TWI801776B - Producing method of pd-adsorbed zno nanostructures - Google Patents

Producing method of pd-adsorbed zno nanostructures Download PDF

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TWI801776B
TWI801776B TW109141122A TW109141122A TWI801776B TW I801776 B TWI801776 B TW I801776B TW 109141122 A TW109141122 A TW 109141122A TW 109141122 A TW109141122 A TW 109141122A TW I801776 B TWI801776 B TW I801776B
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zinc oxide
palladium
nanocolumns
nanopillars
indium tin
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TW202221154A (en
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楊勝州
朱彥霖
姬梁文
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國立聯合大學
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Abstract

The present invention reveals a producing method of Pd-adsorbed ZnO nanostructures comprising: preparing an ITO substrate which comprising a plurality of Zinc oxide (ZnO) nanostructures; using a photochemical reaction method to adsorb a number of palladium (Pd) nanoparticles on the surface of ZnO nanostructures. Compare to the traditional away, such as E-beam Evaporator system or Thermal Evaporation Deposition system, the present invention by using a photochemical reaction method not only achieves the effects with simplifying the producing steps, down costing the price, but also improves the development of the field emission.

Description

吸附鈀之氧化鋅奈米柱的製程方法Process method of zinc oxide nanocolumn adsorbing palladium

一種用於場發射器之氧化鋅奈米柱,特別是一種吸附鈀之氧化鋅奈米柱及其光化學法 A zinc oxide nanocolumn for field emitters, especially a zinc oxide nanocolumn that adsorbs palladium and its photochemical method

場發射的應用與現代生活中有密不可分的關係,包括用於人們的生活的平板顯示器以及用於醫學和研究領域的電子束顯微鏡等等,使得近年來場發射在顯示器和電子設備的應用得到廣泛的研究。現行的一場發射器的製成大多為在一銦錫氧化物基板長成複數個奈米結構(如奈米柱或是奈米管),然而,該場發射器的優缺點可以歸因於許多因素,包含該場發射器的奈米結構、奈米材質、導電率、功函數等等,因此如何提升該場發射器的質量與性能是現在場發射領域中最主要的目標。 The application of field emission has an inseparable relationship with modern life, including flat panel displays used in people's lives and electron beam microscopes used in medical and research fields, etc., making the application of field emission in displays and electronic devices in recent years. Extensive research. Most of the current field emitters are made by growing a plurality of nanostructures (such as nanopillars or nanotubes) on an indium tin oxide substrate. However, the advantages and disadvantages of this field emitter can be attributed to many Factors include the nanostructure, nanomaterials, electrical conductivity, work function, etc. of the field emitter. Therefore, how to improve the quality and performance of the field emitter is the most important goal in the field emission field.

為提升該場發射器的質量與性能,金屬氧化物半導體(metal oxide semiconductor,MOS)常作為發展的目標,其中因氧化鋅在室溫下具備了1.寬能隙(3.37eV)而有較佳等電性;2.高電子束縛能(60meV)使其有優良的發光率及非線性光學係數特性;3.本身化學穩定性特性不具有毒性且材料便宜,使得氧化鋅成為場發射領域中相當熱門的奈米研究材料。 In order to improve the quality and performance of the field emitter, metal oxide semiconductor (MOS) is often used as the target of development, among which ZnO has a wide energy gap (3.37eV) at room temperature. Good isoelectricity; 2. High electron binding energy (60meV) makes it have excellent luminous rate and nonlinear optical coefficient characteristics; 3. Its own chemical stability characteristics are not toxic and the material is cheap, making zinc oxide a popular choice in the field emission field Very popular nano research materials.

另外在金屬氧化物半導體與場發射器的研究領域中,更有在一金屬氧化物半導體中摻雜加一貴金屬奈米粒子(如白金、鈀、金及銀等等)進行氧化物半導體修飾,借此提高該場發射器的性能。然而現行技術中多半需利用 電子束蒸鍍系統或是熱蒸鍍系統才可使得該金屬氧化物半導體表面濺渡有該貴金屬奈米粒子,不僅價格昂貴、步驟繁瑣,更不利於場發射領域的發展。 In addition, in the research field of metal oxide semiconductors and field emitters, a metal oxide semiconductor is doped with a noble metal nanoparticle (such as platinum, palladium, gold and silver, etc.) for oxide semiconductor modification, This increases the performance of the field emitter. However, most of the existing technologies need to use The electron beam evaporation system or the thermal evaporation system can sputter the noble metal nanoparticles on the surface of the metal oxide semiconductor, which is not only expensive and complicated, but also unfavorable for the development of the field emission field.

