TWI797008B - Lining device and emiconductor processing equipment - Google Patents

Abstract

A lining device and a semiconductor processing equipment. The lining device comprises a lining component and an exhaust channel structure, and the air inlet of the exhaust channel structure is communicated with the interior of the process chamber; The air outlet of the exhaust channel structure is connected with the exhaust port of the process chamber; The lining assembly comprises a first metal lining ring and an insulating lining ring nested successively from the center to the edge along the radial direction of the process chamber; The air inlet of the exhaust channel structure is located on the inner peripheral wall of the first metal lining ring; The axial length of the first metal lining ring is set to cover the area where the inner peripheral wall of the insulating lining ring is above the specified height position, so as to prevent the film from depositing on the inner peripheral wall of the insulating lining ring.

Description

Lining equipment and semiconductor processing equipment

The invention relates to the field of semiconductor manufacturing, in particular to a lining device and semiconductor processing equipment.

The traditional process generally uses Physical Vapor Deposition (Physical Vapor Deposition, PVD) method to deposit conductive films. For example, the TiN film prepared by this PVD method has good metal state properties and strong barrier ability, but as the line width As the size keeps shrinking, the conductive film deposited by PVD method cannot meet the step coverage requirements of holes/grooves with high aspect ratio (greater than 5:1), while the chemical vapor deposition (Chemical Vapor Deposition, CVD) method has good step coverage rate and process integration capabilities, and thus gradually began to replace the PVD method to deposit conductive films.

When using CVD to deposit conductive films (especially TiN films), the process results such as resistivity and sheet resistance uniformity of the conductive film are mainly affected by the stability of the radio frequency field, and small changes in the chamber environment may cause radio frequency field The change. As a conductor, the conductive film is mainly deposited on the surface of the wafer, but a small part will still be deposited on the ceramic lining inside the chamber. With the increase in the number of pieces of processing, more and more conductive films are deposited on the ceramic lining. , so that the area of the lower electrode in the radio frequency field gradually increases, and the radio frequency environment changes, which affects the consistency and stability of the process results.

The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a lining device and semiconductor processing equipment, which can prevent thin films from being deposited in the insulating lining ring under the premise of realizing gas discharge inside the process chamber. On the surrounding wall, the consistency and stability of the process results can be improved.

In order to realize the object of the present invention, a lining device is provided, which is applied in the process chamber of semiconductor processing equipment. The lining device includes a lining component and an exhaust channel structure arranged in the lining component. The exhaust channel The air inlet of the structure communicates with the interior of the process chamber; the gas outlet of the exhaust channel structure communicates with the exhaust port of the process chamber to discharge the gas inside the process chamber; the liner assembly includes along In the radial direction of the process chamber, the first metal backing ring and the insulating backing ring are sequentially nested from the center to the edge; wherein, the air inlet of the exhaust channel structure is located on the inner peripheral wall of the first metal backing ring; the first metal backing ring The axial length of a metal backing ring is set to be able to cover the area of the inner peripheral wall of the insulating backing ring above a predetermined height position, so as to prevent the film from being deposited on the inner peripheral wall of the insulating backing ring.

Optionally, the outer peripheral wall of the first metal backing ring is provided with a plurality of positioning protrusions distributed along its circumferential direction at intervals, and a plurality of positioning recesses are provided on the upper surface of the insulating backing ring, each of the positioning The protrusions cooperate with each of the positioning recesses one by one to define the relative position of the first metal backing ring and the insulating backing ring.

Optionally, the bottom surface of each positioning recess is a first slope forming an angle with the radial direction of the processing chamber, and the height of the first slope gradually increases from the center to the edge along the radial direction of the processing chamber The lower surface of each positioning protrusion is a second slope, and the second slope is in contact with the first slope on the corresponding positioning recess, so that the first metal backing ring and the insulating backing ring are coaxial.

Optionally, the value range of the included angle is greater than or equal to 20° and less than or equal to 30°.

Optionally, the first inclined surface, the second inclined surface, and the opposite sides of the positioning concave portion and the positioning convex portion are all polished surfaces to reduce the friction coefficient of the positioning concave portion and the positioning convex portion .

Optionally, an annular groove is also provided on the inner peripheral wall of the insulating back ring, the first metal back ring is located in the annular groove, and the inner peripheral wall of the first metal back ring is in contact with the inner wall of the insulating back ring. The surrounding walls are flush; the upper surface of the first metal backing ring is flush with the upper surface of the insulating backing ring.

