TWI794664B - Method of controlling a position of a moveable stage, imprint lithography system, and method of manufacturing articles - Google Patents
Method of controlling a position of a moveable stage, imprint lithography system, and method of manufacturing articles Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
Abstract
Description
本發明涉及奈米壓印微影中的對準控制,更具體地涉及即時回饋和前饋控制。 The present invention relates to alignment control in nanoimprint lithography, and more particularly to immediate feedback and feedforward control.
在奈米壓印微影中,已經使用了用於場對場對準的技術來實現奈米級的覆蓋精確度。在一些範例中,可以透過相對於基板(例如,晶圓)移動模板來校正壓印模板與基板上的對應場之間的初始對準誤差。然而,快速和一致的奈米壓印微影對準是種挑戰。更具體地,稀液摩擦和初始狀態的變化是兩個主要困難。當前對準方案通常使用可以透過調諧旋鈕手動調諧的單一控制演算法。除了與手動調整控制演算法(如時間延遲)以實現對控制演算法的修改相關的傳統缺點外,當前方案的變化和非線性不足以 處理不同的RLT(模板和基板之間的可固化液體的殘留層厚度)、位置和過渡程序。這導致各種問題,包含慢對準收斂、對準過衝(alignment overshoot)、對準下衝(alignment undershoot)、停轉(stalling)、振盪和可重複性問題。這些問題始終影響大量生產的產量和效率,因此需要對其進行校正。 In nanoimprint lithography, techniques for field-to-field alignment have been used to achieve nanometer-scale overlay accuracy. In some examples, initial alignment errors between the imprint template and corresponding fields on the substrate can be corrected by moving the template relative to the substrate (eg, wafer). However, fast and consistent nanoimprint lithography alignment is a challenge. More specifically, dilute fluid friction and initial state changes are two major difficulties. Current alignment schemes typically use a single control algorithm that can be tuned manually via a tuning knob. In addition to the traditional disadvantages associated with manual tuning of the control algorithm (such as time delays) to implement modifications to the control algorithm, current schemes are not sufficiently variable and non-linear Handle different RLT (residual layer thickness of curable liquid between template and substrate), positions and transition procedures. This leads to various problems including slow alignment convergence, alignment overshoot, alignment undershoot, stalling, oscillations and repeatability issues. These issues consistently affect the yield and efficiency of mass production, so they need to be corrected.
根據本發明,提供一種控制其上支撐有基板的可移動平台的位置的方法。從感測器獲取表示所述基板相對於物體上的標記的位置的第一位置資訊。基於所獲取的第一位置來產生對準預測資訊,所產生的對準預測資訊包含至少一個參數值。基於所獲取的第一位置資訊和所產生的對準預測資訊來產生包含所述至少一個參數值的第一軌跡資訊。基於所產生的對準預測資訊、所述第一軌跡資訊以及第二位置資訊來產生第二軌跡資訊,其中所述第二位置資訊表示所述可移動平台的位置。基於所述第二軌跡資訊來產生輸出控制訊號,並基於所產生的輸出訊號來控制所述可移動平台以接近目標位置。 According to the present invention, there is provided a method of controlling the position of a movable platform having a substrate supported thereon. First position information representing the position of the substrate relative to the marking on the object is obtained from the sensor. Alignment prediction information is generated based on the obtained first position, and the generated alignment prediction information includes at least one parameter value. First trajectory information including the at least one parameter value is generated based on the acquired first position information and the generated alignment prediction information. Second trajectory information is generated based on the generated alignment prediction information, the first trajectory information, and second location information, wherein the second location information represents a location of the movable platform. An output control signal is generated based on the second trajectory information, and the movable platform is controlled to approach a target position based on the generated output signal.
在根據本發明的另一實施例中,基於表示所述基板相對於所述物體上的所述標記的所述位置的所述感測器來確定誤差值,所述物體係按照所述第二軌跡資訊來移動,並基於係在預定範圍內的所述誤差值來產生經更新的輸出控制訊號,並基於所述經更新的輸出控制訊號來控 制所述可移動平台以接近所述目標位置。 In another embodiment according to the invention, an error value is determined based on said sensor representing said position of said substrate relative to said marking on said object according to said second Track information to move, and based on the error value is within a predetermined range to generate an updated output control signal, and based on the updated output control signal to control controlling the movable platform to approach the target location.
在根據本發明其它實施例中,在所述可移動平台已經根據所述輸出控制訊號移動之後,基於透過影像擷取裝置獲取的經更新的第一位置資訊來更新所述對準預測資訊和包含在其中的所述至少一個參數值。 In other embodiments according to the present invention, after the movable platform has moved according to the output control signal, updating the alignment prediction information and including The at least one parameter value therein.
根據本發明,所述對準預測資訊為第一前饋訊號,並且所產生的第一軌跡資訊為透過獲取所獲取的第一位置資訊與所述前饋對準預測資訊之間的差異而產生的第一回饋訊號,以及所產生的第二軌跡資訊為第二回饋訊號。 According to the present invention, the alignment prediction information is a first feed-forward signal, and the generated first trajectory information is generated by obtaining the difference between the obtained first position information and the feed-forward alignment prediction information The first feedback signal and the generated second track information are the second feedback signal.
本發明提供了進一步的實施例,其提供了響應於基於表示所述基板相對於在所述對準預測資訊的終點位置處的所述物體上的所述標記的所述位置的所述感測器來確定誤差值在預定範圍之外,產生包含基於經更新的第一位置資訊確定的經更新的至少一個參數值的新對準預測資訊,以及將所述新對準預測資訊與所述第二軌跡資訊結合以產生經更新的輸出控制訊號,以基於所述經更新的輸出控制訊號來控制所述可移動平台。如此,所述輸出控制訊號係進一步基於第三前饋控制訊號和所述第二軌跡資訊的組合。 The present invention provides a further embodiment which provides a response to said sensing based on said position representing said substrate relative to said marker on said object at the end position of said alignment prediction information. determining that the error value is outside a predetermined range, generating new alignment prediction information including an updated at least one parameter value determined based on the updated first position information, and combining the new alignment prediction information with the first location information The two trajectory information are combined to generate an updated output control signal for controlling the movable platform based on the updated output control signal. As such, the output control signal is further based on a combination of the third feedforward control signal and the second trajectory information.
本文描述的一般態樣和實現的優點包含基於即時系統識別的對準誤差的前饋和回饋控制,從而在壓印微影中快速且準確地校正對準誤差。快速而準確的校正可將基板移動平穩過渡到對準狀態,從而提高對準產量和覆 蓋精確度。 Advantages of the general aspects and implementations described herein include feedforward and feedback control based on alignment errors identified by the system on the fly, thereby quickly and accurately correcting alignment errors in imprint lithography. Fast and accurate corrections provide a smooth transition from substrate movement to alignment, improving alignment throughput and coverage Cover accuracy.
本說明書中描述的標的之一或多種實現的細節在附圖和以下描述中闡述。根據說明書、圖式和申請專利範圍,標的之其它潛在特徵、態樣和優點將變得顯而易見。 The details of one or more implementations of the subject matter described in this specification are set forth in the accompanying drawings and the description below. Other potential features, aspects, and advantages of the subject matter will become apparent from the specification, drawings, and claims.
