TWI793605B - 積體電路裝置、電腦系統、及封裝方法 - Google Patents
積體電路裝置、電腦系統、及封裝方法 Download PDFInfo
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- TWI793605B TWI793605B TW110117299A TW110117299A TWI793605B TW I793605 B TWI793605 B TW I793605B TW 110117299 A TW110117299 A TW 110117299A TW 110117299 A TW110117299 A TW 110117299A TW I793605 B TWI793605 B TW I793605B
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Abstract
本發明提供一種裝置,其包括一積體電路及耦接至該積體電路的一基板。該基板包括具有一第一表面之一初級層,該第一表面為該基板之一第一外表面。該初級層包括延伸穿過該初級層至該基板之一內層的一開放區域。該基板包括一次級層。該內層位於該初級層與該次級層之間。該內層包括大致平行於該初級層之該第一表面而定向的一第三表面。該內層之該第三表面之一部分經由該初級層之該開放區域暴露。第一複數個焊墊安置於經由初級層之該開放區域暴露的該內層之該第三表面的該部分上。
Description
本發明之實施例大體上係關於半導體裝配,且更特定言之,係關於使用具有暴露基板之內層之表面上的焊墊之開放區域的多層基板。
積體電路(IC)晶粒堆疊可包括將多個晶粒安裝於彼此上方之製程,其中堆疊晶粒最終封裝於單一半導體封裝中以形成離散電氣器件。堆疊IC晶粒之採用持續增加以致力於減小總體電氣器件佔據面積且改良電氣器件之電氣效能。
100:積體電路器件
102:基板
102A:初級層
102B:內層
102C:內層
102D:次級層
104:積體電路晶粒
104A:積體電路晶粒
104B:積體電路晶粒
104C:積體電路晶粒
104D:積體電路晶粒
104E:積體電路晶粒
104F:積體電路晶粒
106:表面
108:表面
110:表面
112A:電觸點
112B:電觸點
114A:焊墊
114B:焊墊
116A:開放區域
116B:開放區域
118A:焊墊
118B:焊墊
120:導電線
122:導電線
124:晶粒墊
126:晶粒墊
128A:間隔件
128B:間隔件
130:封裝
132:積體電路
200:方法
205:操作
210:操作
215:操作
220:操作
300:計算系統
310:記憶體子系統
317:處理器件
318:記憶體子系統控制器
319:局部記憶體
320:主機系統
330:記憶體器件
335:局部媒體控制器
340:記憶體器件
400:計算器件
404:處理器
408:通信邏輯單元
410:揮發性記憶體
412:非揮發性記憶體
414:圖形處理單元
416:數位信號處理器
420:晶片組
422:天線
424:顯示器/觸控式螢幕顯示器
426:觸控式螢幕控制器
428:電池
427:全球定位系統器件
432:運動共處理器/感測器
442:密碼處理器
434:揚聲器
436:攝影機
438:使用者輸入器件
440:大容量儲存器件
將自在下文所給出之詳細描述及自本發明之各種實施例的附圖更完全地理解本發明。然而,圖式不應視為將本發明限制於特定實施例,而係僅出於解釋及理解。
圖1A繪示根據本發明之一些實施例的具有導線接合至多層
基板之初級層及內層的積體電路之剖面圖。
圖1B繪示根據本發明之一些實施例的具有導線接合至多層基板之初級層及內層的積體電路之俯視圖。
圖2繪示根據本發明之一些實施例的使用具有暴露基板之內層之表面之一部分的開放區域的多層基板的流程圖。
圖3繪示根據本發明之一些實施例的包括記憶體子系統之實例計算系統。
圖4為根據本發明之實施例製造的計算器件。
晶粒堆疊包括利用IC晶粒製造一或多個晶圓。晶圓可置放於載體上且經分割以形成單一化IC晶粒。揀取且分選經單一化IC晶粒以找出功能性「良好」晶粒且移除非功能性「不良」晶粒。第一功能IC晶粒可安置(例如接合為覆晶)於多層基板(下文中稱作「基板」)上且耦接至該多層基板。第二功能IC晶粒可堆疊於第一功能IC晶粒上方。可對第二功能IC晶粒執行導線接合操作。導線接合操作可將導電線之第一端接合至第二功能IC晶粒之晶粒墊,且將導電線之第二端接合至初級層之表面上的焊墊。焊墊可為經指定用於外部電接觸之基板的表面區域,諸如導線接合之導電線。可針對第二功能IC晶粒之其他晶粒墊重複導線接合操作。在另一功能IC晶粒堆疊於第二功能晶粒上方之情形下,可重複導線接合操作。
多層基板可具有三個或更多個層,諸如初級層、一或多個內層及次級層。初級層可為一或多個功能IC晶粒堆疊於其上方之最頂層。次級層可為基板之最底層且包括將IC晶粒耦接至外部信號之多個電觸點。一或多個內層可安置於基板之初級層與次級層之間。
隨著積體電路變得愈複雜,基板上之焊墊的數目已增加。特定言之,在單一器件中使用多個IC晶粒已極大地增加器件中之晶粒墊之數目,以及基板上的焊墊之數目。已減小焊墊間距(亦即,焊墊之中心與鄰近焊墊之中心之間的距離)以致力於解決增加焊墊之數目,但已由多個因素約束。當焊墊變得過小時,可製造性變得愈具挑戰性。舉例而言,導線接合設備可缺乏在緊密的焊墊間距下執行高良率導線接合之精確度。在另一情況下,在基板製造期間可難以製造具有緊密焊墊間距之蝕刻焊墊及相關聯之連接跡線(本文中共同地稱作「導線接合手指」。此外,緊密的焊墊間距可促成寄生效應,諸如寄生電阻、寄生電容以及串擾。
在一些系統中,焊墊成角度(例如,類似於扇形,而非以水平列定向)定位於初級層上,以便保持焊墊之間的必要間距。然而,使焊墊成角度定位導致基板區域之低效使用且產生額外的可製造性挑戰。在其他系統中,焊墊之不同列在初級層上偏移以保持焊墊之間的必要間距。然而,焊墊之一個列之連接跡線可在焊墊之另一列之焊墊之間延行,此亦促成寄生效應。
