TWI798485B - Method for transferring mask pattern, polarizing mask and polarized exposure apparatus - Google Patents
Method for transferring mask pattern, polarizing mask and polarized exposure apparatus Download PDFInfo
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本發明是有關一種光罩圖案移轉技術,尤其是關於一種光罩圖案移轉方法、偏振光罩及偏極化曝光裝置。 The invention relates to a mask pattern transfer technology, in particular to a mask pattern transfer method, a polarizing mask and a polarization exposure device.
在半導體積體電路的製程中,積體電路的微結構製造需要在如半導體基材/膜層、介電材料層、或金屬材料層等適當的材料層中,利用如微影及蝕刻等製程形成具有精確尺寸之微小特徵圖案。在傳統的半導體技術中,為利用光罩於目標材料層上形成圖案化光阻層,以便先在圖案化光阻層中定義特徵圖案,隨後將特徵圖案轉移至目標材料層。 In the manufacturing process of semiconductor integrated circuits, the microstructure manufacturing of integrated circuits requires the use of processes such as lithography and etching in appropriate material layers such as semiconductor substrates/film layers, dielectric material layers, or metal material layers. Form tiny feature patterns with precise dimensions. In traditional semiconductor technology, to form a patterned photoresist layer on a target material layer by using a photomask, first define a feature pattern in the patterned photoresist layer, and then transfer the feature pattern to the target material layer.
隨著積體電路的複雜化,這些特徵圖案的尺寸不斷地減小,所以用來產生特徵圖案的設備就必須滿足製程解析度的嚴格要求。目前單一圖案化(single patterning)方法已無法滿足製造微小線寬圖案之解析度或製程需求。是以,半導體業者現在大都採用多重圖案化(multiple patterning)方法,例如雙重圖案化(double patterning)製程,作為克服微影曝光裝置之解析度極限的途徑。一般而言,在多重圖案化製程中,首先將緻密圖案(其個別圖案尺寸及/或圖案間間距低於微影裝置之解析度極限)拆解至不同的光罩。隨後將該等光罩上的圖案轉移至光阻層,故可使不同光罩上的圖案組 合成原始的目標圖案。此種多重圖案化方法須採用多個不同光罩,無可避免地增加了製程複雜度與製程成本。 With the complexity of integrated circuits, the size of these feature patterns is continuously reduced, so the equipment used to generate feature patterns must meet the strict requirements of process resolution. The current single patterning method can no longer meet the resolution or process requirements for manufacturing micro-linewidth patterns. Therefore, most semiconductor companies now adopt multiple patterning (multiple patterning) methods, such as double patterning (double patterning) process, as a way to overcome the resolution limit of the lithography exposure device. Generally speaking, in a multiple patterning process, dense patterns (whose individual pattern size and/or inter-pattern spacing is below the resolution limit of a lithography device) are first disassembled into different masks. The patterns on these masks are then transferred to the photoresist layer, so that the patterns on different masks can be combined Synthesize the original target pattern. This multi-patterning method requires the use of multiple different masks, which inevitably increases the complexity and cost of the process.
本發明提供一種光罩圖案移轉方法、偏振光罩及偏極化曝光裝置,其中光罩圖案移轉方法具有減少光罩與光阻層之間的對準誤差,且降低製程複雜度及減少製程成本的優點。 The invention provides a photomask pattern transfer method, a polarized photomask and a polarization exposure device, wherein the photomask pattern transfer method has the advantages of reducing the alignment error between the photomask and the photoresist layer, and reducing the complexity of the process and reducing the Advantages of process cost.
