TWI805865B - Stripper composition for removing photoresists and method for stripping photoresists using the same - Google Patents

Abstract

The present disclosure relates to a stripper composition for removing photoresists which is capable of inhibiting corrosion of a lower metal film during the stripping process and of effectively removing oxides while exhibiting excellent stripping ability for the photoresist, and to a method for stripping photoresists using the same.

Description

Stripper composition for removing photoresist and stripping using same The method of photoresist

The present disclosure relates to a stripper composition for removing photoresist and a method for stripping photoresist using the same. More specifically, the present disclosure relates to a stripper composition for removing photoresist capable of suppressing Erosion of the underlying metal film during the lift-off process, and can effectively remove oxide while exhibiting excellent lift-off capability for photoresist.

[CROSS-REFERENCE TO RELATED APPLICATIONS]

This application claims the rights and interests of the Korean Patent Application No. 10-2019-0033204 filed with the Korea Intellectual Property Office on March 22, 2019, the disclosure of which is incorporated herein by reference in its entirety.

The manufacturing process of the microcircuit or semiconductor integrated circuit of the liquid crystal display device includes the following steps: forming various lower films on the substrate, such as aluminum, aluminum alloy A conductive metal film made of gold, copper, copper alloy, molybdenum or molybdenum alloy or an insulating film such as a silicon oxide film, a silicon nitride film, or an acryl-based insulating film; a photoresist is uniformly applied on the lower film; optionally exposing and developing the applied photoresist to form a photoresist pattern; and using the photoresist pattern as a mask to pattern the lower film. After the patterning step, a process of removing the photoresist remaining on the lower film is performed. For this purpose, a stripper composition for removing photoresist is used.

Heretofore, stripper compositions including amine compounds, polar protic solvents, polar aprotic solvents, etc. have been known and widely used. These stripper compositions are known to exhibit a certain degree of removal and stripping ability for photoresists.

However, these conventional stripper compositions promote the decomposition of amine compounds over time when stripping a large amount of photoresist, and thus have a problem that stripping and rinsing capabilities decrease over time. Specifically, depending on the number of uses of the stripper composition, these problems may be further accelerated if some of the residual photoresist dissolves in the stripper composition.

In addition, when a copper metal film is used as the lower film, stains and foreign matter are generated due to corrosion in the lift-off process, which makes it difficult to use the lower film. In addition, there are limitations such as inability to efficiently remove oxides of copper.

The present disclosure aims to provide a stripper composition for removing photoresist, which can inhibit the underlying gold Etch of metal film, and can effectively remove oxide while exhibiting excellent stripping ability for photoresist.

The present disclosure aims to provide a method for stripping photoresist using a stripper composition for removing photoresist.

In the present disclosure, a stripper composition for removing photoresist is provided, and the stripper composition for removing photoresist includes: an amide compound having a straight chain or Branched chain alkyl substituted with 1 or 2 nitrogen atoms; amine compounds; polar organic solvents; methimazole; and triazole-based compounds.

In the present disclosure, there is also provided a method of stripping a photoresist, the method including the steps of: forming a photoresist pattern on a substrate in which a lower film is formed; patterning the lower film with the photoresist pattern; The photoresist stripper composition strips the photoresist.

Hereinafter, a stripper composition for removing photoresist and a method for stripping photoresist using the stripper composition according to specific embodiments of the present invention will be described in detail.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular forms are intended to include plural forms as well. It will be further understood that when the terms "comprise", "have" and "have" are used in this specification, they designate the presence of stated features, numbers, steps, components or combinations thereof, but do not exclude one or more other features, The presence or addition of numbers, steps, components or combinations thereof.

Since the invention is susceptible to various modifications and forms, specific embodiments of the invention are shown by way of example and will be described in detail. However, the present invention is not intended to limit the present invention to the specific forms disclosed, and it should be understood that the present invention includes all modifications, equivalent forms and replacements within the concept and technical scope of the present invention.

According to an embodiment of the present disclosure, there is provided a stripper composition for removing photoresist, the stripper composition for removing photoresist includes: an amide compound, wherein a compound having 1 to 5 carbon atoms Straight chain or branched chain alkyl substituted by 1 or 2 nitrogen atoms; amine compounds; polar organic solvents; methimazole; and triazole compounds.

