TW202221154A - Producing method of pd-adsorbed zno nanostructures - Google Patents

Producing method of pd-adsorbed zno nanostructures Download PDF

Info

Publication number
TW202221154A
TW202221154A TW109141122A TW109141122A TW202221154A TW 202221154 A TW202221154 A TW 202221154A TW 109141122 A TW109141122 A TW 109141122A TW 109141122 A TW109141122 A TW 109141122A TW 202221154 A TW202221154 A TW 202221154A
Authority
TW
Taiwan
Prior art keywords
zinc oxide
palladium
nanocolumns
adsorbing
light source
Prior art date
Application number
TW109141122A
Other languages
Chinese (zh)
Other versions
TWI801776B (en
Inventor
楊勝州
朱彥霖
姬梁文
Original Assignee
國立聯合大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 國立聯合大學 filed Critical 國立聯合大學
Priority to TW109141122A priority Critical patent/TWI801776B/en
Publication of TW202221154A publication Critical patent/TW202221154A/en
Application granted granted Critical
Publication of TWI801776B publication Critical patent/TWI801776B/en

Links

Images

Landscapes

  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

The present invention reveals a producing method of Pd-adsorbed ZnO nanostructures comprising: preparing an ITO substrate which comprising a plurality of Zinc oxide (ZnO) nanostructures; using a photochemical reaction method to adsorb a number of palladium (Pd) nanoparticles on the surface of ZnO nanostructures. Compare to the traditional away, such as E-beam Evaporator system or Thermal Evaporation Deposition system, the present invention by using a photochemical reaction method not only achieves the effects with simplifying the producing steps, down costing the price, but also improves the development of the field emission.

Description

吸附鈀之氧化鋅奈米柱的製程方法Process method for adsorbing palladium-zinc oxide nanocolumns

一種用於場發射器之氧化鋅奈米柱,特別是一種吸附鈀之氧化鋅奈米柱及其光化學法A kind of zinc oxide nano-column for field emitter, especially a kind of zinc oxide nano-column for adsorbing palladium and photochemical method thereof

場發射的應用與現代生活中有密不可分的關係,包括用於人們的生活的平板顯示器以及用於醫學和研究領域的電子束顯微鏡等等,使得近年來場發射在顯示器和電子設備的應用得到廣泛的研究。現行的一場發射器的製成大多為在一銦錫氧化物基板長成複數個奈米結構(如奈米柱或是奈米管),然而,該場發射器的優缺點可以歸因於許多因素,包含該場發射器的奈米結構、奈米材質、導電率、功函數等等,因此如何提升該場發射器的質量與性能是現在場發射領域中最主要的目標。The application of field emission is closely related to modern life, including flat panel displays for people's lives and electron beam microscopes for medical and research fields, etc., which makes the application of field emission in displays and electronic equipment in recent years. Extensive research. The current field emitters are mostly fabricated by growing a plurality of nanostructures (such as nanopillars or nanotubes) on an indium tin oxide substrate. However, the advantages and disadvantages of the field emitters can be attributed to many Factors include the nanostructure, nanomaterial, conductivity, work function, etc. of the field emitter. Therefore, how to improve the quality and performance of the field emitter is the most important goal in the field emission field.

為提升該場發射器的質量與性能,金屬氧化物半導體(metal oxide semiconductor,MOS)常作為發展的目標,其中因氧化鋅在室溫下具備了1.寬能隙(3.37 eV)而有較佳等電性;2.高電子束縛能(60 meV)使其有優良的發光率及非線性光學係數特性;3.本身化學穩定性特性不具有毒性且材料便宜,使得氧化鋅成為場發射領域中相當熱門的奈米研究材料。In order to improve the quality and performance of the field emitter, metal oxide semiconductor (MOS) is often used as the target of development. Among them, zinc oxide has a 1. wide energy gap (3.37 eV) at room temperature, which is relatively high. Good isoelectricity; 2. High electron binding energy (60 meV) makes it have excellent luminescence and nonlinear optical coefficient characteristics; 3. Its chemical stability is not toxic and the material is cheap, making zinc oxide a field emission field A very popular nano research material in .

另外在金屬氧化物半導體與場發射器的研究領域中,更有在一金屬氧化物半導體中摻雜加一貴金屬奈米粒子(如白金、鈀、金及銀等等)進行氧化物半導體修飾,借此提高該場發射器的性能。然而現行技術中多半需利用電子束蒸鍍系統或是熱蒸鍍系統才可使得該金屬氧化物半導體表面濺渡有該貴金屬奈米粒子,不僅價格昂貴、步驟繁瑣,更不利於場發射領域的發展。In addition, in the research field of metal oxide semiconductors and field emitters, a metal oxide semiconductor is doped with a noble metal nanoparticle (such as platinum, palladium, gold and silver, etc.) for oxide semiconductor modification. Thereby the performance of the field emitter is improved. However, in the current technology, an electron beam evaporation system or a thermal evaporation system is mostly required to sputter the precious metal nanoparticles on the surface of the metal oxide semiconductor, which is not only expensive and complicated, but also unfavorable for the field emission field. develop.

