TWI795208B - A driving circuit and light-emitting device using the same - Google Patents

A driving circuit and light-emitting device using the same Download PDF

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TWI795208B
TWI795208B TW111105296A TW111105296A TWI795208B TW I795208 B TWI795208 B TW I795208B TW 111105296 A TW111105296 A TW 111105296A TW 111105296 A TW111105296 A TW 111105296A TW I795208 B TWI795208 B TW I795208B
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light
emitting device
source
control signal
current
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TW111105296A
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TW202224494A (en
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王聖博
吳長協
沈依如
郭家泰
張朝凱
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晶元光電股份有限公司
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Abstract

This application discloses a driving circuit and light-emitting device using the same. The driving circuit includes an external control unit, a digital control unit, a trigger unit and a current source. The digital control unit generates an internal control signal. The trigger unit generates a trigger signal to control the current source according to the internal control signal.

Description

一種驅動電路及使用該驅動電路之發光裝置A driving circuit and a light emitting device using the driving circuit

本發明是有關於一種發光裝置驅動電路,且特別是有關於利用數位控制單元調整發光裝置的光強度的電路。The present invention relates to a driving circuit for a light emitting device, and in particular to a circuit for adjusting the light intensity of the light emitting device by using a digital control unit.

隨著技術的發展,越來越多的日常生活中的裝置使用發光二極體(light-emitting diode;LED)作為光源。而為了能夠更廣泛的應用在日常生活中,部分光源更搭配了可以調整亮度的調光器,讓使用者可以配合環境需要改變光源的強度。一般常見的調光器可分為數位式的調光方式與類比式的調光方式。與數位式的調光方式相比,雖然類比式的調光方式不需要數位控制器也能調光,但受限於類比式的調光方式所使用的調光器(例如TRIAC調光器)需要維持電流來保持調光器的正常運作,導致在低亮度應用情境下容易發生通過調光器的電流低於調光器的維持電流而造成調光器不正常的關閉使光源出現閃爍的情況。因此,本發明在此提出一種數位式的調光方式,不僅避免低亮度時的閃爍情形,更可以提升調光方式的穩定。With the development of technology, more and more devices in daily life use light-emitting diodes (light-emitting diodes; LEDs) as light sources. In order to be more widely used in daily life, some light sources are equipped with dimmers that can adjust the brightness, so that users can change the intensity of the light source according to the needs of the environment. Common dimmers can be divided into digital dimming and analog dimming. Compared with the digital dimming method, although the analog dimming method can also dim without a digital controller, it is limited by the dimmer used in the analog dimming method (such as TRIAC dimmer) A maintenance current is required to maintain the normal operation of the dimmer, which leads to the fact that the current passing through the dimmer is lower than the maintenance current of the dimmer in low-brightness applications, causing the dimmer to turn off abnormally and causing the light source to flicker . Therefore, the present invention proposes a digital dimming method, which not only avoids flickering at low brightness, but also improves the stability of the dimming method.

本發明揭露一種發光裝置,包括一數位控制單元、一觸發單元、一電流源、以及一光源。數位控制單元提供一第一電流訊號,其中第一電流訊號為一脈衝寬度調變(PWM)訊號;觸發單元包含一第一電晶體,電性連接數位控制單元,並接收第一電流訊號;電流源,電性連接觸發單元,以及光源電性連接電流源。The invention discloses a light emitting device, which includes a digital control unit, a trigger unit, a current source, and a light source. The digital control unit provides a first current signal, wherein the first current signal is a pulse width modulation (PWM) signal; the trigger unit includes a first transistor, electrically connected to the digital control unit, and receives the first current signal; the current The source is electrically connected to the trigger unit, and the light source is electrically connected to the current source.

本發明揭露一種可連接一電源的發光裝置包括一數位控制單元、觸發單元、一電流源、以及一光源。數位控制單元提供一第一電流訊號,且第一電流訊號為一脈衝寬度調變(PWM)訊號,觸發單元包含一電晶體電性連接數位控制單元,並接收該第一電流訊號; 電流源電性連接觸發單元,以及光源電性連接電流源。The invention discloses a light-emitting device that can be connected to a power supply, including a digital control unit, a trigger unit, a current source, and a light source. The digital control unit provides a first current signal, and the first current signal is a pulse width modulation (PWM) signal, and the trigger unit includes a transistor electrically connected to the digital control unit, and receives the first current signal; The trigger unit is electrically connected, and the light source is electrically connected to the current source.

第1A圖為根據本發明一實施例之發光裝置1000的電路圖。發光裝置1000包含有光源18及驅動電路300,驅動電路300具有一外部控制單元10、一數位控制單元12、一觸發單元14與一電流源16。電流源16為一定電流源並包含一電晶體Q1,電晶體Q1可以是高電子遷移率場效電晶體(high electron mobility transistor;HEMT),更具體來說是一空乏型高電子遷移率場效電晶體(Depletion-mode HEMT)。電晶體Q1具有閘極G1、汲極D1和源極S1。汲極D1與光源18電性連接,閘極G1與觸發單元14電性連接。FIG. 1A is a circuit diagram of a light emitting device 1000 according to an embodiment of the present invention. The light emitting device 1000 includes a light source 18 and a driving circuit 300 . The driving circuit 300 has an external control unit 10 , a digital control unit 12 , a trigger unit 14 and a current source 16 . The current source 16 is a certain current source and includes a transistor Q1. The transistor Q1 may be a high electron mobility field effect transistor (HEMT), more specifically, a depletion type high electron mobility field effect transistor. Transistor (Depletion-mode HEMT). The transistor Q1 has a gate G1 , a drain D1 and a source S1 . The drain D1 is electrically connected to the light source 18 , and the gate G1 is electrically connected to the trigger unit 14 .

