TWI799917B - 用於半導體處理系統的分配部件 - Google Patents
用於半導體處理系統的分配部件 Download PDFInfo
- Publication number
- TWI799917B TWI799917B TW110126377A TW110126377A TWI799917B TW I799917 B TWI799917 B TW I799917B TW 110126377 A TW110126377 A TW 110126377A TW 110126377 A TW110126377 A TW 110126377A TW I799917 B TWI799917 B TW I799917B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing systems
- semiconductor processing
- distribution components
- distribution
- components
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/934,227 US20220028710A1 (en) | 2020-07-21 | 2020-07-21 | Distribution components for semiconductor processing systems |
US16/934,227 | 2020-07-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202220086A TW202220086A (zh) | 2022-05-16 |
TWI799917B true TWI799917B (zh) | 2023-04-21 |
Family
ID=79689445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110126377A TWI799917B (zh) | 2020-07-21 | 2021-07-19 | 用於半導體處理系統的分配部件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220028710A1 (zh) |
JP (1) | JP2023535018A (zh) |
KR (1) | KR20230039732A (zh) |
CN (1) | CN116137930A (zh) |
TW (1) | TWI799917B (zh) |
WO (1) | WO2022020194A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220020615A1 (en) * | 2020-07-19 | 2022-01-20 | Applied Materials, Inc. | Multiple process semiconductor processing system |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017184223A1 (en) * | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100516844B1 (ko) * | 2001-01-22 | 2005-09-26 | 동경 엘렉트론 주식회사 | 처리 장치 및 처리 방법 |
US6818096B2 (en) * | 2001-04-12 | 2004-11-16 | Michael Barnes | Plasma reactor electrode |
JP4470970B2 (ja) * | 2007-07-31 | 2010-06-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8512509B2 (en) * | 2007-12-19 | 2013-08-20 | Applied Materials, Inc. | Plasma reactor gas distribution plate with radially distributed path splitting manifold |
US20160032451A1 (en) * | 2014-07-29 | 2016-02-04 | Applied Materials, Inc. | Remote plasma clean source feed between backing plate and diffuser |
US10062585B2 (en) * | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10920319B2 (en) * | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
-
2020
- 2020-07-21 US US16/934,227 patent/US20220028710A1/en active Pending
-
2021
- 2021-07-16 WO PCT/US2021/041948 patent/WO2022020194A1/en active Application Filing
- 2021-07-16 KR KR1020237005767A patent/KR20230039732A/ko not_active Application Discontinuation
- 2021-07-16 JP JP2023504265A patent/JP2023535018A/ja active Pending
- 2021-07-16 CN CN202180057838.2A patent/CN116137930A/zh active Pending
- 2021-07-19 TW TW110126377A patent/TWI799917B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017184223A1 (en) * | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
US20170306494A1 (en) * | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
Also Published As
Publication number | Publication date |
---|---|
WO2022020194A1 (en) | 2022-01-27 |
CN116137930A (zh) | 2023-05-19 |
US20220028710A1 (en) | 2022-01-27 |
TW202220086A (zh) | 2022-05-16 |
JP2023535018A (ja) | 2023-08-15 |
KR20230039732A (ko) | 2023-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3698395A4 (en) | SOURCE OF NON-MATCHING PLASMA USED FOR THE MANUFACTURE OF SEMICONDUCTOR SLICES | |
EP3774020A4 (en) | TREATMENT SYSTEMS AND METHODS | |
EP3807921A4 (en) | DIRECT DRIVE RF CIRCUIT FOR SUBSTRATE TREATMENT SYSTEMS | |
EP3891492A4 (en) | CO-LOCATED METROLOGY PROCESSES AND SYSTEMS | |
EP3933939A4 (en) | METHOD OF PROCESSING A PHOTOVOLTAIC MODULE | |
SG11202112854XA (en) | Substrate processing system | |
EP3811050A4 (en) | SYSTEMS AND METHODS FOR PREANALYTIC SUBSTRATE PROCESSING | |
EP3951837A4 (en) | METHOD FOR PROCESSING A SEMICONDUCTOR STRUCTURE | |
EP3926662A4 (en) | PROCESSING SOLUTION CONTAINING ONIUM SALT FOR SEMICONDUCTOR WAFER | |
EP3881328A4 (en) | SYSTEMS AND METHODS FOR BUILDING HIGH THROUGHPUT LINKING LIBRARIES | |
EP4070367A4 (en) | SUBSTRATE PROCESSING APPARATUS | |
TWI799917B (zh) | 用於半導體處理系統的分配部件 | |
EP4186616A4 (en) | PROCESSING SYSTEM | |
TWI799823B (zh) | 半導體處理系統的底部淨化 | |
EP4122637A4 (en) | LASER TREATMENT SYSTEM | |
EP3661343A4 (en) | SUBSTRATE TREATMENT MANAGEMENT SYSTEM | |
EP4237934A4 (en) | REDUNDANT COMMUNICATIONS FOR MULTI-CHIP SYSTEMS | |
EP4088306A4 (en) | SECTORIAL SHUNTS FOR PLASMA-BASED WAFER PROCESSING SYSTEMS | |
EP4094875A4 (en) | PROCESSING SYSTEM | |
EP4023386A4 (en) | TREATMENT SYSTEM | |
EP4190477A4 (en) | PROCESSING SYSTEM | |
IL307987A (en) | Semiconductor processing system | |
EP4007481A4 (en) | SUBSTRATE WORKING SYSTEM | |
EP4139951A4 (en) | METHOD FOR PROCESSING SEMICONDUCTOR WAFER | |
EP4010915A4 (en) | EDGE RING SYSTEMS FOR SUBSTRATE PROCESSING SYSTEMS |