100:壓印微影系統 100: Imprint lithography system
102:基板 102: Substrate
104:基板卡盤 104: substrate chuck
106:平台 106: Platform
108:模板 108:Template
110:模具 110: Mold
112:圖案化表面 112: Patterned surface
124:凹部 124: concave part
126:凸部 126: convex part
128:模板卡盤 128: template chuck
130:壓印頭 130: Embossing head
132:流體分配系統 132: Fluid distribution system
134:可聚合材料 134: Polymerizable material
136:液滴 136: droplet
138:能量源 138: energy source
140:能量 140: energy
142:路徑 142: path
144:控制器 144: Controller
146:記憶體 146: memory
148:表面 148: surface
150:聚合物圖案化層 150: polymer patterned layer
152:殘留層 152: residual layer
154:凸部 154: convex part
156:凹部 156: concave part
158:感測器 158: sensor
302:模板對準標記 302: template alignment mark
304:基板對準標記 304: Substrate alignment mark
402:測量訊號 402: Measurement signal
410:前饋控制器 410: Feedforward controller
412:第一前饋訊號 412: The first feedforward signal
414:第二前饋控制訊號 414: The second feedforward control signal
416:第三前饋訊號 416: The third feedforward signal
420:第一接面 420: First meeting
422:第一輸入訊號 422: The first input signal
430:對準回饋控制器 430: Align feedback controller
432:對準軌跡資訊 432: Alignment trajectory information
440:第二接面 440:Second Junction
442:第二輸入訊號 442: Second input signal
450:平台回饋控制器 450: Platform Feedback Controller
452:第二軌跡資訊 452:Second trajectory information
460:第三接面 460: The third junction
462:平台移動控制訊號 462: Platform movement control signal
470:平台放大器 470: Platform Amplifier
472:輸出控制訊號 472: output control signal
474:平台位置資訊 474:Platform location information
476:平台位置感測器 476: Platform position sensor
502:第一前饋產生器 502: The first feed-forward generator
504:第二前饋產生器 504: the second feed-forward generator
506:第三前饋產生器 506: The third feed-forward generator
S602:步驟 S602: step
S604:步驟 S604: step
S606:步驟 S606: step
S608:步驟 S608: step
S610:步驟 S610: step
S612:步驟 S612: step
S614:步驟 S614: step
S615:步驟 S615: step
S616:步驟 S616: step
702:目標標記距離 702: target marker distance
[圖1]描繪了奈米壓印微影系統的側視圖。 [Fig. 1] A side view depicting a nanoimprint lithography system.
[圖2]描繪了圖1的基板的側視圖。 [ Fig. 2 ] A side view depicting the substrate of Fig. 1 .
[圖3]描繪了與基板上的液體壓印抗蝕劑接觸的奈米壓印微影模板的側視圖,分別顯示模板和基板上的範例對準標記對之間的初始對準誤差X0。 [ FIG. 3 ] Depicts a side view of a nanoimprint lithography template in contact with a liquid imprint resist on a substrate, showing an initial alignment error X0 between a pair of exemplary alignment marks on the template and the substrate, respectively.
[圖4]描繪了顯示用於在模板和基板上對準標記的前饋和回饋控制的方塊圖。 [ FIG. 4 ] Depicts a block diagram showing feedforward and feedback control for aligning marks on the template and substrate.
[圖5A-5C]顯示圖4中顯示的不同類型的前饋控制器。 [Figs. 5A-5C] show different types of feedforward controllers shown in Fig. 4.
[圖6]是詳述對準控制演算法的流程圖。 [ Fig. 6 ] is a flow chart detailing the alignment control algorithm.
[圖7]是用於產生各種移動軌跡的前饋訊號的圖形表示。 [Fig. 7] is a graphical representation of the feedforward signals used to generate various moving trajectories.
[圖8A和8B]是控制訊號收斂到目標位置所花費的時間的圖形表示。 [FIGS. 8A and 8B] are graphical representations of the time taken for the control signal to converge to the target position.
圖1顯示在基板102上形成浮雕圖案的壓印微
影系統100。基板102可以被耦接到基板卡盤104。在一些範例中,基板卡盤104包含真空卡盤、銷式卡盤、凹式卡盤、電磁卡盤或其它合適的卡盤。範例性卡盤在美國專利號6,873,087中描述,其透過參照併入本文。基板102和基板卡盤104可以進一步由平台106支撐。平台106提供繞x軸、y軸和z軸的移動以及繞z軸的旋轉(例如,θ)。就這一點而言,平台106可以指XYθ平台。平台106、基板102和基板卡盤104也可以位於基座(未顯示)上。
FIG. 1 shows an embossed microstructure forming a relief pattern on a
壓印微影系統100包含與基板102間隔開的壓印微影模板108。在一些範例中,模板108包含從模板108朝向基板102延伸的檯面110(模具110)。在一些範例中,模具110包含圖案化表面112。模板108和/或模具110可以由這種材料形成,這些材料包含但不限於熔融石英、石英、矽、有機聚合物、矽氧烷聚合物、硼矽酸鹽玻璃、碳氟化合物聚合物、金屬、硬化藍寶石或其它合適的材料。在圖示的範例中,圖案化表面112包含透過間隔開的凹部124和凸部126定義的複數個特徵。如上所述被形成的圖案僅是用於舉例的目的,並且任何類型的圖案也可以在圖案化表面112上呈現。因此,圖案化表面112可以定義任何圖案,所述圖案形成將透過壓印處理在基板102上形成的圖案的基礎。
The
模板108可以耦接到模板卡盤128。在一些範例中,模板卡盤128包含真空卡盤、銷式卡盤、凹式卡盤、電磁卡盤或其它合適的卡盤。範例性卡盤在美國專利
號6,873,087中描述。在一些實施例中,模板卡盤128可以是與基板卡盤104相同的類型。在其它實施例中,模板卡盤128和基板卡盤可以是不同類型的卡盤。此外,模板卡盤128可以被耦接至壓印頭130,使得模板卡盤128、壓印頭130或兩者被配置成促進模板108的移動。模板108的移動包含相對於模板在模板的平面內的移動(平面內移動)和模板的平面外的移動(平面外移動)。平面內移動包含模板108在模板的平面中(例如,在圖1中描繪的XY平面中)的平移以及模板在模板的平面中(例如,在XY平面中和繞Z軸)的旋轉。模板108相對於基板102的平移或旋轉也可透過基板的平移或旋轉來實現。模板108的平面內移動還包含增大或減少模板相對側上的壓縮力(例如,使用放大致動器)來增大或減少模板在模板的XY平面上的尺寸。模板108的平面外移動包含模板沿Z軸的平移(例如,透過增加或減少模板和基板之間的距離來增加或減少經由模板施加到基板的力)和模板繞模板的XY平面中的軸的旋轉。模板108繞模板的XY平面中的軸線的旋轉改變了模板108的XY平面與基板102的XY平面之間的角度,並且在本文中被稱為相對於基板「傾斜」模板,或相對於基板改變模板的「傾斜」或「傾斜角」。美國專利號8,387,482揭露了在壓印微影系統中經由壓印頭的模板的移動,並且透過參照將其併入本文。
壓印微影系統100還可包含流體分配系統132。流體分配系統132可以被用於在基板102上沉積可聚
合材料134。可聚合材料134可使用諸如滴分配、旋塗、浸塗、化學氣相沉積(CVD)、物理氣相沉積(PVD)、薄膜沉積、厚膜沉積的技術或其它合適的方法設置在基板102上。在一些範例中,在模具110和基板102之間限定所需的體積之前或之後,將可聚合材料134設置在基板102上。可聚合材料134可包含如美國專利號7,157,036和美國專利申請案公開號2005/0187339中揭露的單體,其兩者透過參照併入本文中。在一些範例中,可聚合材料134作為複數個液滴136設置在基板102上。
The
參照圖1和圖2,壓印微影系統100可以進一步包含能量源138,所述能量源138沿著路徑142耦接至直接能量140。在一些範例中,壓印頭130和平台106被配置成將模板108和基板102定位成與路徑142重疊。壓印微影系統100可以由與平台106、壓印頭130、流體分配系統132、能量源138或其任何組合進行通訊的控制器144來調整,並且可以在儲存在記憶體146中的電腦可讀取程式上操作。
Referring to FIGS. 1 and 2 ,
在一些範例中,壓印頭130、平台106或兩者改變模具110與基板102之間的距離,以在其之間限定由可聚合材料134填充的所需體積。例如,壓印頭130可以向模板108施加力,以使得模具110接觸可聚合材料134。在所需體積被可聚合材料134填充之後,能量源138產生能量140,如寬帶紫外線輻射,從而致使可聚合材料134聚合並且順應基板102的表面148和圖案化表面112的形狀,從而
在基板102上限定了聚合物圖案化層150。在一些範例中,圖案化層150包含殘留層152與顯示為突部154和凹部156的複數個特徵,其中突部154的厚度為t1,而殘留層152的厚度為t2。
In some examples,
以上描述的系統和程序可以被進一步實現在涉及美國專利號6,932,934、美國專利申請案公開號2004/0124566、美國專利申請案公開號2004/0188381和美國專利申請案公開號2004/0211754(其全部透過參照併入本文)的壓印微影程序和系統中。 The systems and procedures described above can be further implemented in reference to U.S. Patent No. 6,932,934, U.S. Patent Application Publication No. 2004/0124566, U.S. Patent Application Publication No. 2004/0188381, and U.S. Patent Application Publication No. 2004/0211754 (all of which through in the imprint lithography programs and systems incorporated herein by reference).
