TWI803755B - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The substrate processing apparatus includes: a facing member including: a circular plate portion having a facing surface facing the substrate held by the substrate holding unit from above; and an extending portion extending from the circular plate portion. The plate part extends toward the outer direction of the radial direction with the aforementioned vertical axis as the center; the ring-shaped member surrounds the aforementioned substrate held by the aforementioned substrate holding unit when viewed from above; and the opposing member elevating unit makes the aforementioned opposing member and The annular member is lifted and lowered together, so that the barrier space is divided by the base plate, the opposing member, and the annular member, and the barrier space restricts the inflow of external atmosphere. The ring-shaped member has a guide surface for guiding the processing liquid present on the upper surface of the substrate by centrifugal force when the substrate rotating unit rotates the substrate held by the substrate holding unit. The peripheral portion of the substrate is further outward in the radial direction. The processing liquid discharge path is defined by the extending portion and the annular member, and the processing liquid discharge path discharges the processing liquid existing on the guide surface to the outside of the barrier space.

Description

Substrate processing apparatus and substrate processing method

The invention relates to a substrate processing device and a substrate processing method for processing a substrate. Substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for FPD (Flat Panel Display) such as organic EL (electroluminescence) display devices, substrates for optical discs, and substrates for magnetic disks. , substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, and other substrates.

When the surface of the substrate is treated with a treatment solution such as a chemical solution, there is a possibility that a pattern formed on the surface of the substrate may be oxidized due to oxygen dissolved in the treatment solution. In order to suppress oxidation of the pattern, it is necessary to lower the oxygen concentration of the atmosphere (atmosphere) near the surface of the substrate.

Therefore, the following Patent Document 1 discloses that a barrier member is provided to face the upper surface of a substrate held by a spin chuck, and the space between the barrier member and the substrate is filled with nitrogen gas, thereby reducing the The oxygen concentration of the atmosphere near the upper surface of the substrate.

[Prior Art Literature] [Patent Document]

[Patent Document 1] US Patent Application Publication No. 2015/14610009.

The barrier member included in the substrate processing apparatus described in Patent Document 1 includes: a disc portion facing the upper surface of the substrate; and a cylindrical portion extending downward from the outer periphery of the disc portion. Since the substrate is surrounded by the cylindrical portion, it is easy to reduce the oxygen concentration in the atmosphere near the upper surface of the substrate by nitrogen gas. When the processing liquid is supplied to the upper surface of the substrate while being surrounded by the cylindrical portion, the processing liquid on the substrate is scattered outward from the peripheral portion of the upper surface of the substrate and caught by the cylindrical portion. Therefore, the processing liquid splashed back from the cylindrical portion may reattach to the peripheral portion of the upper surface of the substrate, thereby generating particles.

Therefore, one object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of reducing the oxygen concentration in the atmosphere near the upper surface of the substrate and suppressing the generation of particles on the upper surface of the substrate.

One embodiment of the present invention provides a substrate processing apparatus, which includes: a substrate holding unit that holds a substrate horizontally; a substrate rotating unit that makes the substrate holding unit rotate around the center of the substrate held by the substrate holding unit The vertical axis of the part rotates; the processing liquid supply unit supplies the processing liquid toward the upper surface of the aforementioned substrate held by the aforementioned substrate holding unit; the inert gas supply unit supplies inert gas toward the upper surface of the aforementioned substrate held by the aforementioned substrate holding unit. Gas; the opposing member includes: a disc portion having an opposing surface facing the substrate held by the substrate holding unit from above; and an extending portion extending from the disc portion Extending toward the outer direction of the radial direction with the aforementioned vertical axis as the center; the ring-shaped member surrounds the aforementioned substrate held by the aforementioned substrate holding unit when viewed from above; and the opposing member lifting unit is used to make the aforementioned opposing member and the aforementioned ring Shaped members are raised and lowered together, so that by being held by the aforementioned substrate The held substrate, the opposing member, and the annular member define a barrier space, and the barrier space restricts the inflow of atmosphere from the outside.

The ring-shaped member has a guide surface for guiding the processing liquid present on the upper surface of the substrate to the upper surface of the substrate by centrifugal force when the substrate rotating unit rotates the substrate held by the substrate holding unit. The peripheral portion of the substrate is further outward in the radial direction. Furthermore, the processing liquid discharge path is defined by the extending portion and the annular member, and the processing liquid discharge path discharges the processing liquid present on the guide surface to the outside of the barrier space.

According to such a substrate processing apparatus, the blocking space is partitioned by the substrate, the facing member, and the ring member by moving the facing member up and down together with the ring member. By supplying the inert gas toward the upper surface of the substrate with the barrier space defined, the atmosphere in the barrier space can be replaced with the inert gas. Thereby, the oxygen concentration in the barrier space can be reduced, that is, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced. Since the isolation space restricts the inflow of atmosphere from the external space, when the atmosphere in the isolation space is replaced with an inert gas at one time, it is easy to maintain the state where the oxygen concentration in the atmosphere in the isolation space has been reduced.

By supplying the processing liquid to the upper surface of the substrate in a state where the atmosphere in the barrier space has been replaced with an inert gas, the upper surface of the substrate can be processed with the processing liquid while suppressing an increase in the oxygen concentration in the processing liquid.

The guide surface of the ring-shaped member guides the processing liquid existing on the upper surface of the substrate to a radially outer direction than the peripheral portion of the substrate by the centrifugal force caused by the rotation of the substrate. Furthermore, the processing liquid moving on the guide surface is not scattered from the substrate, but is guided to the processing liquid discharge path and discharged out of the barrier space. Since the guide surface exists between the peripheral portion of the substrate and the treatment liquid discharge path, the peripheral portion of the substrate is sufficiently separated from the extended portion of the opposing member. Therefore, can suppress The processing liquid discharged from the upper surface of the substrate is prevented from splashing back from the facing member and adhering to the upper surface of the substrate again. Even if the processing liquid discharged from the upper surface of the substrate splashes back from the opposing member, most of the splashed processing liquid adheres to the guide surface located radially outward from the upper surface of the substrate. Therefore, reattachment of the treatment liquid to the upper surface of the substrate can be suppressed. Therefore, generation of particles on the upper surface of the substrate can be suppressed.

From the above results, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced, and the generation of particles on the upper surface of the substrate can be suppressed.

In one embodiment of the present invention, the width of the treatment liquid discharge path is smaller than the width of the barrier space in the vertical direction. Therefore, the flow rate of the fluid that can pass through the treatment liquid discharge path is relatively small. Therefore, it is possible to suppress the inflow of the atmosphere outside the barrier space through the process liquid discharge path while the process liquid is discharged out of the barrier space through the process liquid discharge path. Therefore, the upper surface of the substrate can be processed with the processing liquid while suppressing an increase in the oxygen concentration in the processing liquid.

In one embodiment of the present invention, the annular member has a discharge path dividing surface connected to an outer end of the guide surface in the radial direction, and defines the treatment liquid discharge path. Furthermore, the treatment liquid discharge path has an inflow port at the boundary between the guide surface and the discharge path defining surface.

The treatment liquid may collide with the extended portion in the vicinity of the inflow port of the treatment liquid discharge path. A reverse flow (flow of the processing liquid toward the inner side in the radial direction of the substrate) occurs in the processing liquid colliding with the extending portion. As long as the guide surface is not provided, since the inlet of the processing liquid discharge path is arranged near the peripheral portion of the upper surface of the substrate, backflow of the processing liquid may occur on the substrate. When reverse flow occurs, the processing liquid directed inward in the radial direction may collide with the processing liquid directed outward in the radial direction, causing the processing liquid to scatter in the barrier space. When the treatment liquid scattered in the isolation space adheres to the upper surface of the substrate again, particles will be generated on the substrate.

Therefore, as long as the inflow port of the treatment liquid discharge path is provided at the boundary between the discharge path dividing surface and the guide surface connected to the outer direction end of the guide surface in the radial direction, backflow in the treatment liquid will not occur. The part is the guide surface. Therefore, it is possible to suppress backflow in the processing liquid on the substrate. Therefore, generation of particles on the upper surface of the substrate can be suppressed.

In one embodiment of the present invention, the discharge path defining surface and the guiding surface are formed on a single flat surface that is flat in the horizontal direction. When a step is provided between the guide surface and the discharge path defining surface, there is a possibility that the treatment liquid splashed due to the step may adhere to the upper surface of the substrate again. Therefore, particles may be generated on the upper surface of the substrate.

Therefore, as long as there is no step difference between the guide surface and the discharge path dividing surface, and the guide surface and the discharge path defining surface are formed on a single flat surface that is flat in the horizontal direction, the processing liquid flowing on the guide surface can flow in smoothly. to the treatment fluid discharge path. Therefore, it is possible to suppress scattering of the processing liquid in the barrier space, and it is possible to suppress the generation of fine particles due to the scattering of the processing liquid.

In one embodiment of the present invention, the substrate processing apparatus further includes: an opposing member rotating unit configured to make the opposing member and the annular member rotate around the vertical axis with the substrate held by the substrate holding unit. Synchronized rotation. The so-called synchronous rotation means to rotate in the same direction at the same rotation speed. In the case where the difference between the rotational speed of the substrate and the rotational speeds of the opposing member and the annular member is large, there is a possibility that the air flow in the barrier space is disturbed. When the airflow in the isolated space is disturbed, the blowing force of the airflow acts on the processing liquid on the upper surface of the substrate, the upper surface of the substrate is partially exposed, and the processing liquid is scattered in the isolated space. Therefore, as long as the substrate for partitioning the barrier space, the annular member, and the opposing member rotate synchronously, the turbulence of the airflow in the barrier space can be suppressed.

In one embodiment of the present invention, the substrate processing apparatus further includes: a plurality of connecting members for connecting the annular member and the opposing member. Furthermore, each of the coupling members is formed so as to face downstream in the rotation direction of the substrate held by the substrate holding unit as it goes outward in the radial direction in a plan view.

It is easy to generate an air flow toward the downstream side of the rotation direction as it moves toward the outer direction of the radial direction in the barrier space. Therefore, according to this substrate processing apparatus, each of the plurality of connecting members for connecting the opposing member and the ring-shaped member is formed so that it faces downstream in the rotational direction as it goes radially outward in a plan view. Therefore, it is possible to promote the generation of the airflow toward the downstream side in the rotation direction as it goes outward in the radial direction. Therefore, the turbulence of the airflow in the barrier space can be suppressed more.

In one embodiment of the present invention, the substrate processing apparatus further includes: a controller for controlling the substrate rotating unit, the processing liquid supply unit, the inert gas supply unit, and the opposing member lifting unit.

Moreover, the aforementioned controller is programmed to execute: the barrier space division process, which is to move the aforementioned opposing member and the aforementioned ring-shaped member through the aforementioned opposing member lifting unit and divide the aforementioned barrier space; the atmosphere replacement process, which is to use the aforementioned inert gas The supply unit supplies an inert gas toward the upper surface of the substrate, thereby displacing the atmosphere in the barrier space with the inert gas; the process liquid supply process is performed from the The processing liquid supply unit supplies the processing liquid to the upper surface of the substrate; and the processing liquid discharge step is to rotate the substrate by the substrate rotating unit, thereby transferring the processing liquid on the upper surface of the substrate through the guide surface and the processing liquid. The liquid discharge path is discharged to the outside of the aforementioned barrier space.

Therefore, the atmosphere in the barrier space can be surely replaced by the inert gas. Thereby, the oxygen concentration in the barrier space can be reduced, that is, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced. and Then, by rotating the substrate, centrifugal force acts on the processing liquid present on the upper surface of the substrate, and the processing liquid present on the upper surface of the substrate can be reliably discharged out of the barrier space through the guide surface and the processing liquid discharge path. Therefore, it is possible to remove the processing liquid from the blocking space while suppressing the processing liquid from scattering in the blocking space. Therefore, the processing liquid discharged from the upper surface of the substrate can be suppressed from splashing back from the facing member and reattaching to the upper surface of the substrate. Therefore, generation of particles on the upper surface of the substrate can be suppressed.

From the above results, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced, and generation of particles on the upper surface of the substrate can be suppressed.

In one embodiment of the present invention, the guide surface has an inclined surface that is inclined upward as it goes outward in the radial direction.

Furthermore, the controller is programmed to perform: a liquid reservoir forming step of supplying the processing liquid to the upper surface of the substrate held by the substrate holding unit in the processing liquid supplying step, whereby the inclined surface and the substrate The upper surface of the upper surface of the substrate receives the processing liquid and forms a liquid reservoir of the processing liquid; and a liquid reservoir discharge process is to accelerate the rotation of the substrate by the substrate rotating unit in the process of discharging the processing liquid and discharge the aforementioned substrate from the upper surface of the substrate. Reservoir.

According to such a substrate processing apparatus, by supplying the processing liquid to the upper surface of the substrate, the reservoir of the processing liquid can be formed by the inclined surface and the upper surface of the substrate. Therefore, since the processing liquid is not discharged to the outer direction of the substrate, the upper surface of the substrate can be processed by the processing liquid in an amount required to form a liquid reservoir. Therefore, the consumption of the treatment liquid can be reduced.

The inclined surface is inclined so as to go upward as it goes outward in the radial direction. Therefore, by accelerating the rotation of the substrate and applying centrifugal force to the liquid storage, the processing liquid can be smoothly jumped up the inclined surface. The processing liquid that has jumped up the inclined surface smoothly flows into the processing liquid discharge path. Therefore, generation of particles on the upper surface of the substrate can be suppressed.

Another embodiment of the present invention is a substrate processing method, which includes: a substrate holding step, which is to hold a circular substrate in a plan view horizontally; The member and the ring-shaped member move up and down and partition the barrier space by the aforementioned facing member, the aforementioned ring-shaped member, and the aforementioned substrate. The aforementioned circular plate portion has a facing surface facing the aforementioned substrate from above. It extends from the circular plate portion toward the outer side of the radial direction centering on the vertical axis passing through the central portion of the substrate, the ring-shaped member surrounds the substrate when viewed from above, and the barrier space restricts the atmosphere from the outside. Inflow; the atmosphere replacement process is to supply inert gas to the barrier space, whereby the atmosphere in the barrier space is replaced by the inert gas; the process liquid supply process is in a state where the atmosphere in the barrier space has been replaced by the inert gas Next, supplying the processing liquid to the upper surface of the substrate; and a processing liquid discharge step of rotating the substrate around the rotation direction of the vertical axis in a state where the processing liquid is present on the upper surface of the substrate, whereby The processing liquid at the peripheral portion of the upper surface of the substrate is guided to the processing liquid discharge path partitioned by the extending portion and the annular member via the guide surface provided on the annular member, and the processing liquid is discharged from the processing liquid. The path exits towards the outside of the aforementioned barrier space.

According to this substrate processing method, the ring-shaped member and the facing member are raised and lowered together, whereby the barrier space is partitioned by the substrate, the facing member, and the ring-shaped member. By supplying the inert gas toward the upper surface of the substrate with the barrier space defined, the atmosphere in the barrier space can be replaced by the inert gas. Thereby, the oxygen concentration in the barrier space can be reduced, that is, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced. Since the isolation space restricts the inflow of atmosphere from the external space, when the atmosphere in the isolation space is replaced with an inert gas at one time, it is easy to maintain the state where the oxygen concentration in the atmosphere in the isolation space has been reduced.

By supplying the processing liquid to the upper surface of the substrate in a state where the atmosphere in the barrier space has been replaced with an inert gas, the upper surface of the substrate can be processed with the processing liquid while suppressing an increase in the oxygen concentration in the processing liquid.

The processing liquid present on the upper surface of the substrate is moved from the peripheral portion of the upper surface of the substrate by the centrifugal force caused by the rotation of the substrate, and is guided to the processing liquid discharge path through the guide surface. The treatment liquid guided to the treatment liquid discharge path is discharged out of the barrier space. Since the guide surface exists between the peripheral portion of the substrate and the treatment liquid discharge path, the peripheral portion of the substrate is sufficiently separated from the extended portion of the opposing member. Therefore, the processing liquid discharged from the upper surface of the substrate can be suppressed from splashing back from the facing member and reattaching to the upper surface of the substrate. Even if the processing liquid discharged from the upper surface of the substrate splashes back from the opposing member, most of the splashed processing liquid adheres to the guide surface located radially outward from the upper surface of the substrate. Therefore, reattachment of the treatment liquid to the upper surface of the substrate can be suppressed. Therefore, generation of particles on the upper surface of the substrate can be suppressed.