Optionally, the lining assembly also includes a second metal backing ring, and the second metal backing ring is nested around the insulating backing ring; the exhaust channel structure includes a plurality of first exhaust holes, a plurality of second Exhaust holes and exhaust passages, wherein each of the first exhaust holes is arranged through the first metal back ring along the radial direction of the first metal back ring, and a plurality of the first vent holes are arranged along the radial direction of the first metal back ring. The circumferential interval distribution of the first metal backing ring; one end of the first exhaust hole on the inner peripheral wall of the first metal backing ring is used as the air inlet of the exhaust passage structure; each of the second exhaust Holes are provided through the insulating back ring in the radial direction of the insulating back ring, and a plurality of the second exhaust holes are provided in one-to-one correspondence with a plurality of the first exhaust holes; the exhaust channel is arranged in the first exhaust hole In the two metal backing rings, and the inlet end of the exhaust channel communicates with each of the second exhaust holes, and the outlet end of the exhaust channel is used as the air outlet of the exhaust channel structure to communicate with the exhaust port .

Optionally, the specified height position is located at a specified vertical distance below the lowest height position of the air inlet of the exhaust channel structure, and the value range of the specified vertical distance is greater than or equal to 25mm and less than or equal to 35mm.

Optionally, the diameter of the first vent hole is larger than the diameter of the second vent hole, so that the first vent hole and the corresponding second vent hole can be maintained when the first metal backing ring is thermally expanded. connected.

Optionally, the difference between the diameter of the first exhaust hole and the diameter of the second exhaust hole is greater than or equal to 0.8 mm and less than or equal to 1 mm.

Optionally, there is a radial gap between the outer peripheral wall of the first metal backing ring and the inner peripheral wall of the insulating backing ring to reserve space for thermal expansion of the first metal backing ring.

As another technical solution, an embodiment of the present invention also provides a semiconductor processing equipment, including a process chamber and a radio frequency power supply, wherein an air inlet device is arranged on the top of the process chamber for delivering process gas into the process chamber ; An upper electrode and a base located below the upper electrode are arranged in the process chamber, wherein the upper electrode is electrically connected to the radio frequency power supply, and the radio frequency power supply is used to load radio frequency power to the upper electrode; the base is grounded ; A lining device surrounding the base is also provided in the process chamber, and the lining device adopts the above-mentioned lining device provided by the embodiment of the present invention.

Optionally, the semiconductor processing equipment further includes a metal edge ring disposed around the base.

Optionally, the semiconductor processing equipment is chemical vapor deposition equipment, and the deposited film is a conductive film.

The present invention has the following beneficial effects:

In the lining device provided by the embodiment of the present invention, the axial length of the first metal backing ring is set to be able to cover the area of the inner peripheral wall of the insulating backing ring above the specified height position, which can prevent the conductive film from being deposited inside the insulating backing ring On the surrounding wall, and after depositing the conductive film by CVD method, it can ensure that the area of the lower electrode of the radio frequency field will not increase compared with that before depositing the film, and realize that the radio frequency environment remains consistent before and after depositing the conductive film, thereby improving the consistency and consistency of the process results. Stability; at the same time, by positioning the air inlet of the exhaust passage structure on the inner peripheral wall of the first metal backing ring, the first metal backing ring can cover the inner peripheral wall of the insulating backing ring while the exhaust passage structure can still It communicates with the inside of the process chamber so that the gas inside the process chamber can be exhausted.

The semiconductor processing equipment provided by the embodiment of the present invention, by adopting the above-mentioned lining device provided by the embodiment of the present invention, can prevent the conductive film from being deposited on the inner peripheral wall of the insulating lining ring under the premise of realizing gas discharge inside the process chamber, Ensure the consistency of the RF field during the process, thereby improving the consistency and stability of the process results.

The following disclosure provides many different embodiments, or examples, of different means for implementing the disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members An embodiment may be formed between the first member and the second member so that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

In addition, for ease of description, spatially relative terms such as "below", "below", "under", "above", "upper" and the like may be used herein to describe the relationship between one element or member and another(s) The relationship between elements or components, as illustrated in the figure. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and thus the spatially relative descriptors used herein should be interpreted similarly.

Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Furthermore, as used herein, the term "about" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "about" means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless expressly specified otherwise, all numerical ranges such as for amounts of materials disclosed herein, durations of time, temperatures, operating conditions, ratios of amounts, and the like, Amounts, values and percentages should be understood as being modified by the term "about" in all instances. Accordingly, unless indicated to the contrary, the numerical parameters set forth in this disclosure and the accompanying claims are approximations that may vary as desired. At a minimum, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges can be expressed herein as from one endpoint to the other or as between two endpoints. All ranges disclosed herein are inclusive of endpoints unless otherwise specified.

