TWI798485B - Method for transferring mask pattern, polarizing mask and polarized exposure apparatus - Google Patents

Abstract

A method for transferring mask pattern is provided. A polarizing mask including a substrate, a polarizer layer and a patterned metal layer is provided, wherein the polarizer layer including a first polarizing region and a second polarizing region (or a light transmitting region) is disposed between the substrate and the patterned metal layer, and the patterned metal layer has the first opening pattern and the second opening pattern respectively corresponding to the first polarizing region and the second polarizing region (or a light transmitting region). Then, the first polarized light and the second polarized light having different polarization directions are used for the exposure process, wherein the first polarizing region only allows the first polarized light to pass through. After the double exposure process, the first photoresist layer pattern and the second photoresist pattern are sequentially formed on the photoresist layer. A polarizing mask and a polarized exposure apparatus are also provided.

Description

Mask pattern transfer method, polarizing mask and polarization exposure device

The invention relates to a mask pattern transfer technology, in particular to a mask pattern transfer method, a polarizing mask and a polarization exposure device.

In the manufacturing process of semiconductor integrated circuits, the microstructure manufacturing of integrated circuits requires the use of processes such as lithography and etching in appropriate material layers such as semiconductor substrates/film layers, dielectric material layers, or metal material layers. Form tiny feature patterns with precise dimensions. In traditional semiconductor technology, to form a patterned photoresist layer on a target material layer by using a photomask, first define a feature pattern in the patterned photoresist layer, and then transfer the feature pattern to the target material layer.

With the complexity of integrated circuits, the size of these feature patterns is continuously reduced, so the equipment used to generate feature patterns must meet the strict requirements of process resolution. The current single patterning method can no longer meet the resolution or process requirements for manufacturing micro-linewidth patterns. Therefore, most semiconductor companies now adopt multiple patterning (multiple patterning) methods, such as double patterning (double patterning) process, as a way to overcome the resolution limit of the lithography exposure device. Generally speaking, in a multiple patterning process, dense patterns (whose individual pattern size and/or inter-pattern spacing is below the resolution limit of a lithography device) are first disassembled into different masks. The patterns on these masks are then transferred to the photoresist layer, so that the patterns on different masks can be combined Synthesize the original target pattern. This multi-patterning method requires the use of multiple different masks, which inevitably increases the complexity and cost of the process.

The invention provides a photomask pattern transfer method, a polarized photomask and a polarization exposure device, wherein the photomask pattern transfer method has the advantages of reducing the alignment error between the photomask and the photoresist layer, and reducing the complexity of the process and reducing the Advantages of process cost.

The mask pattern transfer method provided by the present invention is to transfer the characteristic pattern of the polarizing mask to the photoresist layer on the target material. The mask pattern transfer method includes: providing the first polarized light and the second polarized light , the first polarized light and the second polarized light have different polarization directions; a polarizing mask is provided, the polarizing mask includes a substrate, a polarizing layer and a patterned metal layer, the polarizing layer is arranged on the substrate, and the polarizing The polarized layer includes a first polarized region, and the patterned metal layer is disposed on the polarized layer, so that the polarized layer is interposed between the substrate and the patterned metal layer, wherein the patterned metal layer has a first opening pattern and The second opening pattern, and the first opening pattern corresponds to the first polarization region; and performing two exposure processes, in which one exposure process uses the first polarized light, and the first polarization region allows the first polarized light Pass through and irradiate the photoresist layer through the first opening pattern to form a first photoresist layer pattern on the photoresist layer. The first photoresist layer pattern corresponds to the first opening pattern. In another exposure process, the second polarized light, the first polarized region does not allow the second polarized light to pass through.

In an embodiment of the present invention, the above-mentioned polarized layer further includes a second polarized region corresponding to the second opening pattern. When the second polarized light is used in the exposure process, the second polarized region allows the second The polarized light passes through and irradiates the photoresist layer through the second opening pattern to form a second photoresist layer pattern on the photoresist layer, and the second photoresist layer pattern corresponds to the second opening pattern.

