TWI802178B - Probe card - Google Patents

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TWI802178B
TWI802178B TW110148853A TW110148853A TWI802178B TW I802178 B TWI802178 B TW I802178B TW 110148853 A TW110148853 A TW 110148853A TW 110148853 A TW110148853 A TW 110148853A TW I802178 B TWI802178 B TW I802178B
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Taiwan
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inorganic material
material layer
probe card
flexible inorganic
circuit board
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TW110148853A
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Chinese (zh)
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TW202326144A (en
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周敏傑
黃萌祺
高端環
黃悅真
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財團法人工業技術研究院
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Abstract

A probe card includes a flexible inorganic material layer, a metal micro structure, and a circuit board. The flexible inorganic material layer has a first surface and a second surface opposite to each other. The metal micro structure is disposed on the first surface. The circuit board is disposed on the second surface, and the circuit board is electrically connected to the metal micro structure. The test signal is adapted to conduct to the circuit board through the flexible inorganic material layer.

Description

探針卡probe card

本揭露是有關於一種檢測裝置,且特別是有關於一種探針卡。The present disclosure relates to a detection device, and in particular to a probe card.

積體電路進行測試時,測試機台透過探針卡(probe card)接觸積體電路,並傳送測試訊號以測試其功能是否符合預期。探針卡通常包含若干個尺寸精密的探針。積體電路測試時,藉由探針接觸待測物(device under test,DUT)上尺寸微小的接觸接點,傳遞來自於測試機台的測試訊號,並配合探針卡及測試機台的控制程序,達到量測積體電路的目的。When the integrated circuit is tested, the test machine contacts the integrated circuit through a probe card and sends a test signal to test whether its function meets expectations. A probe card usually contains several finely sized probes. When testing integrated circuits, the probes are used to contact the tiny contact points on the device under test (DUT) to transmit the test signal from the test machine, and cooperate with the control of the probe card and the test machine program to achieve the purpose of measuring integrated circuits.

由於探針卡上探針的針點皆根據待測物而設計,因此在目前先進半導體製程希望積體電路微小化的情況下,用於檢測微小化積體電路的探針卡的結構將隨之改變。然而,為了因應微小化積體電路的結構,上述用於檢測微小化積體電路的探針的針寬及間距將縮小,導致探針的強度不佳,容易受力而產生永久變形,嚴重影響探針卡的使用壽命及測試可靠度。Since the pinpoints of the probes on the probe card are designed according to the object to be tested, the structure of the probe card used to detect the miniaturized integrated circuit will vary with the current advanced semiconductor manufacturing process. change. However, in order to adapt to the structure of miniaturized integrated circuits, the needle width and spacing of the above-mentioned probes used to detect miniaturized integrated circuits will be reduced, resulting in poor strength of the probes, which are prone to permanent deformation due to force, which seriously affects The service life and test reliability of the probe card.

本揭露的探針卡包括可撓無機材料層、金屬微結構以及電路板。可撓無機材料層具有相對的第一表面及第二表面。金屬微結構設置於第一表面上。電路板設置於第二表面上,電路板電性連接於該金屬微結構。測試訊號適於透過金屬微結構而導通至電路板。其中,可撓無機材料層的材料的屈服強度大於500 MPa或可撓無機材料層的材料的楊氏係數大於50 GPa。The probe card of the present disclosure includes a flexible inorganic material layer, a metal microstructure and a circuit board. The flexible inorganic material layer has opposite first and second surfaces. The metal microstructure is disposed on the first surface. The circuit board is disposed on the second surface, and the circuit board is electrically connected to the metal microstructure. The test signal is adapted to be conducted through the metal microstructure to the circuit board. Wherein, the yield strength of the material of the flexible inorganic material layer is greater than 500 MPa or the Young's modulus of the material of the flexible inorganic material layer is greater than 50 GPa.

本揭露的探針卡包括可撓無機材料層、金屬微結構、電路板以及至少二導板。可撓無機材料層具有多個表面。金屬微結構設置於這些表面的至少一者,且具有連接端。電路板連接連接端。測試訊號適於透過金屬微結構而導通至電路板。各導板具有多個貫穿孔,且可撓無機材料層及金屬微結構穿過各導板的貫穿孔。可撓無機材料層的材料的屈服強度大於500 MPa或可撓無機材料層的材料的楊氏係數大於50 GPa。The probe card of the present disclosure includes a flexible inorganic material layer, a metal microstructure, a circuit board and at least two guide plates. The flexible inorganic material layer has multiple surfaces. The metal microstructure is disposed on at least one of the surfaces and has a connection end. Circuit board connection connector. The test signal is adapted to be conducted through the metal microstructure to the circuit board. Each guide plate has a plurality of through holes, and the flexible inorganic material layer and the metal microstructure pass through the through holes of each guide plate. The yield strength of the material of the flexible inorganic material layer is greater than 500 MPa or the Young's modulus of the material of the flexible inorganic material layer is greater than 50 GPa.

基於上述,在本揭露的探針卡的設計中,由於金屬微結構設置於可撓無機材料層,且測試訊號可透過金屬微結構而導通至電路板,使得金屬微結構在測試待側物時能夠受到可撓無機材料層的支撐,讓探針具有良好的強度及彈性且不易產生形變。據此,相較於既有技術以金屬製作的探針在面臨間距及針寬縮小時,易因受力變形產生永久變形而失效,本揭露的探針卡的探針可藉由可撓無機材料層的設置,使探針仍具有良好的強度及彈性,從而能夠增加探針卡的使用壽命並提升探針卡的測試可靠度。Based on the above, in the design of the probe card of the present disclosure, since the metal microstructure is arranged on the flexible inorganic material layer, and the test signal can be conducted to the circuit board through the metal microstructure, the metal microstructure can be used to test the object to be tested. Being supported by the flexible inorganic material layer, the probe has good strength and elasticity and is not easily deformed. Accordingly, compared with the probes made of metal in the prior art, which are prone to permanent deformation and failure due to force deformation when the pitch and pin width are reduced, the probes of the probe card disclosed in the present disclosure can be made of flexible inorganic The arrangement of the material layer enables the probe to still have good strength and elasticity, thereby increasing the service life of the probe card and improving the test reliability of the probe card.

為讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present disclosure more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

本揭露提供一種探針卡,其探針藉由可撓無機材料層而具備良好的強度。The present disclosure provides a probe card, the probes of which have good strength through the flexible inorganic material layer.

本揭露提供一種探針卡,其探針藉由可撓無機材料層而具備良好的強度。The present disclosure provides a probe card, the probes of which have good strength through the flexible inorganic material layer.

圖1為本揭露一實施例的探針卡的側視示意圖。圖2為圖1的探針卡的可撓無機材料層、金屬微結構以及接合層的立體示意圖。在此,須說明的是,圖中探針卡100的可撓無機材料層110、金屬微結構120、電路板130以及接合層140的尺寸、厚度等比例關係僅為示意,並不代表實際具體的結構大小及比例關係。並且,提供直角座標X-Y-Z以利於後續的構件描述。FIG. 1 is a schematic side view of a probe card according to an embodiment of the present disclosure. FIG. 2 is a schematic perspective view of the flexible inorganic material layer, the metal microstructure and the bonding layer of the probe card shown in FIG. 1 . Here, it should be noted that the proportions of the flexible inorganic material layer 110, the metal microstructure 120, the circuit board 130, and the bonding layer 140 of the probe card 100 in the figure are for illustration purposes only, and do not represent actual details. The size and proportion of the structure. Moreover, the rectangular coordinates X-Y-Z are provided to facilitate the subsequent component description.

請先參考圖1,探針卡100包括可撓無機材料層110、金屬微結構120及電路板130。本實施例的探針卡100的探針適於傳送測試訊號TS,此處,探針卡100的探針是由可撓無機材料層110及金屬微結構120所組成。在本實施例中,可撓無機材料層110的材料例如是玻璃、陶瓷或矽晶圓,但不以此為限。在本實施例中,金屬微結構120的材料為高導電性的材料。金屬微結構120的材料例如是銅、鎳、鎳鈷磷、鎳鈷、鎳錳或銠釕合金,但不以此為限。在本實施例中,電路板130包括印刷電路板或陶瓷電路板,但不以此為限制。Please refer to FIG. 1 first. The probe card 100 includes a flexible inorganic material layer 110 , a metal microstructure 120 and a circuit board 130 . The probes of the probe card 100 in this embodiment are suitable for transmitting the test signal TS. Here, the probes of the probe card 100 are composed of a flexible inorganic material layer 110 and a metal microstructure 120 . In this embodiment, the material of the flexible inorganic material layer 110 is, for example, glass, ceramic or silicon wafer, but not limited thereto. In this embodiment, the material of the metal microstructure 120 is a material with high conductivity. The material of the metal microstructure 120 is, for example, copper, nickel, nickel-cobalt-phosphorus, nickel-cobalt, nickel-manganese or rhodium-ruthenium alloy, but not limited thereto. In this embodiment, the circuit board 130 includes a printed circuit board or a ceramic circuit board, but not limited thereto.

