TWI768749B - Coating apparatus and method for removing air bubbles in coating apparatus - Google Patents
Coating apparatus and method for removing air bubbles in coating apparatus Download PDFInfo
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Abstract
〔課題〕本發明提供一種技術,其可抑制基板之鍍覆品質因滯留於基板被鍍覆面之氣泡而惡化。 〔解決手段〕本發明之鍍覆裝置1000具備:貯存鍍覆液,並且在內部配置有陽極11之鍍覆槽10;配置於比陽極還上方,並保持作為陰極之基板讓基板之被鍍覆面朝向下方,並且具有比基板之被鍍覆面的外周緣還突出於下方之環31的基板固持器30;使基板固持器旋轉之旋轉機構40;及使基板固持器升降之升降機構50;在環之下面的一部分配置有朝向下方側而突出之至少1個突起35。 [Problem] The present invention provides a technique capable of suppressing deterioration of the plating quality of a substrate due to air bubbles remaining on the surface to be plated of the substrate. [Solution] The plating apparatus 1000 of the present invention includes: a plating tank 10 storing a plating solution and arranging an anode 11 inside; an anode 11 disposed above the anode, and a substrate serving as a cathode that holds the substrate to be plated on the surface A substrate holder 30 facing downward and having a ring 31 protruding beyond the outer periphery of the plated surface of the substrate; a rotation mechanism 40 for rotating the substrate holder; and a lifting mechanism 50 for raising and lowering the substrate holder; At least one protrusion 35 protruding toward the downward side is arranged on a part of the lower surface.
Description
本發明係關於一種鍍覆裝置及鍍覆裝置之氣泡去除方法。The present invention relates to a coating device and a bubble removing method of the coating device.
過去,作為對基板實施鍍覆處理之鍍覆裝置,習知有所謂杯式的鍍覆裝置(例如,參照專利文獻1)。此種鍍覆裝置具備:貯存鍍覆液並且在內部配置有陽極之鍍覆槽;配置於比陽極還上方,保持作為陰極之基板讓基板之鍍覆面朝向下方的基板固持器;使基板固持器旋轉之旋轉機構;及使基板固持器升降之升降機構。此外,此種鍍覆裝置之基板固持器具有比基板之被鍍覆面的外周緣還突出於下方之環。 〔先前技術文獻〕 〔專利文獻〕 Conventionally, as a plating apparatus for performing a plating process on a substrate, a so-called cup type plating apparatus has been known (for example, refer to Patent Document 1). Such a plating apparatus includes: a plating tank for storing a plating solution and arranging an anode inside; a substrate holder that is arranged above the anode and holds a substrate serving as a cathode so that the plating surface of the substrate faces downward; the substrate holder A rotating mechanism for rotation; and a lifting mechanism for raising and lowering the substrate holder. In addition, the substrate holder of this coating apparatus has a ring which protrudes further below than the outer periphery of the coated surface of the substrate. [Prior Art Literature] [Patent Documents]
〔專利文獻1〕日本特開2008-19496號公報[Patent Document 1] Japanese Patent Laid-Open No. 2008-19496
〔發明所欲解決之問題〕[Problems to be Solved by Invention]
如上述之杯式的鍍覆裝置中,由於某些原因會在鍍覆槽之鍍覆液中產生氣泡。此時,該氣泡會有滯留於基板的被鍍覆面之虞。特別是在基板固持器中設有如上述之環時,因為鍍覆液之氣泡要越過環並不容易,氣泡滯留於基板之被鍍覆面的可能性變高。如此,在氣泡滯留於基板之被鍍覆面時,基板之鍍覆品質會有因為該滯留的氣泡而惡化之虞。In the cup-type plating apparatus as described above, air bubbles are generated in the plating solution of the plating tank for some reasons. At this time, the air bubbles may remain on the plated surface of the substrate. In particular, when the above-mentioned ring is provided in the substrate holder, it is difficult for the bubbles of the plating solution to pass over the ring, and the possibility of the bubbles remaining on the plated surface of the substrate increases. In this way, when air bubbles remain on the plated surface of the substrate, the plating quality of the substrate may be degraded by the retained air bubbles.
本發明係鑑於上述情況而成者,目的之一為提供一種技術,其可抑制基板之鍍覆品質因滯留於基板之被鍍覆面的氣泡而惡化。 〔解決問題之手段〕 The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a technique capable of suppressing deterioration of the plating quality of the substrate due to air bubbles remaining on the plating surface of the substrate. [Means of Solving Problems]
(樣態1) 為達成上述目的,本發明一個樣態之鍍覆裝置具備:鍍覆槽,其係貯存鍍覆液,並且於內部配置有陽極;基板固持器,其係配置於比前述陽極還上方,保持作為陰極之基板讓前述基板之被鍍覆面朝向下方,並且具有比前述基板之前述被鍍覆面的外周緣還突出於下方之環;旋轉機構,其係使前述基板固持器旋轉;及升降機構,其係使前述基板固持器升降;於前述環之下面的一部分配置有朝向下方側而突出之至少1個突起。 (pattern 1) In order to achieve the above object, a plating apparatus according to an aspect of the present invention includes: a plating tank that stores a plating solution and has an anode disposed inside; and a substrate holder that is disposed above the anode and holds a The substrate of the cathode has the plated surface of the substrate facing downward, and has a ring that protrudes below the outer periphery of the plated surface of the substrate; a rotation mechanism, which rotates the substrate holder; and a lift mechanism, which The substrate holder is moved up and down, and at least one protrusion protruding downward is arranged on a part of the lower surface of the ring.
採用該樣態時,在基板之被鍍覆面浸漬於鍍覆液的狀態下以基板固持器旋轉的方式,可藉由突起將鍍覆液推出至基板固持器之旋轉方向,藉此,可產生從基板之被鍍覆面的中央側朝向外周側之強鍍覆液流(液流)。藉由該強液流,可使存在於基板之被鍍覆面的氣泡越過環而排出至環的外側。亦即,可從被鍍覆面去除存在於基板之被鍍覆面的氣泡。藉此,可抑制基板的鍍覆品質因滯留於基板被鍍覆面之氣泡而惡化。In this state, the substrate holder is rotated in a state where the plated surface of the substrate is immersed in the plating solution, and the plating solution can be pushed out by the protrusions in the direction of rotation of the substrate holder. Strong plating liquid flow (liquid flow) from the center side of the plated surface of the substrate toward the outer peripheral side. By the strong liquid flow, the air bubbles present on the plated surface of the substrate can pass over the ring and be discharged to the outside of the ring. That is, air bubbles existing on the plated surface of the substrate can be removed from the plated surface. Thereby, it can suppress that the plating quality of a board|substrate is deteriorated by the air bubbles which remain|survived on the surface to be plated of the board|substrate.
(樣態2)
上述樣態1中,前述突起亦可藉由具有在前述環之下面從內周側朝向外周側而延伸之軸線的板構件所構成。
(pattern 2)
In the above-mentioned
(樣態3) 上述樣態2中,亦可為前述突起之軸線與前述環之內周面的切線形成之角度,且在前述基板固持器在一個方向旋轉時的前述基板固持器之旋轉方向上,從前述軸線之側朝向前述切線之側計測時的前述角度為0°以上,且小於20°時,前述旋轉機構使前述基板固持器以100rpm以上旋轉,前述角度為20°以上,且小於60°時,前述旋轉機構使前述基板固持器以40rpm以上旋轉,前述角度為60°以上,120°以下時,前述旋轉機構使前述基板固持器以25rpm以上旋轉,前述角度為比120°大,且為160°以下時,前述旋轉機構使前述基板固持器以25rpm以上旋轉,前述角度比160°大,且為180°以下時,前述旋轉機構使前述基板固持器旋轉以100rpm以上旋轉。 (pattern 3) In the above-mentioned aspect 2, the angle formed by the axis of the protrusion and the tangent of the inner peripheral surface of the ring may be formed, and in the rotation direction of the substrate holder when the substrate holder rotates in one direction, from the axis When the angle measured from the side facing the tangent line is 0° or more and less than 20°, the rotation mechanism rotates the substrate holder at 100 rpm or more, and when the angle is 20° or more and less than 60°, the above When the rotation mechanism rotates the substrate holder at 40 rpm or more and the angle is 60° or more and 120° or less, the rotation mechanism rotates the substrate holder at 25 rpm or more, and the angle is greater than 120° and 160° or less When the rotation mechanism rotates the substrate holder at 25 rpm or more, and the angle is larger than 160° and 180° or less, the rotation mechanism rotates the substrate holder at 100 rpm or more.