本發明所提供的光罩圖案移轉方法,其係將偏振光罩的特徵圖案移轉至目標材料上的光阻層,光罩圖案移轉方法包含:提供第一偏振光及第二偏振光,第一偏振光及第二偏振光具有不同的偏振方向;提供偏振光罩,偏振光罩包含基材、偏極化層及圖案化金屬層,偏極化層設置於基材上,偏極化層包含第一偏極化區,圖案化金屬層設置於偏極化層上,使偏極化層介於基材及圖案化金屬層之間,其中圖案化金屬層具有第一開口圖案及第二開口圖案,且第一開口圖案對應於第一偏極化區;以及進行兩次曝光製程,在其中一次曝光製程中,使用第一偏振光,第一偏極化區允許第一偏振光通過,且經第一開口圖案照射至光阻層,以在光阻層形成第一光阻層圖案,第一光阻層圖案對應第一開口圖案,在另一次曝光製程中,使用第二偏振光,第一偏極化區不允許第二偏振光通過。 The mask pattern transfer method provided by the present invention is to transfer the characteristic pattern of the polarizing mask to the photoresist layer on the target material. The mask pattern transfer method includes: providing the first polarized light and the second polarized light , the first polarized light and the second polarized light have different polarization directions; a polarizing mask is provided, the polarizing mask includes a substrate, a polarizing layer and a patterned metal layer, the polarizing layer is arranged on the substrate, and the polarizing The polarized layer includes a first polarized region, and the patterned metal layer is disposed on the polarized layer, so that the polarized layer is interposed between the substrate and the patterned metal layer, wherein the patterned metal layer has a first opening pattern and The second opening pattern, and the first opening pattern corresponds to the first polarization region; and performing two exposure processes, in which one exposure process uses the first polarized light, and the first polarization region allows the first polarized light Pass through and irradiate the photoresist layer through the first opening pattern to form a first photoresist layer pattern on the photoresist layer. The first photoresist layer pattern corresponds to the first opening pattern. In another exposure process, the second polarized light, the first polarized region does not allow the second polarized light to pass through.
在本發明的一實施例中,上述之偏極化層更包含第二偏極化區,對應於第二開口圖案,當曝光製程使用第二偏振光時,第二偏極化區允許第二偏振光通過,且經第二開口圖案照射至光阻層,以在該光阻層形成第二光阻層圖案,第二光阻層圖案對應第二開口圖案。 In an embodiment of the present invention, the above-mentioned polarized layer further includes a second polarized region corresponding to the second opening pattern. When the second polarized light is used in the exposure process, the second polarized region allows the second The polarized light passes through and irradiates the photoresist layer through the second opening pattern to form a second photoresist layer pattern on the photoresist layer, and the second photoresist layer pattern corresponds to the second opening pattern.
在本發明的一實施例中,上述之偏極化層更包含透光區及非透光區,透光區對應於第二開口圖案,非透光區介於透光區及第一偏極化區之 間,當曝光製程使用第二偏振光時,透光區允許第二偏振光通過,且經第二開口圖案照射至光阻層,以在光阻層形成第二光阻層圖案,第二光阻層圖案對應第二開口圖案。 In an embodiment of the present invention, the above-mentioned polarizing layer further includes a light-transmitting area and a non-light-transmitting area, the light-transmitting area corresponds to the second opening pattern, and the non-light-transmitting area is between the light-transmitting area and the first polarizer. of During the exposure process, when the second polarized light is used in the exposure process, the light-transmitting region allows the second polarized light to pass through, and irradiates the photoresist layer through the second opening pattern to form a second photoresist layer pattern on the photoresist layer, and the second light The resist pattern corresponds to the second opening pattern.
在本發明的一實施例中,當上述之曝光製程使用第一偏振光時,第一偏極化區及透光區同時允許第一偏振光通過,以在光阻層同時形成第一光阻層圖案及第三光阻層圖案,第三光阻層圖案對應第二開口案。於一實施例中,第三光阻層圖案的位置對應於第二光阻層圖案的位置,且第二光阻層圖案及第三光阻層圖案疊加後的圖案尺寸大於第二開口圖案。 In an embodiment of the present invention, when the above-mentioned exposure process uses the first polarized light, the first polarized region and the light-transmitting region allow the first polarized light to pass through at the same time, so as to form the first photoresist on the photoresist layer at the same time. layer pattern and the third photoresist layer pattern, the third photoresist layer pattern corresponds to the second opening pattern. In one embodiment, the position of the third photoresist layer pattern corresponds to the position of the second photoresist layer pattern, and the superimposed pattern size of the second photoresist layer pattern and the third photoresist layer pattern is larger than the second opening pattern.
