TWI798928B - Plating device and cleaning method for contact piece - Google Patents
Plating device and cleaning method for contact piece Download PDFInfo
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Abstract
鍍覆模組包含:鍍覆槽,其構成容納鍍覆液的態樣;基板固持器,其構成保持被鍍覆面朝下方之基板的態樣;旋轉機構,其構成使基板固持器旋轉的態樣;接觸構件494-4,其具有與保持於基板固持器之基板的被鍍覆面之外周部接觸的基板接點494-4a及比基板接點494-4a往更上方延伸的本體部494-4b,且該接觸構件安裝於基板固持器上;及接觸件清洗構件482,用以從基板固持器的下方朝向接觸構件494-4的本體部494-4b吐出清洗液。The plating module includes: a plating tank, which constitutes a state for containing the plating solution; a substrate holder, which constitutes a state for maintaining the substrate with the surface to be plated facing downward; a rotating mechanism, which constitutes a state for rotating the substrate holder. The contact member 494-4 has a substrate contact 494-4a that is in contact with the outer peripheral portion of the plated surface of the substrate held in the substrate holder and a body portion 494- that extends more upward than the substrate contact 494-4a 4b, and the contact member is installed on the substrate holder; and the contact cleaning member 482 is used to spit the cleaning solution from the bottom of the substrate holder toward the body portion 494-4b of the contact member 494-4.
Description
本案係關於一種鍍覆裝置及接觸件(contact)清洗方法。This case relates to a plating device and a contact cleaning method.
作為鍍覆裝置之一例,杯式電鍍裝置已為人所知。杯式電鍍裝置係使被鍍覆面朝下方而保持於基板固持器之基板(例如半導體晶圓)浸漬於鍍覆液中,並在基板與陽極之間施加電壓,藉此在基板表面析出導電膜。As an example of a plating apparatus, a cup type plating apparatus is known. The cup-type electroplating device immerses the substrate (such as a semiconductor wafer) held in the substrate holder with the surface to be plated facing downward in the plating solution, and applies a voltage between the substrate and the anode, thereby depositing a conductive film on the surface of the substrate .
以往技術的基板固持器上一般配置有用以對基板供電的接觸構件(contact member)。又,在基板固持器上配置有密封構件,用以防止在將基板浸漬於鍍覆液時鍍覆液侵入接觸構件的配置區域。然而,具有從密封構件與基板之間的間隙侵入的鍍覆液附著於接觸構件,或在鍍覆處理後從基板垂落的鍍覆液附著於接觸構件的情況。關於此點,如專利文獻1所記載,已有人揭示了一種技術,係關於可將接觸構件進行清洗的清洗裝置。
[先前技術文獻]
[專利文獻]
Conventional substrate holders are generally provided with contact members for supplying power to the substrate. In addition, a sealing member is arranged on the substrate holder to prevent the plating solution from intruding into the area where the contact member is arranged when the substrate is immersed in the plating solution. However, there are cases where the plating solution that invades from the gap between the sealing member and the substrate adheres to the contact member, or the plating solution that hangs down from the substrate after the plating process adheres to the contact member. In this regard, as described in
[專利文獻1]美國專利申請公開第2013/0061875號公報[Patent Document 1] US Patent Application Publication No. 2013/0061875
[發明所欲解決之問題][Problem to be solved by the invention]
然而,以往技術的鍍覆裝置中的清洗裝置係使用毛刷及清洗液將接觸構件進行清洗,其結構複雜。However, the cleaning device in the conventional coating device uses a brush and a cleaning solution to clean the contact member, and its structure is complicated.
於是,本案的目的之一係提供一種能夠以簡單的結構將接觸構件進行清洗的技術。 [解決問題之手段] Therefore, one of the objects of this application is to provide a technique capable of cleaning a contact member with a simple structure. [means to solve the problem]
根據一實施型態,揭示了一種鍍覆裝置,其包含:鍍覆槽,其構成容納鍍覆液的態樣;基板固持器,其構成保持被鍍覆面朝下方之基板的態樣;旋轉機構,其構成使前述基板固持器旋轉的態樣;接觸構件,其具有與前述基板固持器所保持之基板的被鍍覆面之外周部接觸的基板接點及比前述基板接點往更上方延伸的本體部,且該接觸構件安裝於前述基板固持器上;及接觸件清洗構件,用以從前述基板固持器的下方朝向前述接觸構件的前述本體部吐出清洗液。According to an implementation form, a plating device is disclosed, which includes: a plating tank, which constitutes a state for containing a plating solution; a substrate holder, which constitutes a state for holding a substrate with a plated surface facing downward; a rotating mechanism , which constitutes a state in which the aforementioned substrate holder is rotated; a contact member having a substrate contact point in contact with the outer peripheral portion of the plated surface of the substrate held by the aforementioned substrate holder and a contact point extending above the aforementioned substrate contact point a body portion, and the contact member is mounted on the substrate holder; and a contact cleaning member configured to spit out cleaning liquid toward the body portion of the contact member from below the substrate holder.
以下參照圖式對本發明之實施型態進行說明。在以下說明的圖式中,針對相同或相當的構成要件標註相同的符號而省略重複說明。 <鍍覆裝置的整體構成> Embodiments of the present invention will be described below with reference to the drawings. In the drawings described below, the same reference numerals are assigned to the same or corresponding constituent elements, and overlapping descriptions are omitted. <Overall configuration of the coating equipment>
圖1係顯示本實施型態的鍍覆裝置之整體構成的立體圖。圖2係顯示本實施型態的鍍覆裝置之整體構成的俯視圖。如圖1、2所示,鍍覆裝置1000具備:裝載埠100、搬運機器人110、對準器120、預浸模組300、鍍覆模組400、旋轉沖洗乾燥機(spin rinse dryer)600、搬運裝置700及控制模組800。FIG. 1 is a perspective view showing the overall configuration of a coating device of this embodiment. Fig. 2 is a plan view showing the overall configuration of the coating device of this embodiment. As shown in Figures 1 and 2, the
裝載埠100係用以將圖中未顯示的前開式晶圓傳送盒(FOUP,Front Opening Unified Pod)等匣盒中所收納之基板搬入鍍覆裝置1000,或是將基板從鍍覆裝置1000搬出匣盒的模組。本實施型態中,在水平方向上並排配置4台裝載埠100,但裝載埠100的數量及配置為任意。搬運機器人110係用以搬運基板的機器人,其構成在裝載埠100、對準器120及旋轉沖洗乾燥機600之間收送基板的態樣。搬運機器人110及搬運裝置700,在搬運機器人110與搬運裝置700之間收送基板時,可透過圖中未顯示的暫置台進行基板的收送。The
對準器120係用以將基板的定向平面或切口等的位置對準既定方向的模組。本實施型態中,在水平方向上並排配置2台對準器120,但對準器120的數量及配置為任意。The
預浸模組300例如構成實施預浸處理的態樣,該預浸處理係以硫酸或鹽酸等處理液將存在於鍍覆處理前之基板被鍍覆面上所形成之晶種層表面等的高電阻氧化膜蝕刻去除,以清洗鍍覆底層表面或使其活性化。本實施型態中,在上下方向上並排配置2台預浸模組300,但預浸模組300的數量及配置為任意。鍍覆模組400對於基板實施鍍覆處理。本實施型態中,設有兩組各12台、共24台的鍍覆模組400,各組之中在上下方向上並排配置3台且在水平方向上並排配置4台鍍覆模組400,但鍍覆模組400的數量及配置為任意。The
旋轉沖洗乾燥機600係用以使清洗處理後的基板高速旋轉以使其乾燥的模組。本實施型態中,在上下方向上並排配置2台旋轉沖洗乾燥機,但旋轉沖洗乾燥機的數量及配置為任意。搬運裝置700係用以在鍍覆裝置1000內的多個模組間搬運基板的裝置。控制模組800係以控制鍍覆裝置1000之多個模組的方式構成,其可由例如具備與操作者之間的輸入輸出介面的一般電腦或專用電腦所構成。The
說明以鍍覆裝置1000所進行的一連串鍍覆處理的一例。首先,將匣盒中所收納之基板搬入裝載埠100。然後,搬運機器人110從裝載埠100的匣盒取出基板,將基板搬運至對準器120。對準器120使基板的定向平面或切口等的位置對準既定方向。搬運機器人110對於搬運裝置700進行經過對準器120對準方向之基板的收送。An example of a series of plating processes performed by the plating
搬運裝置700將從搬運機器人110接收的基板搬運至鍍覆模組400。鍍覆模組400對於基板實施預濕處理。搬運裝置700將經實施預濕處理的基板搬運至預浸模組300。預浸模組300對於基板實施預浸處理。搬運裝置700將經實施預浸處理的基板搬運至鍍覆模組400。鍍覆模組400對於基板實施鍍覆處理。再者,鍍覆模組400對於經實施鍍覆處理的基板實施清洗處理。The
搬運裝置700將經實施清洗處理的基板搬運至旋轉沖洗乾燥機600。旋轉沖洗乾燥機600對於基板實施乾燥處理。搬運機器人110從旋轉沖洗乾燥機600接收基板,並將經實施乾燥處理的基板搬運至裝載埠100的匣盒。最後從裝載埠100搬出收納有基板的匣盒。
<鍍覆模組的構成>
The
接著說明鍍覆模組400的構成。本實施型態中的24台鍍覆模組400為相同的構成,因此僅說明1台鍍覆模組400。圖3係概略顯示本實施型態的鍍覆模組400之構成的縱剖面圖。如圖3所示,鍍覆模組400具備用以收納鍍覆液的鍍覆槽410。鍍覆槽410係具有圓筒狀側壁與圓形底壁的容器,其上部形成有圓形開口。又,鍍覆模組400具備配置於鍍覆槽410之上部開口外側的溢流槽405。溢流槽405係用以承接從鍍覆槽410上部開口溢出之鍍覆液的容器。Next, the configuration of the
鍍覆模組400具備將鍍覆槽410的內部在上下方向上隔開的隔膜420。鍍覆槽410的內部由隔膜420區分成陰極區域422與陽極區域424。陰極區域422與陽極區域424分別填充有鍍覆液。陽極區域424的鍍覆槽410的底面設有陽極430。陰極區域422中配置有與隔膜420相對向的阻力體450。阻力體450係用以達成在基板Wf的被鍍覆面Wf-a上均勻地進行鍍覆處理的構件,其係由形成有大量孔的板狀構件所構成。The
又,鍍覆模組400具備用以在被鍍覆面Wf-a朝下方的狀態下保持基板Wf的基板固持器440。鍍覆模組400具備用以使基板固持器440升降的升降機構442。升降機構442例如可由馬達等習知機構實現。又,鍍覆模組400具備以使基板Wf繞著相對於被鍍覆面Wf-a的中央而垂直地延伸的虛擬旋轉軸進行旋轉的方式使基板固持器440旋轉的旋轉機構446。旋轉機構446例如可由馬達等習知機構實現。Furthermore, the
鍍覆模組400構成下述態樣:使用升降機構442將基板Wf浸漬於陰極區域422的鍍覆液,一邊使用旋轉機構446使基板Wf旋轉,一邊在陽極430與基板Wf之間施加電壓,藉此對於基板Wf的被鍍覆面Wf-a實施鍍覆處理。The
又,鍍覆模組400具備傾斜機構447,其構成使基板固持器440傾斜的態樣。傾斜機構447例如可由斜置(tilt)機構等習知機構實現。Furthermore, the
鍍覆模組400具備:蓋體構件460,配置於鍍覆槽410的上方;及清洗裝置470,用以進行基板固持器440所保持之基板Wf的清洗處理。以下說明蓋體構件460及清洗裝置470。
<蓋體構件>
The
圖4係概略顯示本實施型態的鍍覆模組之構成的立體圖。圖5A係示意顯示本實施型態的鍍覆模組之蓋體構件的立體圖。圖5B係示意顯示本實施型態的鍍覆模組之蓋體構件的俯視圖。圖6係示意顯示本實施型態的鍍覆模組之蓋體構件的縱剖面圖。FIG. 4 is a perspective view schematically showing the composition of the coating module of this embodiment. FIG. 5A is a perspective view schematically showing the cover member of the coating module of this embodiment. FIG. 5B is a top view schematically showing the cover member of the coating module of this embodiment. Fig. 6 is a longitudinal sectional view schematically showing the cover member of the coating module of the present embodiment.