本發明之態樣藉由將積體電路耦接至具有暴露位於內層處之焊墊的開放區域之多層基板來解決上述及其他缺點。基板可具有初級層、次級層及位於初級層與次級層之間的一或多個內層。初級層包括延伸穿過初級層至基板之內層的開放區域。內層之表面的一部分經由初級層之開放區域暴露。在一些實施例中,焊墊安置於初級層上及經由初級層之開放區域暴露的內層之表面之部分上。在一些實施例中,導電線可接合至積體電路之一或多個IC晶粒及內層處之焊墊。在一些實施例中,其他導電線可接合至積體電路之一或多個IC晶粒及初級層之焊墊。
本發明之優勢包括但不限於改良之可製造性及器件良率。特定言之,本發明之態樣允許具有必要間距之更多焊墊安置於基板上,其中一組焊墊安置於初級層上且另一組焊墊安置於內層上。此外,兩組焊墊之跡線位於不同層上且藉由鄰近層之介電材料分離,此減少寄生效應。
圖1A繪示根據本發明之一些實施例的具有導線接合至多層基板之初級層及內層的積體電路之剖面圖。
圖1A繪示積體電路器件100。積體電路器件100包括安置於多層基板102(在本文中亦稱作「基板」)上之積體電路132。積體電路132包覆於諸如陶瓷或塑膠材料(例如環氧樹脂模製化合物)之封裝材料中,如封裝130所繪示。
積體電路132可包括一或多個積體電路晶粒。在一些實施例中,積體電路132為堆疊的積體電路,如圖1A中所繪示。積體電路132包括積體電路晶粒104A、104B、104C、104D、104E及104F(在本文中總體上稱作「積體電路晶粒104」)。積體電路晶粒104可包括一或多種類型之積體電路。舉例而言,積體電路器件100可為可包括邏輯晶粒(例如積體電路晶粒104A)及一或多個揮發性或非揮發性記憶體晶粒之記憶體器件。舉例而言,積體電路晶粒104B至104E可為靜態隨機存取記憶體(SRAM)晶粒,且積體電路晶粒104F可為反及閘(NAND)快閃記憶體晶粒。如所繪示,諸如間隔件128A及128B之支撐件可用於晶粒堆疊中以有助於分佈懸垂晶粒之負載。支撐件可包括介電材料。在一些實施例中,積體電路晶粒104A可為直接接合至基板102之初級層102A的覆晶。在一些實施例中,積體電路晶粒104中之一或多者之間可為有助於使積體電路晶粒104彼此電絕緣的介電層(例如底部填充材料)。
在一些實施例中,積體電路晶粒104中之一或多者可具有利用積體電路晶粒104E之晶粒墊124及積體電路晶粒104C之晶粒墊126所繪示的一或多個晶粒墊。晶粒墊可位於各別積體電路晶粒104之表面(諸如頂部表面)處。晶粒墊(在本文中亦稱作「接觸墊」)可為經指定用於外部電接觸(例如以將積體電路晶粒電耦接至另一組件)之積體電路晶粒的表面區域。在一些實施例中,晶粒墊塗佈有導電材料,諸如金或金合金。
在一些實施例中,基板102包括三個或更多個層。如所繪示,基板102包括初級層102A、內層102B、內層102C及次級層102D(在本文中共同地稱作「基板102」)。在一些實施例中,基板102之各個層中之一或多者可包括使一層與鄰近層電絕緣的介電材料(例如具有玻璃纖維之環氧樹脂)。在一些實施例中,層可包括介電材料上之導電引線或跡線及該層之介電材料內的導通孔,該導通孔可將一個層之導電引線或跡線電耦接至另一層之導電引線或跡線。在一些實施例中,一或多個層(或其表面)可大致平行於彼此而定向。大致平行可指與絕對平行成+/-10度或更大以考慮製造公差。
在一些實施例中,初級層102A包括為基板102之外表面的表面106。初級層102A可包括延伸穿過初級層102A之表面106至基板102之內層的一或多個開放區域,諸如開放區域116A及開放區域116B(在本文中總體上稱作「開放區域116」)。每一開放區域116可暴露各別內層之表面的一部分。各別內層之非暴露表面可接合至上述層,諸如初級層102A。在所繪示之實例中,內層102B之表面110經由初級層102A之開放區域116暴露。
基板102之次級層102D包括為基板102之外表面的表面
108。在一些實施例中,次級層102D包括一或多個電觸點,諸如電觸點112A及電觸點112B。出於繪示而非限制之目的,積體電路器件100之電觸點經繪示為球狀柵格陣列。在一些實施例中,其他類型之電觸點可實施於次級層102D上。在一些實施例中,可使用導通孔將電觸點組態為電耦接至上述層中之一或多者,且將信號耦接至電觸點及積體電路晶粒104且自該等電觸點及該積體電路晶粒104耦接信號。
在一些實施例中,基板102含有一或多個內層。儘管繪示兩個內層(內層102B及內層102C),但在一些實施例中,可根據本發明之態樣實施任何數目的內層。內層102B及102C位於初級層102A與次級層102D之間。內層102B包括經由初級層102A之各別一或多個開放區域暴露之表面的一或多個部分(下文進一步描述)。
在一些實施例中,經由初級層102A中之開放區域暴露之內層之表面的一部分可包括安置於內層之表面的暴露部分上之一或多個焊墊。舉例而言,焊墊118A安置於經由開放區域116A暴露之內層102B之表面110(例如表面之部分)上。焊墊118B安置於經由開放區域116B暴露之內層102B之表面的部分上。焊墊可為經指定用於外部電接觸(例如以將基板電耦接至另一組件,諸如積體電路晶粒)之基板的表面區域,諸如導線接合之導電線。在一些實施例中,初級層102A可包括一或多個焊墊,諸如焊墊114A及焊墊114B。在一些實施例中,諸如鎳金合金之焊接材料安置於焊墊上方。舉例而言,焊墊可塗佈有便於導線接合操作之導電焊接材料(下文進一步描述)。焊接材料用以將焊墊與導電線之端部接合。
在一些實施例中,積體電路132之一或多個積體電路晶粒104經導線接合至基板102。導線接合使用導電線(諸如導電線120及導電
線122)將各別積體電路晶粒104電耦接至基板102。在一些實施例中,導電線具有兩個端。在一些實施例中,導電線之第一端接合至晶粒墊,且導電線之第二端接合至安置於初級層102A之表面106上的焊墊上。舉例而言,導電線122之一端接合至積體電路晶粒104C之晶粒墊126,且導電線122之相對端接合至初級層102A之表面106處的焊墊114A。在一些實施例中,導電線之第一端接合至晶粒墊,且導電線之第二端接合至安置於內層(諸如內層102B)之表面110上的焊墊。舉例而言,導電線120之一端接合至積體電路晶粒104E之晶粒墊124,且導電線120之相對端接合至內層102B之表面110上的焊墊118A。