Please refer to FIGS. 1 to 3 together. A semiconductor processing equipment includes a process chamber 100 and a radio frequency power supply (not shown in FIG. 1 ), wherein an upper electrode and a base 101 are arranged in the process chamber 100, the The pedestal 101 is used to carry the wafer, and the pedestal 101 is, for example, a heater for heating the wafer; and, the pedestal 101 can be used as a lower electrode, and is grounded through the lifting shaft 104, which can be, for example, passed through The chamber walls of the process chamber 100 are grounded. In addition, a metal edge ring 103 is provided around the base 101, which is electrically connected to the base 101 to protect the base 101 and improve the uniformity of the electric field distribution above the base 101; the processing chamber 100 is provided with The gas inlet device 105 is used to deliver the process gas into the process chamber 100; the upper electrode includes a uniform flow chamber arranged in the process chamber 100 and above the base 101, and arranged at intervals from top to bottom. The plate 107 and the shower head 108, the uniform flow plate 107 and the shower head 108 are used to evenly flow the process gas flowing out from the air inlet device 105, so that it can evenly move towards the wafer on the base 101 surface delivery. Moreover, the processing chamber 100 includes a chamber side wall and an upper electrode mounting plate 116 above it, and an insulating fitting 110 is provided between the two to electrically insulate the chamber side wall from the upper electrode mounting plate 116, wherein , the side wall of the chamber is grounded, and the upper electrode mounting plate 116 is provided with a radio frequency feed electrode 106, the flow uniforming plate 107 and the shower head 108 are fixedly connected to the above-mentioned upper electrode mounting plate 116 through a connecting piece 115 (such as a conductive screw), and It can be electrically connected, and under the insulating effect of the insulating adapter 110 , the flow plate 107 and the shower head 108 are electrically insulated from the side wall of the chamber, thereby ensuring that the radio frequency power can effectively act on the chamber. The RF feeding electrode 106 is electrically connected to the above-mentioned RF power supply, and is electrically connected to the upper electrode mounting plate 116 . When the RF power is turned on, the RF feeding electrode 106, the upper electrode mounting plate 116, the shower head 108, and the flow uniforming plate 107 are all charged, and a continuous current is generated between the chamber side wall of the grounded process chamber 100 and the susceptor 101. The stable glow discharge can excite the process gas in the process chamber 100 to form plasma, and the plasma will deposit and form a thin film on the surface of the wafer 102 . In addition, a lining device 109 surrounding the susceptor 101 is disposed in the processing chamber 100 . It should be noted that the dashed box in FIG. 1 only schematically includes a partial structure of the lining device 109 .

It should also be noted that, in practical applications, the structure of the above-mentioned RF feeding electrode assembly is not limited to the structure shown in FIG. 1 , and the embodiment of the present invention has no special limitation thereto.

As shown in FIG. 2 , the lining device 109 includes a first metal backing ring 1091 , an insulating backing ring 1092 and a second metal backing ring 1093 nested sequentially from the center to the edge along the radial direction of the process chamber 100 , wherein, as As shown in Fig. 3, a plurality of exhaust holes 1094 are arranged in the insulating lining 1092, and the plurality of exhaust holes 1094 are distributed at intervals along the circumference of the insulating lining 1092, and the air inlet 1094a of each exhaust hole 1094 is located at the insulating On the inner peripheral wall of the backing ring 1092. And, as shown in FIG. 2 , an annular gas channel 1095 and an exhaust cavity 1096 below it are arranged in the second metal backing ring 1093 , wherein the inlet end of the annular gas channel 1095 is connected to the outlet of each exhaust hole 1094 The gas port is connected; the gas outlet end of the annular gas passage 1095 is connected with the inlet end of the exhaust chamber 1096, and the gas outlet end of the exhaust chamber 1096 is connected with the exhaust port provided on the chamber wall of the process chamber 100, thereby realizing the process The gas in the chamber 100 is exhausted. In addition, as shown in FIG. 1 , the above-mentioned lining device 109 further includes a grounding lining 1097 , which is disposed around the inside of the process chamber 100 and located under the insulating lining 1092 . The ground liner 1097 is grounded through the chamber walls of the process chamber 100 .

However, since the inlet end 1094a of the above-mentioned gas outlet 1094 is located on the inner peripheral wall of the insulating backing ring 1092, when a conductive film (such as a TiN film) is deposited by CVD, the gas is drawn into the gas outlet through the gas inlet 1094a. In 1094, a part of the unreacted conductive film on the wafer will be deposited on the first metal backing ring 1091 with the airflow, and a part of the unreacted conductive film will be deposited on the first metal backing ring 1092 along with the airflow. The area below the metal backing ring 1091 is specifically the area A on the inner peripheral wall of the insulating backing ring 1092 shown in FIG. 2 and FIG. The area of the lower electrode is the area of area A), which leads to changes in the radio frequency environment, which affects the consistency and stability of the process results. FIG. 4 is a graph of the resistivity of the film prepared by the semiconductor processing equipment in FIG. 1 versus the number of wafers. As shown in Figure 4, during the continuous process of 150 wafers, the resistivity of the TiN film tends to increase gradually, which cannot meet the requirements for the consistency and stability of the process results.

In order to solve the above problems, please refer to FIG. 5, an embodiment of the present invention provides a lining device 1, which is applied in a process chamber 100 of semiconductor processing equipment (such as chemical vapor deposition equipment), the process chamber 100 is, for example, the same structure as the process chamber shown in FIG. 1 .

