TWI801661B - Wafer cutting method and wafer dividing method - Google Patents
Wafer cutting method and wafer dividing method Download PDFInfo
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- TWI801661B TWI801661B TW108132720A TW108132720A TWI801661B TW I801661 B TWI801661 B TW I801661B TW 108132720 A TW108132720 A TW 108132720A TW 108132720 A TW108132720 A TW 108132720A TW I801661 B TWI801661 B TW I801661B
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- 238000005520 cutting process Methods 0.000 title claims description 86
- 238000000034 method Methods 0.000 title claims description 55
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 224
- 238000003860 storage Methods 0.000 claims abstract description 46
- 238000002347 injection Methods 0.000 claims description 37
- 239000007924 injection Substances 0.000 claims description 37
- 239000007921 spray Substances 0.000 claims description 13
- 230000001902 propagating effect Effects 0.000 claims description 2
- 230000003313 weakening effect Effects 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 143
- 238000005406 washing Methods 0.000 description 32
- 238000004140 cleaning Methods 0.000 description 25
- 230000005855 radiation Effects 0.000 description 18
- 238000001179 sorption measurement Methods 0.000 description 9
- 238000007654 immersion Methods 0.000 description 6
- 238000005507 spraying Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B17/00—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups
- B05B17/04—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods
- B05B17/06—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations
- B05B17/0607—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers
- B05B17/0623—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers coupled with a vibrating horn
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B17/00—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups
- B05B17/04—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods
- B05B17/06—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations
- B05B17/0607—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers
- B05B17/0638—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers spray being produced by discharging the liquid or other fluent material through a plate comprising a plurality of orifices
- B05B17/0646—Vibrating plates, i.e. plates being directly subjected to the vibrations, e.g. having a piezoelectric transducer attached thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0288—Ultra or megasonic jets
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Dicing (AREA)
- Special Spraying Apparatus (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
抑制超音波振動減弱。 Suppresses the weakening of ultrasonic vibrations.
在壓電振動板(24)中,在接受高頻電壓進行振動而產生超音波振動的圓頂部之周圍設置鍔部,鍔部被支持於儲水部(19)之側壁。因此,因圓頂部不直接與儲水部(19)接觸,故圓頂部難藉由儲水部(19)被壓迫。因此,圓頂部成為容易振動。並且,比起圓頂部直接性地與儲水部(19)接觸的構成,圓頂部之振動難傳遞至儲水部(19)。因此,可以抑制圓頂部之振動減弱之情形。其結果,可以抑制藉由圓頂部產生的超音波振動減弱之情形。 In the piezoelectric vibrating plate (24), a collar is provided around a dome that receives high-frequency voltage and vibrates to generate ultrasonic vibrations, and the collar is supported by the side wall of the water storage part (19). Therefore, since the dome is not in direct contact with the water storage (19), it is difficult for the dome to be compressed by the water storage (19). Therefore, the dome becomes easy to vibrate. In addition, compared with the structure in which the dome directly contacts the water storage part (19), the vibration of the dome part is less likely to be transmitted to the water storage part (19). Therefore, it is possible to suppress the weakening of the vibration of the dome. As a result, it is possible to suppress the weakening of the ultrasonic vibration generated by the dome.
Description
本發明係關於晶圓之切削方法及晶圓之分割方法。 The present invention relates to a wafer cutting method and a wafer dividing method.
洗淨裝置係藉由從洗淨噴嘴猛烈地對晶圓噴射洗淨水來洗淨晶圓。在專利文獻1及2記載的技術中,為了提升洗淨力,使用使超音波振動傳播的洗淨水,將超音波振動傳遞至附著於晶圓上的灰塵,從晶圓除去灰塵。
The cleaning device cleans the wafer by violently spraying cleaning water from the cleaning nozzle to the wafer. In the techniques described in
以往之超音波洗淨噴嘴具有例如供給洗淨水之供給口、儲存洗淨水的儲水部、被設置在儲水部之前端的噴射口,及平板形狀之超音波振動件。儲水部具有暫時性地儲存從供給口被供給之洗淨水的容積。儲水部被形成朝向噴射口漸尖的形狀。噴射口係從儲水部之前端噴射洗淨水。超音波振動件與噴射口相向而被配設在儲水部內。 A conventional ultrasonic cleaning nozzle has, for example, a supply port for supplying washing water, a water storage part for storing washing water, a spray port provided at the front end of the water storage part, and a flat-plate ultrasonic vibrating element. The water storage unit has a volume for temporarily storing the washing water supplied from the supply port. The water storage portion is formed into a shape that tapers toward the injection port. The spray port sprays the washing water from the front end of the water storage part. The ultrasonic vibrating element is arranged in the water storage part to face the ejection port.
[專利文獻1]日本特開2003-340330號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2003-340330
[專利文獻2]日本特開平10-151422號公報 [Patent Document 2] Japanese Patent Application Laid-Open No. 10-151422
從平板形狀之超音波振動件被傳遞至儲水部之水的超音波振動在儲水部之內壁反射。因此,有反射的超音波振動和從超音波振動件被振盪的超音波振動互相抵銷之情形。在此情況,有藉由洗淨水被傳播的超音波振動減弱,洗淨力下降之問題。 The ultrasonic vibration of the water transmitted from the flat-plate-shaped ultrasonic vibrating element to the water storage part is reflected on the inner wall of the water storage part. Therefore, there are cases where the reflected ultrasonic vibration and the ultrasonic vibration oscillated from the ultrasonic vibrating member cancel each other out. In this case, there is a problem in that the ultrasonic vibration propagated by the washing water is weakened, and the washing power is reduced.
本發明之目的在於抑制超音波振動減弱之情形。 The purpose of the present invention is to suppress the weakening of ultrasonic vibrations.
本發明之壓電振動板(本壓電振動板)具有圓頂部,和從該圓頂部之外周朝徑向外側突出的鍔部。 The piezoelectric vibrating plate of the present invention (the present piezoelectric vibrating plate) has a dome portion, and a flange portion protruding radially outward from the outer periphery of the dome portion.
