TWI802133B - Plating method and plating device - Google Patents

Abstract

The present invention provides a technique for removing air bubbles attached to pores of an ion resister. The plating method of the present invention includes: in the state of immersing the anode and the ion resister in the plating solution, stirring the plating solution by driving the paddle arranged above the ion resister (step S20); Immerse the substrate as the cathode in the plating solution while the blade is stirring the plating solution (step S40); in the state of immersing the substrate in the plating solution, make the paddle disposed above the ion resister and below the substrate Stirring the plating solution again (step S50 ); and in the state where the paddles start stirring the plating solution again, current is passed between the substrate and the anode, and the substrate is plated (step S60 ).

Description

Plating method and plating device

The invention relates to a plating method and a plating device.

Conventionally, a so-called cup-type plating apparatus has been known as a plating apparatus capable of performing a plating process on a substrate (for example, refer to Patent Document 1). Such a plating device includes: a plating tank for storing a plating solution; a substrate holder for holding a substrate serving as a cathode; a rotation mechanism for rotating the substrate holder; and an elevating mechanism for elevating the substrate holder.

In addition, conventionally, for example, in order to achieve in-plane uniformity of the film thickness of the plating film, there is known a technique of arranging an ion resister having a plurality of holes inside the plating tank (for example, refer to Patent Document 2). [Prior Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2008-19496 [Patent Document 2] Japanese Unexamined Patent Publication No. 2004-363422

(Problem to be solved by the invention)

In the case where the ion resister is arranged inside the plating tank of the cup-type plating device as exemplified in the above-mentioned Patent Document 1, if a large number of bubbles contained in the plating solution in the plating tank adhere to the holes of the ion resister, The plating quality of the substrate may be deteriorated due to air bubbles attached to the hole.

One of the objects of the present invention is to provide a technology capable of removing air bubbles adhering to pores of an ion resister in view of the above circumstances. (a means of solving a problem) (pattern 1)

In order to achieve the above object, the plating method of one aspect of the present invention includes: supplying a plating solution in a plating tank equipped with an anode and an ion resister that is arranged above the anode and has a plurality of holes, so that The aforementioned anode and the aforementioned ion resister are immersed in the plating solution; in the state where the aforementioned anode and the aforementioned ion resister are immersed in the plating solution, the plating solution is stirred by driving the paddle arranged above the aforementioned ion resister ; In the state where the aforementioned paddles stop stirring the plating solution, the substrate as the cathode is immersed in the plating solution; in the state of immersing the aforementioned substrate in the plating solution, arrange it above the aforementioned ion resister and than the aforementioned The paddle below the substrate starts to stir the plating solution again; and in the state where the paddle starts to stir the plating solution again, the substrate is plated by passing current between the substrate and the anode.

In this mode, for example, when the plating solution is supplied to the plating tank, even if the bubbles contained in the plating solution adhere to the holes of the ion resister, the plating solution can be stirred by the paddle to promote the adhesion to the holes. Bubbles move upwards. Thereby, air bubbles adhering to the pores of the ion resist can be removed.

In addition, when adopting this aspect, since the substrate is immersed in the plating solution while the paddles are not stirring the plating solution, it is also possible to prevent the substrate from being agitated by the paddles when the substrate is immersed in the plating solution. The liquid surface of the plating solution is wavy. Thereby, it is also possible to suppress a large amount of air bubbles from adhering to the substrate when the substrate is immersed in the plating solution.

In addition, according to this aspect, since the paddle starts agitating the plating solution again while the substrate is immersed in the plating solution, the plating solution can be efficiently supplied to the substrate. Thereby, for example, the plating solution can effectively replace the pre-wet treatment solution remaining inside the wiring pattern of the substrate.

In addition, according to this aspect, since the plating process is performed in a state where the paddles start stirring the plating solution again, the plating solution can be efficiently supplied to the substrate during the plating process. Thereby, a plated film can be efficiently formed on the substrate. (state 2)

The above aspect 1 further includes overflowing the plating solution from the plating tank in a state where the paddles stop stirring the plating solution, and immersing the substrate in the plating solution while the paddles stop stirring the plating solution. liquid, it may be performed after overflowing the plating liquid from the above-mentioned plating tank.

In this aspect, the air bubbles floating above the specific ion resister can be discharged to the outside of the plating tank together with the plating liquid overflowing from the plating tank. Thereby, it is possible to effectively suppress air bubbles from adhering to the substrate when the substrate is immersed in the plating solution. (state 3)

The above-mentioned state 1 or state 2 may further include: after performing the plating treatment on the aforementioned substrate, picking up the aforementioned substrate from the plating solution; The aforementioned paddles arranged above the aforementioned ion resister stir the plating solution; in the state where the aforementioned paddles stop stirring the plating solution, the second substrate is immersed in the plating solution; after the aforementioned second substrate is immersed in the plating solution In the state where the liquid is covered, the paddle disposed above the ion resister and below the second substrate starts stirring the plating solution again; and in the state where the paddle starts stirring the plating liquid again, by A current is passed between the second substrate and the anode, and a plating process is performed on the second substrate. (state 4)

In any one of the above-mentioned aspects 1 to 3, the substrate is immersed in the plating solution in the state where the paddles stop agitating the plating solution, and the state where the paddles stop agitating the plating solution may also be included. , and in a state where the surface to be plated of the substrate is inclined in the horizontal direction, the substrate is immersed in the plating solution. (state 5)

In the above aspect 4, it further includes returning the surface to be plated of the substrate immersed in the plating solution to the horizontal direction, and causing the paddle to start agitating the plating solution again while the substrate is immersed in the plating solution. Alternatively, it may be performed after returning the surface to be plated of the substrate immersed in the plating solution to the horizontal direction.

If the paddle starts stirring the plating solution again when the plated surface of the substrate is tilted in the horizontal direction, because the top of the plated surface of the substrate in the tilted state is close to the liquid level of the plating solution, the paddle starts stirring again When the surface of the plating solution is wavy, air bubbles may be easily drawn into the surface to be plated of the substrate. In contrast, when this aspect is adopted, since the paddle starts to stir the plating solution again after the surface to be coated of the substrate immersed in the plating solution is returned to the horizontal direction, even if the paddle starts to stir the plating solution again, When the plating solution is stirred and the surface of the plating solution becomes wavy, it can still effectively suppress the air bubbles from being involved in the plated surface of the substrate. (pattern 6)

In the above-mentioned aspect 1, when the plating solution is stirred by driving the paddle in the state where the anode and the ion resister are immersed in the plating solution, the plurality of holes are passed from the underside of the ion resister. Furthermore, the flow rate of the plating solution flowing toward the upper side of the ion resister may be greater than the flow rate of the plating solution when the plating process is performed on the substrate.

With this aspect, air bubbles adhering to the pores of the ion resist can be effectively removed. (state 7)

In any one of the above-mentioned aspects 1 to 6, the aforementioned paddles may also be alternately driven in a first direction parallel to the upper surface of the ion resister and in a second direction opposite to the aforementioned first direction to stir the plating liquid. (state 8)

In the above-mentioned aspect 7, the aforementioned paddles may also have a honeycomb structure, which is provided with a plurality of stirring members having polygonal through-holes extending in the up and down direction, and the plurality of aforementioned stirring members have, when viewed from above: a quadrangular angular portion; The first protruding portion protrudes from the side of the angular portion in the first direction in an arc shape to the first direction side; and the second protruding portion protrudes from the side surface of the angular portion on the second direction side It protrudes from the side in the second direction in an arc shape.