如圖4至圖6所示,蓋體構件460具有配置於鍍覆槽410上方的圓筒狀側壁461。側壁461係以圍住基板固持器440之升降路徑的方式配置。又,蓋體構件460具有與側壁461之下端連接的底壁462。底壁462係覆蓋鍍覆槽410之上部開口中比側壁461更外側部分的板狀構件。As shown in FIGS. 4 to 6 , the
如圖4至圖6所示,在底壁462上形成有排氣口464。如圖6所示,排氣口464與設置有鍍覆槽410、基板固持器440及蓋體構件460等構件之鍍覆模組400內的空間外部連通。因此,鍍覆槽410內的鍍覆液霧化所生成之環境氣體(鍍覆液環境氣體)透過排氣口464而排出至鍍覆模組400的外部。此外,本實施型態中顯示了將排氣口464形成於底壁462的例子,但並不僅限於此,排氣口464亦可形成於側壁461及底壁462之至少一者。As shown in FIGS. 4 to 6 , an
如圖5A及圖5B所示,在蓋體構件460的側壁461形成有開口461a。此開口461a成為用以使清洗裝置470在側壁461的外部與內部之間移動的通路。鍍覆模組400具備以使開口461a開閉的方式所構成的開閉機構467。As shown in FIGS. 5A and 5B , an opening 461 a is formed in the
開閉機構467具備第1門板468-1與第2門板468-2,用以將開口461a進行開閉。第1門板468-1與第2門板468-2沿著側壁461的圓周方向並排配置。第1門板468-1可旋轉地支撐於旋轉軸468-1a,該旋轉軸468-1a設於開口461a之一側端部。第2門板468-2可旋轉地支撐於旋轉軸468-2a,該旋轉軸468-2a設於開口461a之另一側端部。The opening and
開閉機構467包含:第1門板驅動構件469-1,用以使第1門板468-1朝向蓋體構件460的內部旋轉移動;及第2門板驅動構件469-2,用以使第2門板468-2朝向蓋體構件460的內部旋轉移動。第1門板驅動構件469-1及第2門板驅動構件469-2例如可由馬達等習知機構實現。The opening and
根據本實施型態,可兼具執行基板Wf的清洗以及抑制鍍覆槽410內的鍍覆液環境氣體排放至鍍覆模組400內。亦即,藉由設置蓋體構件460,鍍覆槽410的上部開口由底壁462、側壁461及基板固持器440所被覆,故可抑制鍍覆410槽內的鍍覆液環境氣體從鍍覆槽410的上部開口排放。又,在底壁462上形成有排氣口464,故鍍覆槽410內的鍍覆液環境氣體透過排氣口464排出至鍍覆模組400外部。藉此,可抑制配置於鍍覆模組400內的各種零件及配線等生鏽或腐蝕。According to this embodiment, cleaning of the substrate Wf and suppression of the ambient gas of the plating solution in the
除此之外,在側壁461上形成有開口461a,開口461a可藉由第1門板468-1與第2門板468-2進行開閉。因此,在不進行基板Wf的清洗處理時,第1門板驅動構件469-1及第2門板驅動構件469-2可將開口461a關閉以抑制鍍覆液環境氣體的排放。另一方面,在進行基板Wf的清洗處理時,第1門板驅動構件469-1及第2門板驅動構件469-2可將開口461a打開,藉此使清洗裝置470移動至蓋體構件460的內部,故可執行清洗處理。使用清洗裝置470之清洗處理的詳細內容於以下敘述。In addition, an
此外,上述實施型態中顯示了使第1門板468-1及第2門板468-2朝向蓋體構件460內部旋轉移動的例子,但並不限定於此。圖7A及圖7B係示意顯示變化例之蓋體構件的立體圖。圖7A及圖7B顯示了第1門板468-1及第2門板468-2將開口461a打開的狀態。In addition, although the example which rotated and moved the 1st door panel 468-1 and the 2nd door panel 468-2 toward the inside of the
如圖7A所示,第1門板468-1及第2門板468-2亦可以沿著側壁461的圓周方向移動的方式安裝於側壁461。第1門板驅動構件469-1亦可構成使第1門板468-1沿著蓋體構件460之側壁461的圓周方向滑動的態樣。第2門板驅動構件469-2亦可構成使第2門板468-2沿著蓋體構件460之側壁461的圓周方向滑動的態樣。As shown in FIG. 7A , the first door panel 468 - 1 and the second door panel 468 - 2 may be attached to the
如圖7B所示,第1門板468-1及第2門板468-2亦可以沿著側壁461在上下方向上移動的方式安裝於側壁461。第1門板驅動構件469-1亦可構成使第1門板468-1沿著蓋體構件460的側壁461在上下方向上滑動的態樣。第2門板驅動構件469-2亦可構成使第2門板468-2沿著蓋體構件460的側壁461在上下方向上滑動的態樣。
<清洗裝置>
As shown in FIG. 7B , the first door panel 468 - 1 and the second door panel 468 - 2 may be attached to the
接著說明清洗裝置470。圖8係概略顯示本實施型態的鍍覆模組之構成的俯視圖。如圖3、圖4及如圖8所示,清洗裝置470具備基板清洗構件472,用以將基板固持器440所保持之基板Wf的被鍍覆面Wf-a進行清洗。基板清洗構件472具備多個(本實施型態中為4個)基板清洗噴嘴472a。在基板清洗構件472配置於清洗位置時,多個基板清洗噴嘴472a係沿著基板Wf的半徑方向、或與基板Wf之旋轉方向交叉的方向而配置。在基板清洗構件472上連接有管路471。從圖中未顯示的液源所供給之清洗液(例如純水)透過管路471被送至基板清洗構件472,並分別從多個基板清洗噴嘴472a吐出。Next, the
又,清洗裝置470具備用以將接觸構件進行清洗的接觸件清洗構件482,該接觸構件用以對於基板固持器440所保持之基板Wf供電。接觸件清洗構件482具備用以吐出清洗液的接觸件清洗噴嘴482a。在接觸件清洗構件482上連接有管路481。從圖中未顯示的液源所供給之清洗液(例如純水)透過管路481被送至接觸件清洗構件482,並從接觸件清洗噴嘴482a吐出。使用接觸件清洗構件482的接觸構件之清洗的詳細內容於以下敘述。Furthermore, the
清洗裝置470具備以使臂部474旋繞的方式所構成的驅動機構476。驅動機構476例如可由馬達等習知機構實現。臂部474係從驅動機構476在水平方向上延伸的板狀構件。基板清洗構件472及接觸件清洗構件482保持於臂部474上。驅動機構476構成藉由使臂部474旋繞而使基板清洗構件472及接觸件清洗構件482在清洗位置與退避位置之間移動的態樣,該清洗位置係在鍍覆槽410與基板固持器440之間的位置,該退避位置係從鍍覆槽410與基板固持器440之間退避的位置。圖8中以實線顯示基板清洗構件472及接觸件清洗構件482配置於退避位置的狀態,並以虛線顯示基板清洗構件472及接觸件清洗構件482配置於清洗位置的狀態。The
如圖4及如圖8所示,清洗裝置470具備配置於基板清洗構件472下方的托盤構件478。托盤構件478係以承接從基板清洗構件472吐出並衝擊基板Wf之被鍍覆面Wf-a後落下之清洗液的方式所構成的容器。又,托盤構件478構成承接從接觸件清洗構件482吐出並衝擊接觸構件後落下之清洗液的態樣。本實施型態中,基板清洗構件472、接觸件清洗構件482及臂部474整體容納於托盤構件478。驅動機構476構成與基板清洗構件472、接觸件清洗構件482、臂部474及托盤構件478一起在清洗位置與退避位置之間旋繞的態樣。但是,驅動機構476亦可構成分別驅動基板清洗構件472、接觸件清洗構件482及臂部474、與托盤構件478的態樣。As shown in FIGS. 4 and 8 , the
如圖4所示,在托盤構件478的下方配置有固定托盤構件484。落入托盤構件478的清洗液,會落入固定托盤構件484。在固定托盤構件484上安裝有排液管488。落入固定托盤構件484的清洗液透過排液管488被排出。As shown in FIG. 4 , a fixed
清洗裝置470具備導電度計486,用以測量落入托盤構件478之清洗液的導電度。具體而言,導電度計486設於固定托盤構件484的清洗液流動處。鍍覆模組400可藉由測量固定托盤構件484中清洗液的導電度,來掌握清洗液中含有鍍覆液的程度,亦即清洗處理的進度。鍍覆模組400例如可根據藉由導電度計486所測量之清洗液的導電度,來進行結束清洗處理的判斷。
<基板的清洗>
The
鍍覆模組400在結束鍍覆處理後,藉由升降機構442使基板固持器440從鍍覆槽410上升,將基板固持器440配置於由蓋體構件460(側壁461)所包圍的位置。如圖8中虛線所示,鍍覆模組400將基板清洗構件472配置於清洗位置。藉此,使基板清洗噴嘴472a朝向基板Wf的被鍍覆面Wf-a。又,鍍覆模組400藉由旋轉機構446使基板固持器440旋轉。旋轉機構446例如構成以1rpm~20rpm的旋轉速度使基板固持器440旋轉的態樣。又,鍍覆模組400係在藉由傾斜機構447使基板固持器440傾斜的狀態下將基板Wf的被鍍覆面Wf-a進行清洗。以下說明此點。After finishing the plating process, the
圖9係概略顯示本實施型態的鍍覆模組之構成的俯視圖。圖10係概略顯示本實施型態的鍍覆模組之構成的縱剖面圖。圖11係概略顯示將本實施型態的鍍覆模組之構成之一部分放大的縱剖面圖。FIG. 9 is a top view schematically showing the composition of the coating module of this embodiment. Fig. 10 is a longitudinal sectional view schematically showing the constitution of the coating module of this embodiment. Fig. 11 is an enlarged longitudinal sectional view schematically showing a part of the configuration of the coating module of the present embodiment.
