TWI796052B - A dc-dc converter, an electronic device, and a soft-start method for the dc-dc converter - Google Patents

A dc-dc converter, an electronic device, and a soft-start method for the dc-dc converter Download PDF

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TWI796052B
TWI796052B TW110147064A TW110147064A TWI796052B TW I796052 B TWI796052 B TW I796052B TW 110147064 A TW110147064 A TW 110147064A TW 110147064 A TW110147064 A TW 110147064A TW I796052 B TWI796052 B TW I796052B
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voltage
pulse width
width modulation
modulation signal
control signal
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TW202230944A (en
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杜士才
宋志軍
楊潺
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大陸商上海艾為電子技術股份有限公司
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
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Abstract

A DC-DC converter, an electronic device, and a soft-start method for the DC-DC converter are provided, where a sampled voltage is used to adjust a duty cycle of a pulse width modulation signal, thereby adjusting an on-period of a PMOS power transistor and an on-period of a NMOS power transistor, so that an inductor current is switched between decreasing and increasing. In addition, by setting an appropriate preset voltage and preset duration, the inductor current is increased from a low initial point, and a duration in which the inductor current increase within a period is limited to prevent a large inductor current to an external load which causes damage to the external load.

Description

DCDC轉換器、電子設備及DCDC轉換器的軟啟動方法DCDC converter, electronic equipment and soft start method for DCDC converter

本申請涉及電流轉換器技術領域,具體涉及一種DCDC轉換器、電子設備及DCDC轉換器的軟啟動方法。 The present application relates to the technical field of current converters, in particular to a DCDC converter, electronic equipment and a soft start method for the DCDC converter.

DCDC指的是直流開關電源(又稱DC-DC),可以用於升壓和降壓,利用電容、電感的儲能的特性,通過可控開關如MOSFET等進行高頻開關的動作,將輸入的電能儲存在電容或電感裡,當開關斷開時,電能再釋放給負載,提供能量。DCDC輸出的功率或電壓的能力與占空比有關,占空比由開關導通時間與整個開關的週期的比值有關。 DCDC refers to DC switching power supply (also known as DC-DC), which can be used for step-up and step-down. Using the energy storage characteristics of capacitors and inductors, high-frequency switching actions are performed through controllable switches such as MOSFETs, and the input The electrical energy is stored in the capacitor or inductor, and when the switch is turned off, the electrical energy is released to the load to provide energy. The power or voltage capability of the DCDC output is related to the duty cycle, and the duty cycle is related to the ratio of the switch conduction time to the entire switch cycle.

在DCDC轉換器的初期啟動(startup)階段,可能會產生瞬態衝擊電流(inrush current),對DCDC轉換器自身及負載造成損傷,嚴重時導致損毀,因此,需要設置軟啟動流程,以限制啟動時的電流強度,使輸出電壓緩慢平滑的上升至設定值,避免電壓、電流的過衝。 In the initial startup stage of the DCDC converter, a transient inrush current may be generated, causing damage to the DCDC converter itself and the load, and even damage in severe cases. Therefore, it is necessary to set a soft-start process to limit the startup When the current intensity is constant, the output voltage rises slowly and smoothly to the set value, avoiding voltage and current overshoot.

鑒於此,本申請提供一種DCDC轉換器、電子設備及DCDC轉換器的軟啟動方法,以解決DCDC轉換器初始啟動階段電流過衝的問題。 In view of this, the present application provides a DCDC converter, electronic equipment and a soft start method for the DCDC converter, so as to solve the problem of current overshoot in the initial start-up stage of the DCDC converter.

本申請提供的一種DCDC轉換器,包括: 振盪模組,用於根據採樣電壓輸出脈寬調製信號;輸出模組,包括PMOS功率管、NMOS功率管以及LC濾波電路,其中:所述PMOS功率管的源極用於接收輸入電壓,柵極連接至所述振盪模組的輸出端;所述NMOS功率管的源極接地,柵極連接至所述振盪模組的輸出端,漏極連接至所述PMOS功率管的漏極;所述LC濾波電路第一端連接至所述PMOS功率管的漏極,所述第一端連接至所述振盪模組,以向所述振盪模組提供所述採樣電壓,所述LC濾波電路第二端用於輸出所述輸出電壓;所述振盪模組用於根據所述採樣電壓的變化調整所述脈寬調製信號的占空比,以控制所述PMOS功率管和NMOS功率管依次導通的時間,包括:在所述NMOS功率管導通時,當所述採樣電壓大於預設電壓後,控制所述PMOS功率管導通,以及將所述PMOS功率管的導通時長限制在預設時長以下。 A DCDC converter provided by this application includes: The oscillation module is used to output a pulse width modulation signal according to the sampling voltage; the output module includes a PMOS power transistor, an NMOS power transistor and an LC filter circuit, wherein: the source of the PMOS power transistor is used to receive the input voltage, and the gate connected to the output terminal of the oscillation module; the source of the NMOS power transistor is grounded, the gate is connected to the output terminal of the oscillation module, and the drain is connected to the drain of the PMOS power transistor; the LC The first end of the filter circuit is connected to the drain of the PMOS power transistor, the first end is connected to the oscillation module to provide the sampling voltage to the oscillation module, and the second end of the LC filter circuit for outputting the output voltage; the oscillating module is used for adjusting the duty cycle of the pulse width modulation signal according to the change of the sampling voltage, so as to control the sequential turn-on time of the PMOS power transistor and the NMOS power transistor, The method includes: when the NMOS power transistor is turned on, when the sampling voltage is greater than a preset voltage, controlling the PMOS power transistor to be turned on, and limiting the turn-on duration of the PMOS power transistor to be below a preset duration.

可選的,所述振盪模組根據所述採樣電壓的大小控制所述脈寬調製信號的占空比時,比較所述採樣電壓與預設電壓,在所述NMOS功率管導通時,若所述採樣電壓大於預設電壓,則通過所述脈寬調製信號控制所述PMOS功率管導通,並控制所述PMOS功率管的導通時長小於等於預設時長。 Optionally, when the oscillation module controls the duty ratio of the pulse width modulation signal according to the magnitude of the sampling voltage, compare the sampling voltage with a preset voltage, and when the NMOS power transistor is turned on, if the If the sampling voltage is greater than the preset voltage, the PMOS power transistor is controlled to be turned on through the pulse width modulation signal, and the conduction time of the PMOS power transistor is controlled to be less than or equal to the preset time length.

可選的,所述振盪模組包括:導通控制單元,連接至所述LC濾波電路的第一端,並接 收所述脈寬調製信號,所述導通控制單元用於比較所述採樣電壓和所述預設電壓,並根據比較結果和所述脈寬調製信號輸出第一控制信號;關斷控制單元,連接至所述導通控制單元,用於根據所述第一控制信號輸出第二控制信號;脈寬調製信號單元,連接至所述導通控制單元以及關斷控制單元用於根據所述第一控制信號和第二控制信號形成所述脈寬調製信號;驅動單元,連接至所述脈寬調製信號單元,用於根據所述脈寬調製信號輸出驅動信號驅動所述PMOS功率管和NMOS功率管。 Optionally, the oscillation module includes: a conduction control unit connected to the first end of the LC filter circuit and connected to receiving the pulse width modulation signal, the conduction control unit is used to compare the sampling voltage and the preset voltage, and output a first control signal according to the comparison result and the pulse width modulation signal; the shutdown control unit is connected to to the conduction control unit, configured to output a second control signal according to the first control signal; a pulse width modulation signal unit, connected to the conduction control unit and the shutdown control unit, for outputting a second control signal according to the first control signal and The second control signal forms the pulse width modulation signal; a driving unit, connected to the pulse width modulation signal unit, is used to output a driving signal according to the pulse width modulation signal to drive the PMOS power transistor and the NMOS power transistor.

可選的,所述導通控制單元包括:比較單元,具有兩個輸入端,其中一個輸入端連接至所述採樣電壓的輸出端,另一個輸入端用於接收所述預設電壓,並輸出所述比較結果;電流鏡負載,用於為所述比較單元提供偏置電流;反或閘電路,包括第一反或閘以及反相器,所述第一反或閘具有兩個輸入端,其中一個輸入端連接至所述比較單元的輸出端,另一個輸入端通過所述反相器連接至所述脈寬調製信號單元的輸出端,所述第一反或閘的輸出端輸出所述第一控制信號。 Optionally, the conduction control unit includes: a comparison unit having two input terminals, one of which is connected to the output terminal of the sampling voltage, and the other input terminal is used to receive the preset voltage and output the The above comparison result; a current mirror load, used to provide a bias current for the comparison unit; an NOR gate circuit, including a first NOR gate and an inverter, the first NOR gate has two input terminals, wherein One input terminal is connected to the output terminal of the comparison unit, the other input terminal is connected to the output terminal of the pulse width modulation signal unit through the inverter, and the output terminal of the first inverting-or gate outputs the first a control signal.

可選的,所述比較單元包括:柵極相互連接的第一NMOS管和第二NMOS管,所述第一NMOS管的柵極和漏極相連接,所述第一NMOS管的源極連接至所 述LC濾波電路的第一端,所述第二NMOS管的源極接收所述預設電壓;所述電流鏡負載包括:第一PMOS管,源極接收所述輸入電壓,漏極連接至所述第一NMOS管的漏極;第二PMOS管,源極接收所述輸入電壓,漏極連接至所述第二NMOS管的漏極;所述第一PMOS管和第二PMOS管的柵極還連接至一偏置電壓源,由所述偏置電壓源為所述第一PMOS管和第二PMOS管提供偏置電壓。 Optionally, the comparison unit includes: a first NMOS transistor and a second NMOS transistor whose gates are connected to each other, the gate and drain of the first NMOS transistor are connected, and the source of the first NMOS transistor is connected to to the place The first end of the LC filter circuit, the source of the second NMOS transistor receives the preset voltage; the current mirror load includes: a first PMOS transistor, the source receives the input voltage, and the drain is connected to the The drain of the first NMOS transistor; the second PMOS transistor, the source of which receives the input voltage, and the drain is connected to the drain of the second NMOS transistor; the gates of the first PMOS transistor and the second PMOS transistor It is also connected to a bias voltage source, and the bias voltage source provides bias voltages for the first PMOS transistor and the second PMOS transistor.

可選的,所述預設電壓為0V。 Optionally, the preset voltage is 0V.