詳細而言,請參考圖1,在本實施例中,可撓無機材料層110具有相對的第一表面111及第二表面112。金屬微結構120設置於第一表面111上,且電路板130設置於第二表面112上,電路板130電性連接於金屬微結構120。由於金屬微結構120的材料為高導電性的材料,因此測試訊號TS適於透過金屬微結構120而導通至電路板130。In detail, please refer to FIG. 1 , in this embodiment, the flexible inorganic material layer 110 has a first surface 111 and a second surface 112 opposite to each other. The metal microstructure 120 is disposed on the first surface 111 , and the circuit board 130 is disposed on the second surface 112 , and the circuit board 130 is electrically connected to the metal microstructure 120 . Since the material of the metal microstructure 120 is a material with high conductivity, the test signal TS is suitable to be conducted to the circuit board 130 through the metal microstructure 120 .

舉例而言,在本實施例中,金屬微結構120適於接觸待測物(未繪示),以對待測物(未繪示)進行測試,而待測物(未繪示)例如是積體電路或半導體晶圓上的晶粒,但不以此為限。電路板130例如是電性連接於產生測試訊號TS的測試機(未繪示),但不以此為限。也就是說,在本實施例中,探針卡100例如是由測試機(未繪示)提供測試訊號TS,經由探針卡100對一待測物(未繪示)進行測試,但不以此為限。For example, in this embodiment, the metal microstructure 120 is suitable for contacting the object under test (not shown), so as to test the object under test (not shown), and the object under test (not shown) is, for example, a product Dies on bulk circuits or semiconductor wafers, but not limited thereto. The circuit board 130 is, for example, electrically connected to a testing machine (not shown) that generates the test signal TS, but not limited thereto. That is to say, in this embodiment, the probe card 100 is provided with the test signal TS by, for example, a testing machine (not shown), and a test object (not shown) is tested through the probe card 100, but not by This is the limit.

值得一提的是,在本實施例中,由於金屬微結構120配置於可撓無機材料層110上,使得金屬微結構120能夠受到可撓無機材料層110的支撐,讓探針卡100的探針具有良好的強度及彈性且不易產生形變。據此,相較於既有技術中僅以金屬製作的探針在面臨間距及針寬縮小時,易因受力變形產生永久變形而失效,本實施例的探針卡100的探針可藉由可撓無機材料層110的設置,使探針卡100的探針仍具有良好的強度及彈性。It is worth mentioning that, in this embodiment, since the metal microstructure 120 is disposed on the flexible inorganic material layer 110, the metal microstructure 120 can be supported by the flexible inorganic material layer 110, so that the probe of the probe card 100 The needle has good strength and elasticity and is not easily deformed. Accordingly, compared with the probes in the prior art that are only made of metal, which are prone to permanent deformation and failure due to force deformation when the pitch and needle width are reduced, the probes of the probe card 100 in this embodiment can be used Due to the arrangement of the flexible inorganic material layer 110 , the probes of the probe card 100 still have good strength and elasticity.

一般用於製作探針的懸臂的金屬材料的屈服強度(yield strength)較低(約為70 MPa~300 MPa),因此在製作成微小懸臂式探針後,懸臂易因探針受力彎曲而導致永久變形。在本實施例中,可撓無機材料層110的材料具備足夠的屈服強度以支撐金屬微結構120。在一實施例中,可撓無機材料層110的材料的屈服強度(yield strength)例如是大於500 MPa,且可撓無機材料層110的材料的楊氏係數例如是大於50 GPa,但不以此為限。在一實施例中,可撓無機材料層110的材料的屈服強度例如是500 MPa至1200 MPa,可撓無機材料層110的材料的楊氏係數例如是50 GPa至400 GPa。並且,在結構設計上,可撓無機材料層110的厚度T1例如是介於30微米至300微米之間。在一實施例中,可撓無機材料層110的長度L1與厚度T1的比值(即L1/T1)例如是介於9至30之間,但不以此為限。Generally, the metal material used to make the cantilever of the probe has a low yield strength (about 70 MPa~300 MPa), so after being made into a tiny cantilever probe, the cantilever is easy to bend due to the force of the probe. cause permanent deformation. In this embodiment, the material of the flexible inorganic material layer 110 has sufficient yield strength to support the metal microstructure 120 . In one embodiment, the yield strength of the material of the flexible inorganic material layer 110 is greater than 500 MPa, and the Young's modulus of the material of the flexible inorganic material layer 110 is greater than 50 GPa, but not necessarily limit. In an embodiment, the yield strength of the material of the flexible inorganic material layer 110 is, for example, 500 MPa to 1200 MPa, and the Young's modulus of the material of the flexible inorganic material layer 110 is, for example, 50 GPa to 400 GPa. Moreover, in terms of structural design, the thickness T1 of the flexible inorganic material layer 110 is, for example, between 30 micrometers and 300 micrometers. In one embodiment, the ratio of the length L1 to the thickness T1 of the flexible inorganic material layer 110 (ie, L1/T1 ) is, for example, between 9 and 30, but not limited thereto.

以下進一步說明本實施例的探針卡100。The probe card 100 of this embodiment will be further described below.

請參考圖2,在本實施例中,可撓無機材料層110包括本體部113及多個指叉部114,金屬微結構120包括與多個指叉部114相對應且連接的多個金屬子結構121。多個指叉部114連接於本體部113的一側,且每一個金屬子結構121適於與相對應的指叉部114沿平行X軸的方向往本體部113延伸。Please refer to FIG. 2. In this embodiment, the flexible inorganic material layer 110 includes a body portion 113 and a plurality of interdigitated portions 114, and the metal microstructure 120 includes a plurality of metal substructures corresponding to and connected to the plurality of interdigitated portions 114. Structure 121. A plurality of forked portions 114 are connected to one side of the main body portion 113 , and each metal substructure 121 is adapted to extend toward the main body portion 113 along a direction parallel to the X-axis with the corresponding forked portion 114 .

詳細而言,請參考圖1及圖2,在本實施例中,可撓無機材料層110的本體部113具有貫穿於第一表面111及第二表面112之間並連接至每一個金屬子結構121及電路板130的導通孔115,且每一個金屬子結構121設置於第一表面111及導通孔115上,亦即,每一個金屬子結構121在沿著相對應的指叉部114往本體部113延伸(沿平行X軸的方向)後,適於沿導通孔115往電路板130延伸(沿平行Y軸的方向)。據此,電路板130可透過導通孔115而電性連接於金屬子結構121。In detail, please refer to FIG. 1 and FIG. 2. In this embodiment, the body portion 113 of the flexible inorganic material layer 110 has a structure that penetrates between the first surface 111 and the second surface 112 and is connected to each metal substructure. 121 and the via hole 115 of the circuit board 130, and each metal substructure 121 is disposed on the first surface 111 and the via hole 115, that is, each metal substructure 121 moves toward the main body along the corresponding fork portion 114 After the portion 113 extends (along the direction parallel to the X-axis), it is adapted to extend along the via hole 115 to the circuit board 130 (along the direction parallel to the Y-axis). Accordingly, the circuit board 130 can be electrically connected to the metal sub-structure 121 through the via hole 115 .

更詳細而言,請參考圖1及圖2,在本實施例中,金屬微結構120包括多個凸出部122,每一個凸出部122設置相對應於金屬子結構121,且位在相對於第一表面111的第三表面123。詳細來說,凸出部122設置於金屬子結構121對應於可撓無機材料層110之指叉部114的一端,且凸出於第三表面123。藉此,測試訊號TS適於透過金屬子結構121並沿著導通孔115而導通至電路板130,且每一個凸出部122可適於接觸待測物的接觸接點(未繪示)。在一實施例中,每一個凸出部122的材料包括鎳磷、鎳鈷、鎳錳或銠釕合金,但不以此為限。In more detail, please refer to FIG. 1 and FIG. 2. In this embodiment, the metal microstructure 120 includes a plurality of protrusions 122, and each protrusion 122 is disposed corresponding to the metal substructure 121 and is located opposite on the third surface 123 of the first surface 111 . In detail, the protruding portion 122 is disposed at one end of the metal substructure 121 corresponding to the interdigitated portion 114 of the flexible inorganic material layer 110 , and protrudes from the third surface 123 . Thereby, the test signal TS is suitable to be conducted to the circuit board 130 through the metal substructure 121 and along the via hole 115 , and each protrusion 122 is suitable for contacting a contact point (not shown) of the object under test. In one embodiment, the material of each protrusion 122 includes nickel phosphorus, nickel cobalt, nickel manganese or rhodium ruthenium alloy, but not limited thereto.