The present inventors conducted research on a stripper composition for removing photoresist, and found through experiments that the stripper composition for removing photoresist including the above-mentioned components can inhibit the lower metal during the stripping process. The etching of the film, and effectively removes the oxide while having excellent stripping ability to the photoresist, thereby completing the present invention.

As the number of high-resolution display models increases, copper wiring having low resistance is used as a metal of a thin film transistor (TFT). Here, the copper wiring uses molybdenum (Mo) as the lower film of the barrier metal, and has a structure in which molybdenum having a low oxidation-reduction potential corrodes. However, the stripper causes damage between copper and molybdenum during the stripping process, which is a process of removing the photoresist, thereby causing quality problems. Therefore, there is a need for improved corrosion inhibitors to prevent corrosion of strippers.

As described above, the stripper composition for removing photoresist of the embodiment includes an amide compound, an amine compound, and a polar organic solvent, to To maintain excellent stripping ability and effectively remove metal oxides, in the amide compound, a linear or branched alkyl group having 1 to 5 carbon atoms is substituted by 1 or 2 nitrogen atoms. In addition, methimazole and triazole compounds may be included to inhibit corrosion of the lower metal film.

Specifically, the stripper composition for removing photoresist of the embodiment includes methimazole and a triazole-based compound together to suppress the metal-containing lower film (such as a copper-containing film, Especially the corrosion of copper/molybdenum metal film). In addition, compared with the case of using one of methimazole and triazole-based compounds or using a conventionally known corrosion inhibitor, even with an equivalent amount or less, it is possible to more effectively inhibit the corrosion inhibitor containing Corrosion of the underlying metal film.

The synergism between methimazole and triazoles appears to be due to the inhibition of corrosion by linking the non-covalent electron pairs of the amine groups of the triazoles to the metal of the underlying film, such as copper. effect, and by linking the non-covalent electron pair of the thiol group of methimazole, which has a molecular weight lower than that of the triazole-based compound, to metals other than the above-mentioned metals (such as molybdenum (Mo)) to protect from the release agent Damaged effects caused by amines.

In addition, the stripper composition for removing photoresist of the embodiments includes methimazole and triazole compounds together, and thus can be rinsed in deionized water (DIW) immediately after the stripping process removed to increase the contact resistance between the metal-containing lower film and the substrate. For example, the contact resistance between the gate (Cu) and the pixel (PXL) (ITO) can be improved.

Herein, examples of triazole compounds are not particularly limited, but For example, the triazole compound may be selected from 2,2'-[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol (2,2'-[ [(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol), 4,5,6,7-tetrahydro-1H-benzotriazole (4,5,6,7-tetrahydro-1H-benzotriazole ), 1H-benzotriazole, 1H-1,2,3-triazole and at least one compound of the group consisting of methyl 1H-benzotriazole.

Based on the total composition, the content of methimazole can be 0.001% by weight (wt%) to 0.5% by weight, 0.001% by weight to 0.3% by weight, 0.001% by weight to 0.1% by weight, 0.005% by weight to 0.07% by weight or 0.01% by weight % by weight to 0.05% by weight. When the content of methimazole is less than 0.001% by weight based on the total composition, it may be difficult to effectively suppress corrosion of the lower film. In addition, based on the total composition, when the content of methimazole is greater than 0.5% by weight, a significant amount of corrosion inhibitors may be adsorbed and retained on the lower film, thereby reducing the copper-containing lower film (especially the copper/molybdenum metal film). ) electrical properties. In addition, the corrosion inhibitor may be adsorbed on the photoresist to form a protective film, and may not be decomposed by amine, so the peeling cannot be performed properly, and foreign matter may be generated, which may cause quality problems.

Meanwhile, compared with the case of using conventionally known corrosion inhibitors, methimazole can prevent the corrosion of the metal-containing lower film more efficiently even when using an equivalent amount or less, and when used in a specific amount This effect can be maximized when used together with the following triazole-based compounds.

Based on the total composition, the content of the triazole compound can be 0.01% by weight to 5.0% by weight, 0.02% by weight to 2.0% by weight, 0.05% by weight to 1.0% by weight, 0.07% by weight to 0.6% by weight or 0.1% by weight to 0.5% by weight. When the content of the triazole-based compound is less than 0.01% by weight based on the total composition, it may be difficult to effectively suppress corrosion of the lower film. In addition, based on the total composition, when the triazole compound content is greater than 5.0% by weight, a significant amount of corrosion inhibitors can be adsorbed and retained on the lower film, thereby reducing the copper-containing lower film (especially copper/molybdenum metal corrosion). film) electrical properties.