在一些實施例中,次級層102D之電觸點之子集(例如112B)經組態以(例如使用穿過基板102的通孔)耦接至安置於初級層102A之表面106(例如外表面)上的焊墊(例如114A及114B)。可注意,次級層102D上之電觸點可耦接至一或多個焊墊(例如表面106或108或其組合上)。在一些實施例中,次級層102D之電觸點之另一子集(例如112A)經組態以耦接至安置於經由初級層102A中的開放區域暴露之內層之表面(例如外表面)之部分上的焊墊(例如118A及118B)。舉例而言,內層102B之表面110上之焊墊118耦接(例如電耦接)至電觸點112A。
儘管經繪示使內層102B之表面之一或多個部分經由處理邏輯之開放區域暴露,但在一些實施例中,基板102之任一內層可具有表面的暴露部分。舉例而言,內層102C可使其表面之一部分經由初級層102A之開放區域及內層102B中的另一對應開放區域暴露。內層102B之對應開放區域可具有與初級層102A之開放區域(部分或完全)重疊的開放區域。
在一些實施例中,導電層(例如銅薄片)安置於內層上方以
提供對電磁(EM)干擾之屏蔽。舉例而言,導電屏蔽層可耦接至地面電位以屏蔽鄰近層免於EM干擾。返回至其中內層102B具有暴露內層102C之表面之一部分的對應開放區域的實例,導電屏蔽層可安置於內層102C與內層102B之間以減少內層102B與內層102C之間的EM干擾。可注意,導電屏蔽層可經圖案化以使得導電屏蔽層允許通孔或開放區域穿過。
圖1B繪示根據本發明之一些實施例的具有導線接合至多層基板之初級層及內層的積體電路之俯視圖。除非另外描述,否則將認為圖1A之組件為圖1B之積體電路器件100的部分。
自積體電路器件100之俯視圖可見積體電路晶粒104F及積體電路晶粒104E,而積體電路器件100之另一積體電路晶粒104自視圖看被遮擋。展示開放區域116A及開放區域116A,各自分別具有多個焊墊118A及焊墊118B。在一些實施例中,開放區域由初級層包圍(例如未延伸至初級層102A之邊緣)。在其他實施例中,開放區域之位置、大小及形狀可不同於所繪示之位置、大小及形狀。舉例而言,在一些實施例中,可切換開放區域116A及鄰近焊墊114A之方位。在其他實施例中,開放區域之一或多側可延伸至初級層102A之各別側。
本發明之態樣允許佈置焊墊,使得與其他系統相比,焊墊之間的間距相對緊密(例如閉合)。如圖1B中所繪示,至少由於焊墊之列在基板102之不同層上製造而能夠使由焊墊118A繪示之焊墊列及由焊墊114A繪示之焊墊列緊密地傾斜。舉例而言,可在內層上製造與由焊墊118A繪示之焊墊列相關聯之跡線(圖中未示,但可大致繪示為位於導電線正下方之層的表面上),此可將該等跡線與上述由焊墊114A繪示之焊墊列電隔離(例如解耦)。舉例而言,若由焊墊118A繪示之焊墊列及由焊墊
114A繪示之焊墊列製造於同一層上,則各別焊墊之間的間距將增大以補償與由焊墊118A及焊墊114A繪示之焊墊列相關聯的跡線之間的電耦接。另外,若焊墊118A及114A之間的間距由於多列焊墊製造於同一層上或製造為位於單一列中而增大,則自晶粒至焊墊之導線接合將至少由於將以相對於晶粒墊之許多不同角度執行導線接合而具有挑戰性。
在一些實施例中,焊墊118A配置於第一列焊墊中。焊墊114A配置於第二列焊墊中。第一列焊墊中之焊墊118A之對準偏移於第二列焊墊中之對應焊墊114A。舉例而言,自焊墊118A中之焊墊的中心線繪製之線將位於焊墊114A中之兩個對應焊墊(例如大致由導電線繪示)之間。在一些實施例中,焊墊118A中之焊墊之寬度等於或大於焊墊114A中之第一焊墊之一側與焊墊114A中之第二鄰近焊墊的直接鄰近側之間的距離。舉例而言,若焊墊118A及114A以相同間隔在單一列中對準,則焊墊之側邊將接觸抑或重疊。
如所繪示,許多導電線自積體電路晶粒104導線接合至初級層102A或內層102B之各別焊墊。導線接合操作可包括焊接製程(例如固相焊接製程),其中使兩種導電(例如金屬)材料(例如導電線之端部及晶粒墊或焊墊)接觸。回應於使兩種材料接觸,發生原子之電子共用或相互擴散且產生導線接合。在繪示性導線接合操作實例中,毛細管工具可固持導電線(例如閉合位置以自線軸抽拉線)。電弧可電弧切割導電線之端部且在導電線之端部處形成自由空氣球(例如導電材料球)。毛細管工具可將自由空氣球按壓至晶粒墊(例如積體電路晶粒104E之晶粒墊124)上,且使用機械能、熱能或超音波能中之一或多者以在晶粒墊與導電線之端部上形成球接合。毛細管工具之線夾打開且當毛細管工具移動至相關聯之焊墊(例如
內層102B之表面110上之焊墊118A)時,導電線饋穿過毛細管工具。毛細管工具接觸各別焊墊且使用機械能、熱能或超音波能中之一或多者以在焊墊與導電線之相對端上形成球接合。可針對任何晶粒墊及焊墊對重複導線接合操作。
在一些實施例中,可使用一或多個基板製造操作來製造具有一或多個開放區域之基板,諸如基板102。將出於繪示而非限制之目的來描述4層基板之製造操作。製造操作可用以製造具有任何數目層之基板。
在第一基板製造操作中,可圖案化內層。層合物之面板(例如核心)可包括具有包夾於兩個導電薄片(例如銅薄片)之間的玻璃纖維之環氧樹脂。核心可製造為基板之兩個內層。光阻材料經施加至核心之兩側(例如銅薄片上),且光罩以適合圖案或佈局施加至每一側。在一些實施例中,內層之表面之一或多個部分經圖案化以具有焊墊(例如經施加之光罩佈局可在其上具有焊墊圖案)。光阻材料經光處理(例如紫外光處理)以固化(例如硬化)經施加光罩之圖案中的光阻材料。移除未硬化之光阻。在一些實施例中,經硬化之光阻保留於待保持之銅上。在其他實施例中可發生相反情況。可注意,可視實施方案而使用正型或負型光阻。
在第二基板操作中,蝕刻內層。核心材料可為自核心蝕刻掉之非所要的銅。舉例而言,可將具有經硬化光阻之核心置於鹼性溶液中以蝕刻掉非所要銅,且在經硬化光阻下保留銅。在移除非所要銅之後,移除經硬化光阻,留下經圖案化核心(例如內層上之焊墊)。
在第三基板操作中,分別地在經圖案化核心上方及下方形成初級層及次級層。舉例而言,薄銅箔經敷設且預浸漬材料之薄片(在本
文中稱作「預浸材」)定位於銅箔上方。預浸材可為利用未經固化環氧樹脂預浸漬之纖維薄片(例如玻璃布)。底部銅箔及預浸材可形成次級層(或初級層,其視經圖案化核心之定向而定)。經圖案化核心可置放於預浸材之最上部薄片上。預浸材之更多薄片可堆疊於經圖案化核心上且銅箔之另一薄片置放於預浸材之最頂部薄片上。後者定位之預浸材及銅箔可變為初級層(或次級層,其視經圖案化核心之定向而定)。材料之堆疊可使用經加熱之壓板熱壓以使得材料接合在一起。熱量可熔融預浸材且施加之壓力可幫助將材料接合在一起以形成基板。