如圖10所示,基板固持器440具備:支撐機構494,用以支撐基板Wf之被鍍覆面Wf-a的外周部;背板組合件492,與支撐機構494一起夾持基板Wf;及旋轉軸491,從背板組合件492鉛直地往上延伸。支撐機構494係中央具有用以使基板Wf的被鍍覆面Wf-a露出之開口的環狀構件,藉由柱構件496將其吊起並保持。As shown in FIG. 10, the
背板組合件492具備圓板狀的浮動板492-2,用以與支撐機構494一起夾持基板Wf。浮動板492-2配置於基板Wf之被鍍覆面Wf-a的背面側。又,背板組合件492具備配置於浮動板492-2上方的圓板狀背板492-1。又,背板組合件492具備:浮動機構492-4,用以將浮動板492-2推往遠離基板Wf背面的方向;及壓附機構492-3,用以對抗浮動機構492-4所產生之推壓力而將浮動板492-2壓附於基板Wf的背面。The
浮動機構492-4包含壓縮彈簧,該壓縮彈簧安裝於從浮動板492-2貫通背板492-1並往上方延伸之軸的上端與背板492-1之間。浮動機構492-4構成下述態樣:藉由壓縮彈簧的壓縮反作用力,透過軸將浮動板492-2往上提起,並推往遠離基板Wf背面的方向。The floating mechanism 492-4 includes a compression spring installed between the upper end of the shaft extending upward from the floating plate 492-2 through the back plate 492-1 and the back plate 492-1. The floating mechanism 492-4 is configured as follows: by the compression reaction force of the compression spring, the floating plate 492-2 is lifted up through the shaft and pushed away from the back surface of the substrate Wf.
壓附機構492-3構成下述態樣:透過形成於背板492-1內部之流路將流體供給至浮動板492-2,藉此將浮動板492-2壓附於下方。在供給流體時,壓附機構492-3以比浮動機構492-4所形成之推壓力更強的力將基板Wf壓附至支撐機構494。The pressing mechanism 492-3 is configured in such a way that the fluid is supplied to the floating plate 492-2 through the flow path formed inside the back plate 492-1, thereby pressing the floating plate 492-2 below. When the fluid is supplied, the pressing mechanism 492-3 presses the substrate Wf to the supporting
如圖11所示,支撐機構494包含環狀的支撐構件494-1,用以支撐基板Wf之被鍍覆面Wf-a的外周部。支撐構件494-1具有從背板組合件492(浮動板492-2)之下表面的外周部伸出的凸緣494-1a。在凸緣494-1a上配置有環狀的密封構件494-2。密封構件494-2係具有彈性的構件。支撐構件494-1隔著密封構件494-2支撐基板Wf之被鍍覆面Wf-a的外周部。以密封構件494-2與浮動板492-2夾持基板Wf,藉此將支撐構件494-1(基板固持器440)與基板Wf之間進行密封。As shown in FIG. 11 , the
支撐機構494具備:環狀的台座494-3,安裝於支撐構件494-1的內周面;及環狀的導電構件494-5,安裝於台座494-3的上表面。台座494-3例如為不鏽鋼等具有導電性的構件。導電構件494-5例如為銅等具有導電性的環狀構件。The
支撐機構494具備用以對於基板Wf供電的接觸構件494-4。接觸構件494-4係藉由螺絲等環狀地安裝於台座494-3的內周面。支撐構件494-1透過台座494-3保持接觸構件494-4。接觸構件494-4係具有導電性構件,用以從圖中未顯示的電源對於基板固持器440所保持之基板Wf供電。接觸構件494-4具有:多個基板接點494-4a,與基板Wf之被鍍覆面Wf-a的外周部接觸;及本體部494-4b,比基板接點494-4a往更上方延伸。The
在將基板Wf進行鍍覆處理時,以密封構件494-2與背板組合件492將基板Wf夾持,藉此將支撐構件494-1與基板Wf之間密封。When the substrate Wf is subjected to the plating process, the substrate Wf is sandwiched between the sealing member 494-2 and the
如圖9及如圖10所示,傾斜機構447使基板固持器440傾斜。藉此,基板固持器440所保持之基板Wf亦會傾斜。此外,為了方面說明,圖9中省略托盤構件478等構件的圖示。As shown in FIGS. 9 and 10 , the tilt mechanism 447 tilts the
基板清洗構件472係與藉由傾斜機構447而傾斜且藉由旋轉機構446進行旋轉之基板Wf其具有向上旋轉分量的區域對向而配置。換言之,基板清洗構件472構成下述態樣:從與藉由傾斜機構447而傾斜之基板Wf的下端對應的位置Lo朝向與上端對應的位置Hi對於藉由旋轉機構446進行旋轉之基板Wf的被鍍覆面Wf-a吐出清洗液。The
多個基板清洗噴嘴472a分別為扇形噴嘴,其構成將清洗液以扇狀吐出,該扇狀是距離基板清洗噴嘴472a的前端越遠越擴展的扇狀。又,如圖9所示,多個基板清洗噴嘴472a分別構成下述態樣:從鄰接之基板清洗噴嘴472a所吐出的清洗液不會互相衝擊,且在圖中以箭頭A所示之基板Wf的旋轉方向上部分重疊。藉此,可將基板Wf的整個被鍍覆面Wf-a進行清洗。Each of the plurality of
圖12A係示意顯示基板的旋轉方向與基板清洗噴嘴之配置關係的圖。如圖12A所示,基板清洗構件472及基板清洗噴嘴472a可在與基板Wf的傾斜同樣傾斜的狀態下,朝向基板Wf的被鍍覆面Wf-a吐出清洗液。圖12B係顯示基板清洗噴嘴之清洗液吐出方向的變化例的圖。如圖12B所示,不管基板Wf是否傾斜,基板清洗噴嘴472a皆可鉛直地向上吐出清洗液。FIG. 12A is a diagram schematically showing the relationship between the rotation direction of the substrate and the arrangement of substrate cleaning nozzles. As shown in FIG. 12A , the
根據本實施型態,可高效率地清洗基板Wf。亦即,若在使基板Wf呈水平的狀態下,清洗液衝擊被鍍覆面,則附著於被鍍覆面之鍍覆液被清洗液沖掉,其一部分落下而被回收,但剩餘的一部分在附著於基板之被鍍覆面的狀態下直接伴隨著基板的旋轉而移動至清洗區域的下游側。移動至清洗區域之下游側的鍍覆液,在基板旋轉360°而再次移動至清洗區域之前不會被清洗,因此為了充分清洗整個被鍍覆面,清洗處理的時間會變長。According to this embodiment, the substrate Wf can be cleaned efficiently. That is, if the cleaning solution hits the surface to be plated with the substrate Wf in a horizontal state, the plating solution adhering to the surface to be plated is washed away by the cleaning solution, and a part of it falls and is recovered, while the remaining part is deposited on the surface to be plated. In the state of the plated surface of the substrate, it moves to the downstream side of the cleaning area directly following the rotation of the substrate. The plating solution moved to the downstream side of the cleaning area is not cleaned until the substrate rotates 360° and moves to the cleaning area again, so the cleaning process takes longer to fully clean the entire surface to be plated.