在此,須說明的是,在本實施例中的探針卡之製作方式例如是先以雷射改質蝕刻製程的方式將無機材料層製作為可撓無機材料層110,再以黃光製程與電鍍製程的方式將金屬微結構(包括凸出部)製作二階金屬結構於無機材料層上,以形成具有導線之探針卡,但本揭露不以此限制上述探針卡100的製作方式以及順序。Here, it should be noted that the method of manufacturing the probe card in this embodiment is, for example, to first make the inorganic material layer into a flexible inorganic material layer 110 by means of a laser modified etching process, and then use a photolithography process to make the inorganic material layer 110 In the same way as the electroplating process, the metal microstructure (including the protruding part) is made into a second-level metal structure on the inorganic material layer to form a probe card with wires, but this disclosure does not limit the above-mentioned method of making the probe card 100 and order.

此外,請參考圖1,在本實施例中,探針卡100更包括位於可撓無機材料層110與電路板130之間的接合層140。接合層140的材料例如是ABF(Ajinomoto Build-up Film)、錫、錫合金及銀膠,但不以此為限。如此,可撓無機材料層110可透過接合層140與電路板130接合。在一實施例中,電路板130更包括接墊133。金屬微結構120可透過接合層140電性連接於電路板130的接墊133。In addition, please refer to FIG. 1 , in this embodiment, the probe card 100 further includes a bonding layer 140 between the flexible inorganic material layer 110 and the circuit board 130 . The material of the bonding layer 140 is, for example, ABF (Ajinomoto Build-up Film), tin, tin alloy and silver glue, but not limited thereto. In this way, the flexible inorganic material layer 110 can be bonded to the circuit board 130 through the bonding layer 140 . In one embodiment, the circuit board 130 further includes pads 133 . The metal microstructure 120 can be electrically connected to the pad 133 of the circuit board 130 through the bonding layer 140 .

在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參照前述實施例,下述實施例不再重複贅述。It must be noted here that the following embodiments use the component numbers and part of the content of the previous embodiments, wherein the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

圖3為本揭露另一實施例的探針卡的側視示意圖。請同時參考圖1與圖3,本實施例的探針卡100A與圖1的探針卡100相似,但要注意的是,圖3電路板130A的結構具有傾斜的表面。FIG. 3 is a schematic side view of a probe card according to another embodiment of the present disclosure. Please refer to FIG. 1 and FIG. 3 at the same time. The probe card 100A of this embodiment is similar to the probe card 100 in FIG. 1 , but it should be noted that the structure of the circuit board 130A in FIG. 3 has an inclined surface.

請參考圖3,在本實施例中,電路板130A具有相對的水平面131A及傾斜面132A。可撓無機材料層110的第二表面112藉由接合層140連接電路板130A的傾斜面132A。此處,傾斜面132A相對於水平面131A的傾斜度數例如是1.5度至6度,但不以此為限。Please refer to FIG. 3 , in this embodiment, the circuit board 130A has opposite horizontal surfaces 131A and inclined surfaces 132A. The second surface 112 of the flexible inorganic material layer 110 is connected to the inclined surface 132A of the circuit board 130A through the bonding layer 140 . Here, the degree of inclination of the inclined surface 132A relative to the horizontal surface 131A is, for example, 1.5 degrees to 6 degrees, but not limited thereto.

詳細而言,在本實施例中,可撓無機材料層110中相連於第二表面112具有相對的第一端E1及第二端E2,且金屬微結構120的凸出部122可設置對應於可撓無機材料層110的第一端E1。在此,須說明的是,在本實施例中,第一端E1至水平面131A的垂直距離D1與第二端E2至水平面131A的垂直距離D2的差值介於50微米至500微米之間,但不以此為限。In detail, in this embodiment, the flexible inorganic material layer 110 connected to the second surface 112 has opposite first ends E1 and second ends E2, and the protrusions 122 of the metal microstructures 120 can be arranged corresponding to The first end E1 of the flexible inorganic material layer 110 . Here, it should be noted that, in this embodiment, the difference between the vertical distance D1 from the first end E1 to the horizontal plane 131A and the vertical distance D2 from the second end E2 to the horizontal plane 131A is between 50 μm and 500 μm, But not limited to this.

也就是說,在金屬微結構120的厚度T2遠小於可撓無機材料層110的厚度T1之情形下,上述電路板130A的傾斜式結構,可使可撓無機材料層110呈現傾斜狀(即第一端E1相較於第二端E2較接近待測物),讓可撓無機材料層110在金屬微結構120的凸出部122接觸待測物(未繪示)時,不與待測物(未繪示)產生結構干涉。That is to say, when the thickness T2 of the metal microstructure 120 is much smaller than the thickness T1 of the flexible inorganic material layer 110, the inclined structure of the above-mentioned circuit board 130A can make the flexible inorganic material layer 110 appear inclined (that is, the first One end E1 is closer to the object under test than the second end E2), so that the flexible inorganic material layer 110 does not contact the object under test (not shown) when the protruding portion 122 of the metal microstructure 120 touches the object under test (not shown). (not shown) resulting in structural interference.

圖4為本揭露另一實施例的探針卡的側視示意圖。請同時參考圖1與圖4,本實施例的探針卡100B與圖1的探針卡100相似,但要注意的是,圖4探針卡100B更包括第一導線層150,且可撓無機材料層110B不具有導通孔115,金屬微結構120B完全的覆蓋可撓無機材料層110B之第一表面111。FIG. 4 is a schematic side view of a probe card according to another embodiment of the present disclosure. Please refer to FIG. 1 and FIG. 4 at the same time. The probe card 100B of this embodiment is similar to the probe card 100 in FIG. 1, but it should be noted that the probe card 100B in FIG. The inorganic material layer 110B does not have the via hole 115 , and the metal microstructure 120B completely covers the first surface 111 of the flexible inorganic material layer 110B.

請參考圖4,在本實施例中,可撓無機材料層110B具有連接於第一表面111及第二表面112之間的第一側壁116及第二側壁117,且相連於第二表面112具有相對的第一端E1及第二端E2。第一側壁116位於第二端E2且靠近電路板130,第二側壁117位於第一端E1且遠離電路板130。金屬微結構120B的凸出部122可設置對應於可撓無機材料層110B的第一端E1。Please refer to FIG. 4. In this embodiment, the flexible inorganic material layer 110B has a first side wall 116 and a second side wall 117 connected between the first surface 111 and the second surface 112, and is connected to the second surface 112 with a The opposite first end E1 and the second end E2. The first side wall 116 is located at the second end E2 and close to the circuit board 130 , and the second side wall 117 is located at the first end E1 and away from the circuit board 130 . The protruding portion 122 of the metal microstructure 120B may be disposed corresponding to the first end E1 of the flexible inorganic material layer 110B.

在本實施例中,探針卡100B更包括第一導線層150。第一導線層150設置於可撓無機材料層110B的第二表面112及可撓無機材料層110B的靠近電路板130的第一側壁116上,且第一導線層150連接金屬微結構120B及電路板130。具體而言,金屬微結構120B在沿著可撓無機材料層110B的第一表面111自第一端E1往第二端E2延伸(平行X軸的方向)後,適於連接第一導線層150。第一導線層150適於沿第一側壁116往電路板130延伸(平行Y軸的方向),最後再沿著可撓無機材料層110B的第二表面112延伸(平行-X軸的方向)。據此,電路板130可透過第一導線層150電性連接於金屬微結構120B。In this embodiment, the probe card 100B further includes a first wire layer 150 . The first wire layer 150 is disposed on the second surface 112 of the flexible inorganic material layer 110B and the first side wall 116 of the flexible inorganic material layer 110B close to the circuit board 130, and the first wire layer 150 connects the metal microstructure 120B and the circuit plate 130. Specifically, after the metal microstructure 120B extends from the first end E1 to the second end E2 (in a direction parallel to the X-axis) along the first surface 111 of the flexible inorganic material layer 110B, it is suitable for connecting the first wire layer 150 . The first wire layer 150 is adapted to extend toward the circuit board 130 along the first sidewall 116 (direction parallel to the Y axis), and finally extend along the second surface 112 of the flexible inorganic material layer 110B (direction parallel to the -X axis). Accordingly, the circuit board 130 can be electrically connected to the metal microstructure 120B through the first wire layer 150 .

藉此,測試訊號TS適於從金屬微結構120B經由第一導線層150而導通至電路板130,進以對待測物(未繪示)進行檢測。Accordingly, the test signal TS is suitable to be conducted from the metal microstructure 120B to the circuit board 130 through the first wire layer 150 , so as to detect the object under test (not shown).