In this aspect, since the blades have a honeycomb structure, the arrangement density of a plurality of stirring members can be easily increased. Thereby, since the plating solution can be stirred efficiently by the paddle, the air bubbles adhering to the pores of the ion resister can be effectively removed.

In addition, when adopting this aspect, since the plurality of agitating members of the paddles have: an angular portion, a first protruding portion, and a second protruding portion, therefore, for example, a plurality of agitating members have an angular portion without the first protruding Compared with the second protruding part, the area where the paddle can be stirred when the paddle moves at a certain distance can be easily expanded. Thereby, since the plating solution can be efficiently stirred by the paddle, it is possible to more effectively remove air bubbles adhering to the pores of the ion resister. (pattern 9)

In the above-mentioned aspect 8, the paddle width of the maximum value of the distance between the aforementioned first protruding portion and the aforementioned second protruding portion may also be wider than the outer edge of the plated surface of the aforementioned substrate in the aforementioned first direction and The substrate width of the maximum value of the distance between the outer edges in the second direction is small.

With this aspect, for example, compared with when the width of the blade is the same as that of the base plate or wider than that of the base plate, the moving distance of the blade in the first direction and the second direction can be increased. Thereby, since the plating liquid can be more efficiently stirred by the paddle, the air bubbles adhering to the pores of the ion resister can be effectively removed. (pattern 10)

In order to achieve the above object, the coating device of one aspect of the present invention has: a coating tank, which is equipped with an anode, and an ion resister that is disposed above the anode and has a plurality of holes; a substrate holder, which is Hold the substrate as the cathode; and paddles, which are arranged above the ion resister and below the substrate, in a first direction parallel to the upper surface of the ion resister and in a second direction opposite to the first direction The two directions are alternately driven to stir the coating solution stored in the aforementioned coating tank; the aforementioned paddle has a honeycomb structure, which is equipped with a plurality of stirring members with polygonal through holes extending in the up and down direction, and a plurality of The aforesaid stirring member has, when viewed from above: a quadrangular angular portion; a first protruding portion protruding from the side of the aforesaid first direction side in an arc shape at the aforesaid angular portion to the aforesaid first direction side; and a second protruding portion, It protrudes from the side surface of the angular part on the side of the second direction in an arc shape to the side of the second direction.

In this aspect, even if air bubbles are attached to the pores of the ion resist, the stirring of the plating solution by the paddles can promote the upward movement of the air bubbles attached to the holes. Thereby, air bubbles adhering to the pores of the ion resist can be removed.

In addition, when adopting this aspect, since the plurality of stirring members of the paddle has a honeycomb structure, and the plurality of stirring members of the paddle have angular parts, first protruding parts, and second protruding parts, as mentioned above, it can be achieved by The paddles are more effective in stirring the plating solution, which can effectively remove the air bubbles attached to the holes of the ion resister. (pattern 11)

In the above-mentioned aspect 10, the blade width of the maximum value of the distance between the aforementioned first protruding portion and the aforementioned second protruding portion may also be wider than the outer edge of the plated surface of the aforementioned substrate in the aforementioned first direction and the width of the paddle. The substrate width of the maximum value of the distance between the outer edges in the second direction is small.

(implementation form)

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the drawings are schematically shown for easy understanding of the characteristics of the constituent elements, and the dimensional ratios of the respective constituent elements are not necessarily the same as the actual ones. In addition, the orthogonal coordinates of X-Y-Z are shown in some drawings for reference. In the orthogonal coordinates, the Z direction corresponds to the upper side, and the −Z direction corresponds to the lower side (the direction in which gravity acts).

FIG. 1 is a perspective view showing the overall configuration of a plating apparatus 1000 according to this embodiment. FIG. 2 is a plan view showing the overall configuration of a plating apparatus 1000 according to this embodiment. As shown in Figures 1 and 2, the plating device 1000 is equipped with: a loading port 100, a transfer robot 110, an aligner 120, a pre-wetting module 200, a pre-dipping module 300, a plating module 400, a cleaning Module 500 , spin dryer 600 , conveying device 700 , and control module 800 .

The loading port 100 is a module for carrying substrates stored in a cassette such as a FOUP (not shown) into the plating apparatus 1000 or carrying substrates out of the plating apparatus 1000 to the cassette. In this embodiment, four load ports 100 are arranged horizontally, but the number and arrangement of the load ports 100 are arbitrary. The transport robot 110 is a robot for transporting substrates, and is configured to receive and receive substrates between the loading port 100 , the aligner 120 , the pre-wetting module 200 and the spin dryer 600 . When the transfer robot 110 and the transfer device 700 receive and receive substrates between the transfer robot 110 and the transfer device 700 , the transfer of the substrate can be performed through a temporary stand (not shown).

The aligner 120 is a module used to align the positions of the orientation planes or notches of the substrate in a predetermined direction. In this embodiment, two aligners 120 are arranged in a row in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. The pre-wetting module 200 wets the plated surface of the substrate before the plating process with a treatment solution such as pure water or degassed water, thereby replacing the air inside the pattern formed on the surface of the substrate with the treatment solution. The pre-wetting module 200 is configured to perform pre-wetting treatment for easily supplying the plating solution to the inside of the pattern by replacing the treatment solution inside the pattern with the plating solution during plating. In this embodiment, two pre-humidity modules 200 are arranged vertically, but the number and arrangement of the pre-humidity modules 200 are arbitrary.

The prepreg module 300 is configured to perform, for example, an oxide film with high resistance formed on the surface of the seed layer of the plated surface of the substrate before the plating process, etch and remove it with a treatment solution such as sulfuric acid or hydrochloric acid, and then the plated The surface of the substrate is cleaned or activated with a pre-dip treatment. In this embodiment, two prepreg modules 300 are arranged vertically, but the number and arrangement of prepreg modules 300 are arbitrary. The plating module 400 performs plating treatment on the substrate. In this embodiment, there are 2 sets of 12 coating modules 400 arranged in an up-and-down direction and 4 units in a horizontal direction, and a total of 24 coating modules 400 are provided. The number and configuration of the modules 400 are arbitrary.

The cleaning module 500 is configured to perform cleaning treatment on the substrate so as to remove the plating solution and the like remaining on the substrate after the plating treatment. In this embodiment, two cleaning modules 500 are arranged vertically, but the number and arrangement of cleaning modules 500 are arbitrary. The spin dryer 600 is a module for drying the cleaned substrate by rotating it at high speed. In this embodiment, two spin dryers 600 are arranged vertically, but the number and arrangement of spin dryers 600 are arbitrary. The transfer device 700 is a device for transferring substrates between a plurality of modules in the coating device 1000 . The control module 800 is configured as a plurality of modules for controlling the plating apparatus 1000, and can be configured by a general computer or a dedicated computer having an input/output interface with an operator, for example.