光源18包含一個或多個發光二極體,發光二極體可以包含有III-Ⅴ族半導體材料所構成的半導體層以發出非同調性光,III-Ⅴ族半導體材料例如是Al xIn yGa 1-x-y N或Al xIn yGa 1-x-y P,其中0≤x≤1;0≤y≤1;(x + y)≤1。並根據材料的不同,發光二極體可以發射峰值波長在610nm和650nm之間的紅色光、峰值波長在495nm和570nm之間的綠色光、峰值波長在450nm和495nm之間的藍色光、峰值波長在400nm和440nm之間的紫色光或峰值波長在200nm和400nm之間的紫外線光。在一實施例中,發光二極體具有一發光層,以及一形成於發光層之上的波長轉換材料,波長轉換材料包含了量子點材料、螢光粉材料或其二者之組合。其中,螢光粉材料可以包含黃綠色螢光粉、紅色螢光粉或藍色螢光粉。黃綠色螢光粉包含YAG、TAG,矽酸鹽,釩酸鹽,鹼土金屬硒化物,及金屬氮化物。紅色螢光粉包括氟化物(例如K 2TiF 6:Mn 4+或 K 2SiF 6:Mn 4+)、矽酸鹽、釩酸鹽、鹼土金屬硫化物、金屬氮氧化物、及鎢酸鹽和鉬酸鹽的混合物。藍色螢光粉包括BaMgAl 10O 17:Eu 2+。量子點材料可以是硫化鋅、硒化鋅、碲化鋅、氧化鋅、硫化鎘、硒化鎘、碲化鎘、氮化鎵、磷化鎵、硒化鎵、銻化鎵、砷化鎵、氮化鋁、磷化鋁、砷化鋁、磷化銦、砷化銦、碲、硫化鉛、銻化銦、碲化鉛、硒化鉛、碲化锑、ZnCdSeS、CuInS、CsPbCl 3、CsPbBr 3、CsPbI 3。在一實施例中,包含波長轉換材料的發光二極體可以發出一白光。例如,在顯示器的背光模組中,白光的色溫介於10000K~20000K之間,且在CIE1931色度圖中具有一色點座標(x、y),其中,0.27≦x≦0.285;0.23≦y≦0.26。在另一實施例中,例如,在通用照明的場合中,發光二極體發出的白光具有一色溫介於2200~6500K(例如2200K、2400K、2700K、3000K、5700K、6500K)且在CIE1931色度圖中具有一色點座標(x、 y)位於7階麥克亞當橢圓(MacAdam ellipse)內。 The light source 18 includes one or more light-emitting diodes. The light-emitting diodes may include semiconductor layers made of III-V semiconductor materials to emit non-coherent light. The III-V semiconductor materials are, for example, Al x In y Ga 1-xy ) N or AlxInyGa ( 1-xy ) P, where 0≤x≤1; 0≤y≤1 ; (x+y)≤1. And depending on the material, the light-emitting diode can emit red light with a peak wavelength between 610nm and 650nm, green light with a peak wavelength between 495nm and 570nm, blue light with a peak wavelength between 450nm and 495nm, and a peak wavelength of Violet light between 400nm and 440nm or ultraviolet light with a peak wavelength between 200nm and 400nm. In one embodiment, the light-emitting diode has a light-emitting layer, and a wavelength conversion material formed on the light-emitting layer. The wavelength conversion material includes quantum dot material, phosphor material or a combination thereof. Wherein, the phosphor material may include yellow-green phosphor, red phosphor or blue phosphor. Yellow-green phosphors include YAG, TAG, silicates, vanadates, alkaline earth metal selenides, and metal nitrides. Red phosphors include fluorides (such as K 2 TiF 6 : Mn 4+ or K 2 SiF 6 : Mn 4+ ), silicates, vanadates, alkaline earth metal sulfides, metal oxynitrides, and tungstates and molybdate mixtures. The blue phosphor includes BaMgAl 10 O 17 :Eu 2+ . Quantum dot materials can be zinc sulfide, zinc selenide, zinc telluride, zinc oxide, cadmium sulfide, cadmium selenide, cadmium telluride, gallium nitride, gallium phosphide, gallium selenide, gallium antimonide, gallium arsenide, Aluminum nitride, aluminum phosphide, aluminum arsenide, indium phosphide, indium arsenide, tellurium, lead sulfide, indium antimonide, lead telluride, lead selenide, antimony telluride, ZnCdSeS, CuInS, CsPbCl 3 , CsPbBr 3 , CsPbI 3 . In one embodiment, the LED including the wavelength conversion material can emit a white light. For example, in the backlight module of the display, the color temperature of white light is between 10000K~20000K, and has a color point coordinate (x, y) in the CIE1931 chromaticity diagram, where 0.27≦x≦0.285; 0.23≦y≦ 0.26. In another embodiment, for example, in the case of general lighting, the white light emitted by the light emitting diode has a color temperature between 2200~6500K (such as 2200K, 2400K, 2700K, 3000K, 5700K, 6500K) and is in the CIE1931 chromaticity In the figure, the coordinates (x, y) of a point with one color are located in the 7th order MacAdam ellipse (MacAdam ellipse).