圖5為本揭露另一實施例的探針卡的側視示意圖。請同時參考圖4與圖5,本實施例的探針卡100C與圖4的探針卡100B相似,但要注意的是,圖5探針卡100C以第二導線層160取代第一導線層150。FIG. 5 is a schematic side view of a probe card according to another embodiment of the present disclosure. Please refer to FIG. 4 and FIG. 5 at the same time. The probe card 100C of this embodiment is similar to the probe card 100B in FIG. 4 , but it should be noted that the probe card 100C in FIG. 150.

請參考圖5,在本實施例中,可撓無機材料層110B具有連接於第一表面111及第二表面112之間的第一側壁116及第二側壁117,且相連於第二表面112具有相對的第一端E1及第二端E2。第一側壁116位於第二端E2且靠近電路板130,第二側壁117位於第一端E1且遠離電路板130。金屬微結構120C的凸出部122可設置對應於可撓無機材料層110B的第一端E1。Please refer to FIG. 5. In this embodiment, the flexible inorganic material layer 110B has a first side wall 116 and a second side wall 117 connected between the first surface 111 and the second surface 112, and is connected to the second surface 112 with a The opposite first end E1 and the second end E2. The first side wall 116 is located at the second end E2 and close to the circuit board 130 , and the second side wall 117 is located at the first end E1 and away from the circuit board 130 . The protruding portion 122 of the metal microstructure 120C may be disposed corresponding to the first end E1 of the flexible inorganic material layer 110B.

在本實施例中,探針卡100B更包括第二導線層160。第二導線層160設置於可撓無機材料層110B的第二表面112及可撓無機材料層110B遠離電路板130的第二側壁117上,且第二導線層160連接金屬微結構120C及電路板130。具體而言,金屬微結構120C在沿著可撓無機材料層110B的第一表面111自第一端E1往第二側壁117延伸(平行-X軸的方向)後,適於連接第二導線層160。第二導線層160適於沿第二側壁117延伸(平行Y軸的方向),最後再沿著可撓無機材料層110B的第二表面112往電路板130延伸(平行X軸的方向)。據此,電路板130可透過第二導線層160電性連接於金屬微結構120C。In this embodiment, the probe card 100B further includes a second wire layer 160 . The second wire layer 160 is disposed on the second surface 112 of the flexible inorganic material layer 110B and the second side wall 117 of the flexible inorganic material layer 110B away from the circuit board 130, and the second wire layer 160 connects the metal microstructure 120C and the circuit board 130. Specifically, after the metal microstructure 120C extends from the first end E1 to the second side wall 117 along the first surface 111 of the flexible inorganic material layer 110B (parallel to the direction of the -X axis), it is suitable for connecting the second wire layer 160. The second wire layer 160 is adapted to extend along the second sidewall 117 (direction parallel to the Y-axis), and finally extend toward the circuit board 130 along the second surface 112 of the flexible inorganic material layer 110B (direction parallel to the X-axis). Accordingly, the circuit board 130 can be electrically connected to the metal microstructure 120C through the second wire layer 160 .

藉此,測試訊號TS適於從金屬微結構120C經由第二導線層160而導通至電路板130,進以對待測物(未繪示)進行檢測。Accordingly, the test signal TS is suitable to be conducted from the metal microstructure 120C to the circuit board 130 through the second wire layer 160 , so as to detect the object under test (not shown).

圖6為本揭露另一實施例的探針卡的側視示意圖。請同時參考圖1與圖6,本實施例的探針卡100D與圖1的探針卡100相似,兩者的差異在於:金屬微結構120D的結構,且更包括第二導線層160。FIG. 6 is a schematic side view of a probe card according to another embodiment of the present disclosure. Please refer to FIG. 1 and FIG. 6 at the same time. The probe card 100D of this embodiment is similar to the probe card 100 of FIG.

請參考圖6,在本實施例中,可撓無機材料層110具有貫穿於第一表面111及第二表面112之間的導通孔115,且具有連接於第一表面111及第二表面112之間的第一側壁116及第二側壁117。Please refer to FIG. 6. In this embodiment, the flexible inorganic material layer 110 has a via hole 115 penetrating between the first surface 111 and the second surface 112, and has a connection between the first surface 111 and the second surface 112. Between the first side wall 116 and the second side wall 117 .

在本實施例中,金屬微結構120D包括第一微結構121D及第二微結構122D。第一微結構121D及第二微結構122D設置於可撓無機材料層110的第一表面111上。第二導線層160設置可撓無機材料層110的第二表面112及可撓無機材料層110的遠離電路板130的第二側壁117上,且第二導線層160連接第一微結構121D及電路板130。導通孔115連接至第二微結構122D及電路板130。第一微結構121D及第二微結構122D在第一表面111的一側分別具有凸出部123D。In this embodiment, the metal microstructure 120D includes a first microstructure 121D and a second microstructure 122D. The first microstructure 121D and the second microstructure 122D are disposed on the first surface 111 of the flexible inorganic material layer 110 . The second wire layer 160 is disposed on the second surface 112 of the flexible inorganic material layer 110 and the second side wall 117 of the flexible inorganic material layer 110 away from the circuit board 130, and the second wire layer 160 is connected to the first microstructure 121D and the circuit plate 130. The via hole 115 is connected to the second microstructure 122D and the circuit board 130 . The first microstructure 121D and the second microstructure 122D respectively have protrusions 123D on one side of the first surface 111 .

具體而言,在本實施例中,第一微結構121D沿著可撓無機材料層110的第一表面111往第二側壁117延伸(平行-X軸的方向)後,適於連接第二導線層160。第二導線層160適於沿第二側壁117延伸(平行Y軸的方向),最後再沿著可撓無機材料層110B的第二表面112往電路板130延伸(平行X軸的方向)。第二微結構122D在沿著可撓無機材料層110的第一表面111往導通孔115延伸(平行X軸的方向)後,適於沿著導通孔115往電路板130延伸(平行Y軸的方向)。據此,電路板130可透過第二導線層160、導通孔115而分別電性連接於金屬微結構120D的第一微結構121D及第二微結構122D。Specifically, in this embodiment, after the first microstructure 121D extends along the first surface 111 of the flexible inorganic material layer 110 to the second side wall 117 (parallel to the direction of the -X axis), it is suitable for connecting the second wire Layer 160. The second wire layer 160 is adapted to extend along the second sidewall 117 (direction parallel to the Y-axis), and finally extend toward the circuit board 130 along the second surface 112 of the flexible inorganic material layer 110B (direction parallel to the X-axis). After the second microstructure 122D extends along the first surface 111 of the flexible inorganic material layer 110 to the via hole 115 (parallel to the direction of the X-axis), it is suitable to extend along the via hole 115 to the circuit board 130 (parallel to the direction of the Y-axis). direction). Accordingly, the circuit board 130 can be electrically connected to the first microstructure 121D and the second microstructure 122D of the metal microstructure 120D respectively through the second wire layer 160 and the via hole 115 .

藉此,測試訊號TS適於從金屬微結構120D分別經由導通孔115及第二導線層160而導通至電路板130,並透過第一微結構121D及第二微結構122D的凸出部123D同時接觸待測物(未繪示),進而可檢測具有較密接觸接點的待測物(未繪示)。In this way, the test signal TS is suitable to be conducted from the metal microstructure 120D to the circuit board 130 through the via hole 115 and the second wire layer 160 respectively, and pass through the protrusion 123D of the first microstructure 121D and the second microstructure 122D at the same time. The object under test (not shown) is contacted, so that the object under test (not shown) with relatively close contact points can be detected.

圖7為本揭露另一實施例的探針卡的側視示意圖。請同時參考圖6與圖7,本實施例的探針卡100E與圖6的探針卡100D相似,但要注意的是,圖7探針卡100E更包括第一導線層150,且可撓無機材料層110B不具有導通孔115。FIG. 7 is a schematic side view of a probe card according to another embodiment of the present disclosure. Please refer to FIG. 6 and FIG. 7 at the same time. The probe card 100E of this embodiment is similar to the probe card 100D in FIG. 6, but it should be noted that the probe card 100E in FIG. The inorganic material layer 110B does not have the via hole 115 .

請參考圖7,在本實施例中,可撓無機材料層110B具有相對的第一表面111及第二表面112,且具有連接於第一表面111及第二表面112之間的第一側壁116及第二側壁117。Please refer to FIG. 7 , in this embodiment, the flexible inorganic material layer 110B has a first surface 111 and a second surface 112 opposite to each other, and has a first side wall 116 connected between the first surface 111 and the second surface 112 and the second side wall 117 .