An example of a series of plating processes performed by the plating apparatus 1000 will be described below. First, the substrates accommodated in the cassette are loaded into the load port 100 . Next, the transfer robot 110 takes out the substrate from the cassette of the loading port 100 and transfers the substrate to the aligner 120 . The aligner 120 aligns the positions of the orientation flats and notches of the substrate in a predetermined direction. The transfer robot 110 receives and receives the substrate aligned by the aligner 120 to the transfer device 700 .

The pre-wet module 200 performs pre-wet treatment on the substrate. The transport device 700 transports the substrates received by the transport robot 110 to the pre-wetting module 200 . The transfer device 700 transfers the pre-wetted substrate to the prepreg module 300 . The prepreg module 300 performs prepreg treatment on the substrate. The transport device 700 transports the prepreg-treated substrate to the coating module 400 . The plating module 400 performs plating treatment on the substrate.

The transfer device 700 transfers the plated substrate to the cleaning module 500 . The cleaning module 500 performs cleaning processing on the substrate. The transfer device 700 transfers the cleaned substrate to the spin dryer 600 . The spin dryer 600 performs drying treatment on the substrate. The transfer robot 110 receives the substrates from the spin dryer 600 , and transfers the dried substrates to the cassette of the loading port 100 . Finally, the cassette containing the substrate is carried out from the loading port 100 .

In addition, the structure of the plating apparatus 1000 demonstrated in FIG. 1 and FIG. 2 is just an example, and the structure of the plating apparatus 1000 is not limited to the structure of FIG. 1 and FIG. 2.

Next, the plating module 400 will be described. In addition, since the plurality of coating modules 400 included in the coating device 1000 of this embodiment have the same configuration, only a single coating module 400 will be described.

FIG. 3 is a schematic diagram showing the configuration of the coating module 400 in the coating device 1000 of the present embodiment. Specifically, FIG. 3 schematically shows the plating module 400 in a state before the substrate Wf is immersed in the plating solution Ps. FIG. 4 is a schematic diagram showing a state where the substrate Wf is immersed in the plating solution Ps. In addition, an enlarged view of part A1 is also shown in a part of FIG. 4 , but the illustration of the paddle 70 described later is omitted in the enlarged view of part A1 .

The coating device 1000 of this embodiment is a cup-type coating device. The coating module 400 of the coating device 1000 includes: a coating tank 10 , an overflow tank 20 , a substrate holder 30 , and paddles 70 . In addition, as shown in FIG. 3 , the coating module 400 may also include: a rotating mechanism 40 , a tilting mechanism 45 , and a lifting mechanism 50 .

The plating tank 10 of this embodiment is comprised by the bottomed container which has an opening in the upper part. Specifically, the coating tank 10 has: a bottom wall 10a; an outer peripheral wall 10b extending upward from the outer peripheral edge of the bottom wall 10a; and an upper opening of the outer peripheral wall 10b. In addition, the shape of the outer peripheral wall 10b of the coating tank 10 is not specifically limited, However, An example of the outer peripheral wall 10b of this embodiment has a cylindrical shape. The plating solution Ps is stored inside the plating tank 10 . The coating tank 10 is provided with a supply port 13 for supplying the plating solution Ps in the coating tank 10 .

The plating liquid Ps should just be a solution containing the ion of the metal element which comprises a plating film, and the specific example is not specifically limited. In this embodiment, an example of the plating treatment is a copper plating treatment, and an example of the plating solution Ps is a copper sulfate solution. In addition, specified additives may also be contained in the plating solution Ps.

An anode 11 is arranged inside the coating tank 10 . The specific type of the anode 11 is not particularly limited, and it can also be an insoluble anode or a soluble anode. An example of the anode 11 of this embodiment uses an insoluble anode. The specific type of the insoluble anode is not particularly limited, and platinum, iridium oxide, and the like can be used.

Inside the plating tank 10 , an ion resist 12 is disposed above the anode 11 . Specifically, as shown in FIG. 4 (enlarged view of part A1), the ion resister 12 is constituted by a porous plate member having a plurality of holes 12a (fine pores). The hole 12a is provided so as to connect the lower surface and the upper surface of the ion resister 12 . As shown in FIG. 3 , a region in which a plurality of pores 12 a are formed in the ion resist body 12 is referred to as a "pore formation region PA". The hole formation area PA of this embodiment has a circular shape in planar view. In addition, the area of the hole formation area PA in this embodiment is the same as the area of the surface to be plated Wfa of the substrate Wf, or larger than the area of the surface to be plated Wfa. However, it is not limited to this configuration, and the area of the hole formation region PA may be smaller than the area of the surface to be plated Wfa of the substrate Wf.

The ion resister 12 is provided to uniformize the electric field formed between the anode 11 and the substrate Wf (symbols are shown in FIG. 6 described later) serving as a cathode. By arranging the ion resister 12 in the plating tank 10 as in the present embodiment, the film thickness of the plating film (plating layer) formed on the substrate Wf can be easily uniformed.

The overflow tank 20 is constituted by a bottomed container disposed outside the coating tank 10 . The overflow tank 20 is provided for temporarily storing the plating solution Ps overflowing the upper end of the outer peripheral wall 10 b of the plating tank 10 (that is, the plating solution Ps overflowing from the plating tank 10 ). The plating solution Ps stored in the overflow tank 20 is discharged from the discharge port 14, passes through the flow path 15, and is temporarily stored in the storage tank 80 (see FIG. 4 ). The plating solution Ps stored in the storage tank 80 is then pressure-fed by the pump 81 (see FIG. 4 ), and then circulated from the supply port 13 to the plating tank 10 again.

The plating module 400 may also include a level detector 60 a for detecting the liquid level of the plating solution Ps in the plating tank 10 . The detection result of the level detector 60 a is sent to the control module 800 .

In addition, the plating module 400 may also include a flow detector 60 b for detecting the flow rate (L/min) of the plating solution Ps overflowing from the plating tank 10 . The detection result of the flow detector 60 b is sent to the control module 800 . In addition, the specific arrangement location of the flow detector 60b is not particularly limited, and an example of the flow detector 60b in this embodiment is arranged in the flow path 15 connecting the outlet 14 of the overflow tank 20 and the storage tank 80 .

The substrate holder 30 holds the substrate Wf which is a cathode so that the surface Wfa to be plated of the substrate Wf faces the anode 11 . In the present embodiment, the surface to be plated Wfa of the substrate Wf is specifically provided on the surface (lower surface) facing the lower side of the substrate Wf.

As shown in FIG. 3, the board|substrate holder 30 may have the ring 31 provided so that it may protrude below the outer peripheral edge of the surface Wfa to be plated of the board|substrate Wf. Specifically, the ring 31 of this embodiment has a ring shape in bottom view.

The substrate holder 30 is connected to the rotation mechanism 40 . The rotation mechanism 40 is a mechanism for rotating the substrate holder 30 . “R1” illustrated in FIG. 3 is an example of the rotation direction of the substrate holder 30 . The rotation mechanism 40 can use a known rotation motor or the like. The tilt mechanism 45 is a mechanism for tilting the rotation mechanism 40 and the substrate holder 30 . The elevating mechanism 50 is supported by a support shaft 51 extending in the vertical direction. The elevating mechanism 50 is a mechanism for elevating the substrate holder 30 , the rotating mechanism 40 , and the tilting mechanism 45 in the vertical direction. As the lifting mechanism 50, known lifting mechanisms such as direct-acting actuators can be used.