In an embodiment of the present invention, the above-mentioned polarizing layer further includes a light-transmitting area and a non-light-transmitting area, the light-transmitting area corresponds to the second opening pattern, and the non-light-transmitting area is between the light-transmitting area and the first polarizer. of During the exposure process, when the second polarized light is used in the exposure process, the light-transmitting region allows the second polarized light to pass through, and irradiates the photoresist layer through the second opening pattern to form a second photoresist layer pattern on the photoresist layer, and the second light The resist pattern corresponds to the second opening pattern.

In an embodiment of the present invention, when the above-mentioned exposure process uses the first polarized light, the first polarized region and the light-transmitting region allow the first polarized light to pass through at the same time, so as to form the first photoresist on the photoresist layer at the same time. layer pattern and the third photoresist layer pattern, the third photoresist layer pattern corresponds to the second opening pattern. In one embodiment, the position of the third photoresist layer pattern corresponds to the position of the second photoresist layer pattern, and the superimposed pattern size of the second photoresist layer pattern and the third photoresist layer pattern is larger than the second opening pattern.

In an embodiment of the present invention, one of the above-mentioned first polarized light and the second polarized light is vertically polarized light, and the other is horizontally polarized light.

The polarizing mask provided by the present invention includes: a base material, a polarizing layer and a patterned metal layer. The base material has opposite first surface and second surface; the polarizing layer is arranged on the first surface of the base material, and the polarizing layer includes a first polarizing area for the first polarized light to pass through; the patterned metal layer is set In the polarizing layer, the polarizing layer is interposed between the substrate and the patterned metal layer, wherein the patterned metal layer has a first opening pattern and a second opening pattern, and the first opening pattern corresponds to the first polarization chemical area.

In an embodiment of the present invention, the above-mentioned polarized layer further includes a second polarized region, the second polarized region corresponds to the second opening pattern, and the second polarized region can pass through the second polarized light , and the second polarized light and the first polarized light have different polarization directions.

In an embodiment of the present invention, the above-mentioned polarizing layer further includes a light-transmitting area and a non-light-transmitting area, the light-transmitting area corresponds to the second opening pattern, and the non-light-transmitting area is between the light-transmitting area and the first polarizer. between chemical regions.

In an embodiment of the present invention, the material of the above-mentioned base material is quartz, and the material of the patterned metal layer is chrome.

The polarization exposure device provided by the present invention includes: a light source, a first polarizing plate, a second polarizing plate, and a polarizing mask. The light source provides an exposure beam; the exposure beam is converted into a first polarized light by a first polarizing plate, and the exposure beam is converted into a second polarized light by a second polarizing plate, and the second polarized light and the first polarized light have different polarization directions; the polarized light The cover includes a base material, a polarizing layer and a patterned metal layer, wherein the base material has a first surface and a second surface opposite to each other, the second surface faces the light source, the polarizing layer is arranged on the first surface of the base material, and the polarizing layer is arranged on the first surface of the base material. The polarized layer includes a first polarized region, the first polarized region allows the first polarized light to pass through, but does not allow the second polarized light to pass through, the patterned metal layer is arranged on the polarized layer, so that the polarized layer is separated Between the substrate and the patterned metal layer, wherein the patterned metal layer has a first opening pattern and a second opening pattern, and the first opening pattern corresponds to the first polarization region.

In an embodiment of the present invention, the above-mentioned polarizing layer further includes a second polarizing region, the second polarizing region corresponds to the second opening pattern, and the second polarizing region allows the second polarized light to pass through.

In an embodiment of the present invention, the above-mentioned polarizing layer further includes a light-transmitting area and a non-light-transmitting area, the light-transmitting area corresponds to the second opening pattern, and the non-light-transmitting area is between the light-transmitting area and the first polarizer. Among them, the transparent area allows the first polarized light and the second polarized light to pass through.