壓印微影基板和模板可以包含對應的對準標記對,其允許模板和基板的即時對準。在將圖案化的模板放置在基板上(例如,疊加在基板上)之後,確定模板對準標記相對於基板對準標記的對準。對準方案可以包含與對應的對準標記相關的對準誤差的「穿過檯面」(TTM)測量,隨後對這些誤差的補償,以實現在模板和基板上的所需壓印位置的精確對準,如美國專利號6,916,585;7,170,589;7,298,456;以及7,420,654所揭露的,其全部透過參照併入本文中。對準誤差可能是由於基板和模板的相對定位,基板或模板的變形或其組合致使的。 The imprint lithography substrate and template may contain corresponding pairs of alignment marks that allow instant alignment of the template and substrate. After the patterned template is placed on (eg, superimposed on) the substrate, the alignment of the template alignment marks relative to the substrate alignment marks is determined. Alignment schemes can include "through-table" (TTM) measurement of alignment errors associated with corresponding alignment marks, followed by compensation of these errors to achieve precise alignment of the desired imprint position on the template and substrate. standards, as disclosed in US Patent Nos. 6,916,585; 7,170,589; 7,298,456; and 7,420,654, all of which are incorporated herein by reference. Alignment errors may be due to the relative positioning of the substrate and template, deformation of the substrate or template, or a combination thereof.
圖3說明與基板102上的液體壓印抗蝕劑134接觸的壓印微影模板108的側視圖,其分別顯示模板108和基板102上的一對範例性對準標記302和304之間的第一或初始對準誤差X0。對準誤差X0可以由諸如感測器158的影像擷取裝置測量。在一些範例中,感測器158包含配置成
檢測來自對準標記302和304的衍射光的TTM對準儀器,其中所述衍射光可以穿過液體壓印抗蝕劑134。初始對準誤差X0可能超過可容許的對準誤差,例如,其可以小於10nm,重複性為1nm或更小。儘管將感測器158描述為影像擷取裝置,但這僅是範例性的,並且影像擷取裝置可以包含能夠即時檢測、擷取和透射衍射光的任何裝置。
3 illustrates a side view of
對準誤差X0可能主要是由於平台106(例如XYθ平台)的放置誤差、旋轉誤差和/或柔度和磁滯造成的,並且可能包含x和y軸上的誤差以及繞z軸(θ)的旋轉。例如,放置誤差通常是指模板與基板之間的XY定位誤差(也就是說,沿X軸、Y軸或這兩者的平移,其中X和Y軸位於模板或基板的壓印表面的平面中或與所述壓印表面平行,如圖1所示)。旋轉(θ)誤差一般是指繞Z軸的相對方位誤差(也就是說,繞Z軸的旋轉,其中如圖1所示Z軸正交於XY平面)。 Alignment error X0 may be primarily due to placement errors, rotation errors, and/or compliance and hysteresis of stage 106 (e.g., an XYθ stage), and may include errors in the x and y axes as well as errors around the z-axis (θ) rotate. For example, placement errors typically refer to XY positioning errors between the template and substrate (that is, translation along the X axis, the Y axis, or both, where the X and Y axes lie in the plane of the imprinting surface of the template or substrate. or parallel to the embossed surface, as shown in Figure 1). Rotation (θ) error generally refers to relative orientation error about the Z axis (that is, rotation about the Z axis, where the Z axis is orthogonal to the XY plane as shown in FIG. 1 ).
模板對準標記302和對應的基板對準標記304在XY平面上的偏移的放置誤差可以透過模板和基板的相對移動來補償(例如,透過在XY平面中受控的基板、模板或兩者的移動)。可以透過改變模板和基板在XY平面上的相對角度(例如,透過基板、模板或兩者的旋轉)來補償旋轉誤差。 Placement errors in the offset of the template alignment marks 302 and corresponding substrate alignment marks 304 in the XY plane can be compensated for by relative movement of the template and substrate (e.g., by controlling the substrate, template, or both in the XY plane). the movement). Rotation errors can be compensated for by changing the relative angle of the template and substrate in the XY plane (eg, through rotation of the substrate, template, or both).
本發明闡述了一種控制機構,其用於控制上文參考圖1至圖3描述的壓印系統的操作,以減少對準標記302和304收斂以進行正確對準所需的時間,以確保在檯面
110上定義的圖案成功地印在基板102上。換句話說,將在下面描述控制演算法,以在預定時間段內使通常由X0表示的減少的誤差值在預定誤差臨界值以下。較佳地,結果將致使模板上的標記與基板上的標記之間的相對距離小於預定距離值。然而,由於基板和用於在其上壓印圖案的聚合物兩者的各種物理特性,在可接受的時間段內使此誤差值達到可接受的程度存在一定的困難。更具體地,從在固化期間將聚合物(例如壓印抗蝕劑)沉積在基板上並在其上施加能量開始,使基板和模板對準以使每個對準標記之間的相對距離彼此在預定範圍內是困難的。
The present invention sets forth a control mechanism for controlling the operation of the imprint system described above with reference to FIGS. mesa
The pattern defined at 110 is successfully printed on
為了對準模板和基板上的標記,產生控制訊號以控制平台在XYθ方向上的移動。所述控制訊號包含一或多個參數值,這些參數值被轉換成電訊號,所述電訊號被施加到平台馬達(未顯示)以將平台移動到所需的目標位置。構成控制訊號的參數值可以是指示移動發生時刻的加速度值、速度值、旋轉值和時間值中的任何一或多個。 In order to align the template and the marks on the substrate, control signals are generated to control the movement of the stage in the XYθ direction. The control signal includes one or more parameter values that are converted into electrical signals that are applied to a platform motor (not shown) to move the platform to a desired target position. The parameter values constituting the control signal may be any one or more of an acceleration value, a velocity value, a rotation value and a time value indicating when the movement occurs.
取決於對準處理期間確定的參數值,致使兩個常見問題之一。一個可能的問題與目標位置的過衝有關,因為一或多個參數值共同導致了致使平台移動的軌跡,以使基板上的標記穿越模板上的標記,從而需要進一步校正對準。另一個可能的問題與停轉有關。停轉表示致使平台移動太慢之控制訊號的參數值。如此,穿過模板施加到基板上的能量使液體抗蝕劑固化並聚合,從而致使在標記被對準之前使對準處理停轉。透過使用本文所述的控
制演算法,透過每個樣本至少使用兩個與回饋訊號整合在一起的前饋訊號來解決這些問題,以便不斷修改和更新用於使平台移向目標位置的控制訊號。透過連續地監控相對於模板的位置的平台和基板的位置資訊,並且使用這些測量值,如本文所描述的系統成功地更迅速減少對準標記之間的誤差值,而不對基板102的特性有負面影響,並且在可聚合材料134聚合之前的預定時間量內。
Depending on the parameter values determined during the alignment process, one of two common problems results. One possible problem is related to overshooting of the target position, as one or more parameter values together result in a trajectory that causes the stage to move such that a mark on the substrate crosses a mark on the template, necessitating further alignment corrections. Another possible problem has to do with stalling. Stall represents the parameter value of the control signal that caused the platform to move too slowly. As such, the energy applied to the substrate across the template cures and polymerizes the liquid resist, causing the alignment process to stall until the marks are aligned. By using the controls described in this
