以下，針對本揭示之實施型態，根據圖面予以說明。另外，在以下之各實施型態彼此中，對彼此相同或均等之部分賦予相同符號進行說明。
(第1實施型態)
針對第1實施型態之壓電元件1，一面參照圖1及圖2一面予以說明。另外，本實施型態之壓電元件1適合例如利用於傳聲器。再者，圖1相當於沿著圖2中之I-I線的剖面圖。另外，在圖2中，省略表示後述第1電極部71及第2電極部72等。再者，即使在對應於圖2之各圖中，適當省略表示第1電極部71及第2電極部72等。
本實施型態之壓電元件1具備支持體10和振動部20。支持體10具有支持基板11和被形成在支持基板11上之絕緣膜12。另外，支持基板11係由例如矽基板構成，絕緣膜12係由氧化膜等構成。
振動部20係構成輸出因應音壓等之壓力的壓力檢測訊號的感測部30，被配置在支持體10上。而且，在支持體10形成用以使振動部20中之內緣側浮動的凹部10a。因此，振動部20成為具有被配置在支持體10上之支持區域21a，和與支持區域21a連接同時在凹部10a上浮動的浮動區域21b的構成。另外，凹部10a係振動部20側之開口端(在以下中，也單稱為凹部10a之開口端)之形狀被設為平面矩形狀。因此，浮動區域21b被設為平面略矩形狀。
而且，本實施型態之浮動區域21b係以構成4個振動區域22之方式，藉由分離縫隙41，和應力增加用縫隙42而被分割。在本實施型態中，分離用縫隙41係通過浮動區域21b之略中心，以朝向浮動區域21b之相對的角部延伸設置之方式，形成兩條。但是，本實施型態之分離用縫隙41在浮動區域21b內終端。而且，於後具體地描述浮動區域21b，但是應力增加用縫隙42與分離用縫隙41連結，同時被延伸設置至浮動區域中之支持區域21a側之端部，被分割成4個振動區域22。另外，雖然不特別限定，但是在本實施型態中，各振動區域22彼此之間隔(即是，分離用縫隙41之寬度)被設為1μm程度。
而且，因各振動區域22如上述般地浮動區域21b被分割而構成，各者的一端部22a被設為支持於支持體10(即是，支持區域21a)，另一端部22b端設為自由端。即是，各振動區域22成為與支持區域21a連接之狀態，同時成為被懸臂支持的狀態。另外，在各振動區域22中之一端部22a係在相對於振動部20之面方向的法線方向(在以下中，也簡稱為法線方向)中，與凹部10a之開口端一致的部分，與支持區域21a成為邊界的部分。因此，各振動區域22中之一端部22a之形狀成為依存於凹部10a之開口端的形狀。
振動部20被設為具有壓電膜50及與壓電膜50連接的電極膜60的構成。具體而言，壓電膜50具有下層壓電膜51和被疊層於下層壓電膜51上之上層壓電膜52。再者，電極膜60具有被配置在下層壓電膜51之下方的下層電極膜61、被配置在下層壓電膜51和上層壓電膜52之間的中間電極膜62，及上層壓電膜52上的上層電極膜63。即是，振動部20係下層壓電膜51藉由下層電極膜61和中間電極膜62夾入，上層電壓膜52成為藉由中間電極膜62和上層電極膜63被夾入的狀態。另外，壓電膜50係藉由濺鍍法等被形成。
再者，各振動區域22係固定端側被設為第1區域R1，自由端側被設為第2區域R2。而且，下層電極膜61、中間電極膜62、上層電極膜63分別被形成在第1區域R1及第2區域R2。但是，被形成在第1區域R1之下層電極膜61、中間電極膜62、上層電極膜63、被形成在第2區域R2之下層電極膜61、中間電極膜62、上層電極膜63分離，成為被絕緣的狀態。再者，被形成在第1區域R1之下層電極膜61、中間電極膜62、上層電極膜63係適當地被延伸設置至支持區域21a。
在振動部20之支持區域21a，形成與被形成在第1區域R1的下層電極膜61及上層電極膜63電性連接的第1電極部71，和與被形成在第1區域R1的中間電極膜62電性連接的第2電極部72。另外，圖1為沿著圖2中之I-I線的剖面圖，表示紙張左側之振動區域22和紙張右側之振動區域22不同的剖面。而且，在支持區域21a，分別形成與被形成在第1區域R1的下層電極膜61及上層電極膜63電性連接的第1電極部71，和與被形成在第1區域R1的中間電極膜62電性連接的第2電極部72。
第1電極部71具有被形成在貫通上層電極膜63、上層壓電膜52、下層壓電膜51而使下層電極膜61露出之孔部71a，與下層電極膜61及上層電極膜63電性連接的貫通電極71b。再者，第1電極部71具有被形成在貫通電極71b上而與貫通電極71b電性連接的墊部71c。第2電極部72具有被形成在貫通上層壓電膜52而使中間電極膜62露出的孔部72a，與中間電極膜62電性連接的貫通電極72b。再者，第2電極部72具有被形成在貫通電極72b上而與貫通電極72b電性連接的墊部72c。
另外，本實施型態之感測部30被構成將4個振動區域22中之電荷的變化當作一個壓力檢測訊號而予以輸出。即是，4個振動區域22被電性串聯連接。更詳細而言，各振動區域22被設為雙壓電晶片構造，被形成在各振動區域22之各下層電極膜61、各中間電極膜62、各上層電極膜63分別被並聯連接，並且各振動區域22間被串聯連接。
再者，被形成在第2區域R2之下層電極膜61、中間電極膜62及上層電極膜63不與各電極部71、72電性連接，成為浮動狀態。因此，不一定需要被形成在第2區域R2的下層電極膜61、中間電極膜62及上層電極膜63，在本實施型態中，係為了保護下層壓電膜51及上層壓電膜52之中的位於第2區域R2之部分而設置。
而且，在本實施型態中，下層壓電膜51及上層壓電膜52係使用氮化鋁鈧(ScAlN)或氮化鋁(AlN)等之無鉛之壓電陶瓷等而構成。下層電極膜61、中間電極膜62、上層電極膜63、第1電極部71及第2電極部72等係使用鉬、銅、鉑、白金、鈦等而構成。
以上為本實施型態中之壓電元件1之基本構成。如此之壓電元件1係當音壓被施加於各振動區域22(即是，感測部30)時，各振動區域22振動。在此情況，例如，在振動區域22之另一端部22b側(即是，自由端側)位於至上方之情況，下層壓電膜51產生拉伸應力，上層壓電膜52產生壓縮應力。因此，藉由從第1電極部71及第2電極部72取出該電荷，檢測音壓。
此時，產生在振動區域22(即是，壓電膜50)之應力在自由端側(即是，另一端部側)，應力被解放，固定端側大於自由端側邊。即是，自由端側係電荷之產生變少，訊號和雜訊的比，即SN比容易變小。因此，在本實施型態之壓電元件1中，如上述般，各振動區域22被分為應力容易變大的第1區域R1，和應力容易變小的第2區域R2。而且，在壓電元件1中，被配置在第1區域R1之下層電極膜61、上層電極膜63、中間電極膜62與第1、第2電極部71、72連接，產生位於第1區域R1的下層壓電膜51及上層壓電膜52的電荷被取出。依此，可以抑制雜訊之影響變大。
而且，在本實施型態中，於各振動區域22形成被施加音壓之時，促進位於第1區域R1之壓電膜50之變形的變形促進構造。另外，在本實施型態中，變形促進構造相當於提升部。
在本實施型態中，於各振動區域22形成用以增大被施加音壓之時產生在第1區域R1之應力的應力增加用縫隙42。具體而言，應力增加用縫隙42係被形成在第1區域R1與分離用縫隙41連結，同時以在與分離用縫隙41之連結部構成角部C1。因此，振動區域22係成為在從第1區域R1之中的支持體10浮動之部分形成角部C1之狀態，應力容易集中於角部C1，並且容易增加應力。依此，振動區域22會產生在一端部22a側的應力變大，全體之變形變大。因此，藉由壓電膜50之變形變大，可以謀求壓力檢測訊號之增加，可以謀求檢測靈敏度之提升。另外，被構成分離用縫隙41和應力增加用縫隙42之連結部分的角部C1即使分離用縫隙41和應力增加用縫隙42之間構成的角度被設為銳角亦可，即使被設為鈍角亦可，即使被設為直角亦可。
在上述說明的本實施型態中，振動區域22在第1區域R1中的從支持體10浮動的部分形成角部C1。而且，在該角部C1中，應力容易集中，同時應力容易增加。因此，可以促進在振動區域22中之第1區域R1之變形，可以謀求壓電檢測訊號之增加。因此，可以謀求檢測靈敏度之提升，可以謀求檢測精度之提升。
然而，在如上述般被懸臂支撐的振動區域22中，被支持於支持體10之一端部22a被支持於該支持體10而被拘束。因此，產生在振動區域22之應力係比起一端部22a稍微往內緣側偏離的部分之區域比較容易變大。但是，如上述般藉由在振動區域22形成角部C1，亦可以使應力成為最大的部分朝一端部22a側偏離。因此，即使針對該點，在本實施型態中，可以使振動區域22之全體之變形變大，可以謀求檢測靈敏度之提升。
(第1實施形態之變形例)
針對上述第1實施型態之變形例予以說明。在上述第1實施型態中，應力增加用縫隙42即使如圖3所示般，以沿著分離用縫隙41之延伸設置方向被延伸設置，並且僅在應力增加用縫隙42構成角部C1之方式，設為被曲折的形狀亦可。即是，即使應力增加用縫隙42被設為所謂的波形狀亦可。
再者，即使應力增加用縫隙42在由於在該應力增加用縫隙42被構成的角部C1產生的應力過大，而有可能破壞振動部20的情況，被設為角部C1具有曲率的彎曲形狀亦可。
(第2實施型態)
針對第2實施型態進行說明。本實施型態相對於第1實施型態，係變更變形促進構造之構成。關於其他，因與第1實施型態相同，故在此省略說明。
在本實施型態中，如圖4所示般，在振動區域22，不形成應力增加用縫隙42，被形成分離用縫隙41到達至浮動區域21b之角部。即是，本實施型態之浮動區域21b僅藉由分離用縫隙41，被分割成4個振動區域22。而且，在各振動區域22於一端部22a形成角部C2。另外，在本實施型態中，角部C2相當於變形促進構造。
具體而言，在本實施型態中，在支持體10中之凹部10a的開口端係在位於振動區域22之一端部22a之中的兩端部之間的部分，形成使該開口端朝支持體10之外緣側下凹的凹陷部10b。另外，振動區域22之一端部22a中之兩端部，換言之，指一端部22a之中之分離用縫隙41到達的部分。
而且，凹部10a之開口端係成為在沿著該開口端之方向，藉由凹陷部10b形成凹凸構成的狀態。依此，因振動區域22之一端部22a成為構成依存於凹部10a之開口端之形狀的凹凸構造的狀態，成為形成有角部C2之狀態。
在上述說明的本實施型態中，因振動區域22係在一端部22a構成角部C2，該一端部22a之應力變大。因此，可以促進在振動區域22中之一端部22a之角部C2附近之變形，可以謀求壓電檢測訊號之增加。因此，可以謀求靈敏度之提升。
(第2實施形態之變形例)
針對上述第2實施型態之變形例予以說明。在上述第2實施型態中，角部C2即使藉由在凹部10a之開口端，藉由形成使該開口端突出至支持體10之內緣側之凸部而被構成亦可。即是，上述第2實施型態若為在作為振動區域22之中之第1區域R1的一端部22a形成角部C2時，則能夠適當地變更凹部10a之開口端側的形狀。
再者，即使在第2實施型態中，如上述第1實施型態之變形例般，在由於在該角部C2產生的應力過大，而有可能破壞振動部20的情況，被設為角部C2具有曲率的彎曲形狀亦可。
(第3實施型態)
針對第3實施型態進行說明。本實施型態相對於第1實施型態，係變更變形促進構造之構成。關於其他，因與第1實施型態相同，故在此省略說明。
在本實施型態中，如圖5所示般，被形成在支持體10之凹部10a之開口端，被設為以兩個分離用縫隙41之交叉點為中心的平面圓形狀。再者，凹部10a之開口端係在法線方向中，被形成與在應力增加用縫隙42之延伸設置方向中之兩端部交叉。
因此，在振動區域22之中的浮動的區域之外形線中之支持區域21a側之兩個端部成為到達至一端部22a的狀態。而且，振動區域22成為相對於連結兩個端部彼此之間的假想線K1，具有一端部22a朝與另一端部22b相反側膨脹之部分的形狀。在本實施型態中，因凹部10a之開口端被設為平面圓形狀，故振動區域22之一端部22a被設為圓弧狀。因此，本實施型態之各振動區域22係如上述第1實施型態般，凹部10a之開口端被設為矩形狀，比起一端部22a與假想線K1一致的情況，第1區域R1變大。
另外，振動區域22之外形線係指構成振動區域22之外形的端部之線。而且，振動區域22之中的浮動區域之外形線係指振動區域22之外形線之中除去被支持於支持體10之一端部22a的部分之線。再者，在本實施型態中，一端部22a之形狀相當於變形促進構造。
以上說明的本實施型態中，因振動區域22被設為具有一端部22a較假想線K1朝與另一端部22b相反側膨脹之部分的形狀，故比起將凹部10a之開口端設為矩形狀的情況，可以增大第1區域R1。而且，如上述般，因振動區域22係較一端部22a更稍微內側的部分之變形容易變大，故假想線K1附近之變形也可以增大。即是，也可以增大凹部10a之開口端被設為矩形狀之情況的成為一端部22a之部分的變形。因此，可以謀求壓力檢測訊號之增加，可以謀求靈敏度之提升。
(第4實施型態)
針對第4實施型態進行說明。本實施型態相對於第3實施型態，係變更變形促進構造之構成。關於其他，因與第3實施型態相同，故在此省略說明。
在本實施型態中，如圖6所示般，在振動部20不形成應力增加用縫隙42。而且，被形成在支持體10之凹部10a之開口端，被設為以兩個分離用縫隙41之交叉點為中心的平面圓形狀。但是，在本實施型態中，凹部10a之開口端被形成不與分離用縫隙41交叉。
即是，在振動區域22之中的浮動的區域之外形線中之支持區域21a側之兩個端部分別成為在浮動的區域終端的狀態。因此，在本實施型態中，各振動區域22成為一端部22a側之部分彼此連接之狀態。
而且，振動區域22成為相對於連結兩個端部彼此之間的假想線K2，具有一端部22a朝與另一端部22b相反側膨脹之部分的形狀。因此，本實施型態之各振動區域22係如上述第1實施型態般，凹部10a之開口端被設為矩形狀，比起一端部與假想線K2一致的情況，第1區域R1變大。另外，在本實施型態中，一端部22a之形狀相當於變形促進構造。
以上說明的本實施型態中，因振動區域22被設為具有一端部22a較假想線K2朝與另一端部22b相反側膨脹之部分的形狀，故比起將凹部10a之開口端設為矩形狀的情況，可以增大第1區域R1。因此，可以取得與上述第3實施型態相同的效果。
(第5實施型態)
針對第5實施型態進行說明。本實施型態相對於第1實施型態，係變更變形促進構造之構成。關於其他，因與第1實施型態相同，故在此省略說明。
在本實施型態中，如圖7所示般，在第2區域R2，形成貫通上層電極膜63、上層壓電膜52、中間電極膜62及下層壓電膜51而到達至下層電極膜61之孔部81。而且，在孔部81被埋入比起壓電膜50楊氏係數更高的硬膜82。
在本實施型態中，硬膜82係由與第1、第2電極部71、72或電極膜60相同的材料而構成。另外，因被形成在第2區域R2之下層電極膜61、中間電極膜62、上層電極膜63不與第1、第2電極部71、72電性連接，故即使該些彼此被連接也不會有問題。而且，在本實施型態中，硬膜82相當於變形促進構造。
再者，在本實施型態中，孔部81及硬膜82係在第2區域R2中，被形成比起第1區域R1側，另一端部22b側較密集。更詳細而言，在本實施型態中，硬膜82係在第2區域R2中，被形成從第1區域R1側朝向另一端部22b側逐漸變密集。
如上述說明般，在本實施型態中，在第2區域R2配置硬膜82。因此，比起不在第2區域R2配置硬膜82之情況，在音壓被施加之時，由於第2區域R2變硬，第2區域R2難變形。因此，在本實施型態中，應力容易集中於第1區域R1，第1區域R1容易變形。依此，可以謀求壓力檢測訊號之增加，可以謀求明靈敏度之提升。
再者，在本實施型態中，硬膜82被形成另一端部22b側較第2區域R2側之中的第1區域R1側更密集。因此，例如比起硬膜82被形成另一端部22b側較第2區域R2側之中的第1區域R1側更疏之情況，可以藉由硬膜82阻礙第1區域R1之變形。因此，可以容易取得配置硬膜82所產生的效果。
而且，硬膜82係由與第1、第2電極部71、72或電極膜60相同的材料構成。因此，例如可以在形成第1、第2貫通電極71b、72b之時同時形成硬膜82，並可以謀求製造工程之簡化。
(第6實施型態)
針對第6實施型態予以說明。本實施型態相對於第1實施型態在各振動區域22具備溫度檢測元件及發熱元件。關於其他，因與第1實施型態相同，在此省略說明。
首先，上述般的壓電元件1有在曝露於外氣之狀態或被曝露於特定的油之狀態下被使用的情形。在此情況下，在使用環境為低溫的情況，由於曝露於外氣，導致振動區域22凍結，或與振動區域22接觸之油的黏性下降等，依此有可以阻礙振動區域22之振動。即是，上述般之壓電元件1係在使用環境為低溫的情況，檢測靈敏度有可能下降。
因此，在本實施型態中，如圖8所示般，在各振動區域22，形成輸出因應溫度之溫度檢測訊號的溫度檢測元件91，及藉由被通電而發熱的發熱元件92。在本實施型態中，在各振動區域22，於第2區域R2形成溫度檢測元件91及發熱元件92。更詳細而言，在本實施型態中，在第2區域R2不形成中間電極膜62。而且，溫度檢測元件91及發熱元件92被形成在位於下層壓電膜51和上層壓電膜52之間的部分。即是，溫度檢測元件91及發熱元件92被形成在形成有上述第1實施型態中之中間電極膜62的部分上。
再者，雖然未特別圖示，但是在第1區域R1及支持區域21a形成有與溫度檢測元件91及發熱元件92電性連接的拉出配線。而且，支持區域21a形成與該拉出配線電性連接的電極部。依此，謀求溫度檢測元件91及發熱元件92和外部電路的連接。
另外，在第2區域R2中，下層電極膜61及上層電極膜63與上述第1實施型態相同，被形成挾持壓電膜50。再者，溫度檢測元件91係使用電阻值因應溫度而變化的感溫電阻體而構成，發熱元件92係使用藉由通電而發熱的發熱電阻體而構成。在本實施型態中，溫度檢測元件91及發熱元件92係藉由例如鉑而構成。再者，在本實施型態中，溫度檢測元件91及發熱元件92相當於提升部。
在以上說明的本實施型態中，形成溫度檢測元件91及發熱元件92。因此，藉由設為根據以溫度檢測元件91被檢測出的溫度調整對發熱元件92的通電量，可以將振動區域22之溫度維持在特定溫度。因此，可以抑制振動區域22凍結，或與振動區域22接觸的油之黏性下降之情形等，並可以抑制檢測靈敏度下降之情形。即是，可以抑制檢測精度下降之情形。
再者，溫度檢測元件91及發熱元件92被形成在第2區域R2。因此，比起在第1區域R1形成溫度檢測元件91及發熱元件92的情況，可以抑制配置用以取出電荷的中間電極膜62之部分減少，並且有效地利用第2區域R2。
而且，溫度檢測元件91及發熱元件92被形成在位於下層壓電膜51和上層壓電膜52之間，不曝露於外氣。因此，可以謀求溫度檢測元件91及發熱元件92之耐環境性的提升。
而且，溫度檢測元件91及發熱元件92係被形成在下層壓電膜51和上層壓電膜52之間，下層電極膜61及上層電極膜63與第1實施型態相同，被形成挾持壓電膜50。因此，也可以相對於壓電膜50的耐環境性下降。
(第7實施型態)
針對第7實施型態予以說明。本實施型態相對於第1實施型態，設為形成複數感測部30。關於其他，因與第1實施型態相同，在此省略說明。
首先，上述般的壓電元件1有可能音壓經由區劃各振動22之部分(即是，分離用縫隙41或應力增加用縫隙42)而洩漏，與聲阻抗並行進入的分離用縫隙41之聲阻容易變小。而且，因藉由聲阻變小，低頻衰減頻率增大，故在低頻的靈敏度容易變小。
因此，在本實施型態中，如圖9所示般，壓電元件1係被構成複數感測部30(即是，浮動區域21b)被一體化。具體而言，在本實施型態之支持體10，形成4個用以使振動部20中之內緣側浮動的凹部10a。即是，在本實施型態之振動部20形成4個浮動區域21b。而且，各浮動區域21b之各者係藉由分別形成分離用縫隙41，而被分離成4個振動區域22。
另外，在本實施型態中，不形成應力增加用縫隙42。即是，在本實施型態中，被形成分離用縫隙41到達至浮動區域21b之角部。
而且，在本實施型態中，在各感測器30中之各者的振動區域22被構成共振頻率不同。在本實施型態中，在各感測部30中的各者振動區域22被形成一端部22a和另一端部22b之間的長度，即是樑之長度不同。 因此，如圖10所示般，各感測部30之頻率和靈敏度之關係成為在每感測部30不同的波形。另外，在本實施型態中，共振頻率不同的振動區域22之構成相當於提升部。
在以上說明的本實施型態中，壓電元件1形成複數感測部30而被構成。而且，因各感測部30被設為共振頻率不同的值，故成為頻率和靈敏度之關係各自不同的波形。因此，若藉由本實施型態之壓電元件1時，藉由適當地切換用於音壓之檢測的振動區域22，可以使檢測靈敏度變高的頻率成為寬頻，亦可以提升例如道路噪音等之低頻噪音之檢測靈敏度。
再者，本實施型態之壓電元件1係形成複數感測部30，複數感測部30被支持於共同的支持體10而被構成。因此，例如與配置複數形成有一個感測部30之壓電元件1之情況相比較，容易縮窄相鄰的感測部30之間隔。在此，例如，在20kHz之音波中，波長成為約17mm。因此，如本實施型態般，藉由成為複數感測部30被支持於共同的支持體10之狀態，即使在比波長窄很多的間隔亦容易配置各感測器30。因此，可以抑制在各感測部30之間，音壓衰減之情形，亦可以抑制容易衰減之高頻區域之音壓的檢測靈敏度下降之情形。
並且，各振動區域22係藉由設為一端部22a和另一端部22b之間的長度不同，而成為共振頻率不同的值。在此，各振動區域22係藉由浮動區域21b被蝕刻等而被構成。在此情況，一端部22a和另一端部22b之間的長度，能藉由變更蝕刻等之遮罩而容易變更。因此，若藉由本實施型態時，可以邊抑制製造工程複雜化，且容易形成具有不同的共振頻率之複數振動區域22。
(第8實施型態)
針對第8實施型態予以說明。本實施型態相對於第1實施型態，為在支持體10之凹部10a配置保護膜者。關於其他，因與第1實施型態相同，在此省略說明。
首先，上述般的壓電元件1係被形成在支持體10之凹部10a藉由蝕刻而被形成。例如，凹部10a係藉由重複對支持體10進行濕蝕刻的工程、形成保護濕蝕刻之壁的面保護膜之工程、進一步挖掘濕蝕刻後的壁面的乾蝕刻之工程等而被形成。此情況，凹部10a容易成為在側面形成為微細的凹凸之狀態。因此，在上述般之壓電元件1中，藉由被形成在凹部10a之側面的微細的凹凸，有可能由於產生亂流而使檢測靈敏度下降。
因此，在本實施型態中，如圖11所示般，在支持體10形成有保護膜100，該保護膜100係於成為凹部10a之側面10c的部分，埋入微細的凹凸，並且與凹部10a相反側的露出面100a較凹部10a之側面10c更被平坦化。再者，在本實施型態中，保護膜100也被形成在各振動區域22中之支持體10側的部分，及在各振動區域22中之相鄰的振動區域22相向的部分。
保護膜100係在本實施型態中，以水滴或油滴等之異物難附著之方式，使用具有撥水性及撥油性之材料而被構成，例如由以氟聚合物等而被構成。而且，保護膜100係藉由塗佈法、浸漬法、蒸鍍法等被配置在包含凹部10a之側面10c的部分。依此，保護膜100係在露出面100a較凹部10a之側面10c更平坦化的狀態被配置。
再者，保護膜100以使用難阻礙振動區域22之振動的材料而被構成為佳。例如，以氮化鋁鈧構成壓電膜50之情況，楊氏係數成為250GPa左右。因此，保護膜100以使用約1/500以下之楊氏係數為佳，以使用0.1～0.5GPa左右之楊氏係數者為佳。
在上述說明的本實施型態中，在支持體10配置保護膜100，保護膜係在凹部10a之側面10c，露出面10a較凹部10a之側面10c更被平坦化。因此，可以抑制在凹部10a內產生亂流之情形，且可以抑制檢測精度下降之情形。
再者，保護膜100也被形成在振動區域22，由具有撥水性及撥油性的材料被構成。因此，可以抑制在保護膜100附著水等的異物，亦可以抑制藉由該異物產生亂流的情形。
並且，保護膜100係由難阻礙振動區域22之振動的材料而構成。因此，藉由配置保護膜100，可以抑制振動區域22難振動之情形，且可以抑制檢測靈敏度下降。
(第9實施型態)
針對第9實施型態予以說明。本實施型態相對於第1實施型態，係變更支持體10之形狀。關於其他，因與第1實施型態相同，在此省略說明。
在本實施型態中，支持基板11係如上述般由矽基板構成，具有絕緣膜12側之一面11a及一面11a相反側的另一面11b。而且，支持基板11係如圖12所示般，被設為構成凹部10a之側面11c凹陷的構成。另外，在本實施型態中，側面11c之凹陷構造相當於提升部。
具體而言，支持基板11之側面11c被設為以下之構成。首先，將與絕緣膜12相反側的開口部設為第1開口部11d，將絕緣膜12側之開口部設為第2開口部11e。在此情況，側面11c被構成側面從第1開口部11d朝向第2開口部11e側被削除的第1斜錐部11f、側面從第2開口部11e朝向第1開口部11d側被削除的第2斜錐部11g連接的構成。即是，支持基板11之側面11c相對於連結第1開口部11d和第2開口部11e的假想線K3，被設為第1開口部11d和第2開口部11e之間的部分凹陷的凹陷構造。
在本實施型態中，支持基板11係一面11a及另一面11b被設為(100)面，第1開口部11d及第2開口部11e被設為矩形狀。而且，第1斜錐部11f及第2斜錐部11g分別被設為(111)面。
另外，本實施型態之壓電元件1係如上述第7實施型態般，未形成應力增加用縫隙42。即是，在本實施型態中，被形成分離用縫隙41到達至浮動區域21b之角部。再者，在後述的各實施型態中，說明未形成應力增加用縫隙42的例。但是，即使在本實施型態及後述的各實施型態，適當地形成應力增加用縫隙42亦可。
以上為本實施型態中之壓電元件1之構成。接著，針對上述壓電元件1之製造方法，邊參照圖13A及圖13B邊予以說明。
首先，如圖13A所示般，準備在支持基板11上配置絕緣膜12，在絕緣膜12上形成壓電膜50、電極膜60、第1電極部71、第2電極部72等者。另外，支持基板11係由矽基板構成，一面11a及另一面11b被設為(100)面。再者，壓電膜50、電極膜60、第1電極部71、第2電極部72等係藉由適當地進行一般的濺鍍法或蝕刻法等而構成。
而且，使用無圖示的遮罩，以從支持基板11之另一面11b貫通絕緣膜12之方式，進行各向異性乾蝕刻。另外，在該工程結束之後，支持基板11之側面11c係連結第1開口部11d和第2開口部11e之假想線K3一致。
接著，如圖13B所示般，藉由使用無圖示之遮罩，對支持基板11之側面11c進行各向異性濕蝕刻，在支持基板11之側面11c形成凹陷構造。詳細而言，支持基板11係由矽基板構成，一面11a及另一面11b被設為(100)面。因此，藉由進行各向異性濕蝕刻，形成以在矽之面方位之中蝕刻率最慢(110)面構成的第1斜錐部11f及第2斜錐部11g。
之後，雖然無特別圖示，但是藉由適當形成分離用縫隙41，製造圖12所示的壓電元件1。
但是，如上述般之壓電元件1係如圖14所示般，被收容在殼體130而構成壓電裝置。具體而言，殼體130具有搭載壓電元件1及進行定訊號處理等之電路基板120的印刷基板131，和以收容壓電元件1及電路基板120之方式被固定於印刷基板131的蓋部132。另外，在本實施型態中，印刷基板131相當於被安裝構件。
印刷基板131雖然無特別圖示，但是被設為適當地形成配線部或通孔電極的構成，因應所需，也搭載無圖示之電容器等的電子零件等。壓電元件1係經由黏著劑等之接合構件2係在印刷基板131之一面131a搭載支持基板11之另一面11b。電路基板120係經由以導電構件構成的接合構件121被搭載於印刷基板131之一面131a。而且，壓電元件1之墊部72c和電路基板120經由接合導線133而被電性連接。另外，壓電元件1之墊部71c係在與圖14不同的剖面經由接合導線133而與電路基板120電性連接。蓋部132係由金屬、塑膠、樹脂等構成，以收容壓電元件1及電路基板120之方式，經由無圖示之黏接劑等之接合構件而被固定於印刷基板131。而且，在本實施型態中，於與蓋部132之中的與感測部30相向之部分形成貫通孔132a。
在如此的壓電裝置中，藉由音壓(即是，壓力)從貫通孔132a通過感測部30和蓋部132之間的空間被施加至感測部30，檢測音壓。
若藉由上述說明的本實施型態時，支持基板11被設為凹陷構造。因此，在構成圖14所示的壓電裝置之情況，可以謀求檢測精度之提升。
即是，在殼體130中，將形成導入音壓的貫通孔132a之部分和感測部30之間的空間設為受壓面空間S1。再者，包含挾持感測部30而位於與受壓面空間S1相反側的空間，將不隔著分離用縫隙41而與該空間連續的空間設為背面空間S2。另外，背面空間S2係在殼體130內之空間，可以也稱為與受壓面空間S1不同的空間，可以也稱為除了受壓面空間S1的空間。進一步換言之，受壓面空間S1也可以稱為振動區域22中之影響推壓被形成在殼體130之貫通孔132a側之面的空間。背面空間S2也稱為振動區域22之影響推壓與被形成在殼體130之貫通孔132a側相反側之面的空間。
在此情況，在如此之壓電裝置中之低頻衰減頻率係將分離用縫隙41所致的聲阻(即是，空氣阻力)設為Rg，將背面空間S2之聲音順性設為Cb時，以1/(2π×Rg×Cb)表示。因此，為了縮小低頻衰減頻率，若增大聲阻Rg或背面空間S2之聲音順性Cb即可。
而且，在本實施型態中，因在支持基板11形成凹陷構造，故藉由增大背面空間S2之空間，可以增大聲音順性。因此，在本實施型態之壓電裝置中，藉由縮小低頻衰減頻率，可以謀求提升在低頻帶的檢測靈敏度，並可以謀求檢測精度之提升。
再者，在如此的壓電裝置中之靈敏度係將壓電元件1之聲音順性設為Cm，將背面空間S2之聲音順性設為Cb時，以1/{(1/Cm)+(1/Cb)}表示。因此，為了增大靈敏度，若增大聲音順性Cb即可，聲音順性Cb係與背面空間S2之空間的大小呈比例。
而且，在本實施型態中，因在支持基板11形成凹陷構造，故藉由增大背面空間S2之空間，可以增大電容。因此，在本實施型態之壓電裝置中，藉由增大靈敏度可以謀求檢測精度之提升。
具體而言，如圖15所示般，藉由增大背面空間S2之聲音順性Cb，可以抑制靈敏度下降。在此情況，雖然靈敏度係Cb/Cm為2以下時，陡峭下降，但是可以藉由形成凹陷構造，使靈敏度之下降緩和。即是，如此在支持基板11形成凹陷構造，尤其對Cb/Cm為2以下之壓電裝置特別有效。另外，圖15係以Cb/Cm極大之情況為基準。
再者，支持基板11被設為側面11c具有第1斜錐部11f和第2斜錐部11g的構成。因此，例如與側面11c僅由第2斜錐部11g構成之情況相比較，可以提升支持基板11之另一面11b和印刷基板131之黏接面積。即是，若藉由本實施型態時，可以抑制相對於印刷基板131之黏接性下降之情形，且謀求檢測精度之提升。另外，側面11c僅由第2斜錐部11g構成，換言之，指第2斜錐部11g被形成至第1開口部11d的構成。
再者，支持基板11之側面11c係由各向異性濕蝕刻構成而設為(111)面，抑制形狀偏差之情形。因此，可以抑制產生在振動區域22之應力偏差的情形，可以抑制檢測精度偏差之情形。
另外，在本實施型態中，雖然說明第1開口部11d及第2開口部11e為矩形狀，但是第1開口部11d及第2開口部11e之形狀能夠適當變更。例如，即使支持基板11之一面11a及另一面11b被設為(110)面，第1開口部11d及第2開口部11e被設為八角形狀亦可。
(第10實施型態)
針對第10實施型態予以說明。本實施型態相對於第9實施型態，係變更壓電裝置中之壓電元件1之配置的方式。關於其他，因與第9實施型態相同，在此省略說明。
在本實施型態中，壓電元件1係如圖16所示般，在上層壓電膜52上，形成8個墊部701～708而被構成。具體而言，兩個墊部被設為與感測部30電性連接之連接墊部701、702。另外，連接墊部701、702係相當於在上述第1實施型態中之墊部71c、72c者。剩下的6個墊部被設為不與感測部30電性連接之虛擬墊部703～708。
而且，8個墊部701～708係被配置成當從法線方向觀看時，相對於壓電元件1之中心成為對稱。即是，8個墊部701～708係以與支持基板11之一面11a之面方向平行的面之中心為基準，被配置成對稱。換言之，8個墊部701～708係於壓電元件1被搭載於印刷基板131之時，以與壓電元件1中之印刷基板131之面方向平行的面之中心為基準，被配置成對稱。再者，連接墊部701、702被配置成彼此接近。
以上為本實施型態中之壓電元件1之構成。而且，壓電裝置係如圖17所示般，壓電元件1被覆晶安裝於印刷基板131而被構成。具體而言，壓電元件1係經由以焊料等之印刷基板131之導電性構件構成的接合構件3而連接各墊部701～708。再者，壓電元件1係以連接墊部701、702位於電路基板120之側之方式，被配置在印刷基板131。而且，壓電元件1係經由連接墊部701、702被形成在印刷基板131的配線部131c而與電路基板120電性連接。
另外，本實施型態之配線部131c係以最短連結墊部701、702與電路基板120之方式形成。再者，在本實施型態中，各墊部701～708全部與印刷基板131電性連接。即是，各墊部701～708變成全部不會成為浮動狀態。
再者，在本實施型態中，在印刷基板131形成貫通孔131b。因此，在本實施型態中，藉由音壓通過貫通孔131b而被施加於感測部30，檢測音壓。因此，在本實施型態中，在殼體130內，形成貫通孔131b之部分和感測部30之間的空間成為受壓面空間S1，挾持感測部30而位於與受壓面空間S1相反側的空間成為背面空間S2。
再者，背面空間S2如上述般包含挾持感測部30而位於與受壓面空間S1的空間，也可以稱為將不隔著分離用縫隙41而與該空間連續的空間。因此，在圖17般之壓電裝置中，成為包含挾持感測部30而位於與受壓面空間S1相反側的空間，及不隔著分離用縫隙41而與該空間連續的壓電元件1之周圍之空間的空間。
若藉由上述說明的本實施型態時，藉由謀求寄生電容之降低，可以抑制檢測精度下降之情形。
即是，如圖18所示般，壓電裝置係將感測部30之全體的電容設為Co，將被構成在壓電元件1和電路基板120之間的寄生電容設為Cp時，成為在電容Co和電路基板120之間配置寄生電容Cp的構成。而且，在寄生電容Cp大之情況，從感測部30流至寄生電容Cp的電荷之比率變大，檢測精度下降。另外，寄生電容Cp係連接壓電元件1(即是，感測部30)和電路基板120的部分之電容，或產生在電路基板120之內部的電容等的和。
因此，本實施型態之壓電元件1係被覆晶安裝於印刷基板131，經由被形成在印刷基板131的配線部131c而與電路基板120連接。而且，壓電元件1係以連接墊部701、702成為電路基板120側之方式，被配置在印刷基板131。因此，與以接合導線133連接壓電元件1和電路基板120之情況相比較，容易縮短連接壓電元件1和電路基板120的配線部131c。因此，可以謀求寄生電容Cp之降低，抑制檢測精度下降之情形。
再者，在本實施型態中，將壓電元件1覆晶安裝於印刷基板131，在印刷基板131形成貫通孔131b。因此，與如上述第9實施型態般在蓋部132形成貫通孔132a之情況相比較，可以縮小受壓面空間S1，可以增大在受壓面空間S1中之空氣彈簧。因此，可以抑制從貫通孔132a被感應的音壓分散之情形，可以藉由謀求檢測精度之提升，而謀求檢測精度之提升。另外，在本實施型態中，如上述第9實施型態般，即使再蓋部132形成貫通孔132a亦可。即使如此之壓電裝置，也難以縮小受壓面空間S1，但是可以謀求寄生電容Cp之降低。
並且，在本實施型態中，墊部701～708相對於壓電元件1之中心被配置成對稱。因此，於覆晶安裝壓電元件1之時，可以抑制壓電元件1對印刷基板131傾斜之情形。
另外，因虛擬墊部703～708與感測部30連接，故即使以黏接劑等與印刷基板131接合亦可。但是，藉由以焊料等之接合構件3將虛擬墊部703～708連接於印刷基板131，也可以將虛擬墊部703～708維持在特定電位。因此，與虛擬墊部703～708成為浮動狀態之情況相比較，可以抑制產生不需要的雜訊。再者，藉由在各墊部701～708和印刷基板131之間配置相同材料，可以使壓電元件1難以傾斜。因此，以在虛擬墊部703～708和印刷基板131之間配置相同的接合構件3為佳。再者，即使藉由配置底部填料取代配置虛擬墊部703～708，抑制壓電元件1傾斜之情形亦可。
再者，本實施型態中，雖然也可以抑制壓電元件1傾斜之情形，但例如即使不配置虛擬墊部703～708等亦可。作為如此之壓電裝置，雖然壓電元件1容易傾斜，但是可以降低寄生電容Rp。
(第11實施型態)
針對第11實施型態予以說明。本實施型態相對於第1實施型態，係變更中間電極膜62之形狀。關於其他，因與第1實施型態相同，在此省略說明。
在本實施型態中，如圖19所示般，中間電極膜62被分割成被形成在第1區域R1的第1中間電極膜62a，和被形成在第2區域R2的第2中間電極膜62b。而且，第1中間電極膜62a進一步被分割成複數電荷區域620，和虛擬區域624、625。在本實施型態中，複數電荷區域620被設為3個電荷區域621～623。因此，壓電元件1在各振動區域22中，成為在複數電荷區域620，和與該電荷區域620相向的下層電極膜61及上層電極膜63之間分別構成電容之狀態。
另外，在圖19中，雖然表示位於振動區域22之中間電極膜62之形狀，但是也在支持區域21a適當地延伸設置中間電極膜62。再者，在本實施型態中，被分割成複數電荷區域621～623的中間電極膜62相當於提升部。
複數電荷區域621～623分別被設為相同的面積。即是，虛擬區域624、625被構成各電荷區域621～623成為相同的面積。而且，複數電荷區域621～623雖然無特別圖示，但是在位於支持區域21a上的部分，經由無圖示的配線等而彼此被串聯連接。因此，在各振動區域22中，成為複數電容被串聯連接的狀態。對此，虛擬區域624、625不與電荷區域621～623連接，成為浮動狀態。
再者，不特別圖示，但是下層電極膜61及上層電極膜63分別被形成與第1中間電極膜62a及第2中間電極膜62b相向。
若藉由上述說明的本實施型態時，第1中間電極膜62a被分割成複數電荷區域621～623。而且，複數電荷區域621～623被串聯連接。因此，在一個第1區域R1中，成為複數電容被串聯連接的狀態，藉由謀求電容的增加，可以謀求檢測靈敏度的提升。再者，複數電荷區域621～623被設為相同的面積。因此，被構成一個第1區域R1的複數電容彼此相等。因此，可以抑制在各電容間產生雜訊之情形，可以抑制檢測精度下降之情形。
另外，在本實施型態中，雖然針對將第1中間電極膜62a分割成3個電荷區域621～623之例予以說明，但是電荷區域621～623即使為兩個亦可，即使具備4個以上的複數亦可。
並且，在本實施型態中，雖然針對將第1中間電極膜62a分割成複數電荷區域621～623的例予以說明，但是即使將下層電極膜61及上層電極膜63分割成虛擬區域亦可。另外，即使將下層電極膜61及上層電極膜63分割成複數電荷區域和虛擬區域亦可以取得相同的效果。但是，如上述般中間電極膜62被配置在下層電極膜61和上層電極膜63之間，分割中間電極膜62之情況，因若僅分割中間電極膜62即可，故可以謀求構成之簡化。
(第11實施型態之變形例)
針對第11實施型態之變形例予以說明。在上述第11實施型態中，如圖20所示般，即使電荷區域621、623不被設為矩形狀亦可。即是，因虛擬區域624、625若與3個電荷區域621～623相等即可，所形成的位置或形狀能夠適當變更。並且，若3個電荷區域621～623之面積相等，即使不形成虛擬區域624、625亦可。
(第12實施型態)
針對第12實施型態予以說明。本實施型態相對於第1實施型態，係規定第1區域R1和第2區域R2之區劃的方式。關於其他，因與第1實施型態相同，在此省略說明。
首先，在上述般之壓電元1中，於音壓被施加於感測部30之時，成為圖21所示的應力分布。具體而言，應力係一端部22a側之中心部附近容易變得最高，朝向另一端部22b側逐漸變小。因此，在本實施型態中，如圖22所示般，第1區域R1和第2區域R2係根據應力分布而被區劃。
以下，針對本實施型態中之第1區域R1和第2區域R2之區劃的方式予以說明。另外，在本實施型態中之區劃的方式尤其在以電壓表示靈敏度輸出之情況有效。首先，為了提升壓電元件1中之靈敏度，若產生在第1區域R1之靜電能E增加即可。在此，如圖23所示般，將沿著振動區域22中之一端部22a的方向設為Y方向，將與Y方向正交的方向設為X方向。而且，在將振動區域22沿著X方向分割成複數的微小的假想區域M中，將假想區域M之電容設為C，將產生在假想區域M之應力的平均值設為σ。再者，靜電能E係將產生在假想區域M之電壓設為V時，以1/2×C×V2
表示。另外，產生電壓V與產生應力σ呈比例。
因此，在本實施型態中，如圖23及圖24所示般，算出各假想區域M之C×σ2
成為最大的區域，以連接各假想區域M之成為最大的區域的邊界線區劃第1區域R1和第2區域R2。在此情況，即使如圖24所示般，將連接算出值的算出線作為邊界線，而區劃第1區域和第2區域R2亦可，即使將根據算出線的近似線作為邊界線而區劃第1區域R1和第2區域R2亦可。
另外，本實施型態中，第1區域R1和第2區域R2之區劃的方式相當於提升部。再者，在圖24中，表示將沿著振動區域22中之一端部22a之Y方向的長度設為850μm，將從一端部22a至另一端部22b之長度設為425μm的例。在此情況，近似式以下述式1表示。
(式1)Y=-0.0011X2
+1.0387X-41.657
若藉由上述說明的本實施型態時，第1區域R1和第2區域R2被區劃成第1區域R1之靜電能E變高。因此，可以謀求檢測靈敏度之提升，可以謀求檢測精度之提升。
(第12實施型態之變形例)
針對第12實施型態之變形例予以說明。第1區域R1及第2區域R2即使如圖25般被分割亦可。即是，因振動區域22被設為平面三角形狀，故以將一端部22a分成三等份之方式，分割三角形，藉由連接3個三角形之各重心位置C，和一端部22a之兩端部之境界線，而分割第1區域R1和第2區域R2亦可。即使如此區劃第1區域R1和第2區域R2，亦包含在接近於上述第12實施型態之近似線的區域，區劃第1區域R1和第2區域R2而靜電能E變高的區域。因此，可以謀求檢測靈敏度之提升，可以謀求檢測精度之提升。
再者，在上述第12實施型態中，雖然針對振動區域22為平面三角形狀之例予以說明，但是振動區域22之形狀能夠適當變更。例如，振動區域22即使被設為平面矩形狀亦可，即使被設為平面扇狀亦可。作為該些般的振動區域22，即使以上述第12實施型態相同的方法區劃第1區域R1和第2區域R2，可以取得與上述第12實施型態相同的效果。
(第13實施型態)
針對第13實施型態予以說明。本實施型態相對於第12實施型態，係規定第1區域R1和第2區域R2之區劃的方式。關於其他，因與第12實施型態相同，在此省略說明。
以下，針對本實施型態中之第1區域R1和第2區域R2之區劃的方式予以說明。另外，在本實施型態中之區劃的方式尤其在以電荷表示靈敏度輸出之情況有效。本實施型態相對於上述第12實施型態，係將假想區域M之面積設為S，將產生在假想區域M的應力之和設為σsum。而且，1/2×C×V2
係與S×(σsum/S)2
呈比例。即是，1/2×C×V2
與每單位面積之產生應力呈比例。因此，在本實施型態中，如圖26及圖27所示般，算出各假想區域M之(σsum)2
/S成為最大的區域，以連接各假想區域M之成為最大的區域的邊界線區劃第1區域R1和第2區域R2。在此情況，即使如圖27所示般，將連接算出值的算出線作為邊界線，而區劃第1區域和第2區域R2亦可，即使將根據算出線的近似線作為邊界線而區劃第1區域R1和第2區域R2亦可。再者，在圖27中，表示將沿著振動區域22中之一端部22a之Y方向的長度設為850μm，將從一端部22a至另一端部22b之長度設為425μm的例。在此情況，近似式以下述式2表示。
(式2)Y=241.11
如此一來，即使根據每單位面積之產生應力，區劃第1區域R1和第2區域R2，亦可以取得與上述第12實施型態相同的效果。
(第14實施型態)
針對第14實施型態予以說明。本實施型態相對於第1實施型態係使各振動區域22翹曲且並聯連接者。關於其他，因與第1實施型態相同，在此省略說明。
在本實施型態中，如圖28所示般，壓電元件1被設為在各振動區域22中之另一端部22B(即是，自由端)翹曲的狀態。在本實施型態中，在各振動區域22中之另一端部22b被設為沿著與支持基板11側相反側的狀態。另外，各振動區域22中之翹曲量被設為相同，例如被構成翹曲成壓電膜50之厚度以上。
再者，各振動區域22係如上述般，被設為下層壓電膜51和上層壓電膜52被疊層的雙壓電晶片構造，可獲得圖29所示的電路構成。而且，在構成壓電裝置之情況，在各振動區域22中之各電極膜60與電路基板120並聯連接。即是，在本實施型態中，壓力檢測訊號分別從各振動區域22被輸出至電路基板120。另外，在本實施型態中，振動區域22為翹曲的形狀，壓力檢測訊號從各振動區域22被輸出至電路基板120之點相當於提升部。
以上為本實施型態中之壓電元件1之構成。另外，如此之壓電元件1被製造成下述般。即是，在藉由濺鍍法在絕緣體12上成膜壓電膜50之時，使通過支持基板11而對壓電膜50施加特定電壓，而成為在成膜的壓電膜50產生特定的殘留應力。之後，形成分離用縫隙41而分離各振動區域22，藉由殘留應力，使各振動區域22之另一端22b翹曲，依此製造圖28所示的壓電元件1。