可選的,所述關斷控制單元包括:鏡像電流源,用於提供充電電流,包括柵極相互連接的第三PMOS管以及第四PMOS管,且所述第三PMOS管以及第四PMOS管的源極接收所述輸入電壓;電阻,所述電阻連接於所述鏡像電流源的輸出端,用於控制所述充電電流的大小;充電電容,通過所述電阻連接至所述第三PMOS管的漏極;開關單元,連接至所述導通控制單元的輸出端,且連接於所述鏡像電流源和所述充電電容,用於根據所述第一控制信號控制所述充電電容接受所述鏡像電流源的充電,或控制所述充電電容放 電。 Optionally, the shutdown control unit includes: a mirror current source for providing charging current, including a third PMOS transistor and a fourth PMOS transistor whose gates are connected to each other, and the third PMOS transistor and the fourth PMOS transistor The source of the source receives the input voltage; the resistor is connected to the output terminal of the mirror current source to control the magnitude of the charging current; the charging capacitor is connected to the third PMOS transistor through the resistor The drain of the switch unit, connected to the output terminal of the conduction control unit, and connected to the mirror current source and the charging capacitor, for controlling the charging capacitor to accept the mirror image according to the first control signal current source for charging, or to control the charging capacitor discharge electricity.

可選的,所述關斷控制單元還包括:緩衝單元,連接至所述充電電容,用於對所述充電電容的端電壓進行整形,且所述緩衝單元具有翻轉閾值,在所述端電壓大於等於所述翻轉閾值時,對所述端電壓進行翻轉輸出。 Optionally, the shutdown control unit further includes: a buffer unit, connected to the charging capacitor, for shaping the terminal voltage of the charging capacitor, and the buffer unit has a flipping threshold, at which the terminal voltage When it is greater than or equal to the inversion threshold, the terminal voltage is inverted and output.

可選的,所述脈寬調製信號單元包括:RS鎖存器,包括第二反或閘和第三反或閘,其中:所述第二反或閘的一輸入端作為R輸入端,連接至所述關斷控制單元的輸出端,另一輸入端連接至第三反或閘的輸出端,所述第二反或閘的輸出端作為Q輸出端;所述第三反或閘的一輸入端作為S輸入端,連接至所述導通控制單元的輸出端,另一輸入端連接至所述第二反或閘的輸出端。 Optionally, the pulse width modulation signal unit includes: an RS latch, including a second NOR gate and a third NOR gate, wherein: an input terminal of the second NOR gate is used as an R input terminal, connected to To the output terminal of the shutdown control unit, the other input terminal is connected to the output terminal of the third NOR gate, and the output terminal of the second NOR gate is used as the Q output terminal; one of the third NOR gate The input end is used as the S input end and is connected to the output end of the conduction control unit, and the other input end is connected to the output end of the second NOR gate.

本申請提供了一種DCDC轉換器的軟啟動方法,所述DCDC轉換器包括輸出模組,所述輸出模組包括NMOS功率管、PMOS功率管以及LC濾波電路,所述LC濾波電路第一端連接至所述NMOS功率管和PMOS功率管的連接點,第二端接地;所述方法包括以下步驟:從所述LC濾波電路第一端獲取採樣電壓;提供脈寬調製信號以驅動所述NMOS功率管和PMOS功率管,並根據所述採樣電壓的變化調整所述脈寬調製信號的占空比,以控制所述PMOS功率管和NMOS功率管的導通時間。 The present application provides a soft start method for a DCDC converter, the DCDC converter includes an output module, the output module includes an NMOS power transistor, a PMOS power transistor, and an LC filter circuit, and the first end of the LC filter circuit is connected to To the connection point of the NMOS power transistor and the PMOS power transistor, the second end is grounded; the method includes the following steps: obtaining a sampling voltage from the first end of the LC filter circuit; providing a pulse width modulation signal to drive the NMOS power tube and PMOS power tube, and adjust the duty cycle of the pulse width modulation signal according to the change of the sampling voltage, so as to control the conduction time of the PMOS power tube and the NMOS power tube.

可選的,根據所述採樣電壓的變化調整所述脈寬調製信號的占空比,以控制所述PMOS功率管和NMOS功率管的導通時間時, 包括以下步驟:比較所述採樣電壓與預設電壓,在所述NMOS功率管導通時,若所述採樣電壓大於預設電壓,則通過所述脈寬調製信號控制所述PMOS功率管導通,並控制所述PMOS功率管的導通時長小於等於預設時長。 Optionally, when adjusting the duty ratio of the pulse width modulation signal according to the change of the sampling voltage to control the conduction time of the PMOS power transistor and the NMOS power transistor, The method includes the following steps: comparing the sampling voltage with a preset voltage, when the NMOS power transistor is turned on, if the sampling voltage is greater than the preset voltage, controlling the PMOS power transistor to turn on through the pulse width modulation signal, and and controlling the conduction duration of the PMOS power transistor to be less than or equal to a preset duration.

可選的,根據所述採樣電壓的變化調整所述脈寬調製信號的占空比時,包括以下步驟:根據所述採樣電壓的大小獲取第一控制信號和第二控制信號;根據所述第一控制信號和第二控制信號形成所述脈寬調製信號。 Optionally, when adjusting the duty ratio of the pulse width modulation signal according to the change of the sampling voltage, the following steps are included: acquiring a first control signal and a second control signal according to the magnitude of the sampling voltage; A control signal and a second control signal form the pulse width modulated signal.

可選的,根據所述採樣電壓的大小獲取第一控制信號時,包括以下步驟:獲取所述脈寬調製信號;在所述採樣電壓大於所述預設電壓時,若所述脈寬調製信號為高電平,則輸出置高的所述第一控制信號,若所述脈寬調製信號為低電平,則輸出置低的所述第一控制信號;和/或,在所述採樣電壓小於所述預設電壓時,所述比較單元輸出高電平,輸出置低的所述第一控制信號。 Optionally, when acquiring the first control signal according to the magnitude of the sampling voltage, the following steps are included: acquiring the pulse width modulation signal; when the sampling voltage is greater than the preset voltage, if the pulse width modulation signal is a high level, then output the first control signal that is set high, and if the pulse width modulation signal is low level, then output the first control signal that is set low; and/or, at the sampling voltage When the voltage is lower than the preset voltage, the comparing unit outputs a high level, and outputs the first control signal which is set low.

可選的,根據所述採樣電壓的變化獲取第二控制信號時,包括以下步驟:提供充電電容,並提供充電電流對所述充電電容充電; 在所述第一控制信號置高時,切斷所述充電電流與所述充電電容的連接,並控制所述充電電容放電;獲取所述充電電容的端電壓,在所述端電壓高於一翻轉閾值時,輸出置高的所述第二控制信號,否則輸出置低的所述第二控制信號。 Optionally, when acquiring the second control signal according to the change of the sampling voltage, the method includes the following steps: providing a charging capacitor, and providing a charging current to charge the charging capacitor; When the first control signal is set high, cut off the connection between the charging current and the charging capacitor, and control the charging capacitor to discharge; obtain the terminal voltage of the charging capacitor, when the terminal voltage is higher than a When the threshold value is reversed, output the second control signal that is set high, otherwise output the second control signal that is set low.

可選的,根據所述採樣電壓的變化獲取第二控制信號時,還包括以下步驟:通過改變充電電容、充電電流以及所述翻轉閾值調整所述第二控制信號的置高時長。 Optionally, when acquiring the second control signal according to the change of the sampling voltage, the following step is further included: adjusting the set-high duration of the second control signal by changing the charging capacitance, charging current and the flipping threshold.

可選的,採用RS鎖存器處理所述第一控制信號和第二控制信號,以獲取所述脈寬調製信號。 Optionally, an RS latch is used to process the first control signal and the second control signal to obtain the pulse width modulation signal.

本申請還提供了一種電子設備,包括所述的DCDC轉換器。 The present application also provides an electronic device, including the DCDC converter.

本申請的DCDC轉換器、電子設備及DCDC轉換器的軟啟動方法使用採樣電壓來調整脈寬調製信號的占空比,從而調節所述PMOS功率管和NMOS功率管的導通時長。由於所述PMOS功率管以及所述NMOS功率管可以增大或減小所述電感電流,因此,通過控制所述脈寬調製信號的占空比,可以使所述電感電流在減小到一定程度後再開始增大,使得所述電感電流能夠從一個較低的初始點開始增大,並且可以限制所述電感電流在一個週期內的增大幅度,防止輸出較大的電感電流至外接負載,造成外接負載的毀損。 The DCDC converter, the electronic equipment and the soft start method of the DCDC converter of the present application use the sampling voltage to adjust the duty ratio of the pulse width modulation signal, thereby adjusting the conduction duration of the PMOS power transistor and the NMOS power transistor. Since the PMOS power transistor and the NMOS power transistor can increase or decrease the inductor current, by controlling the duty cycle of the pulse width modulation signal, the inductor current can be reduced to a certain extent Then start to increase, so that the inductor current can increase from a lower initial point, and can limit the increase of the inductor current in one cycle, preventing the output of a large inductor current to the external load, Cause damage to external loads.

101:振盪模組 101:Oscillation module

102:輸出模組 102: Output module

103:驅動單元 103: Drive unit

104:導通控制單元 104: Turn on the control unit

1041:比較單元 1041: comparison unit

1042:電流鏡負載 1042: current mirror load

105:關斷控制單元 105:Shutdown control unit

106:脈寬調製信號單元 106: Pulse Width Modulation Signal Unit

201:RS鎖存器 201: RS latch

S401:步驟 S401: step

S402:步驟 S402: step

S501:步驟 S501: step

S502:步驟 S502: step

S601:步驟 S601: step

S602:步驟 S602: step

S603:步驟 S603: step

圖1為現有技術中的DCDC轉換器的結構示意圖;圖2為現有技術中的DCDC轉換器中各個信號的時序圖;圖3為一實施例中所述DCDC轉換器的結構示意圖;圖4為一實施例中所述DCDC轉換器的結構示意圖;圖5為一實施例中所述DCDC轉換器的電路結構示意圖;圖6為一實施例中所述DCDC轉換器各個信號的時序示意圖;圖7為一實施例中所述軟啟動方法的步驟流程示意圖;圖8為一實施例中圖7中步驟S402展開後的步驟流程示意圖;圖9為一實施例中圖8的步驟S502展開後的步驟流程示意圖。 Fig. 1 is a schematic structural diagram of a DCDC converter in the prior art; Fig. 2 is a timing diagram of various signals in a DCDC converter in the prior art; Fig. 3 is a schematic structural diagram of a DCDC converter described in an embodiment; Fig. 4 is A schematic diagram of the structure of the DCDC converter in one embodiment; FIG. 5 is a schematic diagram of the circuit structure of the DCDC converter in one embodiment; FIG. 6 is a schematic diagram of the timing of each signal of the DCDC converter in one embodiment; FIG. 7 It is a schematic flow diagram of the steps of the soft start method described in an embodiment; FIG. 8 is a schematic flow diagram of the steps after step S402 in FIG. 7 is expanded in an embodiment; FIG. 9 is a step after the expansion of step S502 in FIG. 8 in an embodiment Schematic diagram of the process.