為解決現行場發射領域中在提升該場發射器的質量與性能之技術領域之餘更可以降低製造成本、縮減製程步驟,本發明提供一種吸附鈀之氧化鋅奈米柱的製程方法,吸附鈀之氧化鋅奈米柱的製程方法其步驟包含:備置一銦錫氧化物基板,該銦錫氧化物基板上長有複數個氧化奈米柱;利用一光化學反應,使得複數個該氧化鋅奈米柱表面吸附有複數個鈀奈米粒子。In order to solve the technical field of improving the quality and performance of the field emitter in the current field emission field, the manufacturing cost and process steps can be reduced. The manufacturing method of the zinc oxide nano-columns comprises the following steps: preparing an indium tin oxide substrate on which a plurality of oxide nano-columns are grown; and utilizing a photochemical reaction to make a plurality of the zinc oxide nano-columns A plurality of palladium nanoparticles are adsorbed on the surface of the rice pillar.

其中,該光化學反應的步驟包含:將一氯化鈀水溶液滴至複數個該氧化鋅奈米柱上;以及將滴有該氯化鈀水溶液的複數個該氧化鋅奈米柱暴露於一紫外線光源。Wherein, the step of the photochemical reaction comprises: dropping an aqueous solution of palladium chloride onto a plurality of the zinc oxide nanopillars; and exposing the plurality of the zinc oxide nanopillars with the aqueous palladium chloride solution to an ultraviolet ray light source.

其中,利用一濺渡方法將一氧化鋅薄膜成形於該銦錫氧化物基板上,該濺渡方法包含一射頻磁控濺鍍系統。Wherein, a sputtering method is used to form a zinc oxide film on the indium tin oxide substrate, and the sputtering method includes a radio frequency magnetron sputtering system.

其中,該氧化鋅薄膜的厚度為25奈米(nm)- 100奈米(nm)之間。Wherein, the thickness of the zinc oxide film is between 25 nanometers (nm) and 100 nanometers (nm).

其中,利用一水熱法長成複數個該氧化鋅奈米柱,該熱水法的步驟包含:將該銦錫氧化物基板浸入以莫耳濃度比為1:1混和的六水合硝酸鋅和環六亞甲基四胺溶液中;以及於90℃的環境下反應6小時。Wherein, using a hydrothermal method to grow a plurality of the zinc oxide nano-columns, the steps of the hot water method include: immersing the indium tin oxide substrate in a mixture of zinc nitrate hexahydrate and a molar concentration ratio of 1:1. cyclohexamethylenetetramine solution; and react at 90°C for 6 hours.

其中,該氯化鈀水溶液的體積為500微升,該氯化鈀水溶液濃度為每升 1豪莫耳。Wherein, the volume of this palladium chloride aqueous solution is 500 microliters, and this palladium chloride aqueous solution concentration is 1 homole per liter.

其中,該紫外線光源波長為365奈米,該紫外線光源強度為0.496毫瓦,複數個該氧化鋅奈米柱暴露於該一紫外線光源的持續時間為480秒。Wherein, the wavelength of the ultraviolet light source is 365 nm, the intensity of the ultraviolet light source is 0.496 mW, and the duration of exposing the plurality of zinc oxide nanocolumns to the ultraviolet light source is 480 seconds.

進一步地,該銦錫氧化物基板於上鍍有一銀層作為接觸電極。Further, the indium tin oxide substrate is plated with a silver layer as a contact electrode.

相較於該該氧化鋅奈米柱,當給予該吸附鈀之氧化鋅奈米柱相同的一電場,該吸附鈀之氧化鋅奈米柱的場發射性能明顯的優於該氧化鋅奈米柱。Compared with the zinc oxide nanocolumns, when the same electric field is applied to the zinc oxide nanocolumns for adsorbing palladium, the field emission performance of the zinc oxide nanocolumns for adsorbing palladium is obviously better than that of the zinc oxide nanocolumns .

相較於傳統上需利用電子束蒸鍍系統或是熱蒸鍍系統才可使得該氧化鋅奈米柱表面濺渡有該鈀奈米粒子,本發明利用該光化學反應使該鈀離子自溶液中吸附於該氧化鋅奈米柱13表面不僅步驟簡單,價格便宜,更有利於場發射領域的發展。Compared with the traditional electron beam evaporation system or thermal evaporation system, the palladium nanoparticles can be sputtered on the surface of the zinc oxide nanocolumns, the present invention utilizes the photochemical reaction to make the palladium ions from the solution. The adsorption on the surface of the zinc oxide nanopillars 13 is not only simple in steps and cheap, but also beneficial to the development of the field emission field.