為解決現行場發射領域中在提升該場發射器的質量與性能之技術領域之餘更可以降低製造成本、縮減製程步驟,本發明提供一種吸附鈀之氧化鋅奈米柱的製程方法,吸附鈀之氧化鋅奈米柱的製程方法其步驟包含:備置一銦錫氧化物基板,該銦錫氧化物基板上長有複數個氧化奈米柱;利用一光化學反應,使得複數個該氧化鋅奈米柱表面吸附有複數個鈀奈米粒子。 In order to solve the technical field of improving the quality and performance of the field emitter in the current field emission field, it can also reduce the manufacturing cost and reduce the process steps. The manufacturing method of zinc oxide nanopillars comprises the following steps: preparing an indium tin oxide substrate on which a plurality of oxide nanopillars grow; using a photochemical reaction to make the plurality of zinc oxide nanopillars There are complex palladium nanoparticles adsorbed on the surface of the rice pillar.

其中,該光化學反應的步驟包含:將一氯化鈀水溶液滴至複數個該氧化鋅奈米柱上;以及將滴有該氯化鈀水溶液的複數個該氧化鋅奈米柱暴露於一紫外線光源。 Wherein, the step of the photochemical reaction includes: dropping a palladium chloride aqueous solution onto a plurality of the zinc oxide nanocolumns; and exposing the plurality of the zinc oxide nanocolumns dripped with the palladium chloride aqueous solution to an ultraviolet ray light source.

其中,利用一濺渡方法將一氧化鋅薄膜成形於該銦錫氧化物基板上,該濺渡方法包含一射頻磁控濺鍍系統。 Wherein, a zinc oxide film is formed on the indium tin oxide substrate by a sputtering method, and the sputtering method includes a radio frequency magnetron sputtering system.

其中,該氧化鋅薄膜的厚度為25奈米(nm)-100奈米(nm)之間。 Wherein, the thickness of the zinc oxide film is between 25 nanometers (nm) and 100 nanometers (nm).

其中,利用一水熱法長成複數個該氧化鋅奈米柱,該熱水法的步驟包含:將該銦錫氧化物基板浸入以莫耳濃度比為1:1混和的六水合硝酸鋅和環六亞甲基四胺溶液中;以及於90℃的環境下反應6小時。 Wherein, using a hydrothermal method to grow a plurality of the zinc oxide nanocolumns, the step of the hydrothermal method includes: immersing the indium tin oxide substrate in a molar concentration ratio of 1:1 mixed with zinc nitrate hexahydrate and in the cyclohexamethylenetetramine solution; and reacted at 90° C. for 6 hours.

其中,該氯化鈀水溶液的體積為500微升,該氯化鈀水溶液濃度為每升1毫莫耳。 Wherein, the volume of the palladium chloride aqueous solution is 500 microliters, and the concentration of the palladium chloride aqueous solution is 1 millimole per liter.

其中,該紫外線光源波長為365奈米,該紫外線光源強度為0.496毫瓦,複數個該氧化鋅奈米柱暴露於該一紫外線光源的持續時間為480秒。 Wherein, the wavelength of the ultraviolet light source is 365 nm, the intensity of the ultraviolet light source is 0.496 milliwatts, and the duration of exposure of the plurality of zinc oxide nanopillars to the ultraviolet light source is 480 seconds.

進一步地,該銦錫氧化物基板於上鍍有一銀層作為接觸電極。 Further, the indium tin oxide substrate is plated with a silver layer as a contact electrode.