相對於此,根據本實施型態,基板Wf呈傾斜,因此被清洗液沖掉之鍍覆液因重力而沿著傾斜的方向(在圖9中為下方)流動。又,根據本實施型態,對於基板上具有向上分量而旋轉的區域吐出清洗液,故基板Wf上經過清洗之區域具有向上分量而旋轉(在圖9中為箭頭A方向)。因此,如圖9所示,在俯視下,被清洗液沖掉之鍍覆液的流動方向與基板Wf上經過清洗之區域的旋轉方向所形成的角度約為180°。亦即,基板Wf上經過清洗之區域進行旋轉的方向與鍍覆液流動的方向相反,故基板Wf上經過清洗之區域中不易混入鍍覆液,結果,可在短時間內充分清洗整個被鍍覆面。On the other hand, according to the present embodiment, since the substrate Wf is inclined, the plating solution washed away by the cleaning solution flows in an inclined direction (downward in FIG. 9 ) due to gravity. Also, according to the present embodiment, the cleaning solution is discharged to the region of the substrate Wf that rotates with an upward component, so the cleaned region of the substrate Wf rotates with an upward component (in the direction of arrow A in FIG. 9 ). Therefore, as shown in FIG. 9 , in a plan view, the angle formed by the flow direction of the plating solution washed away by the cleaning solution and the rotation direction of the cleaned area on the substrate Wf is about 180°. That is, the direction in which the cleaned area on the substrate Wf rotates is opposite to the direction in which the plating solution flows, so the cleaned area on the substrate Wf is less likely to be mixed with the plating solution. As a result, the entire plated area can be fully cleaned in a short time. cover.
圖13係顯示本實施型態所進行之清洗與比較例所進行之清洗的結果的圖。圖13中,縱軸表示基板Wf之被鍍覆面Wf-a上殘留的污染量(鍍覆液量),橫軸表示清洗時間(基板固持器已旋轉幾圈)。在圖13中,圖表α表示本實施型態所造成之污染量,圖表β表示比較例所造成之污染量。比較例表示在基板固持器440的旋轉速度不變(10rpm)而使旋轉方向逆轉的狀態下進行清洗處理時的污染量。Fig. 13 is a graph showing the results of cleaning performed in the present embodiment and cleaning performed in the comparative example. In FIG. 13 , the vertical axis represents the amount of contamination remaining on the plated surface Wf-a of the substrate Wf (the amount of plating solution), and the horizontal axis represents the cleaning time (how many times the substrate holder has been rotated). In FIG. 13, graph α represents the amount of pollution caused by this embodiment, and graph β represents the amount of pollution caused by the comparative example. The comparative example shows the amount of contamination when the cleaning process is performed with the rotation speed of the
如圖13所示,比較例中,在使基板固持器440旋轉2圈的狀態下仍殘留污染。另一方面,相較於比較例,本實施型態在更短的時間內污染量減少,在使基板固持器440旋轉2圈的狀態下污染量幾乎為0。如此,根據本實施型態,可高效率地清洗基板Wf。As shown in FIG. 13 , in the comparative example, contamination remained even after the
此外,本實施型態中顯示了圖9所示,在俯視下,被清洗液沖掉之鍍覆液的流動方向與基板Wf上經過清洗之區域的旋轉方向所形成之角度約為180°的例子,但並不限定於此。例如,若將基板清洗構件472配置於圖9中以虛線顯示之A區域,則鍍覆液的流動方向與基板Wf上經過清洗之區域的旋轉方向所形成的角度為0°。此情況下,基板Wf上經過清洗之區域進行旋轉的方向與鍍覆液流動的方向相同,故無法得到本實施型態的效果(上述比較例)。若將基板清洗構件472配置於B區域,則該角度為90°,若將基板清洗構件472配置於C區域,則該角度為270°。此情況下,本實施型態的效果有所限定。In addition, in this embodiment, as shown in FIG. 9, in a plan view, the angle formed by the flow direction of the plating solution washed away by the cleaning solution and the rotation direction of the cleaned area on the substrate Wf is about 180°. example, but not limited to. For example, if the
另一方面,若該角度大於90°且小於270°,則基板Wf上經過清洗之區域不易混入鍍覆液。因此,基板清洗構件472可使該角度大於90°且小於270°,換言之,可對於從與傾斜之基板Wf的下端對應的位置Lo朝向與上端對應之位置Hi旋轉的基板之被鍍覆面(圖9的一點鏈線AA-AA所夾住的區域)吐出清洗液。又,基板清洗構件472若使該角度大於135°且小於225°,換言之,若對於圖9的二點鏈線BB-BB所夾住的區域吐出清洗液,則清洗的效率更高,因而更佳。On the other hand, if the angle is greater than 90° and less than 270°, the cleaned area on the substrate Wf is less likely to be mixed with the plating solution. Therefore, the
此外,上述實施型態中顯示了在使基板Wf傾斜的狀態下進行清洗處理的例子,但並不限定於此。圖14係概略顯示變化例的鍍覆模組之構成的側視圖。本變化例的鍍覆模組與上述實施型態的鍍覆模組的基本構成相同,故省略說明相同的構成,而僅說明不同的構成。In addition, in the above-mentioned embodiment, the example in which the cleaning process was performed with the substrate Wf tilted was shown, but it is not limited thereto. Fig. 14 is a side view schematically showing the configuration of a plating module according to a modification. The basic configuration of the coating module of this modification is the same as that of the above-mentioned embodiment, so the description of the same configuration will be omitted, and only the different configuration will be described.
如圖14所示,本變化例的鍍覆模組400構成不使基板固持器440傾斜而在使基板Wf的被鍍覆面Wf-a保持大致水平的狀態下進行清洗處理的態樣。又,基板清洗構件472構成吐出具有與藉由旋轉機構446進行旋轉之基板Wf的旋轉方向為相反方向之速度分量的清洗液的態樣。As shown in FIG. 14 , the
具體而言,基板清洗構件472及基板清洗噴嘴472a係以使清洗液的吐出方向與基板Wf之旋轉方向呈相反方向的方式傾斜而配置。基板清洗構件472在此狀態下朝向基板Wf的被鍍覆面Wf-a吐出清洗液,藉此可高效率地清洗基板Wf。Specifically, the
亦即,藉由如本變化例般吐出清洗液,衝擊基板Wf之被鍍覆面Wf-a的清洗液,一邊將附著於被鍍覆面Wf-a之鍍覆液往基板旋轉方向之上游側沖掉一邊落下而被回收。另一方面,基板Wf上經過清洗之區域旋轉至基板旋轉方向的下游側。因此,基板Wf上經過清洗之區域進行旋轉的方向與鍍覆液流動的方向呈相反,故在基板Wf上經過清洗之區域中不易混入鍍覆液,結果,可在短時間內充分清洗整個被鍍覆面。That is, by discharging the cleaning solution as in this modification, the cleaning solution collides with the surface to be plated Wf-a of the substrate Wf, and the plating solution adhering to the surface to be plated Wf-a is rushed toward the upstream side in the rotation direction of the substrate. Falls to one side and is recovered. On the other hand, the cleaned area on the substrate Wf is rotated to the downstream side in the substrate rotation direction. Therefore, the direction in which the cleaned region on the substrate Wf rotates is opposite to the direction in which the plating solution flows, so that the cleaned region on the substrate Wf is less likely to be mixed with the plating solution. As a result, the entire substrate Wf can be sufficiently cleaned in a short time. plated surface.