研究發現,可以使用誤差放大器以及比較單元來構建DCDC轉換器的軟啟動電路,所述DCDC轉換器如圖1所示,包括誤差放大器EA、比較單元COMP、驅動器Driver以及輸出部分,由所述誤差放大器EA對不斷上升的參考電壓VC以及基於DCDC轉換器的輸出電壓的採樣電壓FB進行比較,並輸出一個調節電壓VEA,該不斷上升的參考電壓VC由電容C充電產生,且隨時間線性上升。 Research has found that an error amplifier and a comparison unit can be used to construct a soft-start circuit for a DCDC converter. The DCDC converter is shown in Figure 1, including an error amplifier EA, a comparison unit COMP, a driver, and an output section. The error The amplifier EA compares the rising reference voltage VC with the sampling voltage FB based on the output voltage of the DCDC converter, and outputs an adjusted voltage VEA. The rising reference voltage VC is generated by charging the capacitor C and rises linearly with time.

所述比較單元COMP比較所述調節電壓VEA與一個鋸齒波信號,從而產生方波信號PWM,如圖2所示。由於參考電壓VC隨時間線性上升,因此所述調節電壓VEA對鋸齒波信號SAW斬波後得到的 方波信號PWM的占空比也會線性增大,導致輸出電壓VOUT會隨著參考電壓VC的上升緩慢上升,從而實現軟啟動過程。 The comparison unit COMP compares the adjustment voltage VEA with a sawtooth wave signal to generate a square wave signal PWM, as shown in FIG. 2 . Since the reference voltage VC rises linearly with time, the adjusted voltage VEA is obtained after chopping the sawtooth signal SAW The duty cycle of the square wave signal PWM will also increase linearly, causing the output voltage VOUT to increase slowly with the increase of the reference voltage VC, thereby realizing a soft start process.

然而,在使用所述軟啟動電路時,在重載或輸出濾波電容很大時,輸出電壓VOUT較低,採樣電壓FB幾乎為零,採樣電壓FB與參考電壓VC之間差值將達到最大,所述誤差放大器EA輸出的調節電壓VEA達到最大,所述DCDC轉換器將工作在最大占空比情況下,此時PMOS功率管的導通時間Ton很大。由於所述輸出模組中電感L的電流峰值與PMOS功率管的導通時間Ton相關,此時電感的電流峰值也很高,易發生電感飽和,嚴重導致DCDC轉換器損毀。 However, when using the soft-start circuit, when the load is heavy or the output filter capacitor is large, the output voltage VOUT is low, the sampling voltage FB is almost zero, and the difference between the sampling voltage FB and the reference voltage VC will reach the maximum. The regulated voltage VEA output by the error amplifier EA reaches the maximum, and the DCDC converter will work at the maximum duty ratio, and the conduction time Ton of the PMOS power transistor is very large at this time. Since the current peak value of the inductor L in the output module is related to the conduction time Ton of the PMOS power transistor, the current peak value of the inductor is also very high at this time, and the inductor saturation is prone to occur, seriously causing damage to the DCDC converter.

為了克服上述問題,本申請提出了一種DCDC轉換器、電子設備以及DCDC轉換器的軟啟動方法。以下結合附圖,對本申請中的DCDC轉換器以及DCDC轉換器軟啟動進行進一步的說明。 In order to overcome the above problems, the present application proposes a DCDC converter, electronic equipment and a soft start method for the DCDC converter. The DCDC converter and the soft start of the DCDC converter in this application will be further described below with reference to the accompanying drawings.

本申請的一實施例中提供了一種DCDC轉換器。 An embodiment of the present application provides a DCDC converter.

請參閱圖3,為一實施例中所述DCDC轉換器的結構示意圖。 Please refer to FIG. 3 , which is a schematic structural diagram of the DCDC converter in an embodiment.

本申請提供的一種DCDC轉換器,包括振盪模組101、輸出模組102。 A DCDC converter provided in this application includes an oscillation module 101 and an output module 102 .

所述振盪模組101用於輸出脈寬調製信號,並根據採樣電壓SW的大小控制脈寬調製信號PWM的占空比,即所述的脈寬調製信號PWM的高低電平翻轉時機。所述採樣電壓SW採樣自所述輸出模組102,在所述脈寬調製信號PWM為高電平時,若所述採樣電壓SW大於預設電壓,則所述脈寬調製信號PWM翻轉為低電平,且所述低電平的 持續時長小於等於預設時長。 The oscillating module 101 is used to output a pulse width modulation signal, and control the duty cycle of the pulse width modulation signal PWM according to the magnitude of the sampling voltage SW, that is, the high-low level inversion timing of the pulse width modulation signal PWM. The sampling voltage SW is sampled from the output module 102, and when the pulse width modulation signal PWM is at a high level, if the sampling voltage SW is greater than a preset voltage, the pulse width modulation signal PWM is reversed to a low level. level, and the low level of the The duration is less than or equal to the preset duration.

所述輸出模組102包括PMOS功率管、NMOS功率管以及LC濾波電路,其中:所述PMOS功率管的源極用於接收輸入電壓Vin,柵極連接至所述振盪模組101的輸出端;所述NMOS功率管的源極接地,柵極連接至所述振盪模組101的輸出端,漏極連接至所述PMOS功率管的漏極。 The output module 102 includes a PMOS power transistor, an NMOS power transistor and an LC filter circuit, wherein: the source of the PMOS power transistor is used to receive the input voltage Vin, and the gate is connected to the output terminal of the oscillation module 101; The source of the NMOS power transistor is grounded, the gate is connected to the output terminal of the oscillation module 101 , and the drain is connected to the drain of the PMOS power transistor.

所述LC濾波電路包括相互連接的電感L和電容C,所述電感L的第一端作為所述LC濾波電路的第一端連接至所述PMOS功率管的漏極,還連接至所述振盪模組101,以向所述振盪模組101提供所述採樣電壓SW。所述電感L的第二端作為所述LC濾波電路的第二端,以輸出一輸出電壓VOUT,且所述電感L的第二端連接至所述電容C的上極板,所述電容C的下極板接地。 The LC filter circuit includes an inductor L and a capacitor C connected to each other, the first end of the inductor L is connected to the drain of the PMOS power transistor as the first end of the LC filter circuit, and is also connected to the oscillator module 101, to provide the sampling voltage SW to the oscillation module 101. The second end of the inductor L is used as the second end of the LC filter circuit to output an output voltage VOUT, and the second end of the inductor L is connected to the upper plate of the capacitor C, and the capacitor C The lower plate is grounded.

所述PMOS功率管和NMOS功率管根據所述脈寬調製信號PWM的高低電平的變化交替導通,使得所述LC濾波電路在兩個狀態間切換,一個狀態是PMOS功率管導通、NMOS功率管關斷時,所述LC濾波電路通過所述PMOS功率管連接至輸入電壓Vin,由所述輸入電壓Vin給所述LC濾波電路中的電容充電的充電狀態,在該狀態下,電感L的電感電流不斷增大,且所述PMOS管的導通時間Ton越大,所述電感電流的峰值越大;另一個狀態是NMOS功率管導通、PMOS功率管關斷時,所述LC濾波電路對所述NMOS管放電的放電狀態,在該狀態下,電感L的電感電流不斷減小,且所述NMOS管的導通時間Toff越大,所述電感電流的最小值越小。 The PMOS power transistor and the NMOS power transistor are alternately turned on according to the change of the high and low levels of the pulse width modulation signal PWM, so that the LC filter circuit is switched between two states, one state is that the PMOS power transistor is turned on, and the NMOS power transistor is turned on. When it is turned off, the LC filter circuit is connected to the input voltage Vin through the PMOS power transistor, and the input voltage Vin charges the capacitor in the LC filter circuit. In this state, the inductance of the inductor L The current is constantly increasing, and the greater the on-time Ton of the PMOS transistor is, the greater the peak value of the inductor current is; in another state, when the NMOS power transistor is turned on and the PMOS power transistor is turned off, the LC filter circuit has a greater effect on the The discharge state of the NMOS tube discharge, in this state, the inductance current of the inductor L decreases continuously, and the longer the on-time Toff of the NMOS tube is, the smaller the minimum value of the inductance current is.

因此,通過控制所述PMOS功率管和NMOS功率管的導通時間,就可以控制所述電感電流,防止所述電感電流的峰值過大,從而防止所述DCDC轉換器在過大的電感電流峰值下發生毀損。 Therefore, by controlling the conduction time of the PMOS power transistor and the NMOS power transistor, the inductor current can be controlled to prevent the peak value of the inductor current from being too large, thereby preventing the DCDC converter from being damaged under the excessive peak value of the inductor current .

在該實施例中,在放電狀態下,所述LC濾波電路中的電容C的電極板向地放電,電流方向為從地流向所述LC濾波電路的第一端,由於地的電位為0V,因此所述LC濾波電路的第一端的電位為負值,因此,所述採樣電壓SW與所述電感電流的大小成反比,所述電感大電流越大,所述採樣電壓SW越小,因此,只有在所述電感電流減小到一定值,使得所述採樣電壓SW增大到所述預設電壓後,才輸出置高的脈寬調製信號PWM,開始新一輪的充電,這保證了所述電感電流在一個脈寬調製信號PWM週期中,在充電開始時具有較低的初始值。 In this embodiment, in the discharge state, the electrode plate of the capacitor C in the LC filter circuit discharges to the ground, and the current direction is from the ground to the first end of the LC filter circuit. Since the potential of the ground is 0V, Therefore, the potential of the first end of the LC filter circuit is a negative value, therefore, the sampling voltage SW is inversely proportional to the magnitude of the inductor current, the larger the inductor current is, the smaller the sampling voltage SW is, therefore , only after the inductor current decreases to a certain value, so that the sampling voltage SW increases to the preset voltage, the pulse width modulation signal PWM that is set high is output to start a new round of charging, which ensures that the The inductor current has a lower initial value at the beginning of charging in one cycle of the pulse width modulation signal PWM.

在該實施例中,還限制所述脈寬調製信號PWM的低電平持續時長,所述低電平持續時長對應至一個脈寬調製信號PWM週期的充電時長,與一個脈寬調製信號PWM週期中的充電過程中電感電流的增大量正相關,因此,通過限制低電平持續時長,可以限制一個脈寬調製信號PWM週期的充電過程中,所述電感電流的增大量。 In this embodiment, the duration of the low level of the pulse width modulation signal PWM is also limited, and the duration of the low level corresponds to the charging duration of one cycle of the pulse width modulation signal PWM. The increase of the inductor current during the charging process in the PWM cycle of the signal is positively correlated. Therefore, by limiting the duration of the low level, the increase of the inductor current during the charging process of a pulse width modulation signal PWM cycle can be limited.