在本發明的一實施例中,上述之第一偏振光及第二偏振光其中之一者為垂直偏振光,另一者為水平偏振光。 In an embodiment of the present invention, one of the above-mentioned first polarized light and the second polarized light is vertically polarized light, and the other is horizontally polarized light.
本發明所提供的偏振光罩,包含:基材、偏極化層以及圖案化金屬層。基材具有相對之第一表面及第二表面;偏極化層設置於基材的第一表面,偏極化層包含第一偏極化區可供第一偏振光通過;圖案化金屬層設置於偏極化層,使偏極化層介於基材及圖案化金屬層之間,其中圖案化金屬層具有第一開口圖案及第二開口圖案,且第一開口圖案對應於第一偏極化區。 The polarizing mask provided by the present invention includes: a base material, a polarizing layer and a patterned metal layer. The base material has opposite first surface and second surface; the polarizing layer is arranged on the first surface of the base material, and the polarizing layer includes a first polarizing area for the first polarized light to pass through; the patterned metal layer is set In the polarizing layer, the polarizing layer is interposed between the substrate and the patterned metal layer, wherein the patterned metal layer has a first opening pattern and a second opening pattern, and the first opening pattern corresponds to the first polarization chemical area.
在本發明的一實施例中,上述之偏極化層更包含第二偏極化區,第二偏極化區對應於第二開口圖案,第二偏極化區可供第二偏振光通過,且第二偏振光及第一偏振光具有不同的偏振方向。 In an embodiment of the present invention, the above-mentioned polarized layer further includes a second polarized region, the second polarized region corresponds to the second opening pattern, and the second polarized region can pass through the second polarized light , and the second polarized light and the first polarized light have different polarization directions.
在本發明的一實施例中,上述之偏極化層更包含透光區及非透光區,透光區對應於第二開口圖案,非透光區介於透光區及第一偏極化區之間。 In an embodiment of the present invention, the above-mentioned polarizing layer further includes a light-transmitting area and a non-light-transmitting area, the light-transmitting area corresponds to the second opening pattern, and the non-light-transmitting area is between the light-transmitting area and the first polarizer. between chemical regions.
在本發明的一實施例中,上述之基材的材質為石英,圖案化金屬層的材質為鉻。 In an embodiment of the present invention, the material of the above-mentioned base material is quartz, and the material of the patterned metal layer is chrome.
本發明所提供的偏極化曝光裝置,包含:光源、第一偏振板及第二偏振板以及偏振光罩。光源提供曝光光束;曝光光束經第一偏振板轉換為第一偏振光,曝光光束經第二偏振板轉換為第二偏振光,第二偏振光及第一偏振光具有不同的偏振方向;偏振光罩包含基材、偏極化層及圖案化金屬層,其中,基材具有相對之第一表面及第二表面,第二表面面向光源,偏極化層設置於基材的第一表面,偏極化層包含第一偏極化區,第一偏極化區允許第一偏振光通過,但不允許第二偏振光通過,圖案化金屬層設置於偏極化層,使偏極化層介於基材及圖案化金屬層之間,其中圖案化金屬層具有第一開口圖案及第二開口圖案,且第一開口圖案對應於第一偏極化區。 The polarization exposure device provided by the present invention includes: a light source, a first polarizing plate, a second polarizing plate, and a polarizing mask. The light source provides an exposure beam; the exposure beam is converted into a first polarized light by a first polarizing plate, and the exposure beam is converted into a second polarized light by a second polarizing plate, and the second polarized light and the first polarized light have different polarization directions; the polarized light The cover includes a base material, a polarizing layer and a patterned metal layer, wherein the base material has a first surface and a second surface opposite to each other, the second surface faces the light source, the polarizing layer is arranged on the first surface of the base material, and the polarizing layer is arranged on the first surface of the base material. The polarized layer includes a first polarized region, the first polarized region allows the first polarized light to pass through, but does not allow the second polarized light to pass through, the patterned metal layer is arranged on the polarized layer, so that the polarized layer is separated Between the substrate and the patterned metal layer, wherein the patterned metal layer has a first opening pattern and a second opening pattern, and the first opening pattern corresponds to the first polarization region.