(樣態4) 上述樣態3中,前述角度亦可係60°以上,160°以下。 (pattern 4) In the above-mentioned aspect 3, the aforementioned angle may be 60° or more and 160° or less.
(樣態5) 上述樣態4中,前述旋轉機構亦可使前述基板固持器以30rpm以上旋轉。 (pattern 5) In the said aspect 4, the said rotation mechanism may rotate the said board|substrate holder at 30 rpm or more.
(樣態6)
上述樣態1~5之任何1個樣態中,前述突起數量亦可係複數個。採用此樣態時,與突起數量為1個時比較,可有效去除存在於基板之被鍍覆面的氣泡。
(pattern 6)
In any one of the above-mentioned
(樣態7) 上述樣態3中,前述突起之數量係複數個,複數個前述突起包含:第一突起,其係在前述基板固持器正轉時在前述基板固持器之旋轉方向上,從前述軸線之側朝向前述切線之側計測時的前述角度係60°以上,160°以下;及第二突起,其係在前述基板固持器反轉時在前述基板固持器之旋轉方向上,從前述軸線之側朝向前述切線之側計測時的前述角度係60°以上,160°以下;前述旋轉機構在對前述基板之前述被鍍覆面實施鍍覆處理之鍍覆處理時,亦可構成為使前述基板固持器正轉及反轉分別至少進行1次。 (pattern 7) In the above-mentioned aspect 3, the number of the protrusions is plural, and the plurality of the protrusions include: a first protrusion that faces from the side of the axis in the rotation direction of the substrate holder when the substrate holder is rotated forwardly The angle measured on the side of the tangent line is 60° or more and 160° or less; and the second protrusion is from the side of the axis toward the above in the rotation direction of the substrate holder when the substrate holder is reversed. The angle measured on the side of the tangent is 60° or more and 160° or less; the rotation mechanism can also be configured to rotate the substrate holder forward when performing the plating process of the plating process on the plated surface of the substrate. and reversal are performed at least once respectively.
採用此樣態時,於鍍覆處理時,當基板固持器旋轉時(正轉及反轉時),第一突起及第二突起中之任何一方,「突起之軸線與環之內周面的切線形成之角度,且係在基板固持器之旋轉方向上從軸線之側朝向切線之側計測時的角度」成為60°以上,160°以下。In this state, during the plating process, when the substrate holder rotates (forward rotation and reverse rotation), any one of the first protrusion and the second protrusion will have a "distance between the axis of the protrusion and the inner peripheral surface of the ring". The angle formed by the tangent, and the angle measured from the side of the axis toward the side of the tangent in the rotation direction of the substrate holder" shall be 60° or more and 160° or less.
(樣態8)
上述樣態1~7中任何1個樣態,亦可進一步具備:至少一個供給口,其係設於前述鍍覆槽之外周壁,並在前述鍍覆槽中供給鍍覆液;及至少一個排出口,其係設於前述鍍覆槽的前述外周壁而與前述供給口相對,且吸入前述鍍覆槽之鍍覆液,並從前述鍍覆槽排出;前述供給口及前述排出口構成為以前述排出口吸入從前述供給口所供給之鍍覆液的方式,而在前述鍍覆槽中之前述基板的前述被鍍覆面下方形成沿著前述被鍍覆面之鍍覆液的剪切流。
(pattern 8)
Any one of the above-mentioned
採用該樣態時,當基板之被鍍覆面浸漬於鍍覆液時,可使在基板之被鍍覆面的中央產生之氣泡藉由剪切流而容易朝向被鍍覆面的外周面移動。藉此,可藉由突起有效使移動至該外周側之氣泡排出至環的外側。In this aspect, when the plated surface of the substrate is immersed in the plating solution, the bubbles generated in the center of the plated surface of the substrate can be easily moved toward the outer peripheral surface of the plated surface by the shear flow. Thereby, the bubble which moved to this outer peripheral side can be discharged|emitted to the outer side of a ring efficiently by a protrusion.
(樣態9)
上述樣態1~7中任何1個樣態,亦可進一步具備流動機構,其係在前述基板之前述被鍍覆面浸漬於鍍覆液之前,使前述鍍覆槽之鍍覆液流動,讓前述鍍覆槽中央之鍍覆液的液面向上方隆起,前述升降機構在前述鍍覆槽中央之鍍覆液的液面向上方隆起之狀態下,以使前述基板固持器下降的方式,而使前述基板之前述被鍍覆面的中央比前述被鍍覆面之外周緣還先接觸鍍覆液。
(pattern 9)
Any one of the above-mentioned
採用該樣態時,在基板之被鍍覆面與鍍覆液接觸時,以使被鍍覆面之中央先接觸液體的方式,存在於被鍍覆面中央之氣泡逃往被鍍覆面的外周側,同時可使被鍍覆面浸漬於鍍覆液。結果,可藉由突起使移動至該外周側之氣泡有效排出至環的外側。In this state, when the surface to be plated of the substrate is in contact with the plating solution, the center of the surface to be plated is brought into contact with the liquid first, and the air bubbles present in the center of the surface to be plated escape to the outer peripheral side of the surface to be plated, and at the same time The surface to be plated can be immersed in the plating solution. As a result, the air bubbles moved to the outer peripheral side can be efficiently discharged to the outside of the ring by the protrusion.
(樣態10)
上述樣態1~7之任何1個樣態中,前述鍍覆裝置亦可構成為讓前述基板之前述被鍍覆面在對前述鍍覆槽之鍍覆液的水平液面傾斜之狀態下接觸液體。
(pattern 10)
In any one of the above-mentioned
採用該樣態時,在基板之被鍍覆面與鍍覆液接觸時,可使存在於被鍍覆面之氣泡利用浮力沿著被鍍覆面移動至斜上方,同時使被鍍覆面浸漬於鍍覆液。藉此,可使氣泡有效移動至被鍍覆面之外周側。結果,可藉由突起使移動至該外周側之氣泡有效排出至環的外側。In this state, when the plated surface of the substrate is in contact with the plating solution, the air bubbles present on the plated surface can be moved obliquely upward along the plated surface by buoyancy, and the plated surface can be immersed in the plating solution at the same time. . Thereby, the air bubbles can be efficiently moved to the outer peripheral side of the surface to be plated. As a result, the air bubbles moved to the outer peripheral side can be efficiently discharged to the outside of the ring by the protrusion.
(樣態11)
上述樣態1~7中任何1個樣態,亦可進一步具備槳葉,其係配置於比前述鍍覆槽中之前述陽極還上方,且比前述基板還下方,並以在水平方向往返移動的方式來攪拌前述鍍覆槽之鍍覆液。
(pattern 11)
Any one of the above-mentioned
採用該樣態時,以槳葉攪拌鍍覆液的方式,可使存在於基板之被鍍覆面的氣泡有效移動至被鍍覆面之外周側。藉此,可藉由突起使移動至該外周側之氣泡有效排出至環的外側。In this aspect, by stirring the plating solution with the paddle, the air bubbles present on the plated surface of the substrate can be efficiently moved to the outer peripheral side of the plated surface. Thereby, the air bubbles moved to the outer peripheral side can be efficiently discharged to the outside of the ring by the protrusion.