在該實施例中,對一個脈寬調製信號PWM週期的充電過程中所述電感電流的初始值以及所述電感電流的增大量都進行了限制,能夠有效防止所述電感電流峰值過大,從而防止所述DCDC轉換器在過大的電感電流峰值下毀損。 In this embodiment, the initial value of the inductor current and the increase of the inductor current during the charging process of a pulse width modulation signal PWM cycle are limited, which can effectively prevent the peak value of the inductor current from being too large, thereby preventing The DCDC converter is destroyed by excessive inductor current peaks.

請參閱圖4,為一實施例中所述DCDC轉換器的結構示意圖。 Please refer to FIG. 4 , which is a schematic structural diagram of the DCDC converter in an embodiment.

在該實施例中,所述振盪模組101包括導通控制單元104、關斷控制單元105、脈寬調製信號單元106以及驅動單元103。 In this embodiment, the oscillation module 101 includes a turn-on control unit 104 , a turn-off control unit 105 , a PWM signal unit 106 and a drive unit 103 .

所述導通控制單元104連接至所述LC濾波電路的第一端,以獲取所述採樣電壓SW,並接收所述脈寬調製信號PWM,所述導通控制單元104用於比較所述採樣電壓SW以及預設電壓,並根據比較結果以及所述脈寬調製信號PWM輸出所述第一控制信號。 The conduction control unit 104 is connected to the first end of the LC filter circuit to obtain the sampling voltage SW and receive the pulse width modulation signal PWM, and the conduction control unit 104 is used to compare the sampling voltage SW and a preset voltage, and output the first control signal according to the comparison result and the pulse width modulation signal PWM.

所述關斷控制單元105連接至所述導通控制單元104,用於根據所述第一控制信號輸出第二控制信號。 The turn-off control unit 105 is connected to the turn-on control unit 104 for outputting a second control signal according to the first control signal.

所述脈寬調製信號單元106連接至所述導通控制單元104以及關斷控制單元105,用於根據所述第一控制信號和第二控制信號形成所述脈寬調製信號PWM。 The pulse width modulation signal unit 106 is connected to the on control unit 104 and the off control unit 105 for forming the pulse width modulation signal PWM according to the first control signal and the second control signal.

所述驅動單元103連接至所述脈寬調製信號單元106的輸出端,用於對自所述脈寬調製信號單元106輸出的脈寬調製信號PWM進行整形放大,以便驅動所述輸出模組102中的PMOS功率管以及NMOS功率管。 The driving unit 103 is connected to the output terminal of the pulse width modulation signal unit 106, and is used for shaping and amplifying the pulse width modulation signal PWM output from the pulse width modulation signal unit 106, so as to drive the output module 102 The PMOS power tube and the NMOS power tube in it.

請參閱圖5,為一實施例中所述DCDC轉換器的電路結構示意圖。 Please refer to FIG. 5 , which is a schematic diagram of the circuit structure of the DCDC converter in an embodiment.

在該實施例中,所述導通控制單元104包括比較單元1041、電流鏡負載1042和反或閘電路。 In this embodiment, the conduction control unit 104 includes a comparison unit 1041 , a current mirror load 1042 and an inverting OR gate circuit.

所述比較單元1041包括柵極相互連接的第一NMOS管MN1和第二NMOS管MN2,所述第一NMOS管MN1的柵極和漏極相連接,所述第一NMOS管MN1的源極作為所述正輸入端,連接至所述LC 濾波電路的第一端,用於獲取所述採樣電壓SW,所述第二NMOS管MN2的源極作為所述負輸入端接地,以獲取0V的預設電壓。 The comparison unit 1041 includes a first NMOS transistor MN1 and a second NMOS transistor MN2 whose gates are connected to each other, the gate and drain of the first NMOS transistor MN1 are connected, and the source of the first NMOS transistor MN1 serves as The positive input, connected to the LC The first terminal of the filter circuit is used to obtain the sampling voltage SW, and the source of the second NMOS transistor MN2 is used as the negative input terminal to be grounded to obtain a preset voltage of 0V.

實際上,也可設置所述預設電壓為其他數值,所述預設電壓越大,在所述脈寬調製信號PWM的高電平占空比越大,所述NMOS功率管的導通時長越大,所述LC濾波電路的電感電流在一個週期內的降低幅度越大。因此,合理設置所述預設電壓,能夠防止電感電流的過度累積。 In fact, the preset voltage can also be set to other values. The larger the preset voltage, the larger the duty cycle of the high level of the pulse width modulation signal PWM, and the longer the conduction time of the NMOS power transistor is. The larger the , the greater the reduction range of the inductor current of the LC filter circuit in one cycle. Therefore, setting the preset voltage reasonably can prevent excessive accumulation of inductor current.

在該實施例中,所述電流鏡負載1042用於向所述比較單元1041提供偏置電流,包括:第一PMOS管MP1,源極接收所述輸入電壓Vin,漏極連接至所述第一NMOS管MN1的漏極;第二PMOS管MP2,源極接收所述輸入電壓Vin,漏極連接至所述第二NMOS管MN2的漏極;所述第一PMOS管MP1和第二PMOS管MP2的柵極還連接至一偏置電壓源VB,由所述偏置電壓源VB為所述第一PMOS管MP1和第二PMOS管MP2提供偏置電壓。 In this embodiment, the current mirror load 1042 is used to provide a bias current to the comparison unit 1041, including: a first PMOS transistor MP1, the source of which receives the input voltage Vin, and the drain connected to the first The drain of the NMOS transistor MN1; the second PMOS transistor MP2, the source receives the input voltage Vin, and the drain is connected to the drain of the second NMOS transistor MN2; the first PMOS transistor MP1 and the second PMOS transistor MP2 The gate of the gate is also connected to a bias voltage source VB, and the bias voltage source VB provides bias voltages for the first PMOS transistor MP1 and the second PMOS transistor MP2.

在圖5所示的實施例中,所述反或閘電路包括第一反或閘NOR1以及反相器INV1,所述第一反或閘NOR1具有兩個輸入端,其中一個輸入端連接至所述比較單元1041的輸出端,另一個輸入端通過反相器INV1連接至所述脈寬調製信號單元的輸出端,所述第一反或閘NOR1的輸出端輸出所述第一控制信號TFC。 In the embodiment shown in FIG. 5, the NOR gate circuit includes a first NOR gate NOR1 and an inverter INV1. The first NOR gate NOR1 has two input terminals, one of which is connected to the The output terminal of the comparison unit 1041, the other input terminal is connected to the output terminal of the pulse width modulation signal unit through the inverter INV1, and the output terminal of the first inverting OR gate NOR1 outputs the first control signal TFC.

在所述採樣電壓SW大於所述預設電壓時,所述比較單元1041輸出低電平,此時,所述反或閘電路的輸出信號與所述脈寬調製信號PWM相關,在所述脈寬調製信號PWM為高電平時,所述反或閘 輸出高電平作為所述第一控制信號TFC,在所述脈寬調製信號PWM為低電平時,所述反或閘輸出低電平作為所述第一控制信號TFC。在所述脈寬調製信號PWM為低電平時,所述反或閘電路的輸出信號持續為低電平。 When the sampling voltage SW is greater than the preset voltage, the comparison unit 1041 outputs a low level. At this time, the output signal of the NOR circuit is related to the pulse width modulation signal PWM. When the wide modulation signal PWM is at high level, the inverting OR gate Outputting a high level as the first control signal TFC, when the pulse width modulation signal PWM is at a low level, the NOR gate outputs a low level as the first control signal TFC. When the pulse width modulation signal PWM is at low level, the output signal of the NOR circuit is continuously at low level.

所述關斷控制單元105包括鏡像電流源、充電電容C1、電阻R和開關單元。 The shutdown control unit 105 includes a mirror current source, a charging capacitor C1, a resistor R and a switch unit.

所述開關單元包括一第三NMOS管MN3,所述第三NMOS管MN3的柵極連接至所述導通控制單元104的輸出端,由所述導通控制單元104輸出的第一控制信號TFC控制所述第三NMOS管MN3的開啟與關斷。所述第三NMOS管MN3的源極和漏極分別連接所述充電電容C1的上下極板,用於根據所述第一控制信號TFC控制所述充電電容C1接受所述鏡像電流源的充電,或控制所述充電電容C1放電。 The switch unit includes a third NMOS transistor MN3, the gate of the third NMOS transistor MN3 is connected to the output end of the conduction control unit 104, and is controlled by the first control signal TFC output by the conduction control unit 104. Turn on and turn off the third NMOS transistor MN3. The source and drain of the third NMOS transistor MN3 are respectively connected to the upper and lower plates of the charging capacitor C1, and are used to control the charging capacitor C1 to accept charging from the mirror current source according to the first control signal TFC, Or control the charging capacitor C1 to discharge.

所述鏡像電流源包括柵極相互連接的第三PMOS管MP3和第四PMOS管MP4,所述第三PMOS管MP3和第四PMOS管MP4的漏極作為輸出端,源極接收所述輸入電壓Vin。 The mirror current source includes a third PMOS transistor MP3 and a fourth PMOS transistor MP4 whose gates are connected to each other, the drains of the third PMOS transistor MP3 and the fourth PMOS transistor MP4 are used as output terminals, and the source receives the input voltage Vin.

所述電阻R連接於所述鏡像電流源的輸出端,用於控制所述充電電流的大小。 The resistor R is connected to the output terminal of the mirror current source for controlling the magnitude of the charging current.

所述充電電容C1通過所述電阻R連接至所述第三PMOS管MP3的漏極,所述鏡像電流源提供充電電流對所述充電電容C1進行充電。在所述開關單元的控制下,所述鏡像電流源以及所述充電電容C1之間的連接線路導通或關斷,對應至所述充電電容C1被所述充電電流充電,或者放電。 The charging capacitor C1 is connected to the drain of the third PMOS transistor MP3 through the resistor R, and the mirror current source provides a charging current to charge the charging capacitor C1. Under the control of the switch unit, the connection line between the mirror current source and the charging capacitor C1 is turned on or off, corresponding to the charging or discharging of the charging capacitor C1 by the charging current.

在該實施例中,所述關斷控制單元105還包括緩衝單元BUF,連接至所述充電電容C1的一端,用於對所述充電電容C1的端電壓VC進行整形,且所述緩衝單元BUF具有翻轉閾值Vth。在所述端電壓VC大於等於所述翻轉閾值Vth時,對所述端電壓VC進行翻轉輸出,輸出置高的第二控制信號TOC。在所述端電壓VC小於所述翻轉閾值Vth時,所述緩衝單元BUF輸出置低的第二控制信號TOC。 In this embodiment, the shutdown control unit 105 further includes a buffer unit BUF connected to one end of the charging capacitor C1 for shaping the terminal voltage VC of the charging capacitor C1, and the buffer unit BUF Has a flipping threshold Vth. When the terminal voltage VC is greater than or equal to the inversion threshold Vth, the terminal voltage VC is inverted and output, and the second control signal TOC set high is output. When the terminal voltage VC is smaller than the inversion threshold Vth, the buffer unit BUF outputs the second control signal TOC which is set low.