如此之壓電元件1係如上述般從各振動區域22輸出壓電檢測訊號。此時，例如圖30A所示般，在音壓從與法線方向一致的方向被施加於各振動區域22的情況，各振動區域22之變形的方式相等，從各振動區域22被輸出的壓力檢測訊號也相等。另一方面，例如圖30B所示般，在音壓從與法線方向交叉的方向被施加於各振動區域22的情況，在各振動區域22變形的方式不同，從各振動區域22被輸出的壓力檢測訊號不同。即是，因應音壓從各振動區域22被施加的方向的壓電檢測訊號被輸出。因此，在本實施型態之壓電元件1中，也可以檢測音壓被施加的方向。即是，本實施型態之壓電元件1被設為具有指向性的構成。
此時，在本實施型態中，被設為振動區域22翹曲的狀態。因此，在各振動區域22中，因應音壓被施加的方向的變形之差容易變大。因此，也可以謀求與指向性有關的靈敏度之提升。
若藉由上述說明的本實施型態時，壓電元件1係在各振動區域22翹曲的狀態下被配置。而且，在與電路基板120連接之情況，各振動區域22與電路基板120並聯連接。因此，可以一邊具備指向性，一邊又可以進一步謀求提升關於指向性的靈敏度。
(第14實施型態之變形例)
針對第14實施型態之變形例予以說明。在上述第14實施型態中，如圖31所示般，各振動區域22即使一邊對電路基板120並聯連接，一邊彼此串聯連接亦可。
(第15實施型態)
針對第15實施型態予以說明。本實施型態相對於第1實施型態，係在振動區域22形成反射膜者。關於其他，因與第1實施型態相同，在此省略說明。
在本實施型態中，如圖32所示般，在各振動區域22，於最表層形成比起壓電膜50或電極膜60、墊部71c、72c，反射率較高的反射膜140。在本實施型態中，反射膜140被形成在上層電極膜63上。另外，反射率高，換言之，也可以稱為吸收率低。再者，在本實施型態中，反射膜140係由比起壓電膜50，楊氏係數較小的材料構成，由例如鋁之單層膜或多層膜構成。而且，反射膜140被形成在第2區域R2。另外，在本實施型態中，印刷基板140相當於提升部。
以上為本實施型態中之壓電元件1之構成。接著，針對上述壓電振動子1之製造方法予以說明。
於製造壓電元件1之時，在支持基板11上，依序成膜絕緣膜12、壓電膜50、電極膜60、反射膜140等並適當地予以圖案製造。而且，於形成凹部10a之後，形成分離用縫隙41。
之後，在本實施型態中，進行良否判定。具體而言，如圖33所示般，準備具備照射雷射束L之雷射光源151，和檢測接收到的雷射束L之強度的檢測器152的檢測裝置150。檢測器152具有進行根據臨界值之判定的無圖示的控制部，控制部係由微電腦等構成，該微電腦具備由CPU、ROM、RAM、快閃記憶體或HDD等之非暫態實體記憶媒體構成的記憶部等。CPU為Central Processing Unit之簡稱，ROM為Read Only Memory之簡稱，RAM為Random Access Memory之簡稱，HDD為Hard Disk Drive之簡稱。ROM等之記憶媒體為非暫態實體記憶媒體。
在記憶部係在振動區域22未產生翹曲的情況，將接收到雷射束L之時的強度當作臨界值而被記憶。而且，控制部係比較在檢測器152接收到的雷射束L之強度和臨界值而進行良否判定。
具體而言，將沿著相對於被配置在振動區域22之反射膜140的法線方向之面作為基準面T，從相對於基準面T傾斜的方向對反射膜140照射雷射束L。而且，以檢測器152檢測出反射的雷射束L。而且，控制部係比較在檢測器152接收到的雷射束L之強度和臨界值而進行良否判定。例如，檢測器152係在檢測到的雷射束L的強度低於臨界值之50%之情況。進行判定成振動區域22之狀態為異常的良否判定。在此情況，例如，圖34所示般，在振動區域22之翹曲大而以檢測器152無檢測出雷射束L之情況，也判定成振動區域22之狀態異常。另外，雷射束L係以選定反射率變成最大者為佳，例如，在以鋁構成反射膜140之情況，以使用1μm的可見光區域之波長為佳。再者，在以其他金屬膜構成反射膜140之情況，也有以使用紅外線區域的波長為佳之情況。
若藉由上述說明的本實施型態時，因在振動區域22配置反射膜140，故可以進行振動區域22之良否判定。因此，可以製造可以抑制檢測精度下降的壓電元件1。再者，在本實施型態中，因藉由對反射膜140照射雷射束L，進行良否判定，故可以進行非接觸的良否判定。
再者，反射膜140係由比起壓電膜50，楊氏係數較小的材料構成。因此，可以抑制反射膜140阻礙壓電膜50之變形，可以抑制檢測精度下降之情形。
而且，反射膜140被配置在第2區域R2。因此，可以抑制反射膜140影響至振動區域22之中應力容易變大的第1區域R1的情形。
另外，亦可以將本實施型態適用於第14實施型態。在此情況，被使用於判定的臨界值若被設定成振動區域22之翹曲量成為期待值之情況的強度即可。
(第16實施型態)
針對第16實施型態予以說明。本實施型態係如第9實施型態般，於構成壓電裝置之時，進行自行診斷。關於其他，因與第9實施型態相同，在此省略說明。
在本實施型態之壓電元件中，如圖35所示般，壓電元件1係經由接合構件2係在印刷基板131之一面131a搭載支持基板11之另一面11b。而且，在本實施型態中，與參照上述第10實施型態之圖17而說明的壓電裝置相同，在印刷基板131形成貫通孔131b。因此，在本實施型態中，藉由音壓通過貫通孔131b而被施加於感測部30，檢測音壓。而且，在本實施型態中，在殼體130內，將形成貫通孔131b之部分和感測部30之間的空間成為受壓面空間S1。再者，包含挾持感測部30而位於與受壓面空間S1相反側的空間，將不隔著分離用縫隙41而與該空間連續的空間成為背面空間S2。
另外，本實施型態中，雖然舉如圖35般被構成的壓電裝置為例予以說明，但是即使針對第9實施型態或第10實施型態般被構成的壓電裝置，亦可以適用下述構成。
本實施型態之壓電元件1係如圖36及圖37所示般，具有與各振動區域22電性連接的第1～第5墊部701～705。另外，第1～第5墊部701～705係相當於在上述第1實施型態中之墊部71c、72c者。而且，壓電元件1與在上述第14實施型態之變形例說明的圖31相同，成為各振動區域22相對於電路基板120係經由第1～第5墊部701～705被並聯連接，並且彼此被串聯連接的構成。
電路基板120係進行特定訊號處理，在本實施型態中，配置控制部120a。另外，控制部120a即使與電路基板120被另外配置亦可。
控制部120a係與上述第15實施型態之控制部相同，係由微電腦等構成，該為電電腦具備有由CPU、ROM、RAM、快閃記憶體或HDD等之非暫態實體記憶體構成的記憶部等。而且，本實施型態之控制部120a進行壓電裝置之自行診斷。
具體而言，本實施型態之控制部120a進行壓電元件1之異常判定。詳細而言，控制部120a係對第1墊部701和第5墊部705之間施加特定電壓而以異常判定訊號使各振動區域22振動。更詳細而言，控制部120a係以在實際的音壓檢測能施加於振動區域22之音壓的頻率使各振動區域22進行一般振動。在本實施型態中，如圖38所示般，以共振頻率成為13kHz方式，形成振動區域22，作為能施加於壓電元件1之音壓的頻率，假設數kHz。
因此，控制部120a係以各振動區域22藉由數kHz進行一般振動之方式，對第1墊部701和第5墊部705之間施加特定電壓。另外，在本實施型態中，共振頻率被設為13kHz，同時能施加於壓電元件1之音壓之頻率假設為數kHz。因此，控制部120a可以說係藉由低於共振頻率之頻率進行一般振動之方式，對第1墊部701和第5墊部705之間施加特定電壓。
依此，在各振動區域22為正常之情況，從第2～第4墊部702～704施加與特定電壓對應的分壓。對此，在各振動區域22之間產生短路等之異常之情況，從第2～第4墊部702～704被輸出的電壓變化。再者，在各振動區域22之間產生斷線等之異常之情況，電壓不從第2～第4墊部702～704被輸出。因此，控制部120a係將第2～第4墊部702～704之電壓與特定臨界值進行比較而進行異常判定。
再者，本實施型態之控制部120a進行推定背面空間S2之壓力的自行診斷。而且，控制部120a係根據推定的壓力對從壓電元件1被輸出的壓力檢測訊號進行補正。
即是，在上述般的壓電裝置中，藉由背面空間S2之壓力變動，振動區域22之振動的方式變化。具體而言，背面空間S2之壓力係因應周圍之溫度、濕度及所使用的高度(即是，地點)等而變化。而且，振動區域22係背面空間S2之壓力越高越難振動，背面空間S2之壓力越低越容易振動。即是，在上述般的壓電裝置中，有檢測靈敏度藉由使用環境而變化之可能性。因此，在本實施型態中，推定背面空間S之壓力，根據推定的壓力，對從壓電元件1被輸出的壓力檢測訊號進行補正。
具體而言，因控制部120a係推定背面空間S2之壓力，故對壓電元件1施加壓力推定訊號而使各振動區域22推定振動。在此情況，控制部120a係以各振動區域22之振動變大之方式，以共振頻率使各振動區域22最大振動。而且，控制部120a係根據施加壓力推定訊號之時的第2～第4墊部702～704之電壓，和施加異常判定訊號之時的第2～第4墊部702～704之電壓的差，進行下一個動作。即是，控制部120a係進行算出作為共振倍率的Q值，同時從Q值推定背面空間S2之壓力的自行診斷。
另外，算出Q值之情況，具體的算出方法能夠適當地變更。例如，即使根據施加壓力推定訊號之時的第2～第4墊部702～704之電壓，和施加異常判定訊號之時的第2～第4墊部702～704之電壓中之任一個的差，算出Q值亦可。再者，即使根據施加壓力推定訊號之時的第2～第4墊部702～704之電壓，和施加異常判定訊號之時的第2～第4墊部702～704之電壓之差的平均值，算出Q值亦可。
而且，控制部120a係在檢測音壓之情況，根據推定的背面空間S2之壓力，對從壓電元件1被輸出的壓力檢測訊號進行補正。具體而言，控制部120a係以背面空間S2之壓力為大氣壓之情況為基準，對壓電檢測訊號乘上因應背面空間S2之壓力的補正係數。例如，控制部120a係在背面空間S2之壓力大於大氣壓之情況，因振動區域22變得難振動，故壓力檢測訊號乘上大於1的值作為補正係數而進行補正。另一方面，控制部120a係在背面空間S2之壓力小於大氣壓之情況，因振動區域22變得容易振動，故壓力檢測訊號乘上小於1的值作為補正係數而進行補正。依此，壓力檢測訊號成為因應背面空間S2之壓力(即是，振動區域22之振動的容易度)的值。另外，補正係數例如事先藉由實驗等被導出，與背面空間S2之壓力建立對應而被記憶於控制部120a。
若藉由上述說明的本實施型態時，因進行自行診斷，故可以謀求檢測精度之提升。具體而言，因進行壓電元件1之異常判定，故在具有異常之情況，藉由停止音壓之檢測，可以謀求檢測精度之提升。再者，因推定背面空間S2之壓力，故可以藉由根據推定的壓力的補正，提升檢測精度之提升。
(第16實施型態之變形例)
針對第16實施型態之變形例予以說明。在上述第16實施型態中，控制部120a即使僅進行異常判定及背面空間S2的壓力之推定的一方亦可。再者，在上述第16實施型態中，控制部120a係在進行背面空間S2之壓力之時，若為成為與一般振動不同的振動時，即使以共振頻率使各振動區域22振動亦可。但是，藉由以共振頻率使各振動區域22最大振動，可以增大與一般振動的差，可以提升背面空間S2之壓力的推定精度。
(第17實施型態)
針對第17實施型態予以說明。本實施型態相對於第1實施型態，規定有下層電極膜61、中間電極膜62及上層電極膜63之膜厚者。關於其他，因與第9實施型態相同，在此省略說明。
在本實施型態中之壓電元件1係如圖39所示般，被設為與上述第1實施型態相同的構成。但是，在本實施型態中，在壓電元件1不形成應力增加用縫隙42。
而且，在本實施型態中，下層電極膜61之膜厚及上層電極膜63之膜厚較中間電極膜62之膜厚薄。例如，在本實施型態中，下層電極膜61及上層電極膜63之膜厚被設為25nm，中間電極膜62之膜厚被設為100nm。另外，在下層壓電膜51中之下層電極膜61和中間電極膜62之間的膜厚，及上層壓電膜52中之中間電極膜62和上層電極膜63之間的膜厚被設為與上述第1實施型態相同，例如被設為50μm。
再者，下層電極膜61和上層電極膜63被設為剛性相等。在本實施型態中，下層電極膜61和上層電極膜63係由相同的材料構成，同時藉由膜厚被設為相等，剛性成為相等。
另外，在本實施型態中，被配置在第1區域R1及第2區域R2之下層電極膜61、中間電極膜62及上層電極膜63之各者成為上述構成。但是，下層電極膜61、中間電極膜62及上層電極膜63至少被形成在第1區域R1的部分若被設為上述構成即可。再者，在本實施型態中，下層電極膜61、中間電極膜62及上層電極膜63之構成相當於提升部。
如上述說明般，在本實施型態中，下層電極膜61之膜厚及上層電極膜63之膜厚較中間電極膜62之膜厚薄，下層電極膜61和上層電極膜63之剛性相等。因此，藉由謀求靈敏度之提升，可以提升檢測精度。
即是，各振動區域22係如上述般一端部22a被設為固定端，同時另一端部22b被設為自由端。因此，如圖40所示般，例如在各振動區域22中，荷重(即是，音壓)從上層電極膜63側被施加於下層電極膜61側之時，壓縮應力被施加於下層壓電膜51側，拉伸應力被施加於上層壓電膜52側。而且，各振動區域22係在厚度方向中之中心部成為不被施加壓縮應力及拉伸應力的中立面Cs。
在此情況，如圖41及圖42所示般，被施加於下層壓電膜51之壓縮應力係離中立面Cs越遠越大。同樣，被施加於上電壓膜52之拉伸應力係離中立面Cs越遠越大。因此，下層壓電膜51及上層壓電膜52係藉由被形成包含從中立面Cs遠離的位置，可以成為包含應力大之部分的構成。即是，下層壓電膜51及上層壓電膜52係藉由被形成包含從中立面Cs遠離的位置，可以成為包含容易產生電荷之部分的構成。但是，藉由單純地增厚下層壓電膜51之膜厚，使包含從中立面Cs遠離之位置的情況，因下層電極膜61和中間電極膜62之間隔變寬，故下層電極膜61和中間電極膜62之間的電容下降。同樣，藉由單純地增厚上層壓電膜52之膜厚，使包含從中立面Cs遠離之位置的情況，因中間電極膜62和上層電極膜63之間隔變寬，故中間電極膜62和上層電極膜63之間的電容下降。
因此，如本實施型態般，藉由一面增厚中間電極膜62，一面薄化下層電極膜61，可以使下層壓電膜51不變更下層壓電膜51之膜厚而包含從中立面Cs遠離的位置。同樣，藉由一面增厚中間電極膜62，一面薄化上層電極膜63，可以使上層壓電膜52不變更上層壓電膜52之膜厚而包含從中立面Cs遠離的位置。因此，可以使在下層壓電膜51及上層壓電膜52產生的電荷變多，藉由提升靈敏度而提升檢測精度。
再者，下層電極膜61及上層電極膜63係使用鉬、銅、鉑、白金、鈦等而構成，楊氏係數大於構成下層壓電膜51及上層壓電膜52之氮化鋁鈧等。因此，下層電極膜61及上層電極膜63越厚，下層壓電膜51及上層壓電膜52之變形越容易被阻礙。因此，如本實施型態般，藉由使下層電極膜61及上層電極膜63之膜厚較中間電極膜62之膜厚薄，比起下層電極膜61及上層電極膜63之膜厚與中間電極膜62之膜厚相同之情況，可以抑制下層壓電膜51及上層壓電膜52之變形被阻礙。因此，可以抑靈敏度下降之情形，可以提升檢測精度。
並且，下層電極膜61和上層電極膜63被設為剛性相等。因此，可以抑制於施加音壓之時，下層壓電膜51和上層壓電膜52之變形之方式不同的情形，可以抑制全體之變形被阻礙。
(第17實施型態之變形例)
針對上述第17實施型態之變形例予以說明。在上述第17實施型態中，下層電極膜61和上層電極膜63若為膜厚較中間電極膜62薄，同時剛性相等者時，即使構成下述般亦可。即是，下層電極膜61和上層電極膜63即使被構成由不同材料構成，藉由膜厚被調整，使剛性成為相等亦可。
(第18實施型態)
針對第18實施型態予以說明。本實施型態相對於第11實施型態，係根據寄生電容Cp而規定電荷區域620之數量者。關於其他，因與第11實施型態相同，在此省略說明。
本實施型態之壓電元件1係與上述第11實施型態相同，第1中間電極膜62a被分割成複數電荷區域620，同時各電荷區域620被串聯連接。再者，各電荷區域620被設為各者為相同面積，彼此被串聯連接。
在此，將在壓電元件1中之靈敏度(即是，輸出電壓)設為ΔV，將感測部30之全體的電容設為Co，將寄生電容設為Cp，將音壓轉換成電壓之時的聲電轉換係數設為Γ，將電荷區域620之數量設為n，下述式3成立。
(式3)ΔV=Γ×{Co/(Co+Cp)}
另外，寄生電容Cp係連接壓電元件1(即是，感測部30)和電路基板120的部分之電容，或產生在電路基板120之內部的電容等的和。再者，感測部30之電容Co係因各電荷區域620被串聯連接，故與1/n2
呈比例。
因此，如圖43A～圖43C所示般，當將從振動區域22中之一端部22a至另一端部22b為止的長度設為長度d時，靈敏度係因應長度d、電荷區域620之數量及寄生電容Cp而變化。而且，在現狀中，以提升靈敏度為佳，從最大靈敏度至90%左右的範圍被設為實用性。因此，在本實施型態中，以成為最大靈敏度之90%以上之方式，設定電荷區域620之數量。例如，圖43B所示般，從振動區域22中之一端部22a至另一端部22b為止的長度d為490μm，在寄生電容Cp為2.0×10-12
F之情況，藉由被形成全體之電荷區域620的數量成為8～16之方式，可以謀求靈敏度之下降。即是，藉由在各振動區域22中之電荷區域620之數量被設為2～4，可以謀求靈敏度之下降。
在以上說明的本實施型態中，被規定成電荷區域620之數量成為最大靈敏度之90%以上。因此，可以藉由謀求檢測靈敏度之提升而謀求檢測精度之提升。
(第19實施型態)
針對第19實施型態予以說明。本實施型態係調整如第9實施型態般構成壓電裝置之時的受壓面空間S1之聲音順性Cf、背面空間S2之聲音順性Cb、分離用縫隙41之聲阻Rg等者。關於其他，因與第9實施型態相同，在此省略說明。
本實施型態之壓電元件係如圖44所示般，壓電元件1中之支持基板11之另一面11b經由接合構件2被搭載於印刷基板131之一面131a而被構成。而且，在本實施型態中，與參照上述第10實施型態之圖17而說明的壓電裝置相同，在印刷基板131形成貫通孔131b。因此，在本實施型態中，藉由音壓通過貫通孔131b而被施加於感測部30，檢測音壓。再者，在本實施型態中，在殼體130內，將形成貫通孔131b之部分和感測部30之間的空間成為受壓面空間S1。包含挾持感測部30而位於與受壓面空間S1相反側的空間，將不隔著分離用縫隙41而與該空間連續的空間成為背面空間S2。
另外，在本實施型態中，雖然在壓電元件1之支持基板11不形成凹陷構造，但是即使在支持基板11形成凹陷構造亦可。再者，在本實施型態之壓電元件1，雖然也不形成上述第1實施型態般之應力增加用縫隙42，但是即使形成有應力增加用縫隙42等亦可。以下，雖然舉出圖44般被構成的壓電裝置為例予以說明，但是即使針對上述各實施型態之壓電元件1的壓電裝置亦可以適用下述的構成。
首先，壓電裝置之靈敏度係依存於低頻衰減頻率、壓電元件1之共振頻率、赫爾姆霍茲(Helmholtz)頻率。具體而言，當將低頻衰減頻率設為fr時，低頻衰減頻率fr以下述式4表示。當將壓電元件1之共振頻率設為fmb時，共振頻率fmb以下述式5表示。當將赫爾姆霍茲頻率設為fh時，赫爾姆霍茲頻率fh以下述式6表示。
另外，在式5中之Lm係與壓電元件1之各振動區域22中之全體之質量呈比例的常數。在式6中之Lf係貫通孔132a之的慣性。
而且，貫通孔132a之慣性Lf係以下述式7表示。再者，受壓面空間S1之聲音順性Cf以下述式8表示。背面空間S2之聲音順性Cb以下述式9表示。分離用縫隙41之聲阻Rg以下述式10表示。
另外，在式7～10中，ρ0為空氣密度，a為貫通孔132a之半徑，L1為印刷基板131之厚度(即是貫通孔132a的長度)。再者，Vf係受壓面空間S1之容積，Vb為背面空間S2之容積，c為音速。μ為空氣之摩擦阻力，h為振動區域22之厚度，g為分離用縫隙41之寬度，L2係各振動區域22中之分離用縫隙41之長度。分離用縫隙41之寬度g係指各振動區域22之側面彼此相向之部分的間隔，例如成為圖36中所示的部分之寬度。分離用縫隙41之長度L2成為例如圖36中所示之部分的長度。
而且，本實施形態之壓電裝置係如圖45所示般，被構成頻率依低頻衰減頻率fr、壓電元件1之共振頻率fmb、赫爾姆霍茲頻率fh之順序變大。具體而言，各頻率如上述式4～6所示般，成為根據受壓面空間S1之聲音順性Cf、背面空間S2之聲音順性Cb、分離用縫隙41之聲阻Rg的值。因此，各頻率係藉由調整受壓面空間S1之聲音順性Cf、背面空間S2之聲音順性Cb、分離用縫隙41之聲阻Rg而調整其值。
更詳細而言，低頻衰減頻率fr係越增大聲音順性Cb及聲阻Rg變得越小。壓電元件1之共振頻率fmb係越增大聲音順性Cm及聲音順性Cb變得越小。在本實施型態中，藉由調整聲音順性Cb，調整壓電元件1之共振頻率fmb。赫爾姆霍茲頻率fh係慣性Lf及聲音順性Cf越大變得越小。在本實施型態中，藉由調整聲音順性Cf，調整赫爾姆霍茲頻率fh。依此，比起赫爾姆霍茲頻率fh被設為小於壓電元件1之共振頻率fmb的情況，因壓電裝置一般被利用於低頻衰減頻率fr和共振頻率fmb之間的頻率之音壓，故可以增加能維持靈敏度的頻率。
再者，在本實施型態中，以低頻衰減頻率被設為20Hz，同時赫爾姆霍茲頻率成為20kHz之方式，調整聲音順性Cf、聲音順性Cb、聲阻Rg。即是，在本實施型態中，低頻衰減頻率fr及赫爾姆霍茲頻率fh被設為從聽覺範圍偏離的值。因此，在本實施型態之壓電裝置中，可以增加能在聽覺範圍的靈敏度的頻率。另外，壓電元件1之共振頻率fmb被設為例如13kHz。
在此，為了使低頻衰減頻率成為20Hz以下，若設為下述般即可。即是，影響至低頻衰減頻率fr的聲阻Rg係如上述式10般所示。因此，為了將低頻衰減頻率設為20Hz以下，若使上述式4成為20Hz以下即可，若滿足聲阻Rg為Rg≧1/(40π×Cb)即可。因此，若分離用縫隙41之寬度g被形成滿足下述式11即可。
而且，將低頻衰減頻率fr設為20Hz以下所需的聲阻Rg係以在背面空間S2之聲音順性Cb的關係而成為圖46所示般。在此情況，現實的振動區域22之厚度h及分離用縫隙41之長度L2與分離用縫隙41之寬度g的關係如圖47所示般。因此，如圖47所示，分離用縫隙41之寬度g若為3μm以下，可以將低頻衰減頻率設為20Hz以下。
再者，在上述般的壓電裝置中，於音壓被導入至受壓面空間S1之時，背面空間S2之容積越大，靈敏度容易變得越高，作為訊號和雜訊之比的SN比容易變大。在此情況，如圖48所示般，訊號強度比(dB)係當作為聲音順性Cb對聲音順性Cf之比的Cb/Cf成為14以下時，成為相對於基準通常被認為雜訊大的-3dB。另外，在此的基準係以訊號最大之情況的SN比作為基準。再者，相對於基準為-3dB以下係指以人類的聽力難以感受到變化的範圍。因此，在本實施型態中，Cb/Cf被設為14以下。依此，可以謀求雜訊的降低。
並且，在上述般的壓電裝置中，藉由振動區域22振動進行檢測。再者，上述般的壓電裝置中，即使在音壓不被導入至受壓面空間S1之狀態中，藉由布朗運動(Brownian motion)，空氣微粒從受壓面空間S1側及背面空間S2側對振動區域22衝突。在此情況，當空氣微粒從受壓面空間S1側的衝突和空氣微粒從背面空間S2側的衝突之方式不同時，振動區域22不需要振動而成為雜訊的主要原因。
因此，為了降低與不需要振動有關的雜訊，以使受壓面空間S1之容積和背面空間S2之容積相等為佳。依此，可以謀求與不需要振動有關的雜訊的降低。
如上述說明般，在本實施型態中，以低頻衰減頻率fr、壓電元件1之共振頻率fmb、赫爾姆霍茲頻率fh依序頻率變大之方式，調整聲音順性Cf、聲音順性Cb、聲阻Rg。因此，比起赫爾姆霍茲頻率fh被設為小於壓電元件1之共振頻率fmb之情況，可以增加能維持靈敏度的頻率。
再者，在本實施型態中，低頻衰減頻率fr被設為20Hz以下，赫爾姆霍茲頻率fh被設為20kHz以上。因此，可以維持在聽覺範圍的靈敏度。在此情況，藉由分離用縫隙41之寬度g被設為3μm以下，可以將低頻衰減頻率fr設為20Hz以下。
並且，在本實施型態中，Cb/Cf被設為14以下。因此，可以謀求雜訊的降低。
再者，在本實施型態中，藉由使受壓面空間S1之容積和背面空間S2之容積相等，可以謀求與不需要振動有關的雜訊之降低。
(其他之實施型態)
本揭示係依據實施型態而記載，本揭示應理解成非限定於該實施型態或構造。本揭示也包含各種變形例或均等範圍內之變形。除此之外，即使各種組合或型態，以及該些包含僅一個要素或更多，或者以下的其他組合型態也屬於本揭示之範疇或思想範圍。
例如，在上述各實施型態中，振動部20若設為具有至少1層的壓電膜50，和1層電極膜60的構成即可。
再者，在上述各實施型態中，振動部20之中的浮動區域21b並非被分割成4個振動區域22，即使被分割成3個以下的振動區域22即可，即使被分割成5個以上之振動區域22亦可。
而且，在上述各實施型態中，感測部30即使由一個振動區域22構成亦可。即是，例如，在上述第1實施型態中，即使依據藉由一個浮動區域21b構成的4個振動區域22，構成4個感測部30亦可。在此情況，在上述第7實施型態中，設為僅具有一個浮動區域21b的構成，同時設為在該浮動區域21b構成複數振動區域22，且設為各振動區域22之共振頻率不同亦可。
再者，在上述第1實施型態中，不形成增加用縫隙42而形成分離用縫隙41到達至浮動區域21b之角部，角部C1係藉由第1區域R1中之分離用縫隙41朝內側凹陷而被構成亦可。
並且，在上述第3實施型態中，振動區域22之一端部22a若被設為相對於假想線K1具有朝與另一端部22b側相反側膨脹之部分的形狀即可，即使不被設為圓弧狀亦可。同樣，在上述第4實施型態中，振動區域22之一端部22a若被設為相對於假想線K2具有朝與另一端部22b側相反側膨脹之部分的形狀即可，即使不被設為圓弧狀亦可。
再者，在上述第5實施型態中，即使硬膜82在第2區域R2中之第1區域R1側和另一端側22b側之間均等被形成亦可，即使被形成第1區域R1側較另一端部22b側更密集亦可。再者，在上述第5實施型態中，硬膜82被埋入的孔部81即使不被形成貫通上層電極膜63、上層壓電膜52、中間電極膜62及下層壓電膜51亦可。例如，即使孔部81被形成僅貫通上層電極膜63及上層壓電膜52亦可。即是，被形成在第2區域R2的硬膜82之深度能夠適當變更。並且，在上述第5實施型態中，硬膜82即使非與第1、第2電極部71、72相同的材料亦可，若為比起壓電膜50，楊氏係數較高的材料時，則不特別限定構成的材料。
而且，在上述第6實施型態中，即使不形成應力增加用縫隙42亦可。作為，如此的壓電元件1，可以抑制檢測精度下降之情形。並且，在上述第6實施型態中，溫度檢測元件91及發熱元件92即使被被配置在形成有下層電極膜61之部分亦可，即使被配置在形成有上層電極膜63之部分亦可。再者，在上述第6實施型態中，溫度檢測元件91及發熱元件92即使被形成在第1區域R1亦可。並且，如在上述第7實施型態等記載般，在上述第7實施型態之後的各實施型態中，不形成應力增加用縫隙42。但是，應力增加用縫隙42即使適當地形成在各實施型態亦可。再者，在上述第16實施型態中，可以藉由控制部120a之動作而謀求檢測精度之提升。因此，在上述第16實施型態中，即使在壓電元件1不形成提升部亦可。
並且，在上述第7實施型態中，若各感測部30中之各者的振動區域22之共振頻率不同時，振動區域22之構成則可適當變更。例如，在各感測部30中之各者的振動區域22即使藉由膜厚或材料不同而被設為共振頻率不同亦可。
另外，在使各感測部30中之各者的振動區域22之膜厚或材料成為不同者之情況，例如即使藉由成膜構成振動區域22之壓電膜50之時等適當配置遮罩，使膜厚或材料成為不同者亦可。再者，例如藉由於成膜壓電膜50之後，以蝕刻等調整膜厚，或在蝕刻後的部分再次成膜另外的壓電膜50，使膜厚或材料成為不同者亦可。但是，在蝕刻後的部分再次成膜另外的壓電膜50之情況，例如由於藉由將蝕刻後之部分的側面設為錐狀，在新成膜的另外的壓電膜50之間難形成氣泡故較理想。如此一來，在使膜厚或材料成為不同之情況，可以因應使用用途容易選擇適合者。再者，即使各振動區域22係一端部22a和另一端部22b之間的長度不同，並且變更膜厚或材料亦可。
而且，亦可以適當地組合上述實施型態。例如，即使將上述第1實施型態適當地組合於上述各實施型態，成為在第1區域R1之中的從支持體10浮動的部分形成角部C1亦可。即使將上述第2實施型態適當地組合於上述各實施型態，成為在第1區域R1之一端部形成角部C2亦可。即使將上述第3實施型態適當地組合於上述各實施型態，將凹部10a之開口端設為圓形狀亦可。即使將上述第4實施型態適當地組合於上述各實施型態，成為將凹部10a之開口端設為圓形狀，同時在浮動區域21b形成分離用縫隙41，該分離用縫隙41在浮動區域21b內終端亦可。即使將上述第5實施型態適當地組合於上述各實施型態，成為在第2區域R2配置硬膜82亦可。即使將上述第6實施型態適當地組合於上述各實施型態，成為配置溫度檢測元件91及發熱元件92亦可。即使將上述第7實施型態適當地組合於上述各實施型態，成為具備複數感測部30的構成亦可。即使將上述第8實施型態適當地組合於上述各實施型態，成為在凹部10a之側面具備保護膜100亦可。即使將上述第9實施型態適當地組合於上述各實施型態，成為在支持基板11之側面11c形成凹陷構件亦可。即使將上述第10實施型態組合於上述各實施型態，成為在印刷基板131覆晶安裝壓電元件1亦可。即使將上述第11實施型態適當地組合於上述各實施型態，成為變更中間電極膜62之形狀。即使將上述第12、第13實施型態適當地組合於上述各實施型態，成為變更第1區域R1和第2區域R2之區劃的方式亦可。即使將上述第14實施型態組合於上述各實施型態，成為使各振動區域22翹曲，而且各振動區域22在電路基板120並聯連接亦可。即使將上述第15實施型態適當地組合於上述各實施型態，成為具備反射膜140的構成亦可。即使將上述第16實施型態適當地組合上述各實施型態，成為在構成壓電裝置之時進行自行診斷亦可。即使將上述第17實施型態組合於各實施型態，成為下層電極膜61及上層電極膜63之膜厚較中間電極膜62薄，同時下層電極膜61和上層電極膜63之剛性相等亦可。即使將上述第18實施型態適當地組合於各實施型態，成為將電荷區域620之數量調整成最大靈敏度的90%以上亦可。即使將上述第19實施型態適當地組合於各實施型態，成為低頻衰減頻率fr、壓電元件1之共振頻率fmb、赫爾姆霍茲頻率fh被調整成依序變大。而且，亦可將組合上述各實施型態後的彼此再進一步予以組合。另外，在上述各實施型態或組合各實施型態之中，亦可因應所需而設為除去構成要件之一部分的構成。例如，如上述般，在上述第6實施型態等中，即使不形成應力增加用縫隙42亦可。
本揭示係依據實施型態而記載，本揭示應理解成非限定於該實施型態或構造。本揭示也包含各種變形例或均等範圍內之變形。除此之外，即使各種組合或型態，以及該些包含僅一個要素或更多，或者以下的其他組合型態也屬於本揭示之範疇或思想範圍。Hereinafter, embodiments of the present disclosure will be described based on the drawings. In addition, in each of the following embodiments, the same reference numerals are assigned to the same or equal parts, and the description will be given. (First Embodiment) A piezoelectric element 1 according to a first embodiment will be described with reference to FIGS. 1 and 2 . In addition, the piezoelectric element 1 of this embodiment is suitably utilized for a microphone, for example. Furthermore, FIG. 1 corresponds to a sectional view taken along line II in FIG. 2 . In addition, in FIG. 2 , illustration of a first electrode portion 71 , a second electrode portion 72 , etc. which will be described later is omitted. In addition, even in each figure corresponding to FIG. 2, the illustration of the 1st electrode part 71, the 2nd electrode part 72 etc. is abbreviate|omitted suitably. The piezoelectric element 1 of this embodiment includes a support 10 and a vibrating portion 20 . The support body 10 has a support substrate 11 and an insulating film 12 formed on the support substrate 11 . In addition, the supporting substrate 11 is made of, for example, a silicon substrate, and the insulating film 12 is made of an oxide film or the like. The vibrating part 20 constitutes the sensing part 30 that outputs a pressure detection signal corresponding to pressure such as sound pressure, and is arranged on the support 10 . Further, a concave portion 10 a for floating the inner edge side of the vibrating portion 20 is formed on the support body 10 . Therefore, the vibrator 20 has a support region 21a arranged on the support body 10, and a floating region 21b connected to the support region 21a and floating on the concave portion 10a. In addition, the shape of the opening end of the concave portion 10 a on the side of the vibrating portion 20 (hereinafter, also simply referred to as the opening end of the concave portion 10 a ) is set to a planar rectangular shape. Therefore, the floating region 21b is formed in a substantially rectangular planar shape. Furthermore, the floating region 21b of the present embodiment is divided into four vibration regions 22 by the separation slit 41 and the stress increasing slit 42 . In this embodiment, two separation slits 41 are formed to extend toward opposite corners of the floating region 21b through the approximate center of the floating region 21b. However, the separation slit 41 of this embodiment terminates in the floating region 21b. The floating region 21b will be described in detail later, but the stress increasing slit 42 is connected to the separating slit 41 and extended to the end of the floating region on the support region 21a side, and is divided into four vibration regions 22 . In addition, although not particularly limited, in the present embodiment, the interval between the vibrating regions 22 (that is, the width of the separation slit 41 ) is set to about 1 μm. And, because each vibrating area 22 is divided and constituted by the floating area 21b as described above, one end portion 22a of each is set to be supported by the support body 10 (that is, the supporting area 21a), and the other end portion 22b is set to be free. end. That is, each vibrating area 22 is in a state of being connected to the support area 21 a and at the same time is in a state of being supported by a cantilever. In addition, one end portion 22a of each vibrating region 22 is a portion that coincides with the opening end of the concave portion 10a in the normal direction (hereinafter, also simply referred to as the normal direction) with respect to the surface direction of the vibrating portion 20, A portion bordering the support region 21a. Therefore, the shape of one end portion 22a of each vibration region 22 depends on the shape of the opening end of the concave portion 10a. The vibrator 20 is configured to include a piezoelectric film 50 and an electrode film 60 connected to the piezoelectric film 50 . Specifically, the piezoelectric film 50 has a lower piezoelectric film 51 and an upper piezoelectric film 52 laminated on the lower piezoelectric film 51 . Furthermore, the electrode film 60 has a lower electrode film 61 disposed below the lower piezoelectric film 51, an intermediate electrode film 62 disposed between the lower piezoelectric film 51 and the upper piezoelectric film 52, and an upper piezoelectric film. 52 on the upper electrode film 63. That is, the vibrator 20 is sandwiched by the lower piezoelectric film 51 by the lower electrode film 61 and the intermediate electrode film 62 , and the upper voltage film 52 is sandwiched by the intermediate electrode film 62 and the upper electrode film 63 . In addition, the piezoelectric film 50 is formed by sputtering or the like. In addition, the fixed end side of each vibration area 22 is set as the first area R1, and the free end side is set as the second area R2. Furthermore, the lower electrode film 61 , the intermediate electrode film 62 , and the upper electrode film 63 are formed in the first region R1 and the second region R2 , respectively. However, the lower electrode film 61, intermediate electrode film 62, and upper electrode film 63 formed in the first region R1 are separated from the lower electrode film 61, intermediate electrode film 62, and upper electrode film 63 formed in the second region R2. The state of being insulated. Furthermore, the lower electrode film 61 , the intermediate electrode film 62 , and the upper electrode film 63 formed in the first region R1 are appropriately extended to the supporting region 21 a. In the support region 21a of the vibrating part 20, the first electrode part 71 electrically connected to the lower electrode film 61 and the upper electrode film 63 formed in the first region R1, and the intermediate electrode formed in the first region R1 are formed. The film 62 is electrically connected to the second electrode portion 72 . In addition, FIG. 1 is a cross-sectional view along line II in FIG. 2, showing different cross-sections of the vibration region 22 on the left side of the paper and the vibration region 22 on the right side of the paper. Further, in the support region 21a, the first electrode portion 71 electrically connected to the lower electrode film 61 and the upper electrode film 63 formed in the first region R1, and the intermediate electrode film formed in the first region R1 are respectively formed. 