In addition, as shown in FIG. 12 , the membrane 16 may be disposed above the anode 11 and below the ion resister 12 inside the plating tank 10 . At this time, the inside of the coating tank 10 is divided by the membrane 16 into an anode chamber 17 a below the membrane 16 and a cathode chamber 17 b above the membrane 16 . The anode 11 is arranged in the anode chamber 17a, and the ion resister 12 is arranged in the cathode chamber 17b. The film 16 is configured to allow the ion species including metal ions contained in the plating solution Ps to pass through the film 16 and to prevent the non-ionic plating additive contained in the plating solution Ps from passing through the film 16 . As such a membrane 16 , for example, an ion exchange membrane can be used.

In addition, when the inside of the coating tank 10 is divided into the anode chamber 17a and the cathode chamber 17b by the membrane 16, it is preferable to provide the supply ports 13 in the anode chamber 17a and the cathode chamber 17b, respectively. In addition, a discharge port 14a for discharging the plating solution Ps from the anode chamber 17a is preferably provided in the anode chamber 17a.

FIG. 5 is a schematic top view of the paddle 70 . Referring to FIG. 3 , FIG. 4 and FIG. 5 , the paddle 70 is disposed above the ion resister 12 and below the substrate Wf. The paddle 70 is driven by a driving device 77 . The plating solution Ps in the plating tank 10 is stirred by driving the paddle 70 .

An example of the paddle 70 of this embodiment is the "first direction (an example of this embodiment is the X direction)" parallel to the upper surface of the ion resister 12, and the "second direction (this embodiment is the X direction)" opposite to the first direction. One example of the shape is -X direction)" interactive drive. That is, an example of the paddle 70 of this embodiment moves back and forth in the X-axis direction. The driving action of the paddle 70 is controlled by the control module 800 .

As shown in FIG. 5 , an example of the paddle 70 of this embodiment has a plurality of stirring members 71 a extending in a direction (Y-axis direction) perpendicular to the first direction and the second direction of the paddle 70 . A gap is provided between adjacent stirring members 71a. One end of the some stirring member 71a is connected to the connection member 72a, and the other end is connected to the connection member 72b.

The paddle 70 is preferably configured such that the moving area MA of the paddle 70 (that is, the range in which the paddle 70 reciprocates) covers the entire hole forming area PA of the ion resister 12 when the plating solution Ps is stirred. With this configuration, the plating solution Ps above the hole formation area PA of the ion resister 12 can be efficiently stirred by the paddle 70 .

In addition, the paddle 70 may be disposed inside the coating tank 10 at least when the plating solution Ps is stirred, and does not always need to be disposed inside the coating tank 10 . For example, when the drive of the paddle 70 is stopped and the paddle 70 does not stir the plating solution Ps, the paddle 70 may not be arranged inside the coating tank 10 .

The control module 800 is equipped with a microcomputer including: a CPU (Central Processing Unit) 801 as a processor; and a memory device 802 as a permanent memory medium. The control module 800 controls the action of the coating module 400 by operating the CPU 801 as a processor according to the instructions of the program stored in the memory device 802 .

However, bubbles Bu are generated in the plating solution Ps of the plating tank 10 . Specifically, for example, when the plating solution Ps is supplied to the plating tank 10 , when air flows into the plating tank 10 together with the plating solution Ps, the air may become bubbles Bu.

As described above, when bubbles Bu are generated in the plating solution Ps of the plating tank 10 , the bubbles Bu adhere to the pores 12 a of the ion resister 12 . If the plating process is performed on the substrate Wf in a state where a large number of bubbles Bu are attached to the holes 12a, the quality of plating of the substrate Wf may deteriorate due to the bubbles Bu. Therefore, this embodiment uses the technique described below in order to deal with this problem.

FIG. 6 is an example of a flowchart for explaining the plating method of this embodiment. The plating method of this embodiment includes step S10 to step S60. In addition, the plating method of this embodiment can also be automatically executed by the control module 800 . In addition, before starting to execute step S10 of this embodiment, the inside of the plating tank 10 does not store the plating solution Ps, or, even if the inside of the plating tank 10 stores the plating solution Ps, the plating tank 10 The liquid surface of the plating solution Ps is located below the specific ion resister 12 .

In step S10 , the anode 11 and the ion resister 12 are immersed in the plating solution Ps by supplying the plating solution Ps to the plating tank 10 . Specifically, in this embodiment, the plating solution Ps is supplied from the supply port 13 to the plating tank 10, and the anode 11 and the ion resister 12 are immersed in the plating solution Ps.

In addition, in step S10, the liquid level position of the plating solution Ps can also be obtained according to the detection result of the aforementioned level detector 60a. Before a predetermined position above 12, the plating solution Ps is supplied to the plating tank 10.

Or, in step S10, the flow rate of the plating solution Ps overflowing from the plating tank 10 can also be obtained according to the detection result of the aforementioned flow detector 60b, and before it is judged that the obtained flow rate is a specified flow rate greater than zero, The plating solution Ps is supplied to the plating tank 10 . At this time, the liquid surface of the plating solution Ps in the plating tank 10 is positioned above the anode 11 and the ion resister 12, so that the anode 11 and the ion resister 12 can be immersed in the plating solution Ps.

Step S20 is executed after step S10. Specifically, after the plating solution Ps is started to be supplied to the plating tank 10 in step S10, when the liquid level of the plating solution Ps in the plating tank 10 reaches a position where the plating solution Ps can be stirred by the paddle 70 ( For example, when the liquid level of the plating solution Ps is above the paddle 70 ), step S20 is executed.

In step S20 , the plating solution Ps is stirred by the paddle 70 by driving the paddle 70 disposed above the ion resister 12 and below the substrate Wf. That is, in step S20 , the plating solution Ps is started to be stirred by the paddle 70 . Specifically, in this embodiment, the plating solution Ps is stirred by alternately driving the paddles 70 in the first direction and the second direction.

In this embodiment, for example, when the plating solution Ps is supplied to the plating tank 10, even if bubbles Bu contained in the plating solution Ps adhere to the holes 12a of the ion resister 12, by using the paddle in step S20, 70 Stirring the plating solution Ps can still promote the upward movement of the bubbles Bu. Thereby, bubbles Bu adhering to the pores 12 a of the ion resister 12 can be removed.

In addition, from the viewpoint of effectively removing bubbles Bu adhering to the holes 12a of the ion resister 12, the plating solution flowing from the lower face of the ion resister 12 toward the upper face of the ion resister 12 through the plurality of holes 12a Ps flow rate (L/min) should be more.

Therefore, for example, it is preferable to make the flow rate of the plating solution Ps flowing toward the upper side of the ion resister 12 from the lower side of the ion resister 12 through the plurality of holes 12a in step S20 to be higher than the flow rate of the plating solution Ps flowing from the ion resister 12 in step S60 described later. The flow rate of the plating solution Ps flowing toward the upper side of the ion resister 12 through the plurality of holes 12a on the lower side of the ion resister 12 is large. With this configuration, bubbles Bu adhering to the pores 12a of the ion resister 12 can be effectively removed.