相較於該該氧化鋅奈米柱,當給予該吸附鈀之氧化鋅奈米柱相同的一電場,該吸附鈀之氧化鋅奈米柱的場發射性能明顯的優於該氧化鋅奈米柱。 Compared with the zinc oxide nanopillars, when the same electric field is given to the zinc oxide nanopillars adsorbing palladium, the field emission performance of the zinc oxide nanopillars adsorbing palladium is significantly better than that of the zinc oxide nanopillars .

相較於傳統上需利用電子束蒸鍍系統或是熱蒸鍍系統才可使得該氧化鋅奈米柱表面濺渡有該鈀奈米粒子,本發明利用該光化學反應使該鈀離子自溶液中吸附於該氧化鋅奈米柱13表面不僅步驟簡單,價格便宜,更有利於場發射領域的發展。 Compared with the traditional electron beam evaporation system or thermal evaporation system to sputter the palladium nanoparticles on the surface of the zinc oxide nanopillars, the present invention utilizes the photochemical reaction to make the palladium ions from the solution The adsorption on the surface of the zinc oxide nano-column 13 is not only simple in steps and cheap in price, but also conducive to the development of the field emission field.

10:吸附鈀之氧化鋅奈米柱 10: Zinc Oxide Nanocolumns Adsorbing Palladium

11:銦錫氧化物基板 11: Indium tin oxide substrate

12:氧化鋅薄膜 12: Zinc oxide film

13:氧化鋅奈米柱 13: ZnO nanopillars

14:鈀奈米粒子 14: Palladium nanoparticles

15:銀層 15: silver layer

20:氯化鈀水溶液 20: palladium chloride aqueous solution

30:紫外線光源 30: UV light source

e-:電子 e - : electron

圖1為本發明較佳實施例步驟圖 Fig. 1 is a step diagram of a preferred embodiment of the present invention

圖2為本發明較佳實施例電顯圖 Fig. 2 is the electric display diagram of preferred embodiment of the present invention

圖3為本發明較佳實施例X光繞射儀分析圖 Fig. 3 is the X-ray diffractometer analysis figure of preferred embodiment of the present invention

圖4為本發明較佳實施例光致螢光發光譜儀分析圖 Fig. 4 is the analysis diagram of photoluminescence spectrometer of preferred embodiment of the present invention

圖5為本發明較佳實施例場發射結果圖 Fig. 5 is a field emission result figure of a preferred embodiment of the present invention

圖6為本發明較佳實施例場發射斜率圖 Fig. 6 is a field emission slope diagram of a preferred embodiment of the present invention

圖7為本發明較佳實施例外加電場測量場發射能帶示意圖 Fig. 7 is a schematic diagram of the field emission energy band measured by an externally applied electric field in a preferred embodiment of the present invention

如圖1,其為本發明較佳實施例所提供的一種吸附鈀之氧化鋅奈米柱10的製程方法,其步驟含:1.備置以及清潔一銦錫氧化物基板11,該銦錫氧化物基板11底部為一玻璃板,該玻璃板上層鍍有一銦錫氧化物薄膜,利用丙酮(acetone)、甲醇(isopropyl alcohol)以及去離子水並且搭配超音波震盪器清洗該銦錫氧化物基板11。2.利用射頻磁控濺鍍系統(RF magnetron sputtering system),於真空的環境(4*10-6Torr)下,將直徑為3-inch的氧化鋅奈米粒子濺渡於該銦錫氧化 物基板11上層,形成一氧化鋅薄膜12,該氧化鋅薄膜12的厚度約為25奈米(nm)-100奈米(nm)之間。3.利用一水熱法(hydrothermal method)長成複數個氧化鋅奈米柱13。4.利用一光化學反應,使得複數個該氧化鋅奈米柱13表面吸附有複數個鈀奈米粒子14。5.於真空的環境(6*10-6Torr)下,該銦錫氧化物基板11於上鍍上一銀層15作為接觸電極,該銀層15的厚度約為100奈米(nm)。 As shown in Fig. 1, it is a kind of manufacturing process method of zinc oxide nanocolumn 10 that adsorbs palladium that the preferred embodiment of the present invention provides, and its steps include: 1. prepare and clean an indium tin oxide substrate 11, this indium tin oxide The bottom of the object substrate 11 is a glass plate, and the upper layer of the glass plate is coated with an indium tin oxide film. The indium tin oxide substrate 11 is cleaned by using acetone, methanol (isopropyl alcohol) and deionized water with an ultrasonic oscillator. 2. Using the RF magnetron sputtering system (RF magnetron sputtering system), in a vacuum environment (4*10 -6 Torr), sputter zinc oxide nanoparticles with a diameter of 3-inch on the indium tin oxide A zinc oxide film 12 is formed on the upper layer of the object substrate 11, and the thickness of the zinc oxide film 12 is approximately between 25 nanometers (nm) and 100 nanometers (nm). 3. Use a hydrothermal method (hydrothermal method) to grow into a plurality of zinc oxide nanopillars 13. 4. Use a photochemical reaction to make a plurality of zinc oxide nanopillars 13 surface adsorbed with a plurality of palladium nanoparticles 14 5. In a vacuum environment (6*10 -6 Torr), the indium tin oxide substrate 11 is plated with a silver layer 15 as a contact electrode, and the thickness of the silver layer 15 is about 100 nanometers (nm) .