62 is electrically connected to the second electrode portion 72 . The first electrode portion 71 has a hole portion 71a formed through the upper electrode film 63, the upper piezoelectric film 52, and the lower piezoelectric film 51 to expose the lower electrode film 61, and is electrically connected to the lower electrode film 61 and the upper electrode film 63. connected through electrodes 71b. Furthermore, the first electrode portion 71 has a pad portion 71c formed on the through-electrode 71b and electrically connected to the through-electrode 71b. The second electrode portion 72 has a penetration electrode 72 b formed in a hole portion 72 a penetrating through the upper piezoelectric film 52 to expose the intermediate electrode film 62 and electrically connected to the intermediate electrode film 62 . Furthermore, the second electrode portion 72 has a pad portion 72c formed on the through-electrode 72b and electrically connected to the through-electrode 72b. In addition, the sensing unit 30 of the present embodiment is configured to output the change of electric charges in the four vibration regions 22 as one pressure detection signal. That is, four vibration regions 22 are electrically connected in series. More specifically, each vibrating region 22 has a bimorph structure, and each lower electrode film 61, each intermediate electrode film 62, and each upper electrode film 63 formed on each vibrating region 22 are connected in parallel, and each The vibration regions 22 are connected in series. In addition, the lower electrode film 61 , the intermediate electrode film 62 , and the upper electrode film 63 formed in the second region R2 are not electrically connected to the respective electrode portions 71 , 72 and are in a floating state. Therefore, the lower electrode film 61, the intermediate electrode film 62, and the upper electrode film 63 formed in the second region R2 are not necessarily required. It is provided in the part located in the second region R2. Furthermore, in this embodiment, the lower piezoelectric film 51 and the upper piezoelectric film 52 are formed using lead-free piezoelectric ceramics such as scandium aluminum nitride (ScAlN) or aluminum nitride (AlN). The lower electrode film 61 , the intermediate electrode film 62 , the upper electrode film 63 , the first electrode portion 71 , and the second electrode portion 72 are formed using molybdenum, copper, platinum, platinum, titanium, or the like. The above is the basic configuration of the piezoelectric element 1 in this embodiment. In such a piezoelectric element 1 , when a sound pressure is applied to each vibration region 22 (that is, the sensing unit 30 ), each vibration region 22 vibrates. In this case, for example, when the other end 22b side (that is, the free end side) of the vibration region 22 is positioned upward, the lower piezoelectric film 51 generates tensile stress and the upper piezoelectric film 52 generates compressive stress. Therefore, the sound pressure is detected by extracting the charge from the first electrode portion 71 and the second electrode portion 72 . At this time, the stress generated in the vibrating region 22 (that is, the piezoelectric film 50 ) is on the free end side (that is, the other end side), the stress is released, and the fixed end side is larger than the free end side. That is, the generation of electric charges on the free end side decreases, and the signal-to-noise ratio, that is, the SN ratio tends to decrease. Therefore, in the piezoelectric element 1 of the present embodiment, as described above, each vibration region 22 is divided into a first region R1 where stress tends to increase, and a second region R2 where stress tends to decrease. In addition, in the piezoelectric element 1, the lower electrode film 61, the upper electrode film 63, and the intermediate electrode film 62 arranged in the first region R1 are connected to the first and second electrode portions 71 and 72, thereby generating an electrode located in the first region R1. The charges of the lower piezoelectric film 51 and the upper piezoelectric film 52 are taken out. Accordingly, it is possible to suppress the influence of noise from becoming large. Furthermore, in the present embodiment, when a sound pressure is applied to each vibrating region 22, a deformation promoting structure is formed that promotes deformation of the piezoelectric film 50 located in the first region R1. In addition, in this embodiment, a deformation|transformation promotion structure corresponds to a lifting part. In this embodiment, stress increasing slits 42 for increasing the stress generated in the first region R1 when sound pressure is applied are formed in each vibration region 22 . Specifically, the stress increasing slit 42 is formed in the first region R1 to connect with the separation slit 41 , and at the same time forms a corner C1 at the connection portion with the separation slit 41 . Therefore, the vibrating region 22 is in a state where the corner C1 is formed at the portion floating from the support 10 in the first region R1, and stress tends to concentrate on the corner C1 and stress tends to increase. Accordingly, the stress generated in the vibration region 22 on the side of the one end portion 22a becomes larger, and the overall deformation becomes larger. Therefore, as the deformation of the piezoelectric film 50 increases, the pressure detection signal can be increased, and the detection sensitivity can be improved. In addition, the angle C1 constituting the connecting portion between the separation slit 41 and the stress increase slit 42 may be an acute angle or an obtuse angle. Yes, even if set to a right angle. In the present embodiment described above, the part of the vibrating region 22 floating from the support 10 in the first region R1 forms the corner C1. Also, in the corner C1, stress tends to concentrate and stress tends to increase. Therefore, the deformation of the first region R1 in the vibration region 22 can be accelerated, and the piezoelectric detection signal can be increased. Therefore, the improvement of detection sensitivity can be aimed at, and the improvement of detection precision can be aimed at. However, in the vibrating region 22 supported by the cantilever as described above, one end portion 22 a supported by the support body 10 is supported by the support body 10 and is constrained. Therefore, the stress generated in the vibrating region 22 tends to be larger than that of the portion slightly deviated toward the inner edge side from the one end portion 22a. However, by forming the corner C1 in the vibration region 22 as described above, it is also possible to deviate the portion where the stress becomes the largest toward the one end portion 22a side. Therefore, even regarding this point, in this embodiment, the deformation of the entire vibration region 22 can be increased, and the detection sensitivity can be improved. (Modification of the first embodiment) A modification of the above-mentioned first embodiment will be described. In the first embodiment described above, the stress increasing slit 42 is extended along the extending direction of the separating slit 41 as shown in FIG. The method may be a bent shape. That is, the stress increasing slit 42 may be formed in a so-called wave shape. Furthermore, even if the stress increasing slit 42 may break the vibrator 20 due to excessive stress generated at the corner C1 where the stress increasing slit 42 is formed, the corner C1 has a curved shape having a curvature. also can. (Second Embodiment) The second embodiment will be described. Compared with the first embodiment, this embodiment changes the configuration of the deformation promoting structure. Regarding the rest, since it is the same as that of the first embodiment, description thereof will be omitted here. In this embodiment, as shown in FIG. 4, the stress increasing slit 42 is not formed in the vibrating region 22, and the separating slit 41 is formed to reach the corner of the floating region 21b. That is, the floating region 21b of the present embodiment is divided into four vibration regions 22 only by the separation slit 41 . Furthermore, a corner portion C2 is formed at one end portion 22 a of each vibration region 22 . In addition, in the present embodiment, the corner portion C2 corresponds to the deformation promoting structure. Specifically, in this embodiment, the opening end of the concave portion 10a in the support body 10 is located between the two ends of one end portion 22a of the vibration region 22, and the opening end is formed so that the opening end faces toward the supporting body. The outer edge side of the body 10 is recessed 10b. In addition, both ends of the one end 22a of the vibrating region 22, in other words, refer to the portion where the separation slit 41 reaches the one end 22a. And, the opening end of the recessed portion 10a is in a state of being formed with concavities and convexities by the recessed portion 10b in a direction along the opening end. Accordingly, one end portion 22a of the vibrating region 22 has a concavo-convex structure depending on the shape of the opening end of the recessed portion 10a, and the corner portion C2 is formed. In the present embodiment described above, since the vibration region 22 forms the corner C2 at the one end 22a, the stress of the one end 22a becomes large. Therefore, deformation near the corner C2 of one end portion 22a in the vibration region 22 can be promoted, and an increase in the piezoelectric detection signal can be achieved. Therefore, improvement of sensitivity can be aimed at. (Modification of the second embodiment) A modification of the above-mentioned second embodiment will be described. In the above-mentioned second embodiment, the corner portion C2 may be formed by forming a convex portion protruding from the opening end of the concave portion 10 a to the inner edge side of the support body 10 at the opening end of the concave portion 10 a. That is, in the above-mentioned second embodiment, if the corner portion C2 is formed at the one end portion 22a of the first region R1 among the vibration regions 22, the shape of the opening end side of the concave portion 10a can be appropriately changed. Furthermore, even in the second embodiment, as in the modified example of the above-mentioned first embodiment, if the stress generated at the corner C2 is too large and the vibrating part 20 may be damaged, the angle The part C2 may have a curved shape having a curvature. (Third Embodiment) The third embodiment will be described. Compared with the first embodiment, this embodiment changes the configuration of the deformation promoting structure. Regarding the rest, since it is the same as that of the first embodiment, description thereof will be omitted here. In this embodiment, as shown in FIG. 5 , the opening end of the concave portion 10 a of the support 10 is formed in a planar circular shape centering on the intersection point of the two separation slits 41 . Furthermore, the opening end of the concave portion 10 a is formed in the normal direction to intersect both ends in the extending direction of the stress increasing slit 42 . Therefore, both end portions on the side of the supporting region 21 a in the outer shape of the floating region in the vibrating region 22 are in a state of reaching the one end portion 22 a. Furthermore, the vibrating region 22 has a shape in which one end portion 22 a expands toward the opposite side to the other end portion 22 b with respect to a virtual line K1 connecting both end portions. In this embodiment, since the opening end of the concave portion 10a is formed in a planar circular shape, one end portion 22a of the vibration region 22 is formed in an arc shape. Therefore, each vibration area 22 of this embodiment is like the above-mentioned first embodiment, and the opening end of the concave portion 10a is formed in a rectangular shape. Compared with the case where one end portion 22a coincides with the imaginary line K1, the first area R1 becomes smaller. big. In addition, the outline line of the vibration region 22 refers to the line constituting the end portion of the outline of the vibration region 22 . Furthermore, the outer contour of the floating region in the vibrating region 22 refers to the outer contour of the vibrating region 22 excluding the part supported by the one end 22 a of the support 10 . Furthermore, in the present embodiment, the shape of the one end portion 22a corresponds to the deformation promoting structure. In the present embodiment described above, since the vibration region 22 has a shape in which the one end portion 22a expands toward the opposite side from the other end portion 22b from the imaginary line K1, the opening end of the concave portion 10a is formed in a rectangular shape. In such a case, the first region R1 may be enlarged. Furthermore, as described above, since the vibration area 22 is easily deformed slightly inside the one end portion 22a, the deformation in the vicinity of the virtual line K1 can also be increased. That is, it is also possible to increase the deformation of the portion serving as the one end portion 22a when the opening end of the recessed portion 10a is formed in a rectangular shape. Therefore, the pressure detection signal can be increased, and the sensitivity can be improved. (Fourth Embodiment) The fourth embodiment will be described. Compared with the third embodiment, this embodiment changes the configuration of the deformation promoting structure. Regarding the rest, since it is the same as that of the third embodiment, description thereof will be omitted here. In this embodiment, as shown in FIG. 6 , no stress increasing slit 42 is formed in the vibrating portion 20 . Furthermore, the opening end of the concave portion 10a formed in the support body 10 is formed in a planar circular shape centering on the intersection point of the two separation slits 41 . However, in this embodiment, the opening end of the recessed portion 10a is formed so as not to intersect with the separation slit 41 . That is, both end portions on the side of the supporting region 21 a in the outline of the floating region in the vibrating region 22 respectively end in the floating region. Therefore, in the present embodiment, the vibrating regions 22 are in a state where the parts on the one end 22a side are connected to each other. Further, the vibrating region 22 has a shape in which the one end portion 22a expands toward the opposite side to the other end portion 22b with respect to the imaginary line K2 connecting the two end portions. Therefore, each vibration area 22 of this embodiment is like the above-mentioned first embodiment, the opening end of the recessed part 10a is made into a rectangular shape, and the first area R1 becomes larger than the case where one end part coincides with the imaginary line K2. . In addition, in this embodiment, the shape of the one end part 22a corresponds to a deformation|transformation promotion structure. In the present embodiment described above, since the vibrating region 22 has a shape in which the one end portion 22a expands toward the opposite side of the other end portion 22b from the imaginary line K2, the opening end of the concave portion 10a is formed in a rectangular shape. In such a case, the first region R1 may be enlarged. Therefore, the same effect as that of the above-mentioned third embodiment can be obtained. (Fifth Embodiment) The fifth embodiment will be described. Compared with the first embodiment, this embodiment changes the configuration of the deformation promoting structure. Regarding the rest, since it is the same as that of the first embodiment, description thereof will be omitted here. In the present embodiment, as shown in FIG. 7 , in the second region R2, an electrode is formed that penetrates the upper electrode film 63, the upper piezoelectric film 52, the intermediate electrode film 62, and the lower piezoelectric film 51 and reaches the lower electrode film 61. The hole portion 81. Further, a hard film 82 having a higher Young's modulus than that of the piezoelectric film 50 is embedded in the hole portion 81 . In this embodiment, the hard film 82 is made of the same material as that of the first and second electrode parts 71 and 72 or the electrode film 60 . In addition, since the lower electrode film 61, the intermediate electrode film 62, and the upper electrode film 63 formed in the second region R2 are not electrically connected to the first and second electrode portions 71, 72, even if they are connected to each other, they are not electrically connected. There will be problems. Furthermore, in the present embodiment, the hard film 82 corresponds to the deformation-promoting structure. In addition, in this embodiment, the holes 81 and the hard film 82 are densely formed on the other end 22b side in the second region R2 compared to the first region R1 side. More specifically, in the present embodiment, the hard film 82 is formed in the second region R2 so as to gradually become denser from the first region R1 side toward the other end portion 22b side. As described above, in this embodiment, the hard film 82 is arranged in the second region R2. Therefore, when the sound pressure is applied, the second region R2 becomes harder to deform than when the hard film 82 is not disposed in the second region R2. Therefore, in the present embodiment, stress tends to concentrate on the first region R1, and the first region R1 tends to deform. According to this, the pressure detection signal can be increased, and the brightness sensitivity can be improved. Furthermore, in this embodiment, the hard film 82 is formed more densely on the side of the other end portion 22b than on the side of the first region R1 among the sides of the second region R2. Therefore, for example, the deformation of the first region R1 can be hindered by the hard film 82 compared to the case where the other end portion 22b side is formed more sparsely than the second region R2 side on the first region R1 side. Therefore, the effect of disposing the hard film 82 can be easily obtained. Furthermore, the hard film 82 is made of the same material as that of the first and second electrode parts 71 and 72 or the electrode film 60 . Therefore, for example, the hard film 82 can be formed simultaneously with the formation of the first and second through-hole electrodes 71b and 72b, and the manufacturing process can be simplified. (Sixth Embodiment) The sixth embodiment will be described. In this embodiment, a