在本發明的一實施例中,上述之偏極化層更包含第二偏極化區,第二偏極化區對應於第二開口圖案,第二偏極化區允許第二偏振光通過。 In an embodiment of the present invention, the above-mentioned polarizing layer further includes a second polarizing region, the second polarizing region corresponds to the second opening pattern, and the second polarizing region allows the second polarized light to pass through.
在本發明的一實施例中,上述之偏極化層更包含透光區及非透光區,透光區對應於第二開口圖案,非透光區介於透光區及第一偏極化區之間,其中透光區允許第一偏振光及第二偏振光通過。 In an embodiment of the present invention, the above-mentioned polarizing layer further includes a light-transmitting area and a non-light-transmitting area, the light-transmitting area corresponds to the second opening pattern, and the non-light-transmitting area is between the light-transmitting area and the first polarizer. Among them, the transparent area allows the first polarized light and the second polarized light to pass through.
本發明光罩圖案移轉方法採用同一偏振光罩經兩次不同偏振光的曝光製程,以在光阻層上形成第一光阻層圖案及第二光阻層圖案,偏振光罩包含基材、偏極化層及圖案化金屬層,且偏極化層介於基材及圖案化金屬層之間,偏極化層包含具有不同偏振方向的第一偏極化區及第二偏極化區,或者包含第一偏極化區及透光區。本發明光罩圖案移轉方法因僅使用單一偏振光罩,因此將減少使用多個光罩時所容易導致之光罩與光阻層之間的對準誤差,且降低因使用多個具不同圖案的光罩所導致之製程複雜度及高製程成本。 The photomask pattern transfer method of the present invention uses the same polarizing mask to undergo two exposure processes of different polarized light to form a first photoresist layer pattern and a second photoresist layer pattern on the photoresist layer, and the polarizer mask includes a substrate , a polarizing layer and a patterned metal layer, and the polarizing layer is between the substrate and the patterned metal layer, and the polarizing layer includes a first polarizing region and a second polarizing region with different polarization directions region, or include a first polarization region and a light-transmitting region. Because the mask pattern transfer method of the present invention only uses a single polarizing mask, it will reduce the alignment error between the mask and the photoresist layer that is easily caused when using multiple masks, and reduce the number of polarizers caused by using multiple different polarizing masks. The process complexity and high process cost caused by the patterned photomask.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下。 In order to make the above and other objects, features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
10:偏極化曝光裝置 10: Polarization exposure device
12:光源 12: Light source
L:曝光光束 L: exposure beam
14:第一偏振板 14: The first polarizing plate
16:第二偏振板 16: Second polarizing plate
L1:第一偏振光 L1: first polarized light
L2:第二偏振光 L2: second polarized light
18、18A:偏振光罩 18, 18A: polarizing mask
181:開放區 181: Open area
20:基材 20: Substrate
22、22A:偏極化層 22, 22A: Polarization layer
221、221A:第一偏極化區 221, 221A: the first polarization region
222:第二偏極化區 222: the second polarization area
223:透光區 223: Translucent area
224:非透光區 224: non-transparent area
24、24A:圖案化金屬層 24, 24A: patterned metal layer
241、241A:第一開口圖案 241, 241A: first opening pattern
242、242A:第二開口圖案 242, 242A: second opening pattern
S30、S32、S34:步驟 S30, S32, S34: steps
40:目標材料 40: Target material
42:光阻層 42: photoresist layer
421、421A:第一光阻層圖案 421, 421A: the pattern of the first photoresist layer
422、422A、422A’:第二光阻層圖案 422, 422A, 422A': second photoresist layer pattern
423:第三光阻層圖案 423: The third photoresist layer pattern
424:第四光阻層圖案 424: The fourth photoresist layer pattern
圖1是本發明一實施例偏極化曝光裝置的示意圖。 FIG. 1 is a schematic diagram of a polarization exposure device according to an embodiment of the present invention.