如第1A圖所示,若發光裝置1000中相異元件的操作電壓不同,發光裝置1000可以分別連接適合個別元件需求的電源110、111。在一實施例中,數位控制單元12的操作電壓為5V,電源110可以提供3V~15V的電壓,例如3.3V、5V、7V、12V的電壓;光源18的操作電壓為110V,電源111可以提供70V~230V的電壓,例如80V、96V、115V的電壓。將需要不同的操作電壓的元件分別連接到各自的電源,除了電源供應更有效率外,更可以避免元件之間的交互干擾,影響到元件被操作時的穩定性。在一實施例中,發光裝置1000更包含一交流直流電壓轉換電路(圖未示)連接市電,並分別將市電轉換為電源110及/或電源111,市電例如是110V、220V或240V的交流電。As shown in FIG. 1A , if the operating voltages of different elements in the light emitting device 1000 are different, the light emitting device 1000 can be respectively connected to power sources 110 and 111 suitable for the requirements of individual elements. In one embodiment, the operating voltage of the digital control unit 12 is 5V, and the power supply 110 can provide a voltage of 3V~15V, such as 3.3V, 5V, 7V, and 12V; the operating voltage of the light source 18 is 110V, and the power supply 111 can provide 70V~230V voltage, such as 80V, 96V, 115V voltage. Connecting components that require different operating voltages to their respective power supplies not only makes the power supply more efficient, but also avoids mutual interference between components, which affects the stability of the components when they are operated. In one embodiment, the light emitting device 1000 further includes an AC/DC voltage conversion circuit (not shown in the figure) connected to the mains, and converts the mains into the power 110 and/or the power 111 respectively. The mains are, for example, 110V, 220V or 240V AC.

在發光裝置1000中,數位控制單元12根據一來自外部控制單元10的第一控制訊號Si1產生一第二控制訊號Si2。第二控制訊號Si2被輸入至觸發單元14。觸發單元14便根據第二控制訊號Si2產生第三控制訊號Si3,並利用第三控制訊號Si3控制電流源16的導通或關閉(On or Off)。其中,第一控制訊號Si1為一外部控制訊號,第二控制訊號Si2為一內部控制訊號,以及第三控制訊號Si3為一觸發訊號。由於發光二極體的亮度與流經的電流大小有關,藉由控制電流源16的導通或關閉狀態,可以決定一段時間內通過光源18的電流大小,達到調整發光裝置1000的發光強度的效果。In the light emitting device 1000 , the digital control unit 12 generates a second control signal Si2 according to a first control signal Si1 from the external control unit 10 . The second control signal Si2 is input to the trigger unit 14 . The trigger unit 14 generates a third control signal Si3 according to the second control signal Si2, and uses the third control signal Si3 to control the current source 16 to be turned on or off (On or Off). Wherein, the first control signal Si1 is an external control signal, the second control signal Si2 is an internal control signal, and the third control signal Si3 is a trigger signal. Since the brightness of the light-emitting diode is related to the magnitude of the current flowing through it, by controlling the on or off state of the current source 16 , the magnitude of the current passing through the light source 18 within a period of time can be determined to achieve the effect of adjusting the luminous intensity of the light-emitting device 1000 .

外部控制單元10可以是有線裝置或無線裝置,用於接受使用者的指令以產生第一控制訊號Si1。在一實施例中,外部控制單元10為一透過實體線路與數位控制單元12相連以傳輸第一控制訊號Si1給數位控制單元12的有線裝置,例如可變電阻或感應器(sensor)。在一實施例中,外部控制單元10為一透過無線傳輸的方式將第一控制訊號Si1傳遞給數位控制單元12的無線裝置,例如一藍芽模組或物聯網裝置。在一實施例中,數位控制單元12為一微處理器單元(Microcontroller Unit ; MCU),用於根據第一控制訊號Si1產生一第二控制訊號Si2,且此第二控制訊號Si2為一脈衝寬度調變(Pulse Width Modulation ; PWM)訊號。更具體而言,數位控制單元12依據第一控制訊號Si1調整第二控制訊號Si2的訊號特性,訊號特性包含責任比(duty ratio)。隨著責任比越低,電流源16的導通時間也越長,使得光源18的發光時間也越長,而發光裝置1000提供的亮度也越高。相關細節請參考第1B圖與相關段落。The external control unit 10 can be a wired device or a wireless device, and is used to receive a user's command to generate the first control signal Si1. In one embodiment, the external control unit 10 is a wired device connected to the digital control unit 12 through physical wires to transmit the first control signal Si1 to the digital control unit 12 , such as a variable resistor or a sensor. In one embodiment, the external control unit 10 is a wireless device that transmits the first control signal Si1 to the digital control unit 12 through wireless transmission, such as a Bluetooth module or an Internet of Things device. In one embodiment, the digital control unit 12 is a microprocessor unit (Microcontroller Unit; MCU), for generating a second control signal Si2 according to the first control signal Si1, and the second control signal Si2 is a pulse width Modulation (Pulse Width Modulation; PWM) signal. More specifically, the digital control unit 12 adjusts the signal characteristics of the second control signal Si2 according to the first control signal Si1, and the signal characteristics include a duty ratio. As the duty ratio becomes lower, the conduction time of the current source 16 is longer, so that the light emitting time of the light source 18 is also longer, and the brightness provided by the light emitting device 1000 is also higher. Please refer to Figure 1B and related paragraphs for details.

整體而言,透過控制電流源16的導通或關閉決定光源18的發光時間以達到調光的效果。其中,透過高於人眼可察覺的開關頻率(例如大於50、60、120Hz的頻率)開啟或關閉電流源16,就能避免人眼感受到發光裝置1000的閃爍而造成不適。換句話說,發光裝置1000根據第一控制訊號Si1依序產生第二控制訊號Si2及第三控制訊號Si3來開啟或關閉電流源16,其中的第二控制訊號Si2及第三控制訊號Si3的頻率高於人眼可察覺的開關頻率。Generally speaking, the lighting time of the light source 18 is determined by controlling the current source 16 to be turned on or off, so as to achieve the dimming effect. Wherein, by turning on or off the current source 16 at a switching frequency higher than human eyes can detect (for example, a frequency greater than 50, 60, or 120 Hz), it is possible to prevent human eyes from feeling the flicker of the light emitting device 1000 and causing discomfort. In other words, the light emitting device 1000 sequentially generates the second control signal Si2 and the third control signal Si3 according to the first control signal Si1 to turn on or turn off the current source 16, wherein the frequency of the second control signal Si2 and the third control signal Si3 higher than the switching frequency perceivable by the human eye.