本發明之晶圓之切削方法,其使用超音波水噴射裝置(本超音波水噴射裝置),本超音波水噴射裝置係噴射使超音波振動傳播至被加工物的水,本超音波水噴射裝置具備:筒狀之儲水部,其係暫時性地儲存從水供給源被供給的水;噴射口,其係被配設在該儲水部之一方之端側,噴射水;及壓電振動板,其係與該噴射口相向而被配設在該儲水部,產生超音波振動,該壓電振動板,具有:圓頂部;和鍔部,其係從該圓頂部之外周朝向徑向外側突出,在該超音波水噴射裝置中,該壓電振動板之該圓頂部 之凹陷側朝向該噴射口,該壓電振動板之鍔部藉由該儲水部之側壁被支持,該超音波振動朝向該噴射口集中,作為使該超音波振動傳播之水的超音波水從該噴射口被噴射至該被加工物,該晶圓之切削方法包含:以挾盤載置台保持作為該被加工物之晶圓的工程;和將切削刀切削刀之刀尖配置在因應該晶圓之切入深度的位置,而使該挾盤載置台相對於旋轉的該切削刀做相對性移動,沿著分割預定線而在該晶圓形成切削溝的工程;和該切削溝之形成的工程包含從超音波水噴射裝置對作為該切削刀切入至該晶圓之位置的切削點噴射該超音波水的工程。 The wafer cutting method of the present invention uses an ultrasonic water jetting device (this ultrasonic water jetting device). The device includes: a cylindrical water storage part temporarily storing water supplied from a water supply source; a jetting port arranged at one end of the water storage part to spray water; and a piezoelectric The vibrating plate is arranged on the water storage part facing the injection port to generate ultrasonic vibration. The piezoelectric vibrating plate has: a domed top; protruding outward, in the ultrasonic water jet device, the dome of the piezoelectric vibrating plate The concave side of the piezoelectric vibrating plate is supported by the side wall of the water storage part toward the injection port, the ultrasonic vibration is concentrated toward the injection port, and the supersonic water is used as the water for propagating the ultrasonic vibration. The wafer is sprayed from the injection port to the workpiece, and the cutting method of the wafer includes: a process of holding the wafer as the workpiece with a clamping table; and disposing the tip of the cutting blade on the corresponding The position of the cutting depth of the wafer, so that the clamping table is relatively moved relative to the rotating cutting knife, and the process of forming a cutting groove on the wafer along the predetermined dividing line; and the formation of the cutting groove The process includes spraying the ultrasonic water from an ultrasonic water jetting device to a cutting point where the cutter enters the wafer.
即使本壓電振動板進一步具有以包圍該圓頂部之方式被設置在該鍔部的溝部亦可。 The present piezoelectric vibrating plate may further include a groove provided on the flange portion so as to surround the domed portion.
本發明之晶圓之分割方法,其使用超音波喇叭(本超音波喇叭),本超音波喇叭係使超音波振動集中施加,本超音波喇叭具備:振動件,其係包含本壓電振動板,該壓電振動板具有圓頂部;和鍔部,其係從該圓頂部之外周朝向徑向外側突出,且該振動件具有以欲使該超音波振動集中之一點為中心使該一點側凹陷而形成圓頂狀的輻射面;及殼體,其係保持該壓電振動板之該鍔部,晶圓之分割方法包含:將在內部形成沿著分割預定線的改質層的晶圓,固定在水槽內之載置台之工程;使被保持於該水槽內之該載置台的該晶圓浸沒的工程;和沿著浸沒的該晶圓之該分割預定線移動該超音波喇叭,藉由從該超音波喇叭對該分割預定線施加超音波振動,而以改質層為起點分 割晶圓的工程。 The wafer splitting method of the present invention uses an ultrasonic horn (this ultrasonic horn). The ultrasonic horn is used to apply ultrasonic vibrations intensively. The ultrasonic horn is equipped with: a vibrating element, which includes the piezoelectric vibrating plate , the piezoelectric vibrating plate has a domed top; and a collar portion, which protrudes from the outer circumference of the dome toward the radially outward, and the vibrating member has a point that is intended to concentrate the ultrasonic vibration as a center to make the one point side concave forming a dome-shaped radiating surface; and a housing that holds the collar portion of the piezoelectric vibrating plate. The method for dividing the wafer includes: forming a modified layer inside the wafer along the planned division line, The process of fixing the mounting table in the water tank; the process of submerging the wafer held in the mounting table in the water tank; and moving the ultrasonic horn along the dividing line of the immersed wafer, by Ultrasonic vibration is applied to the planned dividing line from the ultrasonic horn, and the modified layer is used as the starting point to divide The project of cutting wafers.
即使本壓電振動板進一步具有以包圍該圓頂部之方式被設置在該鍔部的溝部亦可。 The present piezoelectric vibrating plate may further include a groove provided on the flange portion so as to surround the domed portion.
本壓電振動板之圓頂部藉由例如振動產生超音波振動。而且,本壓電振動板可以經由被設置在該圓頂部之周圍的鍔部而被保持。因此,可以抑制用以保持本壓電振動板之保持構件,例如在本超音波水噴射裝置中之儲水部之側壁及本超音波喇叭之殼體直接性地與圓頂部相接。其結果,因圓頂部難以藉由保持構件被壓迫,圓頂部容易振動。並且,因比起圓頂部直接性地與保持構件接觸之構成,圓頂部之振動難以傳遞至保持構件,故可以抑制圓頂部之振動減弱之情形。其結果,可以抑制藉由圓頂部產生的超音波振動減弱之情形。 The dome of the piezoelectric vibrating plate generates ultrasonic vibration by, for example, vibrating. Furthermore, the piezoelectric vibrating plate can be held via a flange provided around the domed portion. Therefore, the holding member for holding the piezoelectric vibrating plate, such as the side wall of the water storage portion in the ultrasonic water jet device and the casing of the ultrasonic horn, can be suppressed from being directly in contact with the dome. As a result, since the dome is difficult to be pressed by the holding member, the dome is likely to vibrate. In addition, since the vibration of the dome is less likely to be transmitted to the holding member than in the configuration in which the dome is in direct contact with the holding member, it is possible to suppress the weakening of the vibration of the dome. As a result, it is possible to suppress the weakening of the ultrasonic vibration generated by the dome.
再者,在本超音波水噴射裝置中,因藉由本壓電振動板產生之超音波振動朝向噴射口集中,故超音波振動在儲水部內難以反射。因此,藉由從噴射口被噴射的水,可以充分地傳播超音波振動。因此,因使用從噴射口被噴射的水而洗淨被加工物之時,可以充分地將超音波振動傳遞至被加工物之髒污,故可以提升洗淨力。 Furthermore, in the ultrasonic water jetting device, since the ultrasonic vibration generated by the piezoelectric vibrating plate is concentrated toward the jetting port, the ultrasonic vibration is difficult to be reflected in the water storage part. Therefore, the ultrasonic vibration can be sufficiently propagated by the water injected from the injection port. Therefore, when the workpiece is washed using the water sprayed from the injection port, the ultrasonic vibration can be sufficiently transmitted to the dirt of the workpiece, so that the detergency can be improved.
並且,即使在藉由切削裝置對被加工物進行切削加工之時,在加工點的切入深度較深之情況,亦可以藉由從噴射口被噴射的水,對切削溝內之切削屑,充分地 傳遞超音波振動。因此,可以從切削溝良好地排出切削屑。 In addition, even when the workpiece is cut by the cutting device, the cutting depth of the processing point is deep, and the cutting chips in the cutting groove can be fully treated by the water sprayed from the injection port. land Transmits ultrasonic vibrations. Therefore, chips can be well discharged from the cutting groove.