在其中開放區域產生於初級層中之實施例中,可在待形成開放區域之方位中移除最頂部的預浸材。舉例而言,可使用雷射源(或鋸切)以切割預浸材而移除預浸材。在一些實施例中,亦可切割最頂部銅薄片以移除待形成開放區域之方位中的銅。在切割預浸材及銅以包括開放區域之後,預浸材及銅薄片定位於核心上方且經熱壓,如上文所描述。
在第四基板操作中,可在基板中形成通孔。在一些實施例中,基板可經打孔以具有用於待形成於基板中之任意通孔的孔。諸如無電銅沈積之銅沈積技術可用以在任何孔之壁上化學沈積銅以產生經鍍覆穿孔。
在第四基板操作中,可圖案化外層,諸如初級層及次級層。在一些實施例中,光阻材料經施加至基板之兩個外層且光罩經施加至具有適合圖案或佈局之每一側。光阻經光處理以在經施加光罩之圖案中固化。移除未硬化之光阻。在一些實施例中,藉由移除光阻且隨後進行鍍覆來暴露待保留外銅層之部分(如下文所描述)。在一些實施例中,光阻材料亦可施加至經由開放區域暴露之內層之表面的部分。即使焊墊已經圖案
化,亦可圖案化光罩以使得在移除未經硬化光阻之情況下暴露內層之焊墊。在一些實施例中,位於開放區域中但未在焊墊上方之光阻可經硬化且在移除未經硬化光阻之後保留。
在第五基板操作中,可鍍覆及蝕刻外層。在一些實施例中,可使用電鍍操作藉由銅來鍍覆基板。在電鍍操作中,銅沈積於孔(例如通孔)之壁上以及光阻已經移除之區域(例如跡線)上。在沈積銅之後,錫層可沈積於新沈積之銅上。錫層可作為抗蝕刻層。移除剩餘光阻以暴露底層銅。可使用例如鹼性化學移除來移除底層銅。在移除底層銅之後,可移除鍍錫以暴露所要銅圖案。
在第六基板操作中,可藉由阻焊來覆蓋基板。基板可經清潔及磨毛,且塗佈有環氧樹脂阻焊油墨(例如綠色塗層)。基板可使用光罩再次成像。環氧樹脂阻焊油墨可充當光阻。圖案可圖案化待暴露於基板之外表面上的銅,諸如內層之焊墊。未經硬化光阻經剝落。可使用加熱製程固化剩餘環氧樹脂阻焊油墨。
在第七基板操作中,可鍍覆外層(及內層之表面的部分)上之經暴露之銅。化學製程可用以鍍覆經暴露之銅。舉例而言,無電鎳金(例如首先鎳,接著金)製程可鍍覆焊墊,諸如內層及初級層上之焊墊。
可在下文描述圖1A及圖1B之元件以幫助繪示方法200。可注意,方法200可以任何次序執行且可包括相同、不同、更多或更少操作。可進一步注意,方法200可藉由半導體製造設備或製造工具或半導體封裝工具或半導體裝配工具或導線接合工具(下文稱作製造設備)中之一或多個執行。
圖2繪示根據本發明之一些實施例的使用具有暴露基板之
內層之表面之一部分的開放區域的多層基板的流程圖。
在方法200之操作205處,製造設備提供基板。在一些實施例中,基板包括初級層、次級層及一或多個內層。一或多個內層位於初級層與次級層之間。初級層包括暴露內層之表面之一部分的開放區域。在一些實施例中,經暴露之內層之表面的部分包括一或多個焊墊。
在操作210處,製造設備在基板之初級層上方安置第一積體電路晶粒。舉例而言,第一積體電路晶粒可為接合至基板之初級層的覆晶。
在操作215處,製造設備在第一積體電路晶粒上方安置第二積體電路晶粒。在一些實施例中,第二積體電路晶粒包括晶粒墊。
在操作220處,製造設備執行將導電線之第一端接合至第二積體電路之晶粒墊且將導電線之第二端接合至基板之內層之焊墊的導線接合操作。在一些實施例中,焊接材料安置於基板之內層的焊墊上。焊接材料回應於導線接合操作之執行而將導電線之第二端接合至焊墊。
在一些實施例中,導電線為第一導電線。製造設備執行將導電線之第一端接合至第二積體電路之晶粒墊且將導電線之第二端接合至基板的初級層上之第二複數個焊墊的導線接合操作。在一些實施例中,製造設備在第二積體電路晶粒上方安置第三積體電路晶粒。第三積體電路晶粒包括晶粒墊。在一些實施例中,製造設備執行將第二導電線之第一端接合至第三積體電路之晶粒墊且將第二導電線之第二端接合至基板之內層上之焊墊的導線接合操作。
圖3繪示根據本發明之一些實施例的包括記憶體子系統310之實例計算系統300。記憶體子系統310可包括媒體,諸如一或多個揮發
性記憶體器件(例如記憶體器件340)、一或多個非揮發性記憶體器件(例如記憶體器件330)或此類器件之組合。
記憶體子系統310可為儲存器件、記憶體模組,或儲存器件與記憶體模組之混合。儲存器件之實例包括固態驅動器(SSD)、快閃驅動器、通用串列匯流排(USB)快閃驅動器、嵌入式多媒體控制器(eMMC)驅動器、通用快閃儲存(UFS)驅動器、安全數位(SD)卡及硬碟驅動器(HDD)。記憶體模組之實例包括雙行記憶體模組(DIMM)、小型DIMM(SO-DIMM)及各種類型的非揮發性雙行記憶體模組(NVDIMM)。
計算系統300可為計算器件,諸如桌上型電腦、膝上型電腦、網路伺服器、行動器件、交通工具(例如飛機、無人機、火車、汽車或其他運輸工具)、物聯網(IoT)賦能器件、嵌入式電腦(例如交通工具、工業設備或網路連接商業器件中所包括的嵌入式電腦),或包括記憶體及處理器件之此類計算器件。
計算系統300可包括耦接至一或多個記憶體子系統310之主機系統320。在一些實施例中,主機系統320耦接至不同類型之記憶體子系統310。圖3繪示耦接至一個記憶體子系統310的主機系統320之一個實例。如本文中所使用,「耦接至」或「與......耦接」通常係指組件之間的連接,其可為間接通信連接或直接通信連接(例如無介入組件),無論為有線的抑或無線的,包括諸如電連接、光學連接、磁性連接及其類似者之連接。
主機系統320可包括處理器晶片組及由處理器晶片組執行之軟體堆疊。處理器晶片組可包括一或多個核心、一或多個快取、記憶體控制器(例如NVDIMM控制器)及儲存協定控制器(例如PCIe控制器、
SATA控制器)。舉例而言,主機系統320使用記憶體子系統310以將資料寫入至記憶體子系統310及自記憶體子系統310讀取資料。