From the above results, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced, and the generation of particles on the upper surface of the substrate can be suppressed.

In another embodiment of the present invention, the width of the treatment liquid discharge path is smaller than the width of the barrier space in the vertical direction. Therefore, the flow rate of the fluid that can pass through the treatment liquid discharge path is relatively small. Therefore, it is possible to suppress the inflow of the atmosphere outside the barrier space through the process liquid discharge path while the process liquid is discharged out of the barrier space through the process liquid discharge path. Therefore, the upper surface of the substrate can be processed with the processing liquid while suppressing an increase in the oxygen concentration in the processing liquid.

In another embodiment of the present invention, the annular member has a discharge path dividing surface that is connected to an outer end of the guiding surface in the radial direction and divides the process. liquid discharge path. Furthermore, the treatment liquid discharge path has an inflow port at the boundary between the guide surface and the discharge path defining surface.

According to this substrate processing method, the inflow port of the treatment liquid discharge path is provided at the boundary between the discharge path defining surface and the guide surface connected to the outer direction end of the guide surface in the radial direction. Therefore, the place where the backflow in the processing liquid occurs is not on the upper surface of the substrate but on the guide surface. Therefore, it is possible to suppress backflow in the processing liquid on the substrate. Therefore, generation of particles on the upper surface of the substrate can be suppressed.

In another embodiment of the present invention, the discharge path defining surface and the guiding surface are formed on a single flat surface that is flat in the horizontal direction. According to this substrate processing method, there is no step difference between the guide surface and the discharge path defining surface, and the guide surface and the discharge path defining surface are formed on a single flat surface that is flat in the horizontal direction. Therefore, the processing liquid flowing on the guide surface can smoothly flow into the processing liquid discharge path. Therefore, it is possible to suppress scattering of the processing liquid in the barrier space, and it is possible to suppress the generation of fine particles due to the scattering of the processing liquid.

In another embodiment of the present invention, the substrate processing method further includes: a synchronous rotation step of synchronously rotating the annular member and the opposing member around the vertical axis and the substrate in the processing liquid discharge step. Therefore, the turbulence of the airflow in the barrier space can be suppressed.

In other embodiment of this invention, the said ring-shaped member and the said opposing member are connected by the connection member. Furthermore, the coupling member is formed so as to face downstream in the rotation direction of the substrate as it goes outward in the radial direction in plan view. Therefore, it is possible to promote the generation of the airflow toward the downstream side in the rotation direction as it goes outward in the radial direction. Therefore, the turbulence of the airflow in the barrier space can be suppressed more.

In another embodiment of the present invention, the guide surface has an inclined surface that is inclined upward as it goes outward in the radial direction. The process of supplying the processing liquid includes a liquid reservoir forming step of supplying the processing liquid to the upper surface of the substrate, whereby the inclined surface and the upper surface of the substrate receive the processing liquid to form a reservoir of the processing liquid. Furthermore, the processing liquid discharge step includes a liquid storage removal step of accelerating the rotation of the substrate and discharging the liquid storage from the upper surface of the substrate.

According to this substrate processing method, by supplying the processing liquid to the upper surface of the substrate, a reservoir of the processing liquid can be formed by the inclined surface and the upper surface of the substrate. Therefore, since the processing liquid is not discharged to the outer direction of the substrate, the upper surface of the substrate can be processed by the processing liquid in an amount required to form a liquid reservoir. Therefore, the consumption of the treatment liquid can be reduced.

The inclined surface is inclined so as to go upward as it goes outward in the radial direction. Therefore, by accelerating the rotation of the substrate and applying centrifugal force to the liquid storage, the processing liquid can be smoothly jumped up the inclined surface. The processing liquid that has jumped up the inclined surface smoothly flows into the processing liquid discharge path. Therefore, generation of particles on the upper surface of the substrate can be suppressed.

In another embodiment of the present invention, the inner end surface of the annular member in the radial direction extends in the vertical direction. The upper end portion of the end surface in the inner direction is connected to the guide surface. Furthermore, the process liquid supply step includes a liquid reservoir forming step in which the ring-shaped member has been moved so that the upper end portion of the end surface in the inner direction of the ring-shaped member is located above the upper surface of the substrate. In this state, the processing liquid is supplied toward the upper surface of the substrate, whereby the inner end surface of the annular member and the upper surface of the substrate catch the processing liquid to form a reservoir of the processing liquid. The process of discharging the treatment liquid includes: the process of removing the liquid storage, and the process of using the aforementioned ring-shaped member The ring-shaped member is moved so that the upper end portion of the end surface in the inner side is at the same height as the upper surface of the substrate, whereby the liquid reservoir is removed from the upper surface of the substrate.

According to this substrate processing method, by supplying the processing liquid to the upper surface of the substrate, a reservoir of the processing liquid can be formed by the inner end surface of the annular member and the upper surface of the substrate. Thus, the upper surface of the substrate is treated by the treatment liquid in the reservoir. Therefore, the upper surface of the substrate can be processed by simply supplying the processing liquid in an amount required to form the liquid reservoir on the upper surface of the substrate. Therefore, compared with the structure in which the processing liquid supplied to the upper surface of the substrate is discharged out of the substrate without being caught by the end surface in the inner direction, the consumption of the processing liquid can be reduced.

When the ring member is moved so that the upper end portion of the inner end surface of the ring member is at the same height position as the upper surface of the substrate, the liquid receiving state of the processing liquid from the inner end surface is released. Therefore, the processing liquid present on the upper surface of the substrate can smoothly flow into the processing liquid discharge path. Therefore, generation of particles on the upper surface of the substrate can be suppressed.

In other embodiments of the present invention, the above-mentioned substrate processing method further includes: a guard moving step, which is to make the first guard including the first cylindrical part and the first annular part and the second cylindrical The second protective cover of the part and the second annular part moves up and down individually. The aforementioned first cylindrical part surrounds the aforementioned opposing member and the aforementioned annular member when viewed from above. The cylindrical portion extends toward the inner side of the radial direction, the second cylindrical portion surrounds the opposing member and the annular member in plan view, and the second annular portion extends from the second cylindrical portion toward the radial direction. The inward direction of the inner side extends and faces the aforementioned first annular portion from below. The treatment liquid discharge path has a discharge port for discharging the treatment liquid outward in the radial direction. Furthermore, the shield moving step includes the step of: when the treatment liquid is discharged from the discharge port, the inner direction end of the first annular portion located in the radial direction with the treatment liquid discharge path in the vertical direction and the The aforementioned diameter The first protective cover and the second protective cover are moved between the inner direction ends of the second annular portion in the direction.

According to this substrate processing method, when the processing liquid is discharged from the discharge port, the second annular portion of the second shield is positioned below the discharge port in the vertical direction. Therefore, the processing liquid splashed back from the first shield does not move radially inward from the second shield but adheres to the second shield. Therefore, it is possible to suppress the processing liquid splashed back from the first shield from adhering to the lower surface of the substrate.

In an embodiment of the present invention, the aforementioned substrate processing method further includes: a protective liquid supplying step, which is performed in parallel with the aforementioned treating liquid discharging step, for supplying protection to the lower surface of the aforementioned substrate to protect the lower surface of the aforementioned substrate. liquid. Furthermore, the step of moving the shield includes the step of moving the second annular portion so that the radially inner end of the second annular portion is lower than the discharge port and higher than the lower end of the annular member. The second shield moves.

According to this substrate processing method, the protective liquid is supplied to the lower surface of the substrate in parallel with the processing liquid discharge step. Therefore, even in the case where the mist of the processing liquid reaches the vicinity of the lower surface of the substrate beyond the second shield, the lower surface of the substrate can be protected from the mist.

Furthermore, the second guard moves so that the inner end of the second annular portion in the radial direction is located below the discharge port and above the lower end of the ring member. Therefore, the second protective cover can catch the protective liquid discharged from the lower surface of the substrate to the outer direction. That is, the first protective cover can catch the processing liquid discharged from the upper surface of the substrate and the second protective cover can catch the protective liquid discharged from the lower surface of the substrate to the outer direction. Therefore, mixing of the processing liquid discharged from the substrate and the protection liquid can be avoided. Accordingly, the treatment liquid and the protection liquid can be recovered without mixing the treatment liquid and the protection liquid.

In another embodiment of the present invention, the aforementioned substrate processing method further includes: a prerinse step, which is to supply cleaning to the upper surface of the aforementioned substrate before the aforementioned processing liquid supply step. Wash (rinse) solution. The cleaning liquid supplied to the upper surface of the substrate in the pre-cleaning step closes the gap between the annular member and the substrate and is discharged from the processing liquid discharge path. Furthermore, the aforementioned pre-cleaning step is performed in parallel with the aforementioned atmosphere replacement step.

The gap between the ring member and the substrate is plugged with cleaning fluid. Therefore, the inert gas is suppressed from moving through the gap. In addition, the cleaning liquid is discharged from the barrier space to the external space through the processing liquid discharge path. Therefore, unless such a large force as to push back the cleaning liquid in the processing liquid discharge path is not applied, the atmosphere does not flow into the barrier space through the processing liquid discharge path. On the other hand, since the inert gas is supplied to the barrier space, the air in the barrier space is discharged to the external space together with the cleaning liquid through the treatment liquid discharge path so that the pressure in the barrier space does not rise excessively.

Therefore, the inflow of the atmosphere from the external space to the partition space can be further restricted, and the atmosphere in the partition space can be replaced with an inert gas.

The above-described object and other objects, features, and effects of the present invention will become more apparent through the description of the following embodiments with reference to the accompanying drawings.

1: Substrate processing device

2,2P,2Q,2R,2S: processing unit

3: Controller

3A: Processor

3B: Memory

4: chamber

5,5P: Rotation Fixture

6,6Q: Opposite members

6a: opposite side

6b: Connecting hole

6c, 8c: Junction

7: Handling hood

8,8Q: ring member

8a: concave part

9: Connecting components

10,10Q: Treatment liquid discharge path

10a, 10Qa: Inflow inlet

10b, 10Qb: outlet

11: Central nozzle

11a, 14a: ejection port

12: First lower surface nozzle

13: Second lower surface nozzle

14: Bottom surface nozzle

20: Fixture pin

21: Rotation base

21a: through hole

22: Rotation axis

23: Rotation motor

24: suction port

25: Attraction path

26: suction tube

27: Attraction unit

28: Suction valve

30: shell

31: The first tube

32: The second tube

33: The third department

34: The fourth tube

40: Liquid piping

41: Upper cleaning fluid piping

42: Upper replacement fluid piping

43: Inert gas piping

44,47: Lower side cleaning fluid piping

45,48: Lower replacement fluid piping

46:Common piping

49: Inert gas piping

50: Liquid medicine valve

51: Upper cleaning liquid valve

52: Upper replacement fluid valve

53: Inert gas valve

54,57: Lower side washer fluid valve

55,58: Lower replacement fluid valve

59: Inert gas valve

60: hollow shaft

61: Opposite component lifting unit

62: Opposite component rotation unit

63: Flange

63a: positioning hole

65: Circular plate part

66,66Q: Extended setting department

71: Shield

71A: First Shield

71B: Second Shield

72: cover

72A: First cover

72B: second cover

74: Protective cover lifting unit

75A: the first cylindrical part

75B: the second cylindrical part

76A: The first circular part

76a, 76b: radially inner end

76B: The second ring part

80,110: wide part

80a, 110b: flat lower surface

80b: Radial inner end face

81,111: connection part

81a, 111a: sloped lower surface

84: Inner direction end face

85: Guide surface

86: Discharge path division surface

86A: Inclined division plane

86B: vertical division plane

86Q: Discharge path division surface

87: Lower sloped surface

88: Bottom flat surface

90: lower side gas flow path

100: covered liquid

101: liquid storage

110a: vertical cylindrical surface

120: inclined discharge path

121: vertical discharge path

130: support member

131: supporting member lifting unit

132: Opposite component support part

132a: Through hole for cylindrical part

132b: chimeric protrusion

133: nozzle support part

134: wall

135: The first fitting part

136: The second fitting part

A1: Axis of rotation

C: carrier

CR,IR: handling robot

D1: Barrier space width

D2: gap width

D3: Discharge path width

F: Airflow

G: Gap

LP: load port

OS: external space

R: direction of rotation

RD: downstream testing

SS: barrier space

W: Substrate

[ Fig. 1 ] is a schematic plan view showing the layout of a substrate processing apparatus according to a first embodiment of the present invention.

[ Fig. 2 ] is a partial cross-sectional view showing a schematic configuration of a processing unit included in the aforementioned substrate processing apparatus.

[ Fig. 3] Fig. 3 is a cross-sectional view around an extending portion of an opposing member included in the processing unit.

[ Fig. 4 ] is a sectional view taken along line IV-IV shown in Fig. 2 .

[ Fig. 5 ] is a block diagram showing the electrical configuration of the main parts of the aforementioned substrate processing apparatus.

[FIG. 6] It is a flow chart for demonstrating an example of the substrate processing performed by the said substrate processing apparatus.

[FIG. 7A] is a schematic diagram for explaining the state of the aforementioned substrate processing.

[FIG. 7B] is a schematic diagram for explaining the state of the aforementioned substrate processing.

[FIG. 7C] is a schematic diagram for explaining the state of the aforementioned substrate processing.

[FIG. 7D] is a schematic diagram for explaining the state of the aforementioned processing.

[FIG. 7E] is a schematic diagram for explaining the state of the aforementioned processing.

[FIG. 7F] is a schematic diagram for explaining the state of the aforementioned processing.

[FIG. 8] It is a schematic diagram for demonstrating the state of the processing liquid in the vicinity of the ring-shaped member in the said substrate processing.

[FIG. 9] It is a schematic diagram for explaining the state in which the shield catches the processing liquid in the said substrate processing.

[ FIG. 10A ] is a schematic diagram for explaining another example of the substrate processing performed by the aforementioned substrate processing apparatus.

[ FIG. 10B ] is a schematic diagram for explaining another example of substrate processing performed by the aforementioned substrate processing apparatus.

[FIG. 11A] is a schematic diagram for explaining a modification example of the aforementioned substrate processing apparatus.

[FIG. 11B] is a schematic diagram for explaining a modification example of the aforementioned substrate processing apparatus.

[ Fig. 12] Fig. 12 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in a substrate processing apparatus according to a second embodiment of the present invention.

[ Fig. 13] Fig. 13 is a view of the periphery of the ring-shaped member included in the processing unit according to the second embodiment, viewed from above.

[ Fig. 14 ] is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in a substrate processing apparatus according to a third embodiment of the present invention.

[ Fig. 15] Fig. 15 is a cross-sectional view of the periphery of the facing member and the annular member included in the processing unit according to the third embodiment.

[FIG. 16] It is a schematic diagram for demonstrating the substrate processing using the substrate processing apparatus of 3rd Embodiment.

[ Fig. 17 ] is a schematic diagram for explaining another example of substrate processing using the substrate processing apparatus of the third embodiment.

[ Fig. 18 ] is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in a substrate processing apparatus according to a fourth embodiment of the present invention.

[ Fig. 19 ] is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in a substrate processing apparatus according to a fifth embodiment of the present invention.

[FIG. 20] It is a schematic diagram for explaining the modification of the connection member connected with the said ring-shaped member.

[First Embodiment]

FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus 1 according to a first embodiment of the present invention.

The substrate processing device 1 is a blade-type device for processing substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate.

The substrate processing device 1 includes: a plurality of processing units 2, which process the substrate W by fluid; a load port (load port) LP, which is loaded with a carrier (carrier) C, and the carrier C is to accommodate the The processing unit 2 processes a plurality of substrates W; the transport robots IR and CR transport the substrate W between the loading port LP and the processing unit 2; and the controller 3 controls the substrate processing device 1.

The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2 . The plurality of processing units 2 have, for example, the same configuration. The processing liquid supplied to the substrate W in the processing unit 2 includes a chemical liquid, a cleaning liquid, a replacement liquid, etc., which will be described in detail later.

Each processing unit 2 includes a chamber 4 and a processing cup 7 disposed in the chamber 4 , and processes the substrate W in the processing cup 7 . An entrance (not shown) is formed in the chamber 4 for the transfer robot CR to carry the substrate W in and out. The chamber 4 is equipped with a shutter unit (not shown) for opening and closing the entrance.

FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2 . The processing unit 2 includes a self-rotating jig 5 , an opposing member 6 , a processing cover 7 , an annular member 8 , a central nozzle 11 , a plurality of first lower surface nozzles 12 and a plurality of second lower surface nozzles 13 .

The autorotation jig 5 rotates the substrate W around a vertical rotation axis A1 (vertical axis) passing through the center of the substrate W while holding the substrate W horizontally. The spin jig 5 includes a spin base 21 , a spin shaft 22 , and a spin motor 23 , and the spin motor 23 applies a rotational force to the spin shaft 22 . The rotating shaft 22 is a hollow shaft. The rotation shaft 22 extends vertically along the rotation axis A1. The rotation axis A1 is a vertical axis passing through the center of the substrate W. As shown in FIG. An autorotation base 21 is coupled to the upper end of the rotation shaft 22 . The rotation base 21 is externally embedded on the upper end of the rotation shaft 22 . The upper surface of the rotation base 21 is circular in plan view. The diameter of the upper surface of the spin base 21 is smaller than the diameter of the substrate W. As shown in FIG.

The spin jig 5 further includes a suction unit 27 for sucking the substrate W placed on the upper surface of the spin base 21 so that the spin base 21 holds the substrate W.

A suction path 25 is inserted through the rotation base 21 and the rotation shaft 22 . The suction path 25 has a suction port 24 exposed from the center of the upper surface of the spin base 21 . The suction path 25 is connected to a suction pipe 26 . The suction pipe 26 is connected to a suction unit 27 such as a vacuum pump. A suction valve 28 for opening and closing the path of the suction pipe 26 is interposed between the suction pipe 26 .

The rotation jig 5 is an example of a substrate holding unit, and holds the substrate W horizontally. The board|substrate W can be arrange|positioned at the correct position on the rotation base 21 using the eccentricity sensor which is not shown in figure.

The rotation shaft 22 is rotated by the rotation motor 23 , thereby rotating the rotation base 21 . Accordingly, the substrate W rotates around the rotation axis A1 together with the spin base 21 . The autorotation motor 23 is an example of a substrate rotation unit, and is used to rotate the substrate W around the rotation axis A1.

Hereinafter, the inner direction in the radial direction centered on the rotation axis A1 is referred to as "the inner direction in the radial direction", and the outer direction in the radial direction centered on the axis A1 is referred to as the "outer direction in the radial direction".

The opposing member 6 includes: a disc portion 65 facing the substrate W held by the rotation jig 5 from above; and a flange-shaped (cylindrical) extending portion 66 extending from the disc portion. 65 extends radially outward.

The disk portion 65 is formed in a disk shape and has substantially the same diameter as the substrate W or a diameter larger than the diameter of the substrate W. As shown in FIG. The disk part 65 has the opposing surface 6a which opposes the upper surface (upper surface) of the board|substrate W. As shown in FIG. The facing surface 6 a is arranged substantially horizontally above the rotation jig 5 .

Since the extension portion 66 extends radially outward from the disc portion 65 , it is located further radially outward than the peripheral edge of the substrate W. As shown in FIG.

The hollow shaft 60 is fixed to the opposite side of the facing surface 6 a in the circular plate portion 65 . A communicating hole 6b is formed in the portion of the circular plate portion 65 that overlaps the rotation axis A1 in plan view. The communicating hole 6b vertically penetrates the circular plate portion 65 and communicates with the inner space of the hollow shaft 60 .

The center nozzle 11 is accommodated in the inner space of the hollow shaft 60 of the opposing member 6 . The discharge port 11a provided at the tip of the central nozzle 11 faces the central region of the upper surface of the substrate W from above. The central region of the upper surface of the substrate W refers to the region including the rotation center of the substrate W and its surroundings on the upper surface of the substrate W.

The central nozzle 11 is composed of: a plurality of tubes (tube) (the first tube 31, the second tube 32, the third tube 33 and the fourth tube 34), which eject fluid downwards; and a cylindrical shell The body (casing) 30 surrounds a plurality of tubes. The housing 30 and the plurality of tubes extend in the vertical direction along the rotation axis A1. The discharge port 11a of the center nozzle 11 is also the discharge port of each pipe part.

The first pipe portion 31 (central nozzle 11 ) is an example of a chemical solution supply unit for supplying a chemical solution such as DHF (dilute hydrofluoric acid; dilute hydrofluoric acid) to the upper surface of the substrate W. As shown in FIG. The second pipe portion 32 (central nozzle 11 ) is an example of a cleaning liquid supply unit, and supplies cleaning liquid such as DIW (deionized water) to the upper surface of the substrate W. As shown in FIG. The third pipe portion 33 (central nozzle 11 ) is an example of a replacement liquid supply unit for supplying a replacement liquid such as IPA (isopropyl alcohol) to the upper surface of the substrate W. As shown in FIG. That is, the central nozzle 11 is an example of a processing liquid supply unit for supplying processing liquids such as chemical liquid, cleaning liquid, and replacement liquid to the upper surface of the substrate W. As shown in FIG.

The fourth pipe portion 34 (central nozzle 11 ) is an example of an inert gas supply unit, and supplies an inert gas such as nitrogen gas to the upper surface of the substrate W. As shown in FIG.

The first pipe part 31 is connected to the liquid medicine pipe 40 , and the liquid medicine pipe 40 is used to guide the liquid medicine to the first pipe part 31 . When the chemical solution valve 50 interposed in the chemical solution piping 40 is opened, the chemical solution is sprayed from the first pipe portion 31 (center nozzle 11 ) toward the center region of the upper surface of the substrate W in a continuous flow.

The chemical liquid ejected from the first tube portion 31 is not limited to DHF. That is, the liquid medicine ejected from the first pipe portion 31 may also include sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), organic bases ( For example, a liquid of at least one of TMAH (tetramethyl ammonium hydroxide; tetramethylammonium hydroxide) and the like), a surfactant, and an anti-corrosion agent. As an example of a liquid medicine mixed with these liquids, SPM (sulfuric acid/hydrogen peroxide mixture; sulfuric acid hydrogen peroxide mixture), SC1 (Standard clean-1; the first standard cleaning solution; that is, ammonia hydrogen peroxide Mixture (ammonia-hydrogen peroxide mixture)), etc.

The second pipe part 32 is connected to the upper cleaning liquid pipe 41 , and the upper cleaning liquid pipe 41 is used to guide the cleaning liquid to the second pipe part 32 . When the upper cleaning liquid valve 51 interposed in the upper cleaning liquid pipe 41 is opened, the cleaning liquid is continuously sprayed from the second pipe portion 32 (center nozzle 11 ) toward the center region of the upper surface of the substrate W.

As the cleaning solution, DIW, carbonated water, electrolyzed ionized water, hydrochloric acid water at a diluted concentration (for example, about 1 ppm to about 100 ppm), ammonia water at a diluted concentration (for example, about 1 ppm to about 100 ppm), and reduced water (hydrogen water) can be exemplified.

The third pipe part 33 is connected to the upper replacement liquid pipe 42 , and the upper replacement liquid pipe 42 is used to guide the replacement liquid to the third pipe part 33 . When the upper replacement liquid valve 52 interposed between the upper replacement liquid pipe 42 is opened, the replacement liquid is sprayed from the third pipe portion 33 (central nozzle 11 ) toward the central region of the upper surface of the substrate W in a continuous flow direction.

The replacement liquid ejected from the third pipe portion 33 is a liquid for replacing the cleaning liquid on the upper surface of the substrate W. As shown in FIG. The replacement liquid is preferably a liquid with higher volatility than the cleaning liquid. The replacement fluid sprayed from the third tube portion 33 preferably has compatibility with the cleaning fluid.

The replacement liquid ejected from the third pipe portion 33 is, for example, an organic solvent. As the replacement liquid ejected from the third pipe part 33, IPA, HFE (hydrofluoroether; hydrofluoroether), methanol, ethanol, acetone, and trans-1,2-dichloroethylene (Trans-1,2-dichloroethylene) can be exemplified. ) at least one of the liquid, etc.

In addition, the replacement liquid ejected from the third pipe portion 33 does not have to be composed of only a single component, and may be a liquid mixed with other components. For example, the replacement liquid ejected from the third pipe portion 33 may be a mixture of IPA and DIW, or a mixture of IPA and HFE.

The fourth pipe part 34 is connected to the inert gas pipe 43 , and the inert gas pipe 43 is used to guide the inert gas to the fourth pipe part 34 . When the inert gas valve 53 interposed in the inert gas piping 43 is opened, the inert gas is continuously sprayed downward from the fourth pipe portion 34 (center nozzle 11 ).

The inert gas system sprayed from the fourth pipe portion 34 is, for example, an inert gas such as nitrogen (N ₂ ). The inert gas is a gas that is inert to the upper surface of the substrate W and the pattern formed on the upper surface of the substrate W. As shown in FIG. The inert gas is not limited to nitrogen, and rare gases such as argon can also be used.

Although only one first lower surface nozzle 12 is shown in FIG. 2 , a plurality of first lower surface nozzles 12 are arranged in the rotation direction R of the substrate W with intervals therebetween. The first lower surface nozzle 12 is an example of a lower cleaning liquid supply unit for supplying a cleaning liquid such as DIW to the lower surface of the substrate W. As shown in FIG.

The plurality of first lower surface nozzles 12 are respectively connected to a plurality of lower cleaning liquid pipes 44 , and the lower cleaning liquid piping 44 is used to guide the cleaning liquid to the first lower surface nozzles 12 . When opening the clamp At the lower cleaning liquid valve 54 of the lower cleaning liquid piping 44 , the cleaning liquid is sprayed from the first bottom surface nozzle 12 toward the outer peripheral region of the lower surface of the substrate W in a continuous flow.

The outer peripheral region of the lower surface of the substrate W refers to an annular region between the central region and the peripheral region of the lower surface of the substrate W. The central region of the lower surface of the substrate W refers to the region including the rotation center of the substrate W and its surroundings on the lower surface of the substrate W. The peripheral area of the lower surface of the substrate W refers to the area including the peripheral edge of the lower surface of the substrate W and its surroundings.

As the cleaning liquid sprayed from the first lower surface nozzle 12 , the same cleaning liquid as the cleaning liquid sprayed from the second pipe portion 32 can be exemplified. That is, as the cleaning liquid system sprayed from the first lower surface nozzle 12, DIW, carbonated water, electrolyzed ionized water, hydrochloric acid water with a diluted concentration (for example, about 1 ppm to about 100 ppm), and diluted concentration (for example, about 1 ppm to about 100 ppm) can be exemplified. Ammonia water, reduced water (hydrogen water), etc.

Although only one second lower surface nozzle 13 is shown in FIG. 2 , a plurality of second lower surface nozzles 13 are arranged in the rotation direction R of the substrate W with intervals therebetween. The second lower surface nozzle 13 is an example of a lower side replacement liquid supply unit, and supplies a replacement liquid such as IPA to the lower surface of the substrate W. As shown in FIG.

The plurality of second lower surface nozzles 13 are respectively connected to a plurality of lower side replacement liquid pipes 45 , and the plurality of lower side replacement liquid pipes 45 are used to guide the replacement liquid to the second lower surface nozzles 13 respectively. When the lower replacement liquid valve 55 interposed between the lower replacement liquid piping 45 is opened, the replacement liquid is sprayed from the second lower surface nozzle 13 toward the outer peripheral region of the lower surface of the substrate W in a continuous flow.

As the replacement liquid ejected from the second lower surface nozzle 13 , the same replacement liquid as that ejected from the third pipe portion 33 can be exemplified. That is, as the replacement liquid ejected from the third pipe part 33 , a liquid containing at least one of IPA, HFE, methanol, ethanol, acetone, and trans-1,2-dichloroethylene, etc. can be exemplified.

The replacement liquid ejected from the second lower surface nozzle 13 does not have to be composed of only a single component, and may be a liquid mixed with other components. For example, the replacement fluid sprayed from the second lower surface nozzle 13 may be a mixture of IPA and DIW, or a mixture of IPA and HFE.

The processing unit 2 further includes: an opposing member elevating unit 61 , driving the opposing member 6 up and down; and an opposing member rotating unit 62 , rotating the opposing member 6 around the rotation axis A1 . The opposing member elevating unit 61 can position the opposing member 6 at any position (height) from the lower position to the upper position.

The lower position refers to a position where the facing surface 6 a is closest to the substrate W within the movable range of the facing member 6 . The upper position refers to the position where the facing surface 6 a is farthest from the substrate W within the movable range of the facing member 6 .

In order for the transport robot CR to access the vicinity of the autorotation base 21 and to transport the substrate W into and out of the chamber 4 , the facing member 6 needs to be located at the upper position.

The opposing member elevating unit 61 includes, for example: a ball screw (ball screw) mechanism (not shown), which is combined with a support member (not shown), which supports the hollow shaft 60; and an electric motor (not shown). ) is to impart a driving force to the ball screw mechanism. The opposing member elevating mechanism unit 61 is also referred to as an opposing member elevator (baffle plate elevator).

The opposing member rotating unit 62 includes, for example, an electric motor (not shown) for rotating the hollow shaft 60 . The electric motor is built in, for example, a support member for supporting the hollow shaft 60 . The opposing member rotating unit 62 rotates the hollow shaft 60 to thereby rotate the opposing member 6 .

The annular member 8 surrounds the substrate W in plan view. The annular member 8 is disposed below the extended portion 66 of the opposing member 6 . The ring member 8 is connected to the extended set by a plurality of connecting members 9 Section 66. Since the ring-shaped member 8 is connected to the facing member 6 , the ring-shaped member 8 is raised and lowered by raising and lowering the facing member 6 . That is, the opposing member elevating unit 61 also functions as an annular member elevating unit, and raises and lowers the annular member 8 together with the opposing member 6 .

The opposing member elevating unit 61 is capable of moving the opposing member 6 to the barrier space division position, and the barrier space division position is used to make the substrate W, the opposing member 6 and the ring member 8 divide the barrier space SS (refer to FIG. 3 described later). ), the barrier space SS restricts the inflow of atmosphere from the external space. The compartmentalized position of the barrier space can also be located between the upper position and the lower position, and the compartmentalized position of the barrier space can also be the lower position.

FIG. 3 is a cross-sectional view of the periphery of the extended portion 66 of the opposing member 6 . As shown in FIG. 3 , the processing liquid discharge path 10 is defined by the extended portion 66 and the annular member 8 , and the processing liquid discharge path 10 is used to discharge the processing liquid from the isolation space SS to the external space OS. The external space OS includes a space above the opposing member 6 , a space below the lower surface of the substrate W, and a space radially outward from the opposing member 6 and the annular member 8 .

The extended portion 66 includes: a wide portion 80 , which is wider in the vertical direction than the circular plate portion 65 ; and a connecting portion 81 , which connects the circular plate portion 65 and the wide portion 80 . The width of the connecting portion 81 in the vertical direction becomes larger toward the outer direction in the radial direction. The connection part 81 has the inclined lower surface 81a, is connected to the opposing surface 6a, and inclines so that it may go downward as it goes radially outward. The wide portion 80 has a flat lower surface 80a, is connected to the inclined lower surface 81a, and extends flatly in the horizontal direction below the facing surface 6a.

The blocking space SS is a space between the facing surface 6 a of the disc portion 65 of the facing member 6 , the inclined lower surface 81 a of the extending portion 66 , and the upper surface of the substrate W. As shown in FIG. The isolation space SS is communicated with the external space OS through the treatment liquid discharge path 10 .

The annular member 8 has an upper surface, a lower surface, an end surface in the radially inner direction (the inner end surface 84 ), and an end surface in the radially outer direction. The upper surface and the lower surface of the ring-shaped member 8 are each ring-shaped when viewed from above. The upper surface of the ring-shaped member 8 has an annular guide surface 85 for guiding the processing liquid present in the peripheral portion of the upper surface of the substrate W further outside in the radial direction than the peripheral portion of the upper surface of the substrate W. direction; and the annular discharge path partition surface 86, which partitions the treatment liquid discharge path 10 together with the extended portion 66. The inner end surface 84 has a cylindrical shape extending in the vertical direction.

The guide surface 85 is connected to the upper end of the inner end surface 84 and the radially inner end of the discharge path dividing surface 86 . The guide surface 85 and the discharge path dividing surface 86 are respectively flat in the horizontal direction. The guide surface 85 is flush with the discharge path dividing surface 86 . That is, the guide surface 85 and the discharge path dividing surface 86 are formed on a single circular flat surface that is flat in the horizontal direction.