temperature detection element and a heating element are provided in each vibration region 22 compared to the first embodiment. Regarding the others, since they are the same as those of the first embodiment, descriptions are omitted here. First, the above-mentioned piezoelectric element 1 may be used in a state of being exposed to outside air or a state of being exposed to a specific oil. In this case, when the operating environment is low temperature, the vibration area 22 may be frozen due to exposure to outside air, or the viscosity of the oil in contact with the vibration area 22 may decrease, thereby hindering the vibration of the vibration area 22 . That is, when the above-mentioned piezoelectric element 1 is used in a low-temperature environment, the detection sensitivity may decrease. Therefore, in this embodiment, as shown in FIG. 8 , a temperature detection element 91 that outputs a temperature detection signal corresponding to the temperature and a heating element 92 that generates heat by being energized are formed in each vibration region 22 . In this embodiment, in each vibration region 22, the temperature detection element 91 and the heating element 92 are formed in the second region R2. More specifically, in this embodiment, the intermediate electrode film 62 is not formed in the second region R2. Furthermore, the temperature detecting element 91 and the heating element 92 are formed in a portion between the lower piezoelectric film 51 and the upper piezoelectric film 52 . That is, the temperature detecting element 91 and the heating element 92 are formed on the portion where the intermediate electrode film 62 in the above-mentioned first embodiment is formed. In addition, although not shown in particular, lead-out wiring electrically connected to the temperature detection element 91 and the heating element 92 is formed in the 1st region R1 and the supporting region 21a. Furthermore, the support region 21a forms an electrode portion electrically connected to the pull-out wiring. Accordingly, the temperature detection element 91 and the heating element 92 are connected to an external circuit. In addition, in the second region R2, the lower electrode film 61 and the upper electrode film 63 are formed to sandwich the piezoelectric film 50 as in the first embodiment described above. Furthermore, the temperature detection element 91 is constituted by using a temperature-sensitive resistor whose resistance value changes according to temperature, and the heating element 92 is constituted by using a heat-generating resistor which generates heat when energized. In this embodiment, the temperature detecting element 91 and the heating element 92 are made of platinum, for example. Furthermore, in the present embodiment, the temperature detecting element 91 and the heating element 92 correspond to the lifting portion. In the present embodiment described above, the temperature detecting element 91 and the heating element 92 are formed. Therefore, by adjusting the amount of energization to the heating element 92 based on the temperature detected by the temperature detecting element 91, the temperature of the vibrating region 22 can be maintained at a specific temperature. Therefore, it is possible to suppress freezing of the vibrating region 22 or a decrease in the viscosity of oil in contact with the vibrating region 22 , and to suppress a decrease in detection sensitivity. That is, it is possible to suppress a decrease in detection accuracy. Furthermore, the temperature detecting element 91 and the heating element 92 are formed in the second region R2. Therefore, compared with the case where the temperature detecting element 91 and the heating element 92 are formed in the first region R1, the portion where the intermediate electrode film 62 for extracting charges is disposed can be suppressed from being reduced, and the second region R2 can be effectively used. Furthermore, the temperature detecting element 91 and the heating element 92 are formed between the lower piezoelectric film 51 and the upper piezoelectric film 52 and are not exposed to outside air. Therefore, the environmental resistance of the temperature detection element 91 and the heating element 92 can be improved. Moreover, the temperature detecting element 91 and the heating element 92 are formed between the lower piezoelectric film 51 and the upper piezoelectric film 52, and the lower electrode film 61 and the upper electrode film 63 are formed as pinching piezoelectric elements as in the first embodiment. Film 50. Therefore, the environmental resistance against the piezoelectric film 50 may also be lowered. (Seventh Embodiment) The seventh embodiment will be described. In this embodiment, a plurality of sensing units 30 are formed, compared to the first embodiment. Regarding the others, since they are the same as those of the first embodiment, descriptions are omitted here. First, in the above-mentioned piezoelectric element 1, there is a possibility that the sound pressure may leak through the part that divides each vibration 22 (that is, the separation gap 41 or the stress increase gap 42), and the sound pressure of the separation gap 41 that enters in parallel with the acoustic impedance The resistance is easily reduced. Furthermore, since the low-frequency attenuation frequency increases due to the decrease in acoustic resistance, the sensitivity at low frequencies tends to decrease. Therefore, in this embodiment, as shown in FIG. 9 , the piezoelectric element 1 is constituted by a plurality of sensing parts 30 (that is, the floating region 21 b ) are integrated. Specifically, in the support body 10 of the present embodiment, four concave portions 10 a for floating the inner edge side of the vibrating portion 20 are formed. That is, four floating regions 21b are formed in the vibrator 20 of the present embodiment. Furthermore, each of the floating regions 21b is separated into four vibration regions 22 by forming the separation slits 41, respectively. In addition, in this embodiment, the stress increasing slit 42 is not formed. That is, in this embodiment, the separation slit 41 is formed to reach the corner of the floating region 21b. Furthermore, in the present embodiment, the vibration regions 22 of the respective sensors 30 are configured to have different resonance frequencies. In this embodiment, each vibrating area 22 in each sensing portion 30 is formed to have a length between one end portion 22a and the other end portion 22b, that is, the length of the beams is different. Therefore, as shown in FIG. 10 , the relationship between the frequency and the sensitivity of each sensing unit 30 becomes a different waveform for each sensing unit 30 . In addition, in this embodiment, the structure of the vibration area|region 22 with which resonance frequency differs corresponds to a lifting part. In the present embodiment described above, the piezoelectric element 1 is constituted by forming a plurality of sensing parts 30 . Furthermore, since the resonance frequency of each sensing unit 30 is set to a different value, the relationship between the frequency and the sensitivity becomes a different waveform. Therefore, with the piezoelectric element 1 of the present embodiment, by appropriately switching the vibration region 22 used for sound pressure detection, the frequency at which the detection sensitivity becomes high can be widened, and the noise such as road noise can be improved. Detection sensitivity of low frequency noise. Furthermore, the piezoelectric element 1 of this embodiment forms a plurality of sensing parts 30 , and the plurality of sensing parts 30 are supported by a common support body 10 to form a configuration. Therefore, it is easier to narrow the interval between adjacent sensing portions 30 , for example, compared to a case where a plurality of piezoelectric elements 1 in which one sensing portion 30 is formed is arranged. Here, for example, in a sound wave of 20 kHz, the wavelength is about 17 mm. Therefore, by setting the plurality of sensing units 30 supported by the common support body 10 as in the present embodiment, it is easy to arrange the respective sensors 30 even at intervals considerably narrower than the wavelength. Therefore, it is possible to suppress attenuation of the sound pressure between the respective sensing units 30, and it is also possible to suppress a reduction in the detection sensitivity of the sound pressure in the high-frequency region which is easily attenuated. In addition, each vibration region 22 has a different resonance frequency by setting the length between the one end portion 22a and the other end portion 22b to be different. Here, each vibration region 22 is formed by etching the floating region 21b or the like. In this case, the length between the one end portion 22a and the other end portion 22b can be easily changed by changing a mask such as etching. Therefore, according to this embodiment, the complexity of the manufacturing process can be suppressed, and the plurality of vibration regions 22 having different resonance frequencies can be easily formed. (Eighth Embodiment) The eighth embodiment will be described. In this embodiment, a protective film is disposed on the concave portion 10a of the support 10, compared to the first embodiment. Regarding the others, since they are the same as those of the first embodiment, descriptions are omitted here. First, the above-mentioned piezoelectric element 1 is formed in the concave portion 10a of the support 10 by etching. For example, the concave portion 10 a is formed by repeating the process of wet etching the support 10 , the process of forming a surface protection film for protecting the wet-etched wall, and the process of dry etching to further excavate the wet-etched wall surface. In this case, the concave portion 10a is likely to be in a state where fine unevenness is formed on the side surface. Therefore, in the piezoelectric element 1 as described above, the detection sensitivity may be lowered due to the generation of turbulent flow due to the fine unevenness formed on the side surface of the concave portion 10a. Therefore, in the present embodiment, as shown in FIG. 11 , a protective film 100 is formed on the support 10, and the protective film 100 embeds fine unevenness in the portion that becomes the side surface 10c of the concave portion 10a, and is in contact with the concave portion. The exposed surface 100a on the opposite side to the 10a is flatter than the side surface 10c of the concave portion 10a. Furthermore, in this embodiment, the protective film 100 is also formed on the part of each vibrating region 22 on the side of the support body 10 and on the part of each vibrating region 22 where adjacent vibrating regions 22 face each other. In this embodiment, the protective film 100 is made of a material having water repellency and oil repellency, such as fluoropolymer, so that foreign matter such as water droplets or oil droplets is difficult to adhere. Furthermore, the protective film 100 is arranged on the portion including the side surface 10c of the concave portion 10a by a coating method, a dipping method, a vapor deposition method, or the like. Accordingly, the protective film 100 is arranged in a state in which the exposed surface 100a is flatter than the side surface 10c of the concave portion 10a. Furthermore, it is preferable that the protective film 100 is made of a material that hardly hinders the vibration of the vibration region 22 . For example, when the piezoelectric film 50 is made of scandium aluminum nitride, the Young's modulus becomes about 250 GPa. Therefore, the protective film 100 preferably uses a Young's modulus of about 1/500 or less, and preferably uses a Young's modulus of about 0.1 to 0.5 GPa. In the present embodiment described above, the protective film 100 is disposed on the support 10, the protective film is attached to the side surface 10c of the concave portion 10a, and the exposed surface 10a is flatter than the side surface 10c of the concave portion 10a. Therefore, generation of a turbulent flow in the concave portion 10a can be suppressed, and a reduction in detection accuracy can be suppressed. Furthermore, the protective film 100 is also formed on the vibrating region 22, and is made of a material having water repellency and oil repellency. Therefore, it is possible to suppress foreign matter such as water from adhering to the protective film 100 , and it is also possible to suppress the occurrence of turbulent flow due to the foreign matter. Furthermore, the protective film 100 is made of a material that hardly blocks the vibration of the vibration region 22 . Therefore, by arranging the protective film 100, it is possible to suppress the vibration region 22 from being difficult to vibrate, and to suppress a decrease in detection sensitivity. (Ninth Embodiment) The ninth embodiment will be described. In this embodiment, the shape of the support body 10 is changed from that of the first embodiment. Regarding the others, since they are the same as those of the first embodiment, descriptions are omitted here. In this embodiment, the support substrate 11 is constituted by a silicon substrate as described above, and has one surface 11a on the insulating film 12 side and the other surface 11b on the opposite side to the one surface 11a. Furthermore, as shown in FIG. 12 , the supporting substrate 11 has a structure in which the side surface 11c constituting the concave portion 10a is recessed. In addition, in this embodiment, the recessed structure of the side surface 11c corresponds to a lifting part. Specifically, the side surface 11c of the support substrate 11 has the following configuration. First, let the opening on the side opposite to the insulating film 12 be the first opening 11d, and let the opening on the side of the insulating film 12 be the second opening 11e. In this case, the side surface 11c is composed of a first tapered portion 11f whose side surface is cut away from the first opening portion 11d toward the second opening portion 11e side, and a first tapered portion whose side surface is cut away from the second opening portion 11e toward the first opening portion 11d side. The structure of 2 oblique taper parts 11g connection. That is, the side surface 11c of the support substrate 11 has a recessed structure in which a part between the first opening 11d and the second opening 11e is recessed with respect to the imaginary line K3 connecting the first opening 11d and the second opening 11e. . In this embodiment, the support substrate 11 has one surface 11a and the other surface 11b as a (100) plane, and the first opening 11d and the second opening 11e are rectangular. Moreover, 11 f of 1st tapered parts and 11 g of 2nd tapered parts are each made into (111) planes. In addition, the piezoelectric element 1 of this embodiment does not form the stress increasing slit 42 as in the above-mentioned seventh embodiment. That is, in this embodiment, the separation slit 41 is formed to reach the corner of the floating region 21b. In each embodiment described later, an example in which the stress increasing slit 42 is not formed will be described. However, even in this embodiment and each embodiment described later, the stress increasing slit 42 may be appropriately formed. The above is the configuration of the piezoelectric element 1 in this embodiment. Next, a method of manufacturing the piezoelectric element 1 described above will be described with reference to FIGS. 13A and 13B . First, as shown in FIG. 13A , an insulating film 12 is prepared on a support substrate 11 , and a piezoelectric film 50 , an electrode film 60 , a first electrode portion 71 , and a second electrode portion 72 are formed on the insulating film 12 . In addition, the support substrate 11 is made of a silicon substrate, and one surface 11a and the other surface 11b are set as (100) planes. In addition, the piezoelectric film 50, the electrode film 60, the 1st electrode part 71, the 2nd electrode part 72, etc. are comprised by performing a general sputtering method, an etching method, etc. suitably. Then, anisotropic dry etching is performed so as to penetrate the insulating film 12 from the other surface 11 b of the supporting substrate 11 using a mask not shown. In addition, after the completion of this process, the side surface 11c of the support substrate 11 coincides with the imaginary line K3 connecting the first opening 11d and the second opening 11e. Next, as shown in FIG. 13B , by using an unillustrated mask, anisotropic wet etching is performed on the side surface 11c of the support substrate 11 to form a concave structure on the side surface 11c of the support substrate 11 . Specifically, the supporting substrate 11 is made of a silicon substrate, and one side 11a and the other side 11b are set as (100) planes. Therefore, by performing anisotropic wet etching, the first tapered portion 11f and the second tapered portion 11g constituted by the (110) plane with the slowest etching rate among the plane orientations of silicon are formed. Thereafter, although not particularly shown, the piezoelectric element 1 shown in FIG. 12 is manufactured by appropriately forming the separation slit 41 . However, the piezoelectric element 1 as described above is accommodated in a case 130 as shown in FIG. 14 to constitute a piezoelectric device. Specifically, the casing 130 has a printed circuit board 131 on which the piezoelectric element 1 and the circuit board 120 for processing fixed signals, etc. are mounted, and a cover portion fixed to the printed circuit board 131 to house the piezoelectric element 1 and the circuit board 120 132. In addition, in this embodiment, the printed circuit board 131 corresponds to the member to be mounted. Although not shown in particular, the printed circuit board 131 has a configuration in which wiring portions and via-hole electrodes are appropriately formed, and electronic components such as capacitors (not shown) are also mounted as necessary. The piezoelectric element 1 is mounted on the other surface 11b of the support substrate 11 on the one surface 131a of the printed circuit board 131 via the bonding member 2 such as an adhesive. The circuit board 120 is mounted on one surface 131 a of the printed circuit board 131 via a bonding member 121 made of a conductive member. Furthermore, the pad portion 72 c of the piezoelectric element 1 and the circuit board 120 are electrically connected via the bonding wire 133 . In addition, the pad portion 71c of the piezoelectric element 1 is electrically connected to the circuit board 120 through the bonding wire 133 in a cross section different from that in FIG. 14 . The cover portion 132 is made of metal, plastic, resin, etc., and is fixed to the printed circuit board 131 through a bonding member such as an adhesive (not shown) so as to house the piezoelectric element 1 and the circuit board 120 . Furthermore, in this embodiment, a through hole 132a is formed in a portion of the cover portion 132 facing the sensing portion 30 . In such a