TWI798995B - Grain growing method of textured ceramics - Google Patents

Grain growing method of textured ceramics Download PDF

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TWI798995B
TWI798995B TW110146800A TW110146800A TWI798995B TW I798995 B TWI798995 B TW I798995B TW 110146800 A TW110146800 A TW 110146800A TW 110146800 A TW110146800 A TW 110146800A TW I798995 B TWI798995 B TW I798995B
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textured
growth method
crystal growth
textured ceramics
customized
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TW202222739A (en
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洪群雄
朱聖緣
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國立高雄師範大學
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Abstract

A grain growing method of textured ceramics includes steps as follow. A raw material mixing step, a tape-casting step, a laminating step, a cutting step, a pressurizing step and a sintering step are performed. Therefore, textured ceramics with different grain growing orientations can be offered by a template with a single crystal orientation and by a single grain growing process and a sintering process.

Description

織構化陶瓷之長晶方法Crystal Growth Method for Textured Ceramics

本發明係關於一種織構化陶瓷之長晶方法,特別是關於一種可調控晶向之織構化陶瓷之長晶方法。The invention relates to a method for growing crystals of textured ceramics, in particular to a method for growing crystals of textured ceramics with adjustable crystal orientation.

織構化陶瓷由於其具有高壓電係數及高機電耦合係數,故可做為傳感器、致動器、變壓器等組件,並廣泛應用於工業控制、環境監控、通訊、資訊系統及醫療器具設備等領域。Textured ceramics can be used as components such as sensors, actuators, and transformers due to their high piezoelectric coefficient and high electromechanical coupling coefficient, and are widely used in industrial control, environmental monitoring, communication, information systems, and medical equipment. field.

製作織構化陶瓷之習知製程為反應模板晶粒生長法,利用特定晶向之鐵電材料作為內核,使陶瓷材料以前述鐵電材料之晶向進行生長並包覆前述之鐵電材料,而形成織構化結構之陶瓷晶體,然反應模板晶粒生長法的缺點在於,需要製作各種不同晶向的織構化陶瓷時須取得各種不同晶向之反應模板,且單一次結晶過程及燒結過程中僅能得到單一種晶向之織構化陶瓷結構,在有製作不同晶向的織構化陶瓷之需求時,容易造成原材料的浪費並耗費大量時間等待結晶與燒結。The conventional process for making textured ceramics is the reaction template grain growth method, which uses a ferroelectric material with a specific crystal orientation as the core, so that the ceramic material grows in the crystal orientation of the aforementioned ferroelectric material and covers the aforementioned ferroelectric material. To form textured ceramic crystals, the disadvantage of the reaction template grain growth method is that it is necessary to obtain a variety of reaction templates with different crystal orientations when making textured ceramics with different crystal orientations, and a single crystallization process and sintering In the process, only a textured ceramic structure with a single crystal orientation can be obtained. When there is a demand for textured ceramics with different crystal orientations, it is easy to cause waste of raw materials and spend a lot of time waiting for crystallization and sintering.

綜上所述,發展一種使用單一種晶向的反應模板及經單一次結晶過程及燒結過程,即可製作出不同晶向的織構化陶瓷的方式,實為一重要的發展目標。To sum up, it is an important development goal to develop a reaction template using a single crystallographic orientation and to produce textured ceramics with different crystallographic orientations through a single crystallization process and sintering process.

本發明之一目的在於提供一種織構化陶瓷之長晶方法,其藉由於習知之反應模板晶粒成長法中增加一裁切步驟,進而達到使用單一種晶向的反應模板及經單一次結晶過程及燒結過程,即可製作出不同晶向的織構化陶瓷的目標。One object of the present invention is to provide a crystal growth method for textured ceramics, by adding a cutting step to the conventional reaction template grain growth method, so as to achieve the use of a reaction template with a single crystal orientation and a single crystallization process Through the process and sintering process, the target of textured ceramics with different crystal orientations can be produced.

本發明之一實施方式提供一種織構化陶瓷之長晶方法,包含一原料混合步驟、一塗布步驟、一堆疊加壓步驟、一裁切步驟、一加壓步驟以及一燒結步驟。原料混合步驟係混合一活性物質、一黏著劑、一溶劑以及一反應模板,以形成一混合漿料。塗布步驟係將混合漿料塗布於一平面,以形成一平面結構。堆疊加壓步驟係將複數個平面結構堆疊至一堆疊厚度,以形成一立體結構。裁切步驟係以一裁切方向裁切立體結構,以形成一客製化結構。加壓步驟係對客製化結構各向施壓,以形成一緊密的客製化結構。燒結步驟係以一燒結溫度燒結緊密的客製化結構,以形成一織構化陶瓷。One embodiment of the present invention provides a crystal growth method of textured ceramics, which includes a raw material mixing step, a coating step, a stacking and pressing step, a cutting step, a pressing step and a sintering step. The raw material mixing step is to mix an active material, a binder, a solvent and a reaction template to form a mixed slurry. The coating step is coating the mixed slurry on a plane to form a plane structure. The stacking and pressing step is stacking a plurality of planar structures to a stacking thickness to form a three-dimensional structure. The cutting step is to cut the three-dimensional structure in a cutting direction to form a customized structure. The pressurizing step applies pressure to the customized structure in all directions to form a compact customized structure. The sintering step is to sinter the compact customized structure at a sintering temperature to form a textured ceramic.