再者,在本超音波喇叭中,因振動件具有使欲使超音波振動集中之一點側凹陷而被形成圓頂狀的輻射面,故可以使從振動件被輻射的超音波振動集中於該一點。 Furthermore, in this ultrasonic horn, because the vibrating member has a dome-shaped radiating surface that is sunk on one side where the ultrasonic vibrations are concentrated, it is possible to concentrate the ultrasonic vibrations radiated from the vibrating member on this point. a little.
1:晶圓 1: Wafer
3:分割預定線 3: Split the scheduled line
131:改質層 131: modified layer
11:超音波水噴射裝置 11: Ultrasonic water jet device
13:高頻電源供給部 13: High frequency power supply part
15:噴射裝置本體 15: Injection device body
17:供給口 17: supply port
19:儲水部 19: Water storage department
21:噴射口 21: Injection port
23:超音波振動件 23: Ultrasonic vibration parts
24:壓電振動板 24: Piezoelectric vibration plate
241:圓頂部 241: round top
243:鍔部 243: Neck
245:溝部 245: Ditch
25:共振板 25: Resonant plate
251:圓頂部 251: round top
253:鍔部 253: Neck
26:輻射面 26: Radiating surface
31:晶圓洗淨裝置 31: Wafer cleaning device
33:旋轉台部 33:Rotary platform
35:超音波水噴射部 35:Ultrasonic water jet department
41:挾盤載置台 41: Carrying plate loading platform
42:吸附面 42: Adsorption surface
43:旋轉軸 43:Rotary axis
45:載置台旋轉馬達 45: Mounting table rotation motor
51:水平管 51: horizontal pipe
52:吸附面 52: Adsorption surface
53:旋轉軸桿 53: Rotating shaft
55:洗淨水供給源 55: Cleansing water supply source
57:旋轉馬達 57:Rotary motor
L:洗淨水 L: washing water
Ls:超音波水 Ls: Ultrasonic water
61:晶圓切削裝置 61: Wafer cutting device
63:切削部 63: cutting part
65:挾盤載置台 65: Carrying plate loading table
71:轉軸 71: Shaft
73:凸緣 73: Flange
75:切削刀 75: Cutter
81:刀蓋 81: knife cover
83:切削水噴射噴嘴 83: Cutting water jet nozzle
85:切削水供給管 85: Cutting water supply pipe
87:洗淨水供給管 87: Washing water supply pipe
T:切割膠帶 T: cutting tape
111:搬運裝置 111: Handling device
113:驅動源 113: Drive source
115:臂部 115: arm
117:吸引源 117: source of attraction
119:連結構件 119: Connecting components
121:搬運墊 121: Carrying mat
123:吸附部 123: adsorption part
125:框體 125: frame
141:載置台 141: Carrying table
151:水槽 151: Sink
152:螺帽部 152: nut part
153:X軸方向移動手段 153: X-axis direction movement means
155:滑動構件 155: sliding member
157:馬達 157: motor
159:滾珠螺桿 159: Ball screw
161:超音波分割裝置 161:Ultrasonic splitting device
163:高頻電源供給部 163:High frequency power supply unit
165:Y軸方向移動手段 165: Y-axis direction movement means
166:螺帽部 166: nut part
167:升降手段 167: lifting means
169:超音波喇叭 169: Ultrasonic horn
171:殼體 171: shell
181:連通路 181: connected road
PT:保護膠帶 PT: Protective Tape
W:水 W: water
圖1為表示與一實施型態有關之被加工物之一例的晶圓之斜視圖。 FIG. 1 is a perspective view of a wafer showing an example of a workpiece related to an embodiment.
圖2為表示與一實施型態有關之超音波水噴射裝置之構成的說明圖。 Fig. 2 is an explanatory diagram showing the configuration of an ultrasonic water jetting device according to an embodiment.
圖3為圖2所示之超音波水噴射裝置之壓電振動板之斜視圖。 Fig. 3 is a perspective view of the piezoelectric vibrating plate of the ultrasonic water jet device shown in Fig. 2 .
圖4為包含壓電振動板之超音波振動件之剖面圖。 Fig. 4 is a cross-sectional view of an ultrasonic vibrating element including a piezoelectric vibrating plate.
圖5為表示具備圖2所示之超音波水噴射裝置之晶圓洗淨裝置的斜視圖。 FIG. 5 is a perspective view showing a wafer cleaning apparatus provided with the ultrasonic water jet apparatus shown in FIG. 2 .
圖6為圖5所示之晶圓洗淨裝置之概略剖面圖。 FIG. 6 is a schematic cross-sectional view of the wafer cleaning device shown in FIG. 5 .
圖7為表示具備圖2所示之超音波水噴射裝置之晶圓切削裝置的概略剖面圖。 FIG. 7 is a schematic cross-sectional view showing a wafer cutting device equipped with the ultrasonic water jetting device shown in FIG. 2 .
圖8為表示圖5所示之晶圓切削裝置中之切削部的說明圖。 FIG. 8 is an explanatory view showing a cutting portion in the wafer cutting device shown in FIG. 5 .
圖9為表示超音波水噴射裝置之變形例的說明圖。 Fig. 9 is an explanatory view showing a modified example of the ultrasonic water jetting device.
圖10為表示與其他實施型態有關之分割方法之搬運工程及浸沒工程的說明圖。 Fig. 10 is an explanatory diagram showing a transfer process and immersion process of a division method related to another embodiment.
圖11為表示與其他實施型態有關之分割方法之分割工程的說明圖。 FIG. 11 is an explanatory diagram showing a division process of a division method related to another embodiment.
圖12為表示壓電振動板之變形例的斜視圖。 Fig. 12 is a perspective view showing a modified example of the piezoelectric vibrating plate.
圖13為圖12所示之壓電振動板之剖面圖。 Fig. 13 is a cross-sectional view of the piezoelectric vibrating plate shown in Fig. 12 .
首先,針對與本實施型態有關之被加工物,簡單說明。 First, a brief description will be given of the workpiece related to this embodiment.