piezoelectric device, by applying sound pressure (ie, pressure) to the sensing portion 30 from the through hole 132 a through the space between the sensing portion 30 and the cover portion 132 , the sound pressure is detected. According to the present embodiment described above, the support substrate 11 is formed as a recessed structure. Therefore, when the piezoelectric device shown in FIG. 14 is configured, the detection accuracy can be improved. That is, in the housing 130, the space between the portion where the through-hole 132a for introducing the sound pressure is formed and the sensing unit 30 is defined as the pressure-receiving surface space S1. In addition, the space located on the opposite side to the pressure receiving surface space S1 including the pinch sensing part 30, and the space continuous with this space without interposing the separation slit 41 are defined as the back space S2. In addition, the rear space S2 is a space inside the casing 130, and may also be called a space different from the pressure receiving surface space S1, and may also be called a space except the pressure receiving surface space S1. In other words, the pressure-receiving surface space S1 may also be referred to as a space on the surface of the vibration region 22 that is formed on the side of the through-hole 132 a of the casing 130 by the impact pressure. The back space S2 is also referred to as a space formed on the side opposite to the through-hole 132 a side of the housing 130 by the impact of the vibration region 22 . In this case, when the low-frequency attenuation frequency in such a piezoelectric device is Rg and the sound compliance of the rear space S2 is Cb, It is represented by 1/(2π×Rg×Cb). Therefore, in order to reduce the low-frequency attenuation frequency, it is sufficient to increase the acoustic resistance Rg or the acoustic compliance Cb of the rear space S2. Furthermore, in this embodiment, since the recessed structure is formed on the support substrate 11, the sound compliance can be increased by increasing the space of the back space S2. Therefore, in the piezoelectric device of this embodiment, by reducing the low-frequency attenuation frequency, the detection sensitivity in the low-frequency band can be improved, and the detection accuracy can be improved. Furthermore, the sensitivity in such a piezoelectric device is expressed as 1/{(1/Cm)+( 1/Cb)} said. Therefore, in order to increase the sensitivity, it is sufficient to increase the acoustic compliance Cb, which is proportional to the size of the back space S2. Furthermore, in this embodiment, since the recessed structure is formed on the support substrate 11, the capacitance can be increased by increasing the space of the rear surface space S2. Therefore, in the piezoelectric device of this embodiment, the detection accuracy can be improved by increasing the sensitivity. Specifically, as shown in FIG. 15 , by increasing the acoustic compliance Cb of the rear space S2 , it is possible to suppress a decrease in sensitivity. In this case, the sensitivity drops sharply when Cb/Cm is 2 or less, but the drop in sensitivity can be moderated by forming the recessed structure. That is, forming the recessed structure on the support substrate 11 in this way is particularly effective for a piezoelectric device in which Cb/Cm is 2 or less. In addition, Fig. 15 is based on the case where Cb/Cm is extremely large. In addition, the support substrate 11 is configured so that the side surface 11c has the first tapered portion 11f and the second tapered portion 11g. Therefore, for example, compared with the case where the side surface 11c is composed of only the second tapered portion 11g, the bonding area between the other surface 11b of the support substrate 11 and the printed circuit board 131 can be increased. That is, according to this embodiment, it is possible to suppress the decrease of the adhesiveness with respect to the printed circuit board 131 and to improve the detection accuracy. In addition, the side surface 11c is constituted by only the second tapered portion 11g, in other words, the configuration in which the second tapered portion 11g is formed up to the first opening 11d. Furthermore, the side surface 11c of the support substrate 11 is formed by anisotropic wet etching to form a (111) plane, thereby suppressing shape deviation. Therefore, it is possible to suppress variations in stress occurring in the vibrating region 22 and to suppress variations in detection accuracy. In addition, in this embodiment, although the 1st opening part 11d and the 2nd opening part 11e were demonstrated as rectangular shape, the shape of the 1st opening part 11d and the 2nd opening part 11e can be changed suitably. For example, even if one surface 11a and the other surface 11b of the support substrate 11 are formed as a (110) surface, the first opening 11d and the second opening 11e may be octagonal. (Tenth Embodiment) The tenth embodiment will be described. In this embodiment, compared with the ninth embodiment, the arrangement of the piezoelectric elements 1 in the piezoelectric device is changed. Regarding the others, since they are the same as those of the ninth embodiment, explanations are omitted here. In this embodiment, the piezoelectric element 1 is constituted by forming eight pad portions 701 to 708 on the upper piezoelectric film 52 as shown in FIG. 16 . Specifically, the two pads are set as connection pads 701 and 702 electrically connected to the sensing part 30 . In addition, the connection pads 701, 702 correspond to the pads 71c, 72c in the above-mentioned first embodiment. The remaining 6 pads are set as dummy pads 703 - 708 not electrically connected to the sensing unit 30 . Furthermore, the eight pads 701 to 708 are arranged symmetrically with respect to the center of the piezoelectric element 1 when viewed from the normal direction. That is, the eight pads 701 to 708 are arranged symmetrically with respect to the center of the surface parallel to the surface direction of the surface 11 a of the support substrate 11 . In other words, the eight pads 701 to 708 are arranged symmetrically with respect to the center of the plane parallel to the plane direction of the printed board 131 in the piezoelectric element 1 when the piezoelectric element 1 is mounted on the printed board 131 . Furthermore, the connection pads 701, 702 are arranged close to each other. The above is the configuration of the piezoelectric element 1 in this embodiment. Further, the piezoelectric device is constituted by flip-chip mounting the piezoelectric element 1 on the printed circuit board 131 as shown in FIG. 17 . Specifically, the piezoelectric element 1 is connected to the pads 701 to 708 via the bonding member 3 formed of a conductive member of the printed circuit board 131 such as solder. In addition, the piezoelectric element 1 is arranged on the printed circuit board 131 so that the connection pads 701 and 702 are located on the side of the circuit board 120 . Furthermore, the piezoelectric element 1 is electrically connected to the circuit board 120 via the connection pads 701 , 702 formed on the wiring portion 131 c of the printed circuit board 131 . In addition, the wiring part 131c of this embodiment is formed in such a way that the pad parts 701, 702 and the circuit board 120 are connected in the shortest way. Furthermore, in this embodiment, all the pads 701 - 708 are electrically connected to the printed substrate 131 . That is, all the pads 701 to 708 are not in a floating state. Furthermore, in this embodiment, the through hole 131b is formed in the printed circuit board 131 . Therefore, in the present embodiment, the sound pressure is detected when the sound pressure is applied to the sensing part 30 through the through hole 131b. Therefore, in this embodiment, in the housing 130, the space between the part where the through hole 131b is formed and the sensing part 30 becomes the pressure receiving surface space S1, and the sensing part 30 is sandwiched between the pressure receiving surface space S1. The space on the opposite side becomes back space S2. In addition, the back space S2 is located in the space with the pressure receiving surface space S1 including the pinch sensor part 30 as mentioned above, and it can also be called the space continuous with this space without interposing the separation slit 41. Therefore, in the piezoelectric device shown in FIG. 17 , the space including the pinch sensing unit 30 on the opposite side to the pressure receiving surface space S1 and the piezoelectric element 1 continuous with the space without the separation slit 41 are formed. The space of the surrounding space. According to the present embodiment described above, the reduction of the detection accuracy can be suppressed by reducing the parasitic capacitance. That is, as shown in FIG. 18 , in the piezoelectric device, when the capacitance of the entire sensing unit 30 is Co and the parasitic capacitance formed between the piezoelectric element 1 and the circuit board 120 is Cp, the piezoelectric device becomes A parasitic capacitance Cp is arranged between the capacitor Co and the circuit board 120 . Furthermore, when the parasitic capacitance Cp is large, the ratio of charges flowing from the sensing unit 30 to the parasitic capacitance Cp increases, and detection accuracy decreases. In addition, the parasitic capacitance Cp is the sum of the capacitance of the part connecting the piezoelectric element 1 (that is, the sensing part 30 ) and the circuit board 120 , or the capacitance generated inside the circuit board 120 . Therefore, the piezoelectric element 1 of the present embodiment is flip-chip mounted on the printed circuit board 131 , and connected to the circuit board 120 through the wiring portion 131 c formed on the printed circuit board 131 . Furthermore, the piezoelectric element 1 is disposed on the printed circuit board 131 such that the connection pads 701 and 702 are on the circuit board 120 side. Therefore, compared with the case where the piezoelectric element 1 and the circuit board 120 are connected by the bonding wire 133, the wiring part 131c which connects the piezoelectric element 1 and the circuit board 120 can be shortened easily. Therefore, it is possible to reduce the parasitic capacitance Cp, and suppress a decrease in detection accuracy. Furthermore, in this embodiment, the piezoelectric element 1 is flip-chip mounted on the printed circuit board 131 , and the through hole 131 b is formed in the printed circuit board 131 . Therefore, compared with the case where the through hole 132a is formed in the cover portion 132 as in the ninth embodiment, the pressure receiving surface space S1 can be reduced, and the air spring in the pressure receiving surface space S1 can be enlarged. Therefore, dispersion of the sound pressure induced from the through-hole 132a can be suppressed, and detection accuracy can be improved by improving detection accuracy. In addition, in this embodiment, like the above-mentioned ninth embodiment, the through-hole 132a may be formed in the cover portion 132 . Even with such a piezoelectric device, it is difficult to reduce the space S1 on the pressure receiving surface, but it is possible to reduce the parasitic capacitance Cp. Furthermore, in this embodiment, the pads 701 to 708 are arranged symmetrically with respect to the center of the piezoelectric element 1 . Therefore, when the piezoelectric element 1 is flip-chip mounted, the piezoelectric element 1 can be suppressed from inclining to the printed substrate 131 . In addition, since the dummy pad portions 703 to 708 are connected to the sensing portion 30 , they may be bonded to the printed circuit board 131 with an adhesive or the like. However, by connecting the dummy pads 703 to 708 to the printed circuit board 131 with a bonding member 3 such as solder, it is also possible to maintain the dummy pads 703 to 708 at a specific potential. Therefore, compared with the case where the dummy pads 703 to 708 are in a floating state, generation of unnecessary noise can be suppressed. Furthermore, by arranging the same material between the pads 701 to 708 and the printed circuit board 131 , it is possible to make the piezoelectric element 1 difficult to tilt. Therefore, it is preferable to arrange the same bonding member 3 between the dummy pad portions 703 to 708 and the printed circuit board 131 . Furthermore, it is also possible to suppress the inclination of the piezoelectric element 1 by disposing the underfill instead of disposing the dummy pad portions 703 to 708 . In addition, in this embodiment, although the inclination of the piezoelectric element 1 can be suppressed, for example, the dummy pad parts 703-708 etc. are not arrange|positioned. As such a piezoelectric device, although the piezoelectric element 1 tends to tilt, it is possible to reduce the parasitic capacitance Rp. (Eleventh Embodiment) The eleventh embodiment will be described. In this embodiment, compared with the first embodiment, the shape of the intermediate electrode film 62 is changed. Regarding the others, since they are the same as those of the first embodiment, descriptions are omitted here. In this embodiment, as shown in FIG. 19, the intermediate electrode film 62 is divided into a first intermediate electrode film 62a formed in the first region R1, and a second intermediate electrode film 62a formed in the second region R2. 62b. Furthermore, the first intermediate electrode film 62 a is further divided into a complex charge region 620 and dummy regions 624 and 625 . In this embodiment, the complex charge region 620 is set as three charge regions 621-623. Therefore, in each vibration region 22 of the piezoelectric element 1 , capacitance is formed between the complex charge region 620 and the lower electrode film 61 and upper electrode film 63 facing the charge region 620 . In addition, in FIG. 19, although the shape of the intermediate electrode film 62 located in the vibration region 22 is shown, the intermediate electrode film 62 is also suitably extended and provided in the support region 21a. Furthermore, in this embodiment, the intermediate electrode film 62 divided into the plurality of charge regions 621 to 623 corresponds to the lifting portion. The complex charge regions 621 to 623 are each set to have the same area. That is, the dummy regions 624 and 625 are configured so that the respective charge regions 621 to 623 have the same area. In addition, although not shown in particular, the plurality of charge regions 621 to 623 are connected in series to each other via unshown wiring or the like at portions located on the support region 21 a. Therefore, in each vibration region 22 , a plurality of capacitors are connected in series. In contrast, the dummy regions 624 and 625 are not connected to the charge regions 621 to 623 and are in a floating state. Although not particularly shown, the lower electrode film 61 and the upper electrode film 63 are formed to face the first intermediate electrode film 62a and the second intermediate electrode film 62b, respectively. According to the present embodiment described above, the first intermediate electrode film 62a is divided into a plurality of charge regions 621-623. Furthermore, the plurality of charge regions 621 to 623 are connected in series. Therefore, a plurality of capacitances are connected in series in one first region R1, and detection sensitivity can be improved by increasing the capacitance. Furthermore, the complex charge regions 621 to 623 are set to have the same area. Therefore, the complex capacitances constituting one first region R1 are equal to each other. Therefore, it is possible to suppress the generation of noise between the respective capacitors, and it is possible to suppress the reduction of the detection accuracy. In addition, in the present embodiment, an example in which the first intermediate electrode film 62a is divided into three charge regions 621 to 623 is described, but there may be two charge regions 621 to 623, or even four or more charge regions. The plural of is also available. Also, in this embodiment, an example in which the first intermediate electrode film 62a is divided into the plurality of charge regions 621 to 623 is described, but the lower electrode film 61 and the upper electrode film 63 may be divided into dummy regions. In addition, the same effect can be obtained even if the lower electrode film 61 and the upper electrode film 63 are divided into plural charge regions and dummy regions. However, the intermediate electrode film 62 is disposed between the lower electrode film 61 and the upper electrode film 63 as described above, and when the intermediate electrode film 62 is divided, only the intermediate electrode film 62 can be divided, so that the structure can be simplified. (Modification of Eleventh Embodiment) A modification of the eleventh embodiment will be described. In the eleventh embodiment described above, as shown in FIG. 20 , the charge regions 621 and 623 may not be rectangular. That is, as long as the dummy regions 624 and 625 are equal to the three charge regions 621 to 623, the formed positions and shapes can be appropriately changed. Furthermore, if the areas of the three charge regions 621 to 623 are equal, the dummy regions 624 and 625 may not be formed. (Twelfth Embodiment) The twelfth embodiment will be described. Compared with the first embodiment, this embodiment is a mode in which the divisions of the first region R1 and the second region R2 are defined. Regarding the others, since they are the same as those of the first embodiment, descriptions are omitted here. First, in the piezoelectric element 1 as described above, when a sound pressure is applied to the sensing portion 30, the stress distribution shown in FIG. 21 is obtained. Specifically, the stress tends to be highest in the vicinity of the central portion on the side of the one end portion 22a, and gradually decreases toward the side of the other end portion 22b. Therefore, in this embodiment, as shown in FIG. 22 , the first region R1 and the second region R2 are divided according to the stress distribution. Hereinafter, description will be given on the mode of division of the first region R1 and the second region R2 in this embodiment. In addition, the partitioning method in this embodiment is particularly effective when expressing the sensitivity output as a voltage. First, in order to increase the sensitivity of the piezoelectric element 1, it is only necessary to increase the electrostatic energy E generated in the first region R1. Here, as shown in FIG. 23 , the direction along one end 22 a of the vibration region 22 is referred to as the Y direction, and the direction perpendicular to the Y direction is referred to as the X direction. Furthermore, in the plurality of minute virtual regions M divided into the vibrating region 22 along the X direction, the capacitance of the virtual region M is C, and the average value of the stress generated in the virtual region M is σ. Furthermore, the electrostatic