Meanwhile, compared with the case of using conventionally known corrosion inhibitors, the triazole-based compound can prevent the corrosion of the metal-containing lower film more efficiently even when using an equivalent amount or less, and when used in a specific This effect can be maximized when used in combination with the above-mentioned methimazole.

Meanwhile, the weight ratio of methimazole to the triazole compound may be 1:1 to 1:50, 1:1 to 1:40, 1:1.5 to 1:40 or 1:2 to 1:30. Since methimazole and the triazole-based compound have the specific weight ratio as described above, the ability to suppress the corrosion of the lower metal film formed by the stripper composition for removing photoresist can be maximized, and compared with the use of When one of methimazole and triazole-based compounds or one of methimazole and triazole-based compounds is used together with conventionally known corrosion inhibitors, the corrosion of the lower metal film can be more effectively inhibited .

In addition, the stripper composition for removing photoresist may include an amine compound. The amine compound can enable the stripping agent composition for removing the photoresist to have stripping ability on the photoresist, and specifically, can dissolve the photoresist to remove the photoresist.

Based on the total composition, the content of the amine compound may be about 0.1% to 10% by weight, 0.5% to 7% by weight, 1% to 5% by weight or 2% to 4.6% by weight. The release agent composition in the described embodiment can show in the above range While having excellent peeling ability, etc., it can reduce the economic inefficiency and efficiency degradation of the process caused by excessive amine, and can reduce the generation of waste liquid, etc. When the amine compound is contained in an excessive amount, this may lead to corrosion of the lower metal film (eg, copper-containing lower film), and it may be necessary to use a large amount of corrosion inhibitor to suppress the corrosion. In such cases, significant amounts of corrosion inhibitors may be adsorbed and retained on the lower film, thereby degrading the electrical properties of the copper-containing lower film.

Specifically, when the content of the amine compound is less than 0.1% by weight based on the total composition, the stripping ability of the stripper composition for removing photoresist may decrease. Based on the total composition, when the content is greater than 10% by weight, the economical inefficiency and efficiency degradation of the process may be reduced due to the excess amine compound.

Although a specific kind of the amine compound is not particularly limited, the amine compound may include a kind of cyclic amine compound having a weight average molecular weight of 95 grams/mole (g/mol) or more.

Examples of the cyclic amine compound are not particularly limited, but may be, for example, 1-imidazolidine ethanol, 4-imidazolidine ethanol, hydroxyethylpiperazine (HEP), aminoethylpiperazine, and the like.

Meanwhile, the amine compound may further include a chain amine compound with a weight average molecular weight of 95 g/mole or greater than 95 g/mole.

In addition to the stripping ability to photoresist, the chain amine compound having a weight average molecular weight of 95 g/mole or more can effectively remove natural oxidation on the lower film (such as a copper-containing film) film to further improve adhesion between films (eg, between a copper-containing film and an overlying insulating film such as a silicon nitride film).

Examples of chain amine compounds having a weight average molecular weight of 95 g/mol or more are not particularly limited, but may be, for example, (2-aminoethoxy)-1-ethanol ((2-aminoethoxy )-1-ethanol, AEE), aminoethylethanolamine (AEEA), methyldiethanolamine (MDEA), diethylenetriamine (DETA), diethanolamine (diethanolamine , DEA), diethylaminoethanol (diethylaminoethanol, DEAE), triethanolamine (triethanolamine, TEA), triethylene tetraamine (triethylene tetraamine, TETA) or a mixture of two or more thereof.

Meanwhile, based on 100 parts by weight of the amine compound, the total content of methimazole and triazole compounds may be 1 to 30 parts by weight, 2 to 25 parts by weight or 3 to 20 parts by weight.

As described above, the amine compound is a component in the stripper composition for removing the photoresist that exhibits stripping ability to the photoresist, and can dissolve the photoresist to remove the photoresist. In addition, methimazole and triazole-based compounds suppress corrosion of the lower metal film. When the total amount of methimazole and the triazole-based compound is less than 1 part by weight based on 100 parts by weight of the amine compound, it may be difficult to effectively suppress corrosion of the lower film. In addition, based on 100 parts by weight of the amine compound, when the total amount of methimazole and triazole-based compounds is greater than 30 parts by weight, a significant amount of corrosion inhibitors may be adsorbed and retained on the lower film, thereby reducing the copper-containing lower film. Electrical properties of films, especially copper/molybdenum metal films.