如圖1,其為本發明較佳實施例所提供的一種吸附鈀之氧化鋅奈米柱10的製程方法,其步驟含:1.備置以及清潔一銦錫氧化物基板11,該銦錫氧化物基板11底部為一玻璃板,該玻璃板上層鍍有一銦錫氧化物薄膜,利用丙酮(acetone)、甲醇(isopropyl alcohol)以及去離子水並且搭配超音波震盪器清洗該銦錫氧化物基板11。2.利用射頻磁控濺鍍系統(RF magnetron sputtering system),於真空的環境(4*10 -6Torr)下,將直徑為3-inch的氧化鋅奈米粒子濺渡於該銦錫氧化物基板11上層,形成一氧化鋅薄膜12,該氧化鋅薄膜12的厚度約為25奈米(nm)-100奈米(nm)之間。3.利用一水熱法(hydrothermal method)長成複數個氧化鋅奈米柱13。4.利用一光化學反應,使得複數個該氧化鋅奈米柱13 表面吸附有複數個鈀奈米粒子14。5.於真空的環境(6*10 -6Torr)下,該銦錫氧化物基板11於上鍍上一銀層15作為接觸電極,該銀層15的厚度約為100奈米(nm)。 As shown in FIG. 1, it is a process method for ZnO nanocolumns 10 for adsorbing palladium provided by a preferred embodiment of the present invention. The steps include: 1. preparing and cleaning an indium tin oxide substrate 11, the indium tin oxide The bottom of the object substrate 11 is a glass plate, the glass plate is coated with an indium tin oxide film, and the indium tin oxide substrate 11 is cleaned with acetone, methanol, deionized water and an ultrasonic oscillator. 2. Using a RF magnetron sputtering system, in a vacuum environment (4*10 -6 Torr), sputter 3-inch diameter zinc oxide nanoparticles on the indium tin oxide A zinc oxide film 12 is formed on the upper layer of the object substrate 11 , and the thickness of the zinc oxide film 12 is about 25 nanometers (nm) to 100 nanometers (nm). 3. Using a hydrothermal method to grow into a plurality of zinc oxide nanopillars 13. 4. Using a photochemical reaction, a plurality of palladium nanoparticles 14 are adsorbed on the surfaces of the plurality of zinc oxide nanopillars 13 5. In a vacuum environment (6*10 -6 Torr), the indium tin oxide substrate 11 is coated with a silver layer 15 as a contact electrode, and the thickness of the silver layer 15 is about 100 nanometers (nm) .

其中該熱水法的步驟及條件包含:1.將鍍有該氧化鋅層12的該銦錫氧化物基板11浸入以莫耳濃度比(molarity ratio)為1:1混和的六水合硝酸鋅(Zn(NO3)2_6H2O)和環六亞甲基四胺(hexamethylenetetramine,C6H12N4, HMTA)溶液中。2.於90℃的環境下反應6小時長成複數個該氧化鋅奈米柱13。The steps and conditions of the hot water method include: 1. immersing the indium tin oxide substrate 11 coated with the zinc oxide layer 12 in zinc nitrate hexahydrate ( Zn(NO3)2_6H2O) and hexamethylenetetramine (hexamethylenetetramine, C6H12N4, HMTA) solution. 2. A plurality of zinc oxide nanopillars 13 are grown into a plurality of zinc oxide nanopillars by reacting at 90° C. for 6 hours.

其中該光化學反應的步驟及條件包含:1.將500微升(μL)的一氯化鈀(PdCl2)水溶液20滴至複數個該氧化鋅奈米柱13上,該氯化鈀水溶液較佳的濃度為每升 1豪莫耳(1 mM)。2.將滴有該氯化鈀水溶液20的複數個該氧化鋅奈米柱13暴露於一紫外線光源30,本實施例中,該紫外線光源30波長為365奈米(nm)且強度為0.496毫瓦(mW),複數個該氧化鋅奈米柱13暴露於該一紫外線光源30的持續時間為480秒。當該氧化鋅奈米柱13與該氯化鈀水溶液20反應時該氯化鈀水溶液20中的複數個鈀離子(Pd 2+)會與該氧化鋅奈米柱13的複數個氧原子反應,並且吸附於該氧化鋅奈米柱13的表面,透過該紫外線光源30的照射,複數個該鈀離子經由光化學反應還原成複數個該鈀奈米粒子14,並且複數個該鈀奈米粒子14成形於複數個該氧化鋅奈米柱13表面。 Wherein the steps and conditions of this photochemical reaction include: 1. 500 microliters (μL) of palladium monochloride (PdCl ) aqueous solution 20 is dropped onto a plurality of the zinc oxide nanopillars 13, the palladium chloride aqueous solution is preferably The concentration is 1 hamol (1 mM) per liter. 2. Expose a plurality of this zinc oxide nano-columns 13 with this palladium chloride aqueous solution 20 to an ultraviolet light source 30, in this embodiment, the wavelength of this ultraviolet light source 30 is 365 nanometers (nm) and the intensity is 0.496 millimetres Watts (mW), the duration of exposing the plurality of the zinc oxide nanocolumns 13 to the one ultraviolet light source 30 is 480 seconds. When the zinc oxide nano-columns 13 react with the palladium chloride aqueous solution 20, a plurality of palladium ions (Pd 2+ ) in the palladium chloride aqueous solution 20 will react with a plurality of oxygen atoms of the zinc oxide nano-columns 13, And adsorbed on the surface of the zinc oxide nano-columns 13, through the irradiation of the ultraviolet light source 30, a plurality of the palladium ions are reduced to a plurality of the palladium nanoparticles 14 through a photochemical reaction, and the plurality of the palladium nanoparticles 14 are formed on the surfaces of the plurality of zinc oxide nanopillars 13 .