如圖1所示般,與本實施型態有關之被加工物之一例亦即晶圓1被形成例如圓板狀。在晶圓1之表面2a,形成有包含裝置4之裝置區域5及其外側之外周剩餘區域6。在裝置區域5中,在藉由格子狀之分割預定線3被區劃的區域分別形成裝置4。外周剩餘區域6包圍裝置區域5。並且,在晶圓1之外周緣7,設置表示晶圓1之結晶方位的切口9。晶圓1之背面2b不具有裝置4,藉由研削磨石等被研削的被研削面。
As shown in FIG. 1, a
在本實施型態中,晶圓1係於背面2b之研削後,被施予使用洗淨水的旋轉洗淨。再者,於沿著晶圓1之分割預定線3形成切削溝之時,為了從切削溝內除去切削屑,噴吹洗淨水。在本實施型態中被使用的洗淨水為超
音波水。超音波水係使超音波振動傳播的洗淨水。
In this embodiment, the
另外,晶圓1即使為在包含矽、砷化鎵等之半導體基板形成有半導體裝置之半導體晶圓亦可,即使為在包含陶瓷、玻璃、藍寶石等之無機材料基板形成有光裝置之光裝置晶圓亦可。
In addition, the
接著,針對用以對晶圓1噴吹洗淨水之裝置(超音波水噴射裝置)予以說明。與本實施型態有關之超音波水噴射裝置係從噴射口噴射作為洗淨水的超音波水。超音波水噴射裝置係被用於上述旋轉洗淨及切削屑之除去。
Next, a device (ultrasonic water jet device) for spraying cleaning water onto the
首先,針對超音波水噴射裝置之構成予以說明。如圖2所示般,超音波水噴射裝置11具備供給高頻電壓之高頻電源供給部13及噴射超音波水之噴射裝置本體15。噴射裝置本體15包含洗淨水L之供給口17、儲存被供給之洗淨水L的儲水部19、將超音波傳遞至被儲存的洗淨水L之超音波振動件23,及被傳遞超音波的洗淨水L亦即超音波水Ls之噴射口21。
First, the configuration of the ultrasonic water jetting device will be described. As shown in FIG. 2, the ultrasonic
供給口17係為了將洗淨水L導入至噴射裝置本體15內而被使用。在儲水部19連通供給口17,被供給洗淨水L。儲水部19係暫時性地儲存從供給口17被供給之洗淨水L之筒狀的構件(容器)。噴射口21被設置在儲水部19之一方之端側(下端)。噴射口21係將被儲存在儲水部19之洗淨水L朝向外部噴射。儲水部19係朝向噴射口21漸尖。
The
超音波振動件23被配置在與儲水部19中的噴射口21相向之位置,被連接於高頻電源供給部13之壓電振
動板24及與壓電振動板24鄰接配置之共振板25。
The ultrasonic vibrating
如圖3及圖4所示般,壓電振動板24具有中央之圓頂部241及包圍圓頂部241之鍔部243。圓頂部241被構成接受來自高頻電源供給部13之1MHz~3MHz之高頻電壓而振動,產生超音波振動。圓頂部251之凹陷側朝向噴射口21(參照圖2)。
As shown in FIGS. 3 and 4 , the
鍔部243係以從圓頂部24之外周朝徑向外側突出之方式,被設置在圓頂部241之周圍。
The
具有如此之構成的壓電振動板24例如能夠藉由使用模框之一體成型而被形成。
The piezoelectric vibrating
共振板25係如圖4所示般,具有與壓電振動板24相同之圓頂部251及鍔部253,被鄰接配置在壓電振動板24之內部。共振板25之圓頂部251之外面與壓電振動板24之圓頂部241之內面密接。共振板25之鍔部253之上面與壓電振動板24之鍔部243之下面密接。
As shown in FIG. 4 , the
再者,如圖2所示般,共振板25之圓頂部251之內面,成為朝向儲水部19內之洗淨水L輻射超音波振動的輻射面26,被配置在與噴射口21相向之位置。
Furthermore, as shown in FIG. 2, the inner surface of the
輻射面26係因應壓電振動板24之圓頂部241及共振板25之圓頂部251之形狀,而形成凹陷的圓頂形狀。因此,從輻射面26被輻射之超音波振動在從輻射面26僅距離特定距離之位置(在本實施型態中為噴射口21)聚焦,於集中在該位置。
The radiation surface 26 forms a concave dome shape according to the shape of the
如此一來,超音波振動件23之一方之面亦即輻射面
26,係以成為欲使超音波振動集中之一點的焦點為中心,使該一點側凹陷而形成圓頂狀。
In this way, one side of the ultrasonic vibrating
共振板25之圓頂部251係藉由與壓電振動板24之圓頂部241之超音波振動共振,將超音波振動從輻射面26傳遞至洗淨水L。依此,從噴射口21朝向外部噴射的洗淨水L成為超音波水Ls。
The
再者,如圖2所示般,壓電振動板24之鍔部253及共振板25之鍔部253藉由儲水部19之側壁而被支持。
Furthermore, as shown in FIG. 2 , the
接著,針對使用超音波水噴射裝置11之晶圓洗淨裝置予以說明。如圖5所示般,晶圓洗淨裝置31係旋轉型之洗淨裝置,具備旋轉台部33及超音波水噴射部35。
Next, a wafer cleaning device using the ultrasonic
旋轉台部33被構成保持晶圓1而旋轉。如圖5所示般,旋轉台部33具備用保持晶圓1之挾盤載置台41、挾盤載置台41之旋轉軸43及與旋轉軸43連接而用以使挾盤載置台41旋轉之載置台旋轉馬達45。
The
挾盤載置台41被形成較晶圓1小的圓形狀,保持晶圓1。因此,挾盤載置台41係在其上面中央部具備用以吸附晶圓1之吸附面42。吸附面42藉由多孔陶瓷等之多孔質材料而形成。吸附面42係經由挾盤載置台41內之管路而連接於吸引源(皆無圖示)。藉由產生在吸附面52之負壓,晶圓1被吸引保持在挾盤載置台41。
The pinch mounting table 41 is formed in a circular shape smaller than the
旋轉軸43係其上端部被連結於挾盤載置台41之下面中心,下端部被連接於載置台旋轉馬達45。載置台旋轉馬達45係經由旋轉軸43將旋轉驅動力傳達至挾盤載置
台41。依此,挾盤載置台41係如圖5及圖6所示般,在保持晶圓1之狀態下,以旋轉軸43為中心,例如朝向A方向進行高速旋轉。
The upper end of the
超音波水噴射部35除了圖2所示之超音波水噴射裝置11,具備中空之軸桿亦即水平管51、保持水平管51之旋轉軸桿53、被連接於旋轉軸桿53之上端的洗淨水供給源55及旋轉馬達57。洗淨水供給源55係水供給源之一例。
In addition to the ultrasonic
水平管51之前端具備超音波水噴射裝置11。水平管51之基端被保持在旋轉軸桿53之上端。旋轉軸桿53被豎立設置成與旋轉台部33之旋轉軸43略平行。旋轉馬達57係使旋轉軸桿53旋轉。即是,旋轉軸桿53係使用旋轉馬達57之驅動力,使水平管51及超音波水噴射裝置11在挾盤載置台41(晶圓1)上旋轉。
The front end of the
另外,水平管51具有從旋轉軸桿53之上端到達至挾盤載置台41之中心的長度。依此,旋轉軸桿53成為能夠將水平管51之前端所具備的超音波水噴射裝置11,從晶圓1之外周移動至中心。
In addition, the
被連接於旋轉軸桿53之上端的洗淨水供給源55係經由旋轉軸桿53之上端及被配設在水平管51之內部的洗淨水供給管(無圖示),對超音波水噴射裝置11之供給口17(參照圖2)供給洗淨水L。
The washing
在此,針對晶圓洗淨裝置31所致的洗淨處理予以說明。在對晶圓1進行的洗淨處理中,如圖5及圖6所
示般,晶圓1被載置於挾盤載置台41上,藉由在吸附面42產生的負壓,晶圓1之背面2b被吸引保持在挾盤載置台41。之後,載置台旋轉馬達45被驅動,保持晶圓1之挾盤載置台41高速旋轉。而且,藉由旋轉軸桿53,超音波水噴射裝置11從挾盤載置台41之外側之退避位置,移動至晶圓1之上方。並且,洗淨水L從洗淨水供給源55被供給至超音波水噴射裝置11,超音波水Ls從超音波水噴射裝置11之噴射口21(參照圖2)被噴射至晶圓1。