在本實施例中,探針卡100E更包括第一導線層150,且金屬微結構120E包括第一微結構121E及第二微結構122E。第一微結構121E及第二微結構122E設置於可撓無機材料層110B的第一表面111上。第一導線層150設置於可撓無機材料層110B的第二表面112及可撓無機材料層110B的靠近電路板130的第一側壁116上,且第一導線層150連接第二微結構122E及電路板130。第二導線層160設置可撓無機材料層110B的第二表面112及可撓無機材料層110的遠離電路板130的第二側壁117上,且第二導線層160連接第一微結構121E及電路板130。第一微結構121E及第二微結構122E在第一表面111的一側分別具有凸出部123D。In this embodiment, the probe card 100E further includes a first wire layer 150 , and the metal microstructure 120E includes a first microstructure 121E and a second microstructure 122E. The first microstructure 121E and the second microstructure 122E are disposed on the first surface 111 of the flexible inorganic material layer 110B. The first wire layer 150 is disposed on the second surface 112 of the flexible inorganic material layer 110B and the first side wall 116 of the flexible inorganic material layer 110B close to the circuit board 130, and the first wire layer 150 is connected to the second microstructure 122E and circuit board 130 . The second wire layer 160 is disposed on the second surface 112 of the flexible inorganic material layer 110B and the second side wall 117 of the flexible inorganic material layer 110 away from the circuit board 130, and the second wire layer 160 is connected to the first microstructure 121E and the circuit plate 130. The first microstructure 121E and the second microstructure 122E respectively have protrusions 123D on one side of the first surface 111 .

具體而言,在本實施例中,第一微結構121E在沿著可撓無機材料層110B的第一表面111往第二側壁117延伸(平行-X軸的方向)後,適於連接第二導線層160。第二導線層160適於沿第二側壁117延伸(平行Y軸的方向),最後再沿著可撓無機材料層110B的第二表面112往電路板130延伸(平行X軸的方向)。第二微結構122E在沿著可撓無機材料層110B的第一表面111往第一側壁116延伸(平行X軸的方向)後,適於連接第一導線層150。第一導線層150適於沿第一側壁116往電路板130延伸(平行Y軸的方向),最後再沿著可撓無機材料層110B的第二表面112延伸(平行-X軸的方向)。據此,電路板130可透過第二導線層160、第一導線層150而分別電性連接於金屬微結構120E的第一微結構121E及第二微結構122E。Specifically, in this embodiment, the first microstructure 121E is suitable for connecting the second Wire layer 160. The second wire layer 160 is adapted to extend along the second sidewall 117 (direction parallel to the Y-axis), and finally extend toward the circuit board 130 along the second surface 112 of the flexible inorganic material layer 110B (direction parallel to the X-axis). After the second microstructure 122E extends along the first surface 111 of the flexible inorganic material layer 110B toward the first sidewall 116 (in a direction parallel to the X-axis), it is suitable for connecting to the first wire layer 150 . The first wire layer 150 is adapted to extend toward the circuit board 130 along the first sidewall 116 (direction parallel to the Y axis), and finally extend along the second surface 112 of the flexible inorganic material layer 110B (direction parallel to the -X axis). Accordingly, the circuit board 130 can be electrically connected to the first microstructure 121E and the second microstructure 122E of the metal microstructure 120E respectively through the second wiring layer 160 and the first wiring layer 150 .

藉此,測試訊號TS適於從金屬微結構120E經由第一導線層150及第二導線層160而導通至電路板130,並透過第一微結構121E及第二微結構122E的凸出部123D同時接觸待測物(未繪示),進而可檢測具有較密接觸接點的待測物(未繪示)。Thus, the test signal TS is suitable to conduct from the metal microstructure 120E to the circuit board 130 through the first wiring layer 150 and the second wiring layer 160, and pass through the protrusion 123D of the first microstructure 121E and the second microstructure 122E. At the same time, the object under test (not shown) is contacted, so that the object under test (not shown) with relatively close contact points can be detected.

圖8A為本揭露另一實施例的探針卡的側視剖面示意圖。圖8B為圖8A的探針卡的局部放大示意圖。請同時參考圖1與圖8A,本實施例的探針卡100F與圖1的探針卡100相似,但要注意的是,圖8A之探針卡100F為垂直式探針卡,而圖1之探針卡100為懸臂式探針卡。FIG. 8A is a schematic side sectional view of a probe card according to another embodiment of the present disclosure. FIG. 8B is a partially enlarged schematic view of the probe card in FIG. 8A . Please refer to FIG. 1 and FIG. 8A at the same time. The probe card 100F of this embodiment is similar to the probe card 100 of FIG. 1, but it should be noted that the probe card 100F of FIG. The probe card 100 is a cantilever probe card.

請參考圖8A及圖8B,在本實施例中,探針卡100F包括可撓無機材料層110F、金屬微結構120F及電路板130F。此處,探針卡100F的探針是由可撓無機材料層110F及金屬微結構120F所組成,適於傳送測試訊號TS。Please refer to FIG. 8A and FIG. 8B , in this embodiment, the probe card 100F includes a flexible inorganic material layer 110F, a metal microstructure 120F and a circuit board 130F. Here, the probes of the probe card 100F are composed of a flexible inorganic material layer 110F and a metal microstructure 120F, which are suitable for transmitting the test signal TS.

詳細而言,請參考圖8B,在本實施例中,可撓無機材料層110F具有多個表面,且這些表面包括相對的上表面111F與下表面112F以及相連於上表面111F、下表面112F的第一側表面113F與第二側表面114F。金屬微結構120F設置且包覆於上表面111F、下表面112F及第二側表面114F,且具有連接端121F。電路板130F沿平行Z軸方向連接至連接端121F,且測試訊號TS適於透過金屬微結構120F導通至電路板130F。In detail, please refer to FIG. 8B. In this embodiment, the flexible inorganic material layer 110F has multiple surfaces, and these surfaces include an upper surface 111F and a lower surface 112F opposite to each other, as well as a layer connected to the upper surface 111F and the lower surface 112F. The first side surface 113F and the second side surface 114F. The metal microstructure 120F is disposed and covered on the upper surface 111F, the lower surface 112F and the second side surface 114F, and has a connection end 121F. The circuit board 130F is connected to the connection terminal 121F along the direction parallel to the Z axis, and the test signal TS is suitable for conducting to the circuit board 130F through the metal microstructure 120F.

更詳細而言,請參考圖8A及圖8B,在本實施例中,探針卡100F更包括二個導板170,且金屬微結構120F包括凸出部122F。每一個導板170具有對應於探針(即可撓無機材料層110F及金屬微結構120F)的多個貫穿孔171,且探針(即可撓無機材料層110F及金屬微結構120F)穿過每一個導板170的這些貫穿孔171。金屬微結構120F的凸出部122F位在相對於連接端121F的一端,以接觸待測物50。In more detail, please refer to FIG. 8A and FIG. 8B . In this embodiment, the probe card 100F further includes two guide plates 170 , and the metal microstructure 120F includes a protrusion 122F. Each guide plate 170 has a plurality of through holes 171 corresponding to the probes (ie, the flexible inorganic material layer 110F and the metal microstructure 120F), and the probes (ie, the flexible inorganic material layer 110F and the metal microstructure 120F) pass through The through holes 171 of each guide plate 170 . The protruding portion 122F of the metal microstructure 120F is located at an end opposite to the connecting end 121F, so as to contact the object under test 50 .

此處,需說明的是,在本實施例中,二個導板170為錯位設置(圖未示出),由於二個導板170的這些貫穿孔171可供可撓無機材料層110F及金屬微結構120F穿過,配合多個導板170的錯位設置,而能夠有效固定探針並可調整探針的接觸方向。Here, it should be noted that in this embodiment, the two guide plates 170 are set in a misaligned position (not shown in the figure), because the through holes 171 of the two guide plates 170 can be used for the flexible inorganic material layer 110F and the metal The microstructure 120F passes through, and cooperates with the offset arrangement of the plurality of guide plates 170 to effectively fix the probe and adjust the contact direction of the probe.

並且,在本實施例中,可撓無機材料層110F的材料包括玻璃、陶瓷或矽晶圓,但不以此為限。在本實施例中,金屬微結構120F的材料包括銅、鎳、鎳鈷磷、鎳鈷、鎳錳或銠釕合金,但不以此為限。在本實施例中,電路板130F包括印刷電路板或陶瓷電路板,但不以此為限。在本實施例中,每一個導板170的材料不具有導電性,包括塑膠或陶瓷,但不以此為限。在本實施例中,金屬微結構120F的凸出部122F的材料包括鎳鈷磷、鎳鈷、鎳錳或銠釕合金,但不以此為限。在其他實施例中,金屬微結構120F可不包括凸出部122F,當金屬微結構120F不具有凸出部122F時,金屬微結構120F的材料包括鎳鈷、鎳錳或銠釕合金,但不以此為限。Moreover, in this embodiment, the material of the flexible inorganic material layer 110F includes glass, ceramic or silicon wafer, but not limited thereto. In this embodiment, the material of the metal microstructure 120F includes copper, nickel, nickel-cobalt-phosphorus, nickel-cobalt, nickel-manganese or rhodium-ruthenium alloy, but not limited thereto. In this embodiment, the circuit board 130F includes a printed circuit board or a ceramic circuit board, but not limited thereto. In this embodiment, the material of each guide plate 170 is non-conductive, including plastic or ceramics, but not limited thereto. In this embodiment, the material of the protruding portion 122F of the metal microstructure 120F includes nickel-cobalt-phosphorus, nickel-cobalt, nickel-manganese or rhodium-ruthenium alloy, but not limited thereto. In other embodiments, the metal microstructure 120F may not include the protrusion 122F. When the metal microstructure 120F does not have the protrusion 122F, the material of the metal microstructure 120F includes nickel-cobalt, nickel-manganese or rhodium-ruthenium alloy, but not in the form of This is the limit.