實際上,在一些實施例中,也可不設置所述緩衝單元BUF。此時,只要所述開關電容C1的端電壓VC為高電平,就輸出置高的所述第二控制信號TOC,若所述開關電容C1的端電壓VC為低電平,就輸出置低的所述第二控制信號TOC。 In fact, in some embodiments, the buffer unit BUF may not be provided. At this time, as long as the terminal voltage VC of the switch capacitor C1 is at a high level, the second control signal TOC that is set high will be output, and if the terminal voltage VC of the switch capacitor C1 is at a low level, the output will be set low. The second control signal TOC.

在所述第一控制信號TFC為高電平時,所述第三NMOS管MN3導通,連接所述第三NMOS管MN3的源漏極的充電電容C1對所述第三NMOS管MN3放電,所述充電電容C1的端電壓VC減小,到小於所述翻轉閾值Vth時,所述關斷控制單元105中的一個緩衝單元BUF輸出低電平作為所述第二控制信號TOC。 When the first control signal TFC is at a high level, the third NMOS transistor MN3 is turned on, and the charging capacitor C1 connected to the source and drain of the third NMOS transistor MN3 discharges the third NMOS transistor MN3, and the When the terminal voltage VC of the charging capacitor C1 decreases to less than the flipping threshold Vth, a buffer unit BUF in the shutdown control unit 105 outputs a low level as the second control signal TOC.

在所述第一控制信號TFC為低電平時,所述第三NMOS管MN3關斷,由所述鏡像電流源為所述充電電容C1充電,使得所述充電電容C1的端電壓VC增大;在所述端電壓VC增大至大於等於所述翻轉閾值Vth時,所述緩衝單元BUF輸出高電平作為所述第二控制信號TOC。 When the first control signal TFC is at a low level, the third NMOS transistor MN3 is turned off, and the charging capacitor C1 is charged by the mirror current source, so that the terminal voltage VC of the charging capacitor C1 increases; When the terminal voltage VC increases to be greater than or equal to the inversion threshold Vth, the buffer unit BUF outputs a high level as the second control signal TOC.

在該實施例中,所述關斷控制單元105還包括電阻R,設置於所述鏡像電流源下方,用於控制所述充電電流的大小。在一些實 施例中,可根據需要設置所述電阻R的阻值大小,以調整所述充電電流的大小,從而調整將所述充電電容C1的端電壓VC充電至翻轉閾值Vth以上的充電時長,充電電流越大,充電時長越短,所述第二控制信號TOC由低電平翻轉成高電平所需的時長越短。 In this embodiment, the shutdown control unit 105 further includes a resistor R disposed under the mirror current source for controlling the magnitude of the charging current. in some real In an embodiment, the resistance value of the resistor R can be set as required to adjust the charging current, thereby adjusting the charging time for charging the terminal voltage VC of the charging capacitor C1 above the flipping threshold Vth. The larger the current, the shorter the charging time, and the shorter the time required for the second control signal TOC to change from low level to high level.

在該實施例中,所述脈寬調製信號單元106(詳見圖4)包括RS鎖存器201,用於根據所述第一控制信號TFC以及第二控制信號TOC輸出所述脈寬調製信號PWM。 In this embodiment, the pulse width modulation signal unit 106 (see FIG. 4 for details) includes an RS latch 201 for outputting the pulse width modulation signal according to the first control signal TFC and the second control signal TOC PWM.

所述RS鎖存器201包括第二反或閘NOR2和第三反或閘NOR3。所述第二反或閘NOR2的一輸入端作為R輸入端,連接至所述關斷控制單元105的輸出端,另一輸入端連接至第三反或閘NOR3的輸出端,所述第二反或閘NOR2的輸出端作為Q輸出端。 The RS latch 201 includes a second NOR gate NOR2 and a third NOR gate NOR3. One input terminal of the second NOR gate NOR2 is used as the R input terminal, which is connected to the output terminal of the shutdown control unit 105, and the other input terminal is connected to the output terminal of the third NOR gate NOR3. The output terminal of the inverse OR gate NOR2 is used as the Q output terminal.

所述第三反或閘NOR3的一輸入端作為S輸入端,連接至所述導通控制單元104的輸出端,另一輸入端連接至所述第二反或閘NOR2的輸出端。 One input terminal of the third NOR gate NOR3 is used as an S input terminal and connected to the output terminal of the conduction control unit 104 , and the other input terminal is connected to the output terminal of the second NOR gate NOR2 .

在圖5所示的實施例中,所述RS鎖存器的Q輸出端後還連接有一個反相器組INV2,在所述驅動單元沒有反相功能時,所述反相器組INV2包括雙數個依次連接的反相器,否則,所述反相器組INV2包括單數個依次連接的反相器。所述反相器組INV2可以起到對波形整形的效果。 In the embodiment shown in FIG. 5, an inverter group INV2 is connected after the Q output terminal of the RS latch. When the driving unit has no inverting function, the inverter group INV2 includes An even number of sequentially connected inverters, otherwise, the inverter group INV2 includes an odd number of sequentially connected inverters. The inverter group INV2 can have the effect of shaping the waveform.

所述RS鎖存器201具有鎖存特性,具體的:(1)在所述R輸入端以及S輸入端輸入的都是低電平時,所述Q輸出端輸出的信號相較於上一狀態保持不變; (2)在所述R輸入端輸入的是高電平、S輸入端輸入的是低電平時,所述Q輸出端輸出高電平;(3)在所述R輸入端輸入的是低電平、S輸入端輸入的是高電平時,所述Q輸出端輸出低電平;(4)在所述R輸入端以及S輸入端輸入的都是高電平時,所述Q輸出端輸出低電平。 The RS latch 201 has a latching characteristic, specifically: (1) when both the R input terminal and the S input terminal are input at a low level, the signal output by the Q output terminal is compared with the previous state constant; (2) When the input of the R input terminal is a high level and the input of the S input terminal is a low level, the Q output terminal outputs a high level; (3) the input of the R input terminal is a low level When the input of the flat and S input terminals is a high level, the Q output terminal outputs a low level; (4) when both the R input terminal and the S input terminal are input at a high level, the Q output terminal outputs a low level level.

此處可以參閱圖6,為一實施例中各個信號的時序圖。 Here you can refer to FIG. 6 , which is a timing diagram of various signals in an embodiment.

在圖6所示的實施例中,在(t0,t1)時間段內,所述充電電容C1(請參閱圖5)經過充電電流的充電,其端電壓VC大於等於所述翻轉閾值Vth,所述第二控制信號TOC為高電平,此時,所述採樣電壓SW小於所述預設電壓,所述比較單元輸出一高電平,該高電平輸入至所述反或閘電路的一個輸入端,所述反或閘電路輸出置低的第一控制信號TFC。此時,所述脈寬調製信號PWM為RS鎖存器的輸出端的反向,在所述第二控制信號TOC為高時,所述Q輸出端輸出低電平,因此,脈寬調製信號PWM為高。 In the embodiment shown in FIG. 6, during the time period (t0, t1), the charging capacitor C1 (see FIG. 5) is charged by the charging current, and its terminal voltage VC is greater than or equal to the flipping threshold Vth, so The second control signal TOC is at a high level, at this time, the sampling voltage SW is less than the preset voltage, the comparison unit outputs a high level, and the high level is input to one of the inverting OR gate circuits At the input end, the NOR circuit outputs the first control signal TFC which is set low. At this time, the pulse width modulation signal PWM is the reverse of the output terminal of the RS latch, and when the second control signal TOC is high, the Q output terminal outputs a low level, therefore, the pulse width modulation signal PWM for high.

由於在(t0,t1)時間段內,所述第一控制信號TFC的低電平控制所述關斷控制電路中的電容C的端電壓VC持續增大,因此,端電壓VC在(t0,t1)時間段內始終大於翻轉閾值Vth,因此,(t0,t1)時間段內所述第二控制信號TOC保持高電平,脈寬調製信號PWM也保持高電平。 Because in the time period (t0, t1), the low level of the first control signal TFC controls the terminal voltage VC of the capacitor C in the shutdown control circuit to continuously increase, therefore, the terminal voltage VC is at (t0, The time period t1) is always greater than the flipping threshold Vth, therefore, the second control signal TOC maintains a high level during the time period (t0, t1), and the pulse width modulation signal PWM also maintains a high level.

在(t0,t1)時間段內,在脈寬調製信號PWM為高的作用下,NMOS功率管導通,IL逐漸減小,採樣電壓SW逐漸增大。在採 樣電壓SW增大至大於等於所述預設電壓時,即t1時刻,所述比較單元的輸出翻轉,輸出一個低電平,此時,所述第一反或閘NOR1的輸出由脈寬調製信號PWM決定。 During the time period (t0, t1), under the action of the pulse width modulation signal PWM being high, the NMOS power transistor is turned on, IL gradually decreases, and the sampling voltage SW gradually increases. in mining When the sample voltage SW increases to be greater than or equal to the preset voltage, that is, at time t1, the output of the comparison unit is reversed and outputs a low level. At this time, the output of the first inverse OR gate NOR1 is modulated by the pulse width signal PWM decision.

由於在t1的上一時刻,脈寬調製信號PWM為高電平,經所述反或閘電路中的反相器INV2反相後,自所述第一反或閘NOR1的另一輸入端輸入,因此,在t1時刻,所述第一反或閘NOR1輸出高電平,第一控制信號TFC為高電平。 Since at the previous moment of t1, the pulse width modulation signal PWM was at a high level, after being inverted by the inverter INV2 in the inverter circuit, it was input from the other input end of the first inverter NOR1 Therefore, at time t1, the first NOR gate NOR1 outputs a high level, and the first control signal TFC is at a high level.

在t1時刻,由於第一控制信號TFC轉成高電平,所以第二控制信號TOC電路中的電容C瞬間放電至端電壓VC小於翻轉閾值Vth,翻轉為低電平。因此,所述第二控制信號TOC也在所述第一控制信號TFC翻轉的瞬間,翻轉為低電平。 At time t1, since the first control signal TFC turns to a high level, the capacitor C in the circuit of the second control signal TOC discharges instantaneously until the terminal voltage VC is lower than the flipping threshold Vth, and flips to a low level. Therefore, the second control signal TOC also inverts to a low level at the moment when the first control signal TFC inverts.