依據前述實施方式之織構化陶瓷之長晶方法,其中活性物質可為一陶瓷粉末,黏著劑可為一高分子,溶劑可為一有機溶劑。According to the crystal growth method of textured ceramics in the aforementioned embodiments, the active material can be a ceramic powder, the binder can be a polymer, and the solvent can be an organic solvent.

依據前述實施方式之織構化陶瓷之長晶方法,其中反應模板可為一鐵電材料。According to the crystal growth method of textured ceramics in the aforementioned embodiments, the reaction template can be a ferroelectric material.

依據前述實施方式之織構化陶瓷之長晶方法,其中鐵電材料可為一平板狀結構。According to the crystal growth method of textured ceramics in the aforementioned embodiments, the ferroelectric material can be a flat plate structure.

依據前述實施方式之織構化陶瓷之長晶方法,其中燒結溫度可為800 oC至1700 oC。 According to the crystal growth method of textured ceramics in the foregoing embodiments, the sintering temperature may be 800 ° C to 1700 ° C.

本發明之另一實施方式提供一種織構化陶瓷之長晶方法,包含一原料混合步驟、一塗布步驟、一堆疊加壓步驟、一裁切步驟、一內電極塗布步驟、一堆疊步驟、一加壓步驟以及一燒結步驟。原料混合步驟係混合一活性物質、一黏著劑、一溶劑以及一反應模板,以形成一混合漿料。塗布步驟係將混合漿料塗布於一平面,以形成一平面結構。堆疊加壓步驟係將複數個平面結構堆疊至一堆疊厚度,以形成一立體結構。裁切步驟係以一裁切方向裁切立體結構,以形成一客製化結構。內電極塗布步驟係將一內電極塗布於客製化結構之至少一表面,以形成一客製化內電極。堆疊步驟係將複數個客製化內電極彼此堆疊,以形成一多層結構。加壓步驟係對多層結構各向施壓,以形成一緊密的多層結構。燒結步驟係以一燒結溫度燒結緊密的多層結構,以形成一織構化陶瓷。Another embodiment of the present invention provides a method for growing crystals of textured ceramics, which includes a raw material mixing step, a coating step, a stacking and pressing step, a cutting step, an internal electrode coating step, a stacking step, a A pressing step and a sintering step. The raw material mixing step is to mix an active material, a binder, a solvent and a reaction template to form a mixed slurry. The coating step is coating the mixed slurry on a plane to form a plane structure. The stacking and pressing step is stacking a plurality of planar structures to a stacking thickness to form a three-dimensional structure. The cutting step is to cut the three-dimensional structure in a cutting direction to form a customized structure. The internal electrode coating step is coating an internal electrode on at least one surface of the customized structure to form a customized internal electrode. The stacking step is stacking a plurality of customized internal electrodes to form a multi-layer structure. The pressing step is to apply pressure to the multi-layer structure to form a compact multi-layer structure. The sintering step is to sinter the compact multilayer structure at a sintering temperature to form a textured ceramic.

依據前述另一實施方式之織構化陶瓷之長晶方法,其中活性物質可為一陶瓷粉末,黏著劑可為一高分子,溶劑可為一有機溶劑。According to the crystal growth method of textured ceramics in another embodiment, the active material can be a ceramic powder, the binder can be a polymer, and the solvent can be an organic solvent.

依據前述另一實施方式之織構化陶瓷之長晶方法,其中反應模板可為一鐵電材料。According to the method for growing textured ceramics in another embodiment, the reaction template can be a ferroelectric material.

依據前述另一實施方式之織構化陶瓷之長晶方法,其中鐵電材料可為一平板狀結構。According to the crystal growth method of textured ceramics in another embodiment, the ferroelectric material can be a flat plate structure.

依據前述另一實施方式之織構化陶瓷之長晶方法,其中燒結溫度可為800 oC至1700 oC。 According to the crystal growth method of textured ceramics according to another embodiment above, the sintering temperature can be 800 ° C to 1700 ° C.

藉此,可達成使用單一種晶向的反應模板及經單一次結晶過程及燒結過程,即製作出不同晶向的織構化陶瓷。In this way, textured ceramics with different crystal orientations can be produced by using a reaction template with a single crystal orientation and through a single crystallization process and sintering process.

以下將參照圖式說明本發明之複數個實施例。為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施例中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之;並且重複之元件將可能使用相同的編號表示之。Several embodiments of the present invention will be described below with reference to the drawings. For the sake of clarity, many practical details are included in the following narrative. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some commonly used structures and elements will be shown in a simple and schematic way in the drawings; and repeated elements may be denoted by the same reference numerals.

請參照第1圖、第2A圖、第2B圖、第2C圖、第2D圖及第2E圖,第1圖係繪示本發明一實施方式之織構化陶瓷之長晶方法100之步驟流程圖,第2A圖至第2E圖係繪示第1圖之織構化陶瓷之長晶方法100之示意圖。織構化陶瓷之長晶方法100包含步驟110、步驟120、步驟130、步驟140、步驟150以及步驟160,第2A圖為步驟110的示意圖,第2B圖為步驟120的示意圖,第2C圖及2D圖為步驟130的示意圖,第2E圖為步驟140的示意圖。Please refer to Fig. 1, Fig. 2A, Fig. 2B, Fig. 2C, Fig. 2D and Fig. 2E. Fig. 1 shows the steps of the method 100 for growing textured ceramics according to an embodiment of the present invention. 2A to 2E are diagrams illustrating a crystal growth method 100 for textured ceramics in FIG. 1 . The crystal growth method 100 of textured ceramics includes step 110, step 120, step 130, step 140, step 150, and step 160. Figure 2A is a schematic diagram of step 110, Figure 2B is a schematic diagram of step 120, and Figure 2C and Figure 2D is a schematic diagram of step 130, and Figure 2E is a schematic diagram of step 140.