In addition, for example, by increasing the number of revolutions of the pump 81 (this is a pump for pressure-feeding the plating solution Ps in the storage tank 80 toward the coating tank 10), the rotation between the storage tank 80 and the coating tank 10 can be increased. The circulating flow rate of the plating solution Ps circulating between them. Thereby, since the flow rate of the plating solution Ps flowing inside the plating tank 10 can be increased, the plating flowing from the lower side of the ion resister 12 to the upper side of the ion resister 12 through the plurality of holes 12a can be increased. The flow rate of liquid Ps.

That is, in this embodiment, the circulating flow rate (L/min) of the plating solution Ps in step S20 should be higher than the circulating flow rate of the plating solution Ps in step S60 (this is referred to as "reference flow rate (L/min)") Thereby, the flow rate of the plating solution Ps flowing toward the upper side of the ion resister 12 through the plurality of holes 12a from the lower side of the ion resister 12 in step S20 is higher than that from the lower side of the ion resister 12 in step S60. The flow rate of the plating solution Ps flowing toward the upper surface side of the ion resister 12 through the plurality of holes 12a is large. As a result, bubbles Bu adhering to the holes 12a of the ion resister 12 can be effectively removed.

Step S30 is executed after step S20. In step S30, the drive of the paddle 70 is stopped, and the paddle 70 is stopped from stirring the plating solution Ps.

In addition, the specific example of the time from the start of stirring with the paddle 70 in step S20 to the stop of stirring with the paddle 70 in step S30 (that is, the stirring time of the paddle 70) is not particularly limited, for example, it can be used from 2 seconds Select the specified time between more than one minute and less than 10 seconds. Thus, according to this embodiment, the bubbles Bu adhering to the holes 12a of the ion resister 12 can be removed only by stirring the plating solution Ps with the paddle 70 for a short time.

Step S40 is executed after step S30. In step S40 , the substrate Wf is immersed in the plating solution Ps in a state where the paddle 70 stops stirring the plating solution Ps. Specifically, in the present embodiment, the substrate holder 30 is lowered by the elevating mechanism 50, and at least the surface to be plated Wfa of the substrate Wf is immersed in the plating solution Ps.

As in the present embodiment, since the substrate Wf is immersed in the plating solution Ps in step S40 in the state where the paddle 70 stops stirring the plating solution Ps in step S30, it is possible to prevent the substrate Wf from immersing in the plating solution Ps. Because the paddle 70 stirs the plating solution Ps, the liquid surface of the plating solution Ps becomes wavy. Thereby, when the substrate Wf is immersed in the plating solution Ps, a large amount of air bubbles Bu can be suppressed from adhering to the surface to be plated Wfa of the substrate Wf.

In addition, in step S40, the substrate holder 30 may be tilted in such a manner that the surface to be coated Wfa of the substrate Wf is inclined to the horizontal direction by the tilt mechanism 45 (that is, the surface to be coated Wfa is inclined to the horizontal plane). In this state, the surface to be plated Wfa of the substrate Wf is brought into contact with the plating solution Ps. According to this structure, compared with the case where the surface Wfa to be plated is in contact with the plating solution Ps when the surface to be plated Wfa of the substrate Wf is in the horizontal direction, the adhesion of air bubbles Bu to the surface to be plated Wfa can be effectively suppressed.

Step S50 is executed after step S40. In step S50 , the paddle 70 is restarted to stir the plating solution Ps in a state where the substrate Wf is immersed in the plating solution Ps. Specifically, in the present embodiment, the paddle disposed above the ion resister 12 and below the substrate Wf is alternately driven in the first direction and the second direction while the substrate Wf is immersed in the plating solution Ps. 70, so that the paddle 70 starts stirring the plating solution Ps again.

In this way, by restarting the paddle 70 to stir the plating solution Ps in a state where the substrate Wf is immersed in the plating solution Ps, the plating solution Ps can be efficiently supplied to the surface Wfa to be plated of the substrate Wf. Thereby, for example, the plating solution Ps can effectively replace the pre-wet treatment solution remaining inside the wiring pattern on the surface Wfa to be plated of the substrate Wf.

In addition, as mentioned above, in step S40, when the surface Wfa to be plated is brought into contact with the plating solution Ps while the surface Wfa to be plated is tilted, it is preferable to make the paddle 70 start agitating the plating solution Ps again in step S50. This is performed after returning the surface to be plated Wfa of the substrate Wf immersed in the plating solution Ps to the horizontal direction. That is, at this time, in step S40, the surface to be plated Wfa of the substrate Wf is brought into contact with the plating solution Ps in a state where the surface to be plated Wfa is inclined, and then the surface to be plated Wfa of the substrate Wf is returned to the horizontal direction (this referred to as "step S45"), and then in step S50, the paddle 70 is started to stir the plating solution Ps.

Here, if the paddle 70 starts to stir the plating solution Ps again when the surface Wfa to be coated of the substrate Wf is inclined to the horizontal direction, because the upper end of the surface Wfa to be plated of the substrate Wf in the inclined state (beyond the surface Wfa to be plated) The upper end of the outer edge) is close to the liquid level of the plating solution Ps. When the paddle 70 starts to stir the plating solution Ps again and the liquid level of the plating solution Ps becomes wavy, the surface Wfa to be plated of the substrate Wf may be easily involved in air bubbles. no. In contrast, when this configuration is adopted, the paddle 70 starts stirring the plating solution Ps again after returning the surface Wfa to be plated of the substrate Wf immersed in the plating solution Ps to the horizontal direction. When the leaf 70 starts to stir the plating solution Ps again and the surface of the plating solution Ps becomes wavy, it can still effectively prevent the surface Wfa to be plated of the substrate Wf from being entangled with bubbles Bu.

Step S60 is executed after step S50. In step S60, in the state where the plating solution Ps is stirred again by the paddle 70 (that is, in the state where the plating solution Ps is stirred by the paddle 70), the anode 11 is placed between the substrate Wf A current is passed, and a plating process is performed on the surface Wfa to be plated of the substrate Wf. Thereby, a plating film made of metal is formed on the surface to be plated Wfa.

As in step S60, when performing the plating process on the substrate Wf, the plating solution Ps is stirred by the paddle 70, and the plating solution Ps can be effectively supplied to the plated surface Wfa of the substrate Wf during the plating process. Thereby, a plated film can be efficiently formed on the substrate Wf.

In addition, the plating process on the substrate Wf in step S60 can also be started at the same time when the paddle 70 starts to stir the plating solution Ps again in step S50 . Alternatively, the plating process on the substrate Wf in step S60 may be started after a predetermined period of time has elapsed since the stirring of the plating solution Ps was restarted in step S50. The specific value of the predetermined time is not particularly limited, for example, it is preferable to use enough time for the plating solution Ps to spread to the via holes (Via or through holes) of the wiring pattern formed on the surface Wfa to be plated of the substrate Wf. When an example of such a designated time is given, for example, a time selected from between 30 seconds and 60 seconds can be used.

In addition, in step S60 , the rotation mechanism 40 can also rotate the substrate holder 30 . In addition, in step S60, the tilt mechanism 45 may tilt the substrate holder 30 so that the surface Wfa to be plated of the substrate Wf tilts to the horizontal direction.

In addition, the reciprocating speed of the blade 70 in step S20 (the first reciprocating speed) and the reciprocating speed of the blade 70 in steps S50 and S60 (the second reciprocating speed) can also be the same value, or Department of different values. When the reciprocating speed of the paddle 70 in step S20 is different from the reciprocating speed of the paddle 70 in step S50 and step S60, it may be faster or slower in step S20 than in step S50 and step S60.