In the first embodiment, when the facing member 6 is located at the blocking space defining position, the annular member 8 faces the substrate W from the radially outer direction. When the facing member 6 is located at the blocking space dividing position, the upper end of the inner direction end surface 84 and the guide surface 85 are located at the same height as the upper surface of the substrate W. As shown in FIG.

The lower surface of the annular member 8 has an annular lower inclined surface 87 and an annular lower flat surface 88 . The lower inclined surface 87 is connected to the lower end of the end surface 84 in the inner direction, and is inclined so as to go downward toward the radially outer direction. The lower flat surface 88 is connected to the radially outer end of the lower inclined surface 87 and is flat in the horizontal direction.

The treatment liquid discharge path 10 is defined by a discharge path dividing surface 86 that is flat in the horizontal direction and a flat lower surface 80a. Therefore, the treatment liquid discharge path 10 is circular in plan view and extends in the horizontal direction.

The processing liquid discharge path 10 has an inflow port 10a for inflowing the processing liquid on the guide surface 85, and a discharge port 10b for discharging the processing liquid radially outward. The inlet 10 a is provided at the boundary between the guide surface 85 and the discharge path dividing surface 86 . The inflow port 10 a is located at the radially inner end of the treatment liquid discharge path 10 , and the discharge port 10 b is located at the radially outer end of the treatment liquid discharge path 10 .

The width of the barrier space SS in the vertical direction (barrier space width D1) is larger than the width of the gap G (gap width D2) in the horizontal direction between the peripheral edge of the substrate W and the inner end surface 84 of the ring member 8. The barrier space width D1 is larger than the width (discharge path width D3 ) of the treatment liquid discharge path 10 in the vertical direction.

Here, the barrier space width D1 includes the distance between the facing surface 6 a and the upper surface of the substrate W in the vertical direction and the distance between the inclined lower surface 81 a and the guide surface 85 in the vertical direction. Therefore, in the boundary between the guide surface 85 and the discharge path dividing surface 86, the barrier space width D1 is equal to the discharge path width D3. However, the barrier space width D1 is larger than the discharge path width D3 in most places in plan view, and the average value of the barrier space width D1 is larger than the discharge path width D3.

The distance between the facing surface 6 a and the upper surface of the substrate W in the vertical direction is, for example, 10 mm. The gap width D2 and the discharge path width D3 are each 1 mm, for example. That is, since the gap width D2 and the discharge path width D3 are much smaller than the barrier space width D1, the inflow of atmosphere from the external space OS is restricted.

The connecting member 9 is provided in the processing liquid discharge path 10 and is connected to the flat lower surface 80 a of the wide portion 80 of the extended portion 66 and the discharge path defining surface 86 of the annular member 8 . Fig. 4 is a cross-sectional view along line IV-IV shown in Fig. 2 . As shown in Figure 4, a plurality of connecting members 9 are arranged at equal intervals on the base The direction of rotation R of the plate W. In this embodiment, six connecting members 9 are provided. Each connecting member 9 has a cylindrical shape extending in the vertical direction.

Referring to Fig. 2 again, the processing cover 7 comprises: a plurality of protective covers 71, which catch the liquid scattered outwardly from the substrate W held by the rotation fixture 5; 71 leads to the liquid below.

In the present embodiment, an example in which two shield covers 71 (first shield shield 71A and second shield shield 71B) and two shields 72 (second shield 72A and second shield 72B) are provided is shown.

The first cover 72A and the second cover 72B each have a form of an annular groove opened upward.

The first protective cover 71A is arranged so as to surround the rotation base 21 . The second shield 71B (inner shield) is disposed so as to surround the spin base 21 further inward in the radial direction of the substrate W than the first shield 71A (outer shield).

The first protective cover 71A and the second protective cover 71B each have a substantially cylindrical shape, and the upper end of each protective cover 71 is inclined inward so as to be directed radially inward.

Specifically, the first protective cover 71A has: a first cylindrical portion 75A surrounding the opposing member 6 and the annular member 8 in plan view; and a first annular portion 76A extending from the first cylindrical portion 75A. The upper end extends radially inward. The first annular portion 76A is inclined relative to the horizontal direction so as to go upward as it goes radially inward.

The second protective cover 71B includes: a second cylindrical portion 75B, which is arranged in a direction further inward than the first cylindrical portion 75A, and surrounds the opposing member 6 and the annular member 8 in plan view; and a second annular portion. 76B extends radially inward from the upper end of the second cylindrical portion 75B. The second ring part 76B is from The lower side faces the first annular portion 76A. The second annular portion 76B is inclined relative to the horizontal direction so as to go upward as it goes radially inward.

The first cover 72A catches the processing liquid guided downward by the first protective cover 71A. The second cover 72B is integrally formed with the first protective cover 71A, and receives the processing liquid guided downward by the second protective cover 71B. The treatment liquid received by the first cover 72A is recovered by a first treatment liquid recovery path (not shown) connected to the lower end of the first cover 72A. The processing liquid received by the second cover 72B is recovered by a second processing liquid recovery path (not shown) connected to the lower end of the second cover 72B.

The processing unit 2 includes a shield elevating unit 74 that raises and lowers the first shield 71A and the second shield 71B, respectively. The shield elevating unit 74 raises and lowers the first shield 71A between a lower position and an upper position. The shield lifting unit 74 lifts the second shield 71B between a lower position and an upper position.

When both the first protective cover 71A and the second protective cover 71B are in the upper position, the processing liquid scattered from the substrate W is caught by the second protective cover 71B. When the second shield 71B is at the lower position and the first shield 71A is at the upper position, the processing liquid scattered from the substrate W is caught by the first shield 71A.

When both the first protective cover 71A and the second protective cover 71B are at the lower position and the opposing member 6 is at the upper position, the transfer robot CR can carry the substrate W into the chamber 4 and carry out the substrate W from the chamber 4 .

The protective cover lifting unit 74 includes, for example: a first ball screw mechanism (not shown), which is combined with the first protective cover 71A; a first motor (not shown), which provides driving force to the first ball screw mechanism; Two ball screw mechanisms (not shown) are combined with the second protective cover 71B; and a second motor (not shown) is used to provide driving force to the second ball screw mechanism. The hood lifting unit 74 is also called a hood lifter.

FIG. 5 is a block diagram showing the electrical configuration of main parts of the substrate processing apparatus 1 . The controller 3 is equipped with a microcomputer, and controls the control objects included in the substrate processing apparatus 1 according to a predetermined control program.

Specifically, the controller 3 includes a processor (CPU (Central Processing Unit; Central Processing Unit)) 3A and a memory 3B storing a control program. The controller 3 is configured such that the processor 3A executes a control program, thereby executing various controls for substrate processing.

In particular, the controller 3 is programmed to control the transfer robot IR, CR, the suction unit 27, the rotation motor 23, the protective cover lifting unit 74, the opposing member rotating unit 62, the opposing member lifting unit 61, the suction valve 28, the liquid medicine Valve 50 , upper cleaning fluid valve 51 , upper replacement fluid valve 52 , inert gas valve 53 , lower cleaning fluid valve 54 , and lower replacement fluid valve 55 .

The valve is controlled by the controller 3 , thereby controlling whether the processing liquid or the inert gas is ejected from the corresponding nozzle and the flow rate of the processing liquid or the inert gas ejected from the corresponding nozzle.

FIG. 6 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus 1 . FIG. 6 mainly shows the processing realized by the controller 3 executing programs. 7A to 7F are schematic diagrams for explaining the state of each process of the aforementioned substrate processing. The following mainly refers to FIG. 2 and FIG. 6 . Reference is made to FIGS. 7A to 7F as appropriate.

As shown in FIG. 6, in the substrate processing performed by the substrate processing apparatus 1, for example, a substrate loading step (step S1), a barrier space partitioning step (step S2), an atmosphere replacement step (step S3), and a pre-cleaning step (step S4) are performed. , a chemical solution supply process (step S5 ), a cleaning process (step S6 ), a replacement liquid supply process (step S7 ), a spin drying process (step S8 ), and a substrate unloading process (step S9 ).

First, as shown in FIG. 7A , an unprocessed substrate W is carried into the processing unit 2 from the carrier C by the transfer robot CR and transferred to the autorotation jig 5 (step S1 ). In this way, the substrate W is clamped by the rotation The tool 5 is held horizontally (substrate holding step). When carrying in the substrate W, the opposing member 6 retracts to the upper position, and the plurality of protective covers 71 retracts to the lower position.

The holding of the substrate W by the rotary jig 5 continues until the spin-drying step (step S8 ) is completed. The protective cover lifting unit 74 adjusts the height positions of the first protective cover 71A and the second protective cover 71B so that at least one protective cover 71 is located at the upper position during the period from the start of the substrate holding process to the end of the spin-drying process (step S8). .

Next, after the transfer robot CR retreats to the outside of the processing unit 2, a partition space division process for partitioning the partition space SS is performed (step S2). Specifically, as shown in FIG. 7B , the opposing member elevating unit 61 moves the opposing member 6 to the partitioned space division position. Thereby, the barrier space SS is partitioned by the substrate W, the opposing member 6 and the annular member 8 .

Next, the atmosphere replacement process (step S3) and the pre-cleaning process (step S4) are performed in parallel. The cleaning solution cleans the upper surface of the substrate W.

Specifically, the rotation motor 23 starts to rotate the substrate W. As shown in FIG. Next, the opposing member rotating unit 62 starts to rotate the opposing member 6 and the annular member 8 . The opposing member rotating unit 62 rotates the opposing member 6 and the annular member 8 and the substrate W synchronously (synchronous rotation process). The synchronous rotation of the substrate W, the opposing member 6 and the annular member 8 is continued until the spin-drying step (step S8 ) is completed.

Next, the inert gas valve 53 and the upper side cleaning liquid valve 51 are opened in a state where the opposing member 6 is located at the blocking space defining position. By opening the inert gas valve 53, the inert gas is ejected from the center nozzle 11 and the inert gas is supplied to the barrier space SS as shown in FIG. 7C. Opening the upper cleaning liquid valve 51 sprays the cleaning liquid such as DIW on the upper surface of the substrate W, that is, sprays the cleaning liquid such as DIW toward the substrate W from the central nozzle 11 as shown in FIG. 7C . The ejected cleaning liquid is attached to the central region of the upper surface of the substrate W. As shown in FIG.

The centrifugal force caused by the rotation of the substrate W acts on the cleaning liquid impinging on the upper surface of the substrate W. As shown in FIG. Therefore, the cleaning liquid spreads over the entire upper surface of the substrate W by the centrifugal force. The cleaning liquid that has reached the peripheral portion of the upper surface of the substrate W flows into the processing liquid discharge path 10 through the guide surface 85 . Then, the cleaning liquid that has flowed into the processing liquid discharge path 10 is discharged to the outside of the blocking space SS. The gap G is plugged by the cleaning liquid moving from the peripheral portion of the upper surface of the substrate W to the guide surface 85 .

When the inert gas is started to be supplied to the isolation space SS, the air in the isolation space SS is pushed out from the gap G and the treatment liquid discharge path 10 by the inert gas. The inert gas is continuously supplied to the isolation space SS, thereby completely exhausting the air in the isolation space SS, and filling the isolation space SS with the inert gas. That is, the atmosphere in the barrier space SS is replaced by the inert gas. The inert gas valve 53 is kept open until the spin-drying process (step S8) is completed.

In the pre-cleaning step, the gap G between the annular member 8 and the substrate W is plugged with the cleaning liquid. Therefore, movement of the inert gas through the gap G is suppressed. In addition, the cleaning liquid is discharged from the isolation space SS toward the external space OS through the processing liquid discharge path 10 . Therefore, unless such a large force as to push back the cleaning liquid in the processing liquid discharge path 10 is not applied, the atmosphere does not flow into the barrier space SS through the processing liquid discharge path 10 . On the other hand, since the inert gas is supplied to the isolated space SS, the air in the isolated space SS is discharged to the external space OS through the process liquid discharge path 10 so that the pressure in the isolated space SS does not rise excessively.

Therefore, the inflow of the atmosphere from the external space OS to the partition space SS can be further restricted, and the atmosphere in the partition space SS can be replaced with an inert gas.

In addition, although the state in which the processing liquid discharge path 10 is filled with the cleaning liquid is shown in FIG. It moves in the treatment liquid discharge path 10 (the same applies to the figures after FIG. 7D ).

Next, a chemical liquid supply process (step S5 ) is performed. The chemical liquid supply process (step S5 ) is to supply the chemical liquid to the upper surface of the substrate W so that the upper surface of the substrate W is processed by the chemical liquid.

Specifically, in a state where the SS in the barrier space is filled with inert gas, the upper cleaning liquid valve 51 is closed and the chemical liquid valve 50 is opened. As a result, spraying of the cleaning liquid from the central nozzle 11 is stopped, and chemical liquid such as DHF is sprayed from the central nozzle 11 toward the upper surface of the substrate W. As shown in FIG.

As shown in FIG. 7D , the ejected chemical solution is attached to the central region of the upper surface of the substrate W. As shown in FIG. The chemical liquid supply step is an example of the processing liquid supply step, and supplies the processing liquid to the upper surface of the substrate W in a state where the atmosphere in the barrier space SS has been replaced with an inert gas. The pre-cleaning step is performed before the processing liquid supply step.

The centrifugal force caused by the rotation of the substrate W acts on the chemical solution adhering to the upper surface of the substrate W. As shown in FIG. Therefore, the chemical solution spreads over the entire upper surface of the substrate W by the centrifugal force to replace the cleaning solution present on the upper surface of the substrate W. The chemical solution that has reached the peripheral portion of the upper surface of the substrate W flows into the processing solution discharge path 10 via the guide surface 85 . Next, the chemical solution is discharged to the outside of the partition space SS through the treatment liquid discharge path 10 (chemical solution discharge step, treatment liquid discharge step).

In addition, in the chemical solution supply process, the plurality of lower cleaning solution valves 54 are opened. Thereby, spraying of the washing liquid from the plurality of first lower surface nozzles 12 starts. The cleaning liquid sprayed from the plurality of first bottom surface nozzles 12 is attached to the bottom surface of the substrate W. As shown in FIG.

The centrifugal force caused by the rotation of the substrate W acts on the cleaning liquid attached to the lower surface of the substrate W. As shown in FIG. Thereby, the cleaning solution spreads to the peripheral portion of the lower surface of the substrate W. As shown in FIG. The lower surface of the substrate W is protected by spreading the cleaning liquid to the peripheral portion of the lower surface of the substrate W (lower surface protection step, protection liquid supply step). The cleaning solution functions as a protective solution for protecting the lower surface of the substrate W. As shown in FIG. Therefore, the first lower surface nozzle 12 functions as protection liquid supply means.

The cleaning solution that has reached the peripheral portion of the lower surface of the substrate W is guided to the lower surface of the ring-shaped member 8 and scattered from the ring-shaped member 8 radially outward.

Next, a cleaning step (step S6 ) is performed. The cleaning step (step S6 ) is to supply the cleaning solution to the upper surface of the substrate W and rinse the chemical solution present on the upper surface of the substrate W. Specifically, the chemical solution valve 50 is closed and the upper cleaning solution valve 51 is opened while the isolation space SS is filled with inert gas. Thereby, spraying of the chemical liquid from the center nozzle 11 is stopped, and a cleaning liquid such as DIW is sprayed from the center nozzle 11 toward the upper surface of the substrate W. As shown in FIG. 7E , the sprayed cleaning liquid is attached to the central area of the upper surface of the substrate W. As shown in FIG. The cleaning liquid supply process is an example of the process liquid supply process, and supplies the process liquid to the upper surface of the substrate W in a state where the atmosphere in the barrier space SS has been replaced with an inert gas.

The centrifugal force caused by the rotation of the substrate W acts on the cleaning liquid that has landed on the upper surface of the substrate W. As shown in FIG. Therefore, the cleaning solution spreads over the entire upper surface of the substrate W by the centrifugal force and replaces the chemical solution present on the upper surface of the substrate W. The cleaning liquid that has reached the peripheral portion of the upper surface of the substrate W flows into the processing liquid discharge path 10 through the guide surface 85 . Next, the cleaning liquid is discharged to the outside of the isolation space SS through the processing liquid discharge path 10 (cleaning liquid discharge step, processing liquid discharge step). During the washing step, the plurality of lower washing liquid valves 54 are kept open.