第1圖搭配第2A圖,步驟110為一原料混合步驟,其係以一混合方式混合一活性物質、一黏著劑、一溶劑以及一反應模板211,以形成一混合漿料210。詳細來說,前述之活性物質可為一陶瓷粉末,其可為(Na,K)(Nb,Sb)O 3或(Ba,Ca)(Zr,Ti)O 3,前述之黏著劑可為一高分子,其可為加壓成形時增強活性物質黏性之物質,例如聚乙烯醇(Polyvinyl alcohol)。前述之溶劑可為一有機溶劑,其可為使陶瓷體粉末、模板、黏著劑充分溶解混合之物質,例如乙醇或甲苯。反應模板211可為一鐵電材料,其可為鈦酸鋇(BaTiO 3)或鈮酸鈉(NaNbO 3),但本發明不以此為限。 In FIG. 1 and FIG. 2A , step 110 is a raw material mixing step, which is to mix an active material, an adhesive, a solvent and a reaction template 211 in a mixing manner to form a mixed slurry 210 . Specifically, the aforementioned active material can be a ceramic powder, which can be (Na, K)(Nb, Sb)O 3 or (Ba, Ca)(Zr,Ti)O 3 , and the aforementioned binder can be a Macromolecule, which can be a substance that enhances the viscosity of the active substance during press molding, such as polyvinyl alcohol (Polyvinyl alcohol). The aforesaid solvent can be an organic solvent, which can fully dissolve and mix the ceramic body powder, template, and adhesive, such as ethanol or toluene. The reaction template 211 can be a ferroelectric material, which can be barium titanate (BaTiO 3 ) or sodium niobate (NaNbO 3 ), but the invention is not limited thereto.

詳細來說,混合漿料210包含反應模板211及一混合物212,其中混合物212由前述之活性物質、前述之黏著劑、前述之溶劑混合而成,巨觀而言為一均勻相。Specifically, the mixed slurry 210 includes a reaction template 211 and a mixture 212, wherein the mixture 212 is formed by mixing the aforementioned active material, the aforementioned adhesive, and the aforementioned solvent, and macroscopically, it is a homogeneous phase.

詳細來說,前述之混合方式可以磁棒攪拌,但本發明不以此為限,特別說明的是,攪拌時須注意以不粉碎反應模板211為原則。In detail, the aforementioned mixing method can be stirred with a magnetic bar, but the present invention is not limited thereto. In particular, attention should be paid to the principle of not crushing the reaction template 211 during stirring.

特別說明的是,於習知之反應模板晶粒成長法中,織構化陶瓷的晶向係由添加之反應模板的晶向而定,然本發明之織構化陶瓷的晶向並非單純由前述之反應模板的晶向而定,故於本發明中反應模板的晶向可為任意晶向。In particular, in the conventional reaction template grain growth method, the crystal orientation of the textured ceramics is determined by the crystal orientation of the added reaction template, but the crystal orientation of the textured ceramics of the present invention is not simply determined by the aforementioned It depends on the crystal orientation of the reaction template, so in the present invention, the crystal orientation of the reaction template can be any crystal orientation.

第1圖搭配第2B圖,步驟120為一塗布步驟,其係將混合漿料210塗布於一平面,以形成一平面結構220。詳細來說,步驟120之塗布步驟可為一刮刀成型製程,其具有一刮刀221及一進料口222,於塗布時,混合漿料210由進料口222倒入並接觸一平面(未有標號),刮刀221之一側懸空於前述之平面並沿一塗布方向(圖未標示)進行移動,並於前述之平面上形成平面結構220,同時刮去多餘的混合漿料210,但本發明不以此為限。In FIG. 1 and FIG. 2B , step 120 is a coating step, which is to coat the mixed slurry 210 on a plane to form a plane structure 220 . In detail, the coating step of step 120 can be a scraper forming process, which has a scraper 221 and a feed port 222, and when coating, the mixed slurry 210 is poured into and contacts a plane (without the feed port 222). label), one side of the scraper 221 is suspended on the aforementioned plane and moves along a coating direction (not shown in the figure), and forms a planar structure 220 on the aforementioned plane, and scrapes off excess mixed slurry 210 at the same time, but the present invention This is not the limit.

詳細來說,刮刀221之一側懸空於前述之平面一高度H,藉由刮刀221沿前述之塗布方向的移動,於刮刀221之移動路徑上塗布形成平面結構220,其中高度H即為平面結構220之一塗布厚度L1。In detail, one side of the scraper 221 is suspended above the aforementioned plane with a height H. By moving the scraper 221 along the aforementioned coating direction, the planar structure 220 is coated on the moving path of the scraper 221, wherein the height H is the planar structure One of 220 is coated with a thickness L1.

詳細來說,塗布厚度L1需視塗布機台、反應模板211及混合漿料210之材料特性而定,一般而言,塗布厚度L1可為100 µm以下,較佳地,可為20 µm,但本發明不以此為限。In detail, the coating thickness L1 depends on the material properties of the coating machine, the reaction template 211 and the mixed slurry 210. Generally speaking, the coating thickness L1 can be less than 100 µm, preferably 20 µm, but The present invention is not limited thereto.