主機系統320可經由實體主機介面耦接至記憶體子系統310。實體主機介面之實例包括(但不限於)串列進階技術附接(SATA)介面、快捷周邊組件互連(PCIe)介面、通用串列匯流排(USB)介面、光纖通道、串列附接SCSI(SAS)、小型電腦系統介面(SCSI)、雙資料速率(DDR)記憶體匯流排、雙行記憶體模組(DIMM)介面(例如支援雙資料速率(DDR)之DIMM插口介面)、開放式NAND快閃介面(ONFI)、雙資料速率(DDR)、低功率雙資料速率(LPDDR)或任何其他介面。實體主機介面可用以在主機系統320與記憶體子系統310之間傳輸資料。當記憶體子系統310藉由PCIe介面與主機系統320耦接時,主機系統320可進一步利用快捷NVM(NVMe)介面以存取組件(例如記憶體器件330)。實體主機介面可提供用於在記憶體子系統310與主機系統320之間傳遞控制、位址、資料及其他信號之介面。圖3繪示記憶體子系統310作為實例。大體而言,主機系統320可經由同一通信連接、多個單獨通信連接及/或通信連接之組合存取多個記憶體子系統。
記憶體器件330或340可包括不同類型之非揮發性記憶體器件及/或揮發性記憶體器件之任何組合。揮發性記憶體器件(例如記憶體器件340)可為(但不限於)隨機存取記憶體(RAM),諸如動態隨機存取記憶體(DRAM)及同步動態隨機存取記憶體(SDRAM)。
非揮發性記憶體器件(例如記憶體器件330)之一些實例包括反及(NAND)型快閃記憶體及就地寫入記憶體,諸如三維交叉點(「3D交叉點」)記憶體器件,其為非揮發性記憶體單元之交叉點陣列。非揮發性
記憶體之交叉點陣列可結合可堆疊交叉柵格資料存取陣列基於體電阻之改變而執行位元儲存。另外,與許多基於快閃之記憶體相比,交叉點非揮發性記憶體可進行就地寫入操作,其中可在先前未抹除非揮發性記憶體單元之情況下對該非揮發性記憶體單元進行程式化。NAND型快閃記憶體包括例如二維NAND(2D NAND)及三維NAND(3D NAND)。
記憶體器件330中之每一者可包括記憶體單元之一或多個陣列。一種類型之記憶體單元(例如單一層級單元(SLC))可每單元儲存一個位元。其他類型之記憶體單元(諸如多層級單元(MLC)、三層級單元(TLC)及四層級單元(QLC))可每單元儲存多個位元。在一些實施例中,記憶體器件330中之每一者可包括記憶體單元(諸如SLC、MLC、TLC、QLC或此類記憶體單元之任何組合)的一或多個陣列。在一些實施例中,特定記憶體器件可包括記憶體單元之SLC部分及MLC部分、TLC部分或QLC部分。記憶體器件330之記憶體單元可經分組為可指用以儲存資料的記憶體器件之邏輯單元的頁。在一些類型之記憶體(例如,NAND)的情況下,頁可經分組以形成區塊。
儘管描述諸如NAND型快閃記憶體(例如2D NAND、3D NAND)及非揮發性記憶體單元之3D交叉點陣列之非揮發性記憶體組件,但記憶體器件330可係基於任何其他類型的非揮發性記憶體,諸如唯讀記憶體(ROM)、相變記憶體(PCM)、自選擇記憶體、其他硫族化物類記憶體、鐵電電晶體隨機存取記憶體(FeTRAM)、鐵電隨機存取記憶體(FeRAM)、磁性隨機存取記憶體(MRAM)、自旋轉移力矩(STT)-MRAM、導電橋接RAM(CBRAM)、電阻式隨機存取記憶體RRAM、氧化物類RRAM(OxRAM)、反或(NOR)快閃記憶體及電可抹除可程式化唯
讀記憶體(EEPROM)。
記憶體子系統控制器318(或為了簡單起見,控制器318)可與記憶體器件330通信以執行操作,諸如在記憶體器件330處讀取資料、寫入資料或抹除資料及其他此類操作。記憶體子系統控制器318可包括硬體,諸如一或多個積體電路及/或離散組件、緩衝器記憶體或其組合。硬體可包括具有執行本文中所描述之操作的專用(亦即,硬寫碼)邏輯之數位電路。記憶體子系統控制器318可為微控制器、特殊用途邏輯電路(例如場可程式化閘陣列(FPGA)、特殊應用積體電路(ASIC)等),或其它合適的處理器。
記憶體子系統控制器318可包括經組態以執行儲存於局部記憶體319中之指令的處理器件317(處理器)。在所繪示之實例中,記憶體子系統控制器318之局部記憶體319包括經組態以儲存用於執行各種過程、操作、邏輯流程及常式的指令之嵌入式記憶體,該等過程、操作、邏輯流程及常式控制記憶體子系統310之操作,包括處置記憶體子系統310與主機系統320之間的通信。
在一些實施例中,局部記憶體319可包括儲存記憶體指標、所提取資料等之記憶體暫存器。局部記憶體319亦可包括用於儲存微碼之唯讀記憶體(ROM)。儘管已將圖3中之實例記憶體子系統310繪示為包括記憶體子系統控制器318,但在本發明之另一實施例中,記憶體子系統310不包括記憶體子系統控制器318,且可改為依賴於外部控制(例如由外部主機或由與記憶體子系統分開之處理器或控制器提供)。
大體而言,記憶體子系統控制器318可自主機系統320接收命令或操作,且可將命令或操作轉換成指令或適當命令以實現對記憶體器
件330及/或記憶體器件340的所要存取。記憶體子系統控制器318可負責其他操作,諸如耗損調平操作、廢料收集操作、錯誤偵測及錯誤校正碼(ECC)操作、加密操作、快取操作,及與記憶體器件330相關聯之邏輯位址(例如邏輯區塊位址(LBA)、命名空間)與實體位址(例如實體區塊位址)之間的位址轉譯。記憶體子系統控制器318可進一步包括主機介面電路以經由實體主機介面與主機系統320通信。主機介面電路可將自主機系統接收到的命令轉換成用以存取記憶體器件330及/或記憶體器件340之命令指令,以及將與記憶體器件330及/或記憶體器件340相關聯之回應轉換成用於主機系統320之資訊。
記憶體子系統310亦可包括未繪示之額外電路或組件。在一些實施例中,記憶體子系統310可包括快取或緩衝器(例如DRAM)及位址電路(例如列解碼器及行解碼器),其可自記憶體子系統控制器318接收位址且對該位址進行解碼以存取記憶體器件330。
在一些實施例中,記憶體器件330包括與記憶體子系統控制器318協同操作以對記憶體器件330之一或多個記憶體單元執行操作的局部媒體控制器335。外部控制器(例如記憶體子系統控制器318)可在外部管理記憶體器件330(例如對記憶體器件330執行媒體管理操作)。在一些實施例中,記憶體器件330為經管理記憶體器件,其為與局部控制器(例如局部控制器335)組合以用於相同記憶體器件封裝內之媒體管理之原始記憶體器件。經管理記憶體器件之實例為經管理NAND(MNAND)器件。
在一些實施例中,記憶體器件330可為非揮發性記憶體器件。在一些實施例中,非揮發性記憶體器件為一或多個晶粒之實體封裝(例如在其自身之具有外部接腳或電觸點之離散實體封裝中之記憶體器
