TWI799789B - 霍爾效應感測器裝置以及形成霍爾效應感測器裝置的方法 - Google Patents

霍爾效應感測器裝置以及形成霍爾效應感測器裝置的方法 Download PDF

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Publication number
TWI799789B
TWI799789B TW110104741A TW110104741A TWI799789B TW I799789 B TWI799789 B TW I799789B TW 110104741 A TW110104741 A TW 110104741A TW 110104741 A TW110104741 A TW 110104741A TW I799789 B TWI799789 B TW I799789B
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TW
Taiwan
Prior art keywords
hall effect
sensor devices
effect sensor
methods
forming
Prior art date
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TW110104741A
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English (en)
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TW202201037A (zh
Inventor
孫永順
榮發 卓
萍 鄭
Original Assignee
新加坡商格羅方德半導體私人有限公司
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Publication of TW202201037A publication Critical patent/TW202201037A/zh
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Publication of TWI799789B publication Critical patent/TWI799789B/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/077—Vertical Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
TW110104741A 2020-03-13 2021-02-08 霍爾效應感測器裝置以及形成霍爾效應感測器裝置的方法 TWI799789B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/817,623 US11372061B2 (en) 2020-03-13 2020-03-13 Hall effect sensor devices and methods of forming hall effect sensor devices
US16/817,623 2020-03-13

Publications (2)

Publication Number Publication Date
TW202201037A TW202201037A (zh) 2022-01-01
TWI799789B true TWI799789B (zh) 2023-04-21

Family

ID=77457286

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110104741A TWI799789B (zh) 2020-03-13 2021-02-08 霍爾效應感測器裝置以及形成霍爾效應感測器裝置的方法

Country Status (4)

Country Link
US (1) US11372061B2 (zh)
CN (1) CN113394339B (zh)
DE (1) DE102021102984A1 (zh)
TW (1) TWI799789B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118655431B (zh) * 2024-08-20 2024-10-22 常州驰高电气有限公司 智能局部放电在线监测系统及其监测方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2820211A1 (fr) * 2001-02-01 2002-08-02 Schlumberger Ind Sa Cellule a effet hall pour la mesure de courant efficace
US6492697B1 (en) * 2000-04-04 2002-12-10 Honeywell International Inc. Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset
TW201029107A (en) * 2009-01-30 2010-08-01 Applied Materials Inc Sensor system for semiconductor manufacturing apparatus
US8426936B2 (en) * 2009-03-24 2013-04-23 Austriamicrosystems Ag Vertical Hall sensor and method of producing a vertical Hall sensor
US20130342194A1 (en) * 2012-06-22 2013-12-26 Infineon Technologies Ag Vertical hall sensor with series-connected hall effect regions
US20140070795A1 (en) * 2012-09-13 2014-03-13 Infineon Technologies Ag Hall Effect Device
TW201717227A (zh) * 2015-11-04 2017-05-16 財團法人工業技術研究院 電隔離器構裝結構及電隔離器的製造方法
US10050082B1 (en) * 2017-08-16 2018-08-14 Globalfoundries Singapore Pte. Ltd. Hall element for 3-D sensing using integrated planar and vertical elements and method for producing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8896303B2 (en) * 2011-02-08 2014-11-25 Infineon Technologies Ag Low offset vertical Hall device and current spinning method
DE102011107767A1 (de) 2011-07-15 2013-01-17 Micronas Gmbh Hallsensor
GB2531536A (en) * 2014-10-21 2016-04-27 Melexis Technologies Nv Vertical hall sensors with reduced offset error
US9893119B2 (en) * 2016-03-15 2018-02-13 Texas Instruments Incorporated Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
DE102016114174B4 (de) * 2016-08-01 2019-10-10 Infineon Technologies Ag Hall-sensor-bauelemente und verfahren zum betreiben derselben
US10534045B2 (en) 2017-09-20 2020-01-14 Texas Instruments Incorporated Vertical hall-effect sensor for detecting two-dimensional in-plane magnetic fields

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492697B1 (en) * 2000-04-04 2002-12-10 Honeywell International Inc. Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset
FR2820211A1 (fr) * 2001-02-01 2002-08-02 Schlumberger Ind Sa Cellule a effet hall pour la mesure de courant efficace
TW201029107A (en) * 2009-01-30 2010-08-01 Applied Materials Inc Sensor system for semiconductor manufacturing apparatus
US8426936B2 (en) * 2009-03-24 2013-04-23 Austriamicrosystems Ag Vertical Hall sensor and method of producing a vertical Hall sensor
US20130342194A1 (en) * 2012-06-22 2013-12-26 Infineon Technologies Ag Vertical hall sensor with series-connected hall effect regions
US20140070795A1 (en) * 2012-09-13 2014-03-13 Infineon Technologies Ag Hall Effect Device
TW201717227A (zh) * 2015-11-04 2017-05-16 財團法人工業技術研究院 電隔離器構裝結構及電隔離器的製造方法
US10050082B1 (en) * 2017-08-16 2018-08-14 Globalfoundries Singapore Pte. Ltd. Hall element for 3-D sensing using integrated planar and vertical elements and method for producing the same

Also Published As

Publication number Publication date
US20210286025A1 (en) 2021-09-16
CN113394339B (zh) 2024-04-16
US11372061B2 (en) 2022-06-28
CN113394339A (zh) 2021-09-14
TW202201037A (zh) 2022-01-01
DE102021102984A1 (de) 2021-09-16

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