其中該熱水法的步驟及條件包含:1.將鍍有該氧化鋅層12的該銦錫氧化物基板11浸入以莫耳濃度比(molarity ratio)為1:1混和的六水合硝酸鋅(Zn(NO3)2_6H2O)和環六亞甲基四胺(hexamethylenetetramine,C6H12N4,HMTA)溶液中。2.於90℃的環境下反應6小時長成複數個該氧化鋅奈米柱13。 The steps and conditions of the hot water method include: 1. The indium tin oxide substrate 11 coated with the zinc oxide layer 12 is immersed in zinc nitrate hexahydrate ( Zn(NO3)2_6H2O) and hexamethylenetetramine (C6H12N4, HMTA) solution. 2. Reacting for 6 hours in an environment of 90° C. to grow a plurality of the zinc oxide nanopillars 13 .

其中該光化學反應的步驟及條件包含:1.將500微升(μL)的一氯化鈀(PdCl2)水溶液20滴至複數個該氧化鋅奈米柱13上,該氯化鈀水溶液較佳的濃度為每升1毫莫耳(1mM)。2.將滴有該氯化鈀水溶液20的複數個該氧化鋅奈米柱13暴露於一紫外線光源30,本實施例中,該紫外線光源30波長為365奈米(nm)且強度為0.496毫瓦(mW),複數個該氧化鋅奈米柱13暴露於該一紫外線光源30的持續時間為480秒。當該氧化鋅奈米柱13與該氯化鈀水溶液20反應時該氯化鈀水溶液20中的複數個鈀離子(Pd2+)會與該氧化鋅奈米柱13的複數個氧原子反應,並且吸附於該氧化鋅奈米柱13的表面,透過該紫外線光源30的照射,複數個該鈀離子經由光化學反應還原成複數個該鈀奈米粒子14,並且複數個該鈀奈米粒子14成形於複數個該氧化鋅奈米柱13表面。 Wherein the steps and conditions of the photochemical reaction include: 1. 20 drops of 500 microliters (μL) of palladium monochloride (PdCl ) aqueous solution onto a plurality of the zinc oxide nanocolumns 13, the palladium chloride aqueous solution is preferably The concentration is 1 millimolar (1 mM) per liter. 2. Expose the plurality of zinc oxide nanocolumns 13 dripped with the palladium chloride aqueous solution 20 to an ultraviolet light source 30. In the present embodiment, the ultraviolet light source 30 has a wavelength of 365 nanometers (nm) and an intensity of 0.496 mm In watts (mW), the duration of exposure of the plurality of ZnO nanopillars 13 to the ultraviolet light source 30 is 480 seconds. When the zinc oxide nanocolumn 13 reacts with the palladium chloride aqueous solution 20, the plurality of palladium ions (Pd 2+ ) in the palladium chloride aqueous solution 20 will react with the plurality of oxygen atoms of the zinc oxide nanocolumn 13, And adsorbed on the surface of the zinc oxide nanocolumn 13, through the irradiation of the ultraviolet light source 30, the plurality of palladium ions are reduced into a plurality of the palladium nanoparticles 14 through a photochemical reaction, and the plurality of the palladium nanoparticles 14 It is formed on the surfaces of a plurality of zinc oxide nanopillars 13 .