件)。晶粒可指諸如半導電材料之材料塊,該材料塊上製造功能電子電路。諸如記憶體器件330之記憶體器件可包括一或多個晶粒。各晶粒可由一或多個平面組成。對於一些類型之非揮發性記憶體器件(例如,反及(NAND)器件),每一平面由實體區塊集合組成。一或多個區塊可經分組在一起以形成記憶體組件之平面,以便允許在每一平面(例如多平面寫入)上進行並行操作(例如平行度)。各區塊由頁集合組成。每一頁由儲存資料位元之記憶體單元集合組成。在一些實施例中,記憶體單元可包括用於儲存對應於自主機系統接收到的資料之二進制資料之一或多個位元之一或多個記憶體頁(在本文中亦稱作「邏輯頁」或「頁」,例如SLC、MLC、TLC、QLC頁)。對於諸如NAND器件之一些記憶體器件,區塊係可抹除之最小區域,且區塊內之頁無法個別地抹除。對於諸如NAND器件之一些記憶體器件,頁係可寫入(例如經程式化)之最小區域。在一些實施例中,記憶體子系統310包括執行如本文中所描述之操作的記憶體子系統控制器318。
在一些實施例中,記憶體操作可包括(但不限於)程式化操作(例如寫入操作)、讀取操作或抹除操作。在一些實施例中,程式化操作可包括多個子操作,諸如程式化子操作、讀取子操作及驗證子操作。程式化子操作將資料程式化至記憶體單元。待程式化之資料亦可儲存於記憶體器件330之一或多個暫存器中。讀取操作讀取經程式化至記憶體單元之資料。驗證操作比較來自讀取操作之讀取資料是否匹配儲存於暫存器中的原始資料。
在一些實施例中,計算系統300之任何組件可實施如本文中所描述之器件,諸如積體電路器件100。舉例而言,可根據本發明之態樣實施記憶體器件330或記憶體器件340(或其組合)。
圖4為根據本發明之實施例製造的計算器件。計算器件400可包括數個組件。在一個實施例中,組件附接至一或多個電路板,諸如主機板。在一替代實施例中,此等組件中之一些或全部製造於單一晶片上系統(SoC)晶粒上,諸如用於行動器件的SoC上。在實施例中,計算器件400中之組件包括(但不限於)積體電路器件100及至少一個通信邏輯單元408。在一些實施例中,通信邏輯單元408製造於單獨積體電路晶片中,該積體電路晶片可接合至與積體電路器件100共用或電耦接至積體電路器件100的基板或主機板。可注意,在一些實施例中,積體電路器件100可包括任何數目或類型之積體電路晶粒。
計算器件400可包括可或可不實體地且電性地耦接至主機板或製造於SoC晶粒內之其他組件。此等其他組件包括(但不限於)揮發性記憶體410(例如DRAM)、非揮發性記憶體412(例如ROM或快閃記憶體)、圖形處理單元414(GPU)、數位信號處理器416、密碼處理器442(例如在硬體內執行密碼編譯演算法之專用處理器)、晶片組420、至少一個天線422(在一些實施例中可使用兩個或更多個天線)、顯示器或觸控式螢幕顯示器424、觸控式螢幕控制器426、電池428或其他電源、功率放大器(未展示)、電壓調整器(未展示)、全球定位系統(GPS)器件427、羅盤(未展示)、運動共處理器或感測器432(可包括加速計、陀螺儀及羅盤)、麥克風(未展示)、揚聲器434、攝影機436、使用者輸入器件438(諸如鍵盤、滑鼠、觸控筆及觸控板)及大容量儲存器件440(諸如硬磁碟驅動機、光碟(CD)、數位化通用光碟(DVD)等)。計算器件400可併入本文中尚未描述之其他傳輸、電信或無線電功能性。在一些實施例中,計算器件400包括用以藉由在空氣或空間中調變及輻射電磁波而在一定距離內通信的無線
電。在其他實施例中,計算器件400包括用以藉由在空氣或空間中調變及輻射電磁波而在一定距離內通信之傳輸器及接收器(或收發器)。
通信邏輯單元408實現無線通信以用於將資料傳送至計算器件400及自計算器件400傳送資料。術語「無線」及其衍生詞可用以描述可經由非固體媒體經由使用經調變電磁輻射來傳達資料之電路、器件、系統、方法、技術、通信通道等。該術語並不暗示相關聯器件不含有任何導線,但在一些實施例中該等器件可能不含有導線。通信邏輯單元408可實施多種無線標準或協定中之任一者,包括(但不限於)Wi-Fi(IEEE 802.11族)、WiMAX(IEEE 802.16族)、IEEE 802.20、長期演進(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、紅外線(IR)、近場通信(NFC)、藍芽(Bluetooth)、其衍生詞以及稱為3G、4G、5G及超5G之任何其他無線協定。計算器件400可包括多個通信邏輯單元408。舉例而言,第一通信邏輯單元408可專用於較短距離無線通信(諸如Wi-Fi、NFC及藍芽),且第二通信邏輯單元408可專用於較長距離無線通信(諸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO及其他)。
處理器404(在本文中亦指「處理器件」)可指處理來自暫存器及/或記憶體之電子資料以將彼電子資料變換成可儲存於暫存器及/或記憶體中之其他電子資料的任一器件或器件之部分。處理器404表示一或多個通用處理器件,諸如微處理器、中央處理單元或其類似者。更特定言之,處理器404可為複雜指令集計算(CISC)微處理器、精簡指令集計算(RISC)微處理器、超長指令字(VLIW)微處理器或實施其他指令集之處理器或實施指令集之組合的處理器。處理器404亦可為一或多個專用處理器
件,諸如特殊應用積體電路(ASIC)、場可程式化閘陣列(FPGA)、數位信號處理器(DSP)、網路處理器或其類似者。
在各種實施例中,計算器件400可為膝上型電腦、迷你筆記型電腦、筆記型電腦、超級本電腦、智慧型電話、非智慧型電話、平板電腦、平板電腦/膝上型電腦混成體、個人數位助理(PDA)、超級行動PC、行動電話、桌上型電腦、伺服器、印表機、掃描儀、監視器、機上盒、娛樂控制單元、數位攝影機、攜帶型音樂播放器或數位視訊錄製器。在其他實施例中,計算器件400可為處理資料之任何其他電子器件。
已根據對電腦記憶體內之資料位元進行之操作的演算法及符號表示來呈現前述詳細描述之一些部分。此等演算法描述及表示為熟習資料處理技術者用以將其工作實質有效地傳達給其他熟習此項技術者之方法。此處且大體上將演算法構想為產生所需結果之操作的自一致序列。該等操作為需要實體量之實體操縱的操作。通常但未必,此等量採用能夠儲存、組合、比較以及以其他方式操控之電信號或磁信號的形式。主要出於常用之原因,已證實有時將此等信號稱作位元、值、元素、符號、字元、項、數字或其類似者係便利的。