在本變化例中,配置於基板清洗構件472的全部(4個)基板清洗噴嘴472a會吐出具有與基板Wf的旋轉方向為相反方向之速度分量的清洗液,故可得到上述效果。假設配置於基板清洗構件472之基板清洗噴嘴472a中的一部分吐出具有沿著基板Wf之旋轉方向的方向之速度分量的清洗液,則被該清洗液沖掉之鍍覆液流向基板之旋轉方向的下游,故基板Wf上經過清洗之區域中容易混入鍍覆液,而不易得到上述效果或效果降低。In this modification, all (four)
又,上述實施型態中顯示了基板清洗構件472上排列有4個基板清洗噴嘴472a的例子,但並不限定於此。圖15A係概略顯示變化例的鍍覆模組之構成的俯視圖。圖15B係從圖15A所示之鍍覆模組的箭頭B方向觀看的側視示意圖。在圖15中,省略說明與圖9之實施型態重複的構成。In addition, in the above-mentioned embodiment, an example in which four
如圖15A所示,基板清洗構件472具備:多個(4個)基板清洗噴嘴472a;及密封清洗噴嘴472b,相較於該等多個基板清洗噴嘴472a配置於基板的外周側。密封清洗噴嘴472b係用以清洗密封構件494-2的構件,該密封構件494-2係用以將基板固持器440與基板Wf之間密封。As shown in FIG. 15A , the
密封清洗噴嘴472b為扇形噴嘴,其構成鉛直向上及傾斜而將清洗液朝向位於相對較高位置之基板固持器440的方向吐出成扇狀的態樣。密封清洗噴嘴472b構成朝向密封構件494-2的內周面吐出具有沿著在圖15A中箭頭A所示之方向上旋轉之密封構件494-2其旋轉方向的方向之速度分量的清洗液的態樣。The
根據本變化例,可高效率地清洗密封構件494-2。亦即,在圖15A中虛線473所示之區域中,從基板清洗噴嘴472a所吐出之清洗液在衝擊基板後,沿著基板的傾斜而流下。藉此,虛線473所示之區域中,在密封構件494-2的內周面形成清洗液的厚液膜。因此,假設從密封清洗噴嘴472b朝向圖15A中向下的密封構件494-2吐出清洗液的情況下,受到厚液膜所阻礙,而難以用充分的撞擊力使清洗液撞到密封構件494-2,結果密封構件494-2的清洗效率變差。According to this modification, the sealing member 494-2 can be cleaned efficiently. That is, in the region indicated by the dotted
相對於此,本變化例中,密封清洗噴嘴472b構成朝向密封構件494-2吐出清洗液的態樣,該密封構件494-2係安裝在傾斜之基板固持器440的相對較高位置。因此,在清洗液所衝擊的密封構件494-2之內周面並未形成液膜或液膜較薄,故可用充分的撞擊力來清洗密封構件494-2,結果可高效率地清洗密封構件494-2。In contrast, in this modification, the
除此之外,根據本變化例,可抑制托盤構件478的尺寸大型化。亦即,假設從密封清洗噴嘴472b朝向圖15A中向下的密封構件494-2吐出清洗液的情況下,所吐出之清洗液衝擊液膜,藉此沿著密封構件494-2的內周面將液膜往虛線箭頭475所示方向沖掉。如此,具有所沖掉之液膜灑落至托盤構件478之前端部478a外側的疑慮。為了防止清洗液從托盤構件478灑落,也有想到擴大前端部478a等而使托盤構件478的尺寸變大,但此情況從裝置整體大型化或干擾其他零件等觀點來看較為不佳。In addition, according to this modification, it is possible to suppress an increase in size of the
相對於此,根據本變化例,密封清洗噴嘴472b構成朝向不易積存液膜之區域的密封構件494-2之內周面吐出清洗液的態樣。因此不會輕易將積存於虛線473所示之區域中的液膜沖掉,故清洗液不易從托盤構件478灑落,結果可抑制托盤構件478的尺寸大型化。On the other hand, according to this modification, the
此外,圖15所示之變化例中顯示了密封清洗噴嘴472b為扇形噴嘴的例子,但並不限定於此。圖16A係概略顯示變化例的鍍覆模組之構成的俯視圖。圖16B係從圖16A所示之鍍覆模組的箭頭B方向觀看的側視示意圖。圖16中省略說明與圖15的變化例重複的構成。In addition, in the modification example shown in FIG. 15, the example in which the
如圖16A所示,密封清洗噴嘴472b亦可為直線狀地吐出清洗液的直進噴嘴。根據本變化例,與圖15的變化例相同,可高效率地清洗密封構件494-2,並且可抑制托盤構件478的尺寸大型化。As shown in FIG. 16A , the
此外,上述說明中顯示了在鍍覆處理後為了從基板Wf的被鍍覆面Wf-a洗掉鍍覆液而使用基板清洗構件472的例子,但並不限定於此。鍍覆模組400亦可使用基板清洗構件472來進行預濕處理。亦即,鍍覆模組400可使用基板清洗構件472,以純水或脫氣水等處理液使鍍覆處理前的基板Wf之被鍍覆面Wf-a濕潤,藉此將形成於基板表面之圖案內部的空氣置換成處理液。In addition, although the above description shows an example in which the
又,上述說明中顯示了托盤構件478構成容納基板清洗構件472、接觸件清洗構件482及臂部474整體的例子,但並不限定於此。圖17A至圖17C係示意顯示變化例之托盤構件的俯視圖。In addition, in the above description, the example in which the
如圖17A所示,變化例的托盤構件478A亦可具有下述構件而構成:大致圓形的第1托盤478A-1,配置於與傾斜之基板Wf的中央對應的位置;大致圓形的第2托盤478A-2,配置於與傾斜之基板Wf的下端對應的位置;及連結托盤478A-3,將第1托盤478A-1與第2托盤478A-2連結。在第1托盤478A-1的中央連接有排液管路478A-4,流入排液管路478A-4的清洗液及鍍覆液會落入固定托盤構件484。As shown in FIG. 17A , the
基板固持器440所保持之基板Wf撓曲而中央變得稍低,故吐出至基板Wf之被鍍覆面Wf-a的清洗液會流至基板Wf的中央,或流至傾斜之基板Wf的下端。關於此點,本變化例中,在與基板Wf之中央對應的位置配置有第1托盤478A-1,且在與傾斜之基板Wf的下端對應的位置配置有第2托盤478A-2,故可高效率地回收清洗液。The substrate Wf held by the
如圖17B所示,變化例的托盤構件478B具備L形的托盤478B-1,該托盤478B-1配置於與傾斜之基板Wf的中央及下端對應的位置。在L形的托盤478B-1上連接有排液管路478B-2,流入排液管路478B-2的清洗液及鍍覆液會落入固定托盤構件484。本變化例中,亦在與基板Wf的中央及下端對應的位置配置有L形的托盤478B-1,故可高效率地回收清洗液。As shown in FIG. 17B , a
如圖17C所示,變化例的托盤構件478C具備多個(本變化例中為5片)三角形托盤478C-1。多個三角形托盤478C-1分別在上下方向上重疊配置,且可繞著各托盤478C-1的頂部旋轉。在多個三角形托盤478C-1上連接有排液管路478C-2,流入排液管路478C-2的清洗液及鍍覆液會落入固定托盤構件484。多個三角形托盤478C-1在配置於圖17C所示清洗位置時,分別以不同的旋轉角度配置而整體形成扇狀。藉此,在與基板Wf的中央及下端對應的位置配置有多個三角形托盤478C-1,故可高效率地回收清洗液。另一方面,多個三角形托盤478C-1在配置於退避位置時,分別以相同的旋轉角度配置,藉此可減少托盤構件478C的設置空間。
<接觸構件的清洗>
As shown in FIG. 17C , a
接著說明安裝於基板固持器440之接觸構件的清洗。圖18係示意顯示以本實施型態之鍍覆模組清洗接觸構件的圖。省略說明與使用圖11所說明之構件相同的構成。Next, cleaning of the contact member mounted on the
如使用圖11所說明,在將基板Wf進行鍍覆處理時,藉由以密封構件494-2與背板組合件492夾持基板Wf,可將支撐構件494-1與基板Wf之間密封。然而,若密封構件494-2與基板Wf之間稍有間隙,則有鍍覆液侵入而附著於接觸構件494-4的情況。又,在鍍覆處理後使基板Wf上升時,亦有鍍覆液從基板Wf落下而附著於接觸構件494-4的情況。As described using FIG. 11 , when the substrate Wf is subjected to the plating process, the support member 494 - 1 and the substrate Wf can be sealed by sandwiching the substrate Wf between the sealing member 494 - 2 and the
於是,如圖18所示,接觸件清洗構件482(接觸件清洗噴嘴482a)構成從基板固持器440的下方朝向接觸構件的本體部494-4b吐出清洗液的態樣。具體而言,在將接觸構件494-4進行清洗時,背板組合件492配置於比接觸構件494-4所包圍之位置更高的位置,圖18中未顯示。接觸件清洗構件482構成透過支撐機構494(支撐構件494-1)的開口對於本體部494-4b吐出清洗液的態樣。接觸件清洗噴嘴482a為扇形噴嘴,其構成將清洗液吐出成扇狀的態樣。圖18中顯示了接觸件清洗噴嘴482a以相對於水平面約為45°的仰角吐出清洗液的例子,但並不僅限於此,清洗液的吐出角度為任意。衝擊本體部494-4b的清洗液會因重力而從本體部494-4b流向下方,故將附著於本體部494-4b及基板接點494-4a的鍍覆液洗掉並回收至托盤構件478。Then, as shown in FIG. 18 , the contact cleaning member 482 (
根據本實施型態,能夠以簡單的結構將接觸構件進行清洗。亦即,本實施型態中,藉由驅動機構476將接觸件清洗構件482配置於基板固持器440下方的清洗位置,透過支撐機構494(支撐構件494-1)的開口對於本體部494-4b吐出清洗液。因此,無需使用毛刷來清洗接觸構件或在接觸構件的側邊或上方配置噴嘴,故能以簡單的結構將接觸構件進行清洗。According to this embodiment, the contact member can be cleaned with a simple structure. That is, in this embodiment, the
上述實施型態中顯示了從接觸件清洗噴嘴482a所吐出之清洗液直接衝擊本體部494-4b的例子,但並不限定於此。圖19係示意顯示以本實施型態之鍍覆模組清洗接觸構件的圖。如圖19所示,本實施型態中,在將接觸構件494-4進行清洗時,背板組合件492(浮動板492-2)配置於由接觸構件494-4所包圍的位置。In the above-mentioned embodiment, the example in which the cleaning fluid discharged from the
接觸件清洗構件482構成朝向背板組合件492的下表面吐出清洗液,使撞到背板組合件492下表面而反彈回來的清洗液朝向本體部494-4b的態樣。撞到背板組合件492下表面而反彈回來的清洗液在衝擊本體部494-4b後,會因重力而從本體部494-4b流向下方。藉此,附著於本體部494-4b及基板接點494-4a的鍍覆液與清洗液一起落下而被回收至托盤構件478。The
根據本實施型態,與上述實施型態相同,能夠以簡單的結構將接觸構件進行清洗。除此之外,根據本實施型態,可抑制安裝於基板固持器440之金屬構件(例如導電構件494-5)生鏽。亦即,在將接觸構件494-4進行清洗時,將接觸件清洗構件482配置於接觸構件494-4的上方或側邊的技術中,具有接觸件清洗構件482與背板組合件492接觸的疑慮,故使背板組合件492退避至較高位置。如此,從接觸件清洗構件482吐出而衝擊接觸構件494-4的清洗液飛濺而附著於金屬構件(例如導電構件494-5),而有生鏽的疑慮。為了避免清洗液飛濺而附著於金屬構件,必須精密地控制接觸件清洗構件482的配置位置、清洗液的吐出角度、清洗液的吐出強度等,因而不佳。According to this embodiment, the contact member can be cleaned with a simple structure similarly to the above-mentioned embodiment. In addition, according to the present embodiment, rusting of metal members (such as the conductive member 494 - 5 ) mounted on the
相對於此,本實施型態中,將接觸件清洗構件482配置於基板固持器440的下方,從基板固持器440的下方吐出清洗液。因此,可在由接觸構件494-4所包圍的位置隔出空間,故可在此空間中配置背板組合件492。如圖19所示,背板組合件492成為與在接觸構件494-4更上方之金屬構件(例如導電構件494-5)相對的壁部,故可抑制從接觸件清洗構件482所吐出之清洗液飛濺至金屬構件。結果,根據本實施型態,無需精密地控制接觸件清洗構件482的配置位置、清洗液的吐出角度、清洗液的吐出強度等,而可簡單地清洗接觸構件494-4。On the other hand, in this embodiment, the