However, the faster the reciprocating speed of the paddle 70, the higher the effect of removing air bubbles tends to be. In addition, generally, the amount of bubbles Bu adhering to the pores 12a of the ion resister 12 is larger before step S20 is started than before step S50 is started. Therefore, from the viewpoint of effectively removing the holes 12a adhering to the ion resister 12, it is preferable to make the moving speed of the paddle 70 in step S20 faster than the reciprocating speed of the paddle 70 in steps S50 and S60.

The specific values of the reciprocating speed of the paddle 70 in step S20, step S50, and step S60 are not particularly limited, but when an example is given, the value selected from the range of more than 25 (rpm) and less than 400 (rpm) can be used Specifically, a value selected from the range of 100 (rpm) to 300 (rpm), more specifically, a value selected from the range of 150 (rpm) to 250 (rpm) can be used. Here, the so-called "reciprocating speed system N (rpm) of the paddle 70" specifically means that the paddle 70 performs N times of reciprocation within 1 minute (that is, the paddle 70 starts from a specified position, such as at After moving in the first direction, move in the second direction, move in the first direction again and return to the specified position).

In addition, the flow shown in FIG. 6 may also be executed when new plating solution Ps (unused plating solution) is supplied to the plating tank 10 during maintenance of the plating apparatus 1000 , for example. Or, the flow process of Fig. 6, for example, can also be in the operation of plating device 1000, for some reason, causes the storage capacity of the plating solution Ps of plating tank 10 to reduce, and the liquid level of plating solution Ps is positioned at the specific ion resistance body 12, while replenishing the plating bath 10 with the plating solution Ps.

According to the present embodiment described above, bubbles Bu adhering to the pores 12a of the ion resister 12 can be removed. Thereby, deterioration of the plating quality of the substrate Wf due to the attached bubbles Bu can be suppressed. (Modification 1)

Fig. 7 is an example of a flowchart for explaining the plating method of Modification 1 of the embodiment. The difference between the plating method of this modified example shown in FIG. 7 and the plating method illustrated in FIG. 6 is that a step S35 is further included between step S30 and step S40 .

In step S35 , the plating solution Ps is overflowed from the plating tank 10 in a state where the stirring of the plating solution Ps by the paddle 70 is stopped.

Specifically, in this modified example, the plating solution Ps is overflowed from the plating tank 10 by supplying the plating solution Ps from the supply port 13 . The plating solution Ps overflowing from the plating tank 10 flows into the overflow tank 20 . In addition, step S35 only needs to be executed within a preset specified time. The specific example of the specified time is not particularly limited, and for example, a time selected from 2 seconds to 120 seconds can be used.

In this modified example, since step S35 is executed, the bubbles Bu floating above the specific ion resister 12 can be discharged from the coating tank 10 together with the overflowing plating solution Ps to the outside of the coating tank 10 . Thereby, when the substrate Wf is immersed in the plating solution Ps in step S40 , the adhesion of bubbles Bu to the substrate Wf can be effectively suppressed.

In addition, in this step S35, the flow rate of the plating solution Ps supplied to the plating tank 10 can also be compared with the "reference flow rate (L /min)" more or less, or the same.

However, when the flow rate of the plating solution Ps supplied to the plating tank 10 in step S35 is more than the reference flow rate, it is more appropriate than not. Therefore, the flow rate of the plating solution Ps in the plating tank 10 can be increased in step S35. The bubbles Bu are discharged to the outside of the coating tank 10 at an early stage. (Modification 2)

FIG. 8 is an example of a flow chart for explaining the plating method of Modification 2 of the embodiment. The process in FIG. 8 is executed after the aforementioned step S60 in FIG. 6 is executed. The difference between the plating method of this modified example and the foregoing plating method in FIG. 6 is that after step S60 is executed, step S70 , step S80 , step S90 , step S100 , step S110 , and step S120 are further executed.

In step S70, after performing the plating process on the substrate Wf, the substrate Wf is picked up from the plating solution Ps. Specifically, in this modified example, the substrate Wf is picked up from the plating solution Ps by moving the substrate holder 30 upward by the elevating mechanism 50 .

Next, in step S80 , the plating solution Ps is agitated by driving the paddle 70 arranged above the specific ion resister 12 in a state in which the substrate Wf is picked up from the plating solution Ps. In addition, since the driving state of the paddle 70 in step S80 is the same as the driving state of the paddle 70 in the aforementioned step S20, the detailed description of step S80 is omitted.

According to this modified example, in the state before immersing the second substrate Wf′ described later in the plating solution Ps, even when bubbles Bu contained in the plating solution Ps adhere to the holes 12a of the ion resister 12, the paddle The leaf 70 stirs the plating solution Ps in step S80, which can still promote the upward movement of the bubbles Bu. Thereby, bubbles Bu adhering to the pores 12 a of the ion resister 12 can be removed.

Next, in step S90, the paddle 70 is stopped from stirring the plating solution Ps. Next, in step S100 , the “second substrate Wf′” is immersed in the plating solution Ps in a state where the paddle 70 stops stirring the plating solution Ps. In addition, the second substrate Wf′ is a substrate to be plated next to the plated substrate Wf in step S60. In this modified example, the specific configuration of the second substrate Wf′ is the same as that of the substrate Wf. In addition, the step S100 is the same as the aforementioned step S40 except that the second substrate Wf′ is used instead of the substrate Wf. Therefore, the detailed description of step S100 is omitted.

When this modified example is adopted, since in step S100, the second substrate Wf' is immersed in the plating solution Ps in the state where the paddle 70 stops stirring the plating solution Ps, the second substrate Wf' can be suppressed from being plated. When the liquid Ps is dipped, the liquid surface of the plating liquid Ps waves. Thereby, a large amount of air bubbles Bu can be suppressed from adhering to the surface to be plated Wfa of the second substrate Wf′.

Next, in step S110 , in a state where the second substrate Wf′ is immersed in the plating solution Ps, the paddle 70 starts stirring the plating solution Ps again. Specifically, by alternately driving the paddle 70 arranged above the ion resister 12 and below the second substrate Wf′ in the first direction and the second direction, the paddle 70 starts to stir the plating solution Ps again. . In addition, step S110 is the same as step S50 except that the second substrate Wf′ is used instead of the substrate Wf. Therefore, the detailed description of step S110 is omitted.

Next, in step S120, in the state where the paddle 70 starts to stir the plating solution Ps again, by passing a current between the second substrate Wf′ and the anode 11, the surface Wfa to be plated of the second substrate Wf′ is subjected to Plating treatment. Thereby, a plating film made of metal is formed on the surface Wfa to be plated of the second substrate Wf′. In addition, the step S120 is the same as the aforementioned step S60 except that the second substrate Wf′ is used instead of the substrate Wf. Therefore, the detailed description of step S120 is omitted. As in step S120, when the plating process is performed on the second substrate Wf', the plating solution Ps is stirred by the paddle 70, and the plating solution Ps can be effectively supplied to the plated surface Wfa of the second substrate Wf' during the plating process. . Thereby, the plated film can be efficiently formed on the second substrate Wf′.