Here, the cleaning process by the
此時,超音波水噴射裝置11係以通往晶圓1之旋轉中心之路徑,如在圖5中箭號B所示般往返移動。因挾盤載置台41高速旋轉,故挾盤載置台41上之晶圓1之全區域,被噴吹洗淨水L。如此一來,晶圓1藉由洗淨水L被旋轉洗淨。
At this time, the ultrasonic
如上述般,晶圓洗淨裝置31具備用以將洗淨用之超音波水Ls噴射至晶圓1之超音波水噴射裝置11。在超音波水噴射裝置11中,朝向儲水部19內之洗淨水L輻射超音波震動的輻射面26係因應壓電振動板24之圓頂部241之形狀而形成凹陷的圓頂形狀。而且,圓頂形狀之凹陷的側朝向噴射口21側。因此,從輻射面26被輻射的超音波振動朝向噴射口21集中。即是,超音波振動朝向噴射口21聚焦。因此,因超音波振動難以在儲水部19內反射,故可以藉由從噴射口21被噴射之超音波水Ls,對晶圓1充分地傳播超音波振動。因此,因使用從噴射口21被噴射的超音波水Ls而洗淨晶圓1之時,可以充分地將超音波振動傳遞至
晶圓1上之髒污,故可以提升洗淨力。
As described above, the
接著,針對使用圖2所示之超音波水噴射裝置11的晶圓切削裝置予以說明。晶圓切削裝置係沿著晶圓1之分割預定線3(參照圖1),形成切削溝。
Next, a wafer cutting apparatus using the ultrasonic
如圖7所示般,晶圓切削裝置61具有具備切削刀之切削部63及保持晶圓之挾盤載置台65。挾盤載置台65係經由切割膠帶T而吸引保持晶圓1。挾盤載置台65係對切削部63在例如箭號C方向做相對性地移動。
As shown in FIG. 7, the
切削部63具有圖2所示之構成的超音波水噴射裝置11、切削晶圓1之切削刀75、使切削刀75旋轉的轉軸71,及用以固定切削刀75的凸緣73。轉軸71之前端側被插入至切削刀75之中央,藉由凸緣73,切削刀75被固定在轉軸71。轉軸71係藉由被連結於其後端側的馬達(無圖示)而被旋轉驅動。隨此,切削刀75以高速旋轉。切削刀75係藉由例如以樹脂結合劑固定鑽石磨粒而成形圓板狀而被形成。
The cutting
如圖8所示般,切削部63除了上述切削刀75等之外,又具備覆蓋切削刀75之刀蓋81、該刀蓋81所具備切削水噴射噴嘴83、對該切削水噴射噴嘴83供給切削水的切削水供給管85,及對超音波水噴射裝置11供給洗淨水的洗淨水供給管87。
As shown in FIG. 8 , the cutting
切削水噴射噴嘴83係朝向切削刀75切入至晶圓1之位置亦即切削點放出從切削水供給管85被供給之切削水。藉由該切削水,切削刀75被冷卻及洗淨。洗淨水供
給管87被連接於超音波水噴射裝置11之圖2所示之供給口17,對超音波水噴射裝置11供給洗淨水。超音水噴射裝置11係以傾斜之狀態被配置成噴射口21朝向切削點。
The cutting
在此,針對晶圓切削裝置61所致的晶圓1之切削加工予以說明。首先,如圖7所示般,晶圓1係經由切割膠帶T被吸引保持在挾盤載置台65。接著,移動挾盤載置台65,將晶圓1配置在成為切削區域的切削部63之下方。
Here, the cutting process of the
之後,調整切削部63之高度,以使切削刀75之刀尖分配在因應晶圓1之切入深度的位置。之後,藉由使挾盤載置台65對高速旋轉的切削刀75在水平方向做相對性移動,沿著晶圓1之分割預定線3形成切削溝。切削溝之形成時,在切削刀75所致的切削點,切削水從切削水噴射噴嘴83被放出,並且超音波水Ls從超音波水噴射裝置11被噴射。如此一來,沿著在晶圓1中之所有的分割預定線3,形成切削溝。
Afterwards, the height of the cutting
如上述般,晶圓切削裝置61具備超音波水噴射裝置11,超音波水噴射裝置11係對在晶圓1中之切削溝之形成部位,噴射超音波水Ls。如上述般,在超音波水噴射裝置11中,輻射面26係因應壓電振動板24之圓頂部241之形狀而形成凹陷的圓頂形狀。而且,圓頂形狀之凹陷的一側朝向噴射口21側。因此,從輻射面26被輻射的超音波振動朝向噴射口21集中。因此,因藉由噴射口21被噴射的超音波水Ls可以朝向晶圓1充分地傳播超音波振動,故即
使在切削點之切入深度較深之情況,藉由從噴射口21被噴射之超音波水Ls,可以對切削溝內之切削屑,充分地傳遞超音波振動。因此,可以藉由超音波水Ls,從切削溝良好地排出切削屑。
As mentioned above, the
再者,在本實施型態之壓電振動板24中,在接受高頻電壓進行振動而產生超音波振動的圓頂部241之周圍,設置鍔部243,鍔部243被支持於儲水部19之側壁。因此,因圓頂部241不直接與儲水部19接觸,故圓頂部241難藉由儲水部19被壓迫。因此,圓頂部241成為容易振動。並且,比起圓頂部241直接性地與儲水部19接觸的構成,圓頂部241之振動難傳遞至儲水部19。因此,可以抑制圓頂部241之振動減弱之情形。其結果,可以抑制藉由圓頂部241產生的超音波振動減弱之情形。
Furthermore, in the piezoelectric vibrating
另外,在圖2所示之超音波水噴射裝置11中,配置在噴射裝置本體15之內部的儲水部19朝向噴射口21漸尖。但是,儲水部19之構成不限定於此。如圖9所示之超音波水噴射裝置11a般,儲水部19a即使不朝向噴射口21漸尖亦可。即是,即使噴射裝置本體15具有略圓筒狀之內壁亦可。
In addition, in the ultrasonic
再者,在與本實施型態有關之壓電振動板24中之圓頂部241之圓頂形狀即使為類似於球形之一部分的內面的形狀亦可,即使為類似於研缽之內面的形狀亦可。即是,圓頂部241若被構成超音波振動從輻射面26朝向噴射口21集中亦可。
Furthermore, the dome shape of the
在本實施型態中,針對藉由具備圖4等所示之超音波振動件23的裝置,不使用切削裝置,而使用超音波振動沿著分割預定線3分割圖1所示之晶圓1之方法予以說明。藉由該分割,晶圓1被分斷成分別包含1個裝置4的複數晶片。
In this embodiment, the
在本實施型態有關之分割方法(本分割方法)中,首先使用眾知的技術,實施在晶圓1形成改質層之改質層形成工程。在改質層之形成中,例如準備照射脈衝雷射光線的裝置。來自該裝置之脈衝雷射光線具有穿透晶圓1之波長(例如紅外光區域)將該脈衝雷射光線在將其聚光點定位在晶圓1之內部的狀態,一面照射至晶圓1,一面沿著晶圓1之分割預定線3移動。依此,在晶圓1之內部,如圖10所示般,形成沿著分割預定線3的改質層131。
In the dicing method (this dicing method) related to this embodiment mode, first, a modified layer forming process of forming a modified layer on the
另外,在本實施型態中,一面變更其聚光深度,一面對一條分割預定線3,例如照射三次脈衝雷射光線。依此,沿著一條分割預定線3,形成在晶圓1之厚度方向排列的三條改質層131。
In addition, in the present embodiment, while changing the focusing depth, one
接著,實施藉由搬運裝置111將具有改質層131之晶圓
1載置於載置台141的搬運工程,及使載置台141在水槽151浸沒的浸沒工程。在此,針對在本分割方法中使用的搬運裝置111、載置台141及水槽151之構成予以說明。
Next, transfer the wafer with the modified
如圖10所示般,本分割方法之搬運裝置111具備吸引保持晶圓1之搬運墊121、搬運墊121之吸引源117、支持搬運墊121的臂部115、臂部115之驅動源13及連結搬運墊121和臂部115的連結構件119。