在發光裝置1000中,電流源16內的電晶體Q1為一空乏型高電子遷移率場效電晶體,因此觸發單元14提供一包含負電壓的第三控制訊號Si3以開啟或關閉電晶體Q1。具體而言,觸發單元14包含一負電壓產生器或一箝位電路(clamping circuit),用於根據第二控制訊號Si2產生一包含負電壓的第三控制訊號Si3。參考第1A圖,觸發單元14包含一電容Ca與數位控制單元電性連接,以及一二極體Di連接電容Ca與電晶體Q1。第三控制訊號Si3和第二控制訊號Si2的電壓範圍不同,例如第二控制訊號Si2的電壓範圍為0V~5V,而第三控制訊號Si3的電壓範圍為-5V~0V,使得包含負電壓的第三控制訊號Si3得以開啟或關閉電晶體Q1。In the light emitting device 1000, the transistor Q1 in the current source 16 is a depletion high electron mobility field effect transistor, so the trigger unit 14 provides a third control signal Si3 including a negative voltage to turn on or off the transistor Q1. Specifically, the trigger unit 14 includes a negative voltage generator or a clamping circuit for generating a third control signal Si3 including a negative voltage according to the second control signal Si2. Referring to FIG. 1A, the trigger unit 14 includes a capacitor Ca electrically connected to the digital control unit, and a diode Di connected to the capacitor Ca and the transistor Q1. The voltage ranges of the third control signal Si3 and the second control signal Si2 are different, for example, the voltage range of the second control signal Si2 is 0V~5V, while the voltage range of the third control signal Si3 is -5V~0V, so that the voltage range including negative voltage The third control signal Si3 can turn on or turn off the transistor Q1.

第1B圖為第1A圖中一實施例之第二控制訊號Si2的波形圖。第1B圖中包含了波形(a)~波形(e)等五個波形,分別代表責任比為0%、25%、50%、75%與100%的第二控制訊號Si2的波形。隨著責任比的不同,第二控制訊號Si2的波形也由代表責任比0%的波形(a)中全部處在低壓(VL)的狀態隨之改變位於高壓(VH)的比例,例如成為代表責任比25%的波形(b)、成為代表責任比50%的波形(c)、成為代表責任比75%的波形(d)或成為代表責任比100%的波形(e)。在發光裝置1000中,觸發單元14根據第二控制訊號Si2產生一第三控制訊號Si3,而第三控制訊號Si3的頻率和第二控制訊號Si2相同或大致相同,但第三控制訊號Si3的責任比和第二控制訊號Si2不同。以頻率而言,第三控制訊號Si3與第二控制訊號Si2的頻率相差小於其中之一頻率的5%。以責任比而言,兩個訊號Si2、Si3的責任比相加大約等於100%。舉例來說,在發光裝置1000中,當第二控制訊號Si2為波形(b)且責任比為25%時,第三控制訊號Si3的責任比大致為75%;當第二控制訊號Si2由波形(b)被調整為波形(d)時,第三控制訊號Si3的責任比同樣也從75%被調整為25%。在一實施例中,兩個訊號Si2、Si3的責任比相加介於90%~110%。第二控制訊號Si2的責任比越高,則第三控制訊號Si3的責任比越低,讓一個週期內光源18發光的時間也越短,使得發光裝置1000的亮度越暗;反之,第二控制訊號Si2的責任比越低,則第三控制訊號Si3的責任比就越高,讓一個週期內光源18發光的時間越長,使得發光裝置1000的亮度越亮。總結來說,發光裝置1000可以從外部控制單元10接受使用者的指令產生對應的第一控制訊號Si1來控制第二控制訊號Si2的責任比,再透過第三控制訊號Si3控制電流源16,以改變發光裝置1000的發光亮度。FIG. 1B is a waveform diagram of the second control signal Si2 of an embodiment in FIG. 1A. FIG. 1B includes five waveforms including waveform (a) to waveform (e), respectively representing the waveforms of the second control signal Si2 with duty ratios of 0%, 25%, 50%, 75% and 100%. With the difference of the duty ratio, the waveform of the second control signal Si2 also changes from the waveform (a) representing the duty ratio 0% to the state of the low voltage (VL) and the ratio of the high voltage (VH), for example, to represent A waveform with a duty ratio of 25% (b), a waveform representing a duty ratio of 50% (c), a waveform representing a duty ratio of 75% (d), or a waveform representing a duty ratio of 100% (e). In the light emitting device 1000, the trigger unit 14 generates a third control signal Si3 according to the second control signal Si2, and the frequency of the third control signal Si3 is the same or substantially the same as the second control signal Si2, but the responsibility of the third control signal Si3 than the second control signal Si2. In terms of frequency, the frequency difference between the third control signal Si3 and the second control signal Si2 is less than 5% of one of the frequencies. In terms of the duty ratio, the sum of the duty ratios of the two signals Si2 and Si3 is approximately equal to 100%. For example, in the lighting device 1000, when the second control signal Si2 is of waveform (b) and the duty ratio is 25%, the duty ratio of the third control signal Si3 is approximately 75%; When (b) is adjusted to waveform (d), the duty ratio of the third control signal Si3 is also adjusted from 75% to 25%. In one embodiment, the sum of duty ratios of the two signals Si2 and Si3 is between 90% and 110%. The higher the duty ratio of the second control signal Si2 is, the lower the duty ratio of the third control signal Si3 is, so that the time for the light source 18 to emit light in one cycle is also shorter, making the brightness of the light emitting device 1000 darker; otherwise, the second control signal Si3 The lower the duty ratio of the signal Si2 is, the higher the duty ratio of the third control signal Si3 is, so that the time for the light source 18 to emit light in one cycle is longer, so that the brightness of the light emitting device 1000 is brighter. In summary, the light-emitting device 1000 can receive the user's instruction from the external control unit 10 to generate the corresponding first control signal Si1 to control the duty ratio of the second control signal Si2, and then control the current source 16 through the third control signal Si3 to achieve The light emission brightness of the light emitting device 1000 is changed.