(樣態12) 為了達成上述目的,本發明一個樣態的鍍覆裝置之氣泡去除方法,該鍍覆裝置具備:鍍覆槽,其係貯存鍍覆液,並且在內部配置有陽極;及基板固持器,其係配置於比前述陽極還上方,保持作為陰極之基板讓前述基板之被鍍覆面朝向下方,並且具有比前述基板之前述被鍍覆面的外周緣還突出於下方之環;在前述環之下面的一部分配置有朝向下方側而突出之至少1個突起,前述氣泡去除方法包含在使前述基板之前述被鍍覆面浸漬於鍍覆液的狀態下使前述基板固持器旋轉。 (pattern 12) In order to achieve the above object, a method for removing bubbles of a plating apparatus according to an aspect of the present invention includes: a plating tank that stores a plating solution and has an anode disposed inside; and a substrate holder that is Arranged above the anode, holding the substrate as a cathode with the plated surface of the substrate facing downward, and having a ring that protrudes below the outer periphery of the plated surface of the substrate; a part below the ring At least one protrusion protruding downward is arranged, and the bubble removing method includes rotating the substrate holder in a state in which the plated surface of the substrate is immersed in a plating solution.
採用該樣態時,可抑制基板之鍍覆品質因滯留於基板之被鍍覆面的氣泡而惡化。In this aspect, deterioration of the plating quality of the substrate due to air bubbles remaining on the plating surface of the substrate can be suppressed.
(實施形態) 以下,參照圖式說明本發明之實施形態。另外,以下之實施形態及後述之實施形態的變化例中,係就相同或對應之構成註記相同符號,並適切省略說明。此外,圖式係為了容易理解構成元件之特徵而示意性圖示,並不限於各構成元件之尺寸比率等與實際者相同。此外,一些圖式中,作為參考用而圖示有X-Y-Z直角座標。該直角座標中,Z方向相當於上方,-Z方向相當於下方(重力作用之方向)。 (implementation form) Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the following embodiment and the modification of the embodiment mentioned later, the same code|symbol is attached|subjected to the same or corresponding structure, and description is abbreviate|omitted suitably. In addition, the drawings are schematic diagrams for easy understanding of the features of the constituent elements, and are not limited to the fact that the dimensional ratios and the like of the constituent elements are the same as the actual ones. In addition, in some drawings, XY-Z rectangular coordinates are shown for reference. In this rectangular coordinate, the Z direction corresponds to the upper direction, and the −Z direction corresponds to the downward direction (the direction of the action of gravity).
圖1係顯示本實施形態之鍍覆裝置的整體構成立體圖。圖2係顯示本實施形態之鍍覆裝置的整體構成俯視圖。如圖1、2所示,鍍覆裝置1000具備:裝載埠100、搬送機器人110、對準器120、預濕模組200、預浸模組300、鍍覆模組400、清洗模組500、自旋沖洗乾燥器600、搬送裝置700、及控制模組800。FIG. 1 is a perspective view showing the overall configuration of the coating apparatus of the present embodiment. FIG. 2 is a plan view showing the overall configuration of the coating apparatus of the present embodiment. As shown in FIGS. 1 and 2 , the
裝載埠100係用於搬入收納於鍍覆裝置1000中無圖示之FOUP等匣盒的基板,或是從鍍覆裝置1000搬出基板至匣盒的模組。本實施形態中,係在水平方向並列配置4台裝載埠100,但裝載埠100之數量及配置不拘。搬送機器人110係用於搬送基板之機器人,且構成來在裝載埠100、對準器120、及搬送裝置700之間交接基板。搬送機器人110及搬送裝置700在搬送機器人110與搬送裝置700之間交接基板時,可經由暫置台(無圖示)進行基板的交接。The
對準器120係用於將基板之定向平面凹槽等的位置對準指定方向之模組。本實施形態中,係在水平方向並列配置2台對準器120,但對準器120之數量及配置不拘。預濕模組200以將鍍覆處理前之基板的被鍍覆面以純水或脫氣水等處理液濕潤的方式,將形成於基板表面之圖案內部的空氣替換成處理液。預濕模組200係構成來實施預濕處理,其在鍍覆時以將圖案內部之處理液替換成鍍覆液的方式使鍍覆液易於供給至圖案內部。本實施形態係中,在上下方向並列配置2台預濕模組200,但預濕模組200之數量及配置不拘。The
預浸模組300例如係構成來實施預浸處理,其以硫酸或鹽酸等處理液蝕刻除去形成於鍍覆處理前之基板的被鍍覆面之種層表面等上所存在之電阻大的氧化膜,將鍍覆基底表面清洗或活化。本實施形態中係在上下方向並列配置2台預浸模組300,但預浸模組300之數量及配置不拘。鍍覆模組400對基板實施鍍覆處理。本實施形態中有2組在上下方向並列配置3台且在水平方向並列配置4台之12台的鍍覆模組400,而設置合計24台之鍍覆模組400,但鍍覆模組400之數量及配置不拘。For example, the
清洗模組500係構成來對基板實施清洗處理,用來除去殘留於鍍覆處理後之基板的鍍覆液等。本實施形態中係在上下方向並列配置2台清洗模組500,但清洗模組500之數量及配置不拘。自旋沖洗乾燥器600係用於使清洗處理後之基板高速旋轉而乾燥的模組。本實施形態中係在上下方向並列配置2台自旋沖洗乾燥器,但自旋沖洗乾燥器之數量及配置不拘。搬送裝置700係用於在鍍覆裝置1000中之複數個模組間搬送基板的裝置。控制模組800係構成來控制鍍覆裝置1000之複數個模組,例如可由一般電腦或專用電腦而構成,其具備在其與作業人員之間的輸入輸出介面。The
以下說明鍍覆裝置1000之一連串鍍覆處理的一例。首先,將收納於匣盒之基板搬入裝載埠100。繼續,搬送機器人110從裝載埠100之匣盒取出基板,並將基板搬送至對準器120。對準器120將基板之定向平面或凹槽等的位置對準指定方向。搬送機器人110將在對準器120對準方向之基板往搬送裝置700送交。An example of a series of plating processes in the
搬送裝置700將從搬送機器人110接收之基板往預濕模組200搬送。預濕模組200對基板實施預濕處理。搬送裝置700將經實施預濕處理之基板往預浸模組300搬送。預浸模組300對基板實施預浸處理。搬送裝置700將經實施預浸處理之基板往鍍覆模組400搬送。鍍覆模組400對基板實施鍍覆處理。The
搬送裝置700將經實施鍍覆處理後之基板往清洗模組500搬送。清洗模組500對基板實施清洗處理。搬送裝置700將經實施清洗處理之基板往自旋沖洗乾燥器600搬送。自旋沖洗乾燥器600對基板實施乾燥處理。搬送裝置700將經實施乾燥處理後之基板往搬送機器人110送交。搬送機器人110將從搬送裝置700所接收之基板往裝載埠100的匣盒搬送。最後,從裝載埠100搬出收納了基板之匣盒。The
另外,圖1及圖2所說明之鍍覆裝置1000的構成不過是一例,鍍覆裝置1000之構成並非限定於圖1及圖2之構成者。In addition, the structure of the
繼續,就鍍覆模組400作說明。另外,由於本實施形態之鍍覆裝置1000具有的複數個鍍覆模組400具有同樣之構成,因此,就1個鍍覆模組400作說明。Continuing, the
圖3係顯示本實施形態之鍍覆裝置1000中的鍍覆模組400之構成示意圖。本實施形態之鍍覆裝置1000係杯式的鍍覆裝置。本實施形態之鍍覆裝置1000的鍍覆模組400具備:鍍覆槽10、溢流槽20、基板固持器30、旋轉機構40、傾斜機構45、及升降機構50。另外,圖3中,一部分構件(鍍覆槽10、溢流槽20、基板固持器30等)示意性圖示其剖面。FIG. 3 is a schematic diagram showing the structure of the
本實施形態之鍍覆槽10藉由上方具有開口之有底的容器而構成。具體而言,鍍覆槽10具有:底壁10a;及從該底壁10a之外周緣延伸至上方的外周壁10b;該外周壁10b之上部開口。另外,鍍覆槽10之外周壁10b的形狀並非特別限定者,本實施形態之外周壁10b的一例為具有圓筒形狀。在鍍覆槽10之內部貯存有鍍覆液Ps。The
作為鍍覆液Ps只要是含有構成鍍覆皮膜之金屬元素的離子之溶液即可,其具體例並非特別限定者。本實施形態中,鍍覆處理之一例為使用銅鍍覆處理,鍍覆液Ps之一例為使用硫酸銅溶液。此外,本實施形態中,鍍覆液Ps中含有指定之添加劑。但是,並非限定於該構成者,鍍覆液Ps亦可為不含添加劑之構成。The plating solution Ps should just be a solution containing ions of metal elements constituting the plating film, and specific examples thereof are not particularly limited. In the present embodiment, an example of the plating treatment is the use of copper plating treatment, and an example of the plating solution Ps is the use of a copper sulfate solution. In addition, in the present embodiment, a predetermined additive is contained in the plating solution Ps. However, it is not limited to this structure, and the structure which does not contain an additive may be sufficient as the plating solution Ps.