特別說明的是,甫完成混合之混合漿料210中,反應模板211並無均一地朝向特定之一方向,然經刮刀221塗布後,反應模板211會均一地朝向一水平方向排列於平面結構220中。It is particularly noted that in the mixed slurry 210 that has just been mixed, the reaction templates 211 are not uniformly oriented in a specific direction, but after being coated by the doctor blade 221, the reaction templates 211 will be uniformly arranged in a horizontal direction on the planar structure 220 middle.

第1圖搭配第2C圖及2D圖,步驟130為一堆疊加壓步驟,其係將複數個平面結構220垂直堆疊至一堆疊厚度L2後進行加壓,以形成一立體結構230。詳細來說,前述之堆疊厚度L2可為大於0 µm至任意厚度。In FIG. 1 and FIG. 2C and FIG. 2D , step 130 is a stacking and pressing step, which involves vertically stacking a plurality of planar structures 220 to a stacking thickness L2 and then pressing to form a three-dimensional structure 230 . In detail, the aforementioned stack thickness L2 can be greater than 0 μm to any thickness.

詳細來說,堆疊厚度L2須滿足可供裁切成各式元件中所需要之形狀,故前述之堆疊厚度L2應視後續加工製程中,織構化陶瓷所應用之元件而定。Specifically, the stacking thickness L2 must meet the required shapes for cutting into various components, so the aforementioned stacking thickness L2 should depend on the components used for the textured ceramics in the subsequent processing process.

詳細來說,一重物231可被放置於最上層之平面結構220之上,藉由重物231之重量施加一壓力,以增加複數個平面結構220彼此間的緊密性,以利後續步驟進行。In detail, a weight 231 can be placed on the uppermost planar structure 220 , and the weight of the weight 231 can exert a pressure to increase the compactness among the plurality of planar structures 220 to facilitate subsequent steps.

特別說明的是,各平面結構220尚未經過燒結,因此由混合漿料210形成之各平面結構220並非堅硬之固體狀,故於步驟130中對複數個平面結構220進行加壓後形成之立體結構230具有一厚度L3,其中L2≥L3。It is particularly noted that each planar structure 220 has not been sintered, so each planar structure 220 formed by the mixed slurry 210 is not a hard solid, so the three-dimensional structure formed after pressing the plurality of planar structures 220 in step 130 230 has a thickness L3, wherein L2≧L3.

第1圖搭配第2E圖,步驟140為一裁切步驟,其係以一裁切方向A裁切前述之立體結構230,以形成一客製化結構240。In FIG. 1 and FIG. 2E , step 140 is a cutting step, which is to cut the aforementioned three-dimensional structure 230 in a cutting direction A to form a customized structure 240 .

具體來說,客製化結構240具有一厚度D及一寬度L4,詳細來說,厚度D即為元件所需之織構化陶瓷厚度,寬度L4即為元件所需之織構化陶瓷寬度,故厚度D及寬度L4應視後續加工製程中,織構化陶瓷所應用之元件而定。Specifically, the customized structure 240 has a thickness D and a width L4. Specifically, the thickness D is the thickness of the textured ceramic required by the device, and the width L4 is the width of the textured ceramic required by the device. Therefore, the thickness D and the width L4 should depend on the components used in the textured ceramics in the subsequent processing.

詳細來說,前述之裁切方向A可為任意方向,藉此,可因應不同壓電性能或介電性能需求之元件,裁切出具有特定晶向之客製化結構240。In detail, the aforementioned cutting direction A can be any direction, so that the customized structure 240 with a specific crystal orientation can be cut out in response to elements with different piezoelectric performance or dielectric performance requirements.

步驟150為一加壓步驟,其係對客製化結構240各向施壓,以形成一緊密的客製化結構(圖未標示),詳細來說,可以熱水均壓方式對客製化結構240各向施壓,但本發明不以此為限。Step 150 is a pressurization step, which is to pressurize the customized structure 240 in all directions to form a compact customized structure (not shown in the figure). The structure 240 exerts pressure in all directions, but the invention is not limited thereto.

步驟160為一燒結步驟,其係以一燒結溫度燒結前述之緊密的客製化結構,以形成一織構化陶瓷(圖未標示)。詳細來說,前述之燒結溫度可為800 oC至1700 oC。 Step 160 is a sintering step, which is to sinter the aforementioned compact customized structure at a sintering temperature to form a textured ceramic (not shown). Specifically, the aforementioned sintering temperature may be 800 ° C to 1700 ° C.

詳細來說,燒結之溫度需視不同的活性物質及反應模板而定,舉例來說,(Ba,Ca)(Zr,Ti)O 3陶瓷粉末搭配BaTiO 3反應模板之燒結溫度約為攝氏溫度1400 oC,(Na,K)(Nb,Sb)O 3陶瓷粉末搭配NaNbO 3反應模板之燒結溫度約為攝氏溫度1200 oC,但本發明不以此為限。 In detail, the sintering temperature depends on different active materials and reaction templates. For example, the sintering temperature of (Ba,Ca)(Zr,Ti)O 3 ceramic powder with BaTiO 3 reaction template is about 1400 degrees Celsius o C, the sintering temperature of (Na,K)(Nb,Sb)O 3 ceramic powder and NaNbO 3 reaction template is about 1200 o C, but the present invention is not limited thereto.

藉此,本發明之織構化陶瓷之長晶方法100透過堆疊加壓後,於燒結前將立體結構依所需之晶向裁切,以達成使用單一種晶向的反應模板及經單一次結晶過程,即製作出不同晶向的織構化陶瓷。In this way, the crystal growth method 100 for textured ceramics of the present invention cuts the three-dimensional structure according to the required crystal orientation before sintering after stacking and pressing, so as to achieve the use of a single crystal orientation reaction template and a single process The crystallization process is to produce textured ceramics with different crystal orientations.