As shown in FIG. 10 , the
驅動源113係臂部115之驅動源並且支持構件。在臂部115中,其基端側被連結於驅動源113,另外前端側經由連結構件119保持搬運墊121。臂部115係以驅動源113作為旋轉軸而能夠在XY平面上旋轉。並且,臂部115係以驅動源113作為升降軸而能夠沿著Z軸在上下方向升降。
The driving
搬運墊121具備吸引保持晶圓12之吸附部123,及覆蓋吸附部123的框體125。框體125被連接於連結構件119,支持吸附部123。吸附部123係由多孔質陶瓷等之多孔質材料構成,被形成圓板狀。
The
吸引源117包含真空產生裝置及壓縮機等,具有在Z方向延伸的連通路181。連通路181貫通臂部115、連結構件119及框體125,到達至吸附部123。因此,吸引源117係經由該連通路181被連接於吸附部123。吸引源117經連通路181吸引吸附部123,在吸附部123之表面產生負壓。吸附部123藉由該負壓,吸引保持晶圓1。
The
再者,如圖10所示般,載置台141在XY平面
具有平行的載置面,被配置及固定於水槽151之底部。再者,載置台141具有在Z軸方向延伸之旋轉軸(無圖示),以該旋轉軸為中心,能夠在XY平面內旋轉。載置台141係以該旋轉軸為中心,能夠在水槽151內,例如至少旋轉90°。
Furthermore, as shown in FIG. 10 , the
水槽151具備被配置在下面中央的螺帽部152。水槽151係經能夠在X軸方向之滑動構件155,被支撐於X軸方向移動手段153。X軸方向移動手段153係用以使水槽151在X軸方向(與紙張垂直之方向)移動的構件。X軸方向移動手段153具備被配置成與X軸平行的滾珠螺桿159,及使滾珠螺桿159旋轉的馬達157。滾珠螺桿159被卡合於水槽151之螺帽部152。因此,滾珠螺桿159藉由馬達157之驅動力旋轉,水槽151經由螺帽部152而接受移動力,沿著X軸方向移動。
The
針對使用具有如此之構成的搬運裝置111及載置台141的本分割方法之搬運工程及浸沒工程予以說明。首先,在晶圓1之表面2a黏貼用以保護裝置4之保護膠帶PT。之後,使用來自驅動源113之驅動力,使臂部115在XY平面內旋轉,在被載置於特定位置的晶圓1之背面2b側之上方,配置搬運墊121。而且,藉由使臂部115沿著Z方向下降,使搬運墊121接觸於晶圓1之背面2b。並且,藉由使吸引源117動作,藉由搬運墊121之吸附部123吸引保持晶圓1。
The conveyance process and immersion process of this dividing method using the
在該狀態,藉由使臂部115旋轉及升降,將晶圓1載置於水槽151內之載置台141上。而且,藉由眾知
之方法,將晶圓1固定於載置台141。之後,調整在晶圓1之XY平面內的位置,以使晶圓1中的分割預定線3之方向,沿著X軸方向及Y軸方向。該調整係藉由在載置台141之XY平面內的旋轉被實施。
In this state, the
接著,藉由從無圖示之水供給源對水槽151內供給水,藉由特定量之水W填滿水槽151內。依此,被保持在水槽151內之載置台141的晶圓1浸沒。
Next, by supplying water into the
之後,停止來自吸引源117之吸引力,從晶圓1切離搬運墊121,沿著Z方向使朝上方移動。依此,搬運及浸沒工程完成。
Thereafter, the suction force from the
接著,實施使用超音波振動將浸沒的晶圓1分割成晶片之分割工程。在分割工程中,如圖11所示般,在浸沒的晶圓1上配置超音波分割裝置161。而且,沿著晶圓1之分割預定線3,移動被定位在晶圓1之上方的超音波喇叭169,依序對晶圓1之上面的分割預定線3施加超音波振動,而以改質層131為起點分割晶圓1。
Next, a division process of dividing the submerged
以下,針對在本分割方法中使用的超音波分割裝置161之構成予以說明。如圖11所示般,超音波分割裝置161具備輸出高頻波電壓之高頻電源供給部163、輻射超音波振動的超音波喇叭169、用以使超音波喇叭169沿著Y軸方向移動的Y軸方向移動手段165、用以使超音波喇叭169升降的升降手段167,及卡合於Y軸方向移動手段165及
升降手段167的螺帽部166。
Hereinafter, the configuration of the
高頻電源供給部163具有與如圖5所示之高頻電源供給部13相同之構成,將高頻電壓輸出至超音波喇叭169。Y軸方向移動手段165係用以使超音波喇叭169沿著Y軸方向移動的構件,包含在Y軸方向延伸的滾珠螺桿。螺帽166與Y軸方向移動手段165之滾珠螺桿卡合,隨著該滾珠螺桿之旋轉,沿著Y軸方向移動。
The high-frequency
升降手段167之下端保持超音波喇叭169。升降手段167之上端係以能夠沿著Z方向升降之方式被保持在螺帽部166。因此,升降手段167能夠與超音波喇叭169同時沿著Z軸方向而升降。
The lower end of the lifting means 167 holds the
接著,針對超音波喇叭169予以說明。如圖11所示般,超音波喇叭169包含輻射超音波振動的圖4所示的超音波振動件23,及保持超音波振動件23之外周部的殼體171。
Next, the
如上述般,超音波振動件23具備接受來自高頻電源供給部163之1MHz~3MHz之高頻電壓進行振動而產生超音波振動的壓電振動板24,及與壓電振動板24鄰接之共振板25。
As mentioned above, the ultrasonic vibrating
在本實施型態中,共振板25係藉由與壓電振動板24之超音波振動共振,從輻射面26,經由水W而輻射超音波振動。如上述般,輻射面26係以從輻射面26被輻射的超音波振動,在僅離輻射面26特定具距離的位置距聚焦,而集中在該位置之方式,被形成圓頂形狀。
In this embodiment, the
再者,在本實施型態中,壓電振動板24之鍔部253及共振板25之鍔部253被保持在殼體171。
Furthermore, in the present embodiment, the
再者,超音波分割裝置161具有能夠從晶圓1之背面2b,穿透晶圓1而攝影晶圓1之表面2a的無圖示對準攝影機。該對準攝影機係例如紅外線攝影機。藉由使用該對準攝影機,能夠從晶圓1之背面2b側,攝影被形成在表面2a之分割預定線3。
Furthermore, the
針對使用具有如此之構成的超音波分割裝置161的本分割方法之分割工程予以說明。於實施浸沒工程之後,在維持被保持在載置台141之狀態的浸沒的晶圓1之背面2b上,配置超音波分割裝置161。
The division process of this division method using the
接著,使用X軸方向移動手段153及Y軸方向移動手段165,對在XY平面內之晶圓1,實施超音波喇叭169之相對位置的控制。藉由該控制,在超音波喇叭169之超音波振動件23之焦點(輻射面26之焦點)被配置在晶圓1中之X方向延伸的第1條分割預定線3之上方。另外,在該控制使用上述對準攝影機。
Next, using the X-axis direction moving means 153 and the Y-axis direction moving means 165, the relative position of the
接著,控制升降手段167,控制超音波喇叭169之Z軸方向的位置。藉由該控制,超音波振動件23之焦點的高度成為晶圓1之背面2b的高度。依此,超音波振動件23之焦點被配置在晶圓1之背面2b中的分割預定線3上。在該狀態,驅動高頻電源供給部163而對超音波振動件23輸出高頻電壓,使從超音波振動件23輻射超音波振動。依此,超音波振動朝向晶圓1之分割預定線3,經由水槽151
內之水W集中性地被輻射。
Next, the lifting means 167 is controlled to control the position of the