In addition, the stripper composition for removing photoresist may include amidation in which a linear or branched alkyl group having 1 to 5 carbon atoms is substituted with 1 or 2 nitrogen atoms. compound. An amide compound in which a linear or branched alkyl group having 1 to 5 carbon atoms is substituted with 1 or 2 nitrogen atoms can properly dissolve an amine compound and can enable a stripper composition for removing a photoresist Effectively penetrates the lower film, thereby improving the stripping and rinsing ability of the stripper composition.

Specifically, amide compounds in which a linear or branched chain alkyl group having 1 to 5 carbon atoms is substituted with 1 or 2 nitrogen atoms may include amide compounds in which a methyl group is substituted with 1 or 2 nitrogen atoms. An amide compound in which a methyl group is substituted with 1 or 2 nitrogen atoms may have a chemical structure represented by Chemical Formula 1 below.

In Chemical Formula 1, R ₁ is hydrogen, methyl, ethyl or propyl, each of R ₂ and R ₃ is hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, and R At least one of ₂ and R ₃ is methyl.

Examples of linear or branched alkyl groups having 1 to 5 carbon atoms are not limited. For example, methyl, ethyl, propyl, butyl, isobutyl, pentyl, etc. can be used.

Examples of amide compounds in which the methyl group is substituted with 1 or 2 nitrogen atoms are not limited. For example, a compound in Chemical Formula 1 in which R ₂ is methyl and R ₁ and R ₃ are hydrogen may be used.

Based on the total composition, straight or branched chains with 1 to 5 carbon atoms The content of the amide compound in which the alkyl group is substituted by 1 or 2 nitrogen atoms may be 10% by weight to 80% by weight, 15% by weight to 70% by weight, or 25% by weight to 60% by weight. The stripper composition for removing photoresist of the embodiment can exhibit excellent stripping ability and the like within the above range, and can maintain the stripping and rinsing ability for a long time.

In addition, the stripper composition for removing photoresist may include a polar organic solvent. The polar organic solvent may allow the stripper composition for removing photoresist to effectively penetrate the lower film, thereby contributing to the excellent stripping ability of the stripper composition. In addition, the stripper composition for removing photoresist can effectively remove stains on an underlying film (eg, a copper-containing film) to improve the rinsing ability of the stripper composition for removing photoresist.

The polar organic solvent may include alkylene glycol monoalkyl ether, pyrrolidone, sulfone, sulfoxide, or a mixture of two or more thereof. More specifically, the alkylene glycol monoalkyl ether may include diethylene glycol monomethyl ether (MDG), ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol Monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monoethyl ether (EDG), diethylene glycol monopropyl ether, diethylene glycol monobutyl ether Ether (diethylene glycol monobutyl ether, BDG), dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol Alcohol Monoethyl Ether, Triethylene Glycol Monopropyl Ether, Triethylene Glycol Monobutyl Ether, Tripropylene Glycol Monomethyl Ether, Tripropylene Glycol Monoethyl Ether, Tripropylene Glycol Monopropyl Ether, Tripropylene Glycol Monobutyl Ether ether or a mixture of two or more of them.

In addition, alkylene glycol monoalkyl ethers may use diethylene glycol monomethyl ether ( MDG), diethylene glycol monoethyl ether (EDG), diethylene glycol monobutyl ether (BDG), etc.

Examples of pyrrolidone are not particularly limited, but for example, N-methylpyrrolidone, pyrrolidone, N-ethylpyrrolidone, and the like can be used. Examples of thorium are not particularly limited, but for example, cyclobutane can be used. Examples of sulfoxide are not particularly limited, but for example, dimethylsulfoxide (DMSO), diethylsulfoxide, dipropylsulfoxide, etc. can be used.

Based on the total composition, the content of the polar organic solvent may be 10 wt % to 80 wt %, 20 wt % to 78 wt % or 40 wt % to 70 wt %. The stripper composition for removing photoresist of the embodiment can exhibit excellent stripping ability and the like within the above range, and can maintain the stripping and rinsing ability for a long time.