相較於傳統上需利用電子束蒸鍍系統或是熱蒸鍍系統才可使得該氧化鋅奈米柱13表面濺渡有該鈀奈米粒子14,本發明利用該光化學反應使該鈀離子自溶液中吸附於該氧化鋅奈米柱13表面不僅步驟簡單,價格便宜,更有利於場發射領域的發展。Compared with the traditional electron beam evaporation system or thermal evaporation system, the palladium nano-particles 14 can be sputtered on the surface of the zinc oxide nano-columns 13. The present invention uses the photochemical reaction to make the palladium ions. Adsorption on the surface of the zinc oxide nano-pillars 13 from solution is not only simple in steps and cheap, but also beneficial to the development of the field emission field.

本發明後續將進一步的比較複數個該氧化鋅奈米柱13與複數個該吸附鈀之氧化鋅奈米柱10的差異。圖2所示為本發明較佳實施例電顯圖,拍攝複數個該氧化鋅奈米柱13與複數個該吸附鈀之氧化鋅奈米柱10長成後的型態。左排(a)、(b) 分別為複數個該氧化鋅奈米柱13與複數個該吸附鈀之氧化鋅奈米柱10俯視圖;右排(c) 、 (d)則分別為複數個該氧化鋅奈米柱13與複數個該吸附鈀之氧化鋅奈米柱10側視圖。經測量後,複數個該氧化鋅奈米柱13以及複數個該吸附鈀之氧化鋅奈米柱10平均直徑分別約為83和86奈米(nm),而平均長度分別約2.11和2.14微米(µm)。由俯視圖(a)及(b)中皆可看出,複數個該氧化鋅奈米柱13以及複數個該吸附鈀之氧化鋅奈米柱10為一六角結構柱狀體。其中,由(b)圖中右上角放大圖(e)可以觀察出該吸附鈀之氧化鋅奈米柱10之表面略微粗糙,可以得知有複數個該鈀奈米粒子14吸附於複數個該吸附鈀之氧化鋅奈米柱10表面。The present invention will further compare the differences between the plurality of zinc oxide nanocolumns 13 and the plurality of zinc oxide nanocolumns 10 for adsorbing palladium. FIG. 2 is an electrophotographic diagram of a preferred embodiment of the present invention, which is a photograph of a plurality of the zinc oxide nano-columns 13 and a plurality of the palladium-adsorbing zinc oxide nano-columns 10 after growth. The left rows (a) and (b) are respectively a top view of a plurality of the zinc oxide nanocolumns 13 and a plurality of the palladium-adsorbing zinc oxide nanocolumns 10; the right rows (c) and (d) are respectively a plurality of the A side view of the zinc oxide nanocolumns 13 and a plurality of the zinc oxide nanocolumns 10 for adsorbing palladium. After measurement, the average diameters of the plurality of zinc oxide nano-columns 13 and the plurality of the palladium-adsorbed zinc oxide nano-columns 10 are about 83 and 86 nanometers (nm), respectively, and the average lengths are about 2.11 and 2.14 microns ( µm). It can be seen from the top views (a) and (b) that the plurality of the zinc oxide nano-columns 13 and the plurality of the palladium-adsorbing zinc oxide nano-columns 10 are columns of a hexagonal structure. Among them, from the enlarged view (e) of the upper right corner of the figure (b), it can be observed that the surface of the zinc oxide nanocolumns 10 adsorbing palladium is slightly rough, and it can be known that there are a plurality of the palladium nanoparticles 14 adsorbed on a plurality of the The surface of the zinc oxide nanocolumns 10 for adsorbing palladium.

