Implants
11:AC場產生器 11: AC field generator
15:顱骨 15: skull
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1976738B (en) * | 2004-04-23 | 2010-09-01 | 诺沃库勒有限公司 | Treating a tumor or the like with an electric field |
CN108348761A (en) * | 2015-10-28 | 2018-07-31 | 兹夫·波姆森 | TTFIELD treatments with the electrode position optimization on head based on MRI base conductivity measurement results |
CN110038219A (en) * | 2019-04-18 | 2019-07-23 | 马冲 | A kind of apparats for treating tumor |
CN110234394A (en) * | 2016-12-13 | 2019-09-13 | 兹夫·波姆森 | Patient is treated using the TTField with the electrode position optimized with deformable template |
CN110337312A (en) * | 2017-02-28 | 2019-10-15 | 博医来股份公司 | The selection and placement of best deep brain stimulation electrode based on stimulus field modeling |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1976738B (en) * | 2004-04-23 | 2010-09-01 | 诺沃库勒有限公司 | Treating a tumor or the like with an electric field |
CN108348761A (en) * | 2015-10-28 | 2018-07-31 | 兹夫·波姆森 | TTFIELD treatments with the electrode position optimization on head based on MRI base conductivity measurement results |
CN110234394A (en) * | 2016-12-13 | 2019-09-13 | 兹夫·波姆森 | Patient is treated using the TTField with the electrode position optimized with deformable template |
CN110337312A (en) * | 2017-02-28 | 2019-10-15 | 博医来股份公司 | The selection and placement of best deep brain stimulation electrode based on stimulus field modeling |
CN110038219A (en) * | 2019-04-18 | 2019-07-23 | 马冲 | A kind of apparats for treating tumor |
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