在一實施例中,光源18與電源111之間更設置有一電阻(圖未示)以調整流過光源18的電流。在一實施例中,更設置有一電阻及/或電容於電源111與電流源16之間,使得電阻及/或電容與光源18串聯或並聯以調整流過光源18的電流,更能濾除雜訊讓光源18的發光情況更穩定。在一實施例中,電流源16內電晶體Q1的源極S與接地電位之間更設置有一電阻(圖未示)及/或電容(圖未示)以調整流經電晶體Q1的電流。In one embodiment, a resistor (not shown) is further provided between the light source 18 and the power source 111 to adjust the current flowing through the light source 18 . In one embodiment, a resistor and/or capacitor is further provided between the power supply 111 and the current source 16, so that the resistor and/or capacitor are connected in series or in parallel with the light source 18 to adjust the current flowing through the light source 18, and to filter out impurities. The information allows the luminescence of the light source 18 to be more stable. In one embodiment, a resistor (not shown) and/or a capacitor (not shown) is further provided between the source S of the transistor Q1 and the ground potential in the current source 16 to adjust the current flowing through the transistor Q1 .

第2圖為根據本發明一實施例之發光裝置1002。發光裝置1002包含有光源18及驅動電路302,驅動電路302具有一外部控制單元10、一數位控制單元12、一觸發單元14、電阻R與一電流源160。電流源160包含並聯的電晶體Q1與電晶體Q2。電晶體Q1、Q2可以是高電子遷移率場效電晶體,更具體來說是空乏型高電子遷移率場效電晶體。電晶體Q1具有閘極G1、汲極D1和源極S1,電晶體Q2具有閘極G2、汲極D2和源極S2。電晶體Q1與電晶體Q2並聯,使得汲極D1、D2與光源18電性連接,源極S1、S2相連,且閘極G1、G2一同連接到觸發單元14。發光裝置1002與發光裝置1000中具有相同或相似標號與名稱的元件的相關描述請參考前述段落,以及發光裝置1002內如何透過外部控制單元10接受使用者的指令以產生第一控制訊號Si1,再經由數位控制單元12與觸發單元14產生的第二控制訊號Si2與第三控制訊號Si3控制光源18的發光強度的操作流程也請參考前述段落。在發光裝置1002中,包含有電晶體Q1、Q2的電流源160可以提供光源18更多的電流以增加發光強度。於一實施例中,於電源110與觸發單元14之間設置電阻R以提供另一額外的電流(電流訊號)予觸發單元14。電流訊號可以提供更多的電流,使得觸發單元14內的電容Ca可以接收更多電荷,以更穩定的輸出電流給電晶體Q1、Q2。其中,電阻R的一端與電源110相接,另一端同時電性連接數位控制單元12與觸發單元14。透過電阻R的設置,觸發單元14除了接收第二控制訊號Si2外,也接收通過電阻R的電流訊號。如前所述,電流訊號可以提供電容Ca更多電荷,以更穩定的輸出電流給電晶體Q1、Q2。在一實施例中,電流訊號的電流值將大於第二控制訊號Si2的電流值,例如,第二控制訊號Si2為100mA, 電流訊號為1A。換句話說,若第二控制訊號Si2的電流量不能滿足電晶體Q1、Q2的需求,可以透過電流訊號補充需求,在此,電流訊號可以提供電容Ca更多的電荷以輸出更穩定的電流給電晶體Q1、Q2。因此,觸發單元14內的電容Ca可以接收來自數位控制單元12的電流訊號(也就是第二控制訊號Si2)以及來自於電源110的電流訊號,並由於接收複數個電流訊號得以儲存更多電荷,使得電容Ca在電晶體Q1、Q2導通的期間不會因為儲存在電容Ca內的電荷量不夠而成第三控制訊號Si3的異常。例如應該是責任比為75%的第三控制訊號Si3,因為儲存在電容Ca內的電荷量不夠而提前從高壓的狀態轉變為低壓,成為例如是責任比為60%的情況。而這樣責任比異常的情況,會造成電晶體Q1、Q2提前被關閉而呈現發光裝置1002亮度異常的狀況。值得注意的是,當觸發單元14與越多的電晶體相連時,就必須要增加電容Ca的容量以儲存更多的電荷並穩定的輸出電流給相連的電晶體。在這樣的情況下,也更容易發生因為儲存在電容Ca內的電荷量不夠而使得第三控制訊號Si3的異常情況,因而更需要設置如第2圖中的電阻R,以增加輸入至觸發單元14的電流量。其中,電阻R的數值可隨著所需要的電流量而改變,如果要增加輸入至觸發單元14的電流量就設置數值較低的電阻R。相對地,若要避免過多的電流通過電阻而產生多餘的熱,就改為設置數值較大的電阻R,同時在能夠避免第三控制訊號Si3發生異常的情況下並減少電流。在其他實施例中,電阻R可以被設置於第1A圖的發光裝置1000中,用於連接電源110與觸發單元14,讓觸發單元14內的電容Ca可以接收來自數位控制單元12的電流訊號(也就是第二控制訊號Si2)以及通過電阻R的電流訊號以儲存更多電荷,達到避免電晶體Q1提前被關閉的亮度異常現象。FIG. 2 is a light emitting device 1002 according to an embodiment of the present invention. The light emitting device 1002 includes a light source 18 and a driving circuit 302 . The driving circuit 302 has an external control unit 10 , a digital control unit 12 , a trigger unit 14 , a resistor R and a current source 160 . The current source 160 includes a transistor Q1 and a transistor Q2 connected in parallel. Transistors Q1 and Q2 may be high electron mobility field effect transistors, more specifically depletion type high electron mobility field effect transistors. The transistor Q1 has a gate G1 , a drain D1 and a source S1 , and the transistor Q2 has a gate G2 , a drain D2 and a source S2 . The transistor Q1 and the transistor Q2 are connected in parallel, so that the drains D1 and D2 are electrically connected to the light source 18 , the sources S1 and S2 are connected, and the gates G1 and G2 are both connected to the trigger unit 14 . Please refer to the preceding paragraphs for the relevant descriptions of components with the same or similar labels and names in the light emitting device 1002 and the light emitting device 1000, and how the light emitting device 1002 receives the user's instruction through the external control unit 10 to generate the first control signal Si1, and then For the operation process of controlling the luminous intensity of the light source 18 through the second control signal Si2 and the third