圖3為本發明較佳實施例X光繞射儀分析圖,X光繞射儀用於偵測晶體材料的特性,包含結構,相位以及晶體取向等等結構參數的分析。X光繞射峰質是由從每組樣品的晶格面在特定角度繞射的單色光建設性干涉產生的,峰值的強度由晶格內原子的分布來決定。配合比對粉末衍射標準聯合委員會(Joint Committee on Powder Diffraction Standards,JCPDS)資料庫中卡號36-1451可看出,氧化鋅是非均向成長的六角纖鋅礦結構,明顯的(002)峰值可以表明複數個該氧化鋅奈米柱13以及複數個該吸附鈀之氧化鋅奈米柱10優先以c軸方向快速生長,沒有發現其他衍射峰,則可表明沒有雜質存在。3 is an analysis diagram of an X-ray diffractometer according to a preferred embodiment of the present invention. The X-ray diffractometer is used to detect the characteristics of crystal materials, including analysis of structural parameters such as structure, phase and crystal orientation. The X-ray diffraction peak quality is produced by the constructive interference of monochromatic light diffracted at specific angles from the lattice planes of each set of samples, and the intensity of the peak is determined by the distribution of atoms within the lattice. It can be seen from the card number 36-1451 in the Joint Committee on Powder Diffraction Standards (JCPDS) database that zinc oxide is a heterogeneously grown hexagonal wurtzite structure, and the obvious (002) peak can indicate that The plurality of the zinc oxide nano-columns 13 and the plurality of the palladium-adsorbing zinc oxide nano-columns 10 preferentially grow rapidly in the c-axis direction, and no other diffraction peaks are found, which indicates that no impurities exist.

圖4為本發明較佳實施例光致螢光發光譜儀分析圖,由圖中可看出有一主要峰值,該主要峰值落在380nm,其中,380nm的峰值可以對應為該氧化鋅奈米柱13以及該吸附鈀之氧化鋅奈米柱10氧化鋅的近帶隙發射(near-band edge emission)以及自由激子重組(free excitionic recombination)能力,其中,該吸附鈀之氧化鋅奈米柱10向對於該氧化鋅奈米柱13具有較低的峰值強度,這可能是由於光激發電子以在導帶中從氧化鋅移動到該鈀奈米粒子,從而導致氧化鋅中的電子 -空穴複合減少,而光感應電子和空穴的分離相增加,並導致的光致發光強度降低。4 is an analysis diagram of a photoluminescence spectrometer according to a preferred embodiment of the present invention. It can be seen from the figure that there is a main peak, and the main peak falls at 380 nm, wherein the peak at 380 nm can correspond to the zinc oxide nanocolumn 13 And the near-band edge emission (near-band edge emission) and the free excitonic recombination of the zinc oxide nanocolumns 10 adsorbing palladium, wherein the zinc oxide nanocolumns 10 adsorbing palladium are directed toward The lower peak intensity for the ZnO nanopillars 13 may be due to photo-excited electrons to move from ZnO to the palladium nanoparticles in the conduction band, resulting in reduced electron-hole recombination in ZnO , while the separated phase of photoinduced electrons and holes increases, and the resulting photoluminescence intensity decreases.

圖5為本發明較佳實施例場發射結果圖,由圖所示當電流密度為10 −5安培/公分 2(A/cm 2)時,該氧化鋅奈米柱13的開啟電場值為 6.68伏特/微米(V/μm ),然而該吸附鈀之氧化鋅奈米柱10的開啟電場值下降為 6.43伏特/微米( V/μm ),這是因為該吸附鈀之氧化鋅奈米柱10提供了更多的載子,使得電子更容易穿隧。根據穿隧電流F-N公式可得知 turn-on電場強度下降則場增強因子(β)值會上升,而增強因子通常可作為判斷元件好壞的依據,因此由數據可得知有該吸附鈀之氧化鋅奈米柱10更適合作為一個場發射元件。 FIG. 5 is a field emission result diagram of a preferred embodiment of the present invention. As shown in the figure, when the current density is 10 −5 ampere/cm 2 (A/cm 2 ), the open electric field value of the zinc oxide nanocolumns 13 is 6.68 volt/micrometer (V/μm), however, the turn-on electric field value of the palladium-adsorbed zinc oxide nanopillars 10 drops to 6.43 volts/micron (V/μm), because the palladium-adsorbed zinc oxide nanopillars 10 provide more carriers, making it easier for electrons to tunnel. According to the tunneling current FN formula, it can be known that the field enhancement factor (β) value will increase when the turn-on electric field strength decreases, and the enhancement factor can usually be used as the basis for judging the quality of the element. Therefore, it can be known from the data that the adsorption of palladium The zinc oxide nanopillar 10 is more suitable as a field emission element.