Meanwhile, the stripper composition for removing photoresist may further include a silicone-based nonionic surfactant. The silicone-based nonionic surfactant can be stable without causing chemical change, denaturation, or decomposition even in a highly alkaline release agent composition including an amine compound. In addition, silicone-based nonionic surfactants can exhibit excellent compatibility with the aforementioned polar aprotic solvents or protic organic solvents. Therefore, silicone-based non-ionic surfactants can be mixed with other components to reduce the surface tension of the stripper composition, and have good performance on the photoresist and its underlying film to be removed by the stripper composition. for better wettability. Therefore, the example The release agent composition including the silicone-based nonionic surfactant can exhibit excellent peeling ability, and can also exhibit excellent rinsing ability with respect to the lower film, so even after the release agent composition is treated, Stains and foreign matter are also rarely generated and remain on the lower film, and the stains and foreign matter can be effectively removed.

In addition, the silicone-based nonionic surfactant can exhibit the above effects even at a very low content, and by-products due to its denaturation or decomposition can be minimized.

Specifically, the silicone-based nonionic surfactant may include polysiloxane-based polymers. Examples of polysiloxane-based polymers are not particularly limited, but for example, polyether-modified acrylic-functional polydimethylsiloxane, polyether-modified siloxane, polyether-modified polydimethylsiloxane, Polysiloxane, polyethylalkylsiloxane, aralkyl-modified polymethylalkylsiloxane, polyether-modified hydroxyl-functional polydimethylsiloxane, polyether-modified dimethylpolysiloxane Silicone, modified acrylic functional polydimethylsiloxane, or a mixture of two or more thereof.

Based on the total composition, the content of the silicone-based nonionic surfactant may be 0.0005% to 0.1% by weight, 0.001% to 0.09% by weight, or 0.001% to 0.01% by weight. Based on the total composition, when the content of the silicone-based nonionic surfactant is less than 0.0005% by weight, it may not be sufficient to effectively improve the stripping and rinsing capabilities of the stripping agent composition. In addition, when the content of the silicone-based nonionic surfactant is more than 0.1% by weight based on the total composition, air bubbles are generated under high pressure during the peeling process using the peeling agent composition, thus resulting in the formation of bubbles on the lower film. Dirt may cause the equipment sensor to malfunction.

If necessary, the stripper composition for removing photoresist may further include conventional additives. The specific type or content of additives is not particularly limited.

In addition, the photoresist stripper composition for removing photoresist can be prepared according to the general method of mixing the above components, and the specific method for preparing the photoresist stripper composition for removing photoresist is not particularly specific. limit.

Meanwhile, according to another embodiment of the present disclosure, a method for stripping photoresist is provided, the method includes the step of stripping photoresist using the stripper composition for removing photoresist of the embodiment.

The description related to the stripper composition for removing photoresist includes the detailed description related to the above embodiments.

The method for stripping the photoresist may include the steps of: forming a photoresist pattern on a substrate on which the lower film is to be patterned by a photolithography process; patterning the lower film with the photoresist pattern as a mask; The agent composition strips the photoresist.

In the method of stripping the photoresist, the steps of forming the photoresist pattern and patterning the lower film can use the traditional manufacturing process of the device, and the specific method is not particularly limited.

Meanwhile, an example of the step of stripping the photoresist using the stripper composition for removing the photoresist is not particularly limited, but for example, the following step may be used: applying the stripper composition for removing the photoresist to the substrate in which the photoresist pattern remains; and subjecting the substrate to washing with an alkaline buffer solution, followed by washing with ultrapure water and drying. Since the above-mentioned stripper composition exhibits the rinsing ability to effectively remove the stains on the lower film and the ability to remove the natural oxide film and excellent stripping ability, the above-mentioned stripper composition can be effectively removed while remaining on the lower film. While maintaining the photoresist pattern on the film, the surface state of the underlying film is satisfactorily maintained. Accordingly, subsequent steps may be suitably performed on the patterned lower film to form the device.

Examples of the lower film formed on the substrate are not particularly limited, but may include aluminum or aluminum alloys, copper or copper alloys, molybdenum or molybdenum alloys, mixtures thereof, composite alloys thereof, composite laminates thereof, and the like.