control signal Si3 generated by the digital control unit 12 and the trigger unit 14 , please also refer to the preceding paragraphs. In the light emitting device 1002, the current source 160 including the transistors Q1 and Q2 can provide more current to the light source 18 to increase the luminous intensity. In one embodiment, a resistor R is provided between the power source 110 and the trigger unit 14 to provide another additional current (current signal) to the trigger unit 14 . The current signal can provide more current, so that the capacitor Ca in the trigger unit 14 can receive more charges and output more stable current to the transistors Q1 and Q2. One end of the resistor R is connected to the power source 110 , and the other end is electrically connected to the digital control unit 12 and the trigger unit 14 . Through the setting of the resistor R, the trigger unit 14 not only receives the second control signal Si2, but also receives the current signal passing through the resistor R. As mentioned above, the current signal can provide more charge to the capacitor Ca, so as to provide a more stable output current to the transistors Q1 and Q2. In one embodiment, the current value of the current signal is greater than the current value of the second control signal Si2, for example, the second control signal Si2 is 100mA, and the current signal is 1A. In other words, if the current of the second control signal Si2 cannot meet the requirements of the transistors Q1 and Q2, the current signal can be used to supplement the demand. Here, the current signal can provide more charges for the capacitor Ca to output a more stable current to the transistor. Crystals Q1, Q2. Therefore, the capacitor Ca in the trigger unit 14 can receive the current signal from the digital control unit 12 (that is, the second control signal Si2) and the current signal from the power supply 110, and can store more charges due to receiving multiple current signals, Therefore, the third control signal Si3 will not be abnormal due to insufficient charge stored in the capacitor Ca during the conduction period of the transistors Q1 and Q2. For example, the duty ratio of the third control signal Si3 should be 75%, because the electric charge stored in the capacitor Ca is not enough, the state of high voltage is changed to low voltage in advance, and the duty ratio is, for example, 60%. Such an abnormal duty ratio will cause the transistors Q1 and Q2 to be turned off in advance, resulting in abnormal brightness of the light emitting device 1002 . It should be noted that when the trigger unit 14 is connected with more transistors, the capacity of the capacitor Ca must be increased to store more charges and output current to the connected transistors stably. In such a case, it is more likely to cause an abnormal situation of the third control signal Si3 due to insufficient charge stored in the capacitor Ca, so it is more necessary to set the resistor R as shown in Figure 2 to increase the input to the trigger unit 14 current flow. Wherein, the value of the resistor R can be changed according to the required current. If the current input to the trigger unit 14 is to be increased, a resistor R with a lower value should be set. Relatively, if excessive current is to pass through the resistor to avoid excess heat, the resistor R with a larger value is set instead, and the current is reduced under the condition that the abnormality of the third control signal Si3 can be avoided. In other embodiments, the resistor R can be set in the light emitting device 1000 in FIG. 1A to connect the power supply 110 and the trigger unit 14, so that the capacitor Ca in the trigger unit 14 can receive the current signal from the digital control unit 12 ( That is, the second control signal Si2) and the current signal passing through the resistor R store more charges, so as to avoid the abnormal brightness phenomenon that the transistor Q1 is turned off in advance.