請參照第3圖、第4A圖及第4B圖,第3圖係繪示本發明另一實施方式之織構化陶瓷之長晶方法300之步驟流程圖,第4A圖及第4B圖係繪示第3圖之織構化陶瓷之長晶方法300之示意圖。織構化陶瓷之長晶方法300包含步驟310、步驟320、步驟330、步驟340、步驟350、步驟360、步驟370及步驟380。第4A圖為步驟350的示意圖,第4B圖為步驟360的示意圖。Please refer to Fig. 3, Fig. 4A and Fig. 4B. Fig. 3 is a flow chart showing the steps of a crystal growth method 300 for textured ceramics according to another embodiment of the present invention, and Fig. 4A and Fig. 4B are drawn A schematic diagram of a crystal growth method 300 for textured ceramics shown in FIG. 3 is shown. The crystal growth method 300 of textured ceramics includes step 310 , step 320 , step 330 , step 340 , step 350 , step 360 , step 370 and step 380 . FIG. 4A is a schematic diagram of step 350 , and FIG. 4B is a schematic diagram of step 360 .

步驟310為一原料混合步驟,其係以一混合方式混合一活性物質、一黏著劑、一溶劑以及一反應模板,以形成一混合漿料。步驟310的其他細節與步驟110相似,在此不另贅述。Step 310 is a raw material mixing step, which is to mix an active material, a binder, a solvent and a reaction template in a mixing manner to form a mixed slurry. Other details of step 310 are similar to step 110 and will not be repeated here.

步驟320為一塗布步驟,其係將前述之混合漿料塗布於一平面,以形成一平面結構。步驟320的其他細節與步驟120相似,在此不另贅述。Step 320 is a coating step, which is coating the aforementioned mixed slurry on a plane to form a plane structure. Other details of step 320 are similar to step 120 and will not be repeated here.

步驟330為一堆疊加壓步驟,其係將複數個平面結構垂直堆疊至一堆疊厚度後進行加壓,以形成一立體結構。步驟330的其他細節與步驟130相似,在此不另贅述。Step 330 is a stacking and pressing step, which involves vertically stacking a plurality of planar structures to a stack thickness and then pressing to form a three-dimensional structure. Other details of step 330 are similar to step 130 and will not be repeated here.

第3圖搭配第4A圖,步驟340為一裁切步驟,其係以一裁切方向裁切前述之立體結構,以形成一客製化結構440。步驟340的其他細節與步驟140相似,在此不另贅述。In FIG. 3 and FIG. 4A , step 340 is a cutting step, which is to cut the aforementioned three-dimensional structure in a cutting direction to form a customized structure 440 . Other details of step 340 are similar to step 140 and will not be repeated here.

步驟350為一內電極塗布步驟,其係將一內電極441塗布於客製化結構440之至少一表面,以形成一客製化內電極450,詳細來說,內電極441可由銀、銅、鎳、鉑等金屬或其混合物組成,但本發明不以此為限。Step 350 is an internal electrode coating step, which is to coat an internal electrode 441 on at least one surface of the customized structure 440 to form a customized internal electrode 450. Specifically, the internal electrode 441 can be made of silver, copper, Nickel, platinum and other metals or their mixtures, but the present invention is not limited thereto.

第3圖搭配第4B圖,步驟360為一堆疊步驟,其係將複數個客製化內電極450彼此堆疊至一厚度L5,形成一多層結構460,詳細來說,厚度L5即為元件所需之織構化陶瓷厚度,故厚度L5應視後續加工製程中,織構化陶瓷所應用之元件而定。In FIG. 3 and FIG. 4B, step 360 is a stacking step, which is to stack a plurality of customized internal electrodes 450 to a thickness L5 to form a multi-layer structure 460. In detail, the thickness L5 is the thickness of the device. The thickness of the textured ceramics is required, so the thickness L5 should be determined by the components used in the subsequent processing of the textured ceramics.

步驟370為一加壓步驟,其係對多層結構460各向施壓,形成一緊密的多層結構,詳細來說,可以熱水均壓方式對多層結構460各向施壓,但本發明不以此為限。Step 370 is a pressurization step, which applies pressure to the multi-layer structure 460 in all directions to form a compact multi-layer structure. This is the limit.

步驟380為一燒結步驟,其係以一燒結溫度燒結前述之緊密的多層結構,以形成一織構化陶瓷(圖未標示)。詳細來說,前述之燒結溫度可為800 oC至1700 oC。步驟380的其他細節與步驟160相似,在此不另贅述。 Step 380 is a sintering step, which is to sinter the aforementioned compact multilayer structure at a sintering temperature to form a textured ceramic (not shown). Specifically, the aforementioned sintering temperature may be 800 ° C to 1700 ° C. Other details of step 380 are similar to step 160 and will not be repeated here.

藉此,本發明之織構化陶瓷之長晶方法300透過堆疊加壓後,於燒結前將立體結構依所需之晶向裁切,以達成使用單一種晶向的反應模板及經單一次結晶過程,即製作出多層且不同晶向的織構化陶瓷。In this way, the textured ceramic crystal growth method 300 of the present invention cuts the three-dimensional structure according to the required crystal orientation before sintering after stacking and pressing, so as to achieve a reaction template using a single crystal orientation and a single process The crystallization process is to produce textured ceramics with multiple layers and different crystal orientations.