The photomask pattern transfer method of the present invention uses the same polarizing mask to undergo two exposure processes of different polarized light to form a first photoresist layer pattern and a second photoresist layer pattern on the photoresist layer, and the polarizer mask includes a substrate , a polarizing layer and a patterned metal layer, and the polarizing layer is between the substrate and the patterned metal layer, and the polarizing layer includes a first polarizing region and a second polarizing region with different polarization directions region, or include a first polarization region and a light-transmitting region. Because the mask pattern transfer method of the present invention only uses a single polarizing mask, it will reduce the alignment error between the mask and the photoresist layer that is easily caused when using multiple masks, and reduce the number of polarizers caused by using multiple different polarizing masks. The process complexity and high process cost caused by the patterned photomask.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

10: Polarization exposure device

12: Light source

L: exposure beam

14: The first polarizing plate

16: Second polarizing plate

L1: first polarized light

L2: second polarized light

18, 18A: polarizing mask

181: Open area

20: Substrate

22, 22A: Polarization layer

221, 221A: the first polarization region

222: the second polarization area

223: Translucent area

224: non-transparent area

24, 24A: patterned metal layer

241, 241A: first opening pattern

242, 242A: second opening pattern

S30, S32, S34: steps

40: Target material

42: photoresist layer

421, 421A: the pattern of the first photoresist layer

422, 422A, 422A': second photoresist layer pattern

423: The third photoresist layer pattern

424: The fourth photoresist layer pattern

FIG. 1 is a schematic diagram of a polarization exposure device according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a polarizing mask according to a first embodiment of the present invention.

FIG. 3 a and FIG. 3 b are schematic schematic diagrams of patterned metal layers and polarized layers, respectively, according to a first embodiment of the present invention.

FIG. 4 is a schematic flowchart of a photomask pattern transfer method according to an embodiment of the present invention.

Figure 5a and Figure 5b are schematic diagrams of the photoresist layer pattern defined by the photoresist layer in the first exposure and the second exposure of the first embodiment of the present invention, respectively, and Figure 5c is the photoresist layer shown in Figures 5a and 5b Schematic diagram of the combination of patterns.

FIG. 6 is a schematic cross-sectional view of a polarizing mask according to a second embodiment of the present invention.

FIG. 7a and FIG. 7b are schematic schematic diagrams of patterned metal layer and polarized layer, respectively, according to a second embodiment of the present invention.

Figure 8a and Figure 8b are schematic diagrams of the photoresist layer pattern defined by the photoresist layer in the first exposure and the second exposure of a second embodiment of the present invention, respectively, and Figure 8c is the photoresist layer shown in Figures 8a and 8b Schematic diagram of the combination of patterns.

Fig. 1 is the schematic diagram of polarization exposure device of one embodiment of the present invention, as shown in the figure, polarization exposure device 10 comprises light source 12, first polarizer 14 and second polarizer 16, and polarizer Mask 18. The light source 12 provides the exposure beam L; the first polarizing plate 14 and the second polarizing plate 16 are arranged on the optical path of the exposure beam L, the first polarizing plate 14 and the second polarizing plate 16 can absorb a predetermined polarized light component, and transmit other polarized light components, so that the incident exposure light beam L is transmitted along a specified direction. In one embodiment, the first polarizing plate 14 and the second polarizing plate 16 are both linear polarizers, and their polarization axes are set as are perpendicular to each other, wherein the exposure beam L is converted into the first polarized light L1 by the first polarizing plate 14, the exposure beam L is converted into the second polarized light L2 by the second polarizing plate 16, the second polarized light L2 and the first polarized light L1 With different polarization directions, in one embodiment, one of the first polarized light L1 and the second polarized light L2 may be vertically polarized light, and the other may be horizontally polarized light.