上述顯示了在基板固持器440呈水平的狀態下將接觸構件494-4進行清洗的例子,但並不限定於此。圖20係示意顯示以本實施型態之鍍覆模組清洗接觸構件的圖。Although the example in which the contact member 494-4 is cleaned while the
如圖20所示,接觸件清洗構件482亦可在藉由傾斜機構447使基板固持器440傾斜的狀態下將接觸構件494-4進行清洗。此情況下,如圖20所示,接觸件清洗構件482可朝向接觸構件494-4之本體部494-4b吐出清洗液,該接觸構件494-4係安裝在藉由傾斜機構447傾斜而位於相對較低位置之基板固持器440上。As shown in FIG. 20 , the
又,上述實施型態中顯示了從接觸件清洗噴嘴482a將清洗液吐出成扇狀的例子,但並不限定於此。圖21係示意顯示接觸件清洗噴嘴之變化例的圖。如圖21所示,變化例的接觸件清洗噴嘴482a’亦可為直線狀地吐出清洗液的直進噴嘴。藉由使用直進噴嘴,可對於瞄準接觸構件494-4之本體部494-4b的位置吐出清洗液。
<基板清洗方法及接觸件清洗方法>
In addition, in the above-mentioned embodiment, the example in which the cleaning liquid is discharged in a fan shape from the
接著說明本實施型態之基板清洗方法及接觸件清洗方法。圖22係顯示本實施型態之基板清洗方法及接觸件清洗方法的流程圖。圖22的流程圖顯示了將基板固持器440所保持之基板Wf浸漬於鍍覆槽410以進行鍍覆處理後的各處理。又,圖22的流程圖顯示了使用圖15或圖16所示之鍍覆模組的基板清洗方法及接觸件清洗方法。Next, the method of cleaning the substrate and the method of cleaning the contacts in this embodiment will be described. FIG. 22 is a flow chart showing the method for cleaning the substrate and the method for cleaning the contacts in this embodiment. The flowchart of FIG. 22 shows each process after the substrate Wf held by the
基板清洗方法中,鍍覆處理結束後,則使用升降機構442使基板固持器440從鍍覆槽410上升,將基板固持器440配置於由蓋體構件460(側壁461)所包圍的位置(上升步驟102)。In the substrate cleaning method, after the plating process is completed, the
接著,基板清洗方法中,使配置於蓋體構件460的側壁461之開口461a的第1門板468-1及第2門板468-2移動以將開口461a開啟(開啟步驟104)。如圖5B所示,開啟步驟104可使第1門板468-1及第2門板468-2朝向蓋體構件460的內部旋轉移動。但並不僅限於此,如圖7A所示,開啟步驟104亦可使第1門板468-1及第2門板468-2沿著蓋體構件460之側壁461的圓周方向滑動。又,如圖7B所示,開啟步驟104亦可使第1門板468-1及第2門板468-2沿著蓋體構件460的側壁461在上下方向上滑動。Next, in the substrate cleaning method, the first door panel 468 - 1 and the second door panel 468 - 2 arranged in the
接著,基板清洗方法中,使基板清洗噴嘴472a朝向基板Wf的被鍍覆面Wf-a(步驟106)。又,基板清洗方法中,使密封清洗噴嘴472b朝向密封構件494-2(步驟107)。此外,為了方便而將步驟106與步驟107作為分開的步驟進行說明,但步驟106及步驟107係藉由第1移動步驟來執行,該第1移動步驟係使用驅動機構476,透過藉由開啟步驟104而開啟的開口461a而使清洗裝置470(基板清洗構件472及接觸件清洗構件482)移動至清洗位置。Next, in the substrate cleaning method, the
接著,基板清洗方法中,使用傾斜機構447使基板固持器440(及基板Wf)傾斜(傾斜步驟108)。接著,基板清洗方法中,使用旋轉機構446使基板固持器440(及基板Wf)旋轉(旋轉步驟110)。此外,開啟步驟104、傾斜步驟108及旋轉步驟110可更換執行順序,亦可同時執行。Next, in the substrate cleaning method, the substrate holder 440 (and the substrate Wf) is tilted using the tilt mechanism 447 (tilting step 108 ). Next, in the substrate cleaning method, the substrate holder 440 (and the substrate Wf) is rotated using the rotation mechanism 446 (rotation step 110 ). In addition, the
接著,基板清洗方法中,對於基板Wf的被鍍覆面Wf-a吐出清洗液,其中該基板Wf係藉由旋轉步驟110從與藉由傾斜步驟108而傾斜之基板Wf的下端對應的位置Lo朝向與上端對應之位置Hi進行旋轉(基板清洗步驟112)。附著於被鍍覆面Wf-a之鍍覆液係藉由基板清洗步驟112進行清洗。此外,基板清洗步驟112亦可吐出具有與旋轉之基板的旋轉方向為相反方向之速度分量的清洗液。此情況下,基板Wf亦可保持水平,因此亦可不執行傾斜步驟108。Next, in the substrate cleaning method, the cleaning liquid is discharged to the plated surface Wf-a of the substrate Wf by the
又,基板清洗方法中,從密封清洗噴嘴472b朝向密封構件494-2的內周面吐出具有沿著藉由旋轉步驟110進行旋轉之密封構件494-2之旋轉方向的方向之速度分量的清洗液(密封清洗步驟113)。藉由密封清洗步驟113洗掉附著於密封構件494-2之內周面的鍍覆液。此外,為了方便而將基板清洗步驟112與密封清洗步驟113作為分開的步驟進行說明,但兩步驟亦可同時執行。Also, in the substrate cleaning method, the cleaning liquid having a velocity component in a direction along the rotation direction of the sealing member 494-2 rotated by the
接著,基板清洗方法中,根據藉由導電度計486所測量的清洗液之導電度,來停止對於基板Wf的被鍍覆面Wf-a吐出清洗液(停止步驟114)。亦即,附著於基板Wf之被鍍覆面Wf-a的鍍覆液被清洗液沖掉而落入托盤構件478,並通過固定托盤構件484而排出。此時,藉由導電度計486測量清洗液的導電度。若所測量之導電度足夠低,則可知清洗液所包含之鍍覆液的量充分減少,亦即可知清洗處理已完成,因此基板清洗方法中,可結束基板清洗。Next, in the substrate cleaning method, according to the conductivity of the cleaning solution measured by the
接著,接觸件清洗方法中,使藉由傾斜步驟108而傾斜之基板固持器440(及基板)回到傾斜前的狀態、亦即水平狀態(傾斜解除步驟116)。接著,接觸件清洗方法中,停止藉由旋轉步驟110進行旋轉之基板固持器440的旋轉(旋轉停止步驟118)。此外,傾斜解除步驟116及旋轉停止步驟118可更換執行順序,亦可同時執行。Next, in the contact cleaning method, the substrate holder 440 (and the substrate) tilted by the tilting
接著,接觸件清洗方法中,使背板組合件492上升而從基板固持器440取出基板Wf(基板取出步驟120)。接著,接觸件清洗方法中,使接觸件清洗噴嘴482a朝向安裝在基板固持器440之接觸構件494-4(步驟121)。此外,為了方便,在步驟121中說明了使接觸件清洗噴嘴482a朝向接觸構件494-4,但步驟121係藉由上述第1移動步驟來執行。Next, in the contact cleaning method, the
接著,接觸件清洗方法中,使背板組合件492下降而配置於由接觸構件494-4所包圍的位置(配置步驟122)。接著,接觸件清洗方法中,使用傾斜機構447使基板固持器440(及基板Wf)傾斜(傾斜步驟124)。接著,接觸件清洗方法中,使用旋轉機構446使基板固持器440(及基板Wf)旋轉(旋轉步驟126)。此外,配置步驟122、傾斜步驟124及旋轉步驟126,可更換執行順序,亦可同時執行。Next, in the contact cleaning method, the
接著,接觸件清洗方法中,從配置於基板固持器440下方的接觸件清洗構件482朝向接觸構件494-4的本體部494-4b吐出清洗液(接觸件清洗步驟128)。接觸件清洗步驟128係對於接觸構件494-4執行,該接觸構件494-4係安裝在藉由傾斜步驟124傾斜而位於相對較低位置的基板固持器440上。具體而言,如圖20所示,接觸件清洗步驟128可朝向背板組合件492的下表面吐出清洗液,並使撞到背板組合件492下表面而反彈回來之清洗液朝向本體部494-4b。但是,並不限定於此,接觸件清洗步驟128亦可從接觸件清洗噴嘴482a直接對於本體部494-4b吐出清洗液。附著於接觸構件494-4之鍍覆液係藉由接觸件清洗步驟128進行清洗。Next, in the contact cleaning method, cleaning liquid is discharged from the
接著,接觸件清洗方法中,若藉由導電度計486所測量的清洗液之導電度小於既定閾值,則使藉由傾斜步驟124傾斜之基板固持器440(及基板)回到傾斜前的狀態,亦即水平狀態(傾斜解除步驟130)。接著,接觸件清洗方法中,對於藉由傾斜解除步驟130而呈水平之基板固持器440的接觸構件494-4之本體部494-4b吐出清洗液(濕潤步驟132)。濕潤步驟132係以清洗液(純水)使接觸構件494-4整體均勻地濕潤而藉此避免後續鍍覆處理時發生供電不均的步驟。Next, in the contact cleaning method, if the conductivity of the cleaning solution measured by the
基板Wf的清洗及接觸構件494-4的清洗結束後,在基板清洗方法中,使清洗裝置470(基板清洗構件472及接觸件清洗構件482)移動至退避位置(第2移動步驟134)。接著,基板清洗方法中,使第1門板468-1及第2門板468-2移動至蓋體構件460之側壁461的開口461a而將開口461a關閉(關閉步驟136)。After cleaning of the substrate Wf and cleaning of the contact member 494 - 4 , in the substrate cleaning method, the cleaning device 470 (the
以上說明了本發明之幾個實施型態進行說明,但上述發明的實施型態係用以使本發明容易理解,並非限定本發明。本發明只要不脫離其主旨,則可進行變更、改良,並且本發明當然亦包含其均等物。又,在可解決上述問題之至少一部分的範圍或是可發揮至少部分效果的範圍內,可將申請專利範圍及說明書所記載之各構成要件任意組合,或是將其省略。Several embodiments of the present invention have been described above, but the embodiments of the invention described above are intended to facilitate the understanding of the present invention and are not intended to limit the present invention. This invention can be changed and improved unless it deviates from the summary, and it goes without saying that this invention also includes the equivalent. In addition, within the scope of solving at least part of the above-mentioned problems or exhibiting at least part of the effect, the respective constituent elements described in the claims and the specification can be combined arbitrarily or omitted.