在一實施例中,光源18與電源111之間更設置有一電阻(圖未示)以調整流過光源18的電流。在一實施例中,更設置有一電阻及/或電容於電源111與電流源160之間,使得電阻及/或電容與光源18並聯以調整流過光源18的電流,更能濾除雜訊讓光源18的發光情況更穩定。在一實施例中,電流源160內電晶體Q1、Q2的源極S1、S2與接地電位之間更設置有一電阻(圖未示)及/或電容(圖未示)以調整流經電晶體Q1、Q2的電流。In one embodiment, a resistor (not shown) is further provided between the light source 18 and the power source 111 to adjust the current flowing through the light source 18 . In one embodiment, a resistor and/or capacitor is further provided between the power source 111 and the current source 160, so that the resistor and/or capacitor are connected in parallel with the light source 18 to adjust the current flowing through the light source 18, which can further filter out noise and make the The light emitting condition of the light source 18 is more stable. In one embodiment, a resistor (not shown) and/or a capacitor (not shown) is further provided between the sources S1 and S2 of the transistors Q1 and Q2 in the current source 160 and the ground potential to adjust the current flowing through the transistors. The current of Q1 and Q2.

第3圖為根據本發明一實施例之發光裝置2000。發光裝置2000包含有光源18及驅動電路320,驅動電路320具有一外部控制單元10、一數位控制單元12、一觸發單元15與一電流源160。發光裝置2000與發光裝置1000中具有相同或相似標號與名稱的元件的相關描述請參考前述段落。觸發單元15包含一電晶體Q3,電晶體Q3可以是金氧半導體場效電晶體(metal oxide semiconductor field effect transistor;MOSFET),更具體來說是一增強型高電子遷移率場效電晶體(Enhancement-mode MOSFET)。電晶體Q1具有閘極G1、汲極D1和源極S1,電晶體Q3具有閘極G3、汲極D3和源極S3。在發光裝置2000中,電流源160內的電晶體Q1與電晶體Q3串聯,使得電晶體Q1的閘極G1與接地電位相接、汲極D1與光源18電性連接,以及源極S1與電晶體Q3的汲極D3相連,而電晶體Q3的閘極G3與數位控制單元12相接、汲極D3與電晶體Q1的源極S1相接,以及源極S3與接地電位相接。在發光裝置2000中,數位控制單元12根據一來自外部控制單元10的第一控制訊號Si1產生一第二控制訊號Si2,且第二控制訊號Si2被輸入至觸發單元15。在一實施例中,數位控制單元12與觸發單元15更存在一電阻,透過電阻的設置以調整第二控制訊號Si2的電壓值及/或電流值。觸發單元15接收第二控制訊號Si2,並根據第二控制訊號Si2 調整電晶體Q3的導通或關閉,藉此調整光源18在一個週期內的發光時間長度。更具體而言,當電晶體Q3接收第二控制訊號Si2而被導通時,電流依序經過光源18、電流源160(內的電晶體Q1)與觸發單元15(內的電晶體Q3),使得發光裝置2000可以發出光線。相對地,當電晶體Q3接收第二控制訊號Si2而被關閉時,電流無法通過觸發單元15(內的電晶體Q3),使得發光裝置2000無法發出光線。因此,在發光裝置2000中可以直接根據數位控制單元12產生的第二控制訊號Si2,調整觸發單元15(內的電晶體Q3)導通的時間長度,來改變光源18在一個週期中發光時間的長度,達到改變亮度的效果。也就是說,第二控制訊號Si2的責任比越高,一個週期內光源18發光的時間也越長,使得發光裝置1000的亮度越高;反之,第二控制訊號Si2的責任比越低,一個週期內光源18發光的時間越短,使得發光裝置1000的亮度越低。值得注意的是,由於電晶體Q3可以直接由第二控制訊號Si2所控制,因此無須再由其他裝置(例如觸發單元14)轉換第二控制訊號Si2。FIG. 3 is a light emitting device 2000 according to an embodiment of the present invention. The light emitting device 2000 includes a light source 18 and a driving circuit 320 . The driving circuit 320 has an external control unit 10 , a digital control unit 12 , a trigger unit 15 and a current source 160 . Please refer to the preceding paragraphs for the relevant descriptions of the elements with the same or similar numbers and names in the light emitting device 2000 and the light emitting device 1000 . The trigger unit 15 includes a transistor Q3, and the transistor Q3 may be a metal oxide semiconductor field effect transistor (MOSFET), more specifically, an enhanced high electron mobility field effect transistor (Enhancement -mode MOSFETs). The transistor Q1 has a gate G1 , a drain D1 and a source S1 , and the transistor Q3 has a gate G3 , a drain D3 and a source S3 . In the light emitting device 2000, the transistor Q1 in the current source 160 is connected in series with the transistor Q3, so that the gate G1 of the transistor Q1 is connected to the ground potential, the drain D1 is electrically connected to the light source 18, and the source S1 is connected to the electric potential. The drain D3 of the transistor Q3 is connected, the gate G3 of the transistor Q3 is connected to the digital control unit 12 , the drain D3 is connected to the source S1 of the transistor Q1 , and the source S3 is connected to the ground potential. In the lighting device 2000 , the digital control unit 12 generates a second control signal Si2 according to a first control signal Si1 from the external control unit 10 , and the second control signal Si2 is input to the trigger unit 15 . In one embodiment, the digital control unit 12 and the trigger unit 15 further have a resistor, and the voltage value and/or current value of the second control signal Si2 can be adjusted through the setting of the resistor. The trigger unit 15 receives the second control signal Si2, and adjusts the turn-on or turn-off of the transistor Q3 according to the second control signal Si2, thereby adjusting the light-emitting time length of the light source 18 in one cycle. More specifically, when the transistor Q3 is turned on by receiving the second control signal Si2, the current passes through the light source 18, the current source 160 (transistor Q1 inside) and the trigger unit 15 (transistor Q3 inside) in sequence, so that The light emitting device 2000 can emit light. In contrast, when the transistor Q3 is turned off by receiving the second control signal Si2, the current cannot pass through the trigger unit 15 (the transistor Q3 inside), so that the light emitting device 2000 cannot emit light. Therefore, in the light emitting device 2000, the length of time during which the trigger unit 15 (transistor Q3 inside) is turned on can be adjusted directly according to the second control signal Si2 generated by the digital control unit 12, so as to change the length of light emitting time of the light source 18 in one cycle. , to achieve the effect of changing the brightness. That is to say, the higher the duty ratio of the second control signal Si2, the longer the time for the light source 18 to emit light in one cycle, so that the brightness of the light emitting device 1000 is higher; on the contrary, the lower the duty ratio of the second control signal Si2, a The shorter the light-emitting time of the light source 18 in the period, the lower the brightness of the light-emitting device 1000 . It is worth noting that since the transistor Q3 can be directly controlled by the second control signal Si2, there is no need to convert the second control signal Si2 by other devices (such as the trigger unit 14 ).

以上所述之實施例僅係為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍。The above-described embodiments are only to illustrate the technical ideas and characteristics of the present invention, and its purpose is to enable those skilled in this art to understand the content of the present invention and implement it accordingly, and should not limit the patent scope of the present invention. That is, all equivalent changes or modifications made according to the spirit disclosed in the present invention should still be covered by the patent scope of the present invention.