The polarizing mask 18 is disposed on the optical paths of the first polarized light L1 and the second polarized light L2. 2 is a schematic cross-sectional view of a polarizing mask according to a first embodiment of the present invention. The polarizing mask 18 includes a substrate 20, a polarizing layer 22, and a patterned metal layer 24, wherein the substrate 20 has an opposite first surface 201 and The second surface 202, in one embodiment, the second surface 202 faces the light source (shown in FIG. 1 ), that is, faces the incidence of the first polarized light L1/second polarized light L2; the polarizing layer 22 is arranged on the substrate On the first surface 201 of the substrate 20 , the patterned metal layer 24 is disposed on the polarized layer 22 such that the polarized layer 22 is interposed between the substrate 20 and the patterned metal layer 24 . In one embodiment, the material of the substrate 20 is, for example, quartz, and the material of the patterned metal layer 24 is, for example, chrome. Figure 3a and Figure 3b are schematic diagrams of the patterns of the patterned metal layer and the polarizing layer respectively in a first embodiment of the present invention, as shown in Figure 3a, the patterned metal layer 24 has a first opening pattern 241 and a second opening pattern 242. In FIG. 3a, for convenience of description, the first opening pattern 241 and the second opening pattern 242 are separated by dashed lines, and the patterned metal layer 24 of the polarizing mask 18 shown in FIG. It is a schematic cross-sectional view of the patterned metal layer 24 along line AA shown in FIG. 3a. As shown in Figure 3b, in the first embodiment, the polarizing layer 22 includes a first polarizing region 221 and a second polarizing region 222, wherein the first polarizing region 221 allows the first polarized light L1 to pass through , but does not allow the second polarized light L2 to pass through, the second polarized The polarized region 222 allows the second polarized light L2 to pass through, but does not allow the first polarized light L1 to pass through, as shown in Figure 3a and Figure 3b, the first polarized region 221 corresponds to the first opening pattern 241, and the second polarized light The area 222 corresponds to the second opening pattern 242 .

Continuing the above description, FIG. 4 is a schematic flow chart of a photomask pattern transfer method according to an embodiment of the present invention. Please also refer to FIG. layer 42, the photomask pattern transfer method includes aligning the polarizing mask 18 with the appropriate position of the target material 40 covered with the photoresist layer 42, which is step S30; then two exposure processes are performed, for example in step S32 In this process, the first polarized light L1 and the second polarized light L2 with different polarization directions are respectively used to expose the photoresist layer 42 through the polarizing mask 18, so as to sequentially form the first photoresist layer pattern on the photoresist layer 42 421 (shown in subsequent Figure 5a) and a second photoresist layer pattern 422 (shown in subsequent Figure 5b); the first photoresist layer pattern 421 and the second photoresist layer pattern 422 will be subsequently not shown This is step S34 , to form photoresist layer openings (not shown) corresponding to the first opening pattern 241 and the second opening pattern 242 on the photoresist layer 42 .