本案揭示一種鍍覆裝置作為一實施型態,其包含:鍍覆槽,其構成容納鍍覆液的態樣;基板固持器,其構成保持鍍覆面朝下方之基板的態樣;旋轉機構,其構成使前述基板固持器旋轉的態樣;接觸構件,其具有與前述基板固持器所保持之基板的被鍍覆面之外周部接觸的基板接點及比前述基板接點往更上方延伸的本體部,且該接觸構件安裝於前述基板固持器上;及接觸件清洗構件,用以從前述基板固持器的下方朝向前述接觸構件的前述本體部吐出清洗液。This case discloses a plating device as an implementation form, which includes: a plating tank, which constitutes a state for containing a plating solution; a substrate holder, which constitutes a state for holding a substrate with a plated surface facing downward; a rotating mechanism, which A form for rotating the substrate holder; a contact member having a substrate contact point in contact with an outer peripheral portion of a plated surface of a substrate held by the substrate holder and a body portion extending above the substrate contact point , and the contact member is mounted on the aforementioned substrate holder; and a contact cleaning member configured to spit cleaning liquid toward the aforementioned body portion of the aforementioned contact member from below the aforementioned substrate holder.
再者,本案揭示了一種鍍覆裝置作為一實施型態,其中,前述基板固持器包含環狀的支撐構件,該環狀的支撐構件構成支撐前述基板的被鍍覆面之外周部的態樣,且中央具有開口,前述接觸構件環狀地安裝於前述支撐構件,前述接觸件清洗構件構成透過前述支撐構件的前述開口朝向前述接觸構件的前述本體部吐出清洗液的態樣。Furthermore, this case discloses a plating device as an implementation form, wherein the aforementioned substrate holder includes a ring-shaped support member, and the ring-shaped support member constitutes a state of supporting the outer periphery of the plated surface of the aforementioned substrate, There is an opening in the center, the contact member is annularly attached to the support member, and the contact cleaning member discharges cleaning liquid toward the main body of the contact member through the opening of the support member.
再者,本案揭示了一種鍍覆裝置作為一實施型態,其中,前述基板固持器包含背板組合件,該背板組合件配置於前述基板之被鍍覆面的背面側,且構成與前述支撐構件一起夾持前述基板的態樣,前述背板組合件,在將前述接觸構件進行清洗時,配置於由前述接觸構件所包圍的位置,前述接觸件清洗構件構成朝向前述背板組合件的下表面吐出清洗液並使撞到前述背板組合件的下表面而反彈回來的清洗液朝向前述本體部的態樣。Furthermore, this case discloses a plating device as an implementation form, wherein the aforementioned substrate holder includes a back plate assembly, which is arranged on the back side of the surface to be plated of the aforementioned substrate, and constitutes the same as the aforementioned support When the members hold the substrate together, the back plate assembly is arranged at a position surrounded by the contact member when cleaning the contact member, and the contact cleaning member constitutes a lower portion facing the back plate assembly. The cleaning liquid is ejected from the surface and the cleaning liquid that hits the lower surface of the back plate assembly and bounces back is directed toward the main body.
再者,本案揭示了一種鍍覆裝置作為一實施型態,其進一步包含傾斜機構,該傾斜機構構成使前述基板固持器傾斜的態樣,前述接觸件清洗構件構成朝向前述接觸構件之前述本體部吐出清洗液的態樣,前述接觸構件係安裝在藉由前述傾斜機構傾斜而位於相對較低位置的基板固持器上。Moreover, this application discloses a coating device as an implementation form, which further includes a tilting mechanism, the tilting mechanism constitutes a state in which the aforementioned substrate holder is tilted, and the aforementioned contact cleaning member constitutes the aforementioned body portion facing the aforementioned contact member In the aspect of discharging the cleaning liquid, the contact member is mounted on the substrate holder which is tilted by the tilt mechanism and is at a relatively lower position.
再者,本案揭示了一種鍍覆裝置作為一實施型態,其進一步包含驅動機構,該驅動機構構成使前述接觸件清洗構件在清洗位置與退避位置之間移動的態樣;該清洗位置係在前述鍍覆槽與前述基板固持器之間的位置;該退避位置係從前述鍍覆槽與前述基板固持器之間退避的位置。Moreover, this case discloses a coating device as an implementation form, which further includes a driving mechanism, which constitutes a mode for moving the aforementioned contact cleaning member between the cleaning position and the retracted position; the cleaning position is in the A position between the coating tank and the substrate holder; the withdrawn position is a position withdrawn from between the coating tank and the substrate holder.
再者,本案揭示了一種鍍覆裝置作為一實施型態,其進一步包含托盤構件,該托盤構件配置於前述接觸件清洗構件的下方,且構成承接從前述接觸件清洗構件吐出而落下之清洗液的態樣。Moreover, this case discloses a plating device as an implementation form, which further includes a tray member, which is arranged below the contact cleaning member and configured to receive the cleaning liquid spouted and dropped from the contact cleaning member appearance.
再者,本案揭示了一種鍍覆裝置作為一實施型態,其中,前述接觸件清洗構件包含將清洗液吐出成扇狀或直線狀的接觸件清洗噴嘴。Furthermore, this application discloses a coating device as an implementation form, wherein the aforementioned contact cleaning member includes a contact cleaning nozzle that discharges cleaning liquid in a fan shape or a linear shape.
再者,本案揭示了一種接觸件清洗方法作為一實施型態,其包含:使接觸件清洗噴嘴朝向安裝在基板固持器之接觸構件的步驟;旋轉步驟,使前述基板固持器旋轉;及接觸件清洗步驟,從前述接觸件清洗噴嘴朝向比前述接觸構件之基板接點往更上方延伸的本體部吐出清洗液。Furthermore, this application discloses a contact cleaning method as an implementation form, which includes: the step of directing the contact cleaning nozzle toward the contact member installed on the substrate holder; the rotating step of rotating the substrate holder; and the contact In the cleaning step, the cleaning liquid is discharged from the contact cleaning nozzle toward the body portion extending above the substrate contact of the contact member.
再者,本案揭示了一種接觸件清洗方法作為一實施型態,其進一步包含配置步驟,將前述基板固持器的背板組合件配置於由前述接觸構件所包圍的位置,前述接觸件清洗步驟構成朝向前述背板組合件的下表面吐出清洗液並使撞到前述背板組合件的下表面而反彈回來的清洗液朝向前述本體部的態樣。Moreover, this case discloses a method for cleaning contacts as an implementation form, which further includes a disposing step of disposing the back plate assembly of the aforementioned substrate holder at a position surrounded by the aforementioned contact members, and the aforementioned contact cleaning step constitutes A state in which cleaning liquid is spouted toward the lower surface of the back plate assembly and the cleaning liquid hits the lower surface of the back plate assembly and bounces back toward the main body.
再者,本案揭示了一種接觸件清洗方法作為一實施型態,其進一步包含使前述基板固持器傾斜的傾斜步驟,前述清洗步驟係對於接觸構件執行,該接觸構件係安裝在藉由前述傾斜步驟傾斜而位於相對較低位置的基板固持器上。Furthermore, the present application discloses a cleaning method for contacts as an implementation form, which further includes a tilting step of tilting the aforementioned substrate holder, and the aforementioned cleaning step is performed on the contact member installed on the Inclined and relatively low on the substrate holder.
再者,本案揭示了一種接觸件清洗方法作為一實施型態,其進一步包含:傾斜解除步驟,使藉由前述傾斜步驟而傾斜之基板固持器回到傾斜前的狀態;及濕潤步驟,對於藉由前述傾斜解除步驟而呈水平的基板固持器之接觸構件吐出清洗液。Moreover, this case discloses a method for cleaning contacts as an implementation form, which further includes: a tilt releasing step, returning the substrate holder tilted by the aforementioned tilting step to the state before tilting; and a wetting step, for The cleaning liquid is discharged from the contact member of the substrate holder which has been made horizontal by the aforementioned tilt releasing step.