相較於傳統上需利用電子束蒸鍍系統或是熱蒸鍍系統才可使得該氧化鋅奈米柱13表面濺渡有該鈀奈米粒子14,本發明利用該光化學反應使該鈀離子自溶液中吸附於該氧化鋅奈米柱13表面不僅步驟簡單,價格便宜,更有利於場發射領域的發展。 Compared with the traditional electron beam evaporation system or thermal evaporation system to sputter the palladium nanoparticles 14 on the surface of the zinc oxide nanopillars 13, the present invention utilizes the photochemical reaction to make the palladium ions Adsorbing on the surface of the zinc oxide nanocolumn 13 from the solution is not only simple in steps and cheap in price, but also conducive to the development of the field emission field.

本發明後續將進一步的比較複數個該氧化鋅奈米柱13與複數個該吸附鈀之氧化鋅奈米柱10的差異。圖2所示為本發明較佳實施例電顯圖,拍攝複數個該氧化鋅奈米柱13與複數個該吸附鈀之氧化鋅奈米柱10長成後的型態。左排(a)、(b)分別為複數個該氧化鋅奈米柱13與複數個該吸附鈀之氧化鋅奈米柱10俯視圖;右排(c)、(d)則分別為複數個該氧化鋅奈米柱13與複數個該吸附鈀之氧化鋅奈米柱10側視圖。經測量後,複數個該氧化鋅奈米柱13以及複數個該吸附鈀之氧化鋅奈米柱10平均直徑分別約為83和86奈米(nm),而平均長度分別約2.11和2.14微米(μm)。由俯視圖(a)及(b)中皆可看出,複數個該氧化鋅奈米柱13以及複數個該吸附鈀之氧化鋅奈米柱10為一六角結構柱狀體。其中,由(b)圖中右上角放大圖(e)可以觀察出該吸附鈀之氧化鋅奈米柱10之表面略微粗糙,可以得知有複數個該鈀奈米粒子14吸附於複數個該吸附鈀之氧化鋅奈米柱10表面。 In the follow-up of the present invention, the difference between the plurality of zinc oxide nanopillars 13 and the plurality of zinc oxide nanopillars 10 adsorbing palladium will be further compared. FIG. 2 is an electromicrograph of a preferred embodiment of the present invention, photographing a plurality of zinc oxide nanopillars 13 and a plurality of palladium-adsorbed zinc oxide nanopillars 10 after they are grown. The left row (a), (b) is the top view of the plurality of zinc oxide nanopillars 13 and the plurality of zinc oxide nanopillars 10 adsorbing palladium; the right row (c), (d) is the plurality of the zinc oxide nanopillars 10 A side view of the ZnO nanopillars 13 and the plurality of ZnO nanopillars 10 adsorbing palladium. After measurement, the average diameters of the plurality of zinc oxide nanopillars 13 and the plurality of zinc oxide nanopillars 10 adsorbing palladium are about 83 and 86 nanometers (nm), and the average lengths are about 2.11 and 2.14 micrometers ( μm). It can be seen from the top views (a) and (b) that the plurality of ZnO nanopillars 13 and the plurality of ZnO nanopillars 10 adsorbing palladium are columns with a hexagonal structure. Wherein, from the enlarged view (e) in the upper right corner of the figure (b), it can be observed that the surface of the zinc oxide nanopillar 10 adsorbing palladium is slightly rough, and it can be known that there are a plurality of the palladium nanoparticles 14 adsorbed on the plurality of the palladium nanoparticles. The surface of the zinc oxide nanopillar 10 that adsorbs palladium.