An algorithm is developed to address these issues by using at least two feed-forward signals per sample that are integrated with the feedback signal in order to continuously modify and update the control signals used to move the platform towards the target position. By continuously monitoring the positional information of the stage and the substrate relative to the position of the template, and using these measurements, the system as described herein succeeds in reducing the error value between the alignment marks more rapidly without compromising the characteristics of the
圖4顯示用於前饋和回饋控制的範例控制方塊圖。如本文所述的控制系統被顯示為體現為圖1所示的系統100中的控制器144的一部分。控制器144包含至少一個中央處理單元(CPU)和記憶體,並且可以執行儲存在記憶體中的指令,以執行所描述的操作和/或功能中的一或多者。控制器144與一或多個記憶體(例如RAM和/或ROM)進行通訊,並且在某些情況下執行儲存的指令以執行一或多個控制操作。在其它情況下,控制器144可以將資料臨時儲存在一或多個記憶體中,所述記憶體用於在下文中描述的各種訊號的計算和產生中。因此,控制器144透過使用電腦程式(可由CPU執行的一或多個一連串的儲存指令)和儲存在RAM和/或ROM中的資料來控制圖1的系統100。在此,控制器144可以包含與CPU不同的一或多個專用硬體或圖形處理單元(GPU)(或者可以與之通訊),並且GPU或專用硬體可以由CPU執行部分處理。作為專用硬體的範例,有特殊應用積體電路(ASIC)、現場可程式化閘陣列(FPGA)和數位訊號處理器(DSP)等。在一個實施例中,控
制系統100可以被實現為如圖1所示的控制器144的一部分。在一些實施例中,控制器144可以是專用控制器。在其它實施例中,控制系統100可以包含彼此通訊的複數個控制器以及控制系統100的其它元件以實現本文描述的操作。
Figure 4 shows an example control block diagram for feedforward and feedback control. A control system as described herein is shown embodied as part of
在下文中,將描述執行根據本發明的控制功能的圖4的方塊圖。儘管以下參考各種控制器,但是在某些實施例中,每個控制器可以包含一系列儲存的指令,這些指令由控制器144的CPU執行以執行所描述的功能。在其它實施例中,本文描述的每個控制器可以被體現為各自具有它們自己的CPU和記憶體的單獨積體電路,並且專用於執行與其相關的處理。在其它實施例中,本文描述的一或多個控制器可以體現為單一積體電路。此外,在一些實施例中,所描述的一些控制器可以是專用處理單元,並且與正在執行儲存的指令的控制器的CPU進行通訊,以完成本文描述的功能操作。
Hereinafter, the block diagram of FIG. 4 that performs the control function according to the present invention will be described. Although reference is made below to various controllers, in some embodiments, each controller may contain a stored series of instructions that are executed by the CPU of
圖4包含感測器158、前饋控制器410、對準回饋控制器430、平台回饋控制器450和平台放大器470(在下文中稱為「放大器470」)。位於上述元件之間的是複數個接面,這些接面將對應控制器輸出的訊號合併,這些控制器透過相加、相減或卷積來饋送訊號。上述的每個元件的操作如下述,以便使支撐基板的平台移動到表示預定對準誤差範圍內的對準誤差值的目標位置。在一個實施例中,目標位置表示實質上為零的對準誤差值,其指示基板
上的標記與模板上的標記直接對準。
4 includes a
對準回饋控制器430和平台回饋控制器450中之各者可以執行為比例積分微分(PID)控制器或任何其它回饋控制器。這樣做時,用於處理各個輸入訊號以產生輸出訊號的範例性控制功能可以是諸如
其中K p 、K i 和K d 分別表示比例、積分和微分控制項,用於控制體現所述控制器的特定操作。由回饋控制器執行的所述控制功能的方式是已知的,並且不需要進一步描述,並且基於在其中接收的輸入來連續地計算誤差值。第一接面420位於前饋控制器410和感測器158之間,並透過獲取第一前饋控制訊號412和表示相對於基板上的標記的模板上的標記的位置的測量訊號402之差異來產生第一輸入訊號422給對準回饋控制器430。第一前饋訊號412表示對準參考軌跡資訊,並且基於測量訊號402和儲存在記憶體中的參考軌跡資訊來產生。第一前饋訊號412包含至少一個參數,所述參數定義用於控制平台的移動操作的一或多個態樣。例如,至少一個參數可以包含以下的一或多者:用於沿著所確定的軌跡啟動所述平台的移動(a)所需的位置值,(b)所需的速度值,(c)所需的加速度值;(d)所需的旋轉值,以及(e)所需的起始時間。第一前饋訊號可以是相位平面(Phase Plane)(x軸:位置,y軸:速度)中的前饋軌跡,接著將其映射到時域(x軸:時間,y軸:位置),以
產生基於每個樣本的前饋訊號。根據從前饋和回饋訊號觀察到的摩擦變化,透過迭代學習和模型預測,可以離線或線上最佳化相位平面中的軌跡。這種最佳化是為了以最小的振盪實現最小的過衝(overshoot)和下衝(undershoot),並收斂時間,使模板和基板上的標記彼此對準。
where K p , K i and K d represent proportional, integral and derivative control terms, respectively, for controlling specific operations embodying the controller. The manner in which said control function is performed by a feedback controller is known and requires no further description, and error values are continuously calculated based on inputs received therein. The
透過利用基板相對於模板的即時測量位置以及參考軌跡資訊,第一前饋訊號412可以表示位置-速度相位平面中的多項式或指數衰減線,其被轉換到時域。以此方式,透過將第一前饋訊號412的對準參考軌跡資訊與從感測器158即時獲取的在測量訊號402中編碼的測量位置值進行組合,對準控制器430可以產生對準軌跡(有時稱為控制命令或控制作用力),其可以更快地對準基板和模板上的標記。對準控制器430基於第一輸入訊號422產生對準軌跡資訊432,並且將對準軌跡資訊432輸出到第二接面440。換句話說,對準回饋控制器根據方程式來連續計算對準誤差值eTTM(t)=FF1(t)-POSTTM(t)
By utilizing the real-time measured position of the substrate relative to the template and the reference trajectory information, the
其中eTTM表示在給定時間的誤差值,FF1是由前饋控制器410產生的第一前饋訊號412的值,而POSTTM是由感測器158獲取的相對於由平台106支撐的基板的模板的當前位置。在計算誤差值之後,對準回饋控制器430將對準軌跡資訊輸出為U AL (t)。如下述,將使用對準軌跡資訊432來產生使平台沿其移動以便對準基板和模板的軌跡(或控制作用力)。
where e TTM represents the error value at a given time, FF 1 is the value of the
前饋控制器410還輸出第二前饋控制訊號414至第二接面440。在一個實施例中,第一前饋訊號412和第二前饋訊號414是相同的。在另一個實施例中,基於第一前饋訊號412產生第二前饋訊號。例如,在一個實施例中,第二前饋訊號414可以是第一前饋訊號412的幅度或時移版本,其中第一前饋訊號412從初始起始時間開始轉移。例如,在一個實施例中,第二前饋訊號414 FF2可以是第一前饋訊號412 FF1的幅度移位版本,其中第一前饋訊號412的幅度FF shift 移位如下式所示。
The
FF 2(t)=FF 1(t)+FF shift FF 2 ( t ) = FF 1 ( t ) + FF shift
因此,如果平台將要移動到的目標位置表示實質上為零的對準誤差,則第二前饋訊號414具有與第一前饋訊號412相同的值,但是與開始於所測量的位置402的第一前饋訊號412相比,其從零目標位置開始。產生第二前饋訊號414的其它範例包含將轉換函數f( )施加到第一前饋訊號412,如下面的方程式所述。其中f( )是包含時間移位的非線性轉換。
Thus, if the target position to which the stage is to be moved represents substantially zero alignment error, the second feed-forward signal 414 has the same value as the first feed-
FF 2(t)=f(FF 1(t)) FF 2 ( t ) = f ( FF 1 ( t ))
所述轉換函數f( )可以表示非線性摩擦,其致使透過平台位置感測器476和標記感測器158感測的移動的去同步。在另一個實施例中,第二前饋訊號414係獨立於第一前饋訊號412產生。
The transfer function f ( ) may represent non-linear friction that causes desynchronization of movement sensed through