圖2是本發明一第一實施例偏振光罩的剖面示意圖。 FIG. 2 is a schematic cross-sectional view of a polarizing mask according to a first embodiment of the present invention.
圖3a及圖3b分別是本發明一第一實施例圖案化金屬層及偏極化層的圖案概要示意圖。 FIG. 3 a and FIG. 3 b are schematic schematic diagrams of patterned metal layers and polarized layers, respectively, according to a first embodiment of the present invention.
圖4是本發明一實施例光罩圖案移轉方法的流程示意圖。 FIG. 4 is a schematic flowchart of a photomask pattern transfer method according to an embodiment of the present invention.
圖5a及圖5b分別是本發明一第一實施例光阻層於第一次曝光及第二次曝光所界定的光阻層圖案示意圖,圖5c則為圖5a及5b所示之光阻層圖案的組合示意圖。 Figure 5a and Figure 5b are schematic diagrams of the photoresist layer pattern defined by the photoresist layer in the first exposure and the second exposure of the first embodiment of the present invention, respectively, and Figure 5c is the photoresist layer shown in Figures 5a and 5b Schematic diagram of the combination of patterns.
圖6是本發明一第二實施例偏振光罩的剖面示意圖。 FIG. 6 is a schematic cross-sectional view of a polarizing mask according to a second embodiment of the present invention.
圖7a及圖7b分別是本發明一第二實施例圖案化金屬層及偏極化層的圖案概要示意圖。 FIG. 7a and FIG. 7b are schematic schematic diagrams of patterned metal layer and polarized layer, respectively, according to a second embodiment of the present invention.
圖8a及圖8b分別是本發明一第二實施例光阻層於第一次曝光及第二次曝光所界定的光阻層圖案示意圖,圖8c則為圖8a及8b所示之光阻層圖案的組合示意圖。 Figure 8a and Figure 8b are schematic diagrams of the photoresist layer pattern defined by the photoresist layer in the first exposure and the second exposure of a second embodiment of the present invention, respectively, and Figure 8c is the photoresist layer shown in Figures 8a and 8b Schematic diagram of the combination of patterns.
圖1是本發明一實施例偏極化曝光裝置的示意圖,如圖所示,偏極化曝光裝置10包含光源12、第一偏振板14及第二偏振板16、以及偏振
光罩18。光源12提供曝光光束L;第一偏振板14及第二偏振板16設置於曝光光束L的光學路徑上,第一偏振板14與第二偏振板16可吸收一預定的偏振光分量,並透射其它的偏振光分量,而使入射的曝光光束L沿一指定方向被透射,於一實施例中,第一偏振板14與第二偏振板16皆為線性偏振器,而其偏振軸被設成為互相垂直,其中,曝光光束L經第一偏振板14轉換為第一偏振光L1,曝光光束L經第二偏振板16轉換為第二偏振光L2,第二偏振光L2及第一偏振光L1具有不同的偏振方向,於一實施例中,第一偏振光L1及第二偏振光L2其中之一者可為垂直偏振光,另一者可為水平偏振光。
Fig. 1 is the schematic diagram of polarization exposure device of one embodiment of the present invention, as shown in the figure,
偏振光罩18設置於第一偏振光L1及第二偏振光L2的光學路徑上。圖2是本發明一第一實施例偏振光罩的剖面示意圖,偏振光罩18包含基材20、偏極化層22及圖案化金屬層24,其中基材20具有相對的第一表面201及第二表面202,於一實施例中,第二表面202面向光源(示於圖1),亦即面向第一偏振光L1/第二偏振光L2的入射;偏極化層22設置於基材20的第一表面201,圖案化金屬層24設置於偏極化層22,使偏極化層22介於基材20及圖案化金屬層24之間。於一實施例中,基材20的材質例如為石英,圖案化金屬層24的材質例如為鉻。圖3a及圖3b分別是本發明一第一實施例圖案化金屬層及偏極化層的圖案概要示意圖,如圖3a所示,圖案化金屬層24具有第一開口圖案241及第二開口圖案242,在圖3a中,為方便進行說明,利用虛線的繪示來區隔第一開口圖案241及第二開口圖案242,而圖2中所繪示之偏振光罩18的圖案化金屬層24即為圖3a所示之圖案化金屬層24沿AA線段的剖面示意。如圖3b所示,於第一實施例中,偏極化層22包含第一偏極化區221及第二偏極化區222,其中第一偏極化區221允許第一偏振光L1通過,但不允許第二偏振光L2通過,第二偏極