以下試驗例係為測試並證明本發明之織構化陶瓷之長晶方法可經使用單一種晶向的反應模板及經單一次結晶過程,即製作出多層且不同晶向的織構化陶瓷。詳細來說,於以下試驗例中,所使用之活性物質為BCTSHML陶瓷粉末,所述BCTSHML陶瓷粉末為(Ba,Ca)(Ti,Sn,Hf)O 3、二氧化錳(MnO 2)及碳酸鋰(Li 2CO 3)之混合物,所使用之黏著劑為聚乙烯醇,所使用之有機溶劑為乙醇,所使用之反應模板材質為BaTiO 3The following test examples are to test and prove that the crystal growth method of textured ceramics of the present invention can produce multi-layered textured ceramics with different crystal orientations through a single crystallization process using a reaction template with a single crystal orientation. In detail, in the following test examples, the active material used is BCTSHML ceramic powder, the BCTSHML ceramic powder is (Ba, Ca) (Ti, Sn, Hf) O 3 , manganese dioxide (MnO 2 ) and carbonic acid For the mixture of lithium (Li 2 CO 3 ), the binder used is polyvinyl alcohol, the organic solvent used is ethanol, and the reaction template material used is BaTiO 3 .

具體來說,BCTSHML陶瓷粉末之製作方式簡述如下:將碳酸鋇(BaCO 3)、碳酸鈣(CaCO 3)、二氧化鈦(TiO 2)、二氧化錫(SnO 2)及二氧化鉿(HfO 2)之粉末混合並研磨後進行鍛燒(calcination)得到(Ba,Ca)(Ti,Sn,Hf)O 3,隨後再加入MnO 2及Li 2CO 3之粉末進行混合並研磨,以得到BCTSHML陶瓷粉末。 Specifically, the production method of BCTSHML ceramic powder is briefly described as follows: barium carbonate (BaCO 3 ), calcium carbonate (CaCO 3 ), titanium dioxide (TiO 2 ), tin dioxide (SnO 2 ) and hafnium dioxide (HfO 2 ) The powders are mixed and ground and then calcined to obtain (Ba,Ca)(Ti,Sn,Hf)O 3 , then MnO 2 and Li 2 CO 3 powders are added for mixing and grinding to obtain BCTSHML ceramic powder .

具體來說,BaTiO 3反應模板之製作方式簡述如下:將三氧化二鉍(Bi 2O 3)及TiO 2研磨並混合後,以氯化鈉(NaCl)進行熔鹽法合成並鍛燒得到鈦酸鉍(Bi 4Ti 3O 12),再將Bi 4Ti 3O 12與TiO 2及BaCO 3混合後,以熔鹽法合成BaTiO 3之反應模板。前述之熔鹽法為一種化學合成方法,其係以低熔點的鹽類作為反應介質,以利化學反應可在溫度較低的環境下進行,熔鹽法於化學合成領域中為習用之合成方法,故其細節在此不另贅述,本發明所可使用之反應模板也不以此合成方式為限。 Specifically, the production method of the BaTiO 3 reaction template is briefly described as follows: After grinding and mixing bismuth trioxide (Bi 2 O 3 ) and TiO 2 , they are synthesized by molten salt method with sodium chloride (NaCl) and calcined to obtain Bismuth titanate (Bi 4 Ti 3 O 12 ), and after mixing Bi 4 Ti 3 O 12 with TiO 2 and BaCO 3 , the reaction template of BaTiO 3 was synthesized by molten salt method. The aforementioned molten salt method is a chemical synthesis method, which uses salts with low melting points as the reaction medium, so that chemical reactions can be carried out in a lower temperature environment. The molten salt method is a commonly used synthetic method in the field of chemical synthesis. , so its details will not be repeated here, and the reaction templates that can be used in the present invention are not limited to this synthesis method.

後續將BCTSHML陶瓷粉末及BaTiO 3之反應模板以本發明之織構化陶瓷之長晶方法進行織構化陶瓷的製作,並於裁切步驟時以不同角度之裁切方向進行裁切且於燒結步驟中以1350 oC之燒結溫度進行燒結,以分別得到試驗例1、試驗例2及試驗例3,再以X光繞射儀(X-ray diffractometer, XRD)對各試驗例進行晶體結構測定,以驗證本發明之織構化陶瓷之長晶方法可經使用單一種晶向的反應模板及經單一次結晶過程,即製作出多層且不同晶向的織構化陶瓷。 Subsequently, the reaction template of BCTSHML ceramic powder and BaTiO 3 is used for the production of textured ceramics by the crystal growth method of textured ceramics of the present invention, and is cut in different angles of cutting directions during the cutting step and sintered In the step, sintering was carried out at a sintering temperature of 1350 o C to obtain Test Example 1, Test Example 2, and Test Example 3, and then X-ray diffractometer (XRD) was used to determine the crystal structure of each test example , to verify that the crystal growth method of textured ceramics of the present invention can produce multilayer textured ceramics with different crystal orientations by using a reaction template with a single crystal orientation and a single crystallization process.