圖3為本發明較佳實施例X光繞射儀分析圖,X光繞射儀用於偵測晶體材料的特性,包含結構,相位以及晶體取向等等結構參數的分析。X光繞射峰質是由從每組樣品的晶格面在特定角度繞射的單色光建設性干涉產生的,峰值的強度由晶格內原子的分布來決定。配合比對粉末衍射標準聯合委員會(Joint Committee on Powder Diffraction Standards,JCPDS)資料庫中卡號36-1451可看出,氧化鋅是非均向成長的六角纖鋅礦結構,明顯的(002)峰值可以表明複數個該氧化鋅奈米柱13以及複數個該吸附鈀之氧化鋅奈米柱10優先以c軸方向快速生長,沒有發現其他衍射峰,則可表明沒有雜質存在。 3 is an analysis diagram of an X-ray diffractometer in a preferred embodiment of the present invention. The X-ray diffractometer is used to detect the characteristics of crystal materials, including the analysis of structural parameters such as structure, phase, and crystal orientation. The X-ray diffraction peak quality is produced by the constructive interference of monochromatic light diffracted from the lattice plane of each sample at a specific angle, and the intensity of the peak is determined by the distribution of atoms in the lattice. It can be seen from the card number 36-1451 in the database of the Joint Committee on Powder Diffraction Standards (JCPDS) that the ratio of zinc oxide is an anisotropic growth hexagonal wurtzite structure, and the obvious (002) peak can indicate that The plurality of zinc oxide nanopillars 13 and the plurality of palladium-adsorbed zinc oxide nanopillars 10 preferentially grow rapidly in the direction of the c-axis, and no other diffraction peaks are found, indicating that there are no impurities.

圖4為本發明較佳實施例光致螢光發光譜儀分析圖,由圖中可看出有一主要峰值,該主要峰值落在380nm,其中,380nm的峰值可以對應為該氧化鋅奈米柱13以及該吸附鈀之氧化鋅奈米柱10氧化鋅的近帶隙發射(near-band edge emission)以及自由激子重組(free excitionic recombination)能力,其中,該吸附鈀之氧化鋅奈米柱10向對於該氧化鋅奈米柱13具有較低的峰值強度,這可能 是由於光激發電子以在導帶中從氧化鋅移動到該鈀奈米粒子,從而導致氧化鋅中的電子-空穴複合減少,而光感應電子和空穴的分離相增加,並導致的光致發光強度降低。 Fig. 4 is the photoluminescence spectrometer analysis figure of preferred embodiment of the present invention, can find out from the figure that there is a main peak, and this main peak falls on 380nm, and wherein, the peak of 380nm can correspond to this zinc oxide nanocolumn 13 And the near-band gap emission (near-band edge emission) and free exciton recombination (free excitionic recombination) capabilities of the zinc oxide nanopillar 10 of the adsorbed palladium zinc oxide, wherein, the zinc oxide nanopillar 10 of the adsorbed palladium is towards For the ZnO nanopillars 13 have lower peak intensity, which may It is due to photoexcitation of electrons to move from ZnO to the Pd nanoparticles in the conduction band, resulting in a decrease in electron-hole recombination in ZnO, and an increase in the separation phase of photoinduced electrons and holes, resulting in a photon Luminescence intensity decreased.

圖5為本發明較佳實施例場發射結果圖,由圖所示當電流密度為10-5安培/公分2(A/cm2)時,該氧化鋅奈米柱13的開啟電場值為6.68伏特/微米(V/μm),然而該吸附鈀之氧化鋅奈米柱10的開啟電場值下降為6.43伏特/微米(V/μm),這是因為該吸附鈀之氧化鋅奈米柱10提供了更多的載子,使得電子更容易穿隧。根據穿隧電流F-N公式可得知turn-on電場強度下降則場增強因子(β)值會上升,而增強因子通常可作為判斷元件好壞的依據,因此由數據可得知有該吸附鈀之氧化鋅奈米柱10更適合作為一個場發射元件。 FIG. 5 is a graph showing the field emission results of a preferred embodiment of the present invention. As shown in the graph, when the current density is 10 -5 ampere/cm 2 (A/cm 2 ), the open electric field value of the zinc oxide nanocolumn 13 is 6.68 Volts/micrometer (V/μm), yet the turn-on electric field value of the ZnO nanocolumn 10 that adsorbs palladium drops to 6.43 volts/micrometer (V/μm), this is because the ZnO nanocolumn 10 that adsorbs palladium provides More carriers are added, making it easier for electrons to tunnel. According to the tunneling current FN formula, it can be known that the value of the field enhancement factor (β) will increase when the turn-on electric field strength decreases, and the enhancement factor can usually be used as the basis for judging whether the component is good or bad. Therefore, it can be known from the data that there is a reason for the adsorption of palladium The ZnO nanocolumn 10 is more suitable as a field emission device.