Next, a replacement liquid supply step (step S7 ) is performed. In the replacement liquid supply step (step S7 ), the replacement liquid is supplied to the upper surface of the substrate W to replace the cleaning liquid present on the upper surface of the substrate W with the replacement liquid. Specifically, the upper side cleaning fluid valve 51 is closed and the upper side replacement fluid valve 52 is opened while the isolation space SS is filled with inert gas. Thereby, spraying of the cleaning liquid from the center nozzle 11 is stopped, and a replacement liquid such as IPA is sprayed from the center nozzle 11 toward the upper surface of the substrate W. As shown in FIG. 7F , the ejected replacement liquid is deposited on the central region of the upper surface of the substrate W. As shown in FIG. The replacement liquid supply step is an example of the treatment liquid supply step, and is used to The processing liquid is supplied to the upper surface of the substrate W in a state where the atmosphere in the barrier space SS has been replaced with an inert gas.

The centrifugal force caused by the rotation of the substrate W acts on the replacement liquid that has landed on the upper surface of the substrate W. As shown in FIG. Therefore, the replacement liquid spreads over the entire upper surface of the substrate W by the centrifugal force to replace the cleaning liquid present on the upper surface of the substrate W. The replacement liquid that has reached the peripheral portion of the upper surface of the substrate W flows into the processing liquid discharge path 10 through the guide surface 85 . Next, the replacement liquid is discharged out of the isolation space SS through the processing liquid discharge path 10 (replacement liquid discharge step, processing liquid discharge step).

In the replacement liquid supply step, the plurality of lower cleaning liquid valves 54 are closed and the plurality of lower replacement liquid valves 55 are opened. As a result, the spraying of the washing liquid from the plurality of first lower surface nozzles 12 is stopped, and the spraying of replacement liquid such as IPA from the plurality of second lower surface nozzles 13 is started. The replacement liquid sprayed from the plurality of second lower surface nozzles 13 is attached to the lower surface of the substrate W. As shown in FIG.

The centrifugal force caused by the rotation of the substrate W acts on the replacement fluid attached to the lower surface of the substrate W. As shown in FIG. As a result, the replacement liquid system spreads to the peripheral portion of the lower surface of the substrate W (lower surface protection step, protection liquid supply step). The replacement liquid functions as a protective liquid for protecting the lower surface of the substrate W. Therefore, the second lower surface nozzle 13 functions as protection liquid supply means.

The replacement liquid system spreads to the peripheral portion of the lower surface of the substrate W, whereby the cleaning liquid existing on the lower surface of the substrate W is replaced. The replacement liquid that has reached the peripheral portion of the lower surface of the substrate W is guided to the lower surface of the annular member 8 and scattered radially outward from the annular member 8 .

Next, a spin-drying process is performed (step S8). Specifically, the upper replacement fluid valve 52 and the plurality of lower replacement fluid valves 55 are closed. Thereby, supply of the replacement liquid to the upper surface and the lower surface of the substrate W is stopped.

Next, the spin motor 23 accelerates the rotation of the substrate W to rotate the substrate W at a high speed. Thereby, a large centrifugal force acts on the replacement liquid remaining on the substrate W, and the replacement liquid on the substrate W is thrown off to the periphery of the substrate W. During the spin-drying process, the inert gas is continuously supplied to the isolation space SS, thereby promoting the evaporation of the replacement liquid.

Next, the autorotation motor 23 stops the rotation of the substrate W, thereby stopping the rotation of the opposing member 6 and the annular member 8 by the opposing member rotating unit 62 . The shield lifting unit 74 moves the first shield 71A and the second shield 71B to the lower position. Close the inert gas valve 53. Next, the opposing member elevating unit 61 moves the opposing member 6 to the upper position.

The transfer robot CR enters the processing unit 2, picks up the processed substrate W from the chuck pin 20 of the autorotating jig 5, and carries it out of the processing unit 2 (step S9). The substrate W is transferred from the transfer robot CR to the transfer robot IR, and is accommodated in the carrier C by the transfer robot IR.

Next, the state of the processing liquid in the vicinity of the annular member 8 during the substrate processing will be described. The state of the processing liquid in the vicinity of the annular member 8 is the same regardless of the type of the processing liquid. That is, the same description can be made for any one of the pre-cleaning step, the chemical solution supplying step, the cleaning step, and the replacement liquid supplying step.

FIG. 8 is a schematic diagram for explaining the state of the processing liquid in the vicinity of the annular member 8 when the processing liquid is discharged from the separation space SS. Force acts on the processing liquid present on the upper surface of the substrate W, and the ring-shaped member 8 is disposed close to the peripheral portion of the upper surface of the substrate W. As shown in FIG. Therefore, the processing liquid that has reached the peripheral portion of the upper surface of the substrate W does not fall downward from the gap G between the peripheral edge of the substrate W and the annular member 8, but moves from the peripheral portion of the upper surface of the substrate W. to the radially outer direction and reaches the guide surface 85 . That is, the guide surface 85 moves the processing liquid present on the upper surface of the substrate W further radially outward than the peripheral portion of the upper surface of the substrate W by the centrifugal force caused by the rotation of the substrate W.

The processing liquid that has moved on the guide surface 85 moves radially outward on the guide surface 85 and flows into the inflow port 10 a of the processing liquid discharge path 10 . The processing liquid that has flowed into the inflow port 10 a of the processing liquid discharge path 10 moves horizontally radially outward in the processing liquid discharge path 10 and is discharged from the discharge port 10 b.

Before the treatment liquid flows into the treatment liquid discharge path 10 , the treatment liquid on the guide surface 85 collides with the inclined lower surface 81 a of the extended portion 66 of the facing member 6 . In this case, a reverse flow (flow inward in the radial direction) occurs in the processing liquid on the guide surface 85, and the coating liquid 100 is formed by the generation of the reverse flow.

When backflow occurs, the processing liquid directed inward in the radial direction may collide with the processing liquid directed outward in the radial direction, and the processing liquid may be scattered in the barrier space SS. When the processing liquid scattered in the barrier space SS adheres to the upper surface of the substrate W again, particles are generated on the substrate W.

Unlike this embodiment, when the guide surface 85 is not provided, since the inlet 10a of the processing liquid discharge path 10 is arranged near the peripheral edge of the substrate W, the processing liquid is generated on the upper surface of the substrate W. Countercurrent in .

In this embodiment, the inlet 10a of the processing liquid discharge path 10 is provided at the boundary between the discharge path dividing surface 86 connected to the outer direction end of the guide surface 85 in the radial direction and the guide surface 85 . Therefore, even if the backflow in the processing liquid occurs, the place where the backflow occurs is not on the substrate W but on the guide surface 85 . Therefore, it is possible to suppress backflow in the processing liquid on the substrate W. FIG. Therefore, generation of particles on the upper surface of the substrate W can be suppressed.

In the substrate processing described above, the height positions of the first shield 71A and the second shield 71B are adjusted so that at least one shield 71 is positioned between the start of the substrate holding step and the end of the spin-drying step (step S8). up position. However, especially in the liquid medicine supply process (step S4), protection The cover 71 is preferably arranged as described below. FIG. 9 is a schematic diagram for explaining how the protective cover 71 catches the processing liquid during substrate processing.

Specifically, while the processing liquid (DHF) is being discharged from the discharge port 10b, the processing liquid discharge path 10 is positioned in the vertical direction between the radially inner end 76a of the first annular portion 76A of the first shield 71A and the second end 76a. Between the radially inner end 76b of the second annular portion 76B of the two protective covers 71B. Specifically, the shield elevating unit 74 moves the first shield 71A and the second shield 71B in the vertical direction so that the treatment liquid discharge path 10 is positioned between the radially inner end 76a of the first annular portion 76A. Between the radially inner side ends 76b of the second annular portion 76B (shroud moving step).

More specifically, the first shield 71A is moved to the upper position or the first shield 71A is maintained at the upper position. Thus, the first shield 71A moves in the vertical direction so that the radially inner end 76a of the first annular portion 76A is located above the discharge port 10b and below the upper end of the extending portion 66 . The second shield 71B moves in the vertical direction so that the radially inner end 76b of the second annular portion 76B is located below the discharge port 10b and above the lower end of the annular member 8 .

When the processing liquid is discharged from the discharge port 10 b of the processing liquid discharge path 10 , the first annular portion 76A of the first shield 71A is located above the discharge port 10 b in the vertical direction. Therefore, the treatment liquid discharged from the discharge port 10 b is received by the first cylindrical portion 75A through between the first annular portion 76A and the second annular portion 76B. The treatment liquid received by the first cylindrical portion 75A splashes back from the first cylindrical portion 75A.

The radially inner end 76b of the second annular portion 76B is located below the discharge port 10b in the vertical direction. Therefore, the treatment liquid splashed back from the first shield 71A does not move radially inward than the second shield 71B, but adheres to the second annular portion 76B from above or flows from the radial direction. The direction outward is attached to the second cylindrical portion 75B. Therefore, it is possible to suppress the processing liquid splashed back from the first shield 71A from adhering to the lower surface of the substrate W. As shown in FIG.

Since the radially inner end 76b of the second annular portion 76B is located above the lower end of the annular member 8 in the vertical direction, the processing liquid splashed back from the first shield 71A can be suppressed from flowing from the second annular portion. The gap between 76B and the annular member 8 moves radially inward.

In addition, the lower surface of the substrate W is protected by a protection liquid (DIW). Therefore, the lower surface of the substrate W can be protected from the mist of the processing liquid floating near the lower surface of the substrate W or the like. Furthermore, while the processing liquid is ejected from the discharge port 10b, since the radially inner end 76b of the second annular portion 76B is located below the discharge port 10b and above the lower end of the annular member 8, it is possible to The second protective cover 71B catches the protective liquid discharged from the lower surface of the substrate W to the outer direction. That is, the processing liquid discharged from the upper surface of the substrate W can be caught by the first protective cover 71A, and the protective liquid discharged from the lower surface of the substrate W outward can be caught by the second protective cover 71B. Therefore, the treatment liquid and the protection liquid can be recovered separately while avoiding mixing of the treatment liquid and the protection liquid.

The protective liquid moves radially outward by the centrifugal force and reaches the lower inclined surface 87 of the annular member 8 from the lower surface of the substrate W. The lower inclined surface 87 is inclined so as to go downward as it goes radially outward.

Therefore, the protective liquid is scattered from the annular member 8 toward the direction along the lower inclined surface 87 , that is, obliquely downward, and is caught by the second cylindrical portion 75B of the second shield 71B. Therefore, it is possible to suppress scattering of the protective liquid from obliquely upward. As a result, it is possible to suppress entry of the treatment liquid scattered obliquely upward between the first annular portion 76A of the first shield 71A and the second annular portion 76B of the second shield 71B.

According to the first embodiment, the blocking space SS is partitioned by the substrate W, the facing member 6 and the ring member 8 by moving the facing member 6 together with the ring member 8 to the partitioning position. exist By supplying the inert gas toward the upper surface of the substrate W while the barrier space SS is formed, the atmosphere in the barrier space SS can be replaced with the inert gas. Thereby, the oxygen concentration in the barrier space SS can be reduced, that is, the oxygen concentration of the atmosphere near the upper surface of the substrate W can be reduced.

The barrier space SS restricts the inflow of atmosphere from the external space OS. Therefore, when the atmosphere in the isolation space SS is replaced with the inert gas at once, it is easy to maintain a state in which the oxygen concentration in the atmosphere in the isolation space SS has been reduced.

By supplying the processing liquid to the upper surface of the substrate W in a state where the atmosphere in the barrier space SS has been replaced with an inert gas, the upper surface of the substrate W can be processed with the processing liquid while suppressing an increase in the oxygen concentration in the processing liquid. .

The processing liquid supplied to the upper surface of the substrate W moves toward the peripheral portion of the upper surface of the substrate W by centrifugal force. The processing liquid that has reached the peripheral portion of the upper surface of the substrate W moves on the guide surface 85 of the annular member 8 without scattering from the substrate W. The processing liquid existing on the guide surface 85 is discharged to the outside of the barrier space SS through the processing liquid discharge path 10 . Since the guide surface 85 exists between the peripheral portion of the substrate W and the processing liquid discharge path 10 , the peripheral portion of the substrate W is sufficiently separated from the extended portion 66 of the opposing member 6 . Therefore, the processing liquid discharged from the upper surface of the substrate W can be prevented from splashing back from the facing member 6 and adhering to the upper surface of the substrate W again. Even if it is assumed that the processing liquid discharged from the upper surface of the substrate W splashes back from the opposing member 6, most of the splashed processing liquid will adhere to the guide surface located radially outward from the upper surface of the substrate W. 85. Therefore, generation of particles on the upper surface of the substrate W can be suppressed.

From the above results, the oxygen concentration in the atmosphere near the upper surface of the substrate W can be reduced, and the generation of fine particles on the upper surface of the substrate W can be suppressed.

In addition, unlike the first embodiment, when the peripheral portion of the upper surface of the substrate W is not sufficiently close to the annular member 8, the processing liquid is not only discharged from the guide surface 85 and the processing liquid discharge path 10 It will also be discharged from the gap G. In this way, the processing liquid on the guide surface 85 may disperse and become droplets, splash from the guide surface 85 and adhere to the substrate W again. In the first embodiment, since the gap width D2 is sufficiently small and the peripheral portion of the upper surface of the substrate W is sufficiently close to the annular member 8, the processing liquid can move from the upper surface of the substrate W to the Guide surface 85 . Therefore, generation of fine particles can be suppressed.

According to the first embodiment, the discharge path width D3 is smaller than the barrier space width D1. Therefore, the flow rate of the fluid that can pass through the treatment liquid discharge path 10 is relatively small. Therefore, it is possible to suppress the inflow of the atmosphere outside the barrier space SS through the process liquid discharge channel 10 while the process liquid is discharged out of the barrier space SS through the process liquid discharge channel 10 . Therefore, by supplying the processing liquid to the upper surface of the substrate W in a state where the atmosphere in the barrier space SS has been replaced with an inert gas, the substrate W can be processed by the processing liquid while suppressing an increase in the oxygen concentration in the processing liquid. upper surface.

In the first embodiment, the inlet 10a of the processing liquid discharge path 10 is provided at the boundary between the discharge path defining surface 86 and the guide surface 85 connected to the outer direction end of the guide surface 85 in the radial direction. Therefore, even if the backflow in the processing liquid occurs, the place where the backflow occurs is not on the substrate W but on the guide surface 85 . Therefore, it is possible to suppress backflow in the processing liquid on the substrate W. FIG. Therefore, generation of particles on the upper surface of the substrate W can be suppressed.

Unlike this embodiment, a step may be provided between the guide surface 85 and the discharge path dividing surface 86 . Even in such a case, re-adhesion of the treatment liquid can be suppressed compared to a configuration in which the guide surface 85 is not provided. However, there is a possibility that the treatment liquid splashed due to the level difference may adhere to the upper surface of the substrate W again. In this way, particles may be generated on the upper surface of the substrate W. As shown in FIG.

Therefore, according to the first embodiment, the annular member 8 has the discharge path defining surface 86 , and the discharge path defining surface 86 defines the treatment liquid discharge path 10 together with the extended portion 66 . The discharge path defining surface 86 and the guide surface 85 are formed on a single flat surface that is flat in the horizontal direction. Therefore, it is possible to guide The processing liquid flowing on the introduction surface 85 smoothly flows into the processing liquid discharge path 10 . Therefore, it is possible to suppress scattering of the processing liquid in the barrier space SS, and it is possible to suppress the generation of fine particles due to the scattering of the processing liquid.

In the case where the difference between the rotational speed of the substrate W and the rotational speeds of the opposing member 6 and the annular member 8 is large, there is a possibility that the airflow in the barrier space SS is disturbed. When the air flow is disturbed, the upper surface of the substrate W is partially exposed and the processing liquid is scattered in the isolation space SS because the air flow causes a force to act on the processing liquid on the upper surface of the substrate W. According to the first embodiment, the substrate W for partitioning the barrier space SS, the annular member 8 and the opposing member 6 rotate synchronously. Therefore, it is possible to suppress the turbulence of the airflow from being generated in the barrier space SS.

In the first embodiment, the pre-cleaning process is performed, whereby the gap G is plugged with the cleaning liquid. Therefore, when the chemical solution supply process is started after the pre-cleaning process, the state where the gap G is blocked by the cleaning liquid is maintained until the chemical solution reaches the vicinity of the gap G. FIG. Therefore, the inflow of air through the gap G is restricted from the start of supplying the medical solution. Therefore, the oxygen concentration in the barrier space SS is lowered when the chemical solution is supplied.