鍍覆槽10中設有用於在鍍覆槽10中供給鍍覆液Ps之鍍覆液供給口(無圖示)。本實施形態之鍍覆液供給口配置於鍍覆槽10之底壁10a,而朝向上方供給鍍覆液Ps。另外,圖3所示之「F1」顯示從鍍覆液供給口供給之鍍覆液Ps的流動方向之一例。The
在鍍覆槽10之內部配置有陽極11。具體而言,本實施形態之陽極11的一例為配置於鍍覆槽10之底壁10a。陽極11之具體種類並非特別限定者,亦可係非溶解陽極,亦可係溶解陽極。本實施形態中,作為陽極11的一例為使用非溶解陽極。該非溶解陽極之具體種類並非特別限定者,可使用鉑及氧化銥等。另外,基板Wf及陽極11與通電裝置(無圖示)電性連接。該通電裝置係在執行鍍覆處理時,用於在基板Wf與陽極11之間通電的裝置。An
鍍覆槽10之內部中,比陽極11還上方處配置有電阻體12。具體而言,電阻體12藉由具有複數個孔(細孔)之多孔質的板構件而構成。電阻體12係為了謀求形成於陽極11與基板Wf之間的電場均勻化而設的構件。因此,以在鍍覆槽10中配置電阻體12的方式,可輕易謀求形成於基板Wf之鍍覆皮膜(鍍覆層)的膜厚均勻化。另外,電阻體12在本實施形態中並非必要的構件,鍍覆裝置1000亦可為不具電阻體12之構成。Inside the
溢流槽20配置於鍍覆槽10外側,並藉由有底之容器構成。溢流槽20係用於暫時貯存超過鍍覆槽10之外周壁10b上端的鍍覆液Ps(亦即,從鍍覆槽10所溢流之鍍覆液Ps)而設。暫時貯存於溢流槽20之鍍覆液Ps從溢流槽20用之排出口(無圖示)排出後,暫時貯存於溢流槽20用之貯存槽(無圖示)。貯存於該貯存槽之鍍覆液Ps之後藉由泵浦(無圖示)壓送,而從鍍覆液供給口再度循環至鍍覆槽10。The
基板固持器30配置於比陽極11還上方(本實施形態中,係比電阻體12更上方)。基板固持器30保持作為陰極之基板Wf讓基板Wf之被鍍覆面Wfa朝向下方。The
參照圖3特別是A1部分的放大圖,本實施形態之基板固持器30具有比基板Wf之被鍍覆面Wfa的外周緣還突出於下方而設之環31(環狀的構件)(該環31之仰視參照後述的圖5)。另外,在圖3之A1部分放大圖中圖示的「h1」表示環31之高度(突出高度)。此外,本實施形態中,環31之下面31a實質係平面(在水平方向延伸之平面),但並非限定於該構成者。例如,環31之下面31a亦可對水平方向傾斜。Referring to FIG. 3 , particularly an enlarged view of part A1, the
基板固持器30(亦包含環31)之材質並非特別限定者,但作為本實施形態之一例係使用聚氯乙烯(PVC)。另外,亦可在基板固持器30與基板Wf之間配置有用於抑制鍍覆液Ps侵入基板固持器30與基板Wf之間的間隙之密封構件(無圖示)。亦即,此時,基板固持器30係經由密封構件而保持基板Wf。作為該密封構件之材質可使用氟橡膠(FKM)等。The material of the substrate holder 30 (including the ring 31 ) is not particularly limited, but polyvinyl chloride (PVC) is used as an example of the present embodiment. In addition, a sealing member (not shown) for preventing the plating solution Ps from entering the gap between the
基板固持器30連接於旋轉機構40。旋轉機構40係用於使基板固持器30旋轉之機構。具體而言,本實施形態之旋轉機構40係構成來使基板固持器30在正轉方向(R1)旋轉。另外,本實施形態中,基板固持器30之旋轉方向中,正轉方向(R1)之一例為從上方辨識基板固持器30之俯視(或平面視)時係順時鐘方向。旋轉機構40之具體種類並非特別限定者,例如可使用習知之旋轉馬達等。The
傾斜機構45係用於使基板固持器30對水平面傾斜之機構。具體而言,本實施形態之傾斜機構45係以使旋轉機構40傾斜的方式使基板固持器30傾斜。此種傾斜機構45例如可使用活塞汽缸等習知之傾斜機構。升降機構50藉由在上下方向延伸之支軸51而支撐。升降機構50係用於使基板固持器30、旋轉機構40、及傾斜機構45在上下方向升降之機構。作為升降機構50,可使用直動式之致動器等習知的升降機構。The
鍍覆模組400之動作由控制模組800控制。該控制模組800備有微電腦,該微電腦具備:作為處理器之CPU(中央處理單元)、及作為非暫態記憶媒體之記憶裝置等。控制模組800依據記憶於記憶裝置之程式的指令,以作為處理器之CPU的作動,來控制鍍覆模組400之被控制部(例如旋轉機構40、傾斜機構45、升降機構50等)的動作。The action of the
圖4係顯示基板Wf浸漬於鍍覆液Ps之情形的示意剖面圖。在基板Wf之被鍍覆面Wfa上實施鍍覆處理「鍍覆處理時」中,旋轉機構40使基板固持器30旋轉,並且升降機構50使基板固持器30移動至下方,而使基板Wf浸漬於鍍覆槽10之鍍覆液Ps中。另外,基板固持器30亦可在基板Wf之被鍍覆面Wfa與鍍覆液Ps接觸前旋轉,或是,亦可在與鍍覆液Ps接觸後旋轉。其次,藉由通電裝置而在陽極11與基板Wf之間通電。藉此,在基板Wf之被鍍覆面Wfa上形成鍍覆皮膜。另外,在鍍覆處理時,傾斜機構45亦可依需要使基板固持器30傾斜。FIG. 4 is a schematic cross-sectional view showing a state in which the substrate Wf is immersed in the plating solution Ps. During the plating process "during the plating process" performed on the plated surface Wfa of the substrate Wf, the
再者,如本實施形態之杯式的鍍覆裝置1000中,因某些原因會在鍍覆槽10之鍍覆液Ps中產生氣泡(Bu:該符號例示於後述之圖5中)。具體而言,如本實施形態,作為陽極11使用非溶解陽極時,在執行鍍覆處理時(通電時),鍍覆液Ps中依據以下之反應公式而產生氧(O
2)。此時,該產生之氧會成為氣泡。
Furthermore, in the cup-
2H 2O→O 2+4H ++4e - 2H 2 O→O 2 +4H + +4e -
此外,若使用溶解陽極作為陽極11時,雖然不會發生如上述之反應公式,但例如最初在鍍覆槽10中導入鍍覆液Ps時,空氣會有與鍍覆液Ps一起流入鍍覆槽10之虞。因此,即使使用溶解陽極作為陽極11時,仍有在鍍覆槽10之鍍覆液Ps中產生氣泡的可能性。In addition, if a dissolved anode is used as the
如上述,鍍覆槽10之鍍覆液Ps中產生氣泡時,若該氣泡滯留於基板Wf之被鍍覆面Wfa時,該滯留之氣泡會有阻斷電場之虞。此時,會有導致基板Wf之鍍覆品質惡化之虞。因此,本實施形態係為了處理該問題而使用以下說明之技術。As described above, when air bubbles are generated in the plating solution Ps of the