As shown in FIG. 6 , the above-mentioned lining device 1 includes a lining assembly 11 and an exhaust passage structure 12 arranged in the lining assembly 11 , the air inlet of the exhaust passage structure 12 communicates with the interior of the process chamber 100 The gas outlet of the exhaust channel structure 12 communicates with the exhaust port of the process chamber 100 for exhausting the gas inside the process chamber 100 . In this embodiment, the lining assembly 11 includes a first metal backing ring 111 , an insulating backing ring 112 , and a second metal backing ring 113 nested sequentially from the center to the edge along the radial direction of the process chamber 100 ; wherein, the first The metal backing ring 111 and the second metal backing ring 113 are, for example, aluminum backing rings; the insulating backing ring 112 is, for example, a ceramic backing ring to protect the inner peripheral wall of the second metal backing ring 113 from depositing a thin film. The air inlet of the exhaust channel structure 12 is located on the inner peripheral wall of the first metal backing ring 111; the axial length of the first metal backing ring 111 is set to be able to cover the area of the inner peripheral wall of the insulating backing ring 112 above the specified height position , so as to prevent the film from being deposited on the inner peripheral wall of the insulating lining ring 112 .

In the lining device 1 provided by the embodiment of the present invention, the axial length of the first metal backing ring 111 is increased relative to the axial length of the first metal backing ring 1091 in FIG. Covering the area A shown in Fig. 2 and Fig. 3, so as to prevent the conductive film from being deposited on the inner peripheral wall of the insulating lining ring 112, and then after depositing the conductive film (such as TiN film), the lower electrode area of the radio frequency field can be guaranteed to be relatively It will not increase before the deposition of the thin film, so that the radio frequency environment remains consistent before and after the deposition of the conductive thin film, thereby improving the consistency and stability of the process results.

At the same time, by positioning the air inlet of the exhaust channel structure 12 on the inner peripheral wall of the first metal backing ring 111, not only can the first metal backing ring 111 cover the inner peripheral wall of the insulating backing ring 112, but also the exhaust channel structure 12 can still communicate with the inside of the process chamber 100, so that the gas inside the process chamber 100 can be exhausted; In the channel structure 12 , this can further avoid film deposition on the insulating backing ring 112 .

It should be noted that under the electrical insulation effect of the insulating backing ring 112, the potential of the first metal backing ring 111 is in a suspended state. Therefore, even if a thin film is deposited on the first metal backing ring 111, the lower electrode area of the increased radio frequency field Small and will not affect the RF environment.

In addition, as shown in FIG. 5 , the above-mentioned lining device 1 further includes a grounding lining 114 , which is disposed around the inside of the process chamber 100 and located under the insulating lining 112 . The ground liner 114 is grounded through the chamber walls of the process chamber 100 .

The axial length of the first metal backing ring 111 can be freely set according to the actual situation, as long as the first metal backing ring 111 can cover the inner surface of the insulating backing ring under the premise of ensuring that the potential of the first metal backing ring 111 is in a suspended state. It is enough that the peripheral wall is located in the region above the specified height position, so as to prevent the thin film from being deposited on the inner peripheral wall of the insulating backing ring 112 .

The above-mentioned exhaust channel structure 12 may have various structures. For example, as shown in FIG. As shown in FIG. 9D , each first vent hole 121 is provided through the first metal back ring 111 along the radial direction of the first metal back ring 111 , and a plurality of first vent holes 121 are arranged along the first metal back ring 111 . 111 are distributed at intervals in the circumferential direction; one end of the first exhaust hole 121 located on the inner peripheral wall of the first metal backing ring 111 is used as the air inlet of the above-mentioned exhaust channel structure 11, so as to be able to communicate with the inside of the process chamber 100 . As shown in FIG. 8B , each second exhaust hole 122 is provided through the insulating collar 112 along the radial direction of the insulating collar 112 , and as shown in FIG. The exhaust holes 121 are arranged in a one-to-one correspondence.

By distributing a plurality of first exhaust holes 121 at intervals along the circumferential direction of the first metal backing ring 111, the gas in the process chamber 100 can be evenly discharged from each first exhaust hole 121, thereby improving the exhaust uniformity. performance, which can further improve the stability of the radio frequency environment.

As shown in Figure 6, the above-mentioned exhaust channel is arranged in the second metal backing ring 113, and the intake end of the exhaust channel communicates with each second exhaust hole 122, and the gas outlet end of the exhaust channel is used as the above-mentioned The gas outlet of the exhaust channel structure 12 communicates with the exhaust port (not shown in the figure) provided on the chamber wall of the process chamber 100 . There are various structures of the exhaust channel. For example, in this embodiment, the exhaust channel includes an annular gas channel 123 and an exhaust cavity 124 below it, wherein the inlet end of the annular gas channel 123 is connected to each second gas channel. The gas outlet end of the exhaust hole 122 is connected; the gas outlet end of the annular gas channel 123 is connected with the inlet end of the exhaust chamber 124, and the gas outlet end of the gas outlet channel 124 is connected with the above-mentioned exhaust port, thereby realizing the gas in the process chamber 100 Exhaust, the specific exhaust direction is shown by the arrow in Figure 6. Optionally, the above-mentioned exhaust chamber 124 may be an annular channel or any other structure.