此時,RS鎖存器201的Q輸出端輸出的內容,與所述S輸入端輸入的信號相關。由於第一控制信號TFC為高,因此第三反或閘NOR3輸出低電平,NOR2的兩個輸入端分別輸入第二控制信號TOC低電平以及第三反或閘NOR3輸出的電平,因此Q輸出端輸出高電平,脈寬調製信號PWM翻轉為低。但由於時延的存在,脈寬調製信號PWM仍在(t1,t2)時間段保持高電平,直至t2時刻才完成翻轉,轉換成低電平。 At this time, the content output from the Q output terminal of the RS latch 201 is related to the signal input from the S input terminal. Since the first control signal TFC is high, the third NOR gate NOR3 outputs a low level, and the two input terminals of NOR2 respectively input the second control signal TOC low level and the level output by the third NOR gate NOR3, so The Q output terminal outputs a high level, and the pulse width modulation signal PWM turns low. However, due to the existence of time delay, the pulse width modulation signal PWM still maintains a high level during the time period (t1, t2), and does not complete the inversion until the time t2, and converts to a low level.

在t2時刻,由於脈寬調製信號PWM翻轉至低,採樣電壓SW仍大於預設電壓,比較單元仍輸出低電平,因此,所述第一反或閘NOR1輸出置低的第一控制信號TFC。 At time t2, since the pulse width modulation signal PWM is turned low, the sampling voltage SW is still greater than the preset voltage, and the comparison unit still outputs a low level, therefore, the first inverting OR gate NOR1 outputs the first control signal TFC which is set low .

在(t2,t3)時間段內,由於第一控制信號TFC置低, 關斷控制模組中的電容C再次被充電,端電壓VC再次升高,在t3時刻,端電壓VC升高至大於等於所述翻轉閾值Vth,第二控制信號TOC又再次翻轉為高電平。由於在(t2,t3)時間段內,脈寬調製信號PWM持續為低,因此所述第一反或閘NOR1持續輸出低電平。 During the time period (t2, t3), since the first control signal TFC is set low, The capacitor C in the shutdown control module is charged again, and the terminal voltage VC rises again. At time t3, the terminal voltage VC rises to be greater than or equal to the flipping threshold Vth, and the second control signal TOC flips to a high level again. . Since the pulse width modulation signal PWM is continuously low during the time period (t2, t3), the first inverting OR gate NOR1 continuously outputs a low level.

本申請還有一實施例中提供了一種DCDC轉換器的軟啟動方法。 Another embodiment of the present application provides a soft start method for a DCDC converter.

請同時參閱圖3至圖7,其中圖7為一實施例中所述軟啟動方法的步驟流程示意圖。 Please refer to FIG. 3 to FIG. 7 at the same time, wherein FIG. 7 is a schematic flowchart of the steps of the soft start method in an embodiment.

在該實施例中,所述DCDC轉換器包括輸出模組102(詳見圖3、4、5),所述輸出模組102包括NMOS功率管、PMOS功率管以及LC濾波電路,所述LC濾波電路第一端連接至所述NMOS功率管和PMOS功率管的連接點,第二端接地;所述方法包括以下步驟: In this embodiment, the DCDC converter includes an output module 102 (see FIGS. 3, 4, and 5 for details), and the output module 102 includes an NMOS power transistor, a PMOS power transistor, and an LC filter circuit. The LC filter The first end of the circuit is connected to the connection point of the NMOS power transistor and the PMOS power transistor, and the second end is grounded; the method includes the following steps:

步驟S401:從所述LC濾波電路第一端獲取採樣電壓SW(詳見圖3、4、5)。 Step S401: Obtain a sampling voltage SW from the first terminal of the LC filter circuit (see Figures 3, 4, and 5 for details).

所述採樣電壓SW採樣自所述LC濾波電路的第一端,且所述採樣電壓SW跟隨所述LC濾波電路中的電感L(詳見圖3、4、5)的電感電流變化,具體的,所述採樣電壓SW與電感L的電感電流大小負相關。所述電感L的電感電流隨著NMOS功率管和PMOS功率管的交替導通發生變化。 The sampling voltage SW is sampled from the first end of the LC filter circuit, and the sampling voltage SW follows the change of the inductance current of the inductance L (see Figures 3, 4, 5) in the LC filter circuit, specifically , the sampling voltage SW is negatively correlated with the magnitude of the inductor current of the inductor L. The inductor current of the inductor L changes with the alternate conduction of the NMOS power transistor and the PMOS power transistor.

步驟S402:提供脈寬調製信號PWM以依次驅動所述NMOS功率管和PMOS功率管,並根據所述採樣電壓SW的變化調整所述脈寬調製信號的占空比,以控制所述PMOS功率管和NMOS功率管的 導通時間。 Step S402: Provide a pulse width modulation signal PWM to sequentially drive the NMOS power transistor and the PMOS power transistor, and adjust the duty cycle of the pulse width modulation signal according to the change of the sampling voltage SW to control the PMOS power transistor and NMOS power transistors on-time.

根據所述採樣電壓的變化調整所述脈寬調製信號的占空比,以控制所述PMOS功率管和NMOS功率管的導通時間時,包括以下步驟:比較所述採樣電壓SW與預設電壓,在所述NMOS功率管導通時,若所述採樣電壓SW大於預設電壓,則通過所述脈寬調製信號PWM控制所述PMOS功率管導通,控制所述PMOS功率管的導通時長小於等於預設時長。 When adjusting the duty ratio of the pulse width modulation signal according to the change of the sampling voltage to control the conduction time of the PMOS power transistor and the NMOS power transistor, the following steps are included: comparing the sampling voltage SW with a preset voltage, When the NMOS power transistor is turned on, if the sampling voltage SW is greater than a preset voltage, the PMOS power transistor is controlled to be turned on through the pulse width modulation signal PWM, and the conduction duration of the PMOS power transistor is controlled to be less than or equal to a preset voltage. Set duration.

NMOS功率管導通時,對應至所述LC濾波電流中的電容C放電,所述電感L的電感電流降低。所述採樣電壓SW大於預設電壓,對應至所述電感電流L減小至一定電流。PWM控制所述PMOS功率管導通,對應至所述LC濾波電流中的電容C被充電,所述電感L的電感電流增大。控制所述PMOS功率管的導通時長小於等於預設時長,對應至限制所述電感L的電感電流的增大量。 When the NMOS power transistor is turned on, corresponding to the discharge of the capacitor C in the LC filter current, the inductor current of the inductor L decreases. The sampling voltage SW is greater than the preset voltage, corresponding to the inductor current L decreasing to a certain current. PWM controls the PMOS power transistor to be turned on, corresponding to the capacitor C in the LC filter current being charged, and the inductor current of the inductor L increases. Controlling the conduction duration of the PMOS power transistor to be less than or equal to a preset duration corresponds to limiting the increase of the inductor current of the inductor L.

請同時參閱圖8,為一實施例中圖7中步驟S402展開後的步驟流程示意圖。 Please refer to FIG. 8 at the same time, which is a schematic flow chart of the expanded step S402 in FIG. 7 in an embodiment.

在該實施例中,根據所述採樣電壓SW的大小調整所述脈寬調製信號PWM的占空比時,包括以下步驟: In this embodiment, when adjusting the duty ratio of the pulse width modulation signal PWM according to the magnitude of the sampling voltage SW, the following steps are included:

步驟S501:根據所述採樣電壓SW的大小獲取第一控制信號TFC和第二控制信號TOC。 Step S501: Obtain the first control signal TFC and the second control signal TOC according to the magnitude of the sampling voltage SW.

獲取第一控制信號TFC時,包括以下步驟:獲取所述脈寬調製信號PWM;在所述採樣電壓SW大於所述預設電壓時,若所述脈寬調製信號PWM為高電平,則輸出置高的所述第一控制信號TFC, 若所述脈寬調製信號PWM為低電平,則輸出置低的所述第一控制信號TFC;和/或,在所述採樣電壓SW小於所述預設電壓時,所述比較單元輸出高電平,輸出置低的所述第一控制信號TFC。 When obtaining the first control signal TFC, the following steps are included: obtaining the pulse width modulation signal PWM; when the sampling voltage SW is greater than the preset voltage, if the pulse width modulation signal PWM is at a high level, output setting the first control signal TFC high, If the pulse width modulation signal PWM is at a low level, output the first control signal TFC which is set low; and/or, when the sampling voltage SW is less than the preset voltage, the comparison unit outputs a high level, and output the first control signal TFC which is set low.

步驟S502:根據所述第一控制信號TFC和第二控制信號TOC形成所述脈寬調製信號PWM。 Step S502: Form the pulse width modulation signal PWM according to the first control signal TFC and the second control signal TOC.

請參閱圖9,為一實施例中圖8的步驟S502展開後的步驟流程示意圖。 Please refer to FIG. 9 , which is a schematic flow chart of the expanded step S502 in FIG. 8 in an embodiment.

在該實施例中,根據所述採樣電壓SW的變化獲取第二控制信號TOC時,包括以下步驟:步驟S601:提供充電電容C1(詳見圖4、5),並提供充電電流對所述充電電容C1充電;步驟S602:在所述第一控制信號TFC置高時,切斷所述充電電流與所述充電電容C1的連接,並控制所述充電電容C1放電;步驟S603:獲取所述充電電容C1的端電壓VC(詳見圖5),在所述端電壓VC高於一翻轉閾值Vth(詳見圖5)時,輸出置高的所述第二控制信號TOC,否則輸出置低的所述第二控制信號TOC。需要注意的是,這裡的翻轉閾值Vth是由緩衝單元BUF提供的,實際上,當不設置所述緩衝單元BUF時,也可以使用高電平和低電平在翻轉時的要達到的電平作為所述翻轉閾值Vth。 In this embodiment, when acquiring the second control signal TOC according to the change of the sampling voltage SW, the following steps are included: Step S601: Provide a charging capacitor C1 (see Figures 4 and 5 for details), and provide a charging current to charge the Capacitor C1 is charged; Step S602: When the first control signal TFC is set high, cut off the connection between the charging current and the charging capacitor C1, and control the charging capacitor C1 to discharge; Step S603: Obtain the charging The terminal voltage VC of the capacitor C1 (see FIG. 5 for details), when the terminal voltage VC is higher than a flipping threshold Vth (see FIG. 5 for details), output the second control signal TOC that is set high, otherwise output the second control signal TOC that is set low The second control signal TOC. It should be noted that the flip threshold Vth here is provided by the buffer unit BUF. In fact, when the buffer unit BUF is not set, the level to be reached when the high level and the low level are flipped can also be used as The flipping threshold Vth.

根據所述採樣電壓SW的變化獲取第二控制信號TOC時,還包括以下步驟:改變充電電容C1、充電電流以及所述翻轉閾值Vth,從而調整所述第二控制信號TOC的置高時長。 When acquiring the second control signal TOC according to the change of the sampling voltage SW, the following steps are further included: changing the charging capacitor C1, the charging current and the flipping threshold Vth, thereby adjusting the high duration of the second control signal TOC.