圖5係顯示從下方辨識基板固持器30之情形的示意底視圖。參照圖5、及前述圖3特別是A1部分放大圖,在本實施形態之環31的下面31a之一部分配置有朝向下方側而突出之至少一個突起35。突起35之數量亦可係1個,亦可係複數個,但一例為本實施形態之突起35的數量係一個。FIG. 5 is a schematic bottom view showing a state in which the
突起35在將基板Wf之被鍍覆面Wfa浸漬於鍍覆液Ps的狀態下,旋轉機構40使基板固持器30旋轉時,係構成來讓突起35將鍍覆液Ps於基板固持器30之旋轉方向推出。The
具體而言,如圖5所示,本實施形態之突起35藉由具有從環31之下面31a的內周側朝向外周側延伸之軸線AL1的板構件而構成。採用該構成時,可藉由突起35有效將鍍覆液Ps於基板固持器30之旋轉方向推出。Specifically, as shown in FIG. 5 , the
另外,突起35之具體形狀並非特別限定者,本實施形態之突起35的一例在仰視下,具有將軸線AL1之方向作為長度方向的長方形之形狀。In addition, the specific shape of the
採用如以上說明之本實施形態時,在基板Wf之被鍍覆面Wfa浸漬於鍍覆液Ps的狀態下以基板固持器30旋轉的方式,可藉由突起35將鍍覆液Ps於基板固持器30之旋轉方向推出,藉此,可產生從基板Wf之被鍍覆面Wfa的中央側朝向外周側之強鍍覆液Ps的流動(液流)。藉由該強液流,可使存在於基板Wf之被鍍覆面Wfa的氣泡(Bu)越過環31而排出至環31的外側(另外,圖5之「F2」係顯示氣泡流動方向之一例的線)。亦即,可從被鍍覆面Wfa去除存在於基板Wf之被鍍覆面Wfa的氣泡。藉此,可抑制基板Wf之鍍覆品質因滯留於基板Wf之被鍍覆面Wfa的氣泡而惡化。According to the present embodiment as described above, in a state where the plating surface Wfa of the substrate Wf is immersed in the plating liquid Ps, the
(實施例)
就上述之鍍覆裝置1000,以實驗確認使「基板固持器30之旋轉速度」、及「突起35之軸線AL1與環31的內周面31b之切線TL形成的角度θ」變化時,從基板Wf之被鍍覆面Wfa去除氣泡的程度。另外,該軸線AL1與切線TL形成之「角度θ」,具體而言,係「基板固持器30在一個方向旋轉時(本實施形態中係正轉時)在基板固持器30之旋轉方向上從軸線AL1之側朝向切線TL之側計測時的角度θ」。就該實驗結果說明如下。
(Example)
In the above-mentioned
在實驗使用之鍍覆裝置1000係圖3至圖5中例示的鍍覆裝置1000,具體而言,係使用環31之高度(h1)為2.5mm,突起35之高度(h2)為5mm,環31之內周面31b與突起35的水平方向距離(d)為0.5mm者。使保持於基板固持器30之基板Wf浸漬於鍍覆槽10的鍍覆液Ps中,並使0.1ml之氣泡滯留於基板Wf的被鍍覆面Wfa,其次,藉由旋轉機構40使基板固持器30以表1中記載之旋轉速度(每分鐘之旋轉數:rpm)於正轉方向旋轉。以目視量測此時從基板Wf之被鍍覆面Wfa去除氣泡的程度。The
將該量測結果顯示於表1。另外,表1所示之基板固持器30的旋轉速度係在從低速(10rpm)至高速(100rpm)的範圍,但這是假設鍍覆裝置1000在正常使用時的旋轉速度範圍。此外,基板固持器30之旋轉速度比100rpm大時,獲得與旋轉速度為100rpm時同樣的結果。因此,省略旋轉速度比100rpm大時之量測結果的提示。The measurement results are shown in Table 1. In addition, the rotation speed of the
〔表1〕
表1中,按照D、C、B、A之順序從基板Wf之被鍍覆面Wfa去除氣泡的程度提高。換言之,從基板Wf之被鍍覆面Wfa去除氣泡需要的時間按照D、C、B、A之順序縮短。另外,「A」所謂氣泡去除程度係指比環31之內周面31b還存在於內側之氣泡來到突起35的位置時,可確實使氣泡排出至環31外側。「B」係使存在於環31內側之氣泡排出至環31外側需要的時間比「A」長,「C」係比「B」花費該時間,「D」係比「C」花費該時間。In Table 1, the degree of removal of air bubbles from the plated surface Wfa of the substrate Wf increased in the order of D, C, B, and A. In other words, the time required to remove air bubbles from the plated surface Wfa of the substrate Wf is shortened in the order of D, C, B, and A. In addition, "A" refers to the degree of removal of air bubbles, which means that air bubbles existing inside the inner
從表1瞭解,即便是在角度θ為0°以上,180°以下範圍內的任何場合時,於鍍覆裝置1000在正常使用時所假定之基板固持器30的旋轉速度的範圍內(從低速至高速的範圍內),至少會獲得為「D」以上的評價。亦即,瞭解在基板固持器30之環31的下面31a設置突起35,以使該基板固持器30旋轉的方式,可從被鍍覆面Wfa去除存在於基板Wf之被鍍覆面Wfa的氣泡。As can be seen from Table 1, even when the angle θ is in the range of 0° or more and 180° or less, within the range of the rotation speed of the substrate holder 30 (from low within the range of high speed), at least a "D" rating or higher will be obtained. That is, it is understood that the
但是,比起「D」之評價,「C」以上之評價者,因氣泡去除效果高而為宜。獲得該「C」以上評價之「角度θ及旋轉速度」的組合如下。However, compared with the evaluation of "D", the evaluation of "C" or higher is preferable because the bubble removal effect is high. The combination of "angle θ and rotational speed" that obtained the evaluation of "C" or higher is as follows.