請參照第5圖,其為本發明各試驗例之X光繞射數據圖。由第5圖可見,在未加入反應模板即對BCTSHML陶瓷粉末進行燒結所得到的陶瓷晶體於(100)、(110)、(111)、(200)、(002)、(210)及(211)等晶面具有明顯的繞射峰訊號;試驗例1係以平行於BaTiO 3反應模板之方向進行裁切而得之陶瓷晶體,其在(100)、(200)及(002)等晶面具有明顯的繞射峰訊號;試驗例2係以對BaTiO 3反應模板呈45 o夾角之方向進行裁切而得之陶瓷晶體,其在(110)、(111)及(211)等晶面具有明顯的繞射峰訊號;試驗例3係以垂直於BaTiO 3反應模板之方向進行裁切而得之陶瓷晶體,其在(100)、(110)、(200)、(002)等晶面具有明顯的繞射峰訊號。綜合以上結果,試驗例1、試驗例2及試驗例3所具有之晶面各不相同,而晶向為垂直於晶面之向量,意即試驗例1、試驗例2及試驗例3所具有之晶向也各不相同,顯示本發明之織構化陶瓷之長晶方法可經使用單一種晶向的反應模板及經單一次結晶過程,即有效地製作出多層且不同晶向的織構化陶瓷,此外亦可搭配內電極進行元件製作,而得到具有不同電性的各式元件。 Please refer to Fig. 5, which is a diagram of X-ray diffraction data of various test examples of the present invention. As can be seen from Figure 5, the ceramic crystals obtained by sintering the BCTSHML ceramic powder without adding a reaction template are at (100), (110), (111), (200), (002), (210) and (211 ) and other crystal planes have obvious diffraction peak signals; Test Example 1 is a ceramic crystal obtained by cutting in a direction parallel to the BaTiO 3 reaction template, and its crystal planes (100), (200) and (002) There are obvious diffraction peak signals; Test Example 2 is a ceramic crystal obtained by cutting the BaTiO 3 reaction template at an angle of 45 o , which has Obvious diffraction peak signal; Test Example 3 is a ceramic crystal cut in the direction perpendicular to the BaTiO 3 reaction template, which has Obvious diffraction peak signal. Based on the above results, the crystal planes of Test Example 1, Test Example 2 and Test Example 3 are different, and the crystal orientation is a vector perpendicular to the crystal plane, which means that Test Example 1, Test Example 2 and Test Example 3 have The crystal orientations are also different, showing that the crystal growth method of the textured ceramics of the present invention can effectively produce multi-layer textures with different crystal orientations by using a single crystal orientation reaction template and a single crystallization process In addition, it can also be used to manufacture components with internal electrodes to obtain various components with different electrical properties.

綜上所述,本發明之織構化陶瓷之長晶方法藉由對活性材料於燒結前進行裁切,以達成可經使用單一種晶向的反應模板及經單一次結晶過程,即製作出多層且不同晶向的織構化陶瓷,相對於習知製作不同晶向的織構化陶瓷之製程,本發明之織構化陶瓷之長晶方法的製程繁複性大幅下降,亦可減少製程成本及原料的浪費,此外,更能搭配內電極製成具有不同電性的各式元件,故於各領域均可具有廣泛的應用。To sum up, the crystal growth method of textured ceramics of the present invention cuts the active material before sintering, so that it can be produced by using a reaction template with a single crystal orientation and a single crystallization process. Multi-layer textured ceramics with different crystal orientations. Compared with the conventional manufacturing process of textured ceramics with different crystal orientations, the complexity of the crystal growth method of the textured ceramics of the present invention is greatly reduced, and the process cost can also be reduced. and the waste of raw materials. In addition, it can be combined with internal electrodes to make various components with different electrical properties, so it can be widely used in various fields.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed above in terms of implementation, it is not intended to limit the present invention. Anyone skilled in this art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be defined by the appended patent application scope.

100,300:織構化陶瓷之長晶方法 110,120,130,140,150,160,310,320,330,340,350,360,370,380:步驟 210:混合漿料 211:反應模板 212:混合物 220:平面結構 221:刮刀 222:進料口 230:立體結構 231:重物 240,440:客製化結構 441:內電極 450:客製化內電極 460:多層結構 A:裁切方向 H:高度 L1:塗布厚度 L2:堆疊厚度 D,L3,L5:厚度 L4:寬度 100,300: Crystal growth method of textured ceramics 110,120,130,140,150,160,310,320,330,340,350,360,370,380: steps 210: mixed slurry 211:Reaction template 212: Mixture 220: planar structure 221: scraper 222: feed port 230: Three-dimensional structure 231: heavy objects 240,440: Customized structures 441: inner electrode 450: Customized internal electrodes 460: multi-layer structure A: Cutting direction H: height L1: coating thickness L2: stack thickness D, L3, L5: Thickness L4: width

為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下: 第1圖係繪示本發明一實施方式之織構化陶瓷之長晶方法之步驟流程圖; 第2A圖、第2B圖、第2C圖、第2D圖及第2E圖係繪示第1圖之織構化陶瓷之長晶方法的步驟之示意圖; 第3圖係繪示本發明另一實施方式之織構化陶瓷之長晶方法之步驟流程圖; 第4A圖及第4B圖係繪示第3圖之織構化陶瓷之長晶方法的步驟之示意圖;以及 第5圖為本發明各試驗例之X光繞射數據圖。 In order to make the above and other objects, features, advantages and embodiments of the present invention more clearly understood, the accompanying drawings are described as follows: Figure 1 is a flow chart showing the steps of a crystal growth method for textured ceramics according to an embodiment of the present invention; Fig. 2A, Fig. 2B, Fig. 2C, Fig. 2D and Fig. 2E are schematic diagrams showing the steps of the crystal growth method of textured ceramics in Fig. 1; Fig. 3 is a flow chart showing the steps of the crystal growth method of textured ceramics according to another embodiment of the present invention; Figure 4A and Figure 4B are schematic diagrams illustrating the steps of the crystal growth method for textured ceramics in Figure 3; and Fig. 5 is a diagram of X-ray diffraction data of various test examples of the present invention.