In addition, in the subsequent cleaning step and replacement liquid supply step, the gap G is also plugged with the cleaning liquid and the replacement liquid, respectively. Therefore, inflow of air from the gap G is suppressed while the processing liquid is supplied to the upper surface of the substrate W. As shown in FIG.

Unlike the first embodiment, in the structure in which the facing member 6 is not provided, the ring-shaped member 8 does not rotate. Therefore, there is a possibility that the processing liquid moved radially outward from the peripheral edge of the substrate W may remain on the guide surface 85 . There is a possibility that particles may be generated on the substrate W due to the process liquid remaining on the guide surface 85 being scattered into the atmosphere.

Therefore, in the first embodiment, since the annular member 8 is connected to the opposing member 6 , the annular member 8 can be rotated together with the opposing member 6 when the processing liquid on the substrate W is removed. Therefore, since the processing liquid is less likely to remain on the guide surface 85 , particles are less likely to be generated on the substrate W. As shown in FIG. In addition, to A plurality of connecting members 9 connecting the opposing member 6 and the annular member 8 are provided in the treatment liquid discharge path 10 . Therefore, in the case where the processing liquid colliding with the connecting member 9 is splashed back, the splashed processing liquid is less likely to adhere to the substrate, as compared with the configuration in which the connecting member 9 is provided radially inward of the processing liquid discharge path 10 the upper surface of W.

10A and 10B are schematic diagrams illustrating other examples of substrate processing. For convenience of description, illustration of the connecting member 9 is omitted in FIGS. 10A and 10B . As shown in FIG. 10B , in the substrate processing of this other example, the position of the opposing member 6 when the upper end portion of the end surface 84 in the inner direction of the annular member 8 is at the same height position as the upper surface of the substrate W is referred to as the first position. A compartmentalized location of the barrier space. The first barrier space division position is the same position as the barrier space division position shown in FIG. 3 .

As shown in FIG. 10A , in the substrate processing of this other example, the opposing member elevating unit 61 (see FIG. 2 ) arranges the opposing member 6 at the second barrier space division position in the processing liquid supply step.

The second barrier space dividing position is to define the barrier space by the substrate W, the facing member 6 and the ring member 8 in a state where the upper end portion of the end surface 84 in the inner direction of the ring member 8 is located above the upper surface of the substrate W. The position of the opposing member 6 at SS.

A processing liquid such as a chemical liquid is supplied from the center nozzle 11 toward the upper surface of the substrate W in a state where the opposing member 6 is positioned at the second barrier space defining position. Thereby, the processing liquid is received by the inner end surface 84 of the annular member 8 and the upper surface of the substrate W to form the processing liquid reservoir 101 (reservoir forming step).

Therefore, the upper surface of the substrate W is processed by the processing liquid in the liquid storage 101 . Therefore, the upper surface of the substrate W can be processed only by supplying the processing liquid in an amount required to form the liquid storage liquid 101 on the upper surface of the substrate W. Therefore, compared with the configuration in which the processing liquid supplied to the upper surface of the substrate W is discharged to the outside of the substrate W without being caught by the end surface 84 in the inner direction, the consumption of the processing liquid can be reduced. The location where the second barrier space is divided is also called the location where the liquid storage is formed.

Furthermore, as shown in FIG. 10B , after a predetermined time elapses after the liquid storage 101 is formed, the opposing member elevating unit 61 (see FIG. 2 ) moves the opposing member 6 to the first barrier space dividing position. That is, the upper end portion of the inner side end surface 84 of the ring member 8 is moved to the same height position as the upper surface of the substrate W. As shown in FIG. FIG. 10B shows the opposing member 6 and the ring-shaped member 8 when the opposing member 6 is located at the second compartmentalized position by a two-dot chain line.

By moving the facing member 6 to the first barrier space dividing position, the processing liquid existing on the upper surface of the substrate W is released from the liquid-catch state of the inner side end surface 84 . Therefore, the processing liquid is moved outward in the radial direction by the centrifugal force, and the liquid reservoir 101 is removed from the upper surface of the substrate W (reservoir removal step).

The processing liquid moved to the outer direction of the peripheral portion of the substrate W by the centrifugal force smoothly flows into the processing liquid discharge path 10 through the guide surface 85 (see FIG. 8 ). Therefore, generation of particles on the upper surface of the substrate W can be suppressed.

Next, a modified example of the substrate processing apparatus 1 of the first embodiment will be described. 11A and 11B are schematic diagrams for explaining a modification of the substrate processing apparatus 1 of the first embodiment. For convenience of description, illustration of the connection member 9 is omitted in FIGS. 11A and 11B .

As shown in FIG. 11A , in the annular member 8 according to the modified example of the first embodiment, the guide surface 85 is an inclined surface. The guide surface 85 of the modification is inclined so as to go upward as it goes radially outward. In addition, in the annular member 8 according to the modified example of the first embodiment, the lower inclined surface 87 is not provided, and the lower flat surface 88 is connected to the lower end of the inner side end surface 84 .

Furthermore, in this modified example, the boundary 6c between the flat lower surface 80a of the wide portion 80 of the opposing member 6 and the inclined lower surface 81a of the coupling portion 81 of the opposing member 6 is located at a lower position than the guide of the annular member 8 . The boundary 8 c between the guide surface 85 and the discharge path dividing surface 86 of the annular member 8 is further inward in the radial direction.

When the opposing member 6 is located at the blocking space dividing position, the upper end of the end surface 84 in the inner direction is located at the same height as the upper surface of the substrate W. As shown in FIG.

In addition, in this variation example, it is also clear that the barrier space width D1 is larger than the discharge path width D3 in most parts in plan view, and the average value of the barrier space width D1 is larger than the discharge path width D3.

In the substrate processing performed by the substrate processing apparatus 1 according to the first embodiment, a processing liquid such as a chemical liquid is supplied from the central nozzle 11 toward the upper surface of the substrate W while the opposing member 6 is positioned at the partitioned position. Thereby, as shown in FIG. 11A , the guide surface 85 of the annular member 8 and the upper surface of the substrate W catch the processing liquid to form a reservoir 101 of the processing liquid (reservoir forming step). Therefore, the upper surface of the substrate W is processed by the processing liquid in the liquid storage 101 . Therefore, the upper surface of the substrate W can be processed only by supplying the processing liquid in an amount required to form the liquid storage liquid 101 on the upper surface of the substrate W. Therefore, compared with the configuration in which the processing liquid supplied to the upper surface of the substrate W is discharged to the outside of the substrate W without being caught by the inclined guide surface 85 , the consumption of the processing liquid can be reduced.

Then, as shown in FIG. 11B , the rotation motor 23 accelerates the rotation of the substrate W after a predetermined time elapses after the formation of the liquid storage 101 (substrate acceleration step). Specifically, the rotation speed of the substrate W is changed from a predetermined reservoir formation speed (for example, 10 rpm) to a reservoir discharge speed (for example, 1000 rpm). In this modified example, the guide surface 85 is inclined so as to go upward as it goes radially outward. Therefore, by accelerating the rotation of the substrate W and applying centrifugal force to the liquid storage 101 , the processing liquid can be smoothly leaped up the guide surface 85 . Therefore, the processing liquid moves outward in the radial direction, and the reservoir liquid 101 is removed from the upper surface of the substrate W (reservoir removal step). The processing liquid that has jumped up the guide surface 85 flows into the processing liquid discharge path 10 smoothly. Therefore, generation of particles on the upper surface of the substrate W can be suppressed.

Here, when the boundary 6c between the flat lower surface 80a and the inclined lower surface 81a is located at a position overlapping with the boundary 8c between the guide surface 85 and the discharge path dividing surface 86 in plan view, and the boundary 6c is closer than the boundary 8c. In the case of being located further inward in the radial direction, there is a possibility that the treatment liquid jumping up the guide surface 85 may collide with the inclined lower surface 81a. In this way, there is a possibility that the processing liquid is clogged and a reverse flow may occur in the processing liquid on the guide surface 85, and this reverse flow may cause generation of particles.

As shown in FIG. 11A and FIG. 11B , as long as the boundary 6c between the flat lower surface 80a and the inclined lower surface 81a is located further inward in the radial direction than the boundary 8c between the guide surface 85 and the discharge path dividing surface 86, Then the processing liquid jumping up the guide surface 85 does not collide with the inclined lower surface 81a but collides with the flat lower surface 80a. In this way, the treatment liquid flows smoothly into the treatment liquid discharge path 10 without clogging.

[Second Embodiment]

12 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit 2P included in a substrate processing apparatus 1 according to a second embodiment of the present invention. In FIG. 12 and FIG. 13 described later, components equivalent to those shown in FIGS. 1 to 11B described above are denoted by the same reference numerals as in FIG. 1 and the like, and explanations thereof are omitted.

In the processing unit 2P of the second embodiment, the form of holding the substrate is different from that of the processing unit 2 (see FIG. 2 ) of the first embodiment.

Specifically, the rotary jig 5P of the processing unit 2P does not include the suction unit 27 but includes a plurality of jig pins 20 for gripping the periphery of the substrate W. As shown in FIG. The plurality of jig pins 20 are arranged on the upper surface of the spin base 21 at intervals in the circumferential direction (rotational direction R). A plurality of clamp pins 20 can be opened and closed between a closed state and an open state. The closed state is a state in which the plurality of clamp pins 20 are in contact with the peripheral end of the substrate W and holds the substrate W. The open state is a state in which the plurality of clamp pins 20 This is the state that has retreated from the peripheral edge of the substrate W.

Furthermore, the processing unit 2P of the second embodiment does not include a plurality of first lower surface nozzles 12 and a plurality of second lower surface nozzles 13 , but includes a lower surface nozzle 14 .

The lower surface nozzle 14 is inserted into the hollow rotating shaft 22 and the through-hole 21 a opened in the upper surface central part of the spin base 21 . The discharge port 14 a of the lower surface nozzle 14 is exposed from the upper surface of the spin base 21 . The ejection port 14a of the lower surface nozzle 14 faces the central region of the lower surface (lower surface) of the substrate W from below.

One end of a common pipe 46 is connected to the lower nozzle 14 , and the common pipe 46 guides the cleaning liquid and the replacement liquid to the lower nozzle 14 in common. The other end of the common piping 46 is connected to a lower cleaning liquid piping 47 and a lower replacement liquid piping 48. The lower cleaning liquid piping 47 guides the cleaning liquid to the common piping 46, and the lower replacement liquid piping 48 directs the replacement liquid to the common piping 46. Lead to the common piping 46.

When the lower cleaning liquid valve 57 interposed between the lower cleaning liquid piping 47 is opened, the cleaning liquid is sprayed from the lower surface nozzle 14 toward the center region of the lower surface of the substrate W in a continuous flow. When the lower replacement liquid valve 58 interposed between the lower replacement liquid piping 48 is opened, the replacement liquid is sprayed from the lower surface nozzle 14 toward the central region of the lower surface of the substrate W in a continuous flow.

The lower side gas flow path 90 is formed by the space between the lower surface nozzle 14 and the through hole 21 a of the spin base 21 . The lower gas channel 90 is connected to the inert gas pipe 49 , and the inert gas pipe 49 is inserted into the space between the inner peripheral surface of the rotating shaft 22 and the lower surface nozzle 14 . When the inert gas valve 59 interposed between the inert gas piping 49 is opened, the inert gas is ejected from the lower gas channel 90 toward a portion around the center of the lower surface of the substrate W.

The lower surface nozzle 14 is an example of a lower cleaning liquid supply unit, and supplies the cleaning liquid to the lower surface of the substrate W. As shown in FIG. In addition, the lower surface nozzle 14 is an example of the lower side replacement liquid supply unit, and is used for The lower surface of the substrate W is supplied with a replacement liquid. In addition, the lower surface nozzle 14 is an example of lower inert gas supply means, and supplies inert gas to the lower surface of the substrate W. As shown in FIG.

The facing member 6, the ring-shaped member 8, and the connecting member 9 of the processing unit 2P have substantially the same features as the facing member 6, the ring-shaped member 8, and the connecting member 9 of the processing unit 2 of the first embodiment. shape. However, the structure of the annular member 8 included in the processing unit 2P is slightly different from the annular member 8 of the first embodiment. FIG. 13 is a view of the periphery of the annular member 8 included in the processing unit 2P of the second embodiment viewed from above.

A plurality of recesses 8 a are formed on the annular member 8 included in the processing unit 2P, and the plurality of recesses 8 a are used to avoid interference with the plurality of jig pins 20 . The plurality of recesses 8 a are provided in the same number as the plurality of jig pins 20 , and are arranged in the rotation direction R at the same interval as the interval between the jig pins 20 .

In the substrate processing apparatus 1 of the second embodiment, the same substrate processing as that of the substrate processing apparatus 1 of the first embodiment can be performed (see FIGS. 6 to 9 ). However, in the substrate processing performed by the substrate processing apparatus 1 according to the second embodiment, the lower surface of the substrate W is protected by spraying the cleaning liquid or the replacement liquid from the lower surface nozzle 14 (lower surface protection step, protection liquid supply step). In the second embodiment, the lower surface nozzle 14 functions as protection liquid supply means. In addition, an inert gas may be blown toward the lower surface of the substrate W, whereby the atmosphere in the space between the lower surface of the substrate W and the spin base 21 is replaced by the inert gas. In this case, the inflow of air (oxygen) toward the barrier space SS can be more suppressed.

According to the second embodiment, the same effect as that of the first embodiment is achieved. In addition, the substrate processing shown in FIGS. 10A and 10B can also be performed in the second embodiment, and the modified example shown in FIGS. 11A and 11B can also be applied.

[Third Embodiment]

14 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit 2Q included in a substrate processing apparatus 1 according to a third embodiment of the present invention. In FIG. 14 and FIGS. 15 to 17 described later, components equivalent to those shown in FIGS. 1 to 13 described above are denoted by the same reference numerals as in FIG. 1 , and descriptions thereof are omitted.

In the processing unit 2Q of the third embodiment, the extending portion 66Q of the facing member 6Q and the annular member 8Q are different from the processing unit 2 (see FIG. 2 ) of the first embodiment. 15 is a cross-sectional view of the periphery of the opposing member 6Q and the annular member 8Q included in the processing unit 2Q according to the third embodiment.

The extended portion 66Q of the facing member 6Q of the third embodiment includes: a wide portion 110 having a width in the vertical direction larger than that of the circular plate portion 65; and a connecting portion 111 connecting the circular plate portion 65 and the wide portion. 110. The width of the connecting portion 111 in the vertical direction increases as it goes radially outward.

The connecting portion 111 has an inclined lower surface 111 a connected to the facing surface 6 a and inclined downward as it goes radially outward. The wide portion 110 has: a vertical cylindrical surface 110a connected to the inclined lower surface 111a and extending vertically; and a flat lower surface 110b connected to the lower end of the vertical cylindrical surface 110a and flat in the horizontal direction.

The guide surface 85 is connected to the upper end of the inner end surface 84 and the radially inner end of the discharge path dividing surface 86 . The guide surface 85 is flat in the horizontal direction. The discharge path dividing surface 86 includes: an inclined dividing surface 86A, which is connected to the radially outer end of the guide surface 85, and which is inclined downward as it goes radially outward; and a vertical dividing surface 86B, which is It is connected to the radially outer direction end of 86A of inclined division surfaces, and extends in the vertical direction.

The treatment liquid discharge path 10Q of the third embodiment includes: an inclined discharge path 120 connected to the barrier space SS and partitioned by the inclined lower surface 111a and the inclined partition surface 86A; and a vertical discharge path 121 connected to the inclined discharge path 120, and is divided by the vertical cylindrical surface 110a and the vertical surface 86B zoning. The inflow port 10Qa of the treatment liquid discharge path 10Q is provided at the radially inner end of the inclined discharge path 120 . The discharge port 10Qb of the treatment liquid discharge path 10Q is provided at the lower end of the vertical discharge path 121 .

The width of the treatment liquid discharge path 10Q (discharge path width D3 ) is the distance between the inclined dividing surface 86A and the inclined lower surface 111 a or the distance between the vertical dividing surface 86B and the vertical cylindrical surface 110 a. Also in the third embodiment, it can be seen that the barrier space width D1 is larger than the discharge path width D3 in most parts in plan view, and the average value of the barrier space width D1 is larger than the discharge path width D3.