除了對準軌跡資訊432和第二前饋訊號414之外,第二接面440接收從放大器470的平台位置感測器476
獲取的平台位置資訊474作為輸入。平台位置資訊474表示在放大器470請求的平台移動操作結束時平台106的當前測量位置。第二接面440將對準資訊432與第二前饋訊號414組合,接著獲取組合訊號與平台位置資訊474之間的差異以產生第二輸入訊號442。第二輸入訊號442被輸入到平台回饋控制器,並產生平台軌跡資訊452作為其輸出。雖然顯示平台位置感測器476與平台106分離,但是這僅是範例性的,並且被顯示為便於理解系統操作。應當理解,平台位置感測器476可以包含在平台106中。
In addition to the
應當注意,儘管兩個回饋訊號都是從每個樣本的平台106的操作得到的,但是由平台位置感測器476和標記感測器回饋402感測的平台感測器回饋474不是相同的訊號。這是因為標記感測器回饋402和平台感測器回饋474不在同一座標空間中,因此不同步。關於其中存在這些座標空間的座標空間,平台感測器回饋474具有通常被設置為零的原始位置,並且在全局座標系中被設置為與整個設備(例如機器)相同。然而,當模板與基板之間的標記誤差為零時,標記感測器回饋402被設置為零。這可以在圖3中看到為X0。標記感測器158的座標空間是與模板和基板之間相關的空間。換句話說,產生標記感測器回饋402的標記感測器158的座標空間是局部座標系。透過考慮兩個座標空間的移位來產生體現為前饋訊號412和414的預測資訊。
It should be noted that the
除了由於不同的座標空間而致使的移位之
外,模板與基板之間的非線性摩擦還可能致使非線性縮放,以及第一前饋訊號412與第二前饋訊號414之間的時間和幅度移位。例如,在這種極端情況下,即使平台感測器回饋474指示平台106正在移動,基板和模板之間的非常大的摩擦也會致使標記感測器158檢測到發生了停轉(stall)(例如,基板和模板黏在一起)。在諸如此類的實施例中,第一前饋訊號412和第二前饋訊號414的產生可能需要執行非線性轉換函數作為前饋控制器410的操作的一部分。
In addition to shifts due to different coordinate spaces
In addition, non-linear friction between the template and the substrate may also cause non-linear scaling and time and amplitude shifts between the
平台回饋控制器450連續計算與如由放大器470控制的平台的位置相關的誤差值。誤差值可以透過平台回饋控制器450使用下面的方程式被計算:e stage (t)=U AL (t)+FF 2(t)-POS stage (t)
其中e stage 表示平台位置的誤差值,U AL (t)表示對準軌跡資訊432,表示第二前饋訊號414(例如,FF 1 (t)的恆定移位(FF shift )相加形式)的FF 2 (t)與POS stage 是由放大器470操作並由平台位置感測器476感測的平台106的當前位置。在此處理中,第二前饋訊號414(FF 2 (t))還包含與來自第一前饋訊號412的至少一個參數值相關的值。在一個實施例中,第二前饋訊號414中的參數值與第一前饋訊號412中的參數值相同,除了由於上面討論的恆定偏移而增加的偏移之外。在另一實施例中,鑑於被確定為對準軌跡資訊處理的一部分的誤差值,表示移動控制(例如,位置、速度、旋轉、加速度)的至少一個參數值中的一或多個可基於確定的誤差值而被更新,從而改善了平台回饋控制器450輸出
的平台軌跡資訊452。
where e stage represents the error value of the platform position, U AL (t) represents the
在一個實施例中,平台軌跡資訊452直接輸出到放大器470,其將平台軌跡資訊452轉換成電訊號,接著將其施加到平台106(如圖1所示)以驅動平台106朝目標位置前進。在訊號452中所定義的平台軌跡的端部的平台移動的結尾,平台放大器470內從平台回饋控制器450獲取命令,並且輸出此命令作為用於產生平台移動的平台電訊號。新的平台位置係透過平台位置感測器獲取,並被回饋到第二接面440中,並用於確定如上所述的誤差值。平台控制命令資訊452可以輸出為U stage (t)(輸出控制訊號472)。
In one embodiment, the
在另一個實施例中,如圖4所示,控制系統包含設置在平台回饋控制器450和平台放大器470之間的第三接面460。第三接面460將平台軌跡資訊452與由前饋控制器410產生並輸出的第三前饋訊號416結合。第三前饋訊號416是移動控制命令預測訊號。在一個實施例中,它是透過獲取對準誤差基本上為零的平台的目標位置與第二前饋訊號414之間的差異並將所述差異乘以平台回饋控制器450用來控制平台106(圖1)的移動的比例增益而產生的。可以根據以下方程式來計算第三前饋訊號416:FF 3=(POS target -FF 2(t))* P gain In another embodiment, as shown in FIG. 4 , the control system includes a
其中FF 3是第三前饋訊號416,POS target 表示對準誤差基本上為零的目標平台位置,而P gain 表示由平台回饋控制器450施加以控制平台移動的增益。第三接面460結合FF 3和U stage (t),以產生平台移動控制訊號462作為平台放大器470
的輸入。平台放大器470將訊號轉換成電壓或電流(輸出控制訊號472),其用於根據透過組合第三前饋訊號416(FF 3)和平台命令資訊452(U stage (t))產生的移動控制訊號來驅動平台106。
Where FF 3 is the
透過產生和使用第三前饋訊號416以及平台軌跡資訊452,由平台回饋控制器處理致使的相位延遲更少,這致使更快的對準。透過使用第三前饋訊號416呈現的另一優點允許更大的設計自由度,以減少剪力並克服在對準和固化程序中的靜摩擦和非線性移動摩擦。此外,第三前饋訊號416集中在第二前饋訊號414與目標位置之間的殘餘誤差。這有利地透過基於第三前饋訊號416更新平台軌跡資訊來提高平台軌跡資訊的調諧能力,以使平台沿著將更快地對準基板和模板上的標記的軌跡移動。它也可用於最小化由模板和基板之間的非線性摩擦致使的第一和第二前饋之間的去同步;並且在處理較小的回饋誤差時降低了回饋控制器430和450設計的複雜性。
By generating and using the
基於以上內容,圖4的控制系統有利地使得第一和第二前饋訊號能夠著眼於各自的回饋迴路,從而使得回饋控制器430和平台回饋控制器450對準,能夠更容易地被調諧,因為它們的處理著眼於當前位置與由前饋控制器410產生的各自第一和第二前饋軌跡資訊之間的殘餘誤差。這允許第三前饋訊號基於由前一平台軌跡定義的平台的最新終點位置,以使所述平台更接近目標位置。圖7中顯示說明前饋訊號的範例性時間軌跡。沿x軸顯示以秒呈
現的時間,y軸顯示以奈米呈現的位置。這顯示在特定時間的位置不同,顯示基板和模板之間距目標位置的相對距離。在圖7中,目標標記對準由標記為702的目標標記距離0表示。第一前饋訊號412是基於由標記感測器158感測到的位置資訊,並在初始時間0秒略微之後開始的。如本文所指示,第一前饋訊號412用於產生對準軌跡資訊。具有實質上與第一前饋訊號412的相同特性的第二前饋訊號414被偏移添加,並且不是在由感測器158感測到的位置開始,被重新初始化,以從當前平台位置開始,其可以是零的首次初始化或重新初始化前的最後平台位置。如本文所示,第二前饋訊號414用於產生平台軌跡資訊。基於此,實質上同時,表示移動控制命令預測資訊的第三前饋訊號416係基於第二前饋訊號414產生。因此,隨著時間的流逝,感測的標記位置如同在對準軌跡和指出基板和模板的對準的移動預測資訊收斂中指示的。
Based on the above, the control system of FIG. 4 advantageously enables the first and second feedforward signals to be focused on the respective feedback loops, so that the
如果來自標記感測器的初始誤差在預定範圍內,則前饋控制器使用目標標記位置來替換第一前饋,並且將第二和第三前饋設置為零。如果來自標記感測器的初始誤差在預定範圍之外時,則將會產生第一前饋使此標記誤差為零,並且所述第二和第三前饋將根據上述描述來產生。如果所產生的前饋已經使用,並且來自標記感測器的追蹤的結尾的標記誤差仍然比預定範圍大,則前饋將基於在前饋的結尾的標記誤差作為新的初始誤差來重新產生。第二前饋也將透過使用前一個前饋追蹤的結尾作為起點來 重新產生。預定範圍可以是基於標記感測器誤差的位置、速度或加速度。如果來自標記感測器的誤差在前饋完成最後一個樣本之前到達目標,則前饋訊號可以跳到最後一個樣本或一直持續直到最後一個樣本。 If the initial error from the marker sensor is within a predetermined range, the feedforward controller replaces the first feedforward with the target marker position and sets the second and third feedforwards to zero. If the initial error from the mark sensor is outside a predetermined range, a first feedforward will be generated to zero the mark error, and the second and third feedforwards will be generated as described above. If the generated feedforward has been used, and the marker error from the end of the track of the marker sensor is still greater than a predetermined range, the feedforward will be regenerated based on the marker error at the end of the feedforward as a new initial error. The second feedforward will also be done by using the end of the previous feedforward trace as the starting point reproduce. The predetermined range may be position, velocity or acceleration based on marker sensor error. If the error from the marker sensor reaches the target before the feedforward completes the last sample, the feedforward signal can skip to the last sample or continue until the last sample.