圖6為本發明較佳實施例場發射斜率圖,根據穿隧電流 F-N公式進一步的得到一ln(J/E 2)和 1/E的場發射斜率圖,該氧化鋅奈米柱13和該吸附鈀之氧化鋅奈米柱10場發射的斜率分別為31.48和14.01,當給予氧化鋅材質一5.3電子伏特(electron volt,eV),該氧化鋅奈米柱13和該吸附鈀之氧化鋅奈米柱10場發射的增強因子(β)值分別為2546.69以及5947.07,由結果可知該吸附鈀之氧化鋅奈米柱10明顯的提高了增強因子(β)值,表現了更佳的場發射性能。 FIG. 6 is a field emission slope diagram of a preferred embodiment of the present invention. According to the tunneling current FN formula, a field emission slope diagram of ln(J/E 2 ) and 1/E is further obtained. The zinc oxide nanopillars 13 and the The field emission slopes of the ZnO nanocolumns 10 adsorbing palladium are 31.48 and 14.01, respectively. When a 5.3 electron volt (eV) is given to the ZnO material, the ZnO nanocolumns 13 and the ZnO nanocolumns adsorbing palladium are The field emission enhancement factor (β) values of Mi-pillar 10 are 2546.69 and 5947.07, respectively. From the results, it can be seen that the ZnO nanopillars 10 adsorbing palladium significantly increase the enhancement factor (β) value and show better field emission performance. .

如圖7所示其為本發明較佳實施例外加電場測量場發射能帶示意圖,如圖7(a),為該氧化鋅奈米柱13的場發射能帶示意圖,當給予該氧化鋅奈米柱13施加一電場後,當電子e -從一價帶(valance band)獲得能量而跳躍過一能隙(Eg)至傳導帶(conduction band)時,該氧化鋅奈米柱13的該傳導帶(conduction band)彎曲至費米能階(Fermi level),產生一量子井(quantum well),使得電子e -可以儲存至該量子井(quantum well)中並且隧穿到真空能級(vacuum level)產生一電流。然而,如圖7(a)所示,當給予該吸附鈀之氧化鋅奈米柱10相同的一電場,該吸附鈀之氧化鋅奈米柱10的場發射性能明顯的優於該氧化鋅奈米柱13,其原因可以歸納如下: 1.由於貴金屬鈀可以吸附較多的電子e -,增強整體導電性。 2.該吸附鈀之氧化鋅奈米柱10的異質結構,進一步的增加該量子井(quantum well)的儲存能力,使得較多的電子e -可大量聚集於該量子井(quantum well)中,隧穿到真空能級(vacuum level)的電子e -數量增加,電流的傳遞相對提昇。 As shown in FIG. 7 , it is a schematic diagram of the field emission energy band measured by an applied electric field in a preferred embodiment of the present invention. FIG. 7( a ) is a schematic diagram of the field emission energy band of the zinc oxide nanocolumn 13 . After an electric field is applied to the nanopillars 13, when the electron e- gains energy from a valence band and jumps across an energy gap (Eg) to the conduction band, the conduction of the zinc oxide nanopillars 13 The conduction band is bent to the Fermi level, creating a quantum well in which electrons e- can be stored and tunneled to the vacuum level ) produces a current. However, as shown in FIG. 7( a ), when the same electric field is applied to the ZnO nanocolumns 10 adsorbing palladium, the field emission performance of the ZnO nanocolumns 10 adsorbing palladium is significantly better than that of the ZnO nanocolumns M column 13, the reasons can be summarized as follows: 1. Since the noble metal palladium can adsorb more electrons e - , the overall conductivity is enhanced. 2. The heterostructure of the zinc oxide nanocolumns 10 for adsorbing palladium further increases the storage capacity of the quantum well, so that more electrons e- can be gathered in the quantum well in large quantities, The number of electrons e- that tunnels to the vacuum level increases, and the transfer of current is relatively improved.

10:吸附鈀之氧化鋅奈米柱 11:銦錫氧化物基板 12:氧化鋅薄膜 13:氧化鋅奈米柱 14:鈀奈米粒子 15:銀層 20:氯化鈀水溶液 30:紫外線光源 e: -電子 10: ZnO nanopillars adsorbing palladium 11: Indium tin oxide substrate 12: Zinc oxide film 13: ZnO nanopillars 14: Palladium nanoparticles 15: Silver layer 20: Palladium chloride aqueous solution 30: Ultraviolet light source e : -Electronics

圖1為本發明較佳實施例步驟圖 圖2為本發明較佳實施例電顯圖 圖3為本發明較佳實施例X光繞射儀分析圖 圖4為本發明較佳實施例光致螢光發光譜儀分析圖 圖5為本發明較佳實施例場發射結果圖 圖6為本發明較佳實施例場發射斜率圖 圖7為本發明較佳實施例外加電場測量場發射能帶示意圖 Fig. 1 is a step diagram of a preferred embodiment of the present invention Fig. 2 is the electrograph of the preferred embodiment of the present invention Fig. 3 is the X-ray diffractometer analysis diagram of the preferred embodiment of the present invention FIG. 4 is an analysis diagram of a photoluminescence spectrometer according to a preferred embodiment of the present invention. FIG. 5 is a diagram of the field emission result of the preferred embodiment of the present invention FIG. 6 is a field emission slope diagram of a preferred embodiment of the present invention FIG. 7 is a schematic diagram of measuring the field emission energy band with an applied electric field according to a preferred embodiment of the present invention.