In addition, when the plating process is continued on the third substrate after the plating process is performed on the second substrate Wf′, it is only necessary to perform the same process as that in FIG. 8 again on the third substrate.

In addition, in this modified example, the aforementioned step S35 in FIG. 7 may also be executed between step S90 and step S100 . In this case, the effects of the invention of the aforementioned modification 1 can be further achieved. (Modification 3)

Fig. 9 is a schematic plan view of a blade 70A according to Modification 3 of the embodiment. The paddle 70A of this modified example differs from the paddle 70 illustrated in FIG. 5 above in that in addition to "a plurality of stirring members 71a (that is, the first stirring member group)", it is further equipped with a larger than the stirring member 71a. "a plurality of stirring members 71b, 71c, 71d, 71e (that is, the second stirring member group)" having a short length in the direction.

Specifically, the paddle 70A of this modified example includes stirring members 71b, 71c, 71d, and 71e on the side in the first direction and the side in the second direction of the plurality of stirring members 71a, respectively.

In addition, as shown in FIG. 9 , the stirring members 71b, 71c, 71d, and 71e may also have shorter lengths in the extending direction as they are farther away from the stirring member 71a. In addition, one end of the stirring members 71b, 71c, 71d, and 71e may also be connected to the connection member 72c, and the other end may also be connected to the connection member 72d.

When adopting this modified example, since the paddle 70A is provided with stirring members 71b, 71c, 71d, 71e, therefore, for example, compared with the paddle 70 of FIG. .

In addition, the plating apparatus 1000 having the paddle 70A of this modified example executes the flow described above with reference to FIG. 6 . In addition, in the aforementioned modification 1 and modification 2, the paddle 70A of this modification may also be used instead of the paddle 70 . (Modification 4)

Fig. 10 is a schematic plan view of a blade 70B according to Modification 4 of the embodiment. The paddle 70B of this modified example differs from the paddle 70 illustrated in FIG. 5 in that it has: a plurality of stirring members 71f extending in a designated direction; and a connecting member 72e connecting the two ends of each stirring member 71f; and the connecting member 72e It has a ring shape when viewed from above.

In addition, the difference between the paddle 70B of this modified example and the paddle 70 illustrated in FIG. 5 is that the driving device 77 a and the driving device 77 b are driven in a manner of rotating in a horizontal plane. Specifically, the driving device 77a alternately drives the connecting member 72e of the paddle 70B in the Y direction and the −Y direction. The driving device 77b alternately drives the connection member 72e in the -Y direction and the Y direction. Thereby, the paddle 70B uses the center of the ring-shaped connecting member 72e as the center of rotation, and in the horizontal plane, rotates in the first rotation direction (for example, clockwise in plan view) and in the second rotation direction opposite to the first rotation direction. (e.g. counterclockwise when looking down) interactive rotation.

Since the plating solution Ps can still be stirred by the paddle 70B in this modified example, the air bubbles Bu adhering to the holes 12a of the ion resister 12 can be removed.

In addition, the plating apparatus 1000 having the paddle 70B of this modified example executes the process described above with reference to FIG. 6 . In addition, in the aforementioned modification 1 and modification 2, the paddle 70B of this modification may also be used instead of the paddle 70 . (Modification 5)

Fig. 11 is a schematic plan view of a blade 70C according to Modification 5 of the embodiment. The paddle 70C of this modified example differs from the paddle 70 illustrated in FIG. 5 in that it has a plurality of stirring members 73 having a honeycomb structure. In addition, the paddle 70C of this modified example is illustrated in FIG. 11, and further includes: a covering frame 75, and outer frames 76a, 76b.

Each stirring member 73 has a polygonal through-hole 73 a extending in the vertical direction (vertical direction). The specific shape of the polygon of the through hole 73a is not particularly limited, and various N-gons (N is a natural number of 3 or more) such as a triangle, a square, a pentagon, a hexagon, a heptagon, and an octagon can be used. This modified example uses a hexagon as an example of a polygon.

Moreover, the some stirring member 73 has the angular part 74a which has the quadrangular shape in planar view. Specifically, the angular portion 74 a of the present modification has a rectangular shape extending in the horizontal direction and having a direction (Y-axis direction) perpendicular to the first direction and the second direction as the length direction. However, it is not limited to this configuration, and the angular portion 74a may have a rectangular shape whose longitudinal direction is the first direction and a second direction, or may have a square shape.

In addition, the plurality of stirring members 73 have: a first protruding portion 74b protruding from the side surface on the first direction side of the angular portion 74a in the first direction; and protruding in the second direction from a side surface on the second direction side of the angular portion 74a. The second protruding portion 74c on the side. That is to say, the outer edges of the plurality of stirring members 73 in this modified example present an appearance shape having an angular portion 74a, a first protruding portion 74b, and a second protruding portion 74c when viewed from above. The first protruding portion 74 b of the present modification protrudes on the first direction side in an arcuate shape (in other words, arcuate shape). Further, the second protruding portion 74c of the present modification protrudes on the second direction side in an arcuate shape (in other words, arcuate).

The covering frame 75 is provided so as to cover the outer edges of the plurality of stirring members 73 . The outer frame 76 a is connected to one side (Y direction side) side surface of the covering frame 75 . The outer frame 76b is connected to the other side (the −Y direction side) side surface of the covering frame 75 . The paddle 70C is connected to the driving device 77 and alternately driven in the first direction and the second direction by the driving device 77 . Specifically, in the blade 70C of this modification, the outer frame 76b of the blade 70C is connected to the driving device 77 .

Since the plating solution Ps can still be stirred by the paddle 70C in this modified example, the air bubbles Bu adhering to the holes 12a of the ion resister 12 can be removed.

In addition, with this modified example, since the paddle 70 has a honeycomb structure, it is separated from the paddle 70C without a honeycomb structure, for example, by a rod-shaped or plate-shaped member extending in a direction perpendicular to the driving direction of the paddle 70C. When it is configured (for example, in the case of FIG. 5 ), the arrangement density of the plurality of stirring members 73 can be increased. Thereby, the plating solution Ps can be effectively stirred by the paddle 70C. As a result, bubbles Bu adhering to the pores 12a of the ion resister 12 can be effectively removed.

In addition, when adopting this modified example, since the plurality of agitating members 73 of the paddle 70C have: the angular portion 74a, the first protruding portion 74b, and the second protruding portion 74c, therefore, although the plurality of agitating members 73 have the angular portion 74a without the first protruding portion 74b and the second protruding portion 74c, the area where the paddle 70C can be stirred when the paddle 70C moves at a certain distance can be enlarged.

In addition, the "paddle width D2" of the maximum value of the distance between the first protruding portion 74b and the second protruding portion 74c can also be compared with the outer edge of the plated surface Wfa of the substrate Wf in the first direction and the outer edge in the second direction. The "substrate width D1" (the symbol is shown in Fig. 3 as an example) of the maximum value of the edge distance may be larger or smaller than it. Alternatively, the paddle width D2 may be the same value as the substrate width D1.