It should be noted that, in practical applications, the above-mentioned second metal backing ring 113 can also be omitted. In this case, the above-mentioned exhaust channel can also be provided in the chamber side wall of the process chamber 100, or can also be provided On the other exhaust components located in the process chamber 100 , the embodiment of the present invention has no special limitation on this.

In some embodiments, optionally, the second metal backing ring 113 includes an upper sub-backing ring and a lower sub-backing ring below it, the two are sealed butted, and the inner peripheral wall of the lower sub-backing ring is relatively opposite to the upper sub-backing ring. The inner peripheral wall protrudes to form a stepped structure that can support the insulating back ring 112, thereby improving structural stability. The split structure of the second metal backing ring 113 can facilitate the processing of gas passages. Of course, in practical applications, the second metal backing ring 113 can also adopt a one-piece structure, which is not particularly limited in the embodiment of the present invention.

In some embodiments, since the first metal backing ring 111 will be thermally expanded and deformed in a high-temperature environment, the deformed first metal backing ring 111 will move upward by 0.2mm-0.3mm relative to the first metal backing ring 111 at normal temperature. , at this time, it may happen that the second exhaust hole 122 is staggered from the first exhaust hole 121 and cannot communicate with each other. In order to avoid this situation, the diameter of the first exhaust hole 121 is optionally larger than that of the second The diameter of the vent hole 122 is such that the first vent hole 121 and the corresponding second vent hole 122 can still maintain communication when the first metal backing ring 111 thermally expands, so that no matter at normal temperature or at high temperature, no There will be cases of wrong holes, which can meet the requirements of exhaust rate and exhaust uniformity under different process temperatures. Optionally, the range of the difference between the diameter of the first exhaust hole 121 and the diameter of the second exhaust hole 122 is greater than or equal to 0.8 mm and less than or equal to 1 mm. The numerical range of the difference can meet the requirements for exhaust rate and exhaust uniformity under different process temperatures.

In some embodiments, optionally, there is a radial gap between the outer peripheral wall of the first metal backing ring 111 and the inner peripheral wall of the insulating backing ring 112, to reserve space for the thermal expansion of the first metal backing ring 111, thereby avoiding The insulating backing ring 112 is damaged, that is, as shown in FIG. 8B and FIG. 9D, the maximum inner diameter W1 of the insulating backing ring 112 is greater than the maximum outer diameter W2 of the first metal backing ring 111, and the maximum inner diameter W1 is different from the largest outer diameter W2 The range of the difference therebetween is, for example, greater than or equal to 2 mm and less than or equal to 4 mm.

There are many ways to fix the first metal backing ring 111 and the insulating backing ring 112. For example, in this embodiment, as shown in FIG. 7C, an annular step 1125 is provided on the upper end surface of the insulating backing ring 112; As shown, an annular boss 1113 is provided on the outer peripheral wall of the first metal lining ring 111, and the annular boss 1113 is stacked on the step surface 1126 of the annular step 1125, and the first metal lining can be realized by fasteners. The fixed connection of the ring 111 to the insulating backing ring 112 .

The above-mentioned first metal backing ring 111 and insulating backing ring 112 can be positioned in various ways. As shown in FIG. 7B , there are multiple Positioning recesses 1121, and as shown in FIG. 9B, a plurality of positioning protrusions 1111 are provided on the outer peripheral wall of the first metal backing ring 111 (that is, the lower surface of the above-mentioned annular boss 1113) at intervals along its circumferential direction. Each positioning protrusion 1111 is matched with each positioning recess 1121 in one-to-one correspondence, so as to define the relative position of the first metal backing ring 111 and the insulating backing ring 112 . Under the cooperation of the positioning convex part 1111 and the positioning concave part 1121, the above-mentioned first metal backing ring 111 and the insulating backing ring 112 can be arranged coaxially, and at the same time, the freedom of rotation of the first metal backing ring 111 around its axis can be restricted. Spend.

Further optionally, when installing the first metal backing ring 111, in order to ensure that the first metal backing ring 111 and the insulating backing ring 112 are arranged coaxially, the first metal backing ring 111 and the metal edge ring 103 shown in FIG. 4 are further realized Coaxial to achieve the accuracy of equal radial spacing, and the consistency of installation between chambers to ensure the stability of radio frequency, as shown in Figure 7B, the bottom surface of each positioning recess 1121 is the same as the process chamber 100 A first slope 1122 with an included angle a1 in the radial direction, and the height of the first slope 1122 gradually increases from the center to the edge along the radial direction of the process chamber 100; as shown in FIG. 9B , the lower surface of each positioning protrusion 1111 is the second slope 1112 , the second slope 1112 forms an included angle a2 with the radial direction of the process chamber 100 , and a2=a1, and the second slope 1112 is in contact with the first slope 1122 of the corresponding positioning recess 1121 . When installing the first metal backing ring 111, under the cooperation of the second slope 1112 and the corresponding first slope 1122, the first metal backing ring 111 can be automatically centered with the insulating backing ring 112 to realize the first metal backing ring 111 is coaxial with the insulating collar. Optionally, the above included angle a1=a2, and the value range is less than or equal to 20° and less than or equal to 30°.