1000、1002、2000:發光裝置 300、302、320:驅動電路 110、111:電源 10:外部控制單元 12:數位控制單元 14、15:觸發單元 16、160:電流源 18:光源 Ca:電容 Di:二極體 R:電阻 Q1、Q2、Q3:電晶體 Si1:第一控制訊號 Si2:第二控制訊號 Si3:第三控制訊號 1000, 1002, 2000: light emitting device 300, 302, 320: drive circuit 110, 111: power supply 10: External control unit 12: Digital control unit 14, 15: trigger unit 16, 160: current source 18: light source Ca: Capacitance Di: diode R: resistance Q1, Q2, Q3: Transistor Si1: The first control signal Si2: Second control signal Si3: The third control signal

第1A圖為根據本發明一實施例之發光裝置的電路圖。FIG. 1A is a circuit diagram of a light emitting device according to an embodiment of the present invention.

第1B圖為第二控制訊號的波形圖。FIG. 1B is a waveform diagram of the second control signal.

第2圖為根據本發明一實施例之發光裝置的電路圖。Fig. 2 is a circuit diagram of a light emitting device according to an embodiment of the present invention.

第3圖為根據本發明一實施例之發光裝置的電路圖。Fig. 3 is a circuit diagram of a light emitting device according to an embodiment of the present invention.

none

1000:發光裝置 1000: light emitting device

300:驅動電路 300: drive circuit

110、111:電源 110, 111: power supply

10:外部控制單元 10: External control unit

12:數位控制單元 12: Digital control unit

14:觸發單元 14:Trigger unit

16:電流源 16: Current source

18:光源 18: light source

Ca:電容 Ca: Capacitance

Di:二極體 Di: diode

Q1:電晶體 Q1: Transistor

D1:汲極 D1: drain

G1:閘極 G1: Gate

S1:源極 S1: source

Si1:第一控制訊號 Si1: The first control signal

Si2:第二控制訊號 Si2: Second control signal

Si3:第三控制訊號 Si3: The third control signal

Claims (7)

一種發光裝置,包括:一數位控制單元,提供一第一電流訊號,其中該第一電流訊號為一脈衝寬度調變(PWM)訊號;一觸發單元,包含一增強型金氧半導體場效電晶體,其中該增強型金氧半導體場效電晶體包含一第一閘極、一第一汲極、以及一第一源極,該第一閘極電性連接該數位控制單元,並接收該第一電流訊號,該第一源極連接一接地電位;一電流源,包含一空乏型高載子遷移率電晶體,與該增強型高電子遷移率場效電晶體串聯,其中該空乏型高載子遷移率電晶體包含一第二閘極、一第二汲極、以及一第二源極,該第二閘極連接該接地電位,以及該第二源極連接該第一汲極;以及一光源,電性連接該第二汲極。 A light emitting device, comprising: a digital control unit providing a first current signal, wherein the first current signal is a pulse width modulation (PWM) signal; a trigger unit including an enhanced metal oxide semiconductor field effect transistor , wherein the enhanced metal oxide semiconductor field effect transistor includes a first gate, a first drain, and a first source, the first gate is electrically connected to the digital control unit, and receives the first A current signal, the first source is connected to a ground potential; a current source includes a depletion type high carrier mobility transistor connected in series with the enhanced high electron mobility field effect transistor, wherein the depletion type high carrier The mobility transistor includes a second gate, a second drain, and a second source, the second gate is connected to the ground potential, and the second source is connected to the first drain; and a light source , electrically connected to the second drain. 如申請專利範圍第1項之發光裝置,其中該第二源極與該接地電位之間更設置有一電阻及/或一電容。 For the light-emitting device of claim 1, a resistor and/or a capacitor are further provided between the second source and the ground potential. 如申請專利範圍第1項之發光裝置,其中該發光裝置可連接一電源,且更包含一電阻位於該電源與該光源之間。 For example, the light-emitting device of claim 1, wherein the light-emitting device can be connected to a power source, and further includes a resistor located between the power source and the light source. 如申請專利範圍第1項之發光裝置,其中該發光裝置可連接一電源,且更包含一電阻及/或一電容位於該電源與該電流源之間。 For example, the light-emitting device of claim 1, wherein the light-emitting device can be connected to a power source, and further includes a resistor and/or a capacitor between the power source and the current source. 如申請專利範圍第1項之發光裝置,更包含一電阻位於該數位控制單元與該觸發單元之間。 For example, the light-emitting device of item 1 of the scope of the patent application further includes a resistor located between the digital control unit and the trigger unit. 如申請專利範圍第1項之發光裝置,更包含一外部控制單元,其中該外部控制單元產生一外部控制訊號以調整該第一電流訊號的訊號特性。 For example, the light-emitting device in claim 1 of the patent application further includes an external control unit, wherein the external control unit generates an external control signal to adjust the signal characteristics of the first current signal. 如申請專利範圍第6項之發光裝置,其中該第一電流訊號的訊號特性包含一責任比(duty ratio)。 For example, the light emitting device according to claim 6 of the patent application, wherein the signal characteristic of the first current signal includes a duty ratio.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI436689B (en) * 2010-10-22 2014-05-01 Delta Electronics Inc Lighting apparatus and control method thereof
TWI589181B (en) * 2016-02-02 2017-06-21 隆達電子股份有限公司 Dimming module and solid state lighting device
TWI666970B (en) * 2015-02-27 2019-07-21 盧森堡商達爾國際股份有限公司 Analog and digital dimming control for led driver

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI436689B (en) * 2010-10-22 2014-05-01 Delta Electronics Inc Lighting apparatus and control method thereof
TWI666970B (en) * 2015-02-27 2019-07-21 盧森堡商達爾國際股份有限公司 Analog and digital dimming control for led driver
TWI589181B (en) * 2016-02-02 2017-06-21 隆達電子股份有限公司 Dimming module and solid state lighting device

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