100:織構化陶瓷之長晶方法 100: Crystal growth method of textured ceramics

110,120,130,140,150,160:步驟 110,120,130,140,150,160: steps

Claims (10)

一種織構化陶瓷之長晶方法,包含:一原料混合步驟,係混合一活性物質、一黏著劑、一溶劑以及一反應模板,以形成一混合漿料;一塗布步驟,係將該混合漿料塗布於一平面,以形成一平面結構;一堆疊加壓步驟,係將複數個平面結構堆疊至一堆疊厚度,以形成一立體結構;一裁切步驟,係以不同角度之一裁切方向裁切該立體結構,以形成一客製化結構;一加壓步驟,係對該客製化結構各向施壓,以形成一緊密的客製化結構;以及一燒結步驟,係以一燒結溫度燒結該緊密的客製化結構,以形成一織構化陶瓷。 A method for growing crystals of textured ceramics, comprising: a raw material mixing step of mixing an active material, an adhesive, a solvent and a reaction template to form a mixed slurry; a coating step of mixing the mixed slurry The material is coated on a plane to form a plane structure; a stacking step is to stack a plurality of plane structures to a stack thickness to form a three-dimensional structure; a cutting step is to use a cutting direction at different angles cutting the three-dimensional structure to form a customized structure; a pressing step is to press the customized structure in all directions to form a compact customized structure; and a sintering step is to sinter The temperature sinters the dense customized structure to form a textured ceramic. 如請求項1所述之織構化陶瓷之長晶方法,其中該活性物質為一陶瓷粉末,該黏著劑為一高分子,該溶劑為一有機溶劑。 The crystal growth method of textured ceramics as described in Claim 1, wherein the active material is a ceramic powder, the binder is a polymer, and the solvent is an organic solvent. 如請求項1所述之織構化陶瓷之長晶方法,其中該反應模板為一鐵電材料。 The crystal growth method of textured ceramics as claimed in claim 1, wherein the reaction template is a ferroelectric material. 如請求項3所述之織構化陶瓷之長晶方法,其中該鐵電材料為一平板狀結構。 The crystal growth method of textured ceramics as claimed in claim 3, wherein the ferroelectric material is a flat plate structure. 如請求項1所述之織構化陶瓷之長晶方法,其中該燒結溫度為800℃至1700℃。 The crystal growth method of textured ceramics according to Claim 1, wherein the sintering temperature is 800°C to 1700°C. 一種織構化陶瓷之長晶方法,包含:一原料混合步驟,係混合一活性物質、一黏著劑、一溶劑以及一反應模板,以形成一混合漿料;一塗布步驟,係將該混合漿料塗布於一平面,以形成一平面結構;一堆疊加壓步驟,係將複數個該平面結構堆疊至一堆疊厚度,以形成一立體結構;一裁切步驟,係以不同角度之一裁切方向裁切該立體結構,以形成一客製化結構;一內電極塗布步驟,係將一內電極塗布於該客製化結構之至少一表面,以形成一客製化內電極;一堆疊步驟,係將複數個該客製化內電極彼此堆疊,以形成一多層結構;一加壓步驟,係對該多層結構各向施壓,以形成一緊密的多層結構;以及一燒結步驟,係以一燒結溫度燒結該緊密的多層結構,以形成一織構化陶瓷。 A method for growing crystals of textured ceramics, comprising: a raw material mixing step of mixing an active material, an adhesive, a solvent and a reaction template to form a mixed slurry; a coating step of mixing the mixed slurry The material is coated on a plane to form a plane structure; a stacking and pressing step is to stack a plurality of the plane structures to a stack thickness to form a three-dimensional structure; a cutting step is to cut at one of different angles Cutting the three-dimensional structure in the direction to form a customized structure; an internal electrode coating step is to coat an internal electrode on at least one surface of the customized structure to form a customized internal electrode; a stacking step , is to stack a plurality of the customized internal electrodes on each other to form a multilayer structure; a pressing step is to apply pressure to the multilayer structure in all directions to form a compact multilayer structure; and a sintering step is to The compact multilayer structure is sintered at a sintering temperature to form a textured ceramic. 如請求項6所述之織構化陶瓷之長晶方法,其中該活性物質為一陶瓷粉末,該黏著劑為一高分子,該溶劑為一有機溶劑。 The crystal growth method of textured ceramics according to claim 6, wherein the active material is a ceramic powder, the binder is a polymer, and the solvent is an organic solvent. 如請求項6所述之織構化陶瓷之長晶方法,其中該反應模板為一鐵電材料。 The crystal growth method of textured ceramics as claimed in claim 6, wherein the reaction template is a ferroelectric material. 如請求項8所述之織構化陶瓷之長晶方法,其中該鐵電材料為一平板狀結構。 The crystal growth method of textured ceramics as claimed in claim 8, wherein the ferroelectric material is a flat plate structure. 如請求項6所述之織構化陶瓷之長晶方法,其中該燒結溫度為800℃至1700℃。 The crystal growth method of textured ceramics according to claim 6, wherein the sintering temperature is 800°C to 1700°C.
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CN105957710A (en) * 2016-05-12 2016-09-21 广东风华高新科技股份有限公司 Grinding method of ceramic green body and preparation method of multilayer ceramic capacitor
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