energy E is represented by 1/2×C×V 2 when the voltage generated in the virtual region M is V. In addition, the generated voltage V is proportional to the generated stress σ. Therefore, in this embodiment, as shown in FIG. 23 and FIG. 24 , the area where C× σ2 of each virtual area M becomes the largest is calculated, and the boundary line connecting the largest areas of each virtual area M is used to divide the first 1 area R1 and 2nd area R2. In this case, as shown in FIG. 24, the first region and the second region R2 may be divided by using the calculated line connecting the calculated values as the boundary line, and even if the approximate line based on the calculated line is used as the boundary line to divide the second region. The first region R1 and the second region R2 are also acceptable. In addition, in this embodiment, the form of division of the 1st area|region R1 and the 2nd area|region R2 corresponds to a lifting part. 24 shows an example in which the length in the Y direction along one end 22 a of the vibration region 22 is 850 μm, and the length from the one end 22 a to the other end 22 b is 425 μm. In this case, the approximate formula is represented by Formula 1 below. (Formula 1) Y=-0.0011X 2 +1.0387X-41.657 According to the present embodiment described above, the first region R1 and the second region R2 are divided so that the electrostatic energy E of the first region R1 becomes higher. Therefore, the improvement of detection sensitivity can be aimed at, and the improvement of detection precision can be aimed at. (Modification of Twelfth Embodiment) A modification of the twelfth embodiment will be described. The first region R1 and the second region R2 may be divided as shown in FIG. 25 . That is, since the vibrating region 22 is set in a plane triangle shape, the triangle is divided by dividing the one end 22a into three equal parts, and by connecting the positions C of the centers of gravity of the three triangles and the two ends of the one end 22a The boundary line may be used to divide the first region R1 and the second region R2. Even if the first region R1 and the second region R2 are divided in this way, the region close to the approximate line of the twelfth embodiment is included, and the region where the electrostatic energy E becomes high by dividing the first region R1 and the second region R2 is included. Therefore, the improvement of detection sensitivity can be aimed at, and the improvement of detection precision can be aimed at. In addition, in the above-mentioned twelfth embodiment, an example in which the vibration region 22 has a planar triangular shape has been described, but the shape of the vibration region 22 can be appropriately changed. For example, the vibration region 22 may be formed in a planar rectangular shape, or may be formed in a planar fan shape. As these vibrating regions 22, even if the first region R1 and the second region R2 are divided in the same manner as the above-mentioned twelfth embodiment, the same effect as that of the above-mentioned twelfth embodiment can be obtained. (Thirteenth Embodiment) The thirteenth embodiment will be described. Compared with the twelfth embodiment, this embodiment is a mode in which the divisions of the first region R1 and the second region R2 are defined. Regarding the others, since they are the same as those of the twelfth embodiment, explanations are omitted here. Hereinafter, description will be given on the mode of division of the first region R1 and the second region R2 in this embodiment. In addition, the partitioning method in this embodiment is particularly effective when expressing the sensitivity output by charge. In this embodiment, compared to the above-mentioned twelfth embodiment, the area of the virtual region M is defined as S, and the sum of the stresses generated in the virtual region M is defined as σsum. Also, 1/2×C×V 2 is proportional to S×(σsum/S) 2 . That is, 1/2×C×V 2 is proportional to the generated stress per unit area. Therefore, in this embodiment, as shown in FIG. 26 and FIG. 27 , the area where (σsum) 2 /S of each virtual area M becomes the largest is calculated, and the boundary line connecting the area where the virtual area M becomes the largest is calculated. The first area R1 and the second area R2 are divided. In this case, as shown in FIG. 27, the first region and the second region R2 may be divided by using the calculated line connecting the calculated values as the boundary line, and even if the approximate line based on the calculated line is used as the boundary line to divide the second region. The first region R1 and the second region R2 are also acceptable. 27 shows an example in which the length in the Y direction along one end 22 a of the vibration region 22 is 850 μm, and the length from the one end 22 a to the other end 22 b is 425 μm. In this case, the approximate formula is represented by Formula 2 below. (Formula 2) Y=241.11 In this way, even if the first region R1 and the second region R2 are divided according to the generated stress per unit area, the same effect as that of the above-mentioned twelfth embodiment can be obtained. (Fourteenth Embodiment) The fourteenth embodiment will be described. In this embodiment, each vibrating region 22 is warped and connected in parallel with respect to the first embodiment. Regarding the others, since they are the same as those of the first embodiment, descriptions are omitted here. In this embodiment, as shown in FIG. 28 , the piezoelectric element 1 is set in a state where the other end portion 22B (that is, the free end) is warped in each vibration region 22 . In the present embodiment, the other end portion 22b of each vibrating region 22 is arranged along the side opposite to the support substrate 11 side. In addition, the amount of warping in each vibrating region 22 is set to be the same, for example, warping is configured to be equal to or greater than the thickness of the piezoelectric film 50 . Furthermore, each vibrating region 22 has a bimorph structure in which the lower piezoelectric film 51 and the upper piezoelectric film 52 are laminated as described above, and the circuit configuration shown in FIG. 29 can be obtained. Furthermore, in the case of constituting a piezoelectric device, each electrode film 60 in each vibration region 22 is connected in parallel to the circuit board 120 . That is, in the present embodiment, the pressure detection signals are respectively output from the vibrating regions 22 to the circuit board 120 . In addition, in this embodiment, the vibrating regions 22 have a warped shape, and the point where the pressure detection signal is output from each vibrating region 22 to the circuit board 120 corresponds to a lifting portion. The above is the configuration of the piezoelectric element 1 in this embodiment. In addition, such a piezoelectric element 1 is manufactured as follows. That is, when the piezoelectric film 50 is formed on the insulator 12 by the sputtering method, a specific voltage is applied to the piezoelectric film 50 through the support substrate 11, so that a specific voltage is generated in the deposited piezoelectric film 50. residual stress. Thereafter, the vibration regions 22 are separated by forming separation slits 41 , and the other end 22 b of each vibration region 22 is warped by remaining stress, thereby manufacturing the piezoelectric element 1 shown in FIG. 28 . Such a piezoelectric element 1 outputs a piezoelectric detection signal from each vibration region 22 as described above. At this time, for example, as shown in FIG. 30A , when the sound pressure is applied to each vibration area 22 from a direction coincident with the normal direction, the deformation modes of each vibration area 22 are equal, and the output pressure from each vibration area 22 The detection signals are also equal. On the other hand, for example, as shown in FIG. 30B , when the sound pressure is applied to each vibration area 22 from a direction intersecting with the normal direction, the deformation mode of each vibration area 22 is different, and the sound pressure output from each vibration area 22 is different. The pressure detection signal is different. That is, the piezoelectric detection signal corresponding to the direction in which the sound pressure is applied from each vibration area 22 is output. Therefore, also in the piezoelectric element 1 of this embodiment, it is possible to detect the direction in which the sound pressure is applied. That is, the piezoelectric element 1 of the present embodiment is configured to have directivity. At this time, in the present embodiment, it is assumed that the vibrating region 22 is warped. Therefore, in each vibration region 22 , the difference in deformation due to the direction in which the sound pressure is applied tends to be large. Therefore, it is also possible to improve the sensitivity related to directivity. According to the present embodiment described above, the piezoelectric element 1 is arranged in a state where each vibration region 22 is warped. Furthermore, when connected to the circuit board 120 , each vibration region 22 is connected in parallel to the circuit board 120 . Therefore, while providing directivity, it is possible to further improve the sensitivity regarding directivity. (Modification of the Fourteenth Embodiment) A modification of the fourteenth embodiment will be described. In the above fourteenth embodiment, as shown in FIG. 31 , the vibrating regions 22 may be connected in series to each other while being connected in parallel to the circuit board 120 . (Fifteenth Embodiment) The fifteenth embodiment will be described. In this embodiment, compared with the first embodiment, a reflective film is formed on the vibrating region 22 . Regarding the others, since they are the same as those of the first embodiment, descriptions are omitted here. In this embodiment, as shown in FIG. 32 , in each vibration region 22 , a reflective film 140 having a higher reflectance than the piezoelectric film 50 , electrode film 60 , and pads 71c and 72c is formed on the outermost layer. In this embodiment, the reflective film 140 is formed on the upper electrode film 63 . In addition, the reflectance is high, in other words, it can also be said that the absorptivity is low. Furthermore, in this embodiment, the reflective film 140 is made of a material having a smaller Young's modulus than the piezoelectric film 50, such as a single-layer film or a multi-layer film of aluminum. Furthermore, the reflective film 140 is formed in the second region R2. In addition, in the present embodiment, the printed circuit board 140 corresponds to a lifting portion. The above is the configuration of the piezoelectric element 1 in this embodiment. Next, a method of manufacturing the piezoelectric vibrator 1 described above will be described. When manufacturing the piezoelectric element 1 , the insulating film 12 , the piezoelectric film 50 , the electrode film 60 , the reflective film 140 , etc. are sequentially formed on the support substrate 11 and appropriately patterned. And after forming the recessed part 10a, the slit 41 for isolation|separation is formed. After that, in this embodiment, a good/failure judgment is performed. Specifically, as shown in FIG. 33 , a detection device 150 including a laser light source 151 for irradiating a laser beam L and a detector 152 for detecting the intensity of the received laser beam L is prepared. The detector 152 has a control unit (not shown) that performs judgment based on a threshold value. The control unit is composed of a microcomputer, etc., and the microcomputer is equipped with a non-transitory physical storage medium such as a CPU, ROM, RAM, flash memory, or HDD. Constituted memory, etc. CPU is the abbreviation of Central Processing Unit, ROM is the abbreviation of Read Only Memory, RAM is the abbreviation of Random Access Memory, HDD is the abbreviation of Hard Disk Drive. Memory media such as ROM are non-transitory entity memory media. In the case where warpage does not occur in the vibration region 22 in the memory unit, the intensity at the time of receiving the laser beam L is stored as a threshold value. Furthermore, the control unit compares the intensity of the laser beam L received by the detector 152 with a threshold value to perform a good/failure judgment. Specifically, a surface along the normal direction to the reflective film 140 disposed in the vibration region 22 is defined as a reference plane T, and the reflective film 140 is irradiated with laser beam L from a direction inclined relative to the reference plane T. Furthermore, the reflected laser beam L is detected by the detector 152 . Furthermore, the control unit compares the intensity of the laser beam L received by the detector 152 with a threshold value to perform a good/failure judgment. For example, the detector 152 is when the detected intensity of the laser beam L is lower than 50% of the critical value. Good/failure judgment is performed in which the state of the vibration region 22 is judged to be abnormal. In this case, for example, as shown in FIG. 34 , when the warpage of the vibration region 22 is large and the laser beam L is not detected by the detector 152, it is determined that the state of the vibration region 22 is abnormal. In addition, it is preferable to select the laser beam L which has the maximum reflectance. For example, when the reflective film 140 is made of aluminum, it is preferable to use a wavelength in the visible light region of 1 μm. Furthermore, when the reflective film 140 is formed of another metal film, it may be preferable to use a wavelength in the infrared region. According to the present embodiment described above, since the reflective film 140 is disposed on the vibrating region 22, it is possible to judge whether the vibrating region 22 is good or not. Therefore, it is possible to manufacture the piezoelectric element 1 that can suppress a decrease in detection accuracy. Furthermore, in this embodiment, since the quality judgment is performed by irradiating the reflective film 140 with the laser beam L, non-contact quality judgment can be performed. Furthermore, the reflective film 140 is made of a material having a smaller Young's modulus than the piezoelectric film 50 . Therefore, it is possible to prevent the reflection film 140 from obstructing the deformation of the piezoelectric film 50, and it is possible to suppress a decrease in detection accuracy. Furthermore, the reflective film 140 is arranged in the second region R2. Therefore, it is possible to prevent the reflective film 140 from affecting the first region R1 in the vibration region 22 where the stress tends to increase. In addition, this embodiment can also be applied to the 14th embodiment. In this case, the threshold used for the determination may be set to a strength at which the amount of warping of the vibration region 22 becomes an expected value. (Sixteenth Embodiment) The sixteenth embodiment will be described. In this embodiment, as in the ninth embodiment, self-diagnosis is performed when the piezoelectric device is configured. Regarding the others, since they are the same as those of the ninth embodiment, explanations are omitted here. In the piezoelectric element of this embodiment, as shown in FIG. 35 , the piezoelectric element 1 is mounted on the other surface 11b of the support substrate 11 on the one surface 131a of the printed circuit board 131 via the bonding member 2 . Moreover, in this embodiment, the through-hole 131b is formed in the printed circuit board 131 similarly to the piezoelectric device described with reference to FIG. 17 of the tenth embodiment described above. Therefore, in the present embodiment, the sound pressure is detected when the sound pressure is applied to the sensing part 30 through the through hole 131b. Furthermore, in the present embodiment, the space between the portion where the through hole 131b is formed and the sensing part 30 is used as the pressure receiving surface space S1 in the casing 130 . In addition, the space that is located on the opposite side to the pressure receiving surface space S1 including the pinch sensing unit 30 is a back space S2 that is continuous with this space without interposing the separation slit 41 . In addition, in the present embodiment, although the piezoelectric device configured as shown in FIG. 35 is taken as an example for description, it is also applicable to the piezoelectric device configured as in the ninth embodiment or the tenth embodiment. The following constitution. The piezoelectric element 1 of this embodiment has first to fifth pads 701 to 705 electrically connected to the vibrating regions 22 as shown in FIGS. 36 and 37 . In addition, the first to fifth pad portions 701 to 705 correspond to the pad portions 71c and 72c in the first embodiment described above. 