亦即,角度θ為0°以上,且小於20°時,當基板固持器30以100rpm以上旋轉,因可獲得「C」以上之評價而為宜。同樣地,角度θ為20°以上,且小於60°時,基板固持器30以40rpm以上旋轉為宜,角度θ為60°以上,120°以下時,基板固持器30以25rpm以上旋轉為宜,角度θ為比120°大,且在160°以下時,基板固持器30以25rpm以上旋轉為宜,角度θ為比160°大,且為180°以下時,基板固持器30以100rpm以上旋轉為宜。That is, when the angle θ is 0° or more and less than 20°, when the
此外,從表1瞭解角度θ為60°以上,160°以下之範圍者,與角度θ小於60°時、及角度θ比160°大時比較,獲得「C」以上評價之基板固持器30的旋轉速度範圍擴大。亦即,角度θ為60°以上,160°以下之範圍時,與角度θ小於60°時、及角度θ比160°大時比較,可在基板固持器30之旋轉速度的廣範圍獲得高的氣泡去除效果。In addition, it is understood from Table 1 that when the angle θ is in the range of 60° or more and 160° or less, compared with the case where the angle θ is less than 60° and when the angle θ is greater than 160°, the
此外,從表1瞭解角度θ在60°以上,160°以下之範圍內,角度θ比120°大,且在160°以下者,與角度θ為60°以上,120°以下時比較,獲得「A」評價之基板固持器30的旋轉速度範圍擴大。亦即,角度θ比120°大,且為160°以下時,在基板固持器30之旋轉速度的廣範圍可獲得最高氣泡去除效果。In addition, it is understood from Table 1 that when the angle θ is in the range of 60° or more and 160° or less, and the angle θ is larger than 120° and 160° or less, compared with the case where the angle θ is 60° or more and 120° or less, " The rotation speed range of the
另外,前述圖5之突起35的角度θ係在60°以上,160°以下之範圍,具體而言,係在比120°大,且在160°以下之範圍。In addition, the angle θ of the
此外,從表1瞭解,角度θ為60°以上,160°以下之範圍時,基板固持器30之旋轉速度為30rpm以上者,與小於30rpm時比較,氣泡之去除效果高。亦即,角度θ係60°以上,160°以下之範圍時,基板固持器30之旋轉速度以30rpm以上為宜。In addition, it is understood from Table 1 that when the angle θ is in the range of 60° or more and 160° or less, when the rotation speed of the
另外,本實施形態的鍍覆裝置之氣泡去除方法係藉由上述之鍍覆裝置1000來實現。因此,為了省略重複之說明,而省略該氣泡去除方法之詳細說明。In addition, the bubble removal method of the plating apparatus of this embodiment is implemented by the above-mentioned
(實施形態之變化例1)
上述實施形態中,突起35仰視時具有長方形之形狀,但突起35之形狀並非限定於此者。圖6(A)係實施形態之變化例1的鍍覆裝置1000A之基板固持器30A的突起35A附近部分(A2部分)之示意底視圖。本變化例之突起35A仰視時具有三角形之形狀。具體而言,本變化例之突起35A在軸線AL1方向且在環31之內周側的方向具有頂點,並具有隨著從該頂點朝向環31之外周側的方向而寬度變大之三角形形狀。本變化例中亦可達到與前述實施形態同樣之作用效果。
(
(實施形態之變化例2)
圖6(B)係實施形態之變化例2的鍍覆裝置1000B之基板固持器30B的突起35B附近部分(A2部分)之示意底視圖。本變化例之突起35B仰視時具有菱形(或平行四邊形)之形狀。具體而言,本變化例之突起35B具有在軸線AL1方向之長度比垂直於軸線AL1之方向的長度長之菱形(或平行四邊形)的形狀。本變化例中亦可達到與前述實施形態同樣之作用效果。
(Variation 2 of the embodiment)
6(B) is a schematic bottom view of a portion (A2 portion) near the
另外,圖6(A)及圖6(B)不過是突起35之其他形狀的一例,突起35之其他形狀並非限定於此等者。6(A) and FIG. 6(B) are merely examples of other shapes of the
(實施形態之變化例3)
圖7係實施形態之變化例3的鍍覆裝置1000C之基板固持器30C的示意底視圖。另外,圖7示意性圖示與前述圖5同樣之部位。本變化例之基板固持器30C在具有複數個突起35這點上與前述圖5的基板固持器30不同。
(Variation 3 of the embodiment)
FIG. 7 is a schematic bottom view of a
具體而言,本變化例之複數個突起35在環31之下面31a等間隔配置有4個。更具體而言,複數個突起35在環31之下面31a的周方向係以45°之間隔排列。此外,本變化例中,各個突起35之角度θ與圖5的情況同樣地,在60°以上,160°以下之範圍,具體而言,為比120°大,且為160°以下之範圍。Specifically, the plurality of
另外,複數個突起35之數量並非限定於如上述的4個,亦可比4個少,亦可比其多。此外,各個突起35之形狀並非限定於如圖7例示之長方形者,亦可係長方形以外之形狀(例如,變化例1及變化例2所例示之形狀)。In addition, the number of the plurality of
採用本變化例時,由於突起35之數量係複數個,因此與突起35之數量係1個時比較,可使存在於基板Wf之被鍍覆面Wfa的氣泡與突起35之位置的對準頻率增加。藉此,可使存在於被鍍覆面Wfa之氣泡有效地排出至環31的外側,而有效地除去。According to this modification, since the number of the
(實施形態之變化例4)
圖8係實施形態之變化例4的鍍覆裝置1000D之基板固持器30D的示意底視圖。本變化例之基板固持器30D在具有第一突起36、及第二突起37作為複數個突起這點上與圖5的基板固持器30不同。
(Variation 4 of the embodiment)
FIG. 8 is a schematic bottom view of the
第一突起36具有與前述圖5之突起35同樣的構成。亦即,第一突起36係構成為讓「軸線AL1與切線TL形成之角,且係在基板固持器30D正轉時在基板固持器30D之旋轉方向上,從軸線AL1之側朝向切線TL之側計測時的角度θ」為60°以上,160°以下之突起。具體而言,本變化例之第一突起36的「角度θ」在比120°大,且為160°以下之範圍。The
另外,第二突起37係構成為讓以「軸線AL1與切線TL形成之角,且係在基板固持器30D反轉時基板固持器30D之旋轉方向上,從軸線AL1之側朝向切線TL之側計測時的角度θ2」為60°以上,160°以下之突起。具體而言,本變化例之第二突起37的「角度θ2」在比120°大,且為160°以下之範圍。In addition, the
本變化例之旋轉機構40在鍍覆處理時,使基板固持器30D正轉(R1)、及反轉(-R1)分別至少進行1次。具體而言,旋轉機構40於鍍覆處理時,亦可使基板固持器30D在指定時間內正轉後再反轉,亦可使基板固持器30D在指定時間內反轉後再正轉,亦可複數次反覆進行基板固持器30D之正轉及反轉(或反轉及正轉)。The
採用本變化例於鍍覆處理時,當基板固持器30D旋轉時(正轉及反轉時),第一突起36及第二突起37中之任何一方「軸線AL1與切線TL形成之角,且係在基板固持器30D之旋轉方向上,從軸線AL1之側朝向切線TL之側計測時的角度」為60°以上,160°以下。具體而言,鍍覆處理時,當基板固持器30D正轉情況下,第一突起36之「角度θ」為60°以上,160°以下,另外,當基板固持器30D反轉情況下,第二突起37之「角度θ2」為60°以上,160°以下。藉此,與鍍覆處理中當基板固持器30D旋轉時之配置於環31之突起的角度並非60°以上,160°以下時(亦即,該突起之角度小於60°,或比160°大時)比較,在基板固持器30之旋轉速度寬廣範圍可獲得高氣泡去除效果。In the plating process with this modification, when the
(實施形態之變化例5)
圖9係實施形態之變化例5的鍍覆裝置1000E之鍍覆槽10周邊構成的示意剖面圖。圖10係示意顯示圖9之B1-B1線剖面的圖。本變化例之鍍覆裝置1000E在進一步具備:至少一個供給口60、及至少一個排出口61這點上係與前述之實施形態的鍍覆裝置1000(圖3)不同。具體而言,本變化例之鍍覆裝置1000E分別具備複數個供給口60及排出口61。
(Variation 5 of the embodiment)
FIG. 9 is a schematic cross-sectional view of the surrounding structure of a
供給口60設於鍍覆槽10之外周壁10b,並構成來供給鍍覆液Ps至鍍覆槽10。排出口61係設於鍍覆槽10的外周壁10b來與供給口60相對。此外,排出口61係構成來吸入鍍覆槽10之鍍覆液Ps並使其從鍍覆槽10排出。供給口60及排出口61藉由排出口61吸入從供給口60供給之鍍覆液Ps,並在鍍覆槽10中之基板Wf的被鍍覆面Wfa下方形成沿著被鍍覆面Wfa之鍍覆液Ps的剪切流(F3)。The