當參見圖8A和8B時,由現有控制系統呈現的第三前饋的其它優點是顯而易見的,圖8A和8B是平台到達目標位置並使用兩個前饋控制訊號(圖8A)和三個前饋控制訊號(圖8B)來對準基板和模板所花費的時間長度的圖形表示。從圖8B中可以看出,與圖8A相比,減少了所有跡線收斂到零的目標位置的時間。這是克服時間延遲和靜摩擦的第三前饋的直接結果。顯示的另一個好處是在比第三前饋更小的平台移動控制訊號的結尾比只有兩個前饋的方案更快克服停轉。在為聚合提供能量時,較小的平台控制命令接近於對準的端部的力可以減少由可聚合材料134經歷的力的量。
Additional advantages of the third feed-forward presented by existing control systems are apparent when referring to Figures 8A and 8B, which show the platform reaching the target position and using two feed-forward control signals (Figure 8A) and three feed-forward A graphical representation of the length of time it takes to feed the control signal (FIG. 8B) to align the substrate and template. It can be seen from Figure 8B that the time for all traces to converge to the target position of zero is reduced compared to Figure 8A. This is a direct result of the third feed-forward that overcomes time delays and stiction. Another benefit shown is that at the end of the platform movement control signal smaller than the third feedforward, stalls are overcome faster than the scheme with only two feedforwards. A smaller platform control command force proximate to the aligned end can reduce the amount of force experienced by the
雖然圖4顯示由各種控制器和感測器體現的總體控制系統,圖5A-5C顯示用於如何體現各個元件的額外配置。圖5A顯示產生了兩個前饋控制訊號並將其與上述各種回饋控制訊號整合的實施例中的前饋控制器410的更詳細視圖。如本文所示,每個方塊可以表示執行上述計算的對應CPU。在圖5A中,前饋控制器410可以包含第一前饋產生器502,其是從感測器158接收輸入以產生表示對準參考軌跡資訊的第一前饋控制訊號412的處理單元(CPU)。此外,第一前饋產生器502可以將第一前饋訊號輸出到作
為處理單元的第二前饋產生器504(與第一前饋產生器相同或單獨的CPU)。接著,第二前饋產生器504產生第二前饋訊號414,以輸出到平台控制器450。雖然在此顯示為直接輸出到控制器430和450的訊號,但是應當注意,這可以指示輸出到在圖4中所討論的各個接面。可替換地,透過接面處執行的功能可以在回饋控制器430和平台回饋控制器450的每個對準中封裝。圖5B顯示可以產生包含移動預測資訊的第三前饋訊號的實施例。在此實施例中,前饋控制器410包含第三前饋產生器506,其本身可以是其自己的處理單元CPU,或者可以是具有第一和第二前饋產生器中的一個或兩個的處理單元的一部分。進一步如圖5B的虛線框所示,範例性配置將前饋控制器410和對準回饋控制器430體現在與平台回饋控制器450單獨的單一處理單元上。圖5C包含與圖5B所示的元件類似的元件,除了虛線框指示前饋控制器410、對準回饋控制器430和平台回饋控制器450被體現在單一處理單元上之外。
While FIG. 4 shows the overall control system embodied by various controllers and sensors, FIGS. 5A-5C show additional configurations for how the individual elements are embodied. Figure 5A shows a more detailed view of the
應當理解,以上描述的前饋控制器410顯示至少兩個但有時三個前饋訊號被產生並用於控制平台106的移動。如上所述,可以透過使用第一前饋訊號412和第二前饋訊號414來執行此控制。此外,以上描述指出第三前饋訊號416可以與第一前饋訊號412和第二前饋訊號414結合使用。還應該理解的是所述演算法可以進一步也僅連同第三前饋訊號416使用第一前饋訊號。可替代地,也可以僅使用第二前饋訊號414和第三前饋訊號416。關於這三
個前饋訊號的方式和時間的確定取決於所執行的誤差計算,以及所計算的誤差是否在預定範圍之外,從而需要產生更多(或更少)的主動預測資訊來控制平台移動,以使模板上的標記與基板上的標記對準。前饋訊號(412、414、416)的各種組合的目標可以是在控制作用力之前預測一組快速且穩定的位置和控制軌跡。另一個目標可能是使回饋誤差(422和442)盡可能小。在實施例中,同步的三個前饋之間有一個理想的關係,其可以被寫成如下:Sys 412(FF 1)=Sys 414(FF 2)+Sys 416(FF 3)
It should be appreciated that the
其中Sys xxx 表示具有到前饋訊號412、414和416之輸入的開迴路系統響應。在另一個實施例中,三個前饋訊號的波形可由模型參照設計、迭代學習,和/或重複控制來確定。在實施例中,兩個或更多的前饋訊號可基於下列中的一或多者被最佳化:平台對準和標記對準之間的協調系統差異、基板和模板之間的非線性摩擦。 where Sys xxx represents the open loop system response with inputs to the feedforward signals 412 , 414 and 416 . In another embodiment, the waveforms of the three feedforward signals can be determined by model reference design, iterative learning, and/or repetitive control. In an embodiment, two or more feed-forward signals may be optimized based on one or more of: coordinated system differences between stage alignment and marker alignment, non-linearity between substrate and template friction.
現在轉向圖6,其顯示根據本發明實施例的用於實現對準控制的範例性控制演算法。以下描述將利用與圖1至圖4相關的參考符號來表示執行演算法控制的處理單元。如本文所示,所述演算法表示控制其上支撐有基板的可移動平台的位置的方法。在步驟S602中,透過感測器158獲取表示基板相對於模板上的標記的測量位置的第一位置資訊。第一位置資訊表示平台106的當前測量位置以及基板和模板上的標記之間的相對距離。第一位置資訊被提供給前饋控制器410和對準回饋控制器430中之各者。
Turning now to FIG. 6 , an exemplary control algorithm for implementing alignment control is shown in accordance with an embodiment of the present invention. The following description will use reference symbols related to FIGS. 1 to 4 to denote processing units that perform algorithmic control. As indicated herein, the algorithm represents a method of controlling the position of the movable platform on which the substrate is supported. In step S602 , first position information indicating the measured position of the substrate relative to the mark on the template is acquired through the
在步驟S604中,前饋控制器410基於所獲取的第一位置來產生對準參考軌跡資訊。所產生的對準參考軌跡資訊表示第一、第二和第三前饋訊號412、414和416,從前饋控制器410輸出且包含用於控制可移動平台到目標位置的移動的至少一個參數值,以使基板和模板上的標記之間的確定對準誤差實質上為零。所述至少一個參數包含下列各者中的一或多者:用於沿著所確定的軌跡啟動所述平台的移動(a)所需的位置值,(b)所需的速度值,(c)所需的加速度值,以及(d)所需的起始時間。
In step S604 , the
在步驟S606中,由對準回饋控制器產生第一軌跡資訊。第一軌跡資訊表示由對準回饋控制器420輸出的對準軌跡資訊,並且包含基於所獲取的第一位置資訊和所產生的對準預測資訊的至少一個參數值。第一軌跡資訊是透過獲取所獲取的第一位置資訊和前饋對準參考軌跡資訊之間的差異而產生的第一回饋訊號422。
In step S606, the alignment feedback controller generates first trajectory information. The first trajectory information represents the alignment trajectory information output by the
在步驟S608中,產生第二軌跡資訊452。第二軌跡資訊452由平台回饋控制器450產生,並且基於對準預測資訊和414產生,誤差值是從第二參考軌跡資訊432和表示可移動平台的當前位置的平台位置資訊474確定的。如此,所產生的第二軌跡資訊452包含已經更新的至少一個參數值,所述參數值已基於計算出的誤差值而被更新。第二軌跡資訊表示透過組合第二前饋訊號414、對準軌跡資訊432和表示平台106的當前位置的位置訊號而產生的第二回饋訊號。在某些實施例中,S608還可包含第二誤差確
定處理,其基於可移動平台的當前位置來確定第二誤差值,所述可移動平台係根據第二軌跡資訊和目標位置而移動。
In step S608, the
在步驟S610中,平台回饋控制器450產生包含所述經更新的至少一個參數值的輸出控制訊號472,並將所述控制訊號輸出到平台放大器470,所述平台放大器470在步驟S612中,基於所產生的輸出訊號來控制可移動平台以接近目標位置。在步驟S610中產生的輸出控制訊號472還可以包含由上述第二誤差處理確定的第三前饋訊號,使得平台可以在步驟S612中被控制,以根據更新的參數值移動。
In step S610, the
在步驟S614中,由感測器158確定標記是否與基板上的標記和模板上的標記的相對位置相關的誤差值在預定誤差範圍內。如果在S614中的確定結果為肯定的,則指出誤差值在可接受的範圍內,所述確定指示模板上的標記和基板上的標記彼此對準,並且控制演算法在S615中結束。
In step S614, it is determined by the
如果確定結果是否定的,則指出基板上的標記和模板上的標記未對準。在這種情況下,演算法重複步驟S602-S612。如此,更新了以上本文中描述的每個資訊和軌跡值,使得基於回饋和前饋控制兩者來修改其中包含的並且用於控制平台的移動的一或多個參數。這些更新是基於在可移動平台已經根據輸出控制訊號472移動並且到達了不是目標位置的最終位置之後,由感測器獲取的更新
的第一位置資訊。
If the determination is negative, it indicates that the marks on the substrate and the marks on the template are not aligned. In this case, the algorithm repeats steps S602-S612. As such, each of the information and trajectory values described herein above are updated such that one or more parameters contained therein and used to control the movement of the platform are modified based on both feedback and feedforward control. These updates are based on updates obtained by the sensors after the movable platform has moved according to the