The type, composition or physical properties of the photoresist to which the above stripping method can be applied are not particularly limited. For example, the photoresist may be a photoresist known for use with underlying films including aluminum or aluminum alloys, copper or copper alloys, molybdenum or molybdenum alloys, and the like. More specifically, the photoresist may include a photosensitive resin such as novolac resin, phenolic resin, or epoxy resin.

According to the present disclosure, there can be provided a stripper composition for removing a photoresist capable of suppressing the lower metal film during a stripping process and a method of stripping a photoresist using the same. Etch, and can effectively remove oxide while exhibiting excellent stripping ability to photoresist.

The invention will be explained in more detail in the following examples. However, these instances These are for illustrative purposes only and the invention is not intended to be limited by these examples.

<Examples 1 to 5: Preparation of Stripper Composition for Removing Photoresist>

According to the compositions shown in Table 1 below, the components were mixed to prepare the stripping agent compositions for removing photoresist of Examples 1 to 5, respectively. The specific composition of the prepared stripper composition for removing photoresist is shown in Table 1 below.

*Corrosion inhibitor 1: Methimazole

*Corrosion inhibitor 2: 2,2'-[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol

*Corrosion Inhibitor 3: Benzimidazole

*Corrosion inhibitor 4: imidazole

*Corrosion inhibitor 5: 2-methylimidazole

*Corrosion Inhibitor 6: 2-Mercaptobenzimidazole

<Comparative Examples 1 to 5: Preparation of Stripper Compositions for Removing Photoresist>

According to the compositions shown in Table 2 below, the components were mixed to prepare stripper compositions for removing photoresists of Comparative Examples 1 to 5, respectively. The specific composition of the prepared stripper composition for removing photoresist is shown in Table 2 below.

<Experimental Example: Measurement of Physical Properties of Stripper Compositions for Removing Photoresist Obtained in Examples and Comparative Examples>

The physical properties of the release agent compositions obtained in Examples and Comparative Examples were measured by the following methods, and the results are shown in the table.

1. Evaluation of stripping ability

First, drop 3.5 milliliters (ml) of the photoresist composition (quotient Designation: JC-800) was added to a 100 millimeter (mm) x 100 mm glass substrate, and the photoresist composition was applied for 10 seconds at 400 revolutions per minute (rpm) in a spin-coating device. The glass substrate was mounted on a hot plate, and hard baked at a temperature of 150° C. or 140° C. for 20 minutes to form a photoresist. The glass substrate on which the photoresist was formed was air-cooled at room temperature, and then cut into a size of 30 mm x 30 mm to prepare a sample for evaluation of the new liquid peeling ability of the stripper.

500 g of the release agent composition obtained in Examples 1 to 5 and one of Comparative Examples 1 to 4, 6 and 7 were prepared. In the state where the temperature was raised to 50° C., the photoresist on the glass substrate was treated with the release agent composition. The time required to completely strip and remove the photoresist was measured to evaluate the stripping ability of the new liquid of the stripper. At this time, the completion of the photoresist stripping was confirmed by observing whether the photoresist remained by irradiating ultraviolet light on the glass substrate.

The release abilities of the release agent compositions of Examples 1 to 5 and Comparative Examples 1 to 4, 6 and 7 were evaluated as described above, and the results are shown in Table 3 and Table 4 below.

As shown in Table 3 and Table 4 above, it was confirmed that the release agent compositions of Examples 1 to 5 exhibited equivalent or higher levels compared to the release agent compositions of Comparative Examples 1 to 4, 6 and 7 stripping ability.

2. Corrosion evaluation of copper (Cu) metal

3.5 ml of a photoresist composition (trade name: JC-800) was added dropwise to a 100 mm x 100 mm glass substrate on which a copper-containing thin film was formed, and applied at 400 rpm in a spin coating device Photoresist composition for 10 seconds. The glass substrate was mounted on a hot plate, and hard baked at a temperature of 150° C. or 140° C. for 20 minutes to form a photoresist. The glass substrate on which the photoresist was formed was air-cooled at room temperature, and then cut into a size of 30 mm×30 mm to prepare a sample for corrosion evaluation.

500 g of the stripper composition obtained in one of Examples 1, 3, 4, and 5 and Comparative Examples 1 to 7 was heated to a temperature of 50° C., and the sample used for corrosion evaluation was heated to a temperature of 50° C. It was immersed in the stripping agent composition for 10 minutes, and then washed with ultrapure water. The corrosion state of the washed sample surface was measured by scanning electron microscope (SEM) to evaluate the corrosion of copper metal, and the results are shown in Table 5 and Table 6 below.