When installing the first metal backing ring 111, in order to reduce the coefficient of friction between the positioning convex portion 1111 and the positioning concave portion 1121, the first slope 1122, the second slope 1112, and the sides of the positioning convex portion 1111 and the positioning concave portion 1121 are all polished. Treated surface.

In some embodiments, optionally, as shown in FIG. 7B, an annular groove 1123 is also provided on the inner peripheral wall of the insulating backing ring 112. As shown in FIG. 6, the first metal backing ring 111 is located in the annular groove 1123 , and the inner peripheral wall of the first metal backing ring 111 is flush with the inner peripheral wall of the insulating backing ring 112 ; the upper surface of the first metal backing ring 111 is flush with the upper surface of the insulating backing ring 112 . In this way, not only the uniformity of exhaust gas can be further improved, but also the structural stability can be improved by supporting the first metal back ring 111 by the bottom surface 1124 of the annular groove 1123 .

As shown in Figure 7B, the axial distance between the lowest height position of the second exhaust hole 122 and the upper surface of the insulating backing ring 112 is h1, as shown in Figure 9B, the axial length of the first metal backing ring 111 is h2; the above specified height position is located at a specified vertical distance below the lowest height position of the second exhaust hole 122 (that is, the air inlet of the exhaust channel structure 12), that is, the axial length h2=h1+Δh, can be Optionally, the value range of the specified vertical distance Δh is greater than or equal to 25mm and less than or equal to 35mm. By setting the vertical distance Δh within this vertical range, the first metal backing ring 111 can at least cover the above-mentioned area A shown in FIG. 3 , thereby preventing film deposition on the inner peripheral wall of the insulating backing ring 112 It can also avoid changing the radio frequency environment due to the excessively long axial length of the first metal backing ring 111 .

FIG. 10 is a graph of the resistivity of a film prepared by using the semiconductor processing equipment provided by the embodiment of the present invention and the number of wafers. As shown in Figure 10, the abscissa is the number of wafers; the ordinate is the resistivity of the film; during the continuous process of 1000 wafers, the resistivity of the film is stable in the range of 220-240 (unit: μΩ cm). In order to meet the requirements for the consistency and stability of the process results.

To sum up, in the lining device provided by the embodiment of the present invention, the axial length of the first metal backing ring is set to be able to cover the area of the inner peripheral wall of the insulating backing ring above the specified height position, which can prevent the conductive film from being deposited on the On the inner peripheral wall of the insulating lining ring, and after the conductive film is deposited by CVD method, it can ensure that the area of the lower electrode of the radio frequency field will not increase compared with that before depositing the film, so that the radio frequency environment remains consistent before and after depositing the conductive film, thereby improving the process Consistency and stability of the results; meanwhile, by positioning the air inlet of the exhaust passage structure on the inner peripheral wall of the first metal backing ring, the first metal backing ring can be exhausted while covering the inner peripheral wall of the insulating backing ring. The gas channel structure can still communicate with the inside of the process chamber, so that the gas inside the process chamber can be exhausted.