除了重複步驟S602-S612之外,響應於否定的確定,演算法在步驟S616中產生移動預測資訊作為第三前饋訊號416。如此,響應於基於輸出控制訊號472確定可移動平台的最終位置距目標位置預定距離之外(例如,誤差值大於預定誤差臨界值),則移動控制器預測資訊被產生並且包含基於可移動平台的最終位置確定的經更新的至少一個參數值。所述經更新的至少一個參數值係基於最終位置和第二軌跡資訊之間的差異來更新。將移動控制器預測資訊與第二軌跡資訊組合以產生所述經更新的輸出控制訊號472,接著將其用於基於所述經更新的輸出控制訊號472來控制可移動平台。
In addition to repeating steps S602-S612, in response to a negative determination, the algorithm generates motion prediction information as a
根據以上描述的演算法,模板與基板的相對位置可以透過接收表示模板上的標記相對於基板上的對準標記的相對位置的對準資訊來成功地控制。前饋對準軌跡基於對準資訊接著被產生,並且可以包含諸如前饋對準軌跡的所需的位置、所需的速度、所需的加速度和所需的起始時間中的一或多個的參數。基於此,可以產生對準誤差時間序列,所述對準誤差時間序列表示前饋對準軌跡減去所測得的對準軌跡,其中這些軌跡皆包含一或多個參數,諸如位置、速度和加速度。對準誤差時間序列可以轉換為對準閉迴路回饋控制輸出時間序列,接著將其用於產生由放大器使用的平台軌跡資訊作為輸入資訊,作為對準閉迴路回饋控制輸出時間序列加上平台前饋軌跡之和。平台回 饋控制器從平台位置感測器接收平台控制器輸入資訊和回饋資訊,所述平台位置感測器測量平台的位置並不斷更新和修改平台軌跡資訊,接著由平台回饋控制器使用所述平台軌跡資訊來驅動平台的位置邁向目標。 According to the algorithm described above, the relative position of the template and the substrate can be successfully controlled by receiving alignment information representing the relative position of the marks on the template with respect to the alignment marks on the substrate. A feed-forward alignment trajectory is then generated based on the alignment information and may contain one or more of desired position, desired velocity, desired acceleration, and desired start time such as a feed-forward alignment trajectory parameters. Based on this, an alignment error time series can be generated that represents the feed-forward alignment trajectory minus the measured alignment trajectory, where these trajectories each contain one or more parameters, such as position, velocity, and acceleration. The alignment error time series can be transformed into an alignment closed-loop feedback control output time series, which is then used to generate platform trajectory information used by the amplifier as input information, as an alignment closed-loop feedback control output time series plus platform feed-forward sum of trajectories. platform back The feedback controller receives platform controller input information and feedback information from the platform position sensor, which measures the position of the platform and continuously updates and modifies the platform trajectory information, and then the platform feedback controller uses the platform trajectory information to drive the position of the platform towards the goal.
本發明提供了一種動態前饋重新初始化機構,如果平台的最終位置導致平台不在目標位置的預定臨界值內,其用以產生新的前饋的軌跡資訊。在這種方式中,前饋控制器被重新初始化,以基於平台最近的位置來產生經更新的前饋訊號,並透過感測基板和模板之間的相對位置的感測器158來確定。由於前饋重新初始化,位置誤差可以與回饋增益和整體系統的複雜性一起降低。在操作中,測量基板和模板之間的相對距離的感測器158被用來測量平台移動的絕對距離。在獲取第一樣本時,所產生的前饋基於感測器資料在初始位置處開始,並且隨後重新初始化的前饋係用以從總體控制作用力開始,從而致使在上一個樣本期間的平台最終位置。因此,雙回饋環路可以在每次前饋重新初始化的開始時重新初始化。此操作有利地使得當前描述的控制系統能夠為壓印微影提供快速一致的對準,並且在壓印開始時補償液體抗蝕劑的液體內部分和基板的物理變化。上述演算法克服了與回饋控制系統相關的變化和非線性相關的缺點,以減少壓印微影期間的過衝、下衝和停轉。因此,本文提供的控制演算法提高了從基板大量生產一或多種物品的產量和效率。
The present invention provides a dynamic feed-forward re-initialization mechanism for generating new feed-forward trajectory information if the final position of the platform results in the platform not being within a predetermined threshold of the target position. In this manner, the feedforward controller is reinitialized to generate an updated feedforward signal based on the most recent position of the stage, as determined by the
因此,上文詳述的控制演算法可用於半導體 製造的程序中,以製造一或多個物品或裝置。根據以上本文描述的控制演算法對已經成功對準的基板進行處理的這些程序包含但不限於:壓印微影;以及微影;烘烤;氧化;層形成;沉積;摻雜;蝕刻;脫渣;切割;接合;封裝;等。可以使用用於物品製造的其它已知步驟和程序進一步處理基板,包含例如檢查、固化、氧化、層形成、沉積、摻雜、平面化、蝕刻、可成形材料移除、切割、接合、封裝,等等。基於上述,可以對基板進行處理以生產複數個物品(裝置)。 Therefore, the control algorithm detailed above can be applied to semiconductor The process of manufacturing to manufacture one or more articles or devices. These procedures for processing successfully aligned substrates according to the control algorithms described herein above include, but are not limited to: imprint lithography; and lithography; baking; oxidation; layer formation; deposition; doping; etching; stripping slag; cutting; bonding; encapsulation; etc. The substrate may be further processed using other known steps and procedures for article manufacture, including for example inspection, curing, oxidation, layer formation, deposition, doping, planarization, etching, formable material removal, dicing, bonding, encapsulation, etc. Based on the above, a substrate can be processed to produce a plurality of items (devices).
在一個範例中,所述處理可以包含在基板上分配壓印抗蝕劑(例如液體),並使所述壓印抗蝕劑與物體接觸,使得其上具有圖案的物體接觸所述壓印抗蝕劑。所述處理包含對準處理,以將基板和物體(例如,模板)對準至預定對準位置,接著處理其上已經分配了壓印抗蝕劑的基板,以製造製品。因此,將能量施加到基板上以固化抗蝕劑並在基板上形成與模板上的圖案相對應的圖案。重複執行此程序,以便在抗蝕劑被施加的能量固化之前,將物體和基板對準。 In one example, the process may include dispensing an imprint resist (eg, a liquid) on the substrate and contacting the imprint resist with an object such that the object having the pattern thereon contacts the imprint resist. etchant. The process includes an alignment process to align a substrate and an object (eg, a template) to a predetermined alignment position, followed by processing the substrate on which the imprint resist has been dispensed to manufacture an article. Thus, energy is applied to the substrate to cure the resist and form a pattern on the substrate corresponding to the pattern on the template. This procedure is repeated to align the object and substrate before the resist is cured by the applied energy.
已經描述了許多實施方式。然而,將理解的是,在不脫離本發明的精神和範圍的情況下,可以做出各種修改。因此,其它實施方式在所附申請專利範圍的範圍內。 A number of implementations have been described. However, it will be understood that various modifications may be made without departing from the spirit and scope of the invention. Accordingly, other implementations are within the scope of the appended claims.