100:裝載埠100: Loading port
110:搬運機器人110: Handling robot
120:對準器120: aligner
300:預浸模組300: Prepreg module
400:鍍覆模組400: Plating module
405:溢流槽405: overflow tank
410:鍍覆槽410: Plating tank
420:隔膜420: Diaphragm
422:陰極區域422: cathode area
424:陽極區域424: anode area
430:陽極430: anode
440:基板固持器440: Substrate holder
442:升降機構442: lifting mechanism
446:旋轉機構446: Rotary Mechanism
447:傾斜機構447: tilt mechanism
450:阻力體450: resistance body
460:蓋體構件460: cover body component
461:側壁461: side wall
461a:開口461a: opening
462:底壁462: bottom wall
464:排氣口464: Exhaust port
467:開閉機構467: opening and closing mechanism
468-1:第1門板468-1: 1st door panel
468-1a:旋轉軸468-1a: Axis of rotation
468-2:第2門板468-2: 2nd door panel
468-2a:旋轉軸468-2a: Axis of rotation
469-1:第1門板驅動構件469-1: 1st door panel drive member
469-2:第2門板驅動構件469-2: 2nd door panel drive member
470:清洗裝置470: cleaning device
471:管路471: pipeline
472:基板清洗構件472: Substrate cleaning components
472a:基板清洗噴嘴472a: Substrate cleaning nozzle
472b:密封清洗噴嘴472b: Seal wash nozzle
473:虛線473: dotted line
474:臂部474: arm
475:虛線箭頭475: dotted arrow
476:驅動機構476: drive mechanism
478:托盤構件478: Pallet component
478A:托盤構件478A: Pallet member
478A-1:第1托盤478A-1: 1st pallet
478A-2:第2托盤478A-2: The second pallet
478A-3:連結托盤478A-3: link tray
478A-4:排液管路478A-4: Drain Line
478a:前端部478a: front end
478B:托盤構件478B: Pallet components
478B-1:托盤478B-1: Tray
478B-2:排液管路478B-2: Drain line
478C:托盤構件478C: Pallet components
478C-1:三角形托盤478C-1: Triangular Tray
478C-2:排液管路478C-2: Drain line
481:管路481: pipeline
482:接觸件清洗構件482: Contact cleaning components
482a:接觸件清洗噴嘴482a: Contact cleaning nozzle
484:固定托盤構件484: Fixed pallet component
486:導電度計486: Conductivity Meter
488:排液管488: drain pipe
491:旋轉軸491:Rotary axis
492:背板組合件492: Backplane Assembly
492-1:背板492-1: Backplane
492-2:浮動板492-2: floating plate
492-3:壓附機構492-3: Press attachment mechanism
492-4:浮動機構492-4: Floating mechanism
494:支撐機構494: Support mechanism
494-1:支撐構件494-1: Support member
494-1a:凸緣494-1a: Flange
494-2:密封構件494-2: sealing member
494-3:台座494-3: Pedestal
494-4:接觸構件494-4: Contact member
494-4a:基板接點494-4a: Substrate contact
494-4b:本體部494-4b: body part
494-5:導電構件494-5: Conductive member
496:柱構件496: column member
600:旋轉沖洗乾燥機600: Spin Rinse Dryer
700:搬運裝置700: Handling device
800:控制模組800: Control module
1000:鍍覆裝置1000: Plating device
α:圖表α: chart
β:圖表β: Chart
Hi:位置Hi: Location
Lo:位置Lo: location
Wf:基板Wf: Substrate
Wf-a:被鍍覆面Wf-a: plated surface
圖1係顯示本實施型態的鍍覆裝置之整體構成的立體圖。 圖2係顯示本實施型態的鍍覆裝置之整體構成的俯視圖。 圖3係概略顯示本實施型態的鍍覆模組之構成的縱剖面圖。 圖4係概略顯示本實施型態的鍍覆模組之構成的立體圖。 圖5A係示意顯示本實施型態的鍍覆模組之蓋體構件的立體圖。 圖5B係示意顯示本實施型態的鍍覆模組之蓋體構件的俯視圖。 圖6係示意顯示本實施型態的鍍覆模組之蓋體構件的縱剖面圖。 圖7A係示意顯示變化例之蓋體構件的立體圖。 圖7B係示意顯示變化例之蓋體構件的立體圖。 圖8係概略顯示本實施型態的鍍覆模組之構成的俯視圖。 圖9係概略顯示本實施型態的鍍覆模組之構成的俯視圖。 圖10係概略顯示本實施型態的鍍覆模組之構成的縱剖面圖。 圖11係概略顯示將本實施型態的鍍覆模組之構成之一部分放大的縱剖面圖。 圖12A係示意顯示基板的旋轉方向與基板清洗噴嘴之配置關係的圖。 圖12B係顯示基板清洗噴嘴之清洗液吐出方向的變化例的圖。 圖13係顯示本實施型態所進行之清洗與比較例所進行之清洗的結果的圖。 圖14係概略顯示變化例的鍍覆模組之構成的側視圖。 圖15A係概略顯示變化例的鍍覆模組之構成的俯視圖。 圖15B係從圖15A所示之鍍覆模組的箭頭B方向觀看的側視示意圖。 圖16A係概略顯示變化例的鍍覆模組之構成的俯視圖。 圖16B係從圖16A所示之鍍覆模組的箭頭B方向觀看的側視示意圖。 圖17A係示意顯示變化例之托盤構件的俯視圖。 圖17B係示意顯示變化例之托盤構件的俯視圖。 圖17C係示意顯示變化例之托盤構件的俯視圖。 圖18係示意顯示以本實施型態之鍍覆模組清洗接觸構件的圖。 圖19係示意顯示以本實施型態之鍍覆模組清洗接觸構件的圖。 圖20係示意顯示以本實施型態之鍍覆模組清洗接觸構件的圖。 圖21係示意顯示接觸件清洗噴嘴之變化例的圖。 圖22係顯示本實施型態之基板清洗方法及接觸件清洗方法的流程圖。 FIG. 1 is a perspective view showing the overall configuration of a coating device of this embodiment. Fig. 2 is a plan view showing the overall configuration of the coating device of this embodiment. Fig. 3 is a longitudinal sectional view schematically showing the constitution of the coating module of this embodiment. FIG. 4 is a perspective view schematically showing the composition of the coating module of this embodiment. FIG. 5A is a perspective view schematically showing the cover member of the coating module of this embodiment. FIG. 5B is a top view schematically showing the cover member of the coating module of this embodiment. Fig. 6 is a longitudinal sectional view schematically showing the cover member of the coating module of the present embodiment. Fig. 7A is a perspective view schematically showing a cover member of a modification. Fig. 7B is a perspective view schematically showing a cover member of a modification. FIG. 8 is a top view schematically showing the composition of the coating module of this embodiment. FIG. 9 is a top view schematically showing the composition of the coating module of this embodiment. Fig. 10 is a longitudinal sectional view schematically showing the constitution of the coating module of this embodiment. Fig. 11 is an enlarged longitudinal sectional view schematically showing a part of the configuration of the coating module of the present embodiment. FIG. 12A is a diagram schematically showing the relationship between the rotation direction of the substrate and the arrangement of substrate cleaning nozzles. FIG. 12B is a diagram showing a variation example of the discharge direction of the cleaning liquid from the substrate cleaning nozzle. Fig. 13 is a graph showing the results of cleaning performed in the present embodiment and cleaning performed in the comparative example. Fig. 14 is a side view schematically showing the configuration of a plating module according to a modification. Fig. 15A is a plan view schematically showing the configuration of a plating module according to a modified example. FIG. 15B is a schematic side view viewed from the arrow B direction of the coating module shown in FIG. 15A . Fig. 16A is a plan view schematically showing the configuration of a plating module of a modification. FIG. 16B is a schematic side view viewed from the arrow B direction of the coating module shown in FIG. 16A . Fig. 17A is a top view schematically showing a tray member of a modification. Fig. 17B is a top view schematically showing a tray member of a modification. Fig. 17C is a top view schematically showing a tray member of a modification. Fig. 18 is a diagram schematically showing cleaning of the contact member with the plating module of this embodiment. Fig. 19 is a diagram schematically showing cleaning of the contact member with the coating module of this embodiment. Fig. 20 is a diagram schematically showing cleaning of the contact member with the plating module of this embodiment. Fig. 21 is a diagram schematically showing a modified example of the contact cleaning nozzle. FIG. 22 is a flow chart showing the method for cleaning the substrate and the method for cleaning the contacts in this embodiment.
478:托盤構件 478: Pallet component
482:接觸件清洗構件 482: Contact cleaning components
482a:接觸件清洗噴嘴 482a: Contact cleaning nozzle
492-2:浮動板 492-2: floating plate
494-1:支撐構件 494-1: Support member
494-1a:凸緣 494-1a: Flange
494-2:密封構件 494-2: sealing member
494-3:台座 494-3: Pedestal
494-4:接觸構件 494-4: Contact member
494-4a:基板接點 494-4a: Substrate contact
494-4b:本體部 494-4b: body part
494-5:導電構件 494-5: Conductive member
Claims (9)
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TW202126395A (en) * | 2016-03-08 | 2021-07-16 | 日商荏原製作所股份有限公司 | Substrate cleaning device, substrate cleaning method, substrate processing device, and substrate drying device |
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TW202126395A (en) * | 2016-03-08 | 2021-07-16 | 日商荏原製作所股份有限公司 | Substrate cleaning device, substrate cleaning method, substrate processing device, and substrate drying device |
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