圖6為本發明較佳實施例場發射斜率圖,根據穿隧電流F-N公式進一步的得到一ln(J/E2)和1/E的場發射斜率圖,該氧化鋅奈米柱13和該吸附鈀之氧化鋅奈米柱10場發射的斜率分別為31.48和14.01,當給予氧化鋅材質一5.3電子伏特(electron volt,eV),該氧化鋅奈米柱13和該吸附鈀之氧化鋅奈米柱10場發射的增強因子(β)值分別為2546.69以及5947.07,由結果可知該吸附鈀之氧化鋅奈米柱10明顯的提高了增強因子(β)值,表現了更佳的場發射性能。 FIG. 6 is a field emission slope diagram of a preferred embodiment of the present invention. According to the tunneling current FN formula, a field emission slope diagram of ln(J/E 2 ) and 1/E is further obtained. The zinc oxide nanocolumn 13 and the The slopes of the field emission of the zinc oxide nanopillars 10 adsorbing palladium are 31.48 and 14.01 respectively. The field emission enhancement factor (β) values of rice pillars 10 are 2546.69 and 5947.07 respectively. From the results, it can be seen that the zinc oxide nanopillars 10 with palladium adsorption significantly improved the enhancement factor (β) value, showing better field emission performance .

如圖7所示其為本發明較佳實施例外加電場測量場發射能帶示意圖,如圖7(a),為該氧化鋅奈米柱13的場發射能帶示意圖,當給予該氧化鋅奈米柱13施加一電場後,當電子e-從一價帶(valance band)獲得能量而跳躍過一能隙(Eg)至傳導帶(conduction band)時,該氧化鋅奈米柱13的該傳導帶(conduction band)彎曲至費米能階(Fermi level),產生一量子井(quantum well),使得電子e-可以儲存至該量子井(quantum well)中並且隧穿到真空能級(vacuum level)產生一電流。然而,如圖7(a)所示,當給予該吸附鈀之氧化鋅奈米柱10相同的一電場,該 吸附鈀之氧化鋅奈米柱10的場發射性能明顯的優於該氧化鋅奈米柱13,其原因可以歸納如下: As shown in Figure 7, it is a schematic diagram of the field emission energy band measured by an external electric field in a preferred embodiment of the present invention. After the rice column 13 applies an electric field, when the electron e obtains energy from a valance band (valance band) and jumps over an energy gap (Eg) to the conduction band (conduction band), the conduction of the zinc oxide nano column 13 The conduction band bends to the Fermi level, creating a quantum well into which electrons e - can be stored and tunneled to the vacuum level ) produces a current. However, as shown in Figure 7(a), when the same electric field is given to the ZnO nanocolumn 10 adsorbing palladium, the field emission performance of the ZnO nanocolumn 10 adsorbing palladium is significantly better than that of the ZnO nanocolumn. Mizhu 13, the reasons can be summarized as follows:

1.由於貴金屬鈀可以吸附較多的電子e-,增強整體導電性。 1. Since the noble metal palladium can absorb more electrons e - , the overall conductivity is enhanced.

2.該吸附鈀之氧化鋅奈米柱10的異質結構,進一步的增加該量子井(quantum well)的儲存能力,使得較多的電子e-可大量聚集於該量子井(quantum well)中,隧穿到真空能級(vacuum level)的電子e-數量增加,電流的傳遞相對提昇。 2. The heterostructure of the palladium-adsorbed zinc oxide nanocolumn 10 further increases the storage capacity of the quantum well (quantum well), so that more electrons e - can be gathered in large quantities in the quantum well (quantum well), The number of electrons e- tunneling to the vacuum level increases, and the transfer of current is relatively improved.