然而,應牢記,所有此等術語及類似術語與適當實體量相關聯,且僅為應用於此等量之便利標記。本發明可涉及操控表示為電腦系統之暫存器及記憶體內的實體(電子)量的資料並將其變換成類似地表示為電腦系統記憶體或暫存器或其他此類資訊儲存系統內的實體量之其他資料的電腦系統或類似電子計算器件之動作及程序。
本發明亦係關於一種用於執行本文中之操作的裝置。此裝置可經特別建構以用於預期目的,或其可包括由儲存於電腦中之電腦程式
選擇性地啟動或重組態之通用電腦。此類電腦程式可儲存於電腦可讀儲存媒體中,該電腦可讀儲存媒體諸如(但不限於)各自耦接至電腦系統匯流排的包括軟碟、光碟、CD-ROM及磁光碟之任何類型之磁碟、唯讀記憶體(ROM)、隨機存取記憶體(RAM)、EPROM、EEPROM、磁性或光學卡或適合於儲存電子指令之任何類型之媒體。
本文中所呈現之演算法或操作並非固有地與任何特定電腦或其他裝置相關。各種通用系統可根據本文中之教示與程式一起使用,或其可證明建構更專用之裝置以執行方法係便利的。用於各種此等系統之結構將呈現為如以下描述所闡述的。另外,並未參考任何特定程式設計語言來描述本發明。應瞭解,各種程式設計語言可用以實施如本文中所描述的本發明之教示。
本發明可提供為電腦程式產品或軟體,其可包括其上儲存有指令的機器可讀媒體,該等指令可用以程式化電腦系統(或其他電子器件)以執行根據本發明之程序。機器可讀媒體包括用於儲存呈可由機器(例如,電腦)讀取之形式之資訊的任何機制。在一些實施例中,機器可讀(例如,電腦可讀)媒體包括機器(例如,電腦)可讀儲存媒體,諸如唯讀記憶體(「ROM」)、隨機存取記憶體(「RAM」)、磁碟儲存媒體、光學儲存媒體、快閃記憶體組件等。
詞「實例」或「例示性」在本文中用以意謂充當實例、例子或繪示。不必將本文中描述為「實例」或「例示性」之任何態樣或設計理解為比其他態樣或設計較佳或有利。實際上,使用詞「實例」或「例示性」意欲以具體方式呈現概念。如本申請案中所使用,術語「或」欲意謂包括性的「或」而非排他性的「或」。亦即,除非另外規定,否則或根據
上下文顯而易見,「X包括A或B」欲意謂天然包括性置換中之任一者。亦即,若X包括A;X包括B;或X包括A及B二者,則「X包括A或B」在前述情況中之任一者下滿足。另外,除非另外規定,否則或根據上下文顯而易見地針對單數形式,否則如本申請案及所附申請專利範圍中所使用,冠詞「一個(a/an)」通常解釋為意謂「一或多個」。此外,全篇使用術語「一實施例(an embodiment)」或「一個實施例(one embodiment)」或「一實施方案(an implementation)」或「一個實施方案(one implementation)」或其類似者可或可不意謂相同實施例或實施方案。可在特定實施例或實施方案中組合本文中所描述之一或多個實施例或實施方案。如本文中所使用之術語「第一」、「第二」、「第三」、「第四」等意謂區分不同元件之標記且可不必具有根據其數值番號的序數含義。
如本文中所用之空間相對術語,諸如「在...之上」、「在...上方」、「在...之下」、「在...之間」及「在...上」係指一個材料層或組件相對於其他層或組件之相對位置。舉例而言,安置於另一層上方或之上或之下之一個層可與另一層直接接觸或可具有一或多個介入層。此外,安置於兩個層之間的一個層可與兩個層直接接觸或可具有一或多個介入層。相比之下,「在」第二層「上」之第一層與該第二層直接接觸。類似地,除非另外明確陳述,否則安置於兩個特徵之間的一個特徵可與相鄰特徵直接接觸或可具有一或多個介入層。除非另外規定,否則空間相對術語並不意欲限制絕對定向,且意欲涵蓋除圖式中所描繪之定向外的層或組件之不同定向(例如旋轉90度、倒置、翻轉)。舉例而言,若圖式中之層為倒置,則經描述為在其他層或組件「上方」或「頂部上」之層可被認為在其他層或組件「下方」或「底部上」定向,而不偏離本發明之態樣。
在前述說明書中,本發明之實施例已參考其特定實例實施例加以描述。將顯而易見的係,可在不脫離如隨附申請專利範圍中所闡述的本發明之實施例的更廣泛精神及範疇的情況下對其進行各種修改。因此,說明書及圖式應在繪示性意義上而非限制性意義上來理解。
100:積體電路器件
102:基板
102A:初級層
102B:內層
102C:內層
102D:次級層
104A:積體電路晶粒
104B:積體電路晶粒
104C:積體電路晶粒
104D:積體電路晶粒
104E:積體電路晶粒
104F:積體電路晶粒
106:表面
108:表面
110:表面
112A:電觸點
112B:電觸點
114A:焊墊
114B:焊墊
116A:開放區域
116B:開放區域
118A:焊墊
118B:焊墊
120:導電線
122:導電線
124:晶粒墊
126:晶粒墊
128A:間隔件
128B:間隔件
130:封裝
132:積體電路
Claims (20)
- 一種積體電路裝置,其包含:一積體電路;及一基板,其耦接至該積體電路,該基板包含:一初級層,其包含為該基板之一第一外表面之一第一表面,且其中該初級層與延伸穿過該初級層的一開放區域相關聯;一次級層,其包含為該基板之一第二外表面之一第二表面,其中該次級層包含複數個電觸點;及一內層,其位於該初級層與該次級層之間,其中該內層包含大致平行於該初級層之該第一表面而定向的一第三表面,其中該內層之該第三表面之一部分經由與該初級層相關聯之該開放區域暴露,且其中該內層包含經由與該初級層相關聯之該開放區域暴露的第一複數個導線接合焊墊。
- 如請求項1之積體電路裝置,該基板進一步包含:第二複數個導線接合焊墊,其安置於該初級層之該第一表面上。
- 如請求項2之積體電路裝置,其中該複數個電觸點之一第一子集經組態以耦接至該內層之該第一複數個導線接合焊墊,且其中該次級層之該複數個電觸點之一第二子集經組態以耦接至該初級層之該第二複數個導線接合焊墊。