在該實施例中,所述PMOS功率管的導通時間Ton與充電電流的大小、充電電容C1的容值以及翻轉閾值的大小均有關,且關係式如下:

Figure 110147064-A0305-02-0024-1
其中Ton為導通時長,所述I為所述充電電流,C為所述充電電容C1的容值,翻轉閾值VTH為所述緩衝單元BUF的翻轉閾值,VGSP3為所述鏡像電流源的電晶體的等效電壓降,R為所述電阻R的阻值。 In this embodiment, the turn-on time Ton of the PMOS power transistor is related to the magnitude of the charging current, the capacitance of the charging capacitor C1 and the magnitude of the flipping threshold, and the relationship is as follows:
Figure 110147064-A0305-02-0024-1
Wherein Ton is the conduction duration, the I is the charging current, C is the capacitance of the charging capacitor C1, the flipping threshold VTH is the flipping threshold of the buffer unit BUF, and VGSP3 is the transistor of the mirror current source The equivalent voltage drop, R is the resistance value of the resistor R.

因此,在一些實施例中,可以通過調整鏡像電流源連接到的輸入電壓Vin、充電電容C1的容值C、電阻R的阻值R以及鏡像電流源的電晶體的等效電壓降VGSP3來調整所述導通時長。 Therefore, in some embodiments, it can be adjusted by adjusting the input voltage Vin connected to the mirror current source, the capacitance C of the charging capacitor C1, the resistance R of the resistor R, and the equivalent voltage drop VGSP3 of the transistor of the mirror current source. The on-time duration.

所述導通時長Ton與所述電感電流峰值Ipeak的關係式如下:

Figure 110147064-A0305-02-0024-2
其中,Ipeak為所述電感電流的峰值,L為所述電感L的自感係數。 The relationship between the conduction duration Ton and the inductor current peak value Ipeak is as follows:
Figure 110147064-A0305-02-0024-2
Wherein, Ipeak is the peak value of the inductor current, and L is the self-inductance of the inductor L.

在該實施例中,通過控制所述PMOS功率管的導通時長Ton,可以控制所述電感電流的峰值,防止該峰值過大,造成電感飽和及DCDC轉換器燒毀。 In this embodiment, by controlling the on-time Ton of the PMOS power transistor, the peak value of the inductor current can be controlled to prevent the peak value from being too large, causing inductor saturation and burning out of the DCDC converter.

在該實施例中,可以改變所述充電電容C1的容值、電阻R的電阻的大小以及緩衝單元BUF的翻轉閾值VTH來調整所述電感電 流峰值Ipeak。 In this embodiment, the capacitance of the charging capacitor C1, the resistance of the resistor R, and the flipping threshold VTH of the buffer unit BUF can be changed to adjust the inductor current. Flow peak value Ipeak.

在該實施例中,採用RS鎖存器來處理所述第一控制信號TFC和第二控制信號TOC,從而形成所述脈寬調製信號PWM。具體的,所述RS鎖存器的R輸入端連接至所述關斷控制單元105(詳見圖4)的輸出端,S輸入端連接至所述導通控制單元104(詳見圖4)的輸出端,Q輸出端連接一反相器,從而輸出所述脈寬調製信號PWM。 In this embodiment, an RS latch is used to process the first control signal TFC and the second control signal TOC, thereby forming the pulse width modulation signal PWM. Specifically, the R input terminal of the RS latch is connected to the output terminal of the shutdown control unit 105 (see FIG. 4 for details), and the S input terminal is connected to the output terminal of the conduction control unit 104 (see FIG. 4 for details). The output terminal, the Q output terminal is connected with an inverter, so as to output the pulse width modulation signal PWM.

本申請的一實施例中,還提供了一種電子設備,所述電子設備包括圖4所示的實施例中的DCDC轉換器。由於具有該DCDC轉換器,所述電子設備能夠根據採樣電壓來調整脈寬調製信號的占空比,從而調節所述PMOS功率管和NMOS功率管的導通時長,使所述電感電流在減小和增大之間切換。並且,通過設置合適的預設電壓和預設時長,可以讓所述電感電流從一個較低的初始點開始增大,並且限制所述電感電流在一個週期內的增大時長,防止輸出較大的電感電流至外接負載,造成外接負載的毀損。 In an embodiment of the present application, an electronic device is also provided, and the electronic device includes the DCDC converter in the embodiment shown in FIG. 4 . Due to the DCDC converter, the electronic device can adjust the duty cycle of the pulse width modulation signal according to the sampling voltage, thereby adjusting the conduction time of the PMOS power transistor and the NMOS power transistor, so that the inductor current is reduced to toggle between and increase. Moreover, by setting an appropriate preset voltage and preset duration, the inductor current can be increased from a lower initial point, and the duration of the inductor current increase within one cycle can be limited to prevent the output A large inductive current flows to the external load, causing damage to the external load.

以上所述僅為本申請的實施例,並非因此限制本申請的專利範圍,凡是利用本申請說明書及附圖內容所作的等效結構或等效流程變換,例如各實施例之間技術特徵的相互結合,或直接或間接運用在其他相關的技術領域,均同理包括在本申請的專利保護範圍內。 The above is only an embodiment of the application, and does not limit the patent scope of the application. Any equivalent structure or equivalent process conversion made by using the specification and accompanying drawings of the application, such as the mutual technical characteristics between the various embodiments Combination, or direct or indirect application in other related technical fields, are all included in the scope of patent protection of this application.

101:振盪模組 101:Oscillation module

102:輸出模組 102: Output module

103:驅動單元 103: Drive unit

104:導通控制單元 104: Turn on the control unit

1041:比較單元 1041: comparison unit

1042:電流鏡負載 1042: current mirror load

105:關斷控制單元 105:Shutdown control unit

201:RS鎖存器 201: RS latch

Claims (17)