However, when the paddle width D2 is smaller than the substrate width D1, compared with when the paddle width D2 is the same as the substrate width D1 or larger than the substrate width D1, the gap between the paddle 70C and the outer peripheral wall 10b of the coating tank 10 can be largely ensured. gap. As a result, the moving distance of the paddle 70C in the first direction and the second direction inside the coating tank 10 (that is, the stroke when the paddle 70C moves back and forth) can be increased. Thereby, since the plating solution Ps can be stirred efficiently by the paddle 70C, the air bubbles Bu adhering to the hole 12a of the ion resister 12 can be efficiently removed. From this point of view, the blade width D2 is preferably smaller than the substrate width D1.

In addition, when the surface to be plated Wfa of the substrate Wf is circular, the substrate width D1 corresponds to the diameter of the surface to be plated Wfa. When the surface Wfa to be plated of the substrate Wf is quadrangular, the substrate width D1 corresponds to the maximum value of the distance between the side of the surface to be plated Wfa in the first direction and the side opposite to the side (side in the second direction).

The plating apparatus 1000 having the paddle 70C of this modified example executes the process illustrated in FIG. 6 above. However, it is not limited to this constituent. When citing another example, the plating device 1000 of this modified example can also be used only when the plating solution Ps is supplied to the plating tank 10 (step S10, step S20); and when the substrate Wf is subjected to plating treatment (steps S50, Step S60 ); when one of them is performed, the plating solution Ps is stirred by the paddle 70C. In addition, in the aforementioned modification 1 ( FIG. 7 ) and modification 2 ( FIG. 8 ), the paddle 70C of this modification can also be used instead of the paddle 70 .

The embodiments and modifications of the present invention have been described in detail above, but the present invention is not limited to the specific embodiments and modifications, and various modifications and changes are possible within the scope of the invention described in the claims.

10: Plating tank

10a: bottom wall

10b: peripheral wall

11: anode

12: ion resister

12a: hole

13: Supply port

14: outlet

14a: Outlet

15: flow path

16: Membrane

17a: Anode chamber

17b: cathode chamber

20: overflow tank

30: Substrate holder

31: ring

40: Rotary mechanism

45: Tilt mechanism

50: Lifting mechanism

51: pivot

60a: level detector

60b: Flow detector

70,70A,70B,70C: paddle

71a, 71b, 71c, 71d, 71e, 71f: stirring member

72a, 72b, 72c, 72d, 72e: connecting components

73: Stirring member

73a: Through hole

74a: Angular part

74b: The first protrusion

74c: Second protrusion

75: covered frame

76a, 76b: outer frame

77,77a,77b: drive unit

80: storage tank

81: pump

400: Plating module

800: Control module

801: CPU (Central Processing Unit)

802: memory device

1000: Plating device

Bu: Bubbles

D1: substrate width

D2: Blade width

MA: mobile area

PA: pore forming area

Ps: plating solution

Wf: Substrate

Wf´: second substrate

Wfa: plated surface

Fig. 1 is a perspective view showing the overall configuration of a plating apparatus according to an embodiment. Fig. 2 is a plan view showing the overall configuration of the coating device of the embodiment. Fig. 3 is a schematic diagram showing the configuration of a plating module in the plating apparatus of the embodiment. Fig. 4 is a schematic view showing a state in which the substrate of the embodiment is immersed in a plating solution. Fig. 5 is a schematic top view of the blade of the embodiment. Fig. 6 is an example of a flowchart for explaining the plating method of the embodiment. Fig. 7 is an example of a flowchart for explaining the plating method of Modification 1 of the embodiment. FIG. 8 is an example of a flow chart for explaining the plating method of Modification 2 of the embodiment. Fig. 9 is a schematic top view of a paddle according to Modification 3 of the embodiment. Fig. 10 is a schematic top view of a paddle according to Modification 4 of the embodiment. Fig. 11 is a schematic plan view of a blade according to Modification 5 of the embodiment. Fig. 12 is a schematic cross-sectional view showing an example of the internal structure of the coating tank according to the embodiment when a film is placed inside the coating tank.

Claims (9)

A plating method comprising: supplying a plating solution to a plating tank provided with an anode and an ion resister disposed above the anode and having a plurality of holes, and immersing the anode and the ion resister in the Plating solution: In the state where the aforementioned anode and the aforementioned ion resister are immersed in the plating solution, the plating solution is stirred by driving the paddle arranged above the aforementioned ion resister; when the aforementioned paddle stops stirring the plating In the state of the liquid, the substrate as the cathode is immersed in the plating solution; in the state of immersing the substrate in the plating solution, the paddle arranged above the ion resister and below the substrate is stirred again. a plating solution; and performing a plating process on the substrate by passing an electric current between the substrate and the anode in a state where the paddles start stirring the plating solution again. The coating method according to claim 1, further comprising overflowing the coating solution from the coating tank when the paddles stop stirring the coating solution, and using the coating solution while the paddles stop stirring the coating solution The immersion of the substrate in the plating solution may be performed after overflowing the plating solution from the plating tank. The plating method according to claim 1, which further includes: after performing the plating treatment on the aforementioned substrate, picking up the aforementioned substrate from the plating solution; in the state of picking up the aforementioned substrate from the plating solution, driving The aforementioned paddles arranged above the aforementioned ion resister stir the plating solution; when the aforementioned paddles stop stirring the plating solution, immerse the second substrate in the plating solution; In the state where the second substrate is immersed in the plating solution, the paddle disposed above the ion resister and below the second substrate starts stirring the plating solution again; and restarts stirring the paddle In the state of the plating solution, a plating process is performed on the second substrate by passing an electric current between the second substrate and the anode. The plating method according to claim 1, wherein the substrate is immersed in the plating solution in the state where the paddles stop stirring the plating solution, it may also be included in the state where the paddles stop stirring the plating solution, and in The said board|substrate is immersed in a plating solution in the state which tilted the surface to be plated of the said board|substrate in a horizontal direction. The plating method according to claim 4, further comprising returning the surface to be plated of the substrate immersed in the plating solution to the horizontal direction, and restarting the paddle while the substrate is immersed in the plating solution Stirring the plating solution may be performed after returning the surface to be plated of the substrate immersed in the plating solution to the horizontal direction. The plating method according to claim 1, wherein when the anode and the ion resist are immersed in the plating solution, and the plating solution is stirred by driving the paddle, the ion resist passes under the ion resist The flow rate of the plating solution flowing toward the upper surface of the ion resist through the plurality of holes is greater than the flow rate of the plating solution when the plating process is performed on the substrate. The plating method according to claim 1, wherein the paddles are alternately driven in a first direction parallel to the upper surface of the ion resister and in a second direction opposite to the first direction to stir the plating solution. The coating method of claim 7, wherein the aforementioned paddle has a honeycomb structure, which is equipped with a plurality of stirring members with polygonal through-holes extending in the up-down direction, A plurality of the aforementioned stirring members have, when viewed from above: a quadrangular corner; a first protruding part protruding from the side of the aforementioned first direction in an arc shape at the aforementioned corner to the side of the first direction; and a second protrusion A portion that protrudes from the side surface of the angular portion on the side in the second direction in an arc shape to the side in the second direction. The coating method according to claim 8, wherein the paddle width of the maximum distance between the aforementioned first protruding portion and the aforementioned second protruding portion is greater than that of the plated surface of the aforementioned substrate to be plated in the aforementioned first direction The maximum value of the distance between the outer edge of the outer edge and the outer edge in the second direction is smaller than the substrate width.

Images