10:吸附鈀之氧化鋅奈米柱 10: ZnO nanocolumns for adsorption of palladium

11:銦錫氧化物基板 11: Indium Tin Oxide Substrate

12:氧化鋅薄膜 12: Zinc oxide film

13:氧化鋅奈米柱 13: Zinc oxide nanopillars

14:鈀奈米粒子 14: Palladium Nanoparticles

15:銀層 15: Silver Layer

20:氯化鈀水溶液 20: palladium chloride aqueous solution

30:紫外線光源 30: UV light source

Claims (9)

一種吸附鈀之氧化鋅奈米柱的製程方法,其步驟包含: 備置一銦錫氧化物基板,該銦錫氧化物基板上長有複數個氧化奈米柱;以及 利用一光化學反應,使得複數個該氧化鋅奈米柱表面吸附有複數個鈀奈米粒子,該光化學反應的步驟包含: 將一氯化鈀水溶液滴至複數個該氧化鋅奈米柱上;以及 將滴有該氯化鈀水溶液的複數個該氧化鋅奈米柱暴露於一紫外線光源。 A process method for adsorbing palladium zinc oxide nano-pillars, the steps comprising: preparing an indium tin oxide substrate with a plurality of oxide nano-pillars growing on the indium tin oxide substrate; and Utilize a photochemical reaction to make a plurality of palladium nanoparticles adsorbed on the surfaces of the plurality of zinc oxide nanopillars, and the steps of the photochemical reaction include: dropping an aqueous solution of palladium monochloride onto a plurality of the zinc oxide nanopillars; and A plurality of the zinc oxide nanocolumns with the aqueous palladium chloride solution dripped thereon are exposed to an ultraviolet light source. 如請求項1所述之吸附鈀之氧化鋅奈米柱的製程方法,利用一濺渡方法將一氧化鋅薄膜成形於該銦錫氧化物基板上,該濺渡方法包含一射頻磁控濺鍍系統。As claimed in claim 1, for the method for manufacturing ZnO nanocolumns for adsorbing palladium, a ZnO film is formed on the indium tin oxide substrate by a sputtering method, and the sputtering method includes a radio frequency magnetron sputtering. system. 如請求項1或2所述之吸附鈀之氧化鋅奈米柱的製程方法,該氧化鋅薄膜的厚度為25奈米(nm)- 100奈米(nm)之間。According to the manufacturing method of the zinc oxide nanocolumns for adsorbing palladium according to claim 1 or 2, the thickness of the zinc oxide film is between 25 nanometers (nm) and 100 nanometers (nm). 如請求項1或2所述之吸附鈀之氧化鋅奈米柱的製程方法,利用一水熱法長成複數個該氧化鋅奈米柱,該熱水法的步驟包含: 將該銦錫氧化物基板浸入以莫耳濃度比為1:1混和的六水合硝酸鋅和環六亞甲基四胺溶液中;以及 於90℃的環境下反應6小時。 As claimed in claim 1 or 2, the process method for absorbing palladium zinc oxide nanocolumns utilizes a hydrothermal method to grow a plurality of the zinc oxide nanocolumns, and the steps of the hydrothermal method comprise: immersing the indium tin oxide substrate in a solution of zinc nitrate hexahydrate and cyclohexamethylenetetramine mixed in a molar concentration ratio of 1:1; and The reaction was carried out at 90°C for 6 hours. 如請求項1或2所述之吸附鈀之氧化鋅奈米柱的製程方法,該氯化鈀水溶液的體積為500微升,該氯化鈀水溶液濃度為每升 1豪莫耳。As claimed in claim 1 or 2, the process method of the zinc oxide nanocolumn for adsorbing palladium, the volume of the palladium chloride aqueous solution is 500 microliters, and the concentration of the palladium chloride aqueous solution is 1 homole per liter. 如請求項1或2所述之吸附鈀之氧化鋅奈米柱的製程方法,該紫外線光源波長為365奈米,該紫外線光源強度為0.496毫瓦,複數個該氧化鋅奈米柱暴露於該一紫外線光源的持續時間為480秒。As claimed in claim 1 or 2, the method for manufacturing ZnO nanocolumns for adsorbing palladium, the wavelength of the ultraviolet light source is 365 nm, the intensity of the ultraviolet light source is 0.496 mW, and a plurality of the zinc oxide nanocolumns are exposed to the The duration of a UV light source was 480 seconds. 如請求項5所述之吸附鈀之氧化鋅奈米柱的製程方法,該紫外線光源波長為365奈米,該紫外線光源強度為0.496毫瓦,複數個該氧化鋅奈米柱暴露於該一紫外線光源的持續時間為480秒。The method for manufacturing ZnO nanocolumns for adsorbing palladium according to claim 5, the wavelength of the ultraviolet light source is 365 nm, the intensity of the ultraviolet light source is 0.496 mW, and a plurality of the zinc oxide nanocolumns are exposed to the one ultraviolet light The duration of the light source is 480 seconds. 如請求項1或2所述之吸附鈀之氧化鋅奈米柱的製程方法,該銦錫氧化物基板於上鍍有一銀層作為接觸電極。As claimed in claim 1 or 2, for the manufacturing method of palladium-adsorbing zinc oxide nanopillars, the indium tin oxide substrate is coated with a silver layer as a contact electrode. 如請求項7所述之吸附鈀之氧化鋅奈米柱的製程方法,該銦錫氧化物基板於上鍍有一銀層作為接觸電極。According to the manufacturing method of the zinc oxide nano-columns for adsorbing palladium as described in claim 7, the indium tin oxide substrate is coated with a silver layer as a contact electrode.
TW109141122A 2020-11-24 2020-11-24 Producing method of pd-adsorbed zno nanostructures TWI801776B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW109141122A TWI801776B (en) 2020-11-24 2020-11-24 Producing method of pd-adsorbed zno nanostructures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW109141122A TWI801776B (en) 2020-11-24 2020-11-24 Producing method of pd-adsorbed zno nanostructures

