TWI799386B - Fbar devices including highly crystalline metal nitride films and method of making the same - Google Patents

Fbar devices including highly crystalline metal nitride films and method of making the same Download PDF

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Publication number
TWI799386B
TWI799386B TW106127809A TW106127809A TWI799386B TW I799386 B TWI799386 B TW I799386B TW 106127809 A TW106127809 A TW 106127809A TW 106127809 A TW106127809 A TW 106127809A TW I799386 B TWI799386 B TW I799386B
Authority
TW
Taiwan
Prior art keywords
making
same
devices including
metal nitride
highly crystalline
Prior art date
Application number
TW106127809A
Other languages
Chinese (zh)
Other versions
TW201834278A (en
Inventor
布魯斯 布拉克
山薩塔克 達斯古塔
保羅 費雪
Original Assignee
美商英特爾股份有限公司
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Filing date
Publication date
Application filed by 美商英特爾股份有限公司 filed Critical 美商英特爾股份有限公司
Publication of TW201834278A publication Critical patent/TW201834278A/en
Application granted granted Critical
Publication of TWI799386B publication Critical patent/TWI799386B/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
TW106127809A 2016-09-30 2017-08-16 Fbar devices including highly crystalline metal nitride films and method of making the same TWI799386B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??PCT/US16/54872 2016-09-30
PCT/US2016/054872 WO2018063358A1 (en) 2016-09-30 2016-09-30 Fbar devices including highly crystalline metal nitride films
WOPCT/US16/54872 2016-09-30

Publications (2)

Publication Number Publication Date
TW201834278A TW201834278A (en) 2018-09-16
TWI799386B true TWI799386B (en) 2023-04-21

Family

ID=61763451

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106127809A TWI799386B (en) 2016-09-30 2017-08-16 Fbar devices including highly crystalline metal nitride films and method of making the same

Country Status (2)

Country Link
TW (1) TWI799386B (en)
WO (1) WO2018063358A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102172638B1 (en) * 2018-12-14 2020-11-03 삼성전기주식회사 Acoustic resonator and method of manufacturing thereof
US11431318B2 (en) 2018-12-14 2022-08-30 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method of manufacturing thereof
KR20220014194A (en) * 2020-07-28 2022-02-04 삼성전기주식회사 Bulk-acoustic wave resonator and method for fabricating the same
US20240032429A1 (en) * 2020-10-14 2024-01-25 Agency For Science, Technology And Research Piezoelectric device and method of forming the same
CN112803910A (en) * 2020-12-29 2021-05-14 杭州电子科技大学 Preparation method of single crystal film bulk acoustic resonator
WO2023003840A1 (en) * 2021-07-19 2023-01-26 Massachusetts Institute Of Technology Single crystalline film bulk acoustic resonator and related systems and methods
FR3130102B1 (en) * 2021-12-06 2024-01-12 Commissariat Energie Atomique Volume acoustic wave device and method for producing such a device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030199105A1 (en) * 2002-04-22 2003-10-23 Kub Francis J. Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
US20050035828A1 (en) * 2003-04-07 2005-02-17 Kyoung Je Hong Film bulk acoustic resonator (FBAR) device and method for producing the same
TWI283739B (en) * 2004-12-28 2007-07-11 Delta Electronics Inc FBAR-based sensing apparatus
TWI318469B (en) * 2006-12-28 2009-12-11 Univ Chung Yuan Christian
US20160028367A1 (en) * 2014-07-25 2016-01-28 Akoustis, Inc. Single crystal acoustic resonator and bulk acoustic wave filter

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005236337A (en) * 2001-05-11 2005-09-02 Ube Ind Ltd Thin-film acoustic resonator and method of producing the same
CN101228691B (en) * 2005-08-30 2011-01-05 松下电器产业株式会社 Method of manufacturing piezoelectric resonator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030199105A1 (en) * 2002-04-22 2003-10-23 Kub Francis J. Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
US20050035828A1 (en) * 2003-04-07 2005-02-17 Kyoung Je Hong Film bulk acoustic resonator (FBAR) device and method for producing the same
TWI283739B (en) * 2004-12-28 2007-07-11 Delta Electronics Inc FBAR-based sensing apparatus
TWI318469B (en) * 2006-12-28 2009-12-11 Univ Chung Yuan Christian
US20160028367A1 (en) * 2014-07-25 2016-01-28 Akoustis, Inc. Single crystal acoustic resonator and bulk acoustic wave filter

Also Published As

Publication number Publication date
WO2018063358A1 (en) 2018-04-05
TW201834278A (en) 2018-09-16

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