Figure 5a and Figure 5b are schematic diagrams of the photoresist layer pattern defined by the photoresist layer in the first exposure and the second exposure of the first embodiment of the present invention, respectively, and Figure 5c is the photoresist layer shown in Figures 5a and 5b Schematic diagram of the combination of patterns. In this embodiment, the polarizing mask 18 described in the first embodiment is used (the patterns of the patterned metal layer 24 and the polarizing layer 22 are shown in FIG. 3a and FIG. 3b respectively), and the first exposure The process uses the first polarized light L1, and the second exposure process uses the second polarized light L2 as an illustration, but it is not limited thereto. In other embodiments, the second polarized light L2 can also be used in the first exposure process, and the second The secondary exposure process uses the first polarized light L1. In the first exposure process, the first polarized light L1 is used to enter the polarizing mask 18, because the first polarized region 221 of the polarizing layer 22 of the polarizing mask 18 allows the first polarized light L1 to pass through, while the second The second polarization region 222 does not allow the first polarized light L1 to pass through, so the first polarized light L1 passing through the polarizing mask 18 is irradiated to the photoresist layer 42 through the first polarization region 221 and the first opening pattern 241, so as to The photoresist layer 42 forms the first photoresist The layer pattern 421 , as shown in FIG. 5 a , the first photoresist layer pattern 421 corresponds to the first opening pattern 241 of the patterned metal layer 24 . In the second exposure process, the second polarized light L2 is used to enter the polarizing mask 18, because the first polarized region 221 of the polarizing layer 22 of the polarizing mask 18 does not allow the second polarized light L2 to pass through, and The second polarization region 222 allows the second polarized light L2 to pass through, so the second polarized light L2 passing through the polarizing mask 18 is irradiated to the photoresist layer 42 through the second polarization region 222 and the second opening pattern 242, so that The photoresist layer 42 forms a second photoresist layer pattern 422 . As shown in FIG. 5 b , the second photoresist layer pattern 422 corresponds to the second opening pattern 242 of the patterned metal layer 24 . As shown in FIG. 5c, the combination of the first photoresist layer pattern 421 and the second photoresist layer pattern 422 formed after the photoresist layer 42 undergoes two exposure processes corresponds to the first photoresist layer pattern 422 of the patterned metal layer 24 of the polarizing mask 18. A combination of an opening pattern 241 and a second opening pattern 242 .

Fig. 6 is a schematic cross-sectional view of a polarizing mask according to a second embodiment of the present invention, and Fig. 7a and Fig. 7b are schematic diagrams of patterns of a patterned metal layer and a polarizing layer respectively according to a second embodiment of the present invention, wherein Fig. 6 shows The illustrated patterned metal layer 24A of the polarizing mask 18A is a schematic cross-sectional view of the patterned metal layer 24A along line BB shown in FIG. 7 a . As shown in Figure 6, the polarizing mask 18A comprises a substrate 20, a polarizing layer 22A and a patterned metal layer 24A, the polarizing layer 22A is disposed on the first surface 201 of the substrate 20, and the patterned metal layer 24A is disposed on Polarization layer 22A, so that the polarization layer 22A is interposed between the substrate 20 and the patterned metal layer 24A. In one embodiment, the polarization layer 22A and the patterned metal layer 24A do not cover the entire substrate 20 The first surface 201 forms an open area 181 in the polarizing mask 18A. Also as shown in FIG. 7a, the patterned metal layer 24A has a first opening pattern 241A and a second opening pattern 242A; as shown in FIG. 7b, in the second embodiment, the polarization layer 22A includes a first polarization region 221A, the light-transmitting area 223 and the non-light-transmitting area 224, wherein, the first polarization area 221A allows the first polarized light L1 to pass through, but does not allow the second polarized light L2 to pass through. In one embodiment, the first polarized light The chemicalized area 221A corresponds to the first opening pattern 241A of the patterned metal layer 24A; The configuration of the region 223 corresponds to the second opening pattern 242A of the patterned metal layer 24A; the non-transmissive region 224 is disposed between the first polarization region 221A and the translucent region 223, and the non-transmissive region 224 does not allow the first polarization The light L1 and the second polarized light L2 pass through.

Continuing the above description, Fig. 8a and Fig. 8b are schematic diagrams of the photoresist layer pattern defined by the photoresist layer in the first exposure and the second exposure of a second embodiment of the present invention respectively, and Fig. 8c is shown in Fig. 8a and 8b The combined schematic diagram of the photoresist layer pattern. In this embodiment, the polarizing mask 18A described in the second embodiment is used (the patterns of the patterned metal layer 24A and the polarizing layer 22A are shown in FIG. 7a and FIG. 7b respectively), and the first exposure The process uses the second polarized light L2, and the second exposure process uses the first polarized light L1 as an illustration, but it is not limited thereto. In other embodiments, the first polarized light L1 can also be used in the first exposure process, and the second The secondary exposure process uses the second polarized light L2.

