TWI801191B - 寫入資料到閃存記憶體的方法及裝置 - Google Patents

寫入資料到閃存記憶體的方法及裝置 Download PDF

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Publication number
TWI801191B
TWI801191B TW111112708A TW111112708A TWI801191B TW I801191 B TWI801191 B TW I801191B TW 111112708 A TW111112708 A TW 111112708A TW 111112708 A TW111112708 A TW 111112708A TW I801191 B TWI801191 B TW I801191B
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TW
Taiwan
Prior art keywords
flash memory
programming data
programming
data
flash
Prior art date
Application number
TW111112708A
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English (en)
Other versions
TW202314517A (zh
Inventor
邱慎廷
Original Assignee
慧榮科技股份有限公司
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Publication of TW202314517A publication Critical patent/TW202314517A/zh
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Publication of TWI801191B publication Critical patent/TWI801191B/zh

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Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629Configuration or reconfiguration of storage systems
    • G06F3/0635Configuration or reconfiguration of storage systems by changing the path, e.g. traffic rerouting, path reconfiguration
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604Improving or facilitating administration, e.g. storage management
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0683Plurality of storage devices
    • G06F3/0689Disk arrays, e.g. RAID, JBOD
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7201Logical to physical mapping or translation of blocks or pages
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Read Only Memory (AREA)
  • Debugging And Monitoring (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Stored Programmes (AREA)
  • Complex Calculations (AREA)
TW111112708A 2021-09-29 2022-04-01 寫入資料到閃存記憶體的方法及裝置 TWI801191B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163249702P 2021-09-29 2021-09-29
US63/249,702 2021-09-29

Publications (2)

Publication Number Publication Date
TW202314517A TW202314517A (zh) 2023-04-01
TWI801191B true TWI801191B (zh) 2023-05-01

Family

ID=85769324

Family Applications (5)

Application Number Title Priority Date Filing Date
TW111112364A TWI821965B (zh) 2021-09-29 2022-03-31 編碼歷程資訊的存取方法及電腦程式產品及裝置
TW111112706A TWI787110B (zh) 2021-09-29 2022-04-01 寫入資料到閃存記憶體的方法及裝置
TW111112709A TWI799221B (zh) 2021-09-29 2022-04-01 寫入資料到閃存記憶體的方法及裝置
TW111112708A TWI801191B (zh) 2021-09-29 2022-04-01 寫入資料到閃存記憶體的方法及裝置
TW111112707A TWI805302B (zh) 2021-09-29 2022-04-01 寫入資料到閃存記憶體的方法及電腦程式產品及裝置

Family Applications Before (3)

Application Number Title Priority Date Filing Date
TW111112364A TWI821965B (zh) 2021-09-29 2022-03-31 編碼歷程資訊的存取方法及電腦程式產品及裝置
TW111112706A TWI787110B (zh) 2021-09-29 2022-04-01 寫入資料到閃存記憶體的方法及裝置
TW111112709A TWI799221B (zh) 2021-09-29 2022-04-01 寫入資料到閃存記憶體的方法及裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW111112707A TWI805302B (zh) 2021-09-29 2022-04-01 寫入資料到閃存記憶體的方法及電腦程式產品及裝置

Country Status (3)

Country Link
US (1) US11966604B2 (zh)
CN (5) CN115878020A (zh)
TW (5) TWI821965B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
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US20110302468A1 (en) * 2008-06-13 2011-12-08 Samsung Electronics Co., Ltd. Memory system and method of accessing a semiconductor memory device
CN104520932A (zh) * 2012-05-23 2015-04-15 Sk海尼克斯存储技术公司 闪存存储器控制器
TWI664634B (zh) * 2018-08-17 2019-07-01 慧榮科技股份有限公司 快閃記憶體控制器、管理快閃記憶體模組的方法及相關的電子裝置
US20210133096A1 (en) * 2017-11-29 2021-05-06 Samsung Electronics Co., Ltd. Memory system and operating method thereof

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TWI432987B (zh) 2011-03-15 2014-04-01 Phison Electronics Corp 記憶體儲存裝置、其記憶體控制器與病毒掃描方法
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TWI614759B (zh) * 2016-04-27 2018-02-11 慧榮科技股份有限公司 存取快閃記憶體模組的方法及相關的快閃記憶體控制器與記憶裝置
CN112463433B (zh) * 2016-04-27 2024-03-29 慧荣科技股份有限公司 存取闪存模块的方法及相关的闪存控制器与记忆装置
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TWI721565B (zh) * 2017-10-20 2021-03-11 慧榮科技股份有限公司 儲存裝置以及其介面晶片
TWI661307B (zh) 2017-12-06 2019-06-01 慧榮科技股份有限公司 資料儲存裝置、主機裝置、以及資料寫入方法
CN109901782A (zh) * 2017-12-07 2019-06-18 上海宝存信息科技有限公司 数据储存装置与数据储存方法
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TWI677879B (zh) * 2018-09-03 2019-11-21 慧榮科技股份有限公司 資料儲存裝置與資料處理方法
TWI703438B (zh) 2018-09-11 2020-09-01 慧榮科技股份有限公司 映射表更新方法
CN112823331B (zh) * 2018-10-10 2024-03-29 阿里巴巴集团控股有限公司 用于具有较细粒度的并行多租户ssd中的数据恢复的系统和方法
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CN112905854A (zh) * 2021-03-05 2021-06-04 北京中经惠众科技有限公司 数据处理方法、装置、计算设备及存储介质

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110302468A1 (en) * 2008-06-13 2011-12-08 Samsung Electronics Co., Ltd. Memory system and method of accessing a semiconductor memory device
CN104520932A (zh) * 2012-05-23 2015-04-15 Sk海尼克斯存储技术公司 闪存存储器控制器
US20210133096A1 (en) * 2017-11-29 2021-05-06 Samsung Electronics Co., Ltd. Memory system and operating method thereof
TWI664634B (zh) * 2018-08-17 2019-07-01 慧榮科技股份有限公司 快閃記憶體控制器、管理快閃記憶體模組的方法及相關的電子裝置

Also Published As

Publication number Publication date
TWI821965B (zh) 2023-11-11
CN115878023A (zh) 2023-03-31
TWI787110B (zh) 2022-12-11
TWI805302B (zh) 2023-06-11
CN115878021A (zh) 2023-03-31
CN115878024A (zh) 2023-03-31
US11966604B2 (en) 2024-04-23
TW202314516A (zh) 2023-04-01
CN115878022A (zh) 2023-03-31
TW202314528A (zh) 2023-04-01
TW202314529A (zh) 2023-04-01
TW202314515A (zh) 2023-04-01
CN115878020A (zh) 2023-03-31
TWI799221B (zh) 2023-04-11
TW202314517A (zh) 2023-04-01
US20230103723A1 (en) 2023-04-06

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TWI801191B (zh) 寫入資料到閃存記憶體的方法及裝置