舉例而言,在本實施例中,金屬微結構120F適於接觸待測物50,以對待測物50進行測試,而待測物50例如是積體電路或半導體晶圓上的晶粒,但不以此為限。電路板130F例如是電性連接於產生測試訊號TS的測試機(未繪示),但不以此為限。也就是說,在本實施例中,探針卡100F例如是由測試機(未繪示)提供測試訊號TS,經由探針卡100F對一待測物50進行測試,但不以此為限。For example, in this embodiment, the metal microstructure 120F is suitable for contacting the object under test 50 for testing the object under test 50, and the object under test 50 is, for example, an integrated circuit or a crystal grain on a semiconductor wafer, but This is not the limit. The circuit board 130F is, for example, electrically connected to a testing machine (not shown) that generates the test signal TS, but not limited thereto. That is to say, in this embodiment, the probe card 100F is, for example, provided by a testing machine (not shown) with a test signal TS to test an object under test 50 through the probe card 100F, but it is not limited thereto.

值得一提的是,在本實施例中,由於金屬微結構120F設置且包覆於可撓無機材料層110F的上表面111F、下表面112F及第二側表面114F,使得金屬微結構120F能夠受到可撓無機材料層110F的支撐,讓探針卡100F的探針具有良好的強度及彈性且不易產生形變。據此,相較於既有技術以金屬製作的探針在面臨間距及針寬縮小時,易因受力變形產生永久變形而失效,本實施例的探針卡100F的探針可藉由可撓無機材料層110F的設置,使探針卡100F的探針仍具有良好的強度及彈性。It is worth mentioning that, in this embodiment, since the metal microstructure 120F is disposed and covered on the upper surface 111F, the lower surface 112F, and the second side surface 114F of the flexible inorganic material layer 110F, the metal microstructure 120F can be subjected to The support of the flexible inorganic material layer 110F makes the probes of the probe card 100F have good strength and elasticity and are not easily deformed. Accordingly, compared with the prior art probes made of metal, which are prone to permanent deformation and failure due to force deformation when the pitch and needle width are reduced, the probes of the probe card 100F in this embodiment can be The arrangement of the inorganic material layer 110F enables the probes of the probe card 100F to still have good strength and elasticity.

一般用於製作探針的金屬材料的屈服強度(yield strength)較低(約為70 MPa~300 MPa),因此在製作成微小垂直式探針後,易因探針受力彎曲而導致永久變形。在本實施例中,可撓無機材料層110F的材料具備足夠的屈服強度以支撐金屬微結構120F。在一實施例中,可撓無機材料層110F的材料的屈服強度(yield strength)例如是大於500 MPa,且可撓無機材料層110F的材料的楊氏係數例如是大於50 GPa,但不以此為限。在一實施例中,可撓無機材料層110F的材料的屈服強度例如是500 MPa至1200 MPa,可撓無機材料層110F的材料的楊氏係數例如是50 GPa至400 GPa。Generally, the yield strength of metal materials used to make probes is low (about 70 MPa~300 MPa), so after being made into tiny vertical probes, it is easy to cause permanent deformation due to force bending of the probes . In this embodiment, the material of the flexible inorganic material layer 110F has sufficient yield strength to support the metal microstructure 120F. In one embodiment, the yield strength of the material of the flexible inorganic material layer 110F is greater than 500 MPa, and the Young's modulus of the material of the flexible inorganic material layer 110F is greater than 50 GPa, but not necessarily limit. In one embodiment, the yield strength of the material of the flexible inorganic material layer 110F is, for example, 500 MPa to 1200 MPa, and the Young's modulus of the material of the flexible inorganic material layer 110F is, for example, 50 GPa to 400 GPa.

圖9為本揭露另一實施例的探針卡的局部放大側視剖面示意圖。請同時參考圖8B與圖9,本實施例的探針卡100G與圖8B的探針卡100F相似,但要注意的是,圖9的金屬微結構120G。FIG. 9 is a partially enlarged side cross-sectional schematic diagram of a probe card according to another embodiment of the present disclosure. Please refer to FIG. 8B and FIG. 9 at the same time. The probe card 100G in this embodiment is similar to the probe card 100F in FIG. 8B , but it should be noted that the metal microstructure 120G in FIG. 9 .

請參考圖9,在本實施例中,探針卡100G包括可撓無機材料層110F、金屬微結構120G及電路板130F。此處,探針卡100G的探針是由可撓無機材料層110F及金屬微結構120G所組成,適於傳送測試訊號TS。Please refer to FIG. 9 , in this embodiment, the probe card 100G includes a flexible inorganic material layer 110F, a metal microstructure 120G and a circuit board 130F. Here, the probes of the probe card 100G are composed of the flexible inorganic material layer 110F and the metal microstructure 120G, which are suitable for transmitting the test signal TS.

詳細而言,在本實施例中,金屬微結構120G設置且包覆於可撓無機材料層110F的上表面111F、下表面112F、第一側表面113F及第二側表面114F,且具有連接端121G。電路板130F沿平行Z軸方向連接至連接端121G,且測試訊號TS適於透過金屬微結構120G而導通至電路板130F。In detail, in this embodiment, the metal microstructure 120G is disposed and covered on the upper surface 111F, the lower surface 112F, the first side surface 113F and the second side surface 114F of the flexible inorganic material layer 110F, and has a connection end 121G. The circuit board 130F is connected to the connection terminal 121G along the direction parallel to the Z axis, and the test signal TS is adapted to be conducted to the circuit board 130F through the metal microstructure 120G.

在本實施例中,探針卡100G更包括多個導板170,且金屬微結構120G包括凸出部122G。導板170與凸出部122G的設計與圖8B之實施例相似,於此不再贅述。In this embodiment, the probe card 100G further includes a plurality of guide plates 170 , and the metal microstructure 120G includes a protrusion 122G. The design of the guide plate 170 and the protruding portion 122G is similar to that of the embodiment shown in FIG. 8B , and will not be repeated here.

在本實施例中,由於金屬微結構120G設置且包覆於可撓無機材料層110F的上表面111F、下表面112F、第一側表面113F及第二側表面114F,使得金屬微結構120G能夠受到可撓無機材料層110F的支撐,讓探針卡100G的探針具有良好的強度及彈性且不易產生形變。In this embodiment, since the metal microstructure 120G is disposed and covered on the upper surface 111F, the lower surface 112F, the first side surface 113F, and the second side surface 114F of the flexible inorganic material layer 110F, the metal microstructure 120G can be subjected to The support of the flexible inorganic material layer 110F makes the probes of the probe card 100G have good strength and elasticity and are not easily deformed.

圖10為本揭露另一實施例的探針卡的局部放大側視剖面示意圖。請同時參考圖8B與圖10,本實施例的探針卡100H與圖8B的探針卡100F相似,但要注意的是,圖10的金屬微結構120H。FIG. 10 is a partially enlarged side cross-sectional schematic view of a probe card according to another embodiment of the present disclosure. Please refer to FIG. 8B and FIG. 10 at the same time. The probe card 100H of this embodiment is similar to the probe card 100F in FIG. 8B , but it should be noted that the metal microstructure 120H in FIG. 10 .

請參考圖10,在本實施例中,探針卡100H包括可撓無機材料層110F、金屬微結構120H及電路板130F。此處,探針卡100H的探針是由可撓無機材料層110F及金屬微結構120H所組成,適於傳送測試訊號TS。Please refer to FIG. 10 , in this embodiment, the probe card 100H includes a flexible inorganic material layer 110F, a metal microstructure 120H and a circuit board 130F. Here, the probes of the probe card 100H are composed of the flexible inorganic material layer 110F and the metal microstructure 120H, which are suitable for transmitting the test signal TS.

詳細而言,在本實施例中,金屬微結構120H設置於可撓無機材料層110F的第二側表面114F,且具有連接端121H。電路板130F沿平行Z軸方向連接至連接端121H,且測試訊號TS適於透過金屬微結構120H而導通至電路板130F。In detail, in this embodiment, the metal microstructure 120H is disposed on the second side surface 114F of the flexible inorganic material layer 110F, and has a connection end 121H. The circuit board 130F is connected to the connection terminal 121H along the direction parallel to the Z axis, and the test signal TS is adapted to be conducted to the circuit board 130F through the metal microstructure 120H.