As another technical solution, an embodiment of the present invention also provides a semiconductor processing equipment, such as the semiconductor processing equipment shown in FIG. 5, specifically, the semiconductor processing equipment includes a process chamber 100 and a radio frequency power Not shown in FIG. 5 ), wherein, an upper electrode and a base 101 are arranged in the process chamber 100, and the base 101 is used to carry a wafer, and the base 101 is, for example, a heater for performing heating; and, the susceptor 101 can be used as the bottom electrode and grounded through the lifting shaft 104 , and the lifting shaft 104 can be grounded through the chamber wall of the process chamber 100 , for example. And, optionally, a metal edge ring 103 is provided around the base 101, which is electrically connected to the base 101, so as to protect the base 101 and improve the uniformity of the electric field distribution above the base 101; The chamber 100 is provided with an air inlet device 105, which is used to deliver process gas into the process chamber 100; the upper electrode is arranged in the process chamber 100, and is located above the base 101, and is spaced from top to bottom The uniform flow plate 107 and the shower head 108 are set, and the uniform flow plate 107 and the shower head 108 are used to evenly flow the process gas flowing out from the air inlet device 105, so that it can evenly flow toward the base The surface of the wafer on the seat 101 is conveyed. Moreover, the processing chamber 100 includes a chamber side wall and an upper electrode mounting plate 116 above it, and an insulating fitting 110 is provided between the two to electrically insulate the chamber side wall from the upper electrode mounting plate 116, wherein , the side wall of the chamber is grounded, and the upper electrode mounting plate 116 is provided with a radio frequency feed electrode 106, the flow uniforming plate 107 and the shower head 108 are fixedly connected to the above-mentioned upper electrode mounting plate 116 through a connecting piece 115 (such as a conductive screw), and It can be electrically connected, and under the insulating effect of the insulating adapter 110 , the flow plate 107 and the shower head 108 are electrically insulated from the side wall of the chamber, thereby ensuring that the radio frequency power can effectively act on the chamber. The RF feeding electrode 106 is electrically connected to the above-mentioned RF power supply, and is electrically connected to the upper electrode mounting plate 116 . When the RF power is turned on, the RF feeding electrode 106, the upper electrode mounting plate 116, the shower head 108, and the flow uniforming plate 107 are all charged, and a continuous current is generated between the chamber side wall of the grounded process chamber 100 and the susceptor 101. The stable glow discharge can excite the process gas in the process chamber 100 to form plasma, and the plasma will deposit and form a thin film on the surface of the wafer 102 . In addition, a lining device 1 surrounding the susceptor 101 is provided in the processing chamber 100 .

The semiconductor processing equipment provided by the embodiment of the present invention is, for example, chemical vapor deposition equipment, and the deposited film is, for example, a conductive film (especially a TiN film).

The semiconductor processing equipment provided by the embodiment of the present invention adopts the above-mentioned lining device 1 provided by the embodiment of the present invention. By adopting the lining device 1 , it is possible to prevent the film from being deposited on the inner peripheral wall of the insulating lining ring under the premise of realizing gas discharge inside the process chamber, thereby improving the consistency and stability of the process results.

The foregoing content summarizes the features of several embodiments, so that those skilled in the art can better understand aspects of the present disclosure. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.

1: Lining device 11: Lining components 12: Exhaust channel structure 100: process chamber 101: base 102: Wafer 103: metal edge ring 104: lifting shaft 105: Air intake device 106: RF feed electrode 107: Uniform flow plate 108: sprinkler head 109: Lining device 110: Insulation adapter 111: the first metal backing ring 112: insulating lining ring 113: the second metal backing ring 114: Ground lining 115: connector 116: Upper electrode mounting plate 121: The first exhaust hole 122: Second exhaust hole 123: Annular gas channel 124: Exhaust cavity 1091: The first metal backing ring 1092: insulating lining ring 1093: Second metal backing ring 1094: exhaust hole 1094a: Intake port 1095: Annular gas channel 1096: exhaust cavity 1097: Ground lining 1111: positioning convex part 1112: second slope 1113: Annular boss 1121: positioning recess 1122: first oblique 1123: Ring groove 1124: Bottom 1125: circular steps 1126: step surface W1: Maximum inner diameter

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying drawings. It should be noted that, in accordance with the standard practice in the industry, various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion. Fig. 1 is a sectional view of a semiconductor processing equipment; Fig. 2 is a partial enlarged view of the lining device in Fig. 1; Fig. 3 is an axial cross-sectional view of the insulating backing ring in Fig. 1; FIG. 4 is a graph of the resistivity and the number of wafers of the film prepared by the semiconductor processing equipment in FIG. 1; 5 is a cross-sectional view of a semiconductor processing device provided by an embodiment of the present invention; Fig. 6 is a partially enlarged view of the lining device in Fig. 5 of the lining device provided by the embodiment of the present invention; Fig. 7A is a top view of the insulating lining ring used in the embodiment of the present invention; Fig. 7B is a partial cross-sectional view along the line B1-B1 in Fig. 7A in the axial direction of the insulating back ring; Fig. 7C is a partial cross-sectional view along the line B2-B2 in Fig. 7A in the axial direction of the insulating back ring; Fig. 8A is another top view of the insulating lining used in the embodiment of the present invention; Fig. 8B is a sectional view along the line B3-B3 in Fig. 8A in the axial direction of the insulating back ring; Fig. 9A is a bottom view of the first metal backing ring used in the embodiment of the present invention; Fig. 9B is a sectional view along the line C1-C1 in Fig. 9A in the axial direction of the first metal backing ring; Fig. 9C is a sectional view along the line C2-C2 in Fig. 9A in the axial direction of the first metal backing ring; Fig. 9D is a cross-sectional view in the axial direction of the first metal backing ring used in the embodiment of the present invention; FIG. 10 is a graph of the resistivity of a film prepared by using the semiconductor processing equipment provided by the embodiment of the present invention and the number of wafers.