具體而言,如圖9所示,本變化例之供給口60及排出口61配置於比在鍍覆槽10內部之電阻體12還上方的部位。如圖10所示,本變化例之供給口60係相對於鍍覆槽10之外周壁10b的軸線AL2(表示中心軸之線)而遍佈配置於一方側之全周。此外,排出口61係相對於鍍覆槽10之外周壁10b的軸線AL2而遍佈配置於另一方側之全周。換言之,供給口60遍佈外周壁10b之半周部分而配置,排出口61遍佈外周壁10b之另一半周部分而配置。Specifically, as shown in FIG. 9 , the
另外,本變化例中,在鄰接的供給口60之間設有分隔壁62a,並在鄰接的排出口61之間設有分隔壁62b。此外,複數個供給口60之上游側部分合流,將該合流之部分稱為合流口63a。此外,複數個排出口61之下游側的部分合流,並將該合流之部分稱為合流口63b。但是,供給口60及排出口61之構成並非限定於此者。例如,亦可將複數個供給口60之上游側作為不合流的構成,亦可將複數個排出口61之下游側作為不合流的構成。In addition, in this modification, the
此外,供給口60及排出口61之數量只要可形成剪切流(F3)即可,並非限定於複數個者。例如,鍍覆裝置1000E亦可構成僅分別具備1個供給口60及排出口61。此時,在圖10中,例如只要作成不具備分隔壁62a及分隔壁62b的構成即可。亦即,此時,於圖10中,以變成無分隔壁62a的方式,鄰接之供給口60連接而成為一個大的供給口。同樣地,以變成無分隔壁62b的方式,鄰接之排出口61連接而成為一個大的排出口。In addition, the number of the
另外,來自供給口60之鍍覆液Ps的開始供給時期、及來自排出口61之鍍覆液Ps的開始吸入時期至少在開始執行鍍覆處理的時間點開始即可,其具體之時期並非特別限定者。例如,亦可在基板Wf接觸於鍍覆液Ps之前起開始供給及吸入鍍覆液Ps,亦可在將基板Wf浸漬於鍍覆液Ps之後,且在開始鍍覆處理之前開始供給及吸入鍍覆液Ps。In addition, the timing for starting supply of the plating solution Ps from the
採用本變化例,將基板Wf之被鍍覆面Wfa浸漬於鍍覆液Ps時,藉由剪切流(F3)可使產生於基板Wf之被鍍覆面Wfa中央的氣泡輕易朝向被鍍覆面Wfa之外周側移動。藉此,藉由突起35可使移動至該外周側之氣泡有效排出至環31外側。According to this modification, when the plating surface Wfa of the substrate Wf is immersed in the plating solution Ps, the air bubbles generated in the center of the plating surface Wfa of the substrate Wf can be easily directed toward the center of the plating surface Wfa by the shear flow (F3). The peripheral side moves. Thereby, the air bubbles moved to the outer peripheral side can be efficiently discharged to the outside of the
另外,本變化例亦可進一步具備前述變化例1~4中之任何一個特徵。In addition, the present modification may further include any one of the features of the
(實施形態之變化例6)
圖11係用於說明實施形態之變化例6的鍍覆裝置1000F之示意圖。本變化例之鍍覆裝置1000F進一步具備流動機構70,其係構成來使鍍覆槽10之鍍覆液Ps流動,而在將基板Wf之被鍍覆面Wfa浸漬於鍍覆液Ps之前,讓鍍覆槽10中央之鍍覆液Ps的液面向上方隆起。其他構成與前述實施形態之鍍覆裝置1000同樣。
(Variation 6 of the embodiment)
FIG. 11 is a schematic diagram of a
具體而言,本變化例之流動機構70係配置於鍍覆槽10之底壁10a的中央,並藉由朝向上方吐出鍍覆液Ps之吐出口而構成。以該吐出口朝向上方吐出鍍覆液Ps的方式,可輕易將鍍覆槽10中央之鍍覆液Ps的液面向上方隆起。Specifically, the
本變化例之升降機構50在鍍覆槽10中央之鍍覆液Ps的液面向上方隆起之狀態下,使基板固持器30下降。藉此,可使基板Wf之被鍍覆面Wfa的中央比被鍍覆面Wfa之外周緣還先接觸鍍覆液Ps。The elevating
另外,本變化例中,基板固持器30亦可在基板Wf之被鍍覆面Wfa接觸鍍覆液Ps之前開始旋轉,亦可在被鍍覆面Wfa接觸鍍覆液Ps之後旋轉。In addition, in this modification, the
本變化例中,係在鍍覆槽10中配置有電阻體12,不過與前述之實施形態同樣地,亦可不在鍍覆槽10中配置電阻體12而構成。另外,鍍覆槽10中未配置電阻體12時與有配置時比較,可輕易將鍍覆槽10中央之鍍覆液Ps的液面向上方隆起。In this modified example, the
採用本變化例,當基板Wf之被鍍覆面Wfa接觸鍍覆液Ps時,由於可使被鍍覆面Wfa之中央提早接觸液體,因此存在於被鍍覆面Wfa中央之氣泡逃往被鍍覆面Wfa的外周側,而且可使被鍍覆面Wfa浸漬於鍍覆液Ps中。藉此,可藉由突起35使移動至該外周側之氣泡有效排出至環31外側。According to this modification, when the plating surface Wfa of the substrate Wf contacts the plating solution Ps, the center of the plating surface Wfa can be brought into contact with the liquid earlier, so that the air bubbles existing in the center of the plating surface Wfa escape to the plating surface Wfa. On the outer peripheral side, the surface to be plated Wfa can be immersed in the plating solution Ps. As a result, the air bubbles moved to the outer peripheral side can be effectively discharged to the outside of the
另外,本變化例亦可進一步具備前述變化例1~4中之任何一個特徵。In addition, the present modification may further include any one of the features of the
(實施形態之變化例7)
圖12係用於說明實施形態之變化例7的鍍覆裝置1000G之示意圖。本變化例之鍍覆裝置1000G在構成來讓基板Wf之被鍍覆面Wfa在對鍍覆槽10之鍍覆液Ps的水平液面傾斜之狀態下接觸液體這點上與前述實施形態的鍍覆裝置1000不同。
(Variation 7 of the embodiment)
FIG. 12 is a schematic diagram for explaining a
具體而言,本變化例之鍍覆裝置1000G係藉由傾斜機構45來實現上述之構成。更具體而言,鍍覆裝置1000G之傾斜機構45係在基板Wf之被鍍覆面Wfa比鍍覆液Ps之液面還位於上方的狀態下,使基板固持器30對水平面傾斜。其次,在如此基板固持器30傾斜之狀態下,升降機構50使基板固持器30下降,而使基板Wf之被鍍覆面Wfa浸漬於鍍覆液Ps。Specifically, the
另外,本變化例中,基板固持器30亦可在基板Wf之被鍍覆面Wfa接觸鍍覆液Ps之前開始旋轉,亦可在接觸鍍覆液Ps之後旋轉。In addition, in the present modification, the
採用本變化例,當基板Wf之被鍍覆面Wfa接觸鍍覆液Ps時,可利用浮力使存在於被鍍覆面Wfa之氣泡沿著被鍍覆面Wfa移動至斜上方,而且使被鍍覆面Wfa浸漬於鍍覆液Ps。藉此,可使氣泡有效移動至被鍍覆面Wfa之外周側。結果,可藉由突起35使移動至該外周側之氣泡有效排出至環31外側。According to this modification, when the plating surface Wfa of the substrate Wf contacts the plating solution Ps, the air bubbles present on the plating surface Wfa can be moved obliquely upward along the plating surface Wfa by buoyancy, and the plating surface Wfa can be immersed in the plating solution Ps. Thereby, the air bubbles can be efficiently moved to the outer peripheral side of the surface to be plated Wfa. As a result, the air bubbles moved to the outer peripheral side can be efficiently discharged to the outside of the
另外,本變化例亦可進一步具備前述變化例1~4中之任何一個特徵。In addition, the present modification may further include any one of the features of the
(實施形態之變化例8)
圖13係用於說明實施形態之變化例8的鍍覆裝置1000H之示意圖。本變化例之鍍覆裝置1000H以預先在對水平面傾斜之狀態下設置鍍覆裝置1000H的方式,構成來讓基板Wf之被鍍覆面Wfa對鍍覆槽10之鍍覆液Ps的水平液面傾斜之狀態下接觸液體。亦即,本變化例之鍍覆裝置1000H的至少基板固持器30及鍍覆槽10係預先在對水平面傾斜之狀態下設置。本變化例這一點與前述之變化例7的鍍覆裝置1000G不同。另外,本變化例中,鍍覆裝置1000H亦可具備傾斜機構45。