In the third embodiment, the upper end of the inner side end surface 84 and the guide surface 85 are located at the same height as the upper surface of the substrate W when the facing member 6 is located at the blocking space dividing position.

In the substrate processing apparatus 1 of the third embodiment, the same substrate processing as that of the substrate processing apparatus 1 of the first embodiment can be performed (see FIGS. 6 to 7F ).

Next, the state when the processing liquid is discharged from the barrier space SS in the substrate processing according to the third embodiment will be described. FIG. 16 is a schematic diagram for explaining substrate processing using the substrate processing apparatus 1 according to the third embodiment.

Centrifugal force acts on the processing liquid present on the upper surface of the substrate W, and the annular member 8Q is disposed close to the peripheral portion of the upper surface of the substrate W. Therefore, the processing liquid that has reached the peripheral portion of the upper surface of the substrate W does not fall downward from the gap G between the peripheral edge of the substrate W and the annular member 8Q, but moves from the peripheral portion of the upper surface of the substrate W. to the radially outer direction and reaches the guide surface 85 . That is, the guide surface 85 moves the processing liquid present on the upper surface of the substrate W further radially outward than the peripheral portion of the upper surface of the substrate W by the centrifugal force caused by the rotation of the substrate W. The gap G is plugged with the treatment liquid.

The processing liquid that has moved on the guide surface 85 moves radially outward on the guide surface 85 and flows into the inflow port 10Qa of the processing liquid discharge path 10Q. The processing liquid flowing into the inflow port 10Qa of the processing liquid discharge path 10Q moves radially outward in the inclined discharge path 120 and then moves downward in the vertical discharge path 121 . Thereafter, the treatment liquid is discharged from the discharge port 10Qb.

The processing liquid on the guide surface 85 may collide with the inclined lower surface 111 a of the extended portion 66 of the facing member 6Q. In this case, a reverse flow (flow inward in the radial direction) occurs in the processing liquid on the guide surface 85, and the coating liquid 100 is formed by the generation of the reverse flow.

In the third embodiment, the inlet 10Qa of the treatment liquid discharge path 10Q is provided at the boundary between the discharge path defining surface 86Q connected to the outer direction end of the guide surface 85 in the radial direction and the guide surface 85 . Therefore, even if the backflow in the processing liquid occurs, the place where the backflow occurs is not on the substrate W but on the guide surface 85 . Therefore, it is possible to suppress backflow in the processing liquid of the substrate W. FIG. Therefore, generation of particles on the upper surface of the substrate W can be suppressed. Furthermore, according to the third embodiment, the same effect as that of the first embodiment is achieved.

Similar to the first embodiment, another example of substrate processing can also be performed in the third embodiment. FIG. 17 is a schematic diagram illustrating another example of substrate processing using the substrate processing apparatus 1 of the third embodiment. In the substrate processing of another example, the position of the opposing member 6Q shown in FIG. 16 described above is referred to as a first barrier space dividing position. When the opposing member 6Q is located at the first barrier space defining position, the upper end portion of the inner end surface 84 of the annular member 8Q is located at the same height position as the upper surface of the substrate W.

As shown in FIG. 17 , in the processing liquid supply process, the opposing member elevating unit 61 (see FIG. 14 ) arranges the opposing member 6Q at the second barrier space division position. The second barrier space division position is a state where the upper end portion of the inner direction end surface 84 of the annular member 8Q is located above the upper surface of the substrate W. The position of the facing member 6Q when the blocking space SS is partitioned by the substrate W, the facing member 6Q, and the annular member 8Q.

With the opposing member 6Q positioned at the second barrier space defining position, a processing liquid such as a chemical liquid is supplied from the center nozzle 11 (see FIG. 14 ) toward the upper surface of the substrate W. Thus, the processing liquid reservoir 101 is formed by contacting the processing liquid with the inner end surface 84 of the annular member 8Q and the upper surface of the substrate W (reservoir forming step). Therefore, the upper surface of the substrate W is processed by the processing liquid in the liquid storage 101 . Therefore, the upper surface of the substrate W can be processed only by supplying the processing liquid in an amount required to form the liquid storage liquid 101 on the upper surface of the substrate W. Therefore, compared with the configuration in which the processing liquid supplied to the upper surface of the substrate W is discharged to the outside of the substrate W without being caught by the end surface 84 in the inner direction, the consumption of the processing liquid can be reduced.

Then, the opposing member elevating unit 61 moves the opposing member 6Q to the first barrier space dividing position after a predetermined time elapses after the formation of the liquid storage 101 . That is, the upper end portion of the inner side end surface 84 of the annular member 8Q is moved to the same height position as the upper surface of the substrate W (see FIG. 16 ). Thereby, the processing liquid existing on the upper surface of the substrate W is released from the liquid-clamped state of the inner side end surface 84 . Therefore, the processing liquid is moved outward in the radial direction by the centrifugal force, and the liquid reservoir 101 is removed from the upper surface of the substrate W (reservoir removal step).

The processing liquid moved to the outer direction of the peripheral portion of the substrate W by the centrifugal force smoothly flows into the processing liquid discharge path 10 through the guide surface 85 (see FIG. 16 ). Therefore, generation of particles on the upper surface of the substrate W can be suppressed.

[Fourth Embodiment]

18 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit 2R included in a substrate processing apparatus 1 according to a fourth embodiment of the present invention. In FIG. 18 , components equivalent to those shown in FIGS. 1 to 17 described above are denoted by the same reference numerals as those in FIG. 1 , and explanations thereof are omitted.

In the processing unit 2R of the fourth embodiment, the form of substrate holding is different from that of the processing unit 2Q of the third embodiment (see FIG. 14 ). The processing unit 2R of the fourth embodiment is configured by combining the facing member 6Q and the ring-shaped member 8Q of the third embodiment and the rotation jig 5P of the second embodiment.

In the substrate processing apparatus 1 of the fourth embodiment, the same substrate processing as that of the substrate processing apparatus 1 of the first embodiment can be performed (see FIGS. 6 to 7F ). The state when the treatment liquid is discharged from the barrier space SS is the same as that described in the third embodiment (see FIG. 16 ).

In the substrate processing performed by the substrate processing apparatus 1 according to the fourth embodiment, the lower surface of the substrate W is protected by spraying cleaning liquid or replacement liquid from the lower surface nozzle 14 (lower surface protection step, protection liquid supply step). In this case, the lower surface nozzle 14 functions as protection liquid supply means.

In addition, an inert gas may be blown toward the lower surface of the substrate W, whereby the atmosphere in the space between the lower surface of the substrate W and the spin base 21 is replaced by the inert gas. In this case, the inflow of oxygen toward the barrier space SS can be more suppressed.

According to the fourth embodiment, the same effect as that of the first embodiment is achieved. In addition, as in the third embodiment, another example of substrate processing shown in FIG. 17 can be performed in the fourth embodiment.

[Fifth Embodiment]

19 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in a substrate processing apparatus according to a fifth embodiment of the present invention. In FIG. 19 , components equivalent to those shown in FIGS. 1 to 18 described above are denoted by the same reference numerals as in FIG. 1 and the like, and description thereof will be omitted.

The difference between the processing unit 2S of the fifth embodiment and the processing unit 2R of the fourth embodiment (see FIG. 18 ) lies in the lifting and rotating structures of the opposing member 6Q and the ring member 8Q. The opposing member 6Q and the annular member 8Q of the processing unit 2S of the fifth embodiment are raised and lowered by the support member 131 And lift, and rotate by rotation motor 23. The supporting member elevating unit 131 is a unit for lifting the supporting member 130, and the supporting member 130 is used for vertically supporting the opposing member 6Q.

The difference between the processing unit 2S of the fifth embodiment and the processing unit 2R of the fourth embodiment will be described in detail below.

The opposing member 6Q of the fifth embodiment further includes a plurality of flange portions 63 extending horizontally from the upper end of the hollow shaft 60 . The facing member 6Q can be fitted to the rotation base 21 by magnetic force, for example. Specifically, the plurality of first fitting portions 135 provided on the annular member 8Q and the plurality of second fitting portions 136 provided on the rotation base 21 are attracted to each other by magnetic force and are concave-convex fitted.

The plurality of first fitting portions 135 extend downward from the lower surface of the annular member 8Q. The plurality of first fitting portions 135 are arranged at intervals in the circumferential direction around the rotation axis A1 (rotation direction R). The plurality of second fitting portions 136 are arranged at intervals from each other in the circumferential direction around the rotation axis A1 (rotation direction R) and on the spin base 21 at a radially outer direction than the plurality of jig pins 20 . surface.

When each first fitting portion 135 of the ring-shaped member 8Q fits with the corresponding second fitting portion 136 of the rotation base 21, the opposing member 6Q and the ring-shaped member 8Q can rotate integrally with the rotation base 21. . The autorotation motor 23 also functions as an opposing member rotating unit for rotating the opposing member 6Q and the annular member 8Q around the rotation axis A1. When the facing member 6Q is located at the blocking space partitioning position, the annular member 8Q is fitted to the rotation base 21 (refer to the two-dot chain line in FIG. 19 ).

The supporting member 130 includes: an opposing member supporting part 132, which supports the opposing member 6Q; a nozzle supporting part 133, which is arranged above the opposing member supporting part 132, to support the housing 30 of the central nozzle 11; And the wall portion 134 connects the opposing member support portion 132 and the nozzle support portion 133 and extends in the vertical direction.

The opposing member support portion 132 supports (the flange portion 63 of) the opposing member 6Q from below. A cylindrical portion insertion hole 132 a is formed in a central portion of the facing member support portion 132 , and the hollow shaft 60 is inserted through the cylindrical portion insertion hole 132 a.

A positioning hole 63 a is formed in each flange portion 63 , and the positioning hole 63 a penetrates the flange portion 63 in the vertical direction. A fitting protrusion 132 b is formed on the opposing component support portion 132 , and the fitting protrusion 132 b can be fitted into the corresponding positioning hole 63 a of the flange portion 63 . The respective positioning holes 63 a are fitted by the corresponding fitting protrusions 132 b , whereby the facing member 6Q and the ring member 8Q are positioned in the rotational direction R relative to the support member 130 .

The support member elevating unit 131 includes, for example, a ball screw mechanism (not shown) that lifts the support member 130 , and an electric motor (not shown) that provides driving force to the ball screw mechanism. The supporting member lifting unit 131 is controlled by the controller 3 (refer to the chain line of two dots in FIG. 5 ).

The supporting member lifting unit 131 can make the supporting member 130 be located at a predetermined height position between the upper position (the position shown by the solid line in FIG. 19 ) and the lower position (the position shown by the chain line of two dots in FIG. 19 ). . The lower position is a position where the support member 130 is closest to the upper surface of the spin base 21 within the movable range of the support member 130 . The upper position is a position where the support member 130 is farthest from the upper surface of the rotation base 21 in the movable range of the support member 130 .

The supporting member 130 hangs and supports the opposing member 6Q when it is located at the upper position. The supporting member 130 is lifted up and down by the supporting member lifting unit 131, and passes through the fitting position between the upper position and the lower position.

The support member 130 descends from the upper position to the fitting position together with the opposing member 6Q and the ring member 8Q. When the support member 130 reaches the fitting position, the facing member 6Q and the ring member 8Q are transferred to the autorotation base 21 . When the support member 130 reaches below the fitting position, it will separate from the facing member 6Q.

When the support member 130 rises from the lower position and reaches the fitting position, the facing member 6Q and the ring-shaped member 8Q are received from the rotation base 21 . The support member 130 rises from the fitting position to the upper position together with the opposing member 6Q and the ring member 8Q.

In this way, the supporting member 130 is raised and lowered by the supporting member elevating unit 131 , whereby the opposing member 6Q and the annular member 8Q are raised and lowered relative to the rotation base 21 . Therefore, the support member raising and lowering unit 131 functions as an opposing member raising and lowering unit.

In the substrate processing apparatus 1 of the fifth embodiment, the same substrate processing as that of the substrate processing apparatus 1 of the fourth embodiment can be performed. However, in the substrate processing of the fifth embodiment, the atmosphere replacement step (step S3 ) to the spin-drying step (step S8). Therefore, when the processing liquid is supplied to the upper surface and the lower surface of the substrate W, the opposing member 6Q and the annular member 8Q can be surely rotated synchronously with the substrate W. FIG.

According to the configuration of the fifth embodiment, the same effect as that of the first embodiment is achieved.

[Other Embodiments]

The present invention is not limited to the embodiments described above, and may be further implemented in other forms.

For example, it can be applied to substrate treatment using a polymer layer forming liquid for forming a polymer layer on the upper surface of the substrate W as a treatment liquid, unlike the above-described embodiments. As a polymer layer forming liquid, the hydrophobizing agent for hydrophobizing the surface of the board|substrate W can be mentioned, for example. The polymer layer forming liquid is a liquid for reacting with the SiO ₂ film formed on the surface of the pattern on the surface of the substrate W and forming a sacrificial layer.

As the hydrophobizing agent, for example, a silicon-based hydrophobizing agent or a metal-based hydrophobizing agent can be used. The silicon-based hydrophobizing agent hydrophobizes silicon itself and silicon-containing compounds, and the metal-based hydrophobizing agent hydrophobizes the metal itself. And the hydrophobization of metal-containing compounds.

The metal-based hydrophobizing agent includes, for example, at least one of an organosilicon compound and an amine having a hydrophobic group. The silicon-based hydrophobizing agent is, for example, a silane coupling agent. The silane coupling agent system includes, for example, HMDS (hexamethyldisilazane; hexamethyldisilazane), TMS (tetramethylsilane; tetramethylsilane), fluorinated alkylchlorosilane (fluorinated alkylchlorosilane), alkyl disilazane (alkyl disilazane) and At least one of non-chlorine hydrophobizing agents. Chlorine-free hydrophobizing agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane (HMDS), tetramethyl Disilazane (tetramethyldisilazane), bis(dimethylamino)dimethylsilane (Bis(dimethylamino)dimethylsilane), N,N-dimethyltrimethylsilane (N,N-dimethylamino trimethylsilane), N- At least one of (trimethylsilyl) dimethylamine (N-(trimethylsilyl) dimethylamine) and organosilane (organosilane) compounds.

Since the polymer layer forming liquid is expensive, it is desired to reduce the consumption amount. It is effective to form the reservoir 101 of the polymer layer forming liquid on the upper surface of the substrate W and process the upper surface of the substrate W as in the above-described embodiments.

Moreover, in 1st Embodiment and 2nd Embodiment, the connection part 81 has the inclined lower surface 81a which inclines so that it may go downward as it goes toward the outer direction of a radial direction. However, the connecting portion 81 may not have an inclined lower surface 81a that is inclined downward as it goes radially outward, but may have an inclined lower surface 81a that is flush with the opposing surface 6a as shown by a two-dot chain line in FIG. 3 . lower surface. In this case In this case, the processing liquid on the guide surface 85 collides with the radially inner end surface 80b of the wide portion 80 of the extended portion 66 of the facing member 6 before flowing into the processing liquid discharge path 10, so it will be on the guide surface. Backflow occurs in the treatment liquid on the 85.

In addition, the coupling member 9 of the embodiment described above has a cylindrical shape extending in the vertical direction. Unlike the embodiment described above, as shown in FIG. 20 , each connection member 9 may be formed so as to be directed toward the downstream side RD in the rotation direction R of the substrate W as it goes radially outward in plan view.

When the substrate W is rotating, an airflow F (see FIG. 9 ) toward the downstream side RD in the rotation direction R is easily generated in the barrier space SS as it goes radially outward. As long as the connecting member 9 is formed so that it faces the downstream side RD in the rotation direction R of the substrate W as it goes radially outward in a plan view, the downstream side in the rotation direction R can be promoted as it goes radially outward. RD airflow. Therefore, the turbulence of the airflow can be further suppressed.

In addition, in the embodiment described above, although the connecting member 9 is arranged in the treatment liquid discharge path 10, the connecting member 9 may also be arranged in the isolation space SS; although not shown, the connecting member 9 is arranged in the isolation space In the case of SS, the connection member 9 is connected to the guide surface 85 and the inclined lower surface 81a.

Although the embodiments of the present invention have been described in detail, these embodiments are only specific examples for clarifying the technical content of the present invention. The scope of the patent application is limited.

The present invention corresponds to Japanese Patent Application No. 2019-133864 filed at the Japan Patent Office on July 19, 2019, and the entire contents of Japanese Patent Application No. 2019-133864 are cited and described in the present invention.