Publications (2)

Publication Number Publication Date
TW202221154A true TW202221154A (en) 2022-06-01
TWI801776B TWI801776B (en) 2023-05-11

Family

ID=83062436

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109141122A TWI801776B (en) 2020-11-24 2020-11-24 Producing method of pd-adsorbed zno nanostructures

Country Status (1)

Country Link
TW (1) TWI801776B (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189012A1 (en) * 2002-10-30 2005-09-01 Canon Kabushiki Kaisha Zinc oxide film, photovoltaic device making use of the same, and zinc oxide film formation process
CN101591001B (en) * 2009-06-29 2011-08-31 西北有色金属研究院 Method for preparing Pd doped TiO2 nanotube array composite material
DE102016013279A1 (en) * 2016-11-08 2018-05-09 H&P Advanced Technology GmbH Process for producing an electron emitter with a coating containing carbon nanotubes
CN110040762B (en) * 2019-05-30 2021-05-07 陕西师范大学 Method for regulating and controlling growth of zinc oxide nanorod array based on two-dimensional colloid single-layer film

Also Published As

Publication number Publication date
TWI801776B (en) 2023-05-11

Similar Documents

Publication Publication Date Title
Subha et al. Enhanced room temperature gas sensing properties of low temperature solution processed ZnO/CuO heterojunction
Dutta et al. Nucleation and growth of lead sulfide nano-and microcrystallites in supramolecular polymer assemblies
Yang et al. Formation process of CdS nanorods via solvothermal route
Kwoka et al. Novel insight on the local surface properties of ZnO nanowires
Huang et al. Core–shell structure of zinc oxide/indium oxide nanorod based hydrogen sensors
Lu et al. In situ growth of CuS thin films on functionalized self-assembled monolayers using chemical bath deposition
Chu et al. Characteristics of gas sensors based on Co-doped ZnO nanorod arrays
Md Sin et al. Fabrication of nanocubic ZnO/SnO 2 film-based humidity sensor with high sensitivity by ultrasonic-assisted solution growth method at different Zn: Sn precursor ratios
Ghanbari Shohany et al. Investigation of ZnO thin-film sensing properties for CO 2 detection: effect of Mn doping
Huang et al. A facile synthesis of ZnO nanotubes and their hydrogen sensing properties
Shankar et al. Racetrack Effect on the Dissimilar Sensing Response of ZnO Thin Film An Anisotropy of Isotropy
Zhai et al. Morphology evolutions and optical properties of Cu2O films by an electrochemical deposition on flexible substrate
Zhang et al. A facile self-assembly synthesis of hexagonal ZnO nanosheet films and their photoelectrochemical properties
Wang et al. Synthesis of tower-like ZnO structures and visible photoluminescence origins of varied-shaped ZnO nanostructures
Su et al. The surface-plasmon-resonance and band bending effects on the photoluminescence enhancement of Ag-decorated ZnO nanorods
Zhai et al. Manipulation of the morphology of ZnSe sub-micron structures using CdSe nanocrystals as the seeds
Chen et al. Field-emission and photoelectrical characteristics of ZnO nanorods photodetectors prepared on flexible substrate
Hafeez et al. Oxygen vacancy driven modulations in In2O3 pyramidal beaded nanowires
Orhan et al. Characterization of size-controlled ZnO nanorods produced by electrochemical deposition technique
Renitta et al. High performance hydrogen sensor based on Mn implanted ZnO nanowires array fabricated on ITO substrate
US11004990B2 (en) Nanometer sized structures grown by pulsed laser deposition
Gorup et al. Methods for design and fabrication of nanosensors: the case of ZnO-based nanosensor
Maiti et al. Three dimensional ZnO nanostructures realized through a polymer mediated aqueous chemical route: Candidate for transparent flexible electronics
Lu et al. Fabrication and field-emission performance of zinc sulfide nanobelt arrays
Dhanasekaran et al. SEM and AFM studies of dip‐coated CuO nanofilms