並且,一面從超音波喇叭169之超音波振動件23朝向分割預定線3輻射超音波振動,一面沿著在X軸方向沿伸之分割預定線3,使超音波喇叭169對晶圓1做相對性地移動。即是,驅動保持水槽151之X軸方向移動手段153之馬達157,使載置台141連同水槽151在X軸方向移動。對一條分割預定線3之全區域輻射超音波振動之後,使用Y軸方向移動手段165及升降手段167,將超音波振動件23之焦點對準在X軸方向沿伸之另外的分割預定線3上,沿著該分割預定線3,使超音波喇叭169做相對性移動。
And, while radiating ultrasonic vibrations from the ultrasonic vibrating
如此一來,對在晶圓1中平行於一個方向的所有分割預定線3之全區域,輻射超音波振動。之後,使載置台141旋轉90°,對與已經被輻射超音波振動的分割預定線3垂直的分割預定線3,同樣地輻超音波振動。
In this way, ultrasonic vibrations are radiated to the entire area of all the
如此一來,在晶圓1中所有的分割預定線3之全區域,施加超音振動。在晶圓1中,藉由超音波振動所致的外力被施加至分割預定線3,以沿著分割預定線3而被形成之強度弱的改質層131為起點,產生裂紋。因此,晶圓1沿著該分割預定分割線3被分割。依此,晶圓1小片化,生成複數晶片。
In this way, ultrasonic vibration is applied to the entire area of all the
如上述般,在本分割方法中使用的超音波喇叭169中,輻射面26係以成為欲使超音波振動集中之一點的焦點為中心,並使該一點側凹陷而形成圓頂狀。依此,可以將從超音波振動件23被輻射之超音波振動集中在一
點。
As described above, in the
再者,在本分割方法中,沿著晶圓1之分割預定線3,形成強度弱的改質層131。而且,超音波喇叭169係一面沿著晶圓1之分割預定線3移動,一面經由水W將超音波振動施加於晶圓1之上面。因此,在本分割方法中,能夠對晶圓1之所有改質層131,集中性地施加超音波振動至對每個改質層131。因此,因能夠沿著改質層131良好地分割晶圓1,故可以抑制產生分割殘留。
Furthermore, in this dividing method, the modified
再者,在本實施型態之壓電振動板24中,被設置在接受高頻電壓進行振動而產生超音波振動的圓頂部241之周圍的鍔部243,被保持在殼體171。因此,因圓頂部241不直接性地接觸於殼體171,故圓頂部241難藉由殼體171被壓迫。因此,圓頂部241容易振動。並且,比起圓頂241直接性地接觸於殼體171的構成,圓頂部241之振動難傳遞至殼體171。因此,可以抑制圓頂部241之振動減弱之情形。其結果,可以抑制藉由圓頂部241產生的超音波振動減弱之情形。
Furthermore, in the piezoelectric vibrating
另外,搬運裝置111及超音波分割裝置161中之任一者即使以被配置在水槽151內之晶圓1上之方式,被構成對水槽151旋轉驅動亦可。或是,即使以晶圓1被配置在與XY平面方向平行配置的搬運裝置111及超音波分割裝置161中之任一者的下部之方式,水槽151平面性地(例如直線性地)移動亦可。
In addition, either one of the
再者,在本實施型態中,搬運裝置111係將
晶圓1載置在載置台141之後,水槽151被供給水,之後,搬運裝置111從晶圓1切離。但是,不限定於此,即使搬運裝置111之搬運墊121在將晶圓1載置於載置台141之後,從晶圓1切離,之後水槽151被供給水亦可。
Furthermore, in this embodiment, the conveying
再者,在本實施型態中,晶圓1藉由搬運裝置111被載置於事先被配置在水槽151內之載置台141,之後,水槽151內被供給水。但是,並不限定於此,即使在儲存水之水槽151內之載置台141,載置晶圓1亦可。或是,即使被配置在水槽151外之載置台141,藉由搬運裝置111載置晶圓1,之後,保持晶圓1之載置台141被配置在儲存水之水槽151亦可。
Furthermore, in this embodiment, the
再者,在實施型態1及2中,即使使用圖12及圖13所示之壓電振動板24a,取代圖3所示之壓電振動板24亦可。該壓電振動板24a除了圖3所示之圓頂部241及鍔部243之外,具有溝部245。溝部245被設置在鍔部243中與圓頂部241相接之部位的圓頂部241之頂部側的面。即是,溝部245係以包圍圓頂部241之方式,設置在鍔部243。
Furthermore, in
在該構成中,藉由溝部245之存在,在鍔部243中與圓頂部241相接之部分的剖面積變小。因此,可以抑制產生在圓頂部241的振動傳遞至鍔部243之情形。
In this configuration, the presence of the
因此,在該構成中,可以抑制超音波振動經由鍔部243而傳遞至儲水部19之側壁或殼體171之情形。因此,在該構成中,可以將壓電振動板24之圓頂部241之振動,效率佳地傳達至共振板25之圓頂部251。
Therefore, in this configuration, it is possible to suppress the ultrasonic vibration from being transmitted to the side wall of the
再者,在上述實施型態1及2中,具備超音波振動23具備壓電振動板24及共振板25,共振板25具有輻射面26。但是,並不限定於此,即使超音波振動件23具備壓電振動板24,但是不具備共振板25亦可。在該構成中,壓電振動板24之圓頂部241具有以欲使超音波振動集中之一點為中心使一點側凹陷而形成圓頂狀之輻射面,從該輻射面振盪超音波振動。即是,壓電振動板24與噴射口21相向而被配設在儲水部19,振盪超音波振動。
Furthermore, in
11:超音波水噴射裝置 11: Ultrasonic water jet device
13:高頻電源供給部 13: High frequency power supply part
15:噴射裝置本體 15: Injection device body
17:供給口 17: supply port
19:儲水部 19: Water storage department
21:噴射口 21: Injection port
23:超音波振動件 23: Ultrasonic vibration parts
24:壓電振動板 24: Piezoelectric vibration plate
25:共振板 25: Resonant plate
26:輻射面 26: Radiating surface
L:洗淨水 L: washing water
Ls:超音波水 Ls: Ultrasonic water
Claims (4)
Applications Claiming Priority (2)
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JP2018-172306 | 2018-09-14 | ||
JP2018172306A JP7295621B2 (en) | 2018-09-14 | 2018-09-14 | Wafer cutting method and wafer division method |
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TW202029378A TW202029378A (en) | 2020-08-01 |
TWI801661B true TWI801661B (en) | 2023-05-11 |
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TW108132720A TWI801661B (en) | 2018-09-14 | 2019-09-11 | Wafer cutting method and wafer dividing method |