2: Processing unit

6: Opposite components

6a: opposite side

8: ring member

10: Treatment liquid discharge path

10a: Inflow port

10b: Outlet

65: Circular plate part

66: Extended setting department

80: wide section

80a: flat lower surface

81: Connection Department

81a: Inclined lower surface

85: Guide surface

86: Discharge path division surface

87: Lower sloped surface

88: Bottom flat surface

100: covered liquid

G: Gap

OS: external space

SS: barrier space

W: Substrate

Claims (19)

A substrate processing device, comprising: a substrate holding unit, which has a self-rotating base that is smaller than the substrate when viewed from above, and attracts the aforementioned substrate and makes the aforementioned self-rotating base hold the aforementioned substrate horizontally; a substrate rotating unit that keeps the aforementioned substrate The unit rotates around a vertical axis passing through the central portion of the substrate held by the substrate holding unit; the processing liquid supply unit supplies the processing liquid toward the upper surface of the substrate held by the substrate holding unit; the inert gas supply unit is An inert gas is supplied toward the upper surface of the aforementioned substrate held by the aforementioned substrate holding unit; the opposing member includes: a circular plate portion having an opposing surface, and the aforementioned opposing surface is connected to the aforementioned substrate held by the aforementioned substrate holding unit from above. The substrates are facing each other; and the extension part extends from the circular plate part toward the outer direction of the radial direction with the aforementioned vertical axis as the center; the ring-shaped member surrounds the aforementioned substrate held by the aforementioned substrate holding unit when viewed from above, and There is a guide surface on the upper surface, and the guide surface is opposed to the lower surface of the extended portion of the opposing member and guides the processing liquid present on the upper surface of the substrate held by the substrate holding unit to The outer direction in the radial direction than the peripheral portion of the aforementioned substrate; the connecting member is used to connect the aforementioned annular member and the aforementioned extended portion; the opposing member lifting unit is used to integrally lift the aforementioned opposing member and the aforementioned annular member; and The unit for rotating the opposing member is used to rotate the aforementioned opposing member around the aforementioned vertical axis; The aforementioned substrate held by the aforementioned substrate holding portion, the aforementioned facing member, and the aforementioned ring-shaped member are configured such that the aforementioned facing member and the aforementioned ring-shaped member are raised and lowered by the aforementioned facing member elevating unit, whereby the divisions from The blocking space for the inflow of external atmosphere; the aforementioned extending portion of the aforementioned opposing member and the aforementioned ring-shaped member are configured in such a way that: the aforementioned opposing member and the aforementioned annular member are lifted and lowered by the aforementioned opposing member elevating unit, thereby The treatment liquid discharge path is divided, and the treatment liquid discharge path is to discharge the treatment liquid present on the guide surface to the outside of the barrier space; when the treatment liquid is discharged from the guide surface, the substrate rotation unit is used The substrate held by the substrate holding unit is rotated, and the facing member rotating unit rotates the facing member and the annular member integrally, thereby treating the processing liquid present on the upper surface of the substrate held by the substrate holding unit. Centrifugal force acts to discharge the processing liquid existing on the upper surface of the substrate held by the substrate holding unit from the processing liquid discharge path. The substrate processing apparatus according to claim 1, wherein the width of the treatment liquid discharge path is smaller than the width of the barrier space in the vertical direction. The substrate processing apparatus as described in claim 1 or 2, wherein the annular member has a discharge path dividing surface, which is connected to the outer direction end of the aforementioned guide surface in the radial direction, and defines the treatment liquid discharge path. ; The aforementioned process liquid discharge path has an inlet at the junction between the aforementioned guide surface and the aforementioned discharge path partitioning surface. The substrate processing apparatus according to claim 3, wherein the discharge path defining surface and the guiding surface are formed as a single flat surface that is flat in the horizontal direction. The substrate processing apparatus according to claim 1 or 2, wherein each of the connecting members is formed in such a manner that when viewed from above, it rotates toward the substrate held by the substrate holding unit as it faces outward in the radial direction. the downstream side of the direction. The substrate processing apparatus as described in Claim 1 or 2, further comprising: a controller for controlling the aforementioned substrate rotation unit, the aforementioned processing liquid supply unit, the aforementioned inert gas supply unit, and the aforementioned opposing member elevating unit; the aforementioned controller system The programming is to execute: the barrier space partitioning process is to move the opposing member and the aforementioned ring-shaped member to partition the barrier space by the aforementioned opposing member lifting unit; the atmosphere replacement process is to move from the aforementioned inert gas supply unit to the aforementioned substrate The upper surface is supplied with an inert gas, whereby the atmosphere in the barrier space is replaced by the inert gas; the process of supplying the treatment liquid is performed from the process liquid supply unit to the The upper surface of the substrate is supplied with the processing liquid; and the processing liquid discharge step is to rotate the substrate by the substrate rotating unit, thereby discharging the processing liquid on the upper surface of the substrate through the guide surface and the processing liquid discharge path. to the outside of the aforementioned barrier space. The substrate processing apparatus as described in claim 6, wherein the guide surface has: an inclined surface, which is inclined upward as it goes outward in the radial direction; the controller is programmed to perform: liquid storage In the forming process, the process liquid is supplied to the upper surface of the substrate held by the substrate holding unit in the process liquid supply process, whereby the process liquid is received by the inclined surface and the upper surface of the substrate to form the reservoirs of treatment fluids; and In the step of removing the accumulated liquid, in the step of discharging the processing liquid, the rotation of the substrate is accelerated by the substrate rotating unit and the accumulated liquid is removed from the upper surface of the substrate. A substrate processing apparatus comprising: a substrate holding unit that holds a substrate horizontally; a substrate rotating unit that rotates the substrate holding unit around a vertical axis that passes through the central portion of the substrate held by the substrate holding unit; a processing liquid The supply unit supplies the processing liquid toward the upper surface of the substrate held by the substrate holding unit; the inert gas supply unit supplies the inert gas toward the upper surface of the substrate held by the substrate holding unit; the opposing member includes : The circular plate portion has an opposing surface, and the aforementioned opposing surface is opposed to the aforementioned substrate held by the aforementioned substrate holding unit from above; and the extending portion is from the aforementioned circular plate portion toward the center of the aforementioned vertical axis. The outer direction of the radial direction extends; the ring-shaped member surrounds the aforementioned substrate held by the aforementioned substrate holding unit when viewed from above; and the opposing member lifting unit lifts the aforementioned opposing member and the aforementioned annular member together, thereby by The aforementioned substrate held by the aforementioned substrate holding unit, the aforementioned opposing member, and the aforementioned ring-shaped member define a barrier space, and the aforementioned barrier space restricts the inflow of atmosphere from the outside; the aforementioned ring-shaped member has a guide surface, and the aforementioned guide surface When the substrate rotating unit rotates the substrate held by the substrate holding unit, the treatment liquid present on the upper surface of the substrate is guided to the outside in the radial direction from the peripheral portion of the substrate by centrifugal force. ; The processing liquid discharge path is defined by the extending portion and the annular member, and the processing liquid discharge path discharges the processing liquid present on the guiding surface toward the outside of the isolation space; the substrate processing apparatus further includes: a control The device is used to control the aforementioned substrate rotation unit, the aforementioned processing liquid supply unit, the aforementioned inert gas supply unit, and the aforementioned opposing component lifting unit; the aforementioned controller is programmed to perform: the partitioning process of the barrier space, through the aforementioned opposing component lifting unit Moving the opposing member and the ring-shaped member to partition the barrier space; the atmosphere replacement step is to supply an inert gas from the inert gas supply unit to the upper surface of the substrate, thereby replacing the gas in the barrier space with the inert gas. atmosphere; the process of supplying the process liquid is to supply the process liquid from the process liquid supply unit to the upper surface of the substrate in the state where the atmosphere in the barrier space has been replaced by an inert gas; and the process of discharging the process liquid is to use The aforementioned substrate rotating unit rotates the aforementioned substrate, thereby discharging the aforementioned processing liquid on the upper surface of the aforementioned substrate to the outside of the aforementioned barrier space through the aforementioned guiding surface and the aforementioned processing liquid discharge path; the aforementioned guiding surface has: an inclined surface, As it is inclined upward toward the outer direction of the aforementioned radial direction; the aforementioned controller is programmed to perform: a liquid storage forming process, which is performed on the upper surface of the aforementioned substrate held by the aforementioned substrate holding unit in the aforementioned processing liquid supply process supplying the processing liquid, whereby the processing liquid is received by the inclined surface and the upper surface of the substrate to form a reservoir of the processing liquid; The rotation unit accelerates the rotation of the substrate and discharges the accumulated liquid from the upper surface of the substrate. A method for processing a substrate, comprising: a substrate holding step of horizontally holding a circular substrate when viewed from above; a space partitioning step of making an opposing member having a circular plate portion and an extended portion and a ring-shaped member face up and down Moving and partitioning the barrier space by the aforementioned opposing member, the aforementioned ring-shaped member, and the aforementioned substrate, the aforementioned circular plate portion has an opposing surface facing the aforementioned substrate from above, and the aforementioned extending portion is directed from the aforementioned circular plate portion toward The vertical axis of the central part of the substrate extends outward in the radial direction of the center, the annular member surrounds the substrate when viewed from above, and the barrier space restricts the inflow of atmosphere from the outside; the atmosphere replacement process is directed toward The barrier space is supplied with an inert gas, thereby replacing the atmosphere in the barrier space with the inert gas; the process of supplying the processing liquid is to treat the upper surface of the substrate in the state where the atmosphere in the barrier space has been replaced with the inert gas. supplying the processing liquid; and a process of discharging the processing liquid, in which the substrate is rotated around the rotation direction of the vertical axis in the state where the processing liquid is present on the upper surface of the substrate, whereby The treatment liquid is guided to the treatment liquid discharge path partitioned by the extension portion and the annular member through the guide surface provided on the annular member, and the treatment liquid is directed from the treatment liquid discharge path to the outside of the barrier space. Discharging; the aforementioned guide surface has: an inclined surface, which is inclined upward as it goes toward the outer direction of the aforementioned radial direction; the aforementioned processing liquid supply process includes: a liquid storage forming process, which is applied to the upper surface of the aforementioned substrate supplying the aforementioned processing liquid, whereby the aforementioned processing liquid is received by the aforementioned inclined surface and the upper surface of the aforementioned substrate to form a reservoir of the aforementioned processing liquid; The process of discharging the processing liquid includes a step of removing the accumulated liquid by accelerating the rotation of the substrate and removing the accumulated liquid from the upper surface of the substrate. The substrate processing method according to Claim 9, wherein the width of the treatment liquid discharge path is smaller than the width of the barrier space in the vertical direction. The substrate processing method as described in claim 9 or 10, wherein the annular member has a discharge path dividing surface connected to the outer direction end of the aforementioned guide surface in the radial direction, and defines the treatment liquid discharge path ; The aforementioned process liquid discharge path has an inlet at the junction between the aforementioned guide surface and the aforementioned discharge path partitioning surface. The substrate processing method described in claim 11, wherein the discharge path defining surface and the guiding surface are formed as a single flat surface that is flat in the horizontal direction. The substrate processing method as described in claim 9 or 10, further comprising: a synchronous rotation step of synchronously rotating the annular member and the opposing member around the vertical axis and the substrate in the processing liquid discharge step. The substrate processing method as described in Claim 13, wherein the aforementioned ring-shaped member and the aforementioned opposing member are connected by a connecting member; The direction is toward the downstream side of the rotation direction of the aforementioned substrate. The substrate processing method as described in claim 9 or 10, wherein the inner end surface of the ring-shaped member in the radial direction extends in the vertical direction; the upper end of the inner end surface is connected to the guide surface; The process of supplying the processing liquid includes a liquid reservoir forming process in which the ring-shaped member has been moved so that the upper end of the end surface in the inner direction of the ring-shaped member is located above the upper surface of the substrate. supplying the treatment liquid toward the upper surface of the substrate, whereby the treatment liquid is received by the inner end surface of the annular member and the upper surface of the substrate to form a reservoir of the treatment liquid; the process of discharging the treatment liquid is Including: a step of removing the accumulated liquid by moving the annular member so that the upper end portion of the end surface in the inner direction of the annular member is at the same height as the upper surface of the substrate, thereby removing the accumulated liquid from the upper surface of the substrate. The aforementioned reservoir. The substrate processing method as described in Claim 9 or 10, which further includes: a protective cover moving step, which is to make the first protective cover including the first cylindrical part and the first annular part and the second cylindrical part and the second circular ring part. The second protective cover of the two annular parts individually moves up and down, the aforementioned first cylindrical portion surrounds the aforementioned opposing member and the aforementioned annular member when viewed from above, and the aforementioned first annular portion is directed from the aforementioned first cylindrical portion toward The inner direction of the radial direction extends, the second cylindrical portion surrounds the opposing member and the annular member in plan view, and the second annular portion is directed from the second cylindrical portion toward the inner direction of the radial direction. Extending and facing the aforementioned first annular portion from below; the aforementioned processing liquid discharge path has: a discharge port for discharging the aforementioned processing liquid toward the outer direction of the aforementioned radial direction; the aforementioned protective cover moving process includes the following steps: When the treatment liquid is discharged from the discharge port, the treatment liquid discharge path is located at the inner side end of the first annular portion in the radial direction and the inner side of the second annular portion in the radial direction in the vertical direction. The way between the direction ends makes the aforementioned first protective cover and the aforementioned second protective cover move. The substrate processing method as described in claim 16, further comprising: a protective liquid supplying step, which is performed in parallel with the aforementioned treating liquid discharge step, for supplying protection to the lower surface of the aforementioned substrate to protect the lower surface of the aforementioned substrate. liquid; the above-mentioned protective cover moving process includes the following steps: making the above-mentioned The second shield moves. The substrate processing method as described in claim 9 or 10, further comprising: a pre-cleaning step of supplying a cleaning liquid to the upper surface of the substrate before the processing liquid supplying step; The cleaning solution on the upper surface plugs the gap between the annular member and the substrate and is discharged from the treatment solution discharge path; the pre-cleaning process is performed in parallel with the atmosphere replacement process. A method for processing a substrate, comprising: a substrate holding step of horizontally holding a circular substrate when viewed from above; a space partitioning step of making an opposing member having a circular plate portion and an extended portion and a ring-shaped member face up and down Moving and partitioning the barrier space by the aforementioned opposing member, the aforementioned ring-shaped member, and the aforementioned substrate, the aforementioned circular plate portion has an opposing surface facing the aforementioned substrate from above, and the aforementioned extending portion is directed from the aforementioned circular plate portion toward The vertical axis of the central part of the substrate extends outward in the radial direction of the center, the annular member surrounds the substrate when viewed from above, and the barrier space restricts the inflow of atmosphere from the outside; the atmosphere replacement process is directed toward The aforementioned isolated space is supplied with an inert gas, whereby the atmosphere in the aforementioned isolated space is replaced by the inert gas; In the process of supplying the process liquid, supplying the process liquid to the upper surface of the substrate in a state where the atmosphere in the barrier space has been replaced by an inert gas; and in the process of discharging the process liquid, the process liquid is present on the upper surface of the substrate In the state of rotating the aforementioned substrate around the rotation direction of the aforementioned vertical axis, the aforementioned processing liquid that exists on the peripheral portion of the upper surface of the aforementioned substrate is guided to be guided by the aforementioned extending The processing liquid discharge path partitioned by the installation part and the aforementioned ring-shaped member, and the aforementioned processing liquid is discharged from the aforementioned processing liquid discharge path toward the outside of the aforementioned barrier space; the inner side end surface of the aforementioned ring-shaped member in the aforementioned radial direction extends in the vertical direction The upper end portion of the aforementioned inner direction end surface is connected to the aforementioned guide surface; the aforementioned processing liquid supply process includes: a liquid storage forming process, wherein the aforementioned upper end portion of the aforementioned inner direction end surface of the aforementioned ring-shaped member is positioned higher than the aforementioned substrate. The processing liquid is supplied toward the upper surface of the substrate while the annular member is moved so that the surface is further upward, whereby the processing solution is received by the end surface of the annular member in the inner direction and the upper surface of the substrate. liquid and form the liquid storage of the aforementioned processing liquid; the aforementioned processing liquid discharge step includes: a liquid storage removal step, in which the aforementioned upper end portion of the aforementioned inner side end surface of the aforementioned annular member is located at the same height as the upper surface of the aforementioned substrate The annular member is moved to remove the liquid reservoir from the upper surface of the substrate.

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