在本實施例中,探針卡100H更包括多個導板170,且金屬微結構120H包括凸出部122H。導板170與凸出部122H的設計與圖8B之實施例相似,於此不再贅述。In this embodiment, the probe card 100H further includes a plurality of guide plates 170 , and the metal microstructure 120H includes a protrusion 122H. The design of the guide plate 170 and the protruding portion 122H is similar to that of the embodiment shown in FIG. 8B , and will not be repeated here.

在本實施例中,由於金屬微結構120H設置於可撓無機材料層110F的第二側表面114F,使得金屬微結構120H能夠受到可撓無機材料層110F的支撐,讓探針卡100H的探針具有良好的強度及彈性且不易產生形變。In this embodiment, since the metal microstructure 120H is disposed on the second side surface 114F of the flexible inorganic material layer 110F, the metal microstructure 120H can be supported by the flexible inorganic material layer 110F, so that the probes of the probe card 100H It has good strength and elasticity and is not easy to deform.

綜上所述,在本揭露的探針卡的設計中,由於金屬微結構設置於可撓無機材料層,且測試訊號可沿金屬微結構而導通至電路板,使得金屬微結構在測試待側物時能夠受到可撓無機材料層的支撐,讓探針具有良好的強度及彈性且不易產生形變。據此,相較於既有技術以金屬製作的探針在面臨間距及針寬縮小時,易因受力變形產生永久變形而失效,本揭露的探針卡的探針可藉由可撓無機材料層的設置,使探針仍具有良好的強度及彈性,從而能夠增加探針卡的使用壽命並提升探針卡的測試可靠度。To sum up, in the design of the probe card of the present disclosure, since the metal microstructure is arranged on the flexible inorganic material layer, and the test signal can be conducted to the circuit board along the metal microstructure, the metal microstructure is on the side to be tested. The object can be supported by the flexible inorganic material layer, so that the probe has good strength and elasticity and is not easy to deform. Accordingly, compared with the probes made of metal in the prior art, which are prone to permanent deformation and failure due to force deformation when the pitch and pin width are reduced, the probes of the probe card disclosed in the present disclosure can be made of flexible inorganic The arrangement of the material layer enables the probe to still have good strength and elasticity, thereby increasing the service life of the probe card and improving the test reliability of the probe card.

雖然本揭露已以實施例揭露如上,然其並非用以限定本揭露,任何所屬技術領域中具有通常知識者,在不脫離本揭露的精神和範圍內,當可作些許的更動與潤飾,故本揭露的保護範圍當視後附的申請專利範圍所界定者為準。Although the present disclosure has been disclosed above with embodiments, it is not intended to limit the present disclosure. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present disclosure. The scope of protection of this disclosure should be defined by the scope of the appended patent application.

50:待測物50: The object to be tested

100、100A、100B、100C、100D、100E、100F、100G、100H:探針卡100, 100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H: probe card

110、110B、110F:可撓無機材料層110, 110B, 110F: flexible inorganic material layer

111:第一表面111: first surface

112:第二表面112: second surface

113:本體部113: Body Department

114:指叉部114: finger fork

115:導通孔115: via hole

116:第一側壁116: first side wall

117:第二側壁117: second side wall

111F:上表面111F: upper surface

112F:下表面112F: lower surface

113F:第一側表面113F: first side surface

114F:第二側表面114F: second side surface

120、120B、120C、120D、120E、120F、120G、120H:金屬微結構120, 120B, 120C, 120D, 120E, 120F, 120G, 120H: metal microstructure

121:金屬子結構121:Metal substructure

122、123D、122F、122G、122H:凸出部122, 123D, 122F, 122G, 122H: protruding part

123:第三表面123: third surface

121D、121E:第一微結構121D, 121E: the first microstructure

122D、122E:第二微結構122D, 122E: second microstructure

121F、121G、121H:連接端121F, 121G, 121H: connection end

130、130A、130F:電路板130, 130A, 130F: circuit board

131A:水平面131A: Horizontal plane

132A:傾斜面132A: inclined surface

133:接墊133: Pad

140:接合層140: bonding layer

150:第一導線層150: the first wire layer

160:第二導線層160: Second wire layer

170:導板170: guide plate

171:貫穿孔171: through hole

TS:測試訊號TS: test signal

T1、T2:厚度T1, T2: Thickness

L1:長度L1: length

D1、D2:距離D1, D2: distance

E1:第一端E1: first end

E2:第二端E2: second end

X-Y-Z:直角座標X-Y-Z: Cartesian coordinates

圖1為本揭露一實施例的探針卡的側視示意圖。 圖2為圖1的探針卡的立體示意圖。 圖3為本揭露另一實施例的探針卡的側視示意圖。 圖4為本揭露另一實施例的探針卡的側視示意圖。 圖5為本揭露另一實施例的探針卡的側視示意圖。 圖6為本揭露另一實施例的探針卡的側視示意圖。 圖7為本揭露另一實施例的探針卡的側視示意圖。 圖8A為本揭露另一實施例的探針卡的側視剖面示意圖。 圖8B為圖8A的探針卡的局部放大示意圖。 圖9為本揭露另一實施例的探針卡的局部放大側視剖面示意圖。 圖10為本揭露另一實施例的探針卡的局部放大側視剖面示意圖。 FIG. 1 is a schematic side view of a probe card according to an embodiment of the present disclosure. FIG. 2 is a schematic perspective view of the probe card in FIG. 1 . FIG. 3 is a schematic side view of a probe card according to another embodiment of the present disclosure. FIG. 4 is a schematic side view of a probe card according to another embodiment of the present disclosure. FIG. 5 is a schematic side view of a probe card according to another embodiment of the present disclosure. FIG. 6 is a schematic side view of a probe card according to another embodiment of the present disclosure. FIG. 7 is a schematic side view of a probe card according to another embodiment of the present disclosure. FIG. 8A is a schematic side sectional view of a probe card according to another embodiment of the present disclosure. FIG. 8B is a partially enlarged schematic view of the probe card in FIG. 8A . FIG. 9 is a partially enlarged side cross-sectional schematic diagram of a probe card according to another embodiment of the present disclosure. FIG. 10 is a partially enlarged side cross-sectional schematic view of a probe card according to another embodiment of the present disclosure.

100:探針卡 100: probe card

110:可撓無機材料層 110: flexible inorganic material layer

111:第一表面 111: first surface

112:第二表面 112: second surface

115:導通孔 115: via hole

120:金屬微結構 120:Metal microstructure

122:凸出部 122: protruding part

123:第三表面 123: third surface

130:電路板 130: circuit board

133:接墊 133: Pad

140:接合層 140: bonding layer

TS:測試訊號 TS: test signal

T1:厚度 T1: Thickness

L1:長度 L1: Length

X-Y-Z:直角座標 X-Y-Z: Cartesian coordinates

Claims (17)