本發明的實施例可以透過經由網路或儲存媒體向系統或設備提供實現上述實施例的一或多個功能並利 用系統或設備的電腦中的一或多個處理器來讀取並執行的程式來執行。此外,本發明的實施例可以由實現一或多個功能的電路(例如,特殊應用積體電路(ASIC))來執行。 The embodiments of the present invention can implement one or more functions of the above-mentioned embodiments and utilize Executed by programs that are read and executed by one or more processors in the computer of the system or device. Additionally, embodiments of the invention may be implemented by circuitry (eg, an application specific integrated circuit (ASIC)) that performs one or more functions.
本發明的實施例還可以透過一種系統或設備的電腦來實現,所述系統或設備可以讀取並執行記錄在儲存媒體(也可以更完整地稱為「非暫態電腦可讀取儲存媒體」)上的電腦可執行指令(例如,一或多個程式)來執行一或多個上述實施例的功能,和/或包含一或多個電路(例如,特殊應用積體電路(ASIC)),以執行上述一或多個實施例中的一或多個功能,並透過所述系統或設備的電腦執行的方法,例如從儲存媒體中讀取並執行電腦可執行指令,以執行上述一或多個實施例中的一或多個功能和/或控制一或多個電路以執行上述一或多個實施例中的一或多個功能。所述電腦可以包含一或多個處理器(例如,中央處理單元(CPU)、微處理單元(MPU)),並且可以包含單獨的電腦或單獨的處理器的網路,以讀取並執行電腦可執行指令。可以例如從網路或儲存媒體將電腦可執行指令提供給電腦。所述儲存媒體可以包含例如硬碟、隨機存取記憶體(RAM)、唯讀記憶體(ROM)、分佈式計算系統的儲存、光學碟(諸如光碟(CD))、數位多功能光碟(DVD)或藍光光碟(BD)TM)、快閃記憶體裝置、記憶卡等中的一或多個。 Embodiments of the present invention can also be implemented by a computer of a system or device that can read and execute the ) on computer-executable instructions (eg, one or more programs) to perform the functions of one or more of the above-described embodiments, and/or include one or more circuits (eg, an application-specific integrated circuit (ASIC)), To perform one or more functions in the above-mentioned one or more embodiments, and through the computer-executed method of the system or device, for example, reading and executing computer-executable instructions from a storage medium to perform the above-mentioned one or more One or more functions in one embodiment and/or control one or more circuits to perform one or more functions in one or more embodiments above. The computer may include one or more processors (e.g., central processing unit (CPU), microprocessing unit (MPU)), and may include individual computers or networks of individual processors to read and execute computer Executable instructions. Computer-executable instructions may be provided to a computer, for example, from a network or a storage medium. The storage media may include, for example, hard disks, random access memory (RAM), read only memory (ROM), storage for distributed computing systems, optical disks such as compact disks (CDs), digital versatile disks (DVDs), ) or one or more of Blu-ray Disc (BD) ™ ), flash memory device, memory card, etc.
在參考說明書時,闡述了具體細節以便提供對所揭露的範例的透徹理解。在其它情況下,沒有詳細描述眾所皆知的方法、程序、元件和電路,以免不必要地延 長本發明。 When referring to the specification, specific details are set forth in order to provide a thorough understanding of the disclosed examples. In other instances, well-known methods, procedures, components, and circuits have not been described in detail so as not to unnecessarily delay long the present invention.
應當理解,如果在本文中將元件或部件稱為在另一元件或部件「之上」、「相對」、「連接至」或「耦接至」另一元件或部件,則其可以直接在之上、相對、連接或耦接至另一元件或部件,或者可以存在中間元件或部件。相反,如果元件被稱為「直接在另一元件或部件之上」、「直接連接至」或「直接耦接至」另一元件或部件,則不存在中間元件或中間部件。如果使用的話,用語「和/或」包含一或多個相關列出項目的任何和所有組合。 It will be understood that if an element or component is referred to as being "on," "opposite," "connected to" or "coupled to" another element or component herein, it can be directly thereon. On, opposite, connected or coupled to another element or component, or intervening elements or components may be present. In contrast, if an element is referred to as being "directly on," "directly connected to" or "directly coupled to" another element or component, there are no intervening elements or components present. If used, the term "and/or" includes any and all combinations of one or more of the associated listed items.
為了便於描述,在本文中可以使用諸如「在...之下」、「在...下面」、「在...下方」、「低於」、「在...上方」、「高於」、「鄰近」、「遠離」等空間相對用語,以描述一個元件或特徵與另一或多個元件或特徵的關係,如各個附圖所示。然而,應當理解,除了圖中所描繪的方位之外,空間相對用語還意圖涵蓋裝置在使用或操作中的不同方位。例如,如果附圖中的裝置被翻轉,則被描述為在其它元件或特徵「在...之下」或「下方」的元件將被定向為在其它元件或特徵「之上」。因此,諸如「在...之下」的相對空間用語可以包含之上和之下兩個方位。所述裝置可以用其它方式定向(旋轉90°或以其它定向),並且在此使用的空間相對描述語應對應地解釋。類似地,在適用的情況下,相對空間用語「近側」和「遠側」也可以互換。 For ease of description, terms such as "under", "below", "below", "below", "above", "higher" may be used herein Spatially relative terms such as ", "adjacent", and "distant" are used to describe the relationship between one element or feature and another or more elements or features, as shown in the drawings. It will be understood, however, that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, a spatially relative term such as "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90° or at other orientations) and the spatially relative descriptors used herein should be interpreted accordingly. Similarly, the relative spatial terms "proximal" and "distal" are also interchangeable where applicable.
如本文所用,用語「大約」是指例如在10%以內、5%以內或以下。在一些實施例中,用語「大約」可以表示在測量誤差內。 As used herein, the term "about" means, for example, within 10%, within 5%, or less. In some embodiments, the term "about" can mean within a measurement error.
本文中可以使用第一、第二、第三等用語來描述各種元件、部件、區域、部件和/或部分。應該理解,這些元件、部件、區域、部件和/或部分不應受這些用語的限制。這些用語僅用於將一個元件、部件、區域、部件或部分與另一元件、部件、區域、部件或部分區分。因此,以下討論的第一元件、部件、區域、部件或部分可以被稱為第二元件、部件、區域、部件或部分,而不背離本文的教示。 The terms first, second, third, etc. may be used herein to describe various elements, components, regions, components and/or sections. It should be understood that these elements, components, regions, components and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, section or section from another element, component, region, section or section. Thus, a first element, component, region, component or section discussed below could be termed a second element, component, region, component or section without departing from the teachings herein.
本文所使用的用語僅是出於描述特定實施例的目的,而不是限制性的。如本文所使用的,單數形式的「一個」、「一種」和「所述」也意圖包含複數形式,除非上下文另有明確指出。應當進一步理解的是,當在本說明書中使用用語「包含」和/或「包括」時,指定存在所述特徵、整數、步驟、操作、元件和/或部件,但是不排除沒有明確說明的一或多個其它特徵、整數、步驟、操作、元件、部件和/或其群組的存在或增加。 The terminology used herein is for the purpose of describing particular embodiments only and is not limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should be further understood that when the word "comprising" and/or "comprises" is used in this specification, it specifies the presence of said features, integers, steps, operations, elements and/or parts, but does not exclude an unspecified one. or the presence or addition of multiple other features, integers, steps, operations, elements, parts and/or groups thereof.
以上僅說明了本發明的原理。根據本文的教示,對所描述的範例性實施例的各種修改和變更對於本領域技術人員將是顯而易見的。 The foregoing merely illustrates the principles of the invention. Various modifications and alterations to the described exemplary embodiments will be apparent to those skilled in the art in view of the teachings herein.
在描述的圖式中顯示的範例實施例時,為了清楚起見採用特定用語。然而,此專利說明書的揭露內容 不意於限於如此選擇的特定用語,並且應當理解,每個特定元件包含以類似方式操作的所有技術等效物。 In describing example embodiments shown in the drawings, specific terminology is employed for the sake of clarity. However, the disclosure of this patent specification It is not intended to be limited to the specific terms so selected, and it is to be understood that each specific element encompasses all technical equivalents that operate in a similar manner.
102:基板 102: Substrate
108:模板 108:Template
134:可聚合材料 134: Polymerizable material
158:感測器 158: sensor
302:模板對準標記 302: template alignment mark
304:基板對準標記 304: Substrate alignment mark
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US20210181622A1 (en) | 2021-06-17 |
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TW202122936A (en) | 2021-06-16 |
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