化區222允許第二偏振光L2通過,但不允許第一偏振光L1通過,如圖3a及圖3b所示,第一偏極化區221對應於第一開口圖案241,第二偏極化區222對應於第二開口圖案242。
The
接續上述說明,圖4是本發明一實施例光罩圖案移轉方法的流程示意圖,請同時參閱圖1所示,當要將偏振光罩18的特徵圖案移轉至目標材料40上的光阻層42時,光罩圖案移轉方法包含,將偏振光罩18和覆有光阻層42之目標材料40的適當位置對準,此為步驟S30;接著進行兩次曝光製程,例如在步驟S32中,先後分別使用具有不同偏振方向的第一偏振光L1及第二偏振光L2通過偏振光罩18對光阻層42進行曝光,以依序在光阻層42上形成第一光阻層圖案421(示於後續圖5a中)以及第二光阻層圖案422(示於後續圖5b中);此第一光阻層圖案421及第二光阻層圖案422將於後續未繪示的微影製程中移除,此為步驟S34,以在光阻層42上形成對應於第一開口圖案241及第二開口圖案242的光阻層開口(圖中未示)。
Continuing the above description, FIG. 4 is a schematic flow chart of a photomask pattern transfer method according to an embodiment of the present invention. Please also refer to FIG.
圖5a及圖5b分別是本發明一第一實施例光阻層於第一次曝光及第二次曝光所界定的光阻層圖案示意圖,圖5c則為圖5a及5b所示之光阻層圖案的組合示意圖。與此實施例中,使用第一實施例所述之偏振光罩18(其圖案化金屬層24及偏極化層22的圖案分別如圖3a及圖3b所示),且以第一次曝光製程使用第一偏振光L1,第二次曝光製程使用第二偏振光L2作為說明,惟不限於此,於其他實施例中,亦可在第一次曝光製程使用第二偏振光L2,第二次曝光製程使用第一偏振光L1。在第一次曝光製程中,使用第一偏振光L1射入偏振光罩18,由於偏振光罩18之偏極化層22的第一偏極化區221允許第一偏振光L1通過,而第二偏極化區222不允許第一偏振光L1通過,因此通過偏振光罩18的第一偏振光L1經第一偏極化區221及第一開口圖案241照射至光阻層42,以在光阻層42形成第一光阻
層圖案421,如圖5a所示,第一光阻層圖案421對應於圖案化金屬層24的第一開口圖案241。在第二次曝光製程中,使用第二偏振光L2射入偏振光罩18,由於偏振光罩18之偏極化層22的第一偏極化區221不允許第二偏振光L2通過,而第二偏極化區222允許第二偏振光L2通過,因此通過偏振光罩18的第二偏振光L2經第二偏極化區222及第二開口圖案242照射至光阻層42,以在光阻層42形成第二光阻層圖案422,如圖5b所示,第二光阻層圖案422對應於圖案化金屬層24之第二開口圖案242。而如圖5c所示,光阻層42經兩次曝光製程後所形成的第一光阻層圖案421及第二光阻層圖案422組合對應於偏振光罩18之圖案化金屬層24的第一開口圖案241及第二開口圖案242的組合。
Figure 5a and Figure 5b are schematic diagrams of the photoresist layer pattern defined by the photoresist layer in the first exposure and the second exposure of the first embodiment of the present invention, respectively, and Figure 5c is the photoresist layer shown in Figures 5a and 5b Schematic diagram of the combination of patterns. In this embodiment, the
圖6是本發明一第二實施例偏振光罩的剖面示意圖,圖7a及圖7b分別是本發明一第二實施例圖案化金屬層及偏極化層的圖案概要示意圖,其中,圖6所繪示之偏振光罩18A的圖案化金屬層24A即為圖7a所示之圖案化金屬層24A沿BB線段的剖面示意。如圖6所示,偏振光罩18A包含基材20、偏極化層22A及圖案化金屬層24A,偏極化層22A設置於基材20的第一表面201,圖案化金屬層24A設置於偏極化層22A,使偏極化層22A介於基材20及圖案化金屬層24A之間,於一實施例中,偏極化層22A及圖案化金屬層24A未覆蓋基材20的整個第一表面201,而在偏振光罩18A形成一開放區181。又如圖7a所示,圖案化金屬層24A具有第一開口圖案241A及第二開口圖案242A;如圖7b所示,於第二實施例中,偏極化層22A包含第一偏極化區221A、透光區223及非透光區224,其中,第一偏極化區221A允許第一偏振光L1通過,但不允許第二偏振光L2通過,於一實施例中,第一偏極化區221A對應於圖案化金屬層24A的第一開口圖案241A;透光區223例如可供第一偏振光L1及第二偏振光L2通過,且透光
區223的配置對應於圖案化金屬層24A的第二開口圖案242A;非透光區224設置於第一偏極化區221A及透光區223之間,非透光區224不允許第一偏振光L1及第二偏振光L2通過。