10:吸附鈀之氧化鋅奈米柱 10: Zinc Oxide Nanocolumns Adsorbing Palladium

11:銦錫氧化物基板 11: Indium tin oxide substrate

12:氧化鋅薄膜 12: Zinc oxide film

13:氧化鋅奈米柱 13: ZnO nanopillars

14:鈀奈米粒子 14: Palladium nanoparticles

15:銀層 15: silver layer

20:氯化鈀水溶液 20: palladium chloride aqueous solution

30:紫外線光源 30: UV light source

Claims (5)

一種吸附鈀之氧化鋅奈米柱的製程方法,其步驟包含:備置一銦錫氧化物基板,該銦錫氧化物基板上長有複數個氧化奈米柱;以及利用一光化學反應,使得複數個該氧化鋅奈米柱表面吸附有複數個鈀奈米粒子,該光化學反應的步驟包含:將一氯化鈀水溶液滴至複數個該氧化鋅奈米柱上;以及將滴有該氯化鈀水溶液的複數個該氧化鋅奈米柱暴露於一紫外線光源其中:該氯化鈀水溶液的體積為500微升,且該氯化鈀水溶液濃度為每升1毫莫耳;該紫外線光源波長為365奈米,該紫外線光源強度為0.496毫瓦;以及複數個該氧化鋅奈米柱暴露於該紫外線光源的持續時間為480秒。 A method for manufacturing zinc oxide nanocolumns that adsorb palladium, the steps include: preparing an indium tin oxide substrate, on which a plurality of oxide nanocolumns grow; and using a photochemical reaction to make the complex A plurality of palladium nanoparticles are adsorbed on the surface of the zinc oxide nanocolumns, and the steps of the photochemical reaction include: dropping an aqueous solution of palladium chloride onto the plurality of the zinc oxide nanocolumns; A plurality of the zinc oxide nanocolumns of the palladium aqueous solution are exposed to an ultraviolet light source: the volume of the palladium chloride aqueous solution is 500 microliters, and the concentration of the palladium chloride aqueous solution is 1 millimole per liter; the wavelength of the ultraviolet light source is 365 nm, the intensity of the ultraviolet light source is 0.496 milliwatts; and the duration of exposure of the plurality of zinc oxide nanopillars to the ultraviolet light source is 480 seconds. 如請求項1所述之吸附鈀之氧化鋅奈米柱的製程方法,利用一濺渡方法將一氧化鋅薄膜成形於該銦錫氧化物基板上,該濺渡方法包含一射頻磁控濺鍍系統。 The process method of zinc oxide nanopillars adsorbing palladium as described in claim 1, using a sputtering method to form a zinc oxide film on the indium tin oxide substrate, the sputtering method includes a radio frequency magnetron sputtering system. 如請求項2所述之吸附鈀之氧化鋅奈米柱的製程方法,該氧化鋅薄膜的厚度為25奈米(nm)-100奈米(nm)之間。 According to the process method of zinc oxide nanocolumns adsorbing palladium described in claim 2, the thickness of the zinc oxide film is between 25 nanometers (nm) and 100 nanometers (nm). 如請求項1或2所述之吸附鈀之氧化鋅奈米柱的製程方法,利用一水熱法長成複數個該氧化鋅奈米柱,該熱水法的步驟包含:將該銦錫氧化物基板浸入以莫耳濃度比為1:1混和的六水合硝酸鋅和環六亞甲基四胺溶液中;以及於90℃的環境下反應6小時。 The process method of zinc oxide nanocolumns adsorbing palladium as described in claim 1 or 2 uses a hydrothermal method to grow a plurality of the zinc oxide nanocolumns, and the steps of the hydrothermal method include: oxidizing the indium tin The object substrate was immersed in a solution of zinc nitrate hexahydrate and cyclohexamethylenetetramine mixed at a molar concentration ratio of 1:1; and reacted at 90° C. for 6 hours. 如請求項1或2所述之吸附鈀之氧化鋅奈米柱的製程方法,該銦錫氧化物基板於上鍍有一銀層作為接觸電極。 According to the manufacturing method of zinc oxide nanopillars with palladium adsorption as described in claim 1 or 2, the indium tin oxide substrate is plated with a silver layer as a contact electrode.
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CN1499648A (en) * 2002-10-30 2004-05-26 佳能株式会社 Zinc oxide film and photoelectric element using it, and forming method of zinc oxide film
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