一種探針卡,包括:一可撓無機材料層,具有相對的一第一表面及一第二表面;一金屬微結構,設置於該第一表面上;以及一電路板,設置於該第二表面上,該電路板電性連接於該金屬微結構,一測試訊號適於透過該金屬微結構而導通至該電路板;其中,該可撓無機材料層的材料的屈服強度大於500MPa或該可撓無機材料層的材料的楊氏係數大於50Gpa,其中該可撓無機材料層的材料包括玻璃或陶瓷,其中該可撓無機材料層的厚度介於30微米至300微米之間。 A probe card, comprising: a flexible inorganic material layer, having a first surface and a second surface opposite; a metal microstructure, arranged on the first surface; and a circuit board, arranged on the second surface On the surface, the circuit board is electrically connected to the metal microstructure, and a test signal is suitable for conduction to the circuit board through the metal microstructure; wherein, the yield strength of the material of the flexible inorganic material layer is greater than 500MPa or the flexible The Young's modulus of the material of the flexible inorganic material layer is greater than 50 GPa, wherein the material of the flexible inorganic material layer includes glass or ceramics, wherein the thickness of the flexible inorganic material layer is between 30 microns and 300 microns. 如請求項1所述的探針卡,其中該可撓無機材料層包括一本體部及多個指叉部,該金屬微結構包括多個金屬子結構,該些金屬子結構相對應且連接於該些指叉部,該些指叉部連接於該本體部的一側,且各該金屬子結構適於與相對應的該指叉部沿一方向往該本體部延伸。 The probe card as claimed in item 1, wherein the flexible inorganic material layer includes a body portion and a plurality of fork portions, the metal microstructure includes a plurality of metal substructures, and the metal substructures are corresponding to and connected to The prongs are connected to one side of the main body, and each metal substructure is adapted to extend toward the main body along a direction with the corresponding prongs. 如請求項2所述的探針卡,更包括:一導通孔,位於該可撓無機材料層的該本體部並貫穿該第一表面與該第二表面,該導通孔連接至各該金屬子結構及該電路板,且各該金屬子結構設置於該第一表面及該導通孔上,該測試訊號透過該金屬微結構並沿著該導通孔而導通至該電路板。 The probe card as claimed in claim 2, further comprising: a via hole, located at the body portion of the flexible inorganic material layer and passing through the first surface and the second surface, the via hole is connected to each of the metal sub-surfaces structure and the circuit board, and each of the metal substructures is disposed on the first surface and the via hole, and the test signal is conducted to the circuit board through the metal microstructure and along the via hole. 如請求項2所述的探針卡,其中該金屬微結構包括多個凸出部,各該凸出部設置於相對應的該金屬子結構,且位在相對於該第一表面的一第三表面。 The probe card as claimed in item 2, wherein the metal microstructure includes a plurality of protrusions, each of which is disposed on the corresponding metal substructure and is located at a first position relative to the first surface Three surfaces. 如請求項1所述的探針卡,更包括:一第一導線層,設置於該可撓無機材料層的該第二表面及該可撓無機材料層靠近該電路板的一第一側壁上,且該第一導線層連接該金屬微結構及該電路板,其中該測試訊號透過該金屬微結構並經由該第一導線層而導通至該電路板。 The probe card according to claim 1, further comprising: a first wire layer disposed on the second surface of the flexible inorganic material layer and on a first side wall of the flexible inorganic material layer close to the circuit board , and the first wire layer connects the metal microstructure and the circuit board, wherein the test signal passes through the metal microstructure and conducts to the circuit board through the first wire layer. 如請求項1所述的探針卡,更包括:一第二導線層,設置於該可撓無機材料層的該第二表面及該可撓無機材料層的遠離該電路板的一第二側壁上,且該第二導線層連接該金屬微結構及該電路板,其中該測試訊號透過該金屬微結構並經由該第二導線層而導通至該電路板。 The probe card according to claim 1, further comprising: a second wire layer disposed on the second surface of the flexible inorganic material layer and a second side wall of the flexible inorganic material layer away from the circuit board and the second wire layer connects the metal microstructure and the circuit board, wherein the test signal passes through the metal microstructure and conducts to the circuit board through the second wire layer. 如請求項1所述的探針卡,其中該金屬微結構包括一凸出部,該凸出部設置對應於該可撓無機材料層的一端。 The probe card as claimed in claim 1, wherein the metal microstructure includes a protrusion, and the protrusion is disposed corresponding to one end of the flexible inorganic material layer. 如請求項7所述的探針卡,其中該凸出部的材料包括鎳鈷磷、鎳鈷、鎳錳或銠釕合金。 The probe card according to claim 7, wherein the material of the protruding portion includes nickel-cobalt-phosphorus, nickel-cobalt, nickel-manganese or rhodium-ruthenium alloy. 如請求項1所述的探針卡,其中該電路板具有相對的一水平面及一傾斜面,該可撓無機材料層的該第二表面連接該電路板的該傾斜面,該可撓無機材料層相對於該第二表面具有相對 的一第一端及一第二端,且該第一端至該水平面的垂直距離與該第二端至該水平面的垂直距離的差值介於50微米至500微米之間。 The probe card as claimed in item 1, wherein the circuit board has a horizontal surface and an inclined surface opposite to each other, the second surface of the flexible inorganic material layer is connected to the inclined surface of the circuit board, and the flexible inorganic material layer layer with respect to the second surface has an opposite A first end and a second end, and the difference between the vertical distance from the first end to the horizontal plane and the vertical distance from the second end to the horizontal plane is between 50 microns and 500 microns. 如請求項9所述的探針卡,其中該傾斜面相對於該水平面的傾斜度數為1.5度至6度。 The probe card according to claim 9, wherein the degree of inclination of the inclined surface relative to the horizontal plane is 1.5 degrees to 6 degrees. 如請求項1所述的探針卡,更包括位於該可撓無機材料層與該電路板之間的一接合層,該接合層的材料包括ABF(Ajinomoto Build-up Film)、錫、錫合金或銀膠。 The probe card as described in claim 1 further includes a bonding layer between the flexible inorganic material layer and the circuit board, and the material of the bonding layer includes ABF (Ajinomoto Build-up Film), tin, tin alloy or silver glue. 如請求項1所述的探針卡,其中該可撓無機材料層的長度與該可撓無機材料層的厚度的比值介於9至30之間。 The probe card according to claim 1, wherein the ratio of the length of the flexible inorganic material layer to the thickness of the flexible inorganic material layer is between 9 and 30. 一種探針卡,包括:一可撓無機材料層,具有多個表面;一金屬微結構,設置於該些表面的至少一者,且具有一連接端;一電路板,連接該連接端,其中一測試訊號適於透過該金屬微結構而導通至該電路板;以及至少二導板,各該導板具有多個貫穿孔,且該可撓無機材料層及該金屬微結構穿過各該導板的該些貫穿孔;其中,該可撓無機材料層的材料的屈服強度大於500MPa或該可撓無機材料層的材料的楊氏係數大於50GPa,其中該可撓無機材料層的材料包括玻璃或陶瓷。 A probe card, comprising: a flexible inorganic material layer having multiple surfaces; a metal microstructure disposed on at least one of the surfaces and having a connection end; a circuit board connected to the connection end, wherein A test signal is suitable for conducting to the circuit board through the metal microstructure; and at least two guide plates, each of which has a plurality of through holes, and the flexible inorganic material layer and the metal microstructure pass through each of the guide plates The through holes of the plate; wherein, the yield strength of the material of the flexible inorganic material layer is greater than 500MPa or the Young’s modulus of the material of the flexible inorganic material layer is greater than 50GPa, wherein the material of the flexible inorganic material layer includes glass or ceramics. 如請求項13所述的探針卡,其中該金屬微結構包括一凸出部,該凸出部位在相對於該連接端的一端。 The probe card as claimed in claim 13, wherein the metal microstructure includes a protrusion, and the protrusion is at an end opposite to the connecting end. 如請求項14所述的探針卡,其中該凸出部的材料包括鎳鈷磷、鎳鈷、鎳錳或銠釕合金。 The probe card as claimed in claim 14, wherein the material of the protrusion includes nickel-cobalt-phosphorus, nickel-cobalt, nickel-manganese or rhodium-ruthenium alloy. 如請求項14所述的探針卡,其中該可撓無機材料層的該些表面包括:相對的一上表面與一下表面以及相連於該上表面與該下表面的一第一側表面與一第二側表面,該金屬微結構設置且包覆於該上表面、該下表面及該第二側表面。 The probe card as claimed in claim 14, wherein the surfaces of the flexible inorganic material layer include: an upper surface and a lower surface opposite to each other, and a first side surface and a first side surface connected to the upper surface and the lower surface On the second side surface, the metal microstructure is arranged and covered on the upper surface, the lower surface and the second side surface. 如請求項14所述的探針卡,其中該可撓無機材料層的該些表面包括:相對的一上表面與一下表面以及相連於該上表面與該下表面的一第一側表面與一第二側表面,該金屬微結構設置且包覆於該上表面、該下表面、該第一側表面及該第二側表面。The probe card as claimed in claim 14, wherein the surfaces of the flexible inorganic material layer include: an upper surface and a lower surface opposite to each other, and a first side surface and a first side surface connected to the upper surface and the lower surface On the second side surface, the metal microstructure is arranged and covered on the upper surface, the lower surface, the first side surface and the second side surface.
TW110148853A 2021-12-27 2021-12-27 Probe card TWI802178B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200916791A (en) * 2007-07-03 2009-04-16 Advantest Corp Probe, probe card and process for manufacturing probe
US20090263710A1 (en) * 2008-04-18 2009-10-22 Fumio Kato Aa alkaline battery
CN108572265A (en) * 2017-03-14 2018-09-25 旺矽科技股份有限公司 Micro-electromechanical probe, manufacturing method thereof and probe head with micro-electromechanical probe
TW201932845A (en) * 2018-01-17 2019-08-16 義大利商探針科技公司 Cantilever contact probe and corresponding probe head

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200916791A (en) * 2007-07-03 2009-04-16 Advantest Corp Probe, probe card and process for manufacturing probe
US20090263710A1 (en) * 2008-04-18 2009-10-22 Fumio Kato Aa alkaline battery
CN108572265A (en) * 2017-03-14 2018-09-25 旺矽科技股份有限公司 Micro-electromechanical probe, manufacturing method thereof and probe head with micro-electromechanical probe
TW201932845A (en) * 2018-01-17 2019-08-16 義大利商探針科技公司 Cantilever contact probe and corresponding probe head
US20200348337A1 (en) * 2018-01-17 2020-11-05 Technoprobe S.P.A. Cantilever contact probe and corresponding probe head

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