Fig. 6 is a schematic cross-sectional view of a polarizing mask according to a second embodiment of the present invention, and Fig. 7a and Fig. 7b are schematic diagrams of patterns of a patterned metal layer and a polarizing layer respectively according to a second embodiment of the present invention, wherein Fig. 6 shows The illustrated patterned
接續上述說明,圖8a及圖8b分別是本發明一第二實施例光阻層於第一次曝光及第二次曝光所界定的光阻層圖案示意圖,圖8c則為圖8a及8b所示之光阻層圖案的組合示意圖。與此實施例中,使用第二實施例所述之偏振光罩18A(其圖案化金屬層24A及偏極化層22A的圖案分別如圖7a及圖7b所示),且以第一次曝光製程使用第二偏振光L2,第二次曝光製程使用第一偏振光L1作為說明,惟不限於此,於其他實施例中,亦可在第一次曝光製程使用第一偏振光L1,第二次曝光製程使用第二偏振光L2。
Continuing the above description, Fig. 8a and Fig. 8b are schematic diagrams of the photoresist layer pattern defined by the photoresist layer in the first exposure and the second exposure of a second embodiment of the present invention respectively, and Fig. 8c is shown in Fig. 8a and 8b The combined schematic diagram of the photoresist layer pattern. In this embodiment, the
接續上述說明,在第一次曝光製程中,使用第二偏振光L2射入偏振光罩18A,由於偏振光罩18A之偏極化層22A僅透光區223允許第二偏振光L2通過,因此通過偏振光罩18A的第二偏振光L2經透光區223及第二開口圖案242A照射至光阻層42,以在光阻層42形成第二光阻層圖案422A,如圖8a所示,第二光阻層圖案422A對應於圖案化金屬層24A之第二開口圖案242A;於一實施例中,第二偏振光L2通過偏振光罩18A的開放區181時,亦會在光阻層42形成圖案,例如為第四光阻層圖案424。
Continuing the above description, in the first exposure process, the second polarized light L2 is used to enter the
在第二次曝光製程中,使用第一偏振光L1入射偏振光罩18A,由於第一偏極化區221A及透光區223皆允許第一偏振光L1通過,因此通過偏振光罩18A的第一偏振光L1經第一偏極化區221A及其下方的第一開口圖案241A與透光區223及其下方的第二開口圖案242A照射至光阻層42,以在光阻層42形成第一光阻層圖案421A及第三光阻層圖案423,如圖8b所示,第一光阻層圖案421A對應於圖案化金屬層24A的第一開口圖案241A,第三光阻層圖案423對應於圖案化金屬層24A之第二開口圖案
242A,於一實施例中,第三光阻層圖案423對應於第二光阻層圖案422A,亦即第二光阻層圖案422A及第三光阻層圖案423位在光阻層42的同一位置,由於此對應於第二開口圖案242A之光阻層42的同一位置歷經兩次曝光,如圖8c所示,因此雙重曝光的製程要素影響下,由第二光阻層圖案422A及第三光阻層圖案423疊加後的第二光阻層圖案422A’尺寸將會略大於第二開口圖案242A的尺寸。又在第二次曝光製程時,第一偏振光L1亦會通過偏振光罩18A的開放區181,再次於光阻層42形成第四光阻層圖案424
In the second exposure process, the first polarized light L1 is used to enter the
在本發明中,使用同一偏振光罩經兩次不同偏振光的曝光製程,以在光阻層上至少形成第一光阻層圖案及第二光阻層圖案。由於僅使用單一偏振光罩,因此將減少使用多個光罩時所容易導致之光罩與光阻層之間的對準誤差,此外,使用單一偏振光罩進行兩次曝光而在光阻層上產生的疊加圖案經後續顯影製程所形成的光阻層開口圖案,與偏振光罩的特徵圖案之間將具有較佳的圖案移轉準確度。另一方面,由於本發明實施例不需使用多個具不同圖案的光罩,因此具有降低製程複雜度及減少製程成本的優點。 