(Variation 8 of the embodiment)
FIG. 13 is a schematic diagram of a
即使本變化例仍可達到與前述變化例7之鍍覆裝置1000G同樣的作用效果。Even this modification can still achieve the same function and effect as the
另外,本變化例亦可進一步具備前述變化例1~4中之任何一個特徵。In addition, the present modification may further include any one of the features of the
(實施形態之變化例9)
圖14係用於說明實施形態之變化例9的鍍覆裝置1000I之示意圖。本變化例之鍍覆裝置1000I在進一步具備槳葉80這點上與前述實施形態的鍍覆裝置1000不同之處。
(Variation 9 of the embodiment)
FIG. 14 is a schematic diagram for explaining a plating apparatus 1000I of Modification 9 of the embodiment. The coating apparatus 1000I of the present modification is different from the
槳葉80配置於比陽極11上方,且比基板Wf下方。具體而言,由於本變化例之鍍覆槽10中,在比陽極11還上方配置有電阻體12,因此,槳葉80配置於比電阻體12還上方,且比基板Wf還下方。槳葉80以藉由槳葉驅動裝置(無圖示)驅動的方式在水平方向往返移動。藉此,攪拌鍍覆槽10之鍍覆液Ps。另外,圖示之「mv」係顯示槳葉80移動方向之一例的符號。The
圖15係顯示從上方辨識槳葉80之情形的示意俯視圖。本變化例之槳葉80具備:在對槳葉80之往返移動方向垂直的方向延伸之複數個攪拌構件81;在複數個攪拌構件81之延伸方向上連結一方側之端部的連結構件82a;及在複數個攪拌構件81之延伸方向上連結另一方側之端部的連結構件82b。槳葉80往返移動時,槳葉80之特別是攪拌構件81攪拌鍍覆液Ps。FIG. 15 is a schematic top view showing a situation in which the
另外,槳葉80往返移動之開始時期,至少在鍍覆處理時開始往返移動即可,其具體之時期並非特別限定者。例如,槳葉80亦可在基板Wf接觸鍍覆液Ps之前開始往返移動。或是,槳葉80亦可在基板Wf接觸鍍覆液Ps後,且在開始鍍覆處理前(開始對基板Wf通電之前)開始往返移動。In addition, the start timing of the reciprocating movement of the
採用本變化例時,以藉由槳葉80攪拌鍍覆液Ps的方式,可使存在於基板Wf之被鍍覆面Wfa的氣泡有效移動至被鍍覆面Wfa之外周側。藉此,可藉由突起35使移動至該外周側之氣泡有效排出至環31外側。According to this modification, by stirring the plating solution Ps with the
另外,本變化例亦可進一步具備前述變化例1~4中之任何一個特徵。In addition, the present modification may further include any one of the features of the
以上,詳述了本發明之實施形態及變化例,不過本發明並非限定於該特定之實施形態及變化例者,在記載於申請專利範圍之本發明的要旨範圍內可進一步實施各種修改、變更。The embodiments and modifications of the present invention have been described above in detail, however, the present invention is not limited to the specific embodiments and modifications, and various modifications and changes can be further implemented within the scope of the gist of the present invention described in the scope of the claims. .
10:鍍覆槽
10a:底壁
10b:外周壁
11:陽極
12:電阻體
20:溢流槽
30,30A~D:基板固持器
31:環
31a:下面
31b:內周面
35,35A,35B:突起
36:第一突起
37:第二突起
40:旋轉機構
45:傾斜機構
50:升降機構
51:支軸
60:供給口
61:排出口
62a,62b:分隔壁
63a,63b:合流口
70:流動機構
80:槳葉
400:鍍覆模組
800:控制模組
1000,1000A~I:鍍覆裝置
10:
AL1,AL2:軸線 AL1,AL2: axis
TL:切線 TL: Tangent
Bu:氣泡 Bu: bubble
Wf:基板 Wf: substrate
F3:剪切流 F3: Shear Flow
Wfa:被鍍覆面 Wfa: plated surface
Ps:鍍覆液 Ps: plating solution
θ,θ2:角度 θ, θ2: angle
圖1係顯示實施形態之鍍覆裝置的整體構成立體圖。
圖2係顯示實施形態之鍍覆裝置的整體構成俯視圖。
圖3係顯示實施形態之鍍覆裝置中的鍍覆模組之構成示意圖。
圖4係顯示實施形態之基板浸漬於鍍覆液的情形之示意剖面圖。
圖5係實施形態之基板固持器的示意底視圖。
圖6(A)係實施形態之變化例1的鍍覆裝置之基板固持器的突起附近部分之示意底視圖。圖6(B)係實施形態之變化例2的鍍覆裝置之基板固持器的突起附近部分之示意底視圖。
圖7係實施形態之變化例3的鍍覆裝置之基板固持器的示意底視圖。
圖8係實施形態之變化例4的鍍覆裝置之基板固持器的示意底視圖。
圖9係實施形態之變化例5的鍍覆裝置之鍍覆槽周邊構成的示意剖面圖。
圖10係圖9之B1-B1線剖面的示意圖。
圖11係用於說明實施形態之變化例6的鍍覆裝置之示意圖。
圖12係用於說明實施形態之變化例7的鍍覆裝置之示意圖。
圖13係用於說明實施形態之變化例8的鍍覆裝置之示意圖。
圖14係用於說明實施形態之變化例9的鍍覆裝置之示意圖。
圖15係實施形態之變化例9的槳葉之示意俯視圖。
FIG. 1 is a perspective view showing the overall configuration of a coating apparatus according to an embodiment.
FIG. 2 is a plan view showing the overall configuration of the coating apparatus according to the embodiment.
FIG. 3 is a schematic diagram showing the structure of the coating module in the coating apparatus of the embodiment.
FIG. 4 is a schematic cross-sectional view showing a state in which the substrate of the embodiment is immersed in a plating solution.
5 is a schematic bottom view of the substrate holder of the embodiment.
FIG. 6(A) is a schematic bottom view of a portion near the protrusion of the substrate holder of the plating apparatus according to
10:鍍覆槽 10: Plating tank
10a:底壁 10a: Bottom wall
10b:外周壁 10b: Peripheral wall
11:陽極 11: Anode
12:電阻體 12: Resistor body
20:溢流槽 20: Overflow tank
30:基板固持器 30: Substrate holder
31:環 31: Ring
31a:下面 31a: Below
31b:內周面 31b: inner peripheral surface
35:突起 35: Protrusions
40:旋轉機構 40: Rotary Mechanism
45:傾斜機構 45: Tilt Mechanism
50:升降機構 50: Lifting mechanism
51:支軸 51: Pivot
400:鍍覆模組 400: Plating module
1000:鍍覆裝置 1000: Coating device
Wf:基板 Wf: substrate
Wfa:被鍍覆面 Wfa: plated surface
Claims (11)
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Citations (2)
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CN1674231A (en) * | 2002-07-25 | 2005-09-28 | 松下电器产业株式会社 | Plating apparatus |
TWI254085B (en) * | 2000-10-26 | 2006-05-01 | Ebara Corp | Nonelectrolysis plating device and method thereof |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI254085B (en) * | 2000-10-26 | 2006-05-01 | Ebara Corp | Nonelectrolysis plating device and method thereof |
CN1674231A (en) * | 2002-07-25 | 2005-09-28 | 松下电器产业株式会社 | Plating apparatus |
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