31 described in the modified example of the fourteenth embodiment, each vibration region 22 is connected in parallel to the circuit board 120 via the first to fifth pads 701 to 705, and are connected in series to each other. The circuit board 120 performs specific signal processing, and in this embodiment, a control unit 120a is arranged. In addition, the control unit 120 a may be arranged separately from the circuit board 120 . The control unit 120a is the same as the control unit of the above-mentioned fifteenth embodiment, and is composed of a microcomputer, etc., and this computer is equipped with a non-transitory physical memory such as a CPU, ROM, RAM, flash memory or HDD. memory, etc. Furthermore, the control unit 120a of this embodiment performs self-diagnosis of the piezoelectric device. Specifically, the control unit 120a of this embodiment performs abnormality determination of the piezoelectric element 1 . Specifically, the control unit 120a applies a specific voltage between the first pad portion 701 and the fifth pad portion 705 to vibrate each vibration region 22 with an abnormality determination signal. More specifically, the control unit 120a causes each vibration area 22 to perform general vibration at a frequency at which a sound pressure can be applied to the vibration area 22 in an actual sound pressure detection. In this embodiment, as shown in FIG. 38 , the vibration region 22 is formed so that the resonance frequency becomes 13 kHz, and several kHz is assumed as the frequency of the sound pressure that can be applied to the piezoelectric element 1 . Therefore, the control unit 120a applies a specific voltage between the first pad portion 701 and the fifth pad portion 705 so that each vibration region 22 generally vibrates at several kHz. In addition, in this embodiment, the resonance frequency is set to 13 kHz, and the frequency of the sound pressure that can be applied to the piezoelectric element 1 is assumed to be several kHz. Therefore, it can be said that the control part 120a applies a specific voltage between the first pad part 701 and the fifth pad part 705 by generally vibrating at a frequency lower than the resonance frequency. Accordingly, when each vibration region 22 is normal, a divided voltage corresponding to a specific voltage is applied from the second to fourth pad portions 702 to 704 . In contrast, if an abnormality such as a short circuit occurs between the vibrating regions 22 , the voltage output from the second to fourth pad portions 702 to 704 changes. Furthermore, if an abnormality such as disconnection occurs between the vibrating regions 22 , no voltage is output from the second to fourth pad portions 702 to 704 . Therefore, the control part 120a compares the voltage of the 2nd - 4th pad part 702-704 with a predetermined threshold value, and performs abnormality determination. Furthermore, the control unit 120a of the present embodiment performs self-diagnosis for estimating the pressure of the rear space S2. Furthermore, the control unit 120a corrects the pressure detection signal output from the piezoelectric element 1 based on the estimated pressure. That is, in the piezoelectric device as described above, the vibration mode of the vibration region 22 changes according to the change in the pressure of the back space S2. Specifically, the pressure of the rear space S2 changes according to the surrounding temperature, humidity, and the altitude used (that is, the location). Moreover, the higher the pressure of the back space S2, the harder the vibration area 22 is to vibrate, and the lower the pressure of the back space S2, the easier it is to vibrate. That is, in the piezoelectric device as described above, there is a possibility that the detection sensitivity may change depending on the usage environment. Therefore, in this embodiment, the pressure of the back space S is estimated, and the pressure detection signal output from the piezoelectric element 1 is corrected based on the estimated pressure. Specifically, since the control unit 120 a estimates the pressure of the back space S2 , a pressure estimation signal is applied to the piezoelectric element 1 to cause each vibration area 22 to vibrate in estimation. In this case, the control unit 120a vibrates each vibration region 22 to the maximum at the resonance frequency so that the vibration of each vibration region 22 becomes larger. Furthermore, the control unit 120a estimates the difference between the voltages of the second to fourth pads 702 to 704 when the pressure signal is applied and the voltages of the second to fourth pads 702 to 704 when the abnormality determination signal is applied, Move on to the next action. That is, the control unit 120a performs self-diagnosis in which the pressure in the rear space S2 is estimated from the Q value while calculating the Q value as the resonance magnification. In addition, when calculating the Q value, the specific calculation method can be appropriately changed. For example, even if the voltage of the second to fourth pads 702 to 704 when the signal is applied is estimated from the difference between the voltage of any of the second to fourth pads 702 to 704 when the abnormality determination signal is applied , to calculate the Q value. Furthermore, even if the average value of the difference between the voltages of the second to fourth pads 702 to 704 when the pressure is applied and the voltages of the second to fourth pads 702 to 704 when the abnormality determination signal is applied is estimated , to calculate the Q value. Furthermore, the control unit 120a corrects the pressure detection signal output from the piezoelectric element 1 based on the estimated pressure of the back space S2 when detecting the sound pressure. Specifically, the control unit 120a multiplies the piezoelectric detection signal by a correction coefficient corresponding to the pressure of the rear space S2 based on the fact that the pressure of the rear space S2 is atmospheric pressure. For example, when the pressure of the rear space S2 is greater than the atmospheric pressure, the control unit 120a performs correction by multiplying the pressure detection signal by a value greater than 1 as a correction coefficient because the vibration region 22 becomes difficult to vibrate. On the other hand, the control unit 120a performs correction by multiplying the pressure detection signal by a value less than 1 as a correction coefficient because the vibration region 22 tends to vibrate when the pressure of the rear space S2 is lower than the atmospheric pressure. Accordingly, the pressure detection signal has a value corresponding to the pressure of the rear space S2 (that is, the ease of vibration of the vibration region 22 ). In addition, the correction coefficient is derived in advance, for example, through experiments, and is stored in the control unit 120a in association with the pressure of the back space S2. According to the present embodiment described above, since self-diagnosis is performed, detection accuracy can be improved. Specifically, since the abnormality determination of the piezoelectric element 1 is performed, when there is an abnormality, the detection accuracy can be improved by stopping the detection of the sound pressure. Furthermore, since the pressure of the back space S2 is estimated, the detection accuracy can be improved by correcting the estimated pressure. (Modification of Sixteenth Embodiment) A modification of the sixteenth embodiment will be described. In the above-mentioned sixteenth embodiment, the control unit 120a may perform only one of abnormality determination and pressure estimation of the back space S2. Furthermore, in the above-mentioned sixteenth embodiment, the control unit 120a may vibrate each vibration area 22 at a resonance frequency if the pressure of the back space S2 is different from the general vibration. However, by maximizing the vibration of each vibration region 22 at the resonance frequency, the difference from the general vibration can be increased, and the estimation accuracy of the pressure in the back space S2 can be improved. (Seventeenth Embodiment) The seventeenth embodiment will be described. In this embodiment, compared with the first embodiment, the film thicknesses of the lower electrode film 61, the intermediate electrode film 62, and the upper electrode film 63 are prescribed. Regarding the others, since they are the same as those of the ninth embodiment, explanations are omitted here. The piezoelectric element 1 in this embodiment has the same structure as that of the above-mentioned first embodiment, as shown in FIG. 39 . However, in this embodiment, the stress increasing slit 42 is not formed in the piezoelectric element 1 . Furthermore, in this embodiment, the film thickness of the lower electrode film 61 and the film thickness of the upper electrode film 63 are thinner than the film thickness of the intermediate electrode film 62 . For example, in this embodiment, the film thickness of the lower electrode film 61 and the upper electrode film 63 is set to 25 nm, and the film thickness of the intermediate electrode film 62 is set to 100 nm. In addition, the film thickness between the lower electrode film 61 and the intermediate electrode film 62 in the lower piezoelectric film 51, and the film thickness between the intermediate electrode film 62 and the upper electrode film 63 in the upper piezoelectric film 52 are set to As in the above-mentioned first embodiment, it is set to 50 μm, for example. In addition, the lower electrode film 61 and the upper electrode film 63 are set to have the same rigidity. In this embodiment, the lower electrode film 61 and the upper electrode film 63 are made of the same material, and since the film thicknesses are made equal, the rigidity becomes equal. In addition, in the present embodiment, each of the lower electrode film 61 , the intermediate electrode film 62 , and the upper electrode film 63 arranged in the first region R1 and the second region R2 has the above-mentioned configuration. However, the portion where the lower electrode film 61 , the intermediate electrode film 62 , and the upper electrode film 63 are formed at least in the first region R1 may be configured as described above. Furthermore, in this embodiment, the configuration of the lower electrode film 61, the intermediate electrode film 62, and the upper electrode film 63 corresponds to a raised portion. As described above, in this embodiment, the film thickness of the lower electrode film 61 and the film thickness of the upper electrode film 63 are thinner than the film thickness of the intermediate electrode film 62, and the rigidity of the lower electrode film 61 and the upper electrode film 63 are equal. Therefore, by improving the sensitivity, the detection accuracy can be improved. That is, each vibrating region 22 has one end portion 22 a as a fixed end and the other end portion 22 b as a free end as described above. Therefore, as shown in FIG. 40, for example, in each vibration region 22, when a load (that is, sound pressure) is applied from the side of the upper electrode film 63 to the side of the lower electrode film 61, compressive stress is applied to the lower piezoelectric layer. On the film 51 side, tensile stress is applied to the upper piezoelectric film 52 side. In addition, the central portion in the thickness direction of each vibration region 22 becomes a neutral surface Cs to which no compressive stress or tensile stress is applied. In this case, as shown in FIGS. 41 and 42 , the compressive stress applied to the lower piezoelectric film 51 becomes larger as the distance from the neutral surface Cs increases. Likewise, the tensile stress applied to the upper voltage film 52 becomes larger the farther it is from the neutral surface Cs. Therefore, the lower piezoelectric film 51 and the upper piezoelectric film 52 can be configured to include a portion having a large stress by being formed including a position away from the neutral surface Cs. That is, the lower piezoelectric film 51 and the upper piezoelectric film 52 can be configured to include portions where electric charges are likely to be generated by being formed to include positions away from the neutral surface Cs. However, simply increasing the film thickness of the lower piezoelectric film 51, including the position away from the neutral plane Cs, widens the distance between the lower electrode film 61 and the intermediate electrode film 62, so that the lower electrode film 61 and the intermediate electrode film 62 become larger. The capacitance between the intermediate electrode films 62 decreases. Similarly, by simply increasing the film thickness of the upper piezoelectric film 52, including the position away from the neutral surface Cs, since the distance between the intermediate electrode film 62 and the upper electrode film 63 is widened, the intermediate electrode film 62 and the upper electrode film 63 are widened. The capacitance between the upper electrode films 63 decreases. Therefore, as in the present embodiment, by thickening the intermediate electrode film 62 and thinning the lower electrode film 61, the lower piezoelectric film 51 can include the lower layer piezoelectric film 51 without changing the film thickness of the lower layer piezoelectric film 51, including the vertical surface Cs. remote location. Similarly, by increasing the thickness of the intermediate electrode film 62 and thinning the upper electrode film 63, the upper piezoelectric film 52 can include the position away from the neutral surface Cs without changing the film thickness of the upper piezoelectric film 52. Therefore, the charge generated in the lower piezoelectric film 51 and the upper piezoelectric film 52 can be increased, and the detection accuracy can be improved by increasing the sensitivity. Furthermore, the lower electrode film 61 and the upper electrode film 63 are made of molybdenum, copper, platinum, platinum, titanium, etc., and their Young's modulus is larger than that of aluminum scandium nitride and the like constituting the lower piezoelectric film 51 and the upper piezoelectric film 52 . Therefore, the thicker the lower electrode film 61 and the upper electrode film 63 are, the easier it is to prevent deformation of the lower piezoelectric film 51 and the upper piezoelectric film 52 . Therefore, as in this embodiment, by making the film thickness of the lower electrode film 61 and the upper electrode film 63 thinner than the film thickness of the intermediate electrode film 62, the film thickness of the lower electrode film 61 and the upper electrode film 63 is smaller than that of the intermediate electrode film. When the film thickness of the film 62 is the same, the deformation of the lower piezoelectric film 51 and the upper piezoelectric film 52 can be prevented from being hindered. Therefore, the decrease in sensitivity can be suppressed, and the detection accuracy can be improved. In addition, the lower electrode film 61 and the upper electrode film 63 are set to have the same rigidity. Therefore, when sound pressure is applied, the deformation modes of the lower piezoelectric film 51 and the upper piezoelectric film 52 can be suppressed, and the overall deformation can be suppressed. (Modification of the Seventeenth Embodiment) A modification of the above-mentioned seventeenth embodiment will be described. In the above seventeenth embodiment, if the lower electrode film 61 and the upper electrode film 63 are thinner than the intermediate electrode film 62 and have equal rigidity, they may be configured as follows. That is, even if the lower electrode film 61 and the upper electrode film 63 are made of different materials, the rigidity may be equalized by adjusting the film thickness. (Eighteenth Embodiment) The eighteenth embodiment will be described. In this embodiment, the number of charge regions 620 is defined according to the parasitic capacitance Cp, compared to the eleventh embodiment. Regarding the others, since they are the same as those of the eleventh embodiment, explanations are omitted here. The piezoelectric element 1 of this embodiment is the same as the above-mentioned eleventh embodiment. The first intermediate electrode film 62a is divided into a plurality of charge regions 620, and the charge regions 620 are connected in series. Furthermore, the charge regions 620 are set to have the same area, and are connected in series with each other. Here, assuming that the sensitivity of the piezoelectric element 1 (that is, the output voltage) is ΔV, the capacitance of the entire sensing unit 30 is Co, and the parasitic capacitance is Cp, the result of converting the sound pressure into a voltage is When the acoustic-electric conversion coefficient is Γ, and the number of charge regions 620 is n, the following formula 3 is established. (Formula 3) ΔV=Γ×{Co/(Co+Cp)} In addition, the parasitic capacitance Cp is the capacitance of the part connecting the piezoelectric element 1 (that is, the sensing part 30) and the circuit substrate 120, or generated in the circuit The sum of capacitances and the like inside the substrate 120 . Furthermore, the capacitance Co of the sensing portion 30 is proportional to 1/n 2 because the charge regions 620 are connected in series. Therefore, as shown in FIGS. 43A to 43C, when the length from one end 22a to the other end 22b of the vibration region 22 is defined as the length d, the sensitivity depends on the length d, the number of charge regions 620, and the parasitic Capacitance Cp changes. Furthermore, in the current situation, it is better to increase the sensitivity, and the range from the maximum sensitivity to about 90% is considered to be practical. Therefore, in this embodiment, the number of charge regions 620 is set so that it becomes 90% or more of the maximum sensitivity. For example, as shown in FIG. 43B , the length d from one end 22 a to the other end 22 b of the vibration region 22 is 490 μm, and when the parasitic capacitance Cp is 2.0×10 -12 F, by forming the entire charge The number of regions 620 is 8 to 16, so that the sensitivity can be reduced. That is, by setting the number of charge regions 620 in each vibration region 22 to 2 to 4, a reduction in sensitivity can be achieved. In the present embodiment described above, it is specified that the number of charge regions 620 becomes 90% or more of the maximum sensitivity. Therefore, it is possible to improve the detection accuracy by improving the detection sensitivity. (Nineteenth Embodiment) The nineteenth embodiment will be described. This embodiment adjusts the acoustic compliance Cf of the pressure-receiving surface space S1, the acoustic compliance Cb of the back space S2, and the acoustic resistance Rg of the separation gap 41 when the piezoelectric device is configured as in the ninth embodiment. . Regarding the others, since they are the same as those of the ninth embodiment, explanations are omitted here. In the piezoelectric element of this embodiment, as shown in FIG. 44 , the other surface 11b of the support substrate 11 in the piezoelectric element 1 is mounted on one surface 131a of the printed circuit board 131 via the bonding member 2 . Moreover, in this embodiment, the through-hole 131b is formed in the printed circuit board 131 similarly to the piezoelectric device described with reference to FIG. 17 of the tenth embodiment described above. Therefore, in the present embodiment, the sound pressure is detected when the sound pressure is applied to the sensing part 30 through the through hole 131b. Furthermore, in this embodiment, in the housing 130, the space between the portion where the through hole 131b is formed and the sensing part 30 is defined as the pressure receiving surface space S1. The space that is located on the opposite side to the pressure receiving surface space S1 including the pinch sensing unit 30 is a back space S2 that is continuous with this space without the separation slit 41 interposed therebetween. In addition, in the present embodiment, although the recessed structure is not formed on the supporting substrate 11 of the piezoelectric element 1 , it is also possible to form the recessed structure on the supporting substrate 11 . In addition, in the piezoelectric element 1 of the present embodiment, the stress increasing slit 42 as in the above-mentioned first embodiment is not formed, but the stress increasing slit 42 and the like may be formed. Hereinafter, a piezoelectric device configured as shown in FIG. 44 will be described as an example, but the following configurations can also be applied to the piezoelectric device of the piezoelectric element 1 of each of the above-mentioned embodiments. First, the sensitivity of the piezoelectric device depends on the low-frequency attenuation frequency, the resonance frequency of the piezoelectric element 1 , and the Helmholtz frequency. Specifically, when the low-frequency attenuation frequency is fr, the low-frequency attenuation frequency fr is expressed by the following formula 4. Assuming that the resonance frequency of the piezoelectric element 1 is fmb, the resonance frequency fmb is represented by Equation 5 below. Assuming that the Helmholtz frequency is fh, the Helmholtz frequency