- 如請求項2之積體電路裝置,其進一步包含:複數個晶粒墊,其安置於該積體電路上;第一複數個導電線,其包含第一端及第二端,其中該第一複數個導電線之該等第一端接合至該複數個晶粒墊之一第一子集,且其中該第一複數個導電線之該等第二端接合至安置於經由與該初級層相關聯之該開放區域暴露的該內層之該第一複數個導線接合焊墊;及第二複數個導電線,其包含第一端及第二端,其中該第二複數個導電線之該等第一端接合至該複數個晶粒墊之一第二子集,且其中該第二複數個導電線之該等第二端接合至安置於該初級層之該第一表面上的該第二複數個導線接合焊墊。
- 如請求項3之積體電路裝置,其進一步包含:一焊接材料,其安置於該第一複數個導線接合焊墊上方,其中該焊接材料將該第一複數個導線接合焊墊接合至該第一複數個導電線。
- 如請求項1之積體電路裝置,其中該內層為一第一內層,該基板進一步包含:一第二內層,其位於該初級層與該次級層之間。
- 如請求項6之積體電路裝置,其中該第二內層位於該第一內層與該次級層之間。
- 如請求項6之積體電路裝置,其中該第二內層位於該第一內層與該初 級層之間,其中該第二內層與延伸穿過該第二內層且經定向以與該初級層相關聯之該開放區域重疊的一開放區域相關聯,且其中該第一內層經由與該第二內層相關聯之該開放區域暴露。
- 如請求項6之積體電路裝置,其中一導電層安置於該初級層與該第一內層之間,其中該導電層與經定向以與與該初級層相關聯之該開放區域重疊的一開放區域相關聯,且其中該導電層經組態以提供對電磁干擾之屏蔽。
- 如請求項2之積體電路裝置,其中該積體電路為包含複數個晶粒之一堆疊積體電路,其中該複數個晶粒中之一第一晶粒堆疊於該複數個晶粒中之一第二晶粒上方,其中該第一晶粒之一晶粒墊經接合至該第一複數個導線接合焊墊中的一導線接合焊墊,且其中該第二晶粒之一晶粒墊經接合至安置於該初級層之該第一表面上的該第二複數個導線接合焊墊中的一導線接合焊墊。
- 如請求項2之積體電路裝置,其中該第一複數個導線接合焊墊配置於一第一列導線接合焊墊中,其中該第二複數個導線接合焊墊配置於一第二列導線接合焊墊中,且其中該第一列導線接合焊墊中之焊墊的一對準偏移於該第二列導線接合焊墊中之對應焊墊。
- 一種電腦系統,其包含:一印刷電路板; 一處理器件,其耦接至該印刷電路板;及一記憶體器件,其耦接至該印刷電路板,該記憶體器件包含:一積體電路;及一基板,其耦接至該積體電路,該基板包含:一初級層,其包含為該基板之一第一外表面之一第一表面,且其中該初級層與延伸穿過該初級層的一開放區域相關聯;一次級層,其包含為該基板之一第二外表面之一第二表面,其中該次級層之該第二表面包含複數個電觸點;及一內層,其位於該初級層與該次級層之間,其中該內層包含大致平行於該初級層之該第一表面而定向的一第三表面,其中該內層之該第三表面之一部分經由與該初級層相關聯之該開放區域暴露,且其中第一複數個導線接合焊墊安置於經由與該初級層相關聯之該開放區域暴露的該內層之該第三表面的該部分上。
- 如請求項12之電腦系統,其中該記憶體器件進一步包含:第二複數個導線接合焊墊,其安置於該初級層之該第一表面上。
- 如請求項13之電腦系統,其中該複數個電觸點之一第一子集經組態以耦接至安置於該內層之該第三表面之該部分上的該第一複數個導線接合焊墊,且其中該次級層之該複數個電觸點之一第二子集經組態以耦接至安置於該初級層之該第一表面上的該第二複數個導線接合焊墊。
- 如請求項13之電腦系統,該記憶體器件進一步包含: 複數個晶粒墊,其安置於該積體電路上;第一複數個導電線,其包含第一端及第二端,其中該第一複數個導電線之該等第一端接合至該複數個晶粒墊之一第一子集,且其中該第一複數個導電線之該等第二端接合至安置於經由與該初級層相關聯之該開放區域暴露的該內層之該第三表面之該部分上的該第一複數個導線接合焊墊;及第二複數個導電線,其包含第一端及第二端,其中該第二複數個導電線之該等第一端接合至該複數個晶粒墊之一第二子集,且其中該第二複數個導電線之該等第二端接合至安置於該初級層之該第一表面上的該第二複數個導線接合焊墊。
- 如請求項12之電腦系統,其中該內層為一第一內層,該基板進一步包含:一第二內層,其位於該初級層與該次級層之間。
- 一種封裝方法,其包含:提供一基板,該基板包含一初級層、一次級層及一內層,其中該內層位於該初級層與該次級層之間,其中該初級層與暴露該內層的一開放區域及該內層之第一複數個導線接合焊墊相關聯;在該基板之該初級層上方安置一第一積體電路晶粒;及在該第一積體電路晶粒上方安置一第二積體電路晶粒。
- 如請求項16之封裝方法,其進一步包含: 執行將導電線之第一端接合至該第二積體電路之複數個晶粒墊且將該等導電線之第二端接合至該基板之該內層的該第一複數個焊墊的一導線接合操作。
- 如請求項18之封裝方法,其中一焊接材料安置於該基板之該內層的該第一複數個導線接合焊墊上,且其中該焊接材料基於該導線接合操作而將該等導電線之該等第二端接合至該第一複數個導線接合焊墊。
- 如請求項17之封裝方法,該方法進一步包含:執行將第一導電線之第一端接合至該第二積體電路之複數個晶粒墊且將該等第一導電線之第二端接合至該基板之該初級層上的第二複數個導線接合焊墊的一導線接合操作;在該第二積體電路晶粒上方安置一第三積體電路晶粒,其中該第三積體電路晶粒包含複數個晶粒墊;及執行將第二導電線之第一端接合至該第三積體電路之該複數個晶粒墊且將該第二導電線之第二端接合至該內層的該第一複數個導線接合焊墊的一導線接合操作。
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US20160172336A1 (en) * | 2009-05-08 | 2016-06-16 | Micron Technology, Inc. | Independent control of stacked electronic modules |
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Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5701233A (en) | 1995-01-23 | 1997-12-23 | Irvine Sensors Corporation | Stackable modules and multimodular assemblies |
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