In the present invention, at least a first photoresist layer pattern and a second photoresist layer pattern are formed on the photoresist layer through two exposure processes with different polarized light using the same polarizing mask. Since only a single polarizing mask is used, the alignment error between the mask and the photoresist layer that is easily caused when using multiple masks will be reduced. The pattern transfer accuracy between the opening pattern of the photoresist layer formed by the subsequent developing process and the characteristic pattern of the polarizing mask will be better. On the other hand, since the embodiment of the present invention does not need to use multiple photomasks with different patterns, it has the advantages of reducing the complexity and cost of the manufacturing process.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field of the present invention can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application.
10:偏極化曝光裝置10: Polarization exposure device
12:光源12: Light source
L:曝光光束L: exposure beam
14:第一偏振板14: The first polarizing plate
16:第二偏振板16: Second polarizing plate
L1:第一偏振光L1: first polarized light
L2:第二偏振光L2: second polarized light
18:偏振光罩18: Polarization mask
40:目標材料40: Target material
42:光阻層42: photoresist layer
Claims (10)
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JPH09120154A (en) * | 1995-10-25 | 1997-05-06 | Hitachi Ltd | Polarizing mask and its production as well as pattern exposure method and pattern projection aligner using the same |
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US20060216615A1 (en) * | 2005-03-28 | 2006-09-28 | Michael Goldstein | Wavefront engineering with off-focus mask features |
TW200951615A (en) * | 2008-02-28 | 2009-12-16 | Canon Kk | Exposure apparatus and method of manufacturing device |
US20140038089A1 (en) * | 2012-08-02 | 2014-02-06 | Globalfoundries Inc. | Self-polarized mask and self-polarized mask application |
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JPH09120154A (en) * | 1995-10-25 | 1997-05-06 | Hitachi Ltd | Polarizing mask and its production as well as pattern exposure method and pattern projection aligner using the same |
TW424263B (en) * | 1999-11-26 | 2001-03-01 | United Microelectronics Corp | The polarizing mask for printing the narrow-pitch holes |
US20060216615A1 (en) * | 2005-03-28 | 2006-09-28 | Michael Goldstein | Wavefront engineering with off-focus mask features |
TW200951615A (en) * | 2008-02-28 | 2009-12-16 | Canon Kk | Exposure apparatus and method of manufacturing device |
US20140038089A1 (en) * | 2012-08-02 | 2014-02-06 | Globalfoundries Inc. | Self-polarized mask and self-polarized mask application |
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