一種DCDC轉換器,其特徵在於,包括:振盪模組,用於根據採樣電壓輸出脈寬調製信號;輸出模組,包括PMOS功率管、NMOS功率管以及LC濾波電路,其中:所述PMOS功率管的源極用於接收輸入電壓,柵極連接至所述振盪模組的輸出端;所述NMOS功率管的源極接地,柵極連接至所述振盪模組的輸出端,漏極連接至所述PMOS功率管的漏極;所述LC濾波電路第一端連接至所述PMOS功率管的漏極,所述第一端連接至所述振盪模組,以向所述振盪模組提供所述採樣電壓,所述LC濾波電路第二端用於輸出一輸出電壓;所述振盪模組根據所述採樣電壓的大小控制所述脈寬調製信號的占空比,在所述脈寬調製信號為高電平時,若所述採樣電壓大於預設電壓,則所述脈寬調製信號翻轉為低電平,且所述低電平的持續時長小於等於預設時長。 A DCDC converter, characterized in that it includes: an oscillation module for outputting a pulse width modulation signal according to a sampling voltage; an output module including a PMOS power transistor, an NMOS power transistor and an LC filter circuit, wherein: the PMOS power transistor The source of the NMOS power transistor is used to receive the input voltage, and the gate is connected to the output terminal of the oscillation module; the source of the NMOS power transistor is grounded, the gate is connected to the output terminal of the oscillation module, and the drain is connected to the output terminal of the oscillation module. The drain of the PMOS power transistor; the first end of the LC filter circuit is connected to the drain of the PMOS power transistor, and the first end is connected to the oscillation module to provide the oscillation module with the Sampling voltage, the second terminal of the LC filter circuit is used to output an output voltage; the oscillation module controls the duty ratio of the pulse width modulation signal according to the size of the sampling voltage, and the pulse width modulation signal is When at a high level, if the sampling voltage is greater than a preset voltage, the pulse width modulation signal is reversed to a low level, and the duration of the low level is less than or equal to a preset duration. 如請求項1所述的DCDC轉換器,其中,所述振盪模組根據所述採樣電壓的大小控制所述脈寬調製信號的占空比時,比較所述採樣電壓與預設電壓,在所述NMOS功率管導通時,若所述採樣電壓大於預設電壓,則通過所述脈寬調製信號控制所述PMOS功率管導通,並控制所述PMOS功率管的導通時長小於等於預設時長。 The DCDC converter according to claim 1, wherein when the oscillation module controls the duty ratio of the pulse width modulation signal according to the magnitude of the sampling voltage, it compares the sampling voltage with a preset voltage, and when the When the NMOS power transistor is turned on, if the sampling voltage is greater than the preset voltage, the PMOS power transistor is controlled to be turned on through the pulse width modulation signal, and the conduction duration of the PMOS power transistor is controlled to be less than or equal to the preset duration . 如請求項1所述的DCDC轉換器,其中,所述振盪模組包括: 導通控制單元,連接至所述LC濾波電路的第一端,並接收所述脈寬調製信號,所述導通控制單元用於比較所述採樣電壓和所述預設電壓,並根據比較結果和所述脈寬調製信號輸出第一控制信號;關斷控制單元,連接至所述導通控制單元,用於根據所述第一控制信號輸出第二控制信號;脈寬調製信號單元,連接至所述導通控制單元以及關斷控制單元,用於根據所述第一控制信號和第二控制信號形成所述脈寬調製信號;驅動單元,連接至所述脈寬調製信號單元,用於根據所述脈寬調製信號輸出驅動信號驅動所述PMOS功率管和NMOS功率管。 The DCDC converter as described in claim 1, wherein the oscillation module includes: A conduction control unit, connected to the first end of the LC filter circuit, and receiving the pulse width modulation signal, the conduction control unit is used to compare the sampled voltage with the preset voltage, and according to the comparison result and the The pulse width modulation signal outputs a first control signal; the shutdown control unit is connected to the conduction control unit, and is used to output a second control signal according to the first control signal; the pulse width modulation signal unit is connected to the conduction control unit. a control unit and a shutdown control unit, configured to form the pulse width modulation signal according to the first control signal and the second control signal; a drive unit, connected to the pulse width modulation signal unit, for generating the pulse width modulation signal according to the pulse width The modulation signal outputs a driving signal to drive the PMOS power transistor and the NMOS power transistor. 如請求項3所述的DCDC轉換器,其中,所述導通控制單元包括:比較單元,具有兩個輸入端,其中一個輸入端連接至所述採樣電壓的輸出端,另一個輸入端用於接收所述預設電壓,並輸出所述比較結果;電流鏡負載,用於為所述比較單元提供偏置電流;反或閘電路,包括第一反或閘以及反相器,所述第一反或閘具有兩個輸入端,其中一個輸入端連接至所述比較單元的輸出端,另一個輸入端通過所述反相器連接至所述脈寬調製信號單元的輸出端,所述第一反或閘的輸出端輸出所述第一控制信號。 The DCDC converter according to claim 3, wherein the conduction control unit includes: a comparison unit having two input terminals, one of which is connected to the output terminal of the sampling voltage, and the other input terminal is used to receive The preset voltage, and output the comparison result; a current mirror load, used to provide a bias current for the comparison unit; an inverting or gate circuit, including a first inverting or gate and an inverter, the first inverter The OR gate has two input terminals, one of which is connected to the output terminal of the comparison unit, and the other input terminal is connected to the output terminal of the pulse width modulation signal unit through the inverter, and the first inverter The output terminal of the OR gate outputs the first control signal. 如請求項4所述的DCDC轉換器,其中,所述比較單元包括:柵極相互連接的第一NMOS管和第二NMOS管,所述第一NMOS管的柵極和漏極相連接,所述第一NMOS管的源極連接至所述LC濾波電路的第一端,所述第二NMOS管的源極接收所述預設電壓;所述電流鏡負載包括: 第一PMOS管,源極接收所述輸入電壓,漏極連接至所述第一NMOS管的漏極;第二PMOS管,源極接收所述輸入電壓,漏極連接至所述第二NMOS管的漏極;所述第一PMOS管和第二PMOS管的柵極還連接至一偏置電壓源,由所述偏置電壓源為所述第一PMOS管和第二PMOS管提供偏置電壓。 The DCDC converter according to claim 4, wherein the comparison unit includes: a first NMOS transistor and a second NMOS transistor whose gates are connected to each other, and the gate and drain of the first NMOS transistor are connected, so The source of the first NMOS transistor is connected to the first end of the LC filter circuit, and the source of the second NMOS transistor receives the preset voltage; the current mirror load includes: The first PMOS transistor, the source receives the input voltage, and the drain is connected to the drain of the first NMOS transistor; the second PMOS transistor, the source receives the input voltage, and the drain is connected to the second NMOS transistor The drain of the first PMOS tube and the gate of the second PMOS tube are also connected to a bias voltage source, and the bias voltage source is provided for the first PMOS tube and the second PMOS tube. . 如請求項1所述的DCDC轉換器,其中,所述預設電壓為0V。 The DCDC converter according to claim 1, wherein the preset voltage is 0V. 如請求項3所述的DCDC轉換器,其中,所述關斷控制單元包括:鏡像電流源,用於提供充電電流,包括柵極相互連接的第三PMOS管以及第四PMOS管,且所述第三PMOS管以及第四PMOS管的源極接收所述輸入電壓;電阻,所述電阻連接於所述鏡像電流源的輸出端,用於控制所述充電電流的大小;充電電容,通過所述電阻連接至所述第三PMOS管的漏極;開關單元,連接至所述導通控制單元的輸出端,且連接於所述鏡像電流源和所述充電電容,用於根據所述第一控制信號控制所述充電電容接受所述鏡像電流源的充電,或控制所述充電電容放電。 The DCDC converter according to claim 3, wherein the shutdown control unit includes: a mirror current source for providing charging current, including a third PMOS transistor and a fourth PMOS transistor whose gates are connected to each other, and the The source electrodes of the third PMOS transistor and the fourth PMOS transistor receive the input voltage; the resistor, the resistor is connected to the output terminal of the mirror current source, and is used to control the magnitude of the charging current; the charging capacitor is passed through the The resistor is connected to the drain of the third PMOS transistor; the switch unit is connected to the output terminal of the conduction control unit, and is connected to the mirror current source and the charging capacitor, and is used to control the current according to the first control signal Controlling the charging capacitor to accept charging from the mirror current source, or controlling the charging capacitor to discharge. 如請求項7所述的DCDC轉換器,其中,所述關斷控制單元還包括:緩衝單元,連接至所述充電電容,用於對所述充電電容的端電壓進行整形,且所述緩衝單元具有翻轉閾值,在所述端電壓大於等於所述翻轉閾值時,對所述端電壓進行翻轉輸出。 The DCDC converter according to claim 7, wherein the shutdown control unit further includes: a buffer unit connected to the charging capacitor for shaping the terminal voltage of the charging capacitor, and the buffer unit There is an inversion threshold, and when the terminal voltage is greater than or equal to the inversion threshold, the terminal voltage is inverted and output. 如請求項3所述的DCDC轉換器,其中,所述脈寬調製信號單元包括:RS鎖存器,包括第二反或閘和第三反或閘,其中:所述第二反或閘的一輸入端作為R輸入端,連接至所述關斷控制單元的輸出端,另一輸入端連接至第三反或閘的輸出端,所述第二反或閘的輸出端作為Q輸出端;所述第三反或閘的一輸入端作為S輸入端,連接至所述導通控制單元的輸出端,另一輸入端連接至所述第二反或閘的輸出端。 The DCDC converter according to claim 3, wherein the pulse width modulation signal unit includes: an RS latch, including a second NOR gate and a third NOR gate, wherein: the second NOR gate One input terminal is used as the R input terminal, connected to the output terminal of the shutdown control unit, and the other input terminal is connected to the output terminal of the third NOR gate, and the output terminal of the second NOR gate is used as the Q output terminal; One input terminal of the third NOR gate serves as an S input terminal, which is connected to the output terminal of the conduction control unit, and the other input terminal is connected to the output terminal of the second NOR gate. 一種DCDC轉換器的軟啟動方法,其特徵在於,所述DCDC轉換器包括輸出模組,所述輸出模組包括NMOS功率管、PMOS功率管以及LC濾波電路,所述LC濾波電路第一端連接至所述NMOS功率管和PMOS功率管的連接點,第二端接地;所述方法包括以下步驟:從所述LC濾波電路第一端獲取採樣電壓;提供脈寬調製信號以驅動所述NMOS功率管和PMOS功率管,並根據所述採樣電壓的變化調整所述脈寬調製信號的占空比,以控制所述PMOS功率管和NMOS功率管的導通時間。 A soft start method for a DCDC converter, characterized in that the DCDC converter includes an output module, the output module includes an NMOS power transistor, a PMOS power transistor, and an LC filter circuit, and the first end of the LC filter circuit is connected to To the connection point of the NMOS power transistor and the PMOS power transistor, the second end is grounded; the method includes the following steps: obtaining a sampling voltage from the first end of the LC filter circuit; providing a pulse width modulation signal to drive the NMOS power tube and PMOS power tube, and adjust the duty cycle of the pulse width modulation signal according to the change of the sampling voltage, so as to control the conduction time of the PMOS power tube and the NMOS power tube. 如請求項10所述的DCDC轉換器的軟啟動方法,其中,根據所述採樣電壓的變化調整所述脈寬調製信號的占空比,以控制所述PMOS功率管和NMOS功率管的導通時間時,包括以下步驟:比較所述採樣電壓與預設電壓,在所述NMOS功率管導通時,若所述採樣電壓大於預設電壓,則通過所述脈寬調製信號控制所述PMOS功率管導通,並控制所述PMOS功率管的導通時長小於等於預設時長。 The soft start method of the DCDC converter according to claim 10, wherein the duty cycle of the pulse width modulation signal is adjusted according to the change of the sampling voltage to control the conduction time of the PMOS power transistor and the NMOS power transistor , comprising the following steps: comparing the sampling voltage with a preset voltage, and when the NMOS power transistor is turned on, if the sampling voltage is greater than the preset voltage, controlling the PMOS power transistor to be turned on through the pulse width modulation signal , and control the conduction duration of the PMOS power transistor to be less than or equal to a preset duration. 如請求項11所述的DCDC轉換器的軟啟動方法,其中,根據所述採樣電壓的變化調整所述脈寬調製信號的占空比時,包括以下步驟:根據所述採樣電壓的大小獲取第一控制信號和第二控制信號;根據所述第一控制信號和第二控制信號形成所述脈寬調製信號。 The soft-start method of the DCDC converter according to claim 11, wherein when adjusting the duty ratio of the pulse width modulation signal according to the change of the sampling voltage, the following steps are included: obtaining the first step according to the magnitude of the sampling voltage A control signal and a second control signal; forming the pulse width modulation signal according to the first control signal and the second control signal. 如請求項12所述的DCDC轉換器的軟啟動方法,其中,根據所述採樣電壓的大小獲取第一控制信號時,包括以下步驟:獲取所述脈寬調製信號;在所述採樣電壓大於所述預設電壓時,若所述脈寬調製信號為高電平,則輸出置高的所述第一控制信號,若所述脈寬調製信號為低電平,則輸出置低的所述第一控制信號;和/或,在所述採樣電壓小於所述預設電壓時,比較單元輸出高電平,輸出置低的所述第一控制信號。 The soft start method of the DCDC converter according to claim 12, wherein, when acquiring the first control signal according to the magnitude of the sampling voltage, the following steps are included: acquiring the pulse width modulation signal; when the sampling voltage is greater than the When the preset voltage is used, if the pulse width modulation signal is at a high level, then output the first control signal that is set high, and if the pulse width modulation signal is at a low level, then output the first control signal that is set low A control signal; and/or, when the sampling voltage is lower than the preset voltage, the comparison unit outputs a high level, and outputs the first control signal which is set low. 如請求項12所述的DCDC轉換器的軟啟動方法,其中,根據所述採樣電壓的變化獲取第二控制信號時,包括以下步驟:提供充電電容,並提供充電電流對所述充電電容充電;在所述第一控制信號置高時,切斷所述充電電流與所述充電電容的連接,並控制所述充電電容放電;獲取所述充電電容的端電壓,在所述端電壓高於一翻轉閾值時,輸出置高的所述第二控制信號,否則輸出置低的所述第二控制信號。 The soft start method of the DCDC converter according to claim 12, wherein when acquiring the second control signal according to the change of the sampling voltage, the following steps are included: providing a charging capacitor, and providing a charging current to charge the charging capacitor; When the first control signal is set high, cut off the connection between the charging current and the charging capacitor, and control the charging capacitor to discharge; obtain the terminal voltage of the charging capacitor, when the terminal voltage is higher than a When the threshold value is reversed, output the second control signal that is set high, otherwise output the second control signal that is set low. 如請求項14所述的DCDC轉換器的軟啟動方法,其中,根據所述採樣電壓的變化獲取第二控制信號時,還包括以下步驟: 通過改變充電電容、充電電流以及所述翻轉閾值調整所述第二控制信號的置高時長。 The soft-start method of the DCDC converter according to claim 14, wherein when obtaining the second control signal according to the change of the sampling voltage, the following steps are further included: Adjusting the high duration of the second control signal by changing the charging capacitance, charging current and the flipping threshold. 如請求項12所述的DCDC轉換器的軟啟動方法,其中,採用RS鎖存器處理所述第一控制信號和第二控制信號,以獲取所述脈寬調製信號。 The soft start method for a DCDC converter according to claim 12, wherein an RS latch is used to process the first control signal and the second control signal to obtain the pulse width modulation signal. 一種電子設備,其特徵在於,包括如請求項1至9中任一項所述的DCDC轉換器。 An electronic device, characterized by comprising the DCDC converter according to any one of claims 1 to 9.
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