Continuing the above description, in the first exposure process, the second polarized light L2 is used to enter the polarizing mask 18A, since only the light-transmitting region 223 of the polarizing layer 22A of the polarizing mask 18A allows the second polarized light L2 to pass through, so The second polarized light L2 passing through the polarizing mask 18A is irradiated to the photoresist layer 42 through the light-transmitting area 223 and the second opening pattern 242A, so as to form a second photoresist layer pattern 422A on the photoresist layer 42, as shown in FIG. 8a, The second photoresist layer pattern 422A corresponds to the second opening pattern 242A of the patterned metal layer 24A; A pattern is formed, for example, the pattern 424 of the fourth photoresist layer.

In the second exposure process, the first polarized light L1 is used to enter the polarizing mask 18A, and since the first polarizing region 221A and the light-transmitting region 223 both allow the first polarized light L1 to pass through, the first polarized light passing through the polarizing mask 18A A polarized light L1 is irradiated to the photoresist layer 42 through the first polarization region 221A and the first opening pattern 241A below it, and the light-transmitting region 223 and the second opening pattern 242A below it, so as to form a first polarization pattern on the photoresist layer 42 . A photoresist layer pattern 421A and a third photoresist layer pattern 423, as shown in FIG. The second opening pattern in the patterned metal layer 24A 242A, in one embodiment, the third photoresist layer pattern 423 corresponds to the second photoresist layer pattern 422A, that is, the second photoresist layer pattern 422A and the third photoresist layer pattern 423 are located on the same side of the photoresist layer 42 Because the same position of the photoresist layer 42 corresponding to the second opening pattern 242A has undergone two exposures, as shown in FIG. The size of the second photoresist layer pattern 422A′ after the superposition of the photoresist layer pattern 423 will be slightly larger than the size of the second opening pattern 242A. In the second exposure process, the first polarized light L1 will also pass through the open area 181 of the polarizing mask 18A, and form the fourth photoresist layer pattern 424 on the photoresist layer 42 again.

In the present invention, at least a first photoresist layer pattern and a second photoresist layer pattern are formed on the photoresist layer through two exposure processes with different polarized light using the same polarizing mask. Since only a single polarizing mask is used, the alignment error between the mask and the photoresist layer that is easily caused when using multiple masks will be reduced. The pattern transfer accuracy between the opening pattern of the photoresist layer formed by the subsequent developing process and the characteristic pattern of the polarizing mask will be better. On the other hand, since the embodiment of the present invention does not need to use multiple photomasks with different patterns, it has the advantages of reducing the complexity and cost of the manufacturing process.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field of the present invention can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application.

10: Polarization exposure device

12: Light source

L: exposure beam

14: The first polarizing plate

16: Second polarizing plate

L1: first polarized light

L2: second polarized light

18: Polarization mask

40: Target material

42: photoresist layer

Claims (10)