fh is represented by Equation 6 below. In addition, Lm in Equation 5 is a constant proportional to the mass of the whole in each vibration region 22 of the piezoelectric element 1 . Lf in Equation 6 is the inertia of the through hole 132a. In addition, the inertia Lf of the through hole 132a is represented by the following formula 7. In addition, the acoustic compliance Cf of the pressure receiving surface space S1 is represented by the following formula 8. Acoustic compliance Cb of the rear space S2 is represented by the following formula 9. The acoustic resistance Rg of the separation slit 41 is represented by Equation 10 below. In addition, in Formulas 7-10, ρ0 is the air density, a is the radius of the through hole 132a, and L1 is the thickness of the printed circuit board 131 (that is, the length of the through hole 132a). Furthermore, Vf is the volume of the pressure-receiving surface space S1, Vb is the volume of the back space S2, and c is the speed of sound. μ is the frictional resistance of air, h is the thickness of the vibration region 22 , g is the width of the separation slit 41 , and L2 is the length of the separation slit 41 in each vibration region 22 . The width g of the separation slit 41 refers to the distance between the portions where the side surfaces of the vibrating regions 22 face each other, and is, for example, the width of the portion shown in FIG. 36 . The length L2 of the separation slit 41 is, for example, the length of the portion shown in FIG. 36 . Furthermore, the piezoelectric device of the present embodiment is configured so that the frequency increases in the order of the low-frequency attenuation frequency fr, the resonance frequency fmb of the piezoelectric element 1, and the Helmholtz frequency fh, as shown in FIG. 45 . Specifically, each frequency becomes a value according to the acoustic compliance Cf of the pressure receiving surface space S1, the acoustic compliance Cb of the back space S2, and the acoustic resistance Rg of the separation slit 41 as shown in the above expressions 4 to 6. Therefore, the value of each frequency is adjusted by adjusting the acoustic compliance Cf of the pressure-receiving surface space S1, the acoustic compliance Cb of the back space S2, and the acoustic resistance Rg of the separation gap 41. More specifically, the acoustic compliance Cb and the acoustic resistance Rg become smaller as the low-frequency attenuation frequency fr increases. The acoustic compliance Cm and the acoustic compliance Cb become smaller as the resonance frequency fmb of the piezoelectric element 1 increases. In this embodiment, the resonance frequency fmb of the piezoelectric element 1 is adjusted by adjusting the acoustic compliance Cb. The Helmholtz frequency fh becomes smaller as the inertial Lf and acoustic compliance Cf increase. In this embodiment, the Helmholtz frequency fh is adjusted by adjusting the acoustic compliance Cf. Accordingly, compared to the case where the Helmholtz frequency fh is set to be smaller than the resonance frequency fmb of the piezoelectric element 1, since the piezoelectric device is generally used for the sound pressure at a frequency between the low-frequency attenuation frequency fr and the resonance frequency fmb , it is possible to increase the frequency at which sensitivity can be maintained. Furthermore, in this embodiment, the acoustic compliance Cf, acoustic compliance Cb, and acoustic resistance Rg are adjusted so that the low-frequency attenuation frequency is set to 20 Hz and the Helmholtz frequency is set to 20 kHz. That is, in the present embodiment, the low-frequency attenuation frequency fr and the Helmholtz frequency fh are set to values deviated from the hearing range. Therefore, in the piezoelectric device of this embodiment, it is possible to increase the frequency at which the sensitivity in the hearing range can be increased. In addition, the resonance frequency fmb of the piezoelectric element 1 is set to 13 kHz, for example. Here, in order to make the low-frequency attenuation frequency 20 Hz or less, it may be as follows. That is, the acoustic resistance Rg that affects the low-frequency attenuation frequency fr is expressed as the above-mentioned formula 10. Therefore, in order to set the low-frequency attenuation frequency below 20 Hz, it is sufficient to make the above-mentioned formula 4 below 20 Hz, and it is sufficient to satisfy the acoustic resistance Rg such that Rg≧1/(40π×Cb). Therefore, it is sufficient if the width g of the separation slit 41 is formed to satisfy the following formula 11. Furthermore, the acoustic resistance Rg required to set the low-frequency attenuation frequency fr below 20 Hz is as shown in FIG. 46 in relation to the acoustic compliance Cb in the back space S2. In this case, the actual relationship between the thickness h of the vibration region 22 , the length L2 of the separation slit 41 , and the width g of the separation slit 41 is as shown in FIG. 47 . Therefore, as shown in FIG. 47 , if the width g of the separation slit 41 is 3 μm or less, the low-frequency attenuation frequency can be set to 20 Hz or less. Furthermore, in the above-mentioned piezoelectric device, when the sound pressure is introduced into the pressure-receiving surface space S1, the larger the volume of the back space S2, the higher the sensitivity tends to be. SN, which is the ratio of signal to noise than easy to get bigger. In this case, as shown in FIG. 48, when the signal strength ratio (dB) is Cb/Cf, which is the ratio of the acoustic compliance Cb to the acoustic compliance Cf, becomes 14 or less, it is generally considered to be large in noise compared to the reference. -3dB. In addition, the reference here is based on the S/N ratio of the case where the signal is the largest. In addition, -3dB or less with respect to a standard means the range in which the change is hard to perceive by human hearing. Therefore, in this embodiment, Cb/Cf is set to 14 or less. Accordingly, noise reduction can be achieved. In addition, in the above-mentioned piezoelectric device, detection is performed by vibrating the vibrating region 22 . In addition, in the above-mentioned piezoelectric device, even in the state where the sound pressure is not introduced into the pressure-receiving surface space S1, air particles are transferred from the pressure-receiving surface space S1 side and the back space S2 by Brownian motion. The side-to-vibration area 22 collides. In this case, if the collision of air particles from the pressure receiving surface space S1 side and the collision of air particles from the back space S2 side are different, the vibration region 22 does not need to vibrate and becomes a main cause of noise. Therefore, in order to reduce noise related to unnecessary vibration, it is preferable to make the volume of the space S1 on the pressure receiving surface equal to the volume of the space S2 on the back surface. Accordingly, noise related to unnecessary vibration can be reduced. As described above, in this embodiment, the sound compliance Cf, the sound compliance are adjusted so that the low-frequency attenuation frequency fr, the resonance frequency fmb of the piezoelectric element 1, and the Helmholtz frequency fh become larger in order. Sex Cb, acoustic resistance Rg. Therefore, compared with the case where the Helmholtz frequency fh is set to be lower than the resonance frequency fmb of the piezoelectric element 1, the frequency at which sensitivity can be maintained can be increased. Furthermore, in this embodiment, the low-frequency attenuation frequency fr is set to 20 Hz or less, and the Helmholtz frequency fh is set to 20 kHz or more. Therefore, sensitivity in the hearing range can be maintained. In this case, by setting the width g of the separation slit 41 to 3 μm or less, the low-frequency attenuation frequency fr can be set to 20 Hz or less. Also, in this embodiment, Cb/Cf is set to 14 or less. Therefore, noise reduction can be achieved. Furthermore, in this embodiment, by making the volume of the pressure-receiving surface space S1 equal to the volume of the back space S2, noise related to unnecessary vibration can be reduced. (Other Embodiments) This disclosure is described based on an embodiment, and it should be understood that this disclosure is not limited to this embodiment or structure. This disclosure also includes various modified examples or modifications within an equivalent range. In addition, even various combinations or types, as well as those containing only one element or more, or other combination types below also belong to the category or scope of thought of the present disclosure. For example, in each of the above-mentioned embodiments, the vibrator 20 may have a configuration including at least one piezoelectric film 50 and one electrode film 60 . Furthermore, in each of the above-mentioned embodiments, the floating region 21b in the vibrating part 20 is not divided into four vibrating regions 22, even if it is divided into three or less vibrating regions 22, even if it is divided into five The above vibration area 22 is also possible. Furthermore, in each of the above-mentioned embodiments, the sensing unit 30 may be constituted by one vibration region 22 . That is, for example, in the first embodiment described above, four sensing parts 30 may be formed based on the four vibration regions 22 constituted by one floating region 21b. In this case, in the above-mentioned seventh embodiment, it is also possible to have only one floating region 21b, and to configure a plurality of vibration regions 22 in this floating region 21b, and to have different resonance frequencies of each vibration region 22. Can. Furthermore, in the above-mentioned first embodiment, the increasing slit 42 is not formed, but the separating slit 41 is formed to reach the corner of the floating region 21b, and the corner C1 is directed toward the floating region 21b through the separating slit 41 in the first region R1. The inner side may be formed by being depressed. In addition, in the above-mentioned third embodiment, the one end portion 22a of the vibrating region 22 may have a shape that expands toward the side opposite to the other end portion 22b with respect to the imaginary line K1. Arc shape is also acceptable. Similarly, in the above-mentioned fourth embodiment, one end portion 22a of the vibration region 22 may have a shape that expands toward the side opposite to the side of the other end portion 22b with respect to the imaginary line K2. Arc shape is also acceptable. Furthermore, in the above-mentioned fifth embodiment, even if the hard film 82 is formed equally between the first region R1 side and the other end side 22b side in the second region R2, even if it is formed on the first region R1 side It may be denser than the other end 22b side. Furthermore, in the above-mentioned fifth embodiment, the hole 81 in which the hard film 82 is embedded may not be formed to penetrate the upper electrode film 63, the upper piezoelectric film 52, the intermediate electrode film 62, and the lower piezoelectric film 51. . For example, the hole portion 81 may be formed only through the upper electrode film 63 and the upper piezoelectric film 52 . That is, the depth of the hard film 82 formed in the second region R2 can be appropriately changed. In addition, in the above-mentioned fifth embodiment, even if the hard film 82 is not made of the same material as the first and second electrode parts 71 and 72, if it is a material with a higher Young's modulus than the piezoelectric film 50 , the constituent materials are not particularly limited. Furthermore, in the above-mentioned sixth embodiment, the stress increasing slit 42 may not be formed. As such a piezoelectric element 1 , it is possible to suppress a decrease in detection accuracy. In addition, in the sixth embodiment, the temperature detection element 91 and the heating element 92 may be arranged in the portion where the lower electrode film 61 is formed, or may be arranged in the portion where the upper electrode film 63 is formed. In addition, in the above-mentioned sixth embodiment, the temperature detecting element 91 and the heating element 92 may be formed in the first region R1. In addition, as described in the seventh embodiment and the like, the stress increasing slit 42 is not formed in each of the embodiments after the seventh embodiment. However, the stress increasing slit 42 may be appropriately formed in each embodiment. Furthermore, in the above-mentioned sixteenth embodiment, the detection accuracy can be improved by the operation of the control unit 120a. Therefore, in the above-mentioned sixteenth embodiment, it is not necessary to form the raised portion on the piezoelectric element 1 . Furthermore, in the seventh embodiment described above, if the resonance frequencies of the vibration regions 22 of the respective sensing parts 30 are different, the configuration of the vibration regions 22 can be appropriately changed. For example, the vibration regions 22 of the respective sensing parts 30 may be set to have different resonance frequencies due to differences in film thickness or material. In addition, when the film thickness or material of the vibrating region 22 is different for each of the sensing parts 30, for example, even when forming the piezoelectric film 50 of the vibrating region 22 by forming a film, the mask is appropriately arranged. , and the film thickness or material may be different. Furthermore, for example, after forming the piezoelectric film 50, the film thickness may be adjusted by etching or the like, or another piezoelectric film 50 may be formed again in the etched portion, so that the film thickness or material may be different. However, in the case where another piezoelectric film 50 is formed again in the etched part, for example, by making the side face of the etched part tapered, it is difficult to form another piezoelectric film 50 between the newly formed film. Bubbles are ideal. In this way, when the film thickness or material is different, it is possible to easily select a suitable one according to the application. Furthermore, the length between the one end portion 22a and the other end portion 22b of each vibration region 22 may be different, and the film thickness or material may be changed. Moreover, the above-mentioned implementation forms can also be combined appropriately. For example, even if the above-mentioned first embodiment is appropriately combined with each of the above-mentioned embodiments, the portion floating from the support 10 in the first region R1 may form the corner C1. Even if the above-mentioned second embodiment is appropriately combined with the above-mentioned respective embodiments, the corner portion C2 may be formed at one end of the first region R1. Even if the above-mentioned third embodiment is appropriately combined with each of the above-mentioned embodiments, the opening end of the recessed portion 10a may be rounded. Even if the above-mentioned fourth embodiment is appropriately combined with the above-mentioned embodiments, the opening end of the concave portion 10a is formed in a circular shape, and at the same time, a separation slit 41 is formed in the floating region 21b. Internal terminals are also available. Even if the above-mentioned fifth embodiment is appropriately combined with the above-mentioned respective embodiments, the hard film 82 may be arranged in the second region R2. Even if the above-mentioned sixth embodiment is appropriately combined with the above-mentioned respective embodiments, the temperature detecting element 91 and the heating element 92 may be arranged. Even if the above-mentioned seventh embodiment is appropriately combined with the above-mentioned respective embodiments, a configuration including a plurality of sensing units 30 may be used. Even if the above-mentioned eighth embodiment is appropriately combined with each of the above-mentioned embodiments, the protective film 100 may be provided on the side surface of the concave portion 10a. Even if the above-mentioned ninth embodiment is appropriately combined with each of the above-mentioned embodiments, the concave member may be formed on the side surface 11c of the support substrate 11 . Even if the above-mentioned tenth embodiment is combined with the above-mentioned respective embodiments, the piezoelectric element 1 may be flip-chip-mounted on the printed circuit board 131 . Even if the above-mentioned eleventh embodiment is appropriately combined with the above-mentioned embodiments, the shape of the intermediate electrode film 62 is changed. Even if the above-mentioned twelfth and thirteenth embodiments are appropriately combined with each of the above-mentioned embodiments, the divisions of the first region R1 and the second region R2 may be changed. Even if the above-mentioned fourteenth embodiment is combined with each of the above-mentioned embodiments, each vibration region 22 may be warped, and each vibration region 22 may be connected in parallel on the circuit board 120 . Even if the above-mentioned fifteenth embodiment is appropriately combined with each of the above-mentioned embodiments, a configuration including the reflective film 140 may be used. Even if the above-mentioned sixteenth embodiment is appropriately combined with the above-mentioned embodiments, self-diagnosis may be performed when the piezoelectric device is constructed. Even if the above seventeenth embodiment is combined with each embodiment, the film thickness of the lower electrode film 61 and the upper electrode film 63 is thinner than that of the intermediate electrode film 62, and the rigidity of the lower electrode film 61 and the upper electrode film 63 can be equal. . Even if the above eighteenth embodiment is appropriately combined with each embodiment, the number of charge regions 620 may be adjusted to be 90% or more of the maximum sensitivity. Even if the above-mentioned nineteenth embodiment is appropriately combined with each embodiment, the low-frequency attenuation frequency fr, the resonance frequency fmb of the piezoelectric element 1, and the Helmholtz frequency fh are adjusted to increase in order. Moreover, it is also possible to further combine the above-mentioned implementation forms with each other. In addition, in each of the above-described embodiments or combinations of embodiments, a configuration in which a part of the constituent elements is removed may be adopted as necessary. For example, as described above, in the sixth embodiment and the like, the stress increasing slit 42 may not be formed. The present disclosure is described based on the embodiment, and the present disclosure should not be understood as being limited to the embodiment or structure. This disclosure also includes various modified examples or modifications within an equivalent range. In addition, even various combinations or types, as well as those containing only one element or more, or other combination types below also belong to the category or scope of thought of the present disclosure.