1: Lining device

11: Lining components

12:Exhaust channel structure

111: the first metal backing ring

112: insulating lining ring

113: the second metal backing ring

121: The first exhaust hole

122: Second exhaust hole

123: Annular gas channel

124: Exhaust cavity

Claims (14)

A lining device, applied in a process chamber of a semiconductor processing equipment, wherein the lining device includes a lining component and an exhaust channel structure arranged in the lining component, the inlet of the exhaust channel structure The gas port communicates with the interior of the process chamber; the gas outlet of the exhaust channel structure communicates with the exhaust port of the process chamber to discharge the gas inside the process chamber; The lining assembly includes a first metal backing ring and an insulating backing ring nested sequentially from the center to the edge along the radial direction of the process chamber; wherein, the gas inlet of the exhaust channel structure is located on the first metal backing On the inner peripheral wall of the ring; the axial length of the first metal backing ring is set to be able to cover the area of the inner peripheral wall of the insulating backing ring above a specified height position, so as to prevent film deposition on the inner peripheral wall of the insulating backing ring. The lining device according to claim 1, wherein a plurality of positioning protrusions distributed along the circumferential direction of the first metal lining ring are provided on the outer peripheral wall, and the upper surface of the insulating lining ring is provided with A plurality of positioning recesses, each of the positioning protrusions is matched with each of the positioning recesses one by one, so as to define the relative position of the first metal backing ring and the insulating backing ring. The lining device as claimed in claim 2, wherein the bottom surface of each positioning recess is a first slope forming an angle with the radial direction of the processing chamber, and the height of the first slope is along the height of the processing chamber The radial direction gradually increases from the center to the edge; the lower surface of each positioning protrusion is a second slope, and the second slope is in contact with the first slope on the corresponding positioning recess, so that the first metal A backing ring is coaxial with the insulating backing ring. The lining device according to claim 3, wherein the value range of the included angle is greater than or equal to 20° and less than or equal to 30°. The lining device as claimed in claim 3, wherein the first inclined surface, the second inclined surface, and the opposite sides of the positioning concave portion and the positioning convex portion are polished surfaces to reduce the positioning concave portion and the coefficient of friction of the positioning protrusion. The lining device according to any one of claims 1 to 5, wherein an annular groove is further provided on the inner peripheral wall of the insulating lining ring, the first metal lining ring is located in the annular groove, and the second The inner peripheral wall of a metal lining ring is flush with the inner peripheral wall of the insulating lining ring; the upper surface of the first metal lining ring is flush with the upper surface of the insulating lining ring. The lining device as claimed in any one of claims 1 to 5, wherein the lining assembly further includes a second metal backing ring, and the second metal backing ring is nested around the insulating backing ring; The exhaust channel structure includes a plurality of first exhaust holes, a plurality of second exhaust holes and an exhaust channel, wherein each of the first exhaust holes is arranged through the radial direction of the first metal backing ring at the In the first metal back ring, and a plurality of the first vent holes are distributed along the circumferential direction of the first metal back ring; one end of the first vent hole on the inner peripheral wall of the first metal back ring is used as an air inlet to the exhaust passage structure; Each of the second vent holes is provided through the insulating bushing ring in the radial direction of the insulating bushing ring, and the plurality of the second vent holes are provided in a one-to-one correspondence with the plurality of the first vent holes; The exhaust passage is arranged in the second metal backing ring, and the intake end of the exhaust passage communicates with each of the second exhaust holes, and the outlet end of the exhaust passage is used as the outlet of the exhaust passage structure. The air port communicates with the exhaust port. The lining device according to any one of claims 1 to 5, wherein the specified height position is located at a specified vertical distance below the lowest height position of the air intake of the exhaust channel structure, and the specified vertical distance The value range is greater than or equal to 25mm and less than or equal to 35mm. The lining device according to claim 7, wherein the diameter of the first vent hole is larger than the diameter of the second vent hole, so that when the first metal backing ring thermally expands, the first vent hole and the corresponding The second vent hole remains connected. The lining device according to claim 9, wherein the difference between the diameter of the first vent hole and the diameter of the second vent hole is greater than or equal to 0.8mm and less than or equal to 1mm. The lining device as claimed in any one of claims 1 to 5, wherein there is a radial gap between the outer peripheral wall of the first metal backing ring and the inner peripheral wall of the insulating backing ring for the first metal backing ring room for thermal expansion. A semiconductor processing equipment, comprising a process chamber and a radio frequency power supply, wherein an air inlet device is arranged on the top of the process chamber for delivering a process gas into the process chamber; the process chamber is provided with An upper electrode and a base located below the upper electrode, wherein the upper electrode is electrically connected to the radio frequency power supply, and the radio frequency power supply is used to apply radio frequency power to the upper electrode; the base is grounded; As for the lining device surrounding the base, the lining device adopts the lining device described in any one of item 11 in claim 1. The semiconductor processing equipment of claim 12, wherein the semiconductor processing equipment further comprises a metal edge ring disposed around the base. The semiconductor processing equipment as claimed in claim 12, wherein the semiconductor processing equipment is a chemical vapor deposition equipment, and the deposited film is a conductive film.

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