A photomask pattern transfer method, which is to transfer a characteristic pattern of a polarizing mask to a photoresist layer on a target material, the photomask pattern transfer method includes: providing a first polarized light and a first polarized light Two polarized lights, the first polarized light and the second polarized light have different polarization directions; a polarized mask is provided, the polarized mask includes a base material, a polarized layer and a patterned metal layer, the polarized light The polarizing layer is disposed on the substrate, and the polarizing layer includes a first polarizing region, a light-transmitting region and a non-light-transmitting region, wherein the non-light-transmitting region is between the light-transmitting region and the first Between the polarized regions; the patterned metal layer is disposed on the polarized layer, so that the polarized layer is between the substrate and the patterned metal layer, and the patterned metal layer has a first an opening pattern and a second opening pattern, and the first opening pattern corresponds to the first polarization region, and the second opening pattern corresponds to the light-transmitting region; and performing two exposure processes, one of which is the exposure process wherein, using the first polarized light, the first polarized region allows the first polarized light to pass through, and irradiates the photoresist layer through the first opening pattern, so as to form a first photoresist on the photoresist layer layer pattern, the first photoresist layer pattern corresponds to the first opening pattern, in another exposure process, the second polarized light is used, the first polarized region does not allow the second polarized light to pass through, and the transparent The light area allows the second polarized light to pass through, and irradiates the photoresist layer through the second opening pattern, so as to form a second photoresist layer pattern on the photoresist layer, and the second photoresist layer pattern corresponds to the second Opening pattern. The photomask pattern transfer method according to claim 1, wherein the polarized layer further includes a second polarized region corresponding to the second opening pattern, when the exposure process uses the second polarized light , the second polarization region allows the second polarized light to pass through, and irradiates the photoresist through the second opening pattern layer to form a second photoresist layer pattern on the photoresist layer, and the second photoresist layer pattern corresponds to the second opening pattern. The mask pattern transfer method according to claim 1, wherein when the exposure process uses the first polarized light, the first polarized region and the light-transmitting region allow the first polarized light to pass through simultaneously, so that The first photoresist layer pattern and a third photoresist layer pattern are simultaneously formed on the photoresist layer, and the third photoresist layer pattern corresponds to the second opening pattern. The photomask pattern transfer method according to claim 3, wherein the position of the third photoresist layer pattern corresponds to the position of the second photoresist layer pattern, and the second photoresist layer pattern and the third photoresist layer pattern The pattern size of the stacked resist pattern is larger than the second opening pattern. The mask pattern transfer method according to claim 1, wherein one of the first polarized light and the second polarized light is vertically polarized light, and the other is horizontally polarized light. A polarizing mask comprising: a base material having a first surface opposite to a second surface; a polarizing layer disposed on the first surface of the base material, the polarizing layer comprising a first Polarization area, a light transmission area and a non-light transmission area, the first polarization area can pass a first polarized light, the non-light transmission area is between the light transmission area and the first polarization area and a patterned metal layer disposed on the polarized layer so that the polarized layer is between the substrate and the patterned metal layer, wherein the patterned metal layer has a first opening pattern and a second opening pattern, and the first opening pattern corresponds to the first polarization region, and the second opening pattern corresponds to the light-transmitting region. The polarizing mask according to claim 6, wherein the polarizing layer further includes a second polarizing region corresponding to the second opening pattern, and the second polarizing region A second polarized light can pass through, and the second polarized light and the first polarized light have different polarization directions. The polarizing mask according to claim 6, wherein the material of the substrate is quartz, and the material of the patterned metal layer is chrome. A polarized exposure device, comprising: a light source providing an exposure beam; a first polarizing plate and a second polarizing plate, the exposure beam is converted into a first polarized light by the first polarizing plate, and the exposure beam is passed through The second polarizing plate is converted into a second polarized light, and the second polarized light and the first polarized light have different polarization directions; and a polarizing mask, including: a base material, a polarizing layer and a pattern A metallized layer, wherein the substrate has a first surface opposite to a second surface, and the second surface faces the light source; the polarized layer is arranged on the first surface of the substrate, and the polarized The layer includes a first polarization area, a light transmission area and a non-light transmission area, wherein the first polarization area allows the first polarized light to pass through, but does not allow the second polarization light to pass through, and the light transmission area a region allows the first polarized light and the second polarized light to pass through, the non-transmissive region is between the light-transmitting region and the first polarized region; and the patterned metal layer is disposed on the polarized layer, making the polarizing layer between the substrate and the patterned metal layer, wherein the patterned metal layer has a first opening pattern and a second an opening pattern, and the first opening pattern corresponds to the first polarization region, and the second opening pattern corresponds to the light-transmitting region. The polarized exposure device as described in claim 9, wherein the polarized layer further includes a second polarized region, the second polarized region corresponds to the second opening pattern, and the second polarized The polarized region allows the second polarized light to pass through.

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