As shown in Table 5 and Table 6 above, it was confirmed that the stripper compositions of Examples 1, 3, 4, and 5 were less corrosive to copper metal than Comparative Example 2 by including both methimazole and a triazole-based compound to 5 stripping agent compositions.

It can be seen from these results that the methimazole and the triazole-based compounds included in the stripper composition of the example have an excellent ability to prevent copper metal corrosion.

3. Corrosion evaluation of copper (Cu)/molybdenum (Mo) metal lower film

Using a transmission electron microscope (transmission electron microscope, TEM) (Helios Nanolab 650 (Helios Nanolab650)) in one of Examples 1 to 5 and Comparative Examples 1, 3, 4, 6 and 7 The cross-sections of the samples obtained for corrosion evaluation were observed. Specifically, flakes of samples for corrosion evaluation were prepared using a Focused Ion Beam (FIB), and then observed at an acceleration voltage of 2 kilovolts (kV). In order to prevent surface damage caused by ion beams, after forming a platinum (Pt) protective layer on the surface of the sample (Cu layer), a transmission electron microscope thin section was prepared.

As shown in Table 7 and Table 8 above, compared with the stripper composition containing methimazole and benzimidazole in Comparative Example 1 and the corrosion inhibitor containing one type in Comparative Examples 3, 4, and 7, it was confirmed that The stripper compositions, the stripper compositions of Examples 1 to 5 including both methimazole and triazole-based compounds, reduced the corrosion of the copper (Cu)/molybdenum (Mo) metal lower film.

As can be seen from these results, the stripping agent composition contained in the example The methimazole and triazole compounds have excellent ability to prevent corrosion of copper (Cu)/molybdenum (Mo) metal lower film.

Claims (8)

A stripper composition for removing photoresist, comprising: an amide compound in which a linear or branched chain alkyl group having 1 to 5 carbon atoms is substituted by 1 or 2 nitrogen atoms; an amine compound; a polar organic solvent ; Methimazole; and a triazole compound, wherein the weight ratio of the methimazole to the triazole compound is 1:1 to 1:50. The stripping agent composition for removing photoresist as described in item 1 of the patent scope of the application, wherein based on 100 parts by weight of the amine compound, the total content of the methimazole and the triazole compound is: 1 to 30 parts by weight. The stripping agent composition for removing photoresist as described in item 1 of the patent scope of the application, wherein the triazole compound comprises 2,2'-[[(methyl-1H-benzotriazole- 1-yl)methyl]imino]bisethanol, 4,5,6,7-tetrahydro-1H-benzotriazole, 1H-benzotriazole, 1H-1,2,3-triazole and At least one compound of the group consisting of methyl 1H-benzotriazole. The stripping agent composition for removing photoresist as described in item 1 of the patent scope of the application, Wherein the amine compound includes a cyclic amine compound with a weight average molecular weight of 95 g/mole or greater than 95 g/mole. The stripping agent composition for removing photoresist as described in item 1 of the patent scope of the application, wherein the linear or branched alkyl group having 1 to 5 carbon atoms is substituted by 1 or 2 nitrogen atoms. Amine compounds include compounds represented by the following Chemical Formula 1:

Wherein, in Chemical Formula 1, _R is hydrogen, methyl, ethyl or propyl, each of R and _R is _hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, And at least one of R ₂ and R ₃ is methyl. The stripping agent composition for removing photoresist as described in item 1 of the patent scope of the application, wherein the polar organic solvent is selected from the group consisting of alkylene glycol monoalkyl ether, pyrrolidone, sulfone and sulfide At least one of the groups of . The stripping agent composition for removing photoresist as described in item 1 of the patent scope of the application, comprising: based on the total composition, 10% to 80% by weight of the amide compound, wherein there are 1 to 5 A linear or branched alkyl group of carbon atoms is substituted by 1 or 2 nitrogen atoms; 0.1% to 10% by weight of the amine compound; 10% to 80% by weight of the polar organic solvent; 0.001% to 0.5% by weight of the methimazole; and 0.01% to 5.0% by weight of the triazole compound. A method for stripping photoresist, comprising the step of stripping photoresist by using the stripper composition for removing photoresist as described in item 1 of the patent scope of the application.