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JP (1) | JP7295621B2 (en) |
KR (1) | KR102697731B1 (en) |
CN (1) | CN110911309B (en) |
TW (1) | TWI801661B (en) |
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JP7417464B2 (en) * | 2020-05-01 | 2024-01-18 | 株式会社ディスコ | How to generate wafers |
JP7513457B2 (en) | 2020-08-03 | 2024-07-09 | 株式会社ディスコ | Ultrasonic Cleaning Nozzle |
CN114951131B (en) * | 2022-04-26 | 2024-02-20 | 南京邮电大学 | Handheld portable ultrasonic cleaning device |
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JPS6130898A (en) * | 1984-07-24 | 1986-02-13 | Nec Corp | Piezoelectric speaker |
JPH05309096A (en) * | 1992-05-12 | 1993-11-22 | Toshiba Ceramics Co Ltd | Impulse wave generating source |
JP2000216126A (en) * | 1999-01-22 | 2000-08-04 | Dainippon Screen Mfg Co Ltd | Substrate cleaning method and apparatus therefor |
JP2004330104A (en) * | 2003-05-08 | 2004-11-25 | Fukoku Co Ltd | Ultrasonic vibrator, control device of ultrasonic vibrator, and ultrasonic atomizer using the same |
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JPS6490078A (en) * | 1987-09-30 | 1989-04-05 | Honda Electronic | Ultrasonic washer |
JPH04206725A (en) * | 1990-11-30 | 1992-07-28 | Toshiba Corp | Cleaning and device for semiconductor wafer |
JPH09320994A (en) * | 1996-05-28 | 1997-12-12 | Sony Corp | Dicing equipment |
JP3369418B2 (en) | 1996-11-25 | 2003-01-20 | 大日本スクリーン製造株式会社 | Ultrasonic vibrator, ultrasonic cleaning nozzle, ultrasonic cleaning device, substrate cleaning device, substrate cleaning processing system, and ultrasonic cleaning nozzle manufacturing method |
JP3746248B2 (en) | 2002-05-23 | 2006-02-15 | 株式会社東芝 | Ultrasonic cleaning nozzle, ultrasonic cleaning device and semiconductor device |
JP2006253441A (en) * | 2005-03-11 | 2006-09-21 | Kumamoto Univ | Blade processing method |
JP5183777B2 (en) * | 2011-07-12 | 2013-04-17 | 株式会社カイジョー | Ultrasonic cleaning apparatus and ultrasonic cleaning method |
KR101439790B1 (en) | 2013-09-12 | 2014-09-12 | 유승국 | Apparatus for manufacturing diagnostic kit and diagnostic kit |
JP6130898B2 (en) | 2015-12-04 | 2017-05-17 | 三菱重工業株式会社 | Voltage monitoring apparatus and voltage monitoring method |
JP7140576B2 (en) | 2018-07-12 | 2022-09-21 | 株式会社ディスコ | Wafer division method |
-
2018
- 2018-09-14 JP JP2018172306A patent/JP7295621B2/en active Active
-
2019
- 2019-08-26 CN CN201910788934.9A patent/CN110911309B/en active Active
- 2019-08-27 KR KR1020190105011A patent/KR102697731B1/en active IP Right Grant
- 2019-09-11 TW TW108132720A patent/TWI801661B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6130898A (en) * | 1984-07-24 | 1986-02-13 | Nec Corp | Piezoelectric speaker |
JPH05309096A (en) * | 1992-05-12 | 1993-11-22 | Toshiba Ceramics Co Ltd | Impulse wave generating source |
JP2000216126A (en) * | 1999-01-22 | 2000-08-04 | Dainippon Screen Mfg Co Ltd | Substrate cleaning method and apparatus therefor |
JP2004330104A (en) * | 2003-05-08 | 2004-11-25 | Fukoku Co Ltd | Ultrasonic vibrator, control device of ultrasonic vibrator, and ultrasonic atomizer using the same |
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KR20200031991A (en) | 2020-03-25 |
TW202029378A (en) | 2020-08-01 |
KR102697731B1 (en) | 2024-08-22 |
JP2020044460A (en) | 2020-03-26 |
CN110911309A (en) | 2020-03-24 |
JP7295621B2 (en) | 2023-06-21 |
CN110911309B (en) | 2024-03-29 |
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